Laser scribing control method and device

Abstract

The invention provides a laser scribing control method and device, which is applied to the technical field of laser processing, and comprises the following steps: acquiring a plasma spectral image generated by laser breakdown of a material when laser scribing is performed on a to-be-processed multi-layer composite material based on a configured spectrograph; the collected plasma spectrogram image is analyzed, and the current laser scribing level is determined; and performing laser scribing control based on the determined current laser scribing level. Namely, the current laser scribing level is determined according to the plasma spectral image generated by the laser breakdown material collected by the spectrograph, and the laser scribing control is performed according to the determined current laser scribing level, so that the condition of excessive or insufficient laser scribing can be prevented.

Description

Technical Field

[0001] The present disclosure relates to the fields of laser processing and perovskite photovoltaic cell technology, and in particular to the field of laser scribing control technology. Background Art

[0002] Perovskite photovoltaic cells are one of the most eye-catching technologies in the photovoltaic field in recent years, and have broad application prospects. At present, in order to achieve grid-connected power generation of perovskite photovoltaic cells, thin-film cells must be divided into multiple sub-cells connected in series using a laser scribing process. Specifically, in the manufacturing process of perovskite photovoltaic cells, four laser scribing processes, P1, P2, P3, and P4, are required. Each process requires grooves of different depths to be drawn on the film according to the requirements of the cell structure, so that different layers of the multi-layer film are exposed at the bottom of the groove, so as to form a sub-cell series structure in the subsequent process.

[0003] However, inadequate laser scribing may increase internal resistance and seriously affect the performance of photovoltaic cells. Excessive scribing may damage the substrate, making the sample fragile or even shattered. Summary of the invention

[0004] In view of this, the embodiments of the present disclosure provide a laser scribing control method and device, which at least partially solve the problems existing in the prior art.

[0005] In a first aspect, an embodiment of the present disclosure provides a laser scribing control method, comprising:

[0006] The configured spectrometer collects the plasma spectrum image generated by the laser breaking through the material when the multi-layer composite material to be processed is laser scribed;

[0007] Analyze the collected plasma spectrum image to determine the current laser scribing level;

[0008] Based on the determined current laser scribing level, laser scribing control is performed.

[0009] Optionally, the multilayer composite material to be processed is a perovskite photovoltaic material.

[0010] Optionally, the perovskite photovoltaic material includes a glass layer, an ITO layer, a hole transport layer, a perovskite layer, an electron transport layer, and a metal electrode layer.

[0011] Optionally, based on the determined current laser scribing level, laser scribing control is performed, including at least one of the following:

[0012] If the current laser scribing level has not reached the target scribing level, controlling the laser generating laser to perform laser scribing processing according to the first power and / or the second repetition rate;

[0013] If the current laser scribing level is a target scribing layer, controlling the laser to perform laser scribing processing according to a second power and / or a second repetition rate, wherein the first power is greater than the second power, and the first repetition rate is greater than the second repetition rate;

[0014] If the current laser scribing level exceeds the target scribing level, the laser is controlled to stop the scribing process.

[0015] In a second aspect, the present disclosure discloses a laser scribing control method device, the device comprising:

[0016] A laser emitting assembly, used for generating laser light for laser scribing of a multi-layer composite material to be processed;

[0017] A spectrometer for collecting plasma spectrum images generated when lasers penetrate materials during laser scribing of multi-layer composite materials to be processed; and for analyzing the collected plasma spectrum images to determine the current laser scribing level;

[0018] The industrial computer is used for controlling the laser marking based on the determined current laser marking level.

[0019] Optionally, the spectrometer adopts a coaxial or paraxial detection light path.

[0020] Optionally, the probe of the spectrometer is equipped with a cutoff filter.

[0021] Optionally, the multilayer composite material to be processed is a perovskite photovoltaic material.

[0022] Optionally, the perovskite photovoltaic material includes a glass layer, an ITO layer, a hole transport layer, a perovskite layer, an electron transport layer, and a metal electrode layer.

[0023] Optionally, the industrial computer is also used for at least one of the following: if the current laser marking level has not reached the target marking level, controlling the laser generating laser to perform laser marking processing according to the first power and / or the second repetition rate; if the current laser marking level is the target marking level, controlling the laser to perform laser marking processing according to the second power and / or the second repetition rate, the first power is greater than the second power, and the first repetition rate is greater than the second repetition rate; if the current laser marking level has exceeded the target marking level, controlling the laser to stop the marking processing.

[0024] The present disclosure provides a laser scribing control method, including: collecting a plasma spectrum image generated by laser breakdown of a material when laser scribing is performed on a multi-layer composite material to be processed based on a configured spectrometer; analyzing the collected plasma spectrum image to determine the current laser scribing level; and controlling the laser scribing based on the determined current laser scribing level. That is, the current laser scribing level is determined by the plasma spectrum image generated by the laser breakdown of the material collected by the spectrometer, and the laser scribing is controlled according to the determined current laser scribing level, so as to prevent the occurrence of excessive or insufficient laser scribing.

[0025] In order to make the above-mentioned objectives, features and advantages of the present disclosure more obvious and easy to understand, preferred embodiments are specifically cited below and described in detail with reference to the attached drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] In order to more clearly illustrate the technical solutions of the embodiments of the present disclosure, the following is a brief introduction to the drawings required for use in the embodiments. The drawings herein are incorporated into the specification and constitute a part of the specification. These drawings illustrate embodiments consistent with the present disclosure and are used together with the specification to illustrate the technical solutions of the present disclosure. It should be understood that the following drawings only illustrate certain embodiments of the present disclosure and should not be regarded as limiting the scope. For ordinary technicians in this field, other relevant drawings can also be obtained based on these drawings without creative work.

[0027] Figure 1 is a schematic diagram of a laser scribing control method provided by an embodiment of the present disclosure;

[0028] Figure 2 is a schematic diagram of the layers of the perovskite photovoltaic material provided by the embodiment of the present disclosure;

[0029] Figure 3 It is a schematic diagram of the structure of the laser scribing control device provided in an embodiment of the present disclosure.

[0030] The description of the figures is as follows:

[0031] 1 Scanning galvanometer; 2 Laser beam; 3 Focusing lens; 4 Multilayer composite material; 5 Characteristic spectrum; 6 Spectrometer probe; 7 Exceeding laser. DETAILED DESCRIPTION

[0032] The following describes the implementation methods of the embodiments of the present disclosure through specific specific examples. Those skilled in the art can easily understand other advantages and effects of the embodiments of the present disclosure from the contents disclosed in this specification. Obviously, the described embodiments are only a part of the embodiments of the present disclosure, rather than all of the embodiments. The embodiments of the present disclosure can also be implemented or applied through other different specific implementation methods, and the details in this specification can also be modified or changed in various ways based on different viewpoints and applications without departing from the spirit of the embodiments of the present disclosure. It should be noted that the following embodiments and features in the embodiments can be combined with each other without conflict. Based on the embodiments in the embodiments of the present disclosure, all other embodiments obtained by ordinary technicians in this field without making creative work belong to the scope of protection of the embodiments of the present disclosure.

[0033] The present disclosure provides a laser scribing control method, such as Figure 1 As shown, including:

[0034] Step S101, based on the configured spectrometer, collects a plasma spectrum image generated when the laser breaks through the material when the multi-layer composite material to be processed is laser-scribed.

[0035] Specifically, the multi-layer composite material to be processed is a perovskite photovoltaic material, and may also be other multi-layer composite materials to which the laser scribing control method disclosed in the present invention can be applied.

[0036] Among them, the laser process link of perovskite production: P0-P4 has a total of 5 small links, which have high requirements for equipment precision. It is mainly divided into laser scribing and laser edge cleaning processes, with a total of 4 laser processing. Among them, the P0 link is laser marking, and starting from P1, there are 3 parallel laser scribing (P1-P3) to vaporize the material and form grooves, dividing the entire film layer into sub-cells with a width of about 4-12mm connected in series, thereby forming a separate module that blocks the conduction of current, so as to achieve the effect of increasing voltage and connecting cells in series. P4 is the laser edge cleaning link, the purpose of which is to clean the edge of the battery cell, remove the film layer with a width of about 10mm near the edge of the glass, and form an insulating area as the back-end packaging area.

[0037] Specifically, Figure 2 As shown, the perovskite photovoltaic material may include a glass layer, an ITO layer, a hole transport layer, a perovskite layer, an electron transport layer, and may also include a metal electrode layer.

[0038] Step S102, analyzing the collected plasma spectrum image to determine the current laser scribing level.

[0039] Specifically, due to the different materials used in different layers, the plasma release characteristics generated by the laser breaking through different materials are different. According to the plasma spectrum image of the current laser-scribed layer collected by the spectrometer, it is possible to analyze and determine which layer of material is to be laser-scribed.

[0040] Step S103, performing laser scribing control based on the determined current laser scribing level.

[0041] Specifically, when the current laser scribing level has not yet reached the target scribing level, the laser generating laser is controlled to perform the laser scribing process according to the first power and / or the second repetition rate.

[0042] Specifically, if the current laser scribing level is a target scribing layer, the laser is controlled to perform laser scribing processing according to a second power and / or a second repetition rate, the first power is greater than the second power, and the first repetition rate is greater than the second repetition rate.

[0043] Specifically, if the current laser scribing level exceeds the target scribing level, the laser is controlled to stop the scribing process.

[0044] For example, Figure 2 Taking the laser P2 link as an example, in this step, laser scribing needs to process grooves as deep as the ITO layer on the surface of the thin-film battery, that is, the hole transport layer is the target scribing layer. If the current laser scribing layer is an electron transport layer or a perovskite layer, the current laser scribing level has not yet reached the target scribing layer, and the laser generating the laser is controlled to perform laser scribing processing according to the first power and / or the second repetition rate. If the current laser scribing layer is a hole transport layer, that is, the target scribing layer, the laser is controlled to perform laser scribing processing according to the second power and / or the second repetition rate, wherein the first power is greater than the second power, and the first repetition rate is greater than the second repetition rate. If the current laser scribing level is the ITO layer, it means that the laser scribing has exceeded the target scribing layer (hole transport layer), and the laser is controlled to stop the scribing process. Therefore, when the laser marking has not yet reached the target marking layer, laser marking is performed with a higher laser power and / or repetition rate to improve the marking efficiency. When the target marking layer is reached, laser marking is performed with a relatively low laser power and / or repetition rate to avoid laser marking with a higher laser power and / or repetition rate. The marking process is completed in a very short time, avoiding the detection reaction taking time and resulting in excessive laser marking.

[0045] The embodiment of the present disclosure provides a laser scribing control method, including: collecting a plasma spectrum image generated by laser breakdown of a material when laser scribing is performed on a multi-layer composite material to be processed based on a configured spectrometer; analyzing the collected plasma spectrum image to determine the current laser scribing level; and controlling the laser scribing based on the determined current laser scribing level. That is, the current laser scribing level is determined by the plasma spectrum image generated by the laser breakdown of the material collected by the spectrometer, and the laser scribing is controlled according to the determined current laser scribing level, so as to prevent excessive or insufficient laser scribing.

[0046] The present disclosure provides a laser scribing control method and device, such as Figure 3 As shown, the device comprises:

[0047] The laser emission assembly is used to generate a laser 2 for laser scribing a multilayer composite material 4 to be processed. The multilayer composite material to be processed is a perovskite photovoltaic material, or other multilayer composite materials to which the laser scribing control method disclosed in the present invention can be applied. Figure 2 As shown, the perovskite photovoltaic material includes a glass layer, an ITO layer, a hole transport layer, a perovskite layer, an electron transport layer, and a metal electrode layer.

[0048] Specifically, Figure 3 As shown, the laser emission assembly may include an ultrafast laser 7, a scanning galvanometer 1, and a focusing lens 3. The ultrafast laser 7 emits an ultrafast laser, which is guided by the scanning galvanometer 1 and focused by the focusing lens 3 onto the surface 4 of the multilayer composite material. When marking, the material is broken down to generate plasma to release a characteristic spectrum 5, which is absorbed by the spectrometer probe 6, and the characteristic spectrum is analyzed and compared to determine the current material level.

[0049] The spectrometer is used to collect plasma spectrum images generated when the laser breaks through the material when the multi-layer composite material to be processed is laser-marked, and is used to analyze the collected plasma spectrum images to determine the current laser marking level.

[0050] Specifically, the spectrometer probe 6 of the spectrometer may adopt a coaxial or paraxial detection optical path to absorb or collect the plasma release characteristics 5 generated by the laser scribing and breakdown of the material.

[0051] Specifically, the probe of the spectrometer is equipped with a cutoff filter. The information collected by the spectrometer includes the characteristic spectrum of the sample under the action of laser, and different materials will show different characteristic peaks. The function of the cutoff filter is to remove the non-characteristic peaks, thereby ensuring the accuracy of the detection. The miscellaneous peaks may include the processing laser reflected by the sample, the intrinsic reflected light of the sample, the ambient light outside the equipment, etc.

[0052] The industrial computer is used for controlling the laser marking based on the determined current laser marking level.

[0053] Specifically, the industrial computer is also used for at least one of the following: if the current laser marking level has not reached the target marking level, controlling the laser generating the laser to perform laser marking processing according to the first power and / or the second repetition rate; if the current laser marking level is the target marking level, controlling the laser to perform laser marking processing according to the second power and / or the second repetition rate, the first power is greater than the second power, and the first repetition rate is greater than the second repetition rate; if the current laser marking level has exceeded the target marking level, controlling the laser to stop the marking processing.

[0054] For example, Figure 2 As shown, taking the laser P2 processing link as an example, the working process of the device can be: the ultrafast laser 7 emits an ultrafast laser, which is guided by the scanning galvanometer 1 and focused by the focusing lens 3 to the surface of the thin-film battery. When marking, the material is broken down to generate plasma to release characteristic spectrum 5, and the characteristic spectrum is absorbed and analyzed by the spectrometer probe 6 to compare and judge the current processing state and level. As the processing proceeds, the laser peels off the electron transport layer, perovskite layer, and hole transport layer layer by layer, and finally reaches the ITO layer. After the spectrometer recognizes the special spectrum generated by the ITO layer processing, it confirms that the laser processing is in place and the processing of the P2 layer is successfully completed.

[0055] The present disclosure provides a laser scribing control device, which determines the current laser scribing level through a plasma spectrum image generated by laser breakdown of a material collected by a spectrometer, and performs laser scribing control according to the determined current laser scribing level, thereby preventing excessive or insufficient laser scribing.

[0056] It should also be noted that the illustrations provided in the following embodiments are only schematic illustrations of the basic concept of the embodiments of the present disclosure. The drawings only show components related to the embodiments of the present disclosure rather than being drawn according to the number, shape and size of components in actual implementation. In actual implementation, the type, quantity and proportion of each component may be changed arbitrarily, and the component layout may also be more complicated.

[0057] The following embodiments of the present disclosure are provided by specific specific examples to illustrate the embodiments of the present disclosure. Those skilled in the art can easily understand other advantages and effects of the present disclosure from the contents disclosed in this specification. Obviously, the described embodiments are only a part of the embodiments of the present disclosure, rather than all of the embodiments. The present disclosure can also be implemented or applied through other different specific embodiments, and the details in this specification can also be modified or changed in various ways based on different viewpoints and applications without departing from the spirit of the present disclosure. It should be noted that the following embodiments and features in the embodiments can be combined with each other without conflict. Based on the embodiments in the present disclosure, all other embodiments obtained by ordinary technicians in the field without making creative work are within the scope of protection of the present disclosure.

[0058] It should be noted that various aspects of the embodiments within the scope of the appended claims are described below. It should be apparent that the aspects described herein may be embodied in a wide variety of forms, and any specific structure and / or function described herein is merely illustrative. Based on the present disclosure, it should be understood by those skilled in the art that an aspect described herein may be implemented independently of any other aspect, and two or more of these aspects may be combined in various ways. For example, any number of aspects described herein may be used to implement the device and / or practice the method. In addition, other structures and / or functionalities other than one or more of the aspects described herein may be used to implement this device and / or practice this method.

[0059] The embodiments described above are part of the embodiments of the present disclosure, but not all of them. Based on the embodiments of the present disclosure, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the embodiments of the present disclosure.

[0060] In the description of the embodiments of the present disclosure, it should be noted that the terms "center", "up", "down", "left", "right", "vertical", "horizontal", "inside", "outside", etc., indicating the orientation or positional relationship, are based on the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the embodiments of the present disclosure and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the embodiments of the present disclosure. In addition, the terms "first", "second", and "third" are used for descriptive purposes only and cannot be understood as indicating or implying relative importance.

[0061] In the description of the embodiments of the present disclosure, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in the embodiments of the present disclosure can be understood according to specific circumstances.

[0062] The above are only specific implementations of the embodiments of the present disclosure, but the protection scope of the embodiments of the present disclosure is not limited thereto. Any changes or replacements that can be easily thought of by any technician familiar with the technical field within the technical scope disclosed in the embodiments of the present disclosure should be included in the protection scope of the embodiments of the present disclosure. Therefore, the protection scope of the embodiments of the present disclosure should be based on the protection scope of the claims.

Claims

1. A laser scribing control method, characterized in that: include: The configured spectrometer collects the plasma spectrum image generated by the laser breaking through the material when the multi-layer composite material to be processed is laser scribed; Analyze the collected plasma spectrum image to determine the current laser scribing level; Based on the determined current laser scribing level, laser scribing control is performed.

2. The method according to claim 1, characterized in that The multilayer composite material to be processed is a perovskite photovoltaic material.

3. The method according to claim 2, characterized in that The perovskite photovoltaic material includes a glass layer, an ITO layer, a hole transport layer, a perovskite layer, an electron transport layer, and a metal electrode layer.

4. The method according to claim 1, characterized in that: Based on the determined current laser scribing level, laser scribing control is performed, including at least one of the following: If the current laser scribing level has not reached the target scribing level, controlling the laser generating laser to perform laser scribing processing according to the first power and / or the second repetition rate; If the current laser scribing level is a target scribing layer, controlling the laser to perform laser scribing processing according to a second power and / or a second repetition rate, wherein the first power is greater than the second power, and the first repetition rate is greater than the second repetition rate; If the current laser scribing level exceeds the target scribing level, the laser is controlled to stop the scribing process.

5. A laser scribing control device, characterized in that: include: A laser emitting assembly, used for generating laser light for laser scribing of a multi-layer composite material to be processed; A spectrometer for collecting plasma spectrum images generated when the laser penetrates the material when the multi-layer composite material to be processed is laser-scored; and for analyzing the collected plasma spectrum images to determine the current laser scribing level; The industrial computer is used for controlling the laser marking based on the determined current laser marking level.

6. The device according to claim 5, characterized in that include: The spectrometer adopts a coaxial or paraxial detection light path.

7. The device according to claim 5, characterized in that The probe of the spectrometer is equipped with a cut-off filter.

8. The device according to claim 5, characterized in that The multilayer composite material to be processed is a perovskite photovoltaic material.

9. The device according to claim 8, characterized in that The perovskite photovoltaic material includes a glass layer, an ITO layer, a hole transport layer, a perovskite layer, an electron transport layer, and a metal electrode layer.

10. The device according to any one of claims 5 to 9, characterized in that: The industrial computer is also used for at least one of the following: if the current laser scribing level has not reached the target scribing level, controlling the laser generating laser to perform laser scribing processing according to the first power and / or the second repetition rate; if the current laser scribing level is the target scribing level, controlling the laser to perform laser scribing processing according to the second power and / or the second repetition rate, the first power is greater than the second power, and the first repetition rate is greater than the second repetition rate; if the current laser scribing level has exceeded the target scribing level, controlling the laser to stop the scribing processing.

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