Magnetic memory cell, logic module, apparatus, device and operational amplifier

Abstract

The invention provides a magnetic memory cell. The magnetic memory cell comprises a first electrode layer; the piezoelectric layer is arranged on the upper surface of the first electrode layer; the second electrode layer is arranged on the upper surface of the piezoelectric layer; the piezoelectric top electrode comprises a first piezoelectric top electrode and a second piezoelectric top electrode which are symmetrically arranged on the two sides of the second electrode layer, the first piezoelectric top electrode and the second piezoelectric top electrode are arranged on the upper surface of the piezoelectric layer, and the first piezoelectric top electrode, the second piezoelectric top electrode and the second electrode layer are arranged at intervals; the magnetic tunnel junction is arranged on the upper surface of the second electrode layer; and the third electrode layer is arranged on the upper surface of the magnetic tunnel junction. According to the magnetic storage unit, the logic module, the device, the device and the operational amplifier provided by the invention, high-energy-efficiency spin storage and spin logic can be realized.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and in particular to a magnetic storage unit, a logic module, a device, a component and an operational amplifier. Background Art

[0002] The rapid development of artificial intelligence and Internet of Things technologies in recent years has put forward higher performance requirements for integrated circuits. However, as the size of CMOS is getting closer and closer to the boundary between macroscopic physics and quantum physics, the method of improving the performance of integrated circuits by reducing the size faces huge challenges in physical principles and process technology. Exploring new low-power devices and their architectures is an inevitable requirement for the next stage of development of the integrated circuit industry.

[0003] Traditional electronic devices use electron charge as a state variable. Since charge is strongly scattered by the lattice, the energy dissipation of the device will be very high. In order to reduce energy dissipation, one research idea is to use electron spin as a state variable. Since the switching energy of the spin state is relatively low, the energy consumption of spintronic devices is much lower than that of traditional electronic devices, and they have the characteristics of small size, high speed, and non-volatility of data. However, the spin control of spintronic devices is usually carried out by current control, and the energy efficiency needs to be improved. Summary of the invention

[0004] The magnetic storage unit, logic module, apparatus, device and operational amplifier provided by the present invention can realize high-energy-efficiency spin storage and spin logic.

[0005] In a first aspect, the present invention provides a magnetic storage unit, comprising:

[0006] a first electrode layer;

[0007] A piezoelectric layer is disposed on the upper surface of the first electrode layer;

[0008] A second electrode layer is arranged on the upper surface of the piezoelectric layer;

[0009] A piezoelectric top electrode, comprising a first piezoelectric top electrode and a second piezoelectric top electrode symmetrically arranged on both sides of the second electrode layer, wherein the first piezoelectric top electrode and the second piezoelectric top electrode are arranged on the upper surface of the piezoelectric layer, and the first piezoelectric top electrode and the second piezoelectric top electrode are spaced apart from the second electrode layer;

[0010] A magnetic tunnel junction is arranged on the upper surface of the second electrode layer;

[0011] The third electrode layer is arranged on the upper surface of the magnetic tunnel junction.

[0012] Optionally, the magnetic tunnel junction includes a first antiferromagnetic layer, a first free layer, a barrier layer, a second free layer and a second antiferromagnetic layer arranged in sequence from bottom to top.

[0013] Optionally, the first antiferromagnetic layer generates a first exchange bias field in the first free layer, and the second antiferromagnetic layer generates a second exchange bias field in the second free layer;

[0014] The directions of the first exchange bias field and the second exchange bias field are perpendicular to each other; the directions of the first exchange bias field and the second exchange bias field form an angle of 45° with the arrangement direction of the first piezoelectric top electrode and the second piezoelectric top electrode.

[0015] Optionally, the potential difference between the first piezoelectric top electrode and the second piezoelectric top electrode and the first electrode layer can change the magnetoresistance state of the magnetic tunnel junction by controlling the strain of the piezoelectric layer.

[0016] Optionally, the second electrode layer and the third electrode layer can output the magnetoresistance state of the magnetic tunnel junction.

[0017] In a second aspect, the present invention provides a logic module, comprising two magnetic storage units as described in any one of the above, wherein the two magnetic storage units are respectively a first magnetic storage unit and a second magnetic storage unit;

[0018] The first magnetic storage unit is arranged vertically to the second magnetic storage unit, a first exchange bias field generated by the first antiferromagnetic layer in the first magnetic storage unit at the first free layer is parallel to a first exchange bias field generated by the first antiferromagnetic layer in the second magnetic storage unit at the first free layer, and a second exchange bias field generated by the second antiferromagnetic layer in the first magnetic storage unit at the second free layer is parallel to a second exchange bias field generated by the second antiferromagnetic layer in the second magnetic storage unit at the second free layer;

[0019] The first piezoelectric top electrode and the second piezoelectric top electrode of the two magnetic storage units are electrically connected to the first input port, the first electrode layer of the two magnetic storage units is electrically connected to the second input port, and the second electrode layer of the two magnetic storage units is electrically connected to the output port; the third electrode layer of the first magnetic storage unit is electrically connected to the first voltage source interface, and the third electrode layer of the second magnetic storage unit is electrically connected to the second voltage source interface.

[0020] In a third aspect, the present invention provides a logic module, comprising two magnetic storage units as described in any one of the above, wherein the two magnetic storage units are respectively a first magnetic storage unit and a second magnetic storage unit;

[0021] The first magnetic storage unit is arranged in parallel with the second magnetic storage unit, a first exchange bias field generated by the first antiferromagnetic layer in the first magnetic storage unit in the first free layer is parallel to the first exchange bias field generated by the first antiferromagnetic layer in the second magnetic storage unit in the first free layer, and a second exchange bias field generated by the second antiferromagnetic layer in the first magnetic storage unit in the second free layer is parallel to the second exchange bias field generated by the second antiferromagnetic layer in the second magnetic storage unit in the second free layer;

[0022] The first piezoelectric top electrode and the second piezoelectric top electrode of the first magnetic storage unit are electrically connected to the first input interface, the first electrode layer of the first magnetic storage unit is electrically connected to the second input port, and the third electrode layer of the first magnetic storage unit is electrically connected to the first voltage source port;

[0023] The first piezoelectric top electrode and the second piezoelectric top electrode of the second magnetic storage unit are electrically connected to the second input interface, the first electrode layer of the second magnetic storage unit is electrically connected to the first input port, and the third electrode layer of the second magnetic storage unit is electrically connected to the second voltage source port;

[0024] The second electrode layers of the two magnetic storage units are electrically connected to the output port.

[0025] In a fourth aspect, the present invention provides a logic device, comprising a logic module as described in any one of the preceding items, wherein the first voltage source port is used to input a supply voltage, the second voltage source port is grounded, and the second input port is used to input half of the supply voltage; the first input port is used to input a signal to be processed, and the output interface is used to output an inverted signal that is inverted to the signal to be processed.

[0026] In a fifth aspect, the present invention provides a logic device, comprising a logic module as described in any one of the preceding items, wherein the second voltage source port is used to input a supply voltage, the first voltage source port is grounded, and the second input port is used to input half of the supply voltage; the voltage between the first input port and the output interface behaves as buffer logic.

[0027] In a sixth aspect, the present invention provides a logic device, comprising four logic devices as described in any one of the above, wherein the four logic devices are respectively a first logic device, a second logic device, a third logic device and a fourth logic device;

[0028] The output ports of the first logic device, the second logic device and the third logic device are electrically connected to the first input port of the fourth logic device;

[0029] The second input ports of the four logic devices are used to input half of the supply voltage;

[0030] The voltages of the first input ports of the first logic device, the second logic device, and the third logic device and the voltage of the output port of the fourth logic device perform majority decision logic.

[0031] In a seventh aspect, the present invention provides an operational amplifier, comprising a logic module as described in any one of the foregoing items, wherein the first voltage source port is used to input a supply voltage, the second input port is used to input a negative supply voltage, the first input port and the second input port are used to input a differential signal, and the output port is used to output an amplified signal.

[0032] In the technical solution provided by the present invention, the strain of the piezoelectric layer can be controlled by changing the voltage between the piezoelectric top electrode and the first electrode layer, thereby controlling the strain of the magnetic tunnel junction position, thereby controlling the resistance change of the magnetic tunnel junction. In the technical solution provided by the present invention, its working process is based on the change of voltage, and the energy dissipation is low. In addition, the technical solution provided by the present invention can be directly cascaded and has strong scalability. BRIEF DESCRIPTION OF THE DRAWINGS

[0033] Figure 1 It is a structural schematic diagram of a magnetic storage unit according to an embodiment of the present invention;

[0034] Figure 2 It is a schematic diagram of the three-dimensional structure of a magnetic storage unit according to an embodiment of the present invention;

[0035] Figure 3 A schematic diagram of a first exchange bias field and a second exchange bias field of a magnetic storage unit according to an embodiment of the present invention;

[0036] Figure 4 It is a structural diagram of a logic module according to an embodiment of the present invention;

[0037] Figure 5 Schematic diagram of a first exchange bias field and a second exchange bias field of a logic module according to an embodiment of the present invention;

[0038] Figure 6 It is a structural diagram of a logic module according to an embodiment of the present invention;

[0039] Figure 7 Schematic diagram of a first exchange bias field and a second exchange bias field of a logic module according to an embodiment of the present invention;

[0040] Figure 8 This is a pin diagram of a logic module according to an embodiment of the present invention;

[0041] Fig. 9 is a schematic diagram of a logic device according to an embodiment of the present invention;

[0042] Fig.10is a schematic diagram of a logic device according to an embodiment of the present invention;

[0043] Fig.11 FIG. 4 is a schematic diagram of an operational amplifier according to an embodiment of the present invention. DETAILED DESCRIPTION

[0044] In order to make the purpose, technical solution and advantages of the embodiments of the present invention clearer, the technical solution in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0045] An embodiment of the present invention provides a magnetic storage unit, such as Figure 1-2 As shown, including:

[0046] a first electrode layer;

[0047] A piezoelectric layer is disposed on the upper surface of the first electrode layer;

[0048] A second electrode layer is arranged on the upper surface of the piezoelectric layer;

[0049] A piezoelectric top electrode, comprising a first piezoelectric top electrode and a second piezoelectric top electrode symmetrically arranged on both sides of the second electrode layer, wherein the first piezoelectric top electrode and the second piezoelectric top electrode are arranged on the upper surface of the piezoelectric layer, and the first piezoelectric top electrode and the second piezoelectric top electrode are spaced apart from the second electrode layer;

[0050] A magnetic tunnel junction is arranged on the upper surface of the second electrode layer;

[0051] The third electrode layer is arranged on the upper surface of the magnetic tunnel junction.

[0052] In the technical solution provided by the embodiment of the present invention, the strain of the piezoelectric layer can be controlled by changing the voltage between the piezoelectric top electrode and the first electrode layer, thereby controlling the strain of the magnetic tunnel junction position, thereby controlling the resistance change of the magnetic tunnel junction. In the technical solution provided by the present invention, its working process is based on the change of voltage, and the energy dissipation is low. In addition, the technical solution provided by the present invention can be directly cascaded and has strong scalability.

[0053] As an optional implementation, the magnetic tunnel junction includes a first antiferromagnetic layer, a first free layer, a barrier layer, a second free layer, and a second antiferromagnetic layer arranged in sequence from bottom to top.

[0054] As an optional implementation, Figure 3As shown, the first antiferromagnetic layer generates a first exchange bias field in the first free layer, and the second antiferromagnetic layer generates a second exchange bias field in the second free layer;

[0055] The directions of the first exchange bias field and the second exchange bias field are perpendicular to each other; the directions of the first exchange bias field and the second exchange bias field form an angle of 45° with the arrangement direction of the first piezoelectric top electrode and the second piezoelectric top electrode.

[0056] As an optional implementation, the potential difference between the first piezoelectric top electrode and the second piezoelectric top electrode and the first electrode layer can change the magnetoresistance state of the magnetic tunnel junction by controlling the strain of the piezoelectric layer.

[0057] As an optional implementation, the second electrode layer and the third electrode layer can output the magnetoresistance state of the magnetic tunnel junction.

[0058] In some embodiments, Figure 3 In the magnetic storage unit shown, the exchange bias field Hex1 generated by the first antiferromagnetic layer on the first free layer is perpendicular to the exchange bias field Hex2 generated by the second antiferromagnetic layer on the second free layer. And it forms a 45° angle with the line connecting the first and second piezoelectric top electrodes. The first and second piezoelectric top electrodes are connected to the first input port A, and the first electrode layer is connected to the second input port B. The potential difference between the first input port A and the second input port B can control the strain of the piezoelectric layer and thus control the strain of the tunnel junction position. When the potential difference between A and B is U1, the piezoelectric layer applies tensile strain to the magnetic tunnel junction, and the tensile direction is along the direction of the line connecting the first and second piezoelectric top electrodes. The components of the exchange bias field Hex1 and the exchange bias field Hex2 along the direction of the line play a dominant role in the free layer. At this time, the components of the exchange bias field Hex1 and the exchange bias field Hex2 along the direction of the line are parallel, so the first free layer and the second free layer are switched to a parallel state. When the potential difference between A and B is U2, the piezoelectric layer applies compressive strain to the magnetic tunnel junction, and the compression direction is along the direction of the line connecting the first and second piezoelectric top electrodes. The components of the exchange bias field Hex1 and the exchange bias field Hex2 along the direction perpendicular to the line play a dominant role in the free layer. At this time, the components of the exchange bias field Hex1 and the exchange bias field Hex2 along the direction perpendicular to the line are antiparallel, so the first free layer and the second free layer switch to an antiparallel state. When the magnetizations of the first free layer and the second free layer are parallel, the magnetic tunnel junction is in a low resistance state, and when the magnetizations of the first free layer and the second free layer are antiparallel, the magnetic tunnel junction is in a high resistance state. The second electrode layer is connected to the first output port, and the third electrode layer is connected to the second output port. The resistance state information of the magnetic tunnel junction is read through the first and second output ports.

[0059] The embodiment of the present invention further provides a logic module, such as Figure 4-5As shown, it comprises two magnetic storage units as described in any one of the above, wherein the two magnetic storage units are respectively a first magnetic storage unit and a second magnetic storage unit;

[0060] The first magnetic storage unit is arranged vertically to the second magnetic storage unit, a first exchange bias field generated by the first antiferromagnetic layer in the first magnetic storage unit at the first free layer is parallel to a first exchange bias field generated by the first antiferromagnetic layer in the second magnetic storage unit at the first free layer, and a second exchange bias field generated by the second antiferromagnetic layer in the first magnetic storage unit at the second free layer is parallel to a second exchange bias field generated by the second antiferromagnetic layer in the second magnetic storage unit at the second free layer;

[0061] The first piezoelectric top electrode and the second piezoelectric top electrode of the two magnetic storage units are electrically connected to the first input port, the first electrode layer of the two magnetic storage units is electrically connected to the second input port, and the second electrode layer of the two magnetic storage units is electrically connected to the output port; the third electrode layer of the first magnetic storage unit is electrically connected to the first voltage source interface, and the third electrode layer of the second magnetic storage unit is electrically connected to the second voltage source interface. After forming the above logic module, its pins are as follows Figure 8 shown.

[0062] The embodiment of the present invention also provides a logic module, such as Figure 6-7 As shown, it comprises two magnetic storage units as described in any one of the above, wherein the two magnetic storage units are respectively a first magnetic storage unit and a second magnetic storage unit;

[0063] The first magnetic storage unit is arranged in parallel with the second magnetic storage unit, a first exchange bias field generated by the first antiferromagnetic layer in the first magnetic storage unit in the first free layer is parallel to the first exchange bias field generated by the first antiferromagnetic layer in the second magnetic storage unit in the first free layer, and a second exchange bias field generated by the second antiferromagnetic layer in the first magnetic storage unit in the second free layer is parallel to the second exchange bias field generated by the second antiferromagnetic layer in the second magnetic storage unit in the second free layer;

[0064] The first piezoelectric top electrode and the second piezoelectric top electrode of the first magnetic storage unit are electrically connected to the first input interface, the first electrode layer of the first magnetic storage unit is electrically connected to the second input port, and the third electrode layer of the first magnetic storage unit is electrically connected to the first voltage source port;

[0065] The first piezoelectric top electrode and the second piezoelectric top electrode of the second magnetic storage unit are electrically connected to the second input interface, the first electrode layer of the second magnetic storage unit is electrically connected to the first input port, and the third electrode layer of the second magnetic storage unit is electrically connected to the second voltage source port;

[0066] The second electrode layers of the two magnetic storage units are electrically connected to the output port. After forming the above logic module, its pins are as follows Figure 8 shown.

[0067] The embodiment of the present invention also provides a logic device, such as Fig. 9 As shown, it includes a logic module as described in any of the above items, wherein the first voltage source port is used to input a power supply voltage, the second voltage source port is grounded, and the second input port is used to input half of the power supply voltage; the first input port is used to input a signal to be processed, and the output interface is used to output an inverted signal that is inverted to the signal to be processed. When the input port is at a high level, the output port outputs a low level; when the input port is at a low level, the output port outputs a high level.

[0068] The embodiment of the present invention further provides a logic device, Fig. 9 As shown, it includes a logic module as described in any of the above items, wherein the second voltage source port is used to input a power supply voltage, the first voltage source port is grounded, and the second input port is used to input half of the power supply voltage; the voltage of the first input port and the output interface is expressed as a buffer logic. When the input port is at a high level, the output port outputs a high level; when the input port is at a low level, the output port outputs a low level.

[0069] The embodiment of the present invention also provides a logic device, such as Fig.10 As shown, it includes four logic devices as described in any one of the above items, wherein the four logic devices are respectively a first logic device, a second logic device, a third logic device and a fourth logic device;

[0070] The output ports of the first logic device, the second logic device and the third logic device are electrically connected to the first input port of the fourth logic device;

[0071] The second input ports of the four logic devices are used to input half of the supply voltage;

[0072] The voltage of the first input port of the first logic device, the second logic device and the third logic device and the voltage of the output port of the fourth logic device perform majority decision logic. When two or more of the three input ports are high level, the output port outputs high level; otherwise, the output port outputs low level.

[0073] The embodiment of the present invention further provides an operational amplifier, such as Fig.11As shown, it includes a logic module as described in any of the above items, wherein the first voltage source port is used to input a supply voltage, the second input port is used to input a negative supply voltage, the first input port and the second input port are used to input a differential signal, and the output port is used to output an amplified signal.

[0074] The above is only a specific embodiment of the present invention, but the protection scope of the present invention is not limited thereto. Any changes or substitutions that can be easily thought of by a person skilled in the art within the technical scope disclosed by the present invention should be included in the protection scope of the present invention. Therefore, the protection scope of the present invention should be based on the protection scope of the claims.

Claims

1. A magnetic storage unit, characterized in that: include: a first electrode layer; A piezoelectric layer is disposed on the upper surface of the first electrode layer; A second electrode layer is arranged on the upper surface of the piezoelectric layer; A piezoelectric top electrode, comprising a first piezoelectric top electrode and a second piezoelectric top electrode symmetrically arranged on both sides of the second electrode layer, wherein the first piezoelectric top electrode and the second piezoelectric top electrode are arranged on the upper surface of the piezoelectric layer, and the first piezoelectric top electrode and the second piezoelectric top electrode are spaced apart from the second electrode layer; A magnetic tunnel junction is arranged on the upper surface of the second electrode layer; The third electrode layer is arranged on the upper surface of the magnetic tunnel junction.

2. The magnetic storage unit according to claim 1, characterized in that The magnetic tunnel junction includes a first antiferromagnetic layer, a first free layer, a barrier layer, a second free layer, and a second antiferromagnetic layer which are sequentially arranged from bottom to top.

3. The magnetic storage unit according to claim 2, characterized in that The first antiferromagnetic layer generates a first exchange bias field in the first free layer, and the second antiferromagnetic layer generates a second exchange bias field in the second free layer; The directions of the first exchange bias field and the second exchange bias field are perpendicular to each other; the directions of the first exchange bias field and the second exchange bias field form an angle of 45° with the arrangement direction of the first piezoelectric top electrode and the second piezoelectric top electrode.

4. The magnetic storage unit according to claim 1, characterized in that The potential difference between the first piezoelectric top electrode and the second piezoelectric top electrode and the first electrode layer can change the magnetoresistance state of the magnetic tunnel junction by controlling the strain of the piezoelectric layer.

5. The magnetic storage unit according to claim 1, characterized in that The second electrode layer and the third electrode layer can output the magnetoresistance state of the magnetic tunnel junction.

6. A logic module, characterized in that: comprising two magnetic storage units according to any one of claims 1 to 5, wherein the two magnetic storage units are respectively a first magnetic storage unit and a second magnetic storage unit; The first magnetic storage unit is arranged vertically to the second magnetic storage unit, a first exchange bias field generated by the first antiferromagnetic layer in the first magnetic storage unit at the first free layer is parallel to a first exchange bias field generated by the first antiferromagnetic layer in the second magnetic storage unit at the first free layer, and a second exchange bias field generated by the second antiferromagnetic layer in the first magnetic storage unit at the second free layer is parallel to a second exchange bias field generated by the second antiferromagnetic layer in the second magnetic storage unit at the second free layer; The first piezoelectric top electrode and the second piezoelectric top electrode of the two magnetic storage units are electrically connected to the first input port, the first electrode layer of the two magnetic storage units is electrically connected to the second input port, and the second electrode layer of the two magnetic storage units is electrically connected to the output port; the third electrode layer of the first magnetic storage unit is electrically connected to the first voltage source interface, and the third electrode layer of the second magnetic storage unit is electrically connected to the second voltage source interface.

7. A logic module, characterized in that: comprising two magnetic storage units according to any one of claims 1 to 5, wherein the two magnetic storage units are respectively a first magnetic storage unit and a second magnetic storage unit; The first magnetic storage unit is arranged in parallel with the second magnetic storage unit, a first exchange bias field generated by the first antiferromagnetic layer in the first magnetic storage unit in the first free layer is parallel to the first exchange bias field generated by the first antiferromagnetic layer in the second magnetic storage unit in the first free layer, and a second exchange bias field generated by the second antiferromagnetic layer in the first magnetic storage unit in the second free layer is parallel to the second exchange bias field generated by the second antiferromagnetic layer in the second magnetic storage unit in the second free layer; The first piezoelectric top electrode and the second piezoelectric top electrode of the first magnetic storage unit are electrically connected to the first input interface, the first electrode layer of the first magnetic storage unit is electrically connected to the second input port, and the third electrode layer of the first magnetic storage unit is electrically connected to the first voltage source port; The first piezoelectric top electrode and the second piezoelectric top electrode of the second magnetic storage unit are electrically connected to the second input interface, the first electrode layer of the second magnetic storage unit is electrically connected to the first input port, and the third electrode layer of the second magnetic storage unit is electrically connected to the second voltage source port; The second electrode layers of the two magnetic storage units are electrically connected to the output port.

8. A logic device, characterized in that: Comprising a logic module as described in claim 6 or 7, wherein the first voltage source port is used to input a supply voltage, the second voltage source port is grounded, and the second input port is used to input half of the supply voltage; the first input port is used to input a signal to be processed, and the output interface is used to output an inverted signal that is inverted to the signal to be processed.

9. A logic device, characterized in that: Comprising a logic module as described in claim 6 or 7, wherein the second voltage source port is used to input a power supply voltage, the first voltage source port is grounded, and the second input port is used to input half of the power supply voltage; and the voltage between the first input port and the output interface behaves as buffer logic.

10. A logic device, characterized in that: comprising four logic devices as claimed in claim 8 or 9, wherein the four logic devices are respectively a first logic device, a second logic device, a third logic device and a fourth logic device; The output ports of the first logic device, the second logic device and the third logic device are electrically connected to the first input port of the fourth logic device; The second input ports of the four logic devices are used to input half of the supply voltage; The voltages of the first input ports of the first logic device, the second logic device, and the third logic device and the voltage of the output port of the fourth logic device perform majority decision logic.

11. An operational amplifier, characterized in that: Comprising a logic module as described in claim 6 or 7, wherein the first voltage source port is used to input a supply voltage, the second input port is used to input a negative supply voltage, the first input port and the second input port are used to input a differential signal, and the output port is used to output an amplified signal.

Images