Light-emitting substrate and display panel

Abstract

The invention discloses a light-emitting substrate and a display panel, and the light-emitting substrate comprises a substrate; the circuit structure layer is located on the substrate; the circuit structure layer comprises a photoelectric sensor; the light-emitting structure layer is located on the side, away from the substrate, of the circuit structure layer, and the orthographic projection of the light-emitting structure layer on the substrate and the orthographic projection of the photosensitive area of the photoelectric sensor on the substrate are not overlapped; the light blocking structure is located on the side, away from the substrate, of the photoelectric sensor, the orthographic projection of the light blocking structure on the substrate surrounds the orthographic projection of the light sensing area of the photoelectric sensor on the substrate, and the light blocking structure is used for blocking light emitted by the light emitting structure layer from entering the light sensing area of the photoelectric sensor; and the packaging layer covers the circuit structure layer, the light-emitting structure layer and the light blocking structure. The photoelectric sensor is not influenced by light emitted by the light-emitting substrate, so that the accuracy and the stability of ambient light brightness detection are improved.

Description

Technical Field

[0001] The present invention relates to the field of display technology, and in particular to a light-emitting substrate and a display panel. Background Art

[0002] A photoelectric sensor is a sensor that converts light signals into electrical signals based on the photoelectric effect. When the light intensity received by the photosensitive area of ​​the photoelectric sensor changes, the electrical signal output by the photoelectric sensor changes accordingly.

[0003] Photoelectric sensors are widely used in devices such as tablets, mobile phones, and laptops. By processing and analyzing the electrical signals output by the photoelectric sensors, the brightness information of the environment in which the display panel is located can be measured, so that the brightness of the display panel can be adjusted according to the ambient light brightness. Increasing the display brightness when the ambient light is brighter can ensure that the displayed content is clearly visible. Reducing the display brightness when the ambient light is darker can improve the user experience and extend the battery life of the device.

[0004] The accuracy and sensitivity of photoelectric sensors are affected by many factors. For example, temperature, light, and electrical signals may affect the accuracy of the photoelectric sensor's judgment of ambient light brightness, making it difficult for the screen brightness to adapt to actual needs. Summary of the Invention

[0005] The present invention provides a light-emitting substrate and a display panel, which are used to improve the accuracy of a photoelectric sensor in judging the brightness of ambient light.

[0006] In a first aspect, the present invention provides a light-emitting substrate, comprising:

[0007] substrate;

[0008] A circuit structure layer is located on the base substrate; the circuit structure layer includes a photoelectric sensor;

[0009] a light-emitting structure layer, located on a side of the circuit structure layer away from the base substrate, wherein an orthographic projection of the light-emitting structure layer on the base substrate and an orthographic projection of the photosensitive area of ​​the photoelectric sensor on the base substrate do not overlap with each other;

[0010] a light-blocking structure located on a side of the photosensor facing away from the base substrate, the orthographic projection of the light-blocking structure on the base substrate surrounding the orthographic projection of the photosensitive area of ​​the photosensor on the base substrate, and the light-blocking structure being used to block light emitted from the light-emitting structure layer from entering the photosensitive area of ​​the photosensor;

[0011] An encapsulation layer covers the circuit structure layer, the light-emitting structure layer and the light-blocking structure.

[0012] In some embodiments of the present invention, the light-blocking structure includes a plurality of film layers stacked in sequence, and the plurality of film layers stacked in sequence include a light-reflecting layer and / or a light-absorbing layer.

[0013] In some embodiments of the present invention, the light-emitting structure layer includes a first electrode layer, a pixel definition layer, a light-emitting layer, and a second electrode layer stacked in sequence in a direction away from the base substrate, and the top surfaces of the reflective layer and the light-absorbing layer are not lower than the top surface of the first electrode layer.

[0014] In some embodiments of the present invention, the first electrode layer is made of metal material, and the reflective layer and the first electrode layer are provided in the same layer.

[0015] In some embodiments of the present invention, the light-blocking structure further includes a light-transmitting layer, which covers the light-reflecting layer; the pixel definition layer is made of a light-transmitting material, and the light-transmitting layer and the pixel definition layer are arranged in the same layer.

[0016] In some embodiments of the present invention, the pixel definition layer is made of a light-absorbing material, and the light-absorbing layer and the pixel definition layer are provided in the same layer.

[0017] In some embodiments of the present invention, the light-blocking structure further includes at least one raised layer, which is located between the light-reflecting layer or the light-absorbing layer and the circuit structure layer, and is used to make the light-blocking structure have a set height.

[0018] In some embodiments of the present invention, the light-emitting substrate includes at least one flat layer, which is located between the circuit structure layer and the light-emitting structure layer. The at least one flat layer corresponds one-to-one to the at least one enhanced layer, and the enhanced layer is arranged on the same layer as the corresponding flat layer.

[0019] In some embodiments of the present invention, in a direction perpendicular to the base substrate and pointing from the base substrate to the light blocking structure, the cross-sectional area of ​​the light blocking structure gradually decreases.

[0020] In some embodiments of the present invention, the light-emitting substrate further includes a light-transmitting conductor layer, and the light-transmitting conductor layer is located on a side of the photosensitive area of ​​the photosensor facing away from the base substrate.

[0021] In some embodiments of the present invention, the orthographic projection of the light-transmitting conductor layer on the base substrate covers the orthographic projection of the photosensitive area of ​​the photosensor on the base substrate.

[0022] In some embodiments of the present invention, the photosensor includes a semiconductor layer, and a portion of the semiconductor layer serves as the photosensitive region;

[0023] The circuit structure layer includes a first active layer and a second active layer, wherein the second active layer is located on a side of the first active layer away from the base substrate; the semiconductor layer is arranged on the same layer as the first active layer, and the light-transmitting conductor layer is arranged on the same layer as the second active layer.

[0024] In some embodiments of the present invention, the first active layer and the semiconductor layer are made of polysilicon, and the second active layer and the light-transmitting conductor layer are made of indium gallium zinc oxide.

[0025] In a second aspect, the present invention further provides a display panel comprising any one of the light-emitting substrates in the first aspect, wherein the display panel has a display area and a non-display area surrounding the display area, the photoelectric sensor is located in the non-display area, or the display area has an opening area, and the photoelectric sensor is located in the opening area.

[0026] The beneficial effects of the present invention are as follows:

[0027] The present invention provides a light-emitting substrate and a display panel, wherein the light-emitting substrate includes: a base substrate; a circuit structure layer located on the base substrate; the circuit structure layer includes a photoelectric sensor; a light-emitting structure layer located on a side of the circuit structure layer facing away from the base substrate, wherein the orthographic projection of the light-emitting structure layer on the base substrate and the orthographic projection of the photosensitive area of ​​the photoelectric sensor on the base substrate do not overlap; a light-blocking structure located on a side of the photoelectric sensor facing away from the base substrate, wherein the orthographic projection of the light-blocking structure on the base substrate surrounds the orthographic projection of the photosensitive area of ​​the photoelectric sensor on the base substrate, and the light-blocking structure is used to block light emitted by the light-emitting structure layer from entering the photosensitive area of ​​the photoelectric sensor; and an encapsulation layer, wherein the encapsulation layer covers the circuit structure layer, the light-emitting structure layer, and the light-blocking structure. In the present invention, the light-blocking structure can block light emitted by the light-emitting structure layer, allowing only ambient light to enter the photosensitive area of ​​the photoelectric sensor, so that the photoelectric sensor is not affected by the light emitted by the light-emitting substrate itself, thereby improving the accuracy and stability of the ambient light brightness detection, and then adjusting the luminous brightness of the light-emitting substrate itself according to the brightness of the ambient light, adapting to environmental changes, and improving the user experience. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the following briefly introduces the drawings required for use in the embodiments of the present invention. Obviously, the drawings introduced below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0029] Figure 1 A schematic structural diagram of a light-emitting substrate provided in an embodiment of the present invention;

[0030] Figure 2A schematic diagram of the structure of a photoelectric sensor provided by an embodiment of the present invention;

[0031] Figure 3 Schematic diagram of the light path of the light-emitting substrate in the related art;

[0032] Figure 4 A schematic diagram of a light path in a light-emitting substrate provided by an embodiment of the present invention;

[0033] Figure 5 A schematic diagram of a manufacturing process of a light-emitting substrate provided by an embodiment of the present invention;

[0034] Figure 6 A schematic structural diagram of another light-emitting substrate provided by an embodiment of the present invention;

[0035] Figure 7 A schematic diagram of a manufacturing process of another light-emitting substrate provided by an embodiment of the present invention;

[0036] Figure 8 A schematic diagram of a partial structure of a light-emitting substrate provided by an embodiment of the present invention;

[0037] Figure 9 A schematic diagram of the overall structure of a photoelectric sensor provided by an embodiment of the present invention;

[0038] Figure 10 A schematic structural diagram of a display panel provided by an embodiment of the present invention;

[0039] Description of reference numerals:

[0040] 1-substrate, 2-circuit structure layer, 21-photoelectric sensor, 211-semiconductor layer, 212-pin, G-photosensitive area, 3-light-emitting structure layer, 31-first electrode layer, 32-pixel definition layer, 33-light-emitting layer, 34-second electrode layer, 4-packaging layer, 5-light-blocking structure, 51-reflective layer, 52-light-absorbing layer, 53-light-transmitting layer, 54-increased layer, 541-first increased layer, 542-second increased layer, 6-flat layer, 61-first flat layer, 62-second flat layer, 7-light-transmitting conductor layer, 8-wire, AA-display area, AA'-non-display area, K-opening area. DETAILED DESCRIPTION

[0041] In order to make the above-mentioned objects, features and advantages of the present invention more obvious and easy to understand, the present invention will be further described below with reference to the accompanying drawings and examples. However, the example embodiments can be implemented in various forms and should not be understood as being limited to the embodiments described herein; on the contrary, these embodiments are provided to make the present invention more comprehensive and complete, and to fully convey the concepts of the example embodiments to those skilled in the art. The same figure marks in the figures represent the same or similar structural layers, and their repeated descriptions will be omitted. The words expressing position and direction described in the present invention are all explained with reference to the accompanying drawings as examples, but changes can be made as needed, and all changes are included in the scope of protection of the present invention. The drawings of the present invention are only used to illustrate the relative position relationship and do not represent the true proportions.

[0042] Figure 1 This is a schematic diagram of the structure of the light-emitting substrate provided by an embodiment of the present invention. Figure 1 As shown, the light-emitting substrate includes a base substrate 1 , a circuit structure layer 2 , a light-emitting structure layer 3 , an encapsulation layer 4 and a light-blocking structure 5 .

[0043] The circuit structure layer 2 is located on the base substrate 1 and includes a photosensor 21. The photosensor 21 can be a sensor including, but not limited to, a photodiode, a phototransistor, a photomultiplier tube, and the like. Photodiodes offer advantages such as simple structure, high sensitivity, fast response, and good reliability, and are used as an example in the present invention. The circuit structure layer 2 also includes a control circuit, which is connected to the light-emitting structure layer 3 and the photosensor 21. This control circuit is used to control the light-emitting state of the light-emitting structure layer 3 and establish a signal transmission channel between the light-emitting structure layer 3 and the photosensor 21.

[0044] Figure 2 This is a schematic structural diagram of a photoelectric sensor provided by an embodiment of the present invention.

[0045] like Figure 2 As shown, in the embodiment of the present invention, a photodiode is used as the photoelectric sensor 21. The photodiode includes a semiconductor layer 211 and a pin 212 connected to the semiconductor layer 211. By doping different impurities in different regions of the semiconductor layer 211, a P-type semiconductor and an N-type semiconductor can be formed. The P-type semiconductor has more holes, and the N-type semiconductor has more electrons. When power is applied to the pin 212, the holes in the P-type semiconductor diffuse into the N-type semiconductor, and the electrons in the N-type semiconductor diffuse into the P-type semiconductor, forming a space charge region at the interface between the two, namely, a PN junction.

[0046] Photodiodes work based on the photoelectric effect. When light shines on the PN junction of the photodiode, the photon energy is absorbed and stimulates the generation of electron-hole pairs. Under the action of the voltage applied to pin 212, a current is generated. The magnitude of the current is proportional to the light intensity received by the photodiode. Therefore, by measuring the magnitude of the current, the light intensity received by the photodiode can be calculated.

[0047] It is understood that the PN junction of the photodiode is the region where the photodiode can effectively sense light (hereinafter referred to as the photosensitive region G), that is, a portion of the semiconductor layer 211 serves as the photosensitive region G. To facilitate receiving light, only light-transmitting structures are disposed directly above the photosensitive region G. That is, the orthographic projections of the opaque traces and electrodes (including the pins 212) in the circuit structure layer 2 on the base substrate 1 do not overlap with the orthographic projections of the photosensitive region G of the photodiode on the base substrate 1.

[0048] Based on the above structure and working principle, the pin 212 of the photoelectric sensor 21 exposes the photosensitive area G, and the ambient light can be transmitted to the photosensitive area G through the film layer above the photosensitive area G. The photosensitive area G converts the light signal into an electrical signal and transmits it to the control circuit through the pin 212 for analysis and processing to obtain the brightness information of the ambient light. The control circuit transmits a control signal to the light-emitting structure layer 3 according to the brightness information of the ambient light, and adjusts the light output brightness of the light-emitting structure layer 3 to adapt it to the brightness of the ambient light.

[0049] like Figure 1 As shown, the light-emitting structure layer 3 is located on the side of the circuit structure layer 2 away from the base substrate 1. In order to avoid blocking the photosensitive area G of the photosensor 21, the orthographic projection of the light-emitting structure layer 3 on the base substrate 1 and the orthographic projection of the photosensitive area G of the photosensor 21 on the base substrate 1 do not overlap with each other.

[0050] The light-emitting structure layer 3 includes a first electrode layer 31, a pixel definition layer 32 (Pixel Definition Layer, referred to as pixel definition layer 32), a light-emitting layer 33, and a second electrode layer 34, which are stacked in a direction away from the base substrate 1. The light-emitting layer 33 includes an organic light-emitting material. The control circuit transmits an electrical signal to the first electrode layer 31 and the second electrode layer 34, and a voltage is applied between the first electrode layer 31 and the second electrode layer 34, which can cause the light-emitting layer 33 to emit light.

[0051] Figure 3 Schematic diagram of the light path of the light-emitting substrate in the related art.

[0052] Figure 3 The diagram shows the light that may be incident on the photosensitive area G of the photoelectric sensor 21 when no light blocking structure 5 is provided above the photoelectric sensor 21 in the related art. Figure 3As shown, when the light-blocking structure 5 is not provided above the photoelectric sensor 21, theoretically, the light incident angle of the photoelectric sensor 21 can reach 180°. The light emitted from the light-emitting layer 33 passes through the second electrode layer 34 and the packaging layer 4 in sequence and then is emitted into the air. Since the refractive index of the packaging layer 4 is usually greater than the refractive index of the air, at the interface between the packaging layer 4 and the air, part of the light emitted from the light-emitting layer 33 meets the critical condition of total reflection and will be reflected in the direction of the photoelectric sensor 21 and incident on the photosensitive area G of the photoelectric sensor 21. The light received by the photosensitive area G includes both ambient light and light emitted from the light-emitting layer 33, resulting in the measured ambient light intensity being greater than the actual ambient light intensity. The luminous brightness adjusted according to the measurement result cannot meet the demand well.

[0053] Depend on Figure 3 It can be seen that the light emitted from the light emitting structure layer 3 is reflected by the packaging layer 4 and then incident obliquely from the upper side of the photoelectric sensor 21 to the photosensitive area G. Figure 1 In an embodiment of the present invention, a light-blocking structure 5 is provided on the side of the photoelectric sensor 21 facing away from the base substrate 1, and the encapsulation layer 4 covers the circuit structure layer 2, the light-emitting structure layer 3 and the light-blocking structure 5. The orthographic projection of the light-blocking structure 5 on the base substrate 1 surrounds the orthographic projection of the photosensitive area G of the photoelectric sensor 21 on the base substrate 1, so that the light-blocking structure 5 can not only block the light emitted by the light-emitting structure layer 3 from entering the photosensitive area G of the photoelectric sensor 21, thereby avoiding that the light intensity received by the photosensitive area G is too high, but also allow the ambient light to be incident on the photosensitive area G from directly above the photoelectric sensor 21 without being blocked, thereby ensuring the accuracy of the detection result.

[0054] Specifically, the light-blocking structure 5 can block the light emitted from the light-emitting structure layer 3 by reflecting or absorbing light. The reflective layer 51 / light-absorbing layer 52 can be located on the side of the light-blocking structure 5 closest to the encapsulation layer 4, or a light-transmitting film layer can be provided between the reflective layer 51 / light-absorbing layer 52 and the encapsulation layer 4.

[0055] In addition, if Figure 1 As shown, the cross-sectional area of ​​the light-blocking structure 5 gradually decreases in a direction perpendicular to the base substrate 1 and directed from the base substrate 1 toward the light-blocking structure 5, so that the surface of the light-blocking structure 5 on the side close to the light-emitting structure layer 3 is an inclined surface, which allows more light to be incident on the surface of the light-blocking structure 5 and reflected by the light-reflecting layer 51 or absorbed by the light-absorbing layer 52. To prevent light emitted from the light-emitting structure layer 3 from passing over the light-blocking structure 5 and incident on the photosensitive area G of the photosensor 21, the light-blocking structure 5 also needs to have a sufficient height. For example, the top surfaces of the light-reflecting layer 51 and the light-absorbing layer 52 are not lower than the top surface of the first electrode layer 31.

[0056] Several possible light-blocking structures 5 are described in detail below.

[0057] Figure 4 A schematic diagram of a light path in a light-emitting substrate provided by an embodiment of the present invention.

[0058] like Figure 4 As shown, in an embodiment of the present invention, the light-blocking structure 5 may include a plurality of film layers stacked in sequence. The light emitted from the light-emitting structure layer 3 is incident on the reflective layer 51 and can be reflected by the reflective layer 51 toward the side where the light-emitting structure layer 3 is located, thereby preventing the light emitted from the light-emitting structure layer 3 from entering the photosensitive area G of the photoelectric sensor 21.

[0059] Since the first electrode layer 31 in the light-emitting structure layer 3 is usually made of metal material, and metal material has a high reflectivity to light, the reflective layer 51 in the embodiment of the present invention can be provided on the same layer as the first electrode layer 31, and the two are made through a single patterning process. Therefore, the preparation of the reflective layer 51 can be compatible with the existing process flow of the light-emitting substrate, which is beneficial to saving production costs.

[0060] The light-blocking structure 5 may further include a light-transmitting layer 53, which covers the light-reflecting layer 51. The light-transmitting layer 53 is made of a light-transmitting material, so that light emitted from the light-emitting structure layer 3 can pass through the light-transmitting layer 53 and enter the light-reflecting layer 51, and be reflected by the light-reflecting layer 51. In an embodiment of the present invention, the pixel definition layer 32 in the light-emitting structure layer 3 can be made of a light-transmitting material. Then, the light-transmitting layer 53 and the pixel definition layer 32 can be provided on the same layer and both can be manufactured through a single patterning process. Therefore, the preparation of the light-transmitting layer 53 is compatible with the existing process flow of the light-emitting substrate, further saving production costs.

[0061] like Figure 4 As shown, the light-blocking structure 5 further includes at least one raised layer 54, which is located between the light-reflecting layer 51 and the circuit structure layer 2. The at least one raised layer 54 can be used to ensure that the light-blocking structure 5 has a set height, thereby blocking as much light as possible emitted by the light-emitting structure layer 3 and preventing it from entering the photosensitive area G of the photosensor 21. Exemplarily, the at least one raised layer 54 includes a first raised layer 541 and a second raised layer 542, and the second raised layer 542 covers the first raised layer 541.

[0062] The light-emitting substrate includes at least one flat layer 6, located between the circuit structure layer 2 and the light-emitting structure layer 3. The at least one flat layer 6 corresponds one-to-one with the at least one raised layer 54, and the raised layer 54 is disposed on the same layer as the corresponding flat layer 6. Each raised layer 54 is disposed on the same layer as its corresponding flat layer 6, making the preparation of the raised layer 54 compatible with existing light-emitting substrate process flows, further reducing production costs. Exemplarily, the at least one flat layer 6 may include a first flat layer 61 and a second flat layer 62, with the second flat layer 62 covering the first flat layer 61. The first flat layer 61 is disposed on the same layer as the first raised layer 541, and the second flat layer 62 is disposed on the same layer as the second raised layer 542.

[0063] Figure 5 A schematic diagram of the manufacturing process of a light-emitting substrate provided by an embodiment of the present invention.

[0064] Figure 5 Shown Figure 4 The production process of the light-emitting substrate shown in FIG. Figure 5 As shown, the production process of the light-emitting substrate is as follows:

[0065] Step S1: Form a circuit structure layer 2 on a base substrate 1. The base substrate 1 may be a glass substrate or a silicon substrate, but is not limited thereto. Forming the circuit structure layer 2 includes forming a control circuit and a photoelectric sensor 21. The control circuit may be a thin film transistor (TFT) control circuit, but is not limited thereto. The embodiment of the present invention is described using a low temperature polysilicon thin film transistor (LTPS TFT) control circuit as an example. The semiconductor layer used for photosensitivity in the photoelectric sensor 21 may be provided on the same layer as the active layer of the LTPS TFT, and the two are formed through a single patterning process. The material of the active layer is polysilicon. The pins 212 of the photoelectric sensor 21 may be provided on the same layer as the source / drain of the control circuit, and the two are formed through a single patterning process. Forming the control circuit includes forming multiple conductive layers and dielectric layers between the conductive layers using a semiconductor process. The pattern and arrangement of each film layer are designed according to product requirements, and are not limited in the embodiment of the present invention.

[0066] Step S2: Form at least one planar layer 6 on the circuit structure layer 2. The material of the planar layer 6 can be, for example, silicon dioxide or polyimide (PI), which is deposited on the surface of the circuit structure layer 2 by a chemical vapor deposition (CVD) process, and then formed into the desired planar layer pattern by a photolithography process. The number of planar layers 6 can be set according to product requirements and is not limited in this embodiment of the present invention.

[0067] Exemplarily, forming at least one flat layer 6 on the circuit structure layer 2 includes forming a first flat layer 61 and a second flat layer 62 on the circuit structure layer 2. By adaptively designing the mask used in the photolithography process, the pattern of the first flat layer 61 can be formed while the pattern of the first raised layer 54 is formed, and the pattern of the second flat layer 62 can be formed while the pattern of the second raised layer 54 is formed.

[0068] Step S3: forming a light emitting structure layer 3 on the planar layer 6. Forming the light emitting structure layer 3 includes sequentially forming a first electrode layer 31, a pixel definition layer 32, a light emitting layer 33 and a second electrode layer 34.

[0069] Among them, the first electrode layer 31 can use a metal material, such as silver (Ag), aluminum (Al), titanium (Ti), etc., and the metal material is covered on the flat layer 6 by a deposition or sputtering process, and then the pattern required for the first electrode layer 31 is formed by a photolithography process. By adaptively designing the mask plate used in the photolithography process, the pattern of the reflective layer 51 can be formed at the same time as the first electrode layer 31 is formed.

[0070] The material of the pixel definition layer 32 can be a light-transmitting photoresist, which is coated on the flat layer 6 and then formed into the desired pattern through a photolithography process. The pixel definition layer 32 has multiple openings for accommodating the light-emitting material, so that multiple discrete pixels can be formed in the light-emitting layer 33. By adaptively designing the mask used in the photolithography process, the pattern of the light-transmitting layer 53 can be formed simultaneously with the formation of the pixel definition layer 32. In some embodiments of the present invention, the above steps can also be omitted, that is, the mask used for the pixel definition layer 32 remains unchanged, and the light-transmitting layer 53 is not provided on the light-blocking structure 5, thereby saving costs and simplifying the process.

[0071] The light-emitting layer 33 can be made of an organic light-emitting material and formed in the openings of the pixel definition layer 32 through an evaporation process. The second electrode layer 34 can be made of a transparent conductive material, such as indium tin oxide (ITO), and is deposited on the pixel definition layer 32 and the light-emitting layer 33 through physical vapor deposition or chemical vapor deposition. The pattern of the second electrode layer 34 is then formed through a photolithography process.

[0072] Step S4: forming an encapsulation layer 4. The encapsulation layer 4 can be made of a transparent organic material and covered on the circuit structure layer 2, the light emitting structure layer 3 and the light blocking structure 5 by physical vapor deposition (PVD) or chemical vapor deposition.

[0073] Figure 6 This is a structural schematic diagram of another light-emitting substrate provided by an embodiment of the present invention.

[0074] like Figure 6 As shown, the embodiment of the present invention is Figure 4 The difference between the illustrated embodiments is that the light-blocking structure 5 includes a raised layer 51 and a light-absorbing layer 52. The light-absorbing layer 52 uses a dark-colored light-absorbing material to absorb the light emitted by the light-emitting structure layer 3 to prevent it from entering the photosensitive area G of the photoelectric sensor 21. In addition, the light-blocking structure 5 has fewer film layers and a simpler structure.

[0075] In the embodiment of the present invention, the pixel definition layer 32 is made of light absorbing material, and the light absorbing layer 52 is provided on the same layer as the pixel definition layer 32 . Thus, the preparation of the light absorbing layer 52 is compatible with the existing process flow of the light emitting substrate, saving production costs.

[0076] Figure 7 A schematic diagram of the manufacturing process of another light-emitting substrate provided by an embodiment of the present invention.

[0077] Figure 7 Shown Figure 6 The production process of the light-emitting substrate shown in FIG. Figure 5 The difference in the production process shown is that: when forming the first electrode layer 31 in step S3, the mask plate used for the first electrode layer 31 can be unchanged, and the material of the pixel definition layer 32 can adopt a light-absorbing dark photoresist, such as black photoresist. By adaptively designing the mask plate used in the photolithography process, the pattern of the light-absorbing layer 52 can be formed while forming the pixel definition layer 32.

[0078] Figure 4 and Figure 6 In the embodiment shown, each film layer of the light-blocking structure 5 can be produced simultaneously with the corresponding film layer in the light-emitting substrate. There is no need to change the process flow of the mature light-emitting substrate. Only the pattern of the mask plate needs to be changed. It has the advantages of low cost and good reliability, which is conducive to mass production.

[0079] In some other embodiments of the present invention, a light-blocking structure 5 can be separately manufactured after forming the circuit structure layer 2, the flat layer 6 and the light-emitting structure layer 3 and before forming the encapsulation layer 4. The light-blocking structure 5 can be directly manufactured using reflective materials or light-absorbing materials and can be manufactured through one-time patterning, that is, a new step is added to the existing process flow of the light-emitting substrate and a new mask plate is required. However, the pattern of the mask plate is simple and the cost can still be kept low.

[0080] In the above embodiments, by arranging a light-blocking structure 5 above the photoelectric sensor 21, the influence of the light emitted by the light-emitting structure layer 3 inside the light-emitting substrate on the detection accuracy of the photoelectric sensor 21 can be avoided. During actual use, the external environment may also affect the detection accuracy of the photoelectric sensor 21. For example, when there is a large electric field in the external environment, it may weaken the electric field formed by the photoelectric sensor 21 itself, resulting in a decrease in photocurrent, affecting the performance of the photoelectric sensor 21, and even causing the photoelectric sensor 21 to fail to work normally. In view of this, the following embodiments provide a light-emitting substrate that can avoid the adverse effects of external electric fields on the performance of the photoelectric sensor 21.

[0081] Figure 8 The schematic diagram of the partial structure of a light-emitting substrate provided by an embodiment of the present invention shows the structure of the photoelectric sensor. Figure 8 As shown, in the embodiment of the present invention, the light-emitting substrate further includes a light-transmitting conductor layer 7 , which is located on the side of the photosensitive region G of the photosensor 21 away from the base substrate 1 .

[0082] Figure 9 FIG1 is a schematic diagram of the overall structure of a photoelectric sensor provided by an embodiment of the present invention, which also shows a light-transmitting conductor layer 7 and a wire 8 connected thereto. Figure 8 and Figure 9 As shown, the light-transmitting conductor layer 7 can be connected to the control circuit via a wire 8, thereby applying a stable voltage to the light-transmitting conductor layer 7. Because the conductor contains a large number of freely mobile electrons, when a voltage is applied to the light-transmitting conductor layer 7, the free electrons in the light-transmitting conductor layer 7 are redistributed under the action of the electric field, generating an electric field in the light-transmitting conductor layer 7 in the opposite direction to the external electric field. This electric field cancels out the external electric field, thereby preventing the external electric field from affecting the photosensor 21 and improving the accuracy of the photosensor 21 in detecting ambient light. As a result, the light-emitting substrate can adapt to more diverse environments and has better reliability.

[0083] like Figure 8 and Figure 9As shown, the orthographic projection of the transparent conductor layer 7 on the substrate should cover the orthographic projection of the photosensitive area G of the photosensor 21 on the substrate to avoid affecting the efficiency of generating photocurrent in the PN junction, so that the photosensor 21 can work normally without being affected by the external electric field.

[0084] In an embodiment of the present invention, the circuit structure layer 2 may include a first active layer and a second active layer, the second active layer being located on the side of the first active layer facing away from the base substrate 1, wherein the semiconductor layer 211 is arranged on the same layer as the first active layer, and the two are formed through a single patterning process, and the light-transmitting conductor layer 7 is arranged on the same layer as the second active layer, and the two are formed through a single patterning process, so that the preparation of the semiconductor layer 211 and the light-transmitting conductor layer 7 can be compatible with the existing manufacturing process flow of the light-emitting substrate, and only the pattern of the mask plate needs to be changed, which is beneficial to saving production costs.

[0085] Exemplarily, the control circuit in the circuit structure layer 2 can be a low-temperature polycrystalline oxide (LTPO) control circuit, and the LTPO control circuit can include a low-temperature polycrystalline silicon thin film transistor (LTPS TFT) and an oxide thin film transistor (Oxide Thin Film Transistor, Oxide TFT for short), wherein the LTPS TFT includes a first active layer, the material of the first active layer is polycrystalline silicon, and accordingly, the material of the semiconductor layer 211 is also polycrystalline silicon, and the Oxide TFT includes a second active layer, the material of the second active layer is indium gallium zinc oxide (IGZO), and accordingly, the material of the transparent conductor layer 7 is also indium gallium zinc oxide (IGZO).

[0086] In actual production, the transparent conductor layer 7 can also be made of other transparent conductive materials, such as indium tin oxide (ITO), and can also be formed on the same layer as other film layers in the circuit structure layer 2. This is not limited to this embodiment of the present invention. The wire 8 can be provided on the same layer as the source / drain of the control circuit, but is not limited to this.

[0087] Figure 10 A schematic structural diagram of a display panel provided by an embodiment of the present invention.

[0088] The light-emitting substrate is the main component of the display panel. Based on the same inventive concept, an embodiment of the present invention also provides a display panel, which includes the light-emitting substrate in any of the above embodiments. The display panel also includes other components such as a flexible circuit board and a cover plate, which are not limited in the embodiment of the present invention.

[0089] Figure 10Several possible positions of the photoelectric sensor 21 in the display panel are shown, such as Figure 10 As shown, the display panel has a display area AA and a non-display area AA' surrounding the display area AA. The photosensor 21 can be set in both the display area AA and the non-display area AA'. In order to allow as much ambient light as possible to enter the photosensitive area of ​​the photosensor 21, no other structure is set directly above the photosensitive area or only a transparent film layer is set.

[0090] In one possible embodiment, the photosensor 21 can be located in the non-display area AA', that is, in an area near the frame of the display panel where no light-emitting structure is provided. In another possible embodiment, the display panel has an aperture area K, and the photosensor 21 is located within the aperture area K, with no obstruction directly above the photosensor 21. In another possible embodiment, the light-emitting structure within the display area AA adopts a pixelated design with spaces between the light-emitting pixels, and the photosensor 21 can be located in the spaces between the light-emitting pixels.

[0091] Although the preferred embodiments of the present invention have been described, those skilled in the art may make additional changes and modifications to these embodiments once they have learned the basic creative concept. Therefore, the appended claims are intended to be interpreted as including the preferred embodiments and all changes and modifications that fall within the scope of the present invention.

[0092] Obviously, those skilled in the art may make various changes and modifications to the present invention without departing from the spirit and scope of the present invention. Thus, if such changes and modifications fall within the scope of the claims and their equivalents, the present invention is intended to include such changes and modifications.

Claims

1. A light-emitting substrate, characterized in that: include: substrate substrate; A circuit structure layer, located on the base substrate; The circuit structure layer includes a photoelectric sensor; A light-emitting structure layer is located on a side of the circuit structure layer away from the base substrate, and an orthographic projection of the light-emitting structure layer on the base substrate and an orthographic projection of the photosensitive area of ​​the photoelectric sensor on the base substrate do not overlap each other; a light-blocking structure, located on a side of the photoelectric sensor away from the base substrate, the orthographic projection of the light-blocking structure on the base substrate surrounds the orthographic projection of the photosensitive area of ​​the photoelectric sensor on the base substrate, and the light-blocking structure is used to block the light emitted by the light-emitting structure layer from entering the photosensitive area of ​​the photoelectric sensor; An encapsulation layer covers the circuit structure layer, the light-emitting structure layer and the light-blocking structure.

2. The light-emitting substrate according to claim 1, wherein: The light blocking structure includes a plurality of film layers stacked in sequence, and the plurality of film layers stacked in sequence include a light reflecting layer and / or a light absorbing layer.

3. The light-emitting substrate according to claim 2, characterized in that: The light emitting structure layer comprises a first electrode layer, a pixel definition layer, a light emitting layer and a second electrode layer which are sequentially stacked in a direction away from the base substrate, and the top surfaces of the light reflecting layer and the light absorbing layer are not lower than the top surface of the first electrode layer.

4. The light-emitting substrate according to claim 3, characterized in that: The first electrode layer is made of metal material, and the reflective layer and the first electrode layer are arranged on the same layer.

5. The light-emitting substrate according to claim 4, characterized in that: The light blocking structure further includes a light-transmitting layer, and the light-transmitting layer covers the light-reflecting layer; the pixel definition layer is made of a light-transmitting material, and the light-transmitting layer and the pixel definition layer are arranged in the same layer.

6. The light-emitting substrate according to claim 3, characterized in that: The pixel definition layer is made of light absorbing material, and the light absorbing layer is arranged on the same layer as the pixel definition layer.

7. The light-emitting substrate according to any one of claims 3 to 6, characterized in that: The light-blocking structure further comprises at least one raised layer, and the at least one raised layer is located between the light-reflecting layer or the light-absorbing layer and the circuit structure layer, and the at least one raised layer is used to make the light-blocking structure have a set height.

8. The light-emitting substrate according to claim 7, wherein: The light-emitting substrate includes at least one flat layer, the at least one flat layer is located between the circuit structure layer and the light-emitting structure layer, the at least one flat layer corresponds to the at least one enhanced layer one by one, and the enhanced layer is arranged in the same layer as the corresponding flat layer.

9. The light-emitting substrate according to claim 1, wherein: In a direction perpendicular to the substrate and pointing from the substrate to the light blocking structure, the cross-sectional area of ​​the light blocking structure gradually decreases.

10. The light emitting substrate according to any one of claims 1 to 6, characterized in that: The light emitting substrate further comprises a light-transmitting conductor layer, and the light-transmitting conductor layer is located on a side of the photosensitive area of ​​the photoelectric sensor away from the base substrate.

11. The light emitting substrate according to claim 10, wherein: The orthographic projection of the light-transmitting conductor layer on the base substrate covers the orthographic projection of the light-sensing area of ​​the photosensor on the base substrate.

12. The light emitting substrate according to claim 10, wherein: The photoelectric sensor comprises a semiconductor layer, a partial area of ​​the semiconductor layer serving as the photosensitive area; The circuit structure layer includes a first active layer and a second active layer, wherein the second active layer is located on a side of the first active layer away from the substrate; The semiconductor layer is disposed in the same layer as the first active layer, and the light-transmitting conductor layer is disposed in the same layer as the second active layer.

13. The light emitting substrate according to claim 12, wherein: The first active layer and the semiconductor layer are made of polysilicon, and the second active layer and the light-transmitting conductor layer are made of indium gallium zinc oxide.

14. A display panel, characterized in that: It comprises the light-emitting substrate as described in any one of claims 1 to 13, the display panel has a display area and a non-display area surrounding the display area, the photoelectric sensor is located in the non-display area, or the display area has an opening area, and the photoelectric sensor is located in the opening area.

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