Wafer film pasting method and device

Abstract

Embodiments of the present specification provide a wafer film pasting method and device, wherein the method comprises: providing a wafer protective film, the size of the wafer protective film being greater than the size of a wafer; placing the wafer protective film, so that the edge region of the wafer protective film matches the surface of the wafer that does not need to be protected; placing the wafer, so that the surface of the wafer that does not need to be protected is attached to the edge region of the wafer protective film; and performing a film pasting process, so that the wafer protective film is attached to the surface of the wafer that needs to be protected and the surface of the wafer that does not need to be protected. By using the above scheme, the possibility of the wafer protective film falling off in the plating process can be significantly reduced, and the problem of plating liquid penetration can be effectively improved.

Description

Technical Field

[0001] The embodiments in this specification relate to the field of semiconductor device manufacturing technology, and in particular to a wafer lamination method and apparatus. Background Technology

[0002] In the field of semiconductor device manufacturing technology, before performing the front-side plating process on a wafer, a protective film is usually applied to the back side of the wafer to prevent the plating solution from contaminating the back side of the wafer during the process.

[0003] However, existing wafer lamination methods are very prone to plating solution penetration and protective film peeling. Summary of the Invention

[0004] This specification provides a wafer coating method and apparatus that can significantly reduce the possibility of wafer protective film peeling off during chemical plating processes and effectively improve the problem of chemical plating solution penetration.

[0005] First, this specification provides a wafer bonding method, including:

[0006] A wafer protective film is provided, wherein the size of the wafer protective film is larger than the size of the wafer;

[0007] The wafer protective film is placed such that the shape of the edge region of the wafer protective film matches the surface of the wafer that does not require protection.

[0008] The wafer is placed such that the unprotected surface of the wafer is in contact with the edge region of the wafer protective film;

[0009] A film-coating process is performed to adhere the wafer protective film to the surface of the wafer that needs protection and the surface that does not need protection.

[0010] Optionally, the wafer is concave, the surface of the wafer that needs protection is the concave surface of the wafer, and the surface that does not need protection is the outer surface that communicates with the concave surface; wherein, the outer surface includes the upper surface of the sidewall and the outer side surface of the sidewall that communicate with the concave surface.

[0011] Optionally, placing the wafer protective film such that the shape of the edge region of the wafer protective film matches the unprotected surface of the wafer includes:

[0012] The wafer protective film is placed in a concave state, and the concave direction of the wafer protective film is opposite to the concave direction of the surface of the wafer that needs to be protected, so that the shape of the edge region of the wafer protective film matches the surface of the wafer that does not need to be protected; wherein, the edge region of the wafer protective film includes: a side region of the wafer protective film, and a part of the main body region that communicates with the side region.

[0013] Optionally, placing the wafer protective film in a concave state, with the concave direction of the wafer protective film opposite to the concave direction of the surface of the wafer to be protected, such that the shape of the edge region of the wafer protective film matches the surface of the wafer not to be protected, includes:

[0014] An adsorption assembly is provided, wherein the adsorption assembly has a groove adapted to accommodate the wafer protective film;

[0015] The wafer protective film is adsorbed by the adsorption component, so that the wafer protective film is accommodated in the groove of the adsorption component in a concave state, and the concave direction of the wafer protective film is opposite to the concave direction of the surface of the wafer that needs to be protected, so that the shape of the edge region of the wafer protective film matches the surface of the wafer that does not need to be protected.

[0016] Optionally, placing the wafer such that the unprotected surface of the wafer is in contact with the edge region of the wafer protective film includes:

[0017] The outer surface of the wafer is attached to the edge region of the wafer protective film.

[0018] Optionally, the film-applying process, in which the wafer protective film is adhered to the surface of the wafer to be protected and the surface not to be protected, includes:

[0019] A vacuum is provided in the space between the wafer protective film and the surface of the wafer to be protected;

[0020] Release the vacuum to allow the wafer protective film to adhere to the surface of the wafer that needs protection and the surface that does not need protection.

[0021] Optionally, the wafer is formed into the concave shape using a back-side grinding technique.

[0022] Optionally, the back-side grinding technology includes the Taiko process.

[0023] Optionally, the adsorption component includes a table component that generates suction by releasing a vacuum to adsorb the wafer protective film.

[0024] Optionally, the size difference between the wafer protective film and the wafer is within a preset range.

[0025] Optionally, the preset difference range is 1mm to 2mm.

[0026] This specification also provides a wafer bonding device, comprising:

[0027] An adsorption component is adapted to accommodate a wafer protective film, such that the shape of the edge region of the wafer protective film matches the unprotected surface of the wafer.

[0028] A vacuum assembly is adapted to provide a vacuum in the space between the wafer protective film and the surface of the wafer to be protected for film application, such that the wafer protective film adheres to the surface of the wafer to be protected and the surface not to be protected.

[0029] Optionally, the adsorption component has a groove adapted to accommodate the wafer protective film.

[0030] The wafer bonding method provided in the embodiments of this specification involves providing a wafer protective film larger than the wafer size, further placing the wafer protective film so that the shape of the edge region of the wafer protective film matches the unprotected surface of the wafer, and further placing the wafer so that the unprotected surface of the wafer is in contact with the edge region of the wafer protective film. This allows the wafer protective film to adhere to both the surface to be protected and the unprotected surface of the wafer during the bonding process, thus significantly reducing the possibility of the wafer protective film detaching during the electroless plating process and effectively improving the problem of electroless plating solution penetration.

[0031] Furthermore, the wafer is concave in shape, the surface to be protected is the concave surface of the wafer, and the surface not to be protected is the outer surface communicating with the concave surface. Since the outer surface includes the upper surface of the sidewall communicating with the concave surface and the outer side surface of the sidewall, when performing the film application process, by making the wafer protective film adhere to the surface to be protected and the surface not to be protected of the wafer, the buffer distance between the wafer protective film and the surface to be protected can be increased, thereby further reducing the possibility of the wafer protective film falling off during the electroless plating process and further improving the problem of electroless plating solution penetration.

[0032] Furthermore, by placing the wafer protective film in a concave state, with the concave direction of the wafer protective film opposite to the concave direction of the surface of the wafer to be protected, the shape of the edge region of the wafer protective film matches the surface of the wafer not to be protected. This ensures that during the film application process, the wafer protective film can adhere not only to the surface of the wafer to be protected but also to the surface of the wafer not to be protected. This significantly reduces the possibility of the wafer protective film falling off during the electroless plating process and effectively improves the problem of electroless plating solution penetration.

[0033] Furthermore, the wafer protective film is adsorbed by an adsorption component with a groove, so that the wafer protective film is contained in the groove of the adsorption component in an inward state, and the inward direction of the wafer protective film is opposite to the inward direction of the surface of the wafer that needs protection. This ensures that the shape of the edge region of the wafer protective film matches the surface of the wafer that does not need protection. As can be seen from the above, on the one hand, adsorbing the wafer protective film by the adsorption component not only firmly adsorbs the wafer protective film but also avoids abrasion on it; on the other hand, by containing the wafer protective film in the groove of the adsorption component in an inward state, the relative position between the wafer protective film and the surface of the wafer that needs protection can be easily adjusted, ensuring that the shape of the edge region of the wafer protective film matches the surface of the wafer that does not need protection. Therefore, during the film application process, the wafer protective film can adhere not only to the surface of the wafer that needs protection but also to the surface of the wafer that does not need protection.

[0034] Furthermore, by providing a vacuum in the space between the wafer protective film and the surface of the wafer to be protected, and then releasing the vacuum, not only can the film application process be achieved, allowing the wafer protective film to adhere to both the surface of the wafer to be protected and the surface not to be protected, but also without causing wear to the wafer protective film.

[0035] Furthermore, since the Table component generates suction by releasing a vacuum to adsorb the wafer protective film, it can not only firmly adsorb the wafer protective film, but also will not cause wear to the wafer protective film.

[0036] Furthermore, by providing a wafer protective film whose size maintains a preset difference from the size of the wafer, it can be ensured that during the film application process, the wafer protective film can not only adhere to the surface of the wafer that needs protection, but also to the surface of the wafer that does not need protection. This can significantly reduce the possibility of the wafer protective film falling off during the electroless plating process and effectively improve the problem of electroless plating solution penetration.

[0037] Furthermore, since the size difference between the wafer protective film and the wafer is within the range of 1-2 mm, it not only ensures simultaneous adhesion to both the surfaces of the wafer that require protection and those that do not, but also minimizes the cost of film application. In addition, it avoids the problem of difficulty in applying the wafer protective film due to an unsuitable size. Attached Figure Description

[0038] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only embodiments of this application. For those skilled in the art, other drawings can be obtained based on the provided drawings without creative effort.

[0039] Figures 1a to 1c This diagram illustrates the process of applying a film using existing wafer bonding methods.

[0040] Figure 2 A schematic diagram illustrating the impact of plating solution flow during wafer plating is shown.

[0041] Figure 3 A schematic diagram of the steps of a wafer bonding method in an embodiment of this specification is shown;

[0042] Figure 4 This specification illustrates a step of placing a wafer protective film in an embodiment of the present specification.

[0043] Figure 5 A schematic diagram illustrating the steps of a film application process in an embodiment of this specification is shown;

[0044] Figure 6 A schematic diagram of a wafer bonding device according to an embodiment of this specification is shown;

[0045] Figures 7a to 7c This diagram illustrates the process of applying a wafer lamination method according to the embodiments of this specification.

[0046] Figure 8 This diagram illustrates the impact of plating solution flow during another wafer plating process as described in an embodiment of this specification. Detailed Implementation

[0047] To make the above-mentioned objectives, features, and advantages of this application more apparent and understandable, the specific embodiments of this application are described in detail below with reference to the accompanying drawings. Many specific details are set forth in the following description to provide a thorough understanding of this application. However, this application can be implemented in many other ways different from those described herein, and those skilled in the art can make similar modifications without departing from the spirit of this application. Therefore, this application is not limited to the specific embodiments disclosed below.

[0048] As described in the background section, in the field of semiconductor device manufacturing technology, a protective film is typically applied to the back of the wafer before performing the front-side plating process to prevent the plating solution from contaminating the back of the wafer during the operation. However, existing wafer plating methods are prone to plating solution penetration and protective film peeling.

[0049] To facilitate understanding, we will now analyze the reasons for plating solution penetration and protective film detachment by combining the film application process of an existing wafer bonding method.

[0050] Reference Figures 1a to 1c The diagram shown illustrates the process of applying a film using existing wafer bonding methods. Figure 1a As shown, a wafer protective film 12, slightly smaller than the size of wafer 13, is first pre-cut, and then the wafer protective film 12 is adsorbed by the adsorption component 11; as Figure 1b As shown, after the adsorption component 11 adsorbs the wafer protective film 12, the wafer protective film 12 is then placed on the back side of the wafer 13 under a vacuum environment; combined with Figure 1b and Figure 1c As shown, during the rapid release of vacuum V, since the wafer protective film 12 and the wafer 13 are in a vacuum state, due to the pressure difference between the internal and external environments, the wafer protective film 12 is squeezed to the back of the wafer 13 by the air pressure, thereby forming... Figure 1c The film application status is shown.

[0051] Reference Figure 2 The diagram shown illustrates the impact of plating solution flow during wafer plating. Figure 2 As shown, in the wafer bonding state obtained using the existing wafer bonding method, the portion of the wafer protective film 12 distributed on the bufferable region H of the protective region P of the wafer 13 is too short. During the electroplating process, due to the impact of the electroplating solution flow ( Figure 2 The arrow indicates the flow direction of the plating solution, and the arc indicates the plating solution. This can easily cause the wafer protective film 12 to fall off from the back side of the wafer 13, and the plating solution to penetrate into the back side of the wafer 13, thereby contaminating the metal on the back side of the wafer 13.

[0052] To address the aforementioned problems, this specification provides a wafer protective film application method. By providing a wafer protective film larger than the wafer size, and further placing the wafer protective film so that the shape of its edge region matches the unprotected surface of the wafer, the wafer is further placed so that the unprotected surface of the wafer adheres to the edge region of the wafer protective film. This allows the wafer protective film to adhere to both the protected and unprotected surfaces of the wafer during the application process, significantly reducing the possibility of the wafer protective film detaching during the electroless plating process and effectively improving the problem of electroless plating solution penetration.

[0053] To enable those skilled in the art to better understand and implement the embodiments of this specification, the embodiments of this specification will be described in detail below with reference to the accompanying drawings.

[0054] First, this specification provides a wafer bonding method, referring to... Figure 3 The diagram illustrates the steps of a wafer lamination method, which involves laminating a wafer using the following steps:

[0055] Step A: Provide a wafer protective film, the size of which is larger than the size of the wafer.

[0056] In some embodiments of this specification, the size difference between the wafer protective film and the wafer is within a preset range.

[0057] By using the above embodiments, by providing a wafer protective film whose size maintains a preset difference from the size of the wafer, it can be ensured that during the film application process, the wafer protective film can not only adhere to the surface of the wafer that needs protection, but also to the surface of the wafer that does not need protection. This can significantly reduce the possibility of the wafer protective film falling off during the electroless plating process and effectively improve the problem of electroless plating solution penetration.

[0058] As an optional embodiment, the preset difference range is 1 mm to 2 mm.

[0059] By employing the above embodiments, since the size difference between the wafer protective film and the wafer ranges from 1mm to 2mm, it is possible to ensure simultaneous adhesion to both the surfaces of the wafer that require protection and those that do not, while also minimizing the cost of film application. Furthermore, it avoids the problem of difficulty in applying the wafer protective film due to its unsuitable size.

[0060] It should be noted that the embodiments in this specification do not impose specific limitations on the size difference range between the wafer protective film and the wafer; the above size difference range is only an optional example.

[0061] Step B: Place the wafer protective film so that the shape of the edge region of the wafer protective film matches the unprotected surface of the wafer.

[0062] Step C: Place the wafer such that the unprotected surface of the wafer is in contact with the edge area of ​​the wafer protective film.

[0063] Step D involves applying a protective film to adhere the wafer protective film to the surface of the wafer that needs protection and the surface that does not need protection.

[0064] By employing the above embodiments, by providing a wafer protective film with a size larger than the wafer itself, and further placing the wafer protective film such that the shape of the edge region of the wafer protective film matches the unprotected surface of the wafer, and further placing the wafer such that the unprotected surface of the wafer is in contact with the edge region of the wafer protective film, the wafer protective film can be made to adhere to both the surface to be protected and the unprotected surface of the wafer during the film application process. Therefore, the possibility of the wafer protective film falling off during the electroless plating process can be significantly reduced, and the problem of electroless plating solution penetration can be effectively improved.

[0065] In some embodiments of this specification, the wafer may be concave, with the surface to be protected being the concave surface and the surface not to be protected being the outer surface communicating with the concave surface. Since the outer surface includes the upper sidewall surface communicating with the concave surface and the outer sidewall surface, during the film application process, by attaching the wafer protective film to the surface to be protected and the surface not to be protected, the buffer distance between the wafer protective film and the surface to be protected can be increased, thereby further reducing the possibility of the wafer protective film falling off during the electroless plating process and further improving the problem of electroless plating solution penetration.

[0066] In other embodiments of this specification, the wafer may be formed into the concave shape using a back-side grinding technique.

[0067] As an optional embodiment, the wafer can be formed into a concave shape using the Taiko thinning process. Specifically, the Taiko thinning process retains the outer edge portion of the wafer during grinding, and only grinds and thins the interior of the wafer, thereby forming a concave shape.

[0068] In some embodiments of this specification, step B may specifically include the following steps:

[0069] Step B1: The wafer protective film is placed in a concave state, and the concave direction of the wafer protective film is opposite to the concave direction of the surface of the wafer that needs to be protected, so that the shape of the edge region of the wafer protective film matches the surface of the wafer that does not need to be protected; wherein, the edge region of the wafer protective film includes: a side region of the wafer protective film, and a part of the main body region connected to the side region.

[0070] By employing the above embodiments, by placing the wafer protective film in a concave state, and with the concave direction of the wafer protective film opposite to the concave direction of the surface of the wafer to be protected, the shape of the edge region of the wafer protective film matches the surface of the wafer not to be protected. This ensures that during the film application process, the wafer protective film can adhere not only to the surface of the wafer to be protected but also to the surface of the wafer not to be protected. This significantly reduces the possibility of the wafer protective film peeling off during the electroless plating process and effectively improves the problem of electroless plating solution penetration.

[0071] As an optional embodiment, refer to Figure 4 The diagram illustrates a step-by-step process for placing a wafer protective film. Step B1 may specifically include the following steps:

[0072] Step B11, providing an adsorption assembly, wherein the adsorption assembly has a groove adapted to accommodate the wafer protective film.

[0073] In some embodiments of this specification, the adsorption component may include a table component that generates suction by releasing a vacuum to adsorb the wafer protective film.

[0074] Using the above embodiments, the Table component generates suction by releasing vacuum to adsorb the wafer protective film, which not only firmly adsorbs the wafer protective film, but also does not cause wear to the wafer protective film.

[0075] It should be noted that the specific implementation of the above-mentioned adsorption components is only an illustrative example, and the embodiments in this specification do not impose specific limitations on the adsorption components.

[0076] Step B12: The wafer protective film is adsorbed by the adsorption component, so that the wafer protective film is accommodated in the groove of the adsorption component in a concave state, and the concave direction of the wafer protective film is opposite to the concave direction of the surface of the wafer that needs to be protected, so that the shape of the edge region of the wafer protective film matches the surface of the wafer that does not need to be protected.

[0077] Using the above embodiments, on the one hand, by adsorbing the wafer protective film through the adsorption component, not only can the wafer protective film be firmly adsorbed, but it will also not cause wear to the wafer protective film; on the other hand, by placing the wafer protective film in a concave state in the groove of the adsorption component, it is easy to adjust the relative position between the wafer protective film and the surface of the wafer that needs to be protected, which can ensure that the shape of the edge area of ​​the wafer protective film matches the surface of the wafer that does not need to be protected, thereby ensuring that during the film application process, the wafer protective film can not only adhere to the surface of the wafer that needs to be protected, but also adhere to the surface of the wafer that does not need to be protected.

[0078] In other embodiments of this specification, step C may specifically include the following steps:

[0079] Place the wafer so that its outer surface is in contact with the edge region of the wafer protective film.

[0080] As an optional embodiment, refer to Figure 5 The diagram illustrates the steps of a film application process. Step D may specifically include the following steps:

[0081] Step D1: Provide a vacuum in the space between the wafer protective film and the surface of the wafer to be protected.

[0082] Step D2: Release the vacuum to allow the wafer protective film to adhere to the surface of the wafer that needs protection and the surface that does not need protection.

[0083] By employing the above embodiments, by providing a vacuum in the space between the wafer protective film and the surface of the wafer to be protected, and then releasing the vacuum, not only can the film application process be achieved, allowing the wafer protective film to adhere to the surface of the wafer to be protected and the surface not to be protected, but also without causing wear to the wafer protective film.

[0084] For ease of implementation, this specification also provides a wafer bonding apparatus, see below. Figure 6 The diagram shows a structural schematic of a wafer bonding apparatus. The wafer bonding apparatus X may include:

[0085] Adsorption component X1 is adapted to accommodate a wafer protective film, such that the shape of the edge region of the wafer protective film matches the unprotected surface of the wafer.

[0086] Vacuum assembly X2 is adapted to provide a vacuum in the space between the wafer protective film and the surface of the wafer to be protected for film application, such that the wafer protective film adheres to the surface of the wafer to be protected and the surface not to be protected.

[0087] By employing the above embodiments, on the one hand, by using the adsorption component to accommodate the wafer protective film, the relative position between the wafer protective film and the wafer can be easily adjusted, thereby ensuring that the shape of the edge region of the wafer protective film matches the unprotected surface of the wafer; on the other hand, by using the vacuum component to provide a vacuum in the space between the wafer protective film and the surface of the wafer that needs protection, not only can the film application process be realized, making the wafer protective film adhere to both the surface of the wafer that needs protection and the unprotected surface, but it also does not cause wear to the wafer protective film. Therefore, by using the above-described film application device, the possibility of wafer protective film detachment during the electroless plating process can be significantly reduced, effectively improving the problem of electroless plating solution penetration.

[0088] In some embodiments of this specification, the adsorption component has a groove adapted to accommodate the wafer protective film.

[0089] Using the above embodiments, since the wafer protective film needs to be attached to the surface of the wafer that needs protection and the surface that does not need protection, a wafer protective film with a size larger than the wafer size can be accommodated by providing a groove on the adsorption component.

[0090] The following specific example illustrates in detail the wafer bonding process using the wafer bonding method and wafer bonding apparatus described in the embodiments of this specification.

[0091] Reference Figures 7a to 7c The diagram shown illustrates the wafer lamination process using the wafer lamination method described in this specification. Figure 7a As shown, the size of the wafer protective film 72 is 2mm larger than that of the wafer 73. The edge region of the wafer protective film 72 includes a side region of the wafer protective film 72 and a main body region connected to the side region. The wafer 73 is formed into a concave shape by the Taiko thinning process. The surface of the wafer 73 that needs to be protected is the concave surface of the wafer, and the surface that does not need to be protected is the outer surface connected to the concave surface. The outer surface includes the upper surface of the sidewall connected to the concave surface and the outer side surface of the sidewall. The table assembly 71 has a groove.

[0092] First, continue to refer to Figure 7a The wafer protective film 72 is adsorbed by the Table component 71, so that the wafer protective film 72 is accommodated in the groove of the Table component 71 in a concave state, and the concave direction of the wafer protective film 72 is opposite to the concave direction of the surface of the wafer 73 that needs to be protected, so that the shape of the edge region of the wafer protective film 72 matches the surface of the wafer 73 that does not need to be protected.

[0093] Furthermore, such as Figure 7b As shown, after the Table component 71 adsorbs the wafer protective film 72, the wafer 73 is placed in a vacuum environment, and the outer surface of the wafer 73 is attached to the edge area of ​​the wafer protective film 72, thereby forming a vacuum V between the wafer protective film 72 and the surface (i.e., the concave surface) of the wafer 73 that needs to be protected.

[0094] Furthermore, such as Figure 7c As shown, during the rapid release of vacuum V, because the wafer protective film 72 and the surface of the wafer 73 to be protected are in a vacuum state, during the rapid release of vacuum V, due to the pressure difference between the internal and external environments, the wafer protective film 72 will be squeezed by the air pressure onto the surface of the wafer 73 to be protected, thereby forming... Figure 7cThe film application status is shown below. (As shown in the image.) Figure 7c As shown, in the wafer bonding state obtained by the wafer bonding method of the embodiment of this specification, the portion of the wafer protective film 72 distributed on the bufferable region H of the protective region P of the wafer 73 is relatively long, extending all the way to the upper surface of the sidewall and the outer surface of the sidewall that communicate with the concave surface of the wafer 73.

[0095] Reference Figure 8 This diagram illustrates the impact of plating solution flow during another wafer plating process, and compares it with a reference diagram. Figure 2 ,like Figure 2 As shown, in the wafer bonding state obtained using the existing wafer bonding method, the portion of the wafer protective film 12 distributed on the bufferable region H of the protective region P of the wafer 13 is too short. During the electroplating process, due to the impact of the electroplating solution flow ( Figure 2 The arrows indicate the flow direction of the plating solution, and the arcs indicate the direction of the plating solution flow. This can easily cause the wafer protective film 12 to peel off from the back side of the wafer 13, allowing the plating solution to penetrate and contaminate the metal on the back side of the wafer 13. However... Figure 8 The wafer bonding state obtained by the wafer bonding method of the embodiment shown in this specification has a relatively long portion of the wafer protective film 72 distributed on the bufferable region H of the protective region P of the wafer 73. During the electroplating process, the impact of the electroplating solution flow ( Figure 8 The arrows indicate the flow direction of the electroplating solution, and the arcs indicate the direction of the electroplating solution. It is difficult to remove the wafer protective film 72 from the back side of the wafer 73, so the possibility of wafer protective film falling off in the electroplating process can be significantly reduced, and the problem of electroplating solution penetration can be effectively improved.

[0096] It is understood that the features described in the various embodiments or claims of this specification can be combined or combined in various ways, even if such combinations or combinations are not explicitly described in this invention. In particular, the features described in the various embodiments or claims of this specification can be combined or combined in various ways without departing from the spirit and guidance of this invention. All such combinations or combinations fall within the scope of this invention.

[0097] While the embodiments disclosed in this specification are as described above, the present invention is not limited thereto. Any person skilled in the art can make various modifications and alterations without departing from the spirit and scope of the invention; therefore, the scope of protection of the present invention should be determined by the scope defined in the claims.

Claims

1. A wafer lamination method, characterized in that, include: A wafer protective film is provided, wherein the size of the wafer protective film is larger than the size of the wafer, the wafer is concave, the surface of the wafer to be protected is the concave surface of the wafer, and the surface not to be protected is the outer surface communicating with the concave surface; wherein the outer surface includes an upper surface of the sidewall communicating with the concave surface and an outer surface of the sidewall. The wafer protective film is placed such that the shape of the edge region of the wafer protective film matches the unprotected surface of the wafer; the placement of the wafer protective film such that the shape of the edge region of the wafer protective film matches the unprotected surface of the wafer includes: placing the wafer protective film in a concave state, and the concave direction of the wafer protective film is opposite to the concave direction of the surface of the wafer that needs protection, so that the shape of the edge region of the wafer protective film matches the unprotected surface of the wafer; The wafer is placed such that the unprotected surface of the wafer is in contact with the edge region of the wafer protective film; A film-coating process is performed to adhere the wafer protective film to the surface of the wafer that needs protection and the surface that does not need protection. The edge region of the wafer protective film includes: a side region of the wafer protective film, and a main body region connected to the side region; The step of placing the wafer protective film in a concave state, with the concave direction of the wafer protective film opposite to the concave direction of the surface of the wafer to be protected, so that the shape of the edge region of the wafer protective film matches the surface of the wafer not to be protected, includes: providing an adsorption component, wherein the adsorption component has a groove adapted to accommodate the wafer protective film; adsorbing the wafer protective film by the adsorption component, so that the wafer protective film is accommodated in the groove of the adsorption component in a concave state, and the concave direction of the wafer protective film opposite to the concave direction of the surface of the wafer to be protected, so that the shape of the edge region of the wafer protective film matches the surface of the wafer not to be protected.

2. The wafer lamination method according to claim 1, characterized in that, The step of placing the wafer such that the unprotected surface of the wafer is in contact with the edge region of the wafer protective film includes: The outer surface of the wafer is attached to the edge region of the wafer protective film.

3. The wafer lamination method according to claim 1, characterized in that, The process of applying the protective film to adhere the wafer protective film to the surface of the wafer that needs protection and the surface that does not need protection includes: A vacuum is provided in the space between the wafer protective film and the surface of the wafer to be protected; Release the vacuum to allow the wafer protective film to adhere to the surface of the wafer that needs protection and the surface that does not need protection.

4. The wafer lamination method according to claim 1, characterized in that, The wafer is formed into the concave shape using a back-side grinding technique.

5. The wafer lamination method according to claim 4, characterized in that, The back-side grinding technology includes the Taiko process.

6. The wafer lamination method according to claim 1, characterized in that, The adsorption component includes a table component, which generates suction by releasing a vacuum to adsorb the wafer protective film.

7. The wafer lamination method according to claim 1, characterized in that, The size difference between the wafer protective film and the wafer is within a preset range.

8. The wafer lamination method according to claim 7, characterized in that, The preset difference range is 1mm to 2mm.

Images