Spin synapse device and memory computing device

Abstract

The embodiment of the invention provides a spin synapse device and an in-memory computing device. The spin synaptic device includes: a substrate; the bottom electrode layer, the complex oxide system layer, the magnetic storage layer and the top electrode layer are formed on the substrate from bottom to top, the magnetic storage layer is connected with a conductive structure layer, and the magnetic storage layer is connected with a peripheral circuit through the top electrode layer and the conductive structure layer; wherein the interface of the complex oxide system layer is provided with a two-dimensional electron gas area, under the condition that the magnetic storage layer receives read-write voltage of a peripheral circuit, the magnetic storage layer is used for generating spin current, and the spin current is injected into the complex oxide system layer to change the two-dimensional electron gas density of the two-dimensional electron gas area, so that the magnetic storage layer completes reading or writing of data. Therefore, the reading reliability of the device is improved.

Description

Technical Field

[0001] The present application relates to the field of synaptic technology, and in particular to a spin synaptic device and an in-memory computing device. Background Art

[0002] The development of artificial intelligence has led to a rapid increase in the demand for computing power, while the development of traditional von Neumann architecture has been unable to keep up with the rapid development of demand. Spintronic devices have become an emerging research direction in recent years due to their high speed, high energy efficiency, long-term retention and durability. However, spintronic devices are limited by a small switching ratio, which makes the external circuit design complex and is not conducive to improving reading reliability. Summary of the invention

[0003] The embodiments of the present application provide a spin synapse device and an in-memory computing device, which are used to improve the high-resistance and low-resistance state magnetoresistance ratio of the spin electronic device and improve the reliability of device reading.

[0004] In a first aspect, an embodiment of the present application provides a spin synapse device, comprising:

[0005] A substrate; and a bottom electrode layer, a complex oxide system layer, a magnetic storage layer and a top electrode layer formed from bottom to top on the substrate, wherein the magnetic storage layer is connected to a conductive structure layer, and the magnetic storage layer is connected to a peripheral circuit through the top electrode layer and the conductive structure layer;

[0006] There is a two-dimensional electron gas region at the interface of the complex oxide system layer. When the magnetic storage layer receives the read and write voltages of the peripheral circuit, the magnetic storage layer is used to generate a spin current. The spin current is injected into the complex oxide system layer to change the two-dimensional electron gas density of the two-dimensional electron gas region, so that the magnetic storage layer completes the reading or writing of data.

[0007] In one possible implementation, the magnetic storage layer includes a heavy metal layer and a magnetic layer formed from bottom to top on the complex oxide system layer, and the heavy metal layer extends in opposite first and second directions, exceeding boundaries of the magnetic layer in the first and second directions.

[0008] In a possible embodiment, the conductive structure layer includes a first conductive layer and a second conductive layer, the first conductive layer is connected to the portion of the heavy metal layer that exceeds the complex oxide system layer in the first direction, and the second conductive layer is connected to the portion of the heavy metal layer that exceeds the complex oxide system layer in the first direction.

[0009] In one possible implementation, the magnetic storage layer is used to generate spin currents with different polarization directions to enable data writing; the spin currents generated by the magnetic storage layer enter the magnetic layer, are injected into the complex oxide system layer, and change the two-dimensional electron gas density to enable data reading.

[0010] In one possible embodiment, during the reading or writing process of the spin synapse device, a write voltage is applied to the bottom electrode, a top auxiliary voltage is applied to the top electrode layer, the first conductive layer and the second conductive layer are grounded, and the charge flow is injected into the heavy metal layer and converted into a spin current through the spin-orbit coupling effect. While the spin current enters the magnetic layer, it is also injected into the complex oxide system, changing the density of the two-dimensional electron gas.

[0011] In one possible embodiment, the magnetic layer is a magnetic tunnel junction, wherein during the writing process of the magnetic storage layer, the top auxiliary voltage realizes the external field-free spin-orbit moment reversal of the ferromagnetic material in the magnetic layer through spin transfer torque, and injects spin current into the two-dimensional electron gas region, thereby changing the conductivity between the bottom electrode and the first conductive layer.

[0012] In a possible implementation, during the reading process of the magnetic storage layer, the bottom electrode is grounded, a top auxiliary voltage is applied to the top electrode layer, a spin current is injected into the two-dimensional electron gas region, the two-dimensional electron gas density is changed, and the resistance between the bottom electrode and the first conductive layer of the bottom electrode is read, and the resistance is used to indicate the read information.

[0013] In a possible implementation, the complex oxide system layer includes one or more complex oxides.

[0014] In a second aspect, an embodiment of the present application provides an in-memory computing device, wherein the above-mentioned spin synapse device is used as a synapse device in binary or multi-valued in-memory computing.

[0015] In one possible implementation,

[0016] In the process of in-memory computing weight modulation, the spin-orbit moment current of the magnetic storage layer drives the magnetic domain to move, the proportion of the spin direction of the magnetic storage layer changes, and different weights are linearly set;

[0017] When the in-memory computing device is reading in-memory computing data, different spin directions have proportions between the maximum charge and the minimum charge, showing different conductivity values, and when a read voltage is applied, an in-memory multiplication and addition operation is realized.

[0018] The spin synapse device and in-memory computing device provided in the embodiment of the present application are through a substrate; and, a bottom electrode layer, a complex oxide system layer, a magnetic storage layer and a top electrode layer formed from bottom to top on the substrate, the magnetic storage layer is connected to a conductive structure layer, and the magnetic storage layer is connected to a peripheral circuit through the top electrode layer and the conductive structure layer; wherein, there is a two-dimensional electron gas region at the interface of the complex oxide system layer, and when the magnetic storage layer receives the read and write voltage of the peripheral circuit, the magnetic storage layer is used to generate a spin current, and the spin current is injected into the complex oxide system layer to change the two-dimensional electron gas density of the two-dimensional electron gas region, so that the magnetic storage layer completes the reading or writing of data. Therefore, in the scheme of the present application, the spin synapse device generates a two-dimensional electron gas at the interface through the complex oxide layer, and changes the two-dimensional electron gas density under the action of spin-charge conversion. When writing information, different spin polarization directions bring different changes in the two-dimensional electron gas density. In the reading stage, when reading the spin polarization, the two-dimensional electron gas density changes, enhancing the high-low resistance ratio of the device. The change in the two-dimensional electron gas density caused by the regional magnetization direction causes the change in the high and low resistance states of the device. It can be used as a synaptic device in binary or multi-valued in-memory computing, improve the high and low resistance state magnetoresistance ratio of the spin electronic device, and improve the reliability of device reading. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] The accompanying drawings, which are incorporated in and constitute a part of the specification, illustrate embodiments consistent with the present application and, together with the description, serve to explain the principles of the present application.

[0020] Figure 1 A schematic diagram of the structure of the spin synapse device provided in this application;

[0021] Figure 2 The read-write mechanism of the spin synapse device provided in this application;

[0022] Figure 3 A flow chart for preparing the spin synapse device provided in this application;

[0023] Figure 4 In-memory computing operations for in-memory computing applications of the spin synapse device provided in this application.

[0024] The above drawings have shown clear embodiments of the present application, which will be described in more detail later. These drawings and text descriptions are not intended to limit the scope of the present application in any way, but to illustrate the concept of the present application to those skilled in the art by referring to specific embodiments. DETAILED DESCRIPTION

[0025] Exemplary embodiments will be described in detail herein, examples of which are shown in the accompanying drawings. When the following description refers to the drawings, the same numbers in different drawings represent the same or similar elements unless otherwise indicated. The implementations described in the following exemplary embodiments do not represent all implementations consistent with the present application. Instead, they are merely examples of devices and methods consistent with some aspects of the present application as detailed in the appended claims.

[0026] Figure 1 The schematic diagram of the structure of the spin synapse device provided in this application is as follows: Figure 1 As shown, the device includes:

[0027] A substrate; and a bottom electrode layer, a complex oxide system layer, a magnetic storage layer and a top electrode layer formed from bottom to top on the substrate, the magnetic storage layer is connected to a conductive structure layer, and the magnetic storage layer is connected to a peripheral circuit through the top electrode layer and the conductive structure layer;

[0028] Among them, there is a two-dimensional electron gas region at the interface of the complex oxide system layer. When the magnetic storage layer receives the read and write voltages of the peripheral circuit, the magnetic storage layer is used to generate a spin current. The spin current is injected into the complex oxide system layer to change the two-dimensional electron gas density in the two-dimensional electron gas region, so that the magnetic storage layer completes the reading or writing of data.

[0029] In this embodiment, a two-dimensional electron gas (2DEG) is an electronic system formed in a semiconductor heterojunction in which electrons are confined to move in two dimensions. This electron gas is usually formed at the interface of the heterojunction, and due to band discontinuity and quantum confinement, the electrons are confined to a two-dimensional region perpendicular to the interface. In this region, electrons can move freely along the interface plane, exhibiting quantized electronic properties. The two-dimensional electron gas density (the electron concentration of the two-dimensional electron gas) refers to the number of electrons per unit area in a two-dimensional electron gas system. A two-dimensional electron gas is a quantum state of electrons in which the movement of electrons is restricted in one direction, while they can move freely in the other two directions.

[0030] In this embodiment, the spin synapse device generates a two-dimensional electron gas at the interface through a complex oxide system, and the upper heavy metal / ferromagnetic layer is injected through spin current, and the density of the two-dimensional electron gas is changed under the action of spin-charge conversion. When writing information, different spin polarization directions bring different changes in the density of the two-dimensional electron gas. In the reading stage, when reading the spin polarization, the density of the two-dimensional electron gas changes, and the high-to-low resistance ratio of the device is enhanced. The present invention introduces a two-dimensional electron gas and a spin-charge conversion effect to achieve an increase in the magnetoresistance ratio. The effect of improving the high-to-low resistance state magnetoresistance ratio of the spin electronic device and improving the reliability of the device reading is achieved.

[0031] In one example, the magnetic storage layer includes a heavy metal layer and a magnetic layer formed from bottom to top on the complex oxide system layer, and the heavy metal layer extends in opposite first and second directions beyond boundaries of the magnetic layer in the first and second directions.

[0032] It is understood that the combination of heavy metal layer and magnetic layer can form an information storage medium with unique physical properties. In this structure, the heavy metal layer usually provides the spin-orbit moment effect, while the magnetic layer is responsible for storing information. This combination can be used to realize new storage technologies such as magnetic random access memory.

[0033] The spin-orbit moment effect is a new type of magnetic effect that uses current in non-magnetic metals to regulate magnetic domain flipping, domain wall movement, and spin dynamics behavior in ferromagnetic layers. In heavy metal / ferromagnetic metal heterostructures, current-driven magnetic moment manipulation can be achieved through interfacial spin-orbit coupling. Magnetic layers usually have perpendicular magnetic anisotropy, which means that their magnetic moments tend to align in a specific direction. This property helps to improve the stability and anti-interference ability of storage media.

[0034] In one example, the conductive structure layer includes a first conductive layer and a second conductive layer, the first conductive layer is connected to a portion of the heavy metal layer that extends beyond the complex oxide system layer in the first direction, and the second conductive layer is connected to a portion of the heavy metal layer that extends beyond the complex oxide system layer in the first direction.

[0035] like Figure 1 As shown, the overall structure of the device includes, from bottom to top, a bottom electrode, a first complex oxide layer, a second complex oxide layer, a two-dimensional electron gas region formed at the interface, a heavy metal layer, a magnetic layer, and a top electrode, wherein the top electrode and the bottom electrode are conductive materials connected to the peripheral circuit, such as one or more of Ti / Au, Ni / Au, TiN, SrRuO3, W, Ru, Ta, and Pt. The heavy metal layer part extends in the lateral direction, serving as the bottom electrode connected to the external circuit and the second conductive layer.

[0036] In one example, the complex oxide system is composed of one or more complex oxides, such as SrTiO3, LaAlO3 / SrTiO3, BiFeO3 / SrTiO3 or metal oxide / SrTiO3 system, and a two-dimensional electron gas is formed at the interface. The complex oxide layer mainly forms a two-dimensional electron gas at the interface through an interface effect, and the main materials include: SrTiO3, LaMnO3 / SrTiO3, BiFeO3 / SrTiO3, LaAlO3 / SrTiO3 or other metal oxide / SrTiO3 systems, wherein the metal oxide includes: AlOx, RuO, ZnO, CuO, WOx, TaOx, etc., one or more thereof. The magnetic layer serves as a functional layer for storing information, and can be a magnetic single-layer material, such as one or more of Co, CoFe, and CoFeB, or a heterostructure for storing spin information, such as one or more of Ta / CoFeB / MgO, W / CoFeB / MgO, Pt / CoFeB / MgO, Co / Pt, and IrMn / CoFeB / MgO multilayer structures, or a magnetic tunnel junction based on the basic structure of heavy metal layer / free layer / MgO / reference layer such as Ta / CoFeB / MgO / CoFeB, W / CoFeB / MgO / CoFeB, Pt / CoFeB / MgO / CoFeB, and IrMn / CoFeB / MgO / CoFeB.

[0037] In one example, the magnetic storage layer is used to generate spin currents with different polarization directions to enable data writing; the spin currents generated by the magnetic storage layer enter the magnetic layer, are injected into the complex oxide system layer, and change the two-dimensional electron gas density to enable data reading.

[0038] The heavy metal layer and the magnetic layer are combined into an information storage medium, which is adjacent to the complex oxide layer. The spin magnetization in the magnetic layer represents binary information. The charge flow is injected into the heavy metal layer and converted into a spin current through the spin-orbit coupling effect. Due to the spin current gradient, it is injected into the adjacent magnetic layer and the complex oxide layer interface. The density of the two-dimensional electron gas generated by different spin directions is different, and the resistance response △R is generated. In turn, the magnitude of the response voltage depends on the polarization direction of the spin injection and is non-volatile. During the read operation, the spin-charge conversion effect of the spin current of the ferromagnetic and complex oxide layers is used to improve the high-low resistance state magnetoresistance ratio.

[0039] In one example, during the reading or writing process of a spin synapse device, a write voltage is applied to the bottom electrode, a top auxiliary voltage is applied to the top electrode, the first conductive layer and the second conductive layer are grounded, and the charge flow is injected into the heavy metal layer and converted into a spin current through the spin-orbit coupling effect. While the spin current enters the magnetic layer, it is also injected into the complex oxide system, changing the density of the two-dimensional electron gas.

[0040] When writing information, different spin polarization directions bring different changes in the two-dimensional electron gas density. When reading spin polarization, the two-dimensional electron gas density changes, enhancing the high-low resistance ratio of the device. The change in the two-dimensional electron gas density caused by the regional magnetization direction causes the high and low resistance states of the device to change, which can be used as a synaptic device in binary or multi-valued in-memory computing.

[0041] In one example, the magnetic layer is a magnetic tunnel junction, wherein during the writing process of the magnetic storage layer, the top auxiliary voltage realizes the external field-free spin-orbit moment reversal of the ferromagnetic material in the magnetic layer through the spin transfer torque, and injects spin current into the two-dimensional electron gas region, thereby changing the conductivity between the bottom electrode and the first conductive layer.

[0042] The device read and write process is as follows Figure 2 As shown, in the process of writing 0, current is injected into the heavy metal layer from the bottom electrode 1. Due to the spin-orbit coupling, the heavy metal layer generates a longitudinal spin current. At this time, the top auxiliary voltage of the top electrode can drive the magnetization of the magnetic layer to a uniform spin direction, such as spin up. At this time, the device is represented as a storage state "0". In the process of writing "1", the current polarity is changed, and the heavy metal layer generates a spin current with an opposite spin direction. Under the action of the top auxiliary voltage of the top electrode, it is driven to a spin direction opposite to the former. At this time, the device is represented as a storage state "1".

[0043] In one example, during the reading process of the magnetic storage layer, the bottom electrode is grounded, a top auxiliary voltage is applied to the top electrode, a spin current is injected into the two-dimensional electron gas region, the two-dimensional electron gas density is changed, and the resistance between the bottom electrode layer and the first conductive layer is read, and the resistance is used to indicate the read information.

[0044] The device read and write process is as follows Figure 2 As shown, during the device reading process, a reading voltage is applied to the top electrode, and the spin current tunnels through the magnetic layer into the two-dimensional electron gas region. Under the action of spin-charge conversion, the spin polarization is converted into charge, and an electric charge flow is formed under the action of a fixed electric field, resulting in a change in the density of the two-dimensional electron gas and a difference in resistance value. Therefore, during the reading process, the magnetization information "0" and the magnetization information "1" cause the resistance of the two-dimensional electron gas region to decrease or increase. The purpose of using the resistance of the two-dimensional electron gas region to represent ferromagnetic information is achieved, and the margin of device reading is expanded and the device reliability is improved while ensuring the writing speed and energy efficiency.

[0045] In one example, the process of preparing a spin synapse device is as follows: Figure 3 As shown:

[0046] First, a bottom electrode 3 and a complex oxide layer are grown on a silicon, silicon oxide or SrTiO3 substrate by laser pulse deposition to form a basic structure of a two-dimensional electron gas. Then, the junction area is etched out by ion beam etching technology, and the conductive layer and the upper two-dimensional electron gas are isolated by SiO2.

[0047] Furthermore, a heavy metal layer, a magnetic layer and a top electrode are grown on the upper layer of the material by magnetron sputtering, and the heavy metal layer and the top electrode pattern area are patterned and etched by photolithography and ion beam etching techniques to prepare a complete device.

[0048] Figure 4 For the in-memory computing operation of the in-memory computing application of the spin synapse device provided in the present application, the above-mentioned spin synapse device is used as a synapse device in binary or multi-valued in-memory computing.

[0049] The spin synapse device can refer to the above method embodiment, and its implementation principle and technical effect are similar, so this embodiment will not be repeated here.

[0050] In-Memory Computing (IMC) is a computing paradigm that closely integrates data processing and storage, aiming to solve the "memory wall" problem in the traditional von Neumann architecture. In the traditional architecture, the processor and memory are separated, and data needs to be transferred back and forth between the two, which leads to a significant performance bottleneck. In-Memory Computing reduces the number of data movements by performing calculations directly in the storage device, thereby reducing energy consumption and latency, and improving the efficiency and responsiveness of the system. In-Memory Computing technology usually utilizes specific storage devices that can not only store data, but also perform simple computing operations such as addition, multiplication, or comparison.

[0051] In one example, the in-memory computing method of the spin synaptic device, the spin-orbit moment current locally switches the magnetization direction of the region, and the two-dimensional electron gas density produced by the spin-charge conversion changes, resulting in changes in the high and low resistance states of the device, which can be used as a synaptic device in binary or multi-valued in-memory computing. When the in-memory computing weights are modulated, the spin-orbit moment current drives the magnetic domains to move, the proportion of the spin direction of the magnetic layer changes, and different weights are set linearly. In the reading process, different spin direction proportions are between the maximum charge and the minimum charge, showing different conductivity values. When the read voltage is applied, the in-memory multiplication and addition operation is realized. In terms of the in-memory computing work of the device, the existing artificial intelligence training is inseparable from the neural network model.

[0052] like Figure 4 In the neural network model shown in a, a large number of matrix multiplication and addition operations of Y=ΣX·w are required, where Y is the neuron output value, X is the input value, and w is the synaptic weight. The in-memory calculation uses the device's own conductance and Kirchhoff calculation. It greatly simplifies the time and complexity of multiplication and addition calculations.

[0053] In this embodiment, the introduction of two-dimensional electron gas further increases the reliability of the device in the multi-valued in-memory computing process. When the weights are modulated in the in-memory computing training process, the spin-orbit moment current drives the magnetic domain to move, and the proportion of the spin direction of the magnetic layer changes. Figure 4 The spin direction in the be magnetic layer is shown. The proportion of spin orientation represents different multi-value information, and different weights can be written linearly through the movement of magnetic domains. During the in-memory calculation process, the proportion of spins also affects the electron density of the two-dimensional electron gas, causing the device conductivity to change, which is linearly mapped to the weight value. Figure 4 b and Figure 4 The consistent flipping of e's spin polarization leads to a maximized increase or decrease in the two-dimensional electron gas, producing minimum and maximum read resistance values, representing binary "0" and "1" signals respectively. The above characteristics can be used as binary neural network synapses for binary information storage, weight modulation, and in-memory computing based on Kirchhoff's laws.

[0054] Furthermore, different spin directions have proportions between the maximum charge and the minimum charge, showing different conductivity values, and when a read voltage is applied, a multi-value in-memory multiplication and addition operation is realized. Figure 4 cd represents the multi-valued realization, the spin direction of the magnetization layer and the charge density of the two-dimensional electron region. In the scenario where multi-valued weights are required, the spin-orbit moment current can be used to locally switch the magnetization direction of the magnetic layer to generate spin-up and spin-down magnetic domains with different specific weights in the magnetization layer. During the reading process, the injection of spin currents with different polarization directions will cause the two-dimensional electron gas density to be at the maximum value ( Figure 4 b) and minimum value ( Figure 4 e) between the two, showing an intermediate resistance value, such as Figure 4 c and 4d. In these four types of spin electron distribution, the device conductance can be expressed as σ1, σ2, σ3 and σ4, respectively, to achieve the weight adjustment of binary or multi-valued synapses. It is worth noting that the number of multi-valued resistance states is not limited to the four shown above, but N resistance states can be realized through the design of multi-valued regions, where N ≥ 4.

[0055] In the above embodiments, it should be understood that the processor may be a central processing unit (CPU), or other general-purpose processors, digital signal processors (DSP), application-specific integrated circuits (ASIC), etc. The general-purpose processor may be a microprocessor or any conventional processor. The steps of the method disclosed in the invention may be directly implemented as being executed by a hardware processor, or may be executed by a combination of hardware and software modules in the processor.

[0056] The memory may include a high-speed memory (Random Access Memory, RAM), and may also include a non-volatile memory (Non-volatile Memory, NVM), such as at least one disk memory.

[0057] The bus may be an Industry Standard Architecture (ISA) bus, a Peripheral Component Interconnect (PCI) bus, or an Extended Industry Standard Architecture (EISA) bus, etc. The bus may be divided into an address bus, a data bus, a control bus, etc. For ease of representation, the bus in the drawings of the present application is not limited to only one bus or one type of bus.

[0058] The present application also provides a computer program product, including a computer program, which implements the above method when executed by a processor.

[0059] The present application also provides a computer-readable storage medium, in which computer-executable instructions are stored. When a processor executes the computer-executable instructions, the above method is implemented.

[0060] The above-mentioned readable storage medium can be implemented by any type of volatile or non-volatile storage device or a combination thereof, such as static random access memory (SRAM), electrically erasable programmable read-only memory (EEPROM), erasable programmable read-only memory (EPROM), programmable read-only memory (PROM), read-only memory (ROM), magnetic memory, flash memory, magnetic disk or optical disk. The readable storage medium can be any available medium that can be accessed by a general or special-purpose computer.

[0061] An exemplary readable storage medium is coupled to a processor so that the processor can read information from the readable storage medium and write information to the readable storage medium. Of course, the readable storage medium can also be a component of the processor. The processor and the readable storage medium can be located in an application specific integrated circuit (Application Specific Integrated Circuits, referred to as: ASIC). Of course, the processor and the readable storage medium can also exist in the device as discrete components.

[0062] The division of units is only a logical function division, and there may be other divisions in actual implementation, such as multiple units or components can be combined or integrated into another system, or some features can be ignored or not executed. Another point is that the mutual coupling or direct coupling or communication connection shown or discussed can be an indirect coupling or communication connection through some interface, device or unit, which can be electrical, mechanical or other forms.

[0063] The units described as separate components may or may not be physically separated, and the components shown as units may or may not be physical units, that is, they may be located in one place or distributed on multiple network units. Some or all of the units may be selected according to actual needs to achieve the purpose of the solution of this embodiment.

[0064] In addition, each functional unit in each embodiment of the present invention may be integrated into one processing unit, or each unit may exist physically separately, or two or more units may be integrated into one unit.

[0065] If the function is implemented in the form of a software functional unit and sold or used as an independent product, it can be stored in a computer-readable storage medium. According to this understanding, the technical solution of the present invention, or the part that contributes to the prior art, or the part of the technical solution, can be embodied in the form of a software product. The computer software product is stored in a storage medium, including several instructions for a computer device (which can be a personal computer, a server, or a network device, etc.) to perform all or part of the steps of the methods of each embodiment of the present invention. The aforementioned storage medium includes: U disk, mobile hard disk, read-only memory (ROM, Read-Only Memory), random access memory (RAM, Random Access Memory), disk or optical disk, etc. Various media that can store program codes.

[0066] Those skilled in the art can understand that all or part of the steps of implementing the above-mentioned method embodiments can be completed by hardware related to program instructions. The aforementioned program can be stored in a computer-readable storage medium. When the program is executed, the steps of the above-mentioned method embodiments are executed; and the aforementioned storage medium includes: ROM, RAM, disk or optical disk and other media that can store program codes.

[0067] Finally, it should be noted that those skilled in the art will readily conceive of other embodiments of the present invention after considering the specification and practicing the invention disclosed herein. The present invention is intended to cover any variations, uses or adaptations of the present invention, which follow the general principles of the present invention and include common knowledge or customary technical means in the art not disclosed by the present invention, are not limited to the precise structure described above and shown in the drawings, and may be modified and changed in various ways without departing from the scope thereof. The scope of the present invention is limited only by the appended claims.

Claims

1. A spin synapse device, characterized in that: include: substrate; and, a bottom electrode layer, a complex oxide system layer, a magnetic storage layer and a top electrode layer are sequentially formed on the substrate from bottom to top, the magnetic storage layer is connected to a conductive structure layer, and the magnetic storage layer is connected to a peripheral circuit through the top electrode layer and the conductive structure layer; There is a two-dimensional electron gas region at the interface of the complex oxide system layer. When the magnetic storage layer receives the read and write voltages of the peripheral circuit, the magnetic storage layer is used to generate a spin current. The spin current is injected into the complex oxide system layer to change the two-dimensional electron gas density of the two-dimensional electron gas region, so that the magnetic storage layer completes the reading or writing of data.

2. The spin synapse device according to claim 1, characterized in that The magnetic storage layer includes a heavy metal layer and a magnetic layer sequentially formed from bottom to top on the complex oxide system layer, wherein the heavy metal layer extends in opposite first and second directions and exceeds boundaries of the magnetic layer in the first and second directions.

3. The spin synapse device according to claim 2, characterized in that: The conductive structure layer includes a first conductive layer and a second conductive layer. The first conductive layer is connected to a portion of the heavy metal layer that exceeds the complex oxide system layer in the first direction. The second conductive layer is connected to a portion of the heavy metal layer that exceeds the complex oxide system layer in the first direction.

4. The spin synapse device according to claim 3, characterized in that The magnetic storage layer is used to generate spin currents with different polarization directions to write data; the spin current generated by the magnetic storage layer enters the magnetic layer and is injected into the complex oxide system layer to change the two-dimensional electron gas density to read data.

5. The spin synapse device according to claim 4, characterized in that: During the reading or writing process of the spin synapse device, a write voltage is applied to the bottom electrode layer, a top auxiliary voltage is applied to the top electrode layer, the first conductive layer and the second conductive layer are grounded, and the charge flow is injected into the heavy metal layer and converted into the spin current through the spin-orbit coupling effect. While entering the magnetic layer, the spin current is also injected into the complex oxide system layer, thereby changing the two-dimensional electron gas density.

6. The spin synapse device according to claim 5, characterized in that The magnetic layer is a magnetic tunnel junction, wherein during the writing process of the magnetic storage layer, the top auxiliary voltage realizes the external field-free spin-orbit moment reversal of the ferromagnetic material in the magnetic layer through the spin transfer torque of the spin current, and injects the spin current into the two-dimensional electron gas region, thereby changing the conductivity between the bottom electrode layer and the first conductive layer.

7. The spin synapse device according to claim 5, characterized in that During the reading process of the magnetic storage layer, the bottom electrode layer is grounded, the top auxiliary voltage is applied, the spin current is injected into the two-dimensional electron gas region, the two-dimensional electron gas density is changed, and the resistance between the bottom electrode layer and the first conductive layer is read, and the resistance is used to indicate the read information.

8. The spin synapse device according to any one of claims 1 to 7, characterized in that: The complex oxide system layer includes one or more complex oxides.

9. An in-memory computing device, characterized in that: The spin synapse device according to any one of claims 1 to 8 is used to perform binary or multi-value in-memory computing.

10. The in-memory computing device according to claim 9, characterized in that: During the in-memory computing weight modulation process, the spin-orbit moment current of the magnetic storage layer drives the magnetic domain to move, the spin direction ratio of the magnetic storage layer changes, and different weights are linearly set; When the in-memory computing device is reading in-memory computing data, different spin directions have proportions between the maximum charge and the minimum charge, showing different conductivity values, and when a read voltage is applied, an in-memory multiplication and addition operation is realized.

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