Temperature Variable Attenuator and Electronic Device

Abstract

The present application provides a temperature-variable attenuator and an electronic device. The temperature-variable attenuator mainly consists of two resistors. Compared with devices composed of three or more resistors, it has a wider operating frequency range and a smaller volume, which is more conducive to the miniaturization of the product. In addition, the first resistor can be accurately measured and adjusted through two signal electrodes, and the second resistor can be accurately measured and adjusted through the signal electrode and the ground electrode. Thus, the accuracy of the temperature-variable attenuator can be improved.

Description

Technical Field

[0001] This application belongs to the field of temperature compensation, and particularly relates to a temperature variable attenuator and an electronic device. Background Art

[0002] Currently, during the operation of active devices such as high-frequency and microwave devices, with the increase in operating time or the change in ambient temperature, the problem of temperature drift often occurs, seriously affecting the characteristic indexes of the devices and even the stability of the entire system.

[0003] In order to reduce the drift of the temperature characteristics of high-frequency and microwave active devices. In some solutions, for example, high-frequency and microwave power amplifiers are used, but their gain changes with the ambient temperature, and the output power also changes accordingly, seriously affecting the characteristic indexes and stability of the devices and even the entire system. In some solutions, an integrated temperature compensation attenuator is also used, which can overcome these problems to a certain extent. However, the existing temperature compensation attenuators generally use three microstrip line resistors to form the so-called T-type or π-type structure. These three microstrip line resistors form a loop structure, making it difficult to accurately measure and debug the resistance value of a single resistor, resulting in insufficient accuracy of the attenuation amount. In addition, the structure using three microstrip line resistors has a large size and is not conducive to the miniaturization of products. Summary of the Invention

[0004] The purpose of this application is to provide a temperature variable attenuator and an electronic device, aiming to solve the problems of insufficient accuracy and large size of traditional temperature compensation attenuators.

[0005] To achieve the above purpose, in a first aspect, an embodiment of this application provides a temperature variable attenuator, including a substrate, a resistor assembly, two signal electrodes, and a ground electrode; the resistor assembly only includes a first resistor and a second resistor;

[0006] The first resistor, the second resistor, the two signal electrodes, and the ground electrode are fixed on the first surface of the substrate. The first resistor is connected between the two signal electrodes, the second resistor is connected between one of the signal electrodes and the ground electrode, the second resistor is not directly connected to the other signal electrode, and there is no other resistor between any signal electrode and the ground electrode except the first resistor and the second resistor. At least one of the first resistor and the second resistor is a thermistor.

[0007] In another possible implementation manner of the first aspect, the ground electrode includes:

[0008] A first part, which is disposed on the first surface of the substrate and is connected to the second resistor.

[0009] In another possible implementation of the first aspect, the ground electrode further includes:

[0010] A second part, which is formed by extending from the first part on a first side of the substrate adjacent to the first part;

[0011] A third part, which is formed by extending from the second part on a second surface of the substrate opposite to the first surface.

[0012] In another possible implementation of the first aspect,

[0013] The first resistor is a thermistor, and the second resistor is a thermistor; or

[0014] The first resistor is a thermistor, and the second resistor is a fixed resistor; or

[0015] The first resistor is a fixed resistor, and the second resistor is a thermistor.

[0016] In another possible implementation of the first aspect, one of the first resistor and the second resistor is a positive temperature coefficient thermistor, and the other is a negative temperature coefficient thermistor.

[0017] In another possible implementation of the first aspect, a protective layer is further included, and the protective layer covers the first resistor and the second resistor.

[0018] In another possible implementation of the first aspect, the substrate includes a ceramic substrate.

[0019] In another possible implementation of the first aspect, the geometric shape of the first resistor is a polygon or a polyhedron.

[0020] In another possible implementation of the first aspect, the signal electrode is an electrode made of gold or silver palladium, the ground electrode is an electrode made of gold and / or silver palladium, and the first resistor and the second resistor are film resistors.

[0021] In a second aspect, an embodiment of the present application provides an electronic device including the temperature variable attenuator described above.

[0022] The beneficial effects of the embodiments of the present application compared with the prior art are as follows: The above temperature variable attenuator is mainly composed of two resistors. Compared with devices composed of three or more resistors, it has a wider operating frequency range, a smaller volume, and is more conducive to the miniaturization of products; in addition, the first resistor can be accurately measured and debugged through two signal electrodes, and the second resistor can be accurately measured and debugged through the signal electrode and the ground electrode. In this way, the accuracy of the temperature variable attenuator can be improved. Description of the Drawings

[0023] To more clearly illustrate the technical solutions in the embodiments of the present application, the following will briefly introduce the accompanying drawings required for the description of the embodiments or the prior art. Obviously, the accompanying drawings in the following description are only some embodiments of the present application. For those of ordinary skill in the art, without creative efforts, other accompanying drawings can be obtained based on these drawings.

[0024] Figure 1 Structural schematic diagram of a temperature variable attenuator provided by an embodiment of the present application;

[0025] Figure 2 For an embodiment of the present application Figure 1 A - A sectional view;

[0026] Figure 3 For an embodiment of the present application Figure 1 A - A sectional view;

[0027] Figure 4 For an embodiment of the present application Figure 1 A - A sectional view;

[0028] Figure 5 Structural schematic diagram of a temperature variable attenuator provided by an embodiment of the present application;

[0029] Figure 6 Equivalent circuit schematic diagram of a temperature variable attenuator provided by an embodiment of the present application;

[0030] Figure 7 Equivalent circuit schematic diagram of a temperature variable attenuator provided by an embodiment of the present application;

[0031] Figure 8 Equivalent circuit schematic diagram of a temperature variable attenuator provided by an embodiment of the present application;

[0032] Figure 9 Equivalent circuit schematic diagram of a temperature variable attenuator provided by an embodiment of the present application;

[0033] Figure 10 Equivalent circuit schematic diagram of a temperature variable attenuator provided by an embodiment of the present application;

[0034] Figure 11 Equivalent circuit schematic diagram of a temperature variable attenuator provided by an embodiment of the present application;

[0035] Figure 12 Equivalent circuit schematic diagram of a temperature variable attenuator provided by an embodiment of the present application;

[0036] Figure 13Schematic diagram of the equivalent circuit of a temperature-variable attenuator provided by an embodiment of the present application;

[0037] Figure 14 Schematic diagram of the equivalent circuit of a temperature-variable attenuator provided by an embodiment of the present application;

[0038] Figure 15 Schematic diagram of the equivalent circuit of a temperature-variable attenuator provided by an embodiment of the present application;

[0039] Figure 16 Schematic diagram of the equivalent circuit of a temperature-variable attenuator provided by an embodiment of the present application;

[0040] Figure 17 Schematic diagram of the equivalent circuit of a temperature-variable attenuator provided by an embodiment of the present application;

[0041] Figure 18 Relationship curve of the attenuation amount and temperature change of the temperature-variable attenuator provided by any embodiment of the present application at different operating frequencies. Detailed implementation manners

[0042] In order to make the technical problems, technical solutions and beneficial effects to be solved by the present application clearer, the present application will be further described in detail below with reference to the drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present application and are not used to limit the present application.

[0043] In addition, the terms "first" and "second" are only used for descriptive purposes and cannot be understood as indicating or implying relative importance or implicitly indicating the quantity of the indicated technical features. Thus, the features defined with "first" and "second" may explicitly or implicitly include one or more of such features. In the description of the present application, "a plurality of" means two or more unless otherwise specifically defined.

[0044] In high-frequency microwave circuits and systems, especially in fields such as mobile communication systems, navigation systems, and radar systems with strict requirements for temperature characteristics, temperature-compensated attenuators are often used to compensate for temperature drift caused by temperature changes. However, traditional temperature-compensated attenuators generally use multiple electronic devices (such as resistors) to form a hardware circuit such as a T-shaped structure or a π-shaped structure to compensate the temperature of the entire system. However, this solution uses more electronic devices, has a large volume and high cost. Secondly, the resistance measurement and debugging of individual electronic devices cannot be performed, so it is difficult to achieve high-precision adjustment or calibration of the attenuation amount. In addition, the operating frequency range of traditional temperature-compensated attenuators is 18 GHz (gigahertz) to 36 GHz, which cannot meet the current requirements.

[0045] To this end, the present application provides a temperature variable attenuator, which, in addition to the necessary electrodes, substrate and encapsulation structure, only includes two resistor elements as a circuit device. It is small in size and can achieve high-precision adjustment or calibration of attenuation, and can operate in an operating frequency range of 1GHz to 40GHz.

[0046] The temperature variable attenuator provided in the present application is described below by way of example in conjunction with the accompanying drawings.

[0047] Figure 1 This is a schematic diagram of the first structure of the temperature variable attenuator provided in the embodiment of the present application. Figure 1 As shown, exemplarily, a temperature variable attenuator includes a substrate 11, a resistor assembly, two signal electrodes 12, 13 and a ground electrode 14. The resistor assembly only includes a first resistor R12 and a second resistor R23.

[0048] The first resistor R12, the second resistor R23, the two signal electrodes 12, 13 and the ground electrode 14 are fixed on the first surface of the substrate 11, the first resistor R12 is connected between the two signal electrodes 12, 13, the second resistor R23 is connected between one of the signal electrodes (for example, the signal electrode 12) and the ground electrode 14, the second resistor R23 is not directly connected to the other signal electrode (for example, the signal electrode 13), there are no other resistors except the first resistor R12 and the second resistor R23 between any signal electrode 12, 13 and the ground electrode 14, and at least one of the first resistor R12 and the second resistor R23 is a thermistor.

[0049] The substrate 11 is made of insulating material, such as a ceramic substrate. It is understandable that the substrate 11 also includes a second surface opposite to the first surface. For the corresponding product, the first surface of the substrate 11 is its top surface, and the second surface is its bottom surface, or vice versa.

[0050] The two signal electrodes 12 and 13 include a first signal electrode 12 and a second signal electrode 13. When the first signal electrode 12 is used as a signal input terminal, the second signal electrode 13 is used as a signal output terminal; when the first signal electrode 12 is used as a signal output terminal, the second signal electrode 13 is used as a signal input terminal. For ease of understanding, the first resistor R12 can also be called a series resistor, and the second resistor R23 can be called a parallel resistor.

[0051] Specifically, the two ends of the first resistor R12 are directly connected to the first signal electrode 12 and the second signal electrode 13 respectively. The first end of the second resistor R23 is directly connected to the first signal electrode 12 and the first resistor R12, and the second end of the second resistor R23 is directly connected to the ground electrode 14. Equivalently, the first resistor R12 and the second resistor R23 are arranged between the second signal electrode 13 and the ground electrode 14, and the second resistor R23 is not directly connected to the second signal electrode 13; or, the two ends of the first resistor R12 are directly connected to the first signal electrode 12 and the second signal electrode 13 respectively. The first end of the second resistor R23 is directly connected to the second signal electrode 13 and the first resistor R12, and the second end of the second resistor R23 is directly connected to the ground electrode 14. This also means that the first resistor R12 and the second resistor R23 are arranged between the first signal electrode 12 and the ground electrode 14, and the second resistor R23 is not directly connected to the first signal electrode 12. That is, there is no other resistor between any of the signal electrodes 12, 13 and the ground electrode 14 except for the first resistor R12 and the second resistor R23.

[0052] In the embodiment of the present application, the above temperature variable attenuator is mainly composed of the first resistor R12 and the second resistor R23. Compared with a device composed of more than three resistors, it has a smaller volume and is more conducive to the miniaturization of the product; in addition, the resistance value of the first resistor R12 can be accurately measured and adjusted through the first signal electrode 12 and the second signal electrode 13, and the resistance value of the second resistor R23 can be accurately measured and adjusted through the first signal electrode 12 or the second signal electrode 13 and the ground electrode 14. Compared with the T-shaped or π-shaped structure composed of three resistors, the overall parameters of the temperature variable attenuator can be accurately configured, and the accuracy of the temperature variable attenuator can be improved.

[0053] In some embodiments, the temperature variable attenuator is a film device. At least one of the first resistor R12 and the second resistor R23 is a negative temperature coefficient film thermistor (NTC) or a positive temperature coefficient film thermistor (PTC). This is conducive to the miniaturization of the temperature variable attenuator and improves the integration degree. Usually, the first resistor R12 and the second resistor R23 are each a separate resistor element, and neither the first resistor R12 nor the second resistor R23 has a third terminal other than the first end and the second end.

[0054] In some embodiments, the first signal electrode 12 and the second signal electrode 13 are electrodes made of gold or silver palladium, and the ground electrode 14 is an electrode made of gold and / or silver palladium. The advantage of such electrodes is that it is conducive to improving the microwave characteristics, solderability of the device, reducing the impedance of the device, and improving the performance of the temperature variable attenuator.

[0055] Please refer to Figure 2, in some embodiments, the ground electrode 14 includes a first portion 141 disposed on a first part of the first surface of the substrate 11. Thus, when the temperature variable attenuator is disposed on the circuit board, each electrode can be soldered on the first surface.

[0056] Please refer to Figure 3 , in some embodiments, the ground electrode 14 includes a first portion 141 and a second portion 142.

[0057] The first portion 141 is disposed on the first surface of the substrate 11 and is connected to the second resistor R23. The second portion 142 is formed by extending from the first portion 141 on a first side surface of the substrate 11 adjacent to the first portion 141. That is, the ground electrode 14 also wraps around the side surface of the substrate 11, which is beneficial to improving the grounding characteristics and reliability of the temperature variable attenuator when the temperature variable attenuator is disposed on the circuit board.

[0058] Please refer to Figure 4 , in some embodiments, the ground electrode 14 further includes a third portion 143, and the third portion 143 is formed by extending from the second portion 142 on a second surface of the substrate 11. That is, the ground electrode 14 extends from the top surface to the bottom surface of the substrate, which not only facilitates soldering the temperature variable attenuator on the circuit board, but also further improves the grounding radio frequency characteristics and reliability of the temperature variable attenuator.

[0059] In some embodiments, at least a part of the first signal electrode 12, the second signal electrode 13, and the ground electrode 14 on the first surface of the substrate 11 will adopt a gold electrode, which is convenient for wire bonding with surrounding devices; the parts extending to the side surface and the second surface of the substrate 11 can be fired with a silver-palladium paste to form a silver-palladium electrode. An exemplary process is to first fire the silver-palladium paste to form a silver-palladium electrode, and then fire the gold electrode. The advantage of making the electrode in this way is low manufacturing cost, easy manufacturing, high reliability of the electrode, and improved performance of the temperature variable attenuator.

[0060] Please refer to Figure 5 , in some embodiments, the temperature variable attenuator further includes a protective layer 15, and the protective layer 15 covers the first resistor R12 and the second resistor R23, so that the first signal electrode 12, the second signal electrode 13, and the ground electrode 14 are exposed. It can be understood that the protective layer 15 may cover part of the first signal electrode 12, the second signal electrode 13, and the ground electrode 14. The protective layer 15 is used to protect the first resistor R12 and the second resistor R23. The protective layer 15 is, for example, resin.

[0061] Please refer to Figure 1 Or Figure 5 , in some embodiments, the geometric shape of the first resistor R12 is a polygon or a polygonal shape, or even a circular arc shape, a circular shape, an oval shape, etc. Exemplarily, based on the design of device miniaturization, the first resistor R12 can be made into, for exampleFigure 1 or Figure 5 The bent polygon graphics (such as snake shape) shown have better temperature change characteristics and radio frequency characteristics. The geometric shape of the second resistor R23 can be any shape, such as polygon or polygonal, or even arc-shaped, circular, elliptical, etc. Figure 1 、 Figure 5 The exemplary second resistor R23 is quadrilateral.

[0062] In some embodiments, the first resistor R12 and the second resistor R23 are film resistors. Among them, the first resistor R12 is a thick film resistor or a thin film resistor, and the second resistor R23 is a thick film resistor or a thin film resistor. The so-called film resistor refers to a resistor or thermistor made by thick film process or thin film process on the substrate 11. In some cases, when manufacturing the temperature variable attenuator of the present application, the cost of making a resistor or thermistor by thin film process is higher than that of making a resistor or thermistor by thick film process.

[0063] Please refer to Figures 6 to 9 , in some embodiments, the first resistor R12 is a thermistor and the second resistor R23 is a thermistor. Among them, one of the first resistor R12 and the second resistor R23 is a positive temperature coefficient thermistor, and the other is a negative temperature coefficient thermistor.

[0064] Exemplarily, please refer to Figure 6 、 Figure 7 , the first resistor R12 is a negative temperature coefficient thermistor, the second resistor R23 is a positive temperature coefficient thermistor, and the second resistor R23 is connected between the second signal electrode 13 and the ground electrode 14 (see Figure 6 ), or the second resistor R23 is connected between the first signal electrode 12 and the ground electrode 14 (see Figure 7 ).

[0065] Exemplarily, please refer to Figure 8 、 Figure 9 , the first resistor R12 is a positive temperature coefficient thermistor, the second resistor R23 is a negative temperature coefficient thermistor, and the second resistor R23 is connected between the second signal electrode 13 and the ground electrode 14 (see Figure 8 ), or the second resistor R23 is connected between the first signal electrode 12 and the ground electrode 14 (see Figure 9 ).

[0066] Please refer to Figures 10 to 13 , in some embodiments, the first resistor R12 is a thermistor and the second resistor R23 is a fixed resistor.

[0067] Exemplarily, please refer to Figure 10 、 Figure 11, the first resistor R12 is a positive temperature coefficient thermistor, and the second resistor R23 is connected between the second signal electrode 13 and the ground electrode 14 (see Figure 10 ), or the second resistor R23 is connected between the first signal electrode 12 and the ground electrode 14 (see Figure 11 ).

[0068] Exemplarily, please refer to Figure 12 、 Figure 13 , the first resistor R12 is a negative temperature coefficient thermistor, and the second resistor R23 is connected between the second signal electrode 13 and the ground electrode 14 (see Figure 12 ), or the second resistor R23 is connected between the first signal electrode 12 and the ground electrode 14 (see Figure 13 ).

[0069] Please refer to Figures 14 to 17 , in some embodiments, the first resistor R12 is a fixed resistor and the second resistor R23 is a thermistor.

[0070] Exemplarily, please refer to Figure 14 、 Figure 15 , the second resistor R23 is a positive temperature coefficient thermistor, and the second resistor R23 is connected between the second signal electrode 13 and the ground electrode 14 (see Figure 14 ), or the second resistor R23 is connected between the first signal electrode 12 and the ground electrode 14 (see Figure 15 ).

[0071] Exemplarily, please refer to Figure 16 、 Figure 17 , the second resistor R23 is a negative temperature coefficient thermistor, and the second resistor R23 is connected between the second signal electrode 13 and the ground electrode 14 (see Figure 14 ), or the second resistor R23 is connected between the first signal electrode 12 and the ground electrode 14 (see Figure 15 ).

[0072] Setting one of the resistors as a fixed resistor has the advantages compared to both resistors being thermistors that it is simpler to manufacture, has a lower cost, and the temperature characteristics differ slightly, but it is more cost-effective for applications where the temperature characteristics requirements are not too high.

[0073] The arrangement directions of the first signal electrode 12 and the second signal electrode 13 are the length direction, the arrangement direction of the first signal electrode 12 and the ground electrode 14 is the width direction, and the thickness is between the first surface and the second surface of the substrate 11. In some embodiments, the length of the substrate 11 or the temperature variable attenuator is 0.7 mm (millimeter) to 1 mm, and the typical value is 0.85 mm; the width of the substrate 11 or the temperature variable attenuator is 0.7 mm to 0.9 mm, and the typical value is 0.8 mm; the thickness of the substrate 11 or the temperature variable attenuator is 0.15 mm to 0.35 mm, and the typical value is 0.25 mm. It can be seen that compared with the traditional temperature variable attenuator, the size of the temperature variable attenuator provided by the embodiment of the present application is greatly reduced, which is beneficial to miniaturization and the matching of radio frequency lines.

[0074] Please refer to Figure 18 , from the relationship curve of the attenuation amount and temperature change of the temperature variable attenuator provided by any embodiment of the present application at different operating frequencies, it can be seen that the temperature variable attenuator is between -55°C and +125°C, and the operating frequency range is from 1 GHz to 40 GHz. Compared with the operating frequencies of 18 GHz to 36 GHz or 1 GHz - 20 GHz, the operating frequency range is greatly increased, and the linearity of the temperature compensation attenuation characteristics in the entire operating frequency range is good, and the product consistency is good. In some embodiments, the typical value of the operating frequency range of the temperature variable attenuator provided by any embodiment of the present application is from 1 GHz to 40 GHz.

[0075] Compared with the technical solution of the temperature compensation attenuator composed of three resistors in the prior art (such as patent CN221102377U), the technical solution of the present application has the following improvements:

[0076] 1. The product size becomes smaller: from 1.52 mm * 1.81 mm * 0.38 mm to 0.8 mm * 0.85 mm * 0.25 mm.

[0077] 2. The operating frequency range is greatly improved: In the existing temperature compensation attenuator, the operating frequency range is from 1 GHz to 20 GHz, and the operating frequency range of the technical solution of the present application is from 1 GHz to 40 GHz. Please refer to Figure 18 of the present application and Figure 6 of patent CN221102377U.

[0078] 3. The number of devices used becomes smaller: from 3 resistor devices to 2 resistor devices.

[0079] 4. For the same attenuation, the design parameters of each resistance value are different: for example, for a 3 dB attenuator, the reference values of the resistance values of the two resistor devices required by the technical solution of the present application are: R12 = 12.5 ohms, R23 = 135 ohms; while for the technical solution of the patent CN221102377U, the reference values of the resistance values of the three resistors of the π-type attenuator with 3 dB are: R1 = 17.6 ohms, R2 = R3 = 292 ohms.

[0080] Some characteristic descriptions of the temperature-variable attenuator provided by the embodiments of the present application:

[0081] Exemplarily, for example, when the operating frequency is 30 GHz and the temperature changes from -55 °C to +125 °C, the change curve of the attenuation is the yellow curve, and the attenuation changes from -4 dB to -3.2 dB. Its attenuation decreases (in absolute value) as the temperature increases.

[0082] At room temperature (25 °C), when designing a temperature-variable attenuator with an attenuation of 2 dB, the resistance value of the first resistor R12 is approximately 9 ohms to 10 ohms, and the resistance value of the second resistor R23 is approximately: 252 ohms to 268 ohms.

[0083] At room temperature (25 °C), when designing a temperature-variable attenuator with an attenuation of 3 dB, the resistance value of the first resistor R12 is approximately: 12 ohms to 13 ohms, and the resistance value of the second resistor R23 is approximately: 130 ohms to 140 ohms.

[0084] At room temperature (25 °C), when designing a temperature-variable attenuator with an attenuation of 4 dB, the resistance value of the first resistor R12 is approximately: 21 ohms to 23 ohms, and the resistance value of the second resistor R23 is approximately: 115 ohms to 125 ohms.

[0085] On the other hand, compared with the technical solution of the existing temperature-compensated attenuator (such as the patent CN1671041A), the difference of the technical solution of the present application is that the main bodies of the two resistors of the technical solution of the present application are not attached to each other. When the main bodies of the two resistors of the temperature-compensated attenuator of the patent CN1671041A are attached to each other, its circuit principle is equivalent to a T-type or π-type structure circuit, while the circuit principle of the technical solution of the present application constitutes an L-type structure or an inverted L-type structure; compared with the technical solution of the existing temperature-compensated attenuator (such as the patent CN101752637A), the difference of the technical solution of the present application is that the circuit principle of the temperature-compensated attenuator of the patent CN101752637A is equivalent to a T-type or π-type structure circuit, and the second resistor R23 of the technical solution of the present application is directly connected to only one of the signal electrodes and is not connected to the other signal electrode.

[0086] It can be seen that the temperature variable attenuator mainly composed of two resistors in this application cannot be obtained simply by removing one resistor from the three-resistor temperature-compensated attenuator. It requires the inventor to break away from the inertial thinking of the conventional or well-known technical architecture of the three-resistor T-type or π-type architecture and obtain it through the verification of creative labor. Moreover, compared with the three-resistor temperature-compensated attenuator, the temperature variable attenuator composed of two resistors not only reduces an order of magnitude in size, but also increases the operating frequency range by more than twice, with better performance and practicability.

[0087] In a second aspect, an embodiment of the present application provides an electronic device, including a temperature variable attenuator.

[0088] When the above-mentioned temperature variable attenuator mainly composed of two resistors is set in the electronic device, compared with a device composed of more than three resistors, it has a smaller volume and lower cost, which is more conducive to the miniaturization of the product; a temperature variable attenuator with higher precision and a larger operating frequency range is beneficial for the electronic device to cope with various working scenarios.

[0089] The above embodiments are only used to illustrate the technical solutions of the present application, rather than to limit them; although the present application has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand that they can still modify the technical solutions described in the foregoing embodiments, or perform equivalent replacements for some of the technical features; and these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of the present application, and should all be included in the protection scope of the present application.

Claims

1. A temperature-variable attenuator, characterized in that, It includes a substrate, a resistor component, two signal electrodes, and a ground electrode; the resistor component only includes a first resistor and a second resistor; The first resistor, the second resistor, the two signal electrodes, and the ground electrode are fixed on the first surface of the substrate. The first resistor is connected between the two signal electrodes. The second resistor is directly connected between one of the signal electrodes and the ground electrode, and the second resistor is not directly connected to the other signal electrode. There is no other resistor between any signal electrode and the ground electrode except the first resistor and the second resistor. At least one of the first resistor and the second resistor is a thermistor; The ground electrode includes: A first part, which is arranged on the first surface of the substrate and is connected to the second resistor; A second part, which is formed by extending from the first part on the first side surface of the substrate adjacent to the first part; A third part, which is formed by extending from the second part on the second surface of the substrate opposite to the first surface.

2. The temperature variable attenuator according to claim 1, wherein: The first resistor is a thermistor and the second resistor is a thermistor; or The first resistor is a thermistor and the second resistor is a fixed resistor; or The first resistor is a fixed resistor and the second resistor is a thermistor.

3. The temperature variable attenuator according to claim 2, wherein One of the first resistor and the second resistor is a positive temperature coefficient thermistor and the other is a negative temperature coefficient thermistor.

4. The temperature-variable attenuator according to claim 1, wherein It further includes a protective layer, which covers the first resistor and the second resistor.

5. The temperature-variable attenuator according to claim 1, characterized in that, The substrate includes a ceramic substrate.

6. The temperature variable attenuator according to claim 1, characterized in that, The geometric shape of the first resistor is a polygon or a multi-angle shape.

7. The temperature-variable attenuator according to claim 1, characterized in that, The signal electrodes are electrodes made of gold or silver palladium, the ground electrode is an electrode made of gold and / or silver palladium, and the first resistor and the second resistor are film resistors.

8. An electronic device, characterized in that, It includes the temperature variable attenuator according to any one of claims 1-7.

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