Laser chip light source

Abstract

The application discloses a laser chip light source, and relates to the technical field of illumination. The laser chip light source comprises a substrate, at least one light emitting unit and a light-transmitting layer. The light emitting units are arranged on the front surface of the substrate. Each light emitting unit comprises a pad and a laser chip arranged in sequence in the direction away from the front surface of the substrate. In each light emitting unit, the pad comprises a circuit pad and a fixing pad. The laser chip is fixed to the fixing pad and is electrically connected with the circuit pad. The light-transmitting layer is wrapped on the corresponding laser chip or covers the plurality of laser chips. The laser chip light source provided by the technical scheme has high light emitting efficiency. The laser chip can work under the condition of high power, and can be well applied to the demand of the high-power and high-luminous lighting market.

Description

Technical Field

[0001] This application relates to the field of lighting technology, and in particular to a laser chip light source. Background Technology

[0002] Currently, the most widely used LED lighting products on the market use LED chips as their light-emitting elements. As power increases, the heat generated also increases. Excessive heat can easily lead to a decrease in the light output of the LED chip, or even LED chip failure. Therefore, existing LED lighting products have a power of no more than 200W and a luminous efficiency of 100-120lm / W, which is insufficient to meet the demands of the high-power, high-lumen market, especially limiting their application in large-area scenarios such as stadiums, ports, docks, and high-mast lighting.

[0003] Application content

[0004] The main objective of this application is to propose a laser chip light source that aims to solve the problems of low power and low light extraction efficiency in existing LED lighting products.

[0005] To achieve the above objectives, this application proposes a laser chip light source, comprising:

[0006] The substrate has a front side and a back side, the front side being disposed corresponding to the light-emitting side;

[0007] At least one light-emitting unit is disposed on the front side of the substrate. Each light-emitting unit includes a pad and a laser chip sequentially arranged in a direction away from the front side of the substrate. In each light-emitting unit, the pad includes a circuit pad and a fixing pad. The laser chip is fixed to the fixing pad and electrically connected to the circuit pad.

[0008] A light-transmitting layer is wrapped around or covers multiple laser chips to correspond to a first packaging state or a second packaging state.

[0009] In the first encapsulation state, there are multiple light-transmitting layers, which are wrapped around multiple corresponding laser chips. The raw materials for preparing the light-transmitting layers include epoxy resin AB glue, hollow glass microspheres, and phosphor.

[0010] In the second encapsulation state, the light-transmitting layer is plate-shaped and is used to cover multiple laser chips. The raw materials for preparing the light-transmitting layer include hollow alumina spheres, phosphors, and binders.

[0011] In one embodiment, when in the first encapsulation state, the light-transmitting layer comprises the following raw materials in parts by weight: 80-91 parts of epoxy resin AB glue and 10-21 parts of powder;

[0012] The powder comprises hollow glass microspheres and fluorescent powder, and the weight ratio of the hollow glass microspheres to the fluorescent powder is (22-26):(4-8).

[0013] The hollow glass microspheres have a particle size of 30–70 μm, and the phosphor has a particle size of 1–20 μm.

[0014] In one embodiment, when in the second encapsulation state, the light-transmitting layer comprises the following raw materials in parts by weight: 40-60 parts powder, 0.2-0.3 parts sintering modifier, 7-8 parts sintering aid, 15-25 parts binder, 20-30 parts deionized water, and 1-2 parts dispersant.

[0015] Plasticizer 0.6-1.2 parts, defoamer 0.2-0.6 parts;

[0016] The powder comprises hollow alumina spheres, Al2O3, Y2O3, CeO2, ZnO and ZrO2, and the weight ratio of the hollow alumina spheres, Al2O3, Y2O3, CeO2, ZnO and ZrO2 is (58-82):(10-12):(5-8):(0.05-0.15):(0.04-0.07):(0.20-0.30).

[0017] In one embodiment, the thickness of the light-transmitting layer is 0.1 to 0.4 mm.

[0018] In one embodiment, in each of the light-emitting units, the circuit pad includes a positive pad and a negative pad, and the positive electrode of the laser chip is electrically connected to the positive pad through a gold wire, and the negative electrode is electrically connected to the negative pad through a gold wire.

[0019] In one embodiment, each of the light-emitting units further includes a set of electrode terminals and a set of conductive holes. The set of electrode terminals includes a positive terminal and a negative terminal disposed on the back side of the substrate, and the set of conductive holes includes a positive conductive hole and a negative conductive hole penetrating the substrate.

[0020] In each of the light-emitting units, the positive electrode pad is electrically connected to the positive terminal through the positive electrode conductive hole, and the negative electrode pad is electrically connected to the negative terminal through the negative electrode conductive hole.

[0021] In one embodiment, in each of the light-emitting units, the positive electrode pad and the negative electrode pad define an inner perimeter region, the fixed pad is disposed in the inner perimeter region, and the laser chip has a connection pad corresponding to the fixed pad on the side near the substrate.

[0022] In one embodiment, the fixed pad and the connecting pad are made of a gold-tin alloy.

[0023] In one embodiment, the laser chip is a blue laser chip; and / or,

[0024] The plurality of light-emitting units are connected in series or in parallel; and / or,

[0025] The multiple light-emitting units are connected in series or in parallel.

[0026] In one embodiment, the substrate is selected from an alumina substrate, an aluminum nitride substrate, and a sapphire substrate.

[0027] In the technical solution of this application, when the circuit pads are connected to the power supply, the laser chip emits a blue parallel beam of light. This blue beam illuminates the light-transmitting layer. In the first encapsulation state, the phosphor in the light-transmitting layer absorbs some of the blue light and emits yellow light. The yellow and blue light are complementary, forming white light. Due to its special structure and refractive index, the hollow glass microspheres can effectively scatter incident light. The hollow glass microspheres form scattering centers, allowing the light to be distributed more evenly in multiple directions. This ensures sufficient contact between the phosphor and blue light and allows the light to exit at a larger angle. The combination of hollow glass microspheres and phosphor can adjust both the color and the emission angle of the light, effectively improving the light extraction efficiency. Furthermore, the laser chip can operate under high-power conditions, making it well-suited for the needs of the high-power, high-lumen lighting market.

[0028] In its second encapsulation state, the fluorescent component in the light-transmitting layer absorbs some blue light and emits yellow light. The yellow and blue light complement each other, forming white light. After high-temperature sintering, the hollow alumina spheres form a unique structure with excellent light scattering characteristics. The hollow alumina spheres act as scattering centers, ensuring a more uniform distribution of light in multiple directions. This allows for sufficient contact between the fluorescent component and blue light, and also enables the light to exit at a wider angle. The combination of the hollow alumina spheres and the fluorescent component allows for adjustment of both the color and the emission angle of the light, effectively improving light extraction efficiency. Furthermore, the laser chip can operate under high-power conditions, making it well-suited for the demands of the high-power, high-lumen lighting market. Attached Figure Description

[0029] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on the structures shown in these drawings without creative effort.

[0030] Figure 1 A schematic diagram of the structure of a laser chip light source in the first packaged state provided in this application;

[0031] Figure 2 A schematic diagram of the structure of a laser chip light source in the second packaging state provided in this application;

[0032] Figure 3 for Figure 1 and Figure 2 A schematic diagram of the structure of the light-emitting unit in the diagram;

[0033] Figure 4 for Figure 3 A schematic diagram of the structure of the circuit pads and fixed pads in the diagram;

[0034] Figure 5 for Figure 3 A schematic diagram of the connection pads on the laser chip in the image;

[0035] Figure 6 for Figure 1 A three-dimensional structural diagram of the light-transmitting layer corresponding to a single light-emitting unit;

[0036] Figure 7 for Figure 2 A schematic diagram of the cross-sectional structure of the light-transmitting layer corresponding to a single light-emitting unit.

[0037] Explanation of icon numbers:

[0038] 1. Substrate; 11. Positive conductive hole; 12. Negative conductive hole; 13. Positive terminal; 14. Negative terminal; 2. Light-emitting unit; 21. Positive pad; 22. Negative pad; 23. Inner area; 24. Fixing pad; 25. Laser chip; 251. Connecting pad; 26. Gold wire; 3. Transparent layer.

[0039] The realization of the purpose, functional features and advantages of this application will be further explained in conjunction with the embodiments and with reference to the accompanying drawings. Detailed Implementation

[0040] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of the embodiments. Based on the embodiments of this application, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the scope of protection of this application.

[0041] It should be noted that if the embodiments of this application involve directional indicators (such as up, down, left, right, front, back, etc.), the directional indicators are only used to explain the relative positional relationship and movement of the components in a specific posture. If the specific posture changes, the directional indicators will also change accordingly.

[0042] Furthermore, if the embodiments of this application involve descriptions such as "first" or "second," these descriptions are for descriptive purposes only and should not be construed as indicating or implying their relative importance or implicitly specifying the number of technical features indicated. Therefore, a feature defined with "first" or "second" may explicitly or implicitly include at least one of those features. Additionally, the use of "and / or" or "and / or" throughout the text includes three parallel solutions. For example, "A and / or B" includes solution A, solution B, or a solution that simultaneously satisfies A and B. Furthermore, the technical solutions of the various embodiments can be combined with each other, but this must be based on the ability of those skilled in the art to implement them. When the combination of technical solutions is contradictory or impossible to implement, it should be considered that such a combination of technical solutions does not exist and is not within the scope of protection claimed in this application.

[0043] Existing LED lighting products have a power output of no more than 200W and a luminous efficiency of 100-120lm / W, which is insufficient to meet the demands of the high-power, high-lumen market, especially in large-area applications such as stadiums, ports, docks, and high-mast lighting. Therefore, this application proposes a laser chip light source to address the problems of low power and low luminous efficiency in existing LED lighting products.

[0044] Please see Figures 1 to 4 In one embodiment of this application, the laser chip light source includes: a substrate 1, at least one light-emitting unit 2, and a light-transmitting layer 3. The substrate 1 has a front side and a back side, with the front side corresponding to the light-emitting side. A plurality of light-emitting units 2 are disposed on the front side of the substrate 1. Each light-emitting unit 2 includes a pad and a laser chip 25 arranged sequentially in a direction away from the front side of the substrate 1. In each light-emitting unit 2, the pad includes a circuit pad and a fixing pad 24. The laser chip 25 is fixed to the fixing pad 24 and electrically connected to the circuit pad. The light-transmitting layer 3 wraps around or covers the corresponding laser chip 25 or multiple laser chips 25 to correspond to a first packaging state or a second packaging state.

[0045] Among them, see Figure 1 When in the first encapsulation state, there are multiple light-transmitting layers 3, and multiple light-transmitting layers 3 are wrapped around multiple corresponding laser chips 25. The raw materials for preparing the light-transmitting layers 3 include epoxy resin AB glue, hollow glass microspheres and phosphor.

[0046] See Figure 2 When in the second encapsulation state, the light-transmitting layer 3 is plate-shaped and is used to cover the multiple laser chips 25. The raw materials for preparing the light-transmitting layer 3 include hollow alumina spheres, fluorescent material and binder.

[0047] In the technical solution of this application, when the circuit pads are connected to the power supply, the laser chip 25 emits a parallel blue beam of 450-460nm. This blue beam illuminates the light-transmitting layer 3. In the first encapsulation state, the phosphor in the light-transmitting layer 3 absorbs some of the blue light and emits yellow light. The yellow and blue light are complementary, forming white light. Due to its special structure and refractive index, the hollow glass microspheres can effectively scatter incident light. The hollow glass microspheres form scattering centers, resulting in a more uniform distribution of light in multiple directions. This allows for sufficient contact between the phosphor and blue light, and also allows the light to exit at a larger angle. The combination of hollow glass microspheres and phosphor can adjust both the color and the emission angle of the light, effectively improving the light extraction efficiency. Furthermore, the laser chip 25 can operate under high-power conditions, making it well-suited for the needs of the high-power, high-lumen lighting market.

[0048] In the second encapsulation state, the fluorescent component in the light-transmitting layer 3 absorbs some blue light and emits yellow light. The yellow light and blue light complement each other to form white light. After high-temperature sintering, the hollow alumina spheres form a special structure with excellent light scattering characteristics. The hollow alumina spheres act as scattering centers, allowing light to be distributed more evenly in multiple directions. This ensures that the fluorescent component has sufficient contact with the blue light and that the light is emitted at a wider angle. The combination of the hollow alumina spheres and the fluorescent component can adjust both the color and the emission angle of the light, effectively improving the light extraction efficiency. Furthermore, the laser chip 25 can operate under high-power conditions, making it well-suited for the needs of the high-power, high-lumen lighting market.

[0049] It is understandable that both the circuit pads and the fixing pads 24 are located on the front side of the substrate 1.

[0050] In the embodiments of this application, when in the first encapsulation state, the light-transmitting layer 3 comprises the following raw materials in parts by weight: 80-91 parts of epoxy resin AB glue and 10-21 parts of powder; wherein, the powder comprises hollow glass microspheres and phosphor, and the weight ratio of the hollow glass microspheres to the phosphor is (22-26):(4-8); the particle size of the hollow glass microspheres is 30-70 μm, and the particle size of the phosphor is 1-20 μm.

[0051] In the technical solution of this application, epoxy resin AB glue, hollow glass microspheres, and phosphor are mixed in a specific ratio to form an encapsulation slurry. The slurry is then applied to the laser chip 25 using either dispensing or molding (compression molding, also known as compression molding). After curing, the slurry forms a bulb-shaped or hemispherical light-transmitting layer 3. (See reference...) Figure 6 .

[0052] It should be noted that the chemical composition of the hollow glass microspheres includes: SiO2 55–65 wt%, Al2O3 26–35 wt%, MgO 1–2 wt%, Fe2O3 1–5 wt%, TiO2 0.5–2 wt%, C 0.01–2 wt%, and Na2O and K2O 0.5–4 wt%, where wt% refers to mass percentage. The specific gravity of the hollow glass microspheres is 0.2–0.3 g / cm³. 3 Specific surface area is 1–1.5 m² 2 / g, with a light diffuser of 80-88%. The phosphor includes YAG:Ce 3+ Fluorescent powder. The raw material for epoxy resin AB adhesive is JL-510AB from Poly Adhesive. When using it, epoxy resin A and epoxy resin B are mixed at a mass ratio of 1:1 to form epoxy resin AB adhesive.

[0053] In the embodiments of this application, when in the second encapsulation state, the light-transmitting layer 3 comprises the following raw materials in parts by weight: 40-60 parts of powder, 0.2-0.3 parts of sintering modifier, 7-8 parts of sintering aid, 15-25 parts of binder, 20-30 parts of deionized water, 1-2 parts of dispersant, 0.6-1.2 parts of plasticizer, and 0.2-0.6 parts of defoamer; wherein the powder comprises alumina hollow spheres, Al2O3, Y2O3, CeO2, ZnO and ZrO2, and the weight ratio of the alumina hollow spheres, Al2O3, Y2O3, CeO2, ZnO and ZrO2 is (58-82):(10-12):(5-8):(0.05-0.15):(0.04-0.07):(0.20-0.30).

[0054] In the technical solution of this application, a slurry is formed by mixing powder, sintering modifier, sintering aid, binder, deionized water, dispersant, plasticizer, and defoamer, and then sintering it to obtain a transparent YAG fluorescent multiphase crystal, namely the light-transmitting layer 3. The YAG fluorescent multiphase crystal contains components with fluorescent properties.

[0055] It should be noted that the particle size of the hollow alumina spheres is 0.2–5 mm, and the bulk density is 0.5–1 g / cm³. 3 The sintering modifier includes CaO, the sintering aid includes ethyl quinate and MgO, the binder includes an aqueous PVA solution, the dispersant includes polyacrylamide, and the plasticizer includes polyethylene glycol.

[0056] In the embodiments of this application, the thickness of the light-transmitting layer 3 is 0.1–0.4 mm. Controlling the thickness of the light-transmitting layer 3 to 0.1–0.4 mm can better ensure the light extraction efficiency.

[0057] In the embodiments of this application, see Figure 3 In each of the light-emitting units 2, the circuit pads include a positive pad 21 and a negative pad 22. The positive electrode of the laser chip 25 is electrically connected to the positive pad 21 through a gold wire 26, and the negative electrode is electrically connected to the negative pad 22 through a gold wire 26.

[0058] By adopting the above technical solution, the positive electrode of the laser chip 25 is electrically connected to the positive electrode pad 21 through the gold wire 26, and the negative electrode of the laser chip 25 is electrically connected to the negative electrode pad 22 through the gold wire 26, which can better ensure the electrical connection between the laser chip 25 and the pad.

[0059] In the embodiments of this application, see Figure 7 Each of the light-emitting units 2 further includes a set of electrode terminals and a set of conductive holes. The set of electrode terminals includes a positive terminal 13 and a negative terminal 14 disposed on the back side of the substrate 1, and the set of conductive holes includes a positive conductive hole 11 and a negative conductive hole 12 penetrating the substrate 1.

[0060] In each of the light-emitting units 2, the positive electrode pad 21 is electrically connected to the positive terminal 13 through the positive electrode conductive hole 11, and the negative electrode pad 22 is electrically connected to the negative terminal 14 through the negative electrode conductive hole 12.

[0061] By adopting the above technical solution, the positive electrode of the laser chip 25 is connected to the positive electrode pad 21 through the gold wire 26, and the positive electrode pad 21 is connected to the positive terminal 13 through the positive electrode conductive hole 11. The negative electrode of the laser chip 25 is connected to the negative electrode pad 22 through the gold wire 26, and the negative electrode pad 22 is connected to the negative terminal 14 through the negative electrode conductive hole 12. The positive and negative terminals 14 can be connected by power, so that power can be provided to the laser chip 25 relatively stably.

[0062] In the embodiments of this application, see Figure 4 and Figure 5 In each of the light-emitting units 2, the positive electrode pad 21 and the negative electrode pad 22 define an inner perimeter region 23, the fixed pad 24 is disposed in the inner perimeter region 23, and the laser chip 25 has a connection pad 251 corresponding to the fixed pad 24 on the side close to the substrate 1.

[0063] By adopting the above technical solution, in each light-emitting unit 2, the positive electrode pad 21 and the negative electrode pad 22 define an inner perimeter region 23, and the fixing pad 24 is disposed in the inner perimeter region 23. In this way, the limited area of ​​the front side of the substrate 1 can be fully utilized, and the laser chip 25 can be stably fixed on the substrate 1. It should be noted that in each light-emitting unit 2, there are two fixing pads 24, one of which is disposed corresponding to the positive electrode pad 21, and the other of which is disposed corresponding to the negative electrode pad 22. It is understandable that there are also two connecting pads 251, which are set to correspond with two fixing pads 24. When fixing the laser chip 25 on the substrate 1, the connecting pads 251 on the laser chip 25 are aligned with the fixing pads 24 on the substrate 1, and eutectic bonding is performed through a eutectic furnace. The temperature of the eutectic furnace is at least one temperature zone between 300℃ and 340℃. The eutectic furnace is protected with nitrogen during the eutectic process. The eutectic time is 15 to 30 minutes. After eutectic bonding, the laser chip 25 is fixed on the substrate 1.

[0064] In the embodiments of this application, the fixed pad 24 and the connecting pad 251 are made of gold-tin alloy.

[0065] By adopting the above technical solution, the gold-tin alloy solder possesses high strength, high thermal conductivity, and good oxidation resistance. These characteristics enable the gold-tin alloy solder to maintain stable welding quality even under high temperature and harsh environments, avoiding fatigue fracture caused by temperature cycling, thus ensuring that the laser chip 25 is stably fixed on the substrate 1.

[0066] In the embodiments of this application, the laser chip 25 is a blue laser chip. The blue laser chip 25 has the characteristics of small size, high efficiency, and easy conversion into white light. By using the blue laser chip 25 in conjunction with the light-transmitting layer 3, high power and high light output efficiency can be achieved better, so as to better meet the lighting needs of large areas.

[0067] In the embodiments of this application, the plurality of light-emitting units 2 are connected in series or in parallel. The plurality of laser chips 25 are connected in series or in parallel to better meet diverse application requirements.

[0068] In the embodiments of this application, the substrate 1 is selected from one of an alumina substrate, an aluminum nitride substrate, and a sapphire substrate.

[0069] Performance Test Example 1

[0070] The method for fabricating a laser chip light source in its first packaged state includes the following steps:

[0071] S1. Preparation of encapsulation materials

[0072] (1) 21g of hollow glass microspheres with an average particle size of 50μm and 9g of YAG:Ce with an average particle size of 15μm were mixed. 3+ The phosphor (Intermed YAG-04 phosphor) is mixed and thoroughly stirred to form a powder. The chemical composition of the hollow glass microspheres includes: SiO2 61wt%, Al2O3 31.5wt%, MgO 1.5wt%, Fe2O3 3.5wt%, TiO2 1.25wt%, with the balance being Na2O and K2O. Here, wt% refers to the mass percentage; and the specific gravity of the hollow glass microspheres is 0.25 g / cm³. 3 Its specific surface area is 1.3 m². 2 / g, light diffusion rate is 85%;

[0073] (2) Mix epoxy resin A and epoxy resin B (JL-510AB of Polymer Adhesive) in a weight ratio of 1:1 and stir thoroughly to form epoxy resin AB.

[0074] (3) Take 16g of powder and 84g of epoxy resin AB glue, and add 16g of powder to 84g of epoxy resin AB glue. After stirring thoroughly, the encapsulation material is obtained.

[0075] S2. Provide an aluminum nitride substrate, on which 42 light-emitting units are arranged in series, wherein the laser chip in each light-emitting unit is a VCSEL blue laser chip.

[0076] S3. The encapsulation material obtained in step S1 is wrapped around the laser chip in each light-emitting unit in step S2 by dispensing adhesive. After the encapsulation material is cured, a hemispherical light-transmitting layer is formed to obtain the laser chip light source. The thickness of the light-transmitting layer is 0.1 mm.

[0077] Performance Test Example 2

[0078] The method for fabricating a laser chip light source in its second packaged state includes the following steps:

[0079] S1. Preparation of powder

[0080] 65g of hollow alumina spheres, 11g of Al₂O₃, 7g of Y₂O₃, 0.1g of CeO₂, 0.05g of ZnO, and 0.25g of ZrO₂ were mixed and stirred until fully combined to obtain a powder. The hollow alumina spheres contain Al₂O₃, with an Al₂O₃ mass percentage ≥99wt%. The particle size of the hollow alumina spheres is 0.2–0.5mm, and the bulk density is 0.95g / cm³. 3The purity of Al2O3, Y2O3, CeO2, ZnO and ZrO2 is 99.99%. The average particle size of Al2O3 is 0.8 μm, the average particle size of Y2O3 and CeO2 is 2 μm, and the average particle size of ZnO and ZrO2 is 0.5 μm.

[0081] S2, Preparation of adhesive

[0082] PVA was dissolved in deionized water and stirred until fully mixed to form a 15.0 wt% PVA aqueous solution, where wt% refers to the mass percentage and the degree of polymerization of PVA is 1750 ± 50.

[0083] S3. Add 41g of the powder obtained in step S1, 24g of deionized water, 0.26g of sintering modifier CaO, 7.5g of sintering aid, and 1.6g of polyacrylamide dispersant to a ball mill jar and disperse at 150 rpm for 20 hours. Then add 20g of the PVA aqueous solution obtained in step S2, 1g of polyethylene glycol (PEG-400) plasticizer, and 0.4g of polypropylene glycol (molecular weight 1200) defoamer to the ball mill jar and continue ball milling at 150 rpm for 22 hours to form a slurry. The polyacrylamide is cationic polyacrylamide with a molecular weight of 12 million; the sintering aid includes ethyl quinoline and MgO, with a mass ratio of ethyl quinoline to MgO of 10:1.

[0084] S4. Defoam the slurry obtained in step S3 under a vacuum of 0.08 MPa for 5 minutes. Place the defoamed slurry on a casting machine for casting at a casting speed of 10 mm / min. The cast blank is then placed in a drying chamber for drying. The drying temperature is divided into three stages: the first stage temperature is 50℃, the second stage temperature is 90℃, and the third stage temperature is 70℃, resulting in a cast blank with a thickness of 0.4 mm.

[0085] S5. After vacuum sealing the cast sheet obtained in step S4, place it in a warm isostatic press to increase the density. During the warm isostatic pressing process, the temperature is 60℃, the pressure is 120MPa, and the time is 5min. Then, pre-cut the sheet on a pre-cutting machine to obtain the blank.

[0086] S6. The blank obtained in step S5 is placed in a muffle furnace for heat treatment to remove the glue and form a raw blank. During the heat treatment, the temperature is increased to 600℃ at a heating rate of 0.5℃ / min and held at this temperature for 8 hours.

[0087] S7. The green blank obtained in step S6 is vacuum sintered at 1730℃ for 30h, and then annealed in air at 1400℃ for 20h. The blank is then removed to obtain a transparent YAG fluorescent multiphase crystal.

[0088] S8. Provide an aluminum nitride substrate, on which 42 light-emitting units are arranged in series, wherein the laser chip in each light-emitting unit is a VCSEL blue laser chip.

[0089] S9. The YAG fluorescent multiphase crystal obtained in step S7 is covered onto the laser chip in each light-emitting unit in step S8 by means of adhesive bonding to obtain a laser chip light source, wherein the length and width of the YAG fluorescent multiphase crystal are adapted to the size of the substrate.

[0090] Using a far-field integrating sphere, the luminous flux of the laser chip light source in Performance Test Example 1 and Performance Test Example 2 was measured under conditions of 40V and 0.3A. The light extraction efficiency was obtained from the luminous flux and power, where the light extraction efficiency = (luminous flux / power) × 100%, and power = voltage × current. The measured light extraction efficiency of Performance Test Example 1 was 283.2 lm / W, and that of Performance Test Example 2 was 291.1 lm / W.

[0091] The above description is merely an exemplary embodiment of this application and does not limit the patent scope of this application. Any equivalent structural transformations made based on the technical concept of this application and the contents of the specification and drawings of this application, or direct / indirect applications in other related technical fields, are included within the patent protection scope of this application.

Claims

1. A laser chip light source, characterized in that, include: The substrate has a front side and a back side, the front side being disposed corresponding to the light-emitting side; At least one light-emitting unit is disposed on the front side of the substrate. Each light-emitting unit includes a pad and a laser chip sequentially arranged in a direction away from the front side of the substrate. In each light-emitting unit, the pad includes a circuit pad and a fixing pad. The laser chip is fixed to the fixing pad and electrically connected to the circuit pad. A light-transmitting layer is wrapped around the corresponding laser chip or covers multiple laser chips to form a second encapsulation state; In the second packaging state, the light-transmitting layer is plate-shaped and is used to cover multiple laser chips. The raw materials for preparing the light-transmitting layer include hollow alumina spheres, phosphors, and binders. In the second encapsulation state, the light-transmitting layer comprises the following raw materials in parts by weight: 40-60 parts powder, 0.2-0.3 parts sintering modifier, 7-8 parts sintering aid, 15-25 parts binder, 20-30 parts deionized water, 1-2 parts dispersant, 0.6-1.2 parts plasticizer, and 0.2-0.6 parts defoamer; The powder comprises hollow alumina spheres, Al2O3, Y2O3, CeO2, ZnO, and ZrO2, and the weight ratio of the hollow alumina spheres, Al2O3, Y2O3, CeO2, ZnO, and ZrO2 is (58~82):(10~12):(5~8):(0.05~0.15):(0.04~0.07):(0.20~0.30). The alumina hollow spheres have a particle size of 0.2–5 mm and a bulk density of 0.5–1 g / cm³.

2. The laser chip light source as described in claim 1, characterized in that, The thickness of the light-transmitting layer is 0.1~0.4mm.

3. The laser chip light source as described in claim 1, characterized in that, In each of the light-emitting units, the circuit pad includes a positive pad and a negative pad. The positive electrode of the laser chip is electrically connected to the positive pad via a gold wire, and the negative electrode is electrically connected to the negative pad via a gold wire.

4. The laser chip light source as described in claim 3, characterized in that, Each of the light-emitting units further includes a set of electrode terminals and a set of conductive holes. The set of electrode terminals includes a positive terminal and a negative terminal disposed on the back side of the substrate, and the set of conductive holes includes a positive conductive hole and a negative conductive hole penetrating the substrate. In each of the light-emitting units, the positive electrode pad is electrically connected to the positive terminal through the positive electrode conductive hole, and the negative electrode pad is electrically connected to the negative terminal through the negative electrode conductive hole.

5. The laser chip light source as described in claim 3, characterized in that, In each of the light-emitting units, the positive electrode pad and the negative electrode pad define an inner perimeter region, the fixed pad is disposed in the inner perimeter region, and the laser chip has a connection pad corresponding to the fixed pad on the side near the substrate.

6. The laser chip light source as described in claim 5, characterized in that, The fixed pad and the connecting pad are made of gold-tin alloy.

7. The laser chip light source as described in claim 1, characterized in that, The laser chip is a blue laser chip; and / or, The multiple light-emitting units are connected in series or in parallel.

8. The laser chip light source as described in claim 1, characterized in that, The substrate is selected from one of the following: alumina substrate, aluminum nitride substrate, and sapphire substrate.

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