Substrate with built-in capacitor

Abstract

A substrate (1) with a built-in capacitor is provided with: a core substrate (100) provided with an opening (130) in the thickness direction (T); a capacitor component (200) provided in the opening (130) of the core substrate (100); and a sealing material (300) that seals the core substrate (100) and the capacitor member (200), the core substrate (100) having a base material (110) provided with an opening (130), the capacitor member (200) having: a capacitor body (210) having an anode layer (220) having a core part (221), a dielectric layer (230), and a cathode layer (240) facing the anode layer (220) with the dielectric layer (230) interposed therebetween in the thickness direction (T); a through conductor (260A (260B)) provided on at least an inner wall surface of a through hole (261A (261B)) penetrating at least the capacitor body (210) in the thickness direction (T); and conductor wiring layers (270A (270B)) provided on both end portions of the through conductors (260A (260B)) facing each other in the thickness direction (T), the sealing material (300) having, in the thickness direction (T): a first sealing portion (310) that covers one surface of each of the core substrate (100) and the capacitor member (200), and a second sealing portion (310) that covers one surface of each of the through conductors (260A (260B)); and a second sealing part (320) that covers the other surfaces of the core substrate (100) and the capacitor component (200), one surface of the core substrate (100) and one surface of the capacitor component (200) are present on the same plane, and the diameter R1a (R1b) of the end of the through hole (261A (261B) on the first sealing part (310) side is larger than the diameter R2a (R2b) of the end of the through hole (261A (261B) on the second sealing part (320) side.

Description

Technical Field

[0001] The present invention relates to a capacitor built-in substrate. Background Art

[0002] Patent document 1 discloses a wiring board, which includes: a core substrate, which is made of an insulating material; and a first insulating layer, which is stacked on the first main surface side of the above-mentioned core substrate and the second main surface side on the side opposite to the above-mentioned first main surface. A cavity is formed in the above-mentioned core substrate for arranging a via conductor structure, and the via conductor structure has a second substrate and a first through-hole conductor formed through the above-mentioned second substrate. In the above-mentioned core substrate, a second through-hole conductor is formed in the area outside the above-mentioned cavity and passes through the above-mentioned core substrate and the above-mentioned first insulating layer. The wiring density of the above-mentioned first through-hole conductor is greater than the wiring density of the above-mentioned second through-hole conductor.

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Patent Application Publication No. 2014-165218 Summary of the invention

[0006] Problem that the invention aims to solve

[0007] In Patent Document 1 Figure 1 In the wiring board described in Patent Document 1, a via conductor structure having a second base material and a first through-hole conductor is provided in a cavity of a core substrate and sealed by an insulating layer. Figure 1 B, etc., as a pre-stage for producing a state in which a via conductor structure is provided in a cavity of a core substrate, the via conductor structure is placed on a support plate as shown in FIG. 6A of Patent Document 1. However, in the method described in FIG. 6A of Patent Document 1, etc., there is a possibility that the conductor portion of the first through-hole conductor, particularly the end portion of the first through-hole conductor located on the support plate side, is damaged due to the pressure when the via conductor structure is placed on the support plate.

[0008] In this regard, in Patent Document 1 Figure 1 In the wiring board described in Patent Document 1, it is considered to disperse the pressure applied to the first through-hole conductor from the support plate by increasing the diameter of the first through-hole conductor. Figure 1 In the via conductor structure of the wiring board described in B, if the diameter of the first through-hole conductor is increased as a whole, the area of ​​the second substrate is reduced as a whole. In this case, if the via conductor structure is a capacitor component, the area of ​​the portion that can exhibit electrostatic capacitance in the second substrate is reduced as a whole, so the electrostatic capacitance of the capacitor component may be reduced.

[0009] The present invention has been made to solve the above-mentioned problems, and an object of the present invention is to provide a capacitor-embedded substrate capable of simultaneously suppressing damage to a through conductor and a conductor wiring layer provided at an end thereof and a decrease in electrostatic capacitance.

[0010] Solutions for solving problems

[0011] The built-in capacitor substrate of the present invention is characterized in that the built-in capacitor substrate includes: a core substrate having an opening in the thickness direction; a capacitor component arranged in the opening of the core substrate; and a sealant that seals the core substrate and the capacitor component, wherein the core substrate has a base material having the opening, and the capacitor component has: a capacitor body having an anode layer, a dielectric layer and a cathode layer, wherein the anode layer has a core portion, and the cathode layer is opposite to the anode layer in the thickness direction with the dielectric layer therebetween; a through conductor arranged at least through the capacitor in the thickness direction. At least the inner wall surface of the through hole of the main body; and a conductor wiring layer, which is arranged on the two opposite ends of the through conductor in the thickness direction, the sealing member has in the thickness direction: a first sealing portion, which covers one surface of each of the core substrate and the capacitor component; and a second sealing portion, which covers the other surface of each of the core substrate and the capacitor component, the one surface of the core substrate and the one surface of the capacitor component exist on the same plane, and the diameter of the end of the through hole on the first sealing portion side is larger than the diameter of the end of the through hole on the second sealing portion side.

[0012] Effects of the Invention

[0013] According to the present invention, it is possible to provide a substrate with built-in capacitors capable of simultaneously suppressing damage to a through conductor and a conductor wiring layer provided at an end portion thereof and a decrease in electrostatic capacitance. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] Figure 1 FIG. 1 is a schematic cross-sectional view showing an example of a capacitor-embedded substrate according to Embodiment 1 of the present invention.

[0015] Figure 2 It is a schematic cross-sectional view showing an example of a capacitor-embedded substrate according to a second embodiment of the present invention.

[0016] Figure 3 FIG. 1 is a schematic cross-sectional view showing an example of a capacitor-embedded substrate according to a modification of the second embodiment of the present invention.

[0017] Figure 4 FIG. 1 is a schematic cross-sectional view showing an example of a capacitor-embedded substrate according to a third embodiment of the present invention.

[0018] Figure 5FIG. 1 is a schematic cross-sectional view showing an example of a capacitor-embedded substrate according to a fourth embodiment of the present invention. DETAILED DESCRIPTION

[0019] The following is an explanation of the capacitor built-in substrate of the present invention. In addition, the present invention is not limited to the following structure, and can be appropriately changed within the scope of the present invention. In addition, a structure formed by combining multiple preferred structures described below is also the present invention.

[0020] The embodiments shown below are examples, and it is self-evident that partial substitution or combination of the structures shown in different embodiments can be performed. After the second embodiment, the description of matters common to the first embodiment is omitted, and the differences are mainly described. In particular, the same effects achieved by the same structure are not mentioned one by one for each embodiment.

[0021] In the following description, when the embodiments are not particularly distinguished, they are simply referred to as "capacitor-embedded substrate of the present invention."

[0022] The drawings shown below are schematic diagrams, and their dimensions, aspect ratios, and other aspects may differ from those of actual products.

[0023] In this specification, unless otherwise specified, terms indicating the relationship between elements (for example, "vertical", "parallel", etc.) and terms indicating the shape of an element mean not only the strict forms according to the literal meaning, but also mean substantially the same range, for example, a range including a difference of several percentage points.

[0024] The built-in capacitor substrate of the present invention is characterized in that the built-in capacitor substrate includes: a core substrate having an opening in the thickness direction; a capacitor component arranged in the opening of the core substrate; and a sealant that seals the core substrate and the capacitor component, wherein the core substrate has a base material having the opening, and the capacitor component has: a capacitor body having an anode layer, a dielectric layer and a cathode layer, wherein the anode layer has a core portion, and the cathode layer is opposite to the anode layer in the thickness direction with the dielectric layer therebetween; a through conductor arranged at least through the capacitor in the thickness direction. At least the inner wall surface of the through hole of the main body; and a conductor wiring layer, which is arranged on the two opposite ends of the through conductor in the thickness direction, the sealing member has in the thickness direction: a first sealing portion, which covers one surface of each of the core substrate and the capacitor component; and a second sealing portion, which covers the other surface of each of the core substrate and the capacitor component, the one surface of the core substrate and the one surface of the capacitor component exist on the same plane, and the diameter of the end of the through hole on the first sealing portion side is larger than the diameter of the end of the through hole on the second sealing portion side.

[0025] [Implementation Method 1]

[0026] Figure 1 FIG. 1 is a schematic cross-sectional view showing an example of a capacitor-embedded substrate according to Embodiment 1 of the present invention.

[0027] Figure 1 The capacitor built-in substrate 1 shown includes a core substrate 100 , a capacitor component 200 , and a sealing member 300 .

[0028] The core substrate 100 has a base material 110. Figure 1 In the illustrated example, the core substrate 100 is composed only of the base material 110 .

[0029] The base material 110 is provided with an opening (also referred to as a cavity) 130 in the thickness direction T. That is, the core substrate 100 is provided with the opening 130. Figure 1 In the illustrated example, the opening 130 penetrates the core substrate 100 in the thickness direction T, and more specifically, penetrates the base material 110 in the thickness direction T.

[0030] The number of openings 130 provided in core substrate 100 may be one or more.

[0031] Preferably, the substrate 110 is made of an insulating material. In other words, preferably, the substrate 110 is an insulating substrate.

[0032] The insulating material constituting the base material 110 may include an insulating resin, a prepreg, an inorganic material, a mixture thereof, or the like.

[0033] Examples of the insulating resin contained in the insulating material constituting the base material 110 include epoxy resin, polyester resin, bismaleimide triazine resin, polyimide resin, phenol resin, and allyl polyphenylene ether resin.

[0034] Examples of the prepreg contained in the insulating material constituting the base material 110 include resin-impregnated glass fiber (resin-impregnated glass cloth) and the like.

[0035] Regarding the prepreg contained in the insulating material constituting the base material 110 , it is preferable that the diameter of the glass fiber (glass cloth) in the prepreg is 3 μm or more and 15 μm or less.

[0036] Regarding the prepreg contained in the insulating material constituting the base material 110 , it is preferable that the content of the resin in the prepreg is 50% by weight or more and 90% by weight or less.

[0037] Examples of the inorganic material contained in the insulating material constituting the substrate 110 include glass.

[0038] Capacitor component 200 is provided in opening 130 of core substrate 100 .

[0039] When a plurality of openings 130 are provided in core substrate 100 , capacitor component 200 may be provided in each opening 130 , or capacitor component 200 may be provided in a portion of openings 130 and electronic components different from capacitor component 200 may be provided in the remaining openings 130 .

[0040] The capacitor component 200 includes a capacitor body 210 , a through conductor 260A, a through conductor 260B, a conductor wiring layer 270A, and a conductor wiring layer 270B.

[0041] The capacitor body 210 has an anode layer 220 , a dielectric layer 230 , and a cathode layer 240 .

[0042] An example of a mode in which capacitor body 210 constitutes an electrolytic capacitor will be described below. In addition, capacitor body 210 may constitute a capacitor other than an electrolytic capacitor.

[0043] Anode layer 220 includes core portion 221 and porous portion 222 .

[0044] In the present specification, the core portion of the anode layer refers to a portion where pores such as a porous portion are substantially absent, and preferably constitutes the central portion in the thickness direction of the anode layer.

[0045] Preferably, the core 221 is made of metal, and more preferably, the core 221 is made of valve-acting metal. When the core 221 is made of valve-acting metal, the anode layer 220 is also referred to as a valve-acting metal matrix.

[0046] Examples of the valve-acting metal constituting the core 221 include metal monomers such as aluminum, tantalum, niobium, titanium, and zirconium, and alloys containing at least one of these metal monomers. Among them, aluminum or an aluminum alloy is preferred.

[0047] The porous portion 222 is provided on at least one of the two surfaces of the core 221 that are opposite to each other in the thickness direction T. That is, the porous portion 222 may be provided on only one surface of the core 221 or on both surfaces of the core 221. In this way, the porous portion 222 is provided on at least one of the two surfaces of the anode layer 220 that are opposite to each other in the thickness direction T. As a result, the surface area of ​​the anode layer 220 becomes larger, and thus the capacity of the capacitor body 210 is easily increased.

[0048] Preferably, the porous portion 222 is an etching layer formed by etching the surface of the anode layer 220 (core portion 221 ).

[0049] The shape of the anode layer 220 is preferably a flat plate (anode plate), and more preferably a foil (anode foil).

[0050] In this specification, the plate-like shape also includes a foil-like shape, a sheet-like shape, a film-like shape, etc., and they are not distinguished based on the size in the thickness direction.

[0051] The dielectric layer 230 is provided on the surface of the porous portion 222. Specifically, the dielectric layer 230 is provided along the surface (contour) of each pore present in the porous portion 222.

[0052] Preferably, the dielectric layer 230 is composed of an oxide film of the valve metal described above. For example, when the anode layer 220 is an aluminum foil, the aluminum foil is subjected to an anodic oxidation treatment (also called chemical conversion treatment) in an aqueous solution containing ammonium adipate or the like, thereby forming an oxide film that becomes the dielectric layer 230. The dielectric layer 230 is formed along the surface of the porous portion 222, so that fine pores (recesses) are provided in the dielectric layer 230.

[0053] The cathode layer 240 faces the anode layer 220 in the thickness direction T with the dielectric layer 230 interposed therebetween.

[0054] The cathode layer 240 is disposed on the surface of the dielectric layer 230 .

[0055] Preferably, cathode layer 240 includes solid electrolyte layer 241 provided on the surface of dielectric layer 230 and conductor layer 242 provided on the surface of solid electrolyte layer 241. When cathode layer 240 includes solid electrolyte layer 241, capacitor body 210 constitutes a solid electrolytic capacitor.

[0056] Preferably, the solid electrolyte layer 241 includes an inner layer provided inside the pores of the dielectric layer 230 and an outer layer covering the inner layer.

[0057] As a constituent material of the solid electrolyte layer 241, for example, conductive polymers such as polypyrrole, polythiophene, and polyaniline can be cited. Among them, polythiophenes are preferred, and poly(3,4-ethylenedioxythiophene) (PEDOT) is particularly preferred. In addition, the conductive polymer may also contain a dopant such as polystyrene sulfonic acid (PSS).

[0058] The solid electrolyte layer 241 is formed in a predetermined area on the surface of the dielectric layer 230, for example, by applying a dispersion of a conductive polymer such as poly(3,4-ethylenedioxythiophene) to the surface of the dielectric layer 230 and drying it, or by using a treatment solution containing a polymerizable monomer such as 3,4-ethylenedioxythiophene to form a polymer film such as poly(3,4-ethylenedioxythiophene) on the surface of the dielectric layer 230.

[0059] Preferably, the conductor layer 242 includes a conductive resin layer 243 provided on the surface of the solid electrolyte layer 241 and a metal layer 244 provided on the surface of the conductive resin layer 243 .

[0060] As the conductive resin layer 243 , for example, a conductive adhesive layer containing at least one conductive filler selected from the group consisting of a copper filler, a silver filler, a nickel filler, and a carbon filler can be cited.

[0061] Preferably, the metal layer 244 contains a metal filler.

[0062] Preferably, the metal filler included in the metal layer 244 is at least one selected from the group consisting of a copper filler, a silver filler, and a nickel filler.

[0063] The metal layer 244 may be, for example, a metal plating film, a metal foil, etc. In this case, the metal layer 244 is preferably composed of at least one metal selected from the group consisting of copper, silver, nickel, and an alloy containing at least one of these metals as a main component.

[0064] In this specification, the main component means the element component having the largest weight proportion.

[0065] The conductor layer 242 may include, for example, a carbon layer as the conductive resin layer 243 and a copper layer as the metal layer 244 .

[0066] The carbon layer is formed in a predetermined region by applying a carbon paste containing a carbon filler to the surface of the solid electrolyte layer 241 by a sponge transfer method, a screen printing method, a dispenser coating method, an inkjet printing method, or the like, for example.

[0067] The copper layer is formed in a predetermined region by applying a copper paste containing a copper filler to the surface of the carbon layer by sponge transfer, screen printing, spray coating, dispenser coating, inkjet printing or the like.

[0068] The conductor layer 242 may include at least one of the conductive resin layer 243 and the metal layer 244. That is, the conductor layer 242 may include only the conductive resin layer 243, only the metal layer 244, or both the conductive resin layer 243 and the metal layer 244.

[0069] Preferably, the capacitor body 210 further includes a shielding layer 250 provided on the periphery of the porous portion 222 when viewed in the thickness direction T.

[0070] Preferably, the shielding layer 250 is provided on the entire periphery of the porous portion 222 when viewed in the thickness direction T. Alternatively, the shielding layer 250 may be provided on a portion of the periphery of the porous portion 222 when viewed in the thickness direction T.

[0071] Preferably, the shielding layer 250 is provided in the thickness direction T so as to extend from at least one of the two surfaces of the anode layer 220 toward the inside, and more preferably, is provided so as to extend from both surfaces of the anode layer 220 toward the inside.

[0072] The shielding layer 250 may or may not be in contact with the core portion 221 in the thickness direction T.

[0073] The shielding layer 250 may be provided outside the porous portion 222 in addition to being provided inside the porous portion 222. In this case, the shielding layer 250 may be filled inside the porous portion 222 and provided on the surface of the filled porous portion 222. In other words, the thickness of the shielding layer 250 may be greater than the thickness of the porous portion 222.

[0074] When the shielding layer 250 is provided outside the porous portion 222 , it is preferable that the shielding layer 250 is provided in a region surrounding the cathode layer 240 when viewed in the thickness direction T.

[0075] When viewed from the thickness direction T, the shielding layer 250 may partially overlap with the cathode layer 240 , or may not overlap with the cathode layer 240 entirely.

[0076] Preferably, the shielding layer 250 is made of an insulating material. In this case, the insulation between the anode layer 220 and the cathode layer 240 is sufficiently ensured, and a short circuit between the two is sufficiently prevented.

[0077] Examples of insulating materials that constitute the shielding layer 250 include polyphenylsulfone (PPS), polyethersulfone (PES), cyanate resin, fluororesin (tetrafluoroethylene, tetrafluoroethylene-perfluoroalkyl vinyl ether copolymer, etc.), a composition composed of soluble polyimide siloxane and epoxy resin, polyimide resin, polyamide-imide resin, and their derivatives or precursors.

[0078] The shielding layer 250 is formed around the porous portion 222 by, for example, applying the above-mentioned insulating material to both surfaces of the anode layer 220 at positions overlapping with the periphery of the porous portion 222 and allowing the insulating material to penetrate from both surfaces of the anode layer 220 toward the inside.

[0079] The shielding layer 250 may be formed on the porous portion 222 before or after the dielectric layer 230 is formed.

[0080] Examples of the planar shape of the capacitor body 210 when viewed from the thickness direction T include a rectangle (square or oblong), a quadrilateral other than a rectangle, a triangle, a pentagon, a hexagon or other polygon, a circle, an ellipse, and the like.

[0081] The number of capacitor bodies 210 in capacitor component 200 may be one or more.

[0082] When the number of capacitor bodies 210 in the capacitor component 200 is plural, it is preferable that the plurality of capacitor bodies 210 are arranged in a plane in a plane direction perpendicular to the thickness direction T. Figure 1 In the example shown, the surface direction is a direction including a first direction U perpendicular to the thickness direction T and a second direction V perpendicular to the thickness direction T and the first direction U.

[0083] When the plurality of capacitor bodies 210 are arranged in a plane in the plane direction, the plurality of capacitor bodies 210 may be arranged in a plane along a plurality of directions in the plane direction or in a single direction. In addition, the plurality of capacitor bodies 210 may be arranged in a plane regularly or irregularly.

[0084] As described above, when the number of capacitor bodies 210 in capacitor component 200 is plural, capacitor component 200 may constitute a capacitor array in which the plural capacitor bodies 210 are arranged in an array in the plane direction.

[0085] The through conductor 260A is provided on at least the inner wall surface of the through hole 261A that penetrates at least the capacitor body 210 in the thickness direction T. Figure 1 In the example shown, the through hole 261A penetrates the capacitor body 210 and the sealing layer 290 described later in the thickness direction T. Figure 1 In the illustrated example, the through conductor 260A is provided on the inner wall surface of the through hole 261A.

[0086] The through conductor 260A may be provided only on the inner wall surface of the through hole 261A, or may be provided throughout the entire interior of the through hole 261A.

[0087] When the through conductor 260A is provided only on the inner wall surface of the through hole 261A, the space surrounded by the through conductor 260A in the through hole 261A may be filled with a resin material. In other words, the capacitor component 200 may further include a resin filling portion 280A provided in the space surrounded by the through conductor 260A in the through hole 261A. If the space in the through hole 261A is eliminated by providing the resin filling portion 280A, the delamination of the through conductor 260A is suppressed.

[0088] It is preferable that the thermal expansion coefficient of the resin filling portion 280A is higher than the thermal expansion coefficient of the through conductor 260A. Specifically, it is preferable that the thermal expansion coefficient of the constituent material (resin material) of the resin filling portion 280A is higher than the thermal expansion coefficient of the constituent material of the through conductor 260A. In this case, the through conductor 260A is pressed against the inner wall surface of the through hole 261A from the inside to the outside of the through hole 261A by the expansion of the resin filling portion 280A (specifically, the constituent material (resin material) of the resin filling portion 280A) in a high temperature environment, thereby sufficiently suppressing the occurrence of delamination of the through conductor 260A.

[0089] In addition, the thermal expansion coefficient of the resin filled portion 280A may be the same as the thermal expansion coefficient of the through conductor 260A, or may be lower than the thermal expansion coefficient of the through conductor 260A.

[0090] Furthermore, capacitor component 200 may not include resin filling portion 280A. In this case, through-conductor 260A is preferably provided throughout the entire interior of through-hole 261A.

[0091] Preferably, the through conductor 260A is electrically connected to the anode layer 220 .

[0092] Preferably, the through conductor 260A is electrically connected to the end surface of the anode layer 220 that is opposite to the inner wall surface of the through hole 261A in the plane direction. Figure 1 In the illustrated example, the through conductor 260A is directly connected to the end surface of the anode layer 220 .

[0093] Preferably, the core 221 and the porous portion 222 are exposed to the end surface of the anode layer 220 electrically connected to the through conductor 260A. In this case, in addition to the core 221, the porous portion 222 is also electrically connected to the through conductor 260A.

[0094] Preferably, the through conductor 260A is electrically connected to the anode layer 220 over the entire circumference of the through hole 261A when viewed in the thickness direction T. In this case, the connection resistance between the anode layer 220 and the through conductor 260A is easily reduced, so the equivalent series resistance (ESR) of the capacitor component 200 is easily reduced.

[0095] Alternatively, the through conductor 260A is electrically connected to the anode layer 220 via the anode connection layer. In this case, it is preferred that the anode connection layer is provided between the anode layer 220 and the through conductor 260A in the plane direction. In this case, the anode connection layer functions as a barrier layer for the anode layer 220, specifically, as a barrier layer for the core portion 221 and the porous portion 222. If the anode connection layer functions as a barrier layer for the anode layer 220, the dissolution of the anode layer 220 that occurs during the treatment with a chemical solution for forming the conductor wiring layer 270A, etc., is suppressed, and further, the infiltration of the chemical solution into the capacitor body 210 is suppressed, so that the reliability of the capacitor component 200 is easily improved.

[0096] Examples of the constituent material of the through conductor 260A include a metal material containing a low-resistance metal such as copper, gold, or silver, and a composite material of the above metal and a resin.

[0097] Examples of the planar shape of the through hole 261A when viewed from the thickness direction T include a circle, an ellipse, a rectangle (square or rectangular), and the like.

[0098] The through-conductor 260A is formed, for example, as follows. First, a through-hole 261A is formed that penetrates at least the capacitor body 210 in the thickness direction T by laser processing or the like. Then, the through-conductor 260A is formed by metallizing the inner wall surface of the through-hole 261A with a metal material containing a metal with low resistance such as copper, gold, or silver. When forming the through-conductor 260A, the inner wall surface of the through-hole 261A is metallized, for example, by electroless copper plating or electrolytic copper plating, so that processing becomes easy. In addition, as for the method of forming the through-conductor 260A, in addition to the method of metallizing the inner wall surface of the through-hole 261A, a method of filling the through-hole 261A with a metal material, a composite material of metal and resin, or the like may be used.

[0099] The through conductor 260B is provided at a position electrically insulated from the through conductor 260A on at least the inner wall surface of the through hole 261B that penetrates at least the capacitor body 210 in the thickness direction T. Figure 1 In the example shown, the through hole 261B penetrates the capacitor body 210 and the sealing layer 290 described later in the thickness direction T at a position separated from the through hole 261A. Figure 1 In the illustrated example, the through conductor 260B is provided on the inner wall surface of the through hole 261B.

[0100] The through conductor 260B may be provided only on the inner wall surface of the through hole 261B, or may be provided throughout the entire interior of the through hole 261B.

[0101] In the case where the through conductor 260B is provided only on the inner wall surface of the through hole 261B, the space surrounded by the through conductor 260B in the through hole 261B may be filled with a resin material. In other words, the capacitor component 200 may further include a resin filling portion 280B provided in the space surrounded by the through conductor 260B in the through hole 261B. If the space in the through hole 261B is eliminated by providing the resin filling portion 280B, the delamination of the through conductor 260B is suppressed.

[0102] It is preferable that the thermal expansion coefficient of the resin filling portion 280B is higher than the thermal expansion coefficient of the through conductor 260B. Specifically, it is preferable that the thermal expansion coefficient of the constituent material (resin material) of the resin filling portion 280B is higher than the thermal expansion coefficient of the constituent material of the through conductor 260B. In this case, the through conductor 260B is pressed against the inner wall surface of the through hole 261B from the inside to the outside of the through hole 261B by the expansion of the resin filling portion 280B (specifically, the constituent material (resin material) of the resin filling portion 280B) under a high temperature environment, thereby sufficiently suppressing the occurrence of delamination of the through conductor 260B.

[0103] In addition, the thermal expansion coefficient of the resin filled portion 280B may be the same as the thermal expansion coefficient of the through conductor 260B, or may be lower than the thermal expansion coefficient of the through conductor 260B.

[0104] Furthermore, capacitor component 200 may not include resin filling portion 280B. In this case, through-conductor 260B is preferably provided throughout the entire interior of through-hole 261B.

[0105] Preferably, the through conductor 260B is electrically connected to the cathode layer 240. Figure 1 In the illustrated example, the through conductor 260B is electrically connected to the cathode layer 240 via the conductive wiring layer 270B and a via conductor 285 described later.

[0106] Preferably, an insulating material such as a sealing layer 290 described later is filled between the capacitor body 210 and the through conductor 260B in the plane direction, and further, between the anode layer 220 and the through conductor 260B in the plane direction. In this case, the insulation between the anode layer 220 and the through conductor 260B, and further, the insulation between the anode layer 220 and the cathode layer 240 is ensured, and a short circuit between the two is prevented.

[0107] Examples of the constituent material of the through conductor 260B include a metal material containing a low-resistance metal such as copper, gold, or silver, and a composite material of the above metal and a resin.

[0108] The constituent materials of the through conductor 260A and the through conductor 260B may be the same as or different from each other.

[0109] Examples of the planar shape of the through hole 261B when viewed from the thickness direction T include a circle, an ellipse, a rectangle (square or oblong), and the like.

[0110] The planar shapes of the through hole 261A and the through hole 261B may be the same as or different from each other.

[0111] The through conductor 260B is formed, for example, as follows. First, a through hole is formed that penetrates the capacitor body 210 in the thickness direction T by performing laser processing or the like. Next, a sealing layer (for example, the sealing layer 290 described later) that at least fills the above-mentioned through hole is formed by sealing the capacitor body 210 using an insulating material or the like. Then, the through hole 261B is formed by performing laser processing or the like on the above-mentioned sealing layer. At this time, by making the diameter of the through hole 261B smaller than the diameter of the through hole formed previously, a state is set in which the above-mentioned sealing layer is provided between the inner wall surface of the through hole formed previously and the inner wall surface of the through hole 261B in the surface direction. Thereafter, the inner wall surface of the through hole 261B is metallized using a metal material containing a low-resistance metal such as copper, gold, or silver, thereby forming the through conductor 260B. When forming the through-conductor 260B, the inner wall surface of the through-hole 261B may be metalized by, for example, electroless copper plating or electrolytic copper plating, so that processing becomes easy. In addition, in addition to the method of metalizing the inner wall surface of the through-hole 261B, the method of filling the through-hole 261B with a metal material or a composite material of metal and resin may be used as a method of forming the through-conductor 260B.

[0112] The conductive wiring layer 270A is provided on both ends of the through conductor 260A that are opposite to each other in the thickness direction T.

[0113] The conductor wiring layer 270A is electrically connected to the through conductor 260A, and functions as a connection terminal of the capacitor component 200. Figure 1 In the illustrated example, the conductive wiring layer 270A is electrically connected to the anode layer 220 via the through conductor 260A, and functions as a connection terminal for the anode layer 220 .

[0114] Examples of the constituent material of the conductive wiring layer 270A include metal materials containing low-resistance metals such as copper, gold, and silver. In this case, the conductive wiring layer 270A is formed by, for example, plating both ends of the through conductor 260A.

[0115] In order to improve the close fit between the conductor wiring layer 270A and other components, here, to improve the close fit between the conductor wiring layer 270A and the through conductor 260A, a mixed material of at least one conductive filler selected from the group consisting of silver filler, copper filler, nickel filler and carbon filler and resin can also be used as the constituent material of the conductor wiring layer 270A.

[0116] The conductive wiring layer 270B is provided at both ends of the through conductor 260B that are opposed to each other in the thickness direction T at a position electrically insulated from the conductive wiring layer 270A.

[0117] The conductor wiring layer 270B is electrically connected to the through conductor 260B, and functions as a connection terminal of the capacitor component 200. Figure 1 In the illustrated example, the conductive wiring layer 270B is electrically connected to the cathode layer 240 via a via conductor 285 described later, and functions as a connection terminal for the cathode layer 240 .

[0118] Examples of the constituent material of the conductive wiring layer 270B include metal materials containing low-resistance metals such as copper, gold, and silver. In this case, the conductive wiring layer 270B is formed by plating both ends of the through conductor 260B, for example.

[0119] In order to improve the close fit between the conductor wiring layer 270B and other components, here, to improve the close fit between the conductor wiring layer 270B and the through conductor 260B, a mixed material of at least one conductive filler selected from the group consisting of silver filler, copper filler, nickel filler and carbon filler and resin can also be used as the constituent material of the conductor wiring layer 270B.

[0120] The constituent materials of the conductive wiring layer 270A and the conductive wiring layer 270B may be the same as or different from each other.

[0121] Preferably, capacitor component 200 further includes sealing layer 290 that seals capacitor body 210 . In this case, capacitor body 210 is protected by sealing layer 290 .

[0122] Preferably, the sealing layer 290 covers at least one of two surfaces of the capacitor body 210 that are opposite to each other in the thickness direction T, and more preferably covers both surfaces of the capacitor body 210. Figure 1 In the illustrated example, the sealing layer 290 covers the cathode layer 240 and the shielding layer 250 constituting both surfaces of the capacitor body 210 .

[0123] Preferably, the sealing layer 290 overlaps the entire capacitor body 210 when viewed in the thickness direction T.

[0124] Alternatively, the sealing layer 290 may penetrate the capacitor body 210 in the thickness direction T. Figure 1 In the example shown, the sealing layer 290 penetrates the anode layer 220 , the dielectric layer 230 , and the shielding layer 250 in the thickness direction T.

[0125] It is preferable that the sealing layer 290 is provided between the capacitor body 210 and the through conductor 260B in the plane direction, and further, between the anode layer 220 and the through conductor 260B in the plane direction.

[0126] It is preferred that the sealing layer 290 is in contact with both the capacitor body 210 and the through conductor 260B in the surface direction, and further, is in contact with both the anode layer 220 and the through conductor 260B. In this case, it is preferred that the core portion 221 and the porous portion 222 are exposed to the end surface of the anode layer 220 in contact with the sealing layer 290. As a result, the contact area between the porous portion 222 and the sealing layer 290 is increased, and the close contact between the two is improved, so that it is difficult for the porous portion 222 and the sealing layer 290 to peel off.

[0127] In the case where the core portion 221 and the porous portion 222 are exposed to the end face of the anode layer 220 in contact with the sealing layer 290, it is preferable that the shielding layer 250 is provided around the through conductor 260B by the constituent material of the shielding layer 250 entering the pores of the porous portion 222. In this case, the insulation between the anode layer 220 and the through conductor 260B is sufficiently ensured, and further, the insulation between the anode layer 220 and the cathode layer 240 is sufficiently ensured, and a short circuit between the two is sufficiently prevented.

[0128] When the core portion 221 and the porous portion 222 are exposed to the end surface of the anode layer 220 in contact with the sealing layer 290, it is preferable that the constituent material of the sealing layer 290 enters the pores of the porous portion 222. In this case, the mechanical strength of the porous portion 222 is improved and the occurrence of delamination caused by the pores of the porous portion 222 is suppressed.

[0129] It is preferable that the thermal expansion coefficient of the sealing layer 290 is higher than the thermal expansion coefficient of the through conductor 260B. Specifically, it is preferable that the thermal expansion coefficient of the constituent material of the sealing layer 290 is higher than the thermal expansion coefficient of the constituent material of the through conductor 260B. In this case, the porous portion 222 and the through conductor 260B are pressed by the expansion of the sealing layer 290 (specifically, the constituent material of the sealing layer 290) in a high temperature environment, thereby sufficiently suppressing the occurrence of delamination.

[0130] In addition, the thermal expansion coefficient of the sealing layer 290 may be the same as the thermal expansion coefficient of the through conductor 260B, or may be lower than the thermal expansion coefficient of the through conductor 260B.

[0131] When the number of capacitor bodies 210 in capacitor component 200 is plural, sealing layer 290 may be filled between adjacent capacitor bodies 210 so as to separate the plurality of capacitor bodies 210 .

[0132] As described above, it is preferable that the sealing layer 290 is provided in a manner following the surface shape of the capacitor body 210 .

[0133] Preferably, the through hole 261A not only penetrates the capacitor body 210 in the thickness direction T, but also penetrates the sealing layer 290 in the thickness direction T. Figure 1 In the illustrated example, the through hole 261A penetrates the capacitor body 210 and the sealing layer 290 in the thickness direction T.

[0134] Preferably, the through hole 261B not only penetrates the capacitor body 210 in the thickness direction T, but also penetrates the sealing layer 290 in the thickness direction T. Figure 1 In the illustrated example, the through hole 261B penetrates the capacitor body 210 and the sealing layer 290 in the thickness direction T.

[0135] Preferably, the conductor wiring layer 270A is provided on both surfaces of the sealing layer 290 that are opposite to each other in the thickness direction T in addition to being provided on both ends of the through conductor 260A. Figure 1 In the example shown, the conductor wiring layer 270A is provided from both ends of the through conductor 260A to both surfaces of the sealing layer 290. Specifically, the conductor wiring layer 270A extends from one end of the through conductor 260A (at Figure 1 The lower end portion is provided on one surface of the sealing layer 290 (in Figure 1 The lower surface in the middle), and from the other end of the through conductor 260A (at Figure 1 The upper end portion is provided to the other surface of the sealing layer 290 (in Figure 1 The middle is the upper surface).

[0136] Preferably, the conductor wiring layer 270B is provided on both surfaces of the sealing layer 290 that are opposite to each other in the thickness direction T in addition to being provided on both ends of the through conductor 260B. Figure 1 In the example shown, the conductor wiring layer 270B is provided from both ends of the through conductor 260B to both surfaces of the sealing layer 290. Specifically, the conductor wiring layer 270B is provided from one end of the through conductor 260B (at Figure 1 The lower end portion is provided on one surface of the sealing layer 290 (in Figure 1 The lower surface in the middle), and from the other end of the through conductor 260B (at Figure 1The upper end portion is provided to the other surface of the sealing layer 290 (in Figure 1 The middle is the upper surface).

[0137] Preferably, the sealing layer 290 is made of an insulating material.

[0138] The insulating material constituting the sealing layer 290 may include an insulating resin.

[0139] Examples of the insulating resin contained in the insulating material constituting the sealing layer 290 include epoxy resin, phenol resin, polyimide resin, and the like.

[0140] The insulating material constituting the sealing layer 290 may contain a filler.

[0141] Examples of the filler contained in the insulating material constituting the sealing layer 290 include inorganic fillers such as a silica filler and an alumina filler.

[0142] The sealing layer 290 may be composed of only one layer or may be composed of multiple layers.

[0143] When the sealing layer 290 is composed of a plurality of layers, the constituent materials of the plurality of layers may be the same as or different from each other, or may be partially different from each other.

[0144] Sealing layer 290 is formed so as to seal capacitor body 210 by, for example, a method of thermocompression bonding an insulating resin sheet or a method of applying an insulating resin paste and then thermally curing the paste.

[0145] Preferably, the capacitor component 200 further includes a via conductor 285 that penetrates the sealing layer 290 in the thickness direction T and is connected to the cathode layer 240 and the conductive wiring layer 270B.

[0146] Examples of a material constituting via conductor 285 include a metal material containing a low-resistance metal such as copper, gold, or silver.

[0147] Via conductor 285 is formed, for example, by plating the inner wall surface of a through hole penetrating sealing layer 290 in thickness direction T with the above-mentioned metal material or by filling a conductive paste and then performing heat treatment.

[0148] The sealing member 300 seals the core substrate 100 and the capacitor component 200 .

[0149] The sealing member 300 includes, in the thickness direction T, a first sealing portion 310 and a second sealing portion 320 .

[0150] The first sealing portion 310 covers one surface of each of the core substrate 100 and the capacitor component 200 in the thickness direction T (in the Figure 1The middle is the lower surface).

[0151] The second sealing portion 320 covers the other surface of each of the core substrate 100 and the capacitor component 200 in the thickness direction T (in the Figure 1 The middle is the upper surface).

[0152] Preferably, sealing member 300 is provided between core substrate 100 and capacitor component 200 in the plane direction.

[0153] The sealing member 300 may be integrated with the sealing layer 290 so that no interface exists between the sealing member 300 and the sealing layer 290 , or may not be integrated with the sealing layer 290 so that an interface exists between the sealing member 300 and the sealing layer 290 .

[0154] Preferably, the sealing member 300 is made of an insulating material.

[0155] The insulating material constituting the sealing member 300 may include an insulating resin, a prepreg, an inorganic material, a mixture thereof, or the like.

[0156] Examples of the insulating resin contained in the insulating material constituting the sealing member 300 include epoxy resin, phenol resin, polyimide resin, and the like.

[0157] Examples of the prepreg contained in the insulating material constituting the sealing member 300 include resin-impregnated glass fiber (resin-impregnated glass cloth) and the like.

[0158] Regarding the prepreg included in the insulating material constituting the sealing member 300 , it is preferable that the diameter of the glass fiber (glass cloth) in the prepreg be 3 μm or more and 15 μm or less.

[0159] Regarding the prepreg included in the insulating material constituting the sealing member 300 , it is preferable that the content of the resin in the prepreg be 50% by weight or more and 90% by weight or less.

[0160] Examples of the inorganic material contained in the insulating material constituting the sealing member 300 include glass.

[0161] The material constituting the sealing member 300 may be the same as or different from the material constituting the base material 110 .

[0162] When both the substrate 110 and the seal 300 are made of prepreg, the diameter of the glass fiber (glass cloth) in the prepreg, the density of the glass fiber (glass cloth) in the prepreg, the resin content in the prepreg, etc. can be the same between the substrate 110 and the seal 300, or different.

[0163] The insulating material constituting the sealing member 300 may contain a filler.

[0164] Examples of the filler contained in the insulating material constituting the sealing member 300 include inorganic fillers such as a silica filler and an alumina filler.

[0165] The sealing member 300 may be composed of only one layer or may be composed of multiple layers.

[0166] When the sealing member 300 is composed of a plurality of layers, the constituent materials of the plurality of layers may be the same as or different from each other, or may be partially different from each other.

[0167] Sealing member 300 is formed so as to seal core substrate 100 and capacitor component 200 by, for example, a method of thermocompression bonding an insulating resin sheet or a method of applying an insulating resin paste and then thermally curing the paste.

[0168] The built-in capacitor substrate 1 is manufactured, for example, as follows. First, a core substrate 100 having an opening 130 in the thickness direction T and a capacitor component 200 are prepared. Next, the core substrate 100 is cut from one surface (at Figure 1 The core substrate 100 is fixed to the support tape by pasting the core substrate 100 on the support tape. Next, the capacitor component 200 is placed in the opening 130 of the core substrate 100 and pressed against the support tape exposed in the opening 130 of the core substrate 100, thereby fixing the capacitor component 200 on the support tape. Then, the core substrate 100 and the capacitor component 200 are attached from their respective other surfaces (on the Figure 1 After the seal including the second sealing portion 320 is formed by sealing the core substrate 100 and the capacitor component 200 from one surface (the upper surface in the figure) to the support tape side, the support tape is removed. Figure 1 The sealing member including the first sealing portion 310 is formed so as to be sealed on the surface (the lower surface in the middle) side and to be in contact with the previously formed sealing member, thereby obtaining the sealing member 300. In the above manner, the built-in capacitor substrate 1 is obtained.

[0169] When the built-in capacitor substrate 1 is manufactured as described above, for example, a characteristic positional relationship is established between the core substrate 100 and the capacitor component 200. That is, in the built-in capacitor substrate 1, one surface of the core substrate 100 (at Figure 1 The lower surface in the figure) and one surface of the capacitor component 200 (in Figure 1 is the lower surface) exists on the same plane (in Figure 1 Specifically, the surface of the core substrate 100 on the first sealing portion 310 side and the surface of the capacitor component 200 on the first sealing portion 310 side are on the same plane. Figure 1In the example shown, the surface of the core substrate 100 on the first sealing portion 310 side corresponds to the surface of the base material 110 on the first sealing portion 310 side. Figure 1 In the example shown, the surface of the capacitor component 200 on the first sealing portion 310 side corresponds to the surface of the conductor wiring layer 270A and the conductor wiring layer 270B on the first sealing portion 310 side. Figure 1 In the illustrated example, the surface of the substrate 110 on the first sealing portion 310 side and the surfaces of the conductive wiring layer 270A and the conductive wiring layer 270B on the first sealing portion 310 side are located on the same plane.

[0170] In this specification, “the surface of one member and the surface of another member exist on the same plane” means that the maximum distance in the thickness direction from the surface of one member (eg, core substrate) to the surface of another member (eg, capacitor component) is 10 μm or less.

[0171] In the capacitor built-in substrate 1 , a diameter R1a (hereinafter simply referred to as diameter R1a) of the end of the through hole 261A on the first sealing portion 310 side is larger than a diameter R2a (hereinafter simply referred to as diameter R2a) of the end of the through hole 261A on the second sealing portion 320 side.

[0172] In the capacitor built-in substrate 1 , a diameter R1b (hereinafter simply referred to as diameter R1b) of the end of the through hole 261B on the first sealing portion 310 side is larger than a diameter R2b (hereinafter simply referred to as diameter R2b) of the end of the through hole 261B on the second sealing portion 320 side.

[0173] If the built-in capacitor substrate 1 is manufactured as described above, for example, the pressure when the capacitor component 200 is crimped to the support tape is applied to the conductor wiring layer 270A on the support tape side, that is, the conductor wiring layer 270A on the first sealing portion 310 side. In contrast, in the built-in capacitor substrate 1, as described above, the diameter R1a of the through hole 261A is larger than the diameter R2a, so that when the capacitor component 200 is crimped, the pressure applied to the conductor wiring layer 270A on the first sealing portion 310 side is dispersed, so that the conductor wiring layer 270A on the first sealing portion 310 side, and further, the through conductor 260A provided with the conductor wiring layer 270A at the end is less likely to be damaged by cracks or the like. Moreover, in the capacitor built-in substrate 1, as described above, the diameter R1a of the through hole 261A is larger than the diameter R2a, that is, the diameter of the through hole 261A does not increase as a whole from the end on the first sealing portion 310 side to the end on the second sealing portion 320 side, so the area of ​​the portion in the capacitor component 200 (capacitor body 210) where the electrostatic capacitance can be manifested does not decrease as a whole, and as a result, the reduction in the electrostatic capacitance of the capacitor component 200 (capacitor body 210) is suppressed.

[0174] In addition, if the built-in capacitor substrate 1 is manufactured as described above, for example, the pressure when the capacitor component 200 is pressed against the support tape is applied to the conductor wiring layer 270B on the support tape side, that is, the conductor wiring layer 270B on the first sealing portion 310 side. In contrast, in the built-in capacitor substrate 1, as described above, the diameter R1b of the through hole 261B is larger than the diameter R2b, so that when the capacitor component 200 is pressed, the pressure applied to the conductor wiring layer 270B on the first sealing portion 310 side is dispersed, so that the conductor wiring layer 270B on the first sealing portion 310 side, and further, the through conductor 260B provided with the conductor wiring layer 270B at the end is less likely to be damaged by cracks or the like. Moreover, in the capacitor built-in substrate 1, as described above, the diameter R1b of the through hole 261B is larger than the diameter R2b, that is, the diameter of the through hole 261B does not increase as a whole from the end on the first sealing portion 310 side to the end on the second sealing portion 320 side, so the area of ​​the portion in the capacitor component 200 (capacitor body 210) where the electrostatic capacitance can be manifested does not decrease as a whole, and as a result, the reduction in the electrostatic capacitance of the capacitor component 200 (capacitor body 210) is suppressed.

[0175] In summary, according to the capacitor built-in substrate 1, it is possible to simultaneously suppress the through conductor (in Figure 1 The through conductor 260A and the through conductor 260B are provided at the ends thereof (in Figure 1 The conductor wiring layer 270A and the conductor wiring layer 270B are damaged and the electrostatic capacitance is reduced in the capacitor built-in substrate.

[0176] The diameter of the end portion of the through hole on the first sealing portion side is determined by an equivalent circle diameter converted from the area of ​​the end portion when viewed in the thickness direction.

[0177] The diameter of the end portion of the through hole on the second sealing portion side is determined by an equivalent circle diameter converted from the area of ​​the end portion when viewed in the thickness direction.

[0178] In the built-in capacitor substrate 1, both the relationship A of "diameter R1a is larger than diameter R2a" and the relationship B of "diameter R1b is larger than diameter R2b" are established, but at least one of the relationship A and the relationship B only needs to be established. That is, in the built-in capacitor substrate 1, only the relationship A may be established, or only the relationship B may be established. As a preferred form, both the relationship A and the relationship B may be established.

[0179] As described above, in the capacitor built-in substrate of the present invention, when there are multiple through holes provided with through conductors and conductor wiring layers, the feature that "the diameter of the end of the through hole on the first sealing portion side is larger than the diameter of the end of the through hole on the second sealing portion side" only needs to be true for at least one of the multiple through holes, and it is particularly preferred that it is true for all the through holes.

[0180] The diameter R1a and the diameter R1b may be the same as or different from each other.

[0181] The diameter R2a and the diameter R2b may be the same as or different from each other.

[0182] Preferably, the diameter R3a of the portion of the through hole 261A that passes through the capacitor body 210 is smaller than the diameter R1a of the end of the through hole 261A on the first sealing portion 310 side. In this case, the reduction in the area of ​​the portion that can exhibit electrostatic capacitance in the capacitor component 200 (capacitor body 210) is sufficiently suppressed, and thus the reduction in the electrostatic capacitance of the capacitor component 200 (capacitor body 210) is sufficiently suppressed.

[0183] Preferably, the diameter R3b of the portion of the through hole 261B that passes through the capacitor body 210 is smaller than the diameter R1b of the end portion of the through hole 261B on the first sealing portion 310 side. In this case, the reduction in the area of ​​the portion that can exhibit electrostatic capacitance in the capacitor component 200 (capacitor body 210) is sufficiently suppressed, and thus the reduction in the electrostatic capacitance of the capacitor component 200 (capacitor body 210) is sufficiently suppressed.

[0184] Preferably, the diameter R3a of the portion of the through hole 261A that passes through the capacitor body 210 is smaller than the diameter R1a of the end of the through hole 261A on the first sealing portion 310 side and the diameter R2a of the end of the through hole 261A on the second sealing portion 320 side. In this case, the reduction in the area of ​​the portion that can express the electrostatic capacitance in the capacitor component 200 (capacitor body 210) is significantly suppressed, thereby significantly suppressing the reduction in the electrostatic capacitance of the capacitor component 200 (capacitor body 210).

[0185] Furthermore, the diameter R3a of the portion of the through hole 261A that passes through the capacitor body 210 may be smaller than the diameter R1a of the end portion of the through hole 261A on the first sealing portion 310 side, but larger than the diameter R2a of the end portion of the through hole 261A on the second sealing portion 320 side. Figure 1In the example shown, diameter R3b of the portion of through hole 261B that passes through capacitor body 210 is smaller than diameter R1b of the end of through hole 261B on the first sealing portion 310 side, but larger than diameter R2b of the end of through hole 261B on the second sealing portion 320 side.

[0186] As for the through hole 261A, as long as the diameter R1a of the end portion on the first sealing portion 310 side is larger than the diameter R2a of the end portion on the second sealing portion 320 side, the cross-sectional shape thereof along the thickness direction T is not particularly limited. The cross-sectional shape of the through hole 261A may be, for example, a necked shape in which the diameter of the portion passing through the capacitor body 210 is extremely small, or a tapered shape in which the diameter decreases from the end portion on the first sealing portion 310 side toward the end portion on the second sealing portion 320 side. Figure 1 In the example shown, the cross-sectional shape of through hole 261A is the above-mentioned constricted shape, which is a preferred form from the viewpoint of suppressing a reduction in the area of ​​a portion where capacitance can be expressed in capacitor component 200 (capacitor body 210 ).

[0187] As for the through hole 261B, as long as the diameter R1b of the end portion on the first sealing portion 310 side is larger than the diameter R2b of the end portion on the second sealing portion 320 side, the cross-sectional shape thereof along the thickness direction T is not particularly limited. The cross-sectional shape of the through hole 261B may be, for example, a necked shape in which the diameter of the portion passing through the capacitor body 210 is extremely small, or a tapered shape in which the diameter decreases from the end portion on the first sealing portion 310 side toward the end portion on the second sealing portion 320 side. Figure 1 In the example shown, the cross-sectional shape of the through hole 261B is the above-mentioned tapered shape.

[0188] The cross-sectional shapes of the through hole 261A and the through hole 261B may be the same as or different from each other.

[0189] Preferably, the thickness of the core substrate 100 is greater than the thickness of the capacitor component 200. In this case, when the core substrate 100 and the capacitor component 200 are sealed by the seal 300, the pressure applied from the seal 300 to the capacitor component 200 is easily reduced, so that the capacitor component 200 is less likely to be damaged by the pressure.

[0190] Preferably, the linear expansion coefficient of the substrate 110 in the plane direction is 80% or more and 120% or less of the linear expansion coefficient of the seal 300 in the plane direction. In this case, the stress applied to the capacitor component 200 from the core substrate 100 and the seal 300 is easily reduced, so it is difficult to cause damage to the capacitor component 200 due to the above stress. In addition, the thermal characteristics of the core substrate 100 and the seal 300 are easily balanced, so it is difficult for the capacitor built-in substrate 1 to warp due to the difference in thermal characteristics.

[0191] When the linear expansion coefficient of the substrate 110 in the surface direction is 80% or more and 120% or less of the linear expansion coefficient of the sealant 300 in the surface direction, the linear expansion coefficient of the core 221 in the surface direction may be greater than 120% of the linear expansion coefficient of the sealant 300 in the surface direction. In this case, during the heat treatment of the capacitor built-in substrate 1, the core substrate 100 and the sealant 300 play a role in restraining the capacitor component 200, thereby sufficiently suppressing the thermal expansion and thermal contraction of the capacitor component 200, and as a result, the through conductor (in Figure 1 The through conductor 260A and the through conductor 260B are provided at the ends thereof (in Figure 1 The conductor wiring layer 270A and the conductor wiring layer 270B are damaged.

[0192] Furthermore, even when the linear expansion coefficient of the substrate 110 in the plane direction is not more than 80% and less than 120% of the linear expansion coefficient of the sealant 300 in the plane direction, the linear expansion coefficient of the core 221 in the plane direction may be greater than 120% of the linear expansion coefficient of the sealant 300 in the plane direction. In this case, the sealant 300 also plays a role of restraining the capacitor component 200 during the heat treatment of the capacitor built-in substrate 1, thereby suppressing the thermal expansion and thermal contraction of the capacitor component 200, and as a result, suppressing the through conductor (in Figure 1 The through conductor 260A and the through conductor 260B are provided at the ends thereof (in Figure 1 The conductor wiring layer 270A and the conductor wiring layer 270B are damaged.

[0193] When the linear expansion coefficient of the substrate 110 in the plane direction is 80% or more and 120% or less of the linear expansion coefficient of the seal 300 in the plane direction, the linear expansion coefficient of the core 221 in the plane direction may be 80% or more and 120% or less of the linear expansion coefficient of the seal 300 in the plane direction. In this case, the stress applied to the capacitor component 200 from the core substrate 100 and the seal 300 is easier to reduce, so it is more difficult for the capacitor component 200 to be damaged by the above stress. In addition, the thermal characteristics of the core substrate 100, the capacitor component 200, and the seal 300 are easier to be balanced, so it is more difficult for the capacitor built-in substrate 1 to warp due to the difference in thermal characteristics.

[0194] In addition, when the linear expansion coefficient of the substrate 110 in the plane direction is not more than 80% and less than 120% of the linear expansion coefficient of the seal 300 in the plane direction, the linear expansion coefficient of the core 221 in the plane direction may be more than 80% and less than 120% of the linear expansion coefficient of the seal 300 in the plane direction. In this case, the stress applied from the seal 300 to the capacitor component 200 is easy to reduce, so it is difficult to damage the capacitor component 200 caused by the above stress. In addition, the thermal characteristics of the capacitor component 200 and the seal 300 are easy to be balanced, so it is difficult to cause the capacitor built-in substrate 1 to warp due to the difference in thermal characteristics.

[0195] Preferably, the linear expansion coefficient of the substrate 110 in the plane direction is the same as the linear expansion coefficient of the seal 300 in the plane direction, and the linear expansion coefficient of the substrate 110 in the plane direction and the linear expansion coefficient of the seal 300 in the plane direction are smaller than the linear expansion coefficient of the core 221 in the plane direction. In this case, during the heat treatment of the capacitor built-in substrate 1, the core substrate 100 and the seal 300 play a role in restraining the capacitor component 200, so that the thermal expansion and thermal contraction of the capacitor component 200 are sufficiently suppressed, and as a result, the through conductor (in Figure 1 The through conductor 260A and the through conductor 260B are provided at the ends thereof (in Figure 1 The conductor wiring layer 270A and the conductor wiring layer 270B are damaged.

[0196] Preferably, the linear expansion coefficient of the substrate 110 in the plane direction is smaller than the linear expansion coefficient of the sealing member 300 in the plane direction, and the linear expansion coefficient of the sealing member 300 in the plane direction is smaller than the linear expansion coefficient of the core 221. In this case, the curing temperature (for example, thermal curing temperature) of the sealing member 300 having a larger linear expansion coefficient in the plane direction than the substrate 110 is likely to be lower than the curing temperature (for example, thermal curing temperature) of the substrate 110, so that during the heat treatment of the capacitor built-in substrate 1, the core substrate 100 plays a role in restraining the capacitor component 200 and it is difficult for the capacitor component 200 to fail or deteriorate in characteristics due to the heat when the sealing member 300 is cured (for example, thermally cured).

[0197] The linear expansion coefficient of the target member (e.g., substrate, core, sealant, etc.) of the built-in capacitor substrate in the plane direction is the linear expansion coefficient of any direction in the plane direction (e.g., Figure 1The linear expansion coefficient in the first direction U or the second direction V) can be determined by thermomechanical analysis (TMA) or dynamic viscoelasticity measurement (DMA). In addition, when it is difficult to directly remove (extract) the target component from the built-in capacitor substrate, it is also possible to prepare a measurement component composed of the same material as the constituent material of the target component and measure the linear expansion coefficient in the surface direction of the measurement component using the above method.

[0198] Alternatively, the built-in capacitor substrate 1 may further include an external electrode layer 400A provided on two surfaces of the sealing member 300 that are opposite to each other in the thickness direction T and that is electrically connected to the conductive wiring layer 270A. In this case, the external electrode layer 400A functions as a connection terminal of the built-in capacitor substrate 1. Figure 1 In the illustrated example, the external electrode layer 400A functions as a connection terminal for the conductive wiring layer 270A, and further functions as a connection terminal for the anode layer 220 .

[0199] Examples of the constituent material of the external electrode layer 400A include metal materials containing a low-resistance metal such as copper, gold, or silver.

[0200] The capacitor-embedded substrate 1 may further include a via conductor 410A that penetrates the sealing material 300 in the thickness direction T and connects the conductive wiring layer 270A and the external electrode layer 400A.

[0201] Examples of the constituent material of via conductor 410A include metal materials containing low-resistance metals such as copper, gold, and silver.

[0202] The via conductor 410A is formed, for example, by plating the inner wall surface of a through hole penetrating the sealing member 300 in the thickness direction T with the above-mentioned metal material or by filling the through hole with a conductive paste and then performing a heat treatment.

[0203] Alternatively, the built-in capacitor substrate 1 may further include an external electrode layer 400B provided on two surfaces of the sealing member 300 that are opposite to each other in the thickness direction T and that is electrically connected to the conductive wiring layer 270B. In this case, the external electrode layer 400B functions as a connection terminal of the built-in capacitor substrate 1. Figure 1 In the illustrated example, the external electrode layer 400B functions as a connection terminal for the conductive wiring layer 270B, and further functions as a connection terminal for the cathode layer 240 .

[0204] Examples of the constituent material of the external electrode layer 400B include metal materials containing low-resistance metals such as copper, gold, and silver.

[0205] The constituent materials of the external electrode layer 400A and the external electrode layer 400B may be the same as or different from each other.

[0206] The capacitor-embedded substrate 1 may further include a via conductor 410B that penetrates the sealing material 300 in the thickness direction T and connects the conductive wiring layer 270B and the external electrode layer 400B.

[0207] Examples of the constituent material of via conductor 410B include a metal material containing a low-resistance metal such as copper, gold, or silver.

[0208] Via conductor 410A and via conductor 410B may be made of the same material or different materials.

[0209] The via conductor 410B is formed, for example, by plating the inner wall surface of a through hole penetrating the sealing member 300 in the thickness direction T with the above-mentioned metal material or by filling the through hole with a conductive paste and then performing a heat treatment.

[0210] [Implementation Method 2]

[0211] In the capacitor-embedded substrate according to the second embodiment of the present invention, the capacitor component further includes a protective layer covering at least a portion of at least one of a surface on the first sealing portion side and a surface on the second sealing portion side of the conductive wiring layer.

[0212] The built-in capacitor substrate according to the second embodiment of the present invention is the same as the built-in capacitor substrate according to the first embodiment of the present invention except for the above-mentioned points.

[0213] Figure 2 It is a schematic cross-sectional view showing an example of a capacitor-embedded substrate according to a second embodiment of the present invention.

[0214] exist Figure 2 In the illustrated capacitor-embedded substrate 2 , capacitor component 200 further includes a protective layer 295 .

[0215] The protective layer 295 covers at least a portion of at least one of the surface of the conductive wiring layer 270A on the first sealing portion 310 side and the surface on the second sealing portion 320 side. Figure 2 In the example shown, the protective layer 295 covers both the surface of the conductor wiring layer 270A on the first sealing portion 310 side and the surface on the second sealing portion 320 side. Thus, the conductor wiring layer 270A is protected by the protective layer 295. Furthermore, when the capacitor component 200 is crimped, the pressure applied to the conductor wiring layer 270A on the first sealing portion 310 side is fully dispersed, so that the conductor wiring layer 270A on the first sealing portion 310 side and the through conductor 260A provided with the conductor wiring layer 270A at the end are more difficult to be damaged.

[0216] Furthermore, the protective layer 295 may be provided on only one of the surface of the conductive wiring layer 270A on the first sealing portion 310 side and the surface on the second sealing portion 320 side.

[0217] The protective layer 295 covers at least a portion of at least one of the surface on the first sealing portion 310 side and the surface on the second sealing portion 320 side of the conductive wiring layer 270B. Figure 2 In the example shown, the protective layer 295 covers both the surface of the conductor wiring layer 270B on the first sealing portion 310 side and the surface on the second sealing portion 320 side. Thus, the conductor wiring layer 270B is protected by the protective layer 295. Furthermore, when the capacitor component 200 is crimped, the pressure applied to the conductor wiring layer 270B on the first sealing portion 310 side is fully dispersed, so that the conductor wiring layer 270B on the first sealing portion 310 side and the through conductor 260B provided with the conductor wiring layer 270B at the end are more difficult to be damaged.

[0218] Furthermore, the protective layer 295 may be provided on only one of the surface on the first sealing portion 310 side and the surface on the second sealing portion 320 side of the conductive wiring layer 270B.

[0219] Preferably, the protective layer 295 is provided from the surface of the conductor wiring layer 270A on the first sealing portion 310 side to the surface of the conductor wiring layer 270B on the first sealing portion 310 side. In other words, preferably, the protective layer 295 is provided on the entire surface of the conductor wiring layer 270A and the conductor wiring layer 270B on the first sealing portion 310 side. Specifically, preferably, the protective layer 295 is provided in a manner that covers the entire surface of the conductor wiring layer 270A and the conductor wiring layer 270B on the first sealing portion 310 side.

[0220] Preferably, the protective layer 295 is provided from the surface of the conductor wiring layer 270A on the second sealing portion 320 side to the surface of the conductor wiring layer 270B on the second sealing portion 320 side. In other words, preferably, the protective layer 295 is provided on the entire surface of the conductor wiring layer 270A and the conductor wiring layer 270B on the second sealing portion 320 side. Specifically, preferably, the protective layer 295 is provided in a manner that covers the entire surface of the conductor wiring layer 270A and the conductor wiring layer 270B on the second sealing portion 320 side.

[0221] It is particularly preferred that the protective layer 295 is provided from the surface of the first sealing portion 310 side of the conductor wiring layer 270A to the surface of the first sealing portion 310 side of the conductor wiring layer 270B, and is provided from the surface of the second sealing portion 320 side of the conductor wiring layer 270A to the surface of the second sealing portion 320 side of the conductor wiring layer 270B. That is, it is particularly preferred that the protective layer 295 is provided on the entire surface of the first sealing portion 310 side of the conductor wiring layer 270A and the conductor wiring layer 270B and the entire surface of the second sealing portion 320 side of the conductor wiring layer 270A and the conductor wiring layer 270B. Specifically, it is particularly preferred that the protective layer 295 is provided in a manner that covers the entire surface of the first sealing portion 310 side of the conductor wiring layer 270A and the conductor wiring layer 270B and the entire surface of the second sealing portion 320 side of the conductor wiring layer 270A and the conductor wiring layer 270B.

[0222] Preferably, the protective layer 295 overlaps the entire capacitor body 210 when viewed in the thickness direction T.

[0223] Preferably, in the face direction (in Figure 2 In the first direction (U), both ends of the protective layer 295 are located at the same positions as both ends of the capacitor body 210.

[0224] In the built-in capacitor substrate 2, as in the built-in capacitor substrate 1, one surface (at Figure 2 The lower surface in the figure) and one surface of the capacitor component 200 (in Figure 2 is the lower surface) exists on the same plane (in Figure 2 is on the dotted line). Figure 2 In the example shown, one surface of the core substrate 100, specifically, the surface of the core substrate 100 on the first sealing portion 310 side corresponds to the surface of the substrate 110 on the first sealing portion 310 side. Figure 2 In the example shown, one surface of the capacitor component 200, specifically, the surface of the capacitor component 200 on the first sealing portion 310 side corresponds to the surface of the protective layer 295 on the first sealing portion 310 side. Figure 2 In the illustrated example, the surface of the substrate 110 on the first sealing section 310 side and the surface of the protective layer 295 on the first sealing section 310 side are on the same plane.

[0225] Preferably, the linear expansion coefficient of the protective layer 295 in the plane direction is 80% or more and 120% or less of the linear expansion coefficient of the core 221 in the plane direction. Figure 2 The stress is applied by the conductor wiring layer 270A and the conductor wiring layer 270B, and further, the stress is applied by the protective layer 295 to the through conductor (in Figure 2 The stress applied by the through conductors 260A and 260B in the embodiment is easily reduced, so that the through conductors (in the embodiment of FIG. 1 ) are less likely to be damaged by the above stress. Figure 2 The through conductor 260A and the through conductor 260B are damaged.

[0226] When the linear expansion coefficient of the protective layer 295 in the plane direction is 80% or more and 120% or less of the linear expansion coefficient of the core 221 in the plane direction, it is preferable that the linear expansion coefficient of the protective layer 295 in the plane direction is greater than 120% of the linear expansion coefficient of the sealant 300 in the plane direction. In this case, during the heat treatment of the capacitor built-in substrate 2, the sealant 300 plays a role in restraining the capacitor component 200 having the protective layer 295, so that the thermal expansion and thermal contraction of the capacitor component 200 having the protective layer 295 are suppressed, and as a result, the through conductor (in Figure 2 The through conductor 260A and the through conductor 260B are provided at the ends thereof (in Figure 2 The conductor wiring layer 270A and the conductor wiring layer 270B are damaged.

[0227] When the linear expansion coefficient of the protective layer 295 in the plane direction is 80% or more and 120% or less of the linear expansion coefficient of the core 221 in the plane direction, it is preferable that the linear expansion coefficient of the protective layer 295 in the plane direction is greater than 120% of the linear expansion coefficient of the base material 110 in the plane direction. In this case, during the heat treatment of the capacitor built-in substrate 2, the core substrate 100 plays a role of restraining the capacitor component 200 having the protective layer 295, thereby suppressing the thermal expansion and thermal contraction of the capacitor component 200 having the protective layer 295, and as a result, suppressing the through conductor (in Figure 2 The through conductor 260A and the through conductor 260B are provided at the ends thereof (in Figure 2 The conductor wiring layer 270A and the conductor wiring layer 270B are damaged.

[0228] It is particularly preferred that the linear expansion coefficient of the protective layer 295 in the surface direction is not less than 80% and not more than 120% of the linear expansion coefficient of the core 221 in the surface direction, and that the linear expansion coefficient of the protective layer 295 in the surface direction is greater than 120% of the linear expansion coefficient of the sealant 300 in the surface direction, and that the linear expansion coefficient of the protective layer 295 in the surface direction is greater than 120% of the linear expansion coefficient of the base material 110 in the surface direction. In this case, during heat treatment of the capacitor built-in substrate 2, the core substrate 100 and the sealant 300 play a role in restraining the capacitor component 200 having the protective layer 295, thereby sufficiently suppressing thermal expansion and thermal contraction of the capacitor component 200 having the protective layer 295, and as a result, sufficiently suppressing the through conductor (in Figure 2 The through conductor 260A and the through conductor 260B are provided at the ends thereof (in Figure 2 The conductor wiring layer 270A and the conductor wiring layer 270B are damaged.

[0229] In the case where the linear expansion coefficient in the plane direction of the substrate 110 is the same as the linear expansion coefficient in the plane direction of the seal 300 and the linear expansion coefficient in the plane direction of the substrate 110 and the linear expansion coefficient in the plane direction of the seal 300 are smaller than the linear expansion coefficient in the plane direction of the core 221, it is preferred that the linear expansion coefficient in the plane direction of the protective layer 295 is the same as the linear expansion coefficient in the plane direction of the substrate 110 and the linear expansion coefficient in the plane direction of the seal 300. In other words, it is preferred that the linear expansion coefficient in the plane direction of the substrate 110, the linear expansion coefficient in the plane direction of the seal 300, and the linear expansion coefficient in the plane direction of the protective layer 295 are the same as each other, and the linear expansion coefficient in the plane direction of the substrate 110, the linear expansion coefficient in the plane direction of the seal 300, and the linear expansion coefficient in the plane direction of the protective layer 295 are smaller than the linear expansion coefficient in the plane direction of the core 221. In this case, the stress applied to the capacitor component 200 from the core substrate 100 and the sealing member 300 is easily reduced, so that the capacitor component 200 is less likely to be damaged by the stress. Figure 2 The stress is applied by the conductor wiring layer 270A and the conductor wiring layer 270B, and further, the stress is applied by the protective layer 295 to the through conductor (in Figure 2 The stress applied by the through conductors 260A and 260B in the embodiment is easily reduced, so that the through conductors (in the embodiment of FIG. 1 ) are less likely to be damaged by the above stress. Figure 2 The through conductor 260A and the through conductor 260B are damaged.

[0230] When the linear expansion coefficient of the substrate 110 in the plane direction is the same as the linear expansion coefficient of the seal 300 in the plane direction, and the linear expansion coefficient of the substrate 110 in the plane direction and the linear expansion coefficient of the seal 300 in the plane direction are smaller than the linear expansion coefficient of the core 221 in the plane direction, it is preferable that the constituent material of the protective layer 295 is the same as the constituent material of the seal 300. In this case, processing and treatment of the seal 300 and the protective layer 295 become easy. For example, when forming the via conductor 410A and the via conductor 410B, laser processing for forming a through hole penetrating the seal 300 and the protective layer 295 in the thickness direction T, slag removal processing for removing residue generated during the laser processing, plating processing for plating the inner wall surface of the through hole with a metal material, etc. become easy.

[0231] In the case where the linear expansion coefficient in the plane direction of the substrate 110 is smaller than the linear expansion coefficient in the plane direction of the seal 300, and the linear expansion coefficient in the plane direction of the seal 300 is smaller than the linear expansion coefficient in the plane direction of the core 221, it is preferable that the linear expansion coefficient in the plane direction of the protective layer 295 is the same as the linear expansion coefficient in the plane direction of the substrate 110. That is, it is preferable that the linear expansion coefficient in the plane direction of the substrate 110 and the linear expansion coefficient in the plane direction of the protective layer 295 are the same as each other, and the linear expansion coefficient in the plane direction of the substrate 110 and the linear expansion coefficient in the plane direction of the protective layer 295 are smaller than the linear expansion coefficient in the plane direction of the seal 300, and the linear expansion coefficient in the plane direction of the seal 300 is smaller than the linear expansion coefficient in the plane direction of the core 221. In this case, during the heat treatment of the built-in capacitor substrate 1, the core substrate 100 constrains the capacitor component 200 and the protective layer 295 constrains the portion of the capacitor component 200 other than the protective layer 295, so that the thermal expansion and thermal contraction of the capacitor component 200 are sufficiently suppressed, and as a result, the through conductor (in the Figure 2 The through conductor 260A and the through conductor 260B are provided at the ends thereof (in Figure 2 The conductor wiring layer 270A and the conductor wiring layer 270B are damaged.

[0232] When the linear expansion coefficient of the substrate 110 in the plane direction is smaller than that of the seal 300, and the linear expansion coefficient of the seal 300 in the plane direction is smaller than that of the core 221, it is preferable that the constituent material of the protective layer 295 is the same as that of the seal 300. In this case, processing and treatment of the seal 300 and the protective layer 295 become easy. For example, when forming the via conductors 410A and 410B, laser processing for forming a through hole penetrating the seal 300 and the protective layer 295 in the thickness direction T, slag removal processing for removing residues generated during the laser processing, plating processing for plating the inner wall surface of the through hole with a metal material, etc. become easy.

[0233] Preferably, the protective layer 295 is made of an insulating material.

[0234] The insulating material constituting the protective layer 295 may include an insulating resin, a prepreg, an inorganic material, a mixture thereof, or the like.

[0235] Examples of the insulating resin contained in the insulating material constituting the protective layer 295 include epoxy resin, phenol resin, polyimide resin, and the like.

[0236] Examples of the prepreg contained in the insulating material constituting the protective layer 295 include resin-impregnated glass fiber (resin-impregnated glass cloth) and the like.

[0237] As the prepreg contained in the insulating material constituting the protective layer 295, it is preferable that the diameter of the glass fiber (glass cloth) in the prepreg is 3 μm or more and 15 μm or less.

[0238] The prepreg included in the insulating material constituting the protective layer 295 preferably has a resin content of 50% by weight or more and 90% by weight or less.

[0239] Examples of the inorganic material contained in the insulating material constituting the protective layer 295 include glass.

[0240] The material constituting the protective layer 295 may be the same as or different from the material constituting the base material 110 .

[0241] When both the substrate 110 and the protective layer 295 are composed of prepreg, the diameter of the glass fiber (glass cloth) in the prepreg, the density of the glass fiber (glass cloth) in the prepreg, the resin content in the prepreg, etc. can be the same between the substrate 110 and the protective layer 295, or different.

[0242] The constituent material of the protective layer 295 may be the same as or different from the constituent material of the sealing member 300. When the constituent materials of the sealing member 300 and the protective layer 295 are the same, it is easy to process and treat the sealing member 300 and the protective layer 295. For example, when forming the via conductors 410A and 410B, it is easy to perform laser processing for forming a through hole that penetrates the sealing member 300 and the protective layer 295 in the thickness direction T, perform a slag removal process for removing residues generated during the laser processing, and perform a plating process for plating the inner wall surface of the through hole with a metal material.

[0243] When the sealing member 300 and the protective layer 295 are both made of prepreg, the diameter of the glass fiber (glass cloth) in the prepreg, the density of the glass fiber (glass cloth) in the prepreg, the resin content in the prepreg, etc. may be the same or different between the sealing member 300 and the protective layer 295.

[0244] The same protective layer 295 may be composed of only one layer or may be composed of multiple layers.

[0245] When the same protective layer 295 is composed of multiple layers, the constituent materials of the multiple layers may be the same as each other, different from each other, or may be partially different from each other.

[0246] The protective layer 295 is formed in a manner that covers at least a portion of at least one of the surfaces on the first sealing portion 310 side and the second sealing portion 320 side of the conductor wiring layer 270A, for example, by a method of thermally pressing an insulating resin sheet or by applying an insulating resin slurry and then thermally curing it.

[0247] In the capacitor built-in substrate 2 , the protective layer 295 may be provided with an opening in the thickness direction T, and the opening of the protective layer 295 may be filled with the sealing material 300 .

[0248] Figure 3 FIG. 1 is a schematic cross-sectional view showing an example of a capacitor-embedded substrate according to a modification of the second embodiment of the present invention.

[0249] exist Figure 3 In the capacitor built-in substrate 2' shown in FIG. 1 , the protective layer 295 is provided with an opening 296 in the thickness direction T. Figure 3 In the example shown, the opening 296 penetrates the protective layer 295 in the thickness direction T. Figure 3 In the illustrated example, the protective layer 295 is provided with an opening 296 in the thickness direction T so that each of the conductive wiring layer 270A and the conductive wiring layer 270B is partially exposed.

[0250] The opening 296 of the protective layer 295 is filled with a sealing member 300. Figure 3 In the example shown, each part of the conductor wiring layer 270A and the conductor wiring layer 270B exposed in the opening 296 of the protective layer 295 is covered by the sealing member 300 filled in the opening 296 of the protective layer 295. As a result, the contact area of ​​the sealing member 300 with respect to the capacitor component 200 becomes larger, and thus the close contact force of the sealing member 300 with respect to the capacitor component 200 is improved.

[0251] Furthermore, the opening 296 may not penetrate the protective layer 295 in the thickness direction T. In other words, the conductive wiring layer 270A or the conductive wiring layer 270B may not be exposed in the opening 296 of the protective layer 295 .

[0252] The opening 296 of the protective layer 295 may be in a hole shape (hole shape) or a slit shape (groove shape) when viewed from the thickness direction T.

[0253] The number of openings 296 provided in the same protective layer 295 may be one or more.

[0254] When a plurality of openings 296 are provided in the same protective layer 295 , the plurality of openings 296 may be arranged regularly or irregularly when viewed in the thickness direction T.

[0255] [Implementation method 3]

[0256] In the capacitor-embedded substrate according to the third embodiment of the present invention, the core substrate further includes an electrode provided on at least one of a surface on the first sealing portion side and a surface on the second sealing portion side of the base.

[0257] The built-in capacitor substrate according to the third embodiment of the present invention is the same as the built-in capacitor substrate according to the first embodiment of the present invention except for the above-mentioned points.

[0258] Figure 4 FIG. 1 is a schematic cross-sectional view showing an example of a capacitor-embedded substrate according to a third embodiment of the present invention.

[0259] exist Figure 4 In the illustrated capacitor-embedded substrate 3 , the core substrate 100 further includes an electrode 120 .

[0260] The electrode 120 is provided on the surface of the substrate 110 on the first sealing portion 310 side (at Figure 4 The lower surface in the middle) and the surface on the second sealing portion 320 side (in Figure 4 On at least one surface of the upper surface. Figure 4 In the illustrated example, the electrode 120 is provided on both the surface of the substrate 110 on the first sealing section 310 side and the surface on the second sealing section 320 side.

[0261] Alternatively, the electrode 120 may be provided on only one of the surface of the substrate 110 on the first sealing section 310 side and the surface on the second sealing section 320 side.

[0262] Examples of the constituent material of the electrode 120 include metal materials containing a low-resistance metal such as copper, gold, or silver.

[0263] In the built-in capacitor substrate 3, similarly to the built-in capacitor substrate 1, one surface (at Figure 4 The lower surface in the figure) and one surface of the capacitor component 200 (in Figure 4 is the lower surface) exists on the same plane (in Figure 4 is on the dotted line). Figure 4 In the example shown, one surface of the core substrate 100, specifically, the surface of the core substrate 100 on the first sealing portion 310 side corresponds to the surface of the electrode 120 on the first sealing portion 310 side. Figure 4 In the example shown, one surface of the capacitor component 200, specifically, the surface of the capacitor component 200 on the first sealing portion 310 side corresponds to the surface of the conductor wiring layer 270A and the conductor wiring layer 270B on the first sealing portion 310 side. Figure 4In the illustrated example, the surface of the electrode 120 on the first sealing portion 310 side and the surfaces of the conductive wiring layer 270A and the conductive wiring layer 270B on the first sealing portion 310 side are located on the same plane.

[0264] [Implementation Method 4]

[0265] In the capacitor built-in substrate of embodiment 4 of the present invention, the capacitor component also has a protective layer covering at least a portion of at least one of the surfaces on the first sealing part side and the second sealing part side of the conductor wiring layer, and the core substrate also has an electrode arranged on at least one of the surfaces on the first sealing part side and the second sealing part side of the substrate.

[0266] The built-in capacitor substrate according to the fourth embodiment of the present invention is the same as the built-in capacitor substrate according to the first embodiment of the present invention except for the above-mentioned points.

[0267] Figure 5 FIG. 1 is a schematic cross-sectional view showing an example of a capacitor-embedded substrate according to a fourth embodiment of the present invention.

[0268] exist Figure 5 In the illustrated capacitor-embedded substrate 4 , capacitor component 200 further includes a protective layer 295 .

[0269] The protective layer 295 in the built-in capacitor substrate 4 may have a shape similar to that in the built-in capacitor substrate 2 (see Figure 2 ) is the same as the protective layer 295 in the built-in capacitor substrate 4. For example, in the built-in capacitor substrate 4, the protective layer 295 may be provided with an opening in the thickness direction T, and the opening of the protective layer 295 may be filled with a sealing member 300. The opening of the protective layer 295 may be the same as that of the built-in capacitor substrate 2' (see Figure 3 ) has the same shape as the opening 296 of the protective layer 295.

[0270] In the capacitor built-in substrate 4 , the core substrate 100 further includes an electrode 120 .

[0271] The shape of the electrode 120 in the capacitor built-in substrate 4 may be the same as that of the capacitor built-in substrate 3 (see Figure 4 ) has the same shape as the electrode 120.

[0272] In the built-in capacitor substrate 4, as in the built-in capacitor substrate 1, one surface (at Figure 5 The lower surface in the figure) and one surface of the capacitor component 200 (in Figure 5 is the lower surface) exists on the same plane (in Figure 5 is on the dotted line). Figure 5In the example shown, one surface of the core substrate 100, specifically, the surface of the core substrate 100 on the first sealing portion 310 side corresponds to the surface of the electrode 120 on the first sealing portion 310 side. Figure 5 In the example shown, one surface of the capacitor component 200, specifically, the surface of the capacitor component 200 on the first sealing portion 310 side corresponds to the surface of the protective layer 295 on the first sealing portion 310 side. Figure 5 In the illustrated example, the surface of the electrode 120 on the first sealing portion 310 side and the surface of the protective layer 295 on the first sealing portion 310 side are on the same plane.

[0273] In the built-in capacitor substrate of the present invention, the capacitor component (capacitor body) is not limited to the electrolytic capacitor including the above-mentioned solid electrolytic capacitor. In the built-in capacitor substrate of the present invention, the capacitor component (capacitor body) may also be, for example, a ceramic capacitor using barium titanate, a thin film capacitor using silicon nitride (SiN), silicon dioxide (SiO2), hydrogen fluoride (HF), etc., a trench capacitor having a MIM (Metal Insulator Metal) structure, etc.

[0274] In the capacitor built-in substrate of the present invention, from the viewpoint of thinning and increasing the area of ​​the capacitor component and improving the mechanical properties of the capacitor component, such as rigidity and flexibility, it is preferred that the capacitor component (capacitor body) constitutes a capacitor with a metal such as aluminum as a substrate, and it is more preferred that it constitutes an electrolytic capacitor with a metal such as aluminum as a substrate.

[0275] The built-in capacitor substrate of the present invention can also be used, for example, in a composite electronic component. Such a composite electronic component includes, for example, the built-in capacitor substrate of the present invention and an electronic component electrically connected to the built-in capacitor substrate of the present invention (for example, an external electrode layer).

[0276] The electronic component used in the composite electronic component may be a passive element, an active element, both a passive element and an active element, or a composite of a passive element and an active element.

[0277] As a passive element, an inductor etc. can be mentioned, for example.

[0278] Examples of active elements include a memory, a GPU (Graphical Processing Unit), a CPU (Central Processing Unit), an MPU (Micro Processing Unit), and a PMIC (Power Management IC).

[0279] When the built-in capacitor substrate of the present invention is used for a composite electronic component, the built-in capacitor substrate of the present invention is treated as a substrate for mounting an electronic component, for example. In this case, by setting the built-in capacitor substrate of the present invention as a sheet as a whole, and setting the electronic component mounted on the built-in capacitor substrate of the present invention as a sheet, the built-in capacitor substrate of the present invention and the electronic component can be electrically connected in the thickness direction via a through conductor that penetrates the electronic component in the thickness direction. As a result, the passive components and active components as electronic components can be configured as a module together.

[0280] For example, by electrically connecting the capacitor element of the present invention between a voltage regulator including a semiconductor active element and a load to which the converted DC voltage is supplied, a switching regulator can be formed.

[0281] In the composite electronic component, a circuit layer may be formed on the sealing material of the capacitor-embedded substrate of the present invention, and the circuit layer may be electrically connected to a passive element or an active element as the electronic component.

[0282] The following contents are disclosed in this specification.

[0283] <1>

[0284] A capacitor built-in substrate, characterized in that:

[0285] The capacitor built-in substrate includes:

[0286] a core substrate having an opening in a thickness direction;

[0287] a capacitor component disposed in the opening of the core substrate; and

[0288] a sealing member that seals the core substrate and the capacitor component,

[0289] The core substrate has a base material having the opening.

[0290] The capacitor component comprises: a capacitor body having an anode layer, a dielectric layer and a cathode layer, the anode layer having a core, the cathode layer being opposite to the anode layer via the dielectric layer in the thickness direction; a through conductor provided on at least an inner wall surface of a through hole penetrating at least the capacitor body in the thickness direction; and a conductor wiring layer provided on two opposite end portions of the through conductor in the thickness direction.

[0291] The sealing member has, in the thickness direction, a first sealing portion covering one surface of each of the core substrate and the capacitor component, and a second sealing portion covering the other surface of each of the core substrate and the capacitor component.

[0292] The one surface of the core substrate and the one surface of the capacitor component are on the same plane,

[0293] The diameter of an end portion of the through hole on the first sealing portion side is larger than the diameter of an end portion of the through hole on the second sealing portion side.

[0294] <2>

[0295] The capacitor-embedded substrate according to <1>, wherein:

[0296] A diameter of a portion of the through hole that passes through the capacitor body is smaller than a diameter of an end portion of the through hole on the first sealing portion side.

[0297] <3>

[0298] The capacitor built-in substrate according to <2>, wherein:

[0299] A diameter of a portion of the through hole that passes through the capacitor body is smaller than a diameter of an end portion of the through hole on the first sealing portion side and a diameter of an end portion of the through hole on the second sealing portion side.

[0300] <4>

[0301] The capacitor-embedded substrate according to any one of <1> to <3>, wherein:

[0302] The core substrate has a thickness greater than a thickness of the capacitor component.

[0303] <5>

[0304] The capacitor-embedded substrate according to any one of <1> to <4>, wherein:

[0305] A linear expansion coefficient of the substrate in a plane direction perpendicular to the thickness direction is 80% or more and 120% or less of a linear expansion coefficient of the sealing material in the plane direction.

[0306] <6>

[0307] The capacitor-embedded substrate according to any one of <1> to <5>, wherein:

[0308] A linear expansion coefficient of the core portion in a plane direction perpendicular to the thickness direction is larger than 120% of a linear expansion coefficient of the seal member in the plane direction.

[0309] <7>

[0310] The capacitor-embedded substrate according to any one of <1> to <5>, wherein:

[0311] A linear expansion coefficient of the core portion in a plane direction perpendicular to the thickness direction is 80% or more and 120% or less of a linear expansion coefficient of the seal member in the plane direction.

[0312] <8>

[0313] The capacitor-embedded substrate according to any one of <1> to <7>, wherein:

[0314] The capacitor component further includes a protective layer that covers at least a portion of at least one of a surface of the conductive wiring layer on the first sealing portion side and a surface of the conductive wiring layer on the second sealing portion side.

[0315] <9>

[0316] The capacitor built-in substrate according to <8>, wherein:

[0317] The linear expansion coefficient of the protective layer in a plane direction perpendicular to the thickness direction is 80% or more and 120% or less of the linear expansion coefficient of the core in the plane direction.

[0318] <10>

[0319] The capacitor built-in substrate according to <9>, wherein:

[0320] A linear expansion coefficient of the protective layer in the plane direction is larger than 120% of a linear expansion coefficient of the sealing material in the plane direction.

[0321] <11>

[0322] The capacitor built-in substrate according to <9> or <10>, wherein:

[0323] A linear expansion coefficient of the protective layer in the plane direction is larger than 120% of a linear expansion coefficient of the substrate in the plane direction.

[0324] <12>

[0325] The capacitor built-in substrate according to any one of <8> to <11>, wherein

[0326] The protective layer is provided with an opening in the thickness direction.

[0327] The opening of the protective layer is filled with the sealing material.

[0328] <13>

[0329] The capacitor built-in substrate according to any one of <1> to <12>, wherein:

[0330] The core substrate further includes an electrode provided on at least one of a surface of the base material on the first sealing portion side and a surface of the base material on the second sealing portion side.

[0331] <14>

[0332] The capacitor-embedded substrate according to any one of <1> to <13>, wherein:

[0333] The anode layer comprises the core and a porous portion, wherein the porous portion is provided on at least one of two surfaces of the core facing each other in the thickness direction.

[0334] The dielectric layer is provided on the surface of the porous portion.

[0335] The cathode layer is provided on the surface of the dielectric layer.

[0336] Description of Reference Numerals

[0337] 1, 2, 2', 3, 4, built-in substrate for capacitor; 100, core substrate; 110, base material; 120, electrode; 130, opening (cavity); 200, capacitor component; 210, capacitor body; 220, anode layer; 221, core; 222, porous part; 230, dielectric layer; 240, cathode layer; 241, solid electrolyte layer; 242, conductor layer; 243, conductive resin layer; 244, metal layer; 250, shielding layer; 260A, 260B, through conductor; 261A, 261B, through hole; 270A, 270B, conductor arrangement Line layer; 280A, 280B, resin filling part; 285, 410A, 410B, via conductor; 290, sealing layer; 295, protective layer; 296, opening; 300, seal; 310, first sealing part; 320, second sealing part; 400A, 400B, external electrode layer; R1a, R1b, diameter of the end of the through hole on the first sealing part side; R2a, R2b, diameter of the end of the through hole on the second sealing part side; R3a, R3b, diameter of the portion of the through hole that passes through the capacitor body; T, thickness direction; U, first direction; V, second direction.

Claims

1. A capacitor built-in substrate, characterized in that: The capacitor built-in substrate includes: a core substrate having an opening in a thickness direction; a capacitor component disposed in the opening of the core substrate; and a sealing member that seals the core substrate and the capacitor component, The core substrate has a base material having the opening, The capacitor component comprises: a capacitor body having an anode layer, a dielectric layer and a cathode layer, the anode layer having a core, the cathode layer being opposite to the anode layer across the dielectric layer in the thickness direction; a through conductor provided on at least an inner wall surface of a through hole penetrating at least the capacitor body in the thickness direction; and a conductor wiring layer provided on two opposite end portions of the through conductor in the thickness direction. The sealing member has, in the thickness direction, a first sealing portion covering one surface of each of the core substrate and the capacitor component, and a second sealing portion covering the other surface of each of the core substrate and the capacitor component. The one surface of the core substrate and the one surface of the capacitor component are present on the same plane, The diameter of the end portion of the through hole on the first sealing portion side is larger than the diameter of the end portion of the through hole on the second sealing portion side.

2. The capacitor built-in substrate according to claim 1, wherein: A diameter of a portion of the through hole that passes through the capacitor body is smaller than a diameter of an end portion of the through hole on the first sealing portion side.

3. The capacitor built-in substrate according to claim 2, wherein: A diameter of a portion of the through hole that passes through the capacitor body is smaller than a diameter of an end portion of the through hole on the first sealing portion side and a diameter of an end portion of the through hole on the second sealing portion side.

4. The built-in capacitor substrate according to any one of claims 1 to 3, wherein The core substrate has a thickness greater than a thickness of the capacitor component.

5. The built-in capacitor substrate according to any one of claims 1 to 4, wherein The linear expansion coefficient of the substrate in a plane direction perpendicular to the thickness direction is 80% or more and 120% or less of the linear expansion coefficient of the sealing material in the plane direction.

6. The built-in capacitor substrate according to any one of claims 1 to 5, wherein: A linear expansion coefficient of the core portion in a plane direction perpendicular to the thickness direction is larger than 120% of a linear expansion coefficient of the seal member in the plane direction.

7. The built-in capacitor substrate according to any one of claims 1 to 5, wherein: A linear expansion coefficient of the core portion in a plane direction perpendicular to the thickness direction is 80% or more and 120% or less of a linear expansion coefficient of the seal member in the plane direction.

8. The built-in capacitor substrate according to any one of claims 1 to 7, wherein The capacitor component further includes a protective layer that covers at least a portion of at least one of a surface of the conductive wiring layer on the first sealing portion side and a surface of the conductive wiring layer on the second sealing portion side.

9. The capacitor built-in substrate according to claim 8, wherein: A linear expansion coefficient of the protective layer in a plane direction perpendicular to the thickness direction is 80% or more and 120% or less of a linear expansion coefficient of the core in the plane direction.

10. The capacitor built-in substrate according to claim 9, wherein: The linear expansion coefficient of the protective layer in the plane direction is larger than 120% of the linear expansion coefficient of the sealing material in the plane direction.

11. The built-in capacitor substrate according to claim 9 or 10, wherein: The linear expansion coefficient of the protective layer in the plane direction is larger than 120% of the linear expansion coefficient of the substrate in the plane direction.

12. The built-in capacitor substrate according to any one of claims 8 to 11, wherein The protective layer is provided with an opening in the thickness direction. The opening of the protection layer is filled with the sealing member.

13. The built-in capacitor substrate according to any one of claims 1 to 12, wherein: The core substrate further includes an electrode provided on at least one of a surface of the base material on the first sealing portion side and a surface of the base material on the second sealing portion side.

14. The built-in capacitor substrate according to any one of claims 1 to 13, wherein: The anode layer includes the core portion and a porous portion provided on at least one of two surfaces of the core portion that are opposite to each other in the thickness direction. The dielectric layer is provided on the surface of the porous portion. The cathode layer is disposed on the surface of the dielectric layer.

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