Display panel, display device and preparation method of display panel

Abstract

The invention relates to a display panel, a display device and a preparation method of the display panel. The display panel comprises a substrate; a substrate; the array layer is positioned on the substrate; the packaging layer is located on the side, away from the substrate, of the array layer and comprises an organic layer; the organic layer covers the display area and extends to a part of the non-display area; the retaining wall is located in the non-display area; the anti-overflow groove is located between the retaining wall and the display area; a plurality of protruding structures are arranged in the anti-overflow groove. According to the technical scheme, the risk that the organic layer in the packaging layer overflows in the preparation process is reduced, the packaging effect on the display panel is improved, the performance of the display panel is improved, and the service life of the display panel is prolonged.

Description

Technical Field

[0001] The present disclosure relates to the field of display technology, and in particular to a display panel, a display device, and a method for manufacturing a display panel. Background Art

[0002] With the continuous development of science and technology, various display devices have been widely used in people's daily life and work, bringing great convenience to people's lives.

[0003] Display panels are currently generally encapsulated using an inorganic layer-organic layer-inorganic layer structure. When preparing the organic layer, an inkjet printing (IJP) method can be used to form a liquid organic encapsulation material on the first inorganic layer, and the liquid organic encapsulation material is solidified to form an organic layer. However, the problem that follows is that the liquid organic encapsulation material is easy to overflow from the edge of the display panel due to the large amount of ink or the strong fluidity of the capillary phenomenon. Therefore, if the organic layer overflows during the preparation process, the effect of the thin film encapsulation will be greatly reduced, and the service life of the display panel will be reduced. Summary of the invention

[0004] In order to solve the above technical problems, the present disclosure provides a display panel, a display device and a method for preparing a display panel, which reduces the risk of overflow of the organic layer in the encapsulation layer during the preparation process, improves the encapsulation effect of the display panel, improves the performance of the display panel, and extends the service life of the display panel.

[0005] In a first aspect, the present disclosure provides a display panel, comprising:

[0006] substrate;

[0007] an array layer located on the substrate;

[0008] an encapsulation layer located on a side of the array layer away from the substrate, the encapsulation layer comprising an organic layer; the organic layer covers the display area and extends to a portion of the non-display area;

[0009] A retaining wall, located in the non-display area;

[0010] The anti-overflow groove is located between the retaining wall and the display area; the anti-overflow groove includes a plurality of protruding structures.

[0011] In a second aspect, the present disclosure further provides a display device, comprising the display panel described in the first aspect.

[0012] In a third aspect, the present disclosure further provides a method for preparing a display panel, which is suitable for forming the display panel as described in the first aspect, and the preparation method comprises:

[0013] forming an array layer on one side of the substrate;

[0014] An anti-overflow groove is formed in the non-display area of ​​the array layer; wherein a plurality of protruding structures are formed in the anti-overflow groove;

[0015] A retaining wall is formed above the array layer in the non-display area; wherein the anti-overflow groove is located between the retaining wall and the display area;

[0016] An encapsulation layer is formed on the array layer and the retaining wall, wherein the encapsulation layer includes an organic layer; the organic layer covers the display area and extends to a portion of the non-display area.

[0017] Compared with the prior art, the technical solution provided by the present invention has the following advantages:

[0018] The present disclosure provides a display panel, a display device, and a method for preparing the display panel, wherein the display panel includes a substrate; an array layer located on the substrate; an encapsulation layer located on the side of the array layer away from the substrate, wherein the encapsulation layer includes an organic layer; the organic layer covers the display area and extends to part of the non-display area; a retaining wall located in the non-display area; an anti-overflow groove located between the retaining wall and the display area; and the anti-overflow groove includes a plurality of protruding structures. The present disclosure arranges a plurality of protruding structures in the anti-overflow groove, thereby lengthening the flow distance of the liquid organic encapsulation material, and the protruding structures further hinder the climbing of the liquid organic encapsulation material, slowing down the flow of the liquid organic encapsulation material, and preventing the organic encapsulation material from overflowing into the non-display area. The retaining wall is conducive to further preventing the liquid organic encapsulation material from overflowing outward, thereby improving the encapsulation reliability of the encapsulation layer, improving the encapsulation effect on the display panel, improving the performance of the display panel, and extending the service life of the display panel. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the present disclosure and, together with the description, serve to explain the principles of the present disclosure.

[0020] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, for ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative labor.

[0021] Figure 1 A schematic diagram of a cross-sectional structure of a display panel provided in an embodiment of the present disclosure;

[0022] Figure 2 A schematic cross-sectional structure diagram of another display panel provided in an embodiment of the present disclosure;

[0023] Figure 3A schematic cross-sectional structure diagram of another display panel provided in an embodiment of the present disclosure;

[0024] Figure 4 A schematic cross-sectional structure diagram of another display panel provided in an embodiment of the present disclosure;

[0025] Figure 5 A schematic cross-sectional structure diagram of another display panel provided in an embodiment of the present disclosure;

[0026] Figure 6 A schematic cross-sectional structure diagram of another display panel provided in an embodiment of the present disclosure;

[0027] Figure 7 A schematic cross-sectional structure diagram of another display panel provided in an embodiment of the present disclosure;

[0028] Figure 8 A schematic cross-sectional structure diagram of another display panel provided in an embodiment of the present disclosure;

[0029] Fig. 9 A schematic cross-sectional structure diagram of another display panel provided in an embodiment of the present disclosure;

[0030] Fig.10 A schematic cross-sectional structure diagram of another display panel provided in an embodiment of the present disclosure;

[0031] Fig.11 A schematic cross-sectional structure diagram of another display panel provided in an embodiment of the present disclosure;

[0032] Fig.12 A schematic diagram of a process for preparing a display panel provided in an embodiment of the present disclosure;

[0033] Figure 13-Figure 25 for Fig.12 The cross-sectional structure diagram of each step in the method for preparing the display panel is shown. DETAILED DESCRIPTION

[0034] In order to more clearly understand the above-mentioned objectives, features and advantages of the present disclosure, the scheme of the present disclosure will be further described below. It should be noted that the embodiments of the present disclosure and the features in the embodiments can be combined with each other without conflict.

[0035] In the following description, many specific details are set forth to facilitate a full understanding of the present disclosure, but the present disclosure may also be implemented in other ways different from those described herein; it is obvious that the embodiments in the specification are only part of the embodiments of the present disclosure, rather than all of the embodiments.

[0036] In the related art, the display panel is currently generally encapsulated by an inorganic layer-organic layer-inorganic layer structure. When preparing the organic layer, a liquid organic encapsulation material can be formed on the first inorganic layer by ink jet printing (IJP), and the liquid organic encapsulation material is solidified to form an organic layer. However, the problem that follows is that the liquid organic encapsulation material is easy to overflow from the edge of the display panel due to the large amount of ink or the strong fluidity of capillary phenomenon. Therefore, if the organic layer overflows during the preparation process, it will greatly reduce the effect of thin film encapsulation and reduce the service life of the display panel.

[0037] In order to solve the above problems, the embodiment of the present disclosure provides a display panel, which includes a substrate; an array layer located on the substrate; an encapsulation layer located on the side of the array layer away from the substrate, the encapsulation layer including an organic layer; the organic layer covers the display area and extends to part of the non-display area; a retaining wall located in the non-display area; an anti-overflow groove located between the retaining wall and the display area; and the anti-overflow groove includes a plurality of protruding structures. Thus, the protruding structure lengthens the flow distance of the liquid organic encapsulation material, and the protruding structure further hinders the climbing of the liquid organic encapsulation material, slows down the flow of the liquid organic encapsulation material, and avoids the organic encapsulation material from overflowing into the non-display area. The retaining wall is conducive to further preventing the liquid organic encapsulation material from overflowing outward, thereby improving the encapsulation reliability of the encapsulation layer, improving the encapsulation effect of the display panel, improving the performance of the display panel, and extending the service life of the display panel.

[0038] Figure 1 FIG. 1 is a schematic diagram of a cross-sectional structure of a display panel provided by an embodiment of the present disclosure. Figure 1 As shown, the display panel includes a substrate 1, which is used to support and protect the film layer located thereon. The substrate 1 can be a rigid substrate, for example, the material of the substrate 1 is glass, or the substrate 1 can be a flexible substrate, for example, the material of the substrate 1 can include one or more combinations of polymer resins of polyethersulfone, polyacrylate, polyetherimide, polyethylene naphthalate, polyethylene terephthalate, polyphenylene sulfide, polyarylate, polyimide, polycarbonate and cellulose acetate propionate. The material of the substrate 1 is not specifically limited in the embodiments of the present disclosure.

[0039] The array layer 2 is located on one side of the substrate 1, and may include, for example, a plurality of light-emitting elements for realizing the display function of the display panel. The array layer 2 may include, for example, a pixel driving circuit arranged in an array. The pixel driving circuit refers to the smallest repeating unit of the circuit structure that drives the corresponding light-emitting element to emit light, such as a 2T1C circuit, a 7T1C circuit, a 7T2C circuit, etc. In this article, "2T1C circuit" refers to a pixel circuit that includes two thin-film transistors (T) and one capacitor (C), and other "7T1C circuits", "7T2C circuits", etc. are similar. The specific working principle is well known to those skilled in the art and will not be described in detail here.

[0040] The encapsulation layer 3 is located on the side of the array layer 2 facing away from the substrate 1. The encapsulation layer 3 may be a three-layer structure, for example, including a first inorganic layer, an organic layer, and a second inorganic layer. Figure 1 The structure is not specifically shown in the figure, and can be understood by referring to conventional thin film encapsulation technology. The first inorganic layer and the second inorganic layer play a role in water and oxygen barrier. The organic layer covers the display area AA and extends to part of the non-display area NA, playing the role of flattening, particle wrapping, stress release, and extending the path between inorganic holes. In the related art, an inkjet printing (Ink jet print, IJP) method is used to form a liquid organic encapsulation material on the first inorganic layer, and the liquid organic encapsulation material forms an organic layer after solidification. Based on the functional considerations of the inorganic layer, it is required that the surface of the first inorganic layer has good wettability and can be quickly spread and leveled, but the problem that follows is that the liquid organic encapsulation material is easy to overflow from the edge of the display panel due to the large amount of ink or the strong fluidity of capillary phenomenon. Therefore, if the organic layer overflows during the preparation process, it will greatly reduce the effect of thin film encapsulation and reduce the service life of the display panel.

[0041] Therefore, in the embodiment of the present disclosure, a retaining wall 4 is provided in the non-display area NA, and an anti-overflow groove 5 is provided between the retaining wall 4 and the display area AA, and a plurality of protrusion structures 6 are provided in the anti-overflow groove 5. Figure 1 3 convex structures 6 are shown as an example, and the embodiment of the present disclosure does not limit the number of convex structures 6. Before the liquid organic encapsulation material is solidified, the convex structure 6 lengthens the flow distance of the liquid organic encapsulation material, and the convex structure 6 further hinders the climbing of the liquid organic encapsulation material, slows down the flow of the liquid organic encapsulation material, and prevents the organic encapsulation material from overflowing into the non-display area NA. The retaining wall 4 is conducive to further preventing the liquid organic encapsulation material from overflowing. As a result, the encapsulation reliability of the encapsulation layer 3 is improved, the encapsulation effect of the display panel is improved, the performance of the display panel is improved, and the service life of the display panel is extended.

[0042] Figure 2 FIG. 1 is a schematic diagram of a cross-sectional structure of another display panel provided in an embodiment of the present disclosure. Figure 2As shown, the anti-overflow groove 5 includes multiple first sub-grooves 51 and multiple second sub-grooves 52; the multiple first sub-grooves 51 and the multiple second sub-grooves 52 form a protruding structure 6 on the array layer 2; the depths of the first sub-grooves 51 and the second sub-grooves 52 are different; the second sub-grooves 52 are located between adjacent first sub-grooves 51; the first sub-grooves 51 are not connected to the second sub-grooves 52; the side of the protruding structure 6 facing away from the substrate 1 is flush with the array layer 2 outside the anti-overflow groove 5.

[0043] Specifically, Figure 2 As shown, the anti-overflow groove 5 includes, for example, a plurality of first sub-grooves 51 and a plurality of second sub-grooves 52. Figure 2 It is exemplarily shown that the depth of the first sub-groove 51 is, for example, greater than the depth of the second sub-groove 52, and a plurality of first sub-grooves 51 and a plurality of second sub-grooves 52 are used to form a protruding structure 6 on the array layer 2. In addition, the first sub-groove 51 and the second sub-groove 52 are not connected, so that the side of the protruding structure 6 facing away from the substrate 1 is flush with the array layer 2 outside the anti-overflow groove 5. It can be understood that the depth of the second sub-groove 52 can also be set, for example, greater than the depth of the first sub-groove 51, and the embodiment of the present disclosure is not limited to this.

[0044] Thus, the first sub-groove 51 and the second sub-groove 52 can be used to accommodate excess liquid organic encapsulation material, and the convex structure 6 formed by the plurality of first sub-grooves 51 and the plurality of second sub-grooves 52 will further hinder the liquid organic encapsulation material from climbing up, slowing down the flow of the liquid organic encapsulation material, and preventing the organic encapsulation material from overflowing the non-display area NA, and the retaining wall 4 is conducive to further preventing the liquid organic encapsulation material from overflowing outward. Thus, the encapsulation reliability of the encapsulation layer 3 is improved, the encapsulation effect of the display panel is improved, the performance of the display panel is improved, and the service life of the display panel is extended.

[0045] It should be noted that the specific preparation method of the first sub-groove 51 and the second sub-groove 52 can be understood by referring to the description in the subsequent embodiment of the preparation method of the display panel, and will not be described in detail here.

[0046] It should be noted that the number of the first sub-grooves 51 and the second sub-grooves 52 in the embodiment of the present disclosure can be set according to the actual use requirements of the display panel, and the embodiment of the present disclosure is not limited to this.

[0047] In some embodiments, Figure 1As shown, the anti-overflow groove 5 includes multiple first sub-grooves 51 and multiple second sub-grooves 52; the depths of the first sub-grooves 51 and the second sub-grooves 52 are different; the second sub-grooves 52 are located between adjacent first sub-grooves 51; the first sub-grooves 51 are connected to the second sub-grooves 52; a protruding structure 6 is formed below the side of the first sub-grooves 51 or the second sub-grooves 52 facing the substrate 1; the side of the protruding structure 6 facing away from the substrate 1 is lower than the array layer 2 outside the anti-overflow groove 5.

[0048] Specifically, Figure 1 As shown, the anti-overflow groove 5 includes, for example, a plurality of first sub-grooves 51 and a plurality of second sub-grooves 52. Figure 1 It is exemplarily shown that the depth of the first sub-groove 51 is, for example, greater than the depth of the second sub-groove 52, and a plurality of first sub-grooves 51 and a plurality of second sub-grooves 52 are used to form a protruding structure 6 in the array layer 2. The first sub-groove 51 and the second sub-groove 52 are connected, so that the side of the protruding structure 6 facing away from the substrate 1 is lower than the array layer 2 outside the anti-overflow groove 5, and the liquid organic encapsulation material can be accommodated in the first sub-groove 51 and the second sub-groove 52, and the protruding structure 6 formed by the first sub-groove 51 and the second sub-groove 52 in the array layer 2 can further hinder the climbing of the liquid organic encapsulation material, slowing down the flow of the liquid organic encapsulation material, thereby improving the encapsulation reliability of the encapsulation layer 3, improving the encapsulation effect of the display panel, improving the performance of the display panel, and extending the service life of the display panel.

[0049] It should be noted that the specific preparation method of the first sub-groove 51 and the second sub-groove 52 can be understood by referring to the description in the subsequent embodiment of the preparation method of the display panel, and will not be described in detail here.

[0050] It should be noted that the number of the first sub-grooves 51 and the second sub-grooves 52 in the embodiment of the present disclosure can be set according to the actual use requirements of the display panel, and the embodiment of the present disclosure is not limited to this.

[0051] Figure 3 FIG. 1 is a schematic diagram of a cross-sectional structure of another display panel provided in an embodiment of the present disclosure. Figure 3 As shown, the cross-sectional width of the protruding structure 6 gradually increases in a direction away from the substrate 1 .

[0052] Specifically, Figure 3As shown, along the direction away from the substrate 1, the cross-sectional width of the protruding structure 6 gradually increases, and the cross-sectional width of the groove formed between adjacent protruding structures 6 gradually decreases along the direction away from the substrate 1. When the liquid organic encapsulation material flows into the groove between the protruding structures 6, the opening formed by the groove is smaller, which increases the difficulty of the organic encapsulation material flowing out, achieving a rebound backflow effect, thereby slowing down the flow speed of the organic encapsulation material, preventing the liquid organic encapsulation material from overflowing, improving the encapsulation reliability of the encapsulation layer 3, improving the encapsulation effect of the display panel, improving the performance of the display panel, and extending the service life of the display panel.

[0053] Figure 4 FIG. 1 is a schematic diagram of a cross-sectional structure of another display panel provided in an embodiment of the present disclosure. Figure 4 As shown, the array layer 2 of the display area AA includes a source-drain electrode layer 21, an active layer 22 and a source-drain connection via 23; the source-drain electrode layer 21 is electrically connected to the active layer 22 through the source-drain connection via 23; the first sub-recess 51 or the second sub-recess 52 has the same depth as the source-drain connection via 23.

[0054] Specifically, Figure 4 As shown, the array layer 2 in the display area AA includes a source-drain electrode layer 21, an active layer 22 and a source-drain connection via 23, the active layer 22 is located on one side of the substrate 1, and the source-drain electrode layer 21 is located on the side of the active layer 22 away from the substrate 1. In order to achieve electrical connection, when preparing the display panel, the insulating layer between the source-drain electrode layer 21 and the active layer 22 is punched as a source-drain connection via 23, and the source-drain electrode layer 21 and the active layer 22 are electrically connected through the source-drain connection via 23. Exemplarily, the source-drain connection via 23 and the first sub-recess 51 can be prepared at the same time, so that the depths of the first sub-recess 51 and the source-drain connection via 23 are the same. Alternatively, the source-drain connection via 23 and the second sub-recess 52 can be prepared at the same time, so that the depths of the second sub-recess 52 and the source-drain connection via 23 are the same.

[0055] Figure 4 It is exemplarily shown that the array layer 2 also includes a circuit connection layer 24, an anode layer 25, a light-emitting layer 26 and a cathode layer 27. When preparing the above film layers, the above film layers will grow along the shape of the anti-overflow groove 5 and the protruding structure 6 to form grooves and protrusions. Subsequent embodiments can be understood in this way and will not be repeated here.

[0056] Therefore, by providing the first sub-groove 51 or the second sub-groove 52 and preparing the source-drain connection via 23 at the same time, the manufacturing process of the display panel will not be increased, the manufacturing efficiency of the display panel is improved, and the manufacturing cost of the display panel is reduced.

[0057] In some embodiments, Figure 4As shown, the source-drain electrode layer 21 includes a first source-drain electrode layer 21 , the active layer 22 includes a polysilicon layer 221 , the source-drain connection via 23 includes a first via 231 ; the first sub-recess 51 or the second sub-recess 52 has the same depth as the first via 231 .

[0058] Specifically, Figure 4 As shown, the drain electrode layer includes a first source-drain electrode layer 21, and the pixel driving circuit in the array layer 2 includes, for example, a low-temperature polysilicon transistor T1, and the active layer 22 includes a polysilicon layer 221. In order to achieve electrical connection, when preparing the display panel, the insulating layer between the first source-drain electrode layer 21 and the polysilicon layer 221 is punched as a first via hole 231, and the first source-drain electrode layer 21 and the polysilicon layer 221 are electrically connected through the first via hole 231. The depth of the first via hole 231 can be, for example, 1.4 microns. For example, it can be as follows Figure 4 As shown, the first via hole 231 and the first sub-recess 51 are prepared simultaneously, so that the depths of the first sub-recess 51 and the first via hole 231 are the same.

[0059] Figure 5 A schematic cross-sectional structure diagram of another display panel provided in an embodiment of the present disclosure. Figure 5 FIG. 2 exemplarily shows that the first via hole 231 and the second sub-recess 52 are prepared simultaneously, so that the second sub-recess 52 and the first via hole 231 have the same depth. The bottom of the first sub-recess 51 may be flush with the light shielding layer 28, for example.

[0060] Therefore, by providing the first sub-groove 51 or the second sub-groove 52 and preparing the first via hole 231 at the same time, the manufacturing process of the display panel will not be increased, the manufacturing efficiency of the display panel is improved, and the manufacturing cost of the display panel is reduced.

[0061] In some embodiments, Figure 4 As shown, the source-drain electrode layer 21 includes a second source-drain electrode layer 21 , the active layer 22 includes a metal oxide semiconductor layer 222 , the source-drain connection via 23 includes a second via 232 ; the first sub-recess 51 or the second sub-recess 52 has the same depth as the second via 232 .

[0062] Specifically, Figure 4As shown, the source-drain electrode layer 21 includes a second source-drain electrode layer 21, and the pixel driving circuit in the array layer 2 includes, for example, a metal oxide transistor T2, and the active layer 22 includes a metal oxide semiconductor layer 222. In order to achieve electrical connection, when preparing the display panel, a hole is punched in the insulating layer between the second source-drain electrode layer 21 and the metal oxide semiconductor layer 222 as a second via hole 232, and the second source-drain electrode layer 21 and the metal oxide semiconductor layer 222 are electrically connected through the second via hole 232. The depth of the second via hole 232 can be, for example, 0.75 microns. Exemplarily, the second via hole 232 and the first sub-recess 51 can be prepared at the same time so that the depths of the first sub-recess 51 and the second via hole 232 are the same (not shown in the drawings). Or it can also be as follows Figure 4 As shown, the second via hole 232 and the second sub-recess 52 are prepared simultaneously, so that the second sub-recess 52 and the second via hole 232 have the same depth.

[0063] Therefore, by providing the first sub-groove 51 or the second sub-groove 52 and preparing the second via hole 232 at the same time, the manufacturing process of the display panel will not be increased, the manufacturing efficiency of the display panel is improved, and the manufacturing cost of the display panel is reduced.

[0064] In some embodiments, Figure 4 As shown, the depth of the first sub-groove 51 can be set to be greater than the depth of the second sub-groove 52, so that the first sub-groove 51 has the same depth as the first via hole 231, the second sub-groove 52 has the same depth as the second via hole 232, and the first sub-groove 51 and the second sub-groove 52 have the same depth as the source-drain connection via hole 23, further simplifying the manufacturing process of the display panel.

[0065] Figure 6 FIG. 1 is a schematic diagram of a cross-sectional structure of another display panel provided in an embodiment of the present disclosure. Figure 6 As shown, the side of the protruding structure 6 in the anti-overflow groove 5 facing away from the substrate 1 is covered with a first etching barrier layer 53; and / or the bottom of the anti-overflow groove 5 on both sides of the protruding structure 6 is covered with a second etching barrier layer 54; the first etching barrier layer 53 and / or the second etching barrier layer 54 are arranged on the same layer as part of the metal layer of the array layer 2 in the display area AA.

[0066] For example, Figure 6As shown, a first etching barrier layer 53 is provided on the side of the protruding structure 6 in the anti-overflow groove 5 facing away from the substrate 1. The first etching barrier layer 53 is provided on the same layer as a part of the metal layer in the array layer 2 in the display area AA. A patterned metal layer is retained in the array layer 2 between the retaining wall 4 and the display area AA as the first etching barrier layer 53. When etching the array layer 2 between the retaining wall 4 and the display area AA to form the anti-overflow groove 5, the first etching barrier layer 53 is used as a mask. The etchant may be, for example, an etching gas or an etching liquid, etc. The etching gas and the etching liquid hardly react with the metal. When etching reaches the first etching barrier layer 53, the etching stops to form a second sub-groove 52.

[0067] For example, continue to refer to Figure 6 The bottom of the anti-overflow groove 5 on both sides of the protruding structure 6 is covered with a second etching barrier layer 54, and the second etching barrier layer 54 is arranged in the same layer as a part of the metal layer in the array layer 2 in the display area AA. The patterned metal layer is retained in the array layer 2 between the retaining wall 4 and the display area AA as the second etching barrier layer 54. When the array layer 2 between the retaining wall 4 and the display area AA is etched to form the anti-overflow groove 5, the second etching barrier layer 54 is used as a mask, and the etchant hardly reacts with the metal. When etching reaches the second etching barrier layer 54, the etching stops to form the first sub-groove 51.

[0068] Thus, part of the metal layer of the array layer 2 in the display area AA is arranged in the same layer as the first etching stop layer 53 and / or the second etching stop layer 54, so as to avoid the first etching stop layer 53 and / or the second etching stop layer 54 from reacting with the etchant, and avoid the problem of over-etching caused by the reaction of the photoresist with the etchant when the photoresist is used as the etching stop layer, thereby improving the etching accuracy. In addition, the first etching stop layer 53 and / or the second etching stop layer 54 is arranged in the same layer as part of the metal layer of the array layer 2 in the display area AA, so that there is no need to arrange an additional metal layer, thereby reducing the thickness of the display panel and facilitating the thinning of the display device.

[0069] It should be noted that the first etching stopper layer 53 may be provided only on the side of the protruding structure 6 in the anti-overflow groove 5 facing away from the substrate 1, or the second etching stopper layer 54 may be provided only on the bottom of the anti-overflow groove 5 on both sides of the protruding structure 6, or the first etching stopper layer 53 may be provided on the side of the protruding structure 6 in the anti-overflow groove 5 facing away from the substrate 1, and the bottom of the anti-overflow groove 5 on both sides of the protruding structure 6 may be covered with the second etching stopper layer 54.

[0070] Figure 7 FIG. 1 is a schematic diagram of a cross-sectional structure of another display panel provided in an embodiment of the present disclosure. Figure 7 As shown, the first etch stop layer 53 or the second etch stop layer 54 is disposed in the same layer as the light shielding layer 28 of the display area AA.

[0071] Specifically, Figure 7 As shown, the display area AA may include, for example, a light shielding layer 28, which is used to shield impurity ions at the bottom of the substrate 1. Figure 7 It is exemplarily shown that the second etching stopper layer 54 is arranged at the same layer as the light shielding layer 28 of the display area AA. When the entire metal layer of the display area AA is patterned to prepare the light shielding layer 28 of the display area AA, the patterned metal layer is retained as the second etching stopper layer 54 in the metal layer where the light shielding layer 28 between the retaining wall 4 and the display area AA is located, so that the second etching stopper layer 54 is arranged at the same layer as the light shielding layer 28 of the display area AA. When the array layer 2 between the retaining wall 4 and the display area AA is subsequently etched to form the first sub-recess 51, the second etching stopper layer 54 is used as a mask, and the etchant hardly reacts with the metal. When etching reaches the second etching stopper layer 54, the etching stops to form the first sub-recess 51, thereby improving the etching accuracy.

[0072] It is understandable that the first etch stop layer 53 and the light shielding layer 28 of the display area AA may also be arranged in the same layer, which can be understood by referring to the second etch stop layer 54 and the light shielding layer 28 of the display area AA being arranged in the same layer, and will not be elaborated here.

[0073] Therefore, the first etch stop layer 53 and / or the second etch stop layer 54 are arranged on the same layer as the light shielding layer 28 of the display area AA, and no additional metal layer is required, which reduces the thickness of the display panel and is conducive to making the display device thinner and lighter.

[0074] In some embodiments, Figure 6 As shown, the first etch stop layer 53 or the second etch stop layer 54 is disposed in the same layer as the gate metal layer 29 of the display area AA.

[0075] Specifically, Figure 6 As shown, the gate metal layer 29 located in the display area AA can, for example, be located on the side of the light shielding layer 28 away from the substrate 1. When the metal layer of the display area AA is patterned to prepare the gate metal layer 29 of the display area AA, the patterned metal layer is retained as the second etching barrier layer 54 in the metal layer where the gate metal layer 29 is located between the retaining wall 4 and the display area AA, so that the second etching barrier layer 54 is arranged on the same layer as the gate metal layer 29 of the display area AA, that is, the second etching barrier layer 54 and the gate metal layer 29 of the display area AA are prepared in the same process step. Subsequently, when the array layer 2 between the retaining wall 4 and the display area AA is etched to form the first sub-recess 51, the second etching barrier layer 54 is used as a mask, and the etchant hardly reacts with the metal. When etching reaches the second etching barrier layer 54, the etching stops to form the first sub-recess 51, thereby improving the etching accuracy.

[0076] It is understandable that the first etch stop layer 53 may be disposed on the same layer as the gate metal layer 29 of the display area AA, which can be understood by referring to the second etch stop layer 54 disposed on the same layer as the gate metal layer 29 of the display area AA, and will not be elaborated here.

[0077] Therefore, the first etch stop layer 53 and / or the second etch stop layer 54 are arranged on the same layer as the gate metal layer 29 of the display area AA, and no additional metal layer is required, which reduces the thickness of the display panel and is conducive to making the display device thinner and lighter.

[0078] Figure 8 FIG. 1 is a schematic diagram of a cross-sectional structure of another display panel provided in an embodiment of the present disclosure. Figure 8 As shown, the first etch stop layer 53 or the second etch stop layer 54 is disposed in the same layer as the gate metal layer 291 of the polysilicon transistor T1 in the display area AA.

[0079] Specifically, combined Figure 6 and Figure 8 The array layer 2 of the display area AA may include, for example, a first metal layer, which is located on the side of the light shielding layer 28 facing away from the substrate 1. When the entire first metal layer is patterned to prepare the gate metal layer 291 of the polysilicon transistor T1, the patterned first metal layer is retained in the metal layer where the gate metal layer 291 of the polysilicon transistor T1 between the retaining wall 4 and the display area AA is located, so that the second etching stopper layer 54 is arranged on the same layer as the gate metal layer 291 of the polysilicon transistor T1 of the display area AA, that is, the second etching stopper layer 54 and the gate metal layer 291 of the polysilicon transistor T1 of the display area AA are prepared in the same process step, and the pattern of the mask used to form the second etching stopper layer 54 may be the same as or different from the pattern of the mask used to form the gate metal layer 291 of the polysilicon transistor T1. When the array layer 2 between the retaining wall 4 and the display area AA is subsequently etched to form the first sub-groove 51, the second etching barrier layer 54 is used as a mask. The etchant hardly reacts with the metal. When etching reaches the second etching barrier layer 54, the etching stops to form the first sub-groove 51, thereby improving the etching accuracy.

[0080] It is understandable that the first etch stop layer 53 can also be set on the same layer as the gate metal layer 291 of the polysilicon transistor T1 in the display area AA, which can be understood by referring to the second etch stop layer 54 being set on the same layer as the gate metal layer 291 of the polysilicon transistor T1 in the display area AA, and will not be elaborated here.

[0081] Therefore, the first etch stop layer 53 and / or the second etch stop layer 54 are arranged on the same layer as the gate metal layer 291 of the polysilicon transistor T1 in the display area AA, and no additional metal layer is required, which reduces the thickness of the display panel and is conducive to making the display device thinner and lighter.

[0082] Fig. 9 A schematic cross-sectional structure diagram of another display panel provided in an embodiment of the present disclosure. Figure 6 and Fig. 9 The first etch stop layer 53 or the second etch stop layer 54 is disposed on the same layer as the gate metal layer 292 of the metal oxide transistor T2 of the display area AA.

[0083] Specifically, combined Figure 6 and Fig. 9 The array layer 2 located in the display area AA may include, for example, a second metal layer, and the second metal layer is located on the side of the first metal layer facing away from the substrate 1. When the entire second metal layer is patterned to prepare the gate metal layer 292 of the metal oxide transistor T2, the patterned second metal layer is retained on the gate metal layer 292 of the metal oxide transistor T2 between the retaining wall 4 and the display area AA, so that the first etching barrier layer 53 is arranged on the same layer as the gate metal layer 292 of the metal oxide transistor T2 in the display area AA, that is, the first etching barrier layer 53 and the gate metal layer 292 of the metal oxide transistor T2 in the display area AA are prepared in the same process step, and the pattern of the mask used to form the first etching barrier layer 53 may be the same as or different from the pattern of the mask used to form the gate metal layer 292 of the metal oxide transistor T2. When the array layer 2 between the retaining wall 4 and the display area AA is subsequently etched to form the second sub-groove 52, the first etching barrier layer 53 is used as a mask. The etchant hardly reacts with the metal. When etching reaches the first etching barrier layer 53, the etching stops to form the second sub-groove 52, thereby improving the etching accuracy.

[0084] It is understandable that the second etch stop layer 54 can also be set on the same layer as the gate metal layer 292 of the metal oxide transistor T2 in the display area AA, which can be understood by referring to the first etch stop layer 53 being set on the same layer as the gate metal layer 292 of the metal oxide transistor T2 in the display area AA, and will not be elaborated here.

[0085] Therefore, the first etching stop layer 53 and / or the second etching stop layer 54 are arranged on the same layer as the gate metal layer 292 of the metal oxide transistor T2 of the display area AA, and no additional metal layer is required, which reduces the thickness of the display panel and is conducive to making the display device thinner and lighter.

[0086] It should be noted that, according to Figure 6 As shown, a first etch stop layer 53 and a second etch stop layer 54 are provided to form a first sub-recess 51 and a second sub-recess 52; Figure 8 As shown, only the first etching stop layer 53 is provided to form the second sub-recess 52; Fig. 9As shown, only the second etching stopper layer 54 is provided to form the first sub-recess 51 .

[0087] Fig.10 FIG. 1 is a schematic diagram of a cross-sectional structure of another display panel provided in an embodiment of the present disclosure. Fig.10 As shown, the first etch stop layer 53 or the second etch stop layer 54 is disposed in the same layer as the capacitor metal layer 30 of the display area AA.

[0088] Specifically, Fig.10 As shown, the array layer 2 of the display area AA may include a capacitor metal layer 30, and the second metal layer is located on the side of the first metal layer away from the substrate 1. The capacitor metal layer 30 and the first metal layer may be used to form a storage capacitor.

[0089] When the entire capacitor metal layer 30 is patterned, the patterned capacitor metal layer 30 is retained in the array layer 2 between the retaining wall 4 and the display area AA, so that the second etching barrier layer 54 is arranged in the same layer as the capacitor metal layer 30 of the display area AA, that is, the second etching barrier layer 54 and the capacitor metal layer 30 of the display area AA are prepared in the same process step, and the pattern of the mask used to form the second etching barrier layer 54 can be the same as or different from the pattern of the mask used to form the capacitor metal layer 30. When the array layer 2 between the retaining wall 4 and the display area AA is subsequently etched to form the first sub-groove 51, the second etching barrier layer 54 is used as a mask, and the etchant hardly reacts with the metal. When etching reaches the second etching barrier layer 54, the etching stops to form the first sub-groove 51, thereby improving the etching accuracy.

[0090] It is understandable that the first etch stop layer 53 may be disposed on the same layer as the capacitor metal layer 30 of the display area AA, which can be understood by referring to the second etch stop layer 54 disposed on the same layer as the capacitor metal layer 30 of the display area AA, and will not be elaborated here.

[0091] Therefore, the first etch stop layer 53 and / or the second etch stop layer 54 are arranged on the same layer as the capacitor metal layer 30 of the display area AA, and no additional metal layer is required, which reduces the thickness of the display panel and is conducive to making the display device thinner and lighter.

[0092] Based on the same inventive concept, the embodiment of the present disclosure also provides a display device, including a display panel as in any one of the above display panel embodiments. Therefore, the display device has the technical features of the display panel provided in the embodiment of the present disclosure, and can achieve the beneficial effects of the display panel provided in the embodiment of the present disclosure. For the similarities, refer to the above description of the display panel provided in the embodiment of the present disclosure, and no further description is given here.

[0093] For example, Fig.11Schematic diagram of a display device provided by an embodiment of the present disclosure. Fig.11 As shown, the display device provided by the embodiment of the present disclosure includes the display panel 100 provided by any of the above embodiments of the present disclosure. Fig.11 The embodiment only takes a mobile phone as an example to illustrate the display device. It can be understood that the display device provided in the embodiment of the present application can be any electronic product with a display function, including but not limited to the following categories: mobile phones, televisions, laptops, desktop displays, tablet computers, digital cameras, smart bracelets, smart glasses, car displays, medical equipment, industrial control equipment, touch interactive terminals, etc. The embodiment of the present invention does not make special limitations on this.

[0094] The display device provided by the embodiment of the present disclosure includes the above-mentioned display panel, and thus can solve the same technical problems as the above-mentioned display panel embodiment and achieve the same technical effects, which will not be repeated here.

[0095] The embodiments of the present disclosure also provide a method for preparing a display panel, which is used to prepare any of the display panels provided in the above embodiments and can achieve corresponding beneficial effects. The similarities can be understood by referring to the explanation of the display panel above and will not be repeated here.

[0096] Fig.12 A schematic diagram of a method for preparing a display panel provided in an embodiment of the present disclosure is shown in FIG. Fig.12 As shown, the method for preparing the display panel includes:

[0097] S101, forming an array layer on one side of a substrate.

[0098] Specifically, Fig.13 As shown, the substrate 1 may be, for example, a flexible substrate or a rigid substrate, for supporting and protecting the film layer thereon. The material of the substrate 1 is not specifically limited in the embodiment of the present disclosure.

[0099] like Fig.14 As shown, an array layer 2 is formed on the substrate, and the array layer 2 may include structures such as a pixel driving circuit and a light-emitting element, which will not be elaborated in detail in the embodiment of the present disclosure.

[0100] S102, forming an anti-overflow groove in the non-display area of ​​the array layer; wherein a plurality of protruding structures are formed in the anti-overflow groove.

[0101] In some embodiments, the plurality of protrusion structures formed in the anti-overflow groove may be formed by etching multiple times.

[0102] Specifically, Fig.15As shown, a photoresist layer 80 is formed on the side of the array layer 2 in the non-display area NA away from the substrate 1. The photoresist layer 80 is, for example, a positive photoresist, and the photoresist is patterned using a first mask 71 with a certain shape. Fig.15 The filled part is the opaque area of ​​the first mask 71, and the other area is the transparent area. The solid arrow represents light. After exposure and development, the transparent photoresist layer 80 corresponding to the opaque area is not exposed to light and will not be dissolved by the developer. The pattern obtained by the transparent photoresist layer 80 is the same as the pattern of the first mask 71. The non-display area NA of the array layer 2 is etched by an etchant, and the etching time is, for example, t1, so as to form Fig.16 The first sub-groove 51 in the anti-overflow groove 5 is shown.

[0103] like Fig.17 As shown, a photoresist layer 80 is formed on the side of the array layer 2 in the non-display area NA away from the substrate 1. The photoresist layer 80 is, for example, a positive photoresist. The photoresist is patterned using a second mask 72 with a certain shape. The second mask 72 has a different pattern from the first mask 71. Fig.17 The filled part is the opaque area of ​​the second mask 72, and the other area is the transparent area. The solid arrow represents light. After exposure and development, the transparent photoresist layer 80 corresponding to the opaque area is not exposed to light and will not be dissolved by the developer. The pattern obtained by the transparent photoresist layer 80 is the same as the pattern of the second mask 72. The non-display area NA of the array layer 2 is etched by an etchant, and the etching time is, for example, t2, so as to form Fig.18 The second sub-groove 52 is shown, and the second sub-groove 52 is connected to the first sub-groove 51, so that the side of the protrusion structure 6 facing away from the substrate 1 is lower than the array layer 2 outside the anti-overflow groove 5. The depth of the first sub-groove 51 is, for example, greater than the depth of the second sub-groove 52, and the etching time t1 is greater than t2.

[0104] It should be noted that the depths of the first sub-groove and the second sub-groove may be different by adjusting other etching parameters, which is not limited in the embodiment of the present disclosure.

[0105] like Fig.19 As shown, the array layer 2 located in the non-display area NA is photolithographically processed using the third mask 73 and the photoresist layer 80 to form a Fig. 20 The first sub-groove 51 is shown. Fig.21 , the array layer 2 located in the non-display area NA is photolithographically processed using the fourth mask 74 and the photoresist layer 80 to form a Fig. 22The second sub-groove 52 is shown. The second sub-groove 52 is connected to the first sub-groove 51, so that the side of the protrusion structure 6 facing away from the substrate 1 is flush with the array layer 2 outside the anti-overflow groove 5, and the time for etching the first sub-groove 51 is greater than the time for etching the second sub-groove 52.

[0106] In some other embodiments, the plurality of protruding structures formed in the anti-overflow groove may be formed by etching in one step.

[0107] Specifically, Fig.23 As shown, a photoresist layer 80 is formed on the side of the array layer 2 located in the non-display area NA away from the substrate 1, and a half-tone mask 75 with a certain shape is used to expose and develop the array layer 2 located in the non-display area NA. The half-tone mask 75 may include a plurality of regions with different light transmittances, for example, a first non-light-transmitting region 751 and a second semi-light-transmitting region 752, and the light transmittance of the second semi-light-transmitting region 752 is greater than the light transmittance of the first non-light-transmitting region 751. After the light passes through the half-tone mask 75, the photoresist layer 80 forms a pattern with uneven thickness. After the area with high light transmittance is exposed and developed, the photoresist thickness retained in the corresponding area of ​​the photoresist layer 80 is smaller than the photoresist thickness retained in the corresponding area of ​​the photoresist layer 80 after the area with low light transmittance is exposed and developed. Thus, the photoresist layer 80 forms a pattern with uneven thicknesses.

[0108] Afterwards, the array layer 2 located in the non-display area NA can be etched to remove the photoresist layer 80 and part of the array layer 2. The total thickness of the photoresist layer 80 and the array layer 2 etched at different positions on the substrate 1 is the same. Since the thickness of the photoresist layer 80 is not uniform after exposure and development, the following is formed after etching: Fig.24 The array layer 2 shown has uneven thickness, and the higher array layer 2 serves as the protruding structure 6 in the anti-overflow groove 5 , while the lower array layer 2 is located at the bottom of the anti-overflow groove 5 on both sides of the protruding structure 6 .

[0109] S103, forming a retaining wall above the array layer in the non-display area; wherein the anti-overflow groove is located between the retaining wall and the display area.

[0110] Specifically, Fig.25 As shown, a retaining wall 4 is formed on the side of the array layer 2 in the non-display area NA facing away from the substrate 1. Figures 5 to 11 The retaining wall 4 may include, for example, a first base, a second base and a third base. The first base may be arranged at the same layer as the planarization layer of the display area, the second base may be arranged at the same layer as the pixel definition layer of the display area, and the third base may be arranged at the same layer as the pixel support layer.

[0111] It should be noted that the retaining wall may also include other film layers as long as they can meet the preparation requirements of the display panel, and the embodiments of the present disclosure are not limited to this.

[0112] S104 , forming an encapsulation layer on the array layer and the retaining wall, wherein the encapsulation layer includes an organic layer; the organic layer covers the display area and extends to a portion of the non-display area.

[0113] Specifically, combined Figures 1 to 3 , an encapsulation layer 3 is formed on the side of the array layer 2 and the retaining wall 4 facing away from the substrate 1. For example, a layer of inorganic material is deposited by chemical vapor deposition on the side of the array layer 2 facing away from the substrate 1 to form a first inorganic layer, and a layer of organic material is formed by inkjet printing on the side of the first inorganic layer facing away from the array layer 2. After the layer of organic material is leveled and solidified, an organic layer is formed, and an inorganic material is deposited again by chemical vapor deposition on the organic layer facing away from the first inorganic layer to form a second inorganic layer, and the second inorganic layer covers the organic layer. The first inorganic layer, the organic layer, and the second inorganic layer are combined to form an encapsulation layer 3.

[0114] Optionally, forming an array layer on one side of the substrate includes: forming a first etch barrier layer and / or a second etch barrier layer in the non-display area while forming a partial metal layer in the display area; forming an anti-overflow groove in the non-display area of ​​the array layer, including: using the first etch barrier layer and / or the second etch barrier layer as a mask, etching the anti-overflow groove in the non-display area of ​​the array layer, so that a plurality of protruding structures are formed in the anti-overflow groove; wherein the first etch barrier layer covers a side of the protruding structure in the anti-overflow groove facing away from the substrate, and the second etch barrier layer covers the bottom of the anti-overflow groove on both sides of the protruding structure.

[0115] In the following, an example is taken in which the first etch stop layer is disposed in the same layer as the gate metal layer of the polysilicon transistor, and the second etch stop layer is disposed in the same layer as the gate metal layer of the metal oxide transistor.

[0116] Illustratively, a first metal layer is formed on a side of the first active layer facing away from the substrate, and the first metal layer is exposed, developed, and etched to form a patterned gate metal layer of the polysilicon transistor in the display area, and a patterned first etch barrier layer is formed in the non-display area. The patterns of the gate metal layer of the polysilicon transistor and the first etch barrier layer may be the same or different, and the embodiments of the present disclosure are not limited to this.

[0117] A capacitor metal layer, a second active layer, a second metal layer, a third metal layer, and an insulating layer between the capacitor metal layer and the third metal layer are formed on the side of the first metal layer facing away from the substrate. The second metal layer is formed on the side of the second active layer facing away from the substrate, and the second metal layer is exposed, developed, and etched to form a patterned gate metal layer of a metal oxide transistor in the display area, and a patterned second etching barrier layer is formed in the non-display area. The patterns of the gate metal layer of the metal oxide transistor and the second etching barrier layer may be the same or different, and the embodiments of the present disclosure are not limited thereto.

[0118] When forming the source-drain connection vias connecting the third metal layer and the polysilicon layer, the array layer located in the non-display area is etched simultaneously. Since the first etch barrier layer does not react with the etchant, the first etch barrier layer is used as a mask to etch in the non-display area until the first etch barrier layer is cut off, and continue to etch in the display area until the first active layer is cut off.

[0119] When forming the source-drain connection via hole connecting the third metal layer and the metal oxide semiconductor layer, the array layer located in the non-display area is etched simultaneously. Since the second etch barrier layer does not react with the etchant, the second etch barrier layer is used as a mask to etch in the non-display area until the second etch barrier layer is cut off, and in the display area, etching continues until the second active layer is cut off. Thus, multiple protrusion structures are formed in the anti-overflow groove.

[0120] The display panel, display device and method for preparing the display panel provided by the embodiments of the present disclosure include a substrate; an array layer located on the substrate; an encapsulation layer located on the side of the array layer away from the substrate, the encapsulation layer including an organic layer; the organic layer covers the display area and extends to part of the non-display area; a retaining wall located in the non-display area; an anti-overflow groove located between the retaining wall and the display area; and the anti-overflow groove includes a plurality of protruding structures. By arranging a plurality of protruding structures in the anti-overflow groove, the protruding structures are used to lengthen the flow distance of the liquid organic encapsulation material, and the protruding structures further hinder the climbing of the liquid organic encapsulation material, slow down the flow of the liquid organic encapsulation material, and avoid the organic encapsulation material from overflowing into the non-display area. The retaining wall is conducive to further preventing the liquid organic encapsulation material from overflowing outward, thereby improving the encapsulation reliability of the encapsulation layer, improving the encapsulation effect of the display panel, improving the performance of the display panel, and extending the service life of the display panel.

[0121] It should be noted that, in this article, relational terms such as "first" and "second" are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, the elements defined by the sentence "comprise a ..." do not exclude the existence of other identical elements in the process, method, article or device including the elements.

[0122] The above are only specific embodiments of the present disclosure, so that those skilled in the art can understand or implement the present disclosure. Various modifications to these embodiments will be apparent to those skilled in the art, and the general principles defined herein can be implemented in other embodiments without departing from the spirit or scope of the present disclosure. Therefore, the present disclosure will not be limited to these embodiments herein, but will conform to the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A display panel, characterized in that: It includes a display area and a non-display area; and also includes: substrate; an array layer located on the substrate; an encapsulation layer located on a side of the array layer away from the substrate, the encapsulation layer comprising an organic layer; the organic layer covers the display area and extends to a portion of the non-display area; A retaining wall, located in the non-display area; The anti-overflow groove is located between the retaining wall and the display area; the anti-overflow groove includes a plurality of protruding structures.

2. The display panel according to claim 1, characterized in that: The anti-overflow groove includes multiple first sub-grooves and multiple second sub-grooves; the multiple first sub-grooves and the multiple second sub-grooves form the convex structure in the array layer; the depths of the first sub-grooves and the second sub-grooves are different; the second sub-grooves are located between adjacent first sub-grooves; the first sub-grooves are not connected to the second sub-grooves; the side of the convex structure facing away from the substrate is flush with the array layer outside the anti-overflow groove.

3. The display panel according to claim 1, characterized in that: The anti-overflow groove includes a plurality of first sub-grooves and a plurality of second sub-grooves; the first sub-grooves and the second sub-grooves have different depths; the second sub-grooves are located between adjacent first sub-grooves; the first sub-grooves are connected to the second sub-grooves; the first sub-grooves or the second sub-grooves form the protruding structure below one side facing the substrate; the side of the protruding structure facing away from the substrate is lower than the array layer outside the anti-overflow groove.

4. The display panel according to claim 1, characterized in that: Along a direction away from the substrate, the cross-sectional width of the protruding structure gradually increases.

5. The display panel according to claim 2 or 3, characterized in that: The array layer of the display area includes a source-drain electrode layer, an active layer and a source-drain connection via hole; the source-drain electrode layer is electrically connected to the active layer through the source-drain connection via hole; The first sub-recess or the second sub-recess has the same depth as the source-drain connection via hole.

6. The display panel according to claim 5, characterized in that: The source-drain electrode layer includes a first source-drain electrode layer, the active layer includes a polysilicon layer, and the source-drain connection via hole includes a first via hole; The first sub-groove or the second sub-groove has the same depth as that of the first via hole.

7. The display panel according to claim 5, characterized in that: The source-drain electrode layer includes a second source-drain electrode layer, the active layer includes a metal oxide semiconductor layer, and the source-drain connection via hole includes a second via hole; The first sub-groove or the second sub-groove has the same depth as the second via hole.

8. The display panel according to claim 1, characterized in that: A first etching stopper layer is provided on a side of the protruding structure in the anti-overflow groove facing away from the substrate; and / or a second etching stopper layer is provided on the bottom of the anti-overflow groove on both sides of the protruding structure; The first etch stop layer and / or the second etch stop layer are disposed in the same layer as a portion of the metal layer of the array layer in the display area.

9. The display panel according to claim 8, characterized in that: The first etching stop layer or the second etching stop layer is disposed in the same layer as the light shielding layer of the display area.

10. The display panel according to claim 8, characterized in that: The first etch stop layer or the second etch stop layer is disposed in the same layer as the gate metal layer of the display area.

11. The display panel according to claim 10, characterized in that: The first etching stop layer or the second etching stop layer is disposed on the same layer as the gate metal layer of the polysilicon transistor T1 in the display area.

12. The display panel according to claim 10, characterized in that: The first etching stop layer or the second etching stop layer is disposed on the same layer as the gate metal layer of the metal oxide transistor T2 in the display area.

13. The display panel according to claim 8, characterized in that: The first etching stop layer or the second etching stop layer is disposed in the same layer as the capacitor metal layer of the display area.

14. A display device, characterized in that: Comprising the display panel as claimed in any one of claims 1 to 13.

15. A method for preparing a display panel, characterized in that: Suitable for forming a display panel as claimed in any one of claims 1 to 13, the preparation method comprising: forming an array layer on one side of the substrate; An anti-overflow groove is formed in the non-display area of ​​the array layer; wherein a plurality of protruding structures are formed in the anti-overflow groove; A retaining wall is formed above the array layer in the non-display area; wherein the anti-overflow groove is located between the retaining wall and the display area; An encapsulation layer is formed on the array layer and the retaining wall, wherein the encapsulation layer includes an organic layer; the organic layer covers the display area and extends to a portion of the non-display area.

16. The preparation method according to claim 15, characterized in that: The forming of the array layer on one side of the substrate comprises: forming a part of the metal layer in the display area and forming a first etching stop layer and / or a second etching stop layer in the non-display area; An anti-overflow groove is formed in the non-display area of ​​the array layer, comprising: Using the first etch stop layer and / or the second etch stop layer as a mask, etching an anti-overflow groove in a non-display area of ​​the array layer, so that a plurality of convex structures are formed in the anti-overflow groove; The first etching stopper layer covers the side of the protruding structure in the anti-overflow groove facing away from the substrate, and the second etching stopper layer covers the bottom of the anti-overflow groove on both sides of the protruding structure.

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