Intelligent power module

Abstract

The intelligent power module provided by the application is characterized in that first and second heat dissipation plates are arranged on two surfaces of the package body, and relevant circuits are arranged on the heat dissipation plates, so that the chips in the intelligent power module can be directly electrically connected based on the circuits on the heat dissipation plates, and thus the internal lead wires are not needed to be additionally arranged, the package structure is simplified, and the difficulty of the package process is reduced; meanwhile, the first and second heat dissipation plates are arranged on the two surfaces of the package body, and thus the heat dissipation capacity of the intelligent power module is improved.

Description

TECHNICAL FIELD

[0001] The present application relates to the field of electronic devices, in particular to an intelligent power module. BACKGROUND

[0002] Intelligent power module is an advanced power switching device, which is more and more widely used in the field of power electronics. The intelligent power module is based on the traditional power module, which integrates logic, control, detection and protection circuit inside, has the characteristics of high integration, high system reliability, simplifies the peripheral application circuit and is convenient to use.

[0003] The intelligent power module integrates the drive chip and the power chip inside, and the electrodes between the internal chips need to be connected by internal leads, which leads to a complex packaging structure and is not convenient for heat dissipation. SUMMARY

[0004] The main purpose of the present application is to provide an intelligent power module, which aims to solve the problem of complex packaging structure in the prior art.

[0005] To achieve the above purpose, the present application provides an intelligent power module, comprising:

[0006] The packaging body is provided with opposite first and second surfaces;

[0007] The first heat sink is arranged inside the packaging body and is attached to the first surface of the packaging body, and is provided with a signal circuit and a first power circuit;

[0008] The second heat sink is arranged inside the packaging body and is attached to the second surface of the packaging body, and is provided with a second power circuit;

[0009] A plurality of power chips and a plurality of drive chips are arranged according to a predetermined electrical connection relationship;

[0010] A plurality of pins;

[0011] The lead frame is arranged inside the packaging body, and the signal circuit of the first heat sink is connected to the front surface electrode which needs to be led out of the drive chip, the first power circuit of the first heat sink is connected to the front surface electrode which needs to be led out of the power chip, and the second power circuit of the second heat sink is connected to the back surface electrode which needs to be led out of the power chip;

[0012] The lead frame leads out the front surface electrode and the back surface electrode which need to be led out to the pins.

[0013] Optionally, the first heat dissipation plate comprises a first metal layer and a first insulating layer; a first surface of the first metal layer is attached to a first surface of the package, and the first insulating layer is arranged on a second surface of the first metal layer; wherein:

[0014] The first insulating layer is provided with a signal circuit and a first power circuit on a second surface of the package.

[0015] Optionally, a plurality of first pads and a plurality of second pads are arranged on the first insulating layer; the first pads are arranged corresponding to the front electrodes of the driving chip or the power chip, and the second pads are arranged corresponding to the pins of the lead frame; wherein:

[0016] A first conductive structure is arranged in the first insulating layer and connected with the first pads and the second pads; the first conductive structure is arranged based on the connection relationship between the front electrodes of the driving chip or the power chip and the pins of the lead frame, and constitutes the signal circuit and the first power circuit.

[0017] Insulating material is arranged between different pads.

[0018] Optionally, the second heat dissipation plate comprises a ceramic layer, a first copper layer and a second copper layer; the first copper layer is arranged on a second surface of the package, the first surface of the ceramic layer is attached to the first copper layer, and the second copper layer is arranged on a second surface of the ceramic layer; wherein:

[0019] The second power circuit is arranged on the second copper layer.

[0020] Optionally, the second copper layer comprises a plurality of copper pieces arranged without contact; wherein:

[0021] The projections of the back electrodes and the back pins of the lead frame having a predetermined connection relationship on the second copper layer are located on the same copper piece.

[0022] The back electrodes and the back pins of the lead frame having a predetermined connection relationship and located on the same copper piece have a predetermined connection relationship.

[0023] Optionally, a conductive overplating piece is arranged between the second copper layer and the back electrodes; wherein:

[0024] The conductive overplating piece is arranged one-to-one corresponding to the back electrodes, and the projections of the conductive overplating piece and the back electrodes on the second copper layer are the same.

[0025] Optionally, the lead frame comprises a plurality of back pins, and the back pins have a predetermined connection relationship with the back electrodes.

[0026] The reverse pin and the corresponding reverse electrode correspond to the copper sheet.

[0027] Optionally, the second heat sink comprises a second metal layer and a second insulating layer; a first surface of the second metal layer is attached to the second surface of the package, and the second insulating layer is arranged on a second surface of the second metal layer; wherein:

[0028] The second power circuit is arranged on the second insulating layer.

[0029] Optionally, the second insulating layer comprises a plurality of second conductive structures arranged without contact; the projections of the reverse electrode and the reverse pin of the lead frame on the second conductive structure have a predetermined connection relationship.

[0030] The reverse electrode and the reverse pin of the lead frame, whose projections are located on the same second conductive structure, have a predetermined connection relationship.

[0031] Optionally, the second conductive structure is provided with a plurality of third pads and fourth pads; wherein:

[0032] The third pad and the reverse electrode are arranged one by one, and the projection of the third pad on the second conductive structure contains the projection of the corresponding reverse electrode on the second conductive structure.

[0033] The fourth pad and the reverse pin are arranged one by one, and the projection of the fourth pad on the second conductive structure contains the projection of the corresponding reverse electrode on the reverse pin on the second conductive structure.

[0034] The intelligent power module comprises a package body provided with opposite first and second surfaces; a first heat sink provided inside the package body and attached to the first surface of the package body, and provided with a signal circuit and a first power circuit; a second heat sink provided inside the package body and attached to the second surface of the package body, and provided with a second power circuit; a plurality of power chips and a plurality of drive chips arranged in a predetermined electrical connection relationship; a plurality of pins; a lead frame provided inside the package body, and connected to the front electrodes of the drive chips and the power chips that need to be led out through the signal circuit of the first heat sink and the first power circuit of the first heat sink, and connected to the back electrodes of the power chips that need to be led out through the second power circuit of the second heat sink; and the lead frame leads out the front electrodes and the back electrodes that need to be led out to the pins. The first and second heat sinks are arranged on the two surfaces of the package body, and the related circuits are arranged on the heat sinks, so that the chips in the intelligent power module can directly complete electrical connection based on the circuits on the heat sinks, thereby eliminating the need for additional internal leads, simplifying the packaging structure, and reducing the difficulty of packaging process. Meanwhile, the first and second heat sinks are arranged on the two surfaces of the package body, thereby improving the heat dissipation capacity of the intelligent power module. BRIEF DESCRIPTION OF DRAWINGS

[0035] The accompanying drawings, which are incorporated into and form a part of the specification, illustrate embodiments consistent with the present application and, together with the description, serve to explain the principles of the application.

[0036] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the prior art, the following will briefly introduce the drawings needed to be used in the embodiments or prior art description. Obviously, for those skilled in the art, other drawings can also be obtained based on these drawings without any creative effort.

[0037] One or more embodiments are exemplarily illustrated by the pictures in the drawings corresponding thereto, and these exemplary illustrations do not constitute a limitation on the embodiments. Elements with the same reference numerals in the drawings represent similar elements, unless otherwise specified. The drawings in the drawings do not constitute a proportional limitation.

[0038] Figure 1 It is a front view of the first embodiment of the intelligent power module of the present application.

[0039] Figure 2 It is a side view of an embodiment of the intelligent power module of the present application.

[0040] Figure 3 It is a front view of the first heat sink in an embodiment of the intelligent power module of the present application.

[0041] Figure 4 For the intelligent power module of the present application based on Figure 3 Sectional view of A-A in the middle;

[0042] Figure 5 Front view of low-voltage driving chip in an embodiment of the intelligent power module of the present application;

[0043] Figure 6 Side view of low-voltage driving chip in an embodiment of the intelligent power module of the present application;

[0044] Figure 7 Front view of high-voltage driving chip in an embodiment of the intelligent power module of the present application;

[0045] Figure 8 Side view of high-voltage driving chip in an embodiment of the intelligent power module of the present application;

[0046] Figure 9 Front view of lead frame in an embodiment of the intelligent power module of the present application;

[0047] Figure 10 Side view of lead frame in an embodiment of the intelligent power module of the present application;

[0048] Figure 11 Front view of second heat sink in an embodiment of the intelligent power module of the present application;

[0049] Figure 12 Side view of second heat sink in an embodiment of the intelligent power module of the present application;

[0050] Figure 13 Rear view of second heat sink in an embodiment of the intelligent power module of the present application;

[0051] Figure 14 Front view of conductive overplating in an embodiment of the intelligent power module of the present application;

[0052] Figure 15 Side view of conductive overplating in an embodiment of the intelligent power module of the present application;

[0053] Figure 16 Side view of another embodiment of the intelligent power module of the present application;

[0054] Figure 17 Front view of second heat sink in another embodiment of the intelligent power module of the present application;

[0055] Figure 18 For the intelligent power module of the present application based on Figure 17 Sectional view of A-A in the middle;

[0056] Figure 19It is a back view of the overall appearance of the intelligent power module of the present application.

[0057] Figure 20 It is a side view of the overall appearance of the intelligent power module of the present application.

[0058] Figure 21 It is a front view of the overall appearance of the intelligent power module of the present application.

[0059] BRIEF DESCRIPTION OF DRAWINGS

[0060] Reference Name Reference Name 1 Package 342 Third pad 2 First heat sink 343 Fourth pad 21 First metal layer 4 Power chip 22 First insulating layer 4-1 IGBT power chip 221 First pad 4-2 FRD power chip 222 Second pad 5 Drive chip 223 First conductive structure 5-1 High-voltage drive chip 224 Insulating material 5-2 Low-voltage drive chip 3 Second heat sink 6 Pin 31 Ceramic layer 7 Lead frame 32A First copper layer 8 Conductive overplating sheet 32B Second copper layer 9 Solder tin 321 Copper sheet 10 Solder tin ball 33 Second metal layer 11 Fifth pad 34 Second insulating layer 341 Second conductive structure DETAILED DESCRIPTION

[0061] In order to make the objects, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be described clearly and completely below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments of the present application. Based on the embodiments in the present application, all other embodiments obtained by a person of ordinary skill in the art without creative work should belong to the scope of protection of the present application.

[0062] The following disclosure provides many different embodiments, or examples, for implementing different structures of the present application. For the purpose of simplifying the present application, components and settings of specific examples are described below. Of course, they are only examples, and the purpose is not to limit the present application. In addition, the present application can repeatedly refer to numbers and / or letters in different examples. Such repetition is for the purpose of simplification and clarity, and it does not indicate the relationship between the various embodiments and / or settings discussed.

[0063] It should be understood that the specific embodiments described herein are merely intended to explain the present application, and are not intended to limit the present application. In order to enable those skilled in the art to better understand the present application, the technical solutions in the embodiments of the present application will be described clearly and completely below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments of the present application. Based on the embodiments in the present application, all other embodiments obtained by a person of ordinary skill in the art without creative work should belong to the scope of protection of the present application.

[0064] The present application provides an intelligent power module, referring to Figure 1 and Figure 2 , Figure 1 It is a front view of the first embodiment of the intelligent power module of the present application, comprising:

[0065] The package 1 is provided with opposite first and second surfaces;

[0066] The first heat dissipation plate 2 is arranged in the package 1 and is attached to the first surface of the package 1, and is provided with a signal circuit and a first power circuit;

[0067] The second heat dissipation plate 3 is arranged in the package 1 and is attached to the second surface of the package 1, and is provided with a second power circuit;

[0068] A plurality of power chips 4 and a plurality of drive chips 5 are arranged in a predetermined electrical connection relationship;

[0069] A plurality of pins 6;

[0070] The lead frame 7 is arranged in the package 1, and is connected to the front electrodes of the signal circuit of the first heat dissipation plate 2 and the drive chip 5 that need to be led out, is connected to the front electrodes of the first power circuit of the first heat dissipation plate 2 and the power chip 4 that need to be led out, and is connected to the back electrodes of the second power circuit of the second heat dissipation plate 3 and the power chip 4 that need to be led out;

[0071] The lead frame 7 leads out the front electrodes and the back electrodes that need to be led out to the pins 6.

[0072] The front electrodes are the electrodes of the power chip 4 or the drive chip 5 that face the first surface of the package 1, and the back electrodes are the electrodes of the power chip 4 that face the second surface of the package 1. It can be understood that, based on the electrical connection relationship that needs to be established, some of the front electrodes and the back electrodes need to be led out to the pins, and some of the front electrodes and the back electrodes are used for internal connection. Therefore, the front electrodes or the back electrodes that need to be led out can be determined based on the actual chip arrangement needs.

[0073] The package 1 is injection molded, and the chips, the first heat dissipation plate 2, the second heat dissipation plate 3, the lead frame 7, etc. are wrapped together to protect the chips, the first heat dissipation plate 2, the second heat dissipation plate 3, the lead frame 7, etc. in the package 1. The material can be set based on actual needs, such as an epoxy resin made plastic encapsulation body.

[0074] The drive chip 5 and the power chip 4 can be specifically arranged in the intelligent power module, and the type and quantity of the specific chip can be set based on actual needs; for example, the drive chip 5 can be arranged as a low-voltage drive chip 5-2 and a high-voltage drive chip 5-1, the power chip 4 can be arranged as an IGBT (Insulate-Gate Bipolar Transistor, Insulated Gate Bipolar Transistor) power chip 4-1 and an FRD (Fast recovery diode, Fast Recovery Diode) power chip 4-2, the number of the IGBT power chip 4-1 is 6, and the number of the FRD power chip 4-2 is 6; wherein the IGBT chip and the FRD chip constitute a three-phase full-bridge circuit, the high-voltage drive chip 5-1 drives three high-side IGBT chips, and the low-voltage drive chip 5-2 drives three low-side IGBT chips.

[0075] It can be understood that based on the functional needs of the intelligent power module, an electrical connection relationship needs to be arranged between the chips, therefore, in the embodiment, the chips are arranged between the first heat sink 2 and the second heat sink 3, and at the same time, a signal circuit and a first power circuit are arranged on the first heat sink 2, and a second power circuit is arranged on the second heat sink 3.

[0076] The signal circuit is used to build an electrical connection between the drive chip 5 and other chips and between the drive chip 5 and the lead frame 7; the wiring and quantity of the specific signal circuit are set based on the actual needs of the drive chip 5.

[0077] The first power circuit is used to build an electrical connection between the front electrode of the power chip 4 and other chips and between the front electrode of the power chip 4 and the lead frame 7; it can be understood that the power chip 4 is provided with electrodes on both sides, in the existing inner lead scheme, the electrodes can be directly led out to the lead frame 7 through the inner lead, and after the inner lead is cancelled, the electrodes cannot be directly led out, therefore, in the embodiment, the electrical connection of the back electrode of the power chip 4 is built by arranging the second power circuit on the second heat sink 3.

[0078] In the embodiment, the functions of the original inner lead are realized by the signal circuit, the first power circuit arranged on the first heat sink 2, and the second power circuit arranged on the second heat sink 3; compared with the arrangement of the inner lead, the related circuits in the embodiment can be more conveniently arranged on the heat sink, at the same time, the internal structure is simplified, and the packaging efficiency can be improved.

[0079] The first heat sink 2 and the second heat sink 3 are made of materials with good heat dissipation capacity, and the specific materials can be set based on actual needs, such as metal and ceramic.

[0080] The first heat dissipation plate 2 and the second heat dissipation plate 3 are arranged on two sides of the packaging body 1 respectively, and the related circuit is further arranged on the heat dissipation plates, so that the chips in the intelligent power module can be directly electrically connected based on the circuit on the heat dissipation plate, thereby eliminating the need for additional internal leads, simplifying the packaging structure, and reducing the difficulty of the packaging process; meanwhile, the first heat dissipation plate 2 and the second heat dissipation plate 3 are arranged on two sides of the packaging body 1 respectively, so that the heat dissipation capacity of the intelligent power module can be improved.

[0081] Further, referring to Figure 3 、 Figure 4 The first heat dissipation plate 2 comprises a first metal layer 21 and a first insulating layer 22; the first metal layer 21 is arranged on the first side of the packaging body 1, and the first insulating layer 22 is arranged on the second side of the first metal layer 21; wherein:

[0082] The first insulating layer 22 is provided with a signal circuit and a first power circuit on the second side of the packaging body 1.

[0083] In the embodiment, the first heat dissipation plate 2 is composed of the first metal layer 21 and the first insulating layer 22.

[0084] The first metal layer 21 is made of metal, so it has good heat dissipation performance, and the specific type of metal can be set based on actual needs, such as aluminum or copper. It should be noted that at this time, the first metal layer 21 is part of the first side of the packaging body 1, which is exposed to the external environment, thereby improving the heat dissipation capacity.

[0085] It can be understood that the signal circuit and the first power circuit need to be arranged on the first heat dissipation plate 2, therefore, in order to realize the arrangement of the related circuit, the first insulating layer 22 is arranged on the first metal layer 21, so that the signal circuit and the first power circuit can be arranged on the first insulating layer 22; the first insulating layer 22 is made of insulating material, and the specific type of material can be set based on actual needs.

[0086] Further, a plurality of first pads 221 and a plurality of second pads 222 are arranged on the first insulating layer 22, the first pads 221 are arranged corresponding to the front electrodes of the drive chip 5 or the power chip 4, and the second pads 222 are arranged corresponding to the pins 6 of the lead frame 7; wherein:

[0087] The first conductive structure 223 is arranged in the first insulating layer 22 and connected with the first pads 221 and the second pads 222, and is arranged based on the connection relationship between the front electrodes of the drive chip 5 or the power chip 4 and the pins 6 of the lead frame 7, thereby constituting the signal circuit and the first power circuit.

[0088] Insulating material 224 is arranged between different pads.

[0089] It can be understood that the chip and the lead frame 7 need to be welded on the first heat sink 2; therefore, in the embodiment, pads are arranged for the positions of the chip and the pins 6 of the lead frame 7; specifically, the first pad 221 corresponds to the driving chip 5 or the power chip 4, and the second pad 222 corresponds to the pin 6 of the lead frame 7; meanwhile, the first conductive structure 223 is arranged between the pads based on the predetermined connection relationship between the front electrode of the chip and the pin 6 of the lead frame 7, so that after the driving chip 5, the power chip 4 and the lead frame 7 are welded on the first heat sink 2, the electrode of the driving chip 5, the front electrode of the power chip 4 and the pin 6 of the lead frame 7 achieve the predetermined connection relationship through the first conductive structure 223 based on the first conductive structure 223 arranged on the first heat sink 2.

[0090] Referring to Figures 4-10 When welding the chip, the lead frame 7 and the first heat sink 2, the fifth pad 11 can be arranged on the corresponding front electrode of the driving chip 5, and the solder ball 10 can be pre-welded in the fifth pad 11, so that the driving chip 5 can be flip-chip welded on the first insulating layer 22; for the power chip 4, flip-chip welding can be achieved by printing the tin paste on the corresponding first pad 221; for the lead frame 7, connection can be achieved by printing the second pad 222 on the first insulating layer 22 and the tin paste.

[0091] It can be understood that the first conductive structure 223 is composed of a conductor; when the first conductive structure 223 is arranged, the connection relationship between the electrodes or the pins 6 corresponding to any two pads is determined, and when the electrodes or the pins 6 corresponding to the two pads need to be connected based on the predetermined connection relationship, a communication path is arranged between the corresponding two pads through the conductor; meanwhile, the electrodes or the pins 6 without the predetermined connection relationship are independently insulated, so as to achieve the arrangement of the first conductive structure 223.

[0092] In order to further protect the electrodes or the pins 6 without the predetermined connection relationship to keep the insulation state, in the embodiment, the insulating material 224 is arranged between different pads to improve the insulation between the electrodes or the pins 6 or the first conductive structure 223 which need to be isolated.

[0093] Further, referring to Figures 11-13 The second heat sink 3 includes a ceramic layer 31, a first copper layer 32A and a second copper layer 32B; the first copper layer 32A is arranged on the second surface of the packaging body 1, the first surface of the ceramic layer 31 is arranged in close contact with the first copper layer 32A, and the second copper layer 32B is arranged on the second surface of the ceramic layer 31; wherein:

[0094] The second power circuit is arranged on the second copper layer 32B.

[0095] In the embodiment, the second heat dissipation plate 3 is composed of the ceramic layer 31, the first copper layer 32A and the second copper layer 32B, i.e. the second heat dissipation plate 3 is a ceramic copper clad plate; in other embodiments, the second copper layer 32B can also be arranged as an electrically conductive layer composed of other materials.

[0096] The material of the ceramic layer 31 is ceramic, thus having good heat dissipation performance; it should be noted that at this time, the first copper layer 32A as part of the second surface of the packaging body 1 is exposed to the external environment, thus improving the heat dissipation capacity.

[0097] It can be understood that ceramic, as an insulating material, can be used as the basis of circuit arrangement, thus in the embodiment, the second copper layer 32B is arranged on the ceramic layer 31, and the second power circuit is constructed by the second copper layer 32B; it can be understood that the second copper layer 32B is composed of copper, thus having electrically conductive capacity, which can meet the electrical connection needs between the backside electrode and the pin 6 of the lead frame 7.

[0098] Further, the second copper layer 32B has a plurality of copper pieces 321 arranged in mutual insulation; wherein:

[0099] The projections of the backside electrode and the backside pin 6 of the lead frame 7 on the second copper layer 32B, which have a predetermined connection relationship, are located on the same copper piece 321;

[0100] The backside electrode and the backside pin 6 of the lead frame 7, which have a predetermined connection relationship, have projections on the same copper piece 321.

[0101] The backside pin 6 is the pin 6 of the lead frame 7 that needs to establish an electrical connection relationship with the backside electrode.

[0102] It can be understood that the chip and the lead frame 7 need to be welded with the second heat dissipation plate 3, thus the projections of the backside electrode of the power chip 4 and the backside pin 6 of the lead frame 7 on the second copper layer 32B are the connection positions corresponding to the second copper layer 32B after welding; and the projections of the backside electrode and the backside pin 6 on the second copper layer 32B, which have a predetermined connection relationship, are located on the same copper piece 321, since the copper piece 321 has good electrical conductivity, thus after the chip and the lead frame 7 are welded, the backside electrode and the backside pin 6, which have a predetermined connection relationship, can realize electrical connection through the copper piece 321.

[0103] When the chip, the lead frame 7 and the second heat dissipation plate 3 are welded, the backside pin 6 can be connected through the tin paste printed on the second heat dissipation plate 3; and the backside pin 6 can be welded through solder.

[0104] And the projection of the back electrode of the same copper sheet 321 and the back pin 6 of the lead frame 7 has a predetermined connection relationship, so that after welding, the back electrode connected with the same copper sheet 321 and the back pin 6 need to be connected; At the same time, it is ensured that the back electrode and the back pin 6 without the predetermined connection relationship will be arranged on different copper sheets 321, thereby realizing mutual insulation.

[0105] It can be understood that the copper sheets 321 are arranged in insulation, so the back electrode and the back pin 6 connected with different copper sheets 321 do not have an electrical connection relationship.

[0106] Further, referring to Figure 2 , Figure 14 , Figure 15 , the second copper layer 32B and the back electrode are provided with a conductive overplating sheet 8; wherein:

[0107] The conductive overplating sheet 8 is arranged one-to-one with the back electrode, and the projection of the conductive overplating sheet 8 and the back electrode on the second copper layer 32B is the same.

[0108] It can be understood that the chip is welded with the first heat sink 2, and the first heat sink 2 is arranged on the first surface of the package 1, and the second heat sink 3 is arranged on the second surface of the package 1, so that there is a gap between the second copper layer 32B and the back electrode of the power chip 4, so that the copper sheet 321 and the back electrode of the power chip 4 cannot be directly welded; In order to realize the electrical connection between the copper sheet 321 and the back electrode, the conductive overplating sheet 8 is arranged in the embodiment; The conductive overplating sheet 8 can conduct electricity, so that the electrical connection between the copper sheet 321 and the back electrode can be realized through the conductive overplating sheet 8; The specific material of the conductive overplating sheet 8 can be set based on actual needs, such as molybdenum sheet.

[0109] In actual setting, the conductive overplating sheet 8 is welded with the back electrode through the tin solder 9, and the position of the corresponding copper sheet 321 is welded through the tin paste.

[0110] In order to ensure that the conductive overplating sheet 8 transmits electrical signals between the back electrode and the copper sheet 321, the projection of the conductive overplating sheet 8 on the second copper layer 32B is arranged to be the same as the back electrode, so that the conductive cross section is the same as the back electrode, and the conductive efficiency is ensured. In actual application, the projection of the conductive overplating sheet 8 on the second copper layer 32B can be set to contain the projection corresponding to the back electrode, or intersect with the projection corresponding to the back electrode.

[0111] Further, the lead frame 1 includes a plurality of back pins, and the back pin 6 has a predetermined connection relationship with the back electrode;

[0112] The reverse pin 6 and the corresponding copper sheet 321 corresponding to the corresponding reverse electrode are arranged in mutual adhesion.

[0113] It can be understood that the lead frame 7 is welded with the first heat sink 2, and the first heat sink 2 is arranged on the first surface of the package 1, and the second heat sink 3 is arranged on the second surface of the package 1, so that there is a gap between the second copper layer 32B and the reverse pin 6 of the lead frame 7, so that the copper sheet 321 and the reverse pin 6 cannot be directly welded; in order to realize the electrical connection between the copper sheet 321 and the reverse pin 6, the reverse pin 6 can be bent to make the reverse pin 6 connected with the copper sheet 321.

[0114] Further, participating Figures 16-18 , the second heat sink 3 includes a second metal layer 33 and a second insulating layer 34; the first surface of the second metal layer 33 is arranged in adhesion with the second surface of the package 1, and the second insulating layer 34 is arranged on the second surface of the second metal layer 33; wherein:

[0115] The second power circuit is arranged on the second insulating layer 34.

[0116] In this embodiment, the second heat sink 3 is composed of a second metal layer 33 and a second insulating layer 34.

[0117] The material of the second metal layer 33 is metal, so it has good heat dissipation performance, and the specific type of metal can be set based on actual needs, such as aluminum, copper.

[0118] It can be understood that the second power circuit needs to be arranged on the second heat sink 3, therefore, in order to realize the arrangement of the related circuit, the second insulating layer 34 is arranged on the second metal layer 33 in this embodiment, so that the second power circuit can be arranged on the second insulating layer 34; the second insulating layer 34 is made of insulating material, and the specific material type can be set based on actual needs.

[0119] Further, a plurality of second conductive structures 341 insulated from each other are arranged on the second insulating layer 34; the projections of the reverse electrode and the reverse pin 6 of the lead frame 7 having a predetermined connection relationship on the second conductive structure 341 are located in the same second conductive structure 341.

[0120] The reverse electrode and the reverse pin 6 of the lead frame 7 whose projections are located in the same second conductive structure 341 have a predetermined connection relationship.

[0121] It can be understood that the chip and the lead frame 7 need to be welded with the second heat sink 3, therefore, the projection of the backside electrode of the power chip 4 and the backside pin 6 of the lead frame 7 on the second copper layer 32B is the connection position corresponding to the second copper layer 32B after welding; and the projection of the backside electrode and the backside pin 6 with the predetermined connection relationship on the second copper layer 32B is located in the same second conductive structure 341, since the second conductive structure 341 has good conductivity, therefore, after the chip and the lead frame 7 are welded, the backside electrode and the backside pin 6 with the predetermined connection relationship can realize electrical connection through the second conductive structure 341; the specific material of the second conductive structure 341 can be set based on actual needs, such as copper.

[0122] And the backside electrode and the backside pin 6 of the lead frame 7 with the predetermined connection relationship have the same second conductive structure 341, so that after welding, the backside electrode and the backside pin 6 connected with the same second conductive structure 341 need to be connected; at the same time, it is ensured that the backside electrode and the backside pin 6 without the predetermined connection relationship will be arranged on different copper sheets 321 to realize mutual insulation.

[0123] It can be understood that the conductive structures are insulated, therefore, the backside electrode and the backside pin 6 connected with different second conductive structures 341 do not have an electrical connection relationship.

[0124] In order to further ensure the insulation between different second conductive structures 341, an insulating material 224 can be arranged in the gap between different second conductive structures 341.

[0125] Further, the second conductive structure 341 is provided with a plurality of third pads 342 and fourth pads 343; wherein:

[0126] The third pad 342 is arranged one by one corresponding to the backside electrode, and the projection of the third pad 342 on the second conductive structure 341 contains the projection of the corresponding backside electrode on the second conductive structure 341;

[0127] The fourth pad 343 is arranged one by one corresponding to the backside pin 6, and the projection of the fourth pad 343 on the second conductive structure 341 contains the projection of the corresponding backside electrode on the backside pin 6 on the second conductive structure 341.

[0128] It can be understood that the chip and the lead frame 7 need to be welded on the second heat sink 3; therefore, in this embodiment, pads are arranged for the positions of the backside electrode of the chip and the backside pin 6 of the lead frame 7; specifically, the third pad 342 corresponds to the backside electrode of the power chip 4, and the fourth pad 343 corresponds to the backside pin 6 of the lead frame 7.

[0129] It should be noted that, in order to ensure the welding between the reverse electrode and the reverse pin 6 and the second conductive structure 341, the conductive overplated sheet 8 can be arranged as in the foregoing embodiments, which will not be described here.

[0130] Participation Figures 19-21 In the overall manufacturing of the intelligent power module, the first heat sink 2, the drive chip 5, the power chip 4 and the lead frame 7 are welded to obtain a semi-finished product, then the second heat sink 3 and the conductive overplated sheet 8 are welded on the semi-finished product to complete the circuit connection of the product, and then the product is molded by the plastic sealing glue, and then electroplated, and finally the separation of the single intelligent power module product is completed through the rib cutting forming process.

[0131] In the present application, the terms "first", "second", "third", "fourth", "fifth" are only for the purpose of description, and cannot be understood as indicating or implying relative importance. For ordinary skilled in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances.

[0132] In the description of the present application, the description of the terms "one embodiment", "some embodiments", "example", "specific example" or "some examples" means that the specific features, structures, materials or characteristics described in connection with the embodiment or example are included in at least one embodiment or example of the present application. In the present application, the illustrative description of the above terms is not necessarily for the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in any one or more embodiments or examples in a suitable manner. In addition, the different embodiments or examples described in the present application and the features of the different embodiments or examples can be combined and combined by those skilled in the art without contradiction.

[0133] Although the embodiments of the present application have been shown and described above, the scope of protection of the present application is not limited thereto, and it can be understood that the above embodiments are exemplary and cannot be understood as limiting the present application. Those skilled in the art can make changes, modifications and replacements to the above embodiments within the scope of the present application, and these changes, modifications and replacements should be covered within the protection scope of the present application. Therefore, the protection scope of the present application should be subject to the protection scope of the claims.

Claims

1. An intelligent power module, characterized in that: include: The package body is provided with a first surface and a second surface opposite to each other; a first heat dissipation plate, attached to the first surface of the package body and disposed inside the package body, and provided with a signal circuit and a first power circuit; a second heat dissipation plate, attached to the second surface of the package body and arranged inside the package body, and provided with a second power circuit; A plurality of power chips and a plurality of driver chips arranged according to a predetermined electrical connection relationship; Several pins; a lead frame, disposed inside the package body, connected to the front electrode of the driver chip to be led out through the signal circuit of the first heat sink, connected to the front electrode of the power chip to be led out through the first power circuit of the first heat sink, and electrically connected to the back electrode of the power chip to be led out through the second power circuit of the second heat sink; A lead frame is used to lead the front electrode and the back electrode to the pins; The first heat sink includes a first metal layer and a first insulating layer; the first surface of the first metal layer is disposed in contact with the first surface of the package body, and the first insulating layer is disposed on the second surface of the first metal layer; wherein: The first insulating layer is provided with a signal circuit and a first power circuit on the second surface facing the package body; A plurality of first pads and a plurality of second pads are provided on the first insulating layer, the first pads are provided corresponding to the front electrodes of the driver chip or the power chip, and the second pads are provided corresponding to the pins of the lead frame; wherein: A first conductive structure is provided in the first insulating layer and is connected to the first pad and the second pad. The first conductive structure is provided based on the connection relationship between the front electrode of the driver chip or the power chip and the pin of the lead frame, constituting the signal circuit and the first power circuit. Insulating material is provided between different pads.

2. The intelligent power module according to claim 1, wherein: The second heat sink includes a ceramic layer, a first copper layer, and a second copper layer; the first copper layer is disposed on the second surface of the package body, the first surface of the ceramic layer is adhered to the first copper layer, and the second copper layer is disposed on the second surface of the ceramic layer; wherein: The second power circuit is disposed on the second copper layer.

3. The intelligent power module according to claim 2, wherein: The second copper layer includes a plurality of copper sheets arranged in a non-contact manner; wherein: The projections of the reverse electrodes and the reverse pins of the lead frame having a predetermined connection relationship on the second copper layer are located on the same copper sheet; The reverse electrode projected on the same copper sheet has a predetermined connection relationship with the reverse pin of the lead frame.

4. The intelligent power module according to claim 3, wherein: A conductive over-plating sheet is provided between the second copper layer and the reverse electrode; wherein: The conductive over-plating sheet and the reverse electrode are arranged in a one-to-one correspondence, and the projections of the conductive over-plating sheet and the reverse electrode on the second copper layer are the same.

5. The intelligent power module according to claim 3, wherein: The lead frame includes a plurality of reverse pins, and the reverse pins have a predetermined connection relationship with the reverse electrodes; The reverse pins and the copper sheets corresponding to the reverse electrodes are bonded to each other.

6. The intelligent power module according to claim 1, wherein: The second heat dissipation plate includes a second metal layer and a second insulating layer; the first surface of the second metal layer is arranged in contact with the second surface of the package body, and the second insulating layer is arranged on the second surface of the second metal layer; wherein: The second power circuit is disposed on the second insulating layer.

7. The intelligent power module according to claim 6, wherein: The second insulating layer includes a plurality of second conductive structures arranged in a non-contact manner; the projections of the reverse electrodes and the reverse pins of the lead frame having a predetermined connection relationship on the second conductive structure are located on the same second conductive structure; The reverse electrode projected on the same second conductive structure has a predetermined connection relationship with the reverse pin of the lead frame.

8. The intelligent power module according to claim 7, wherein: A plurality of third pads and fourth pads are provided on the second conductive structure; wherein: The third pads are arranged in a one-to-one correspondence with the reverse electrodes, and the projection of the third pads on the second conductive structure includes the projection of the corresponding reverse electrodes on the second conductive structure; The fourth pads are arranged in a one-to-one correspondence with the reverse pins, and the projection of the fourth pads on the second conductive structure includes the projection of the corresponding reverse electrode on the reverse pin on the second conductive structure.

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