Red light LED chip assembly and manufacturing method thereof

Abstract

The invention relates to a red light LED chip assembly and a manufacturing method thereof. The manufacturing method comprises the steps that a red light epitaxy is provided, and the red light epitaxy comprises a P-type semiconductor layer, a light-emitting layer and an N-type semiconductor layer which are stacked in sequence; forming a metal layer on the N-type semiconductor layer; carrying out annealing treatment on the red light epitaxy with the metal layer so as to form a modified layer on one side, close to the metal layer, of the N-type semiconductor layer; the metal layer is removed, the modified layer is exposed, and the modified layer is used for forming ohmic contact with a transparent conductive material. According to the manufacturing method of the LED chip assembly, the light emitting efficiency of the LED chip assembly can be effectively improved.

Description

Technical Field

[0001] The present invention relates to the technical field of LED chips, and in particular to a red light LED chip assembly and a manufacturing method thereof. Background Art

[0002] High-brightness AlGaInP light-emitting diodes are widely used. They are electronic components that directly convert electrical energy into light energy by generating photons through the radiation recombination of conduction band electrons and valence band holes in semiconductor materials. Compared with traditional light sources, they have the advantages of high efficiency, energy saving, environmental protection and longevity. They play an important role in energy conservation and emission reduction and green development, and are recognized as a new generation of green lighting sources in the 21st century. The development and application of semiconductors are also gradually deepening this concept, so improving the brightness of LEDs is an inevitable choice in the current semiconductor market.

[0003] At present, AlGaInP red vertical Micro LED uses metal electrodes, which are opaque and will block the light output of AlGaInP red vertical Micro LED, resulting in a double-peak distribution with a depression in the middle. When this AlGaInP red vertical Micro LED is used for display, it will affect the visual effect. Summary of the invention

[0004] In view of the above-mentioned deficiencies in the prior art, the purpose of the present application is to provide an LED chip assembly and a method for manufacturing the same, aiming to solve the problem of light blocking by the metal electrode of the red vertical Micro LED.

[0005] In a first aspect, the present application provides a method for manufacturing a red light LED chip assembly, comprising:

[0006] A red light epitaxy is provided, wherein the red light epitaxy comprises a P-type semiconductor layer, a light-emitting layer and an N-type semiconductor layer stacked in sequence; a metal layer is formed on the N-type semiconductor layer; the red light epitaxy having the metal layer is annealed to form a modified layer on a side of the N-type semiconductor layer close to the metal layer; the metal layer is removed to expose the modified layer, wherein the modified layer is used to form an ohmic contact with a transparent conductive material.

[0007] In an embodiment of the present application, when manufacturing a red light LED chip assembly, a metal layer is formed on the N-type semiconductor layer, and then the metal layer is annealed to form a modified layer on the side of the N-type semiconductor layer close to the metal layer. The modified layer can form a good ohmic contact with the transparent conductive material. Therefore, the transparent conductive material can be used to replace the traditional metal electrode, thereby improving the light extraction efficiency of the LED chip assembly.

[0008] As an optional implementation, the metal layer includes one or more of Au, Al, Ag, Cu, Ni, Zn, Be, and Ge.

[0009] As an optional implementation, the modified layer is a semiconductor layer formed after the metal elements in the metal layer replace the metal elements in the N-type semiconductor layer.

[0010] As an optional implementation manner, the annealing treatment of the red light epitaxy with the metal layer includes: placing the red light epitaxy with the metal layer in an environment with a temperature of 300-500° C. and heating it for 20-60 seconds.

[0011] As an optional implementation, the transparent conductive material includes one of ITO, IGO, and IZO.

[0012] As an optional embodiment, the method also includes: bonding one side of the red light epitaxial P-type semiconductor layer to a CMOS substrate, the CMOS substrate including a plurality of first contacts and at least one second contact; after bonding, the P-type semiconductor layer and the CMOS substrate are connected via a metal bonding layer; patterning the metal bonding layer, the P-type semiconductor layer, the light-emitting layer, the N-type semiconductor layer and the modified layer to form a plurality of independent semi-finished LED units on the CMOS substrate, the metal bonding layer between each of the semi-finished LED units and the CMOS substrate being connected to one of the first contacts; forming an insulating layer on the side walls of the plurality of independent semi-finished LED units; and covering the plurality of independent semi-finished LED units with the transparent conductive material, the transparent conductive material being connected to the second contact and the modified layer.

[0013] In an embodiment of the present application, one side of the P-type semiconductor layer of the red light epitaxy is bonded to the CMOS substrate, and then a modified layer that can form a good ohmic contact with the transparent conductive material is formed on the N-type semiconductor layer, and the red light epitaxy is patterned to form an independent semi-finished LED unit at each corresponding first contact position of the CMOS substrate, and finally the modified layer of the semi-finished LED unit and the second contact of the CMOS substrate are connected through the transparent semiconductor material. When the first contact and the second contact of the CMOS substrate are energized, the semi-finished LED unit can form a current loop. Since the modified layer of each semi-finished LED unit is covered with a transparent conductive material, the light emitted by the semi-finished LED unit can be emitted unobstructed through the N-type semiconductor side. Compared with the traditional LED unit using metal electrodes, the LED component of this solution can improve its light output efficiency.

[0014] As an optional implementation, the method further includes: covering the modified layer with the transparent conductive material to form a transparent electrode; and forming a metal electrode on the P-type semiconductor layer.

[0015] In the embodiment of the present application, by covering the modified layer with a transparent conductive material instead of a traditional metal electrode, it is possible to avoid the metal electrode blocking the light when the LED component emits light.

[0016] On the second aspect, based on the same idea, the present application also provides a red light LED chip component, including: a red light epitaxy, the red light epitaxy including a P-type semiconductor layer, a light-emitting layer, an N-type semiconductor layer and a modified layer stacked in sequence; wherein the modified layer is formed by forming a metal layer on the N-type semiconductor layer and annealing it, and the modified layer is used to form an ohmic contact with a transparent conductive material.

[0017] In an embodiment of the present application, a modified layer is formed on the N-type semiconductor layer, and the modified layer can form a good ohmic contact with the transparent conductive material. Therefore, the transparent conductive material can be used to replace the traditional metal electrode, thereby improving the light extraction efficiency of the LED chip assembly.

[0018] In the third aspect, based on the same idea, the present application provides another red light LED chip component, comprising: a P-type semiconductor layer, a light-emitting layer, an N-type semiconductor layer and a modified layer stacked in sequence; wherein the modified layer is formed by forming a metal layer on the N-type semiconductor layer and annealing it, and the modified layer is used to form an ohmic contact with a transparent conductive material; a transparent electrode formed by the transparent conductive material, covering the modified layer; a metal electrode, wherein the metal electrode is connected to the P-type semiconductor layer.

[0019] In the embodiment of the present application, a modified layer is formed on one side of the red light epitaxial N-type semiconductor layer, and a transparent conductive material is covered on the modified layer to replace the traditional metal electrode, so that the metal electrode can avoid blocking the light when the LED component emits light.

[0020] In the fourth aspect, based on the same idea, the present application provides another red light LED chip component, including: a CMOS substrate, the CMOS substrate including multiple first contacts and at least one second contact; multiple LED units arranged on the CMOS substrate, the LED units including a metal bonding layer, a P-type semiconductor layer, a light-emitting layer, an N-type semiconductor layer and a modified layer stacked in sequence; wherein the modified layer is formed by forming a metal layer on the N-type semiconductor layer and annealing it, and the modified layer is used to form an ohmic contact with a transparent conductive material, and the metal bonding layer of each of the LED units is connected to one of the first contacts; the side walls of the multiple LED units are provided with an insulating layer; a transparent conductive layer, and the transparent conductive layer is used to form an electrical connection between the second contact and the modified layer of each of the LED units.

[0021] In an embodiment of the present application, a transparent semiconductor material is used to connect the modified layer of the semi-finished LED unit and the second contact of the CMOS substrate. When the first contact and the second contact of the CMOS substrate are energized, the semi-finished LED unit can form a current loop. Since the modified layer of each semi-finished LED unit is covered with a transparent conductive material, the light emitted by the semi-finished LED unit can be emitted unobstructed through one side of the N-type semiconductor. Compared with the traditional LED unit using metal electrodes, the LED component of this solution can improve its light output efficiency. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] Figure 1 is a schematic diagram of the light emission of a traditional vertical red LED;

[0023] Figure 2 Schematic diagram of the light distribution of a traditional vertical red LED;

[0024] Figure 3 A schematic diagram of a process for manufacturing an LED chip assembly provided in an embodiment of the present application;

[0025] Figure 4 A schematic diagram of a red light epitaxial structure provided in an embodiment of the present application;

[0026] Figure 5 A schematic diagram of a red light epitaxial structure having the metal layer is provided for an embodiment of the present application;

[0027] Figure 6 A schematic diagram of a red light epitaxial structure after annealing and removal of a metal layer provided in an embodiment of the present application;

[0028] Figure 7-Figure 11 A schematic diagram of a method for manufacturing an LED chip assembly provided in an embodiment of the present application;

[0029] Figure 12-13A schematic diagram of another method for manufacturing an LED chip assembly provided in an embodiment of the present application.

[0030] Figure 10 - P-type semiconductor layer; 20 - light-emitting layer; 30 - N-type semiconductor layer; 40 - metal layer; 50 - modified layer; 60 - transparent electrode; 70 - metal electrode; 80 - metal bonding layer; 81 - first sub-metal bonding layer; 82 - second sub-metal bonding layer; 90 - CMOS substrate; 100 - first contact; 110 - second contact; 120 - insulating layer; 130 - transparent conductive layer. DETAILED DESCRIPTION

[0031] The technical solutions in the embodiments of the present invention will be described clearly and completely below in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative work are within the scope of protection of the present invention.

[0032] The disclosure of the present invention provides many different embodiments or examples to realize different structures of the present invention. In order to simplify the disclosure of the present invention, the components and settings of specific examples are described in the present invention. Of course, they are only examples, and the purpose is not to limit the present invention. In addition, the present invention can repeat reference numbers and / or reference letters in different examples, and this repetition is for the purpose of simplicity and clarity, which itself does not indicate the relationship between the various embodiments and / or settings discussed. In addition, the present invention provides various specific examples of processes and materials, but those of ordinary skill in the art can be aware of the application of other processes and / or the use of other materials.

[0033] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those generally understood by those skilled in the art to which the present application belongs. The terms used herein in the specification of the present application are only for the purpose of describing specific embodiments and are not intended to limit the present application. Generally, the terms can be understood at least in part according to the usage of the present invention. For example, the term "one or more" used in the present invention depends at least in part on the present invention and can be used to describe any component, structure or feature in a singular form, or can be used to describe a combination of components, structures or features in a plural form. Similarly, terms such as "one", "an" or "the" can also be understood at least in part to convey singular usage or convey plural usage depending on the present invention. In addition, the term "based on..." can be understood as not necessarily intended to convey a set of exclusive factors, but at least in part depending on the present invention can instead allow the presence of additional factors that do not necessarily have to be explicitly described.

[0034] It should be easily understood that the meanings of “on,” “over,” and “on…” in the present invention should be interpreted in the broadest manner, so that “on…” means not only “directly on something,” but also means “on something” including the presence of intermediate components or layers therebetween, and “on something” or “on something” means not only “on something” or “on something,” but also includes the meaning of “on something” or “on something” without any intermediate components or layers therebetween.

[0035] Additionally, for ease of description, spatially relative terms such as "below," "beneath," "lower," "above," "upper," etc. may be used herein to describe the relationship of one element or component to another element or component as shown in the drawings. The spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientations depicted in the drawings. The device may be otherwise oriented, rotated 90 degrees or at other orientations, and the spatially relative descriptors used herein may likewise be interpreted accordingly.

[0036] The term "layer" used in the present invention refers to a material portion including an area with a certain thickness. The layer can extend over the entire lower or upper structure, or can have a degree less than the scope of the lower or upper structure. In addition, the layer can be a region of a homogeneous or inhomogeneous continuous structure, and its thickness is less than the thickness of the continuous structure. For example, the layer can be located between the top surface and the bottom surface of the continuous structure or between any pair of horizontal planes therebetween. The layer can extend horizontally, vertically and / or along a tapered surface. The substrate can be a layer, one or more layers can be included therein, and / or one or more layers can be provided thereon, above and / or below. A layer can include multiple layers. For example, the semiconductor layer can include one or more doped or undoped semiconductor layers, and can have the same or different materials.

[0037] refer to Figure 1 and Figure 2 , Figure 1 Schematic diagram of the light emission of a traditional vertical red LED; Figure 2 The figure is a schematic diagram of the light distribution of a traditional vertical red light LED. In a traditional vertical red light LED, a P electrode and an N electrode are respectively set on a P-type semiconductor and an N-type semiconductor, both of which are made of metal. However, the metal electrode has a light-blocking effect. Therefore, the light emission of a traditional vertical red light LED will be like Figure 1 As shown, it is blocked by the electrode, and its luminous distribution is as follows Figure 2 As shown, the middle part blocked by the metal electrode is darker, resulting in uneven light distribution.

[0038] Based on this, the present application hopes to provide a solution that can solve the above-mentioned technical problems, the details of which will be described in the subsequent embodiments.

[0039] refer to Figure 3 , is a schematic flow chart of a method for manufacturing an LED chip assembly provided in an embodiment of the present application, the method comprising:

[0040] 101 : providing a red light epitaxy, wherein the red light epitaxy comprises a P-type semiconductor layer 10 , a light emitting layer 20 , and an N-type semiconductor layer 30 stacked in sequence.

[0041] In the embodiment of the present application, the red light epitaxy can be as follows: Figure 4 As shown, it includes a P-type semiconductor layer 10, a light emitting layer 20 and an N-type semiconductor layer 30 which are stacked in sequence.

[0042] Specifically, the above-mentioned N-type semiconductor layer 30 or the above-mentioned P-type semiconductor layer 10 may include III-V compound semiconductor materials such as AlInP, GaInP, AlGaInP, etc.; the above-mentioned light-emitting layer 20 may be a multiple quantum well structure (Multiple Quantum Well, MQW), in which the quantum wells or quantum barriers may include AlGaInP; the multiple quantum well structure may include one or two or three or four or five or six or six or seven or eight quantum wells (or at least one quantum hole).

[0043] 102 : forming a metal layer 40 on the N-type semiconductor layer 30 .

[0044] In the embodiment of the present application, the metal layer 40 is formed on the N-type semiconductor layer 30, and the metal layer 40 can be formed on the N-type semiconductor layer 30 by evaporation, sputtering or deposition. The metal layer 40 includes one or more of Au, Al, Ag, Cu, Ni, Zn, Be, and Ge.

[0045] For example, the metal layer 40 may be made of Au / Ge alloy, Au / Ge / Ni alloy or Au / Ge / Ni / Au alloy, and the reinforcement layer may have sublayers in the order of Ag, Sn, Ni, or Ag, Sn, Pt, or Ag, Al, Ni, or Al, Ni, Pt, or Ag, Ni, or Sn, Pt, or Ag, Al, Pt, Ni, or Au, Al, Pt, Ti, etc.

[0046] 103 : performing annealing treatment on the red light epitaxy having the metal layer 40 to form a modified layer 50 on a side of the N-type semiconductor layer 30 close to the metal layer 40 .

[0047] In the embodiment of the present application, the annealing treatment refers to a metal heat treatment process in which the red light epitaxy having the metal layer 40 is slowly heated to a certain temperature, maintained for a sufficient time, and then cooled at an appropriate speed.

[0048] In the embodiment of the present application, the red light epitaxy having the metal layer 40 is as follows: Figure 5 As shown; specifically, the above-mentioned annealing treatment of the red light epitaxy with the metal layer 40 specifically includes: placing the red light epitaxy with the metal layer 40 in a heating device, slowly raising the temperature to 300-500°C, and maintaining it in this temperature range for 20-60s; and then cooling it at an appropriate speed. During the annealing process, the metal elements in the metal layer 40 will replace the metal elements in the N-type semiconductor layer 30, and then the modified layer 50 will be formed at the original interface between the metal layer 40 and the N-type semiconductor layer 30. That is, the modified layer 50 is a semiconductor layer formed after the metal elements in the metal layer 40 replace the metal elements in the N-type semiconductor layer 30. For example, when the N-type semiconductor layer is AlGaInP and the metal layer is Au / Ge / Ni alloy, the modified layer is AlGeInP formed after the Ge element in the Au / Ge / Ni alloy replaces the Ga element in AlGaInP.

[0049] 104 : removing the metal layer 40 and exposing the modified layer 50 , wherein the modified layer 50 can form an ohmic contact with a transparent conductive material.

[0050] In the embodiment of the present application, the modified layer 50 can form an ohmic contact with the transparent conductive material. Therefore, after the modified layer 50 is formed at the original interface between the metal layer 40 and the N-type semiconductor layer 30, the remaining metal layer 40 is removed and the modified layer 50 is exposed. The specific structure can be referred to Figure 6 .

[0051] In an embodiment of the present application, when manufacturing a red light LED chip assembly, a metal layer 40 is formed on the N-type semiconductor layer 30, and then an annealing treatment is performed to form a modified layer 50 on the side of the N-type semiconductor layer 30 close to the metal layer 40. The modified layer 50 can form a good ohmic contact with the transparent conductive material, so that the transparent conductive material can be used to replace the traditional metal electrode, thereby improving the light extraction efficiency of the LED chip assembly.

[0052] refer to Figure 7-Figure 9As an optional embodiment, the above-mentioned LED chip assembly manufacturing method may also include: bonding one side of the red light epitaxial P-type semiconductor layer 10 to a CMOS substrate 90, wherein the CMOS substrate 90 includes a plurality of first contacts 100 and at least one second contact 110; after bonding, the P-type semiconductor layer 10 is connected to the CMOS substrate 90 via a metal bonding layer 80; patterning the metal bonding layer 80, the P-type semiconductor layer 10, the light-emitting layer 20, the N-type semiconductor layer 30 and the modified layer 50 to form a plurality of independent semi-finished LED units on the CMOS substrate 90, wherein the metal bonding layer 80 between each of the semi-finished LED units and the CMOS substrate 90 is connected to one of the first contacts 100; forming an insulating layer 120 on the side walls of the plurality of independent semi-finished LED units; and covering the plurality of independent semi-finished LED units with the transparent conductive material 130, wherein the transparent conductive material 130 is connected to the second contact 110 and the modified layer 50.

[0053] like Figure 7 As shown, a CMOS substrate 90 is provided, and the CMOS substrate 90 includes a plurality of first contacts 100 and at least one second contact 110. A first sub-metal bonding layer 81 is formed on the red light epitaxial P-type semiconductor layer 10, and a second sub-metal bonding layer 82 is formed on the CMOS substrate 90.

[0054] like Figure 8 As shown, the red light epitaxial bonding is performed to the CMOS substrate 90 , and the first sub-metal bonding layer 81 and the second sub-metal bonding layer 82 are fused to form a metal bonding layer 80 .

[0055] like Fig. 9 As shown, the metal bonding layer 80, the P-type semiconductor layer 10, the light-emitting layer 20, the N-type semiconductor layer 30 and the modified layer 50 are patterned to form a plurality of independent semi-finished LED units on the CMOS substrate 90, and the metal bonding layer 80 between each of the semi-finished LED units and the CMOS substrate 90 is connected to one of the first contacts 100.

[0056] like Fig.10 As shown, an insulating layer 120 is formed on the side walls of the plurality of independent semi-finished LED units.

[0057] like Fig.11 As shown, the transparent conductive material 130 is covered on the plurality of independent semi-finished LED units, and the transparent conductive material 130 is connected to the second contact 110 and the modified layer 50. The transparent conductive material 130 includes one of ITO, IGO and IZO.

[0058] It is understandable that Figure 4 The provided red light epitaxy is first bonded to the above-mentioned CMOS substrate 90, and then the above-mentioned steps 101-103 are performed to form the above-mentioned modified layer 50 on the above-mentioned N-type semiconductor layer 30; and then the steps 101-103 are performed as follows: Figure 9-11 This application will not elaborate on this.

[0059] In the embodiment of the present application, one side of the P-type semiconductor layer 10 of the red light epitaxy is bonded to the CMOS substrate 90, and then a modified layer 50 that can form a good ohmic contact with the transparent conductive material is formed on the N-type semiconductor layer 30, and the red light epitaxy is patterned to form an independent semi-finished LED unit at each corresponding first contact 100 position of the CMOS substrate 90, and finally the modified layer 50 of the semi-finished LED unit and the second contact 110 of the CMOS substrate 90 are connected through the transparent semiconductor material. When the first contact 100 and the second contact 110 of the CMOS substrate 90 are energized, the semi-finished LED unit can form a current loop. Since the modified layer 50 of each semi-finished LED unit is covered with a transparent conductive material, the light emitted by the semi-finished LED unit can be emitted unobstructed through the N-type semiconductor side. Compared with the traditional LED unit using metal electrodes, the LED component of this solution can improve its light output efficiency.

[0060] refer to Figure 12-13 As an optional implementation, the LED chip assembly manufacturing method may further include: covering the modified layer 50 with the transparent conductive material to form a transparent electrode 60; and forming a metal electrode 70 on the P-type semiconductor layer 10. The transparent conductive material includes one of ITO, IGO, and IZO.

[0061] In the embodiment of the present application, by covering the modified layer 50 with a transparent conductive material instead of a traditional metal electrode, it is possible to avoid the metal electrode blocking the light when the LED component emits light.

[0062] refer to Figure 6 The present application also provides a red light LED chip component, including: a red light epitaxy, wherein the red light epitaxy includes a P-type semiconductor layer 10, a light-emitting layer 20, an N-type semiconductor layer 30 and a modified layer 50 stacked in sequence; wherein the modified layer 50 is formed by forming a metal layer 40 on the N-type semiconductor layer 30 and annealing it, and the modified layer 50 can form an ohmic contact with a transparent conductive material.

[0063] In the embodiment of the present application, a modified layer 50 is formed on the N-type semiconductor layer 30, and the modified layer 50 can form a good ohmic contact with the transparent conductive material. Therefore, the transparent conductive material can be used to replace the traditional metal electrode, thereby improving the light extraction efficiency of the LED chip assembly.

[0064] refer to Fig.11 Based on the same idea, the present application provides another red light LED chip component, comprising: a CMOS substrate 90, on which a plurality of first contacts 100 and at least one second contact 110 are provided; a plurality of LED units arranged on the CMOS substrate 90, wherein the LED units comprise a metal bonding layer 80, a P-type semiconductor layer 10, a light-emitting layer 20, an N-type semiconductor layer 30 and a modified layer 50 stacked in sequence; wherein the modified layer 50 is formed by forming a metal layer 40 on the N-type semiconductor layer 30 and annealing the metal layer 40, and the modified layer 50 can form an ohmic contact with a transparent conductive material, and the metal bonding layer 80 of each of the LED units is connected to one of the first contacts 100; an insulating layer 120 is provided on the side walls of the plurality of LED units; a transparent conductive layer 130, and the transparent conductive layer is used to form an electrical connection between the second contact 110 and the modified layer 50 of each of the LED units.

[0065] In an embodiment of the present application, a transparent semiconductor material is used to connect the modified layer 50 of the semi-finished LED unit and the second contact 110 of the CMOS substrate 90. When the first contact 100 and the second contact 110 of the CMOS substrate 90 are energized, the semi-finished LED unit can form a current loop. Since the modified layer 50 of each semi-finished LED unit is covered with a transparent conductive layer 130, and the transparent conductive layer 130 is formed by the above-mentioned transparent conductive material, the light emitted by the semi-finished LED unit can be emitted unobstructed through one side of the N-type semiconductor. Compared with the traditional LED unit using metal electrodes, the LED component of this solution can improve its light output efficiency.

[0066] refer to Fig.13 Another red light LED chip component provided by the present application includes: a P-type semiconductor layer 10, a light-emitting layer 20, an N-type semiconductor layer 30 and a modified layer 50 stacked in sequence; wherein the modified layer 50 is formed by forming a metal layer 40 on the N-type semiconductor layer 30 and annealing it, and the modified layer 50 can form an ohmic contact with a transparent conductive material; a transparent electrode 60 formed by the transparent conductive material, covering the modified layer 50; a metal electrode 70, and the metal electrode 70 is connected to the P-type semiconductor layer 10.

[0067] In the embodiment of the present application, a modified layer is formed on one side of the red light epitaxial N-type semiconductor layer 30, and a transparent conductive material is covered on the modified layer to replace the traditional metal electrode, so that the metal electrode can avoid blocking the light when the LED component emits light.

[0068] It should be understood that the application of the present invention is not limited to the above examples. For ordinary technicians in this field, improvements or changes can be made based on the above description. All these improvements and changes should fall within the scope of protection of the claims attached to the present invention.

Claims

1. A method for manufacturing a red light LED chip assembly, characterized in that: include: A red light epitaxy is provided, wherein the red light epitaxy comprises a P-type semiconductor layer, a light-emitting layer and an N-type semiconductor layer stacked in sequence; forming a metal layer on the N-type semiconductor layer; Annealing the red light epitaxy having the metal layer to form a modified layer on a side of the N-type semiconductor layer close to the metal layer; The metal layer is removed to expose the modified layer, and the modified layer is used to form an ohmic contact with a transparent conductive material.

2. The method for manufacturing a red LED chip assembly according to claim 1, characterized in that: The metal layer includes one or more of Au, Al, Ag, Cu, Ni, Zn, Be, and Ge.

3. The method for manufacturing a red LED chip assembly according to claim 1, characterized in that: The modified layer is a semiconductor layer formed after the metal elements in the metal layer replace the metal elements in the N-type semiconductor layer.

4. The method for manufacturing a red light LED chip assembly according to claim 1, wherein: The annealing treatment of the red light epitaxy having the metal layer comprises: The red light epitaxy with the metal layer is placed in an environment with a temperature of 300-500° C. and heated for 20-60 seconds.

5. The method for manufacturing a red LED chip assembly according to claim 1, characterized in that: The transparent conductive material includes one of ITO, IGO and IZO.

6. The method for manufacturing a red LED chip assembly according to any one of claims 1 to 5, characterized in that: The method further comprises: Bonding one side of the red light epitaxial P-type semiconductor layer to a CMOS substrate, wherein the CMOS substrate includes a plurality of first contacts and at least one second contact; After bonding, the P-type semiconductor layer and the CMOS substrate are connected via a metal bonding layer; Patterning the metal bonding layer, the P-type semiconductor layer, the light-emitting layer, the N-type semiconductor layer and the modified layer to form a plurality of independent semi-finished LED units on the CMOS substrate, wherein the metal bonding layer between each of the semi-finished LED units and the CMOS substrate is connected to one of the first contacts; forming an insulating layer on the side walls of the plurality of independent semi-finished LED units; The transparent conductive material is covered on the plurality of independent semi-finished LED units, and the transparent conductive material is connected to the second contact point and the modified layer.

7. The method for manufacturing a red LED chip assembly according to any one of claims 1 to 5, characterized in that: The method further comprises: Covering the modified layer with the transparent conductive material to form a transparent electrode; A metal electrode is formed on the P-type semiconductor layer.

8. A red light LED chip assembly, characterized in that: include: Red light epitaxy, the red light epitaxy comprising a P-type semiconductor layer, a light-emitting layer, an N-type semiconductor layer and a modified layer stacked in sequence; The modified layer is formed by forming a metal layer on the N-type semiconductor layer and performing annealing, and the modified layer is used to form an ohmic contact with a transparent conductive material.

9. A red light LED chip assembly, characterized in that: include: A P-type semiconductor layer, a light-emitting layer, an N-type semiconductor layer and a modified layer stacked in sequence; Wherein, the modified layer is formed by forming a metal layer on the N-type semiconductor layer and performing annealing, and the modified layer is used to form an ohmic contact with a transparent conductive material; A transparent electrode formed of the transparent conductive material, covering the modified layer; A metal electrode is connected to the P-type semiconductor layer.

10. A red light LED chip assembly, characterized in that: include: A CMOS substrate, wherein the CMOS substrate comprises a plurality of first contacts and at least one second contact; A plurality of LED units are arranged on the CMOS substrate, wherein the LED units include a metal bonding layer, a P-type semiconductor layer, a light-emitting layer, an N-type semiconductor layer and a modified layer stacked in sequence; Wherein, the modified layer is formed by forming a metal layer on the N-type semiconductor layer and performing annealing, and the modified layer is used to form an ohmic contact with a transparent conductive material, and the metal bonding layer of each LED unit is connected to one of the first contacts; The side walls of the plurality of LED units are provided with an insulating layer; A transparent conductive layer is used to form an electrical connection between the second contact and the modified layer of each LED unit.

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