Current regulated parallel gate light emitting device structure and display panel

Abstract

The application discloses a current-regulated parallel gate light-emitting device structure, and relates to the field of photoelectric display, which comprises a light-emitting functional layer arranged on a substrate, a first electron transport layer and a first hole transport layer arranged on both sides of the light-emitting functional layer, a first cathode arranged on the first electron transport layer, a second anode arranged on the first hole transport layer, and a current-regulated gate structure; the current-regulated gate structure comprises a carrier transport layer and a gate electrode, and is arranged on the first cathode or the second anode. In the application, a bias signal is applied between the gate electrode and the first cathode or the second anode, the migration amount of electron-type carriers or hole-type carriers participating in recombination and light emission can be controlled, and the light-emitting brightness and / or the light-emitting efficiency of the light-emitting functional layer are improved.

Description

TECHNICAL FIELD

[0001] The present application relates to the field of optoelectronic display, in particular to a current-regulated parallel gate light-emitting device structure and display panel. BACKGROUND

[0002] Quantum dots, as a cutting-edge light-emitting material, have shown great application prospects and leading role in the emerging display technology field due to their excellent characteristics such as extremely narrow half-peak width, high color purity, high quantum efficiency, and widely adjustable spectral range, especially in the development of quantum dot light-emitting diode (QLED) technology. QLED technology is considered as a pioneer in the future display device field and is expected to lead an innovation in visual technology.

[0003] However, although the QLED technology has a promising future, the recombination process of charge carriers becomes a key bottleneck restricting its luminous efficiency or brightness in actual application. In order to achieve the best device efficiency, researchers must carefully design and optimize each functional layer, as well as select high-performance quantum dot materials. This process not only has high technical difficulty, but also is time-consuming and labor-intensive, requiring a large amount of resource input, thereby increasing the cost and time of research and development.

[0004] In addition, due to the inherent difference in mobility between electrons and holes, the problem of charge carrier imbalance often occurs in the light-emitting layer of QLED devices. This imbalance leads to low efficiency in the recombination of free-state charge carriers, which in turn affects the overall light-emitting performance of the device. This problem not only hinders the development of QLED technology, but also is a common challenge faced by organic light-emitting diode (OLED) devices, becoming a key factor restricting the further improvement of the performance of these two display technologies.

[0005] Therefore, how to effectively improve the recombination process of charge carriers and balance the mobility of electrons and holes without significantly increasing the cost, thereby improving the luminous efficiency of QLED and OLED devices, is an important issue that needs to be addressed in the current display technology field. SUMMARY

[0006] In view of the shortcomings of the prior art, the technical problem to be solved by the present application is to provide a current-regulated parallel gate light-emitting device structure, aiming to achieve the improvement of luminous efficiency or luminous brightness through gate regulation.

[0007] To achieve the above object, the application provides a current-regulated parallel gate light-emitting device structure, which comprises a substrate, a light-emitting functional layer arranged on the substrate, a first electron transport layer and a first hole transport layer arranged on both sides of the light-emitting functional layer, a first cathode arranged on the first electron transport layer, a second anode arranged on the first hole transport layer, and a current-regulated gate structure; the current-regulated gate structure comprises a carrier transport layer and a gate electrode; the current-regulated gate structure is arranged on the first cathode or the second anode, wherein when the gate electrode of the current-regulated gate structure is arranged as a first gate electrode on the side of the first cathode, the carrier transport layer is a second electron transport layer, and when the gate electrode of the current-regulated gate structure is arranged as a second gate electrode on the side of the second anode, the carrier transport layer is a second hole transport layer.

[0008] A driving signal is applied between the first cathode and the second anode to make electrons and holes recombine and emit light in the light-emitting functional layer; a bias signal is applied between the gate electrode and the first cathode and / or the second anode to control the migration amount of the electron-type carrier or the hole-type carrier participating in the recombination and emission of light and control the light-emitting brightness and / or the light-emitting efficiency of the light-emitting functional layer.

[0009] The technical scheme is based on a parallel gate light-emitting device, and a current-regulated gate structure is arranged on the anode end or the cathode end of the device, electron or hole injection is realized by a current injection mode, the migration rate of the electron or hole under the original device driving condition is regulated, the light-emitting brightness or the light-emitting efficiency of the light-emitting device is regulated, especially the light-emitting efficiency of the light-emitting device is regulated, the problem that the light-emitting efficiency is affected by the mismatch of the single-side carrier injection caused by the unbalanced migration rate of the electron-hole recombination in the light-emitting functional layer is solved, and the light-emitting efficiency of the light-emitting device structure based on the application can be effectively improved, and energy can be saved.

[0010] In a specific embodiment, a current-limiting resistor is connected in series in a circuit loop formed by the current-regulated gate structure, the first cathode or the second anode, and the bias signal; the current-limiting resistor is deposited in the current-regulated gate structure or is independent of the current-regulated gate structure.

[0011] In the technical scheme, the current-limiting resistor is used to control the current of the transport layer of the current-regulated gate to avoid the burning of the device caused by the excessively large inter-electrode current.

[0012] In one embodiment, if the current regulating gate structure is disposed on the first cathode, a first bias signal is applied between the gate and the first cathode; the first bias signal is configured to increase the electron injection amount of the first cathode to the light-emitting functional layer when the first gate applies a negative potential to the first cathode, and to decrease the electron injection amount of the first cathode to the light-emitting functional layer when the first gate applies a positive potential to the first cathode, so as to control the light-emitting brightness or the light-emitting efficiency of the electron-hole recombination in the light-emitting functional layer.

[0013] In one embodiment, if the current regulating gate structure is disposed on the second anode, a second bias signal is applied between the gate and the second anode; the second bias signal is configured to increase the hole injection amount of the second anode to the light-emitting functional layer when the second gate applies a positive potential to the second anode, and to decrease the hole injection amount of the second anode to the light-emitting functional layer when the second gate applies a negative potential to the second anode, so as to control the light-emitting brightness or the light-emitting efficiency of the electron-hole recombination in the light-emitting functional layer.

[0014] In one embodiment, when the intrinsic carrier concentration of the first carrier corresponding to the current regulating gate structure in the light-emitting functional layer is less than the intrinsic carrier concentration of the opposite carrier, the carrier injection amount of the first carrier is increased to improve the light-emitting brightness and the light-emitting efficiency of the electron-hole recombination in the light-emitting functional layer; in one embodiment, when the intrinsic carrier concentration of the first carrier corresponding to the current regulating gate structure in the light-emitting functional layer is greater than the intrinsic carrier concentration of the opposite carrier, the carrier injection amount of the first carrier is increased to improve the light-emitting brightness of the electron-hole recombination in the light-emitting functional layer;

[0015] In one embodiment, the first carrier is the electron-type carrier or the hole-type carrier, and the opposite carrier is the opposite hole-type carrier or the opposite electron-type carrier.

[0016] In one embodiment, the current regulating gate structure includes a first regulating gate structure disposed on the first cathode and a second regulating gate structure disposed on the second anode, the first regulating gate structure includes a second electron transport layer, the first gate, which are stacked and arranged on the first cathode, and the second regulating gate structure includes a second hole transport layer, the second gate, which are stacked and arranged on the second anode.

[0017] The first bias signal is applied between the first gate and the first cathode, and the second bias signal is applied between the second gate and the second anode, so as to control the migration amount of the electron-type carriers and the hole-type carriers participating in the recombination light emission, and control the light emission efficiency of the light emission functional layer.

[0018] In an embodiment, the device structure is configured as:

[0019] The intrinsic mobility of the electron-type carriers of the light emission functional layer is less than the intrinsic mobility of the hole-type carriers of the light emission functional layer, the first gate applies a negative potential to the first cathode to increase the electron injection amount of the first cathode to the light emission functional layer, and the second gate applies a negative potential to the second anode to reduce the hole injection amount of the second anode to the light emission functional layer.

[0020] The intrinsic mobility refers to the electron mobility or hole mobility in the light emission functional layer without applying the first bias signal and the second bias signal.

[0021] In an embodiment, the device structure is configured as:

[0022] The intrinsic mobility of the hole-type carriers of the light emission functional layer is less than the intrinsic mobility of the electron-type carriers of the light emission functional layer, the first gate applies a positive potential to the first cathode to reduce the electron injection amount of the first cathode to the light emission functional layer, and the second gate applies a positive potential to the second anode to increase the hole injection amount of the second anode to the light emission functional layer.

[0023] The intrinsic mobility refers to the electron mobility or hole mobility in the light emission functional layer without applying the first bias signal and the second bias signal.

[0024] In an embodiment, the light emission device is an LED, an OLED or a QLED; when the light emission device is the OLED, a first electron injection layer is further included between the first electron transport layer and the first cathode, and a first hole injection layer is further included between the first hole transport layer and the second anode.

[0025] In a second aspect of the present application, a display panel based on current-gate light emission regulation is provided, and the panel comprises:

[0026] A panel array composed of the current-regulated parallel-gate light emission device structure provided by any one of the embodiments of the first aspect of the present application.

[0027] The beneficial effects of the present application are: 1) the present application is based on a parallel grid light emitting device, and a current regulating grid structure is arranged at the anode end or the cathode end of the device, the injection of electrons or holes is realized by current injection, the regulation of electron and hole mobility under the original device driving condition is realized, the regulation of light emitting brightness or light emitting efficiency of the light emitting device is realized, especially the regulation of light emitting efficiency of the light emitting device, the problem of affecting the light emitting efficiency caused by the mismatch of one-sided carrier injection due to the imbalance of electron-hole recombination mobility in the light emitting functional layer of the light emitting device is solved, based on the light emitting device structure of the present application, the light emitting efficiency can be effectively improved, and energy can be saved. BRIEF DESCRIPTION OF DRAWINGS

[0028] Figure 1 is a schematic diagram of a light emitting device structure of a parallel grid light emitting device in which the current regulating grid in one embodiment of the present application is arranged at the electron injection side of the parallel grid light emitting device;

[0029] Figure 2 is a schematic diagram of a light emitting device structure of a parallel grid light emitting device in which the current regulating grid in one embodiment of the present application is arranged at the hole injection side of the parallel grid light emitting device;

[0030] Figure 3 is a schematic diagram of a light emitting device structure of a current regulating double grid structure in one embodiment of the present application;

[0031] Figure 4 is a driving schematic diagram of a light emitting device structure of a current regulating double grid structure for improving light emitting efficiency in one embodiment of the present application. DETAILED DESCRIPTION

[0032] The embodiments of the present patent are described in detail below, and examples of the embodiments are shown in the drawings, wherein the same or similar reference signs represent the same or similar elements or elements having the same or similar functions throughout. The embodiments described below by referring to the drawings are exemplary and are only used to explain the present patent, and cannot be understood as a limitation of the present patent.

[0033] In the description of the present patent, it should be understood that the terms "center", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer" and the like indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the present patent and simplifying the description, and therefore cannot be understood as indicating or implying that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as a limitation of the present patent.

[0034] In the description of the present patent, it is necessary to point out that, unless otherwise explicitly specified and limited, the terms "mount", "connect", "link", "set" should be understood in a broad sense, for example, it can be fixedly connected, set, or it can be detachably connected, set, or integrally connected, set. For those skilled in the art, the specific meaning of the above terms in the present patent can be understood according to the specific circumstances.

[0035] The embodiment of the present application provides a current-regulated parallel gate light-emitting device structure, as shown in the figure. Figures 1-3 In the present application, based on the parallel gate structure light-emitting device, and the current-regulated gate structure 107 is arranged at the anode end or the cathode end of the device, the injection of electrons or holes is realized by the current injection mode, the regulation of the electron and hole mobility under the original device driving condition is realized, the regulation of the light-emitting brightness or the light-emitting efficiency of the light-emitting device is realized, especially the regulation of the light-emitting efficiency of the light-emitting device, the problem of affecting the light-emitting efficiency caused by the mismatch of the unilateral carrier injection due to the imbalance of the electron-hole recombination mobility in the light-emitting functional layer 102 is solved, and based on the light-emitting device structure of the present application, the light-emitting efficiency can be effectively improved, and energy can be saved.

[0036] In the first embodiment of the present application, a current-regulated parallel gate light-emitting device structure is provided, the device structure comprises: a substrate 101, a light-emitting functional layer 102 arranged on the substrate 101, a first electron transport layer 103 and a first hole transport layer 104 arranged on both sides of the light-emitting functional layer 102, a first cathode 105 arranged on the first electron transport layer 103, a second anode 106 arranged on the first hole transport layer 104, and a current-regulated gate structure 107; the current-regulated gate comprises a carrier transport layer and a gate electrode; the current-regulated gate structure 107 is arranged on the first cathode 105 or the second anode 106, wherein when the gate electrode of the current-regulated gate structure 107 is arranged as a first gate 109 on the side of the first cathode 105, the carrier transport layer is a second electron transport layer 108, and when the gate electrode of the current-regulated gate structure 107 is arranged as a second gate 111 on the side of the second anode 106, the carrier transport layer is a second hole transport layer 110;

[0037] A driving signal is applied between the first cathode 105 and the second anode 106, so that the electron-hole recombination in the light-emitting functional layer 102 emits light; a bias signal is applied between the gate electrode and the first cathode 105 and / or the second anode 106, so as to control the migration amount of the electron-type carrier or the hole-type carrier participating in the recombination, and control the light-emitting brightness and / or the light-emitting efficiency of the light-emitting functional layer 102.

[0038] In this embodiment, the current control gate can be located on either the electron injection side or the hole injection side. Improving luminous efficiency simply requires balancing the hole-electron injection ratio. For example, if one side has less carrier injection, a current control gate can be placed on that side to increase the carrier injection amount, thereby improving luminous efficiency. Conversely, a current control gate can be placed on the side with more carrier injection to reduce the carrier injection amount and improve luminous efficiency. Furthermore, it is worth mentioning that, to improve brightness without considering luminous efficiency, a current gate structure can be placed on the side with more carriers to increase the carrier injection amount and further improve luminous efficiency.

[0039] Preferably, in this embodiment, a current-limiting resistor is connected in series in the circuit loop formed by the current-regulating gate structure 107, the first cathode 105 or the second anode 106, and the bias signal; the current-limiting resistor is deposited in the current-regulating gate structure 107 or is independent of the current-regulating gate structure 107.

[0040] The current-limiting resistor is used to control the transmission layer current of the current-regulating gate, to prevent excessive inter-electrode current from burning out the device, and at the same time, it can adapt to relatively high driving voltages.

[0041] like Figure 2 As shown, in a typical embodiment, the current-regulating gate structure 107 is disposed on the first cathode 105, and a first bias signal is applied between the gate and the first cathode 105. The first bias signal is configured to: when the first gate 109 applies a negative phase potential relative to the first cathode 105 to increase the amount of electron injection from the first cathode 105 to the light-emitting functional layer 102, and when the first gate 109 applies a positive phase potential relative to the first cathode 105 to reduce the amount of electron injection from the first cathode 105 to the light-emitting functional layer 102, thereby controlling the luminous brightness or luminous efficiency of electron-hole recombination in the light-emitting functional layer.

[0042] like Figure 3 As shown, in another typical embodiment, the current-regulating gate structure 107 is disposed on the second anode 106, and a second bias signal is applied between the gate and the second anode 106. When the second bias signal is configured to: apply a positive phase potential to the second gate 111 relative to the second anode 106 to increase the amount of hole injection from the second anode 106 to the light-emitting functional layer 102, and apply a negative phase potential to the second gate 111 relative to the second anode 106 to reduce the amount of hole injection from the second anode 106 to the light-emitting functional layer 102, the luminous brightness or luminous efficiency of electron-hole recombination in the light-emitting functional layer is controlled.

[0043] The above two typical schemes are respectively considered from the current control gate being arranged at the electron injection side and the hole injection control.

[0044] In fact, in the embodiment, when the current control gate structure 107 is arranged at the low mobility (in the light-emitting functional layer 102) side, the injection amount of the corresponding carrier is increased, and the light-emitting brightness and the light-emitting efficiency are increased synchronously. When the current control gate structure 107 is arranged at the high mobility (in the light-emitting functional layer 102) side, the injection amount of the corresponding carrier is increased, the light-emitting brightness is increased, and the light-emitting efficiency is decreased. The injection amount of the corresponding carrier is decreased, the light-emitting brightness is decreased, and the light-emitting efficiency is increased.

[0045] That is, when the intrinsic carrier concentration of the first carrier corresponding to the current control gate structure 107 in the light-emitting functional layer 102 is less than the intrinsic carrier concentration of the opposite carrier, the carrier injection amount of the first carrier is increased to increase the light-emitting brightness and the light-emitting efficiency of the electron-hole recombination in the light-emitting functional layer.

[0046] That is, when the intrinsic carrier concentration of the first carrier corresponding to the current control gate structure 107 in the light-emitting functional layer 102 is greater than the intrinsic carrier concentration of the opposite carrier, the carrier injection amount of the first carrier is increased to increase the light-emitting brightness of the electron-hole recombination in the light-emitting functional layer.

[0047] The first carrier is the electron-type carrier or the hole-type carrier, and the opposite carrier is the opposite hole-type carrier or the electron-type carrier.

[0048] Further, in fact, in the embodiment, the current control gate can be arranged at the electron injection side and the hole injection side respectively to control the light-emitting brightness and the light-emitting efficiency of the light-emitting device.

[0049] Typically, in the typical case of the embodiment, the current control gate structure 107 includes a first control gate structure arranged on the first cathode 105 and a second control gate structure arranged on the second anode 106. The first control gate structure includes a second electron transport layer 108, the first gate 109, which are stacked and arranged on the first cathode 105. The second control gate structure includes a second hole transport layer 110, the second gate 111, which are stacked and arranged on the second anode 106.

[0050] The first bias signal is applied between the first gate 109 and the first cathode 105, and the second bias signal is applied between the second gate 111 and the second anode 106, to control the migration amount of the electron-type carrier and the hole-type carrier participating in the recombination light-emitting, and to control the light-emitting efficiency of the light-emitting functional layer 102.

[0051] Furthermore, based on the electron and hole mobility within the specific light-emitting functional layer 102, the driving method of the light-emitting device can be configured in the following two ways:

[0052] 1) The device structure is configured as follows:

[0053] like Figure 4 As shown, the intrinsic mobility of the electron carriers in the light-emitting functional layer 102 is less than the intrinsic mobility of the hole carriers in the light-emitting functional layer. The first gate 109 applies a negative phase potential relative to the first cathode 105 to increase the amount of electrons injected from the first cathode 105 into the light-emitting functional layer 102, and the second gate 111 applies a negative phase potential relative to the second anode 106 to reduce the amount of holes injected from the second anode 106 into the light-emitting functional layer 102. The intrinsic mobility refers to the electron mobility or hole mobility in the light-emitting functional layer 102 when the first bias signal and the second bias signal are not applied.

[0054] 2) The device structure is configured as follows:

[0055] The intrinsic mobility of the hole carriers in the light-emitting functional layer 102 is less than the intrinsic mobility of the electron carriers in the light-emitting functional layer. The first gate 109 applies a positive phase potential relative to the first cathode 105 to reduce the amount of electrons injected into the light-emitting functional layer 102 from the first cathode 105. The second gate 111 applies a positive phase potential relative to the second anode 106 to increase the amount of holes injected into the light-emitting functional layer 102 from the second anode 106. The intrinsic mobility refers to the electron mobility or hole mobility in the light-emitting functional layer 102 when the first bias signal and the second bias signal are not applied.

[0056] The two driving methods mentioned above are adaptive driving methods that take into account the intrinsic mobility of electrons and holes.

[0057] Furthermore, it is worth mentioning that in this embodiment, the light-emitting device can be an LED, an OLED, or a QLED; wherein, when the light-emitting device is an OLED, a first electron injection layer is further included between the first electron transport layer 103 and the first cathode 105, and a first hole injection layer is further included between the first hole transport layer 104 and the second anode 106.

[0058] In a second embodiment of the present invention, a display panel based on current gate light emission control is provided, the panel comprising:

[0059] A panel array of current regulated parallel gate light emitting device structures as units provided by the first embodiment of the present application.

[0060] The preferred embodiments of the present application have been described above with the preferred embodiments. It is understood that those of ordinary skill in the art can make modifications and variations without departing from the concept of the present application. Therefore, the technical solutions obtained by logical analysis, reasoning or limited experiments based on the prior art according to the concept of the present application should be within the protection scope defined by the claims.

Claims

1. A current-controlled parallel gate light-emitting device structure, characterized in that, The device structure includes: a substrate, a light-emitting functional layer disposed on the substrate, a first electron transport layer and a first hole transport layer disposed on the side of the light-emitting functional layer away from the substrate and arranged opposite each other, a first cathode disposed on the first electron transport layer, a second anode disposed on the first hole transport layer, and a current-controlled gate structure disposed on the first cathode and / or the second anode; the current-controlled gate includes a carrier transport layer and a gate electrode; wherein, when the gate electrode of the current-controlled gate structure is disposed as a first gate on the first cathode side, the carrier transport layer is a second electron transport layer, and when the gate electrode of the current-controlled gate structure is disposed as a second gate on the second anode side, the carrier transport layer is a second hole transport layer; A driving signal is applied between the first cathode and the second anode to cause electrons and holes to recombine and emit light within the light-emitting functional layer; a bias signal is applied between the gate electrode and the first cathode and / or the second anode to control the migration amount of electron or hole carriers participating in recombination and to control the luminous brightness and / or luminous efficiency of the light-emitting functional layer.

2. The current-controlled parallel gate light-emitting device structure as described in claim 1, characterized in that, A current-limiting resistor is also connected in series in the circuit loop formed by the current-regulating gate structure, the first cathode or the second anode, and the bias signal; the current-limiting resistor is deposited in the current-regulating gate structure or is independent of the current-regulating gate structure.

3. The current-controlled parallel gate light-emitting device structure as described in claim 1, characterized in that: If the current-regulating gate structure is disposed on the first cathode, a first bias signal is applied between the first gate and the first cathode; the first bias signal is configured to: when the first gate is applied with a negative phase potential relative to the first cathode to increase the amount of electron injection from the first cathode to the light-emitting functional layer, and when the first gate is applied with a positive phase potential relative to the first cathode to reduce the amount of electron injection from the first cathode to the light-emitting functional layer, so as to control the luminous brightness or luminous efficiency of electron-hole recombination in the light-emitting functional layer.

4. The current-controlled parallel gate light-emitting device structure as described in claim 1, characterized in that: If the current-regulating gate structure is disposed on the second anode, a second bias signal is applied between the second gate and the second anode; the second bias signal is configured to: when the second gate is applied with a positive phase potential relative to the second anode to increase the hole injection amount from the second anode to the light-emitting functional layer, and when the second gate is applied with a negative phase potential relative to the second anode to reduce the hole injection amount from the second anode to the light-emitting functional layer, so as to control the luminous brightness or luminous efficiency of electron-hole recombination in the light-emitting functional layer.

5. The current-controlled parallel gate light-emitting device structure as described in claim 3 or 4, characterized in that, When the intrinsic carrier concentration of the first carrier corresponding to the current-controlled gate structure in the light-emitting functional layer is less than the intrinsic carrier concentration of the relative carrier, the carrier injection amount of the first carrier is increased to improve the luminous brightness and luminous efficiency of electron-hole recombination in the light-emitting functional layer. When the intrinsic carrier concentration of the first carrier corresponding to the current-controlled gate structure in the light-emitting functional layer is greater than the intrinsic carrier concentration of the relative carrier, the carrier injection amount of the first carrier is increased to improve the luminescence brightness of electron-hole recombination in the light-emitting functional layer. Wherein, the first charge carrier is either the electron charge carrier or the hole charge carrier, and the relative charge carrier is either the relative hole charge carrier or the relative electron charge carrier.

6. The current-controlled parallel gate light-emitting device structure as described in claim 1, characterized in that, The current-regulating gate structure includes a first regulating gate structure disposed on the first cathode and a second regulating gate structure disposed on the second anode. The first regulating gate structure includes a second electron transport layer and a first gate stacked on the first cathode. The second regulating gate structure includes a second hole transport layer and a second gate stacked on the second anode. A first bias signal is applied between the first gate and the first cathode, and a second bias signal is applied between the second gate and the second anode, in order to control the migration of electron carriers and hole carriers participating in recombination luminescence, and to control the luminescence efficiency of the luminescent functional layer.

7. The current-modulated parallel gate light-emitting device structure as described in claim 6, characterized in that, The device structure is configured as follows: The intrinsic mobility of the electron carriers in the light-emitting functional layer is less than the intrinsic mobility of the hole carriers in the light-emitting functional layer. The first gate applies a negative phase potential relative to the first cathode to increase the amount of electrons injected from the first cathode into the light-emitting functional layer. The second gate applies a negative phase potential relative to the second anode to reduce the amount of holes injected from the second anode into the light-emitting functional layer. The intrinsic mobility refers to the electron mobility or hole mobility in the light-emitting functional layer when neither the first bias signal nor the second bias signal is applied.

8. The current-modulated parallel gate light-emitting device structure as described in claim 6, characterized in that, The device structure is configured as follows: The intrinsic mobility of the hole carriers in the light-emitting functional layer is less than that of the electron carriers in the light-emitting functional layer. The first gate is given a positive phase potential relative to the first cathode to reduce the amount of electrons injected from the first cathode into the light-emitting functional layer. The second gate is given a positive phase potential relative to the second anode to increase the amount of holes injected from the second anode into the light-emitting functional layer. The intrinsic mobility refers to the electron mobility or hole mobility in the light-emitting functional layer when neither the first bias signal nor the second bias signal is applied.

9. The current-controlled parallel gate light-emitting device structure as described in claim 1, characterized in that, The light-emitting device is an LED, OLED, or QLED; wherein, when the light-emitting device is an OLED, a first electron injection layer is further included between the first electron transport layer and the first cathode, and a first hole injection layer is further included between the first hole transport layer and the second anode.

10. A display panel based on current-grid light emission control, characterized in that, The panel includes: A panel array composed of a current-controlled parallel gate light-emitting device structure as described in any one of claims 1-9 as a unit.

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