Junction temperature determination method and device for integrated gate commutated thyristor

Abstract

The invention provides a junction temperature determination method and device for an integrated gate commutated thyristor. The junction temperature determination method for the integrated gate commutated thyristor comprises the following steps: establishing a junction temperature model according to historical gate-cathode voltage, historical anode current and corresponding temperature of the integrated gate commutated thyristor; and determining the junction temperature of the integrated gate commutated thyristor according to the junction temperature model, the current gate-cathode voltage of the integrated gate commutated thyristor and the current historical anode current. The invention provides a method for extracting the accurate junction temperature during the IGCT conduction period by measuring the gate-cathode voltage of the IGCT and the anode current of the IGCT. The gate-cathode voltage drop can be measured directly from the IGCT gate unit without any external measurement device and power supply.

Description

Technical Field

[0001] The present invention relates to the technical field of junction temperature monitoring of an integrated gate-commutated thyristor, and in particular to a method and a device for determining the junction temperature of an integrated gate-commutated thyristor. Background Art

[0002] With the development of flexible power transmission technology, the proportion of power electronic equipment in power grids continues to increase. Integrated Gate-Commutated Thyristor (IGCT), as a high-voltage and large-capacity power electronic device, has shown broad application prospects due to its large operating current, low loss, and no need to shut down the absorption circuit. The significance of studying IGCT is to improve the efficiency and stability of the power system, especially in multi-level topology and high-power applications, where accurate monitoring of its junction temperature is crucial. Accurate junction temperature monitoring can not only increase the output power of the system and reduce the risk of overheating, but also optimize the cooling design, reduce cost and volume, thereby promoting the wider application of power electronics technology in flexible direct current grids.

[0003] The traditional method of estimating the maximum junction temperature of a semiconductor device is to calculate the total switching loss of the device plus the conduction loss and its thermal impedance to the environment. Since most data are not accurate, a large safety margin is usually required to cope with the error, thus losing the theoretical maximum output power of the power electronic converter or system. In addition, it is very difficult to obtain the conduction and switching losses of the device in real-time operation. Summary of the invention

[0004] The present invention provides a performance monitoring component for an integrated gate-commutated thyristor and a method for using the same, aiming to overcome the technical pain point of the prior art that the junction temperature of the integrated gate-commutated thyristor is not accurately obtained.

[0005] In order to achieve the above objectives, in a first aspect, the present invention provides a performance monitoring component for an integrated gate-commutated thyristor, comprising:

[0006] Establishing a junction temperature model according to the historical gate-cathode voltage, the historical anode current and the corresponding temperature of the integrated gate-commutated thyristor;

[0007] The junction temperature of the integrated gate-commutated thyristor is determined according to the junction temperature model, the current gate-cathode voltage of the integrated gate-commutated thyristor, and the current historical anode current.

[0008] In some embodiments of the present invention, a method for determining the junction temperature of an integrated gate-commutated thyristor further includes:

[0009] The uncertainty of the junction temperature is determined according to the uncertainty of the historical gate-cathode voltage and the uncertainty of the historical anode current to determine the error of the junction temperature.

[0010] In some embodiments of the present invention, the step of obtaining the current gate-cathode voltage of the integrated gate-commutated thyristor comprises:

[0011] Acquiring the current gate-cathode voltage through the gate driver of the integrated gate-commutated thyristor;

[0012] The junction temperature determination method further includes:

[0013] The historical gate-cathode voltage and the historical anode current are obtained before the integrated gate-commutated thyristor is installed in the converter.

[0014] In some embodiments of the present invention, a method for determining the junction temperature of an integrated gate-commutated thyristor further includes:

[0015] The remaining service life of the integrated gate-commutated thyristor is determined according to the data of the change of the junction temperature over time.

[0016] In a second aspect, the present invention provides a device for determining junction temperature of an integrated gate-commutated thyristor, comprising:

[0017] A junction temperature model building module, used to build a junction temperature model according to the historical gate-cathode voltage, the historical anode current and the corresponding temperature of the integrated gate-commutated thyristor;

[0018] The junction temperature determination module is used to determine the junction temperature of the integrated gate-commutated thyristor according to the junction temperature model, the current gate-cathode voltage of the integrated gate-commutated thyristor and the current historical anode current.

[0019] In some embodiments of the present invention, a device for determining junction temperature of an integrated gate-commutated thyristor further includes:

[0020] The junction temperature error determination module is used to determine the uncertainty of the junction temperature according to the uncertainty of the historical gate-cathode voltage and the uncertainty of the historical anode current, so as to determine the error of the junction temperature.

[0021] In some embodiments of the present invention, a device for determining junction temperature of an integrated gate-commutated thyristor further includes:

[0022] A current voltage acquisition module is used to acquire the current gate-cathode voltage of the integrated gate-commutated thyristor; the current voltage acquisition module comprises:

[0023] A current voltage acquisition unit, used for acquiring the current gate-cathode voltage through the gate driver of the integrated gate-commutated thyristor;

[0024] The junction temperature determining device further comprises:

[0025] The historical voltage acquisition module is used to acquire the historical gate-cathode voltage and the historical anode current before the integrated gate-commutated thyristor is installed in the converter.

[0026] In some embodiments of the present invention, a device for determining junction temperature of an integrated gate-commutated thyristor further includes:

[0027] The remaining use time determination module is used to determine the remaining use time of the integrated gate-commutated thyristor according to the junction temperature change data over time.

[0028] In a third aspect, the present invention provides a computer program product, comprising a computer program / instruction, which, when executed by a processor, implements the steps of a method for determining the junction temperature of an integrated gate-commutated thyristor.

[0029] In a fourth aspect, the present invention provides an electronic device, comprising a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein when the processor executes the program, steps of a method for determining the junction temperature of an integrated gate-commutated thyristor are implemented.

[0030] In a fifth aspect, the present invention provides a computer-readable storage medium having a computer program stored thereon, which, when executed by a processor, implements the steps of a method for determining the junction temperature of an integrated gate-commutated thyristor.

[0031] From the above description, it can be seen that an embodiment of the present invention provides a method and device for determining the junction temperature of an integrated gate-commutated thyristor, and the corresponding method for determining the junction temperature of an integrated gate-commutated thyristor includes: first, establishing a junction temperature model based on the historical gate-cathode voltage, historical anode current and corresponding temperature of the integrated gate-commutated thyristor; then, determining the junction temperature of the integrated gate-commutated thyristor based on the junction temperature model, the current gate-cathode voltage of the integrated gate-commutated thyristor and the current historical anode current.

[0032] In summary, the present invention provides a method for extracting the accurate junction temperature during the conduction period of an IGCT by measuring the gate-cathode voltage of the IGCT and the IGCT anode current. The gate-cathode voltage drop can be measured directly from the IGCT gate cell without any external measurement equipment and power supply (no additional current or voltage source is required). BRIEF DESCRIPTION OF THE DRAWINGS

[0033] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0034] Figure 1 A schematic diagram of a method for determining the junction temperature of an integrated gate-commutated thyristor provided in an embodiment of the present invention Figure 1 ;

[0035] Figure 2 A schematic diagram of a method for determining the junction temperature of an integrated gate-commutated thyristor provided in an embodiment of the present invention Figure 2 ;

[0036] Figure 3 A schematic diagram of a method for determining the junction temperature of an integrated gate-commutated thyristor provided in an embodiment of the present invention Figure 3 ;

[0037] Figure 4 A flowchart of step 400 provided in an embodiment of the present invention;

[0038] Figure 5 A schematic diagram of a method for determining the junction temperature of an integrated gate-commutated thyristor provided in an embodiment of the present invention Figure 4 ;

[0039] Figure 6 A schematic diagram of a method for determining the junction temperature of an integrated gate-commutated thyristor provided in an embodiment of the present invention Figure 4 ;

[0040] Figure 7 A junction temperature monitoring logic structure diagram provided in a specific application example of the present invention;

[0041] Figure 8 The gate-cathode voltage V provided in the specific application example of the present invention GK , anode current IA and temperature T vj The polynomial function relationship graph of ;

[0042] Fig. 9 A schematic diagram of a junction temperature determination device for an integrated gate-commutated thyristor provided in an embodiment of the present invention Figure 1 ;

[0043] Fig.10 A schematic diagram of a junction temperature determination device for an integrated gate-commutated thyristor provided in an embodiment of the present invention Figure 2 ;

[0044] Fig.11 A schematic diagram of a junction temperature determination device for an integrated gate-commutated thyristor provided in an embodiment of the present invention Figure 3 ;

[0045] Fig.12 It is a structural schematic diagram of the current voltage acquisition module 40 provided in an embodiment of the present invention;

[0046] Fig.13 A schematic diagram of a junction temperature determination device for an integrated gate-commutated thyristor provided in an embodiment of the present invention Figure 4 ;

[0047] Fig.14 A schematic diagram of a junction temperature determination device for an integrated gate-commutated thyristor provided in an embodiment of the present invention Figure 5 ;

[0048] Fig.15 It is a schematic diagram of the structure of an electronic device in an embodiment of the present invention. DETAILED DESCRIPTION

[0049] In order to make the purpose, technical solution and advantages of the embodiments of the present invention clearer, the technical solution in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0050] Those skilled in the art will appreciate that embodiments of the present invention may be provided as methods, systems, or computer program products. Therefore, the present invention may take the form of a complete hardware embodiment, a complete software embodiment, or an embodiment combining software and hardware. Moreover, the present invention may take the form of a computer program product implemented on one or more computer-usable storage media (including but not limited to disk storage, CD-ROM, optical storage, etc.) containing computer-usable program code.

[0051] It should be noted that the terms "including" and "having" and any variations thereof in the specification and claims of the present application and the above-mentioned drawings are intended to cover non-exclusive inclusions. For example, a process, method, system, product or apparatus comprising a series of steps or units is not necessarily limited to those steps or units clearly listed, but may include other steps or units that are not clearly listed or inherent to these processes, methods, products or apparatuses.

[0052] It should be noted that, in the absence of conflict, the embodiments and features in the embodiments of the present application can be combined with each other. The present application will be described in detail below with reference to the accompanying drawings and in combination with the embodiments.

[0053] In the prior art, there are the following methods for estimating the junction temperature of an IGBT in real-time operation, such as based on the dv / dt when the device is turned off or the V GE Waveform(V GE The width of the Miller platform in the waveform is related to the junction temperature T of the IGBT chipvj There are also methods proposed to extract the accurate junction temperature of GTO (also applicable to IGCT), but these methods can only be used when the device is turned off or just after the turn-off event, not during the device turn-on period. In low switching frequency and high power applications, the IGCT is on for a long time, so it is important to extract the accurate junction temperature during the turn-on period.

[0054] Extracting the accurate junction temperature of semiconductor devices during converter operation is of great significance to the design and operation of power converters. For example, the thermal resistance value of modules or semiconductors calculated based on thermal networks is usually inaccurate and may change during converter operation, so a certain safety margin must be reserved and the cooling system must be overdesigned to ensure reliable operation of the power converter. This leads to increased size, weight and cost, while limiting the converter's ability to fully utilize the output power.

[0055] Based on the above reasons, an embodiment of the present invention provides a specific implementation method of a method for determining the junction temperature of an integrated gate-commutated thyristor. Figure 1 The method for determining the junction temperature of the integrated gate-commutated thyristor specifically includes the following contents:

[0056] Step 100: Establishing a junction temperature model according to the historical gate-cathode voltage, the historical anode current and the corresponding temperature of the integrated gate-commutated thyristor;

[0057] Step 200: Determine the junction temperature of the integrated gate-commutated thyristor according to the junction temperature model, the current gate-cathode voltage of the integrated gate-commutated thyristor, and the current historical anode current.

[0058] From the above description, it can be seen that an embodiment of the present invention provides a method for determining the junction temperature of an integrated gate-commutated thyristor, including: first, establishing a junction temperature model according to the historical gate-cathode voltage, the historical anode current and the corresponding temperature of the integrated gate-commutated thyristor; then, determining the junction temperature of the integrated gate-commutated thyristor according to the junction temperature model, the current gate-cathode voltage and the current historical anode current of the integrated gate-commutated thyristor.

[0059] In summary, the present invention provides a method for measuring the gate-cathode voltage of IGCT and the anode current I of IGCT. A The gate-cathode voltage drop can be measured directly from the IGCT gate cell without any external measurement equipment and power supply (no additional current or voltage source is required).

[0060] In some embodiments of the present invention, the integrated gate-commutated thyristor in step 100 is a crimped IGCT, and its working principle is roughly as follows: when the IGCT is working, its conduction and shutdown are controlled by the gate signal. During the conduction process, the IGCT is similar to a traditional thyristor and can carry high current. When it needs to be turned off, the gate drive circuit quickly removes the carriers, causing the device to turn off quickly. The fast turn-off characteristics of the IGCT are mainly attributed to its integrated gate drive circuit and optimized internal structure. The characteristics and advantages of the IGCT include:

[0061] High Current and High Voltage Capabilities: IGCTs are capable of handling very high currents and voltages and are suitable for high power applications.

[0062] Low conduction loss: In the on state, the IGCT has a low conduction voltage drop, resulting in low conduction loss.

[0063] Fast switching: IGCT has fast switching capability and can complete the transition from on to off in a short time.

[0064] High reliability: Due to its rugged structure and high tolerance, IGCT exhibits high reliability in harsh industrial environments.

[0065] Simple drive circuit: Compared with traditional thyristors, the gate drive circuit of IGCT is simpler, which simplifies system design.

[0066] The gate-cathode voltage refers to the voltage between the gate and cathode of the IGCT. Its main function is to control the on and off state of the IGCT.

[0067] On-state: When sufficient positive gate-to-cathode voltage (usually between 10V and 20V) is applied, the IGCT enters the on-state, allowing current to flow from the anode to the cathode.

[0068] Off state: When the gate-cathode voltage drops to zero or a negative voltage is applied, the IGCT enters the off state, preventing current from flowing.

[0069] Anode current refers to the current flowing between the anode and cathode of an IGCT. IGCTs are designed to handle high currents, up to several thousand amperes, depending on the specific model and application environment.

[0070] When on: the anode current is the main working current, and the IGCT can withstand and conduct large currents when in the on state.

[0071] When shutting down: the anode current should drop to zero, and the IGCT enters the blocking state, able to withstand high voltage without conducting current.

[0072] In addition, it should be noted that step 100 is performed before the converter is installed, while step 200 is performed after the converter is installed.

[0073] Step 200 is implemented by a preset microcontroller that implements a junction temperature model for extracting the junction temperature from the measured values ​​of the gate-cathode voltage and the anode current. The IGCT is usually operated in an inverter unit of a medium voltage drive (MVD). The digital value of the gate-cathode voltage is transmitted to the main controller of the converter, and the controller estimates the junction temperature based on the current currently passing through the device and the polynomial function of the relevant IGCT.

[0074] In some embodiments of the present invention, see Figure 2 , a method for determining the junction temperature of an integrated gate-commutated thyristor, further comprising:

[0075] Step 300: Determine the uncertainty of the junction temperature according to the uncertainty of the historical gate-cathode voltage and the uncertainty of the historical anode current to determine the error of the junction temperature.

[0076] According to the uncertainty propagation principle, the uncertainty of the proposed method can be calculated as shown in the following formula.

[0077]

[0078] Under current technical conditions, the gate-cathode voltage measurement uncertainty is about ±5mV, and the anode current measurement uncertainty is about ±20A, thereby achieving the target uncertainty of ±5°C, which is feasible.

[0079] Uncertainty propagation principle: When making a measurement, each physical quantity obtained has an uncertainty, which is usually caused by factors such as the accuracy of the measuring instrument, experimental conditions or operating limitations. When multiple quantities are combined for calculation, the uncertainty of these individual quantities will be transferred to the final result through certain mathematical rules. Uncertainty propagation describes how the error from the measurement result to the final calculation result is transferred and accumulated.

[0080] In some embodiments of the present invention, see Figure 3 , a method for determining the junction temperature of an integrated gate-commutated thyristor, further comprising:

[0081] Step 400: Obtain the current gate-cathode voltage of the integrated gate-commutated thyristor; further, see Figure 4 , step 400 comprises:

[0082] Step 401: obtaining the current gate-cathode voltage through the gate driver of the integrated gate-commutated thyristor;

[0083] In some embodiments of the present invention, see Figure 5 , a method for determining the junction temperature of an integrated gate-commutated thyristor, further comprising:

[0084] Step 500: Before the integrated gate-commutated thyristor is installed in a converter, the historical gate-cathode voltage and the historical anode current are obtained.

[0085] In some embodiments of the present invention, see Figure 6 , a method for determining the junction temperature of an integrated gate-commutated thyristor, further comprising:

[0086] Step 600: Determine the remaining service life of the integrated gate-commutated thyristor according to the data of the junction temperature change over time.

[0087] It is understandable that the method for determining the junction temperature of an integrated gate-commutated thyristor provided in the embodiment of the present application is applicable in principle to any application in which the anode current of the IGCT can be measured, so that the temperature change of the IGCT can be tracked during operation and its remaining life can be estimated. From an industrial perspective, accurate prediction of component life can achieve efficient scheduling of converter maintenance, thereby reducing downtime and improving overall availability.

[0088] From the above description, it can be seen that an embodiment of the present invention provides a method for determining the junction temperature of an integrated gate-commutated thyristor, including: first, establishing a junction temperature model according to the historical gate-cathode voltage, the historical anode current and the corresponding temperature of the integrated gate-commutated thyristor; then, determining the junction temperature of the integrated gate-commutated thyristor according to the junction temperature model, the current gate-cathode voltage and the current historical anode current of the integrated gate-commutated thyristor.

[0089] In summary, the present invention proposes a method for controlling the gate-cathode voltage of an IGCT and the anode current I A The advantages and innovations of the present invention are as follows:

[0090] (1) The present invention can monitor the junction temperature of the device in the on state in real time, which is beneficial to the device status evaluation and estimation of its remaining life, thereby improving reliability.

[0091] (2) The entire junction temperature measurement scheme does not require additional hardware, thus avoiding the problem of increasing the size of the converter, and can be implemented directly on the gate unit of the device.

[0092] (3) Because this method provides an accurate estimate of the junction temperature, the power electronic converter or system can be operated at an output power closer to the theoretical limit because the required error safety margin is reduced compared to traditional methods.

[0093] To further illustrate the present solution, the present invention provides a specific application example of a method for determining the junction temperature of an integrated gate-commutated thyristor, which specifically includes the following contents.

[0094] First, the present application provides a system for determining the junction temperature of an integrated gate-commutated thyristor. The system aims to measure the gate-cathode voltage V of the IGCT in real time by measuring and calculating the polynomial function relationship between the gate-cathode voltage and the temperature of the IGCT in advance. GK , IGCT anode current I A , and after data processing and analysis, it finally provides an accurate estimate of the junction temperature in the on state. The system includes:

[0095] 1. Perception layer.

[0096] The IGCT gate driver integrates a voltage and current measurement system that is directly connected to the driver.

[0097] 2. Data processing layer.

[0098] ADC: Converts the gate-to-cathode voltage measured directly from the gate driver into a digital value.

[0099] Microprocessor: The microcontroller implements a polynomial function to extract the junction temperature from the measurements of gate-cathode voltage and anode current.

[0100] 3. Result display layer.

[0101] Result display module: displays the results processed by the data analysis module in a visual way, including data charts, status indicators, etc., so that users can intuitively understand the working status of the device.

[0102] Next, see Figure 7 Based on the above-mentioned system for determining the junction temperature of an integrated gate-commutated thyristor, a specific application example of a method for determining the junction temperature of an integrated gate-commutated thyristor provided in the present application includes the following contents.

[0103] 1. First, the gate-cathode voltage V at different temperatures is measured before the IGCT is installed in the converter. GK , anode current I A Measure and get Figure 8 After the function graph of T vj =f(V GK ,I A )=a0+a1I A +a2I 2 A +a3V GK +a4V 2 GK +a5I A V GKGet IGCT gate-cathode voltage V GK , anode current I A The polynomial function relationship with temperature (where a i extracted by the least squares method).

[0104] According to the uncertainty propagation principle, the uncertainty of the proposed method can be calculated as shown below.

[0105]

[0106] Under current technical conditions, the gate-cathode voltage measurement uncertainty is about ±5mV, and the anode current measurement uncertainty is about ±20A, thereby achieving the target uncertainty of ±5°C, which is feasible.

[0107] 2. The gate-cathode voltage can be measured directly at the gate driver because the gate cell is directly connected to the gate and cathode terminals. This voltage can be converted into a digital value by an ADC with the required accuracy. For example, using a 10-bit ADC with a 2.8V supply and an accuracy of ±1 least significant bit, the accuracy is 2.73mV, which is calculated as follows:

[0108]

[0109] 3. The digital value can then be processed by a microcontroller that implements a polynomial function to extract the junction temperature from the measured values ​​of the gate-cathode voltage and the anode current. IGCTs are typically operated in the inverter unit of a medium voltage drive (MVD). The digital value of the gate-cathode voltage is transmitted to the main controller of the converter, which estimates the junction temperature based on the current currently passing through the device and the polynomial function of the associated IGCT.

[0110] The above implementation is applicable in principle to any application where the IGCT anode current can be measured, so the temperature evolution of the IGCT can be tracked during operation and its remaining lifetime can be estimated. From an industrial perspective, accurate prediction of component lifetime can enable efficient scheduling of converter maintenance, thereby reducing downtime and improving overall availability.

[0111] From the above description, it can be seen that a method for determining the junction temperature of an integrated gate-commutated thyristor provided by a specific application example of the present invention includes: first, establishing a junction temperature model according to the historical gate-cathode voltage, the historical anode current and the corresponding temperature of the integrated gate-commutated thyristor; then, determining the junction temperature of the integrated gate-commutated thyristor according to the junction temperature model, the current gate-cathode voltage of the integrated gate-commutated thyristor and the current historical anode current.

[0112] In summary, the present invention proposes a method for controlling the gate-cathode voltage of an IGCT and the anode current I AThe advantages and innovations of the present invention are as follows:

[0113] (1) The present invention can monitor the junction temperature of the device in the on state in real time, which is beneficial to the device status evaluation and estimation of its remaining life, thereby improving reliability.

[0114] (2) The entire junction temperature measurement scheme does not require additional hardware, thus avoiding the problem of increasing the size of the converter, and can be implemented directly on the gate unit of the device.

[0115] (3) Because this method provides an accurate estimate of the junction temperature, the power electronic converter or system can be operated at an output power closer to the theoretical limit because the required error safety margin is reduced compared to traditional methods.

[0116] Based on the same inventive concept, the embodiments of the present application also provide a junction temperature determination device for an integrated gate-commutated thyristor, which can be used to implement the method described in the above embodiments, such as the following embodiments. Since the principle of solving the problem by the junction temperature determination device for an integrated gate-commutated thyristor is similar to the junction temperature determination method for an integrated gate-commutated thyristor, the implementation of the junction temperature determination device for an integrated gate-commutated thyristor can refer to the implementation of the junction temperature determination method for an integrated gate-commutated thyristor, and the repeated parts will not be repeated. As used below, the term "unit" or "module" can be a combination of software and / or hardware that implements a predetermined function. Although the system described in the following embodiments is preferably implemented in software, the implementation of hardware, or a combination of software and hardware, is also possible and conceived.

[0117] The embodiment of the present invention provides a specific implementation of a device for determining the junction temperature of an integrated gate-commutated thyristor capable of implementing a method for determining the junction temperature of an integrated gate-commutated thyristor, see Fig. 9 , the using device comprises:

[0118] A junction temperature model building module 10, for building a junction temperature model according to the historical gate-cathode voltage, the historical anode current and the corresponding temperature of the integrated gate-commutated thyristor;

[0119] The junction temperature determination module 20 is used to determine the junction temperature of the integrated gate-commutated thyristor according to the junction temperature model, the current gate-cathode voltage of the integrated gate-commutated thyristor and the current historical anode current.

[0120] In some embodiments of the present invention, see Fig.10 , a junction temperature determination device for an integrated gate-commutated thyristor, further comprising:

[0121] The junction temperature error determination module 30 is used to determine the uncertainty of the junction temperature according to the uncertainty of the historical gate-cathode voltage and the uncertainty of the historical anode current, so as to determine the error of the junction temperature.

[0122] In some embodiments of the present invention, see Fig.11 , a junction temperature determination device for an integrated gate-commutated thyristor, further comprising:

[0123] The current voltage acquisition module 40 is used to acquire the current gate-cathode voltage of the integrated gate-commutated thyristor; see Fig.12 , the current voltage acquisition module 40 includes:

[0124] A current voltage acquisition unit 40a, configured to acquire the current gate-cathode voltage through the gate driver of the integrated gate-commutated thyristor;

[0125] See also Fig.13 , the junction temperature determining device further comprises:

[0126] The historical voltage acquisition module 50 is used to acquire the historical gate-cathode voltage and the historical anode current before the integrated gate-commutated thyristor is installed in the converter.

[0127] In some embodiments of the present invention, see Fig.14 , a junction temperature determination device for an integrated gate-commutated thyristor, further comprising:

[0128] The remaining use time determination module 60 is used to determine the remaining use time of the integrated gate-commutated thyristor according to the data of the change of the junction temperature over time.

[0129] From the above description, it can be seen that an embodiment of the present invention provides a junction temperature determination device for an integrated gate-commutated thyristor, comprising: a junction temperature model establishment module, used to establish a junction temperature model according to the historical gate-cathode voltage, historical anode current and corresponding temperature of the integrated gate-commutated thyristor; a junction temperature determination module, used to determine the junction temperature of the integrated gate-commutated thyristor according to the junction temperature model, the current gate-cathode voltage of the integrated gate-commutated thyristor and the current historical anode current.

[0130] In summary, the present invention proposes a method for controlling the gate-cathode voltage of an IGCT and the anode current I A The advantages and innovations of the present invention are as follows:

[0131] (1) The present invention can monitor the junction temperature of the device in the on state in real time, which is beneficial to the device status evaluation and estimation of its remaining life, thereby improving reliability.

[0132] (2) The entire junction temperature measurement scheme does not require additional hardware, thus avoiding the problem of increasing the size of the converter, and can be implemented directly on the gate unit of the device.

[0133] (3) Because this method provides an accurate estimate of the junction temperature, the power electronic converter or system can be operated at an output power closer to the theoretical limit because the required error safety margin is reduced compared to traditional methods.

[0134] The embodiment of the present application also provides a specific implementation of an electronic device capable of implementing all steps in the method for determining the junction temperature of an integrated gate-commutated thyristor in the above embodiment, see Fig.15 , electronic equipment specifically includes the following:

[0135] Processor (processor) 1201, memory (memory) 1202, communication interface (CommunicationsInterface) 1203 and bus 1204;

[0136] The processor 1201 , the memory 1202 , and the communication interface 1203 communicate with each other via the bus 1204 ; the communication interface 1203 is used to realize information transmission between relevant devices such as the server-side device, the power measurement device, and the user-side device.

[0137] The processor 1201 is used to call the computer program in the memory 1202. When the processor executes the computer program, all the steps in the method for determining the junction temperature of the integrated gate-commutated thyristor in the above embodiment are implemented. For example, when the processor executes the computer program, the following steps are implemented:

[0138] Step 100: Establishing a junction temperature model according to the historical gate-cathode voltage, the historical anode current and the corresponding temperature of the integrated gate-commutated thyristor;

[0139] Step 200: Determine the junction temperature of the integrated gate-commutated thyristor according to the junction temperature model, the current gate-cathode voltage of the integrated gate-commutated thyristor, and the current historical anode current.

[0140] The embodiments of the present application also provide a computer-readable storage medium capable of implementing all the steps in the method for determining the junction temperature of an integrated gate-commutated thyristor in the above embodiments. The computer-readable storage medium stores a computer program. When the computer program is executed by a processor, all the steps in the method for determining the junction temperature of an integrated gate-commutated thyristor in the above embodiments are implemented. For example, when the processor executes the computer program, the following steps are implemented:

[0141] Step 100: Establishing a junction temperature model according to the historical gate-cathode voltage, the historical anode current and the corresponding temperature of the integrated gate-commutated thyristor;

[0142] Step 200: Determine the junction temperature of the integrated gate-commutated thyristor according to the junction temperature model, the current gate-cathode voltage of the integrated gate-commutated thyristor, and the current historical anode current.

[0143] Each embodiment in this specification is described in a progressive manner, and the same or similar parts between the embodiments can be referred to each other, and each embodiment focuses on the differences from other embodiments. In particular, for the hardware + program embodiment, since it is basically similar to the method embodiment, the description is relatively simple, and the relevant parts can be referred to the partial description of the method embodiment.

[0144] The above is a description of a specific embodiment of the specification. Other embodiments are within the scope of the appended claims. In some cases, the actions or steps recorded in the claims can be performed in an order different from that in the embodiments and still achieve the desired results. In addition, the processes depicted in the drawings do not necessarily require the specific order or continuous order shown to achieve the desired results. In some embodiments, multitasking and parallel processing are also possible or may be advantageous.

[0145] Although the present application provides method operation steps such as embodiments or flow charts, more or fewer operation steps may be included based on conventional or non-creative labor. The order of steps listed in the embodiments is only one way of executing the order of many steps and does not represent the only execution order. When the actual device or client product is executed, it can be executed in the order of the method shown in the embodiments or the drawings or in parallel (for example, in a parallel processor or multi-threaded processing environment).

[0146] The present invention is described with reference to flowcharts and / or block diagrams of methods, devices (systems), and computer program products according to embodiments of the present invention. It should be understood that each process and / or block in the flowchart and / or block diagram, as well as the combination of processes and / or blocks in the flowchart and / or block diagram, can be implemented by computer program instructions. These computer program instructions can be provided to a processor of a general-purpose computer, a special-purpose computer, an embedded processor, or other programmable data processing device to produce a machine, so that the instructions executed by the processor of the computer or other programmable data processing device generate instructions for implementing the processes in the flowchart and / or block diagram. Figure 1 A process or multiple processes and / or boxes Figure 1 A device that provides the functions specified in a block or multiple blocks.

[0147] These computer program instructions may also be stored in a computer-readable memory capable of directing a computer or other programmable data processing device to operate in a specific manner, so that the instructions stored in the computer-readable memory produce an article of manufacture comprising an instruction device, which implements the process Figure 1 A process or multiple processes and / or boxes Figure 1 A function specified in one or more boxes.

[0148] These computer program instructions can also be loaded onto a computer or other programmable data processing device so that a series of operating steps are executed on the computer or other programmable device to produce a computer-implemented process, thereby providing instructions for implementing the process. Figure 1 A process or multiple processes and / or boxes Figure 1 The steps for the functions specified in one or more boxes.

[0149] The present invention uses specific embodiments to illustrate the principles and implementation methods of the present invention. The description of the above embodiments is only used to help understand the method of the present invention and its core idea. At the same time, for those skilled in the art, according to the idea of ​​the present invention, there will be changes in the specific implementation methods and application scope. In summary, the content of this specification should not be understood as a limitation on the present invention.

Claims

1. A method for determining the junction temperature of an integrated gate-commutated thyristor, characterized in that: include: Establishing a junction temperature model according to the historical gate-cathode voltage, the historical anode current and the corresponding temperature of the integrated gate-commutated thyristor; The junction temperature of the integrated gate-commutated thyristor is determined according to the junction temperature model, the current gate-cathode voltage of the integrated gate-commutated thyristor, and the current historical anode current.

2. The method for determining junction temperature according to claim 1, characterized in that: Also includes: The uncertainty of the junction temperature is determined according to the uncertainty of the historical gate-cathode voltage and the uncertainty of the historical anode current to determine the error of the junction temperature.

3. The method for determining junction temperature according to claim 1, characterized in that: The step of obtaining the current gate-cathode voltage of the integrated gate-commutated thyristor comprises: Acquiring the current gate-cathode voltage through the gate driver of the integrated gate-commutated thyristor; The junction temperature determination method further includes: The historical gate-cathode voltage and the historical anode current are obtained before the integrated gate-commutated thyristor is installed in the converter.

4. The method for determining junction temperature according to claim 1, characterized in that: Also includes: The remaining service life of the integrated gate-commutated thyristor is determined according to the data of the change of the junction temperature over time.

5. A device for determining junction temperature of an integrated gate-commutated thyristor, characterized in that: include: A junction temperature model building module, used to build a junction temperature model according to the historical gate-cathode voltage, the historical anode current and the corresponding temperature of the integrated gate-commutated thyristor; The junction temperature determination module is used to determine the junction temperature of the integrated gate-commutated thyristor according to the junction temperature model, the current gate-cathode voltage of the integrated gate-commutated thyristor and the current historical anode current.

6. The junction temperature determination device according to claim 5, characterized in that: Also includes: The junction temperature error determination module is used to determine the uncertainty of the junction temperature according to the uncertainty of the historical gate-cathode voltage and the uncertainty of the historical anode current, so as to determine the error of the junction temperature.

7. The junction temperature determination device according to claim 5, characterized in that: Also includes: A current voltage acquisition module, used to acquire the current gate-cathode voltage of the integrated gate-commutated thyristor; The current voltage acquisition module comprises: A current voltage acquisition unit, used for acquiring the current gate-cathode voltage through the gate driver of the integrated gate-commutated thyristor; The junction temperature determination method further includes: The historical gate-cathode voltage and the historical anode current are obtained before the integrated gate-commutated thyristor is installed in the converter.

8. The junction temperature determination device according to claim 5, characterized in that: Also includes: The remaining use time determination module is used to determine the remaining use time of the integrated gate-commutated thyristor according to the junction temperature change data over time.

9. A computer program product comprising a computer program / instructions, characterized in that When the computer program / instruction is executed by a processor, the steps of the method for determining the junction temperature of an integrated gate-commutated thyristor according to any one of claims 1 to 4 are implemented.

10. An electronic device comprising a memory, a processor, and a computer program stored in the memory and executable on the processor, characterized in that: When the processor executes the program, the steps of the method for determining the junction temperature of an integrated gate-commutated thyristor according to any one of claims 1 to 4 are implemented.

11. A computer-readable storage medium having a computer program stored thereon, characterized in that: When the computer program is executed by a processor, the steps of the method for determining the junction temperature of an integrated gate-commutated thyristor according to any one of claims 1 to 4 are implemented.

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