Photovoltaic module

Abstract

The embodiment of the invention relates to the photovoltaic field, and provides a photovoltaic module, which comprises a back contact solar cell, and the back contact solar cell comprises a first collection region and a second collection region which are alternately arranged along a first direction; the first auxiliary grid lines and the second auxiliary grid lines are alternately arranged in the second direction; the first identification point is located on the first auxiliary grid line, and the distance between the first identification point and the second collection area is a first distance; the first identification points and the second identification points are mutually staggered; the insulating layer is positioned at the end part, facing the second collecting region, of the first auxiliary grid line; wherein the insulating layer on the first auxiliary grid line with the first identification point is a first insulating layer, the first insulating layer is disconnected at the first identification point, the distance between the first identification point and the end part of the first insulating layer is a second distance, and the ratio range of the first distance to the second distance is 2-30. According to the photovoltaic module provided by the embodiment of the invention, the yield can be improved.

Description

Technical Field

[0001] The embodiments of the present application relate to the photovoltaic field, and in particular to a photovoltaic module. Background Art

[0002] In the current crystalline silicon solar cell process, most steps are operated by machines. Therefore, a mark point is required for positioning, and a series of operations are performed based on this mark point, such as electrode printing, insulating glue printing, and solder paste printing.

[0003] In other words, one of the factors affecting the final yield and aesthetics of photovoltaic modules is the positioning accuracy of the mark point. Based on this, the mark point must have clear contours and obvious color difference to facilitate camera capture, and then the positioning point can be used for electrode printing, insulation glue printing, solder paste printing, etc. Summary of the invention

[0004] The embodiments of the present application provide a photovoltaic module, which is at least beneficial to improving the yield rate of the photovoltaic module.

[0005] According to some embodiments of the present application, the embodiments of the present application provide a photovoltaic component, including: a back-contact solar cell, the back-contact solar cell including: a first collection area and a second collection area alternately arranged along a first direction; a first auxiliary grid line and a second auxiliary grid line alternately arranged along a second direction, the first auxiliary grid line is located in the first collection area and is disconnected at the second collection area, and the second auxiliary grid line is located in the second collection area and is disconnected in the first collection area; a first identification point and a second identification point, the first identification point is located on the first auxiliary grid line, and the distance between the first identification point and the second collection area is a first distance; the first identification point and the second identification point are staggered with each other; wherein the first identification point is used to locate the first auxiliary grid line, and the second identification point is used to locate the second auxiliary grid line; an insulating layer, the insulating layer is located at the end of the first auxiliary grid line facing the second collection area; wherein the insulating layer on the first auxiliary grid line having the first identification point is a first insulating layer, the first insulating layer is disconnected at the first identification point, the distance between the first identification point and the end of the first insulating layer is a second distance, and the ratio of the first distance to the second distance ranges from 2 to 30.

[0006] In some embodiments, the second distance ranges from 0.1 mm to 0.3 mm.

[0007] In some embodiments, the first identification point near the second collection area is used as a first type of identification point, and the first identification point near the first collection area is used as a second type of identification point, and the distance between the first type of identification point and the end of the first insulating layer is a second distance; the insulating layer is also located at the end of the second secondary gate line facing the first collection area, and the insulating layer on the second secondary gate line adjacent to the second type of identification point is a second insulating layer, and the second insulating layer is disconnected adjacent to the second type of identification point, and the distance between the second type of identification point and the end of the second insulating layer is a third distance, and the range of the third distance is 0.2mm~0.5mm.

[0008] In some embodiments, the second insulating layer includes an insulating area and a spacing area, the spacing area is opposite to the second type of identification point, and the distance range of the spacing area along the first direction is 0.4 mm to 1.5 mm.

[0009] In some embodiments, the length of the insulating region between the spacer region and the first collecting region ranges from 0.8 mm to 3 mm.

[0010] In some embodiments, the first distance ranges from 0.8 mm to 3 mm.

[0011] In some embodiments, the distance between the first marking point and the second marking point is greater than 1.62 mm.

[0012] In some embodiments, the opening shape of at least one of the second identification point or the first identification point is a hollow pattern, the hollow pattern includes a hollow area and a first part, the first part has an electrode paste, and the hollow area has a concave-convex structure; wherein the first auxiliary gate line or the second auxiliary gate line is composed of the electrode paste.

[0013] In some embodiments, the back-contact solar cell further includes a cell substrate, and the hollow area exposes a suede structure of the cell substrate.

[0014] In some embodiments, the second identification point is located at the second secondary gate line, between the first secondary gate line and the second secondary gate line, or in the second collection area.

[0015] The technical solution provided by the embodiments of the present application has at least the following advantages:

[0016] In the photovoltaic assembly provided by the embodiment of the present application, a first identification point and a second identification point are set, the first identification point is used to locate the first secondary grid line, the second identification point is used to locate the second secondary grid line, the first insulating layer is disconnected at the first mark point, and there is a certain second distance between the first identification point and the end of the first insulating layer, so that there is no insulating glue covering near the mark point, thereby ensuring that the outline of the mark point is clear and convenient for camera capture. The distance between the first identification point and the second collection area is the first distance, and the ratio of the first distance to the second distance ranges from 2 to 30. In this way, the first identification point and the end of the first secondary grid line have a certain distance, avoiding the problem of being unable to be recognized due to the overlap of the edge of the first identification point and the first secondary grid line. And the first identification point and the second collection area have a certain distance, which can also make the first secondary grid line between the first identification point and the second collection area covered with an insulating layer, thereby avoiding the short circuit problem between the first secondary grid line and the welding strips of different polarities. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] One or more embodiments are exemplarily illustrated by the figures in the corresponding drawings. These exemplified descriptions do not constitute a limitation on the embodiments. Unless otherwise specified, the figures in the drawings do not constitute a scale limitation. In order to more clearly illustrate the embodiments of the present application or the technical solutions in the traditional technology, the drawings required for use in the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0018] Figure 1 A schematic diagram of the structure of a photovoltaic module provided in one embodiment of the present application;

[0019] Figure 2 for Figure 1 A partial enlarged view of the middle A;

[0020] Figure 3 A schematic diagram of the structure of a first insulating layer in a photovoltaic module provided in one embodiment of the present application;

[0021] Figure 4 for Figure 1 A partial enlarged view of point B in the middle;

[0022] Figure 5 A schematic diagram of the structure of a second insulating layer in a photovoltaic module provided in one embodiment of the present application;

[0023] Figure 6 A schematic diagram of a structure of a first identification point in a photovoltaic module provided in an embodiment of the present application;

[0024] Figure 7 for Figure 6 A cross-sectional view along the C1-C2 section;

[0025] Figure 8 for Figure 6 Another cross-sectional view along the C1-C2 section. DETAILED DESCRIPTION

[0026] As known from the background technology, the yield rate of photovoltaic modules is poor.

[0027] The embodiment of the present application provides a photovoltaic module. By designing the positions of the first identification point and the second identification point, as well as the positions and proportions of the first identification point and the first insulating layer, the camera can more easily capture the first identification point and the second identification point while ensuring insulation, and then perform subsequent processes such as glue dispensing and solder paste printing, thereby improving the yield of the photovoltaic module.

[0028] In the description of the embodiments of the present application, the technical terms "first", "second", etc. are only used to distinguish different objects, and cannot be understood as indicating or implying relative importance or implicitly indicating the number, specific order or primary and secondary relationship of the indicated technical features. In the description of the embodiments of the present application, the meaning of "multiple" is more than two, unless otherwise clearly and specifically defined.

[0029] Reference to "embodiments" herein means that a particular feature, structure, or characteristic described in conjunction with the embodiments may be included in at least one embodiment of the present application. The appearance of the phrase in various locations in the specification does not necessarily refer to the same embodiment, nor is it an independent or alternative embodiment that is mutually exclusive with other embodiments. It is explicitly and implicitly understood by those skilled in the art that the embodiments described herein may be combined with other embodiments.

[0030] In the description of the embodiments of the present application, the term "and / or" is only a description of the association relationship of associated objects, indicating that three relationships may exist. For example, A and / or B can represent: A exists, A and B exist at the same time, and B exists. In addition, the character " / " in this article generally indicates that the associated objects before and after are in an "or" relationship.

[0031] In the description of the embodiments of the present application, the term "multiple" refers to more than two (including two). Similarly, "multiple groups" refers to more than two groups (including two groups), and "multiple pieces" refers to more than two pieces (including two pieces).

[0032] In the description of the embodiments of the present application, the technical terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, which are only for the convenience of describing the embodiments of the present application and simplifying the description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the embodiments of the present application.

[0033] In the description of the embodiments of the present application, unless otherwise clearly specified and limited, technical terms such as "installed", "connected", "connected", "fixed" and the like should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, and it can be the internal connection of two elements or the interaction relationship between two elements. For those of ordinary skill in the art, the specific meanings of the above terms in the embodiments of the present application can be understood according to the specific circumstances.

[0034] In the accompanying drawings corresponding to the embodiments of the present application, the thickness and area of ​​the layer are magnified for better understanding and ease of description. When describing a component (such as a layer, film, region or substrate) on another component or on the surface of another component, the component can be "directly" located on the surface of another component, or there can be a third component between the two components. On the contrary, when describing a component on the surface of another component or when another component is formed or provided on the surface of a component, it means that there is no third component between the two components. In addition, when describing a component as "substantially" formed on another component, it means that the component is not formed on the entire surface (or front surface) of the other component, nor is it formed on a partial edge of the entire surface.

[0035] In the description of the embodiments of the present application, when a component "includes" another component, unless otherwise specified, other components are not excluded, and other components may be further included. In addition, when a component such as a layer, film, region, or plate is referred to as being "on / located on" another component, it may be "directly on" the other component (i.e., located on the surface of the other component with no other components between them), or another component may exist in between. In addition, when a component such as a layer, film, region, or plate is "directly located on" another component, or when a component such as a layer, film, region, or plate is located on the surface of another component, it means that no other components are located in between.

[0036] The terms used in the description of the various embodiments described herein are only used to describe specific embodiments and are not intended to be limiting. As used in the description of the various embodiments described and in the appended claims, "the part" is also intended to include the plural form unless the context clearly indicates otherwise. Among them, a component includes a layer, a film, a region, or a plate.

[0037] The following will describe the various embodiments of the present application in detail with reference to the accompanying drawings. However, it will be appreciated by those skilled in the art that in the various embodiments of the present application, many technical details are provided in order to enable the reader to better understand the present application. However, even without these technical details and various changes and modifications based on the following embodiments, the technical solution claimed in the present application can be implemented.

[0038] Figure 1 A schematic diagram of the structure of a photovoltaic module provided in one embodiment of the present application; Figure 2 for Figure 1 A partial enlarged view of the middle A; Figure 3 A schematic structural diagram of a first insulating layer in a photovoltaic module provided in one embodiment of the present application; Figure 4 for Figure 1 A partial enlarged view of point B in the middle; Figure 5 A schematic structural diagram of a second insulating layer in a photovoltaic module provided in one embodiment of the present application.

[0039] According to some embodiments of the present application, a photovoltaic module is provided to improve the yield of the photovoltaic module.

[0040] refer to Figures 1 to 5The photovoltaic module includes: a back-contact solar cell, the back-contact solar cell includes: a first collecting area 11 and a second collecting area 12 alternately arranged along a first direction X; a first secondary grid line 101 and a second secondary grid line 102 alternately arranged along a second direction Y, the first secondary grid line 101 is located in the first collecting area 11 and is disconnected at the second collecting area 12, the second secondary grid line 102 is located in the second collecting area 12 and is disconnected in the first collecting area 11; a first identification point 105 and a second identification point 106, the first identification point 105 is located on the first secondary grid line 101, and the distance between the first identification point 105 and the second collecting area 12 is a first distance S1 ; The first identification point 105 and the second identification point 106 are staggered with each other; wherein, the first identification point 105 is used to locate the first secondary gate line 101, and the second identification point 106 is used to locate the second secondary gate line 102; insulating layer, the insulating layer is located at the end of the first secondary gate line 101 facing the second collection area 12; wherein, the insulating layer on the first secondary gate line 101 having the first identification point 105 is the first insulating layer 109, the first insulating layer 109 is disconnected at the first identification point 105, the distance between the first identification point 105 and the end of the first insulating layer 109 is the second distance S2, and the ratio of the first distance S1 to the second distance S2 ranges from 2 to 30.

[0041] In the photovoltaic assembly provided in the embodiment of the present application, a first identification point 105 and a second identification point 106 are set, the first identification point 105 is used to locate the first secondary grid line 101, and the second identification point 106 is used to locate the second secondary grid line 102. The first insulating layer 109 is disconnected at the first mark point, and there is a certain second distance S2 between the first identification point 105 and the end of the first insulating layer 109. In this way, there is no insulating glue covering the vicinity of the mark point, and the outline of the mark point can be ensured to be clear, which is convenient for camera capture. The distance between the first identification point 105 and the second collection area 12 is the first distance S1, and the ratio of the first distance S1 to the second distance S2 ranges from 2 to 30. In this way, the first identification point 105 has a certain distance from the end of the first secondary grid line 101, avoiding the problem of being unable to be recognized due to the overlap of the edges of the first identification point 105 and the first secondary grid line 101. The first identification point 105 and the second collection area 12 are at a certain distance, so that the first secondary grid line 101 between the first identification point 105 and the second collection area 12 can be covered with an insulating layer, thereby avoiding the short circuit problem between the first secondary grid line 101 and the welding strips of different polarities.

[0042] The back contact solar cell may be an IBC (Interdigitated Back Contact).

[0043] The back contact solar cell includes a cell substrate 100, which includes: a substrate, the substrate has a first surface and a second surface arranged opposite to each other, the first surface has a velvet structure, and the velvet structure can only add internal reflection of incident light to reduce optical loss and improve the photoelectric conversion efficiency of the cell. The first surface has a front surface field (FSF), and the conductivity type of its doped ions is the same as the conductivity type of the doped ions of the substrate. The field passivation effect is used to reduce the surface minority carrier concentration, thereby reducing the surface recombination rate, and at the same time, the series resistance can be reduced and the electron transmission capacity can be improved. The first surface also has a first passivation layer and a first anti-reflection layer, the first passivation layer is located on the surface of the front surface field, and the first anti-reflection layer is located on the surface of the first passivation layer. Among them, the cell substrate 100 does not necessarily include the front surface field, the first passivation layer and the first anti-reflection layer.

[0044] The second surface of the substrate has alternately arranged regions I and II, wherein region I is one of the P region or the N region, and region II is the other of the P region or the N region, with a gap between the P region and the N region, wherein the first secondary gate line 101 is located in region I, and the second secondary gate line 102 is located in region II.

[0045] In some embodiments, there is no gap between the P region and the N region, and an insulating film layer is provided between the P region and the N region to achieve insulation between the P region and the N region, thereby achieving insulation between the first secondary gate line 101 and the second secondary gate line 102 .

[0046] In some embodiments, the spacer region gap is flush with the P region and the N region, that is, the substrate is not etched, and the P region and the N region are insulated by some isolating film layers, which may be a passivation layer or an intrinsic semiconductor layer.

[0047] In some embodiments, the spacer region gap is lower than the P region and the spacer region gap is lower than the N region. The spacer region gap has a groove, which extends from the second surface toward the first surface. The groove is used to achieve automatic isolation between regions of different conductive types, which can eliminate the leakage caused by the formation of PN junctions between heavily doped P regions and N regions in the IBC battery, thereby affecting the battery efficiency.

[0048] In some embodiments, the surface of the spacer gap may be a polished surface structure, and the surface of the spacer gap may be a suede surface structure.

[0049] In some embodiments, the P region and the N region may have a tunneling silicon oxide layer and a doped polysilicon layer, respectively, wherein the P region has a P-type doped polysilicon layer and the N region has an N-type doped polysilicon layer. In other embodiments, the P region and the N region may have an intrinsic amorphous silicon layer, a doped amorphous silicon layer and a transparent conductive layer, respectively, wherein the P region has a P-type doped amorphous silicon layer and the N region has an N-type doped amorphous silicon layer.

[0050] In some embodiments, a second passivation layer and a second anti-reflection layer are disposed on the P region, the N region, and the spacer region, and the first secondary gate line 101 and the second secondary gate line 102 are located on the second anti-reflection layer.

[0051] In some embodiments, the cell substrate 100 has a first edge 1, a second edge 2 arranged opposite to the first edge 1, and two third edges (not marked) for connecting the first edge 1 and the second edge 2. The junction of the first edge 1 and the third edge and the junction of the second edge and the third edge have chamfers. The reason for the formation of the chamfers is that in conventional solar cells, due to the limitation of the monocrystalline silicon process for preparing the substrate, the monocrystalline silicon rod can only be made into a round shape at present. After the silicon rod is produced, it is sliced, that is, the cross section of the silicon rod is cut into the shape of a monocrystalline silicon wafer (after the area is calculated, it can maximize the illumination area within a unit, and can also maximize the saving of silicon rod materials, and is also convenient for the production of cells and components). Chamfers are often set at the junctions of various boundaries of the substrate to reduce the stress on the outside of the silicon wafer and avoid micro-damage to the corners of the silicon wafer.

[0052] In some embodiments, the back-contact solar cell also includes: a first edge main grid 103 close to the first edge 1 and a second edge main grid 104 close to the second edge 2, wherein no welding portion is provided on the first edge main grid 103 and the second edge main grid 104, thereby avoiding damage to the edge of the cell due to the stress of the welding strip.

[0053] In some embodiments, the back-contact solar cell further includes: a first main grid line 110 , the first main grid line 110 is located in the first collection area 11 , and the first main grid line is connected to the first auxiliary grid line 101 ; a second main grid line 120 , the second main grid line is located in the second collection area 12 , and the second main grid line is connected to the second auxiliary grid line 102 .

[0054] In other embodiments, the back-contact solar cell is a main-grid-free cell, and the back-contact solar cell includes a first connecting line, which is located in a first collection area and connected to a first secondary grid line; a second connecting line, which is located in a second collection area and connected to a second secondary grid line.

[0055] In some embodiments, the conductivity type of the first edge busbar 103 is different from the conductivity type of the adjacent busbars, for example Figure 1 The conductivity type of the first edge busbar 103 is different from the conductivity type of the adjacent second busbar line 120 .

[0056] In some embodiments, if the sum of the first edge busbar 103, the second edge busbar 104, the first busbar line 110, and the second busbar line 120 is an even number, then Figure 1The conductivity type of the second edge busbar 104 corresponding to the second edge 12 of the substrate is the same as the conductivity type of the second busbar line 120 .

[0057] In other embodiments, if the sum of the first edge bus gate, the second edge bus gate, the first bus line and the second bus line is an odd number, the conductivity type of the second edge bus gate corresponding to the second edge of the substrate is the same as the conductivity type of the first bus line.

[0058] In some embodiments, the first edge busbar is electrically connected to a pad (not shown) located between the first edge busbar and the second busbar through a connecting line. In other embodiments, the first edge busbar is electrically connected to the first busbar through a connecting line, such as a first through-connecting line. Similarly, the second edge busbar can be electrically connected to the adjacent second busbar through a second through-connecting line, thereby collecting carriers at the edge while avoiding edge breakage of the cell.

[0059] refer to Figure 2 The first collection area 11 corresponds to the area of ​​the first main gate line, and the second collection area 12 corresponds to the area of ​​the second main gate line. By disconnecting the first auxiliary gate line 101 at the second collection area 12 and the second auxiliary gate line 102 at the first collection area 11, the first auxiliary gate line 101 and the second auxiliary gate line 102 can be set to be disconnected small sections, thereby avoiding the short circuit problem between auxiliary gate lines and main gate lines of different conductive types, such as the first auxiliary gate line 101 and the second main gate line and the second auxiliary gate line 102 and the first main gate line.

[0060] In some embodiments, the first identification point 105 and the second identification point 106 are respectively used to position the first secondary gate line 101 and the second secondary gate line 102, and the first main gate line is set by positioning the position of the first secondary gate line 101, the insulating glue on the first secondary gate line 101 is printed, the pad on the first main gate line is printed, and the subsequent soldering tape connection process is performed; the second main gate line is set by positioning the position of the second secondary gate line 102, the insulating glue on the second secondary gate line 102 is printed, the pad on the second main gate line is printed, and the subsequent soldering tape connection process is performed.

[0061] In some embodiments, the material of the insulating layer may be insulating glue, such as EVA glue, acrylic glue, PET glue or PVA glue.

[0062] The insulating layer on the first secondary gate line is the first type insulating layer 111, and the insulating layer on the second secondary gate line is the second type insulating layer 112. The first insulating layer 109 is a part of the first type insulating layer 111, and the second insulating layer 113 (refer to Figure 4 ) is part of the second type of insulating layer.

[0063] In some embodiments, reference Figure 2 or Figure 4 , the distance between the first identification point 105 and the second collection area 12 is the first distance S1, and the range of the first distance S1 is 0.8 mm to 3 mm. When the distance between the first identification point 105 and the second collection area 12 is within this range, the first insulating layer 109 on the first secondary grid line 101 has a large length, thereby achieving better insulation for the first secondary grid line 101, so as to avoid the short circuit between the welding strip welded to the second main grid line and the first secondary grid line 101.

[0064] The first distance S1 may range from 0.8 mm to 1.0 mm, 1.0 mm to 1.5 mm, 1.5 mm to 2.0 mm, 2.0 mm to 2.5 mm, or 2.5 mm to 3 mm. The first distance S1 may be 0.8 mm, 1.2 mm, 1.7 mm, 2.1 mm, 2.4 mm, 2.7 mm, 2.9 mm, or 3 mm.

[0065] In some embodiments, the second distance S2 is in the range of 0.1 mm to 0.3 mm. The range of the second distance S2 can satisfy that the distance between the first insulating layer 109 and the first identification point 105 is large, and the edge of the first identification point 105 is unobstructed, so that the first identification point 105 can be directly identified and observed, and a series of operations are performed based on the first identification point 105.

[0066] Among them, the first distance S2 can be 0.1mm, 0.13mm, 0.18mm, 0.2mm, 0.22mm, 0.25mm, 0.27mm, 0.29mm or 0.3mm.

[0067] The ratio of the first distance S1 to the second distance S2 is in the range of 2 to 30, so that the first identification point 105 is at a certain distance from the end of the first secondary grid line 101, thereby avoiding the problem of being unable to be identified due to the overlap of the edge of the first identification point 105 with the first secondary grid line 101. In addition, the first identification point 105 is at a certain distance from the second collection area 12, so that the first secondary grid line 101 between the first identification point 105 and the second collection area 12 can be covered with an insulating layer, thereby avoiding the short circuit problem between the first secondary grid line 101 and the welding strips of different polarities.

[0068] The ratio of the first distance S1 to the second distance S2 may range from 2 to 5, 5 to 10, 10 to 15, 15 to 20, 20 to 25 or 25 to 30. The ratio of the first distance S1 to the second distance S2 may range from 3, 7, 9, 12, 15, 17, 21, 23, 26, 28, 29 or 30.

[0069] In some embodiments, the first identification point 105 may be a circle (eg Figure 3as shown), circular, square, triangular or any other shape.

[0070] In some embodiments, reference Figure 2 and Figure 4 The first identification point 105 close to the second collection area 12 is used as the first type identification point 105a, and the first identification point 105 close to the first collection area 11 is used as the second type identification point 105b. The distance between the first type identification point 105a and the end of the first insulating layer 109 is the second distance S2.

[0071] Among them, reference Figure 3 The diameter of the first type of identification point 105a ranges from 0.1 mm to 0.4 mm. The diameter of the first type of identification point 105a can be 0.1 mm, 0.13 mm, 0.18 mm, 0.2 mm, 0.25 mm, 0.28 mm, 0.33 mm, 0.36 mm or 0.4 mm.

[0072] The distance between the first type identification point 105a and the end of another first insulating layer 109 is a third distance S3. The range of the third distance S3 may be consistent with the range of the second distance, which will not be described in detail here.

[0073] The first insulating layer 109 near the first collection area 11 has two parts, the first part is the first insulating layer 109 adjacent to the first collection area 11, and the second part is the first insulating layer 109 adjacent to the first identification point 105. The width W1 of the first part along the second direction Y is greater than the width W2 of the second part along the second direction Y. The width W1 of the first part ranges from 0.35 mm to 0.55 mm, the width W2 of the second part ranges from 0.15 mm to 0.35 mm, and the length L of the first part ranges from 0.2 mm to 1.2 mm.

[0074] refer to Figure 4 The insulating layer is also located at the end of the second secondary gate line 102 facing the first collection area 11. The insulating layer on the second secondary gate line 102 adjacent to the second type identification point 105b is the second insulating layer 113. The second insulating layer 113 is disconnected adjacent to the second type identification point 105b. The distance between the second type identification point 105b and the end of the second insulating layer 113 is the third distance L3. The range of the third distance L3 is 0.2mm~0.5mm.

[0075] The third distance L3 may range from 0.2 mm to 0.3 mm, 0.3 mm to 0.4 mm, or 0.4 mm to 0.5 mm. The third distance L3 may be 0.2 mm, 0.23 mm, 0.27 mm, 0.31 mm, 0.34 mm, 0.37 mm, 0.45 mm, or 0.5 mm.

[0076] In some embodiments, reference Figure 4 and Figure 5 The second insulating layer 113 includes an insulating area 1131 and a spacing area 1132. The spacing area 1132 is opposite to the second type identification point 105b. The distance L2 of the spacing area 1132 along the first direction X ranges from 0.4 mm to 1.5 mm.

[0077] The distance L2 of the spacer 1132 along the first direction may range from 0.4 mm to 0.7 mm, from 0.7 mm to 1.2 mm, or from 1.2 mm to 1.5 mm. The distance L2 of the spacer 1132 along the first direction may range from 0.4 mm to 0.5 mm, from 0.6 mm to 0.7 mm, from 0.8 mm to 0.9 mm, from 1.0 mm to 1.1 mm, from 1.2 mm to 1.3 mm, from 1.4 mm to 1.5 mm.

[0078] In some embodiments, the length L4 of the insulating region 1131 between the spacer region 1132 and the first collecting region 11 is in the range of 0.8 mm to 3 mm.

[0079] The length L4 of the insulating region 1131 between the spacer 1132 and the first collecting region 11 may range from 0.8 mm to 1.2 mm, 1.2 mm to 1.5 mm, 1.5 mm to 2.2 mm, or 2.2 mm to 3 mm. The length L4 of the insulating region 1131 between the spacer 1132 and the first collecting region 11 may range from 0.8 mm to 1.2 mm, 1.2 mm to 1.5 mm, 1.5 mm to 2.2 mm, or 2.2 mm to 3 mm. The length L4 of the insulating region 1131 between the spacer 1132 and the first collecting region 11 may range from 0.8 mm to 1.1 mm, 1.3 mm, 1.6 mm, 1.9 mm, 2.1 mm, 2.3 mm, 2.5 mm, 2.6 mm, 2.7 mm, 2.9 mm, or 3 mm.

[0080] In some embodiments, the distance L1 between the first identification point 105 and the second identification point 106 is greater than 1.62 mm. Thus, for the camera's capture angle of view, the distance between the first identification point 105 and the second identification point 106 is larger, thereby preventing the camera from capturing the first identification point 105 and the second identification point 106 at the same time, causing misjudgment and affecting the final yield of the photovoltaic module.

[0081] Figure 6 A schematic diagram of a structure of a first identification point in a photovoltaic module provided in an embodiment of the present application; Figure 7 for Figure 6 A cross-sectional view along the C1-C2 section; Figure 8 for Figure 6 Another cross-sectional view along the C1-C2 section.

[0082] In some embodiments, the opening shape of at least one of the second identification point or the first identification point is a hollow pattern, the hollow pattern includes a hollow area and a first part, the first part has an electrode paste, and the hollow area has a concave-convex structure; wherein the first secondary grid line or the second secondary grid line is composed of the electrode paste. The hollow pattern and the concave-convex structure of the hollow area can enhance the distinction between the first identification point / the second identification point and the middle hollow area, and then when the camera recognizes, based on the different morphologies of the two, the refraction degree of light is also different, thereby forming different brightness and darkness, and the camera can quickly recognize the first identification point or the second identification point according to the brightness and darkness, reducing the difficulty of preparation.

[0083] by Figure 6 as well as Figure 7 The opening shape of the first identification point 105 shown is a hollow pattern as an example, the hollow pattern includes a hollow area 115 and a first part 1051, the first part 1051 has an electrode paste to form the first identification point 105, and the hollow area has a concave-convex structure 125; wherein, the first secondary gate line 101 or the second secondary gate line 102 is composed of electrode paste.

[0084] In some embodiments, reference Figure 7 The concavo-convex structure 125 may be a protrusion or a groove, so that the surface roughness of the hollow area is greater and the light reflection is different.

[0085] In some embodiments, reference Figure 8 The concave-convex structure may be the velvet structure 135 of the battery substrate, and the hollow area exposes the velvet structure of the battery substrate.

[0086] In some embodiments, the second identification point 106 is located at the second secondary gate line 102 , between the first secondary gate line 101 and the second secondary gate line 102 , or in the second collection area 12 .

[0087] In some embodiments, the back-contact solar cell includes a first welding portion 108 , the first welding portion 108 is located in the first collecting region 11 , and a second welding portion 107 , the second welding portion 107 is located in the second collecting region 12 .

[0088] The photovoltaic module also includes: a battery string, which is formed by connecting multiple back-contact solar cells as in any of the above embodiments; a packaging film, which covers the battery string; and a cover plate, which is located on the side of the packaging film away from the battery string.

[0089] In some embodiments, multiple battery strings and multiple battery cells can be electrically connected through welding strips, and the welding strips are welded to welding portions on the battery cells. For example, one end of the welding strip is electrically connected to a welding portion of a first busbar of a first battery cell, and the other end of the welding strip is electrically connected to a welding portion of a second busbar of an adjacent second battery cell.

[0090] In some embodiments, the insulating layer covers a portion of the surface of the solar cell, adjacent to the end surface of the second secondary grid line of the first collection area, so as to electrically insulate the welding strip corresponding to the first collection area from the second secondary grid line; similarly, the insulating layer also covers between the second collection area and the first secondary grid line, so as to insulate the welding strip corresponding to the second collection area from the first secondary grid line.

[0091] In some embodiments, the encapsulation film includes a first encapsulation film and a second encapsulation film, the first encapsulation film covers one of the front side or the back side of the solar cell, and the second encapsulation film covers the other of the front side or the back side of the solar cell. Specifically, at least one of the first encapsulation film or the second encapsulation film can be an organic encapsulation film such as a polyvinyl butyral (PVB) film, an ethylene-vinyl acetate copolymer (EVA) film, a polyethylene octene co-elastomer (POE) film or a polyethylene terephthalate (PET) film.

[0092] It is worth noting that there is a dividing line between the first encapsulation film and the second encapsulation film before the lamination process. After the lamination process, the photovoltaic module is formed and there is no longer the concept of the first encapsulation film and the second encapsulation film, that is, the first encapsulation film and the second encapsulation film have formed an integral encapsulation film.

[0093] In some embodiments, the cover plate may be a glass cover plate, a plastic cover plate or the like with a light-transmitting function. Specifically, the surface of the cover plate facing the encapsulation film may be a concave-convex surface, thereby increasing the utilization rate of the incident light. The cover plate includes a first cover plate and a second cover plate, the first cover plate is opposite to the first encapsulation film, and the second cover plate is opposite to the second encapsulation film; or the first cover plate is opposite to one side of the solar cell, and the second cover plate is opposite to the other side of the solar cell.

[0094] Those skilled in the art will appreciate that the above-mentioned embodiments are specific examples for implementing the present application, and in practical applications, various changes may be made to the embodiments in form and detail without departing from the spirit and scope of the present application. Any person skilled in the art may make various changes and modifications without departing from the spirit and scope of the present application, and therefore the scope of protection of the present application shall be subject to the scope defined in the claims.

Claims

1. A photovoltaic module, characterized in that: include: A back-contact solar cell, the back-contact solar cell comprising: a first collecting area and a second collecting area alternately arranged along a first direction; a first auxiliary grid line and a second auxiliary grid line alternately arranged along a second direction, the first auxiliary grid line is located in the first collecting area and is disconnected at the second collecting area, the second auxiliary grid line is located in the second collecting area and is disconnected at the first collecting area; A first identification point and a second identification point, wherein the first identification point is located on the first secondary grid line, and the distance between the first identification point and the second collection area is a first distance; the first identification point and the second identification point are staggered; wherein the first identification point is used to locate the first secondary grid line, and the second identification point is used to locate the second secondary grid line; an insulating layer, the insulating layer being located at an end of the first secondary gate line facing the second collecting area; Among them, the insulating layer on the first secondary gate line having the first marking point is a first insulating layer, the first insulating layer is disconnected at the first marking point, the distance between the first marking point and the end of the first insulating layer is a second distance, and the ratio of the first distance to the second distance ranges from 2 to 30.

2. The photovoltaic module according to claim 1, characterized in that: The second distance ranges from 0.1 mm to 0.3 mm.

3. The photovoltaic module according to claim 1, characterized in that: The first identification point close to the second collection area is used as a first-type identification point, and the first identification point close to the first collection area is used as a second-type identification point. The distance between the first-type identification point and the end of the first insulating layer is the second distance; the insulating layer is also located at the end of the second secondary gate line facing the first collection area, and the insulating layer on the second secondary gate line adjacent to the second-type identification point is the second insulating layer. The second insulating layer is disconnected at a location adjacent to the second-type identification point, and the distance between the second-type identification point and the end of the second insulating layer is a third distance, and the range of the third distance is 0.2mm to 0.5mm.

4. The photovoltaic module according to claim 3, characterized in that: The second insulating layer includes an insulating area and a spacing area, the spacing area is opposite to the second type of identification point, and the distance range of the spacing area along the first direction is 0.4 mm to 1.5 mm.

5. The photovoltaic module according to claim 4, characterized in that: The length of the insulating region between the spacing region and the first collecting region ranges from 0.8 mm to 3 mm.

6. The photovoltaic module according to claim 1, characterized in that: The first distance ranges from 0.8 mm to 3 mm.

7. The photovoltaic module according to claim 1, characterized in that: The distance between the first marking point and the second marking point is greater than 1.62 mm.

8. The photovoltaic module according to claim 1, characterized in that: The opening shape of at least one of the second identification point or the first identification point is a hollow pattern, the hollow pattern includes a hollow area and a first part, the first part has an electrode paste, and the hollow area has a concave-convex structure; wherein the first auxiliary gate line or the second auxiliary gate line is composed of the electrode paste.

9. The photovoltaic module according to claim 8, characterized in that: The back contact solar cell further comprises a cell substrate, and the hollow area exposes the velvet structure of the cell substrate.

10. The photovoltaic module according to claim 1 or 8, characterized in that: The second identification point is located at the second secondary gate line, between the first secondary gate line and the second secondary gate line, or in the second collection area.

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