Component of semiconductor processing equipment and manufacturing method thereof

Abstract

The embodiment of the invention discloses a part of semiconductor processing equipment and a manufacturing method of the part. The component includes: a first silicon carbide layer; the second silicon carbide layer is arranged on one side of the first silicon carbide layer, and the number of crystal boundaries of the second silicon carbide layer is different from the number of crystal boundaries of the first silicon carbide layer.

Description

Technical Field

[0001] The embodiments of the present disclosure relate to the field of semiconductor technology, and more particularly to a component of semiconductor processing equipment and a method for manufacturing the same. Background Art

[0002] Semiconductor manufacturing processes include etching processes and thin film deposition processes. In the etching process, the plasma formed by ionization of an etchant (such as a fluorine-containing gas) is used to bombard the wafer to leave the desired circuit pattern on the wafer surface; the thin film deposition process uses a deposition method to repeatedly stack insulating materials between layers of metal to form a thin film. Since both processes use plasma technology and other technologies that are prone to corroding the cavity and components, the components in semiconductor processing equipment are required to have good plasma resistance and low reactivity and low conductivity to fluorine-containing etching gases.

[0003] The components of traditional semiconductor processing equipment are made of silicon or quartz. With the advancement of integrated circuit miniaturization, the demand for etching processes in integrated circuit manufacturing has continued to increase, and the importance of etching plasma power and energy has continued to increase. The utilization rate of components made of silicon carbide (SiC) materials has become increasingly high. However, there are still many problems with silicon carbide-based components that need to be improved. Summary of the invention

[0004] The present invention provides a component of a semiconductor processing equipment and a method for manufacturing the same.

[0005] The first aspect of the present disclosure provides a component of a semiconductor processing equipment. The component includes:

[0006] a first silicon carbide layer;

[0007] A second silicon carbide layer is provided on one side of the first silicon carbide layer, wherein the number of grain boundaries of the second silicon carbide layer is different from the number of grain boundaries of the first silicon carbide layer.

[0008] In some embodiments, the first silicon carbide layer includes crystals of a first crystal system, and the second silicon carbide layer includes crystals of a second crystal system, wherein the second crystal system is different from the first crystal system.

[0009] In some embodiments, the first silicon carbide layer also includes crystals of the second crystal system, wherein the proportion of crystals of the first crystal system in the first silicon carbide layer is greater than the proportion of crystals of the second crystal system; the second silicon carbide layer also includes crystals of the first crystal system, wherein the proportion of crystals of the second crystal system in the second silicon carbide layer is greater than the proportion of crystals of the first crystal system.

[0010] In some embodiments, the atomic density of the crystals of the first crystal system is different from the atomic density of the crystals of the second crystal system.

[0011] In some embodiments, one of the first crystal system and the second crystal system is a cubic crystal system, and the other of the first crystal system and the second crystal system is a hexagonal crystal system.

[0012] In some embodiments, the component further includes: a connector, wherein the connector is disposed between the first silicon carbide layer and the second silicon carbide layer, wherein the connector connects the first silicon carbide layer and the second silicon carbide layer, respectively.

[0013] In some embodiments, the connector includes a third silicon carbide layer; wherein the crystal system of the third silicon carbide layer is the same as that of the first silicon carbide layer, or the crystal system of the third silicon carbide layer is the same as that of the second silicon carbide layer.

[0014] In some embodiments, the connecting member includes a third silicon carbide layer and a fourth silicon carbide layer, and the third silicon carbide layer is arranged between the first silicon carbide layer and the fourth silicon carbide layer; wherein the crystal system of the third silicon carbide layer is the same as the crystal system of the first silicon carbide layer, and the crystal system of the fourth silicon carbide layer is the same as the crystal system of the second silicon carbide layer.

[0015] In some embodiments, the density of the third silicon carbide layer is less than the density of the first silicon carbide layer; and the density of the fourth silicon carbide layer is less than the density of the second silicon carbide layer.

[0016] In some embodiments, the first silicon carbide layer includes a step portion on a side facing the second silicon carbide layer, the step portion having a lower step surface, an upper step surface, and a step side surface, the step side surface connecting the lower step surface and the upper step surface; the second silicon carbide layer includes:

[0017] a first portion, the first portion covering the lower step surface and a portion of the step side surface relatively close to the lower step surface;

[0018] a second portion, the second portion covering the upper step surface;

[0019] a third portion, the third portion covering another portion of the step side surface relatively close to the upper step surface and a side surface of the second portion;

[0020] Wherein, the connecting member extends between the first part and the third part and between the second part and the third part.

[0021] In some embodiments, the thickness of the third portion is greater than or equal to the thickness of the first portion, and the thickness of the third portion is greater than or equal to the thickness of the second portion.

[0022] In some embodiments, at least one of the first silicon carbide layer and the second silicon carbide layer is a recycled silicon carbide layer.

[0023] In some embodiments, the component is a planar structure, or the component has a stepped structure.

[0024] A second aspect of the present disclosure provides a method for manufacturing parts of semiconductor processing equipment. The manufacturing method comprises:

[0025] forming a first silicon carbide layer;

[0026] A second silicon carbide layer is formed on one side of the first silicon carbide layer, wherein the number of grain boundaries of the second silicon carbide layer is different from the number of grain boundaries of the first silicon carbide layer.

[0027] In some embodiments, the manufacturing method further includes: forming a connector between the first silicon carbide layer and the second silicon carbide layer, wherein the connector connects the first silicon carbide layer and the second silicon carbide layer respectively.

[0028] In some embodiments, forming a connector between the first silicon carbide layer and the second silicon carbide layer includes:

[0029] applying a connection material between the first silicon carbide layer and the second silicon carbide layer;

[0030] A first heat treatment is performed on the first silicon carbide layer and the second silicon carbide layer coated with the connecting material, so that the connecting material reacts to generate a third silicon carbide layer to form the connecting member; wherein the crystal system of the third silicon carbide layer is the same as that of the first silicon carbide layer, or the crystal system of the third silicon carbide layer is the same as that of the second silicon carbide layer.

[0031] In some embodiments, the thickness of the connecting material is 0.05 mm to 1 mm.

[0032] In some embodiments, the temperature range of the first heat treatment is 900° C. to 2500° C.; the connecting material includes at least one of carbon powder, silicon powder, silicon carbide powder, an organic binder, a silane precursor, and an organic solvent.

[0033] In some embodiments, forming a connector between the first silicon carbide layer and the second silicon carbide layer includes:

[0034] stacking the first silicon carbide layer and the second silicon carbide layer so that the first silicon carbide layer is in contact with the second silicon carbide layer;

[0035] A second heat treatment is performed on the stacked first silicon carbide layer and the second silicon carbide layer, so that the first silicon carbide layer diffuses toward the second silicon carbide layer to form a third silicon carbide layer, and the second silicon carbide layer diffuses toward the first silicon carbide layer to form a fourth silicon carbide layer, and the third silicon carbide layer and the fourth silicon carbide layer constitute the connecting member; wherein the crystal system of the third silicon carbide layer is the same as that of the first silicon carbide layer, and the crystal system of the fourth silicon carbide layer is the same as that of the second silicon carbide layer.

[0036] In some embodiments, the temperature of the second heat treatment ranges from 1600°C to 2300°C.

[0037] In some embodiments, forming a connector between the first silicon carbide layer and the second silicon carbide layer includes:

[0038] placing the first silicon carbide layer in a reaction chamber;

[0039] Introducing a first reaction gas into the reaction chamber to deposit the connecting member on one side of the first silicon carbide layer;

[0040] The forming of a second silicon carbide layer on one side of the first silicon carbide layer comprises:

[0041] A second reaction gas is introduced into the reaction chamber to deposit the second silicon carbide layer on a side of the connector relatively away from the first silicon carbide layer; wherein the first reaction gas and the second reaction gas both include carbon and silicon, and a composition ratio of the carbon and silicon elements in the first reaction gas is greater than a composition ratio of the carbon and silicon elements in the second reaction gas.

[0042] In some embodiments, the temperature range for depositing the connector and the second silicon carbide layer is 900° C. to 1500° C.; the first reaction gas and the second reaction gas include at least one of trichloromethylsilane, tetrachlorosilane, and alkane.

[0043] In some embodiments, at least one of the first silicon carbide layer and the second silicon carbide layer is a recycled silicon carbide layer; and the manufacturing method further comprises:

[0044] The recycled silicon carbide layer is subjected to surface pretreatment; wherein the surface pretreatment comprises at least one of oxidation, cleaning, and grinding.

[0045] In some embodiments, the surface roughness of the recovered silicon carbide layer after surface pretreatment is less than 0.5 μm, and the surface impurity content of the recovered silicon carbide layer after surface pretreatment is less than 0.1 ppm.

[0046] In the present disclosure, by providing a component including a first silicon carbide layer and a second silicon carbide layer having different numbers of grain boundaries, a composite silicon carbide component can be formed, which is beneficial to improving the etching resistance of the component. BRIEF DESCRIPTION OF THE DRAWINGS

[0047] Figure 1 It is a schematic diagram of a cross section of a component provided in the first embodiment of the present disclosure.

[0048] Figure 2 It is a schematic diagram of a cross section of a component provided in the second embodiment of the present disclosure.

[0049] Figure 3 It is a schematic diagram of a cross section of a component provided in the third embodiment of the present disclosure.

[0050] Figure 4 It is a schematic diagram of a cross section of a component provided in the fourth embodiment of the present disclosure.

[0051] Figure 5 It is a schematic diagram of a cross section of a component provided in the fifth embodiment of the present disclosure.

[0052] Figure 6 It is a flow chart of a method for manufacturing a component provided in an embodiment of the present disclosure. DETAILED DESCRIPTION

[0053] In order to facilitate the understanding of the present disclosure, the exemplary embodiments of the present disclosure will be described in more detail below with reference to the relevant drawings. Although the exemplary embodiments of the present disclosure are shown in the drawings, it should be understood that the present disclosure can be implemented in various forms and should not be limited by the specific embodiments set forth herein. On the contrary, these embodiments are provided in order to enable a more thorough understanding of the present disclosure and to fully convey the scope of the present disclosure to those skilled in the art.

[0054] In the following description, a large number of specific details are given to provide a more thorough understanding of the present disclosure. However, it is obvious to those skilled in the art that the present disclosure can be implemented without one or more of these details. In some embodiments, in order to avoid confusion with the present disclosure, some technical features known in the art are not described; that is, all features of the actual embodiment may not be described here, and well-known functions and structures may not be described in detail.

[0055] The present disclosure will be described in more detail below by way of example with reference to the accompanying drawings. The advantages and features of the present disclosure will become more apparent from the following description and claims. It should be noted that the accompanying drawings are in a very simplified form and are not in exact proportions, and are only used to conveniently and clearly assist in explaining the purpose of the embodiments of the present disclosure.

[0056] It will be understood that the meaning of “on,” “over,” and “over” of the present disclosure should be interpreted in the broadest manner, so that “on” not only means that it is “on” something with no intervening features or layers (i.e., directly on something), but also includes the meaning that it is “on” something with intervening features or layers.

[0057] In the embodiments of the present disclosure, the terms "first", "second", "third", etc. are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence.

[0058] In the disclosed embodiments, the term "layer" refers to a material portion including an area having a thickness. A layer may extend over the entirety of a lower or upper structure, or may have an extent less than the extent of a lower or upper structure. In addition, a layer may be an area of ​​a homogeneous or inhomogeneous continuous structure having a thickness less than the thickness of a continuous structure. For example, a layer may be located between the top and bottom surfaces of a continuous structure, or a layer may be between any horizontal faces at the top and bottom surfaces of a continuous structure. A layer may extend horizontally, vertically, and / or along an inclined surface. A layer may include multiple sublayers.

[0059] It should be noted that the technical solutions described in the embodiments of the present disclosure can be arbitrarily combined without conflict.

[0060] It should be noted that the components in some possible embodiments of the present disclosure can be used as at least one of a focusing ring, a shower head, a tray, and an edge ring in a semiconductor processing device, and the semiconductor processing device can be a thin film deposition device or an etching device. The thin film deposition device includes a chemical vapor deposition (CVD) device, a metal-organic chemical vapor deposition (MOCVD) device, a physical vapor deposition (PVD) device, an atomic layer deposition (ALD) device, etc. The etching device includes a reactive ion etching (RIE) device, an inductively coupled plasma etching (ICP) device, a magnetic neutral loop plasma etching (NLD) device, an ion beam etching (IBE) device, etc.

[0061] Figure 1 Schematic diagram of a cross section of a component provided by the first embodiment of the present disclosure. Figure 1 As shown, the component 100 includes a first silicon carbide layer 110 and a second silicon carbide layer 120 ; the second silicon carbide layer 120 is disposed on one side of the first silicon carbide layer 110 , wherein the number of grain boundaries of the second silicon carbide layer 120 is different from the number of grain boundaries of the first silicon carbide layer 110 .

[0062] It should be noted that the inventors of the present application have found through research that the number of silicon carbide grain boundaries in parts made of silicon carbide materials is one of the important factors affecting the anti-etching performance of parts. Specifically, the more grain boundaries there are in silicon carbide, the easier it is for plasma to etch into the interior of silicon carbide through the grain boundaries, which increases the etched area of ​​silicon carbide microscopically. At the same time, when etching into a certain depth of the grain boundary, small-sized grains near the grain boundary are easy to fall off directly, aggravating the consumption of silicon carbide and making the anti-etching performance of the parts lower.

[0063] Therefore, in some possible embodiments of the present disclosure, by setting a component including a first silicon carbide layer 110 and a second silicon carbide layer 120 having different numbers of grain boundaries, a composite silicon carbide component can be formed, which is beneficial to improving the etching resistance of the silicon carbide component. In practical applications, the silicon carbide layer with fewer grain boundaries can be oriented toward the plasma. For example, if the number of grain boundaries of the first silicon carbide layer 110 is less than the number of grain boundaries of the second silicon carbide layer 120, the first silicon carbide layer 110 can be oriented toward the plasma. For another example, if the number of grain boundaries of the second silicon carbide layer 120 is less than the number of grain boundaries of the first silicon carbide layer 110, the second silicon carbide layer 120 can be oriented toward the plasma. For ease of understanding, the following description will be based on the example that the number of grain boundaries of the second silicon carbide layer 120 is less than the number of grain boundaries of the first silicon carbide layer 110.

[0064] Figure 2 is a schematic diagram of a cross section of a component provided in the second embodiment of the present disclosure. It should be noted that: Figure 2 The same reference numerals are used for the same structures in the embodiment shown in the figure as in the above embodiment, and the same structures can be referred to the relevant description of the above embodiment and will not be described in detail. Only the different structures are described in detail in this embodiment. Figure 1 The difference is that Figure 2 The illustrated component 100 also includes a connecting member 130 .

[0065] Reference Figure 2 As shown, the component 100 further includes a connector 130 , which is disposed between the first silicon carbide layer 110 and the second silicon carbide layer 120 , wherein the connector 130 connects the first silicon carbide layer 110 and the second silicon carbide layer 120 , respectively.

[0066] In some possible embodiments of the present disclosure, by providing a connector 130 between the first silicon carbide layer 110 and the second silicon carbide layer 120 , the connector 130 can connect the first silicon carbide layer 110 and the second silicon carbide layer 120 having different numbers of grain boundaries, thereby forming a composite silicon carbide component.

[0067] In some embodiments, the first silicon carbide layer 110 includes crystals of a first crystal system, and the second silicon carbide layer 120 includes crystals of a second crystal system, wherein the second crystal system is different from the first crystal system. It should be noted that silicon carbide has a variety of crystal systems, for example, a cubic system, a hexagonal system, etc. The second crystal system is different from the first crystal system, including: the first crystal system is a cubic system, and the second crystal system is a hexagonal system; or, the second crystal system is a cubic system, and the first crystal system is a hexagonal system. That is, one of the first crystal system and the second crystal system is a cubic system, and the other of the first crystal system and the second crystal system is a hexagonal system.

[0068] In some possible embodiments of the present disclosure, the first silicon carbide layer 110 and the second silicon carbide layer 120 may both be single crystal silicon carbide, and the crystal systems of the first silicon carbide layer 110 and the second silicon carbide layer 120 are different. For example, the first silicon carbide layer 110 is 3C SiC, and the second silicon carbide layer 120 is 6H SiC. 3C SiC (also known as β-SiC) and 6H SiC (also known as α-SiC) are the two most common types of silicon carbide. 3C SiC belongs to a cubic structure, that is, the crystal system of 3C SiC is a cubic system; 6H SiC belongs to a hexagonal structure, that is, the crystal system of 6HSiC is a hexagonal system. Different crystal systems have an important influence on the physical properties and applications of silicon carbide. For example, the etching resistance of 6H SiC is better than that of 3C SiC. In this way, by connecting 6H SiC and 3C SiC to form a composite silicon carbide component, it is beneficial to improve the etching resistance of the silicon carbide component. In practical applications, 6H SiC can be directed toward the plasma.

[0069] In some embodiments, the first silicon carbide layer 110 also includes crystals of the second crystal system, wherein the proportion of crystals of the first crystal system in the first silicon carbide layer 110 is greater than the proportion of crystals of the second crystal system; the second silicon carbide layer 120 also includes crystals of the first crystal system, wherein the proportion of crystals of the second crystal system in the second silicon carbide layer 120 is greater than the proportion of crystals of the first crystal system.

[0070] In some possible embodiments of the present disclosure, the first silicon carbide layer 110 and the second silicon carbide layer 120 may both be polycrystalline silicon carbide, and the main crystal systems in the first silicon carbide layer 110 and the second silicon carbide layer 120 are different. For example, the first silicon carbide layer 110 includes 3C SiC and 6H SiC, and the proportion of 3C SiC in the first silicon carbide layer 110 is greater than the proportion of 6H SiC, that is, 3C SiC is the main crystal system in the first silicon carbide layer 110; the second silicon carbide layer 120 includes 6H SiC and 3C SiC, and the proportion of 6HSiC in the second silicon carbide layer 120 is greater than the proportion of 3C SiC, that is, 6H SiC is the main crystal system in the second silicon carbide layer 120. Of course, the first silicon carbide layer 110 or the second silicon carbide layer 120 may also include other types of crystals, for example, the first silicon carbide layer 110 or the second silicon carbide layer 120 may also include a small amount of 2H SiC, 4H SiC, etc. In practical applications, the silicon carbide layer whose main crystal system is 6HSiC (for example, the second silicon carbide layer 120 ) may be directed toward plasma.

[0071] In some embodiments, the atomic density of the crystals of the first crystal system is different from the atomic density of the crystals of the second crystal system. It should be noted that atomic density is also one of the important factors affecting the etching resistance of parts. Specifically, the higher the atomic density, the stronger the etching resistance of the crystal. In this embodiment, the first crystal system may be a cubic crystal system, and the second crystal system may be a hexagonal crystal system. The atomic density of the crystals of the hexagonal crystal system is higher than the atomic density of the crystals of the cubic crystal system, that is, the second silicon carbide layer 120 has a stronger etching resistance. In practical applications, the second silicon carbide layer 120 with a higher atomic density can be directed toward the plasma.

[0072] In practical applications, 3C SiC can be prepared by chemical vapor deposition (CVD), and 6H SiC can be prepared by physical vapor transport (PVT). The 6H SiC prepared by PVT has large grains, few grain boundaries, high atomic density, low porosity, and higher etching resistance.

[0073] It should be noted that the grain size of the SiC layer prepared by PVT is much larger than that of the SiC layer prepared by CVD. Specifically, the grain size of the SiC layer prepared by PVT is generally larger than 0.5 mm, and the grain size of the SiC layer prepared by CVD is generally smaller than 0.5 mm. A larger grain size can reduce the number of grain boundaries in the SiC layer, thereby improving the etching resistance of the SiC layer.

[0074] The connector 130 is disposed between the first silicon carbide layer 110 and the second silicon carbide layer 120, and the connector 130 connects the first silicon carbide layer 110 and the second silicon carbide layer 120, respectively. In one example, the crystal system of the connector 130 is the same as that of the first silicon carbide layer 110, for example, the connector 130 may be 3C SiC. In another example, the crystal system of the connector 130 is the same as that of the second silicon carbide layer 120, for example, the connector 130 may be 6H SiC. In yet another example, a portion of the connector 130 close to the first silicon carbide layer 110 has the same crystal system as that of the first silicon carbide layer 110, and another portion of the connector 130 close to the second silicon carbide layer 120 has the same crystal system as that of the second silicon carbide layer 120, that is, the connector 130 may include 3C SiC and 6H SiC.

[0075] In some possible embodiments of the present disclosure, by providing a connector 130 between the first silicon carbide layer 110 and the second silicon carbide layer 120, the connector 130 can connect the first silicon carbide layer 110 (for example, 3C SiC) and the second silicon carbide layer 120 (for example, 6H SiC) with different crystal systems, which is beneficial to improving the etching resistance of the component 100. In practical applications, 6H SiC can be set as the plasma etching surface, that is, the silicon carbide layer whose main crystal system is 6H SiC faces the plasma.

[0076] In some embodiments, the connector 130 includes a third silicon carbide layer; wherein the crystal system of the third silicon carbide layer is the same as that of the first silicon carbide layer, or the crystal system of the third silicon carbide layer is the same as that of the second silicon carbide layer.

[0077] It should be noted that the connector 130 may be a single film layer or a composite film layer. In this embodiment, the connector 130 is a single film layer, and the connector 130 is a third silicon carbide layer. The third silicon carbide layer connects the first silicon carbide layer 110 and the second silicon carbide layer 120 respectively. The crystal system of the third silicon carbide layer may be the same as that of the first silicon carbide layer 110 or the second silicon carbide layer 120. For example, the third silicon carbide layer and the first silicon carbide layer 110 are both 3C SiC, which is more conducive to lattice matching between the third silicon carbide layer and the first silicon carbide layer 110, so as to improve the bonding strength between the first silicon carbide layer 110 and the second silicon carbide layer 120. For another example, the third silicon carbide layer and the second silicon carbide layer 120 are both 6H SiC, which is not only conducive to lattice matching between the third silicon carbide layer and the second silicon carbide layer 120 and improves bonding strength, but also increases the thickness of 6H SiC, further improving the etching resistance of the component 100.

[0078] Figure 3 is a schematic diagram of a cross section of a component provided in the third embodiment of the present disclosure. It should be noted that: Figure 3 The same reference numerals are used for the same structures in the embodiment shown in the figure as in the above embodiment, and the same structures can be referred to the relevant description of the above embodiment and will not be described in detail. Only the different structures are described in detail in this embodiment. Figure 2 The difference is that Figure 3 The connector 130 shown is a composite film layer.

[0079] Reference Figure 3 As shown, the connector 130 includes a third silicon carbide layer 131 and a fourth silicon carbide layer 132, and the third silicon carbide layer 131 is arranged between the first silicon carbide layer 110 and the fourth silicon carbide layer 132; wherein the crystal system of the third silicon carbide layer 131 is the same as that of the first silicon carbide layer, and the crystal system of the fourth silicon carbide layer 132 is the same as that of the second silicon carbide layer.

[0080] In some possible embodiments of the present disclosure, a connector 130 having a composite film layer can be formed by solid phase diffusion. Specifically, at high temperature, the first silicon carbide layer 110 diffuses toward the second silicon carbide layer 120, thereby forming a third silicon carbide layer 131 on the surface where the first silicon carbide layer 110 and the second silicon carbide layer 120 contact; the second silicon carbide layer 120 diffuses toward the first silicon carbide layer 110, thereby forming a fourth silicon carbide layer 132 on the surface where the second silicon carbide layer 120 and the first silicon carbide layer 110 contact, therefore, the third silicon carbide layer 131 is disposed between the first silicon carbide layer 110 and the fourth silicon carbide layer 132, the crystal system of the third silicon carbide layer 131 is the same as the crystal system of the first silicon carbide layer, and the crystal system of the fourth silicon carbide layer 132 is the same as the crystal system of the second silicon carbide layer. Here, the temperature range of the solid phase diffusion is 1600°C to 2300°C.

[0081] In some embodiments, the crystal systems of the first silicon carbide layer 110 and the third silicon carbide layer 131 are both cubic, that is, the first silicon carbide layer 110 and the third silicon carbide layer 131 are both 3C SiC; the crystal systems of the second silicon carbide layer 120 and the fourth silicon carbide layer 132 are both hexagonal, that is, the second silicon carbide layer 120 and the fourth silicon carbide layer 132 are both 6H SiC. In this embodiment, the surface of the second silicon carbide layer 120 relatively away from the first silicon carbide layer 110 can be set as a plasma etching surface, that is, the second silicon carbide layer 120 faces the plasma.

[0082] In other embodiments, the crystal systems of the first silicon carbide layer 110 and the third silicon carbide layer 131 are both hexagonal, that is, the first silicon carbide layer 110 and the third silicon carbide layer 131 are both 6H SiC; the crystal systems of the second silicon carbide layer 120 and the fourth silicon carbide layer 132 are both cubic, that is, the second silicon carbide layer 120 and the fourth silicon carbide layer 132 are both 3C SiC. In this embodiment, the surface of the first silicon carbide layer 110 relatively away from the second silicon carbide layer 120 can be set as a plasma etching surface, that is, the first silicon carbide layer 110 faces the plasma.

[0083] In some embodiments, the density of the third silicon carbide layer 131 is less than that of the first silicon carbide layer 110; the density of the fourth silicon carbide layer 132 is less than that of the second silicon carbide layer 120. As mentioned above, since the third silicon carbide layer 131 is formed by solid phase diffusion of the first silicon carbide layer 110, and the fourth silicon carbide layer 132 is formed by solid phase diffusion of the second silicon carbide layer 120, the density of the third silicon carbide layer 131 is less than that of the first silicon carbide layer 110; the density of the fourth silicon carbide layer 132 is less than that of the second silicon carbide layer 120. In some possible embodiments of the present disclosure, the connector 130 can be formed at the contact interface of the first silicon carbide layer 110 and the second silicon carbide layer 120 by solid phase diffusion, which can not only achieve lattice matching but also simplify the process.

[0084] Figure 4 is a schematic diagram of a cross section of a component provided in the fourth embodiment of the present disclosure. It should be noted that: Figure 4 The same reference numerals are used for the same structures in the embodiment shown and in the above embodiment, and the same structures can refer to the relevant descriptions of the above embodiment and will not be described in detail. Only the different structures are described in detail in this embodiment.

[0085] Reference Figure 4 As shown, the first silicon carbide layer 110 includes a step portion on one side facing the second silicon carbide layer 120, and the step portion has a lower step surface S1, an upper step surface S2, and a step side surface S3, and the step side surface S3 connects the lower step surface S1 and the upper step surface S2; the connector 130 covers the lower step surface S1, the upper step surface S2, and the step side surface S3; the second silicon carbide layer 120 covers the connector 130. It can be understood that in some possible embodiments of the present disclosure, the second silicon carbide layer 120 can be a complete silicon carbide layer, and the second silicon carbide layer 120 is conformally bonded to the first silicon carbide layer 110 through the connector 130. Therefore, the quality of the component 100 obtained by connecting the connector 130 is better.

[0086] Figure 5 is a schematic diagram of a cross section of a component provided in the fifth embodiment of the present disclosure. It should be noted that: Figure 5 The same reference numerals are used for the same structures in the embodiment shown and in the above embodiment, and the same structures can refer to the relevant descriptions of the above embodiment and will not be described in detail. Only the different structures are described in detail in this embodiment.

[0087] Reference Figure 5 As shown, the second silicon carbide layer 120 includes: a first portion 121, a second portion 122 and a third portion 123; the first portion 121 covers the lower step surface S1 and a portion of the step side surface S3 relatively close to the lower step surface S1; the second portion 122 covers the upper step surface S2; the third portion 123 covers another portion of the step side surface S3 relatively close to the upper step surface S2 and the side surface of the second portion 122; wherein the connector 130 extends between the first portion 121 and the third portion 123 and between the second portion 122 and the third portion 123. It can be understood that in some possible embodiments of the present disclosure, multiple portions can be spliced ​​on the first silicon carbide layer 110 to form the second silicon carbide layer 120, and the connector 130 extends to the splicing of the multiple portions.

[0088] Figure 4 In the embodiment shown, a relatively thick second silicon carbide layer 120 is required and is not easy to process. Figure 5In the illustrated embodiment, a second silicon carbide layer 120 is formed by splicing a plurality of parts on a first silicon carbide layer 110, and the position of the connector 130 can be arbitrary. When the component 100 is subjected to etching gas from top to bottom, the splicing seams are not easily affected, which not only improves the bonding strength of the splicing seams, but also makes the component 100 easier to process and has a lower manufacturing cost.

[0089] In some embodiments, the thickness of the third portion 123 in the horizontal direction is greater than or equal to the thickness of the first portion 121 in the vertical direction, and the thickness of the third portion 123 in the horizontal direction is greater than or equal to the thickness of the second portion 122 in the vertical direction. Since the third portion 123 is more susceptible to plasma etching, the thickness of the third portion 123 in the horizontal direction can be designed to be thicker, which can not only improve the etching resistance of the component 100, but also extend the service life of the component 100.

[0090] In practical applications, the first part 121, the second part 122 and the third part 123 can be first spliced ​​together to form the second silicon carbide layer 120, and then the first silicon carbide layer 110 and the spliced ​​second silicon carbide layer 120 can be connected; or, the first part 121, the second part 122, and the third part 123 can be respectively connected to different step surfaces of the step portion.

[0091] In some embodiments, at least one of the first silicon carbide layer 110 and the second silicon carbide layer 120 is a recycled silicon carbide layer. Taking the component as a focusing ring as an example, two silicon carbide focusing rings can be connected to form a composite silicon carbide focusing ring, wherein at least one of the two silicon carbide focusing rings is a recycled focusing ring. In some possible embodiments of the present disclosure, since at least one of the first silicon carbide layer 110 and the second silicon carbide layer 120 is a recycled silicon carbide layer, this can not only improve the recycling rate of silicon carbide components, but also reduce production costs.

[0092] In one example, the first silicon carbide layer 110 is a recycled silicon carbide layer, and the second silicon carbide layer 120 is a newly made silicon carbide layer. In another example, the first silicon carbide layer 110 is a newly made silicon carbide layer, and the second silicon carbide layer 120 is a recycled silicon carbide layer. In yet another example, both the first silicon carbide layer 110 and the second silicon carbide layer 120 are recycled silicon carbide layers. The recycled silicon carbide layer used in some possible embodiments of the present disclosure is a silicon carbide component that has been used and recovered through processes such as cleaning and grinding, and the newly made silicon carbide layer is a newly prepared and unused silicon carbide component.

[0093] In some embodiments, the first silicon carbide layer 110 and the second silicon carbide layer 120 are both annular structures, and the component 100 is also annular. For example, the projections of the first silicon carbide layer 110, the second silicon carbide layer 120, and the component 100 on the horizontal plane are all annular. Of course, the projections of the first silicon carbide layer 110, the second silicon carbide layer 120, and the component 100 on the horizontal plane can also be other regular or irregular geometric shapes, and the present disclosure has no special restrictions on this.

[0094] In some embodiments, the component 100 is a planar structure. In other embodiments, the component 100 has a stepped structure.

[0095] Based on the above-mentioned components, some possible embodiments of the present disclosure provide a method for manufacturing components of semiconductor processing equipment. The manufacturing method can be used to form the components in any of the above-mentioned embodiments.

[0096] Figure 6 is a flow chart of a method for manufacturing a component provided by some possible embodiments of the present disclosure. It should be noted that: Figure 6 The steps shown in the operation are not exclusive, and other steps may be performed before, after or between any steps in the operation shown; Figure 6 The steps shown in the figure can be adjusted in order according to actual needs. Figure 6 As shown, the manufacturing method comprises the following steps:

[0097] Step S210: forming a first silicon carbide layer;

[0098] Step S220: forming a second silicon carbide layer on one side of the first silicon carbide layer, wherein the number of grain boundaries of the second silicon carbide layer is different from the number of grain boundaries of the first silicon carbide layer.

[0099] In some possible embodiments of the present disclosure, by forming a second silicon carbide layer having a different number of grain boundaries from the first silicon carbide layer on one side of the first silicon carbide layer, the first silicon carbide layer and the second silicon carbide layer can form a composite silicon carbide component, which is beneficial to improving the etching resistance of the silicon carbide component.

[0100] In some embodiments, the manufacturing method further includes: forming a connector between the first silicon carbide layer and the second silicon carbide layer, wherein the connector connects the first silicon carbide layer and the second silicon carbide layer respectively. In some possible embodiments of the present disclosure, by forming a connector between the first silicon carbide layer and the second silicon carbide layer, the connector can connect the first silicon carbide layer (e.g., 3C SiC) and the second silicon carbide layer (e.g., 6H SiC) having different numbers of grain boundaries, which is beneficial to improving the etching resistance of the silicon carbide parts.

[0101] In some embodiments, the forming of a connector between the first silicon carbide layer and the second silicon carbide layer includes: coating a connecting material between the first silicon carbide layer and the second silicon carbide layer; performing a first heat treatment on the first silicon carbide layer and the second silicon carbide layer coated with the connecting material, so that the connecting material reacts to generate a third silicon carbide layer to form a connector; wherein the crystal system of the third silicon carbide layer is the same as that of the first silicon carbide layer, or the crystal system of the third silicon carbide layer is the same as that of the second silicon carbide layer.

[0102] In some embodiments, the thickness of the connecting material is 0.05 mm to 1 mm, and the thickness of the connecting material is 0.05 mm, 0.06 mm, 0.07 mm, 0.08 mm, 0.09 mm or 1 mm. Of course, the thickness of the connecting material is not limited to the above examples, and the thickness of the connecting material can also be any value between 0.05 mm and 1 mm, and the present disclosure does not limit this.

[0103] In some embodiments, the temperature of the first heat treatment ranges from 900° C. to 2500° C. For example, the temperature of the first heat treatment is 900° C., 1000° C., 1300° C., 1600° C., 2000° C., or 2500° C. Of course, the temperature of the first heat treatment is not limited to the above examples, and the temperature of the first heat treatment can also be any temperature or temperature range from 900° C. to 2500° C., and the present disclosure is not limited thereto.

[0104] In some embodiments, the connecting material includes a reactive connecting material and a precursor connecting material. It can be understood that the type of connecting material determines the connection method of the connecting piece. For example, when the connecting material is a reactive connecting material, the connection method of the connecting piece is reactive connection; when the connecting material is a precursor connecting material, the connection method of the connecting piece is precursor connection.

[0105] Taking the connection material as a reactive connection material as an example, the reactive connection material is uniformly coated between the first silicon carbide layer and the second silicon carbide layer to form a combination. After coating and bonding, the combination is cured at 100° C. to 300° C. in an air atmosphere; the cured combination is reaction-connected at 1400° C. to 1700° C. in a vacuum atmosphere, thereby forming a combination as shown in FIG. Figure 1 In this example, the reactive connection material includes at least one of carbon powder, silicon powder, silicon carbide powder, and an organic binder, and the reactive connection material may be in liquid, paste, or semi-solid state.

[0106] Taking the connection material as a precursor connection material as an example, the precursor connection material is uniformly coated between the first silicon carbide layer and the second silicon carbide layer to form a combination. After coating and bonding, the combination is cured at 100° C. to 300° C. in an air atmosphere; the cured combination is precursor-connected at 900° C. to 1300° C. in an argon or vacuum atmosphere, thereby forming a Figure 1 In this example, the precursor connecting material includes at least one of a silane precursor and an organic solvent, and the precursor connecting material can be in liquid, paste or semi-solid state.

[0107] In some embodiments, the above-mentioned forming a connector between the first silicon carbide layer and the second silicon carbide layer includes: stacking the first silicon carbide layer and the second silicon carbide layer so that the first silicon carbide layer and the second silicon carbide layer are in contact; performing a second heat treatment on the stacked first silicon carbide layer and the second silicon carbide layer so that the first silicon carbide layer diffuses toward the second silicon carbide layer to form a third silicon carbide layer, and the second silicon carbide layer diffuses toward the first silicon carbide layer to form a fourth silicon carbide layer, and the third silicon carbide layer and the fourth silicon carbide layer constitute a connector; wherein the crystal system of the third silicon carbide layer is the same as that of the first silicon carbide layer, and the crystal system of the fourth silicon carbide layer is the same as that of the second silicon carbide layer.

[0108] In some embodiments, the temperature range of the second heat treatment is 1600° C. to 2300° C. For example, the temperature of the second heat treatment is 1600° C., 1700° C., 1800° C., 1900° C., 2000° C., 2100° C., 2200° C. or 2300° C. Of course, the temperature of the second heat treatment is not limited to the above examples, and the temperature of the second heat treatment can also be any temperature or temperature range from 1600° C. to 2300° C. In a specific example, the temperature range of the second heat treatment is 1800° C. to 2100° C.

[0109] Exemplarily, a first silicon carbide layer and a second silicon carbide layer are stacked to form a combination, and the combination is placed in an argon or vacuum atmosphere at 1800° C. to 2100° C. and a pressure of 100 MPa to 300 MPa, so that the first silicon carbide layer and the second silicon carbide layer are connected by grain boundaries and atomic diffusion, thereby forming a Figure 2 In this example, the connecting material between the first silicon carbide layer and the second silicon carbide layer can be omitted.

[0110] In some embodiments, the forming of a connector between the first silicon carbide layer and the second silicon carbide layer comprises: placing the first silicon carbide layer in a reaction chamber; introducing a first reaction gas into the reaction chamber to deposit the connector on one side of the first silicon carbide layer; the above step S220 comprises: introducing a second reaction gas into the reaction chamber to deposit the second silicon carbide layer on a side of the connector relatively away from the first silicon carbide layer; wherein the first reaction gas and the second reaction gas both comprise carbon and silicon, and a composition ratio of carbon to silicon in the first reaction gas is greater than a composition ratio of carbon to silicon in the second reaction gas.

[0111] In some embodiments, the temperature of depositing the connector and the second silicon carbide layer ranges from 900° C. to 1500° C. For example, the temperature of depositing the connector and the second silicon carbide layer is 900° C., 1000° C., 1100° C., 1200° C., 1300° C., 1400° C., or 1500° C. Of course, the temperature of depositing the connector and the second silicon carbide layer is not limited to the above examples, and can also be any temperature or temperature range from 900° C. to 1500° C., and the present disclosure is not limited to this.

[0112] In some embodiments, the first reaction gas and the second reaction gas include at least one of trichloromethylsilane, tetrachlorosilane, and alkanes. Among them, alkanes include methane (CH4), acetylene (C2H2), ethylene (C2H4), propane (C3H8), etc. In this embodiment, the first reaction gas and the second reaction gas both include reaction gases containing carbon and silicon, but the composition ratios of carbon and silicon in the first reaction gas and the second reaction gas are different.

[0113] Taking trichloromethylsilane gas as a single source of reaction gas as an example, the first silicon carbide layer is placed in a reaction chamber, and the reaction temperature is 900°C to 1500°C. Under an argon and nitrogen atmosphere, trichloromethylsilane with a first component ratio of carbon and silicon is introduced into the reaction chamber to form a connector on the surface of the first silicon carbide layer; then trichloromethylsilane with a second component ratio of carbon and silicon is introduced into the reaction chamber to form a second silicon carbide layer on the surface of the connector, and the first component ratio is greater than the second component ratio. In this example, the thickness of the connector and the second silicon carbide layer can be adjusted by controlling the concentration and time of the reaction gas introduced.

[0114] In the above example, a 6H SiC silicon carbide layer can be used as a deposition substrate, and by controlling the ratio of carbon and silicon in the reaction gas, a connector and a second silicon carbide layer can be sequentially formed on the surface of the 6H SiC silicon carbide layer. For example, by first controlling the ratio of carbon and silicon in the reaction gas to be greater than 1:1, 6H SiC can be formed, that is, the connector is 6H SiC; and then controlling the ratio of carbon and silicon in the reaction gas to be 1:1 or close to 1:1, 3C-SiC can be formed, that is, the second silicon carbide layer is 3C-SiC. In this way, not only can the lattice mismatch between the first silicon carbide layer and the second silicon carbide layer be adjusted to improve the bonding strength, but the connector also increases the thickness of the 6H SiC, further improving the etching resistance of the parts.

[0115] In some embodiments, at least one of the first silicon carbide layer and the second silicon carbide layer is a recycled silicon carbide layer; the above-mentioned manufacturing method also includes: performing surface pretreatment on the recycled silicon carbide layer; wherein the surface pretreatment includes at least one of oxidation, cleaning, and grinding.

[0116] Exemplarily, before connecting the first silicon carbide layer and the second silicon carbide layer, the first silicon carbide layer and the second silicon carbide layer may be subjected to surface pretreatment. For example, the connection surfaces of the first silicon carbide layer and the second silicon carbide layer are subjected to oxidation, cleaning, grinding and other processes before connection, so that the surface roughness and surface impurity content of the first silicon carbide layer and the second silicon carbide layer are reduced.

[0117] It should be noted that after the recycled silicon carbide parts are subjected to plasma etching and multiple processing, there are a large number of pores and defects on the connection surface, which will affect the reliability of the re-product. In some possible embodiments of the present disclosure, by performing surface pretreatment on the recycled silicon carbide parts, the surface roughness and surface impurity content of the recycled silicon carbide parts can be reduced, thereby improving the bonding strength and reliability of the first silicon carbide layer and the second silicon carbide layer.

[0118] In some embodiments, the surface roughness of the recovered silicon carbide layer after surface pretreatment is less than 0.5 μm, and the surface impurity content of the recovered silicon carbide layer after surface pretreatment is less than 0.1 ppm.

[0119] In practical applications, after the first silicon carbide layer and the second silicon carbide layer are connected, the connected product can be subjected to oxidation, cleaning, grinding, polishing and other processes to prepare components with high etching resistance.

[0120] Based on the above components, some possible embodiments of the present disclosure provide a semiconductor processing device, which includes the components in any of the above embodiments. The semiconductor processing device can be the above thin film deposition device or etching device.

[0121] The above description is only a specific implementation mode of the present disclosure, but the protection scope of the present disclosure is not limited thereto. Any technician familiar with the technical field can easily think of changes or substitutions within the technical scope disclosed in the present disclosure, which should be included in the protection scope of the present disclosure.

Claims

1. A component of semiconductor processing equipment, characterized in that: include: a first silicon carbide layer; A second silicon carbide layer is provided on one side of the first silicon carbide layer, wherein the number of grain boundaries of the second silicon carbide layer is different from the number of grain boundaries of the first silicon carbide layer.

2. The component according to claim 1, characterized in that The first silicon carbide layer includes crystals of a first crystal system, and the second silicon carbide layer includes crystals of a second crystal system, wherein the second crystal system is different from the first crystal system.

3. The component according to claim 2, characterized in that: The first silicon carbide layer further includes crystals of the second crystal system, wherein a proportion of the crystals of the first crystal system in the first silicon carbide layer is greater than a proportion of the crystals of the second crystal system; The second silicon carbide layer further includes crystals of the first crystal system, wherein a proportion of the crystals of the second crystal system in the second silicon carbide layer is greater than a proportion of the crystals of the first crystal system.

4. The component according to claim 2, characterized in that: The atomic density of the crystal of the first crystal system is different from the atomic density of the crystal of the second crystal system.

5. The component according to claim 2, characterized in that: One of the first crystal system and the second crystal system is a cubic crystal system, and the other of the first crystal system and the second crystal system is a hexagonal crystal system.

6. The component according to claim 1, characterized in that The components also include: A connecting member is provided between the first silicon carbide layer and the second silicon carbide layer, wherein the connecting member connects the first silicon carbide layer and the second silicon carbide layer respectively.

7. The component according to claim 6, characterized in that The connecting member includes a third silicon carbide layer, wherein a crystal system of the third silicon carbide layer is the same as a crystal system of the first silicon carbide layer, or a crystal system of the third silicon carbide layer is the same as a crystal system of the second silicon carbide layer.

8. The component according to claim 6, characterized in that The connecting member includes a third silicon carbide layer and a fourth silicon carbide layer, wherein the third silicon carbide layer is arranged between the first silicon carbide layer and the fourth silicon carbide layer; wherein the crystal system of the third silicon carbide layer is the same as that of the first silicon carbide layer, and the crystal system of the fourth silicon carbide layer is the same as that of the second silicon carbide layer.

9. The component according to claim 8, characterized in that The density of the third silicon carbide layer is smaller than the density of the first silicon carbide layer; and the density of the fourth silicon carbide layer is smaller than the density of the second silicon carbide layer.

10. The component according to claim 6, characterized in that The first silicon carbide layer includes a step portion on a side facing the second silicon carbide layer, wherein the step portion has a lower step surface, an upper step surface, and a step side surface, and the step side surface connects the lower step surface and the upper step surface; The second silicon carbide layer comprises: a first portion, the first portion covering the lower step surface and a portion of the step side surface relatively close to the lower step surface; a second portion, the second portion covering the upper step surface; a third portion, the third portion covering another portion of the step side surface relatively close to the upper step surface and a side surface of the second portion; Wherein, the connecting member extends between the first part and the third part and between the second part and the third part.

11. The component according to claim 10, characterized in that The thickness of the third part in the horizontal direction is greater than or equal to the thickness of the first part in the vertical direction, and the thickness of the third part in the horizontal direction is greater than or equal to the thickness of the second part in the vertical direction.

12. The component according to claim 1, characterized in that At least one of the first silicon carbide layer and the second silicon carbide layer is a recycled silicon carbide layer.

13. The component according to claim 1, characterized in that The component is a planar structure, or the component has a stepped structure.

14. A method for manufacturing a component of a semiconductor processing equipment, characterized in that: include: forming a first silicon carbide layer; A second silicon carbide layer is formed on one side of the first silicon carbide layer, wherein the number of grain boundaries of the second silicon carbide layer is different from the number of grain boundaries of the first silicon carbide layer.

15. The manufacturing method according to claim 14, characterized in that: The manufacturing method further comprises: A connector is formed between the first silicon carbide layer and the second silicon carbide layer, wherein the connector connects the first silicon carbide layer and the second silicon carbide layer respectively.

16. The manufacturing method according to claim 15, characterized in that: The forming of a connector between the first silicon carbide layer and the second silicon carbide layer comprises: applying a connection material between the first silicon carbide layer and the second silicon carbide layer; A first heat treatment is performed on the first silicon carbide layer and the second silicon carbide layer coated with the connecting material, so that the connecting material reacts to generate a third silicon carbide layer to form the connecting member; wherein the crystal system of the third silicon carbide layer is the same as that of the first silicon carbide layer, or the crystal system of the third silicon carbide layer is the same as that of the second silicon carbide layer.

17. The manufacturing method according to claim 16, characterized in that: The thickness of the connecting material is 0.05 mm to 1 mm.

18. The manufacturing method according to claim 16, characterized in that: The temperature range of the first heat treatment is 900° C. to 2500° C.; the connection material includes at least one of carbon powder, silicon powder, silicon carbide powder, an organic binder, a silane precursor, and an organic solvent.

19. The manufacturing method according to claim 15, characterized in that: The forming of a connector between the first silicon carbide layer and the second silicon carbide layer comprises: stacking the first silicon carbide layer and the second silicon carbide layer so that the first silicon carbide layer is in contact with the second silicon carbide layer; A second heat treatment is performed on the stacked first silicon carbide layer and the second silicon carbide layer, so that the first silicon carbide layer diffuses toward the second silicon carbide layer to form a third silicon carbide layer, and the second silicon carbide layer diffuses toward the first silicon carbide layer to form a fourth silicon carbide layer, and the third silicon carbide layer and the fourth silicon carbide layer constitute the connecting member; wherein the crystal system of the third silicon carbide layer is the same as that of the first silicon carbide layer, and the crystal system of the fourth silicon carbide layer is the same as that of the second silicon carbide layer.

20. The manufacturing method according to claim 19, characterized in that: The temperature of the second heat treatment ranges from 1600°C to 2300°C.

21. The manufacturing method according to claim 15, characterized in that: The forming of a connector between the first silicon carbide layer and the second silicon carbide layer comprises: placing the first silicon carbide layer in a reaction chamber; Introducing a first reaction gas into the reaction chamber to deposit the connecting member on one side of the first silicon carbide layer; The forming of a second silicon carbide layer on one side of the first silicon carbide layer comprises: A second reaction gas is introduced into the reaction chamber to deposit the second silicon carbide layer on a side of the connector relatively away from the first silicon carbide layer; wherein the first reaction gas and the second reaction gas both include carbon and silicon, and a composition ratio of the carbon and silicon elements in the first reaction gas is greater than a composition ratio of the carbon and silicon elements in the second reaction gas.

22. The manufacturing method according to claim 21, characterized in that: The temperature range for depositing the connecting member and the second silicon carbide layer is 900° C. to 1500° C.; the first reaction gas and the second reaction gas include at least one of trichloromethylsilane, tetrachlorosilane, and alkane.

23. The manufacturing method according to claim 14, characterized in that: At least one of the first silicon carbide layer and the second silicon carbide layer is a recycled silicon carbide layer; and the manufacturing method further comprises: The recycled silicon carbide layer is subjected to surface pretreatment; wherein the surface pretreatment includes at least one of oxidation, cleaning, and grinding.

24. The manufacturing method according to claim 23, characterized in that: The surface roughness of the recovered silicon carbide layer after surface pretreatment is less than 0.5 μm, and the surface impurity content of the recovered silicon carbide layer after surface pretreatment is less than 0.1 ppm.

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