Dislocation classification method and device, equipment, storage medium and program product

Abstract

The invention discloses a dislocation classification method, a dislocation classification device, dislocation classification equipment, a storage medium and a computer program product, relates to the technical field of material microstructure detection and analysis, and provides a method for analyzing and representing the dislocation category in a face-centered cubic metal twin crystal structure through a transmission electron microscope. Aiming at the geometrical relationship between the Bersonian vectors of the dislocations and twin crystal planes, in order to distinguish the types of the dislocations, the conventional operation at least needs to calibrate the Bersonian vectors of all the dislocations and then compare and define the types of the dislocations to distinguish the dislocations. According to the invention, three kinds of dislocations in the twin crystal structure can be simply and quickly distinguished based on double-beam imaging of diffraction vectors near one crystal zone axis. In this way, calculation of the Berger vector and dislocation classification calibration are skipped, dislocation classification discrimination is directly carried out based on even number imaging, and efficient and direct dislocation classification is achieved.

Description

Technical Field

[0001] The present application relates to the technical field of material microstructure detection and analysis, and in particular to a dislocation classification method, a dislocation classification apparatus, a dislocation classification device, a storage medium and a computer program product. Background Art

[0002] In recent years, the introduction of twin structures, especially nano-sized twin lamella structures, into face-centered cubic metal materials to strengthen the materials has attracted widespread attention and has become an important means of strengthening metal materials. Studies have shown that coherent twin interfaces, like traditional grain boundaries, can hinder the movement of dislocations, thereby strengthening the material. At the same time, other studies have found that dislocations can move through twin boundaries and interact with twin boundaries, allowing the material to undergo certain plastic deformation through dislocation movement.

[0003] A large number of research results show that different twin size, distribution and other structural factors will cause twin materials to exhibit different mechanical properties, which is mainly related to the interaction between dislocations and twin boundaries. The interaction between dislocations and twin interfaces is very complex. Clearly characterizing the dislocation structure in the twin structure and determining the Burgers vector of the dislocation to distinguish the dislocation type is an important basis for analyzing the interaction between dislocations and twins in the twin structure of face-centered cubic metal materials.

[0004] Currently, the double-beam diffraction technique in a TEM (Transmission Electron Microscope) can be used to determine the Burgers vector of a dislocation and to achieve clear imaging of the dislocation with a specific Burgers vector.

[0005] However, among face-centered cubic metal materials, there are 6 <110> For all dislocations, at least five different diffraction vectors need to be used and imaging needs to be performed near at least two crystal zone axes in order to distinguish all six dislocations. Specifically, it is necessary to arrange and combine the extinction and imaging conditions to calculate the Burgers vectors of the six dislocations, and then distinguish all six dislocations one by one based on the calculated Burgers vectors in order to classify them, which makes the entire dislocation classification process cumbersome and inefficient.

[0006] The above contents are only used to assist in understanding the technical solution of the present application and do not constitute an admission that the above contents are prior art. Summary of the invention

[0007] The main purpose of the present application is to provide a dislocation classification method, a dislocation classification device, a dislocation classification equipment, a storage medium and a computer program product, aiming to solve the technical problems of cumbersome and inefficient dislocation classification process.

[0008] To achieve the above objectives, the present application proposes a dislocation classification method, which includes: Determine a crystal zone axis parallel to the twin interface of the crystal sample to be classified, and a diffraction vector of the crystal zone axis; Tilting the crystal sample to be classified so that the electron beam of the transmission electron microscope is incident along the diffraction vector, and photographing to obtain a double-beam image of the crystal sample to be classified; By comparing the dual-beam imaging, the dislocations in the crystal sample to be classified are classified.

[0009] In one embodiment, the step of determining the diffraction vector of the crystal zone axis comprises: Through the diffraction spot results of the crystal zone axis extinction and imaging, the diffraction vector that can be imaged near the crystal zone axis and has the lowest index is determined as the diffraction vector of the crystal zone axis.

[0010] In one embodiment, the diffraction vectors of the crystal zone axis include a first diffraction vector, a second diffraction vector, and a third diffraction vector; the step of tilting the crystal sample to be classified so that the electron beam of the transmission electron microscope is incident along the diffraction vector, and photographing and obtaining a double-beam image of the crystal sample to be classified includes: Tilt the crystal sample to be classified for the first time so that the electron beam of the transmission electron microscope is incident along the first diffraction vector, and take a first double-beam image of the crystal sample to be classified; Tilt the crystal sample to be classified for a second time so that the electron beam of the transmission electron microscope is incident along the second diffraction vector, and take a second double-beam image of the crystal sample to be classified; The crystal sample to be classified is tilted for the first time so that the electron beam of the transmission electron microscope is incident along the third diffraction vector, and a third double-beam image of the crystal sample to be classified is obtained by taking pictures.

[0011] In one embodiment, the step of classifying the dislocations in the crystal sample to be classified by comparing the dual-beam imaging comprises: According to the imaging results in the first dual-beam imaging, the second dual-beam imaging and the third dual-beam imaging, it is determined whether the dislocation in the crystal sample to be classified is the first dislocation, the second dislocation or the third dislocation.

[0012] In one embodiment, the step of determining whether the dislocation in the crystal sample to be classified is the first dislocation, the second dislocation or the third dislocation according to the imaging results in the first dual-beam imaging, the second dual-beam imaging and the third dual-beam imaging comprises: If imaging is performed simultaneously in the first dual-beam imaging and the second dual-beam imaging, or imaging is performed simultaneously in the first dual-beam imaging and the third dual-beam imaging, then determining that the dislocation in the crystal sample to be classified is the first dislocation; If the dislocation is extinguished in the first double-beam imaging and imaged in the second double-beam imaging or the third double-beam imaging, then the dislocation in the crystal sample to be classified is determined to be a second dislocation; If the dislocation is extinguished in the first dual-beam imaging and imaged in the second dual-beam imaging or the third dual-beam imaging, and the dislocation line is parallel to the twin interface, then the dislocation in the crystal sample to be classified is determined to be the third dislocation.

[0013] In one embodiment, after the step of classifying the dislocations in the crystal sample to be classified by comparing the dual-beam imaging, the step further includes: Based on the classified dislocations, the Burgers vector of each dislocation line is determined.

[0014] In addition, to achieve the above-mentioned purpose, the present application also proposes a dislocation classification device, the dislocation classification device comprising: A determination module, used to determine a crystal zone axis parallel to the twin interface of the crystal sample to be classified, and a diffraction vector of the crystal zone axis; An imaging module, used for tilting the crystal sample to be classified so that the electron beam of the transmission electron microscope is incident along the diffraction vector, and photographing to obtain a double-beam imaging of the crystal sample to be classified; The analysis module is used to classify the dislocations in the crystal sample to be classified by comparing the dual-beam imaging.

[0015] In addition, to achieve the above objectives, the present application also proposes a dislocation classification device, which includes: a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein the computer program is configured to implement the steps of the dislocation classification method described above.

[0016] In addition, to achieve the above objectives, the present application also proposes a storage medium, which is a computer-readable storage medium, on which a computer program is stored, and when the computer program is executed by a processor, the steps of the dislocation classification method described above are implemented.

[0017] In addition, to achieve the above-mentioned purpose, the present application also provides a computer program product, which includes a computer program, and when the computer program is executed by a processor, the steps of the dislocation classification method described above are implemented.

[0018] One or more technical solutions proposed in this application have at least the following technical effects: In the present application, a method for analyzing and characterizing the types of dislocations in a face-centered cubic metal twin structure by transmission electron microscopy is proposed. In view of the geometric relationship between the Burgers vector of the dislocation and the twin plane, in order to distinguish the types of dislocations, conventional operations require at least calibrating the Burgers vectors of all dislocations and then comparing and defining the types of dislocations to make dislocation distinctions. In the present application, based on dual-beam imaging of diffraction vectors near one crystal band axis, three types of dislocations in a twin structure are simply and quickly distinguished. In this way, the calculation of the Burgers vector and the calibration of dislocation classification are skipped, and dislocation classification is directly performed based on dual-beam imaging, thereby achieving efficient and direct dislocation classification. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the present application and, together with the description, serve to explain the principles of the present application.

[0020] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, for ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0021] Figure 1 A schematic diagram of a process flow provided for the first embodiment of the dislocation classification method of the present application; Figure 2 A schematic diagram of the Burgers vector of dislocations in twins provided in Example 1 of the dislocation classification method of the present application; Figure 3 A schematic diagram of a double-beam bright field image of three types of dislocations in twinned copper provided in Example 1 of the dislocation classification method of the present application; Figure 4 This is a schematic diagram of the module structure of the dislocation classification device according to an embodiment of the present application; Figure 5 Schematic diagram of the device structure of the hardware operating environment involved in the dislocation classification method in the embodiment of the present application.

[0022] The purpose, features and advantages of this application will be further described in conjunction with the embodiments and with reference to the accompanying drawings. DETAILED DESCRIPTION

[0023] It should be understood that the specific embodiments described herein are only used to explain the technical solutions of the present application and are not used to limit the present application.

[0024] In order to better understand the technical solution of the present application, a detailed description will be given below in conjunction with the accompanying drawings and specific implementation methods.

[0025] It should be noted that the execution subject of this embodiment may be a computing service device with data processing, network communication and program running functions, such as a tablet computer, a personal computer, a mobile phone, etc., or an electronic device capable of realizing the above functions, a dislocation classification device, etc. The following takes the dislocation classification device as an example to illustrate this embodiment and the following embodiments.

[0026] Based on this, the present application embodiment provides a dislocation classification method, referring to Figure 1 , Figure 1 This is a flow chart of the first embodiment of the dislocation classification method of the present application.

[0027] In this embodiment, the dislocation classification method includes steps S10 to S30: Step S10: determining the crystal zone axis parallel to the twin interface and the diffraction vector of the crystal zone axis of the crystal sample to be classified; Twins refer to a special structure formed when one part of the crystal undergoes uniform shearing along a specific crystal plane and crystal direction relative to another part of the crystal in the crystal structure. The formation of twins is usually due to the fact that when a crystal is subjected to stress, a part of the crystal undergoes uniform shearing along a specific crystal plane and crystal direction, forming a new crystal structure that is similar to the original crystal structure but in a different orientation.

[0028] Twin interface refers to the mirror-symmetric orientation relationship between two crystals (or two parts of a crystal) along a common crystal plane. These two crystals are called twins, and this common crystal plane is called the twin plane. Twin interfaces can be divided into two categories, namely coherent twin boundaries and incoherent twin boundaries.

[0029] A crystal face is a plane composed of lattice points of atoms, ions or molecules in a crystal, and a crystal can be considered as a stack of layers of crystal faces. A crystal band is a collection of two or more crystal faces in a crystal. These crystal faces are not necessarily parallel, but they are all parallel to a common axis, namely the crystal band axis. The crystal band axis is a straight line indicating the direction of the crystal band. It is parallel to all the crystal faces of the crystal band and is also the common edge of all the crystal faces of the crystal band.

[0030] In one embodiment, referring to Figure 2 , the twin interface is <111> Crystal plane,

[011] crystal zone axis includes AD, BD or CD edge lines.

[0031] In a feasible implementation manner, the step S10 includes: Through the diffraction spot results of the crystal zone axis extinction and imaging, the diffraction vector that can be imaged near the crystal zone axis and has the lowest index is determined as the diffraction vector of the crystal zone axis.

[0032] In one embodiment, there are three groups of diffraction spots of crystal planes (111), (-111) and (200) on the

[011] crystal zone axis, and the three diffraction vectors that can be imaged or have the lowest index are determined based on the diffraction spot results of the crystal zone axis extinction and imaging, as the diffraction vectors of the crystal zone axis. Figure 3 a1, b1 and c1, the three diffraction vectors determined are g(111), g(-111) and g(200) respectively.

[0033] Step S20: tilting the crystal sample to be classified so that the electron beam of the transmission electron microscope is incident along the diffraction vector, and taking a double-beam image of the crystal sample to be classified; In the transmission electron microscope (TEM) mode, the twin boundary is <111> The electron beam is incident along the

[011] crystal axis parallel to the twin interface. Under this condition, the twin boundary can present a clear and sharp interface, and in the same grain, multiple sets of twin boundaries are parallel to each other and have the same orientation, such as Figure 3 This is shown by the oblique parallel lines in a2, b2 and c2. In a feasible implementation manner, the diffraction vector of the crystal zone axis includes a first diffraction vector, a second diffraction vector and a third diffraction vector; the step S20 includes: Tilt the crystal sample to be classified for the first time so that the electron beam of the transmission electron microscope is incident along the first diffraction vector, and take a first double-beam image of the crystal sample to be classified; Tilt the crystal sample to be classified for the second time so that the electron beam of the transmission electron microscope is incident along the second diffraction vector, and take a second double-beam image of the crystal sample to be classified; The crystal sample to be classified is tilted for the first time so that the electron beam of the transmission electron microscope is incident along the third diffraction vector, and a third double-beam image of the crystal sample to be classified is obtained by taking pictures.

[0034] In one embodiment, referring to Figure 3 , the diffraction vectors of the crystal zone axis include a first diffraction vector g (111), a second diffraction vector g (-111) and a third diffraction vector g (200). Alternatively, the second diffraction vector is g (200) and the third diffraction vector is g (-111).

[0035] By tilting the sample, three double-beam images corresponding to the three diffraction vectors g (111), (-111) and (200) are obtained respectively, and the first, second and third double-beam images of the crystal sample to be classified are taken.

[0036] In one embodiment, the TEM mode is selected in the transmission electron microscope, the crystal sample to be classified is tilted, the electron beam is incident along the

[011] crystal zone axis parallel to the twin interface, the diffraction spectrum is taken, and the TEM bright field (or dark field image) is taken.

[0037] Tilt the crystal sample to be classified so that the electron beam is incident along the diffraction vector g(111) on the

[011] crystal zone axis, i.e. the first double-beam diffraction and double-beam imaging. Take the diffraction spectrum of the sample and take the TEM bright field (or dark field image).

[0038] Tilt the crystal sample to be classified so that the electron beam is incident along the diffraction vector g(-111) near the

[011] crystal zone axis, i.e. the second double-beam diffraction and double-beam imaging. Take the diffraction spectrum of the sample and take the TEM bright field (or dark field image).

[0039] Tilt the crystal sample to be classified so that the electron beam is incident along the diffraction vector g(200) on the

[011] crystal axis, i.e. the third double-beam diffraction and double-beam imaging. Take the diffraction spectrum of the sample and take the TEM bright field (or dark field image).

[0040] The diffraction vector near the crystal zone axis refers to the direction of the diffraction wave generated by the crystal plane parallel to the crystal zone axis.

[0041] Step S30: classifying the dislocations in the crystal sample to be classified by comparing the dual-beam imaging.

[0042] Dislocation is an internal microscopic defect in a crystalline material, which describes the irregular arrangement of atoms in the crystal. Dislocation can be regarded as the boundary between the slipped part and the non-slipped part of the crystal. The formation of dislocation is usually related to the plastic deformation of the crystal under stress. Under the action of external force, the dislocation inside the crystal can move, resulting in the slip and shaping of the crystal.

[0043] According to the characteristics of dislocations in twins, based on a set of diffraction vectors g, it is possible to distinguish type I from type II and type III dislocations based on the "double beam" of the diffraction vector g (111), as shown in Table 1. In the TEM image of the

[011] crystal zone axis, the slip plane of the type III dislocation is parallel to the twin boundary, so its dislocation line is also strictly parallel to the twin boundary. In this way, type II and type III dislocations can be distinguished based on the morphological feature of whether they are parallel to the twin boundary. In this way, three different types of dislocations can be distinguished near a crystal zone axis using only three diffraction vectors g.

[0044]

[0045] Table 1 In a feasible implementation manner, the step S30 includes: According to the imaging results in the first double-beam imaging, the second double-beam imaging and the third double-beam imaging, it is determined whether the dislocation in the crystal sample to be classified is the first dislocation, the second dislocation or the third dislocation.

[0046] In the dislocation behavior of twin structure, since the twin structure has a special twin orientation, that is, the twin plane is on one set of slip planes, the dislocation in the twin is divided into three categories according to the relative relationship between the Burgers vector and the twin, which can be referred to Figure 2 , respectively, type I dislocation: both the slip plane and the slip direction are inclined to the twin boundary; type II dislocation: the slip plane is inclined to the twin boundary, and the slip direction is parallel to the twin boundary; type III dislocation: both the slip plane and the slip direction are parallel to the twin boundary. Therefore, according to the imaging results in the first dual-beam imaging, the second dual-beam imaging, and the third dual-beam imaging, it can be determined whether the dislocation in the crystal sample to be classified is the first dislocation, the second dislocation, or the third dislocation.

[0047] It should be noted that Figure 2 The Burgers vectors for type II and type III dislocations are both b4-6, except that Figure 1 The slip planes of type II and type III dislocations are not shown.

[0048] In a feasible implementation manner, the step of determining whether the dislocation in the crystal sample to be classified is the first dislocation, the second dislocation or the third dislocation according to the imaging results in the first dual-beam imaging, the second dual-beam imaging and the third dual-beam imaging comprises: If imaging is performed simultaneously in the first double-beam imaging and the second double-beam imaging, or imaging is performed simultaneously in the first double-beam imaging and the third double-beam imaging, then the dislocation in the crystal sample to be classified is determined to be the first dislocation; If the light is extinguished in the first double-beam imaging and imaged in the second double-beam imaging or the third double-beam imaging, then the dislocation in the crystal sample to be classified is determined to be the second dislocation; If the dislocation is extinguished in the first double-beam imaging and imaged in the second double-beam imaging or the third double-beam imaging, and the dislocation line is parallel to the twin interface, then the dislocation in the crystal sample to be classified is determined to be the third dislocation.

[0049] By comparing the bright field images obtained by three sets of double-beam diffraction, the dislocations that are imaged simultaneously under g(-111) and g(111) or simultaneously under g(200) and g(111) are type I dislocations; the dislocation lines that are imaged under g(-111) or g(200) but extinguished under g(111) are type II and III dislocations, among which the dislocations that are parallel to the twin boundary are type III dislocations.

[0050] In a feasible implementation manner, after step S30, the step further includes: Based on the classified dislocations, the Burgers vector of each dislocation line is determined.

[0051] A dislocation line is a boundary line of a slipped area on a slip plane within a crystal or lattice.

[0052] In one embodiment, transmission electron microscope diffraction imaging and dual-beam electron diffraction imaging are used to select appropriate crystal orientation, imaging conditions and magnification, and comprehensively calculate the extinction conditions of different types of dislocations. Dislocations in the twin structure of a face-centered cubic metal can be clearly imaged to achieve clear imaging of dislocation lines and determine the Burgers vector of the dislocation line, thereby achieving characterization of dislocations in the twin structure and clear analysis of dislocation types.

[0053] In view of the geometric relationship between the dislocation Burgers vector and the twin plane, in order to distinguish these three types of dislocations, such as the dislocations corresponding to the Burgers vectors b1-b6 in Table 1, conventional operations require at least calibrating the Burgers vectors of all dislocations and then comparing and defining the dislocation types to make dislocation distinctions.

[0054] In this application, in view of the characteristics of the twin structure in the face-centered cubic, by selecting a specific diffraction vector for imaging in the traditional imaging method, the cumbersome process of dislocation imaging and differentiation by "double-beam" diffraction is simplified. Based on the double-beam imaging of the diffraction vector near one crystal axis, the three types of dislocations in the twin structure are simply and quickly distinguished. In this way, the calculation of the Burgers vector and the classification and calibration of dislocations are skipped, and the classification and discrimination of dislocations are directly performed based on the double-number imaging, so as to achieve efficient and direct dislocation classification.

[0055] In one application scenario of the dislocation classification method of the present application, columnar nano-twinned copper with growth texture is used. Under a compressive deformation strain of 3%, a transmission electron microscope sample is prepared by electrolytic double-spray thinning to analyze and characterize the dislocation structure within the twin. A Thermo Fisher transmission electron microscope is used with a voltage of 200 kV and the experiment is carried out in transmission mode. In the transmission electron microscope, the TEM mode is selected, the sample is tilted, and the electron beam is incident along the

[011] crystal band axis parallel to the twin interface to capture the diffraction spectrum and bright field image. Tilt near

[011] , and obtain the first double-beam imaging ( Figure 3 -a1); Under the diffraction vector g(200), the second double-beam imaging is obtained ( Figure 3 -b1); Under the diffraction vector g(11-1), the third double-beam imaging is obtained ( Figure 3 -c1). Compare the three groups of bright field images, Figure 3 The solid lines in the schematic diagrams a2, b2 and c2 represent type I dislocations that are imaged simultaneously under g(11-1) and g(111) or simultaneously under g(200) and g(111); the dotted lines represent type II dislocations that are imaged under g(11-1) or g(200) but extinguished under g(111); the white lines with black edges represent type III dislocations that are imaged under g(11-1) or g(200) but extinguished under g(111), and whose dislocation lines are parallel to the twin boundaries.

[0056] It should be noted that the above examples are only used to understand the present application and do not constitute a limitation on the dislocation classification method of the present application. More simple transformations based on this technical concept are all within the scope of protection of the present application.

[0057] This application also provides a dislocation classification device, please refer to Figure 4 , the dislocation classification device comprises: A determination module 10 is used to determine the crystal zone axis parallel to the twin interface of the crystal sample to be classified, and the diffraction vector of the crystal zone axis; An imaging module 20 is used to tilt the crystal sample to be classified so that the electron beam of the transmission electron microscope is incident along the diffraction vector, and to obtain a double-beam image of the crystal sample to be classified; The analysis module 30 is used to classify the dislocations in the crystal sample to be classified by comparing the dual-beam imaging.

[0058] In one embodiment, the determining module 10 is further configured to: Through the diffraction spot results of the crystal zone axis extinction and imaging, the diffraction vector that can be imaged near the crystal zone axis and has the lowest index is determined as the diffraction vector of the crystal zone axis.

[0059] In one embodiment, the diffraction vectors of the crystal zone axis include a first diffraction vector, a second diffraction vector and a third diffraction vector; the imaging module 20 is further used for: Tilt the crystal sample to be classified for the first time so that the electron beam of the transmission electron microscope is incident along the first diffraction vector, and take a first double-beam image of the crystal sample to be classified; Tilt the crystal sample to be classified for the second time so that the electron beam of the transmission electron microscope is incident along the second diffraction vector, and take a second double-beam image of the crystal sample to be classified; The crystal sample to be classified is tilted for the first time so that the electron beam of the transmission electron microscope is incident along the third diffraction vector, and a third double-beam image of the crystal sample to be classified is obtained by taking pictures.

[0060] In one embodiment, the analysis module 30 is further configured to: According to the imaging results in the first double-beam imaging, the second double-beam imaging and the third double-beam imaging, it is determined whether the dislocation in the crystal sample to be classified is the first dislocation, the second dislocation or the third dislocation.

[0061] In one embodiment, the analysis module 30 is further configured to: If imaging is performed simultaneously in the first double-beam imaging and the second double-beam imaging, or imaging is performed simultaneously in the first double-beam imaging and the third double-beam imaging, then the dislocation in the crystal sample to be classified is determined to be the first dislocation; If the light is extinguished in the first double-beam imaging and imaged in the second double-beam imaging or the third double-beam imaging, then the dislocation in the crystal sample to be classified is determined to be the second dislocation; If the dislocation is extinguished in the first double-beam imaging and imaged in the second double-beam imaging or the third double-beam imaging, and the dislocation line is parallel to the twin interface, then the dislocation in the crystal sample to be classified is determined to be the third dislocation.

[0062] In one embodiment, the analysis module 30 is further configured to: After the step of classifying the dislocations in the crystal sample to be classified by comparing the dual-beam imaging: determining the Burgers vector of each dislocation line based on the classified dislocations.

[0063] The dislocation classification device provided by the present application adopts the dislocation classification method in the above embodiment, which can solve the technical problem that the dislocation classification process is cumbersome and inefficient. Compared with the prior art, the beneficial effects of the dislocation classification device provided by the present application are the same as the beneficial effects of the dislocation classification method provided by the above embodiment, and the other technical features in the dislocation classification device are the same as the features disclosed in the above embodiment method, which will not be repeated here.

[0064] The present application provides a dislocation classification device, which includes: at least one processor; and a memory that is communicatively connected to the at least one processor; wherein the memory stores instructions that can be executed by the at least one processor, and the instructions are executed by the at least one processor so that the at least one processor can execute the dislocation classification method in the above-mentioned embodiment 1.

[0065] Reference below Figure 5 , which shows a schematic diagram of the structure of a dislocation classification device suitable for implementing the embodiment of the present application. The dislocation classification device in the embodiment of the present application may include but is not limited to mobile terminals such as mobile phones, laptop computers, digital broadcast receivers, PDAs (Personal Digital Assistants), PADs (Portable Application Descriptions), PMPs (Portable Media Players), vehicle-mounted terminals (such as vehicle-mounted navigation terminals), etc., and fixed terminals such as digital TVs, desktop computers, etc. Figure 5 The dislocation classification device shown is only an example and should not bring any limitation to the functions and scope of use of the embodiments of the present application.

[0066] like Figure 5As shown, the dislocation classification device may include a processing device 1001 (such as a central processing unit, a graphics processor, etc.), which can perform various appropriate actions and processes according to a program stored in a read-only memory (ROM: Read Only Memory) 1002 or a program loaded from a storage device 1003 to a random access memory (RAM: Random Access Memory) 1004. In RAM1004, various programs and data required for the operation of the dislocation classification device are also stored. The processing device 1001, ROM1002 and RAM1004 are connected to each other through a bus 1005. An input / output (I / O) interface 1006 is also connected to the bus. Generally, the following systems can be connected to the I / O interface 1006: an input device 1007 including, for example, a touch screen, a touch pad, a keyboard, a mouse, an image sensor, a microphone, an accelerometer, a gyroscope, etc.; an output device 1008 including, for example, a liquid crystal display (LCD: Liquid Crystal Display), a speaker, a vibrator, etc.; a storage device 1003 including, for example, a magnetic tape, a hard disk, etc.; and a communication device 1009. The communication device 1009 can allow the dislocation classification device to communicate with other devices wirelessly or by wire to exchange data. Although the dislocation classification device with various systems is shown in the figure, it should be understood that it is not required to implement or have all the systems shown. More or fewer systems can be implemented or have alternatively.

[0067] In particular, according to the embodiments disclosed in the present application, the process described above with reference to the flowchart can be implemented as a computer software program. For example, the embodiments disclosed in the present application include a computer program product, which includes a computer program carried on a computer-readable medium, and the computer program includes a program code for executing the method shown in the flowchart. In such an embodiment, the computer program can be downloaded and installed from a network through a communication device, or installed from a storage device 1003, or installed from a ROM 1002. When the computer program is executed by the processing device 1001, the above-mentioned functions defined in the method of the embodiment disclosed in the present application are executed.

[0068] The dislocation classification device provided by the present application adopts the dislocation classification method in the above embodiment, which can solve the technical problems of cumbersome and inefficient dislocation classification process. Compared with the prior art, the beneficial effects of the dislocation classification device provided by the present application are the same as the beneficial effects of the dislocation classification method provided by the above embodiment, and the other technical features in the dislocation classification device are the same as the features disclosed in the method of the previous embodiment, which will not be repeated here.

[0069] It should be understood that the various parts disclosed in this application can be implemented by hardware, software, firmware or a combination thereof. In the description of the above embodiments, specific features, structures, materials or characteristics can be combined in any one or more embodiments or examples in a suitable manner.

[0070] The above is only a specific implementation of the present application, but the protection scope of the present application is not limited thereto. Any person skilled in the art who is familiar with the present technical field can easily think of changes or substitutions within the technical scope disclosed in the present application, which should be included in the protection scope of the present application. Therefore, the protection scope of the present application should be based on the protection scope of the claims.

[0071] The present application provides a computer-readable storage medium having computer-readable program instructions (ie, computer program) stored thereon, and the computer-readable program instructions are used to execute the dislocation classification method in the above embodiment.

[0072] The computer-readable storage medium provided in the present application may be, for example, a USB flash drive, but is not limited to electrical, magnetic, optical, electromagnetic, infrared, or semiconductor systems or devices, or any combination of the above. More specific examples of computer-readable storage media may include, but are not limited to: an electrical connection with one or more wires, a portable computer disk, a hard disk, a random access memory (RAM: Random Access Memory), a read-only memory (ROM: Read Only Memory), an erasable programmable read-only memory (EPROM: Erasable Programmable Read Only Memory or flash memory), an optical fiber, a portable compact disk read-only memory (CD-ROM: CD-Read Only Memory), an optical storage device, a magnetic storage device, or any suitable combination of the above. In this embodiment, the computer-readable storage medium may be any tangible medium containing or storing a program, which may be used by or in combination with an instruction execution system or device. The program code contained on the computer-readable storage medium may be transmitted using any appropriate medium, including but not limited to: wires, optical cables, RF (Radio Frequency: Radio Frequency), etc., or any suitable combination of the above.

[0073] The computer-readable storage medium may be included in the dislocation classification device; or may exist independently without being assembled into the dislocation classification device.

[0074] The computer-readable storage medium carries one or more programs. When the one or more programs are executed by the dislocation classification device, the dislocation classification device: determines the crystal band axis parallel to the twin interface and the diffraction vector of the crystal band axis of the crystal sample to be classified; tilts the crystal sample to be classified so that the electron beam of the transmission electron microscope is incident along the diffraction vector, and obtains a double-beam image of the crystal sample to be classified; and classifies the dislocations in the crystal sample to be classified by comparing the double-beam images.

[0075] Computer program code for performing the operations of the present application may be written in one or more programming languages ​​or a combination thereof, including object-oriented programming languages ​​such as Java, Smalltalk, C++, and conventional procedural programming languages ​​such as "C" or similar programming languages. The program code may be executed entirely on the user's computer, partially on the user's computer, as a separate software package, partially on the user's computer and partially on a remote computer, or entirely on a remote computer or server. In the case of a remote computer, the remote computer may be connected to the user's computer through any type of network, including a local area network (LAN) or a wide area network (WAN), or may be connected to an external computer (e.g., via the Internet using an Internet service provider).

[0076] The flow chart and block diagram in the accompanying drawings illustrate the possible architecture, function and operation of the system, method and computer program product according to various embodiments of the present application. In this regard, each square box in the flow chart or block diagram can represent a module, a program segment or a part of a code, and the module, the program segment or a part of the code contains one or more executable instructions for realizing the specified logical function. It should also be noted that in some alternative implementations, the functions marked in the square box can also occur in a sequence different from that marked in the accompanying drawings. For example, two square boxes represented in succession can actually be executed substantially in parallel, and they can sometimes be executed in the opposite order, depending on the functions involved. It should also be noted that each square box in the block diagram and / or flow chart, and the combination of the square boxes in the block diagram and / or flow chart can be implemented with a dedicated hardware-based system that performs a specified function or operation, or can be implemented with a combination of dedicated hardware and computer instructions.

[0077] The modules involved in the embodiments described in this application may be implemented by software or hardware, wherein the name of the module does not constitute a limitation on the unit itself in some cases.

[0078] The readable storage medium provided in the present application is a computer-readable storage medium, which stores computer-readable program instructions (i.e., computer programs) for executing the above-mentioned dislocation classification method, and can solve the technical problems of cumbersome and inefficient dislocation classification process. Compared with the prior art, the beneficial effects of the computer-readable storage medium provided in the present application are the same as the beneficial effects of the dislocation classification method provided in the above-mentioned embodiment, and will not be repeated here.

[0079] The present application also provides a computer program product, comprising a computer program, wherein when the computer program is executed by a processor, the steps of the above-mentioned dislocation classification method are implemented.

[0080] The computer program product provided by the present application can solve the technical problem that the dislocation classification process is cumbersome and inefficient. Compared with the prior art, the beneficial effects of the computer program product provided by the present application are the same as the beneficial effects of the dislocation classification method provided by the above embodiment, which will not be repeated here.

[0081] The above descriptions are only some embodiments of the present application, and are not intended to limit the patent scope of the present application. All equivalent structural changes made using the contents of the present application specification and drawings under the technical concept of the present application, or direct / indirect applications in other related technical fields are included in the patent protection scope of the present application.

Claims

1. A dislocation classification method, characterized in that: The dislocation classification method comprises: Determine a crystal zone axis parallel to the twin interface of the crystal sample to be classified, and a diffraction vector of the crystal zone axis; Tilting the crystal sample to be classified so that the electron beam of the transmission electron microscope is incident along the diffraction vector, and photographing to obtain a double-beam image of the crystal sample to be classified; By comparing the dual-beam imaging, the dislocations in the crystal sample to be classified are classified.

2. The dislocation classification method according to claim 1, characterized in that: The step of determining the diffraction vector of the crystal zone axis comprises: Through the diffraction spot results of the crystal zone axis extinction and imaging, the diffraction vector that can be imaged near the crystal zone axis and has the lowest index is determined as the diffraction vector of the crystal zone axis.

3. The dislocation classification method according to claim 2, characterized in that: The diffraction vectors of the crystal zone axis include a first diffraction vector, a second diffraction vector and a third diffraction vector; the step of tilting the crystal sample to be classified so that the electron beam of the transmission electron microscope is incident along the diffraction vector, and photographing and obtaining a double-beam image of the crystal sample to be classified includes: Tilt the crystal sample to be classified for the first time so that the electron beam of the transmission electron microscope is incident along the first diffraction vector, and take a first double-beam image of the crystal sample to be classified; Tilt the crystal sample to be classified for a second time so that the electron beam of the transmission electron microscope is incident along the second diffraction vector, and take a second double-beam image of the crystal sample to be classified; The crystal sample to be classified is tilted for the first time so that the electron beam of the transmission electron microscope is incident along the third diffraction vector, and a third double-beam image of the crystal sample to be classified is obtained by taking pictures.

4. The dislocation classification method according to claim 3, characterized in that: The step of classifying the dislocations in the crystal sample to be classified by comparing the dual-beam imaging comprises: According to the imaging results in the first dual-beam imaging, the second dual-beam imaging and the third dual-beam imaging, it is determined whether the dislocation in the crystal sample to be classified is the first dislocation, the second dislocation or the third dislocation.

5. The dislocation classification method according to claim 4, characterized in that: The step of determining whether the dislocation in the crystal sample to be classified is the first dislocation, the second dislocation or the third dislocation according to the imaging results in the first double-beam imaging, the second double-beam imaging and the third double-beam imaging comprises: If imaging is performed simultaneously in the first dual-beam imaging and the second dual-beam imaging, or imaging is performed simultaneously in the first dual-beam imaging and the third dual-beam imaging, then determining that the dislocation in the crystal sample to be classified is the first dislocation; If the dislocation is extinguished in the first double-beam imaging and imaged in the second double-beam imaging or the third double-beam imaging, then the dislocation in the crystal sample to be classified is determined to be a second dislocation; If the dislocation is extinguished in the first dual-beam imaging and imaged in the second dual-beam imaging or the third dual-beam imaging, and the dislocation line is parallel to the twin interface, then the dislocation in the crystal sample to be classified is determined to be the third dislocation.

6. The dislocation classification method according to claim 1, characterized in that: After the step of classifying the dislocations in the crystal sample to be classified by comparing the dual beam imaging, the step further includes: Based on the classified dislocations, the Burgers vector of each dislocation line is determined.

7. A dislocation classification device, characterized in that: The dislocation classification device comprises: A determination module, used to determine a crystal zone axis parallel to the twin interface of the crystal sample to be classified, and a diffraction vector of the crystal zone axis; An imaging module, used for tilting the crystal sample to be classified so that the electron beam of the transmission electron microscope is incident along the diffraction vector, and photographing to obtain a double-beam imaging of the crystal sample to be classified; The analysis module is used to classify the dislocations in the crystal sample to be classified by comparing the dual-beam imaging.

8. A dislocation classification device, characterized in that The device comprises: a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein the computer program is configured to implement the steps of the dislocation classification method according to any one of claims 1 to 6.

9. A storage medium, characterized in that: The storage medium is a computer-readable storage medium, and a computer program is stored on the storage medium. When the computer program is executed by a processor, the steps of the dislocation classification method according to any one of claims 1 to 6 are implemented.

10. A computer program product, characterized in that The computer program product comprises a computer program, and when the computer program is executed by a processor, the steps of the dislocation classification method according to any one of claims 1 to 6 are implemented.

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