Photovoltaic device applied to passive nerve stimulation regulation and control and preparation and control method

Abstract

The invention discloses a photovoltaic device applied to passive nerve stimulation regulation and a preparation and control method in the technical field of photovoltaic medical treatment, the photovoltaic device comprises a semiconductor film and a metal stimulation electrode, one end of the metal stimulation electrode is electrically connected with the semiconductor film, and the other end of the metal stimulation electrode is electrically connected with the semiconductor film. The other end of the metal stimulating electrode is a contact end which is in contact with an external object to be detected, an inner packaging layer is arranged outside the semiconductor film, and the inner packaging layer wraps the semiconductor film and the joint where the metal stimulating electrode is electrically connected with the semiconductor film; an outer packaging layer is further arranged outside the inner packaging layer, the contact end of the metal stimulating electrode penetrates out of the inner packaging layer and / or the outer packaging layer, and a light irradiation area corresponding to the semiconductor film is reserved on the outer packaging layer. The invention discloses a photovoltaic device applied to passive nerve stimulation regulation and a preparation and control method thereof. Optical signals with different frequencies can be converted into electric pulse signals through the photovoltaic effect of the photovoltaic device.

Description

Technical Field

[0001] The present invention relates to the field of photovoltaic medical technology, and in particular to a photovoltaic device used for passive nerve stimulation regulation and a preparation and control method thereof. Background Art

[0002] Parkinson's disease (PD) is a disease with movement disorders (reduced and slow movements, muscle rigidity, limb tremors, and abnormal posture and gait) as its main clinical symptoms and progressive loss of dopaminergic neurons in the substantia nigra and the formation of Lewy bodies as its main pathological features.

[0003] At present, the treatments for PD mainly include drug therapy, surgical treatment with deep brain stimulation (DBS) as the main method, as well as physical therapy and exercise therapy. As the disease progresses, the effect of drug treatment is not obvious, and dyskinesia, switching phenomenon, and end-of-dose phenomenon may also occur. DBS can significantly improve symptoms, reduce drug side effects, and has relatively stable long-term efficacy, but as an invasive treatment method, it has potential complications and high costs. In clinical studies, the use of DBS devices requires the subcutaneous implantation of batteries and stimulation controllers. There is a certain risk of inflammation and infection in this process, which may affect the patient's recovery and the effectiveness of the device. In addition, the replacement surgery of the DBS device battery also has potential complications, such as bleeding, infection, or nerve damage, which need to be fully evaluated and informed before surgery. Summary of the invention

[0004] The present invention overcomes the shortcomings of the prior art and provides a photovoltaic device and a preparation and control method for passive neural stimulation regulation. Through the photovoltaic effect of the photovoltaic device, light signals of different frequencies can be converted into electrical pulse signals; the electrical signal of the photovoltaic device is used to achieve membrane potential depolarization of the photovoltaic device through light regulation.

[0005] To achieve the above-mentioned purpose, the technical solution adopted by the present invention is: a photovoltaic device used for passive neural stimulation regulation, comprising: a semiconductor film and a metal stimulation electrode, one end of the metal stimulation electrode is electrically connected to the semiconductor film, and the other end of the metal stimulation electrode is a contact end in contact with an external object to be tested, an inner packaging layer is arranged outside the semiconductor film, the inner packaging layer wraps the semiconductor film, and the connection point where the metal stimulation electrode and the semiconductor film are electrically connected; an outer packaging layer is also arranged outside the inner packaging layer, and the contact end of the metal stimulation electrode passes through the inner packaging layer and / or the outer packaging layer, and a light irradiation area corresponding to the semiconductor film is reserved on the outer packaging layer.

[0006] In a preferred embodiment of the present invention, at least one pair of metal stimulation electrodes is electrically connected to the semiconductor film, and each pair of metal stimulation electrodes includes two metal wires with different work functions, and the two metal wires with different work functions are electrically connected to two sides of the semiconductor film respectively.

[0007] In a preferred embodiment of the present invention, a biocompatible polymer conductive material is disposed on the contact end of the metal stimulation electrode.

[0008] In a preferred embodiment of the present invention, the semiconductor film is a single crystal silicon wafer, and the metal stimulation electrode is connected to the semiconductor film by welding.

[0009] In a preferred embodiment of the present invention, the outer side surface of the silicon wafer of the semiconductor film serves as a receiving surface to receive light entering from the light irradiation area reserved on the outer packaging layer.

[0010] In a preferred embodiment of the present invention, the thickness of the semiconductor film is 200-300 microns.

[0011] In a preferred embodiment of the present invention, the inner encapsulation layer includes transparent parylene chemically vapor deposited on the outside of the semiconductor film, and the transparent parylene is coated on the outside of the semiconductor film.

[0012] In a preferred embodiment of the present invention, the outer packaging layer comprises a transparent plastic packaged above the inner packaging layer and an opaque plastic around the inner packaging layer; And / or, the polymer conductive material is PEDOT:PSS; And / or, the two metal wires with different work functions are an aluminum wire and a platinum wire.

[0013] In a preferred embodiment of the present invention, a method for preparing a photovoltaic device for passive neural stimulation regulation comprises the following steps: Step 1, preparing semiconductor thin films and metal stimulation electrodes; The preparation of the semiconductor film includes the following steps: soaking a p-type silicon wafer in an alkaline solution at a soaking temperature of 70-90°C for a soaking reaction time of 30-40 minutes; then taking out the p-type silicon wafer after alkaline soaking, washing it with deionized water, and then polishing it to obtain a silicon wafer with a thickness of 200-300 μm to obtain a semiconductor film; The preparation of metal stimulation electrodes includes the following steps: Obtain aluminum wire and platinum wire as metal wires, weld one end of the aluminum wire and the platinum wire to the two sides of the semiconductor film respectively, and coat the other end surfaces of the aluminum wire and the platinum wire with a polymer conductive material, so that the polymer conductive material forms a polymer conductive material film at the contact end of the aluminum wire and the platinum wire, and the polymer conductive material used is PEDOT:PSS; Step 2, packaging the semiconductor film welded with the metal stimulation electrode; the device packaging includes the following steps; A parylene film is conformally deposited on the surface of the semiconductor film by chemical vapor deposition to form an inner packaging layer on the outside of the semiconductor film; plastic packaging is performed outside the inner packaging layer on the outside of the semiconductor film, and a light irradiation area is reserved on the inner packaging layer corresponding to the outside of the semiconductor film during plastic packaging to obtain a planar photovoltaic device.

[0014] In a preferred embodiment of the present invention, a control method for a photovoltaic device applied to passive neural stimulation regulation comprises the following steps: The photovoltaic device is exposed to light of 100 Hz to 1000 Hz, and the intensity of the electrical signal generated by the photovoltaic device and the time when the electrical signal is generated are adjusted by changing the frequency of the light and the irradiation time; the electrical signal of the photovoltaic device regulated by light is used to achieve depolarization of the membrane potential of the photovoltaic device.

[0015] The present invention solves the defects existing in the technical background, and the beneficial technical effects of the present invention are: The present invention discloses a photovoltaic device for passive nerve stimulation regulation and a preparation and control method thereof, which converts light signals of different frequencies into electrical pulse signals through the photovoltaic effect of the photovoltaic device.

[0016] The intensity of the electrical signal generated by the photovoltaic device and the time of electrical signal generation are adjusted by changing the frequency and irradiation time of light; the electrical signal of the photovoltaic device regulated by light is used to achieve membrane potential depolarization of the photovoltaic device. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] The present invention is further described below in conjunction with the accompanying drawings and embodiments.

[0018] Figure 1 This is a physical picture of a silicon wafer after chemical wet thinning and polishing in a preferred embodiment of the present invention; Figure 2 is a SEM photograph of a metal wire coated with PEDOT:PSS in a preferred embodiment of the present invention; Figure 3 is a physical diagram of a photovoltaic device in a preferred embodiment of the present invention; Figure 4 is a schematic structural diagram of a photovoltaic device in a preferred embodiment of the present invention; Figure 5 This is a schematic diagram showing the variation of the output voltage of the photovoltaic device obtained in the fifth preferred embodiment of the present invention with the illumination frequency; Figure 6 This is a schematic diagram of the principle of photoelectric stimulation of primary mouse cortical neurons in the preferred embodiment 10 of the present invention; Figure 7It is a schematic diagram of the fluorescence changes of p-CaMKII in primary mouse cortical neurons induced by photoelectric stimulation under different parameters in the preferred embodiment 10 of the present invention; Figure 8 It is a schematic diagram of the statistical results of improving MPP+ inducing culture of primary mouse cortical neurons under different parameters of photoelectric stimulation in the preferred embodiment 10 of the present invention; Fig. 9 The photoelectric stimulation under different parameters in the preferred embodiment 10 of the present invention induces Ca in the neuron cell body 2+ Schematic diagram of concentration fluctuations; Fig.10 The photoelectric stimulation under different parameters in the preferred embodiment 10 of the present invention induces Ca in the neuron cell body 2+ Schematic diagram of statistical results of concentration; Fig.11 This is a schematic diagram of the morphology of primary neuron mitochondria that improve MPP+ damage after photoelectric stimulation in the preferred embodiment 10 of the present invention; Fig.12 This is a schematic diagram of the statistical results of primary neuron mitochondria that improve MPP+ damage after photoelectric stimulation in the preferred embodiment 10 of the present invention; Fig.13 This is a schematic diagram of the mitochondrial membrane potential of primary neurons that improves MPP+ damage after photoelectric stimulation in the preferred embodiment 10 of the present invention; Among them, 1-semiconductor film, 2-metal stimulation electrode, 21-contact end, 22-polymer conductive material, 23-welding point, 3-inner packaging layer, 4-outer packaging layer. DETAILED DESCRIPTION

[0019] The present invention will now be further described in detail with reference to the accompanying drawings and embodiments. These drawings are simplified schematic diagrams that only illustrate the basic structure of the present invention in a schematic manner, and therefore only show the components related to the present invention.

[0020] It should be noted that if there are directional indications (such as up, down, bottom, top, etc.) involved in the embodiments of the present invention, the directional indication is only used to explain the relative position relationship, movement, etc. between the components in a certain specific posture. If the specific posture changes, the directional indication will also change accordingly. The terms "first" and "second" are only used for descriptive purposes and cannot be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, the features defined as "first" and "second" may explicitly or implicitly include one or more of the features. Unless otherwise clearly specified and defined, the terms "set", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be directly connected, or indirectly connected through an intermediate medium, or it can be the internal connection of two components. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances. Embodiment 1

[0021] like Figure 1~Figure 4 As shown, a photovoltaic device used for passive neural stimulation regulation includes: a semiconductor film 1 and a metal stimulation electrode 2. The semiconductor film 1 is a single crystal silicon wafer. In this embodiment, the thickness of the semiconductor film 1 is 200-300 microns. The thickness of 200-300 microns can ensure the photoelectric conversion efficiency. In this embodiment, a semiconductor film 1 with a thickness of 300 microns is used. The semiconductor film 1 uses a thin film photoelectric material as a semiconductor layer, and is connected and assembled with the metal stimulation electrode 2 by electric welding.

[0022] Among them, at least one pair of metal stimulation electrodes 2 is electrically connected to the semiconductor film 1, and each pair of metal stimulation electrodes 2 includes two metal wires with different work functions, and the two metal wires with different work functions are electrically connected to the two sides of the semiconductor film 1 respectively. In this embodiment, a pair of metal stimulation electrodes 2 is electrically connected to the semiconductor film 1, and the two metal wires with different work functions are aluminum wire and platinum wire respectively. One end of the metal stimulation electrode 2 is electrically connected to the semiconductor film 1, and the metal stimulation electrode 2 is welded to the semiconductor film 1, and the other end of the metal stimulation electrode 2 is a contact end 21 that contacts the external object to be tested. Among them, a biocompatible polymer conductive material 22 is provided on the contact end 21 of the metal stimulation electrode 2. The polymer conductive material 22 adopts PEDOT:PSS.

[0023] The inner encapsulation layer 3 is disposed outside the semiconductor film 1, and the inner encapsulation layer 3 wraps the semiconductor film 1 and the welding point 23 where the metal stimulation electrode 2 and the semiconductor film 1 are electrically connected; in this embodiment, the inner encapsulation layer 3 includes transparent parylene chemically vapor deposited on the outside of the semiconductor film 1. The transparent parylene is coated on the outside of the semiconductor film 1.

[0024] Among them, an outer packaging layer 4 is also arranged outside the inner packaging layer 3, and the contact end 21 of the metal stimulation electrode 2 is arranged to pass through the inner packaging layer 3 and / or the outer packaging layer 4, and a light irradiation area corresponding to the semiconductor film 1 is reserved on the outer packaging layer 4. The outer side surface of the silicon wafer of the semiconductor film 1 serves as a receiving surface to receive light entering from the light irradiation area reserved on the outer packaging layer 4.

[0025] Working principle: The present invention discloses a photovoltaic device for passive neural stimulation regulation, which converts light signals of different frequencies into electrical pulse signals through the photovoltaic effect of the photovoltaic device. The intensity of the electrical signal generated by the photovoltaic device and the time of the electrical signal generation are adjusted by changing the frequency and irradiation time of the light; the neural electrical stimulation mediated by the photovoltaic effect can effectively improve the functional performance of neurons cultured in vitro.

[0026] Among them, the photovoltaic device used for passive neural stimulation regulation adopts a planar photovoltaic device structure composed of an asymmetric metal stimulation electrode 2, a semiconductor film, and an encapsulation layer. The two metal stimulation electrodes 2 have a large difference in work function and can form a large built-in electric field. The metal stimulation electrode 2 is coated with a polymer conductive material 22PEDOT:PSS film by dip coating to improve the biological safety of the electrode. The metal stimulation electrode 2 contacts both sides of the semiconductor film 1 by welding to form a photovoltaic device.

[0027] The device uses transparent parylene packaging deposited by chemical vapor deposition inside, which can ensure that devices with complex shapes can be completely conformally wrapped and extend the life of the device.

[0028] The electrical signal generated by the photovoltaic effect of the photovoltaic device is directly contacted to avoid the use of additional power supply and wires. By changing the intensity and frequency of light, the output voltage amplitude and frequency are controlled to achieve precise control of stimulation. Embodiment 2

[0029] Based on the first embodiment, Figure 1~Figure 4 As shown, the outer packaging layer 4 includes a transparent plastic packaged above the inner packaging layer 3 and an opaque plastic around it. The contact end 21 of the metal stimulation electrode 2 is arranged to pass through the inner packaging layer 3 and the outer packaging layer 4, and a light irradiation area corresponding to the semiconductor film 1 is reserved on the outer packaging layer 4. The outer side surface of the silicon wafer of the semiconductor film 1 serves as a receiving surface to receive light entering from the light irradiation area reserved on the outer packaging layer 4. Embodiment 3

[0030] Based on the first embodiment, a method for preparing a photovoltaic device for passive neural stimulation regulation includes the following steps: Step 1, preparing a semiconductor film 1 and a metal stimulation electrode 2.

[0031] The preparation of the semiconductor film 1 includes the following steps: obtaining a p-type silicon wafer, a 500 μm thick p-type silicon wafer, soaking the p-type silicon wafer in an alkaline solution, in this embodiment, the alkaline solution contains potassium hydroxide and sodium hydroxide, the soaking temperature is 70°C, and the soaking reaction time is 30 minutes; then taking out the p-type silicon wafer after alkaline soaking, rinsing it with deionized water to remove the residual alkaline solution and reaction products on the surface; then polishing to obtain a silicon wafer with a thickness of 300 μm to obtain a semiconductor film 1.

[0032] The preparation of the metal stimulation electrode 2 includes the following steps: Aluminum wire and platinum wire are obtained as metal wires, and one end of the aluminum wire and the platinum wire are welded to the two sides of the semiconductor film 1 respectively. In this embodiment, after the aluminum wire and the platinum wire are in close contact with the surface of the silicon wafer, the aluminum and the platinum wire are welded to the two sides of the silicon film at 300°C; the other end surfaces of the aluminum wire and the platinum wire are coated with a polymer conductive material 22, and the polymer conductive material 22 forms a polymer conductive material 22 film at the contact end 21 of the aluminum wire and the platinum wire. The polymer conductive material 22 is PEDOT:PSS. Further, in this embodiment, the surface of the metal stimulation electrode 2 is modified: the metal wire part of the bottom contact end 21 of the metal stimulation electrode 2 is immersed in a (poly(3,4-ethylenedioxythiophene):poly(4-styrenesulfonic acid)) (PEDOT:PSS) aqueous solution, and then pulled at a speed of 1μm / s to coat the surface of the metal wire with a layer of PEDOT:PSS film. In this embodiment, the (poly(3,4-ethylenedioxythiophene):poly(4-styrenesulfonic acid)) (PEDOT:PSS) aqueous solution adopts the PEDOT:PSS thin film coating in the prior art which is easy to prepare.

[0033] Step 2, packaging the semiconductor film 1 welded with the metal stimulation electrode 2; the device packaging includes the following steps.

[0034] A chemical vapor deposition method is used to conformally deposit a parylene film on the surface of the semiconductor film 1 to form an inner packaging layer 3 on the outside of the semiconductor film 1; plastic packaging is performed on the outside of the inner packaging layer 3 on the outside of the semiconductor film 1 to form an outer packaging layer 4. When the outer packaging layer 4 is plastic packaged, a light irradiation area is reserved on the inner packaging layer 3 on the outside of the semiconductor film 1 to obtain a planar photovoltaic device. The planar photovoltaic device can be applied to passive neural stimulation regulation. Embodiment 4

[0035] Based on the first embodiment, a method for preparing a photovoltaic device for passive neural stimulation regulation includes the following steps: Step 1, preparing a semiconductor film 1 and a metal stimulation electrode 2.

[0036] The preparation of the semiconductor film 1 includes the following steps: obtaining a p-type silicon wafer, a 500 μm thick p-type silicon wafer, soaking the p-type silicon wafer in an alkaline solution, in this embodiment, the alkaline solution contains potassium hydroxide and sodium hydroxide, the soaking temperature is 90°C, and the soaking reaction time is 40 minutes; then taking out the p-type silicon wafer after alkaline soaking, rinsing it with deionized water to remove the residual alkaline solution and reaction products on the surface; then polishing to obtain a silicon wafer with a thickness of 200 μm to obtain a semiconductor film 1.

[0037] The preparation of the metal stimulation electrode 2 includes the following steps: Aluminum wire and platinum wire are obtained as metal wires, and one end of the aluminum wire and the platinum wire are welded to the two sides of the semiconductor film 1 respectively. In this embodiment, after the aluminum wire and the platinum wire are in close contact with the surface of the silicon wafer, the aluminum and the platinum wire are welded to the two sides of the silicon film at 300°C; the other end surfaces of the aluminum wire and the platinum wire are coated with a polymer conductive material 22, and the polymer conductive material 22 forms a polymer conductive material 22 film at the contact end 21 of the aluminum wire and the platinum wire. The polymer conductive material 22 is PEDOT:PSS. Further, in this embodiment, the surface of the metal stimulation electrode 2 is modified: the metal wire part of the bottom contact end 21 of the metal stimulation electrode 2 is immersed in a (poly(3,4-ethylenedioxythiophene):poly(4-styrenesulfonic acid)) (PEDOT:PSS) aqueous solution, and then pulled at a speed of 5μm / s to coat the surface of the metal wire with a layer of PEDOT:PSS film. In this embodiment, the (poly(3,4-ethylenedioxythiophene):poly(4-styrenesulfonic acid)) (PEDOT:PSS) aqueous solution adopts the PEDOT:PSS thin film coating in the prior art which is easy to mix.

[0038] Step 2, packaging the semiconductor film 1 welded with the metal stimulation electrode 2; the device packaging includes the following steps.

[0039] A chemical vapor deposition method is used to conformally deposit a parylene film on the surface of the semiconductor film 1 to form an inner packaging layer 3 on the outside of the semiconductor film 1; plastic packaging is performed on the outside of the inner packaging layer 3 on the outside of the semiconductor film 1 to form an outer packaging layer 4. When the outer packaging layer 4 is plastic packaged, a light irradiation area is reserved on the inner packaging layer 3 on the outside of the semiconductor film 1 to obtain a planar photovoltaic device. The planar photovoltaic device can be applied to passive neural stimulation regulation. Embodiment 5

[0040] Based on the first embodiment, a method for preparing a photovoltaic device for passive neural stimulation regulation includes the following steps: Step 1, preparing a semiconductor film 1 and a metal stimulation electrode 2.

[0041] The preparation of the semiconductor film 1 includes the following steps: obtaining a p-type silicon wafer, a 500 μm thick p-type silicon wafer, soaking the p-type silicon wafer in an alkaline solution, in this embodiment, the alkaline solution contains potassium hydroxide and sodium hydroxide, the soaking temperature is 80°C, and the soaking reaction time is 35 minutes; then taking out the p-type silicon wafer after alkaline soaking, rinsing it with deionized water to remove the residual alkaline solution and reaction products on the surface; then polishing to obtain a silicon wafer with a thickness of 250 μm to obtain a semiconductor film 1.

[0042] The preparation of the metal stimulation electrode 2 includes the following steps: Aluminum wire and platinum wire are obtained as metal wires, and one end of the aluminum wire and the platinum wire are welded to the two sides of the semiconductor film 1 respectively. In this embodiment, after the aluminum wire and the platinum wire are in close contact with the surface of the silicon wafer, the aluminum and the platinum wire are welded to the two sides of the silicon film at 300°C; the other end surfaces of the aluminum wire and the platinum wire are coated with a polymer conductive material 22, and the polymer conductive material 22 forms a polymer conductive material 22 film at the contact end 21 of the aluminum wire and the platinum wire. The polymer conductive material 22 is PEDOT:PSS. Further, in this embodiment, the surface of the metal stimulation electrode 2 is modified: the metal wire part of the bottom contact end 21 of the metal stimulation electrode 2 is immersed in a (poly(3,4-ethylenedioxythiophene):poly(4-styrenesulfonic acid)) (PEDOT:PSS) aqueous solution, and then pulled at a speed of 3μm / s to coat the surface of the metal wire with a layer of PEDOT:PSS film. In this embodiment, the (poly(3,4-ethylenedioxythiophene):poly(4-styrenesulfonic acid)) (PEDOT:PSS) aqueous solution adopts the PEDOT:PSS thin film coating in the prior art which is easy to mix.

[0043] Step 2, packaging the semiconductor film 1 welded with the metal stimulation electrode 2; the device packaging includes the following steps.

[0044] A chemical vapor deposition method is used to conformally deposit a parylene film on the surface of the semiconductor film 1 to form an inner packaging layer 3 on the outside of the semiconductor film 1; plastic packaging is performed on the outside of the inner packaging layer 3 on the outside of the semiconductor film 1 to form an outer packaging layer 4. When the outer packaging layer 4 is plastic packaged, a light irradiation area is reserved on the inner packaging layer 3 on the outside of the semiconductor film 1 to obtain a planar photovoltaic device. The planar photovoltaic device can be applied to passive neural stimulation regulation.

[0045] The test results of the photoelectric conversion performance of the photovoltaic device prepared in this example for passive neural stimulation regulation are as follows: After the planar photovoltaic device was manufactured, the photoelectric conversion performance of the device was measured using an oscilloscope and signal transmission. Figure 5 As shown, it can be found that at a frequency of 200 Hz and a light intensity of 100 μW / cm 2Under the irradiation of light pulses, the device can output a voltage of about 0.6V, and the output voltage continues to decrease as the light radiation frequency is further increased. Within 200Hz, the device output voltage remains basically unchanged, and the size meets the needs of nerve stimulation.

[0046] Working principle: The present invention discloses a method for preparing a photovoltaic device for passive neural stimulation and regulation, which converts light signals of different frequencies into electrical pulse signals through the photovoltaic effect of the photovoltaic device. The intensity of the electrical signal generated by the photovoltaic device and the time of the electrical signal generation are adjusted by changing the frequency and irradiation time of the light; the neural electrical stimulation mediated by the photovoltaic effect can effectively improve the functional performance of neurons cultured in vitro.

[0047] The present invention belongs to a photovoltaic device for nerve regulation without power supply and power supply wires: The present invention proposes a novel photovoltaic device for nerve regulation without power supply and power supply wires. The device is based on the photovoltaic principle and can realize precise photovoltaic regulation of the nervous system.

[0048] The present invention has potential applications in a variety of neurological diseases: the photovoltaic device has broad application prospects through neural regulation and can be used to intervene in a variety of diseases characterized by movement disorders, providing a new research direction in the field of neuroscience.

[0049] The present invention significantly improves the symptoms of Parkinson's disease models: Preliminary experimental results show that this technology can significantly improve the motor symptoms of Parkinson's disease models, demonstrating its potential effectiveness in treating neurodegenerative diseases. Embodiment 6

[0050] Based on the second embodiment, a method for preparing a photovoltaic device for passive neural stimulation regulation includes the following steps: Step 1, preparing a semiconductor film 1 and a metal stimulation electrode 2; The preparation of the semiconductor film 1 includes the following steps: soaking a p-type silicon wafer in an alkaline solution at a soaking temperature of 70° C. for a soaking reaction time of 30 minutes; then taking out the p-type silicon wafer after the alkaline soaking, rinsing it with deionized water, and then polishing it to obtain a silicon wafer with a thickness of 300 μm, thereby obtaining a semiconductor film 1; The preparation of the metal stimulation electrode 2 includes the following steps: Aluminum wire and platinum wire are obtained as metal wires, one end of the aluminum wire and the platinum wire are respectively welded to the two sides of the semiconductor film 1, and the other end surfaces of the aluminum wire and the platinum wire are coated with polymer conductive material 22. The polymer conductive material 22 forms a polymer conductive material 22 film at the contact end 21 of the aluminum wire and the platinum wire. The polymer conductive material 22 is PEDOT:PSS.

[0051] Step 2, packaging the semiconductor film 1 welded with the metal stimulation electrode 2; the device packaging includes the following steps: A chemical vapor deposition method is used to conformally deposit a parylene film on the surface of the semiconductor film 1 to form an inner encapsulation layer 3 on the outside of the semiconductor film 1; plastic encapsulation is performed on the outside of the inner encapsulation layer 3 on the outside of the semiconductor film 1 to form an outer encapsulation layer 4, and the outer encapsulation layer 4 leaves a light irradiation area corresponding to the inner encapsulation layer 3 on the outside of the semiconductor film 1 during plastic encapsulation, so as to obtain a planar photovoltaic device, which can be used for passive neural stimulation regulation. Furthermore, the outer encapsulation layer 4 includes a transparent plastic encapsulated above the inner encapsulation layer 3 and an opaque plastic around it. The contact end 21 of the metal stimulation electrode 2 passes through the inner encapsulation layer 3 and the outer encapsulation layer 4, and a light irradiation area corresponding to the semiconductor film 1 is reserved on the outer encapsulation layer 4. The outer side surface of the silicon wafer of the semiconductor film 1 serves as a receiving surface to receive light entering from the light irradiation area reserved on the outer encapsulation layer 4. Embodiment 7

[0052] Based on the second embodiment, a method for preparing a photovoltaic device for passive neural stimulation regulation includes the following steps: Step 1, preparing a semiconductor film 1 and a metal stimulation electrode 2; The preparation of the semiconductor film 1 includes the following steps: soaking a p-type silicon wafer in an alkaline solution at a soaking temperature of 90° C. for a soaking reaction time of 40 minutes; then taking out the p-type silicon wafer after the alkaline soaking, washing it with deionized water, and then polishing it to obtain a silicon wafer with a thickness of 200 μm, thereby obtaining a semiconductor film 1; The preparation of the metal stimulation electrode 2 includes the following steps: Obtain an aluminum wire and a platinum wire as metal wires, weld one end of the aluminum wire and the platinum wire to the two sides of the semiconductor film 1 respectively, and coat the other end surfaces of the aluminum wire and the platinum wire with a polymer conductive material 22, so that the polymer conductive material 22 forms a polymer conductive material 22 film at the contact end 21 of the aluminum wire and the platinum wire, and the polymer conductive material 22 uses PEDOT:PSS; Step 2, packaging the semiconductor film 1 welded with the metal stimulation electrode 2; the device packaging includes the following steps: A chemical vapor deposition method is used to conformally deposit a parylene film on the surface of the semiconductor film 1 to form an inner encapsulation layer 3 on the outside of the semiconductor film 1; plastic encapsulation is performed on the outside of the inner encapsulation layer 3 on the outside of the semiconductor film 1 to form an outer encapsulation layer 4, and the outer encapsulation layer 4 leaves a light irradiation area corresponding to the inner encapsulation layer 3 on the outside of the semiconductor film 1 during plastic encapsulation, so as to obtain a planar photovoltaic device, which can be used for passive neural stimulation regulation. Furthermore, the outer encapsulation layer 4 includes a transparent plastic encapsulated above the inner encapsulation layer 3 and an opaque plastic around it. The contact end 21 of the metal stimulation electrode 2 passes through the inner encapsulation layer 3 and the outer encapsulation layer 4, and a light irradiation area corresponding to the semiconductor film 1 is reserved on the outer encapsulation layer 4. The outer side surface of the silicon wafer of the semiconductor film 1 serves as a receiving surface to receive light entering from the light irradiation area reserved on the outer encapsulation layer 4. Embodiment 8

[0053] Based on the second embodiment, a method for preparing a photovoltaic device for passive neural stimulation regulation includes the following steps: Step 1, preparing a semiconductor film 1 and a metal stimulation electrode 2; The preparation of the semiconductor film 1 includes the following steps: soaking a p-type silicon wafer in an alkaline solution at a soaking temperature of 80° C. for a soaking reaction time of 35 minutes; then taking out the p-type silicon wafer after the alkaline soaking, rinsing it with deionized water, and then polishing it to obtain a silicon wafer with a thickness of 250 μm, thereby obtaining the semiconductor film 1; The preparation of the metal stimulation electrode 2 includes the following steps: Obtain an aluminum wire and a platinum wire as metal wires, weld one end of the aluminum wire and the platinum wire to the two sides of the semiconductor film 1 respectively, and coat the other end surfaces of the aluminum wire and the platinum wire with a polymer conductive material 22, so that the polymer conductive material 22 forms a polymer conductive material 22 film at the contact end 21 of the aluminum wire and the platinum wire, and the polymer conductive material 22 uses PEDOT:PSS; Step 2, packaging the semiconductor film 1 welded with the metal stimulation electrode 2; the device packaging includes the following steps: A chemical vapor deposition method is used to conformally deposit a parylene film on the surface of the semiconductor film 1 to form an inner encapsulation layer 3 on the outside of the semiconductor film 1; plastic encapsulation is performed on the outside of the inner encapsulation layer 3 on the outside of the semiconductor film 1 to form an outer encapsulation layer 4, and the outer encapsulation layer 4 leaves a light irradiation area corresponding to the inner encapsulation layer 3 on the outside of the semiconductor film 1 during plastic encapsulation, so as to obtain a planar photovoltaic device, which can be used for passive neural stimulation regulation. Furthermore, the outer encapsulation layer 4 includes a transparent plastic encapsulated above the inner encapsulation layer 3 and an opaque plastic around it. The contact end 21 of the metal stimulation electrode 2 passes through the inner encapsulation layer 3 and the outer encapsulation layer 4, and a light irradiation area corresponding to the semiconductor film 1 is reserved on the outer encapsulation layer 4. The outer side surface of the silicon wafer of the semiconductor film 1 serves as a receiving surface to receive light entering from the light irradiation area reserved on the outer encapsulation layer 4.

[0054] Working principle: The present invention discloses a method for preparing a photovoltaic device for passive nerve stimulation regulation, which converts light signals of different frequencies into electric pulse signals through the photovoltaic effect of the photovoltaic device. The intensity of the electric signal generated by the photovoltaic device and the time of electric signal generation are adjusted by changing the frequency and irradiation time of light; the electric signal of the photovoltaic device is regulated by light to achieve membrane potential depolarization of the photovoltaic device.

[0055] The present invention belongs to a photovoltaic device for nerve regulation without power supply and power supply wires: The present invention proposes a novel photovoltaic device for nerve regulation without power supply and power supply wires. The device is based on the photovoltaic principle and can realize precise photovoltaic regulation of the nervous system.

[0056] The present invention has potential applications in a variety of neurological diseases: the photovoltaic device has broad application prospects through neural regulation and can be used to intervene in a variety of diseases characterized by movement disorders, providing a new research direction in the field of neuroscience.

[0057] The present invention significantly improves the symptoms of Parkinson's disease models: Preliminary experimental results show that this technology can significantly improve the motor symptoms of Parkinson's disease models, demonstrating its potential effectiveness in treating neurodegenerative diseases. Embodiment 9

[0058] Based on the first embodiment, a control method for a photovoltaic device applied to passive neural stimulation regulation includes the following steps: By applying 100Hz~1000Hz light to the photovoltaic device, the intensity of the electrical signal generated by the photovoltaic device and the time of electrical signal generation can be adjusted by changing the frequency of light and the irradiation time; neural electrical stimulation mediated by the photovoltaic effect can effectively improve the functional performance of neurons cultured in vitro.

[0059] Working principle: The present invention provides a control method for a photovoltaic device used for passive neural stimulation regulation, which converts light signals of different frequencies into electrical pulse signals through the photovoltaic effect of the photovoltaic device. The intensity of the electrical signal generated by the photovoltaic device and the time of the electrical signal generation are adjusted by changing the frequency and irradiation time of the light; the neural electrical stimulation mediated by the photovoltaic effect can effectively improve the functional performance of neurons cultured in vitro. Embodiment 10

[0060] On the basis of Example 1, the present invention uses photoelectric stimulation as a neural stimulation regulation technology, which has significant advantages such as controllability and minimally invasiveness. Compared with traditional electrical stimulation methods, photoelectric stimulation activates neural tissue through an external light source, avoids the risks of surgical trauma, inflammation, infection, etc. caused by electrode implantation, and eliminates the limitations of physical connection of electrodes in traditional electrical stimulation. This makes photoelectric stimulation excellent in reducing patient treatment risks and postoperative recovery time. In addition, photoelectric stimulation technology also has extremely high precision and flexibility. By adjusting the intensity, frequency and wavelength of the light source, the temporal and spatial distribution of the stimulation can be accurately controlled, thereby achieving fine adjustment of specific neural areas or neuronal populations. This high-precision control capability enables photoelectric stimulation to achieve localized and differentiated treatment without inducing widespread stimulation, avoiding the non-specific stimulation effects that may be produced by traditional electrical stimulation, and significantly improving the pertinence and safety of treatment. More importantly, photoelectric stimulation has lower biological reactivity and higher stability. Compared with traditional electrical stimulation, photoelectric stimulation avoids problems such as electrochemical reactions or electrode corrosion, and shows superior durability, especially in the long-term use process. More safe. Therefore, photoelectric stimulation has broad application prospects in the treatment of neurological diseases, especially in terms of precise treatment and safety.

[0061] The present invention can be used for diseases related to nerve damage, movement disorders, and abnormal neuronal excitability. It is a technical method that can improve disease-related symptoms by changing the intensity and frequency of light radiation.

[0062] Specifically, take the cell model of the neurodegenerative disease Parkinson's disease as an example: like Figure 6-Figure 10 As shown, primary mouse cortical neurons were cultured for 12 days and MPP was added + Inducing cell damage, the photovoltaic device was given 100Hz or 1000Hz light stimulation for 10min, and immunofluorescence staining showed that the p-CaMKII fluorescence intensity changed significantly (such as Figure 7 ), schematic diagram of the statistical results of photoelectric stimulation under different parameters to improve MPP+ induced culture of primary mouse cortical neurons (as shown in Figure 8 ) through living cell Ca 2+Observation: Photoelectric stimulation under different parameters induces Ca2+ in neuronal cells 2+ Fluctuations in concentration (e.g. Fig. 9 ), photoelectric stimulation under different parameters induces Ca 2+ Statistical results of concentration (such as Fig.10 The results show that the photovoltaic device can significantly improve the depolarization of the membrane potential when neurons are stimulated by light, leading to the opening of voltage-dependent calcium channels, Ca 2+ Inflow phenomenon, protect MPP + Induced cell damage.

[0063] like Figure 11-13 As shown, the changes in mitochondria were detected by mitochondrial probe, MPP + The mitochondrial morphology of primary cortical neurons treated with photoelectric stimulation of different parameters was changed (e.g. Fig.11 , Fig.12 As shown in the figure, the mitochondria in the cell injury group were swollen, the mitochondria became larger and rounder, and the matrix became shallower. After 100Hz or 1000Hz light stimulation from the photovoltaic device for 10 minutes, the mitochondrial swelling recovered and the matrix became darker. The JC-1 test results showed that the mitochondrial membrane potential in the stimulation group increased and the mitochondria returned to normal (as shown in the figure). Fig.13 as shown).

[0064] Working principle: The present invention discloses a photovoltaic device for passive nerve stimulation regulation and a preparation and control method. Through the photovoltaic effect of the photovoltaic device, light signals of different frequencies are converted into electric pulse signals. The intensity of the electric signal generated by the photovoltaic device and the time of electric signal generation are adjusted by changing the frequency and irradiation time of light; the electric signal of the photovoltaic device is regulated by light to achieve membrane potential depolarization of the photovoltaic device. No external power supply is required to achieve the generation of electric pulse signals. The photovoltaic device with nerve stimulation pulse regulation function provides a convenient, small, wireless and controllable method for the treatment of neurological diseases such as Parkinson's disease.

[0065] The above specific implementation methods are specific support for the scheme ideas proposed in the present invention, and cannot be used to limit the protection scope of the present invention. Any equivalent changes or equivalent modifications made on the basis of this technical scheme in accordance with the technical ideas proposed in the present invention still fall within the scope of protection of the technical scheme of the present invention.

Claims

1. A photovoltaic device for passive neural stimulation regulation, characterized in that: include: A semiconductor film and a metal stimulation electrode, one end of the metal stimulation electrode is electrically connected to the semiconductor film, and the other end of the metal stimulation electrode is a contact end in contact with an external object to be tested. An inner packaging layer is arranged outside the semiconductor film, and the inner packaging layer wraps the semiconductor film and the connection point where the metal stimulation electrode and the semiconductor film are electrically connected; an outer packaging layer is also arranged outside the inner packaging layer, and the contact end of the metal stimulation electrode passes through the inner packaging layer and / or the outer packaging layer, and a light irradiation area corresponding to the semiconductor film is reserved on the outer packaging layer.

2. The photovoltaic device for passive neural stimulation control according to claim 1, characterized in that: At least one pair of metal stimulation electrodes is electrically connected to the semiconductor film. Each pair of metal stimulation electrodes includes two metal wires with different work functions. The two metal wires with different work functions are electrically connected to two sides of the semiconductor film respectively.

3. The photovoltaic device for passive neural stimulation control according to claim 2, characterized in that: The contact end of the metal stimulation electrode is provided with a biocompatible polymer conductive material.

4. The photovoltaic device for passive neural stimulation control according to claim 3, characterized in that: The semiconductor film is a single crystal silicon wafer, and the metal stimulation electrode is welded and connected to the semiconductor film.

5. The photovoltaic device for passive neural stimulation control according to claim 4, characterized in that: The outer side surface of the silicon wafer of the semiconductor film serves as a receiving surface to receive light entering from the light irradiation area reserved on the outer packaging layer.

6. The photovoltaic device for passive neural stimulation control according to claim 5, characterized in that: The thickness of the semiconductor film is 200-300 μm.

7. The photovoltaic device for passive neural stimulation control according to claim 6, characterized in that: The inner encapsulation layer includes transparent parylene chemically vapor deposited on the outside of the semiconductor film, and the transparent parylene covers the outside of the semiconductor film.

8. The photovoltaic device for passive neural stimulation control according to claim 7, characterized in that: The outer packaging layer includes a transparent plastic packaged above the inner packaging layer and an opaque plastic around the inner packaging layer; And / or, the polymer conductive material is PEDOT:PSS; And / or, the two metal wires with different work functions are an aluminum wire and a platinum wire.

9. A method for preparing a photovoltaic device for passive neural stimulation regulation, characterized in that: A method for preparing a photovoltaic device for passive neural stimulation regulation according to any one of claims 1 to 8, the method comprising the following steps: Step 1, preparing semiconductor thin films and metal stimulation electrodes; The preparation of the semiconductor film comprises the following steps: soaking a p-type silicon wafer in an alkaline solution at a soaking temperature of 70-90°C for a soaking reaction time of 30-40 minutes; then taking out the p-type silicon wafer after alkaline soaking, washing it with deionized water, and then polishing it to obtain a silicon wafer with a thickness of 200-300 μm to obtain a semiconductor film; The preparation of metal stimulation electrodes includes the following steps: Obtaining aluminum wire and platinum wire as metal wires, welding one end of the aluminum wire and the platinum wire to two sides of the semiconductor film respectively, coating the other end surfaces of the aluminum wire and the platinum wire with a polymer conductive material, wherein the polymer conductive material forms a polymer conductive material film at the contact end of the aluminum wire and the platinum wire, and the polymer conductive material is PEDOT:PSS; Step 2, packaging the semiconductor film welded with the metal stimulation electrode; the device packaging includes the following steps: A parylene film is conformally deposited on the surface of the semiconductor film by chemical vapor deposition to form an inner packaging layer on the outside of the semiconductor film; plastic packaging is performed outside the inner packaging layer on the outside of the semiconductor film, and a light irradiation area is reserved on the inner packaging layer corresponding to the outside of the semiconductor film during plastic packaging to obtain a planar photovoltaic device.

10. A control method for a photovoltaic device for passive neural stimulation regulation, characterized in that: A control method for controlling a photovoltaic device for passive neural stimulation regulation as described in any one of claims 1 to 8, comprising the following steps: applying light of 100 Hz to 1000 Hz to the photovoltaic device, and adjusting the intensity of the electric signal generated by the photovoltaic device and the time when the electric signal is generated by the photovoltaic device by changing the frequency and irradiation time of the light; and controlling the electric signal of the photovoltaic device by light to achieve depolarization of the membrane potential of the photovoltaic device.

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