Radio frequency loop adjusting system, adjusting method and semiconductor device process machine table

Abstract

The invention discloses a radio frequency loop adjusting system, an adjusting method and a process machine table of a semiconductor device. The adjusting system comprises a first radio frequency transmitter and a second radio frequency transmitter which respectively provide a first radio frequency current value for the first reaction cavity and a second radio frequency current value for the second reaction cavity; the current detection device collects a first radio frequency current value and a second radio frequency current value; the controller is configured to obtain a radio frequency current ratio of the first radio frequency current value and the second radio frequency current value based on the first radio frequency current value and the second radio frequency current value; substituting the radio frequency current proportion into the first fitting formula and the second fitting formula to obtain a phase synchronization compensation value of the second radio frequency current; providing a target radio frequency current; and adjusting the first radio-frequency current value and the second radio-frequency current value based on the target radio-frequency current and the phase synchronization compensation value, so that the deposition rates of the thin films in the two reaction cavities are consistent. According to the invention, crosstalk between machine chambers can be reduced, film forming rates in the chambers are kept consistent, and process errors are reduced.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor manufacturing, and in particular to a radio frequency loop adjustment system, a process machine for semiconductor devices, a radio frequency loop adjustment method, and a computer-readable storage medium. Background Art

[0002] In existing dual-chamber semiconductor device process machines, such as plasma enhanced chemical vapor deposition (PECVD) equipment, each reaction chamber is equipped with an independent power supply, that is, multiple power supplies are required. When multiple power supplies are used in PECVD equipment without phase synchronization, the output waveform of each power supply may be in a different phase, which will cause them to generate peak current and voltage at different time points, thereby generating electromagnetic fields that interfere with each other. This interference will affect the stability of the plasma and cause uneven film deposition in the reaction chamber. Phase synchronization unifies the phase of each power supply so that each power supply generates voltage and current peaks at the same time point, thereby reducing the possibility of mutual interference.

[0003] Therefore, in order to solve the cavity crosstalk phenomenon between the two chambers in the process machine, the two power supplies can be adjusted to phase synchronization. The current power phase synchronization method is to adjust the phases of the two initial RF power signals to make the phase difference zero in the initial stage of applying the respective RF power signals to the two reaction chambers. However, due to some errors in the hardware in the two reaction chambers, for example, the hardware errors may include but are not limited to the thickness of aluminum fluoride of the aluminum heating plate, the depth of the RF grounding metal mesh of the ceramic heating plate, the accuracy of the surface treatment of the spray plate, the mechanical tolerance of the side ceramic parts, the uneven gas distribution of the one-to-two gas pipeline, and the human installation tolerance, etc., which leads to process deviations in the deposited thin film.

[0004] Moreover, as time goes by, there will still be a phase difference between the waveforms of the RF power signals of the two power supplies, so crosstalk between the reaction chambers will still occur. Furthermore, the RF instability in the two reaction chambers will cause unstable process performance and even affect the matching work between the hardware, resulting in a mismatch, and the RF total reflection will cause the machine to shut down. Moreover, in the case where the dual-chamber process is not allowed to adjust the parameter (recipe) settings during the process, there are always small errors.

[0005] In order to solve the above-mentioned problems existing in the prior art, this field is in urgent need of a RF circuit adjustment technology, which can automatically and in real time adjust the phase of the RF power signal in each reaction chamber to be unified without adjusting the parameter settings during the process, thereby reducing the crosstalk phenomenon between chambers, and can also adjust the film formation rate in real time, so that the film formation rate between each chamber is consistent, thereby reducing process errors. Summary of the invention

[0006] A brief summary of one or more aspects is given below to provide a basic understanding of these aspects. This summary is not an exhaustive overview of all conceived aspects, and is neither intended to identify the key or decisive elements of all aspects nor to define the scope of any or all aspects. Its only purpose is to give some concepts of one or more aspects in a simplified form as a prelude to a more detailed description that will be given later.

[0007] In order to overcome the above-mentioned defects of the prior art, the present invention provides a radio frequency circuit adjustment system, a process machine for semiconductor devices, a radio frequency circuit adjustment method, and a computer-readable storage medium, which can automatically and in real time adjust the phase of the radio frequency power supply signal in each reaction chamber to be uniform without adjusting the parameter settings during the process, thereby reducing the crosstalk phenomenon between chambers, and can also adjust the film formation rate in real time, so that the film formation rate between each chamber is consistent, thereby reducing the process error.

[0008] Specifically, the above-mentioned RF loop adjustment system provided according to the first aspect of the present invention includes: a first RF transmitter and a second RF transmitter, respectively used to provide a first RF current value into a first reaction chamber and a second RF current value into a second reaction chamber; a current detection device, used to collect the first RF current value and the second RF current value; and a controller, configured to: obtain an RF current ratio of the first RF current and the second RF current based on the first RF current value and the second RF current value; substitute the RF current ratio into a first fitting formula and a second fitting formula to obtain a phase synchronization compensation value of the second RF current, wherein the first fitting formula includes a phase angle and current relationship of the first RF current, and the second fitting formula includes a phase angle and current relationship of the second RF current; provide a target RF current via the first RF generator; and adjust the first RF current value and the second RF current value based on the target RF current and the phase synchronization compensation value to make the film deposition rates in the first reaction chamber and the second reaction chamber consistent.

[0009] Furthermore, in some embodiments of the present invention, it also includes: a signal separator coupled to the first RF transmitter and the second RF transmitter, and the controller is also configured to: during the machine test process, generate a first RF power signal provided to the first reaction chamber and a second RF power signal provided to the second reaction chamber via the signal separator.

[0010] Furthermore, in some embodiments of the present invention, during the machine test process, the step of generating a first RF power signal provided to the first reaction chamber and a second RF power signal provided to the second reaction chamber via the signal separator includes: the first RF transmitter outputs a sinusoidal wave signal as a reference signal for phase synchronization of the two reaction chambers; and via the signal separator, the sinusoidal wave signal is divided into two synchronization signals, which are outputted back to the first RF transmitter as the first RF power signal and outputted to the second RF transmitter as the second RF power signal.

[0011] Further, in some embodiments of the present invention, the step of obtaining the RF current ratio of the first RF current and the second RF current based on the first RF current value and the second RF current value includes: obtaining the first RF current value of the first RF power signal and the second RF current value of the second RF power signal through the current detection device; and obtaining the RF current ratio of the first RF current and the second RF current, wherein the formula of the RF current ratio is as follows:

[0012] I2=α-βI1

[0013] Wherein, I1 represents the first RF current value, I2 represents the second RF current value, β represents the proportionality coefficient, and α represents the offset compensation.

[0014] Furthermore, in some embodiments of the present invention, the first RF transmitter and the second RF transmitter are respectively connected to heating plates in their respective reaction chambers, and the thin film deposition rate on the first heating plate and the thin film deposition rate on the second heating plate are adjusted by adjusting the first RF current on the first heating plate and the second RF current on the second heating plate.

[0015] Furthermore, in some embodiments of the present invention, the length of the RF line from the signal separator to the CEX feeding point of the first RF transmitter is consistent with the length of the RF line from the signal separator to the CEX feeding point of the second RF transmitter.

[0016] Further, in some embodiments of the present invention, the step of substituting the RF current ratio into the first fitting formula and the second fitting formula to obtain the phase synchronization compensation value of the second RF current includes: obtaining test data of the machine, wherein the test data includes the first RF current value and the second RF current value during the test; based on the first RF current value and the second RF current value, obtaining the first fitting formula and the second fitting formula, wherein the formula of the first fitting formula is as follows:

[0017] offset1=AI1+B

[0018] Wherein, offset1 represents the phase compensation value of the first RF current, I1 represents the first RF current value, A is the proportional coefficient, B is the offset compensation, and the formula of the second fitting formula is as follows:

[0019] offset2=CI2+D

[0020] Among them, offset2 represents the phase compensation value of the second RF current, I2 represents the second RF current value, C is the proportional coefficient, and D is the offset compensation; and the RF current ratio is substituted into the first fitting formula and the second fitting formula to obtain the phase synchronization compensation value.

[0021] Furthermore, in some embodiments of the present invention, the test data also includes a first film thickness test value in the first reaction chamber and a second film thickness test value in the second reaction chamber, and the step of obtaining the first fitting formula and the second fitting formula also includes: based on the first fitting formula and the second fitting formula, quadratic fitting is performed based on the first film thickness test value and the second film thickness test value to obtain a third fitting formula and a fourth fitting formula, wherein the third fitting formula includes the relationship between the phase angle, film thickness and current of the first RF current, and the fourth fitting formula includes the relationship between the phase angle, film thickness and current of the second RF current.

[0022] Further, in some embodiments of the present invention, the step of adjusting the first RF current value and the second RF current value based on the target RF current and the phase synchronization compensation value so that the thin film deposition rates in the first reaction chamber and the second reaction chamber are consistent includes: assigning the phase synchronization compensation value between the second RF current and the target RF current to the second RF transmitter; synchronously adjusting the first RF current value and the second RF current value so that the first RF current value and the second RF current value tend to be consistent; and in response to the first RF current value and the second RF current value reaching consistency, the thin film deposition rates in the first reaction chamber and the second reaction chamber are consistent.

[0023] In addition, the process machine of the semiconductor device provided according to the second aspect of the present invention comprises: two reaction chambers, each of which performs a thin film deposition process, wherein the upper electrodes in the two reaction chambers are located in the same shielding cover; an isolation cover plate, disposed between the two reaction chambers, for isolating the RF signal interference between the two reaction chambers; and the RF loop adjustment system provided by the first aspect of the present invention, for adjusting the first RF current value in the first reaction chamber and the RF current value in the second reaction chamber, so that the thin film deposition rates in the first reaction chamber and the second reaction chamber are consistent.

[0024] In addition, the above-mentioned RF loop adjustment method provided according to the third aspect of the present invention includes the following steps: providing a first RF current value to the first reaction chamber and a second RF current value to the second reaction chamber respectively via the first RF transmitter and the second RF transmitter in the RF loop adjustment system in the process tool of the semiconductor device provided by the second aspect of the present invention; obtaining an RF current ratio of the first RF current and the second RF current based on the first RF current value and the second RF current value; substituting the RF current ratio into a first fitting formula and a second fitting formula to obtain a phase synchronization compensation value of the second RF current, wherein the first fitting formula includes a phase angle and current relationship of the first RF current, and the second fitting formula includes a phase angle and current relationship of the second RF current; providing a target RF current via the first RF generator; and adjusting the first RF current value and the second RF current value based on the phase synchronization compensation value to make the film deposition rates in the first reaction chamber and the second reaction chamber consistent.

[0025] In addition, according to a fourth aspect of the present invention, there is also provided a computer-readable storage medium on which computer instructions are stored. When the computer instructions are executed by a processor, the above-mentioned radio frequency loop adjustment method provided by the third aspect of the present invention is implemented. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] The above features and advantages of the present invention can be better understood after reading the detailed description of the embodiments of the present disclosure in conjunction with the following drawings. In the drawings, the components are not necessarily drawn to scale, and components with similar related properties or features may have the same or similar reference numerals.

[0027] Figure 1 A schematic structural diagram of a semiconductor device process platform provided according to some embodiments of the present invention is shown;

[0028] Figure 2 A schematic structural diagram of a radio frequency loop adjustment system in a process machine according to some embodiments of the present invention is shown;

[0029] Figure 3 A flow chart of a radio frequency loop adjustment method provided according to some embodiments of the present invention is shown;

[0030] Figure 4 A flow chart of a radio frequency loop adjustment method provided according to a specific embodiment of the present invention is shown;

[0031] Figure 5A A schematic diagram of a curve showing the phase angle and current of a first RF power source and a second RF power source provided according to some embodiments of the present invention; and

[0032] Figure 5B A schematic diagram of a curve showing the phase angle and film thickness of a first RF power source and a second RF power source provided according to some embodiments of the present invention is shown.

[0033] Reference numerals:

[0034] 100 Process equipment for semiconductor devices;

[0035] 110 first reaction chamber;

[0036] 120 second reaction chamber;

[0037] 130 shielding cover;

[0038] 140 Isolation cover;

[0039] 150 Spray plate;

[0040] 161 a first radio frequency power supply matcher;

[0041] 162 a second radio frequency power supply matcher;

[0042] 170 heating plate;

[0043] 200 RF loop adjustment system;

[0044] 210 first radio frequency generator;

[0045] 220 second radio frequency generator;

[0046] 211, 221 CEX feed points;

[0047] 212, 222 CEX output points;

[0048] 230 current detection device;

[0049] 240 signal separator;

[0050] 241, 242 RF lines;

[0051] Steps S310 to S350;

[0052] Steps S410 to S460; and

[0053] 510, 520, 530, 540 curves. DETAILED DESCRIPTION

[0054] The following specific embodiments illustrate the implementation of the present invention, and those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. Although the description of the present invention will be introduced in conjunction with the preferred embodiment, this does not mean that the features of this invention are limited to this implementation. On the contrary, the purpose of introducing the invention in conjunction with the implementation is to cover other options or modifications that may be extended based on the claims of the present invention. In order to provide a deep understanding of the present invention, the following description will include many specific details. The present invention can also be implemented without using these details. In addition, in order to avoid confusion or blurring the focus of the present invention, some specific details will be omitted in the description.

[0055] In the description of the present invention, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0056] In addition, the terms "upper", "lower", "left", "right", "top", "bottom", "horizontal" and "vertical" used in the following description should be understood as the directions shown in the paragraph and the related drawings. Such relative terms are only used for the convenience of description and do not mean that the device described therein must be manufactured or operated in a specific direction, and therefore should not be understood as limiting the present invention.

[0057] It is understood that although the terms "first", "second", "third", etc. may be used herein to describe various components, regions, layers and / or parts, these components, regions, layers and / or parts should not be limited by these terms, and these terms are only used to distinguish different components, regions, layers and / or parts. Therefore, the first component, region, layer and / or part discussed below may be referred to as a second component, region, layer and / or part without departing from some embodiments of the present invention.

[0058] As mentioned above, in order to solve the cavity crosstalk phenomenon between the two chambers in the process machine, the two power supplies can be adjusted to phase synchronization. The current power phase synchronization method is to adjust the phases of the two initial RF power signals to make their phase difference zero in the initial stage of applying the respective RF power signals to the two reaction chambers, but there are some errors in the hardware in the two reaction chambers. Moreover, as time goes by, there will still be a phase difference between the waveforms of the RF power signals of the two power supplies, so that crosstalk between the reaction chambers will still occur. Furthermore, the instability of the RF in the two reaction chambers will cause unstable process performance and even affect the matching work between the hardware, resulting in a failure to match, thereby causing the machine to shut down due to total RF reflection.

[0059] In order to solve the above-mentioned problems existing in the prior art, the present invention provides a radio frequency circuit adjustment system, a process machine for semiconductor devices, a radio frequency circuit adjustment method, and a computer-readable storage medium, which can automatically and in real time adjust the phase of the radio frequency power supply signal in each reaction chamber to be uniform without adjusting the parameter settings during the process, thereby reducing the crosstalk phenomenon between chambers, and can also adjust the film formation rate in real time, so that the film formation rate between each chamber is consistent, thereby reducing the process error.

[0060] In some non-limiting embodiments, the RF loop adjustment system provided in the first aspect of the present invention can be configured in the process tool of the semiconductor device provided in the second aspect of the present invention, and used to implement the RF loop adjustment method provided in the third aspect of the present invention.

[0061] Specifically, in some non-limiting embodiments, the computer-readable storage medium provided in the fourth aspect of the present invention stores computer instructions, which, when executed by a processor, can be used to implement the RF loop adjustment method provided in the third aspect of the present invention.

[0062] The working principle of the above-mentioned RF loop adjustment system will be described below in conjunction with some embodiments of process machines for semiconductor devices and RF loop adjustment methods. Those skilled in the art will understand that the embodiments of process machines for semiconductor devices and RF loop adjustment methods are only some non-restrictive implementation methods provided by the present invention, which are intended to clearly demonstrate the main concept of the present invention and provide some specific solutions that are convenient for the public to implement, rather than to limit all working modes or all functions of the RF loop adjustment system. Similarly, the RF loop adjustment system is also only a non-restrictive implementation method provided by the present invention, and does not constitute a limitation on other configuration objects in the process machines for these semiconductor devices, and the implementation subjects of each step in the RF loop adjustment method.

[0063] Please see Figure 1, Figure 1 A schematic structural diagram of a semiconductor device process platform provided according to some embodiments of the present invention is shown.

[0064] like Figure 1 As shown, in some embodiments of the present invention, a process machine 100 for a semiconductor device may include two reaction chambers, a first reaction chamber 110 and a second reaction chamber 120. Each reaction chamber may include a heating plate 170 for carrying a substrate for a thin film deposition process. A shower plate 150 may be provided above each reaction chamber, and a process gas may be sprayed onto the substrate on the heating plate 170 below through the shower plate 150 to deposit a thin film on the surface of the substrate. A first RF power matcher 161 and a second RF power matcher 162 may also be connected above the first reaction chamber 110 and the second reaction chamber 120, which are devices for matching the impedance between the RF power supply and the load, to ensure that the RF power supply can effectively transmit energy to the load.

[0065] In some optional embodiments, the semiconductor device process machine 100 can be a PECVD process machine. The RF power supply can be arranged outside the reaction chamber, and its output energy can be connected to the matching RF input port of a single reaction chamber via an RF copper tape, and the matching RF output port can be connected to the shower plate 150 via the copper tape. That is, in this embodiment, the two reaction chambers can be respectively connected to the external first RF generator and the second RF generator as the RF power supplies of the two reaction chambers, and used to provide RF signals to the corresponding reaction chambers.

[0066] Furthermore, each reaction chamber may include an upper electrode and a lower electrode connected to an external RF generator. Under the action of the electric field excited by the RF source, the process gas may be ionized to form plasma, causing the gaseous substances containing the film components to undergo a chemical reaction, thereby achieving the growth of the film material on the substrate. Optionally, the upper electrode may be located in the shower plate 150, and the lower electrode may be disposed in the heating disk 170.

[0067] Furthermore, if Figure 1As shown, since the upper electrodes in the first reaction chamber 110 and the second reaction chamber 120, and the copper strip of the spray plate matched to the spray plate 150 are all in the same shielding cover 130, there is spatial radiation between the two reaction chambers, which leads to mutual interference. Therefore, in order to solve this problem, an isolation cover 140 can be provided between the first reaction chamber 110 and the second reaction chamber 120 to isolate the RF signal interference between the two reaction chambers. Moreover, even in the actual layout of the isolation cover 140, there may be some gaps in the isolation cover 140 due to engineering factors, but more than 90% effective shielding can be performed. However, despite this, the isolation effect in the two reaction chambers is still not very ideal. In this embodiment, if a crosstalk problem occurs between the two chambers, the RF instability in each reaction chamber will cause unstable process performance, and even affect the matching work between the hardware, resulting in failure to match, thereby causing the machine to shut down due to RF total reflection.

[0068] In this regard, the semiconductor device process machine 100 may further include a radio frequency loop adjustment system. The radio frequency loop adjustment system may automatically and in real time adjust the first radio frequency current value in the first reaction chamber 110 and the radio frequency current value in the second reaction chamber 120 during the thin film deposition process in the two reaction chambers, thereby automatically and in real time adjusting the film formation rate in the first reaction chamber 110 and the second reaction chamber 120, so that the film deposition rate in the first reaction chamber 110 and the second reaction chamber 120 is consistent, reducing the film formation error in different reaction chambers, improving the uniformity of film formation in multiple chambers, and thus improving the overall film formation quality of the semiconductor device process machine.

[0069] Specifically, see Figure 2 , Figure 2 A schematic structural diagram of a radio frequency loop adjustment system in a process machine according to some embodiments of the present invention is shown.

[0070] like Figure 2 As shown, in some embodiments of the present invention, the RF loop adjustment system 200 may include a first RF generator 210 (Radio Frequency Generator, RFG), a second RF generator 220, a current detection device 230 and a controller (not shown in the drawings). The first RF generator 210 and the second RF generator 220 may be used to provide a first RF current value to the first reaction chamber 110 and a second RF current value to the second reaction chamber 120, respectively. The current detection device 2130 may be used to collect the first RF current value and the second RF current value.

[0071] Optionally, the first RF generator 210 can be connected to the first heating disk in the first reaction chamber 110, and the second RF generator 220 can be connected to the second heating disk in the second reaction chamber 120. By adjusting the first RF current on the first heating disk and the second RF current on the second heating disk, the film deposition rate on the first heating disk and the film deposition rate on the second heating disk are adjusted respectively. Correspondingly, in this embodiment, the current detection device 230 can detect the current value on the heating disk.

[0072] The controller may be configured to execute the steps of the RF loop adjustment method provided in another aspect of the present invention. Figure 3 , Figure 3 A flowchart of a radio frequency loop adjustment method provided according to some embodiments of the present invention is shown. Figure 4 Common understanding, Figure 4 A flow chart of a radio frequency loop adjustment method provided according to a specific embodiment of the present invention is shown.

[0073] First, if Figure 3 As shown, in some embodiments of the present invention, the RF loop adjustment method may include the following steps. First, step S310 may be performed: providing a first RF current value to the first reaction chamber and providing a second RF current value to the second reaction chamber via a first RF transmitter and a second RF transmitter in an RF loop adjustment system in a process tool of a semiconductor device.

[0074] Specifically, it can be combined Figure 2 It is commonly understood that in some embodiments, the RF loop adjustment system 200 may further include a signal separator 240. For example, the signal separator 240 may be a two-way control board to divide the original signal into two. The signal separator 240 may be coupled to the first RF generator 210 and the second RF generator 220. The controller may also be configured to generate a first RF power signal provided to the first reaction chamber 110 and a second RF power signal provided to the second reaction chamber 120 via the signal separator 240 during the machine test.

[0075] Step S310 may further include the following process: the controller may control the CEX output point 212 (cex out) of the first RF generator 210 to always output a sine wave signal as a reference signal for phase synchronization of the two reaction chambers. This sine wave signal is divided into two by the signal separator 240, and is divided into two synchronization signals, one of which is output back to the first RF generator 210 as a first RF power signal, and the other is output to the second RF generator 220 as a second RF power signal. In other words, after passing through the signal separator 240, the sine wave signal can be input into the CEX feed point 211 (cex in) of the first RF generator 210 and the CEX feed point 221 (cex in) of the second reaction chamber 120 as synchronization signals of two RF power supplies.

[0076] Further, in some preferred embodiments, the length of the RF line 241 from the signal separator 240 to the CEX feed point 211 of the first RF generator 210 can be preferably consistent with the length of the RF line 242 from the signal separator 240 to the CEX feed point 221 of the second RF generator 220. Since the two sinusoidal wave signals output from the output port of the one-to-two signal separator 240 have the same phase, in order to ensure that the signal phases received by the two RF generators are also the same, the transmission distances of the signal separator 240 and the CEX feed points 211 and 221 of the RF generator can be set to be the same, so that the lengths of the RF lines 241 and 242 are set to be consistent, ensuring that the paths taken by the two RF power signals are of the same length, so as to ensure that the phases of the two signals are the same, so as to reduce the generation of RF crosstalk between chambers. If the paths taken by the two RF power signals are of different lengths, it is easy to cause the phases of the two signals to be inconsistent.

[0077] Optionally, the material of the RF lines 231 and 232 is preferably the same material to ensure that the two RF power supply signals have the same transmission speed, thereby improving the phase synchronization of the two signals and reducing the generation of RF crosstalk between chambers.

[0078] Afterwards, continue as Figure 3 As shown, step S320 may be performed: based on the first RF current value and the second RF current value, a RF current ratio of the first RF current and the second RF current is obtained.

[0079] Specifically, combined Figure 2 and Figure 4As shown, in some embodiments, step S410 can be performed: detecting the RF current value of the heating disks in the first reaction chamber 110 and the second reaction chamber 120. The first RF current value of the first RF power signal on the first heating disk and the second RF current value of the second RF power signal on the second heating disk can be detected by the current detection device 230. Afterwards, step S420 can be performed to obtain the RF current ratio of the first RF current and the second RF current, wherein the formula of the RF current ratio can be as follows:

[0080] I2=α-βI1

[0081] Wherein, I1 represents the first RF current value, I2 represents the second RF current value, β represents the proportional coefficient, and α represents the offset compensation. For example, in some optional embodiments, in order to satisfy the consistency of the thickness of the thin films generated in the two reaction chambers, the RF current ratio that needs to be satisfied by the RF currents in the two reaction chambers can be set to I2=3.125-1.125I1. Since each process machine may satisfy different ratios, it is necessary to test the RF current ratio that the current machine needs to satisfy during the installation stage. Optionally, this ratio can also be retested and calibrated regularly according to the actual application of the machine.

[0082] Then, continue as Figure 3 As shown, step S330 may be performed: substituting the RF current ratio into the first fitting formula and the second fitting formula to obtain a phase synchronization compensation value of the second RF current.

[0083] Specifically, in some embodiments of the present invention, the process machine to be used for the thin film deposition process may be determined first. According to the actual state of each machine, the test data of the corresponding machine is obtained, wherein the test data may include the first RF current value and the second RF current value during the test. Then, based on the first RF current value and the second RF current value, a single variable test of the output value from the CEX output points 212 and 222 of the RF generator may be performed first.

[0084] Specifically, a first fitting formula and a second fitting formula can be obtained based on the first RF current value and the second RF current value, wherein the first fitting formula may include the relationship between the phase angle and the current of the first RF current, and the second fitting formula includes the relationship between the phase angle and the current of the second RF current.

[0085] Specifically, the formula of the first fitting formula can be as follows:

[0086] offset1=AI1+B

[0087] Wherein, offset1 represents the phase compensation value of the first RF current, I1 represents the first RF current value, A is the proportionality coefficient, and B is the offset compensation. The formula of the second fitting formula can be as follows:

[0088] offset2=CI2+D

[0089] Wherein, offset2 represents the phase compensation value of the second RF current, I2 represents the second RF current value, C is the proportionality coefficient, and D is the offset compensation.

[0090] Through the test data of the first RF current and the second RF current, the relationship between the phase angle and the current of the first RF current in the first reaction chamber 110 in the current semiconductor device process machine 100, and the relationship between the phase angle and the current of the second RF current in the second reaction chamber 120 can be obtained. For example, in some optional embodiments, the relationship between the phase angle and the current of the first RF current in the first reaction chamber 110 can be offset1=-0.2I1+13.23, and the relationship between the phase angle and the current of the second RF current in the second reaction chamber 120 can be offset2=0.47I2+12.37.

[0091] Then, if Figure 4 As shown, steps S430 and S440 may be performed, and the RF current ratio may be substituted into the first fitting formula and the second fitting formula, so as to obtain a phase synchronization compensation value (CEX offset) between the second RF current output by the second RF generator 220 and the first RF current output by the first RF generator 210.

[0092] Specifically, see Figure 5A , Figure 5A A schematic diagram of a curve showing the phase angle and current of a first RF power source and a second RF power source provided according to some embodiments of the present invention is shown.

[0093] like Figure 5A As shown, in some embodiments, the ordinate refers to the current value on the heating disk, the abscissa represents the phase synchronization compensation value (cex offset value), off represents turning off the phase synchronization function, and the first reaction chamber / second reaction chamber represents that only a single reaction chamber is energized, and the RF system of the other reaction chamber is turned off. Curve 510 represents the current change of the heating disk in the first reaction chamber 110, and curve 520 represents the current change of the heating disk in the second reaction chamber 120. It can be seen that under different phase synchronization compensation value conditions, the RF current flowing through the lower electrodes between different cavities is inconsistent. When the phase difference is 0, it is consistent with when the function is not turned on, indicating that it is not affected by turning on the cex function.

[0094] In some preferred embodiments, the test data may also include a first film thickness test value deposited in the first reaction chamber 110 and a second film thickness test value deposited in the second reaction chamber 120. After the steps of obtaining the first fitting formula and the second fitting formula, it may also include: on the basis of the first fitting formula and the second fitting formula, based on the first film thickness test value and the second film thickness test value, quadratic fitting is performed to obtain a third fitting formula and a fourth fitting formula, wherein the third fitting formula may include the phase angle, film thickness and current relationship of the first RF current, and the fourth fitting formula may include the phase angle, film thickness and current relationship of the second RF current. In other words, a fitting formula suitable for the current machine may be fitted through quadratic fitting according to different phase test data, film thickness test data and current test data.

[0095] Specifically, see Figure 5B , Figure 5B A schematic diagram of a curve showing the phase angle and film thickness of a first RF power source and a second RF power source provided according to some embodiments of the present invention is shown.

[0096] like Figure 5B As shown, in other embodiments, the ordinate refers to the thickness of the process film The horizontal axis represents the phase synchronization compensation value (cex offset value), off represents turning off the phase synchronization function, and the first reaction chamber / the second reaction chamber represents the RF in a single reaction chamber, at which time the RF system of the other reaction chamber is turned off. Curve 530 represents the thickness of the film in the first reaction chamber 110, and curve 540 represents the thickness of the film in the second reaction chamber 120. It can be seen that under different phase synchronization compensation value conditions, the inconsistent film formation rates in different cavities cause inconsistent film thickness. The phase difference is 0 and is consistent with when the function is not turned on, indicating that it is not the influence caused by turning on the cex function. It can be further reflected that the current size of the lower electrode RF will affect the film thickness.

[0097] Furthermore, in addition to Figure 5A and 5B The first fitting formula and the second fitting formula, as well as the third fitting formula and the fourth fitting formula, which are fitted according to the current and film thickness corresponding to the two sets of data of cex0 and cex90, can also be used for more parameter tests to more accurately fit the machine fitting formula including more process parameters.

[0098] Please go back Figure 3 As shown, step S340 may then be performed: providing a target radio frequency current via the first radio frequency generator.

[0099] Specifically, the controller may control the first RF generator 210 to output a first RF current as the target RF current.

[0100] Then, step S350 may be performed: based on the target RF current and the phase synchronization compensation value, adjusting the first RF current value and the second RF current value to make the film deposition rates in the first reaction chamber and the second reaction chamber consistent.

[0101] Specifically, if Figure 2 As shown, in some embodiments, the phase synchronization compensation value between the second RF current and the target RF current can be assigned to the second RF generator 220. Then, the controller can synchronously adjust the first RF current value and the second RF current value of the first RF generator 210 and the second RF generator 220 according to the phase synchronization compensation value of the second RF current, so that the adjusted first RF current value and the second RF current value tend to be consistent. In an embodiment of the present invention, adjusting the output energy of the RF generator can change the thickness (thick, THK) of the deposited film. Although the phase synchronization compensation value is for the second RF current, if only the phase value of the second RF generator 220 is adjusted, the current in the lower electrode heating plate in the two reaction chambers will be affected at the same time. Because the RF phases in the two reaction chambers have different differences, the RF paths of the two reaction chambers at the same time will change, thereby affecting the RF current of the lower electrode.

[0102] In this embodiment, the film formation rate on the heating disks in the two reaction chambers can be adjusted by adjusting the first RF current value on the first heating disk and the second RF current value on the second heating disk. When the RF current value increases, the film deposition rate on the heating disk becomes faster, and conversely, when the RF current value is reduced, the film deposition rate on the heating disk becomes slower, thereby achieving the effect of real-time fine-tuning of the deposition rate.

[0103] When the adjusted first RF current value on the first heating disk and the adjusted second RF current value on the second heating disk are consistent, the film deposition rates in the first reaction chamber 110 and the second reaction chamber 120 are consistent, thereby further reducing the process error (mismatch) between the chambers.

[0104] Those skilled in the art can understand that the above-mentioned scheme of using the first RF current output by the first RF generator 210 as the target RF current is only a non-limiting implementation mode provided by the present invention, which is intended to clearly demonstrate the main concept of the present invention and provide a specific scheme that is convenient for the public to implement, rather than to limit the protection scope of the present invention. Optionally, in an alternative embodiment, those skilled in the art can also use the second RF current output by the second RF generator 220 as the target RF current based on the concept of the present invention to obtain the phase synchronization compensation value of the first RF current to achieve the same technical effect.

[0105] In the above embodiment of the present invention, the RF loop adjustment system 200 is set between the RF generators of the two reaction chambers. Based on the process performance in the two reaction chambers, the phase difference of the RF signal can be automatically adjusted in real time to make the RF current values ​​in the two reaction chambers basically consistent, thereby solving the process error caused by the slight difference in the RF loops (RF Loop) between the multiple chambers, and meeting the parameter settings in different process processes. In the case where the adjustment (recipe) setting is not allowed, there is another means of adjusting the machine.

[0106] Those skilled in the art can also understand that the above-mentioned solution of the semiconductor device process machine 100 including two reaction chambers is only a non-limiting implementation method provided by the present invention, which is intended to clearly demonstrate the main concept of the present invention and provide a specific solution that is convenient for the public to implement, rather than to limit the protection scope of the present invention. The semiconductor device process machine 100 can also include multiple reaction chambers, and those skilled in the art can also adjust the phase synchronization of the RF power supply signals in the multiple reaction chambers based on the concept of the present invention to prevent crosstalk between the multiple chambers and improve the quality of film formation in the multiple chambers.

[0107] Although the above methods are illustrated and described as a series of actions for simplicity of explanation, it should be understood and appreciated that these methods are not limited by the order of the actions, because according to one or more embodiments, some actions may occur in a different order and / or concurrently with other actions from those illustrated and described herein or not illustrated and described herein but understandable to those skilled in the art.

[0108] Those skilled in the art will further appreciate that the steps of the methods or algorithms described in conjunction with the embodiments disclosed herein may be directly embodied in hardware, in a software module executed by a processor, or in a combination of the two. The software module may reside in a RAM memory, a flash memory, a ROM memory, an EPROM memory, an EEPROM memory, a register, a hard disk, a removable disk, a CD-ROM, or any other form of storage medium known in the art. An exemplary storage medium is coupled to a processor so that the processor can read and write information from / to the storage medium. In an alternative, a storage medium may be integrated into a processor. The processor and the storage medium may reside in an ASIC. The ASIC may reside in a user terminal. In an alternative, the processor and the storage medium may reside in a user terminal as discrete components.

[0109] In one or more exemplary embodiments, the functions described may be implemented in hardware, software, firmware, or any combination thereof. If implemented as a computer program product in software, each function may be stored on or transmitted by a computer-readable medium as one or more instructions or codes. Computer-readable media include both computer storage media and communication media, including any medium that facilitates the transfer of a computer program from one place to another. Storage media may be any available medium that can be accessed by a computer. As an example and not limitation, such a computer-readable medium may include RAM, ROM, EEPROM, CD-ROM or other optical disk storage, disk storage or other magnetic storage device, or any other medium that can be used to carry or store the desired program code in the form of an instruction or data structure and can be accessed by a computer. Any connection is also properly referred to as a computer-readable medium. For example, if the software is transmitted from a website, a server, or other remote source using a coaxial cable, a fiber optic cable, a twisted pair, a digital subscriber line (DSL), or wireless technologies such as infrared, radio, and microwaves, the coaxial cable, fiber optic cable, twisted pair, DSL, or wireless technologies such as infrared, radio, and microwaves are included in the definition of the medium. Disk and disc as used herein include compact disc (CD), laser disc, optical disc, digital versatile disc (DVD), floppy disk and Blu-ray disc, wherein disk often reproduces data magnetically, while disc reproduces data optically with lasers. Combinations of the above should also be included within the scope of computer-readable media.

[0110] In summary, the present invention provides a radio frequency circuit adjustment system, a process machine for semiconductor devices, a radio frequency circuit adjustment method, and a computer-readable storage medium, which can automatically and in real time adjust the phase of the radio frequency power supply signal in each reaction chamber to be uniform without adjusting the parameter settings during the process, thereby reducing the crosstalk phenomenon between chambers, and can also adjust the film formation rate in real time, so that the film formation rate between each chamber is consistent, thereby reducing process errors.

[0111] The previous description of the disclosure is provided to enable any person skilled in the art to make or use the disclosure. Various modifications to the disclosure will be apparent to those skilled in the art, and the general principles defined herein may be applied to other variations without departing from the spirit or scope of the disclosure. Thus, the disclosure is not intended to be limited to the examples and designs described herein, but should be granted the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A radio frequency loop adjustment system, characterized in that: include: The first radio frequency transmitter and the second radio frequency transmitter are respectively used to provide a first radio frequency current value into the first reaction chamber and a second radio frequency current value into the second reaction chamber; A current detection device, used for collecting the first radio frequency current value and the second radio frequency current value; as well as A controller configured to: obtain a radio frequency current ratio of the first radio frequency current to the second radio frequency current based on the first radio frequency current value and the second radio frequency current value; Substituting the RF current ratio into a first fitting formula and a second fitting formula to obtain a phase synchronization compensation value of the second RF current, wherein the first fitting formula includes a relationship between a phase angle of the first RF current and a current, and the second fitting formula includes a relationship between a phase angle of the second RF current and a current; providing a target RF current via the first RF generator; and adjusting the first RF current value and the second RF current value based on the target RF current and the phase synchronization compensation value to make the film deposition rates in the first reaction chamber and the second reaction chamber consistent.

2. The radio frequency loop adjustment system according to claim 1, characterized in that: Also includes: a signal separator, coupled to the first radio frequency transmitter and the second radio frequency transmitter, The controller is also configured to: During the machine testing process, the signal separator generates a first radio frequency power signal provided to the first reaction chamber and a second radio frequency power signal provided to the second reaction chamber.

3. The radio frequency loop adjustment system according to claim 2, characterized in that: The step of generating a first RF power signal provided to the first reaction chamber and a second RF power signal provided to the second reaction chamber via the signal separator during the machine test includes: The first radio frequency transmitter outputs a sine wave signal as a reference signal for phase synchronization of the two reaction chambers; and The sine wave signal is divided into two synchronization signals through the signal separator and outputted back to the first RF transmitter as the first RF power signal and outputted to the second RF transmitter as the second RF power signal.

4. The radio frequency loop adjustment system according to claim 3, characterized in that: The step of obtaining the radio frequency current ratio of the first radio frequency current to the second radio frequency current based on the first radio frequency current value and the second radio frequency current value comprises: obtaining the first RF current value of the first RF power signal and the second RF current value of the second RF power signal through the current detection device; and Obtaining a radio frequency current ratio of the first radio frequency current to the second radio frequency current, wherein a formula for the radio frequency current ratio is as follows: I2=α-βI1 Wherein, I1 represents the first RF current value, I2 represents the second RF current value, β represents the proportionality coefficient, and α represents the offset compensation.

5. The radio frequency loop adjustment system according to claim 3, characterized in that: The first RF transmitter and the second RF transmitter are respectively connected to the heating plates in their respective reaction chambers, and the film deposition rate on the first heating plate and the film deposition rate on the second heating plate are adjusted by adjusting the first RF current on the first heating plate and the second RF current on the second heating plate.

6. The radio frequency loop adjustment system according to claim 3, characterized in that: The length of the radio frequency line from the signal separator to the CEX feeding point of the first radio frequency transmitter is consistent with the length of the radio frequency line from the signal separator to the CEX feeding point of the second radio frequency transmitter.

7. The radio frequency loop adjustment system as claimed in claim 3, characterized in that: The step of substituting the RF current ratio into the first fitting formula and the second fitting formula to obtain the phase synchronization compensation value of the second RF current includes: Acquire test data of the machine, wherein the test data includes the first radio frequency current value and the second radio frequency current value during the test process; Based on the first RF current value and the second RF current value, the first fitting formula and the second fitting formula are obtained, wherein the formula of the first fitting formula is as follows: offset1=AI1+B Wherein, offset1 represents the phase compensation value of the first RF current, I1 represents the first RF current value, A is the proportional coefficient, B is the offset compensation, The formula of the second fitting formula is as follows: offset2=CI2+D Wherein, offset2 represents the phase compensation value of the second RF current, I2 represents the second RF current value, C is the proportionality coefficient, and D is the offset compensation; and Substitute the radio frequency current ratio into the first fitting formula and the second fitting formula to obtain the phase synchronization compensation value.

8. The radio frequency loop adjustment system according to claim 7, characterized in that: The test data further includes a first film thickness test value in the first reaction chamber and a second film thickness test value in the second reaction chamber, and the step of obtaining the first fitting formula and the second fitting formula further includes: On the basis of the first fitting formula and the second fitting formula, based on the first film thickness test value and the second film thickness test value, a third fitting formula and a fourth fitting formula are obtained by quadratic fitting, wherein the third fitting formula includes the phase angle, film thickness and current relationship of the first RF current, and the fourth fitting formula includes the phase angle, film thickness and current relationship of the second RF current.

9. The radio frequency loop adjustment system according to claim 1, characterized in that: The step of adjusting the first RF current value and the second RF current value based on the target RF current and the phase synchronization compensation value so as to make the film deposition rates in the first reaction chamber and the second reaction chamber consistent comprises: assigning a phase synchronization compensation value between the second radio frequency current and the target radio frequency current to the second radio frequency generator; Synchronously adjusting the first RF current value and the second RF current value so that the first RF current value and the second RF current value tend to be consistent; and In response to the first RF current value and the second RF current value becoming consistent, the film deposition rates in the first reaction chamber and the second reaction chamber become consistent.

10. A semiconductor device processing machine, characterized in that: include: Two reaction chambers, each of which performs a thin film deposition process, wherein the upper electrodes in the two reaction chambers are located in the same shielding cover; an isolation cover plate, disposed between the two reaction chambers, for isolating radio frequency signal interference between the two reaction chambers; and The RF loop adjustment system according to any one of claims 1 to 9 is used to adjust the first RF current value in the first reaction chamber and the RF current value in the second reaction chamber so that the film deposition rates in the first reaction chamber and the second reaction chamber are consistent.

11. A radio frequency loop adjustment method, characterized in that: The following steps are involved: Providing a first RF current value to the first reaction chamber and a second RF current value to the second reaction chamber respectively through a first RF transmitter and a second RF transmitter in the RF loop adjustment system in the semiconductor device process tool as claimed in claim 10; Based on the first RF current value and the second RF current value, obtaining a RF current ratio of the first RF current to the second RF current; Substituting the RF current ratio into a first fitting formula and a second fitting formula to obtain a phase synchronization compensation value of the second RF current, wherein the first fitting formula includes a relationship between a phase angle and a current of the first RF current, and the second fitting formula includes a relationship between a phase angle and a current of the second RF current; providing a target radio frequency current via the first radio frequency generator; and Based on the target RF current and the phase synchronization compensation value, the first RF current value and the second RF current value are adjusted to make the film deposition rates in the first reaction chamber and the second reaction chamber consistent.

12. A computer-readable storage medium having computer instructions stored thereon, characterized in that: When the computer instructions are executed by a processor, the RF loop adjustment method as claimed in claim 11 is implemented.

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