Levelling membrane core, method for producing and using same, and pressure transmitter

Abstract

The application belongs to the technical field of pressure sensors, and particularly relates to a flush diaphragm core body, a preparation method and application thereof, and a pressure transmitter. The flush diaphragm core body comprises a steel base and a flush diaphragm. The flush diaphragm comprises a composite strain layer. The composite strain layer comprises a first strain layer, a second strain layer, a third strain layer and a fourth strain layer which are sequentially stacked. The layers are cooperatively matched with each other to sense pressure from each direction, thereby improving the strain sensitivity of the flush diaphragm core body. The pressure transmitter provided by the application contains the flush diaphragm core body, has high overload capacity, can maintain stable performance in a harsh working environment, and provides accurate pressure data.

Description

TECHNICAL FIELD

[0001] The application belongs to the technical field of pressure sensors, and particularly relates to a flush diaphragm core body and a preparation method and application thereof, and a pressure transmitter. BACKGROUND

[0002] The flush diaphragm is a necessary element in the pressure transmitter, and the contact surface of the measuring diaphragm and the measured medium is in the same plane without protruding or recessed parts. This design enables the diaphragm to be in direct contact with the measured medium, thereby more accurately transmitting the pressure signal.

[0003] Although the existing flush diaphragm has the advantages of wide pressure measurement range, high accuracy, resistance to electromagnetic interference, etc., it is easily affected by temperature, humidity, mechanical vibration, etc., and has reduced sensitivity and poor stability in high-temperature or corrosive environments, resulting in a decrease in the accuracy of the measurement results. SUMMARY

[0004] To solve the above problems, the application provides a flush diaphragm core body and a preparation method and application thereof, and a pressure transmitter. The flush diaphragm core body comprises four strain layers.

[0005] The application is achieved by the following technical solutions:

[0006] In a first aspect, the application provides a flush diaphragm core body, comprising a steel base and a flush diaphragm.

[0007] The flush diaphragm comprises a composite strain layer.

[0008] The composite strain layer comprises a first strain layer, a second strain layer, a third strain layer and a fourth strain layer stacked in sequence.

[0009] The material of the first strain layer comprises SiGeSnN.

[0010] The material of the second strain layer comprises SiGeSnNiN.

[0011] The material of the third strain layer comprises SiGeSnNiCrInN.

[0012] The material of the fourth strain layer comprises SiGeNiCrInGaN.

[0013] In some possible implementation manners, the material of the first strain layer comprises the following atomic percentage of elements:

[0014] Si: 28%~32%, Ge: 25%~31%, Sn: 30%~35%, N: 5%~10%.

[0015] In some possible implementation manners, the thickness of the first strain layer is 80nm~100nm.

[0016] In some possible implementation manners, the material of the second strain layer comprises the following atomic percentage of elements:

[0017] Si: 27% to 35%, Ge: 28% to 37%, Sn: 18% to 25%, Ni: 15% to 22%, and N: 3% to 8%.

[0018] In some possible implementation manners, the thickness of the second strain layer is 90 nm to 120 nm.

[0019] In some possible implementation manners, the material of the third strain layer comprises the following atomic percentage of elements:

[0020] Si: 19% to 25%, Ge: 21% to 28%, Sn: 23% to 29%, Ni: 17% to 21%, Cr: 8% to 14%, In: 3% to 8%, and N: 1% to 2%.

[0021] In some possible implementation manners, the thickness of the third strain layer is 110 nm to 150 nm.

[0022] In some possible implementation manners, the material of the fourth strain layer comprises the following atomic percentage of elements:

[0023] Si: 23% to 28%, Ge: 13% to 25%, Ni: 15% to 25%, Cr: 18% to 21%, In: 5% to 10%, Ga: 5% to 10%, and N: 2% to 5%.

[0024] In some possible implementation manners, the thickness of the fourth strain layer is 110 nm to 150 nm.

[0025] In some possible implementation manners, the flush film further comprises a transition layer, an insulating layer, a protective layer, and a pad;

[0026] The steel base, the transition layer, the insulating layer, the composite strain layer, and the pad are sequentially arranged in a longitudinal direction.

[0027] The protective layer is arranged on the surface of the transition layer, the insulating layer, and the composite strain layer.

[0028] In a second aspect, the present application provides a preparation method of a flush film core, comprising the following steps:

[0029] A transition layer, an insulating layer, and a composite strain layer are prepared on the surface of the steel base, respectively;

[0030] A pad is fixed on the composite strain layer.

[0031] The protective layer is prepared on the rest of the surface of the transition layer, the insulating layer and the composite strain layer.

[0032] In a third aspect, the application provides a pressure transmitter comprising the flush diaphragm core provided by the application.

[0033] In a fourth aspect, the application provides an application of the flush diaphragm core provided by the application in the field of strain materials.

[0034] The flush diaphragm, the preparation method and the application thereof, and the pressure transmitter provided by the application have at least the following beneficial technical effects compared with the prior art:

[0035] (1) The flush diaphragm core provided by the application, wherein the flush diaphragm has a composite strain layer comprising four strain layers, Si, Ge and Sn are all group IV-A metal elements, and In and Ga are adjacent group III-A metal elements, so that the difference in element types between the layers is small, the bonding strength between the adjacent two layers is high, and the stability of the composite strain layer is improved; the first strain layer, the second strain layer, the third strain layer and the fourth strain layer are mutually coordinated to sense the pressure from each direction, thereby improving the strain sensitivity of the flush diaphragm core.

[0036] (2) In the flush diaphragm core provided by the application, in the composite strain layer, N in each strain layer forms silicon nitride or gallium nitride with silicon or gallium, and the silicon nitride and the gallium nitride have high corrosion resistance, high sensitivity and high stability in a high-temperature or corrosive environment, so that the measurement result is highly accurate.

[0037] (3) The pressure transmitter comprising the flush diaphragm core provided by the application has high overload capacity, can maintain stable performance in a harsh working environment, and provides accurate pressure data. BRIEF DESCRIPTION OF DRAWINGS

[0038] In order to more clearly illustrate the technical solutions in the embodiments of the drawings or the prior art, the drawings needed to be used in the following embodiment or prior art description will be briefly introduced. Obviously, the drawings in the following description are only some embodiments of the drawings, and those skilled in the art can also obtain other drawings according to the structures shown in the drawings without creative labor.

[0039] Figure 1 It is a cross-sectional structure schematic diagram of the flush diaphragm core in the embodiment of the application.

[0040] Figure 2 It is a cross-sectional structure schematic diagram of the composite strain layer in the embodiment of the application.

[0041] Figure 3A schematic diagram of a cross-sectional structure of a flush membrane in an embodiment of the present application;

[0042] Figure 4 A schematic diagram of a flow of a preparation method of a flush membrane core in an embodiment of the present application.

[0043] Explanation of reference signs:

[0044] 1-steel base; 2-flush membrane; 21-transition layer; 22-insulating layer; 23-composite strain layer: 231-first strain layer, 232-second strain layer, 233-third strain layer, 234-fourth strain layer; 24-protection layer; 25-soldering pad.

[0045] The purposes, functional features and advantages of the drawings will be further described with reference to the drawings in conjunction with embodiments. DETAILED DESCRIPTION

[0046] In order to make the purposes, technical solutions and advantages of the present application clearer, the present application will be described and explained below in conjunction with embodiments. It should be understood that the specific embodiments described herein are only used to explain the present application and do not limit the present application. Based on the embodiments provided by the present application, all other embodiments obtained by those of ordinary skill in the art without creative labor fall within the scope of the present application.

[0047] Obviously, the following description is only some examples or embodiments of the present application, and for those of ordinary skill in the art, the present application can also be applied to other similar scenarios without creative labor. In addition, it should be understood that although the efforts made in this development process can be complex and lengthy, for those of ordinary skill in the art related to the disclosed content of the present application, some design, manufacture or production changes based on the technical content disclosed in the present application are only routine technical means and should not be understood as insufficient disclosure of the present application.

[0048] However, there will be cases of omitting unnecessary detailed description. For example, there are cases of omitting detailed description of well-known matters, repeated description of actually identical structures. This is to avoid the following description from becoming unnecessarily lengthy, facilitating understanding by those skilled in the art. In addition, the following description is provided for those skilled in the art to fully understand the present application and is not intended to limit the subject matter recited in the claims.

[0049] If not specifically stated, all embodiments and optional embodiments of the present application can be combined with each other to form new technical solutions, and all technical features and optional technical features of the present application can be combined with each other to form new technical solutions.

[0050] The following is a detailed description of a flush membrane core body, a preparation method and application thereof, and a pressure transmitter according to an embodiment of the present application.

[0051] The first aspect of the embodiment of the present application provides a flush membrane core body, as shown in the accompanying drawings, comprising a steel base 1 and a flush membrane 2 arranged on the surface of the steel base; Figure 1

[0052] The flush membrane 2 comprises a composite strain layer 23.

[0053] As shown in the accompanying drawings, Figure 2 The composite strain layer 23 comprises a first strain layer 231, a second strain layer 232, a third strain layer 233, and a fourth strain layer 234 stacked in sequence.

[0054] The material of the first strain layer 231 comprises SiGeSnN.

[0055] The material of the second strain layer 232 comprises SiGeSnNiN.

[0056] The material of the third strain layer 233 comprises SiGeSnNiCrInN.

[0057] The material of the fourth strain layer 234 comprises SiGeNiCrInGaN.

[0058] The flush membrane core body provided by the embodiment of the present application has a composite strain layer comprising four strain layers (a first strain layer, a second strain layer, a third strain layer, and a fourth strain layer). In the four strain layers, the second strain layer contains all elements of the first strain layer and only contains Ni additionally in the adjacent first strain layer and second strain layer; the third strain layer contains all elements of the second strain layer and only contains Cr and In additionally in the adjacent second strain layer and third strain layer; the fourth strain layer contains the elements Si, Ge, Ni, Cr, In, and N of the third strain layer in the adjacent third strain layer and fourth strain layer, and the only difference is that the third strain layer contains Sn and the fourth strain layer contains Ga, and the chemical properties of Sn and Ga are similar. Therefore, the difference in element types between the four strain layers of the composite strain layer is small, so that the bonding strength between the adjacent two layers is high, thereby improving the stability of the composite strain layer. Further, the first strain layer, the second strain layer, the third strain layer, and the fourth strain layer mutually cooperate to sense pressure from various directions, thereby improving the strain sensitivity of the flush membrane core body. In addition, in the composite strain layer, N in each strain layer forms silicon nitride and gallium nitride with silicon and gallium respectively, and silicon nitride and gallium nitride have high corrosion resistance, high sensitivity, and high stability in high-temperature or corrosive environments, thereby making the measurement result accurate.

[0059] In some embodiments, the material of the steel base is 17-4PH stainless steel. ​

[0060] In some embodiments, referring to Figure 3 The flush film 2 further comprises a transition layer 21, an insulation layer 22, a protective layer 24 and a pad 25.

[0061] The transition layer 21, the insulation layer 22, the composite strain layer 23 and the pad 25 are longitudinally sequentially stacked.

[0062] The protective layer 24 is arranged on the surface of the transition layer 21, the insulation layer 22 and the composite strain layer 23.

[0063] In this case, the transition layer can improve the bonding between the steel base and the flush film, so that the flush film is not easy to fall off and the stress is relieved; the insulation layer can make electrical insulation and improve signal quality; the protective layer can protect the composite strain layer and prevent the composite strain layer from reducing sensitivity or even losing sensitivity due to oxidation.

[0064] In some embodiments, the material of the transition layer is 17-4PH stainless steel oxide.

[0065] In some embodiments, the thickness of the transition layer is 190nm-250nm.

[0066] In some embodiments, the material of the insulation layer comprises silicon nitride. In some embodiments, the thickness of the insulation layer is 5μm-8μm. In this case, the silicon nitride can still maintain good insulation performance at high temperature, which is suitable for high temperature and high corrosion environment.

[0067] In some embodiments, the material of the first strain layer comprises elements with the following atomic percentage:

[0068] Si: 28%-32%, Ge: 25%-31%, Sn: 30%-35%, N: 5%-10%.

[0069] In some embodiments, the thickness of the first strain layer is 80nm-100nm.

[0070] In some embodiments, the material of the second strain layer comprises elements with the following atomic percentage:

[0071] Si: 27%-35%, Ge: 28%-37%, Sn: 18%-25%, Ni: 15%-22%, N: 3%-8%.

[0072] In some embodiments, the thickness of the second strain layer is 90nm-120nm.

[0073] In some embodiments, the material of the third strain layer comprises elements with the following atomic percentage:

[0074] Si: 19%~25%, Ge: 21%~28%, Sn: 23%~29%, Ni: 17%~21%, Cr: 8%~14%, In: 3%~8%, N: 1%~2%.

[0075] In some embodiments, the third strain layer has a thickness of 110nm~150nm.

[0076] In some embodiments, the material of the fourth strain layer includes elements with atomic percentage as follows:

[0077] Si: 23%~28%, Ge: 13%~25%, Ni: 15%~25%, Cr: 18%~21%, In: 5%~10%, Ga: 5%~10%, N: 2%~5%.

[0078] In some embodiments, the fourth strain layer has a thickness of 110nm~150nm.

[0079] In some embodiments, the material of the protective layer includes at least one of silicon nitride, aluminum oxide, and silicon oxide.

[0080] In some embodiments, the protective layer has a thickness of 500nm~700nm on the surface of the composite strain layer.

[0081] In some embodiments, the material of the pad is gold or silver.

[0082] In some embodiments, the pad has a thickness of 600nm~800nm.

[0083] The second aspect of the embodiments of the present application provides a preparation method of a flush membrane core, as shown in Figure 4 The preparation method includes the following steps:

[0084] S10. Preparing a transition layer, an insulation layer, and a composite strain layer on the surface of the steel base, respectively.

[0085] S20. Bonding a pad on the composite strain layer.

[0086] S30. Preparing a protective layer on the remaining part of the surface of the transition layer, the insulation layer, and the composite strain layer.

[0087] In some embodiments, in the step S10, the step of preparing the transition layer includes:

[0088] S101. Oxidize the surface of the steel base by electrochemical oxidation method / heat treatment method / mechanical oxidation method / plasma oxidation method to form a transition layer. In this case, the transition layer is directly formed by oxidizing the surface of the steel base, which can improve the bonding between the steel base and the flush film, so that the insulating layer and the composite strain layer are not easy to fall off. It should be noted that the position and area of the surface of the steel base to be oxidized are determined by the position and area of the flush film to be set, and the entire surface does not need to be oxidized; the electrochemical oxidation method / heat treatment method / mechanical oxidation method / plasma oxidation method are all conventional technical means in the art, and the oxidation conditions can be adjusted according to actual needs, which do not need to be particularly described in the embodiments of the application.

[0089] In some embodiments, in the step S10, the preparation of the insulating layer includes the following steps:

[0090] The silicon nitride is deposited on the surface of the transition layer by chemical vapor deposition to form the insulating layer.

[0091] In some specific embodiments, the chemical vapor deposition is specifically low pressure chemical vapor deposition (LPCVD) or plasma enhanced chemical vapor deposition (PECVD).

[0092] In some specific embodiments, the deposition of the silicon nitride by low pressure chemical vapor deposition (LPCVD) includes the following steps:

[0093] The silicon nitride precursor gas is deposited at a pressure of 600 Pa to 800 Pa and a temperature of 700°C to 800°C to obtain a silicon nitride insulating layer; wherein the silicon nitride precursor gas is silane (SiH4) and ammonia (NH3). It should be noted that low pressure chemical vapor deposition is a prior art, and the volume ratio of silane (SiH4) and ammonia (NH3) in the silicon nitride precursor, the flow rate of the precursor, and other parameters can be adjusted as needed, which do not need to be particularly limited in the embodiments of the application.

[0094] In some specific embodiments, the deposition of the silicon nitride by plasma enhanced chemical vapor deposition (PECVD) includes the following steps:

[0095] The silicon nitride precursor gas is deposited at a microwave frequency of 2450 MHz to 3000 MHz and a temperature of 200°C to 400°C to obtain a silicon nitride insulating layer; wherein the silicon nitride precursor gas is silane (SiH4) and ammonia (NH3). It should be noted that low pressure chemical vapor deposition is a prior art, and the volume ratio of silane (SiH4) and ammonia (NH3) in the silicon nitride precursor, the flow rate of the precursor, the pressure of the deposition cavity, and other parameters can be adjusted as needed, which do not need to be particularly limited in the embodiments of the application.

[0096] In some embodiments, in the step S10, the step of preparing the composite strain layer includes:

[0097] The first strain layer, the second strain layer, the third strain layer and the fourth strain layer are sequentially deposited on the surface of the insulation layer away from the transition layer by using a magnetron sputtering method. It should be noted that the sputtering conditions of the magnetron sputtering method can be adjusted as needed, and in the embodiments of the present application, no special limitation is required, but as an example, the sputtering power during deposition of the first strain layer can be 300W-400W, and the substrate temperature can be 600℃-800℃; the sputtering power during deposition of the second strain layer can be 350W-450W, and the substrate temperature can be 500℃-550℃; the sputtering power during deposition of the third strain layer can be 150W-250W, and the substrate temperature can be 230℃-350℃; the sputtering power during deposition of the fourth strain layer can be 130W-220W, and the substrate temperature can be 210℃-320℃.

[0098] In some embodiments, in the above step S30, the preparation of the protective layer comprises the following steps:

[0099] The protective layer is deposited on the surface of the transition layer, the insulation layer and the composite strain layer away from the remaining part of the steel base by using a magnetron sputtering method. It should be noted that the sputtering conditions of the magnetron sputtering method can be adjusted as needed, and in the embodiments of the present application, no special limitation is required, but as an example, the sputtering power during deposition can be 450W-600W, and the substrate temperature can be 600℃-800℃.

[0100] The third aspect of the embodiments of the present application provides a pressure transmitter, which comprises the flush membrane core provided by the embodiments of the present application.

[0101] The fourth aspect of the embodiments of the present application provides an application of the flush membrane core provided by the embodiments of the present application in the field of strain materials.

[0102] The following will be further described with specific examples.

[0103] Example 1

[0104] Example 1 provides a flush membrane core, which is composed of a 17-4PH stainless steel base and a flush membrane on the steel base.

[0105] The flush membrane is composed of a transition layer, an insulation layer, a composite strain layer, a protective layer and a pad, and the steel base, the transition layer, the insulation layer, the composite strain layer and the pad are sequentially stacked in the longitudinal direction, and the protective layer is arranged on the surface of the transition layer, the insulation layer and the composite strain layer.

[0106] The material of the transition layer is 17-4PH stainless steel oxide, and the thickness is 235nm.

[0107] The material of the insulation layer is silicon nitride, and the thickness is 7.1μm.

[0108] The protective layer is made of aluminum oxide and has a thickness of 633 nm on the surface of the composite strain layer.

[0109] The pads are made of gold and are 700nm thick.

[0110] The composite strain layer is composed of the following materials:

[0111] The first strain layer, the second strain layer, the third strain layer and the fourth strain layer are stacked in sequence, with the first strain layer bonded to the insulating layer;

[0112] The material of the first strain layer is: Si: 31%, Ge: 29%, Sn: 32%, N: 8%, and the thickness is 97nm;

[0113] The material of the second strain layer is: Si: 28%, Ge: 30%, Sn: 19%, Ni: 18%, N: 5%, and the thickness is 108nm;

[0114] The material of the third strain layer is: Si: 20%, Ge: 23%, Sn: 25%, Ni: 19%, Cr: 9%, In: 3%, N: 1%, and the thickness is 128nm;

[0115] The materials of the fourth strain layer are: Si: 28%, Ge: 20%, Ni: 17%, Cr: 18%, In: 5%, Ga: 10%, N: 2%, and the thickness is 138nm.

[0116] This embodiment also proposes a method for preparing a flush membrane core, the steps of which are as follows:

[0117] S1. A transition layer is obtained by oxidizing the surface of the steel substrate using plasma oxidation.

[0118] S2. A silicon nitride precursor gas is deposited at a pressure of 682 Pa and a temperature of 769 °C to obtain a silicon nitride insulating layer; wherein the silicon nitride precursor gas is silane (SiH4) and ammonia (NH3).

[0119] S3. A first strain layer (sputtering power of 394W, substrate temperature of 700℃), a second strain layer (sputtering power of 400W, substrate temperature of 500℃), a third strain layer (sputtering power of 238W, substrate temperature of 320℃), and a fourth strain layer (sputtering power of 150W, substrate temperature of 290℃) are sequentially deposited on the surface of the insulating layer away from the transition layer using magnetron sputtering deposition.

[0120] S4. Protective layers were deposited on the surfaces of the transition layer, insulating layer, and composite strain layer, respectively, away from the steel substrate, using magnetron sputtering deposition. The sputtering power was 550W and the substrate temperature was 710℃.

[0121] Example 2

[0122] The embodiment 2 provides a flush film core, which is composed of a 17-4PH stainless steel base and a flush film on the base.

[0123] The flush film is composed of a transition layer, an insulation layer, a composite strain layer, a protective layer and a pad, the base, the transition layer, the insulation layer, the composite strain layer and the pad are sequentially arranged in a longitudinal direction, and the protective layer is arranged on surfaces of the transition layer, the insulation layer and the composite strain layer.

[0124] The material of the transition layer is 17-4PH stainless steel oxide, and the thickness is 190 nm.

[0125] The material of the insulation layer is silicon nitride, and the thickness is 8 μm.

[0126] The material of the protective layer is aluminum oxide, and the thickness on the surface of the composite strain layer is 699 nm.

[0127] The material of the pad is a gold pad, and the thickness is 800 nm.

[0128] The composite strain layer is composed of the following materials:

[0129] The first strain layer, the second strain layer, the third strain layer and the fourth strain layer are sequentially arranged, and the first strain layer is attached to the insulation layer.

[0130] The material of the first strain layer is Si: 29%, Ge: 31%, Sn: 30%, N: 10%, and the thickness is 100 nm.

[0131] The material of the second strain layer is Si: 35%, Ge: 29%, Sn: 18%, Ni: 15%, N: 3%, and the thickness is 120 nm.

[0132] The material of the third strain layer is Si: 25%, Ge: 21%, Sn: 23%, Ni: 17%, Cr: 8%, In: 4%, N: 2%, and the thickness is 150 nm.

[0133] The material of the fourth strain layer is Si: 25%, Ge: 25%, Ni: 15%, Cr: 19%, In: 5%, Ga: 9%, N: 2%, and the thickness is 150 nm.

[0134] The embodiment also provides a preparation method of the flush film core, and the steps are the same as those of the embodiment 1.

[0135] The embodiment 3 provides a flush film core, which is composed of a 17-4PH stainless steel base and a flush film on the base.

[0136] The embodiment 3 provides a flush film core, which is composed of a 17-4PH stainless steel base and a flush film on the base.

[0137] The flush film is composed of a transition layer, an insulation layer, a composite strain layer, a protective layer and a pad, the steel base, the transition layer, the insulation layer, the composite strain layer and the pad are sequentially stacked in the longitudinal direction, and the protective layer is arranged on the surface of the transition layer, the insulation layer and the composite strain layer.

[0138] The material of the transition layer is 17-4PH stainless steel oxide, and the thickness is 250 nm.

[0139] The material of the insulation layer is silicon nitride, and the thickness is 5 μm.

[0140] The material of the protective layer is aluminum oxide, and the thickness on the surface of the composite strain layer is 500 nm.

[0141] The material of the pad is gold pad, and the thickness is 600 nm.

[0142] The composite strain layer is composed of the following materials:

[0143] The first strain layer, the second strain layer, the third strain layer and the fourth strain layer are sequentially stacked, and the first strain layer is attached to the insulation layer.

[0144] The material of the first strain layer is Si: 28%, Ge: 27%, Sn: 35%, N: 10%, and the thickness is 80 nm.

[0145] The material of the second strain layer is Si: 27%, Ge: 28%, Sn: 20%, Ni: 19%, N: 6%, and the thickness is 90 nm.

[0146] The material of the third strain layer is Si: 19%, Ge: 21%, Sn: 23%, Ni: 18%, Cr: 13%, In: 5%, N: 1%, and the thickness is 110 nm.

[0147] The material of the fourth strain layer is Si: 23%, Ge: 17%, Ni: 25%, Cr: 21%, In: 56%, Ga: 5%, N: 3%, and the thickness is 110 nm.

[0148] The embodiment also provides a preparation method of the flush film core, and the steps are the same as those of the embodiment 1.

[0149] Comparative Example 1

[0150] The comparative example 1 provides a flush film core, and the structure is basically the same as that of the embodiment 1, except that:

[0151] There is only one strain layer, and the material is Si: 20%, Ge: 23%, Sn: 25%, Ni: 19%, Cr: 9%, In: 3%, N: 1%, and the thickness is 471 nm.

[0152] Comparative Example 2

[0153] Comparative Example 2 provides a flush membrane core body, which is basically the same as that of Example 1, except that:

[0154] No transition layer; the material of the insulating layer is silicon nitride, and the thickness is 7.34 μm.

[0155] Comparative Example 3

[0156] Comparative Example 3 provides a flush membrane core body, which is basically the same as that of Example 1, except that:

[0157] The stacking order of the first strain layer, the second strain layer, the third strain layer and the fourth strain layer in the composite strain layer is:

[0158] The fourth strain layer, the third strain layer, the second strain layer and the first strain layer are sequentially stacked, and the fourth strain layer is attached to the insulating layer.

[0159] Correspondingly, Comparative Example 3 also provides a preparation method of a flush membrane core body, which is basically the same as that of Example 1, except that:

[0160] In step S3, a magnetron sputtering plating method is used to sequentially deposit the fourth strain layer, the third strain layer, the second strain layer and the first strain layer on the surface of the insulating layer away from the transition layer.

[0161] Comparative Example 4

[0162] Comparative Example 4 provides a flush membrane core body, which is basically the same as that of Example 1, except that:

[0163] The third strain layer is not contained in the composite strain layer.

[0164] Correspondingly, Comparative Example 4 also provides a preparation method of a flush membrane core body, which is basically the same as that of Example 1, except that:

[0165] In step S3, a magnetron sputtering plating method is used to sequentially deposit the first strain layer, the second strain layer and the fourth strain layer on the surface of the insulating layer away from the transition layer.

[0166] Comparative Example 5

[0167] Comparative Example 5 provides a flush membrane core body, which is basically the same as that of Example 1, except that:

[0168] The fourth strain layer is not contained in the composite strain layer.

[0169] Correspondingly, Comparative Example 5 also provides a preparation method of a flush membrane core body, which is basically the same as that of Example 1, except that:

[0170] In step S3, a first strain layer, a second strain layer and a third strain layer are sequentially deposited on the surface of the insulating layer away from the transition layer by using a magnetron sputtering coating method.

[0171] In order to verify the progressiveness of the flush membrane core and the preparation method thereof, the flush membrane in the flush membrane core provided by the examples and the comparative examples was subjected to corrosion resistance test according to GB / T10125-201; and the flush membrane core provided by the examples and the comparative examples was made into a pressure transmitter for overload capacity test. The results are shown in Table 1 below.

[0172] Overload test method: the fatigue impact equipment was used to perform fatigue impact test on the pressure product which had been made out in the range of 200%FS~500%FS (firstly, 100%FS was used to screen out a wide range; and then 10% was used to screen out the final result), and the test condition was 1W times, 24 times / min; after fatigue, the product was subjected to verification according to JJG 882-2019 “Pressure Transmitter” verification regulation, and the product needed to meet the performance requirements.

[0173] .

[0174] From the data in Table 1 above, at least the following conclusions can be drawn:

[0175] (1) From the corrosion rates of the examples and the comparative examples, it can be seen that in the composite strain layer of the flush membrane core provided by the examples, under the condition that the protective layer is unchanged, the silicon nitride and gallium nitride formed by N in each strain layer and metal silicon or gallium have very high corrosion resistance, and the corrosion resistance of the four-layer strain layer is better than that of the strain layer of three layers or less, so that the flush membrane core provided by the examples has high sensitivity, high stability and the like in a high-temperature or corrosive environment, and further makes the measurement result accurate.

[0176] (2) From the overload capacity data of the examples and the comparative examples, it can be seen that the pressure transmitter containing the flush membrane core provided by the examples has very high overload capacity, so that it can maintain stable performance in a harsh working environment and provide accurate pressure data.

[0177] It should be noted that the present application is not limited to the above embodiments. The above embodiments are only examples, and embodiments having the same technical idea and playing the same role and effect within the scope of the technical solutions of the present application are all included in the technical scope of the present application. In addition, within the scope of the main idea of the present application, various modifications that can be thought of by those skilled in the art, and other ways constructed by combining part of the constituent elements in the embodiments are also included in the scope of the present application.

Claims

1. A flush membrane core, comprising a steel substrate and a flush membrane; characterized in that, The flush membrane includes a composite strain layer; The composite strain layer comprises a first strain layer, a second strain layer, a third strain layer, and a fourth strain layer stacked sequentially. The material of the first strain layer includes SiGeSnN; The material of the second strain layer includes SiGeSnNiN; The material of the third strain layer includes SiGeSnNiCrInN; The material of the fourth strain layer includes SiGeNiCrInGaN; The material of the second strain layer comprises elements with the following atomic percentages: Si: 27%~35%, Ge: 28%~37%, Sn: 18%~25%, Ni: 15%~22%, N: 3%~8%; The material of the third strain layer comprises the following elements in atomic percentage: Si: 19%~25%, Ge: 21%~28%, Sn: 23%~29%, Ni: 17%~21%, Cr: 8%~14%, In: 3%~8%, N: 1%~2%.

2. The flush membrane core according to claim 1, characterized in that, The material of the first strain layer comprises elements with the following atomic percentages: Si: 28%~32%, Ge: 25%~31%, Sn: 30%~35%, N: 5%~10%.

3. The flush membrane core according to claim 1 or 2, characterized in that, The material of the fourth strain layer comprises elements with the following atomic percentages: Si: 23%~28%, Ge: 13%~25%, Ni: 15%~25%, Cr: 18%~21%, In: 5%~10%, Ga: 5%~10%, N: 2%~5%.

4. The flush membrane core according to claim 3, characterized in that, The flush membrane also includes a transition layer, an insulating layer, a protective layer, and solder pads; The steel substrate, the transition layer, the insulating layer, the composite strain layer, and the solder pads are stacked longitudinally in sequence. The protective layer is disposed on the surface of the transition layer, the insulating layer and the composite strain layer.

5. The flush membrane core according to claim 4, characterized in that, The thickness of the first strain layer is 80nm~100nm; The thickness of the second strain layer is 90nm~120nm; The thickness of the third strain layer is 110 nm to 150 nm; The thickness of the fourth strain layer is 110nm~150nm.

6. A method for preparing a flush membrane core as described in any one of claims 1 to 5, characterized in that, Includes the following steps: A transition layer, an insulating layer, and a composite strain layer are respectively prepared on the surface of the steel substrate; Bonding pads are fixed onto the composite strain layer; A protective layer is prepared on the remaining portions of the surfaces of the transition layer, the insulating layer, and the composite strain layer.

7. A pressure transmitter, characterized in that, Includes the flush membrane core as described in any one of claims 1 to 5.

8. The application of a flush membrane core as described in any one of claims 1 to 5 in the field of strain materials.

Images