Directional cutting method and equipment for single crystal ingot

Abstract

The invention relates to the technical field of semiconductor processing, and provides a directional cutting method and equipment for a single crystal ingot. The method comprises the steps that an X-ray transmitting tube and an X-ray receiver on an orientation assembly are adjusted according to a reference wafer of a standard crystal orientation, the adjusted orientation assembly is obtained, and according to the adjusted orientation assembly, the horizontal angle and the vertical angle of a to-be-cut crystal ingot are adjusted through a crystal loading platform so that the tangent plane of the to-be-cut crystal ingot can be matched with the cutting plane; the adjusted to-be-cut crystal ingot is cut, a cut wafer is obtained, the crystal orientation of the cut wafer is measured, the angle deviation between the horizontal direction and the vertical direction of the cut wafer is obtained, and the compensation value of the cutting equipment is calculated based on the angle deviation; the compensation value is used for conducting angle compensation on the crystal loading platform deck, a new to-be-cut crystal ingot is cut, a wafer conforming to the target crystal orientation is obtained, and the cutting equipment comprises an orientation assembly and the crystal loading platform deck. The problem that in the prior art, the wafer cutting precision is not high enough is solved.

Description

Technical Field

[0001] The present application relates to the field of semiconductor processing technology, and in particular to a method and equipment for directional cutting of a single crystal ingot. Background Art

[0002] The directional cutting of CdZnTe crystals requires very high precision, and the deviation angle from the required crystal plane must be ≤0.1°, and the smaller the deviation angle, the better. The angle adjustment of traditional inner circle cutting machines can achieve an accuracy of 1′~2′, which can achieve high-precision cutting, but the cutting efficiency is low and it is difficult to adapt to large-scale production requirements. Therefore, the existing technology mostly uses a multi-wire cutting process to batch cut crystals. In the multi-wire cutting process, the cutting wires are wound into a wire mesh, and multiple wafers can be cut at the same time in one cut. However, in the existing multi-wire cutting process, it is impossible to adjust the cutting angle in a piece-by-piece directional cutting manner like inner circle cutting, resulting in the existing cutting wafers being unable to meet the high-precision cutting requirements. Summary of the invention

[0003] In view of this, an embodiment of the present application provides a method and device for directional cutting of a single crystal ingot to solve the problem of insufficient precision in cutting wafers in the prior art.

[0004] According to a first aspect of an embodiment of the present application, a method for directional cutting of a single crystal ingot is provided, comprising:

[0005] According to the reference wafer of the standard crystal orientation, the X-ray transmitting tube and the X-ray receiver on the orientation assembly are calibrated to obtain a calibrated orientation assembly, the calibrated orientation assembly indicates that the orientation plane of the orientation assembly coincides with the cutting plane of the cutting equipment, and the orientation plane is defined by the X-ray emission and reception directions; the crystal ingot to be cut is loaded into the crystal loading platform and fixed, and the crystal ingot to be cut has a cut surface corresponding to the standard crystal orientation; according to the calibrated orientation assembly, the horizontal angle and the vertical angle of the crystal ingot to be cut are adjusted by the crystal loading platform to obtain an adjusted crystal ingot to be cut, and the cut surface of the adjusted crystal ingot to be cut matches the cutting surface; the adjusted crystal ingot to be cut is cut to obtain a cut wafer, the crystal orientation of the cut wafer is measured to obtain the angular deviation of the cut wafer in the horizontal and vertical directions, and the compensation value of the cutting equipment is calculated based on the angular deviation; the compensation value is used to compensate the angle of the crystal loading platform and cut the new crystal ingot to be cut to obtain a wafer meeting the target crystal orientation, wherein the cutting equipment includes an orientation assembly and a crystal loading platform.

[0006] According to a second aspect of an embodiment of the present application, a directional cutting device for a single crystal ingot is provided, comprising: a device body; an directional component, which is connected to the device body via an directional component position adjustment device, and is used to detect the crystal orientation of the crystal ingot to be cut; a crystal loading platform, which is connected to the device body via a platform lifting device, and is used to load and adjust the position of the crystal ingot to be cut.

[0007] Compared with the prior art, the embodiments of the present application have the following beneficial effects: by adjusting the X-ray transmitting tube and the X-ray receiver on the directional assembly, the cutting surface of the cutting equipment is made to coincide with the directional surface; the crystal ingot to be cut, which has been cut out to approximate the required crystal surface, i.e., the cutting surface, is loaded into the crystal loading platform of the cutting equipment and fixed; the position of the crystal ingot to be cut is adjusted by the directional surface of the adjusted directional assembly, the adjusted position of the crystal ingot to be cut is locked, and after the cutting is completed, the crystal orientation of the cut wafer is measured, and the angle compensation value is calculated according to the horizontal and vertical angle deviations of the cut wafer; in subsequent cutting, after the crystal loading platform is adjusted in the horizontal and vertical directions so that the current is at the peak value, the crystal loading platform is compensated for the corresponding angles according to the horizontal and vertical deviation angles between the directional surface of the directional assembly and the actual cutting surface, and after compensation, the new crystal ingot to be cut is cut to obtain a cut wafer with the required crystal orientation. In this way, the facet of the ingot to be cut can be oriented directly after the ingot is loaded, and each point of the facet can be oriented to obtain the average theoretical deviation angle. The position of the ingot to be cut can be adjusted before cutting, and the theoretical angle of equipment deviation can be further compensated in subsequent cutting according to the test results after the first cutting, thereby further improving the orientation accuracy to meet the requirements of high-precision oriented cutting of wafers. BRIEF DESCRIPTION OF THE DRAWINGS

[0008] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0009] Figure 1 It is a schematic diagram of a process of a directional cutting method of a single crystal ingot provided in an embodiment of the present application;

[0010] Figure 2 It is a structural schematic diagram of a directional cutting device for a single crystal ingot provided in an embodiment of the present application;

[0011] Figure 3 It is a structural schematic diagram of a wafer loading platform provided in an embodiment of the present application;

[0012] Figure 4 It is a structural schematic diagram of a directional component provided in an embodiment of the present application. DETAILED DESCRIPTION

[0013] In the following description, specific details such as specific system structures, technologies, etc. are provided for the purpose of illustration rather than limitation, so as to provide a thorough understanding of the embodiments of the present application. However, it should be clear to those skilled in the art that the present application may also be implemented in other embodiments without these specific details. In other cases, detailed descriptions of well-known systems, devices, circuits, and methods are omitted to prevent unnecessary details from obstructing the description of the present application.

[0014] Cadmium zinc telluride (CdZnTe, abbreviated as CZT) is a semiconductor material with excellent performance and is widely used in the field of third-generation infrared detectors. As the preferred substrate material for epitaxial growth of mercury cadmium telluride (HgCdTe) materials, CdZnTe and HgCdTe have the same zinc blende structure. By adjusting the zinc component, the lattices of the two can be completely matched, thereby epitaxially growing high-quality HgCdTe thin film materials. Generally speaking, liquid phase epitaxial growth of HgCdTe thin films is <111> The crystal orientation of CdZnTe substrate is carried out on the surface of CdZnTe substrate. According to the related paper "The influence of the crystal orientation of CdZnTe substrate on the surface morphology of HgCdTe film", in order to better ensure the quality of HgCdTe epitaxial materials, the deviation angle between the CdZnTe substrate surface and the (111) plane should be controlled as small as possible, so as to avoid mismatch dislocations, microcracks, abnormal surface morphology of epitaxial film and other problems caused by crystal orientation deviation. In the molecular beam epitaxy of HgCdTe film process, the (211) plane CdZnTe substrate is generally selected as the base material, and the crystal orientation deviation angle of the substrate is also very high. Therefore, when cutting CdZnTe crystals, directional cutting is required to prepare CdZnTe wafers with the lowest possible deviation angle (no more than 0.1°) with the required crystal plane, so as to provide a good crystal orientation foundation for subsequent substrate processing technology. Therefore, for the field of CdZnTe material processing, it is very necessary to study the high-directional precision cutting process of CdZnTe crystals.

[0015] At present, the only way to achieve high-precision directional cutting of CdZnTe crystals is the inner circle cutting method. The inner circle cutting method can perform high-resolution (1′~2′) angle fine-tuning according to the crystal orientation of the previous wafer, and achieve high-precision directional cutting after repeated adjustments. However, the inner circle cutting method is a piece-by-piece cutting method with low efficiency, large surface damage to the wafer, and it is difficult to meet the requirements of large-scale production. As a new type of cutting equipment, the multi-wire cutting machine has the advantages of high cutting efficiency and low damage. The current common multi-wire cutting orientation method generally calculates the crystal bonding angle according to the required crystal orientation, and then achieves it through fixed-angle bonding. The existing multi-wire cutting technology is often used for hard and brittle materials such as silicon carbide and silicon. The requirements for the crystal orientation deviation angle of these materials are not strict during application, and a deviation of ≤0.5° can meet the requirements. There is no high-precision multi-wire cutting orientation method. When CdZnTe substrates are used for HgCdTe thin film epitaxy, the crystal orientation deviation accuracy requirement is very high, which needs to be ≤0.1°. If the CdZnTe crystals oriented on the inner circle cutting machine are directly transferred to the multi-wire cutting machine, the angles often change due to the loading repeatability, and the use requirements cannot be met. Therefore, the present application proposes a method for cutting CdZnTe crystals efficiently and accurately, so as to meet the high-precision requirements of cutting wafers under multi-wire cutting.

[0016] A method and device for directional cutting of a single crystal ingot according to an embodiment of the present application will be described in detail below with reference to the accompanying drawings.

[0017] Figure 1 Schematic diagram of a process for directional cutting of a single crystal ingot provided in an embodiment of the present application. Figure 1 As shown, the directional cutting method of the single crystal ingot includes:

[0018] S101, calibrating the X-ray transmitting tube and the X-ray receiving device on the directional assembly according to a reference wafer of a standard crystal orientation to obtain a calibrated directional assembly, wherein the calibrated directional assembly indicates that the directional surface of the directional assembly coincides with the cutting surface of the cutting device, and the directional surface is defined by the X-ray transmitting and receiving directions.

[0019] Specifically, a reference wafer with a standard crystal orientation can represent a wafer with a required crystal orientation, and use this as a debugging wafer for the equipment to perform directional debugging on the directional component, so that the angle of the crystal ingot to be cut can be adjusted using the calibrated directional component, so that the adjusted crystal ingot to be cut can be cut into a cut wafer with a crystal orientation consistent with the standard crystal orientation, that is, the cut wafer can meet high-precision requirements, for example, the crystal orientation angle of the cut wafer is less than or equal to 0.1° from the required standard crystal orientation, and the crystal ingot to be cut can be understood as a single crystal ingot.

[0020] When calibrating the directional assembly, the directional assembly can be lowered to the test position, and the cross-section of the ingot to be cut can be tested in a horizontal angle test state; the crystal mounting platform can be rotated in the horizontal direction to change the relative angle between the cross-section of the ingot and the directional assembly, and the current change is observed to make it at a peak position; the directional assembly can be switched to a vertical state, and the crystal mounting platform can be rotated in the vertical direction to change the relative angle between the cross-section of the ingot to be cut and the directional assembly, and the current change is observed to make it at a peak position, and the position of the X-ray transmitting tube and the pitch angles of the X-ray transmitting tube and the receiver are recorded, so that a calibrated directional assembly can be obtained.

[0021] S102, loading the crystal ingot to be cut into the crystal loading platform and fixing it, the crystal ingot to be cut having a section corresponding to the standard crystal orientation.

[0022] Specifically, the crystal ingot to be cut may be cut once first so as to cut out a cut surface corresponding to a desired crystal plane, that is, a cut surface corresponding to a standard crystal orientation.

[0023] In some embodiments, the crystal ingot to be cut is loaded into a crystal loading platform and fixed, including: using an inner circle cutting machine to cut the original crystal ingot to be cut to obtain a crystal ingot to be cut with a cut surface; polishing the cut surface to obtain a polished crystal ingot to be cut; and installing the polished crystal ingot to be cut on the crystal loading platform.

[0024] According to the technical solution provided in the above embodiment, the original crystal ingot to be cut can be cut by an inner circle cutting machine to obtain a crystal ingot to be cut having a cut surface corresponding to the standard crystal direction. The cut surface can be polished to obtain a crystal ingot to be cut after polishing the cut surface. The polished crystal ingot to be cut can be mounted on a crystal loading platform, which can increase the accuracy of cutting the wafer and reduce material loss.

[0025] S103, according to the adjusted orientation assembly, the horizontal angle and the vertical angle of the crystal ingot to be cut are adjusted by the crystal loading platform to obtain an adjusted crystal ingot to be cut, and the characteristic cutting surface of the adjusted crystal ingot to be cut matches the cutting surface.

[0026] Specifically, several cutting wires can be wound around the side of the roller close to the directional component of the cutting equipment to achieve multi-wire cutting. The cutting wires correspond to the cutting direction. Therefore, the matching of the cut surface of the crystal ingot to be cut with the cutting direction can be understood as adjusting the crystal ingot to be cut so that the cut surface obtained by the initial cutting is consistent with the cutting direction, thereby further accurately adjusting the position of the crystal ingot to be cut so that the cut wafer meets the precision requirements.

[0027] S104, cutting the adjusted ingot to be cut to obtain cut wafers, measuring the crystal orientation of the cut wafers to obtain the angular deviations of the cut wafers in the horizontal and vertical directions, and calculating the compensation value of the cutting equipment based on the angular deviations.

[0028] Specifically, when cutting the ingot to be cut, if batch cutting is required, the cutting wires can be wound into a mesh on the cutting equipment so that multiple required wafers can be cut off at the same time in one cut. If only one wafer is required, only one cutting wire can be set. There is no limitation here, but if not specified in the embodiments of the present application, the corresponding embodiment is assumed to be multi-wire cutting.

[0029] S105, using the compensation value to perform angle compensation on the wafer mounting stage and cutting the new ingot to be cut to obtain a wafer that meets the target crystal orientation, wherein the cutting equipment includes an orientation component and a wafer mounting stage.

[0030] According to the technical solution provided in the embodiments of the present application, the orientation component is calibrated by using a reference chip of a standard crystal orientation so that the orientation surface of the calibrated orientation component is consistent with the cutting surface, and then after the crystal ingot to be cut is loaded on the crystal loading platform, the position of the crystal ingot to be cut can be adjusted by the calibrated orientation component to obtain the position of the crystal ingot to be cut when the current formed by X-rays in the orientation component is at a peak value, and then the crystal ingot to be cut can be cut to achieve the cutting of the wafer, and after the cutting is completed, the angle compensation is calculated by cutting the horizontal and vertical angle deviation of the wafer. In the subsequent cutting, after the crystal loading platform is adjusted in the horizontal and vertical directions so that the current is at a peak value, the crystal loading platform is respectively compensated for the corresponding angles according to the horizontal and vertical deviation angles between the orientation surface of the orientation component and the actual cutting surface. After compensation, the new crystal ingot to be cut can be cut to obtain the wafer with the required crystal orientation, that is, the wafer that meets the target crystal orientation.

[0031] In some embodiments, the X-ray transmitting tube and the X-ray receiver on the directional assembly are calibrated according to a reference wafer of a standard crystal orientation to obtain a calibrated directional assembly, including: mounting graphite on a crystal mounting platform, cutting the graphite once to obtain a cutting plane of the graphite, and pasting a reference wafer on the cutting plane of the graphite; when the directional assembly is in a horizontal rotation position, adjusting the angle between the X-ray transmitting tube and the reference wafer until the X-ray receiver signal reaches a maximum value, and obtaining the position corresponding to the X-ray transmitting tube; when the directional assembly is in a vertical rotation position, adjusting the pitch angles of the X-ray transmitting tube and the X-ray receiver until the X-ray receiver signal reaches a maximum value, and obtaining the pitch angles corresponding to the X-ray transmitting tube and the X-ray receiver; the calibrated directional assembly represents the position of the X-ray transmitting tube when the X-ray receiver signal reaches a maximum value, as well as the pitch angles corresponding to the X-ray transmitting tube and the X-ray receiver.

[0032] Specifically, graphite can be installed and cut to obtain a cutting plane of the graphite, which can be equivalent to the cutting plane of the cutting equipment. Therefore, a reference chip with a standard crystal orientation is pasted on the cutting plane, and the reference chip is repeatedly pushed during the bonding process so that there is no bubble gap between it and the cutting plane of the graphite. In this way, the plane of the reference chip can be regarded as a cutting plane with the same effect, and then the directional assembly can be adjusted based on this reference chip to obtain a calibrated directional assembly.

[0033] Furthermore, the essence of calibrating the orientation component can be regarded as calibrating the X-ray transmitting tube and the X-ray receiver on the orientation component, so that when the orientation component is in a horizontal rotation position, the angle between the X-ray transmitting tube and the reference chip is adjusted until the X-ray receiver signal reaches a maximum value, and the corresponding position of the X-ray transmitting tube is obtained; when the orientation component is in a vertical rotation position, the pitch angle of the X-ray transmitting tube and the X-ray receiver is adjusted until the X-ray receiver signal reaches a maximum value, and the corresponding pitch angle of the X-ray transmitting tube and the X-ray receiver is obtained; the corresponding position and pitch angle are recorded to obtain the calibrated orientation component.

[0034] According to the technical solution provided in the embodiment of the present application, by calibrating the orientation component through a reference wafer of standard crystal orientation, the orientation surface of the orientation component can be made to highly coincide with the cutting surface, and then the calibrated orientation component can be used to adjust the position of the crystal ingot to be cut to obtain a cutting crystal surface that meets high-precision requirements.

[0035] In some embodiments, the horizontal angle and vertical angle of the crystal ingot to be cut are adjusted by a crystal mounting platform according to a calibrated directional component to obtain an adjusted crystal ingot to be cut, including: using an angle adjustment device of the crystal mounting platform to adjust the angle of the crystal ingot to be cut according to the signal strength detected by the X-ray receiver when the calibrated directional component is in the horizontal rotation position and the vertical rotation position, to obtain an initial deflection angle of the crystal mounting platform; moving the calibrated directional component to measure the signal strength of the section at different deflection angles, and calculating the theoretical deflection angle of the crystal mounting platform; adjusting the crystal mounting platform according to the initial deflection angle and the theoretical deflection angle to obtain the adjusted crystal ingot to be cut.

[0036] Specifically, the angle adjustment device on the crystal mounting platform can be used to adjust the angle of the crystal ingot to be cut at the horizontal position and vertical position of the directional component, so that the X-ray signal intensity reaches the maximum value at both positions, and the initial deflection angle of the crystal mounting platform is recorded at this time. Move the directional component, measure the deflection angles at different positions on the polished surface of the crystal ingot, and calculate the average deflection angle, that is, the theoretical deflection angle to be adjusted by the crystal mounting platform. After the adjustment is completed, fix the crystal mounting platform, and then the first directional multi-wire cutting of the crystal ingot can be performed.

[0037] Furthermore, after the first directional cutting of the ingot to be cut is completed, the wafer close to the directional component can be removed and polished, and then the horizontal and vertical angle deviations of the wafer can be measured, and the angle deviations in the two directions can be recorded as the horizontal and vertical compensation angle errors of the equipment (generally ≤0.1°). When cutting other subsequent ingots, each time the directional component is used to obtain the theoretical deflection angle of the ingot loading platform, the horizontal and vertical compensation angle errors of the equipment recorded during the first multi-line cutting of the ingot are further compensated to obtain the final deflection angle to be adjusted for the loading platform. Wafers cut according to this step can meet the requirements of high-precision directional cutting wafers.

[0038] Of course, in the subsequent cutting process, the orientation component can be adjusted again to make the orientation surface and the cutting surface more coincident, thereby reducing the angle compensation steps and further improving the accuracy of cutting the wafer.

[0039] In some embodiments, the angle of the ingot to be cut is displayed in real time by an angle display device, and the angle display device includes an angle sensor and a digital level.

[0040] Specifically, during the process of adjusting the position angle of the ingot to be cut, in order to make the adjustment operation more efficient, the angle change can be displayed in real time through an angle display device, which can be an angle sensor or a digital level.

[0041] Figure 2 is a schematic diagram of the structure of a directional cutting device for a single crystal ingot provided in an embodiment of the present application; the cutting device can be used to perform the cutting method described above, such as Figure 2 As shown, the single crystal ingot directional cutting device 1 includes: a device body 10, a crystal loading platform 20, an directional assembly 30, a platform lifting device 40 and an directional assembly position adjustment device 50.

[0042] The orientation assembly 30 is used to adjust the position of the ingot to be cut in the crystal loading platform 20 during the orientation cutting process of the single crystal ingot. The crystal loading platform 20 is connected to the equipment body 10 through the platform lifting device 40, and the crystal loading platform 20 is used to load and adjust the position of the ingot to be cut.

[0043] It should be noted that the orientation component 30 can be connected to the equipment body through the orientation component position adjustment device and moved through the orientation component position adjustment device 50, that is, the orientation component 30 can be moved to the crystal orientation test position according to the position of the crystal ingot to be cut in the crystal loading platform 20, so that the crystal orientation test effect is optimal.

[0044] It can be seen from the above embodiments that the cutting device 1 can dynamically test the position of the crystal ingot to be cut in the crystal loading platform by changing the position of the directional component 30, and further adjust the position of the crystal ingot to be cut, so as to obtain an accurate cutting surface, and then the above-mentioned cutting method can be implemented through the cutting device 1 to obtain a precisely cut wafer.

[0045] Figure 3 This is a schematic diagram of the structure of a wafer loading platform provided in an embodiment of the present application. Figure 3 The crystal loading platform 20 includes: a horizontal rotating device 21, which is used to adjust the horizontal angle of the crystal ingot to be cut; a vertical rotating device 24, which is used to adjust the vertical angle of the crystal ingot to be cut; a crystal loading fixture 25, which is used to stabilize the crystal ingot to be cut; the horizontal rotating device 21, the vertical rotating device 24 and the crystal loading fixture 25 are arranged in series along the vertical direction of the equipment body 10.

[0046] Specifically, the crystal ingot 26 to be cut can be fixed by the crystal loading and fixing device 25 of the crystal loading platform 10, so that the position of the crystal ingot 26 to be cut can be adjusted by the position adjustment device of the crystal loading platform 20, wherein the position adjustment device can include a horizontal rotation device 21 and a vertical rotation device 24. When the horizontal position of the crystal ingot 26 to be cut is rotated into place by the horizontal rotation device 21, the horizontal position of the crystal ingot 26 to be cut can be fixed by the horizontal locking knob 22. Similarly, when the vertical position of the crystal ingot 26 to be cut is adjusted into place by the vertical rotation device 24, the vertical position of the crystal ingot 26 to be cut can be fixed by the vertical locking knob 23.

[0047] It should be noted that after the position of the crystal ingot 26 to be cut is fixed, the crystal ingot 26 to be cut can be cut in batches through the cutting wire mesh 27 to obtain a plurality of cut wafers with a target crystal orientation.

[0048] In this way, the high-precision and high-efficiency cutting requirements for the crystal ingot 26 to be cut can be met.

[0049] also, Figure 4 This is a schematic diagram of the structure of a directional component provided in an embodiment of the present application; please refer to Figure 4 The directional assembly 30 includes: an X-ray transmitting tube 33, an X-ray receiver 32 and a pitch angle adjustment device 34. The X-ray transmitting tube 33 is used to transmit X-rays to the ingot 26 to be cut, and stimulate the ingot to be cut to generate an X-diffraction signal; the X-ray receiver 32 is used to receive the X-ray signal diffracted by the ingot to be cut; the pitch angle adjustment device 34 is used to adjust the pitch angles of the X-ray transmitting tube and the X-ray receiver.

[0050] Specifically, the X-ray transmitting tube 33 and the X-ray receiver 32 are installed on the orientation component platform 31 of the orientation component 30 for easy adjustment. In the initial state, the orientation component plane of the orientation component is roughly vertical, and the angle of the counter and the angle of the X-ray transmitting tube 33 can basically meet the requirement of the diffraction angle 2θ of the crystal plane required for the crystal ingot 26 to be cut.

[0051] It should be noted that when adjusting the angle of the orientation component, there are two ways of adjusting the angle. One is to adjust the horizontal deflection angle of the X-ray receiver 32 around the central measuring point when the orientation component 30 is in the horizontal rotation position. The other is to adjust the pitch angle of the X-ray transmitting tube 33 and the X-ray receiver 32 through the pitch angle adjustment device 34 when the orientation component 30 is rotated to the vertical rotation position. The angle adjustment angle that satisfies the crystal mounting platform 20 can be precisely rotated in the horizontal and vertical directions is adjusted with an adjustment resolution of ≤1". In this way, the position of the orientation component 30 can be precisely adjusted, so that the orientation surface in the orientation component 30 is highly overlapped with the cutting surface, which is convenient for subsequent precise ingot cutting to obtain high-precision cut wafers.

[0052] All the above optional technical solutions can be arbitrarily combined to form optional embodiments of the present application, which will not be described one by one here.

[0053] It should be understood that the size of the serial numbers of the steps in the above embodiments does not mean the order of execution. The execution order of each process should be determined by its function and internal logic, and should not constitute any limitation on the implementation process of the embodiments of the present application.

[0054] The above embodiments are only used to illustrate the technical solutions of the present application, rather than to limit them. Although the present application has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or make equivalent replacements for some of the technical features therein. These modifications or replacements do not deviate the essence of the corresponding technical solutions from the spirit and scope of the technical solutions of the embodiments of the present application, and should all be included in the protection scope of the present application.

Claims

1. A method for directional cutting of a single crystal ingot, characterized in that: include: Calibrate the X-ray transmitting tube and the X-ray receiving device on the directional assembly according to a reference wafer of a standard crystal orientation to obtain a calibrated directional assembly, wherein the calibrated directional assembly indicates that an directional surface of the directional assembly coincides with a cutting surface of a cutting device, and the directional surface is defined by the X-ray transmitting and receiving directions; Loading a crystal ingot to be cut into a crystal loading platform and fixing it, wherein the crystal ingot to be cut has a section corresponding to the standard crystal orientation; According to the adjusted orientation assembly, the horizontal angle and the vertical angle of the crystal ingot to be cut are adjusted by the crystal loading platform to obtain the adjusted crystal ingot to be cut, wherein the adjusted crystal ingot to be cut indicates that the cut surface matches the cut surface; Cutting the adjusted crystal ingot to be cut to obtain a cut wafer, measuring the crystal orientation of the cut wafer to obtain the angular deviation of the cut wafer in the horizontal and vertical directions, and calculating the compensation value of the cutting device based on the angular deviation; The compensation value is used to perform angle compensation on the wafer mounting stage and to cut a new ingot to be cut, so as to obtain a wafer that meets the target crystal orientation, wherein the cutting equipment includes the orientation component and the wafer mounting stage.

2. The method according to claim 1, characterized in that The method of calibrating the X-ray transmitting tube and the X-ray receiver on the directional assembly according to the reference wafer of the standard crystal orientation to obtain the calibrated directional assembly comprises: Mounting graphite on the wafer mounting stage, cutting the graphite once to obtain a cutting plane of the graphite, and pasting the reference wafer on the cutting plane of the graphite; When the orientation assembly is in a horizontal rotation position, adjusting the angle between the X-ray transmitting tube and the reference wafer until the X-ray receiver signal reaches a maximum value, thereby obtaining the corresponding position of the X-ray transmitting tube; When the orientation assembly is in a vertical rotation position, the pitch angles of the X-ray transmitting tube and the X-ray receiver are adjusted until the X-ray receiver signal reaches a maximum value, thereby obtaining the pitch angles corresponding to the X-ray transmitting tube and the X-ray receiver; The calibrated directional assembly represents the position of the X-ray transmitting tube when the X-ray receiver signal reaches a maximum value, and the corresponding elevation angles of the X-ray transmitting tube and the X-ray receiver.

3. The method according to claim 1, characterized in that The step of loading the ingot to be cut into the crystal loading platform and fixing it comprises: Using an inner circle cutter to cut the original ingot to be cut, to obtain the ingot to be cut having the cut surface; The cut surface is polished to obtain the polished crystal ingot to be cut, and the polished crystal ingot to be cut is mounted on the crystal mounting platform.

4. The method according to claim 2, characterized in that: The step of adjusting the horizontal angle and the vertical angle of the crystal ingot to be cut by the crystal loading platform according to the adjusted orientation assembly to obtain the adjusted crystal ingot to be cut comprises: Using the angle adjustment device of the crystal loading platform, the angle of the crystal ingot to be cut is adjusted according to the signal strength detected by the X-ray receiver when the calibrated orientation assembly is in the horizontal rotation position and the vertical rotation position, so as to obtain the initial deflection angle of the crystal loading platform; Moving the calibrated directional assembly, measuring the signal strength of the section at different deflection angles, and calculating the theoretical deflection angle of the crystal mounting stage; The crystal loading platform is adjusted according to the initial deflection angle and the theoretical deflection angle to obtain the adjusted crystal ingot to be cut.

5. The method according to claim 4, characterized in that The angle of the ingot to be cut is displayed in real time by an angle display device, and the angle display device includes an angle sensor and a digital level ruler.

6. A directional cutting device for a single crystal ingot, the device being used to perform the method according to any one of claims 1 to 5, characterized in that: include: Equipment body; An orientation component, the orientation component is connected to the equipment body through an orientation component position adjustment device, and the orientation component is used to detect the crystal orientation of the ingot to be cut; A crystal loading platform is connected to the equipment body through a platform lifting device, and the crystal loading platform is used to load and adjust the position of the crystal ingot to be cut.

7. The device according to claim 6, characterized in that The wafer loading platform comprises: A horizontal rotating device, the horizontal rotating device is used to adjust the horizontal angle of the ingot to be cut; A vertical rotating device, the vertical rotating device is used to adjust the vertical angle of the ingot to be cut; A crystal mounting and fixing device, the crystal mounting and fixing device is used to stabilize the crystal ingot to be cut; The horizontal rotating device, the vertical rotating device and the wafer mounting and fixing device are arranged in series along the vertical direction of the equipment body.

8. The device according to claim 6, characterized in that The directional component includes: An X-ray emitting tube, the X-ray emitting tube is used to emit X-rays to the ingot to be cut, and stimulate the ingot to be cut to generate an X-ray diffraction signal; An X-ray receiver, the X-ray receiver is used to receive an X-ray signal diffracted by the ingot to be cut; A pitch angle adjustment device, wherein the pitch angle adjustment device is used to adjust the pitch angles of the X-ray transmitting tube and the X-ray receiver.

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