Automatic SRAF Exposure Imaging Suppression Method, Device, Medium, Program Product and Terminal

Abstract

The present invention provides an automatic SRAF exposure imaging suppression method, device, medium, program product and terminal. Through multi-round iterative optimization technical means, it realizes the optimization of the SRAF placement area when interference patterns are detected in the initial exposure pattern. When the new exposure pattern meets the preset termination condition, the iterative optimization operation is ended, thus solving the problems of time waste and process complexity caused by the need to re-design the SRAF placement rules in the traditional method. The present invention not only maintains the original spatial position of the SRAF, maximally guarantees the enhancement effect on the resolution of the main pattern, but also improves the clarity and precision of the pattern, thereby improving production efficiency, simplifying the manufacturing process, and providing a more convenient solution for practical applications.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor manufacturing, and particularly to an automatic SRAF exposure imaging suppression method, device, medium, program product, and terminal. Background Art

[0002] In modern semiconductor manufacturing, the introduction of sub-resolution assist features (SRAF) has become an important means to improve the resolution of chip layouts. The main function of SRAF is to enhance the depth of focus of the lithography process and improve the clarity and consistency of imaging during the exposure process by placing assist features smaller than the resolution of the lithography machine in specific areas of the chip design. Its basic principle is to use SRAF to change the interference pattern of light, so that even in the face of the impact of process variations during the lithography process, high imaging quality and production yield can still be maintained.

[0003] However, there are still some obvious defects and challenges in the application of SRAF in the prior art. First of all, the placement of SRAF needs to follow certain design rules and strategies. An unreasonable SRAF position may lead to poor exposure phenomena in the lithography process. If the interference between the SRAF pattern and the main pattern is not effectively controlled, unexpected exposure results may occur, thus affecting the final chip design image and causing a deviation between its actual performance and the design expectation.

[0004] In addition, although the purpose of SRAF in design is not to transfer the image on the silicon wafer, in actual process operations, its impact on the surrounding light conditions may lead to unexpected imaging effects. Especially in highly integrated and dense chip designs, the placement position and shape of SRAF will directly affect the interference effect between patterns. If not properly handled, the final design image may eventually lose its original structure and features. Summary of the Invention

[0005] In view of the above-mentioned disadvantages of the prior art, the purpose of the present invention is to provide an automatic SRAF exposure imaging suppression method, device, medium, program product, and terminal, which are used to solve the problem that the existing sub-resolution assist feature (SRAF) technology may cause unexpected exposure when the placement position is unreasonable, affecting the clarity and feature consistency of chip design, and thus unable to effectively ensure the expected effect of the lithography process.

[0006] To achieve the above and other related objectives, a first aspect of the present invention provides an automatic SRAF exposure imaging suppression method, including: performing an exposure simulation algorithm for a mask configured with SRAF to generate an initial exposure pattern; detecting interference patterns in the initial exposure pattern through a matching algorithm, and if an interference pattern is detected, performing multiple rounds of iterative optimization operations on the SRAF placement area; after each round of iterative optimization operation, re-performing the exposure simulation algorithm based on the mask configured with the optimized SRAF to generate a new exposure pattern; when the new exposure pattern meets the preset termination condition, ending the iterative optimization operation.

[0007] In some embodiments of the first aspect of the present invention, the process of performing multiple rounds of iterative optimization operations on the SRAF placement area includes: determining whether the interference pattern overlaps with the SRAF placement area; if the coordinates of the interference pattern overlap with the SRAF placement area, extracting a first area to be optimized from the SRAF placement area; otherwise, extracting a second area to be optimized from the SRAF placement area; performing multiple rounds of iterative optimization operations on the first area to be optimized / second area to be optimized.

[0008] In some embodiments of the first aspect of the present invention, the process of extracting a first area to be optimized from the SRAF placement area includes: obtaining the overlapping area between the coordinates of the interference pattern and the SRAF placement area; extracting the minimum circumscribed rectangle containing the overlapping area to generate a first area to be optimized.

[0009] In some embodiments of the first aspect of the present invention, the process of extracting a second area to be optimized from the SRAF placement area includes: extracting the SRAF placement area closest to the interference pattern; vertically projecting the interference pattern onto the SRAF placement area closest to it to generate a projection length; extracting the longest width of the SRAF placement area closest to it in the projection direction; generating a second area to be optimized in the SRAF placement area closest to it based on the projection length and the longest width.

[0010] In some embodiments of the first aspect of the present invention, the shape of the first area to be optimized / second area to be optimized is a rectangle, and the process of performing multiple rounds of iterative optimization operations on the first area to be optimized / second area to be optimized includes: taking the center point of the first area to be optimized / second area to be optimized as a reference, shortening the long side and the short side of the first area to be optimized / second area to be optimized, and translating the shortened long side and short side in the direction of the center point to form an area to be removed; in the SRAF placement area, removing the area to be removed to generate an optimized SRAF.

[0011] In some embodiments of the first aspect of the present invention, the preset termination conditions include one or more of the following: the quality index of the new exposure pattern meets the preset standard; the multi-round iterative optimization operation reaches the maximum number of iterations; the new exposure pattern does not contain interfering patterns.

[0012] To achieve the above object and other related objects, the second aspect of the present invention provides an automatic SRAF exposure imaging suppression device, including: a simulation exposure module: used to execute an exposure simulation algorithm for a mask configured with SRAF to generate an initial exposure pattern; after each round of iterative optimization operation, based on the optimized SRAF, perform an exposure simulation operation on the mask again to generate a new exposure pattern; an interference detection and optimization module: used to detect interfering patterns in the initial exposure pattern through a matching algorithm, and if interfering patterns are detected, perform multi-round iterative optimization operations on the SRAF placement area; a termination condition check module: used to end the iterative optimization operation when the new exposure pattern meets the preset termination conditions.

[0013] To achieve the above object and other related objects, the third aspect of the present invention provides a computer-readable storage medium, on which a computer program is stored, and when the computer program is executed by a processor, the automatic SRAF exposure imaging suppression method is implemented.

[0014] To achieve the above object and other related objects, the fourth aspect of the present invention provides a computer program product, which includes computer program code, and when the computer program code runs on a computer, the computer is enabled to implement the automatic SRAF exposure imaging suppression method.

[0015] To achieve the above object and other related objects, the fifth aspect of the present invention provides an electronic terminal, including a memory, a processor, and a computer program stored on the memory; the processor executes the computer program to implement the automatic SRAF exposure imaging suppression method.

[0016] As described above, the automatic SRAF exposure imaging suppression method, device, medium, program product, and terminal of the present invention have the following beneficial effects: First, it can save a lot of time and there is no need to redesign the placement rules of SRAF. This feature makes the entire process more efficient and reduces the workload required in the optimization and simulation stages. Second, the method maintains the original spatial position of SRAF, fully utilizes the advantages of the existing design, and avoids potential impacts caused by position changes. In addition, by effectively minimizing the hollowed-out SRAF area, it ensures the maximization of the resolution enhancement effect of SRAF on the main pattern. This optimization not only improves the clarity and accuracy of the pattern, but also helps to improve production efficiency and reduce the complexity in the manufacturing process. Description of the Drawings

[0017] Figure 1 Shows a schematic flow chart of an embodiment of the automatic SRAF exposure imaging suppression method of the present invention.

[0018] Figure 2 Shows a schematic flow chart of the optimization of the first layout area in an embodiment of the automatic SRAF exposure imaging suppression method of the present invention.

[0019] Figure 3 Shows a schematic flow chart of the optimization of the second layout area in an embodiment of the automatic SRAF exposure imaging suppression method of the present invention.

[0020] Figure 4 Shows a schematic flow chart of another embodiment of the present invention.

[0021] Figure 5 Shows a schematic flow chart of another embodiment of the automatic SRAF exposure imaging suppression method of the present invention.

[0022] Figure 6 Shows the mask layout before optimization in an embodiment of the automatic SRAF exposure imaging suppression method of the present invention.

[0023] Figure 7 Shows the exposure pattern before optimization in an embodiment of the automatic SRAF exposure imaging suppression method of the present invention.

[0024] Figure 8 Shows the mask layout after optimization in an embodiment of the automatic SRAF exposure imaging suppression method of the present invention.

[0025] Figure 9 Shows the exposure pattern after optimization in an embodiment of the automatic SRAF exposure imaging suppression method of the present invention.

[0026] Figure 10 Shows a schematic structural diagram of an embodiment of the automatic SRAF exposure imaging suppression device of the present invention.

[0027] Figure 11 Shows a schematic structural diagram of an embodiment of the automatic SRAF exposure imaging suppression terminal of the present invention. Specific embodiments

[0028] The following uses specific specific examples to illustrate the implementation manners of the present invention. Those skilled in the art can easily understand the other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific implementation manners. Various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of the present invention. It should be noted that, without conflict, the following embodiments and the features in the embodiments can be combined with each other.

[0029] Before further elaborating on the present invention, the nouns and terms involved in the embodiments of the present invention are described. The nouns and terms involved in the embodiments of the present invention are applicable to the following explanations:

[0030] <1> SRAF: SRAF refers to auxiliary patterns used to enhance the resolution of main patterns during the lithography process. They are typically designed to add additional features around the main patterns to improve imaging quality, reduce resolution loss caused by diffraction effects during the lithography process, and thus enhance the clarity and accuracy of the final patterns.

[0031] <2> Main pattern: The main pattern refers to the main features or structures that need to be formed on the substrate during the lithography process. These features are usually the core parts of integrated circuits or other micro-nano structures, and their shape, size, and position directly determine the function and performance of the device.

[0032] <3> Interference pattern: The interference pattern refers to additional patterns or features that may affect the imaging quality of the main pattern during the lithography process. These interference patterns may be caused by design defects, optical artifacts, or limitations of the lithography equipment. They will have a negative impact on the clarity and accuracy of the main pattern and need to be eliminated or reduced through optimization or adjustment.

[0033] For ease of understanding the embodiments of the present invention, first in combination with Figure 1 Detailed description. Figure 1 FIG. shows a schematic flowchart of an automatic SRAF exposure and development suppression method in an embodiment of the present invention. The automatic SRAF exposure and development suppression method in this embodiment mainly includes the following steps:

[0034] Step S11: Execute an exposure simulation algorithm for a mask configured with SRAF to generate an initial exposure pattern.

[0035] In an embodiment of the present invention, SRAF is composed of one or more small feature patterns and is placed near the edge or contour of the main pattern to improve the resolution of the mask pattern. After placing the SRAF, the main pattern will theoretically have a smoother edge after lithography and avoid pattern distortion caused by diffraction effects.

[0036] In an embodiment of the present invention, the exposure simulation algorithm is based on the principles of light propagation and coherence. Through computer simulation, an optical simulation software (such as a laser lithography simulator) is used to simulate the propagation, interference, and diffraction of light waves during the exposure process, thereby truly simulating the process of light propagation on the mask and the wafer. The simulation calculation results obtained through the exposure simulation operation simulate the exposure intensity map of each point.

[0037] Step S12: Detect interference patterns in the initial exposure pattern through a matching algorithm. If an interference pattern is detected, perform multiple rounds of iterative optimization operations on the SRAF placement area.

[0038] In an embodiment of the present invention, the process of detecting interference patterns in the initial exposure pattern through a matching algorithm includes: First, extract the image feature descriptors in the initial exposure pattern, and then compare the extracted feature descriptors with a predefined interference pattern feature template. By calculating the similarity or matching degree between the feature descriptor and the template, determine whether there is an interference pattern according to a preset similarity threshold. When the matching similarity exceeds the preset threshold, it is determined that an interference pattern is detected, and the subsequent iterative optimization operation of the SRAF placement area is triggered. The matching algorithm includes, but is not limited to: template matching algorithm, feature point matching algorithm, machine learning classification algorithm.

[0039] It should be noted that the reason for the generation of interference patterns when placing SRAFs is that when light passes through the mask, the optical features near the SRAF will cause interference of light waves, forming a diffraction pattern, thereby introducing additional interference patterns in the exposure pattern. The interference patterns are distributed around the SRAF or overlap with the SRAF placement area, and according to the received light intensity distribution, local brightness changes are generated, thereby forming interference patterns containing additional patterns or boundaries on the finally generated exposure pattern. The shape of the interference pattern usually depends on the position, size of the SRAF and its relative layout with the main pattern. The interference patterns include texture-like, offset shapes, and blurred boundaries, which cause edge distortion, pattern overlap, or increased defects of the main pattern.

[0040] In an embodiment of the present invention, the process of performing multiple rounds of iterative optimization operations on the SRAF placement area includes: determining whether the interference pattern overlaps with the SRAF placement area; if the coordinates of the interference pattern overlap with the SRAF placement area, extract the first area to be optimized from the SRAF placement area; otherwise, extract the second area to be optimized from the SRAF placement area; perform multiple rounds of iterative optimization operations on the first area to be optimized / second area to be optimized.

[0041] It is worth noting that the advantage of the present invention in determining whether the interference pattern overlaps with the SRAF placement area and then performing targeted iterative optimization operations on the overlapping area and non-overlapping area is that: by finely adjusting the overlapping area, the influence of interference on lithographic imaging is effectively eliminated, ensuring high-quality imaging; while for the non-overlapping area, by adding a projection step, the interference influence is quickly evaluated and a simplified optimization strategy is adopted. This differentiated processing not only greatly improves the response efficiency to the interference situation of SRAFs, but also optimizes resource allocation, improving the overall design efficiency and product quality.

[0042] In an embodiment of the present invention, the process of extracting the first area to be optimized from the SRAF placement area includes: obtaining the overlapping area between the interference pattern coordinates and the SRAF placement area; extracting the minimum circumscribed rectangle containing the overlapping area to generate the first area to be optimized.

[0043] In this embodiment, the process of extracting the minimum circumscribed rectangle containing the overlapping area includes: First, determine the lower left corner coordinates ( ) and the upper right corner coordinates ( ) of the SRAF exposure pattern. Specifically, set the lower left corner of the entire layout as the coordinate point (0, 0). Through these two coordinates, a corresponding rectangular area is generated, which can completely cover the SRAF exposure pattern. The side lengths of this rectangular area are ( ) and ( ). Figure 2 Shows the process of iteratively optimizing the first area to be optimized in this embodiment. Based on the overlapping area, a minimum circumscribed matrix that can contain the overlapping area is generated, and the minimum circumscribed matrix is hollowed out from the SRAF area. With multiple iterative optimizations, the hollowed-out area is gradually reduced to generate the final optimal SRAF area.

[0044] In an embodiment of the present invention, the process of extracting the second area to be optimized from the SRAF placement area includes: extracting the SRAF placement area closest to the interference pattern; vertically projecting the interference pattern onto the SRAF placement area closest to it to generate a projection length; extracting the longest width of the SRAF placement area closest to it in the projection direction; based on the projection length and the longest width, generating a second area to be optimized in the SRAF placement area closest to it.

[0045] In this embodiment, the process of extracting the SRAF placement area closest to the interference pattern includes the following steps: Using the Euclidean distance formula, calculate the distance between the interference pattern and each SRAF area through formula 1. Where ( ) is the center point coordinates of the interference pattern, and ( ) are the center point coordinates of each SRAF area. Record all the calculated distance values, compare these distances, and extract the SRAF area with the smallest distance, which is the SRAF placement area closest to it.

[0046] (Formula 1)

[0047] In this embodiment, the process of vertically projecting the interference pattern onto the SRAF placement area closest to it to generate a projection length includes: for each point on the interference pattern ( ), extend it vertically to the junction with the nearest SRAF region to generate a projection point ( ). The projection length is the length formed by the interference pattern on the nearest SRAF region. This length is determined by measuring the lateral width of the projection shape on the SRAF region. Figure 3 Shows the process of iterative optimization of the second region to be optimized in this embodiment. For non-overlapping additional exposure regions, project to the SRAF placement region in the area outside the SRAF, and continue to break the SRAF placement region based on the projection result to generate Figure 3 The intermediate pattern in, and then gradually shrink the SRAF placement region based on the rectangular region formed by the broken pattern to generate the optimal SRAF placement region.

[0048] In an embodiment of the present invention, the shape of the first region to be optimized / second region to be optimized is rectangular. The process of performing multiple rounds of iterative optimization operations on the first region to be optimized / second region to be optimized includes: taking the center point of the first region to be optimized / second region to be optimized as a reference, shortening the long side and short side of the first region to be optimized / second region to be optimized, and translating the shortened long side and short side towards the center point direction to form a region to be removed; in the SRAF placement region, dig out the region to be removed to generate an optimized SRAF.

[0049] In this embodiment, in this iterative process, first set the side lengths of the rectangle in the x direction and y direction to be shortened respectively. By adjusting the side lengths of the rectangle, a new rectangular region is formed. Next, dig out the shrunk rectangular region from the target SRAF to obtain an updated SRAF. Then perform simulation. If no exposure pattern is found in the simulation of the new SRAF, continue with the next iteration; if an exposure pattern is found in the simulation of the new SRAF, the target rectangular region will remain the rectangular region obtained in the previous iteration. Here, "dig out" means subtracting the shrunk rectangular region from the target SRAF to eliminate the optical features in this region, thereby updating the SRAF to reflect the design requirements of the current iteration.

[0050] Exemplarily, in this iterative process, set the side length of the rectangle in the x direction to be shortened by 1 nm each time, and in the y_ direction to be shortened by 2 nm each time. Therefore, after the first iteration, the side lengths of the rectangle will become and . Next, dig out the rectangular region after the first iteration from the target SRAF to obtain the SRAF of the first iteration. Then perform simulation. If no exposure pattern is found in the simulation of the new SRAF, continue with the next iteration; if an exposure pattern is found in the simulation of the new SRAF, the target rectangular region will remain the rectangular region obtained in the previous iteration.

[0051] Step S13: After each round of iterative optimization operation, based on the mask of the SRAF after configuration optimization, re - execute the exposure simulation algorithm to generate a new exposure pattern; when the new exposure pattern meets the preset termination condition, end the iterative optimization operation.

[0052] In an embodiment of the present invention, the preset termination condition includes one or more of the following: the quality index of the new exposure pattern meets the preset standard; the multi - round iterative optimization operation reaches the maximum number of iterations; the new exposure pattern does not contain interference patterns.

[0053] In this embodiment, the new exposure pattern needs to meet specific quality indexes. For example, the set minimum resolution is 50 nanometers, and only when it reaches or exceeds this standard is it considered qualified. Secondly, the number of rounds of the iterative optimization operation shall not exceed the set maximum number. For example, the maximum number of iterations is 50 rounds to avoid excessive calculation and time waste. Finally, interference patterns must be excluded from the new exposure pattern to ensure that it is not affected by unwanted factors. For example, if the area of the interference pattern exceeds 5% of the total pattern area, the optimization is terminated.

[0054] In an embodiment of the present invention, the preset termination condition further includes one or more of the following: the similarity between the exposure pattern and the target pattern reaches a threshold value to ensure that the gap between the generated exposure pattern and the design target is within an acceptable range, thereby improving the yield and quality of the finished product; the number of iterations reaches the preset upper limit to effectively prevent excessive time consumption and ensure that the optimization process is completed within a controllable time, avoiding overfitting or unnecessary complexity; setting a specific time limit to ensure that the budget time is not exceeded in actual operation, facilitating resource and schedule management, and improving the practicality of the optimization; meeting the cost or resource consumption limit to avoid unnecessary waste; and the theoretical performance index reaches the standard, so as to directly judge whether the optimization is successful when a specific performance index is reached, thereby reducing unnecessary optimization iterations.

[0055] Figure 4 Shows a schematic flow diagram in another embodiment of the present invention, including the following steps: By creating a simulation of the SRAF pattern, clarify the generation target and its block area. Then, scale the pattern according to the height and width parameters to generate a new SRAF pattern. Subsequently, use the new pattern for real - time simulation to confirm the generation of the target SRAF. The generated results include two types: with exposure and without exposure. Finally, the SRAF will correspond to the previously selected target block area.

[0056] Figure 5The flowchart in another embodiment of the present invention is shown, including the following steps: input generation parameters and simulate to generate a lithography pattern, then determine whether the lithography pattern contains an interference pattern. If it contains, proceed to the next step; if not, terminate the process. Then verify whether there is an overlap between the SRAF and the interference region. If there is an overlap, continue; otherwise, proceed to the next step. Optimize the SRAF according to the shape and size of the selected region, and extract SRAF regions with similar shapes for the first optimization. After that, conduct a detailed screening of the first optimized region or the second optimized region to decide whether to generate an accurate lithography pattern. Finally, determine whether the generated lithography pattern meets the expected standard. If it meets, output a new SRAF pattern; if not, return to the previous step for adjustment.

[0057] Figures 6 to 9 The mask layout and exposure pattern in this embodiment are shown. Among them, Figure 6 The mask layout before optimization is shown, where 4 SRAF patterns are arranged around the main pattern. Figure 7 Presents based on Figure 6 The exposure pattern obtained by simulating and emulating the mask layout. In this exposure pattern, in addition to the exposure of the main pattern, additional exposure interference caused by the SRAF pattern also appears. Subsequently, Figure 8 The mask layout after multiple rounds of iterative optimization is shown, and a rectangular hollowed-out region generated through multiple rounds of iterative optimization is set in the middle of each SRAF prevention region. Figure 9 Then presents the Figure 8 Exposure pattern of the simulation. Figure 9 The exposure pattern in

[0058] Figure 10 only contains the main pattern, indicating that the present invention effectively eliminates the interference pattern caused by the SRAF placement.

[0058] Figure 10 is a schematic block diagram of the automatic SRAF exposure image suppression device provided by the embodiment of the present invention. As Figure 10 shown, the device includes a simulation exposure module 1001, an interference detection and optimization module 1002, and a termination condition check module 1003.

[0059] Simulation exposure module 1001: used to execute the exposure simulation algorithm for the mask configured with SRAF to generate an initial exposure pattern; after each round of iterative optimization operation, based on the optimized SRAF, perform the exposure simulation operation on the mask again to generate a new exposure pattern.

[0060] Interference detection and optimization module 1002: used to detect interference patterns in the initial exposure pattern through a matching algorithm. If an interference pattern is detected, perform multiple rounds of iterative optimization operations on the SRAF placement area.

[0061] Termination condition checking module 1003: used to end the iterative optimization operation when the new exposure pattern meets the preset termination condition.

[0062] It should be understood that the specific processes for each module to execute the above corresponding steps have been described in detail in the above method embodiments. For the sake of brevity, they will not be repeated here.

[0063] It should also be understood that the division of modules in the embodiments of the present invention is illustrative, merely a logical function division. In actual implementation, there may be other division methods. In addition, in each embodiment of the present invention, the functional modules can be integrated in one processor, can also exist separately physically, or two or more modules can be integrated in one module. The above integrated modules can be implemented in the form of hardware or in the form of software functional modules.

[0064] Figure 11 is a schematic block diagram of an electronic terminal provided by an embodiment of the present invention. As Figure 11 shown, the electronic terminal includes: at least one processor 1101, a memory 1102, at least one network interface 1103, and a user interface 1105. Each component in the device is coupled together through a bus system 1104. It can be understood that the bus system 1104 is used to realize the connection and communication between these components. In addition to including a data bus, the bus system 1104 also includes a power bus, a control bus, and a status signal bus. However, for the sake of clear illustration, in Figure 11 all kinds of buses are labeled as the bus system.

[0065] Among them, the user interface 1105 may include a display, a keyboard, a mouse, a trackball, a click gun, a key, a button, a touchpad, or a touch screen, etc.

[0066] It can be understood that the memory 1102 can be a volatile memory or a non-volatile memory, and can also include both volatile and non-volatile memories. Among them, the non-volatile memory can be a read-only memory (ROM, Read Only Memory), a programmable read-only memory (PROM, Programmable Read-Only Memory), which is used as an external cache. By way of example but not limitation, many forms of RAM are available, such as static random access memory (SRAM, Static Random Access Memory), synchronous static random access memory (SSRAM, Synchronous Static Random Access Memory). The memory described in the embodiments of the present invention is intended to include but not be limited to these and any other suitable categories of memory.

[0067] The memory 1102 in the embodiments of the present invention is used to store various types of data to support the operation of the electronic terminal 1100. Examples of such data include: any executable programs for operating on the electronic terminal 1100, such as the operating system 11021 and application programs 11022; the operating system 11021 contains various system programs, such as the framework layer, the core library layer, the driver layer, etc., for implementing various basic services and processing hardware-based tasks. The application programs 11022 may include various application programs, such as a Media Player, a Browser, etc., for implementing various application services. The method for automatically suppressing SRAF exposure imaging provided in the embodiments of the present invention may be included in the application program 11022.

[0068] The method disclosed in the above embodiments of the present invention may be applied to or implemented by the processor 1101. The processor 1101 may be an integrated circuit chip with signal processing capabilities. During implementation, the steps of the above method may be completed by the integrated logic circuit in the hardware of the processor 1101 or instructions in software form. The above-mentioned processor 1101 may be a general-purpose processor, a digital signal processor (DSP), or other programmable logic devices, discrete gate or transistor logic devices, discrete hardware components, etc. The processor 1101 may implement or execute the various methods, steps, and logic block diagrams disclosed in the embodiments of the present invention. The general-purpose processor 1101 may be a microprocessor or any conventional processor, etc. Combining the steps of the accessory optimization method provided in the embodiments of the present invention may be directly embodied as being completed by a hardware decoding processor, or by a combination of hardware and software modules in the decoding processor. The software module may be located in a storage medium, and this storage medium is located in the memory. The processor reads the information in the memory and combines its hardware to complete the steps of the foregoing method.

[0069] In an exemplary embodiment, the electronic terminal 1100 may be one or more application-specific integrated circuits (ASICs), DSPs, programmable logic devices (PLDs), complex programmable logic devices (CPLDs) for executing the foregoing method.

[0070] According to the method provided by an embodiment of the present invention, the present invention also provides a computer program product, which includes: computer program code. When the computer program code runs on a computer, it causes the computer to execute the automatic SRAF exposure imaging suppression method in any one of the above - shown embodiments.

[0071] According to the method provided by an embodiment of the present invention, the present invention also provides a computer - readable storage medium, which stores program code. When the program code runs on a computer, it causes the computer to execute the automatic SRAF exposure imaging suppression method in any one of the above - shown embodiments.

[0072] The terms "component", "module", "system", etc. used in this specification are used to represent computer - related entities, hardware, firmware, combinations of hardware and software, software, or software in execution. For example, a component can be, but is not limited to, a process running on a processor, a processor, an object, an executable file, an execution thread, a program, and / or a computer. By way of illustration, an application running on a computing device and the computing device can both be components. One or more components can reside in a process and / or an execution thread, and a component can be located on one computer and / or distributed between two or more computers. In addition, these components can execute from various computer - readable media storing various data structures. A component can communicate, for example, through local and / or remote processes according to a signal having one or more data packets (such as data from two components interacting with each other between a local system, a distributed system, and / or a network, such as data interacting with other systems through a signal on the Internet).

[0073] Those of ordinary skill in the art can realize that the various illustrative logical blocks (Illustrative Logical Block) and steps (Step) described in combination with the embodiments disclosed herein can be implemented by electronic hardware, or a combination of computer software and electronic hardware. Whether these functions are executed in a hardware or software manner depends on the specific application and design constraints of the technical solution. Professional technicians can use different methods to implement the described functions for each specific application, but such implementation should not be considered to exceed the scope of the present invention.

[0074] Those skilled in the art can clearly understand that, for the convenience and conciseness of description, the specific working processes of the above - described systems, devices, and units can refer to the corresponding processes in the foregoing method embodiments, and will not be elaborated herein.

[0075] In several embodiments provided by the present invention, it should be understood that the disclosed systems, devices, and methods can be implemented in other ways. For example, the device embodiments described above are merely illustrative. For example, the division of units is only a logical function division. In actual implementation, there may be other division methods. For example, multiple units or components can be combined or integrated into another system, or some features can be ignored or not executed. Another point is that the displayed or discussed couplings or direct couplings or communication connections between each other can be through some interfaces. The indirect couplings or communication connections of devices or units can be in electrical, mechanical, or other forms.

[0076] The units described as separate components may or may not be physically separated. The components displayed as units may or may not be physical units, that is, they can be located in one place or distributed to multiple network units. Some or all of the units can be selected according to actual needs to achieve the purpose of the solution of this embodiment.

[0077] In addition, in each embodiment of the present invention, the functional units can be integrated in a processing unit, or each unit can exist physically alone, or two or more units can be integrated in one unit.

[0078] In the above embodiments, the functions of the functional units can be implemented in whole or in part by software, hardware, firmware, or any combination thereof. When implemented using software, it can be implemented in whole or in part in the form of a computer program product. The computer program product includes one or more computer instructions (programs). When the computer program instructions (programs) are loaded and executed on a computer, the processes or functions according to the embodiments of the present invention are generated in whole or in part. The computer can be a general-purpose computer, a special-purpose computer, a computer network, or other programmable devices. The computer instructions can be stored in a computer-readable storage medium or transmitted from one computer-readable storage medium to another. For example, the computer instructions can be transmitted from a website, computer, server, or data center to another website, computer, server, or data center in a wired manner (such as coaxial cable, optical fiber, Digital Subscriber Line (DSL)) or wirelessly (such as infrared, wireless, microwave, etc.). The computer-readable storage medium can be any available medium that the computer can access or a data storage device such as a server or data center that includes one or more integrated available media. The available medium can be a magnetic medium (for example, a floppy disk, a hard disk, a magnetic tape), an optical medium (for example, a high-density digital video disc (Digital Video Disc, DVD)), or a semiconductor medium (for example, a solid-state disk (Solid State Disk, SSD), etc.).

[0079] When a function is implemented in the form of a software functional unit and sold or used as an independent product, it can be stored in a computer-readable storage medium. Based on this understanding, the technical solution of the present invention, in essence, or the part that contributes to the prior art, or a part of this technical solution, can be embodied in the form of a software product. This computer software product is stored in a storage medium and includes several instructions for causing a computer device (which may be a personal computer, a server, or a network device, etc.) to execute all or part of the steps of the methods in various embodiments of the present invention. The aforementioned storage medium includes: various media such as USB flash drives, external hard drives, read-only memory (ROM), random access memory (RAM), magnetic disks, or optical discs that can store program codes.

[0080] As described above, the above is only the specific implementation manner of the present invention, but the protection scope of the present invention is not limited thereto. Any person skilled in the art within the technical scope disclosed by the present invention can easily think of changes or substitutions, which should all be covered by the protection scope of the present invention. Therefore, the protection scope of the present invention should be subject to the protection scope of the claims.

[0081] In summary, the present invention provides an automatic SRAF exposure imaging suppression method, device, medium, program product, and terminal. Through multi-round iterative optimization of sub-regions, efficient optimization of the SRAF placement area is achieved, and the problems of time waste and process complexity caused by the need to re-design the SRAF placement rules in the traditional method are solved. Specifically, if an interfering pattern is detected in the initial exposure pattern, the SRAF placement area is optimized. And after each round of iterative optimization operation, based on the optimized SRAF, the exposure simulation operation is performed on the mask plate again to generate a new exposure pattern. When the new exposure pattern meets the preset termination condition, the iterative optimization operation ends. The present invention not only maintains the original spatial position of the SRAF, maximally guarantees the enhancement effect of the main pattern resolution, but also improves the clarity and accuracy of the pattern, thereby improving production efficiency, simplifying the manufacturing process, and providing a more convenient solution for practical applications. Therefore, the present invention effectively overcomes various disadvantages in the prior art and has high industrial utilization value.

[0082] The above embodiments are only illustrative of the principles and effects of the present invention and are not used to limit the present invention. Any person familiar with this technology can modify or change the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or changes completed by those with ordinary knowledge in the technical field without departing from the spirit and technical idea disclosed by the present invention should still be covered by the claims of the present invention.

Claims

1. A method for suppressing automatic SRAF exposure and development, characterized in that: include: executing an exposure simulation algorithm for a mask configured with the SRAF to generate an initial exposure pattern; detecting interference patterns in the initial exposure pattern by a matching algorithm, and performing multiple rounds of iterative optimization operations on the SRAF placement area if interference patterns are detected; The process of performing multiple rounds of iterative optimization operations on the SRAF placement area includes: determining whether the interference pattern overlaps with the SRAF placement area; if the interference pattern coordinates overlap with the SRAF placement area, extracting a first area to be optimized from the SRAF placement area; otherwise, extracting a second area to be optimized from the SRAF placement area; performing multiple rounds of iterative optimization operations on the first area to be optimized / the second area to be optimized; the process of extracting the first area to be optimized from the SRAF placement area includes: obtaining the overlapping area between the interference pattern coordinates and the SRAF placement area; extracting the minimum circumscribed rectangle containing the overlapping area to generate the first area to be optimized; the process of extracting the second area to be optimized from the SRAF placement area includes: extracting the SRAF placement area that is closest to the interference pattern ; Project the interference pattern vertically to the nearest SRAF placement area to generate a projection length; extract the longest width of the nearest SRAF placement area in the projection direction; generate a second area to be optimized in the nearest SRAF placement area based on the projection length and the longest width; the shape of the first area to be optimized / the second area to be optimized is a rectangle, and the process of performing multiple rounds of iterative optimization operations on the first area to be optimized / the second area to be optimized includes: shortening the long side and the short side of the first area to be optimized / the second area to be optimized based on the center point of the first area to be optimized / the second area to be optimized, and translating the shortened long and short sides toward the center point to form an area to be removed; in the SRAF placement area, excavate the area to be removed to generate an optimized SRAF; After each round of iterative optimization operation, the exposure simulation algorithm is re-executed based on the mask of the SRAF after configuration optimization to generate a new exposure pattern; when the new exposure pattern meets the preset termination condition, the iterative optimization operation ends.

2. The automatic SRAF exposure development suppression method according to claim 1, characterized in that: The preset termination conditions include one or more of the following: The quality index of the new exposure pattern meets the preset standard; The multi-round iterative optimization operation reaches the maximum number of iterations; The new exposure pattern does not contain interference patterns.

3. An automatic SRAF exposure and development suppression device, characterized in that: include: Simulation exposure module: used to execute the exposure simulation algorithm for the mask configured with SRAF to generate an initial exposure pattern; After each round of iterative optimization operation, based on the optimized SRAF, performing exposure simulation operation on the mask again to generate a new exposure pattern; Interference detection and optimization module: used to detect interference patterns in the initial exposure pattern through a matching algorithm, and if an interference pattern is detected, perform multiple rounds of iterative optimization operations on the SRAF placement area; The process of performing multiple rounds of iterative optimization operations on the SRAF placement area includes: determining whether the interference pattern overlaps with the SRAF placement area; if the interference pattern coordinates overlap with the SRAF placement area, extracting a first area to be optimized from the SRAF placement area; otherwise, extracting a second area to be optimized from the SRAF placement area; performing multiple rounds of iterative optimization operations on the first area to be optimized / the second area to be optimized; the process of extracting the first area to be optimized from the SRAF placement area includes: obtaining the overlapping area between the interference pattern coordinates and the SRAF placement area; extracting the minimum circumscribed rectangle containing the overlapping area to generate the first area to be optimized; the process of extracting the second area to be optimized from the SRAF placement area includes: extracting the SRAF placement area that is closest to the interference pattern ; Project the interference pattern vertically to the nearest SRAF placement area to generate a projection length; extract the longest width of the nearest SRAF placement area in the projection direction; generate a second area to be optimized in the nearest SRAF placement area based on the projection length and the longest width; the shape of the first area to be optimized / the second area to be optimized is a rectangle, and the process of performing multiple rounds of iterative optimization operations on the first area to be optimized / the second area to be optimized includes: shortening the long side and the short side of the first area to be optimized / the second area to be optimized based on the center point of the first area to be optimized / the second area to be optimized, and translating the shortened long and short sides toward the center point to form an area to be removed; in the SRAF placement area, excavate the area to be removed to generate an optimized SRAF; Termination condition checking module: used to end the iterative optimization operation when the new exposure pattern meets the preset termination condition.

4. A computer-readable storage medium having a computer program stored thereon, characterized in that: When the computer program is executed by a processor, the automatic SRAF exposure development suppression method according to any one of claims 1 to 2 is implemented.

5. A computer program product, characterized in that The computer program product includes computer program codes, and when the computer program codes are executed on a computer, the computer is enabled to implement the automatic SRAF exposure development suppression method according to any one of claims 1 to 2.

6. An electronic terminal comprising a memory, a processor and a computer program stored in the memory, characterized in that: The processor executes the computer program to implement the automatic SRAF exposure development suppression method according to any one of claims 1 to 2.

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