Circulating high-pressure deuterium loading system and control method

Abstract

The invention discloses a circulating high-pressure deuterium loading system and a control method. The circulating high-pressure deuterium loading system comprises a deuterium gas source bottle, a booster pump, a reaction cavity module, a gas buffer cavity, a pressure intensity detector and a pressure release valve, the booster pump, the reaction cavity module and the gas buffer cavity are connected in parallel, the deuterium gas source bottle is arranged on the main path, the booster pump is arranged on the first parallel branch, the gas buffer cavity is arranged on the second parallel branch, and the reaction cavity module is arranged on the third parallel branch; the pressure intensity detector and the pressure release valve are connected with the reaction cavity module; compared with a traditional high-pressure deuterium loading system, the high-pressure deuterium loading system has the advantages that no extra booster pump needs to be added, cyclic deuterium loading operation of the whole high-pressure deuterium loading system can be achieved only by adding one buffer cavity, replacement and popularization of traditional high-pressure hydrogen loading by the high-pressure deuterium loading technology are facilitated, and research, development and production of high-performance optical fiber components are assisted.

Description

Technical Field

[0001] The present application relates to the field of resource reuse, and in particular to a circulating high-voltage deuterium-carrying system and a control method. Background Art

[0002] In recent years, deuterium (D2) as an expensive isotope gas has been widely used in various high-pressure deuterium-loaded scenarios. For example, in order to reduce the hydroxyl (Si-OH) content in quartz optical fiber materials, it is necessary to place the quartz optical fiber in a high-pressure deuterium atmosphere for a certain period of time so that the Si-O free radicals react with the deuterium to form a sufficient amount of Si-OD to improve the long-term stability of the optical fiber. In the field of communications, it is usually necessary to treat non-dispersion-shifted optical fibers with high-pressure deuterium to achieve effective wavelength extension.

[0003] Since deuterium is an isotope of hydrogen, its flammable and explosive properties often make safety the primary requirement in the design of high-pressure deuterium / hydrogen-carrying equipment. Therefore, after each high-pressure reaction is completed, the industry habitually evacuates the remaining deuterium gas to high altitude to reduce the pressure in the reaction chamber module, and then takes out the reacted sample. Unlike traditional chemical reactions, the remaining deuterium gas content after high-pressure deuterium-carrying reactions often exceeds 95% of the initial total amount, and in many application scenarios, the purity of the tail gas is not significantly different from the initial gas source. Therefore, although the direct evacuation method fully considers the safety of system operation, it greatly increases the cost of deuterium-carrying reactions. Summary of the invention

[0004] In order to solve the above problems, the present application proposes a circulating high-pressure deuterium-loaded system and a control method, wherein the circulating high-pressure deuterium-loaded system includes: a deuterium gas source bottle, a booster pump, a reaction chamber module, a gas buffer chamber, a pressure detector and a pressure relief valve; the booster pump, the reaction chamber module and the gas buffer chamber are connected in parallel, and the deuterium gas source bottle is arranged on a main road, the booster pump is arranged on a first parallel branch, the gas buffer chamber is arranged on a second parallel branch, and the reaction chamber module is arranged on a third parallel branch; the pressure detector and the pressure relief valve are connected to the reaction chamber module; a first high-pressure valve is arranged on one side of the main road close to the deuterium gas source bottle; a second high-pressure valve and a fifth high-pressure valve are respectively arranged on both sides of the booster pump in the first parallel branch; a third high-pressure valve and a sixth high-pressure valve are respectively arranged on both sides of the gas buffer chamber in the second parallel branch; a fourth high-pressure valve and a seventh high-pressure valve are respectively arranged on both sides of the reaction chamber module in the third parallel branch.

[0005] In one example, the reaction chamber module includes one reaction chamber or a plurality of reaction chambers connected in parallel.

[0006] In one example, the first high-pressure valve and the second high-pressure valve are pressure reducing valves.

[0007] The present application also provides a control method for a circulating high-pressure deuterium-loaded system, which is applied to the above-mentioned circulating high-pressure deuterium-loaded system, and the method includes: after placing a sample in a reaction chamber, opening a first high-pressure valve, a fifth high-pressure valve and a seventh high-pressure valve, and closing the remaining high-pressure valves, and pressurizing the low-pressure deuterium gas from the deuterium gas source bottle into the reaction chamber module; when the pressure value of the reaction chamber module reaches a first preset threshold, closing the first high-pressure valve, the fifth high-pressure valve and the seventh high-pressure valve; after the sample reaches the required reaction time in the reaction chamber module, opening the second high-pressure valve, the fourth high-pressure valve, the fifth high-pressure valve and the sixth high-pressure valve, so as to cache the residual deuterium gas from the reaction chamber module after being pressurized by a booster pump into the gas buffer chamber; when the pressure in the reaction chamber module is lower than the second preset threshold, stopping the booster pump, closing the second high-pressure valve, the fourth high-pressure valve, the fifth high-pressure valve and the sixth high-pressure valve, and opening the pressure relief valve of the reaction chamber module; when the pressure in the reaction chamber module is lower than the third preset threshold, opening the reaction chamber module to take out the sample.

[0008] In one example, when the pressure in the reaction chamber module is lower than the third preset threshold, after opening the reaction chamber module to take out the sample, the method further includes: after placing a new sample in the reaction chamber, closing the first high-pressure valve, the fourth high-pressure valve and the sixth high-pressure valve, and opening the remaining high-pressure valves to cache the deuterium gas from the gas buffer chamber into the reaction chamber module after being pressurized by a booster pump; when the reaction chamber module reaches the first preset threshold, closing all high-pressure valves and waiting for the sample to complete the deuterium loading reaction.

[0009] In one example, after the residual deuterium gas is pressurized by a booster pump from the reaction chamber module and cached in a gas cache chamber, the method further includes: monitoring the deuterium gas concentration in the gas cache chamber; and stopping the cycle when the deuterium gas concentration is lower than a fourth preset threshold.

[0010] In one example, when the deuterium gas concentration is lower than a fourth preset threshold value, after the circulation is stopped, the method further includes: opening the first high-pressure valve, the fifth high-pressure valve and the seventh high-pressure valve, and closing the remaining high-pressure valves, and supplementing and pressurizing the low-pressure deuterium gas from the deuterium gas source bottle into the reaction chamber module; when the pressure value of the reaction chamber module reaches the first preset threshold value, closing the first high-pressure valve, the fifth high-pressure valve and the seventh high-pressure valve.

[0011] In one example, before placing the sample in the reaction chamber, the method further includes: if the internal pressure of the reaction chamber is higher than a third preset threshold, opening a pressure relief valve of the reaction chamber until the internal pressure of the reaction chamber is lower than the third preset threshold; closing the pressure relief valve, and opening the reaction chamber.

[0012] The method proposed in this application can bring the following beneficial effects: compared with the traditional high-pressure deuterium-loaded system, this solution does not require the addition of an additional booster pump, and only requires the addition of a buffer cavity to realize the cyclic deuterium-loaded operation of the entire high-pressure deuterium-loaded system, which is conducive to the replacement and promotion of high-pressure deuterium-loaded technology for traditional high-pressure hydrogen-loaded technology, and helps the research and development and production of high-performance optical fiber components. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] The drawings described herein are used to provide a further understanding of the present application and constitute a part of the present application. The illustrative embodiments of the present application and their descriptions are used to explain the present application and do not constitute an improper limitation on the present application. In the drawings:

[0014] Figure 1 A simple schematic diagram of a conventional high-pressure deuterium-carrying system in an embodiment of the present application;

[0015] Figure 2 This is a schematic structural diagram of a circulating high-pressure deuterium-carrying system in an embodiment of the present application;

[0016] Figure 3 This is a schematic structural diagram of a general application form of a circulating high-pressure deuterium-carrying system in an embodiment of the present application;

[0017] Figure 4 Schematic diagram of a flow chart of a control method for a circulating high-pressure deuterium-carrying system in an embodiment of the present application. DETAILED DESCRIPTION

[0018] In order to make the purpose, technical solution and advantages of the present application clearer, the technical solution of the present application will be clearly and completely described below in combination with the specific embodiments of the present application and the corresponding drawings. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of the present application.

[0019] The technical solutions provided by various embodiments of the present application are described in detail below in conjunction with the accompanying drawings.

[0020] Figure 1This is a simple schematic diagram of a traditional high-pressure deuterium-loaded system. The system includes a high-purity deuterium gas source bottle 1, a booster pump A1, a reaction chamber module A2, and three high-pressure valves (F1, F2, F3, and F4), wherein each component is connected by a high-pressure gas pipe. The high-pressure reaction chamber module A2 can only be manually opened for sample placement and sampling under a pressure relief safety state. Therefore, the reaction chamber module usually needs to be equipped with a pressure sensor D1 to collect the pressure in the chamber. When the pressure drops to a safe state, the chamber can be opened for sampling. At the same time, when the pressure in the chamber is abnormally high, the pressure relief valve F4 automatically performs emergency pressure relief. Figure 1 The pipeline from F1 to F2 and then to A2 is a redundant pipeline. Figure 2 and Figure 3 For the traditional deuterium-loaded equipment, the complete operation process is as follows:

[0021] S101: Close F1, open F4, and after the pressure in the reaction chamber module is fully released, open the chamber to load the sample and then close the chamber door.

[0022] S102: Open F1 and F3, and close F4; the F1 valve is a pressure reducing valve, which reduces the pressure of the gas in the initial gas cylinder (usually requires a pressure of <1Mpa) and then injects it into the booster pump A1.

[0023] S103: A1 pressurizes the low-pressure gas from the gas cylinder 1 into the reaction chamber module A2, and closes F3 and F1 after the pressure reaches the target value.

[0024] S104: After the sample reaches the required reaction time in the reaction chamber module A2, F4 is turned on to remove the residual deuterium gas until the pressure in the chamber drops to a safe value and then the chamber is opened for sampling; at this point, a single high-pressure deuterium loading operation is completed.

[0025] Although the above process fully considers the safety of system operation, it greatly increases the cost of deuterium loading reaction.

[0026] Figure 2 A schematic diagram of a circulating high-pressure deuterium-carrying system provided for one or more embodiments of this specification. It includes: a deuterium gas source bottle, a booster pump, a reaction chamber module, a gas buffer chamber, a pressure detector, and a pressure relief valve. Compared with the traditional high-pressure deuterium-carrying system, only one gas buffer chamber A22 and four high-pressure valves ( Figure 2 Specifically, in the circulating high-pressure deuterium-carrying system, the booster pump A21, the reaction chamber module A23, and the gas buffer chamber are connected in parallel, and the deuterium gas source bottle 21 is arranged on the main line, the booster pump is arranged on the first parallel branch, the gas buffer chamber is arranged on the second parallel branch, and the reaction chamber module is arranged on the third parallel branch; the pressure detector and the pressure relief valve are connected to the reaction chamber module ( Figure 2A first high-pressure valve F21 is arranged on the main line near the deuterium gas source bottle; a second high-pressure valve F22 and a fifth high-pressure valve F25 are respectively arranged on both sides of the booster pump in the first parallel branch; a third high-pressure valve F23 and a sixth high-pressure valve F26 are respectively arranged on both sides of the gas buffer chamber in the second parallel branch; a fourth high-pressure valve F24 and a seventh high-pressure valve F27 are respectively arranged on both sides of the reaction chamber module in the third parallel branch, wherein the first high-pressure valve and the second high-pressure valve are pressure reducing valves.

[0027] Based on the circulating high-pressure deuterium-loaded system provided in the embodiment of the present application, the following steps need to be performed during the pressurization process:

[0028] S201: close the gas supply valve, open the pressure relief valve of the reaction chamber, and after the pressure in the reaction chamber is fully released, open the chamber to load the sample and then close the chamber door;

[0029] S202: Open F21, F25, and F27, and close F22, F23, F26, and F24. The gas pressure in the initial gas cylinder is increased by the pressure pump A21 and injected into the reaction chamber A23. When the pressure in the reaction chamber reaches the desired target value, close F21, F25, and F27.

[0030] S203: After the sample reaches the required reaction time in the reaction chamber A2, the deuterium loading reaction is completed.

[0031] However, unlike the direct sampling operation after depressurization in the traditional scheme, the scheme disclosed in the present invention realizes the recovery and secondary recycling of deuterium gas through the following operations:

[0032] S204: After the sample reaches the required reaction time in the reaction chamber module A23, open F24, F22, F25, and F26 to remove the residual deuterium gas to the buffer chamber A22 for temporary storage, where F22 is a pressure relief valve, which releases the high-pressure gas in the reaction chamber module A23 to the specified pressure of the booster pump and then pressurizes it to the gas buffer chamber A22. Obviously, the upper limit of the single recovery rate of the system depends on the booster ratio of the booster pump. When the partial pressure of the gas pipeline is ignored, assuming that the booster ratio of the booster pump is 1:N, the upper limit of the single recovery rate is (N-1) / N. Usually, N>40, so the theoretical upper limit of the single recovery rate is>97%.

[0033] S205: When the gas is fully buffered in support A22, the pressure in the reaction chamber module is about the minimum input pressure of the booster pump. At this time, the deuterium gas source bottle A21 stops working, and F24, F22, F25, and F26 are closed. The pressure relief valve of the reaction chamber module is opened to reduce the residual pressure in the chamber to a safe value and then the chamber is opened for sampling. At this point, a single high-pressure deuterium loading operation is completed. At this time, >90% of the deuterium gas is recovered to the gas buffer chamber A22.

[0034] S206: After the sampling and secondary loading are completed, the gas buffer chamber A22 becomes the new gas source (replacing the deuterium gas source bottle 21). The secondary deuterium loading reaction operation only needs to close F21, F24, and F26, and open F23, F22, F25, and F27. At this time, the high-pressure gas source in the gas buffer chamber A22 is continuously pressurized to the reaction chamber module A23 through the pressure relief valve F22-boosting pump A21. After the pressure in the reaction chamber module A23 reaches the specified reaction pressure, all valves are closed, and the deuterium loading reaction of the sample in the reaction chamber module A23 is waited for to be completed. At this time, the secondary recycling of the deuterium gas is completed.

[0035] S207: After the secondary cycle of deuterium loading is completed, the above process S204-S206 is repeated, and most of the deuterium gas (>90%) in the reaction chamber module continues to return to the gas buffer chamber to complete multi-layer recycling.

[0036] S208: Since the boosting ratio of the booster pump is limited, at least 1 / N of the deuterium gas cannot be recovered in a single cycle operation. When the number of cycles is large enough, the deuterium gas content in the cavity may not be able to meet the requirements of the high-pressure deuterium-loaded reaction. At this time, only process 2 needs to be executed to compensate the deuterium gas in the gas cylinder 21 into the system.

[0037] like Figure 3 The figure shows a general application form of a circulating high-pressure deuterium-carrying system, which consists of a common gas cylinder 31, a common booster A31, a deuterium gas buffer chamber A32 and multiple parallel reaction chambers. Here, 4 parallel reaction chambers (A33\A34\A35\A36) are taken as an example, and the pressure detectors and automatic pressure relief valves attached to each reaction chamber are omitted. Obviously Figure 3 The system shown is Figure 2 The general expansion form of F34-A33-F37 is completely equivalent Figure 2 F24-A23-F27 in the process can be recorded as the No. 1 reaction chamber, while G1-A34-H1, G2-A35-H2, G3-A36-H3 can be recorded as the No. 2 reaction chamber, the No. 3 reaction chamber, and the No. 4 reaction chamber. Each reaction chamber operates independently in parallel, and can realize the recycling of deuterium gas by sharing a buffer chamber A32. The entire operation process is exactly the same as the above procedures S201-S208, and the pressure of each reaction chamber can be independently set by the common booster A31, and the gas source of the entire system can be effectively supplemented by the common gas cylinder 31.

[0038] Figure 4 A schematic flow chart of a control method for a circulating high-pressure deuterium-loaded system provided for one or more embodiments of this specification. The process can be executed by a computing device in the corresponding field, and some input parameters or intermediate results in the process allow manual intervention and adjustment to help improve accuracy.

[0039] The implementation of the analysis method involved in the embodiment of the present application can be a terminal device or a server, and the present application does not make any special restrictions on this. For the convenience of understanding and description, the following embodiments are described in detail using the server as an example. It should be noted that the server can be a single device or a system composed of multiple devices, that is, a distributed server, and the present application does not make any specific restrictions on this.

[0040] like Figure 4 As shown, the embodiment of the present application provides a control method for a circulating high-pressure deuterium-loaded system, comprising:

[0041] S401: After placing the sample in the reaction chamber, open the first high-pressure valve, the fifth high-pressure valve and the seventh high-pressure valve, and close the remaining high-pressure valves to pressurize the low-pressure deuterium gas from the deuterium gas source bottle into the reaction chamber module.

[0042] S402: When the pressure value of the reaction chamber module reaches a first preset threshold, the first high-pressure valve, the fifth high-pressure valve and the seventh high-pressure valve are closed.

[0043] S403: After the sample reaches the required reaction time in the reaction chamber module, the second high-pressure valve, the fourth high-pressure valve, the fifth high-pressure valve and the sixth high-pressure valve are opened to buffer the residual deuterium gas from the reaction chamber module into the gas buffer chamber after being pressurized by the booster pump.

[0044] S404: When the pressure in the reaction chamber module is lower than the second preset threshold, the booster pump stops working, and the second high-pressure valve, the fourth high-pressure valve, the fifth high-pressure valve and the sixth high-pressure valve are closed, and the pressure relief valve of the reaction chamber module is opened.

[0045] S405: When the pressure in the reaction chamber module is lower than a third preset threshold, the reaction chamber module is opened to take out the sample.

[0046] In one embodiment, when a cycle is performed, after a new sample is placed in the reaction chamber, the first high-pressure valve, the fourth high-pressure valve and the sixth high-pressure valve are closed, and the remaining high-pressure valves are opened to cache the deuterium gas from the gas buffer chamber into the reaction chamber module after being pressurized by a booster pump; when the reaction chamber module reaches a first preset threshold, all high-pressure valves are closed to wait for the sample to complete the deuterium loading reaction.

[0047] In one embodiment, during the cycle, after the residual deuterium gas from the reaction chamber module is pressurized by the booster pump and cached in the gas cache chamber, the deuterium gas concentration in the gas cache chamber needs to be monitored; when the deuterium gas concentration is lower than a fourth preset threshold, such as 90%, the cycle is stopped.

[0048] In one embodiment, after the circulation is stopped, the low-pressure deuterium gas from the deuterium gas source bottle can be supplemented and pressurized into the reaction chamber module by opening the first high-pressure valve, the fifth high-pressure valve and the seventh high-pressure valve, and closing the remaining high-pressure valves; when the pressure value of the reaction chamber module reaches the first preset threshold, the first high-pressure valve, the fifth high-pressure valve and the seventh high-pressure valve are closed.

[0049] In one embodiment, before opening the reaction chamber, it is necessary to monitor the pressure inside the reaction chamber. If the pressure inside the reaction chamber is higher than a third preset threshold, the pressure relief valve of the reaction chamber is opened until the pressure inside the reaction chamber is lower than the third preset threshold; then the pressure relief valve can be closed and the reaction chamber can be opened.

[0050] Each embodiment in this application is described in a progressive manner, and the same or similar parts between the embodiments can be referred to each other, and each embodiment focuses on the differences from other embodiments. In particular, for the device and medium embodiments, since they are basically similar to the method embodiments, the description is relatively simple, and the relevant parts can be referred to the partial description of the method embodiments.

[0051] The devices and media provided in the embodiments of the present application correspond one-to-one to the methods. Therefore, the devices and media also have similar beneficial technical effects as the corresponding methods. Since the beneficial technical effects of the methods have been described in detail above, the beneficial technical effects of the devices and media will not be repeated here.

[0052] Those skilled in the art will appreciate that the embodiments of the present application may be provided as methods, systems, or computer program products. Therefore, the present application may adopt the form of a complete hardware embodiment, a complete software embodiment, or an embodiment in combination with software and hardware. Moreover, the present application may adopt the form of a computer program product implemented in one or more computer-usable storage media (including but not limited to disk storage, CD-ROM, optical storage, etc.) that include computer-usable program code.

[0053] The present application is described with reference to the flowcharts and / or block diagrams of the methods, devices (systems), and computer program products according to the embodiments of the present application. It should be understood that each process and / or box in the flowchart and / or block diagram, as well as the combination of the processes and / or boxes in the flowchart and / or block diagram, can be implemented by computer program instructions. These computer program instructions can be provided to a processor of a general-purpose computer, a special-purpose computer, an embedded processor, or other programmable data processing device to generate a machine, so that the instructions executed by the processor of the computer or other programmable data processing device generate instructions for implementing the processes in the flowchart and / or block diagram. Figure 1 A process or multiple processes and / or boxes Figure 1 A device that provides the functions specified in a block or multiple blocks.

[0054] These computer program instructions may also be stored in a computer-readable memory capable of directing a computer or other programmable data processing device to operate in a specific manner, so that the instructions stored in the computer-readable memory produce an article of manufacture comprising an instruction device, which implements the process Figure 1 A process or multiple processes and / or boxes Figure 1 A function specified in one or more boxes.

[0055] These computer program instructions can also be loaded onto a computer or other programmable data processing device so that a series of operating steps are executed on the computer or other programmable device to produce a computer-implemented process, thereby providing instructions for implementing the process. Figure 1 A process or multiple processes and / or boxes Figure 1 The steps for the functions specified in one or more boxes.

[0056] In a typical configuration, a computing device includes one or more processors (CPU), input / output interfaces, network interfaces, and memory.

[0057] The memory may include non-permanent storage in a computer-readable medium, random access memory (RAM) and / or non-volatile memory in the form of read-only memory (ROM) or flash RAM. The memory is an example of a computer-readable medium.

[0058] Computer readable media include permanent and non-permanent, removable and non-removable media that can be implemented by any method or technology to store information. Information can be computer readable instructions, data structures, program modules or other data. Examples of computer storage media include, but are not limited to, phase change memory (PRAM), static random access memory (SRAM), dynamic random access memory (DRAM), other types of random access memory (RAM), read-only memory (ROM), electrically erasable programmable read-only memory (EEPROM), flash memory or other memory technology, compact disk read-only memory (CD-ROM), digital versatile disk (DVD) or other optical storage, magnetic cassettes, magnetic tape magnetic disk storage or other magnetic storage devices or any other non-transmission media that can be used to store information that can be accessed by a computing device. As defined herein, computer readable media does not include transitory media such as modulated data signals and carrier waves.

[0059] It should also be noted that the terms "include", "comprises" or any other variations thereof are intended to cover non-exclusive inclusion, so that a process, method, commodity or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, commodity or device. In the absence of more restrictions, the elements defined by the sentence "comprises a ..." do not exclude the existence of other identical elements in the process, method, commodity or device including the elements.

[0060] The above are only embodiments of the present application and are not intended to limit the present application. For those skilled in the art, the present application may have various changes and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application should be included within the scope of the claims of the present application.

Claims

1. A circulating high-pressure deuterium-carrying system, characterized in that: include: Deuterium gas source bottle, booster pump, reaction chamber module, gas buffer chamber, pressure detector and pressure relief valve; The booster pump, the reaction chamber module and the gas buffer chamber are connected in parallel, and the deuterium gas source bottle is arranged on the main line, the booster pump is arranged on the first parallel branch, the gas buffer chamber is arranged on the second parallel branch, and the reaction chamber module is arranged on the third parallel branch; the pressure detector and the pressure relief valve are connected to the reaction chamber module; A first high-pressure valve is provided on the main line near the deuterium gas source bottle; A second high-pressure valve and a fifth high-pressure valve are respectively provided on both sides of the booster pump in the first parallel branch; A third high-pressure valve and a sixth high-pressure valve are respectively provided on both sides of the gas buffer chamber in the second parallel branch; A fourth high-pressure valve and a seventh high-pressure valve are respectively arranged on both sides of the reaction chamber module in the third parallel branch.

2. The circulating high-pressure deuterium-carrying system according to claim 1, characterized in that: The reaction chamber module includes one reaction chamber or a plurality of reaction chambers connected in parallel.

3. The circulating high-pressure deuterium-carrying system according to claim 1, characterized in that: The first high-pressure valve and the second high-pressure valve are pressure reducing valves.

4. A control method for a circulating high-pressure deuterium-carrying system, characterized in that: Applied to the circulating high-pressure deuterium-carrying system as claimed in claim 1, the method comprises: After placing the sample in the reaction chamber, the first high-pressure valve, the fifth high-pressure valve and the seventh high-pressure valve are opened, and the remaining high-pressure valves are closed, so that the low-pressure deuterium gas from the deuterium gas source bottle is pressurized into the reaction chamber module; When the pressure value of the reaction chamber module reaches a first preset threshold, closing the first high-pressure valve, the fifth high-pressure valve and the seventh high-pressure valve; After the sample reaches the required reaction time in the reaction chamber module, the second high-pressure valve, the fourth high-pressure valve, the fifth high-pressure valve and the sixth high-pressure valve are opened to buffer the residual deuterium gas from the reaction chamber module into the gas buffer chamber after being pressurized by the booster pump; When the pressure in the reaction chamber module is lower than the second preset threshold, the booster pump stops working, the second high-pressure valve, the fourth high-pressure valve, the fifth high-pressure valve and the sixth high-pressure valve are closed, and the pressure relief valve of the reaction chamber module is opened; When the pressure in the reaction chamber module is lower than a third preset threshold, the reaction chamber module is opened to take out the sample.

5. The method according to claim 4, characterized in that When the pressure in the reaction chamber module is lower than a third preset threshold, after opening the reaction chamber module to take out the sample, the method further includes: After placing a new sample in the reaction chamber, closing the first high-pressure valve, the fourth high-pressure valve and the sixth high-pressure valve, and opening the remaining high-pressure valves, so as to buffer the deuterium gas from the gas buffer chamber into the reaction chamber module after being pressurized by the booster pump; When the reaction chamber module reaches the first preset threshold, all high-pressure valves are closed to wait for the sample to complete the deuterium loading reaction.

6. The method according to claim 5, characterized in that After the residual deuterium gas is pressurized by a booster pump from the reaction chamber module and cached in the gas cache chamber, the method further comprises: monitoring the deuterium gas concentration in the gas buffer chamber; When the deuterium gas concentration is lower than a fourth preset threshold, the cycle is stopped.

7. The method according to claim 6, characterized in that When the deuterium gas concentration is lower than a fourth preset threshold, after stopping the cycle, the method further comprises: Open the first high-pressure valve, the fifth high-pressure valve and the seventh high-pressure valve, and close the remaining high-pressure valves, so as to supplement and pressurize the low-pressure deuterium gas from the deuterium gas source bottle into the reaction chamber module; When the pressure value of the reaction chamber module reaches a first preset threshold, the first high-pressure valve, the fifth high-pressure valve and the seventh high-pressure valve are closed.

8. The method according to claim 7, characterized in that Before placing the sample in the reaction chamber, the method further comprises: If the pressure inside the reaction chamber is higher than a third preset threshold, opening the pressure relief valve of the reaction chamber until the pressure inside the reaction chamber is lower than the third preset threshold; The pressure relief valve is closed, and the reaction chamber is opened.

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