Processing method, processing device, manufacturing system, apparatus, medium, and program

Abstract

The embodiment of the invention provides a processing method, a processing device, a manufacturing system, equipment, a medium and a program, and the processing method comprises the steps: obtaining the configuration information of a plurality of transmission nodes, enabling the plurality of transmission nodes to be configured between the position of a wafer and a target position, and enabling the plurality of transmission nodes to be located when the wafer is located at different transmission nodes; different height differences exist between the wafer and the target position; in response to the acquired processing instruction, controlling the wafer to move according to a transmission path corresponding to the plurality of transmission nodes according to the configuration information so as to change the distance between the wafer and the target position; wherein when the wafer passes through any transmission node in the plurality of transmission nodes, the transmission rate of the wafer reaches the minimum; and when it is monitored that the wafer reaches the target position, a processing control signal corresponding to the processing instruction is generated so as to process the wafer. By adopting the technical scheme, the stability of the wafer in the moving process can be improved, and the processing quality of the wafer is further improved.

Description

Technical Field

[0001] The embodiments of the present disclosure relate to the field of semiconductor manufacturing technology, and more particularly to a processing method, a processing device, a manufacturing system, equipment, a medium, and a program. Background Art

[0002] In the semiconductor manufacturing process, after the wafer is transferred to the process chamber, it is necessary to place the wafer on a work platform of the process chamber to perform corresponding processing (such as vapor deposition) on the wafer.

[0003] Currently, a wafer is placed on a work platform by means of a lifting assembly. During the process of placing the wafer on the work platform, relative movement will occur between the wafer and the lifting assembly, and the position of the wafer on the lifting assembly will shift, causing the position of the wafer on the work platform to shift, thereby reducing the processing quality of the wafer.

[0004] In this context, how to provide a technical solution to improve the stability of the wafer during movement has become a technical problem that technical personnel in this field urgently need to solve. Summary of the invention

[0005] In view of this, the embodiments of the present disclosure provide a processing method, a processing device, a manufacturing system, equipment, a medium and a program, which can improve the stability of the wafer during movement, thereby improving the processing quality of the wafer.

[0006] The present disclosure provides a processing method, including:

[0007] Acquire configuration information of a plurality of transmission nodes, wherein the plurality of transmission nodes are configured between a location of the wafer and a target location, and when the wafer is at different transmission nodes, there are different height differences between the wafer and the target location;

[0008] In response to the acquired processing instruction, according to the configuration information, the wafer is controlled to move along the transmission paths corresponding to the multiple transmission nodes to change the distance between the wafer and the target position; wherein when the wafer passes through any transmission node among the multiple transmission nodes, the transmission rate of the wafer reaches a minimum;

[0009] When it is monitored that the wafer reaches the target position, a processing control signal corresponding to the processing instruction is generated to process the wafer.

[0010] Optionally, in response to the acquired processing instruction, according to the configuration information, controlling the wafer to move along the transmission paths corresponding to the plurality of transmission nodes to change the distance between the wafer and the target position includes:

[0011] In response to the acquired processing instructions, according to the configuration information, the wafer is controlled to move between the multiple transmission nodes along the transmission path until the distance between the wafer and the target position reaches the target distance; wherein, when the wafer moves to a transmission node, it stops for a preset stop time and then continues to move to the next transmission node, and the preset stop time of the wafer at each transmission node is different.

[0012] Optionally, in response to the acquired processing instruction, according to the configuration information, controlling the wafer to move between the plurality of transmission nodes along the transmission path includes:

[0013] In response to the acquired processing instruction, according to the configuration information, control the wafer to move to any one of the plurality of transmission nodes along the transmission path;

[0014] When it is determined that the wafer reaches any one of the plurality of transmission nodes, generating a first control signal for stopping driving the wafer to move;

[0015] When it is determined that the stop time of the wafer reaches the preset stop time corresponding to the transmission node, a second control signal is generated to drive the wafer to move to the next transmission node along the transmission path until the distance between the wafer and the target position is the target distance.

[0016] Optionally, a preset stop time length of the wafer at a transmission node is negatively correlated with a distance between the transmission node and the target location.

[0017] Optionally, the height difference between the location of the wafer and the first transmission node among the multiple transmission nodes, the height difference between any two adjacent transmission nodes among the multiple transmission nodes, and the height difference between the last transmission node among the multiple transmission nodes and the target location are the same.

[0018] Optionally, the processing instructions include: preheating instructions;

[0019] The processing method further comprises:

[0020] In the process of controlling the wafer to move along the transmission path corresponding to the multiple transmission nodes to change the distance between the wafer and the target position, a heating control signal is generated in response to a preheating instruction in the processing instruction, and the heating control signal is used to control the heating of the surface of the wafer close to the target position.

[0021] Optionally, the processing instructions include: a pressurization instruction;

[0022] The processing method further comprises:

[0023] In the process of controlling the wafer to move along the transmission path corresponding to the multiple transmission nodes to change the distance between the wafer and the target position, a pressurization control signal for controlling the pressurization of the chamber where the wafer is located is generated in response to a pressurization instruction in the processing instruction.

[0024] The present disclosure also provides a processing device, including:

[0025] A configuration unit, adapted to configure configuration information of a plurality of transmission nodes, wherein the plurality of transmission nodes are configured between a location of the wafer and a target location, and when the wafer is at different transmission nodes, there are different height differences between the wafer and the target location;

[0026] A processing unit is adapted to respond to the acquired processing instructions and, based on the configuration information, control the wafer to move along the transmission path corresponding to the multiple transmission nodes so as to change the distance between the wafer and the target position; wherein, when the wafer passes through any transmission node among the multiple transmission nodes, the transmission rate of the wafer reaches a minimum; and, when monitoring that the wafer reaches the target position, generate a processing control signal corresponding to the processing instruction so as to process the wafer.

[0027] Optionally, the processing instructions include: preheating instructions;

[0028] The processing unit is further adapted to generate a heating control signal in response to a preheating instruction in the processing instruction;

[0029] The processing device also includes a preheating unit, which is suitable for heating the surface of the wafer close to the target position in response to the heating control signal when the processing unit controls the wafer to move along the transmission path corresponding to the multiple transmission nodes to change the distance between the wafer and the target position.

[0030] Optionally, the processing instructions include: a pressurization instruction;

[0031] The processing unit is further adapted to generate a pressurization control signal in response to a pressurization instruction in the processing instruction;

[0032] The processing device also includes a pressurizing unit, which is suitable for pressurizing the chamber where the wafer is located in response to a pressurizing instruction in the processing instruction when the processing unit controls the wafer to move along the transmission path corresponding to the multiple transmission nodes to change the distance between the wafer and the target position.

[0033] Accordingly, the present disclosure also provides a manufacturing system, including:

[0034] A processing device as described in any one of the preceding embodiments;

[0035] A processing device connected to the processing device for processing wafers.

[0036] An embodiment of the present disclosure also provides a data processing device, including a memory and a processor, wherein the memory is suitable for storing one or more computer instructions, and when the processor runs the computer instructions, it executes the processing method described in any one of the above embodiments.

[0037] The present disclosure also provides a computer-readable storage medium storing computer instructions, which, when executed, execute the processing method described in any one of the aforementioned embodiments.

[0038] The present disclosure also provides a computer program product, including computer instructions, which, when executed by a processor, implement the processing method described in any one of the aforementioned embodiments.

[0039] Using the processing method provided by the embodiment of the present disclosure, a plurality of transmission nodes are configured between the position of the wafer and the target position, and when the wafer is at different transmission nodes, there are different height differences between the wafer and the target position. In response to the acquired processing instructions, the wafer can be controlled to move according to the transmission path corresponding to the plurality of transmission nodes according to the configuration information of the plurality of transmission nodes, thereby changing the distance between the wafer and the target position. In the process of transmitting the wafer, by making the transmission rate of the wafer reach the minimum when the wafer passes through any of the plurality of transmission nodes, a step-by-step transmission method can be adopted to place the wafer at the target position, thereby reducing the problem of wafer offset caused by the air cushion effect, thereby improving the stability of the wafer during movement. When it is monitored that the wafer reaches the target position, a processing control signal for executing the processing procedure can be generated. Since the wafer does not deviate, the processing quality of the wafer can be improved. BRIEF DESCRIPTION OF THE DRAWINGS

[0040] In order to more clearly illustrate the technical solutions of the embodiments of the present disclosure, the drawings required for use in the embodiments of the present disclosure or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present disclosure. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0041] Figure 1 A flow chart of a processing method according to an embodiment of the present disclosure is shown;

[0042] Figures 2 to 4 A schematic diagram showing a principle of a wafer transfer process in an embodiment of the present disclosure is shown;

[0043] Figure 5 A schematic structural diagram of a processing device in an embodiment of the present disclosure is shown. DETAILED DESCRIPTION

[0044] As described in the background art, when a wafer is placed on a work platform, the position of the wafer on the work platform will shift. This is because:

[0045] When the lifting assembly receives the wafer, it uses a single descent process to place the wafer directly on the work platform. There is gas at the contact point between the lifting assembly and the wafer. When the lifting assembly drives the wafer down, an air cushion effect (i.e., the upward force exerted on an object when it is suspended or moving above a low-pressure gas layer) will be generated between the wafer and the lifting assembly, causing the position of the wafer on the lifting assembly to shift. When the wafer is placed on the work platform, the position of the wafer on the work platform will also shift. In this way, during the deposition process, the thickness of the dielectric layer deposited at different positions on the wafer surface is different.

[0046] In order to solve the above technical problems, the embodiments of the present disclosure provide a processing method, by configuring multiple transmission nodes between the position of the wafer and the target position, and making the wafer move according to the transmission paths corresponding to the multiple transmission nodes, in the process of changing the distance between the wafer and the target position, when the wafer passes through any of the multiple transmission nodes, the transmission rate of the wafer reaches the minimum. That is, a step-by-step transmission method can be adopted to place the wafer at the target position, thereby reducing the problem of wafer offset caused by the air cushion effect, thereby improving the stability of the wafer during movement. When it is monitored that the wafer reaches the target position, a processing control signal for executing the processing procedure can be generated. Since the wafer does not deviate, the processing quality of the wafer can be improved.

[0047] In order to enable those skilled in the art to better understand the inventive concept, working principle and advantages of the embodiments of the present disclosure, the processing scheme in the embodiments of the present disclosure is described in detail below.

[0048] See also Figures 1 to 4 ,in, Figure 1 is a flow chart of a processing method in an embodiment of the present disclosure, Figures 2 to 4 It is a schematic diagram of the principle of a wafer transfer process in an embodiment of the present disclosure.

[0049] In some embodiments of the present disclosure, see Figures 1 to 4 , the wafer can be transferred to the target location according to the following steps:

[0050] S11, obtaining configuration information of multiple transmission nodes.

[0051] Specifically, when executing different processes, the transmission paths and transmission distances corresponding to the wafer are different. Therefore, multiple transmission nodes corresponding to the current process can be configured according to the current process executed by the wafer.

[0052] In some examples, the configuration information may include information such as the number of transmission nodes, the distance between adjacent transmission nodes, the path between adjacent transmission nodes, and the location of each transmission node.

[0053] In some examples, multiple transmission nodes and configuration information of the multiple transmission nodes may be configured according to the distance and path over which the wafer is to be transmitted.

[0054] In some optional examples, multiple transmission nodes and configuration information of the multiple transmission nodes may be configured by at least one of manual configuration or machine configuration.

[0055] In some examples, to improve the accuracy and continuity of the transmission steps performed, such as Figures 2 to 4 As shown, the characteristics of multiple transmission nodes can be further configured.

[0056] For example, multiple transport nodes ( Figures 2 to 4 (not shown) can be configured between position A where the wafer 10 is located and the target position B, so that the wafer 10 can be correctly transferred to the target position B.

[0057] In some embodiments of the present disclosure, the target position B may refer to the position where the plane of the working platform 30 (eg, heater) is located.

[0058] In some examples, location A where wafer 10 is located can serve as the first transmission node, and target location B can serve as the last transmission node.

[0059] For another example, when the wafer 10 is at different transmission nodes, there are different height differences between the wafer 10 and the target position B; as the wafer 10 moves between multiple transmission nodes, the wafer 10 gets closer and closer to the target position B.

[0060] For example, Figure 2 As shown, when the lifting assembly 20 receives the wafer 10, the height difference between the wafer 10 and the target position B is h1; Figure 3 As shown in FIG. 1 , when the wafer 10 is located between the initial position and the first transmission node, other transmission nodes or adjacent transmission nodes, and between the last transmission node and the target position, the height difference between the wafer 10 and the target position B becomes smaller, for example, the height difference is h2; when the wafer 10 is located at other positions again, the height difference between the wafer 10 and the target position B will become smaller again until as shown in FIG. Figure 4 As shown, the height difference between the wafer 10 and the target position B is zero.

[0061] Through the above configuration method, on the one hand, the position interval of the wafer can be located according to the transmission node where the wafer is located; on the other hand, by configuring the configuration information of multiple transmission nodes, the wafer can be transmitted according to the set transmission path matching the multiple transmission nodes.

[0062] S12, in response to the acquired processing instruction, according to the configuration information, controlling the wafer to move along the transmission paths corresponding to the multiple transmission nodes to change the distance between the wafer and the target position.

[0063] Specifically, when it is necessary to execute a wafer processing procedure, according to the processing instructions obtained, the wafer can be driven in sequence according to the transmission paths corresponding to the multiple transmission nodes according to the configuration information, so that the wafer can be placed at the target position.

[0064] As an example, when the lifting assembly 20 receives the wafer 10, in response to processing instructions and configuration information, it can drive the wafer 10 to move along the transmission paths corresponding to multiple transmission nodes, thereby reducing the distance between the wafer 10 and the target position B.

[0065] For example, Figure 3 As shown, the initial height difference between the wafer 10 and the target position B is h1; when the lifting assembly 20 drives the wafer 10 to move along the through hole opened on the working platform 30 and passes through each transmission node, as shown in FIG. Figure 3 As shown, the height difference between the wafer 10 and the target position B becomes smaller, for example, the height difference is h2, that is, the distance between the wafer 10 and the target position B becomes smaller; when the wafer is transmitted along each transmission node again, the distance between the wafer 10 and the target position B becomes gradually smaller until as shown in FIG. Figure 4 As shown, the height difference between the wafer 10 and the target position B is 0, that is, the wafer 10 is placed at the target position B, and the distance between the two is 0.

[0066] It is understandable that in some other examples, the lifting assembly 20 and the working platform 30 may be moved together at the same time to reduce the transmission time.

[0067] In some examples, when the wafer passes through any of the multiple transmission nodes, the transmission rate of the wafer reaches a minimum. In a further optional implementation, when the wafer reaches any transmission node, the wafer can stop moving for a certain period of time and then continue to move to the next transmission node until the wafer reaches the target position.

[0068] S13, when it is monitored that the wafer reaches the target position, generating a processing control signal corresponding to the processing instruction to process the wafer.

[0069] Specifically, by using steps S11 and S12, processing instructions can be output, and according to the configuration information, the wafer can be driven to move along the transmission paths corresponding to multiple transmission nodes. The transmission process of the wafer takes a certain amount of time, so the position of the wafer can be monitored. When it is determined that the wafer has reached the target position, a processing control signal corresponding to the processing instruction is generated, thereby performing processing (such as vapor deposition processing) on ​​the wafer.

[0070] By adopting the processing method provided in the above embodiment, the wafer is placed at the target position by adopting a step-by-step transmission method, which can reduce the wafer deviation problem caused by the air cushion effect, thereby improving the stability of the wafer during movement. When monitoring that the wafer reaches the target position, a processing control signal for executing the processing procedure can be generated. Since the wafer does not deviate, the processing quality of the wafer can be improved.

[0071] In order to enable those skilled in the art to better understand and implement the embodiments of the present disclosure, the concepts, schemes, principles and advantages of the embodiments of the present disclosure are described in detail below with reference to the accompanying drawings and through specific application examples.

[0072] During the actual transmission process, the inventors further discovered that the reason why the wafer shifted was that there was a lot of gas between the wafer and the lifting assembly. During the continuous movement of the wafer, the gas was not easy to escape, and the air cushion effect between the wafer and the lifting assembly always existed, which led to a large shift between the wafer and the lifting assembly.

[0073] In this case, in order to reduce the impact of the air cushion effect on the wafer, the distance between the wafer and the target position can be changed in the following ways:

[0074] In response to the acquired processing instructions, according to the configuration information, the wafer is controlled to move between multiple transmission nodes along the transmission path until the distance between the wafer and the target position is the target distance; wherein, when the wafer moves to a transmission node, it stops for a preset stop time and then continues to move to the next transmission node.

[0075] That is, when the wafer is controlled to move along the transmission path corresponding to multiple transmission nodes, the distance between the wafer and the target position becomes smaller and smaller, and the wafer approaches the target position. In the process of transmitting the wafer, when the wafer moves to any one of the transmission nodes, the wafer stops moving (that is, the transmission rate is zero), thereby reducing the air cushion effect between the wafer and the lifting assembly.

[0076] When the wafer stops at one of the transmission nodes for a preset stop time, the wafer is driven to move along the transmission path again until the wafer is transmitted to the target position.

[0077] In some examples, the preset stop time of the wafer at each transmission node is different.

[0078] In the disclosed embodiment, the closer to the target position (eg, the position of the heater), the better the preheating effect of the wafer, and the air cushion effect between the wafer and the lifting assembly still exists.

[0079] Based on this, in some examples, the preset stop time of the wafer corresponding to a transmission node is negatively correlated with the distance between the transmission node and the target position. That is, the closer the distance between the wafer and the target position, the longer the preset stop time of the wafer on the transmission node. In this way, by increasing the preheating time of the wafer, the processing quality is improved; and by increasing the preset stop time of the wafer on the transmission node, more gas can be discharged, thereby further reducing the air cushion effect between the wafer and the lifting assembly, so as to improve the stability of the wafer during transmission. As an optional example, if there are 6 transmission nodes n1 to n6 in the example disclosed in the present invention, the distance between any of the 6 transmission nodes n1 to n6 and the target position is different, and the distance between the 6 transmission nodes and the target position decreases; accordingly, the preset stop time of the 6 transmission nodes can increase. For example, when the wafer reaches the transmission node n1, the preset stop time can be 3s; when the wafer reaches the transmission node n2, the preset stop time can be 4s; when the wafer reaches the transmission node n3, the preset stop time can be 5s; when the wafer reaches the transmission node n4, the preset stop time can be 6s; when the wafer reaches the transmission node n5, the preset stop time can be 7s; when the wafer reaches the transmission node n6, the preset stop time can be 8s.

[0080] In a specific example of the present disclosure, the transmission process of the wafer can be controlled by determining whether the wafer reaches the transmission node and when the preset stop occurs on the transmission node.

[0081] Specifically, in response to the acquired processing instructions, according to the configuration information, the wafer is controlled to move to any one of the multiple transmission nodes; when it is determined that the wafer reaches any one of the multiple transmission nodes, a first control signal is generated to stop driving the wafer to move; when it is determined that the stop time of the wafer reaches the preset stop time corresponding to the transmission node, a second control signal is generated to drive the wafer to move to the next transmission node along the transmission path until the distance between the wafer and the target position is the target distance.

[0082] In short, when the wafer is transported along the transmission path, when it is determined that the wafer has reached the transmission node, the wafer is driven to move. When the wafer stops at the transmission node for a preset time, the wafer is driven to move again until the wafer is transported to the target position.

[0083] In some embodiments of the present disclosure, when the wafer is driven to move along the transmission path, the movement distance of the wafer is the same within the selected movement range.

[0084] In some examples, the movement interval may include: an interval between an initial position of the wafer and a first transmission node, an interval between any two adjacent transmission nodes, and an interval between a last transmission node and a target position.

[0085] That is, the height difference between the location of the wafer and the first transmission node among the multiple transmission nodes, the height difference between any two adjacent transmission nodes among the multiple transmission nodes, and the height difference between the last transmission node among the multiple transmission nodes and the target position are the same. By making the height differences between the above three the same, it is possible to determine whether the wafer is on the transmission node by the distance the wafer moves, and the judgment method is simple.

[0086] In some examples, the movement distance of any movement interval can be 50 mil (1 mil is 2.54e -5 m).

[0087] It is understandable that when the wafer is driven to move along the transmission path, within the selected movement interval, the movement distance of the wafer may be different or there may be movement intervals with different movement distances.

[0088] In some embodiments of the present disclosure, when a wafer is transmitted along a transmission path, the position of the wafer can be monitored, and different control logics can be executed on the wafer based on the monitoring result.

[0089] For example, when it is determined that the wafer has not reached the target position, the wafer transfer process is continued.

[0090] For example, when it is determined that the wafer reaches the target position, a process control signal for executing a process step is generated to process the wafer.

[0091] In some processing steps, when the wafer is placed on the work platform, it is usually necessary to preheat the wafer to improve the processing quality. For example, in the deposition process, by preheating the wafer, the adhesion of the deposited film can be improved and defects can be reduced.

[0092] In some embodiments of the present disclosure, the processing instructions may include: preheating instructions. Accordingly, in the process of controlling the wafer to move along the transmission paths corresponding to the plurality of transmission nodes to change the distance between the wafer and the target position, a heating control signal is generated in response to the preheating instruction in the processing instructions, and the heating control signal is used to control the heating of the surface of the wafer close to the target position.

[0093] By heating the surface of the wafer close to the target position, the temperature difference between the wafer and the working platform can be reduced, thus avoiding wafer fragmentation due to a large temperature difference and improving the processing quality.

[0094] In some embodiments of the present disclosure, the processing instruction may include a pressurization instruction. Accordingly, in the process of controlling the wafer to move along the transmission paths corresponding to the plurality of transmission nodes to change the distance between the wafer and the target position, a pressurization control signal for controlling the pressurization of the chamber where the wafer is located is generated in response to the pressurization instruction in the processing instruction.

[0095] By pressurizing the chamber where the wafer is located, the density of the gas in the chamber can be improved, thereby enhancing the thermal conductivity of the gas and improving the preheating effect of the wafer.

[0096] It can be understood that the above describes multiple embodiment schemes provided by the embodiments of the present disclosure, and the various optional methods introduced in each embodiment scheme can be combined and cross-referenced with each other without conflict, thereby extending a variety of possible embodiment schemes, which can all be considered as embodiment schemes disclosed and disclosed by the present disclosure.

[0097] The present disclosure also provides a processing device corresponding to the processing method described in any of the above embodiments, which is introduced below through specific examples. It should be noted that the content of the processing device described below can be referenced to the content of the processing method described above.

[0098] Reference Figure 5 The structural diagram of a processing device in an embodiment of the present disclosure is shown in FIG. Figure 5 As shown, the processing device 100 may include:

[0099] The configuration unit 110 is adapted to configure configuration information of a plurality of transmission nodes, wherein the plurality of transmission nodes are configured between a location of the wafer and a target location, and when the wafer is at different transmission nodes, there are different height differences between the wafer and the target location;

[0100] The processing unit 120, in response to the acquired processing instruction, controls the wafer to move along the transmission path corresponding to the multiple transmission nodes according to the configuration information, so as to change the distance between the wafer and the target position; wherein, when the wafer passes through any transmission node among the multiple transmission nodes, the transmission rate of the wafer reaches the minimum; and, when monitoring that the wafer reaches the target position, generates a processing control signal corresponding to the processing instruction to process the wafer.

[0101] By using the above-mentioned processing device 100, multiple transmission nodes are configured between the location of the wafer and the target location through the configuration unit 110, and the processing unit 120 can make the wafer move according to the transmission path corresponding to the multiple transmission nodes, and in the process of changing the distance between the wafer and the target location, when the wafer passes through any of the multiple transmission nodes, the transmission rate of the wafer reaches the minimum. That is, a step-by-step transmission method can be adopted to place the wafer at the target location, thereby reducing the problem of wafer offset caused by the air cushion effect, thereby improving the stability of the wafer during movement. When it is monitored that the wafer reaches the target position, a processing control signal for executing the processing procedure can be generated. Since the wafer does not deviate, the processing quality of the wafer can be improved.

[0102] In some embodiments of the present disclosure, when different processes are executed, the transmission paths and transmission distances corresponding to the wafers are different. Therefore, multiple transmission nodes corresponding to the current process can be configured according to the current process executed by the wafer.

[0103] In some examples, the configuration unit may configure multiple transmission nodes and configuration information of the multiple transmission nodes according to the distance and path that the wafer needs to be transmitted.

[0104] In some examples, the configuration information may include information such as the number of transmission nodes, the distance between adjacent transmission nodes, the path between adjacent transmission nodes, and the location of each transmission node.

[0105] In some examples, to improve the accuracy and continuity of the transmission steps performed, such as Figures 2 to 4 As shown, the characteristics of multiple transmission nodes can be further configured.

[0106] For example, through the configuration unit, multiple transmission nodes can be configured between the position A where the wafer 10 is located and the target position B, so that the wafer 10 can be correctly transmitted to the target position B.

[0107] For another example, by configuring the unit, the location A where the wafer 10 is located can be used as the first transmission node, and the target location B can be used as the last transmission node.

[0108] For another example, by configuring the unit, when the wafer 10 is at different transmission nodes, there can be different height differences between the wafer 10 and the target position B, that is, the wafer 10 is getting closer and closer to the target position B.

[0109] Through the above configuration method, on the one hand, the position interval of the wafer can be located according to the transmission node where the wafer is located; on the other hand, by configuring the configuration information of multiple transmission nodes, the wafer can be transmitted according to the set transmission path matching the multiple transmission nodes.

[0110] In some examples of the present disclosure, when a wafer processing procedure needs to be executed, the processing unit can drive the wafer to move along the transmission paths corresponding to multiple transmission nodes in sequence according to the acquired processing instructions and configuration information, so that the wafer can be placed at the target position.

[0111] For example, combined with Figures 2 to 5 When the lifting assembly 20 receives the wafer 10, it can drive the wafer 10 to move along the transmission paths corresponding to the multiple transmission nodes in response to the processing instructions and configuration information, thereby reducing the distance between the wafer 10 and the target position B.

[0112] As an example, Figure 3 As shown, the initial height difference between the wafer 10 and the target position B is h1; when the lifting assembly 20 drives the wafer 10 to move along the through hole opened on the working platform 30 and passes through each transmission node, as shown in FIG. Figure 3 As shown, the height difference between the wafer 10 and the target position B becomes smaller, for example, the height difference is h2, that is, the distance between the wafer 10 and the target position B becomes smaller; when the wafer is transmitted along each transmission node again, the distance between the wafer 10 and the target position B becomes gradually smaller until as shown in FIG. Figure 4 As shown, the height difference between the wafer 10 and the target position B is 0, that is, the wafer 10 is placed at the target position B, and the distance between the two is 0.

[0113] In some examples, the processing unit may include a processor, and Figures 2 to 4 The work platform shown is capable of processing wafers and the lifting device for lifting the wafers.

[0114] In some examples, when the wafer passes through any of the multiple transmission nodes, the transmission rate of the wafer reaches a minimum. In a further optional implementation, when the wafer reaches any transmission node, the wafer can stop moving for a certain period of time and then continue to move to the next transmission node until the wafer reaches the target position.

[0115] In some embodiments of the present disclosure, when driving the wafer to move along the transmission paths corresponding to multiple transmission nodes, the transmission process of the wafer requires a certain amount of time. Therefore, the processing unit can monitor the position of the wafer, and when it is determined that the wafer has reached the target position, it generates a processing control signal corresponding to the processing instruction, thereby performing processing (such as vapor deposition processing) on ​​the wafer.

[0116] During the actual transmission process, the inventors further discovered that the reason why the wafer shifted was that there was a lot of gas between the wafer and the lifting assembly. During the continuous movement of the wafer, the gas was not easy to escape, and the air cushion effect between the wafer and the lifting assembly always existed, which led to a large shift between the wafer and the lifting assembly.

[0117] In this case, in order to reduce the impact of the air cushion effect on the wafer, the processing unit can change the distance between the wafer and the target position in the following manner:

[0118] In response to the acquired processing instructions, according to the configuration information, the wafer is controlled to move between multiple transmission nodes along the transmission path until the distance between the wafer and the target position is the target distance; wherein, when the wafer moves to a transmission node, it stops for a preset stop time and then continues to move to the next transmission node.

[0119] That is, when controlling the wafer to move along the transmission path corresponding to multiple transmission nodes, the distance between the wafer and the target position becomes smaller and smaller, and the wafer approaches the target position. In the process of transmitting the wafer, when the wafer moves to any one of the transmission nodes, the processing unit can output a control signal to stop the transmission of the wafer (that is, the transmission rate is zero), thereby reducing the air cushion effect between the wafer and the lifting assembly.

[0120] When the wafer stops at one of the transmission nodes for a preset stop time, the processing unit drives the wafer to move along the transmission path again until the wafer is transmitted to the target position.

[0121] In some examples, the preset stop time of the wafer at each transmission node is different.

[0122] In the disclosed embodiment, the closer to the target position (eg, the position of the heater), the better the preheating effect of the wafer, and the air cushion effect between the wafer and the lifting assembly still exists.

[0123] Based on this, in some examples, the preset stop time of the wafer at a transmission node is negatively correlated with the distance between the transmission node and the target position. That is, the closer the distance between the wafer and the target position, the longer the preset stop time of the wafer at the transmission node. In this way, by increasing the preheating time of the wafer, the processing quality is improved; and by increasing the preset stop time of the wafer at the transmission node, more gas can be discharged, thereby further reducing the air cushion effect between the wafer and the lifting assembly, so as to improve the stability of the wafer during the transmission process.

[0124] In a specific example of the present disclosure, the transmission process of the wafer can be controlled by determining whether the wafer reaches the transmission node and when the preset stop occurs on the transmission node.

[0125] Specifically, in response to the acquired processing instructions, the processing unit can control the wafer to move to any one of the multiple transmission nodes according to the configuration information; when the processing unit determines that the wafer reaches any one of the multiple transmission nodes, the processing unit generates a first control signal for stopping driving the wafer to move; when the processing unit determines that the stop time of the wafer reaches the preset stop time corresponding to the transmission node, the processing unit generates a second control signal for driving the wafer to move to the next transmission node along the transmission path until the distance between the wafer and the target position is the target distance.

[0126] In short, when the wafer is transmitted along the transmission path, the processing unit stops driving the wafer to move when it determines that the wafer has reached the transmission node. When the wafer stops at the transmission node for a preset time, the processing unit drives the wafer to move again until the wafer is transmitted to the target position.

[0127] In some embodiments of the present disclosure, when the wafer is driven to move along the transmission path, the movement distance of the wafer is the same within the selected movement range.

[0128] In some examples, the movement interval may include: an interval between an initial position of the wafer and a first transmission node, an interval between any two adjacent transmission nodes, and an interval between a last transmission node and a target position.

[0129] That is, the height difference between the location of the wafer and the first transmission node among the multiple transmission nodes, the height difference between any two adjacent transmission nodes among the multiple transmission nodes, and the height difference between the last transmission node among the multiple transmission nodes and the target position are the same. By making the height differences between the above three the same, it is possible to determine whether the wafer is on the transmission node by the distance the wafer moves, and the implementation method is simple.

[0130] It is understandable that when the wafer is driven to move along the transmission path, within the selected movement interval, the movement distance of the wafer may be different or there may be movement intervals with different movement distances.

[0131] In some embodiments of the present disclosure, when a wafer is transmitted along a transmission path, a processing unit may monitor the position of the wafer and execute different control logics on the wafer according to the monitoring result.

[0132] For example, when it is determined that the wafer has not reached the target position, the wafer transfer process is continued.

[0133] For example, when it is determined that the wafer reaches the target position, a process control signal for executing a process step is generated to process the wafer.

[0134] In some processing steps, when the wafer is placed on the work platform, it is usually necessary to preheat the wafer to improve the processing quality. For example, in the deposition process, by preheating the wafer, the adhesion of the deposited film can be improved and defects can be reduced.

[0135] In some embodiments of the present disclosure, the processing instruction may include: a preheating instruction, and the processing unit is further adapted to generate a heating control signal in response to the preheating instruction in the processing instruction.

[0136] Accordingly, the preheating unit is suitable for heating the surface of the wafer close to the target position in response to the heating control signal when the processing unit controls the wafer to move along the transmission path corresponding to multiple transmission nodes to change the distance between the wafer and the target position.

[0137] By heating the surface of the wafer close to the target position, the temperature difference between the wafer and the working platform can be reduced, thus avoiding wafer fragmentation due to a large temperature difference and improving the processing quality.

[0138] In some embodiments of the present disclosure, the processing instruction may include a pressurization instruction, and the processing unit is further adapted to generate a pressurization control signal in response to the pressurization instruction in the processing instruction.

[0139] Correspondingly, the processing device also includes a pressurizing unit, which is suitable for pressurizing the chamber where the wafer is located in response to the pressurizing instruction in the processing instruction when the processing unit controls the wafer to move along the transmission path corresponding to multiple transmission nodes to change the distance between the wafer and the target position.

[0140] By pressurizing the chamber where the wafer is located, the density of the gas in the chamber can be improved, thereby enhancing the thermal conductivity of the gas and improving the preheating effect of the wafer.

[0141] In some examples, the processing device described above may be applied to a wafer manufacturing system, and the manufacturing system may control the processing process of the wafer.

[0142] The embodiments of the present disclosure also provide a manufacturing system. In some examples, the manufacturing system may include a processing device according to any of the aforementioned embodiments, and processing equipment for processing wafers connected to the processing device.

[0143] The structure and working principle of the processing device can be found in the above examples and will not be elaborated here.

[0144] The present disclosure also provides a data processing device, which may include a memory and a processor. The memory and the processor may communicate with each other via a communication bus. The memory stores computer instructions that can be run on the processor. When the processor runs the computer instructions, it may execute the processing method described in any of the above embodiments. For details, please refer to the above-mentioned related content and will not be repeated here.

[0145] In a specific implementation, the processor may include a central processing unit, a field programmable gate array, etc.

[0146] The memory may include a random access memory (RAM), a read-only memory (ROM), a non-volatile memory (NVM), etc.

[0147] In a specific implementation, the computer instructions may include any suitable type of code implemented using any suitable high-level, low-level, object-oriented, visual, compiled and / or interpreted programming language, such as source code, compiled code, interpreted code, executable code, static code, dynamic code, encrypted code, etc.

[0148] In some examples, the data processing device may further include a display interface and a display connected through the display interface. The display interface may communicate with the memory and the processor through a communication bus. The display may display the result obtained by the processor executing the processing method provided by the embodiment of the present disclosure, such as the position of the wafer on the transmission path.

[0149] In some examples, the data processing device may further include a data output interface, which may communicate with the memory and the processor via a communication bus to output various data during the wafer processing process.

[0150] The present disclosure further provides a computer-readable storage medium on which computer instructions are stored. When the computer instructions are executed, the processing method described in any of the above embodiments of the present disclosure can be executed. For details, please refer to the above-mentioned related content and will not be repeated here.

[0151] The computer-readable storage medium may include any suitable type of memory unit, memory device, memory article, memory medium, storage device, storage article, storage medium and / or storage unit, such as memory, removable or non-removable medium, erasable or non-erasable medium, writable or rewritable medium, digital or analog medium, hard disk, floppy disk, compact disk read-only memory (CDROM), compact disk recordable (CD-R), compact disk rewritable (CD-RW), optical disk, magnetic medium, magneto-optical medium, removable memory card or disk, various types of digital versatile disks (DVD), magnetic tape, cassette, etc.

[0152] Furthermore, the computer instructions may include any suitable type of code implemented using any suitable high-level, low-level, object-oriented, visual, compiled and / or interpreted programming language, such as source code, compiled code, interpreted code, executable code, static code, dynamic code, encrypted code, etc.

[0153] The present invention also provides a computer program product, which may include computer instructions. When the computer instructions are executed by a processor, the processing method described in any of the above embodiments of the present invention is implemented. For details, please refer to the above-mentioned related content and will not be repeated here.

[0154] Although the disclosure is as above, the present invention is not limited thereto. Any person skilled in the art can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the scope defined by the claims.

Claims

1. A processing method, characterized in that: include: Acquire configuration information of a plurality of transmission nodes, wherein the plurality of transmission nodes are configured between a location of the wafer and a target location, and when the wafer is at different transmission nodes, there are different height differences between the wafer and the target location; In response to the acquired processing instruction, according to the configuration information, the wafer is controlled to move along the transmission paths corresponding to the multiple transmission nodes to change the distance between the wafer and the target position; wherein when the wafer passes through any transmission node among the multiple transmission nodes, the transmission rate of the wafer reaches a minimum; When it is monitored that the wafer reaches the target position, a processing control signal corresponding to the processing instruction is generated to process the wafer.

2. The processing method according to claim 1, characterized in that: In response to the acquired processing instruction, according to the configuration information, controlling the wafer to move along the transmission paths corresponding to the plurality of transmission nodes to change the distance between the wafer and the target position includes: In response to the acquired processing instructions, according to the configuration information, the wafer is controlled to move between the multiple transmission nodes along the transmission path until the distance between the wafer and the target position reaches the target distance; wherein, when the wafer moves to a transmission node, it stops for a preset stop time and then continues to move to the next transmission node, and the preset stop time of the wafer at each transmission node is different.

3. The processing method according to claim 2, characterized in that: The step of controlling the wafer to move between the plurality of transmission nodes along the transmission path in response to the acquired processing instruction and according to the configuration information includes: In response to the acquired processing instruction, according to the configuration information, control the wafer to move to any one of the plurality of transmission nodes along the transmission path; When it is determined that the wafer reaches any one of the plurality of transmission nodes, generating a first control signal for stopping driving the wafer to move; When it is determined that the stop time of the wafer reaches the preset stop time corresponding to the transmission node, a second control signal is generated to drive the wafer to move to the next transmission node along the transmission path until the distance between the wafer and the target position is the target distance.

4. The processing method according to claim 2, characterized in that: The preset stop time of the wafer corresponding to a transmission node is negatively correlated with the distance between the transmission node and the target position.

5. The processing method according to any one of claims 1 to 4, characterized in that: The height difference between the wafer location and the first transmission node among the multiple transmission nodes, the height difference between any two adjacent transmission nodes among the multiple transmission nodes, and the height difference between the last transmission node among the multiple transmission nodes and the target location are the same.

6. The processing method according to claim 1, characterized in that: The processing instructions include: preheating instructions; The processing method further comprises: In the process of controlling the wafer to move along the transmission path corresponding to the multiple transmission nodes to change the distance between the wafer and the target position, a heating control signal is generated in response to a preheating instruction in the processing instruction, and the heating control signal is used to control the heating of the surface of the wafer close to the target position.

7. The processing method according to claim 1, characterized in that: The processing instructions include: pressurization instructions; The processing method further comprises: In the process of controlling the wafer to move along the transmission path corresponding to the multiple transmission nodes to change the distance between the wafer and the target position, a pressurization control signal for controlling the pressurization of the chamber where the wafer is located is generated in response to a pressurization instruction in the processing instruction.

8. A processing device, characterized in that: include: A configuration unit, adapted to configure configuration information of a plurality of transmission nodes, wherein the plurality of transmission nodes are configured between a location of the wafer and a target location, and when the wafer is at different transmission nodes, there are different height differences between the wafer and the target location; A processing unit is adapted to respond to the acquired processing instructions and, based on the configuration information, control the wafer to move along the transmission path corresponding to the multiple transmission nodes so as to change the distance between the wafer and the target position; wherein, when the wafer passes through any transmission node among the multiple transmission nodes, the transmission rate of the wafer reaches a minimum; and, when monitoring that the wafer reaches the target position, generate a processing control signal corresponding to the processing instruction so as to process the wafer.

9. The processing device according to claim 8, characterized in that: The processing instructions include: preheating instructions; The processing unit is further adapted to generate a heating control signal in response to a preheating instruction in the processing instruction; The processing device also includes a preheating unit, which is suitable for heating the surface of the wafer close to the target position in response to the heating control signal when the processing unit controls the wafer to move along the transmission path corresponding to the multiple transmission nodes to change the distance between the wafer and the target position.

10. The processing device according to claim 8, characterized in that: The processing instructions include: pressurization instructions; The processing unit is further adapted to generate a pressurization control signal in response to a pressurization instruction in the processing instruction; The processing device also includes a pressurizing unit, which is suitable for pressurizing the chamber where the wafer is located in response to a pressurizing instruction in the processing instruction when the processing unit controls the wafer to move along the transmission path corresponding to the multiple transmission nodes to change the distance between the wafer and the target position.

11. A manufacturing system, characterized in that: include: The processing device according to any one of claims 8 to 10; A processing device connected to the processing device for processing wafers.

12. A data processing device, characterized in that: It comprises a memory and a processor, wherein the memory is suitable for storing one or more computer instructions, and when the processor runs the computer instructions, it executes the processing method according to any one of claims 1 to 7.

13. A computer-readable storage medium, characterized in that: Computer instructions are stored, and when the computer instructions are executed, the processing method according to any one of claims 1 to 7 is executed.

14. A computer program product, characterized in that The method comprises computer instructions, which, when executed by a processor, implement the processing method according to any one of claims 1 to 7.

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