Plasma processing apparatus and method for manufacturing semiconductor device using same

Abstract

A plasma processing apparatus includes: a plasma chamber; a radio frequency (RF) power supply configured to generate plasma in the plasma chamber; an electromagnet configured to apply a magnetic field to the plasma; and a pulse current generator configured to provide a pulse current to the electromagnet, where each period of the pulse current includes a first portion and a second portion after the first portion, and the pulse current generator is further configured to: provide the pulse current to the electromagnet in a first direction at the first portion to generate a magnetic field, and providing a pulse current to the electromagnet at the second portion in a second direction opposite the first direction to reduce the intensity of the magnetic field generated at the first portion.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims the priority of Korean Patent Application No. 10-2023-0125479 filed in the Korean Intellectual Property Office on September 20, 2023, the disclosure of which is incorporated herein by reference. Technical Field

[0003] The present disclosure relates to a plasma processing apparatus and a method for manufacturing a semiconductor device using the same, and more particularly, to a plasma processing apparatus that uses a magnetic field to control plasma distribution and a method for manufacturing a semiconductor device using the same. Background Art

[0004] Semiconductor devices can be formed through various semiconductor manufacturing processes such as etching processes, deposition processes, ashing processes, and cleaning processes. In particular, a plasma process that uses plasma to accelerate a desired chemical reaction such as deposition or etching has recently been used in various ways.

[0005] As semiconductor devices become more and more highly integrated, technology that can more precisely control plasma is required. For example, technology that uses a magnetic field to control plasma distribution is being studied. Summary of the invention

[0006] One or more example embodiments provide a plasma processing apparatus that may facilitate process optimization.

[0007] Furthermore, one or more example embodiments provide a method of manufacturing a semiconductor device using a plasma processing apparatus that can facilitate process optimization.

[0008] Aspects of the present disclosure are not limited to those described above, and additional aspects of the present disclosure not mentioned herein will be clearly understood by those skilled in the art from the following description of the present disclosure.

[0009] According to one aspect of the example embodiments, a plasma processing apparatus includes: a plasma chamber; a radio frequency (RF) power supply configured to generate plasma in the plasma chamber; an electromagnet configured to apply a magnetic field to the plasma; and a pulse current generator configured to provide a pulse current to the electromagnet, wherein each cycle of the pulse current includes a first portion and a second portion after the first portion, and the pulse current generator is further configured to: provide the pulse current to the electromagnet in a first direction at the first portion to generate a magnetic field, and provide the pulse current to the electromagnet in a second direction opposite to the first direction at the second portion to reduce the intensity of the magnetic field generated at the first portion.

[0010] According to one aspect of the example embodiments, a plasma processing apparatus includes: a plasma chamber; a radio frequency (RF) power supply configured to generate plasma in the plasma chamber; an electromagnet configured to apply a magnetic field to the plasma; and a pulse current generator configured to provide a direct current (DC) pulse signal to the electromagnet, wherein each cycle of the DC pulse signal includes a first portion and a second portion after the first portion, and the pulse current generator is further configured to: provide the DC pulse signal at a first level having a first polarity at the first portion, and provide the DC pulse signal at a second level having a second polarity at the second portion, the second polarity being opposite to the first polarity.

[0011] According to one aspect of an example embodiment, a plasma processing apparatus includes: a chamber body; a stage in which a substrate is mounted; a distribution plate that sprays a process gas into the chamber body; a radio frequency (RF) power supply configured to generate plasma from the process gas; a direct current (DC) power supply configured to provide a DC signal; a timing controller configured to generate a DC pulse signal from the DC signal; and an electromagnet in the distribution plate, the electromagnet configured to generate a magnetic field by using the DC pulse signal, wherein each cycle of the DC pulse signal includes a first portion and a second portion after the first portion, at the first portion, the DC pulse signal is provided at a first level having a first polarity, and at the second portion, the DC pulse signal is provided at a second level having a second polarity, the second polarity being opposite to the first polarity. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] The above and other aspects and features of the present disclosure will become more apparent by describing in detail example embodiments of the present disclosure with reference to the accompanying drawings, in which:

[0013] Figure 1 A plasma processing apparatus according to one or more embodiments is shown;

[0014] Figure 2 It is shown Figure 1 A plan view of an electromagnet of a plasma processing device;

[0015] Figure 3 It is shown Figure 1 A timing diagram of a pulse current of a plasma processing device;

[0016] Figure 4 is a timing diagram showing the effects of a plasma processing apparatus according to one or more embodiments;

[0017] Figure 5 and Figure 6 are various timing diagrams illustrating pulse currents of a plasma processing apparatus according to one or more embodiments;

[0018] Figure 7 A plasma processing apparatus according to one or more embodiments is shown;

[0019] Figure 8 It is shown Figure 7 A plan view of an electromagnet of a plasma processing device;

[0020] Fig. 9 It is shown Figure 7 A timing diagram of a pulse current of a plasma processing device;

[0021] Fig.10 A plasma processing apparatus according to one or more embodiments is shown;

[0022] Fig.11 It is shown Fig.10 A plan view of an electromagnet of a plasma processing device;

[0023] Fig.12 , Fig.13 and Fig.14 It is shown Fig.10 A timing diagram of a pulse current of a plasma processing device;

[0024] Fig.15 , Fig.16 and Fig.17 A plasma processing apparatus according to an embodiment is shown;

[0025] Fig.18 A plasma processing apparatus according to one or more embodiments is shown;

[0026] Fig.19 It is shown Fig.18 An enlarged view of area Z1;

[0027] Fig. 20 A plasma processing apparatus according to one or more embodiments is shown;

[0028] Fig.21 It is shown Fig. 20 an enlarged view of region Z2; and

[0029] Fig. 22 and Fig.23 A method for manufacturing a semiconductor device according to an embodiment is shown. DETAILED DESCRIPTION

[0030] The description only illustrates the principles of the present disclosure. Those skilled in the art will be able to design one or more arrangements (although not explicitly described herein) that embody the principles of the present disclosure. In addition, all examples cited herein are primarily and explicitly used only for illustrative purposes to help readers understand the principles of the present disclosure and the concepts contributed by the inventors to improve the prior art, and should be interpreted as not being limited to these specifically cited examples and conditions. In addition, all statements cited herein for the principles, aspects, embodiments, and specific examples thereof of the present disclosure are intended to include their equivalents.

[0031] The terms used in this disclosure are only used to describe specific embodiments, and may not be intended to limit the scope of another embodiment. Unless clearly indicated differently in the context, singular expressions may include plural expressions. The terms used herein including technical or scientific terms may have the same meanings as those generally understood by those of ordinary skill in the technical field described in this disclosure. The terms defined in the general dictionary in the terms used in this disclosure may be interpreted as meanings identical or similar to the contextual meanings of the relevant technology, and unless clearly defined in this disclosure, are not interpreted as meanings of ideal or excessive forms. In some cases, even the terms defined in this disclosure may not be interpreted as excluding embodiments of the present disclosure.

[0032] In one or more embodiments of the present disclosure described below, a hardware method is described as an example. However, since one or more embodiments of the present disclosure include technologies using both hardware and software, various embodiments of the present disclosure do not exclude software-based methods.

[0033] In addition, in the present disclosure, in order to determine whether a specific condition is satisfied or achieved, the expression of greater than or less than can be used, but this is only a description of an expression example, and does not exclude the description of greater than or equal to or less than or equal to. The condition described as "greater than or equal to" can be replaced with "greater than", the condition described as "less than or equal to" can be replaced with "less than", and the condition described as "greater than or equal to and less than" can be replaced with "greater than and less than or equal to". In addition, hereinafter, "A" to "B" means at least one of the elements from A (including A) to B (including B).

[0034] The terms "include" and "comprises" and their derivatives refer to inclusion without limitation. The term "or" is an inclusive term, meaning "and / or". The phrase "at least one of..." when used with a list of items means that different combinations of one or more of the listed items can be used, and only one item in the list may be required. For example, "at least one of A, B, and C" includes any of the following combinations: A, B, C, A and B, A and C, B and C, A and B and C, and any variations thereof. The expression "at least one of a, b, or c" may mean only a, only b, only c, both a and b, both a and c, both b and c, all of a, b, and c, or variations thereof. Similarly, the term "set" means one or more. Thus, a set of items may be a single item or a set of two or more items.

[0035] In the following, reference will be made to Figures 1 to 3 A plasma processing apparatus according to an exemplary embodiment is described.

[0036] Figure 1 A plasma processing apparatus according to one or more embodiments is shown. Figure 2 It is shown Figure 1 A plan view of an electromagnet of a plasma processing device.

[0037] refer to Figure 1 and Figure 2 , a plasma processing apparatus according to one or more embodiments may include a plasma chamber 100, a distribution plate 130, an electromagnet 140, a gas supply 150, an RF power supply 160, and a pulse current generator 165. In an embodiment, the pulse current generator 165 may include a direct current (DC) power supply 170 and a timing controller 180.

[0038] The plasma chamber 100 may provide an area for processing a substrate W by using a plasma process. The substrate W may include a wafer and / or at least one material layer on the wafer as a target of a process performed in the plasma chamber 100. The process on the substrate W may correspond to an etching process, a deposition process, an ashing process, a cleaning process, or other processes. In an embodiment, the plasma chamber 100 may include a chamber body 110, a stage 120, and a focus ring 125.

[0039] The chamber body 110 generates plasma P and provides an internal area for processing a substrate W. The chamber body 110 can separate the internal area from the outside. The chamber body 110 can be a clean room facility capable of controlling pressure and temperature with high precision. The overall external structure of the chamber body 110 can correspond to, for example, a cylindrical shape, an elliptical cylindrical shape, a polygonal cylindrical shape, or other shapes. The chamber body 110 can include, for example, a metal material, such as aluminum (Al), but is not limited thereto. In one or more embodiments, the chamber body 110 can be kept in a grounded state to block noise from the outside that may occur during the plasma process.

[0040] The stage 120 may be disposed in the chamber main body 110. The substrate W may be mounted on and supported by the stage 120. The stage 120 may include, for example, an electrostatic chuck (ESC), but is not limited thereto.

[0041] The focus ring 125 may be disposed on the stage 120. The focus ring 125 may be in the form of a ring surrounding the substrate W disposed on the stage 120. The focus ring 125 may fix the substrate W disposed on the stage 120. In addition, the focus ring 125 may improve the efficiency of the plasma process by focusing the plasma P toward the surface of the substrate W. The focus ring 125 may include, for example, silicon (Si), but is not limited thereto.

[0042] The gas supply part 150 may provide a process gas G to the plasma chamber 100 . The process gas G may be a source gas for generating plasma P in the plasma chamber 100 .

[0043] In the plasma chamber 100, the distribution plate 130 may be connected to the gas supply 150. The distribution plate 130 may receive the process gas G from the gas supply 150 and distribute the process gas G onto the substrate W. For example, the process gas G provided from the gas supply 150 may be sprayed onto the substrate W through the gas holes of the distribution plate 130. In one or more embodiments, the distribution plate 130 may include an ion filter. The process gas G provided from the gas supply 150 may be filtered through the ion filter and distributed onto the substrate W.

[0044] The RF power supply 160 may provide a radio frequency (RF) power signal to generate or control the plasma P. For example, the stage 120 may include a first electrode, and the distribution plate 130 may include a second electrode facing the first electrode. The first electrode of the stage 120 may be connected to the RF power supply 160, and the second electrode of the distribution plate 130 may be grounded. When the process gas G is supplied into the plasma chamber 100 through the distribution plate 130, the RF power supply 160 may supply RF power to the first electrode of the stage 120. Therefore, the plasma P may be generated between the first electrode of the stage 120 and the second electrode of the distribution plate 130. The RF power signal for generating the plasma P may have a frequency in the range of several MHz to several hundred MHz (e.g., about 60 MHz), but the frequency is not limited thereto.

[0045] The capacitively coupled plasma (CCP) method is described as an example of generating plasma P. The embodiments of the present disclosure are not limited thereto. In some other embodiments, plasma P may be generated in an inductively coupled plasma (ICP) manner. In some other embodiments, plasma P may be generated by a combination of a CCP manner and an ICP manner.

[0046] In one or more embodiments, the RF power signal provided from the RF power supply 160 may have a macro-pulse. For example, in the "ON" portion of the macro-pulse, the RF power supply 160 may generate plasma P by providing an RF power signal having a micro-pulse of about 60 MHz. In addition, in the "OFF" portion of the macro-pulse, the RF power supply 160 may be turned off so that it does not generate plasma P. The macro-pulse may have a frequency in the range of several kHz to tens of kHz (e.g., about 1 kHz), but the frequency is not limited thereto.

[0047] The electromagnet 140 may generate a magnetic field when current flows in the form of a coil. The magnetic field generated by the electromagnet 140 may be applied to the plasma P to control the distribution of the plasma P. The electromagnet 140 may include a solenoid, but is not limited thereto.

[0048] In one or more embodiments, the magnetic field generated from the electromagnet 140 may have a direction intersecting the upper surface of the substrate W. For example, the central axis of the coil constituting the electromagnet 140 may intersect the upper surface of the substrate W (e.g., perpendicular to the upper surface of the substrate W). Therefore, the magnetic field generated by the electromagnet 140 may be applied to the plasma P in a direction intersecting the upper surface of the substrate W (e.g., a vertical direction).

[0049] In one or more embodiments, the electromagnet 140 may apply a magnetic field to the plasma P from a position above the plasma P. For example, the electromagnet 140 may be disposed on an upper surface of the distribution plate 130 in the chamber body 110, but this is merely exemplary. In one or more embodiments, the electromagnet 140 may be disposed on a lower surface of the distribution plate 130. Alternatively, the electromagnet 140 may be disposed outside the chamber body 110.

[0050] The pulse current generator 165 may be connected to the electromagnet 140. For example, the pulse current generator 165 may form a closed circuit with the electromagnet 140. The pulse current generator 165 may generate a pulse current PS (eg, Figure 1 As shown), where the "ON" part and the "OFF" part are repeated. The electromagnet 140 can receive the pulse current PS from the pulse current generator 165, and can form a "magnetic field" that changes with time. Hereinafter, the magnetic field may be referred to as a "time-varying magnetic field".

[0051] In one or more embodiments, the pulse current generator 165 may control the pulse current PS to flow in a predetermined direction along the electromagnet 140 at the “ON” portion of the pulse current PS. Figure 2 As shown, the pulse current PS may be controlled to flow in a first direction D1 (clockwise direction) along the electromagnet 140 , or may be controlled to flow in a second direction D2 (counterclockwise direction) along the electromagnet 140 .

[0052] In one or more embodiments, the frequency of the pulse current PS may be 100 Hz or higher. That is, the period of the pulse current PS may be 10 ms or shorter. In one or more embodiments, the frequency of the pulse current PS may be 1 kHz or higher. That is, the period of the pulse current PS may be 1 ms or shorter.

[0053] In one or more embodiments, the pulse current PS may be provided in response to (or based on) a macro pulse of an RF power signal provided from the RF power supply 160. For example, the first frequency of the macro pulse and the second frequency of the pulse current PS may be about 1 kHz. The pulse current PS may be synchronized or asynchronous with the macro pulse of the RF power signal. Alternatively, the pulse current PS may have a phase offset from the macro pulse of the RF power signal.

[0054] In one or more embodiments, the pulse current PS may include a direct current (DC) pulse signal. For example, the pulse current generator 165 may include a DC power supply 170 and a timing controller 180.

[0055] The DC power supply 170 may provide a DC signal. The timing controller 180 may be connected to the DC power supply 170. The timing controller 180 may convert the DC signal provided from the DC power supply 170 into a DC pulse signal. For example, the timing controller 180 may generate a DC pulse signal by controlling an "ON" portion and an "OFF" portion of the DC signal.

[0056] The DC power supply 170 and the timing controller 180 may form a closed circuit with the electromagnet 140. For example, the DC power supply 170 may be connected to one end of the electromagnet 140, and the timing controller 180 may be connected to the other end of the electromagnet 140.

[0057] Figure 3 It is shown Figure 1 Timing diagram of the pulse current of the plasma processing device. Figure 4 1 is a timing diagram showing the effects of a plasma processing apparatus according to one or more embodiments. Figure 3 and Figure 4 , a solid line represents a current applied to the electromagnet 140 according to the pulse current PS, and a dotted line represents a magnetic field generated by the electromagnet 140 according to the pulse current PS.

[0058] refer to Figures 1 to 4 In the plasma processing apparatus according to one or more embodiments, each period T1 of the pulse current PS may include a first portion S1 , a second portion S2 after the first portion S1 , and a third portion S3 after the second portion S2 .

[0059] For example, at the first cycle T1 of the pulse current PS, the first portion S1 may be defined as from the starting time point 0 to the time point t1, the second portion S2 may be defined as from the time point t1 to the time point t2, and the third portion S3 may be defined as from the time point t2 to the time point t3. As the pulse current PS continues, the first portion S1, the second portion S2, and the third portion S3 may be repeated periodically.

[0060] At the first portion S1, the pulse current PS may be provided at a first level LV1 having a first polarity (eg, +). Figure 2 The pulse current PS is provided in the clockwise direction of the pulse current. Figure 3 As shown, the current applied to the electromagnet 140 at the first part S1 (e.g., 0 to t1, t3 to t4, or t6 to t7) can reach the first level LV1, and a magnetic field in a predetermined direction (e.g., in a direction toward or away from the plasma P) can be generated from the electromagnet 140.

[0061] At the second portion S2, the pulse current PS may be provided at a second level LV2 having a second polarity (eg, -) opposite to the first polarity. For example, the pulse current PS may be provided at a second level LV2 having a second polarity (eg, -) opposite to the first polarity. Figure 2 The pulse current PS is provided in the counterclockwise direction. Figure 3 As shown, the current applied to the electromagnet 140 at the second portion S2 (eg, t1 to t2, t4 to t5, or t7 to t8) may reach the second level LV2, and the intensity of the magnetic field generated at the first portion S1 may be rapidly reduced.

[0062] In one or more embodiments, the magnetic field strength at the end time point (e.g., t2, t5, or t8) of the second portion S2 may be approximately 10% or less compared to the magnetic field strength at the end time point (e.g., t1, t4, or t7) of the first portion S1. In one or more embodiments, the magnetic field strength at the end time point (e.g., t2, t5, or t8) of the second portion S2 may be approximately 5% or less compared to the magnetic field strength at the end time point (e.g., t1, t4, or t7) of the first portion S1. In some other embodiments, the magnetic field strength at the end time point (e.g., t2, t5, or t8) of the second portion S2 may be approximately 1% or less compared to the magnetic field strength at the end time point (e.g., t1, t4, or t7) of the first portion S1.

[0063] The third portion S3 may be an "OFF" portion. Figure 3 As shown, the current applied to the electromagnet 140 at the third portion S3 (eg, t2 to t3, t5 to t6, or t8 to t9) may reach zero (0). In addition, the pulse current PS may not generate an additional magnetic field.

[0064] The length of the second portion S2 and the size of the second level LV2 can be adjusted so that the magnetic field is "eliminated" at the end time point (e.g., t3, t6, or t9) of each cycle T1 of the pulse current PS. In this case, the term "disappears" (or is eliminated) means that the magnetic field is completely eliminated and has an intensity that does not affect the distribution of the plasma P. For example, Figure 3 As shown, at the end time point (eg, t3, t6, or t9) of each cycle T1 of the pulse current PS, the intensity of the magnetic field generated by the electromagnet 140 may be zero (0).

[0065] In one or more embodiments, the length of the second portion S2 may be shorter than the length of the first portion S1, and the magnitude of the second level LV2 (i.e., the absolute value of the second level LV2) may be greater than the magnitude of the first level LV1 (i.e., the absolute value of the first level LV1). In this case, the magnetic field generated at the first portion S1 may be controlled and "eliminated" more quickly.

[0066] In one or more embodiments, the length of the second portion S2 may be less than or equal to about 25% of the length of the first portion S1. For example, the length of the second portion S2 may be about 10% to about 25% of the length of the first portion S1.

[0067] In one or more embodiments, the size of the second level LV2 may be about two or more times the size of the first level LV1. For example, the size of the second level LV2 may be about 2 to about 5 times the size of the first level LV1.

[0068] As semiconductor devices become more and more highly integrated, the technology that can control plasma needs to be more precise. For example, technology that uses a magnetic field to control the distribution of plasma is being studied.

[0069] As described above, the plasma processing apparatus according to one or more embodiments can control the distribution of plasma P by forming a time-varying magnetic field using a pulse current PS. The time-varying magnetic field can improve the controllability of the distribution of plasma P by inducing the temporal behavior of plasma P.

[0070] However, when an RF current equal to or greater than about 100 Hz is used as a pulse current for forming a time-varying magnetic field, there arises a problem that the controllability is lost because time for eliminating the magnetic field at each cycle cannot be obtained. Figure 3 The pulse current PS is different. Figure 4 Each cycle T1 of the pulse current PS of the embodiment of the present invention may include only an "ON" portion S1' provided at a first level LV1 and an "OFF" portion S2' after the "ON" portion S1'. At the "ON" portion S1', the pulse current PS may generate a magnetic field of the electromagnet 140. The "OFF" portion S2' may eliminate the magnetic field generated at the "ON" portion S1'. However, when a high-frequency (e.g., about 100 Hz or higher) pulse current PS is applied to the electromagnet 140, the magnetic field generated at the "ON" portion S1' may not be completely eliminated at the "OFF" portion S2'. For example, at the end time point (e.g., t2) of the first cycle T1 of the pulse current PS, the intensity of the magnetic field generated by the electromagnet 140 may remain without being completely eliminated. Therefore, the magnetic field applied to the plasma P at the subsequent cycle T1 (e.g., t2 to t4) may be different from the magnetic field applied to the plasma P at the previous cycle T1 (e.g., 0 to t2), which may reduce the plasma distribution control capability using the time-varying magnetic field.

[0071] and Figure 4Different from the time-varying magnetic field shown in FIG. 1 , according to one or more embodiments, the plasma processing apparatus can control the plasma distribution even in the case of a high-frequency pulse current PS by using the second portion S2, wherein the second portion S2 is used to apply a current in a direction opposite to the first portion S1 after the first portion S1 to form a magnetic field. Specifically, as described above with reference to FIG. Figure 3 As described above, since the pulse current PS can have a first polarity (e.g., +) at the first portion S1 and can be provided as a second polarity (e.g., -) at the second portion S2 after the first portion S1, the intensity of the magnetic field generated at the first portion S1 can be quickly controlled and "eliminated" at the second portion S2. Therefore, the control window can be improved, so that a plasma processing apparatus that is easy to optimize the process can be provided.

[0072] Figure 5 and Figure 6 1 is a diagram showing various timing diagrams of pulse current of a plasma processing device according to an embodiment. Figures 1 to 4 Redundant parts of those described.

[0073] refer to Figure 5 , in the plasma processing apparatus according to one or more embodiments, each period T1 of the pulse current PS may further include a fourth portion S4 prior to the first portion S1 .

[0074] For example, at the first cycle T1 of the pulse current PS, the fourth portion S4 may be defined as from the starting time point 0 to the time point t1, the first portion S1 may be defined as from the time point t1 to the time point t2, the second portion S2 may be defined as from the time point t2 to the time point t3, and the third portion S3 may be defined as from the time point t3 to the time point t4. As the pulse current PS continues, the fourth portion S4, the first portion S1, the second portion S2, and the third portion S3 may be repeated periodically.

[0075] At the fourth portion S4, the pulse current PS may be provided at a third level LV3 having a first polarity (eg, +). Figure 2 In addition, at the fourth portion S4, the pulse current PS may be provided at a third level LV3, which is greater than the first level LV1. In this case, Figure 5 As shown, the magnetic field generated by the electromagnet 140 can reach a predetermined level more quickly, and the plasma distribution control capability using the time-varying magnetic field can be further improved.

[0076] In one or more embodiments, the length of the fourth portion S4 may be less than or equal to about 25% of the length of the first portion S1. For example, the length of the fourth portion S4 may be about 10% to about 25% of the length of the first portion S1.

[0077] refer to Figure 6 , in the plasma processing apparatus according to one or more embodiments, each period T1 of the pulse current PS may not include an “OFF” portion.

[0078] For example, at the first cycle T1 of the pulse current PS, the first portion S1 may be defined from the starting time point 0 to the time point t1, and the second portion S2 may be defined from the time point t1 to the time point t2. As the pulse current PS continues, the first portion S1 and the second portion S2 may be repeated periodically.

[0079] In one or more embodiments, the length of the second portion S2 and the magnitude of the second level LV2 may be adjusted so that the magnetic field is “eliminated” at the end time point (e.g., t2, t4, or t6) of the second portion S2. For example, at the end time point (e.g., t2, t4, or t6) of the second portion S2, the magnetic field intensity generated by the electromagnet 140 may be zero (0).

[0080] Figure 7 A plasma processing apparatus according to one or more embodiments is shown. Figure 8 It is shown Figure 7 The above reference will be briefly described or omitted. Figures 1 to 6 Redundant parts of those described.

[0081] refer to Figure 7 and Figure 8 In the plasma processing apparatus according to one or more embodiments, the electromagnet 140 may include a first sub-coil 140a and a second sub-coil 140b.

[0082] Each of the first sub-coil 140a and the second sub-coil 140b may generate a magnetic field when current flows. The magnetic field generated by the first sub-coil 140a and the second sub-coil 140b may be applied to the plasma P to control the distribution of the plasma P. Each of the first sub-coil 140a and the second sub-coil 140b may include a solenoid, but is not limited thereto.

[0083] like Figure 8As shown, the first sub-coil 140a may have a first radius R1, and the second sub-coil 140b may have a second radius R2 that is different from the first radius R1. For example, the second radius R2 of the second sub-coil 140b may be greater than the first radius R1 of the first sub-coil 140a. In one or more embodiments, the first sub-coil 140a and the second sub-coil 140b may share the 'same' center axis. In the present disclosure, the term "same" not only means completely identical, but also includes slight differences that may arise due to process margins, etc.

[0084] In one or more embodiments, the difference between the first radius R1 and the second radius R2 may be about 10% or less relative to the first radius R1. In this case, the first sub-coil 140a and the second sub-coil 140b may control the distribution of plasma P in substantially the same region.

[0085] The pulse current generator 165 may be connected to the first sub-coil 140a and the second sub-coil 140b, respectively. For example, the DC power supply 170 may include a first sub-DC power supply 170a and a second sub-DC power supply 170b, and the timing controller 180 may include a first sub-timing controller 180a connected to the first sub-DC power supply 170a and a second sub-timing controller 180b connected to the second sub-DC power supply 170b.

[0086] The first sub-timing controller 180a may convert the first DC signal provided from the first sub-DC power supply 170a into a first DC pulse signal PS1. The first sub-DC power supply 170a and the first sub-timing controller 180a may form a closed circuit with the first sub-coil 140a. Therefore, the first DC pulse signal PS1 may be provided to the first sub-coil 140a.

[0087] The second sub-timing controller 180b may convert the second DC signal provided from the second sub-DC power supply 170b into a second DC pulse signal PS2. In addition, the second sub-DC power supply 170b and the second sub-timing controller 180b may form a closed circuit with the second sub-coil 140b. Therefore, the second DC pulse signal PS2 may be provided to the second sub-coil 140b.

[0088] In one or more embodiments, the frequency of the first DC pulse signal PS1 and the frequency of the second DC pulse signal PS2 may be 100 Hz or higher. In one or more embodiments, the frequency of the first DC pulse signal PS1 and the frequency of the second DC pulse signal PS2 may be 1 kHz or higher.

[0089] In one or more embodiments, the first DC pulse signal PS1 applied to the first sub-coil 140a and the second DC pulse signal PS2 applied to the second sub-coil 140b may have respective directions different from each other. Figure 8 As shown, the first DC pulse signal PS1 may flow in a first direction D1 (clockwise) along the first sub-coil 140a, and the second DC pulse signal PS2 may flow in a second direction D2 (counterclockwise) along the second sub-coil 140b.

[0090] The electromagnet 140 has been described as including only two sub-coils (the first sub-coil 140a and the second sub-coil 140b), but this is merely exemplary, and the electromagnet 140 may include three or more sub-coils as needed.

[0091] Fig. 9 It is shown Figure 7 The timing diagram of the pulse current of the plasma processing device. Fig. 9 In the figure, the solid line represents the current applied to the first sub-coil 140a according to the first DC pulse signal PS1, the double-dotted line represents the current applied to the second sub-coil 140b according to the second DC pulse signal PS2, and the dot-dashed line represents the magnetic field generated by the electromagnet 140 according to the first DC pulse signal PS1 and the second DC pulse signal PS2.

[0092] refer to Figures 7 to 9 , each of the first DC pulse signal PS1 and the second DC pulse signal PS2 may include a first portion S1 , a second portion S2 , and a third portion S3 .

[0093] At the first portion S1, the first DC pulse signal PS1 may be provided at a first level LV1 having a first polarity (eg, +). Figure 8 The first DC pulse signal PS1 is provided in the clockwise direction. Fig. 9 As shown, the current applied to the first sub coil 140a at the first portion S1 (e.g., 0 to t1, t3 to t4, or t6 to t7) may reach the first level LV1. The first portion S1 of the second DC pulse signal PS2 may be an "OFF" portion. Thus, a magnetic field may be generated from the electromagnet 140 in a predetermined direction (e.g., in a direction toward or away from the plasma P).

[0094] At the second portion S2, the second DC pulse signal PS2 may be provided at a second level LV2 having a second polarity (eg, -). Figure 8 The second DC pulse signal PS2 is provided in the counterclockwise direction. Fig. 9As shown, the current applied to the second sub-coil 140b at the second portion S2 (e.g., t1 to t2, t4 to t5, or t7 to t8) may reach the second level LV2. The second portion S2 of the first DC pulse signal PS1 may be an "OFF" portion. Therefore, the strength of the magnetic field generated at the first portion S1 may be rapidly reduced.

[0095] The third portion S3 of the first DC pulse signal PS1 and the third portion S3 of the second DC pulse signal PS2 may both be “OFF” portions. Therefore, at the end time point (eg, t3, t6, or t9) of each cycle T1, the magnetic field strength generated by the electromagnet 140 may be zero (0).

[0096] Fig.10 A plasma processing apparatus according to one or more embodiments is shown. Fig.11 It is shown Fig.10 The above reference will be briefly described or omitted. Figures 1 to 9 Redundant parts of those described.

[0097] refer to Fig.10 and Fig.11 In the plasma processing apparatus according to one or more embodiments, the electromagnet 140 may include a first coil 142 and a second coil 144 .

[0098] When current flows, each of the first coil 142 and the second coil 144 may generate a magnetic field. The magnetic field generated by the first coil 142 and the second coil 144 may be applied to the plasma P to control the distribution of the plasma P. Each of the first coil 142 and the second coil 144 may include a solenoid, but is not limited thereto.

[0099] like Fig.11 As shown, the first coil 142 may have a third radius R3, and the second coil 144 may have a fourth radius R4 different from the third radius R3. For example, the fourth radius R4 of the second coil 144 may be greater than the third radius R3 of the first coil 142. In one or more embodiments, the first coil 142 and the second coil 144 may share the same central axis.

[0100] In one or more embodiments, the difference between the third radius R3 and the fourth radius R4 may be about 10% or more relative to the third radius R3. In this case, the first coil 142 and the second coil 144 may control the distribution of plasma P in different regions.

[0101] The pulse current generator 165 may be connected to the first coil 142 and the second coil 144, respectively. For example, the DC power supply 170 may include a third sub-DC power supply 172 and a fourth sub-DC power supply 174. The timing controller 180 may include a third sub-timing controller 182 (connected to the third sub-DC power supply 172) and a fourth sub-timing controller 184 (connected to the fourth sub-DC power supply 174).

[0102] The third sub-timing controller 182 may convert the third DC signal provided from the third sub-DC power supply 172 into a third DC pulse signal PS3. In addition, the third sub-DC power supply 172 and the third sub-timing controller 182 may form a closed circuit with the first coil 142. Therefore, the third DC pulse signal PS3 may be provided to the first coil 142.

[0103] The fourth sub-timing controller 184 may convert the fourth DC signal provided from the fourth sub-DC power supply 174 into a fourth DC pulse signal PS4. In addition, the fourth sub-DC power supply 174 and the fourth sub-timing controller 184 may form a closed circuit with the second coil 144. Therefore, the fourth DC pulse signal PS4 may be provided to the second coil 144.

[0104] In one or more embodiments, the frequency of the third DC pulse signal PS3 and the frequency of the fourth DC pulse signal PS4 may be 100 Hz or higher. In one or more embodiments, the frequency of the third DC pulse signal PS3 and the frequency of the fourth DC pulse signal PS4 may be 1 kHz or higher.

[0105] In one or more embodiments, the pulse current generator 165 can control the third DC pulse signal PS3 and the fourth DC pulse signal PS4 to flow independently along the electromagnet 140. For example, Fig.11 As shown, the third DC pulse signal PS3 may be controlled to flow in the first direction D1 or the second direction D2 along the first coil 142 , and the fourth DC pulse signal PS4 may be controlled to flow in the first direction D1 or the second direction D2 along the second coil 144 .

[0106] Figure 12 to Figure 14 It is shown Fig.10 Various timing diagrams of pulse current in a plasma processing device. Figure 12 to Figure 14 , the solid line in the upper graph represents the current applied to the first coil 142 according to the third DC pulse signal PS3, and the solid line in the lower graph represents the current applied to the second coil 144 according to the fourth DC pulse signal PS4.

[0107] refer to Figures 10 to 12 , each of the third DC pulse signal PS3 and the fourth DC pulse signal PS4 may include a first portion S1 , a second portion S2 , and a third portion S3 .

[0108] At the first portion S1, the third DC pulse signal PS3 may be provided at a first level LV1 having a first polarity (eg, +), and the fourth DC pulse signal PS4 may be provided at a third level LV3 having a first polarity (eg, +). Fig.11 The third level LV3 is shown to be the same as the first level LV1, but this is only exemplary, and the third level LV3 may be less than or equal to the first level LV1.

[0109] At the second portion S2, the third DC pulse signal PS3 may be provided at a second level LV2 having a second polarity (e.g., -), and the fourth DC pulse signal PS4 may be provided at a fourth level LV4 having a second polarity (e.g., -). Fig.11 The fourth level LV4 has the same size as the second level LV2, but this is only exemplary, and the size of the fourth level LV4 may be less than or equal to the size of the second level LV2.

[0110] The third portion S3 of the third DC pulse signal PS3 and the third portion S3 of the fourth DC pulse signal PS4 may both be “OFF” portions.

[0111] refer to Fig.10 , Fig.11 and Fig.13 , the third DC pulse signal PS3 and the fourth DC pulse signal PS4 may have respective phases different from each other.

[0112] For example, the starting time point (e.g., 0, t3, or t6) of the first portion S1 of the third DC pulse signal PS3 may be different from the starting time point (e.g., u1, u4, or u7) of the first portion S1 of the fourth DC pulse signal PS4. In addition, the starting time point (e.g., t1, t4, or t7) of the second portion S2 of the third DC pulse signal PS3 may be different from the starting time point (e.g., u2, u5, or u8) of the second portion S2 of the fourth DC pulse signal PS4. In addition, the starting time point (e.g., t2, t5, or t8) of the third portion S3 of the third DC pulse signal PS3 may be different from the starting time point (e.g., u3, u6, or u9) of the second portion S2 of the fourth DC pulse signal PS4.

[0113] refer to Fig.10 , Fig.11 and Fig.14 , the third DC pulse signal PS3 and the fourth DC pulse signal PS4 may have respective periods different from each other.

[0114] For example, the third DC pulse signal PS3 may include a first portion S1, a second portion S2, and a third portion S3, and the fourth DC pulse signal PS4 may include a fifth portion S11, a sixth portion S12, and a seventh portion S13.

[0115] At the fifth portion S11, the fourth DC pulse signal PS4 may be provided at a third level LV3 having a first polarity (e.g., +). At the sixth portion S12, the fourth DC pulse signal PS4 may be provided at a fourth level LV4 having a second polarity (e.g., -). The seventh portion S13 of the fourth DC pulse signal PS4 may be an "OFF" portion.

[0116] The period T2 of the fourth DC pulse signal PS4 (the period T2 includes the fifth part S11, the sixth part S12 and the seventh part S13) can be different from the period T1 of the third DC pulse signal PS3 (the period T1 includes the first part S1, the second part S2 and the third part S3). For example, the length of the fifth part S11 can be different from the length of the first part S1. The length of the sixth part S12 is shown as the same as the length of the second part S2, but this is only exemplary, and the length of the sixth part S12 can be different from the length of the second part S2. In addition, the length of the seventh part S13 is shown as the same as the length of the third part S3, but this is only exemplary, and the length of the seventh part S13 can be different from the length of the third part S3.

[0117] Figures 15 to 17 A plasma processing apparatus according to one or more embodiments is shown. The above referenced Figures 1 to 14 Redundant parts of those described.

[0118] refer to Fig.15 In the plasma processing apparatus according to one or more embodiments, the electromagnet 140 may apply a magnetic field to the plasma P in a lateral direction of the plasma P.

[0119] For example, the electromagnet 140 may be disposed on a side of the chamber body 110, such as Fig.15 The electromagnet 140 is shown to be disposed outside the chamber body 110 , but this is merely exemplary, and the electromagnet 140 may be disposed inside the chamber body 110 .

[0120] refer to Fig.16 In the plasma processing apparatus according to one or more embodiments, the electromagnet 140 may be disposed to be inclined.

[0121] For example, the lower surface of the electromagnet 140 may be inclined at a predetermined angle θ relative to the upper surface of the distribution plate 130. The electromagnet 140 may control the distribution of the plasma P by obliquely applying a magnetic field above the plasma P. For example, the electromagnet 140 may be used to control the distribution of the plasma P formed asymmetrically.

[0122] refer to Fig.17 The plasma processing apparatus according to one or more embodiments may further include a magnetic field shielding shell 190 .

[0123] The magnetic field shielding shell 190 may surround a portion of the electromagnet 140. For example, the magnetic field shielding shell 190 may be provided in a ring shape to surround a portion of the electromagnet 140. In addition, the magnetic field shielding shell 190 may expose another portion of the electromagnet 140 facing the plasma P. For example, when the electromagnet 140 is provided above the plasma P, the magnetic field shielding shell 190 may expose the lower surface of the electromagnet 140, and may cover the inner side, the outer side, and the upper surface of the electromagnet 140.

[0124] The magnetic field shielding shell 190 can further improve the controllability of the distribution of the plasma P by concentrating the magnetic field generated by the electromagnet 140 toward the plasma P. The magnetic field shielding shell 190 may include, but is not limited to, iron (Fe), nickel (Ni), cobalt (Co), or permalloy having high magnetic permeability.

[0125] Fig.18 A plasma processing apparatus according to one or more embodiments is shown. Fig.19 It is shown Fig.18 The above reference will be briefly described or omitted. Figures 1 to 17 Redundant parts of those described.

[0126] refer to Fig.18 and Fig.19 In the plasma processing apparatus according to one or more embodiments, the electromagnet 140 may be disposed in the distribution plate 130 .

[0127] For example, Fig.19 As shown, the distribution plate 130 may include a groove 130t extending downward from the upper surface of the distribution plate 130. The electromagnet 140 may be disposed in the groove 130t. For example, the groove 130t may be provided in a ring shape to accommodate the coil-shaped electromagnet 140.

[0128] As the frequency of the pulse current applied to the electromagnet 140 increases, a problem may arise in which a so-called eddy current effect (eddy current) is generated in a conductor region disposed around the electromagnet 140 (for example, in the distribution plate 130 between the plasma P and the electromagnet 140). The plasma processing apparatus according to one or more embodiments can minimize the eddy current effect (eddy current) by disposing the electromagnet 140 in the distribution plate 130. Specifically, as described above, since the electromagnet 140 is disposed in the groove 130t of the distribution plate 130, the conductor region between the electromagnet 140 and the plasma P can be minimized. Therefore, a plasma processing apparatus can be provided to avoid performance degradation caused by the eddy current effect (eddy current).

[0129] In one or more embodiments, the electromagnet 140 may include a plurality of coils 142, 144, and 146, for example, Fig.18 shown.

[0130] When current flows, each of the plurality of coils 142, 144, and 146 may generate a magnetic field. The magnetic field generated by each of the coils 142, 144, and 146 may be applied to the plasma P to control the distribution of the plasma P. Each of the coils 142, 144, and 146 may include a solenoid, but is not limited thereto.

[0131] In one or more embodiments, the coils 142 , 144 , and 146 may control the distribution of plasma P in different regions. For example, the radius difference between the coils 142 , 144 , and 146 may be about 10% or more.

[0132] Each of the coils 142, 144, and 146 is shown as a single coil, but this is exemplary only. In one or more embodiments, each of the coils 142, 144, and 146 may include two or more sub-coils (e.g., Figure 7 and Figure 8 The first sub-coil 140a and the second sub-coil 140b).

[0133] The pulse current generator 165 may be connected to each of the coils 142, 144, 146. For example, the DC power source 170 may include a plurality of sub-DC power sources 172, 174, and 176, and the timing controller 180 may include a plurality of sub-timing controllers 182, 184, and 186.

[0134] Fig. 20 A plasma processing apparatus according to one or more embodiments is shown. Fig.21 It is shown Fig. 20 The above reference will be briefly described or omitted. Figures 1 to 19 Redundant parts of those described.

[0135] refer to Fig. 20 and Fig.21 The plasma processing apparatus according to one or more embodiments may further include a magnetic field shielding shell 190 .

[0136] The magnetic field shielding shell 190 may be disposed in the groove 130t of the distribution plate 130. The magnetic field shielding shell 190 may expose the lower surface of the electromagnet 140 disposed in the groove 130t, and may cover the inner side, the outer side, and the upper surface of the electromagnet 140. Since the magnetic field shielding shell 190 is similar to the above reference except that the magnetic field shielding shell 190 is disposed in the groove 130t, Fig.17 The magnetic field shielding case described is similar, so a detailed description thereof will be omitted.

[0137] In the following, reference will be made to Figures 1 to 23 A method for manufacturing a semiconductor device according to an exemplary embodiment is described.

[0138] Fig. 22 and Fig.23 is a flowchart illustrating a method for manufacturing a semiconductor device according to one or more embodiments.

[0139] refer to Figure 1 , Fig. 22 and Fig.23 , first, a substrate W is loaded into a plasma processing device (S1100). The substrate W may include, for example, silicon (Si). The substrate W may include a semiconductor element such as germanium (Ge), or a compound semiconductor such as silicon carbide (SiC), gallium arsenide (GaAs), indium arsenide (InAs), and indium phosphide (InP). In one or more embodiments, the substrate W may include a conductive region, such as a well doped with impurities. The substrate W may have a first surface and a second surface, the first surface being an active surface, and the second surface being a passive surface opposite to the first surface. The substrate W may be disposed on the stage 120 so that the second surface faces the stage 120.

[0140] The substrate W may be a wafer on which a series of processes are performed. The series of processes that may be performed on the substrate W may include: i) an oxidation process for forming an oxide film, ii) a photolithography process including spin coating, exposure, and development, iii) a thin film deposition process, iv) a dry or wet etching process, and / or v) a metal wiring process.

[0141] The oxidation process is a process of forming a thin and uniform silicon oxide film by chemically reacting oxygen or steam with the surface of the silicon substrate at a high temperature of 800° C. to 1200° C. The oxidation process may include dry oxidation and wet oxidation. In dry oxidation, an oxide film may be formed by reacting with oxygen, and in wet oxidation, an oxide film may be formed by reacting oxygen with steam.

[0142] In one or more embodiments, a silicon-on-insulator (SOI) structure may be formed on the substrate W through an oxidation process. The substrate W may include a buried oxide layer. In one or more embodiments, the substrate may have various device isolation structures, such as shallow trench isolation (STI).

[0143] The photolithography process is a process of transferring a circuit pattern previously formed on a photolithography mask to a substrate W through exposure. The photolithography process may be performed in the order of spin coating, exposure, and development processes.

[0144] The thin film deposition process can be any of, for example, atomic layer deposition (ALD), chemical vapor deposition (CVD), plasma enhanced CVD (PECVD), metal organic CVD (MOCVD), physical vapor deposition (PVD), reactive pulsed laser deposition, molecular beam epitaxy and DC magnetron sputtering.

[0145] The dry etching process may be any one of reactive ion etching (RIE), deep RIE (DRIE), ion beam etching (IBE), and Ar milling. As another example, the dry etching process that may be performed on the substrate W may be atomic layer etching (ALE). In addition, the wet etching process that may be performed on the substrate W may be a process using Cl 2 , HCl, CHF 3 , CH 2 F 2 , CH 3 F, H 2 , BCL 3 、SiCl 4 Br 2 、HBr、NF 3 CF 4 , C 2 F 6 , C 4 F 8 , SF 6 , O 2 、SO 2 or COS as an etchant gas.

[0146] The metal wiring process may be a process of forming conductive wiring (metal wiring) to realize a circuit pattern for operating a semiconductor device. The transmission paths of ground, power, and signals for operating a semiconductor device may be formed by the metal wiring process. The metal wiring may include gold, platinum, silver, aluminum, tungsten, etc.

[0147] In one or more embodiments, a planarization process, such as a chemical mechanical polishing (CMP) process, an ion implantation process, etc., may be performed.

[0148] The substrate W may be transported by a transport device including a complete clean room transport system. The transport device may include a conveyor system, etc. The transport device may load the substrate W into the above-mentioned plasma processing apparatus. In some cases, the transport device may load the substrate W into a loading port adjacent to the above-mentioned plasma processing apparatus, and the substrate W may be loaded from the loading port into the above-mentioned plasma processing apparatus by a separate robot arm.

[0149] Next, the substrate W is processed (S1200). The processing of the substrate W can be referred to above. Figures 1 to 21 The plasma processing apparatus described is performed.

[0150] For example, plasma P may be generated in the plasma chamber 100 by using the gas supply 150 and the RF power supply 160 (S1210). Subsequently, a time-varying magnetic field may be generated using the electromagnet 140 and the pulse current generator 165, and the distribution of the plasma P may be controlled using the time-varying magnetic field (S1220). Subsequently, the substrate W may be processed using the distribution-controlled plasma P (S1230). The process of processing the substrate W may include various processes, such as an etching process, a deposition process, an ashing process, a cleaning process, etc., but is not limited thereto.

[0151] Then, the substrate W is unloaded from the plasma processing apparatus (S1300). The substrate W may be transported by, for example, a transport device.

[0152] Thereafter, a subsequent process (S1400) is performed.

[0153] For example, the unloaded substrate W may be input into a facility for subsequent processes, which may include an oxidation process, a photolithography process, a thin film deposition process, a dry or wet etching process, and / or a metal wiring process, and may include an electrical die sorting (EDS) process, a packaging process, and a packaging test process.

[0154] The EDS process may refer to a process of applying an electric signal to a semiconductor device formed on a substrate W and determining whether the semiconductor device is defective through a signal output from the semiconductor device in response to the applied electric signal.

[0155] The packaging process may include a wafer back grinding process, a wafer sawing process, a die attach process, a wire bonding process, a molding process, a marking process, a solder ball mounting process, and a singulation (also referred to as a dicing) process.

[0156] The package test process may include assembly, DC test, aging test, monitoring aging test, post-aging test and final test.

[0157] While certain example embodiments of the present disclosure have been particularly shown and described, it will be understood by those skilled in the art that various changes in form and details may be made without departing from the spirit and scope of the present disclosure as defined by the following claims.

Claims

1. A plasma processing device, comprising: Plasma chamber; a radio frequency (RF) power source configured to generate plasma in the plasma chamber; an electromagnet configured to apply a magnetic field to the plasma; as well as a pulse current generator configured to provide a pulse current to the electromagnet, wherein each cycle of the pulse current includes a first part and a second part following the first part, and Wherein, the pulse current generator is further configured as: providing the pulsed current to the electromagnet at the first portion in a first direction to generate the magnetic field, and The pulse current is supplied to the electromagnet at the second portion in a second direction opposite to the first direction to reduce the intensity of the magnetic field generated at the first portion.

2. The plasma processing apparatus according to claim 1, wherein: The frequency of the pulse current is at least 100 Hz.

3. The plasma processing apparatus according to claim 1, wherein: Each cycle of the pulse current further includes a third portion following the second portion, and Wherein, the third part is a shut-off part.

4. The plasma processing apparatus according to claim 1, wherein: The pulse current includes a direct current (DC) pulse signal, and Wherein, the pulse current generator is further configured as: providing the DC pulse signal at a first level having a first polarity at the first portion, and The DC pulse signal is provided at the second portion at a second level having a second polarity, the second polarity being opposite to the first polarity.

5. The plasma processing apparatus according to claim 1, wherein: The electromagnet includes a first coil having a first radius and a second coil having a second radius, the second radius being different from the first radius, and The pulse current includes a first direct current (DC) pulse signal provided to the first coil and a second DC pulse signal provided to the second coil.

6. The plasma processing apparatus according to claim 5, wherein: The difference between the first radius and the second radius is at least 10% of the first radius.

7. The plasma processing apparatus according to claim 1, wherein: The electromagnet comprises a first sub-coil having a first radius and a second sub-coil having a second radius, the second radius being different from the first radius, The pulse current includes a first DC pulse signal provided to the first sub-coil and a second DC pulse signal provided to the second sub-coil. wherein the first DC pulse signal has the first direction at the first portion, and The second DC pulse signal has the second direction at the second portion.

8. The plasma processing apparatus according to claim 7, wherein: The difference between the first radius and the second radius is at least 10% of the first radius.

9. A plasma processing device, comprising: Plasma chamber; a radio frequency (RF) power source configured to generate plasma in the plasma chamber; an electromagnet configured to apply a magnetic field to the plasma; as well as a pulse current generator configured to provide a direct current (DC) pulse signal to the electromagnet, Each cycle of the DC pulse signal includes a first part and a second part following the first part, and Wherein, the pulse current generator is further configured as: providing the DC pulse signal at a first level having a first polarity at the first portion, and The DC pulse signal is provided at the second portion at a second level having a second polarity, the second polarity being opposite to the first polarity.

10. The plasma processing apparatus according to claim 9, wherein: The frequency of the DC pulse signal is at least 100 Hz.

11. The plasma processing apparatus according to claim 9, wherein: The second portion is shorter than the first portion.

12. The plasma processing apparatus according to claim 11, wherein: The second length of the second portion is 25% or less of the first length of the first portion.

13. The plasma processing apparatus according to claim 9, wherein: The second magnitude of the second level is greater than the first magnitude of the first level.

14. The plasma processing apparatus according to claim 13, wherein: The second size of the second level is at least two or more times greater than the first size of the first level.

15. The plasma processing apparatus according to claim 9, wherein: Each cycle of the DC pulse signal further includes a third portion preceding the first portion, The pulse current generator is further configured to: provide the DC pulse signal at a third level having the first polarity at the third portion, and The third level is greater than the first level.

16. The plasma processing apparatus according to claim 9, wherein: The pulse current generator includes: a direct current (DC) power supply configured to provide a DC signal; and a timing controller configured to generate the DC pulse signal from the DC signal.

17. A plasma processing device comprising: Chamber body; a stage, in the chamber body, on which a substrate is mounted; a distribution plate for injecting a process gas into the chamber body; a radio frequency (RF) power source configured to generate a plasma from the process gas; A direct current (DC) power supply configured to provide a DC signal; a timing controller configured to generate a DC pulse signal from the DC signal; as well as an electromagnet in the distribution plate, the electromagnet being configured to generate a magnetic field by using the DC pulse signal, Each cycle of the DC pulse signal includes a first part and a second part following the first part. wherein, at the first portion, the DC pulse signal is provided at a first level having a first polarity, and Wherein, at the second portion, the DC pulse signal is provided at a second level having a second polarity, and the second polarity is opposite to the first polarity.

18. The plasma processing apparatus according to claim 17, wherein: The frequency of the DC pulse signal is 100 Hz or higher.

19. The plasma processing apparatus according to claim 17, wherein: The distribution plate includes a groove extending from an upper surface of the distribution plate, and Wherein, the electromagnet is arranged in the groove. 20 . The plasma processing apparatus of claim 19 , further comprising a magnetic field shielding case in the groove, the magnetic field shielding case exposing a lower surface of the electromagnet.

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