Quantum dot color conversion film resistant to high blue light radiation and high temperature and preparation method thereof
By growing a ZnS shell on the surface of Zn-In/La-S quantum dots and coating it with a polydopamine layer, and then coating ZnCNi3 with graphene oxide, a quantum dot color conversion film with high blue light radiation resistance and high temperature resistance was prepared. This solved the problem of insufficient resistance to high blue light radiation and high temperature resistance in the existing technology, and achieved a high efficiency improvement in optical performance and stability.
Patent Information
- Application Number
- CN202411932884.4
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2024-12-26
- Publication Date
- 2026-01-13
- Estimated Expiration
- 2044-12-26
AI Technical Summary
Existing quantum dot color conversion films with high blue light radiation resistance and high temperature resistance have shortcomings in terms of high blue light radiation resistance and high temperature resistance, which limits their application.
By preparing Zn-In/La-S quantum dots and growing a ZnS shell on their surface, coating them with a polydopamine layer, and then mixing them with ZnCNi3 coated with graphene oxide, the mixture is uniformly spin-coated onto a polycarbonate film to form a quantum dot color conversion film that is resistant to high blue light radiation and high temperature.
It significantly improves the luminescence intensity and stability of quantum dots, enhances the blocking efficiency of ultraviolet and blue light, and has good heat resistance and chemical stability, making it suitable for water and oxygen environments.
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Abstract
Description
TECHNICAL FIELD
[0001] The present application relates to the technical field of color conversion film, and particularly relates to a quantum dot color conversion film resistant to high blue light radiation and high temperature and a preparation method thereof. BACKGROUND
[0002] The fluorescent quantum dot color conversion film resistant to high blue light radiation and high temperature is a special material which can convert light of a specific wavelength into light of other wavelengths, and is usually used to improve light efficiency and change the spectral distribution of light. The organic / inorganic composite quantum dot color conversion film resistant to high blue light radiation and high temperature is prepared by uniformly dispersing organic fluorescent pigments and inorganic fluorescent powders into a specific matrix in a certain proportion. For example, the organic fluorescent pigment VQ-D25 and the inorganic fluorescent powder yttrium aluminum garnet (YAG) can be uniformly dispersed into PMMA to form the fluorescent quantum dot color conversion film resistant to high blue light radiation and high temperature through coating and curing.
[0003] A preparation method of a fluorescent quantum dot color conversion film resistant to high blue light radiation and high temperature involves mixing a rare earth compound, urea and water to obtain a rare earth source solution, and then preparing the fluorescent quantum dot color conversion film resistant to high blue light radiation and high temperature through steps such as homogeneous precipitation and heat treatment. The method uses rare earth elements and urea to first prepare a precursor film through a hydrothermal method, and then prepares the fluorescent quantum dot color conversion film resistant to high blue light radiation and high temperature through heat treatment, which is simple in steps, convenient to operate and short in preparation period. However, the fluorescent quantum dot color conversion film resistant to high blue light radiation and high temperature does not have the properties of resistance to high blue light radiation and high temperature, which greatly limits its application. SUMMARY
[0004] The present application aims to provide a quantum dot color conversion film resistant to high blue light radiation and high temperature and a preparation method thereof, which has good properties of resistance to high blue light radiation and high temperature, high blocking efficiency for ultraviolet light and blue light, low cost, good heat resistance and chemical stability, can resist water and oxygen environment, and has a wide application prospect.
[0005] The technical solution of the present application is implemented as follows:
[0006] The present application provides a preparation method of a quantum dot color conversion film resistant to high blue light radiation and high temperature. Zn-In / La-S quantum dots are prepared, a polydopamine layer is coated on the surface of the Zn-In / La-S quantum dots after the growth of a ZnS shell, modified Zn-In / La-S quantum dots with a ZnS shell are prepared, the modified Zn-In / La-S quantum dots are mixed with graphene oxide coated ZnCNi3 in a solvent, and the mixture is uniformly spin-coated on a polycarbonate film. The other side is also treated in the same way, and then dried to obtain the quantum dot color conversion film resistant to high blue light radiation and high temperature.
[0007] As a further improvement of the present application, the following steps are included:
[0008] S1. Preparation of Zn-In / La-S quantum dots: zinc acetate, indium acetate, lanthanum acetate, sulfur powder, oleylamine, mercaptan were mixed, and heated under inert gas protection to prepare a Zn-In / La-S quantum dot reaction solution;
[0009] S2. Coating of ZnS shell: zinc acetate was dissolved in oleylamine and octadecene solution, and then added to the Zn-In / La-S quantum dot reaction solution prepared in step S1, and heated to prepare Zn-In / La-S quantum dots coated with a ZnS shell.
[0010] S3. Coating of polydopamine layer: the Zn-In / La-S quantum dots coated with a ZnS shell were added to water, and then dopamine hydrochloride and a catalyst were added, and heated and stirred to prepare modified Zn-In / La-S quantum dots coated with a ZnS shell.
[0011] S4. Preparation of ZnCNi3: ZnO and NiO were mixed, melamine was added, and stirred and mixed uniformly, and then calcined to prepare ZnCNi3.
[0012] S5. Coating of graphene oxide: graphene oxide was added to water, and then ZnCNi3 was added, and ultrasonically dispersed uniformly, and then spray dried to prepare graphene oxide coated ZnCNi3.
[0013] S6. Preparation of suspension: the modified Zn-In / La-S quantum dots coated with a ZnS shell and the graphene oxide coated ZnCNi3 were added to a solvent, and stirred and mixed uniformly to prepare a suspension.
[0014] S7. Preparation of quantum dot color conversion film resistant to high blue light radiation and high temperature: the suspension was uniformly spin-coated on a polycarbonate film, and the other side was also treated in the same way, and then dried to prepare a quantum dot color conversion film resistant to high blue light radiation and high temperature.
[0015] As a further improvement of the present application, the mass ratio of zinc acetate, indium acetate, lanthanum acetate, sulfur powder, oleylamine, and mercaptan in step S1 is 3-4:5-7:2-3:6-8:400-700:300-500, and the temperature of the heating reaction is 220-240℃, and the time is 10-15min.
[0016] As a further improvement of the present application, the mass ratio of zinc acetate, oleylamine, and octadecene solution, and Zn-In / La-S quantum dot reaction solution in step S2 is 7-10:100:1000-1200, and the temperature of the heating reaction is 240-250℃, and the time is 20-30min.
[0017] As a further improvement of the present application, the mass ratio of the Zn-In / La-S quantum dots with the coated ZnS shell, dopamine hydrochloride and the catalyst in step S3 is 10:2-3:0.1-0.2, the Tris-HCl solution of the catalyst has a pH of 8.5-9.5, the temperature of the heated stirring reaction is 35-45℃, and the time is 3-5h.
[0018] As a further improvement of the present application, the molar ratio of the ZnO, NiO and melamine in step S4 is 1:2-4:4-6, the calcination temperature is 550-650℃, and the time is 10-14h.
[0019] As a further improvement of the present application, the mass ratio of the graphene oxide and ZnCNi3 in step S5 is 3-5:10.
[0020] As a further improvement of the present application, the mass ratio of the modified Zn-In / La-S quantum dots with the coated ZnS shell, graphene oxide coated ZnCNi3 and the solvent in step S6 is 7-10:3-5:100-200, and the solvent is at least one of n-octane, n-hexane, cyclohexane and petroleum ether.
[0021] As a further improvement of the present application, the rotation speed of the spin coating in step S7 is 2500-3500r / min, and the time is 40-50s.
[0022] The present application further protects a quantum dot color conversion film with high blue light radiation resistance and high temperature resistance prepared by the above preparation method.
[0023] The present application has the following beneficial effects:
[0024] Quantum dots are favored in wide color gamut display due to their high luminous efficiency and narrow linewidth. However, they are easily affected by water, heat and oxygen, resulting in a decrease in luminous efficiency. The present application grows a ZnS shell layer on the surface of Zn-In / La-S quantum dots, improves the luminous intensity of the quantum dots, significantly improves the heat and oxygen resistance of the quantum dots, effectively protects the core quantum dots from the erosion of the external environment, significantly improves the stability of the quantum dots, and significantly enhances the luminous efficiency of the quantum dots through the effective limitation of the shell material on the photo-generated carriers.
[0025] The quantum dots are doped with indium and lanthanum elements, the doping of lanthanum elements can improve the fluorescence performance and thermal stability, because of the larger stokes shift, the self-absorption caused by self-quenching phenomenon can be well avoided, and the thermal stability, chemical stability and longer fluorescence lifetime of the quantum dots are greatly improved. The doping of indium elements can significantly reduce the disorder in the organic semiconductor layer, and can obviously affect the structure, morphology and size of the quantum dots, so that the size of the quantum dots is obviously reduced, and the ultraviolet and blue light blocking efficiency is better. The quantum dots prepared by the two have better temperature resistance, blue light blocking, thermal stability and chemical stability, and have a synergistic effect.
[0026] The Zn-In / La-S quantum dots with ZnS shell prepared in the application are further coated with a layer of polydopamine layer, which further improves the chemical stability and fluorescence stability of the quantum dots, reduces the transmission potential barrier between the quantum dots, improves the carrier mobility, enhances the optical performance of the quantum dots, and improves the adhesion of the quantum dots and graphene oxide coated ZnCNi3 and the adhesion on the polycarbonate film.
[0027] ZnCNi3 has an inverted perovskite structure, has the advantages of low cost and good heat resistance and stability, and after graphene oxide spray drying coating, a multi-ple fold structure is formed on the surface, which avoids the agglomeration between the quantum dots and graphene oxide coated ZnCNi3, increases the specific surface area, and further improves the ultraviolet and blue light blocking efficiency and has better temperature resistance.
[0028] The application prepares a quantum dot color conversion film which has good high blue light radiation resistance and high temperature resistance, high ultraviolet and blue light blocking efficiency, low cost, good heat resistance and chemical stability, can resist water and oxygen environment, and has a wide application prospect. DETAILED DESCRIPTION
[0029] The technical solutions in the embodiments of the application will be described clearly and completely below. Obviously, the described embodiments are only part of the embodiments of the application, not all the embodiments. Based on the embodiments in the application, all other embodiments obtained by those skilled in the art without creative labor are within the protection scope of the application.
[0030] Embodiment 1
[0031] The embodiment provides a preparation method of a quantum dot color conversion film with high blue light radiation resistance and high temperature resistance, comprising the following steps:
[0032] S1. Preparation of Zn-In / La-S quantum dots: 0.3 g of zinc acetate, 0.5 g of indium acetate, 0.2 g of lanthanum acetate and 0.6 g of sulfur powder, 40 g of oleylamine and 30 g of mercaptan were mixed, heated to 220°C under nitrogen protection, and reacted for 10 min. The reaction solution was cooled to room temperature to obtain a Zn-In / La-S quantum dot reaction solution;
[0033] S2. Coating of ZnS shell: 0.7 g of zinc acetate was dissolved in 10 g of oleylamine and octadecene solution, and then added to 100 g of the Zn-In / La-S quantum dot reaction solution prepared in step S1. The mixture was heated to 240°C and reacted for 20 min. The reaction solution was cooled to room temperature and purified with methanol for 3 times. The product was centrifuged to obtain Zn-In / La-S quantum dots coated with a ZnS shell;
[0034] S3. Coating of polydopamine layer: 1 g of Zn-In / La-S quantum dots coated with a ZnS shell was added to 50 mL of water, and 0.2 g of dopamine hydrochloride and 0.01 g of catalyst were added. The mixture was heated to 35°C and stirred for 3 h. The product was centrifuged, washed and dried to obtain modified Zn-In / La-S quantum dots coated with a ZnS shell;
[0035] The catalyst was a Tris-HCl solution with a pH of 8.5;
[0036] S4. Preparation of ZnCNi3: 1 mmol of ZnO and 2 mmol of NiO were mixed, 4 mmol of melamine was added, and the mixture was stirred for 15 min and calcined at 550°C for 10 h to obtain ZnCNi3;
[0037] S5. Coating of graphene oxide: 0.3 g of graphene oxide was added to 50 mL of water, 1 g of ZnCNi3 was added, and the mixture was ultrasonically dispersed at 1000 W for 15 min. The product was spray dried to obtain graphene oxide coated ZnCNi3;
[0038] S6. Preparation of suspension: 0.7 g of modified Zn-In / La-S quantum dots coated with a ZnS shell and 0.3 g of graphene oxide coated ZnCNi3 were added to 10 mL of n-octane and stirred for 15 min to obtain a suspension;
[0039] S7. Preparation of quantum dot color conversion film resistant to high blue light radiation and high temperature: The suspension was spin-coated on a polycarbonate film at a speed of 2500 r / min for 40 s, and the other side was treated in the same way. The product was dried to obtain a quantum dot color conversion film resistant to high blue light radiation and high temperature.
[0040] Example 2
[0041] The present embodiment provides a method for preparing a quantum dot color conversion film resistant to high blue light radiation and high temperature, comprising the following steps:
[0042] S1. Preparation of Zn-In / La-S quantum dots: 0.4 g of zinc acetate, 0.7 g of indium acetate, 0.3 g of lanthanum acetate and 0.8 g of sulfur powder, 70 g of oleylamine, 50 g of mercaptan were mixed, heated to 240℃ under nitrogen protection, reacted for 15 min, and cooled to room temperature to prepare a Zn-In / La-S quantum dot reaction solution;
[0043] S2. Coating of ZnS shell: 1 g of zinc acetate was dissolved in 10 g of oleylamine and octadecene solution, added to 120 g of the Zn-In / La-S quantum dot reaction solution described in step S1, heated to 250℃, reacted for 30 min, cooled to room temperature, purified with methanol for 3 times, centrifuged, and Zn-In / La-S quantum dots coated with ZnS shell were prepared;
[0044] S3. Coating of polydopamine layer: 1 g of Zn-In / La-S quantum dots coated with ZnS shell was added to 50 mL of water, 0.3 g of dopamine hydrochloride and 0.02 g of catalyst were added, heated to 45℃, stirred for 5 h, centrifuged, washed, dried, and modified Zn-In / La-S quantum dots coated with ZnS shell were prepared;
[0045] The catalyst is a Tris-HCl solution with pH = 9.5;
[0046] S4. Preparation of ZnCNi3: 1 mmol of ZnO and 4 mmol of NiO were mixed, 6 mmol of melamine was added, stirred and mixed for 15 min, calcined at 650℃ for 14 h, and ZnCNi3 was prepared;
[0047] S5. Coating of graphene oxide: 0.5 g of graphene oxide was added to 50 mL of water, 1 g of ZnCNi3 was added, ultrasonically dispersed at 1000 W for 15 min, and spray dried to prepare ZnCNi3 coated with graphene oxide;
[0048] S6. Preparation of suspension: 1 g of modified Zn-In / La-S quantum dots coated with ZnS shell and 0.5 g of ZnCNi3 coated with graphene oxide were added to 20 mL of n-octane, stirred and mixed for 15 min, and a suspension was prepared;
[0049] S7. Preparation of quantum dot color conversion film resistant to high blue light radiation and high temperature: the suspension was spin-coated on a polycarbonate film at a rotation speed of 3500 r / min for 50 s, the other side was treated in the same way, and dried to prepare a quantum dot color conversion film resistant to high blue light radiation and high temperature.
[0050] Example 3
[0051] The embodiment provides a preparation method of a quantum dot color conversion film resistant to high blue light radiation and high temperature, comprising the following steps:
[0052] S1. Preparation of Zn-In / La-S quantum dots: 0.37 g of zinc acetate, 0.6 g of indium acetate, 0.24 g of lanthanum acetate and 0.7 g of sulfur powder, 50 g of oleylamine, 40 g of mercaptan were mixed, heated to 230°C under nitrogen protection, reacted for 12 min, and cooled to room temperature to prepare a Zn-In / La-S quantum dot reaction solution;
[0053] S2. Coating of ZnS shell: 0.8 g of zinc acetate was dissolved in 10 g of oleylamine and octadecene solution, added to 110 g of the Zn-In / La-S quantum dot reaction solution described in step S1, heated to 245°C, reacted for 25 min, cooled to room temperature, purified with methanol for 3 times, centrifuged, and Zn-In / La-S quantum dots coated with ZnS shell were prepared;
[0054] S3. Coating of polydopamine layer: 1 g of Zn-In / La-S quantum dots coated with ZnS shell was added to 50 mL of water, 0.25 g of dopamine hydrochloride and 0.015 g of catalyst were added, heated to 40°C, stirred for 4 h, centrifuged, washed, dried, and modified Zn-In / La-S quantum dots coated with ZnS shell were prepared;
[0055] The Tris-HCl solution of the catalyst has a pH of 9;
[0056] S4. Preparation of ZnCNi3: 1 mmol of ZnO and 3 mmol of NiO were mixed, 5 mmol of melamine was added, stirred and mixed for 15 min, calcined at 600°C for 12 h, and ZnCNi3 was prepared;
[0057] S5. Coating of graphene oxide: 0.4 g of graphene oxide was added to 50 mL of water, 1 g of ZnCNi3 was added, ultrasonically dispersed at 1000 W for 15 min, and spray dried to prepare graphene oxide coated ZnCNi3;
[0058] S6. Preparation of suspension: 0.85 g of modified Zn-In / La-S quantum dots coated with ZnS shell and 0.4 g of graphene oxide coated ZnCNi3 were added to 15 mL of n-octane, stirred and mixed for 15 min, and a suspension was prepared;
[0059] S7. Preparation of quantum dot color conversion film resistant to high blue light radiation and high temperature: the suspension was spin-coated on a polycarbonate film at a speed of 3000 r / min for 45 s, the other side was treated in the same way, and dried to prepare a quantum dot color conversion film resistant to high blue light radiation and high temperature.
[0060] Comparative Example 1
[0061] Compared with Example 3, the difference is that no indium acetate is added in step S1.
[0062] Specifically as follows:
[0063] S1. Preparation of Zn-La-S quantum dots: 0.37 g of zinc acetate, 84 g of lanthanum acetate and 0.7 g of sulfur powder, 50 g of oleylamine and 40 g of mercaptan were mixed, heated to 230°C under nitrogen protection, reacted for 12 min, and cooled to room temperature to prepare a Zn-La-S quantum dot reaction solution.
[0064] Comparative Example 2
[0065] Compared with Example 3, the difference is that no lanthanum acetate is added in step S1.
[0066] Specifically as follows:
[0067] S1. Preparation of Zn-In-S quantum dots: 0.37 g of zinc acetate, 0.84 g of indium acetate and 0.7 g of sulfur powder, 50 g of oleylamine and 40 g of mercaptan were mixed, heated to 230°C under nitrogen protection, reacted for 12 min, and cooled to room temperature to prepare a Zn-In-S quantum dot reaction solution.
[0068] Comparative Example 3
[0069] Compared with Example 3, the difference is that no indium acetate and lanthanum acetate are added in step S1.
[0070] Specifically as follows:
[0071] S1. Preparation of ZnS quantum dots: 0.37 g of zinc acetate and 0.7 g of sulfur powder, 50 g of oleylamine and 40 g of mercaptan were mixed, heated to 230°C under nitrogen protection, reacted for 12 min, and cooled to room temperature to prepare a ZnS quantum dot reaction solution.
[0072] Comparative Example 4
[0073] Compared with Example 3, the difference is that step S2 is not performed.
[0074] Specifically as follows:
[0075] S1. Preparation of Zn-In / La-S quantum dots: 0.37 g of zinc acetate, 0.6 g of indium acetate, 0.24 g of lanthanum acetate and 0.7 g of sulfur powder, 50 g of oleylamine and 40 g of mercaptan were mixed, heated to 230°C under nitrogen protection, reacted for 12 min, and cooled to room temperature, centrifuged, washed, and freeze-dried to prepare Zn-In / La-S quantum dots.
[0076] S2. Coating a polydopamine layer: 1 g of Zn-In / La-S quantum dots was added to 50 mL of water, 0.25 g of dopamine hydrochloride and 0.015 g of catalyst were added, heated to 40°C, stirred for 4 h, centrifuged, washed, and dried to prepare modified Zn-In / La-S quantum dots.
[0077] The catalyst is a Tris-HCl solution with a pH of 9;
[0078] Preparation of S3.ZnCNi3: 1 mmol ZnO and 3 mmol NiO were mixed, 5 mmol melamine was added, the mixture was stirred for 15 min, and calcined at 600℃ for 12 h to obtain ZnCNi3.
[0079] S4. Coating with graphene oxide: 0.4g of graphene oxide was added to 50mL of water, 1g of ZnCNi3 was added, ultrasonically dispersed at 1000W for 15min, and spray-dried to obtain graphene oxide coated with ZnCNi3.
[0080] S5. Preparation of suspension: 0.85g of modified Zn-In / La-S quantum dots and 0.4g of graphene oxide-coated ZnCNi3 were added to 15mL of n-octane and stirred for 15min to obtain a suspension.
[0081] S6. Preparation of quantum dot color conversion film resistant to high blue light radiation and high temperature: The suspension was spin-coated onto a polycarbonate film at a speed of 3000 r / min for 45 s. The other side was treated in the same way and dried to obtain a quantum dot color conversion film resistant to high blue light radiation and high temperature.
[0082] Comparative Example 5
[0083] The difference from Example 3 is that step S3 was not performed.
[0084] Specifically as follows:
[0085] Preparation of S1. Zn-In / La-S quantum dots: 0.37 g zinc acetate, 0.6 g indium acetate, 0.24 g lanthanum acetate, 0.7 g sulfur powder, 50 g oleylamine, and 40 g thiol were mixed and heated to 230 °C under nitrogen protection for 12 min. The mixture was then cooled to room temperature to obtain a Zn-In / La-S quantum dot reaction solution.
[0086] S2. Coating with ZnS shell: Dissolve 0.8g of zinc acetate in 10g of oleylamine and octadecene solution, add to 110g of the Zn-In / La-S quantum dot reaction solution described in step S1, heat to 245℃, react for 25min, cool to room temperature, purify with methanol 3 times, centrifuge to obtain Zn-In / La-S quantum dots coated with ZnS shell;
[0087] Preparation of S3.ZnCNi3: 1 mmol ZnO and 3 mmol NiO were mixed, 5 mmol melamine was added, the mixture was stirred for 15 min, and calcined at 600℃ for 12 h to obtain ZnCNi3.
[0088] S4. Coating with graphene oxide: 0.4g of graphene oxide was added to 50mL of water, 1g of ZnCNi3 was added, ultrasonically dispersed at 1000W for 15min, and spray-dried to obtain graphene oxide coated with ZnCNi3.
[0089] S5. Preparation of suspension: 0.85g of Zn-In / La-S quantum dots coated with ZnS shell and 0.4g of ZnCNi3 coated with graphene oxide were added to 15mL of n-octane and stirred for 15min to obtain a suspension.
[0090] S6. Preparation of quantum dot color conversion film resistant to high blue light radiation and high temperature: The suspension was spin-coated onto a polycarbonate film at a speed of 3000 r / min for 45 s. The other side was treated in the same way and dried to obtain a quantum dot color conversion film resistant to high blue light radiation and high temperature.
[0091] Comparative Example 6
[0092] The difference from Example 3 is that step S5 was not performed.
[0093] Specifically as follows:
[0094] Preparation of S1. Zn-In / La-S quantum dots: 0.37 g zinc acetate, 0.6 g indium acetate, 0.24 g lanthanum acetate, 0.7 g sulfur powder, 50 g oleylamine, and 40 g thiol were mixed and heated to 230 °C under nitrogen protection for 12 min. The mixture was then cooled to room temperature to obtain a Zn-In / La-S quantum dot reaction solution.
[0095] S2. Coating with ZnS shell: Dissolve 0.8g of zinc acetate in 10g of oleylamine and octadecene solution, add to 110g of the Zn-In / La-S quantum dot reaction solution described in step S1, heat to 245℃, react for 25min, cool to room temperature, purify with methanol 3 times, centrifuge to obtain Zn-In / La-S quantum dots coated with ZnS shell;
[0096] S3. Coating with polydopamine layer: 1g of Zn-In / La-S quantum dots coated with ZnS shell were added to 50mL of water, along with 0.25g of dopamine hydrochloride and 0.015g of catalyst. The mixture was heated to 40℃ and stirred for 4h. After centrifugation, washing, and drying, modified Zn-In / La-S quantum dots coated with ZnS shell were obtained.
[0097] The catalyst is a Tris-HCl solution with a pH of 9;
[0098] Preparation of S4.ZnCNi3: 1 mmol ZnO and 3 mmol NiO were mixed, 5 mmol melamine was added, the mixture was stirred for 15 min, and calcined at 600℃ for 12 h to obtain ZnCNi3.
[0099] S5. Preparation of suspension: 0.85g of modified Zn-In / La-S quantum dots with ZnS shell and 0.4g of ZnCNi3 were added to 15mL of n-octane and stirred for 15min to obtain a suspension.
[0100] S6. Preparation of quantum dot color conversion film resistant to high blue light radiation and high temperature: The suspension was spin-coated onto a polycarbonate film at a speed of 3000 r / min for 45 s. The other side was treated in the same way and dried to obtain a quantum dot color conversion film resistant to high blue light radiation and high temperature.
[0101] Comparative Example 7
[0102] The difference from Example 3 is that ZnCNi3 was not coated with graphene oxide in step S6.
[0103] Specifically as follows:
[0104] S6. Preparation of suspension: 1.25g of modified Zn-In / La-S quantum dots coated with ZnS shell were added to 15mL of n-octane and stirred for 15min to obtain a suspension.
[0105] Test Example 1
[0106] The quantum dot color conversion films with high blue light radiation resistance and high temperature resistance prepared in Examples 1-3 and Comparative Examples 1-7 were structurally assembled, and from top to bottom, they were: PET cover film, adhesive layer (thickness 21.4 μm), quantum dot color conversion film with high blue light radiation resistance and high temperature resistance prepared in Examples 1-3 or Comparative Examples 1-7, and substrate PET film. Performance tests were performed, and the results are shown in Table 1.
[0107] (1) Measurement of fog
[0108] The turbidity of the membrane is measured using an HM-150 instrument. Light emitted from the lamp penetrates the sample and is incident on the integrating sphere. In this case, the light is split into diffuse (DT) and parallel (PT) light by the sample, and these lights are reflected in the integrating sphere and then focused in the light receiving device. The focused light is transferred to the measurement unit, and the required measurement data is output to the display.
[0109] (2) Measurement of brightness and quantum yield (QY)
[0110] The luminance and quantum yield of the fabricated high blue light emission and high temperature resistant quantum dot color conversion film were calculated by measuring the luminance spectrum using a spectroradiometer. A light guide plate, comprising a backlight unit including a red LED (maximum emission wavelength of 620 nm) and a light guide plate, was stacked on one surface of the fabricated high blue light emission and high temperature resistant quantum dot color conversion film. A prism sheet and a dual brightness enhancement film (DBEF) were stacked on the other surface of the film, and then the luminance spectrum of the film was measured. Initial values were set such that the luminance of the red LED was 600 nits in the absence of the high blue light emission and high temperature resistant quantum dot color conversion film when measuring the luminance spectrum.
[0111] Table 1
[0112]
[0113] As can be seen from the table above, the quantum dot color conversion films that are resistant to high blue light radiation and high temperature prepared in Examples 1-3 of the present invention have high brightness and quantum yield.
[0114] Test Example 2
[0115] The high blue light radiation resistant and high temperature resistant quantum dot color conversion films prepared in Examples 1-3 and Comparative Examples 1-7 were structurally assembled, from top to bottom as follows: PET cover film, adhesive layer (thickness 21.4 μm), the high blue light radiation resistant and high temperature resistant quantum dot color conversion film prepared in Examples 1-3 or Comparative Examples 1-7, and substrate PET film, and performance tests were performed. A light guide plate including a backlight unit with dual blue light wavelength LEDs (blue light wavelength of 440 nm and blue-violet wavelength of 500 nm) and a light guide plate was stacked on one surface of the prepared high blue light radiation resistant and high temperature resistant quantum dot color conversion film. A prism sheet and a dual brightness enhancement film (DBEF) were stacked on the other surface of the high blue light radiation resistant and high temperature resistant quantum dot color conversion film, and then the brightness spectrum of the film was measured. The emission intensity of the blue light peak at a test current of 40 mA was measured. An initial value was set such that, when measuring the brightness spectrum, the ratio of the emission intensity of the blue peak to the blue-violet peak of the LED lamp was 4.45 in the absence of a quantum dot color conversion film resistant to high blue light radiation and high temperature. The results are shown in Table 2.
[0116] Table 2
[0117] Group Ratio of emission intensity of blue light peak to blue-violet light peak Example 1 0.87 Example 2 0.85 Example 3 0.82 Comparative Example 1 2.42 Comparative Example 2 1.17 Comparative Example 3 2.98 Comparative Example 4 1.85 Comparative Example 5 1.08 Comparative Example 6 1.98 Comparative Example 7 2.27
[0118] As can be seen from the table above, the quantum dot color conversion films with high blue light radiation resistance and high temperature resistance prepared in Examples 1-3 of the present invention have good blue light blocking effect.
[0119] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention should be included within the protection scope of the present invention.
Claims
1. A method for preparing a quantum dot color conversion film resistant to high blue light radiation and high temperature, characterized in that, Zn-In / La-S quantum dots were prepared by growing a ZnS shell on the surface and then coating it with a polydopamine layer to obtain modified Zn-In / La-S quantum dots with a ZnS shell. These modified quantum dots were then mixed with ZnCNi3 coated with graphene oxide in a solvent and uniformly spin-coated onto a polycarbonate film. The other side was treated in the same way and dried to obtain a quantum dot color conversion film that is resistant to high blue light radiation and high temperature.
2. The preparation method according to claim 1, characterized in that, Includes the following steps: Preparation of S1. Zn-In / La-S quantum dots: Zinc acetate, indium acetate, lanthanum acetate, sulfur powder, oleylamine, and thiol were mixed, heated under inert gas protection, and cooled to room temperature to obtain a Zn-In / La-S quantum dot reaction solution. S2. Coating with ZnS shell: Dissolve zinc acetate in oleylamine and octadecene solution, add it to the Zn-In / La-S quantum dot reaction solution described in step S1, heat to react, cool to room temperature, purify with methanol, centrifuge, and obtain Zn-In / La-S quantum dots coated with ZnS shell; S3. Coating with polydopamine layer: Zn-In / La-S quantum dots coated with ZnS shell are added to water, dopamine hydrochloride and catalyst are added, the mixture is heated and stirred to react, centrifuged, washed and dried to obtain modified Zn-In / La-S quantum dots coated with ZnS shell; Preparation of S4.ZnCNi3: ZnO and NiO are mixed, melamine is added, the mixture is stirred and mixed evenly, and then calcined to obtain ZnCNi3; S5. Graphene oxide coating: Graphene oxide was added to water, ZnCNi3 was added, ultrasonically dispersed evenly, and spray-dried to obtain graphene oxide coated with ZnCNi3. S6. Preparation of suspension: Modified Zn-In / La-S quantum dots coated with ZnS shell and ZnCNi3 coated with graphene oxide are added to solvent and stirred and mixed evenly to obtain suspension; S7. Preparation of quantum dot color conversion film resistant to high blue light radiation and high temperature: The suspension is uniformly spin-coated onto a polycarbonate film, and the other side is treated in the same way and dried to obtain a quantum dot color conversion film resistant to high blue light radiation and high temperature.
3. The preparation method according to claim 2, characterized in that, In step S1, the mass ratio of zinc acetate, indium acetate, lanthanum acetate, sulfur powder, oleylamine, and thiol is 3-4:5-7:2-3:6-8:400-700:300-500, and the heating reaction temperature is 220-240℃ for 10-15 minutes.
4. The preparation method according to claim 2, characterized in that, In step S2, the mass ratio of zinc acetate, oleylamine and octadecene solution, and Zn-In / La-S quantum dot reaction solution is 7-10:100:1000-1200, and the heating reaction temperature is 240-250℃ for 20-30 min.
5. The preparation method according to claim 2, characterized in that, In step S3, the mass ratio of Zn-In / La-S quantum dots coated with ZnS shell, dopamine hydrochloride and catalyst is 10:2-3:0.1-0.
2. The catalyst is a Tris-HCl solution with pH=8.5-9.
5. The heating and stirring reaction is carried out at a temperature of 35-45℃ for 3-5 hours.
6. The preparation method according to claim 2, characterized in that, In step S4, the molar ratio of ZnO, NiO, and melamine is 1:2-4:4-6, and the calcination temperature is 550-650℃ for 10-14 hours.
7. The preparation method according to claim 2, characterized in that, The mass ratio of graphene oxide to ZnCNi3 in step S5 is 3-5:
10.
8. The preparation method according to claim 2, characterized in that, In step S6, the mass ratio of the modified Zn-In / La-S quantum dots coated with ZnS shell, the graphene oxide-coated ZnCNi3, and the solvent is 7-10:3-5:100-200, and the solvent is at least one of n-octane, n-hexane, cyclohexane, and petroleum ether.
9. The preparation method according to claim 2, characterized in that, The spin coating speed in step S7 is 2500-3500 r / min, and the time is 40-50 s.
10. A quantum dot color conversion film resistant to high blue light radiation and high temperature, prepared by the method according to any one of claims 1-9.
Citation Information
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