Device and method for adjusting crystal orientation and equipment for cutting crystal bar

Abstract

The invention provides a device and method for adjusting crystal orientation and equipment for cutting crystal bars, and the device comprises a determining unit which determines the crystal orientation of the first crystal bar according to the rotation angle of the bonded first crystal bar around the axis of the first crystal bar relative to a reference bonding state and the geometrical relationship between the crystal orientation of a wafer cut by the first crystal bar and the contour feature of the wafer; determining a first included angle between the axis of the first crystal bar and the plurality of cutting lines in a cutting line plane, and determining a second included angle between the axis of the first crystal bar and the cutting line plane; the first rotating unit is used for enabling a second crystal bar adhered to the same position as the first crystal bar to rotate around a first rotating axis perpendicular to the plane of the cutting lines based on the first included angle, so that the axis of the second crystal bar is perpendicular to the multiple cutting lines; and the second rotating unit enables the second crystal bar to rotate around a second rotating axis which is perpendicular to the axis of the second crystal bar and parallel to the cutting line plane based on the second included angle, so that the axis of the second crystal bar is parallel to the cutting line plane.

Description

Technical Field

[0001] The present disclosure relates to the field of semiconductor wafer production, and in particular to a device and method for adjusting crystal orientation and equipment for cutting crystal rods. Background Art

[0002] In the production process of semiconductor wafers, multi-wire cutting equipment is one of the key process equipment, which is used to cut the crystal rods pulled by the CZ method. Multi-wire cutting equipment is mainly composed of cutting wires, cutting wheels, wire systems and control systems. The cutting wires are usually made of high-strength diamond wires, which are fixed on the cutting wheels and cut the crystal rods by rotating the cutting wheels. The wire system is responsible for guiding the cutting wires to ensure that they remain stable and accurate during the cutting process. The control system is responsible for controlling parameters such as cutting speed, feed speed and cutting depth to achieve precise cutting. Specifically, the process of cutting the crystal rod using multi-wire cutting equipment includes the following steps: first, fix the crystal rod on the workbench of the cutting equipment; then, start the cutting wheel so that the diamond wire contacts the crystal rod at a certain speed and angle; then, adjust the cutting parameters through the control system so that the crystal rod is cut into wafers according to the predetermined size and shape; finally, clean and inspect the cut wafers to ensure that their quality meets the requirements.

[0003] In the actual production process, the bonding and fixing of the crystal rod often result in position errors, resulting in incorrect angles and orientations of the crystal rod relative to the cutting line. This error may be caused by improper operation, insufficient equipment accuracy, or unreasonable process parameter settings. When the crystal orientation of the crystal rod cannot meet the requirements, the crystal orientation of the cut wafer will also be affected, thus affecting the subsequent semiconductor device manufacturing process.

[0004] If there is a crystal orientation deviation in the wafer, it will cause a series of problems. For example, during the epitaxial process, the crystal orientation deviation of the wafer will directly affect the haze condition of the epitaxial surface, and its quality has a decisive influence on the formation of integrated circuits. The crystal orientation of the wafer refers to the angular deviation between the lattice stacking direction in the wafer and the wafer surface. This deviation will affect the result of epitaxy and then affect the performance of the device. Crystal orientation deviation will not only lead to a decline in device performance, but may also cause device failure, thereby affecting the quality and reliability of the entire semiconductor product. In summary, the existing multi-wire cutting equipment and processes have the problem of inaccurate crystal orientation control during the cutting process of the crystal rod, which directly affects the quality of the wafer and the performance of subsequent semiconductor devices. Therefore, the development of a technology and device that can effectively control the crystal orientation deviation of the wafer is of great significance to improving the quality and reliability of semiconductor products. Summary of the invention

[0005] The present disclosure provides a device and method for adjusting crystal orientation and equipment for cutting crystal rods, which can eliminate crystal orientation deviation in wafers, ensure wafer quality and performance, and thus optimize epitaxial process.

[0006] The technical solution of the present disclosure is achieved as follows: In a first aspect, the present disclosure provides a device for adjusting a crystal orientation, the device comprising: a determining unit, the determining unit being used to determine a first angle between the longitudinal axis of the first crystal ingot and a plurality of cutting lines in a cutting line plane defined by the plurality of cutting lines, and to determine a second angle between the longitudinal axis of the first crystal ingot and the cutting line plane, according to a rotation angle of the bonded first crystal ingot about its longitudinal axis relative to a reference bonding state and a geometric relationship between a crystal orientation of a wafer cut from the first crystal ingot and a contour feature of the wafer; a first rotating unit, the first rotating unit being used to rotate a second crystal ingot bonded to the same position as the first crystal ingot around a first rotating axis perpendicular to the cutting line plane based on the first included angle, so that a longitudinal axis of the second crystal ingot is perpendicular to the plurality of cutting lines; The second rotating unit is used to rotate the second crystal rod around a second rotating axis perpendicular to the longitudinal axis of the second crystal rod and parallel to the cutting line plane based on the second angle, so that the longitudinal axis of the second crystal rod is parallel to the cutting line plane.

[0007] In some optional examples, the first rotating unit includes: Pedestal; a first member, the first member being hinged to the base so that the first member can rotate around the first rotation axis, wherein the second crystal rod is bonded to rotate together with the first member; A first driver is used for driving the first component to rotate.

[0008] In some optional examples, the second rotating unit includes: a second member, the second member being hinged to the first member so that the second member can rotate about the second rotation axis, wherein the second crystal rod is bonded to remain fixed relative to the second member; A second driver is used for driving the second member to rotate.

[0009] In some optional examples, the first driver includes: a first threaded hole formed in the base; a first screw rod matched with the first threaded hole, The first screw is screwed to move toward the first member to drive the first member.

[0010] In some optional examples, the second driver includes: a second threaded hole formed in the first member; a second screw rod matched with the second threaded hole; The second screw is screwed to move toward the second member to drive the second member.

[0011] In some optional examples, the device further includes a bonding plate for bonding the second crystal rod, wherein the bonding plate is fixed to the second member.

[0012] In some optional examples, the first member is further hinged on the base so that the first member can move in the extending direction of the first rotation axis.

[0013] In some optional examples, the second member is further hinged on the first member so that the second member can move in the extension direction of the second rotation axis.

[0014] In a second aspect, the present disclosure provides a device for cutting a crystal rod, the device comprising the apparatus for adjusting the crystal orientation according to the first aspect.

[0015] In a third aspect, the present disclosure provides a method for adjusting a crystal orientation, the method comprising: Determine a first angle between the longitudinal axis of the first crystal ingot and a plurality of cutting lines in a cutting line plane defined by the plurality of cutting lines, and determine a second angle between the longitudinal axis of the first crystal ingot and the cutting line plane, according to a rotation angle of the bonded first crystal ingot about its longitudinal axis relative to a reference bonding state and a geometric relationship between a crystal orientation of a wafer cut from the first crystal ingot and a contour feature of the wafer; Based on the first angle, a second crystal ingot at the same position as the first crystal ingot is rotated around a first rotation axis perpendicular to the cutting line plane, so that a longitudinal axis of the second crystal ingot is perpendicular to the plurality of cutting lines; Based on the second angle, the second crystal ingot is rotated around a second rotation axis that is perpendicular to the longitudinal axis of the second crystal ingot and parallel to the cutting line plane, so that the longitudinal axis of the second crystal ingot is parallel to the cutting line plane.

[0016] The present disclosure provides a device and method for adjusting the crystal orientation and an apparatus for cutting a crystal rod. The device can accurately control the position and direction of the second crystal rod relative to the cutting line. The device calculates the first angle and the second angle through a determination unit, and then uses a rotation unit to adjust them to ensure that the crystal orientation is accurate when the wafer is cut. This eliminates the crystal orientation deviation in the wafer, improves the quality and performance of the wafer, optimizes the epitaxial process, ensures the quality of the epitaxial surface, and has a positive impact on the formation of integrated circuits. Precise control of the crystal orientation also ensures the consistency of the electrical and mechanical properties of the wafer, which is crucial to improving the performance and reliability of semiconductor devices. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1 It is a three-dimensional schematic diagram of a multi-line cut crystal rod, which shows the orientation of the crystal rod relative to the cutting lines and the crystal direction of the crystal rod.

[0018] Figure 2 A schematic diagram showing a first type of deviation in the orientation of the ingot relative to the cutting line.

[0019] Figure 3 A schematic diagram showing a second type of deviation in the orientation of the ingot relative to the cutting line.

[0020] Figure 4 A schematic diagram of the rotation of the crystal rod relative to its longitudinal axis is generated.

[0021] Figure 5 Schematic diagram of the bonding state of the first crystal ingot according to an embodiment of the present disclosure, wherein it is shown that the first crystal ingot is rotated relative to the reference bonding state.

[0022] Figure 6 Schematic top view of a device for adjusting crystal orientation according to an embodiment of the present disclosure.

[0023] Figure 7 Schematic side view of a device for adjusting crystal orientation according to an embodiment of the present disclosure.

[0024] Figure 8 Schematic top view of a first rotating unit of the device for adjusting crystal orientation according to an embodiment of the present disclosure.

[0025] Fig. 9 Schematic side view of a second rotating unit of the device for adjusting the crystal orientation according to an embodiment of the present disclosure.

[0026] Fig.10 is a schematic diagram of a method for adjusting crystal orientation according to an embodiment of the present disclosure. DETAILED DESCRIPTION

[0027] The technical solutions in the present disclosure will be described clearly and completely below in conjunction with the accompanying drawings in the present disclosure.

[0028] Crystalline direction refers to the direction of atomic arrangement in a crystal. In a single crystal, atoms, ions or molecules are arranged periodically according to certain rules. This arrangement forms the lattice structure of the crystal, and crystallographic direction is a concept that describes the orderliness of the atomic arrangement inside the crystal. Simply put, crystallographic direction describes the orientation of a specific crystal plane in a single crystal.

[0029] In the single crystal ingot pulled by the Czochralski method, the crystal orientation is inherited from the seed crystal. The crystal orientation of the seed crystal determines the crystal orientation of the ingot, because during the crystal growth process, the molten silicon will be arranged according to the lattice structure of the seed crystal.

[0030] Wafers are obtained by cutting a single crystal ingot into thin slices. In this process, the crystal orientation of the ingot is retained in the wafer. On the other hand, the contour features of the wafer, such as the two circular main surfaces of the wafer, are obtained by cutting. In this way, the angle and orientation of the ingot relative to the cutting line will directly affect the geometric relationship between the crystal orientation of the wafer and the contour features of the wafer. In other words, when the angle and orientation of the ingot relative to the cutting line are different, the geometric relationship between the crystal orientation of the cut wafer and the contour features of the wafer will also be different.

[0031] However, for finished wafers, the geometric relationship between the crystal orientation and contour features needs to meet specific requirements. That is to say, before being cut, the angle and orientation of the crystal rod relative to the cutting line also need to meet specific requirements, otherwise the crystal orientation of the finished wafer will be unqualified.

[0032] The geometric relationship between the crystal orientation of the crystal rod, the crystal orientation of the wafer and the contour features, and the factors affecting such geometric relationship will be described below in conjunction with the accompanying drawings.

[0033] As in Figure 1 As shown in FIG. 1 , the crystal rod R is moved along the direction of the hollow arrow and then cut into multiple wafers W by multiple cutting lines CL, wherein: Figure 1 For the purpose of clarity, only a single wafer W cut by two bold cutting lines CL is shown. Figure 1 , two exemplary crystal directions of the crystal rod R are also shown, wherein the first crystal direction CO1 parallel to the cutting line CL is schematically shown by the area filled with the cross section line, and the second crystal direction CO2 perpendicular to the cutting line CL is schematically shown by the area filled with dots, and the first crystal direction CO1 and the second crystal direction CO2 are perpendicular to each other and are perpendicular to the cross section RS of the crystal rod R. In addition, Figure 1In the case shown in , the longitudinal axis X of the crystal rod R is not only parallel to the plane defined by the multiple cutting lines CL, but also perpendicular to the multiple cutting lines CL. It is easy to understand that in this case, for the cut wafer W, both the first crystal orientation CO1 and the second crystal orientation CO2 retained in the wafer W are perpendicular to the circular main surface of the wafer W. It should be noted that the "vertical" here is the above-mentioned "geometric relationship". Of course, such a "geometric relationship" can also be expressed in other ways, such as the angle between the first crystal orientation CO1 and the second crystal orientation CO2 and the circular main surface of the wafer W, etc. In addition, the "circular main surface" here is the above-mentioned "contour feature". Of course, such a "contour feature" can also be expressed in other ways, such as the "annular circumferential surface", "circular edge", "notch feature" and so on of the wafer. It is easy to understand that when the "contour feature" is richer, the "geometric relationship" will also become richer.

[0034] However, it is easy to understand that the crystal rod R may be improperly bonded. Figure 1 The situation is different from that shown in , which is described in detail below.

[0035] In one case, such as Figure 2 As shown in FIG. 1 , although the longitudinal axis X of the crystal rod R is still parallel to the plane defined by the plurality of cutting lines CL, the longitudinal axis X of the crystal rod R is no longer perpendicular to the plurality of cutting lines CL, but the angle between the longitudinal axis X and the plurality of cutting lines CL is as follows: Figure 2 In this case, the return combination Figure 1 It is easy to understand that, for the obtained wafer W, the first crystal orientation CO1 still meets the requirements or is still perpendicular to the circular main surface of the wafer W, but the second crystal orientation CO2 no longer meets the requirements or is no longer perpendicular to the circular main surface of the wafer W.

[0036] In another case, as in Figure 3 As shown in FIG. 1 , although the longitudinal axis X of the crystal rod R is still perpendicular to the plurality of cutting lines CL, the longitudinal axis X of the crystal rod R is no longer parallel to the plane defined by the plurality of cutting lines CL, but the angle between the longitudinal axis X and the plane is as follows: Figure 3 In this case, the return combination Figure 1 It is easy to understand that, for the obtained wafer W, the second crystal orientation CO2 still meets the requirements or is still perpendicular to the circular main surface of the wafer W, but the first crystal orientation CO1 no longer meets the requirements or is no longer perpendicular to the circular main surface of the wafer W.

[0037] Of course, although not shown in the drawings, it is easy to understand that in another case, the longitudinal axis X of the crystal rod R is neither perpendicular to the multiple cutting lines CL nor parallel to the plane defined by the multiple cutting lines CL, or in other words, the crystal rod R is bonded so that Figure 2 The situation shown in Figure 3 In this case, the return combination Figure 1 It is easy to understand that, for the wafer W obtained in this way, neither the first crystal orientation CO1 nor the second crystal orientation CO2 is perpendicular to the circular main surface of the wafer W.

[0038] In another case, even if the crystal rod R is bonded at the same position, for example, bonded as Figure 3 As shown in FIG. 1 , if the crystal rod R rotates around its longitudinal axis X, the geometric relationship between the crystal orientation of the wafer W and the contour features of the wafer W will also change. Figure 4 This is explained in detail.

[0039] Figure 4 For Figure 3 A side view of the left side of the Figure 4 For the crystal rod R shown by the dotted line on the left, only Figure 1 The situation shown in Figure 3 The position change relative to the cutting line CL in the case shown in FIG. 1 is obtained after the crystal rod R shown by the solid line on the right is rotated by a certain angle γ around its longitudinal axis X, as shown in FIG. Figure 4 In this case, the return combination Figure 3 and Figure 1 It is easy to understand that for the wafer W obtained from the crystal rod R shown by the solid line, the first crystal orientation CO1 and the second crystal orientation CO2 are not perpendicular to the circular main surface of the wafer W, which is different from the crystal orientation of the wafer W obtained from the crystal rod R shown by the dotted line.

[0040] In summary, for the wafer W cut from the crystal rod R, the geometric relationship between the crystal orientation and the contour features of the wafer W can be expressed as follows: Figure 2 The angle α between the longitudinal axis X of the crystal rod R and the cutting line CL shown in FIG. Figure 3 The angle β between the longitudinal axis X of the crystal rod R shown in FIG. 1 and the plane defined by the plurality of cutting lines CL and the angle β between the longitudinal axis X of the crystal rod R shown in FIG. 1 and the plane defined by the plurality of cutting lines CL as shown in FIG. Figure 4 The angle γ of the crystal rod R shown in FIG. 1 rotated around its longitudinal axis X is determined by these three factors.

[0041] On the other hand, the angle γ of the crystal rod R rotating around its own longitudinal axis X needs to be known before cutting the crystal rod R, which can be obtained by, for example, the angle of the groove formed on the crystal rod R. In addition, the geometric relationship between the crystal orientation and the contour features of the wafer W cut from the crystal rod R is easy to measure, for example, by using an X-ray orientation instrument, which uses X-ray diffraction analysis technology to provide simple, fast, and high-precision crystal orientation measurement. Therefore, the positional relationship between the crystal rod R and the multiple cutting lines CL can be reversely inferred based on the angle γ of the crystal rod R rotating around its own longitudinal axis X and the geometric relationship between the crystal orientation and the contour features of the wafer W. The present disclosure is based on this concept.

[0042] Specifically, see Figures 5 to 7 An embodiment of the present disclosure provides a device 1 for adjusting a crystal orientation. The device 1 may include a determining unit 10 , a first rotating unit 20 , and a second rotating unit 30 .

[0043] Figure 6 and Figure 7 The above-mentioned determination unit 10 is shown in FIG. 1 , and the determination unit 10 is used to determine the first crystal rod R1 (in Figure 6 and Figure 7 The first included angle A1 between the longitudinal axis X1 of the first crystal rod R1 and the plurality of cutting lines CL in the cutting line plane P defined by the plurality of cutting lines CL is determined by the rotation angle RA of the longitudinal axis X1 of the first crystal rod R1 relative to the reference bonding state and the geometric relationship between the crystal orientation of the wafer cut from the first crystal rod R1 and the contour feature of the wafer. Figure 6 As shown in FIG. 1 , a second angle A2 between the longitudinal axis X1 of the first crystal rod R1 and the cutting line plane P is determined, as shown in FIG. Figure 7 As shown in Figure 5 As shown in the figure, the left diagram shows an exemplary reference bonding state, in which the first crystal direction CO1 of the crystal rod is horizontal and the second crystal direction CO2 is vertical, and the right diagram shows the state in which the first crystal rod R1 is actually bonded. In addition, both the reference bonding state and the actual bonding state can be determined by the notch formed on the crystal rod not shown in the figure.

[0044] Figure 6 The first rotating unit 20 is more clearly shown in FIG. 1 , which is used to rotate the second crystal rod R2 bonded to the same position as the first crystal rod R1 around a first rotating axis RX1 perpendicular to the cutting line plane P based on the first angle A1, so that the longitudinal axis X2 of the second crystal rod R2 is perpendicular to the multiple cutting lines CL. Figure 6The solid line in FIG. 1 shows the second crystal rod R2 after rotation, that is, the second crystal rod R2 before rotation overlaps with the first crystal rod R1 shown by the dotted line. Figure 6 In the top view of FIG. 1 , the second crystal rod R2 is actually not observable, but is illustrated by a solid line for the purpose of clarity of the drawing.

[0045] Figure 7 , the second rotating unit 30 is more clearly shown in FIG. 1 , which is used to rotate the second crystal rod R2 around a second rotating axis RX2 perpendicular to the longitudinal axis X2 of the second crystal rod R2 and parallel to the cutting line plane P based on the second angle A2, so that the longitudinal axis X2 of the second crystal rod R2 is parallel to the cutting line plane P. Similarly, in Figure 7 The solid line in FIG. 1 shows the second crystal rod R2 after rotation, that is, the second crystal rod R2 before rotation overlaps with the first crystal rod R1 shown by the dotted line. Figure 7 In the side view of FIG. 1 , the second crystal rod R2 can actually be observed, so it is shown by a solid line.

[0046] For example, suppose Figure 1 The bonding state of the crystal rod R shown in is the reference bonding state, that is, the rotation angle RA of the first crystal rod R1 around its own longitudinal axis X1 relative to the reference bonding state is zero degree. In addition, after the first crystal rod R1 is cut into wafers, the angle between the second crystal direction CO2 of the cut wafer and the circular main surface of the wafer is measured to be 80°, and the angle between the first crystal direction CO1 of the cut wafer and the circular main surface of the wafer is measured to be 90°. Then, the determination unit 10 can determine that the first angle A1 is 80° and the second angle A2 is 0°. Accordingly, the first rotation unit 20 can rotate the second crystal rod R2 by 10° so that its longitudinal axis X2 is perpendicular to the multiple cutting lines CL, and the second rotation unit can rotate the second crystal rod R2 by 0° or not rotate the second crystal rod R2 because the longitudinal axis X2 of the second crystal rod R2 is already parallel to the cutting line plane P.

[0047] It should also be noted that the above description of "the second crystal rod R2 bonded to the same position as the first crystal rod R1" only refers to the same position of the geometric contour, and does not require that the rotation angle of the second crystal rod R2 relative to the reference bonding state is the same as that of the first crystal rod R2. In other words, even if the rotation angle is different, the second crystal rod R2 is still bonded to the same position as the first crystal rod R1. The reason is that, as shown in Figure 1 It is easy to understand that, as long as the crystal rod R is correctly positioned, the crystal rod R rotates around its longitudinal axis X, which will not affect the geometric relationship between the crystal orientation of the cut wafer W and the contour features of the wafer W.

[0048] Through the device 1 for adjusting the crystal orientation provided by the embodiment of the present disclosure, the position and direction of the second crystal rod R2 relative to the multiple cutting lines CL can be precisely controlled. Specifically, the determination unit 10 can calculate the first angle A1 and the second angle A2 according to the rotation angle RA of the first crystal rod R1 and the geometric relationship between the crystal orientation and the contour feature, and use the first rotation unit 20 and the second rotation unit 30 to accurately rotate and adjust the second crystal rod R2 based on the calculated first angle A1 and second angle A2. This process ensures that the geometric relationship between the crystal orientation and the contour feature of the second crystal rod R2 during the cutting process meets the expectations, so that the crystal orientation deviation in the cut wafer is eliminated, and the quality and performance of the wafer are guaranteed. Since the crystal orientation deviation is eliminated, when these wafers are used for epitaxial process, the crystal phase deviation of the silicon wafer will no longer have an adverse effect on the haze condition. This means that the quality of the epitaxial surface is guaranteed, which has a positive impact on the formation of integrated circuits. The angular deviation between the wafer lattice stacking direction and the silicon wafer surface is controlled within an ideal range, which is conducive to improving the uniformity of the epitaxial layer and the performance of the device. By precisely controlling the crystal orientation of the wafer, the electrical and mechanical properties of each wafer can be ensured to be consistent. This is crucial for manufacturing high-performance semiconductor devices, because the consistency of the crystal orientation directly affects the electrical properties of the device, such as carrier mobility and the threshold voltage of the device. Therefore, this technical solution helps to improve the performance and reliability of semiconductor devices.

[0049] In some embodiments of the present disclosure, see Figure 8 , the first rotating unit 20 may include: Base 21; A first member 22, the first member 22 is hinged to the base 21, so that the first member 22 can rotate around the first rotation axis RX1, wherein the second crystal rod R2 is bonded to rotate with the first member 22; The first driver 23 is used to drive the first component 22 to rotate.

[0050] The design of the first rotating unit 20 enables easy adjustment of the rotation of the second crystal rod R2. The base 21 provides a stable support point for the entire first rotating unit 20, and the first component 22 is hinged to the base 21, allowing it to rotate freely around the first rotation axis RX1. This design enables the second crystal rod R2 to rotate with the first component 22, thereby simplifying the adjustment process. This design reduces the complexity of alignment and coordination between multiple components, improves positioning accuracy and rotation efficiency. By reducing additional adjustment steps, the time for the entire crystal rod preparation is shortened, thereby improving production efficiency.

[0051] In some embodiments of the present disclosure, see Fig. 9 , the second rotating unit 30 may include: A second member 31, the second member 31 is hinged to the first member 22, so that the second member 31 can rotate around the second rotation axis RX2, wherein the second crystal rod R2 is bonded to remain fixed relative to the second member 31; The second driver 32 is used to drive the second component 31 to rotate.

[0052] The design of the second rotating unit 30 provides a flexible dual rotation adjustment mechanism. The second member 31 is hinged to the first member 22, allowing it to rotate around the second rotation axis RX2. This design enables the second crystal rod R2 to remain fixed relative to the second member 31, while the second member 31 can be rotated as needed, thereby achieving precise adjustment of the second crystal rod R2. Through the design of the second member 31, precise position control of the second crystal rod R2 can be achieved. The second crystal rod R2 is bonded to remain fixed relative to the second member 31, which means that during the rotation process, the position and direction of the crystal rod can be precisely controlled, thereby ensuring that the geometric relationship between the crystal orientation of the crystal rod and the cutting line CL is as expected.

[0053] In some embodiments of the present disclosure, see Figure 8 , the first driver 23 may include: A first threaded hole 23H is formed in the base 21, as shown in Figure 8 Schematically shown by a dotted box; The first screw rod 23S cooperates with the first threaded hole 23H, The first screw 23S is screwed to move toward the first member 22 to drive the first member 22 .

[0054] Using the first screw rod 23S as a driving mechanism has a higher transmission efficiency compared with other driving methods. The threaded rod 23S can achieve precise linear motion conversion by directly cooperating with the movement of the first member 22. This direct driving method reduces energy loss in the transmission process and improves energy utilization efficiency. The screwing action of the threaded rod 23S can control the movement of the first member 22 very accurately, because the pitch of the thread determines the amount of movement caused by each rotation of the screw. This precise control allows the rotation angle of the first member 22 to be accurately set and adjusted, thereby ensuring that the crystal orientation adjustment of the second crystal rod R2 reaches the required accuracy. The first threaded hole 23H formed in the base 21 cooperates with the threaded rod 23S to provide a stable transmission structure. The movement of the threaded rod 23S in the threaded hole 23H is controlled, which reduces the structural deviation caused by vibration or impact and enhances the structural stability of the entire rotating unit.

[0055] As in Figure 8As shown in FIG. 1 , the number of the first drivers 23 may be two, and they are respectively located on both sides of the first rotation axis RX1, so that the second crystal rod R2 can be rotated in two opposite directions. Fig. 9 It is easy to understand that the number of the first drivers 23 can be four, so that the stability of the driving process is achieved by driving at more positions.

[0056] As in Figure 8 As shown in FIG. 1 , when the distance between the first screw 23S of the first driver 23 and the first rotation axis RX1 is D1, the distance D2 that the first screw 23S needs to move toward the first member 22 can be determined by the following relationship: tan(A1)= D1 / D2.

[0057] In some embodiments of the present disclosure, see Fig. 9 , the second driver 32 may include: The second threaded hole 32H formed in the first member 22 is Fig. 9 Schematically shown by a dotted box; A second screw rod 32S matched with the second threaded hole 32H; The second screw 32S is screwed to move toward the second member 31 to drive the second member 31 .

[0058] Similarly, using the second screw 32S for driving can provide precise force transmission and control. The pitch of the thread determines the amount of movement caused by each rotation of the screw, which allows the rotation angle of the second member 31 to be accurately set and adjusted. This precise control is crucial to ensure that the crystal orientation of the crystal ingot R2 is adjusted to the required accuracy.

[0059] As in Fig. 9 As shown in the figure, the number of the second drivers 32 can be two, and they are respectively located on both sides of the second rotation axis RX2, so that the second crystal rod R2 can be rotated in two directions opposite to each other. In addition, although not shown in detail in the drawings, it can be understood that the number of the second drivers 32 can be more, so that the stability of the driving process is achieved by driving at more positions.

[0060] When the distance between the second screw 32S of the second driver 32 and the second rotation axis RX2 is known, the distance that the second screw 32S needs to move toward the second component 31 can also be calculated, which will not be described in detail here.

[0061] In some embodiments of the present disclosure, see Fig. 9 The device 1 may further include a bonding plate 40 for bonding the second crystal rod R2 , and the bonding plate 40 is fixed to the second member 31 .

[0062] The main function of the adhesive plate 40 is to fix the second crystal rod R2 and ensure its stability during processing. By fixing the adhesive plate 40 to the second component 31, the second crystal rod R2 can be ensured to maintain a precise position during rotation and adjustment, reducing displacement caused by vibration or accidental impact, thereby ensuring processing accuracy.

[0063] In some embodiments of the present disclosure, see Figure 8 Combined with Fig. 9 The first member 22 may also be hinged on the base 21 so that the first member 22 can move in the extension direction of the first rotation axis RX1.

[0064] The hinge design of the first component 22 on the base 21 allows the second crystal rod R2 to be fed in the vertical direction. This design allows the first component 22 to not only rotate around the first rotation axis RX1, but also to move linearly in the extension direction of RX1, so that the second crystal rod R2 can be fed in the vertical direction, or the second crystal rod R2 can be moved relative to the multiple cutting lines CL in its own radial direction, so as to complete the cutting of the second crystal rod R2. This mobility is crucial for accurately controlling the position of the crystal rod during the cutting process. By accurately controlling the feeding speed and position of the crystal rod, it can be ensured that the relative position of the cutting line CL and the crystal rod is always kept in the best state, thereby improving the cutting quality.

[0065] In some embodiments of the present disclosure, see Fig. 9 Combined with Figure 8 The second member 31 may also be hinged on the first member 22 so that the second member 31 can move in the extension direction of the second rotation axis RX2.

[0066] The second crystal rod R2 can be fed in the horizontal direction by the hinge design of the second member 31 on the first member 22. This design allows the second member 31 to not only rotate around the second rotation axis RX2, but also to move linearly in the extension direction of RX2, so that the second crystal rod R2 can be fed in the horizontal direction, so that the second crystal rod R2 is at a position aligned with the multiple cutting lines CL in the vertical direction.

[0067] The present disclosure further provides a device for cutting a crystal rod, which is not shown in the drawings, and the device may include the device 1 for adjusting the crystal orientation according to the aforementioned embodiments of the present disclosure.

[0068] By using the device 1 for adjusting the crystal orientation described in the present disclosure, the crystal orientation accuracy of the cut wafer can be significantly improved. The device 1 ensures that the crystal orientation of the wafer is consistent with the predetermined crystal orientation by accurately adjusting the position and direction of the second crystal rod R2 relative to the plurality of cutting lines CL, thereby eliminating the crystal orientation deviation. The elimination of the crystal orientation deviation directly affects the quality of the epitaxial process. Since the crystal orientation deviation of the wafer is eliminated, the uniformity and integrity of the epitaxial layer are guaranteed, which is crucial to improving the performance of the integrated circuit.

[0069] See also Fig.10 Combined with Figure 6 and Figure 7 The present disclosure also provides a method for adjusting the crystal orientation, which may include: S101: determining a first angle A1 between the longitudinal axis X1 of the first crystal ingot R1 and the plurality of cutting lines CL in a cutting line plane P defined by the plurality of cutting lines CL, and determining a second angle A2 between the longitudinal axis X1 of the first crystal ingot R1 and the cutting line plane P, according to a rotation angle RA of the bonded first crystal ingot R1 around its longitudinal axis X1 relative to a reference bonding state and a geometric relationship between a crystal orientation of a wafer cut from the first crystal ingot R1 and a profile feature of the wafer. S102: Based on the first angle A1, the second crystal ingot R2 at the same position as the first crystal ingot R1 is rotated around a first rotation axis RX1 perpendicular to the cutting line plane P, so that the longitudinal axis X2 of the second crystal ingot R2 is perpendicular to the plurality of cutting lines CL; S103 : Based on the second angle A2 , the second crystal rod R2 is rotated around a second rotation axis RX2 perpendicular to the longitudinal axis X2 of the second crystal rod R2 and parallel to the cutting line plane P, so that the longitudinal axis X2 of the second crystal rod R2 is parallel to the cutting line plane P.

[0070] By precisely controlling the position and direction of the second crystal rod R2 relative to the cutting line CL, the crystal orientation deviation in the wafer is eliminated, ensuring the quality and performance of the wafer. The elimination of crystal orientation deviation optimizes the epitaxial process, improves the performance of integrated circuits, and ensures the consistency of the electrical and mechanical properties of the wafer, which is crucial to improving the performance and reliability of semiconductor devices.

[0071] It should be noted that the technical solutions described in the present disclosure can be combined arbitrarily without conflict.

[0072] The above is only a specific embodiment of the present disclosure, but the protection scope of the present disclosure is not limited thereto. Any person skilled in the art who is familiar with the technical field can easily think of changes or substitutions within the technical scope disclosed in the present disclosure, which should be included in the protection scope of the present disclosure. Therefore, the protection scope of the present disclosure should be based on the protection scope of the claims.

Claims

1. A device for adjusting crystal orientation, characterized in that: The device comprises: a determining unit, the determining unit being used to determine a first angle between the longitudinal axis of the first crystal ingot and a plurality of cutting lines in a cutting line plane defined by the plurality of cutting lines, and to determine a second angle between the longitudinal axis of the first crystal ingot and the cutting line plane, according to a rotation angle of the bonded first crystal ingot about its longitudinal axis relative to a reference bonding state and a geometric relationship between a crystal orientation of a wafer cut from the first crystal ingot and a contour feature of the wafer; a first rotating unit, the first rotating unit being used to rotate a second crystal ingot bonded to the same position as the first crystal ingot around a first rotating axis perpendicular to the cutting line plane based on the first included angle, so that a longitudinal axis of the second crystal ingot is perpendicular to the plurality of cutting lines; The second rotating unit is used to rotate the second crystal rod around a second rotating axis perpendicular to the longitudinal axis of the second crystal rod and parallel to the cutting line plane based on the second angle, so that the longitudinal axis of the second crystal rod is parallel to the cutting line plane.

2. The device for adjusting crystal orientation according to claim 1, characterized in that: The first rotating unit comprises: Pedestal; a first member, the first member being hinged to the base so that the first member can rotate around the first rotation axis, wherein the second crystal rod is bonded to rotate together with the first member; A first driver is used for driving the first component to rotate.

3. The device for adjusting crystal orientation according to claim 2, characterized in that: The second rotating unit comprises: a second member, the second member being hinged to the first member so that the second member can rotate about the second rotation axis, wherein the second crystal rod is bonded to remain fixed relative to the second member; A second driver is used for driving the second member to rotate.

4. The device for adjusting crystal orientation according to claim 2, characterized in that: The first driver comprises: a first threaded hole formed in the base; a first screw rod matched with the first threaded hole, The first screw is screwed to move toward the first member to drive the first member.

5. The device for adjusting crystal orientation according to claim 3, characterized in that: The second driver comprises: a second threaded hole formed in the first member; a second screw rod matched with the second threaded hole; The second screw is screwed to move toward the second member to drive the second member.

6. The device for adjusting crystal orientation according to claim 3, characterized in that: The device further includes a bonding plate for bonding the second crystal rod, wherein the bonding plate is fixed to the second member.

7. The device for adjusting crystal orientation according to claim 2, characterized in that: The first member is further hinged on the base so that the first member can move in the extending direction of the first rotation axis.

8. The device for adjusting crystal orientation according to claim 3, characterized in that: The second member is further hinged on the first member such that the second member is movable in the extending direction of the second rotation axis.

9. A device for cutting a crystal rod, characterized in that: The apparatus comprises the device for adjusting the crystal orientation according to any one of claims 1 to 8.

10. A method for adjusting crystal orientation, characterized in that: The method comprises: Determine a first angle between the longitudinal axis of the first crystal ingot and a plurality of cutting lines in a cutting line plane defined by the plurality of cutting lines, and determine a second angle between the longitudinal axis of the first crystal ingot and the cutting line plane, according to a rotation angle of the bonded first crystal ingot about its longitudinal axis relative to a reference bonding state and a geometric relationship between a crystal orientation of a wafer cut from the first crystal ingot and a contour feature of the wafer; Based on the first angle, a second crystal ingot at the same position as the first crystal ingot is rotated around a first rotation axis perpendicular to the cutting line plane, so that a longitudinal axis of the second crystal ingot is perpendicular to the plurality of cutting lines; Based on the second angle, the second crystal ingot is rotated around a second rotation axis that is perpendicular to the longitudinal axis of the second crystal ingot and parallel to the cutting line plane, so that the longitudinal axis of the second crystal ingot is parallel to the cutting line plane.

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