Single crystal furnace

Abstract

This invention provides a single crystal furnace, comprising: a flow guiding component, which is vertically and vertically disposed; a heat insulation component, which is sleeved outside the flow guiding component; a crucible component, which is located inside the heat insulation component and is rotatably and / or vertically disposed below the flow guiding component; and an exhaust channel, wherein a first part of the exhaust channel is located on the flow guiding component, a second part of the exhaust channel is located on the heat insulation component, the inlet of the exhaust channel is located at the lower end of the flow guiding component and faces the interior of the crucible component, and the outlet of the exhaust channel is located on the heat insulation component and faces the exterior of the crucible component; wherein, when the upper end of the flow guiding component moves to overlap with the upper end of the heat insulation component, the first part and the second part of the exhaust channel are connected; when the upper end of the flow guiding component moves to separate from the upper end of the heat insulation component, the first part and the second part of the exhaust channel are disconnected, thereby solving the problem of low exhaust efficiency in the crucible of the existing single crystal furnace.

Description

Technical Field

[0001] This invention relates to the field of single crystal furnace technology, and more specifically, to a single crystal furnace. Background Technology

[0002] In recent years, with the continuous growth of global demand for renewable energy, photovoltaic power generation, as a key component of green energy and sustainable human development, has become increasingly important. The booming development of the photovoltaic industry, especially the widespread application of monocrystalline silicon solar cells, has placed higher demands on the quality of monocrystalline silicon ingots. Therefore, how to improve ingot quality has become one of the core issues in the current research and development of photovoltaic materials.

[0003] In the growth of single-crystal silicon, optimizing the thermal field design is crucial for improving the quality of the crystal rod. Traditional thermal field designs prioritize compactness and thermal efficiency, often maintaining only the necessary safety distances to ensure thermal stability between components. However, during crystal growth, as the crucible rises, the gas path within the furnace gradually narrows, not only limiting the timely removal of volatile impurities but also potentially promoting impurity accumulation, thus adversely affecting the purity and quality of the crystal rod.

[0004] In the crystal pulling process, the crucible-to-lid ratio technique is often used to maintain a relatively stable molten silicon level. However, as the amount of remaining material gradually decreases, the crucible has to be raised to accommodate the liquid level, which leads to a further narrowing of the upper gas passage. At the same time, the gas exhaust path becomes longer, the exhaust efficiency decreases, volatiles in the furnace cannot be effectively removed, impurities accumulate more rapidly, and ultimately the quality of the crystal rod is reduced.

[0005] Currently, most single-crystal furnaces employ a bottom-venting design. This venting method is relatively effective in the early stages of crystal growth, but with advancements in technology, especially with the increase in crucible position, airflow within the furnace is obstructed, leading to reduced venting efficiency. Although there is a potential need to change the gas path, limitations in existing processes and technologies make it difficult to significantly improve venting efficiency, thus affecting impurity control and quality assurance during the production of single-crystal silicon rods.

[0006] The aforementioned problems indicate that current technologies have shortcomings in the exhaust design of single-crystal growth furnaces. A more efficient and reliable exhaust design is urgently needed to overcome the problem of impurity accumulation caused by poor airflow within the furnace, thereby improving the quality and purity of single-crystal silicon ingots. This need is of great significance not only to Jinko Solar Co., Ltd., but also to the entire photovoltaic industry. Summary of the Invention

[0007] The main objective of this invention is to provide a single crystal furnace to solve the problem of low exhaust efficiency in the crucible of existing single crystal furnaces.

[0008] To achieve the above objectives, according to one aspect of the present invention, a single crystal furnace is provided, comprising: a flow guiding component, which is vertically and vertically disposed; a heat insulation component, which is sleeved outside the flow guiding component; a crucible component, which is located inside the heat insulation component and is rotatably and / or vertically disposed below the flow guiding component; and an exhaust channel, wherein a first portion of the exhaust channel is located on the flow guiding component, a second portion of the exhaust channel is located on the heat insulation component, the inlet of the exhaust channel is located at the lower end of the flow guiding component and faces the interior of the crucible component, and the outlet of the exhaust channel is located on the heat insulation component and faces the exterior of the crucible component; wherein, when the upper end of the flow guiding component moves to overlap with the upper end of the heat insulation component, the first portion and the second portion of the exhaust channel are connected; and when the upper end of the flow guiding component moves to separate from the upper end of the heat insulation component, the first portion and the second portion of the exhaust channel are disconnected.

[0009] Furthermore, the single crystal furnace also includes: a main furnace chamber shell, with the flow guiding component and the heat insulation component all located inside the main furnace chamber shell; a main heating component, which is located inside the heat insulation component and is arranged around the crucible component outside the crucible component; wherein, the gas outlet is arranged facing the main heating component.

[0010] Furthermore, the exhaust channel includes: a first channel, which is provided on the flow guiding component, with a first inlet and a first outlet located at the lower and upper ends of the flow guiding component, respectively; and a second channel, which is provided on the heat insulation component, with a second inlet and a second outlet located at the upper and middle parts of the heat insulation component, respectively; wherein, when the upper end of the flow guiding component moves to overlap with the upper end of the heat insulation component, the first outlet and the second inlet are connected, with the first inlet being an air inlet and the second outlet being an air outlet.

[0011] Furthermore, the flow guiding component includes a first flow guiding cylinder and a second flow guiding cylinder, with the first flow guiding cylinder sleeved outside the second flow guiding cylinder; wherein, the first channel is disposed on the first flow guiding cylinder.

[0012] Furthermore, the first channel includes a first orifice section, a second orifice section, and a third orifice section connected sequentially along the gas flow direction; wherein, the distance between the first orifice section and the centerline of the flow guiding component gradually decreases from top to bottom; the second orifice section is parallel to the centerline of the flow guiding component; a portion of the third orifice section is perpendicular to the centerline of the flow guiding component, and another portion of the third orifice section is parallel to the centerline of the flow guiding component.

[0013] Furthermore, the insulation component includes an annular insulation cover, an insulation cylinder, and a liner arranged sequentially from top to bottom. The inner side of the upper end of the annular insulation cover is connected to the flow guiding component, the outer side of the lower end of the annular insulation cover is connected to the upper end of the insulation cylinder, and the lower end of the insulation cylinder is connected to the inner side of the upper end of the liner. The second channel includes a fourth hole segment, a fifth hole segment, and a sixth hole segment connected sequentially along the gas flow direction. The fourth hole segment, the fifth hole segment, and the sixth hole segment are correspondingly arranged on the annular insulation cover, the insulation cylinder, and the liner.

[0014] Furthermore, a portion of the fourth hole segment is parallel to the centerline of the insulation component, and another portion of the fourth hole segment is perpendicular to the centerline of the insulation component; the fifth hole segment is parallel to the centerline of the insulation component; and the sixth hole segment is parallel to the centerline of the insulation component.

[0015] Furthermore, there are multiple first channels, which are spaced apart around the center line of the flow guiding component; there are also multiple second channels, which are spaced apart around the center line of the insulation component; wherein, the multiple second channels are connected to the multiple first channels in a one-to-one correspondence.

[0016] Furthermore, the flow cross-sections of both the first and second channels are circular, wherein the diameter of the flow cross-section of the first channel is 8mm to 12mm, and the diameter of the flow cross-section of the second channel is 8mm to 12mm.

[0017] Furthermore, the flow cross-sections of both the first and second channels are circular, with the diameter of the flow cross-section of the first channel being 10 mm and the diameter of the flow cross-section of the second channel being 10 mm.

[0018] According to the technical solution of this invention, the single crystal furnace of this invention includes: a flow guiding component, which is vertically and flexibly arranged; a heat preservation component, which is sleeved outside the flow guiding component; a crucible component, which is located inside the heat preservation component and is rotatably and / or vertically arranged below the flow guiding component; and an exhaust channel, the first part of which is located on the flow guiding component, the second part of which is located on the heat preservation component, the inlet of which is located at the lower end of the flow guiding component and facing the interior of the crucible component, and the outlet of which is located on the heat preservation component and facing the exterior of the crucible component; wherein, when the upper end of the flow guiding component moves to overlap with the upper end of the heat preservation component, the first part and the second part of the exhaust channel are connected; when the upper end of the flow guiding component moves to separate from the upper end of the heat preservation component, the first part and the second part of the exhaust channel are disconnected. Thus, the single crystal furnace of the present invention, by setting an exhaust channel, can quickly exhaust the gas inside the crucible component to the outside of the crucible component, optimize the gas flow path, increase the exhaust efficiency of the gas inside the crucible component, effectively improve the gas flow efficiency during the single crystal growth process, ensure the uniformity of temperature and pressure inside the furnace, improve the stability and uniformity of single crystal growth, thereby improving the quality and efficiency of single crystal growth. It solves the problem of low exhaust efficiency in the crucible of existing single crystal furnaces, reduces the accumulation of impurities above the liquid surface in the crucible component, thereby improving the quality of the generated crystal rod, reducing energy consumption, lowering production costs, enhancing the stability and reliability of the single crystal furnace, and bringing significant economic benefits to industrial production. Attached Figure Description

[0019] The accompanying drawings, which form part of this application, are used to provide a further understanding of the invention. The illustrative embodiments of the invention and their descriptions are used to explain the invention and do not constitute an undue limitation of the invention. In the drawings:

[0020] Figure 1 A schematic diagram of an embodiment of the single crystal furnace according to the present invention is shown;

[0021] Figure 2 It shows Figure 1 A cross-sectional view of the single crystal furnace shown;

[0022] Figure 3 It shows Figure 2 A magnified view of part A of the single crystal furnace shown;

[0023] Figure 4 It shows Figure 2 The enlarged view of point A in the single crystal furnace shown, excluding the insulation components;

[0024] Figure 5 It shows Figure 2 The diagram shows a magnified view of point A in the single crystal furnace, excluding the flow guiding components.

[0025] The above figures include the following reference numerals:

[0026] 1. Flow guiding component; 11. First flow guiding tube;

[0027] 2. Thermal insulation components; 21. Annular thermal insulation cover; 22. Thermal insulation cylinder; 23. Liner ring;

[0028] 3. Main furnace chamber shell; 4. Crucible components; 5. Main heating components; 6. Water cooling components;

[0029] 110. Air inlet; 120. Air outlet;

[0030] 10. First channel; 101. First borehole section; 102. Second borehole section; 103. Third borehole section; 111. First inlet; 112. First outlet;

[0031] 20. Second channel; 201. Fourth bore section; 202. Fifth bore section; 203. Sixth bore section; 211. Second inlet; 212. Second outlet. Detailed Implementation

[0032] It should be noted that, unless otherwise specified, the embodiments and features described in this application can be combined with each other. The present invention will now be described in detail with reference to the accompanying drawings and embodiments.

[0033] like Figures 1 to 5 As shown, the present invention provides a single crystal furnace, comprising: a flow guiding component 1, which is vertically and vertically arranged; a heat insulation component 2, which is sleeved outside the flow guiding component 1; a crucible component 4, which is located inside the heat insulation component 2 and is rotatably and / or vertically arranged below the flow guiding component 1; and an exhaust channel, the first part of which is located on the flow guiding component 1 and the second part of which is located on the heat insulation component 2. The inlet 110 of the exhaust channel is located at the lower end of the flow guiding component 1 and faces the interior of the crucible component 4, and the outlet 120 of the exhaust channel is located on the heat insulation component 2 and faces the exterior of the crucible component 4. When the upper end of the flow guiding component 1 moves to overlap with the upper end of the heat insulation component 2, the first part and the second part of the exhaust channel are connected; when the upper end of the flow guiding component 1 moves to separate from the upper end of the heat insulation component 2, the first part and the second part of the exhaust channel are disconnected.

[0034] In this way, the single crystal furnace of the present invention, by setting an exhaust channel, can quickly exhaust the gas inside the crucible component 4 to the outside of the crucible component 4, optimize the gas flow path, increase the exhaust efficiency of the gas inside the crucible component 4, effectively improve the gas flow efficiency during the single crystal growth process, ensure the uniformity of temperature and pressure inside the furnace, improve the stability and uniformity of single crystal growth, thereby improving the quality and efficiency of single crystal growth, solving the problem of low exhaust efficiency in the crucible of the existing single crystal furnace, reducing the accumulation of impurities above the liquid surface inside the crucible component 4, thereby improving the quality of the generated crystal rod, reducing energy consumption, lowering production costs, enhancing the stability and reliability of the single crystal furnace, and bringing significant economic benefits to industrial production.

[0035] The specific technical effects of the exhaust channel configuration in the single crystal furnace of the present invention are as follows:

[0036] (1) Significantly improved exhaust efficiency: The exhaust channel is cleverly set on the flow guide component 1 and the heat preservation component 2, which effectively improves the gas flow path and improves the exhaust efficiency. During the crystal pulling process, even as the liquid surface of the crucible component 4 gradually approaches the flow guide component 1, the gas path of the single crystal furnace will narrow. At this time, due to the pressure difference between the two ends of the exhaust channel, the impurities and volatiles in the crucible component 4 will reach the exhaust outlet 120 through the inlet 110 of the exhaust channel, so that the single crystal furnace can still maintain good airflow circulation and avoid the problem of exhaust obstruction.

[0037] (2) Significant reduction in impurity enrichment: It can remove volatiles and impurities in time, significantly reducing the enrichment of impurities above the liquid surface, reducing the impurity traces on the surface of the generated crystal rod, and effectively reducing the defect rate of the crystal rod.

[0038] (3) Significantly improved crystal rod quality: Reduced interference of impurities on the crystal rod growth environment, thereby improving the lifespan and electrical performance of the crystal rod, enabling it to exhibit better conversion efficiency in the subsequent photovoltaic cell manufacturing process.

[0039] (4) Good process compatibility: The exhaust channel design of the present invention is highly compatible with the existing single crystal furnace hot field design and crystal pulling process. It does not require large-scale modification of existing equipment, is easy to promote and implement, and lowers the threshold for technology application.

[0040] (5) Significant economic benefits: By improving the quality of crystal rods, the defect rate is reduced, the scrap cost is lowered, and the production efficiency and economic benefits of monocrystalline solar cells are improved.

[0041] like Figures 2 to 5As shown, the single crystal furnace also includes: a main furnace chamber shell 3, with the flow guiding component 1 and the heat insulation component 2 both located inside the main furnace chamber shell 3; a main heating component 5, located inside the heat insulation component 2 and arranged around the crucible component 4 on its periphery outside the crucible component 4; wherein, the gas outlet 120 is arranged facing the main heating component 5. This optimizes the distribution of the thermal field and airflow, improves thermal efficiency and gas flow efficiency, helps to improve the efficiency and quality of single crystal growth, shortens the single crystal growth cycle, and reduces energy consumption. It is particularly suitable for large-scale industrial production environments, can significantly improve production efficiency, reduce operating costs, and is suitable for the high-efficiency production of semiconductor devices and photovoltaic modules.

[0042] Specifically, the present invention positions the air outlet 120 toward the main heating component 5, which has the following technical effects:

[0043] (1) Reduce the temperature of the main heating component 5: Setting the gas outlet 120 toward the main heating component 5 can promote the effective discharge of gas in the crucible component 4, thereby reducing the accumulation of heat in the crucible component 4. Moreover, the temperature of the gas discharged from the gas outlet is lower than the temperature of the main heating component 5, thus reducing the temperature of the main heating component 5. This helps to reduce the load on the main heating component 5, achieve more stable temperature control, and thus reduce the overall energy consumption and operating costs.

[0044] (2) Reduce silicon carbide adhesion: The main heating component 5 is made of carbon. Since the gas discharged from the outlet can reduce the temperature of the main heating component 5, the formation of silicon carbide on the main heating component 5 can be reduced, thus alleviating the problem of uneven heating caused by silicon carbide and improving the heating efficiency and uniformity of crystal growth.

[0045] (3) Improved lifespan of main heating element 5: The orientation of the air outlet 120 toward the main heating element 5 reduces silicon carbide formation, thus reducing corrosion and wear of the main heating element 5 and significantly improving its lifespan. In addition, more uniform heating conditions also help reduce thermal stress, further extending the lifespan of the main heating element 5.

[0046] (4) Optimize the thermal field design: By setting the air outlet to 120° orientation, the thermal field design was optimized, realizing the reasonable coordination of airflow, heat flow and material flow, reducing unnecessary heat loss, and improving the efficiency and controllability of single crystal growth.

[0047] like Figures 3 to 5 As shown, the single crystal furnace also includes a water-cooling component 6 disposed within the flow guiding component 1.

[0048] like Figures 3 to 5As shown, the exhaust channel includes: a first channel 10, which is provided on the flow guiding component 1, with a first inlet 111 and a first outlet 112 located at the lower and upper ends of the flow guiding component 1, respectively; and a second channel 20, which is provided on the heat insulation component 2, with a second inlet 211 and a second outlet 212 located at the upper and middle ends of the heat insulation component 2, respectively. When the upper end of the flow guiding component 1 moves to overlap with the upper end of the heat insulation component 2, the first outlet 112 and the second inlet 211 are connected. The first inlet 111 is an air inlet 110, and the second outlet 212 is an air outlet 120. This achieves the purpose of drawing the gas inside the crucible component 4 out of the crucible component 4, enabling more precise control of the furnace pressure and temperature, and effectively avoiding single crystal defects caused by temperature and pressure fluctuations during the growth process. This is particularly advantageous for single crystal growth processes requiring high-precision control, such as single crystal silicon growth in semiconductor device manufacturing, improving the quality of single crystal materials.

[0049] like Figures 3 to 5 As shown, the flow guiding component 1 includes a first flow guiding cylinder 11 and a second flow guiding cylinder (not shown in the figure), with the first flow guiding cylinder 11 sleeved outside the second flow guiding cylinder; wherein, the first channel 10 is disposed on the first flow guiding cylinder 11. This double-layer flow guiding cylinder design can effectively isolate the influence of the external environment on the furnace growth process, improve the purity and consistency of single crystal growth, and the first channel 10 being disposed on the outer first flow guiding cylinder 11 facilitates its connection with the second channel 20, reducing the processing steps of the first channel 10. Figure 3 and Figure 4 As shown, the first channel 10 includes a first aperture segment 101, a second aperture segment 102, and a third aperture segment 103 connected sequentially along the gas flow direction. The distance between the first aperture segment 101 and the centerline of the flow guiding component 1 gradually decreases from top to bottom. The second aperture segment 102 is parallel to the centerline of the flow guiding component 1. A portion of the third aperture segment 103 is perpendicular to the centerline of the flow guiding component 1, and another portion of the third aperture segment 103 is parallel to the centerline of the flow guiding component 1. This effectively improves the uniformity of gas flow and reduces dead zones, significantly improving the efficiency and quality of single crystal growth. It is suitable for production environments requiring large-scale, high-efficiency, and high-quality single crystal materials, such as the manufacturing of semiconductor devices and photovoltaic modules, reducing production costs and enhancing the market competitiveness of products.

[0050] like Figure 3 and Figure 5As shown, the heat insulation component 2 includes an annular heat insulation cover 21, a heat insulation cylinder 22, and a liner ring 23 arranged sequentially from top to bottom. The inner side of the upper end of the annular heat insulation cover 21 is connected to the flow guiding component 1, the outer side of the lower end of the annular heat insulation cover 21 is connected to the upper end of the heat insulation cylinder 22, and the lower end of the heat insulation cylinder 22 is connected to the inner side of the upper end of the liner ring 23. The second channel 20 includes a fourth hole section 201, a fifth hole section 202, and a sixth hole section 203 connected sequentially along the gas flow direction. The fourth hole section 201, the fifth hole section 202, and the sixth hole section 203 are correspondingly arranged on the annular heat insulation cover 21, the heat insulation cylinder 22, and the liner ring 23.

[0051] like Figure 3 and Figure 5 As shown, the insulation component 2 also includes a lower insulation cover disposed below the bushing 23.

[0052] like Figure 3 and Figure 5 As shown, a portion of the fourth hole segment 201 is parallel to the centerline of the insulation component 2, while another portion of the fourth hole segment 201 is perpendicular to the centerline of the insulation component 2; the fifth hole segment 202 is parallel to the centerline of the insulation component 2; and the sixth hole segment 203 is parallel to the centerline of the insulation component 2. This ensures uniform gas distribution within the insulation component, effectively reducing the temperature gradient, improving the uniformity and stability of single crystal growth, and making it suitable for single crystal growth environments requiring high-precision temperature control. This significantly improves product performance and reliability while reducing production costs.

[0053] Specifically, there are multiple first channels 10, which are spaced apart around the center line of the flow guiding component 1; there are also multiple second channels 20, which are spaced apart around the center line of the heat insulation component 2; wherein each of the multiple second channels 20 is connected to a corresponding multiple of the first channels 10. By increasing the number of first channels 10 and second channels 20, the uniformity and controllability of gas flow within the single crystal furnace can be further improved. This is of great significance for industrial applications requiring large-scale, high-efficiency single crystal growth, such as the silicon single crystal growth of solar panels, reducing production costs, improving energy conversion efficiency, and promoting the development of clean energy.

[0054] Preferably, the flow cross-sections of both the first channel 10 and the second channel 20 are circular, with the diameter of the first channel 10's flow cross-section ranging from 8mm to 12mm, and the diameter of the second channel 20's flow cross-section ranging from 8mm to 12mm. This selection of aperture range can reduce resistance during gas flow while ensuring gas flow efficiency, thereby improving the operating efficiency and stability of the single crystal furnace, enhancing its adaptability and production efficiency. It is suitable for single crystal growth processes of various scales, from small-scale laboratory research to large-scale industrial production, such as laboratory research projects and industrial-grade semiconductor material manufacturing.

[0055] More preferably, the flow cross-sections of both the first channel 10 and the second channel 20 are circular, with the diameter of the flow cross-section of the first channel 10 being 10 mm and the diameter of the flow cross-section of the second channel 20 being 10 mm. This precise control of the 10 mm aperture optimizes the gas flow path, reduces energy consumption, lowers production costs, and enhances the stability and reliability of the single crystal furnace, bringing significant economic benefits to industrial production. It is particularly suitable for single crystal growth applications that require a balance between cost and efficiency, such as the silicon single crystal production for consumer electronics, achieving a perfect balance between cost and efficiency and driving technological progress and product innovation in the consumer electronics industry.

[0056] As can be seen from the above description, the embodiments of the present invention achieve the following technical effects:

[0057] The single crystal furnace of the present invention includes: a flow guiding component 1, which is vertically and vertically disposed; a heat preservation component 2, which is sleeved outside the flow guiding component 1; a crucible component 4, which is located inside the heat preservation component 2 and is rotatably and / or vertically disposed below the flow guiding component 1; and an exhaust channel, the first part of which is located on the flow guiding component 1 and the second part of which is located on the heat preservation component 2. The inlet 110 of the exhaust channel is located at the lower end of the flow guiding component 1 and faces the interior of the crucible component 4, and the outlet 120 of the exhaust channel is located on the heat preservation component 2 and faces the exterior of the crucible component 4. When the upper end of the flow guiding component 1 moves to overlap with the upper end of the heat preservation component 2, the first part and the second part of the exhaust channel are connected; when the upper end of the flow guiding component 1 moves to separate from the upper end of the heat preservation component 2, the first part and the second part of the exhaust channel are disconnected. In this way, the single crystal furnace of the present invention, by setting an exhaust channel, can quickly exhaust the gas inside the crucible component 4 to the outside of the crucible component 4, optimize the gas flow path, increase the exhaust efficiency of the gas inside the crucible component 4, effectively improve the gas flow efficiency during the single crystal growth process, ensure the uniformity of temperature and pressure inside the furnace, improve the stability and uniformity of single crystal growth, thereby improving the quality and efficiency of single crystal growth, solving the problem of low exhaust efficiency in the crucible of the existing single crystal furnace, reducing the accumulation of impurities above the liquid surface inside the crucible component 4, thereby improving the quality of the generated crystal rod, reducing energy consumption, lowering production costs, enhancing the stability and reliability of the single crystal furnace, and bringing significant economic benefits to industrial production.

[0058] It should be noted that the terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit the exemplary embodiments according to this application. As used herein, the singular form is intended to include the plural form as well, unless the context clearly indicates otherwise. Furthermore, it should be understood that when the terms "comprising" and / or "including" are used in this specification, they indicate the presence of features, steps, operations, devices, components, and / or combinations thereof.

[0059] Unless otherwise specifically stated, the relative arrangement, numerical expressions, and values ​​of the components and steps described in these embodiments do not limit the scope of this application. It should also be understood that, for ease of description, the dimensions of the various parts shown in the drawings are not drawn to actual scale. Techniques, methods, and devices known to those skilled in the art may not be discussed in detail, but where appropriate, such techniques, methods, and devices should be considered part of the specification. In all examples shown and discussed herein, any specific values ​​should be interpreted as merely exemplary and not as limitations. Therefore, other examples of exemplary embodiments may have different values. It should be noted that similar reference numerals and letters in the following drawings denote similar items; therefore, once an item is defined in one drawing, it need not be further discussed in subsequent drawings.

[0060] In the description of this application, it should be understood that the orientation or positional relationship indicated by directional terms such as "front, back, up, down, left, right", "horizontal, vertical, horizontal" and "top, bottom" is usually based on the orientation or positional relationship shown in the accompanying drawings, and is only for the convenience of describing this application and simplifying the description. Unless otherwise stated, these directional terms do not indicate or imply that the device or element referred to must have a specific orientation or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation on the scope of protection of this application; the directional terms "inner" and "outer" refer to the inner and outer contours relative to the outline of each component itself.

[0061] For ease of description, spatial relative terms such as "above," "on top of," "on the upper surface of," "above," etc., are used herein to describe the spatial positional relationship of a device or feature as shown in the figures to other devices or features. It should be understood that spatial relative terms are intended to encompass different orientations in use or operation beyond the orientation of the device as described in the figures. For example, if the device in the figures were inverted, a device described as "above" or "on top of" other devices or structures would subsequently be positioned as "below" or "under" other devices or structures. Thus, the exemplary term "above" can include both "above" and "below." The device may also be positioned in other different ways (rotated 90 degrees or in other orientations), and the spatial relative descriptions used herein will be interpreted accordingly.

[0062] Furthermore, it should be noted that the use of terms such as "first" and "second" to define components is merely for the purpose of distinguishing the corresponding components. Unless otherwise stated, the above terms have no special meaning and therefore cannot be construed as limiting the scope of protection of this application.

[0063] The above description is merely a preferred embodiment of the present invention and is not intended to limit the invention. Various modifications and variations can be made to the present invention by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention should be included within the scope of protection of the present invention.

Claims

1. A single crystal furnace, characterized in that, include: A flow guiding component (1) is provided that can be raised and lowered; Thermal insulation component (2), which is sleeved outside the flow guiding component (1); A crucible component (4) is located inside the heat preservation component (2), and the crucible component (4) is rotatably and / or vertically arranged below the flow guide component (1); The exhaust channel has a first part located on the flow guide (1) and a second part located on the heat insulation component (2). The air inlet (110) of the exhaust channel is located at the lower end of the flow guide (1) and faces the interior of the crucible component (4). The air outlet (120) of the exhaust channel is located on the heat insulation component (2) and faces the outside of the crucible component (4). When the upper end of the flow guide (1) moves to overlap with the upper end of the heat insulation component (2), the first part and the second part of the exhaust channel are connected; when the upper end of the flow guide (1) moves to separate from the upper end of the heat insulation component (2), the first part and the second part of the exhaust channel are disconnected.

2. The single crystal furnace according to claim 1, characterized in that, The single crystal furnace also includes: The main furnace chamber shell (3) is located inside the main furnace chamber shell (3), where the flow guiding component (1) and the heat insulation component (2) are both located. The main heating component (5) is located inside the heat preservation component (2) and is arranged around the periphery of the crucible component (4) outside the crucible component (4); The air outlet (120) is positioned facing the main heating component (5).

3. The single crystal furnace according to claim 1, characterized in that, The exhaust passage includes: The first channel (10) is provided on the flow guiding component (1), and the first inlet (111) and the first outlet (112) of the first channel (10) are located at the lower end and the upper end of the flow guiding component (1), respectively. The second channel (20) is provided on the heat insulation component (2), and the second inlet (211) and the second outlet (212) of the second channel (20) are located at the upper end and the middle of the heat insulation component (2), respectively. When the upper end of the flow guiding component (1) moves to overlap with the upper end of the heat insulation component (2), the first outlet (112) and the second inlet (211) are connected; the first inlet (111) is the air inlet (110), and the second outlet (212) is the air outlet (120).

4. The single crystal furnace according to claim 3, characterized in that, The flow guiding component (1) includes a first flow guiding tube (11) and a second flow guiding tube, wherein the first flow guiding tube (11) is sleeved on the second flow guiding tube; wherein the first channel (10) is disposed on the first flow guiding tube (11).

5. The single crystal furnace according to claim 3, characterized in that, The first channel (10) includes a first orifice section (101), a second orifice section (102), and a third orifice section (103) connected sequentially along the gas flow direction; wherein, The distance between the first orifice (101) and the centerline of the flow guide (1) gradually decreases from top to bottom; and / or The second orifice (102) is parallel to the centerline of the flow guide (1); and / or A portion of the third orifice (103) is perpendicular to the centerline of the flow guide (1), and another portion of the third orifice (103) is parallel to the centerline of the flow guide (1).

6. The single crystal furnace according to claim 3, characterized in that, The heat insulation component (2) includes an annular heat insulation cover (21), a heat insulation cylinder (22), and a liner (23) arranged sequentially from top to bottom. The inner side of the upper end of the annular heat insulation cover (21) is connected to the flow guiding component (1), the outer side of the lower end of the annular heat insulation cover (21) is connected to the upper end of the heat insulation cylinder (22), and the lower end of the heat insulation cylinder (22) is connected to the inner side of the upper end of the liner (23). The second channel (20) includes a fourth hole section (201), a fifth hole section (202), and a sixth hole section (203) arranged sequentially along the gas flow direction. The fourth hole section (201), the fifth hole section (202), and the sixth hole section (203) are arranged one-to-one with the annular heat insulation cover (21), the heat insulation cylinder (22), and the liner (23).

7. The single crystal furnace according to claim 6, characterized in that, A portion of the fourth hole segment (201) is parallel to the centerline of the insulation component (2), and another portion of the fourth hole segment (201) is perpendicular to the centerline of the insulation component (2); and / or The fifth hole segment (202) is parallel to the centerline of the insulation component (2); and / or The sixth hole segment (203) is parallel to the center line of the heat insulation component (2).

8. The single crystal furnace according to any one of claims 3 to 7, characterized in that, The number of the first channels (10) is multiple, and the multiple first channels (10) are arranged at intervals around the center line of the flow guide (1); The number of the second channels (20) is multiple, and the multiple second channels (20) are arranged at intervals around the center line of the heat insulation component (2); In this configuration, multiple second channels (20) are connected one-to-one with multiple first channels (10).

9. The single crystal furnace according to any one of claims 3 to 7, characterized in that, The flow cross-sections of the first channel (10) and the second channel (20) are both circular, wherein, The diameter of the flow cross section of the first channel (10) is 8 mm to 12 mm; The diameter of the flow cross section of the second channel (20) is 8 mm to 12 mm.

10. The single crystal furnace according to any one of claims 3 to 7, characterized in that, The flow cross-sections of the first channel (10) and the second channel (20) are both circular, wherein, The diameter of the flow cross section of the first channel (10) is 10 mm; The diameter of the flow cross section of the second channel (20) is 10 mm.

Images