Method for matching and debugging hot spots in photoetching process
In the integrated circuit manufacturing process, the matching and debugging of lithography process hotspots is solved by using OPC lithography model and matching templates, and the problem of waste of resources and debugging time in the matching and debugging process of lithography process hotspots is solved, and efficient debugging and correction are achieved.
Patent Information
- Application Number
- CN202311178920.8
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2023-09-13
- Publication Date
- 2025-03-14
AI Technical Summary
In the integrated circuit manufacturing process, there are problems such as wasting resources and long debugging time during the matching and debugging of lithography process, especially in the process of graphics matching and OPC correction.
By obtaining layout files with hot spots, performing preliminary debugging of OPC lithography model, simulation and obtaining core hot spot areas, selecting any point in the core hot spot area as marking, forming a matching template, and using this template to expand, shrink and iteratively match in the layout file, obtaining the target graphics and OPC corrections.
This method effectively reduces debugging time, improves debugging efficiency, and avoids the situation where boundaries cannot be expanded to preset sizes due to noise graphics.
Smart Images
Figure CN119620550A_ABST
Abstract
Description
Technical Field
[0001] The invention relates to the technical field of semiconductor integrated circuits, and in particular to a method for matching and debugging hot spots in a photolithography process. Background Art
[0002] In the integrated circuit manufacturing process, in order to smoothly transfer the pattern of the integrated circuit to the wafer, a mask is first made according to the designed layout, and then the pattern on the mask is transferred to the wafer through photolithography. Due to the influence of the optical proximity effect (OPE) in sub-wavelength photolithography, when the densely arranged mask circuit pattern is exposed and finally transferred to the wafer, a large distortion will be generated, such as right-angled corner rounded, line end shortened, and line width increase / decrease, which are common defects caused by the optical proximity effect when the mask circuit pattern is transferred to the wafer. Although various resolution enhancement technologies (RET) such as optical proximity correction (OPC) and phase shift mask (PSM) can be used to improve the accuracy of lithography, due to improper design or limitations of RET technology itself, the circuit on the final wafer may still have defects such as line pinch, line bridge, hole overlap missing, etc. The graphic structure with these defects is called lithography process hotspot, and the area where these defects are located is called lithography process hotspot area, which may affect the performance of the final circuit and even cause functional failure.
[0003] To this end, the industry usually builds a defect pattern library to avoid structures similar to those in the defect library when designing a new mask layout. The defect pattern library is usually built by exposing a test layout on an actual silicon wafer and then finding the corresponding photolithography process hotspots. In actual operation, due to the need to search the layout, the pattern matching process will consume a lot of resources, unreasonable algorithms will output many useless graphics or non-convergent results, and increase debugging time. Summary of the invention
[0004] The purpose of the present invention is to provide a method for matching and debugging hot spots in a photolithography process, which reduces debugging time and improves debugging efficiency.
[0005] In order to solve the above technical problems, the present invention provides a method for matching and debugging hot spots in a lithography process, comprising the following steps:
[0006] S1: Obtain a layout file with hot spots, and substitute it into the preliminary debugging program of the OPC lithography model to obtain the approximate location information of the hot spot pattern, and perform simulation to obtain the core hot spot area, and select any point in the core hot spot area as a mark;
[0007] S2: taking the mark as the center of the circle and intercepting a circular area in the layout file with the hotspot with a preset radius to form a matching template;
[0008] S3: using the matching template, matching is performed in the layout file with hot spots based on preset expansion, contraction conditions and iteration conditions to obtain a target graphic, and the target graphic is imported into the OPC database;
[0009] S4: performing OPC correction on the target graphic in the OPC database to obtain an OPC program;
[0010] S5: Using the OPC program to completely correct the layout file with hot spots.
[0011] Optionally, in S1 and S2, the approximate area of the hotspot is identified based on the coordinate position information of the hotspot in the layout file with the hotspot, the approximate area is simulated, the most dangerous distance and the surrounding graphics reaching the most dangerous distance position are obtained, and the core hotspot area is defined according to preset conditions; with any point in the core hotspot area as the center of the circle and a preset r as the radius, the layout file with the hotspot is cut and separated to form a pre-anchored area graphic as a matching template, where r>0.
[0012] Optionally, the specific steps of using the matching template to match the layout file with hot spots based on preset expansion and contraction conditions include:
[0013] The core hot spot area is formed by the area between at least the first figure and the second figure in the matching template, the shortest distance between the first figure and the second figure forms the most dangerous distance, wherein the first side in the first figure connected to the core hot spot area is less than or equal to the second side in the second figure connected to the core hot spot area, the first side is projected onto the second side to obtain a subtended projection point, and the second side is cut at the projection point to form a projection line segment;
[0014] The projection line segment and other edges of the second figure other than the second edge, as well as all edges of the first figure, are expanded or shrunk along a direction perpendicular to each edge with a preset size to obtain a matching range, wherein the matching range includes all figures covered by the expanded or shrunk size.
[0015] Optionally, after forming the matching model and before performing matching, the method further includes:
[0016] Determine whether the lithography process has changed. If so, establish a new lithography model based on the new lithography process, use the new lithography model to perform simulation again, update the most dangerous distance to the new most dangerous distance, and update the matching template corresponding to the new most dangerous distance; if the lithography process has not changed, do not update the matching template.
[0017] Optionally, the size of the image expanded or contracted in a direction perpendicular to each edge is determined by a floating process condition.
[0018] Optionally, the specific steps of using the matching template to perform matching based on iteration conditions in the layout file with hot spots include:
[0019] Using the matching template, globally matching the layout file with hot spots to obtain the target graphic;
[0020] The radius is gradually increased outward with the center of the graphic of the matching template as the center until the iteration stop condition is terminated. All process graphics presented in the circle corresponding to the radius in all processes covered during the period participate in the global matching with their corresponding matching ranges, and the graphics in the layout file with hotspots that are identical to the graphics in the process with the matching range are defined as the target graphics.
[0021] Optionally, the iteration stop condition includes: when a preset number of iterations is reached; and / or,
[0022] When a graphic that successfully matches the matching template in the process of gradually improving the matching range by expanding outwards, a graphic in the layout file with hotspots that fails to match within the matching range in the matching template appears for the first time.
[0023] Optionally, the target graphic is imported into the OPC database, compared with existing graphics in the OPC database, and deduplication is performed.
[0024] Optionally, after forming the matching template and before performing matching, the method further includes:
[0025] Importing the matching template into the OPC database;
[0026] The matching template is used to perform graphic matching on the graphics stored in the OPC database, and a deduplication operation is performed on the graphics that are matched to be exactly the same.
[0027] Optionally, after performing the deduplication operation and before performing the matching, the method further includes: checking the OPC database, and if the OPC database is empty, continuing to execute step S2; if the OPC database is not empty, performing the matching.
[0028] To sum up, in the method for matching and debugging hot spots in lithography processes provided by the present invention, a layout file with hot spots is first obtained, and substituted into the preliminary debugging program of the OPC lithography model to obtain the approximate position information of the hot spot graphic, and a simulation is performed to obtain the core hot spot area, and any point in the core hot spot area is selected as a mark, and then the mark is used as the center of the circle, and a circular area is intercepted in the layout file with the hot spot with a preset radius to form a matching template, and then the matching template is used to match the layout file with the hot spot based on preset expansion, contraction conditions and iteration conditions to obtain the target graphic, and the target graphic is imported into the OPC database, and then the target graphic in the OPC database is OPC corrected to obtain the OPC program, and then the OPC program is used to perform all corrections on the layout file with the hot spot. The present invention first obtains a layout file with hot spots, obtains a core hot spot area through simulation, and intercepts a circular area in the core hot spot area to form a matching template, matches the matching template in the layout file with hot spots to obtain a target graphic, performs OPC correction on the target graphic, and thus obtains an OPC program, after which the OPC program can be used to perform all corrections on the layout file with hot spots, thereby reducing the time for system debugging, i.e., OPC correction, and improving correction efficiency.
[0029] Furthermore, the core hot spot area is formed by the area between at least the first figure and the second figure in the matching template, and the shortest distance between the first figure and the second figure forms the most dangerous distance, wherein the first side of the first figure connected to the core hot spot area is less than or equal to the second side of the second figure connected to the core hot spot area, and the first side is projected to the second side to obtain the opposite projection point, and the second side is cut at the projection point to form a projection line segment; the projection line segment and other sides of the second figure other than the second side, as well as all sides of the first figure, are expanded and contracted in a direction perpendicular to each side to obtain a matching range. The present invention avoids the situation where the expansion is stopped prematurely due to noise graphics when the graphics are expanded or contracted during matching by only expanding the projection part of the shorter side on the longer side, that is, it prevents the situation where the boundary caused by the noise graphics cannot be expanded to the preset size. BRIEF DESCRIPTION OF THE DRAWINGS
[0030] Those skilled in the art will appreciate that the accompanying drawings are provided for a better understanding of the present invention and do not constitute any limitation on the scope of the present invention.
[0031] Figure 1 It is a flow chart of a method for matching and debugging hot spots in a photolithography process provided by an embodiment of the present invention.
[0032] Figure 2 It is a partial schematic diagram of a layout file with hot spots provided by an embodiment of the present invention.
[0033] Figure 3 It is a schematic diagram of a matching template provided in one embodiment of the present invention.
[0034] Figure 4 It is a schematic diagram of expanding and shrinking the matching template based on preset expansion and shrinking conditions for matching with a layout file with hot spots provided by an embodiment of the present invention. DETAILED DESCRIPTION
[0035] In order to make the purpose, advantages and features of the present invention clearer, the present invention is further described in detail below in conjunction with the accompanying drawings and specific embodiments. It should be noted that the drawings are all in a very simplified form and are not drawn to scale, and are only used to conveniently and clearly assist in explaining the purpose of the embodiments of the present invention. In addition, the structure shown in the drawings is often a part of the actual structure. In particular, the emphasis of each drawing is different, and sometimes different scales are used.
[0036] As used in the present invention, the singular forms "one", "an", and "the" include plural objects, unless the content clearly indicates otherwise. As used in the present invention, the term "or" is generally used in a sense that includes "and / or", unless the content clearly indicates otherwise. As used in the present invention, the term "several" is generally used in a sense that includes "at least one", unless the content clearly indicates otherwise. As used in the present invention, the term "at least two" is generally used in a sense that includes "two or more", unless the content clearly indicates otherwise. In addition, the terms "first", "second", and "third" are used only for descriptive purposes and cannot be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, the features defined as "first", "second", and "third" may explicitly or implicitly include one or at least two of the features.
[0037] Figure 1 This is a flow chart of a method for matching and debugging hot spots in a photolithography process provided by an embodiment of the present invention. Figure 1 As shown, the method for matching and debugging the hot spots of the lithography process provided by the embodiment of the present invention includes the following steps:
[0038] S1: Obtain a layout file with hot spots, and substitute it into the preliminary debugging program of the OPC lithography model to obtain the approximate location information of the hot spot pattern, and perform simulation to obtain the core hot spot area, and select any point in the core hot spot area as a mark;
[0039] S2: taking the mark as the center of the circle and intercepting a circular area in the layout file with the hotspot with a preset radius to form a matching template;
[0040] S3: using the matching template, matching is performed in the layout file with hot spots based on preset expansion, contraction conditions and iteration conditions to obtain a target graphic, and the target graphic is imported into the OPC database;
[0041] S4: performing OPC correction on the target graphic in the OPC database to obtain an OPC program;
[0042] S5: Using the OPC program to completely correct the layout file with hot spots.
[0043] In step S1, a layout file with hot spots is obtained and substituted into the preliminary debugging program of the OPC lithography model to obtain the approximate location information of the hot spot pattern, and a simulation is performed to obtain the core hot spot area, and any point in the core hot spot area is selected as a mark.
[0044] Figure 2is a partial schematic diagram of a layout file with hot spots provided by an embodiment of the present invention. Figure 3 is a schematic diagram of a matching template provided by an embodiment of the present invention. Figure 2 and Figure 3 As shown, a layout file with a hotspot is obtained, and according to the coordinate position of the hotspot in the layout file with the hotspot, an approximate area of the hotspot is identified, and the approximate area is simulated to obtain the most dangerous distance Gap, which is actually the shortest distance between adjacent graphics simulated after the graphics simulation. At the same time, the graphics around the most dangerous distance Gap are obtained, and according to preset conditions, such as the size around the most dangerous distance Gap, a graphic is obtained, and the obtained graphic is defined as the core hotspot area, such as Figure 3 The area where the dashed box is located.
[0045] When simulating the approximate area, a size requirement is set. For example, for graphics with a size smaller than the minimum (preset) size, no simulation is required. Please refer to Figure 2 and Figure 3 As shown in FIG. 1 , the small square-shaped graphics do not need to be simulated, so the most dangerous distance Gap comes from the closest distance between the two graphics that have been simulated and are closest to each other after the simulation, such as Figure 3 In the figure, it is the distance between two adjacent parallel sides of two perpendicular long strips (usually in the layout, the graphics are in the form of rectangles with parallel or perpendicular sides). The smallest size of small squares that are not simulated do not participate in the process of obtaining the most dangerous distance Gap.
[0046] In step S2, a circular area is intercepted in the layout file with the hotspot with the mark as the center and a preset radius to form a matching template.
[0047] In the previous step S1, any point in the core hotspot area is selected as a mark O. In this step, the mark O is used as the center of the circle, and a preset r is used as the radius to cut and separate the core hotspot area (that is, in the layout file with the hotspot) to form a pre-anchored area pattern as a matching template, where r>0. Exemplarily, r is 2μm.
[0048] In one embodiment of the present invention, after forming the matching template, before executing step S3, it may also include: determining whether the photolithography process has changed, if so, establishing a new photolithography model based on the new photolithography process, re-simulating using the new photolithography model, updating the most dangerous distance to the new most dangerous distance, and updating the matching template corresponding to the new most dangerous distance; because if the photolithography process has been updated, all dimensions will no longer be accurate and must be re-simulated and re-calculated. If the photolithography process has not changed, the matching template is not updated.
[0049] In one embodiment of the present invention, after forming the matching template and before executing step S3, it may also include: importing the matching template into the OPC database; using the matching template to perform graphic matching on the stored graphics in the OPC database, and performing a deduplication operation on the matched exactly identical graphics, that is, removing repeated exactly identical graphics.
[0050] In one embodiment of the present invention, after the above deduplication operation and before executing step S3, the method further includes: checking the OPC database, if the OPC database is empty, continuing to execute step S2, and if the OPC database is not empty, executing step S3.
[0051] In step S3, the matching template is used to match the layout file with hot spots based on preset expansion, contraction conditions and iteration conditions to obtain a target graphic, and the target graphic is imported into the OPC database.
[0052] Figure 4 FIG. 1 is a schematic diagram of an embodiment of the present invention for expanding and contracting the matching template based on preset expansion and contraction conditions to match a layout file with hot spots. In this embodiment, please refer to Figure 4 As shown, the matching template has a first figure 1 and a second figure 2, and the first figure 1 and the second figure 2 are the two figures with the closest distance (i.e., the most dangerous distance) after simulation in the previous steps, and the area between the shortest distance between the first figure 1 and the second figure 2 is defined as the core hotspot area, wherein the first edge 11 in the first figure 1 connected to the core hotspot area is greater than or equal to the second edge 21 in the second figure connected to the core hotspot area, and the first edge 11 is projected to the second edge 21 to obtain the opposite projection point, and the second edge 21 of the second figure 2 is cut at the projection point to form a projection line segment AB.
[0053] The projection line segment AB and the other edges of the second figure 2 (i.e., the other edges of the second figure 2 except the second edge 21), and all edges of the first figure 1 are expanded or shrunk in a direction perpendicular to the edges with a preset size to obtain a matching range, and the matching range includes all figures covered by the expanded or shrunk size.
[0054] In the current technology, the edges of the graphics are directly extended, while the present invention projects the shorter edge of the two closest edges of at least two graphics forming the hotspot area that share the same edge with the hotspot area onto the longer edge to obtain a projection line segment, and when the longer edge is extended (i.e., extended toward the hotspot area), only the projection line segment portion is used for extension, and the other parts of the edge where the projection line segment is located are not extended. This avoids the situation in the prior art where the expansion of the long edge is stopped due to other small graphics (noise graphics) around the graphic (because during the expansion process, when the edge encounters some small graphics, the expansion will stop, and usually these small graphics do not participate in the above-mentioned simulation, do not participate in the process of forming the hotspot, and should be ignored).
[0055] In addition, because the shorter side is projected on the longer side, and the shorter side is fully involved in the formation of the hotspot area (that is, when the hotspot area is defined, at least all parts of the side of the figure where the shorter side is located that are used to form the most dangerous distance are included), the shorter side is expanded only within the hotspot area. Usually, during layout design, no other small graphics will appear in the hotspot area, so the shorter side will expand within the hotspot area without encountering noise graphics).
[0056] In this embodiment, the size of the image expanded or contracted in the direction perpendicular to each edge is determined by the floating process conditions, such as photolithography process fluctuations, machine equipment errors, etc. The preset size can be determined according to actual process conditions or actual needs.
[0057] The embodiment of the present invention avoids the situation where the expansion is stopped prematurely due to noise graphics when expanding or contracting the graphics during matching by only expanding the projection part of the shorter side on the longer side, that is, it prevents the situation where the boundary caused by the noise graphics cannot be expanded to the preset size.
[0058] Using the matching template, the specific steps of matching based on the iteration conditions in the layout file with hotspots include: using the matching template to globally match the layout file with hotspots to obtain the target graphic; gradually increasing the radius outward with the center of the circle of the graphic of the matching template as the center until the iteration stop condition terminates, and all process graphics (graphics in the layout file with hotspots) presented in the circle corresponding to the radius of all processes covered during the period participate in the global matching with their corresponding matching ranges, and the graphics in the layout file with hotspots that are the same as the graphics in the process with the matching range are defined as the target graphics.
[0059] The iteration stopping conditions include: when a preset number of iterations is reached, and / or when a graphic in the layout file with hotspots that successfully matches the matching template in the process of gradually improving the matching range by expanding outwardly appears for the first time with a graphic that fails to match within the matching range in the matching template.
[0060] After the target graphic is imported into the OPC database, it is compared with the existing graphics in the OPC database to perform a deduplication operation.
[0061] In step S4, the target graphics in the OPC database are subjected to OPC correction to obtain an OPC program. That is, the correction program corresponding to the target graphics is debugged and improved for later graphics correction of layout files with hot spots. Therefore, after the target graphics are placed in the OPC database, further deduplication operations are performed to ensure that there is only one target graphics of each type in the database. When debugging and improving the program later, only one operation is required for a certain graphics, which greatly saves time costs.
[0062] In step S5, the OPC program is used to correct all the layout files with hot spots, that is, the above debugged and improved program is used to correct all the layout files with hot spots, thus achieving a significant saving in correction time.
[0063] In an embodiment of the present invention, a layout file with hot spots is first obtained, a core hot spot area is obtained through simulation, and a circular area is intercepted in the core hot spot area to form a matching template. The matching template is matched in the layout file with hot spots to obtain a target graphic, and the target graphic is OPC corrected to obtain an OPC program. Thereafter, the OPC program can be used to perform all corrections on the layout file with hot spots, thereby reducing the time for system debugging, i.e., OPC correction, and improving correction efficiency.
[0064] To sum up, in the method for matching and debugging hot spots in lithography processes provided by the present invention, a layout file with hot spots is first obtained, and substituted into the preliminary debugging program of the OPC lithography model to obtain the approximate position information of the hot spot graphic, and a simulation is performed to obtain the core hot spot area, and any point in the core hot spot area is selected as a mark, and then the mark is used as the center of the circle, and a circular area is intercepted in the layout file with the hot spot with a preset radius to form a matching template, and then the matching template is used to match the layout file with the hot spot based on preset expansion, contraction conditions and iteration conditions to obtain the target graphic, and the target graphic is imported into the OPC database, and then the target graphic in the OPC database is OPC corrected to obtain the OPC program, and then the OPC program is used to perform all corrections on the layout file with the hot spot. The present invention first obtains a layout file with hot spots, obtains a core hot spot area through simulation, and intercepts a circular area in the core hot spot area to form a matching template, matches the matching template in the layout file with hot spots to obtain a target graphic, performs OPC correction on the target graphic, and thus obtains an OPC program, after which the OPC program can be used to perform all corrections on the layout file with hot spots, thereby reducing the time for system debugging, i.e., OPC correction, and improving correction efficiency.
[0065] Furthermore, the core hot spot area is formed by the area between at least the first figure and the second figure in the matching template, and the shortest distance between the first figure and the second figure forms the most dangerous distance, wherein the first side of the first figure connected to the core hot spot area is less than or equal to the second side of the second figure connected to the core hot spot area, and the first side is projected to the second side to obtain the opposite projection point, and the second side is cut at the projection point to form a projection line segment; the projection line segment and other sides of the second figure other than the second side, as well as all sides of the first figure, are expanded and contracted in a direction perpendicular to each side to obtain a matching range. The present invention avoids the situation where the expansion is stopped prematurely due to noise graphics when the graphics are expanded or contracted during matching by only expanding the projection part of the shorter side on the longer side, that is, it prevents the situation where the boundary caused by the noise graphics cannot be expanded to the preset size.
[0066] The above description is only a description of the preferred embodiments of the present invention, and is not intended to limit the scope of the present invention. Any changes or modifications made by a person skilled in the art in the field of the present invention based on the above disclosure shall fall within the scope of protection of the claims.
Claims
1. A method for matching and debugging hot spots in a photolithography process, characterized in that: The following steps are involved: S1: Obtain a layout file with hot spots, and substitute it into the preliminary debugging program of the OPC lithography model to obtain the approximate location information of the hot spot pattern, and perform simulation to obtain the core hot spot area, and select any point in the core hot spot area as a mark; S2: taking the mark as the center of the circle and intercepting a circular area in the layout file with the hotspot with a preset radius to form a matching template; S3: using the matching template, matching is performed in the layout file with hot spots based on preset expansion, contraction conditions and iteration conditions to obtain a target graphic, and the target graphic is imported into the OPC database; S4: performing OPC correction on the target graphic in the OPC database to obtain an OPC program; S5: Using the OPC program to completely correct the layout file with hot spots.
2. The method for matching and debugging hot spots in a photolithography process according to claim 1, characterized in that: In S1 and S2, the approximate area of the hotspot is identified based on the coordinate position information of the hotspot in the layout file with the hotspot, and the approximate area is simulated to obtain the most dangerous distance and the surrounding graphics reaching the most dangerous distance position, and the core hotspot area is defined according to preset conditions; with any point in the core hotspot area as the center of the circle and a preset r as the radius, the layout file with the hotspot is cut and separated to form a pre-anchored area graphic as a matching template, wherein r>0.
3. The method for matching and debugging hot spots in a photolithography process according to claim 1, characterized in that: The specific steps of using the matching template to match the layout file with hot spots based on preset expansion and contraction conditions include: The core hot spot area is formed by the area between at least the first figure and the second figure in the matching template, the shortest distance between the first figure and the second figure forms the most dangerous distance, wherein the first side in the first figure connected to the core hot spot area is less than or equal to the second side in the second figure connected to the core hot spot area, the first side is projected onto the second side to obtain a subtended projection point, and the second side is cut at the projection point to form a projection line segment; The projection line segment and other edges of the second figure other than the second edge, as well as all edges of the first figure, are expanded or shrunk along a direction perpendicular to each edge with a preset size to obtain a matching range, wherein the matching range includes all figures covered by the expanded or shrunk size.
4. The method for matching and debugging hot spots in a photolithography process according to claim 3, characterized in that: After forming the matching model and before performing matching, the method further includes: Determine whether the lithography process has changed. If so, establish a new lithography model based on the new lithography process, use the new lithography model to perform simulation again, update the most dangerous distance to the new most dangerous distance, and update the matching template corresponding to the new most dangerous distance; if the lithography process has not changed, do not update the matching template.
5. The method for matching and debugging hot spots in a photolithography process according to claim 3, characterized in that: The size of the image expansion and contraction in the direction perpendicular to each side is determined by the floating process conditions.
6. The method for matching and debugging hot spots in a photolithography process according to claim 1 or 3, characterized in that: The specific steps of using the matching template to match the layout file with hot spots based on the iteration condition include: Using the matching template, globally matching the layout file with hot spots to obtain the target graphic; The radius is gradually increased outward with the center of the graphic of the matching template as the center until the iteration stop condition is terminated. All process graphics presented in the circle corresponding to the radius in all processes covered during the period participate in the global matching with their corresponding matching ranges, and the graphics in the layout file with hotspots that are identical to the graphics in the process with the matching range are defined as the target graphics.
7. The method for matching and debugging hot spots in a photolithography process according to claim 6, characterized in that: The iteration stop condition includes: when a preset number of iterations is reached; and / or, When a graphic that successfully matches the matching template in the process of gradually improving the matching range by expanding outwards, a graphic in the layout file with hotspots that fails to match within the matching range in the matching template appears for the first time.
8. The method for matching and debugging hot spots in a photolithography process according to claim 1, characterized in that: The target graphic is imported into the OPC database, compared with the existing graphics in the OPC database, and deduplication is performed.
9. The method for matching and debugging hot spots in a photolithography process according to claim 1, characterized in that: After forming the matching template and before performing matching, the method further includes: Importing the matching template into the OPC database; The matching template is used to perform graphic matching on the graphics stored in the OPC database, and a deduplication operation is performed on the graphics that are matched to be exactly the same.
10. The method for matching and debugging hot spots in a photolithography process according to claim 9, characterized in that: After performing the deduplication operation and before performing matching, the method further includes: checking the OPC database, and if the OPC database is empty, continuing to execute step S2; if the OPC database is not empty, performing matching.