Display substrate and preparation method thereof, display panel and mask

Abstract

The invention discloses a display substrate and a preparation method thereof, a display panel and a mask plate, and relates to the technical field of display, and the display substrate comprises a substrate (1) and an organic structure located on the substrate (1); the organic structure comprises a first surface (M1), and the first surface (M1) is arranged far away from the substrate (1); in the direction perpendicular to the plane where the substrate (1) is located, the difference between the maximum distance between the first surface (M1) and the substrate (1) and the minimum distance between the first surface (M1) and the substrate (1) is smaller than or equal to 0.06 [mu] m. The first surface (M1) of the organic structure on the display substrate has high flatness, and the difference between the maximum distance between the first surface (M1) and the substrate (1) and the minimum distance between the first surface (M1) and the substrate (1) is smaller than or equal to 0.06 [mu] m, so that the organic structure can play a good supporting role under the condition that a display panel prepared by the display substrate is pressed.

Description

Display substrate and manufacturing method thereof, display panel and mask Technical Field

[0001] The present application relates to the field of display technology, and in particular to a display substrate and a preparation method thereof, a display panel and a mask. Background Art

[0002] A mask is a graphic master used in the field of photolithography. The pattern of the mask is transferred to the corresponding product carrier during the exposure process.

[0003] In the related art, a half-tone mask is often used to simultaneously produce a main spacer (Main PS) and a sub-spacer (Sub PS) to reduce the process flow, wherein the main spacer is produced using a full-tone pattern in the half-tone mask, and the sub-spacer is produced using a half-tone pattern in the half-tone mask to form a step difference between the main spacer and the sub-spacer; however, the flatness of the upper surface of the spacer in the related art is low, which reduces the supporting function of the spacer.

[0004] Summary of the Invention

[0005] The embodiments of this application adopt the following technical solutions:

[0006] In a first aspect, at least one embodiment of the present application provides a display substrate, comprising:

[0007] a substrate and an organic structure located on the substrate;

[0008] The organic structure includes a first surface, the first surface being disposed away from the substrate;

[0009] In a direction perpendicular to a plane where the substrate is located, a difference between a maximum distance between the first surface and the substrate and a minimum distance between the first surface and the substrate is less than or equal to 0.06 μm.

[0010] In at least one embodiment of the present application, in a direction perpendicular to the plane of the substrate, the distance between the geometric center of the first surface and the substrate is greater than or equal to the average distance between each point on the first surface and the substrate.

[0011] In at least one embodiment of the present application, the organic structure includes a spacer, and a surface of the spacer away from the substrate is the first surface.

[0012] In at least one embodiment of the present application, the organic structure includes a color filter pattern, the display substrate includes a display area and a peripheral area surrounding the display area, and the size of a portion of the color filter pattern located in the peripheral area in a direction perpendicular to the plane of the substrate is less than or equal to the size of a portion of the color filter pattern located in the display area in a direction perpendicular to the plane of the substrate;

[0013] The surface of the peripheral area where the color filter pattern and the adjacent color filter pattern do not overlap each other and is away from the substrate is the first surface.

[0014] In at least one embodiment of the present application, a plurality of protrusions and a plurality of recesses are provided on the first surface, and the recesses are located between at least two of the protrusions; and the protrusion is provided at the geometric center of the first surface.

[0015] In at least one embodiment of the present application, the organic structure includes a first cross-section, the first cross-section being a cross-section along a direction perpendicular to the plane of the substrate, and an intersection line between the first cross-section and the first surface is parallel to a side edge of the first surface;

[0016] The number of the protrusions provided at the intersection line between the first surface and the first cross section is an odd number.

[0017] In at least one embodiment of the present application, the organic structure includes a first cross-section, the first cross-section being a cross-section along a direction perpendicular to the plane of the substrate, and an intersection line between the first cross-section and the first surface passes through a geometric center of the first surface;

[0018] The number of the protrusions provided at the intersection line between the first surface and the first cross section is an odd number.

[0019] In at least one embodiment of the present application, the orthographic projection of the first surface on the substrate is a quadrilateral;

[0020] An intersection line between the first surface and the first cross section is parallel to a diagonal line of the quadrilateral;

[0021] Alternatively, an intersection line between the first surface and the first cross section is parallel to a side of the quadrilateral.

[0022] In at least one embodiment of the present application, the first surface includes a middle area and an edge area surrounding the middle area, and the geometric center of the first surface is located in the middle area;

[0023] The maximum distance between the portion of the protrusion located in the middle region and the substrate is greater than or equal to the maximum distance between the portion of the protrusion located in the edge region and the substrate.

[0024] In at least one embodiment of the present application, a plurality of protrusions are provided at the outer contour position of the first surface, and the maximum distance between the portion of the protrusion located at the outer contour position of the first surface and the substrate is less than or equal to the maximum distance between each other protrusion and the substrate.

[0025] In at least one embodiment of the present application, the first surface includes a middle area and an edge area surrounding the middle area, and the geometric center of the first surface is located in the middle area;

[0026] The curvature radius of the portion of the protrusion located in the middle area is smaller than or equal to the curvature radius of the portion of the protrusion located in the edge area.

[0027] In at least one embodiment of the present application, when the organic structure includes a spacer, the spacer includes a side surface, the side surface is a curved surface, and an intersection line between the side surface and the first cross section is an arc line.

[0028] In at least one embodiment of the present application, the curvature radius of the arc gradually decreases in a direction away from the substrate.

[0029] In at least one embodiment of the present application, when the organic structure includes the spacer, the distance between the vertices of two adjacent protrusions in a direction parallel to the plane of the substrate is equal to 1 / 2 to 1 / 6 of the size of the planar figure of the spacer along a preset direction, wherein the preset direction is the direction in which one of the two adjacent protrusions points to the other protrusion.

[0030] In at least one embodiment of the present application, the number of the pits provided at the intersection line of the first surface and the first cross section is an even number, and the number of the protrusions is greater than the number of the pits.

[0031] In at least one embodiment of the present application, the number of the protrusions provided at the intersection line of the first surface and the first cross section is any one of 3, 5 and 7.

[0032] In at least one embodiment of the present application, along a direction perpendicular to the plane of the substrate, a standard deviation of three times the size of the organic structure along the direction perpendicular to the plane of the substrate is less than or equal to 0.2 μm.

[0033] In a second aspect, an embodiment of the present application provides a display panel comprising a display substrate as described in any one of the first aspects.

[0034] In a third aspect, an embodiment of the present application provides a mask plate for preparing a display substrate as described in any one of the first aspects, wherein the mask plate includes a plurality of first slits, wherein the first slits are provided with a plurality of first light-blocking strips arranged along the same direction and a plurality of second light-blocking strips arranged along the same direction, wherein the first light-blocking strips intersect with at least one of the second light-blocking strips, and the planar figure of the pattern within the first slit is a mirror-symmetrical figure.

[0035] In at least one embodiment of the present application, the number of the first light-blocking bars and the number of the second light-blocking bars are the same.

[0036] In at least one embodiment of the present application, the first light-blocking bar and the second light-blocking bar are vertically arranged.

[0037] In at least one embodiment of the present application, the minimum distance between two adjacent first light-blocking bars is equal to the minimum distance between two adjacent second light-blocking bars, and the minimum distance between two adjacent first light-blocking bars is greater than the width of the first light-blocking bar.

[0038] In at least one embodiment of the present application, the first light-blocking bar and the second light-blocking bar have the same structure and size, any first light-blocking bar intersects with each of the second light-blocking bars, and any second light-blocking bar intersects with each of the first light-blocking bars.

[0039] In at least one embodiment of the present application, the first light-blocking strips include a first group, a second group, and a third group, and the second light-blocking strips include a first group, a second group, and a third group;

[0040] The first group of the first light-blocking bars and the second group of the first light-blocking bars each include two first light-blocking bars, the first group of the second light-blocking bars and the second group of the second light-blocking bars each include two second light-blocking bars, the third group of the first light-blocking bars includes one first light-blocking bar, and the third group of the second light-blocking bars includes one second light-blocking bar;

[0041] The first light-blocking strips of the first group and the second light-blocking strips of the first group intersect to form a first closed ring, the first light-blocking strips of the second group and the second light-blocking strips of the second group intersect to form a second closed ring, the second closed ring is located inside the first closed ring, the first light-blocking strips of the third group and the second light-blocking strips of the third group intersect, and both intersect with the first closed ring and the second closed ring respectively, and the geometric center of the mask is located at the intersection of the first light-blocking strips of the third group and the second light-blocking strips of the third group.

[0042] In at least one embodiment of the present application, the minimum distance between two adjacent first light-blocking strips ranges from 2.5 μm to 14 μm, and the width of the first light-blocking strips ranges from 1 μm to 4 μm.

[0043] In a fourth aspect, an embodiment of the present application provides a method for preparing a display substrate, the method comprising:

[0044] providing a substrate;

[0045] forming a thin film of a spacer material;

[0046] The spacer material film is patterned using a mask as described in the first aspect to obtain a spacer; wherein the spacer includes a first surface, the first surface is arranged away from the substrate, and a plurality of protrusions and a plurality of pits are arranged on the first surface, and the pits are located between at least two of the protrusions; wherein the protrusion is arranged at the geometric center position of the first surface; in a direction perpendicular to the plane where the substrate is located, the difference between the maximum distance between the first surface and the substrate and the minimum distance between the first surface and the substrate is less than or equal to 0.06μm.

[0047] In at least one embodiment of the present application, the step of patterning the spacer material film using a mask described in the first aspect to obtain the spacer includes:

[0048] Determining a preset height and a preset plane size of the spacer;

[0049] Determining two of three parameters of the mask: the number of the first light-blocking bars, the width of the first light-blocking bars, and the minimum spacing between two adjacent first light-blocking bars; wherein the number of the first light-blocking bars is the same as the number of the second light-blocking bars, the width of the first light-blocking bars is the same as the width of the second light-blocking bars, and the minimum spacing between two adjacent first light-blocking bars is the same as the minimum spacing between two adjacent second light-blocking bars;

[0050] Obtaining a preset relationship between unknown parameters among three parameters, namely, the number of the first light-blocking strips, the width of the first light-blocking strips, and the minimum distance between two adjacent first light-blocking strips, and the size parameters of the spacers;

[0051] Determining unknown parameters of the mask according to the size parameters of the spacer and the preset relationship;

[0052] The specifications of the mask are determined according to the three parameters of the mask, and the spacer material film is patterned using the mask to obtain the spacer.

[0053] In at least one embodiment of the present application, the step of determining two of the three parameters of the number of the first light-blocking strips, the width of the first light-blocking strips, and the minimum spacing between two adjacent first light-blocking strips in the mask includes:

[0054] The number and width of the first light-blocking strips in the mask are determined.

[0055] In at least one embodiment of the present application, the step of obtaining a preset relationship between an unknown parameter among the three parameters of the number of the first light-blocking strips, the width of the first light-blocking strips, and the minimum spacing between two adjacent first light-blocking strips and the size parameter of the spacer includes:

[0056] The preset relationship between the minimum spacing between two adjacent first light-blocking strips and the size parameters of the spacers is obtained; wherein the size parameters include height and plane size.

[0057] In at least one embodiment of the present application, the height of the spacer decreases as the minimum spacing between two adjacent first light-blocking strips increases, and the planar size of the spacer increases as the minimum spacing between two adjacent first light-blocking strips increases; the minimum spacing between two adjacent first light-blocking strips is the same as the minimum spacing between two adjacent second light-blocking strips.

[0058] In at least one embodiment of the present application, the planar dimensions of the spacer include dimensions in a first direction and dimensions in a second direction, the first direction and the second direction being perpendicular; the dimension in the first direction increases as the minimum spacing between two adjacent first light-blocking strips increases, and the dimension in the second direction increases as the minimum spacing between two adjacent first light-blocking strips increases; the second direction is consistent with the extension direction of the first light-blocking strip, and the first direction is consistent with the extension direction of the second light-blocking strip.

[0059] The above description is only an overview of the technical solution of the present application. In order to more clearly understand the technical means of the present application, it can be implemented in accordance with the contents of the specification. In order to make the above and other purposes, features and advantages of the present application more obvious and easy to understand, the specific implementation methods of the present application are listed below. BRIEF DESCRIPTION OF THE DRAWINGS

[0060] In order to more clearly illustrate the technical solutions in the embodiments of the present application or related technologies, the following briefly introduces the drawings required for use in the embodiments or related technical descriptions. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0061] FIG1 is a cross-sectional view of a spacer in the related art provided by an embodiment of the present application;

[0062] FIG2 is a schematic structural diagram of a display substrate provided in an embodiment of the present application;

[0063] FIG3 is a schematic structural diagram of another display substrate provided in an embodiment of the present application;

[0064] Figure 4 (1) is a top view of a spacer provided in an embodiment of the present application, Figure 4 (2) is a cross-sectional view of Figure 4 (1) along the A1A2 direction, and Figure 4 (3) is a partial enlarged view of Figure 4 (2);

[0065] Figure 5 (1) is a top view of another spacer provided in an embodiment of the present application, Figure 5 (2) is a cross-sectional view of Figure 4 (1) along the direction A3A4, and Figure 5 (3) is a partial enlarged view of Figure 5 (2);

[0066] 6 to 11 are cross-sectional views of six other spacers provided in embodiments of the present application;

[0067] 12-15 are schematic structural diagrams of four mask plates provided in embodiments of the present application;

[0068] FIG16 is a flow chart of a method for preparing a spacer provided in an embodiment of the present application;

[0069] FIG17 is a flow chart of another method for preparing a spacer provided in an embodiment of the present application;

[0070] 18-19 are schematic structural diagrams of two more masks provided in embodiments of the present application;

[0071] FIG20A is a simulation curve showing the effect of changes in light-blocking strip width on spacer height in three different mask plates provided in an embodiment of the present application;

[0072] FIG20B is a simulation curve showing the effect of changes in light-blocking strip width on the dimensions of spacers in the first direction in three different mask plates provided in an embodiment of the present application;

[0073] FIG20C is a simulation curve showing the effect of changes in light-blocking strip width on the second-direction dimensions of spacers in three different mask plates provided in an embodiment of the present application;

[0074] FIG21A is a simulation curve showing the effect of changes in the spacing between light-blocking strips on the height of spacers in three different mask plates provided in an embodiment of the present application;

[0075] FIG21B is a simulation curve showing the effect of variations in the spacing between light-blocking strips on the dimensions of spacers in the first direction in three different mask plates provided in an embodiment of the present application;

[0076] FIG21C is a simulation curve showing the effect of variations in the spacing between light-blocking strips on the size of spacers in the second direction in three different mask plates provided in an embodiment of the present application;

[0077] FIG22 is a top view and a three-dimensional stereoscopic view of spacers prepared using three different masks according to an embodiment of the present application, wherein Case 1, Case 2, and Case 3 respectively use three different masks;

[0078] FIG23A is a measured curve showing the effect of changes in light-blocking strip width on spacer height in three different mask plates provided in an embodiment of the present application;

[0079] FIG23B is a measured curve showing the effect of changes in light-blocking strip width on the dimensions of spacers in the first direction in three different mask plates provided in an embodiment of the present application;

[0080] FIG23C is a measured curve showing the effect of changes in light-blocking strip width on the second-direction dimensions of spacers in three different mask plates provided in an embodiment of the present application;

[0081] FIG24A is a measured curve showing the effect of variations in the spacing between light-blocking strips on the height of spacers in three different mask plates provided in an embodiment of the present application;

[0082] FIG24B is a measured curve showing the effect of variations in the spacing between light-blocking strips on the dimensions of spacers in the first direction in three different mask plates provided in an embodiment of the present application;

[0083] FIG24C is a measured curve showing the effect of variations in the spacing between light-blocking strips on the dimensions of spacers in the second direction in three different mask plates provided in an embodiment of the present application;

[0084] FIG25A is a curve showing the influence of the number of light-blocking strips, the spacing between the light-blocking strips, and the width of the light-blocking strips on the height of the spacers in the same mask provided in an embodiment of the present application;

[0085] FIG25B is a curve showing the effects of the number of light-blocking strips, the spacing between the light-blocking strips, and the width of the light-blocking strips on the size of the spacer in the first direction in the same mask provided in an embodiment of the present application;

[0086] FIG25C is a curve showing the effect of the number of light-blocking strips, the spacing between the light-blocking strips, and the width of the light-blocking strips on the size of the spacer in the second direction in the same mask provided in an embodiment of the present application;

[0087] FIG26A is a curve showing the effect of the width of the light-blocking strips on the height of the spacers in the same mask provided in an embodiment of the present application;

[0088] FIG26B is a curve showing the effect of the width of the light-blocking strip on the size of the spacer in the first direction in the same mask provided in an embodiment of the present application;

[0089] FIG. 26C is a curve showing the effect of the width of the light-blocking strip on the size of the spacer in the second direction in the same mask provided in an embodiment of the present application. Specific embodiments

[0090] The following will be combined with the drawings in the embodiments of this application to clearly and completely describe the technical solutions in the embodiments of this application. Obviously, the embodiments described are only part of the embodiments of this application, not all of the embodiments. Based on the embodiments in this application, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of this application.

[0091] In the embodiments of the present application, unless otherwise specified, "multiple" means two or more; the orientation or positional relationship indicated by the term "on" and the like is based on the orientation or positional relationship shown in the accompanying drawings, and is only for the convenience of describing the present application and simplifying the description, and does not indicate or imply that the structure or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present application.

[0092] Unless the context requires otherwise, throughout the specification and claims, the term "including" is to be interpreted as having an open, inclusive meaning, that is, "including, but not limited to". In the description of the specification, the terms "one embodiment", "some embodiments", "exemplary embodiments", "example", "specific example" or "some examples" are intended to indicate that specific features, structures, materials or characteristics associated with the embodiment or example are included in at least one embodiment or example of the present application. The schematic representation of the above terms does not necessarily refer to the same embodiment or example. In addition, the specific features, structures, materials or characteristics may be included in any one or more embodiments or examples in any appropriate manner.

[0093] In the embodiments of the present application, words such as "first" and "second" are used to distinguish identical or similar items with substantially the same functions and effects. This is only for the purpose of clearly describing the technical solutions of the embodiments of the present application, and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features.

[0094] The features such as "parallel", "perpendicular" and "same" used in the embodiments of the present application include the features such as "parallel", "perpendicular" and "same" in the strict sense, as well as the cases where "approximately parallel", "approximately perpendicular" and "approximately the same" contain certain errors, taking into account the errors associated with the measurement of specific quantities (for example, the limitations of the measurement system), and represent the acceptable deviation range for the specific value determined by ordinary technicians in this field. For example, "approximately" can mean within one or more standard deviations, or within 10% or 5% of the value. "At least one" means one or more, and "a plurality" means at least two.

[0095] In the embodiments of the present application, "same layer" refers to the relationship between multiple film layers formed from the same material through the same step (e.g., a patterning process). "Same layer" here does not always mean that the multiple film layers have the same thickness or the same height in the cross-sectional view.

[0096] The polygons in this specification are not in a strict sense, and may be approximate triangles, parallelograms, trapezoids, pentagons or hexagons, etc., and may have some small deformations due to fluctuations or tolerances in the manufacturing process.

[0097] With the continuous development of display technology, people are pursuing higher and higher display quality and reliability of display products. In the related art, there is often a large and deep pit at the center of the upper surface of the auxiliary spacer. When the display product is subjected to external force and the main spacer is compressed, the auxiliary spacer is required to play an auxiliary supporting role to prevent the spacer from being damaged. However, as shown in Figure 1, due to the presence of a large and deep pit at the center of the upper surface of the auxiliary spacer, the contact area between the upper surface of the auxiliary spacer and the upper substrate of the display product is insufficient, which reduces the supporting role of the auxiliary spacer. In severe cases, both the main spacer and the auxiliary spacer may be damaged, resulting in abnormal display of the display product. It should be noted that the outline in Figure 1 is a cross-section of the auxiliary spacer along a direction perpendicular to the plane of the substrate of the display substrate, and the cross-section passes through the geometric center of the upper surface of the auxiliary spacer, wherein the geometric center of the upper surface of the auxiliary spacer is located in the area where the pit is located. For example, the lowest point A of the pit can coincide with the geometric center, and the highest point B of the upper surface of the auxiliary spacer can be located at the edge of the pit.

[0098] In view of the structure and supporting effect of the current auxiliary spacers, it is urgently necessary to provide a new spacer structure to improve its supporting effect and increase its service life in display products.

[0099] At least one embodiment of the present application provides a display substrate, including:

[0100] A substrate 1 and an organic structure located on the substrate 1;

[0101] The organic structure includes a first surface M1, which is arranged away from the substrate 1;

[0102] In a direction perpendicular to the plane of the substrate 1 , a difference between a maximum distance between the first surface M1 and the substrate 1 and a minimum distance between the first surface M1 and the substrate 1 is less than or equal to 0.06 μm.

[0103] In an exemplary embodiment, the organic structure may include a spacer; or the organic structure may include a color filter pattern.

[0104] The type of the spacer is not limited here. For example, the spacer may be a main spacer (Main PS); for another example, the spacer may be a supplementary spacer (Sub PS).

[0105] The specific color of the color filter pattern is not limited here. For example, the color filter pattern may include at least one of a red color filter pattern, a green color filter pattern, and a blue color filter pattern.

[0106] Illustratively, the organic structure may include a color filter pattern located in the display area AA, and / or the organic structure may include a color filter pattern located in the peripheral area BB, wherein the peripheral area BB is disposed around the display area AA.

[0107] For example, the organic structure includes a color filter pattern located in the display area AA;

[0108] For another example, the organic structure includes a color filter pattern located in the peripheral area BB;

[0109] For another example, the organic structure includes both a color filter pattern located in the display area AA and a color filter pattern located in the peripheral area BB.

[0110] The material of the substrate 1 is not limited here. For example, the material of the substrate 1 can be a rigid material, such as glass; or the material of the substrate 1 can be a flexible material, such as polyimide.

[0111] The preparation process of the organic structure is not limited here. For example, the organic structure can be prepared using a semi-transparent mask; or, the organic structure can be prepared using a gray tone mask.

[0112] The first surface M1 mentioned above refers to a surface of the organic structure that is farther from the substrate 1 of the display substrate.

[0113] The shape of the plane figure of the first surface M1 is not limited here; the plane figure of the first surface M1 refers to the figure of the orthographic projection of the first surface M1 on the substrate 1 .

[0114] For example, the shape of the plane figure of the first surface M1 may include a polygon, an arc, and a combination of a polygon and an arc;

[0115] For example, polygons may include squares, rectangles, rhombuses, and pentagons; arcs may include circles and ellipses; however, polygons in this specification are not strictly defined, and squares, rectangles, rhombuses, and pentagons may have some small deformations due to tolerances;

[0116] The above deformation may include rounded corner deformation, for example, a square is deformed into a rounded square, and for another example, a rectangle is deformed into a rounded square. Other graphics may also have similar deformations, which will not be described in detail here.

[0117] In a direction perpendicular to the plane of the substrate 1 , a difference between a maximum distance between the first surface M1 and the substrate 1 and a minimum distance between the first surface M1 and the substrate 1 is less than or equal to 0.06 μm.

[0118] Illustratively, in a direction perpendicular to the plane of the substrate 1, the difference between the maximum distance between the first surface M1 and the substrate 1 and the minimum distance between the first surface M1 and the substrate 1 may be 0.015 μm, 0.020 μm, 0.023 μm, 0.025 μm, 0.030 μm, 0.033 μm, 0.035 μm, 0.040 μm, 0.041 μm, 0.045 μm, 0.050 μm, or 0.055 μm.

[0119] Due to the differences in the design and preparation process of the organic structure, the first surface M1 is not an ideal plane, and the distances between various positions on the first surface M1 and the substrate 1 are not completely equal. The difference between the maximum distance between the first surface M1 and the substrate 1 and the minimum distance between the first surface M1 and the substrate 1 of the organic structure provided in the embodiment of the present application is less than or equal to 0.06 μm, that is, the first surface M1 of the organic structure has a high flatness. When the display panel prepared by the display substrate is pressed, the organic structure can play a better supporting role, thereby improving the quality of the display panel.

[0120] In at least one embodiment of the present application, in a direction perpendicular to the plane of the substrate 1 , the distance between the geometric center of the first surface M1 and the substrate 1 is greater than or equal to the average distance between each point on the first surface M1 and the substrate 1 .

[0121] Compared with the related art in which there is often a larger and deeper pit at the center position of the upper surface of the spacer, in at least one embodiment of the present application, by setting the distance between the geometric center position of the first surface M1 and the substrate 1 in a direction perpendicular to the plane where the substrate 1 is located to be greater than or equal to the average value of the distance between each point on the first surface M1 and the substrate 1; so that there is no pit at the center position of the first surface M1 of the organic structure, the flatness near the center position of the first surface M1 of the organic structure can be improved, thereby improving the quality of the organic structure.

[0122] In at least one embodiment of the present application, the organic structure includes a spacer PS, and a surface of the spacer PS away from the substrate 1 is a first surface M1.

[0123] For example, the spacer may be a main spacer (Main PS); for another example, the spacer may be a sub-spacer (Sub PS). The display substrate provided in the embodiment of the present application is described by taking the spacer PS as the sub-spacer as an example.

[0124] In at least one embodiment of the present application, the organic structure includes a color filter pattern (for example, CF-R, CF-G, or CF-B), the display substrate includes a display area AA and a peripheral area BB surrounding the display area AA, and the size of a portion of the color filter pattern located in the peripheral area BB in a direction perpendicular to the plane of the substrate 1 is less than or equal to the size of a portion of the color filter pattern located in the display area AA in a direction perpendicular to the plane of the substrate 1; wherein, the surface away from the substrate 1 in the area where the color filter pattern located in the peripheral area BB does not overlap with the adjacent color filter pattern is the first surface M1.

[0125] Exemplarily, the size of the portion of the color filter pattern located in the peripheral area BB in a direction perpendicular to the plane of the substrate 1 is smaller than the size of the portion of the color filter pattern located in the display area AA in a direction perpendicular to the plane of the substrate 1, that is, the thickness of the portion of the color filter pattern located in the peripheral area BB is smaller than the thickness of the portion of the color filter pattern located in the display area AA.

[0126] In an exemplary embodiment, the color filter pattern may include at least one of a red color filter pattern, a green color filter pattern, and a blue color filter pattern.

[0127] For example, the color filter pattern may include a red color filter pattern, a green color filter pattern, and a blue color filter pattern, and the red color filter pattern, the green color filter pattern, and the blue color filter pattern are arranged in sequence;

[0128] Among them, the part of the color filter pattern located in the peripheral area BB can be used together with the spacer and the black matrix to prevent the alignment liquid from expanding outward. Specifically, when the alignment liquid is applied, the alignment liquid covers the color filter pattern in the display area AA. However, due to the fluidity of the alignment liquid, it expands outward toward the peripheral area BB and even diffuses to the position where the frame glue is located, which will seriously reduce the adhesion performance of the frame glue. In order to prevent the alignment liquid from expanding outward, a black matrix, a color filter pattern and a spacer are set in a local area of ​​the peripheral area BB close to the display area AA. The black matrix, color filter pattern and spacer are stacked to prevent the alignment liquid from flowing outward.

[0129] For example, as shown in Figure 2, the peripheral area BB is provided with a black matrix BM, a color filter pattern (such as CF-R, CF-G, CF-B) and a spacer PS located on the substrate 1. When the thickness of the black matrix, color filter pattern and spacer in the peripheral area BB is the same as the thickness of the black matrix, color filter pattern and spacer in the display area AA, since the color filter pattern in the peripheral area BB is set on the black matrix BM, and the color filter pattern in the display area AA is set between the black matrix BM, this makes the distance between the upper surface of the spacer in the peripheral area BB and the substrate 1 greater than the distance between the upper surface of the spacer in the display area AA and the substrate 1, which can easily cause yellowing or light leakage at the edge of the display panel.

[0130] In order to make the distance between the upper surface of the spacer located in the peripheral area BB and the substrate 1 equal to the distance between the upper surface of the spacer located in the display area AA and the substrate 1, as shown in Figure 3, the size of the part of the color filter pattern located in the peripheral area BB in the direction perpendicular to the plane of the substrate 1 can be set to be smaller than or equal to the size of the part of the color filter pattern located in the display area AA in the direction perpendicular to the plane of the substrate 1. In this way, the quality of the display panel prepared from the display substrate can be ensured.

[0131] In Figure 3, a structural schematic diagram of a mask plate used to prepare a display substrate is drawn, wherein the portion of the color filter pattern located in the peripheral area BB can be prepared using the gray tone pattern in the gray tone mask plate (GTM), and the portion of the color filter pattern located in the display area AA can be prepared using the full-transmittance pattern in the gray tone mask plate.

[0132] Of course, the portion of the color filter pattern located in the peripheral area BB can be prepared using a semi-transparent pattern in a halftone mask (HTM), and the portion of the color filter pattern located in the display area AA can be prepared using a fully transparent pattern in the halftone mask.

[0133] It should be noted that when the organic structure includes a color filter pattern located in the peripheral area BB, due to normal fluctuations in the preparation process accuracy and the equipment alignment accuracy, the two adjacent color filter patterns may overlap. For example, when the blue color filter pattern is formed first and then the green color filter pattern adjacent to the blue color filter pattern is formed, the green color filter pattern may partially cover the blue color filter pattern; the first surface M1 involved in the embodiments of the present application refers to the surface away from the substrate 1 in the area that does not overlap with the adjacent color filter pattern. The drawings provided in the embodiments of the present application are drawn as an example of two adjacent color filter patterns not overlapping.

[0134] In at least one embodiment of the present application, a plurality of protrusions and a plurality of recesses are provided on the first surface M1 , and the recesses are located between at least two protrusions; and a protrusion is provided at the geometric center of the first surface M1 .

[0135] For example, in the case where the organic structure includes a spacer, as shown in FIG4 (2) and FIG4 (3), a plurality of protrusions and a plurality of pits are provided on the first surface M1 of the spacer, and a protrusion is provided at the geometric center of the first surface M1. Among them, FIG4 (2) is a cross-sectional view of FIG4 (1) along the A1A2 direction, and FIG4 (2) is a cross-sectional view of the spacer along a direction perpendicular to the plane of the substrate 1 and passing through the geometric center of the first surface M1, and FIG4 (3) is a partial enlarged view of the marked box area in FIG4 (2).

[0136] Exemplarily, in the case where the organic structure includes a color filter pattern located in the peripheral area BB, a plurality of protrusions and a plurality of pits are provided on the first surface M1 of the color filter pattern, and a protrusion is provided at the geometric center position of the first surface M1. The first surface M1 of the color filter pattern is a surface away from the substrate 1 in an area that does not overlap with an adjacent color filter pattern.

[0137] In at least one embodiment of the present application, the structure of the first surface M1 of the color filter pattern in the display area AA may be the same as the structure of the first surface M1 of the color filter pattern in the peripheral area BB.

[0138] There is no limitation on the sizes of the protrusions and recesses.

[0139] For example, on the first surface M1 of the spacer, the size range of the protrusions in the direction parallel to the plane of the substrate 1 can be 5 μm to 20 μm, and the size range of the protrusions in the direction perpendicular to the plane of the substrate 1 can be 0.02 μm to 0.06 μm. On the first surface M1 of the spacer, the size ranges of the pits in the directions parallel to the plane of the substrate 1 and perpendicular to the plane of the substrate 1 are similar to the size ranges of the protrusions, and are not repeated here.

[0140] For example, on the first surface M1 of the spacer, the dimensions of the protrusions in a direction parallel to the plane of the substrate 1 may be 12 μm, 11.5 μm, 11.2 μm, 11.0 μm, 10.8 μm, 10.3 μm, 10 μm, 9.8 μm, 9.5 μm, 9.2 μm, 9.0 μm, 8.8 μm, 8.5 μm, 8.3 μm, 8.0 μm, 7.5 μm, 7.0 μm, 6.8 μm, 6.5 μm, 6.0 μm, 5.8 μm, and 5.5 μm;

[0141] For another example, on the first surface M1 of the spacer, the size of the protrusion in the direction perpendicular to the plane of the substrate 1 can be 0.03μm, 0.035μm, 0.038μm, 0.040μm, 0.043μm, 0.045μm, 0.048μm, 0.050μm, 0.052μm, 0.055μm, or 0.058μm.

[0142] For example, for the first surface M1 of the color filter pattern located in the peripheral area BB, the size of the protrusion in the direction parallel to the plane of the substrate 1 may range from 5 μm to 30 μm, and the size of the protrusion in the direction perpendicular to the plane of the substrate 1 may range from 0.005 μm to 0.06 μm.

[0143] For example, on the first surface M1 of the color filter pattern located in the peripheral area BB, the size of the protrusion in the direction parallel to the plane of the substrate 1 can be 26 μm, 25 μm, 24 μm, 23 μm, 22 μm, 20 μm, 19 μm, 18 μm, 17.6 μm, 17 μm, 16.5 μm, 16 μm, 15.5 μm, 15 μm, 14.5 μm, 14 μm, 13.5 μm, 13 μm, 12 μm, 11.5 μm, 11.2 μm, 11.0 μm, 10.8 μm, 10.3μm, 10μm, 9.8μm, 9.5μm, 9.2μm, 9.0μm, 8.8μm, 8.5μm, 8.3μm, 8.0μm, 7.5μm, 7.0μm, 6.8μm, 6.5μm, 6.0μm, 5.8μm, 5.5μm.

[0144] For another example, on the first surface M1 of the color filter pattern located in the peripheral area BB, the size of the protrusion in the direction perpendicular to the plane of the substrate 1 can be 0.006μm, 0.007μm, 0.008μm, 0.009μm, 0.01μm, 0.02μm, 0.03μm, 0.035μm, 0.038μm, 0.040μm, 0.043μm, 0.045μm, 0.048μm, 0.050μm, 0.052μm, 0.055μm, and 0.058μm.

[0145] It should be noted that the above exemplary dimensions are all average values. In practical applications, the actual dimensions of each protrusion may fluctuate around the average value.

[0146] In at least one embodiment of the present application, the number of protrusions and recesses on the first surface M1 is not limited;

[0147] In the spacer provided by the embodiment of the present application as shown in Figure 4 (3), since a protrusion is provided at the geometric center position of the first surface M1, compared with the structure of the spacer provided in the related art as shown in Figure 1, it can provide a larger supporting contact area, thereby improving the supporting effect of the spacer and reducing the probability of the spacer being compressed and deformed and unable to recover or being crushed, thereby improving the quality of the display substrate.

[0148] In at least one embodiment of the present application, the organic structure includes a first cross section, the first cross section being a cross section along a direction perpendicular to the plane of the substrate 1 , and an intersection line between the first cross section and the first surface M1 being parallel to a side of the first surface M1 ;

[0149] The number of the protrusions provided at the intersection line between the first surface M1 and the first cross section is an odd number.

[0150] For example, an organic structure is used as a spacer. As shown in FIG4 (1) and FIG5 (1), the intersection line between the first cross section (the positions marked A1A2 and A3A4 are the intersections of the first cross section and the first surface M1) and the first surface M1 is parallel to the side of the first surface M1. The structures shown in FIG4 (1) and FIG5 (1) are both the first surface M1 of the spacer. FIG5 (2) is a cross-sectional view along the A3A4 direction as shown in FIG5 (1).

[0151] For example, as shown in Figure (3) in Figure 4, the first section is a section along a direction perpendicular to the plane of the substrate 1, and the intersection line of the first section and the first surface M1 is parallel to the side of the first surface M1; the number of protrusions set at the intersection line of the first surface M1 and the first section is 5.

[0152] For example, as shown in Figure (3) in Figure 5, the first section is a section along a direction perpendicular to the plane of the substrate 1, and the intersection line of the first section and the first surface M1 is parallel to the side of the first surface M1; the number of protrusions set at the intersection line of the first surface M1 and the first section is 7.

[0153] For the color filter pattern located in the peripheral area BB, the intersection line between the first section and the first surface M1 is parallel to the side of the first surface M1, and the number of protrusions arranged at the intersection line between the first surface M1 and the first section is an odd number.

[0154] For example, in the color filter pattern located in the peripheral area BB, the number of protrusions arranged at the intersection line between the first surface M1 and the first cross section may be 3, 5, 7 or 9.

[0155] In at least one embodiment of the present application, the organic structure includes a first cross-section, which is a cross-section along a direction perpendicular to the plane of the substrate 1, and the intersection line of the first cross-section and the first surface M1 passes through the geometric center of the first surface M1; the number of protrusions arranged at the intersection line of the first surface M1 and the first cross-section is an odd number.

[0156] Exemplarily, when the intersection line of the first section and the first surface M1 passes through the geometric center of the first surface M1, the number of protrusions set at the intersection line of the first surface M1 and the first section is an odd number. For example, regardless of the spacer or the color film pattern, the number of protrusions set at the intersection line of the first surface M1 and the first section can be 3, 5, 7 or 9.

[0157] Exemplarily, no matter for the spacer or the color filter pattern, the multiple protrusions provided at the intersection line between the first surface M1 and the first cross section are distributed in mirror symmetry.

[0158] In at least one embodiment of the present application, the orthographic projection of the first surface M1 on the substrate 1 is a quadrilateral; the intersection line of the first surface M1 and the first cross section is parallel to the diagonal line of the quadrilateral;

[0159] Alternatively, an intersection line between the first surface M1 and the first cross section is parallel to the sides of the quadrilateral.

[0160] It should be noted that the above quadrilateral is not necessarily a standard quadrilateral, and may also be a slight deformation of the standard quadrilateral, including but not limited to: a standard quadrilateral and a rounded quadrilateral.

[0161] When the organic structure includes a spacer or a color filter structure, the first cross section passing through the geometric center of the first surface M1 may include two cases:

[0162] First, when the orthographic projection of the first surface M1 on the substrate 1 is a quadrilateral, the first cross section is parallel to a side of the quadrilateral, and the intersection line between the first surface M1 and the first cross section is parallel to the same side of the quadrilateral; in this case, the number of protrusions provided at the intersection line between the first surface M1 and the first cross section is an odd number;

[0163] The second type is that when the orthographic projection figure of the first surface M1 on the substrate 1 is a quadrilateral, the first section is parallel to the diagonal of the quadrilateral, and the intersection line of the first surface M1 and the first section is parallel to the same diagonal of the quadrilateral; at this time, the number of protrusions set at the intersection line of the first surface M1 and the first section is an odd number.

[0164] In at least one embodiment of the present application, for both the spacer and the color filter pattern, the first surface M1 thereof includes a middle region and an edge region surrounding the middle region, and the geometric center of the first surface M1 is located in the middle region;

[0165] In the embodiment of the present application, the middle region at least includes a protrusion located at the geometric center of the first surface M1 , and the edge region at least includes a plurality of protrusions located near the outer contour of the first surface M1 .

[0166] The maximum distance between the portion of the protrusion located in the middle region and the substrate 1 is greater than or equal to the maximum distance between the portion of the protrusion located in the edge region and the substrate 1 .

[0167] Exemplarily, the average value of the distance between the middle region of the first surface M1 of the spacer and the substrate 1 in the direction perpendicular to the plane of the substrate 1 is larger, and the average value of the distance between the edge region of the first surface M1 of the spacer and the substrate 1 in the direction perpendicular to the plane of the substrate 1 is smaller; the height (PSH) of the part of the spacer located in the middle region is larger, and the height (PSH) of the part of the spacer located in the edge region is smaller.

[0168] Exemplarily, the average value of the distance between the middle area of ​​the first surface M1 of the color filter pattern and the substrate 1 in the direction perpendicular to the plane of the substrate 1 is larger, and the average value of the distance between the edge area of ​​the first surface M1 of the color filter pattern and the substrate 1 in the direction perpendicular to the plane of the substrate 1 is smaller; the thickness of the part of the color filter pattern located in the middle area is larger, and the thickness of the part of the color filter pattern located in the edge area is smaller; it should be noted that the first surface M1 of the color filter pattern refers to the surface on the side away from the substrate 1 in the area that does not overlap with the adjacent color filter pattern.

[0169] In at least one embodiment of the present application, for the spacer, multiple protrusions are provided at the outer contour position of the first surface M1, and the maximum distance between the part of the protrusion located at the outer contour position of the first surface M1 and the substrate 1 is less than or equal to the maximum distance between each other protrusion and the substrate 1.

[0170] Exemplarily, as shown in FIG6 , for the spacer, a plurality of protrusions are provided at the outer contour position of the first surface M1 thereof, and the maximum distance h2 between the portion of the protrusion located at the outer contour position of the first surface M1 and the substrate 1 is equal to the maximum distance h1 between the other protrusions and the substrate 1 .

[0171] Exemplarily, as shown in FIG7 , for the spacer, a plurality of protrusions are provided at the outer contour position of the first surface M1 , and the maximum distance h2 between the portion of the protrusion located at the outer contour position of the first surface M1 and the substrate 1 is smaller than the maximum distance h1 between the other protrusions and the substrate 1 .

[0172] The maximum distance h2 between the portion of the protrusion located at the outer contour of the first surface M1 and the substrate 1 and the maximum distance h1 between the other protrusions and the substrate 1 are both average values.

[0173] It should be noted that due to the influence of the flatness of the structure of the bottom layer of the spacer in the display substrate and the test error of the detection equipment, the actual measured maximum distance between the part of the protrusion located at the outer contour position of the first surface M1 and the substrate 1 and the maximum distance h1 between other protrusions and the substrate 1 may fluctuate. Fluctuations within the range of 1.5% centered on the average value are all within the scope of protection of this application.

[0174] In at least one embodiment of the present application, for the spacer, the first surface M1 includes a middle area and an edge area surrounding the middle area, and the geometric center of the first surface M1 is located in the middle area;

[0175] The curvature radius of the portion of the protrusion located in the middle area is smaller than or equal to the curvature radius of the portion of the protrusion located in the edge area.

[0176] It should be noted that the curvature radius of the portion of the protrusion located in the middle area refers to the average value of the curvature radius of the protrusion in the area, and the curvature radius of the portion of the protrusion located in the edge area refers to the average value of the curvature radius of the protrusion in the area.

[0177] In at least one embodiment of the present application, as shown in (2) of Figure 4 and (2) of Figure 5, when the organic structure includes a spacer, the spacer includes a side surface, the side surface is a curved surface, and the intersection line of the side surface and the first section is arc line D.

[0178] For example, the plane shape of the first surface M1 of the spacer is a quadrilateral, wherein the intersection line of the first surface M1 and the first cross section is parallel to the diagonal line of the quadrilateral; or, the intersection line of the first surface M1 and the first cross section is parallel to the side of the quadrilateral.

[0179] In an exemplary embodiment, since the size of the first surface M1 of the spacer is smaller than or equal to the size of the second surface, wherein the second surface is a surface disposed opposite to the first surface M1 and close to the substrate 1, the side surface of the spacer is an annular arc surface;

[0180] In at least one embodiment of the present application, the radius of curvature of the arc gradually decreases in a direction away from the substrate 1 .

[0181] In the related art, as at the position marked C in FIG1 , the intersection line of the side surface and the first cross section is a straight line, and the first cross section in FIG1 is a cross section passing through the geometric center A of the first surface M1 and perpendicular to the plane where the substrate 1 is located;

[0182] In the present application, as shown in the position marked D in (2) of Figure 4 and (2) of Figure 5, the intersection line of the side of the spacer and the first cross section is an arc. When the display substrate is prepared to form a display panel, the display panel is compressed by external force. Compared with the side of the spacer of the related art as shown in Figure 1, since the intersection line of the side of the spacer of the present application and the first cross section is an arc, that is, the slope of the side of the spacer gradually changes, and the slope angle of the side of the spacer provided in the embodiment of the present application is smaller than the slope angle of the spacer in the related art, the spacer of the present application can withstand greater pressure and has a better elastic recovery rate.

[0183] Taking the above-mentioned spacer as a supplementary spacer (Sub PS) as an example for testing and explanation, when the height PSH of Sub PS is 2.35μm (the side length of the first surface M1, taking the first surface M1 as a square as an example) and the Top CD is 21μm, under a load of 100mN, the elastic recovery rate of the supplementary spacer in the related art is 80%, while the elastic recovery rate of the supplementary spacer provided in the embodiment of the present application can be as high as 89.9%. The performance of the supplementary spacer provided in the embodiment of the present application has been significantly improved.

[0184] In at least one embodiment of the present application, when the organic structure includes a spacer, the distance between the vertices of two adjacent protrusions in a direction parallel to the plane of the substrate 1 is equal to 1 / 2 to 1 / 6 of the size of the planar figure of the spacer along a preset direction, wherein the preset direction is the direction in which one protrusion of the two adjacent protrusions points to the other protrusion.

[0185] The vertex of the protrusion refers to a point in the protrusion at the maximum distance from the substrate 1 in a direction perpendicular to the plane where the substrate 1 is located.

[0186] For example, as shown in FIG6 , the distance between the vertex of the protrusion on the left and the vertex of the protrusion in the middle is equal to 1 / 2 of the dimension of the first surface M1 along the preset direction, and the preset direction is the direction from the protrusion on the left to the protrusion in the middle in FIG6 ;

[0187] For example, as shown in FIG4 (3), the distance between the vertex of the protrusion at the middle position and the vertex of the protrusion to the right thereof is equal to 1 / 4 of the dimension of the first surface M1 along the preset direction; the preset direction is the direction in which the protrusion at the middle position of FIG4 (3) points to the protrusion to the right thereof;

[0188] Exemplarily, when the preset direction is parallel to the intersection line of the first surface M1 and the first section, if the number of protrusions on the intersection line is 2N+1, the average value of the distance between the vertices of two adjacent protrusions is equal to 1 / 2N, where N is a positive integer.

[0189] Exemplarily, when the planar figure of the spacer is a quadrilateral, the size of the first direction and the size of the second direction in the quadrilateral are both in the range of 10μm to 60μm, and the first direction and the second direction are perpendicular; for example, the distance between the vertices of two adjacent protrusions can be 15μm, 12μm, 11μm, 10μm, 8μm, 6μm, 5μm, or 3μm.

[0190] In at least one embodiment of the present application, the number of pits provided at the intersection line between the first surface M1 and the first cross section is an even number, and the number of protrusions is greater than the number of pits.

[0191] In at least one embodiment of the present application, the number of protrusions arranged at the intersection line of the first surface M1 and the first cross-section is 3 (for example, as shown in Figures 6 and 7), 5 (for example, as shown in Figures 8 and 9), and any one of 7 (for example, as shown in Figures 10 and 11).

[0192] In an exemplary embodiment, the orthographic projection of the first surface on the substrate is a quadrilateral, and when the intersection line between the first surface M1 and the first cross section is parallel to the diagonal line of the quadrilateral, the number of protrusions provided at the intersection line between the first surface M1 and the first cross section is any one of 3, 5, and 7;

[0193] In an exemplary embodiment, the orthographic projection of the first surface on the substrate is a quadrilateral, and when the intersection line between the first surface M1 and the first cross section is parallel to the side length of the quadrilateral, the number of protrusions provided at the intersection line between the first surface M1 and the first cross section is any one of 3, 5, and 7;

[0194] It should be noted that the above-mentioned quadrilaterals include but are not limited to standard quadrilaterals and rounded quadrilaterals.

[0195] In at least one embodiment of the present application, along a direction perpendicular to the plane of the substrate 1 , a standard deviation of three times the size of the organic structure along the direction perpendicular to the plane of the substrate 1 is less than or equal to 0.2 μm.

[0196] For example, taking the height of the organic structure (the height of the spacer PSH or the thickness of the color film pattern THK) as 3μm to 2μm, the standard deviation of three times the size of the organic structure in the direction perpendicular to the plane of the substrate 1 is less than or equal to 0.2μm. At this time, the height of the organic structure at different positions in the display substrate has good uniformity, which improves the quality of the display substrate.

[0197] An embodiment of the present application provides a display panel, comprising the display substrate as described above.

[0198] The specific structure of the display substrate included in the display panel will not be described in detail here, and reference may be made to the above embodiments for details.

[0199] The display panel provided in the embodiment of the present application includes a display substrate. Due to the differences in the design of the organic structure and the preparation process in the display substrate, the first surface M1 of the organic structure is not an ideal plane, and the distances between various positions on the first surface M1 and the substrate 1 are not completely equal. The difference between the maximum distance between the first surface M1 of the organic structure provided in the embodiment of the present application and the substrate 1 and the minimum distance between the first surface M1 and the substrate 1 is less than or equal to 0.06 μm, that is, the first surface M1 of the organic structure has a high flatness. When the display panel prepared from the display substrate is pressed, the organic structure can play a better supporting role, thereby improving the quality of the display panel.

[0200] An embodiment of the present application provides a display device, including the display panel as described above. The above-mentioned display device can be a display device such as an LCD display, as well as any product or component with a display function such as a television, digital camera, mobile phone, tablet computer, etc. that includes these display devices.

[0201] A mask is a graphic master used in the field of photolithography. During the exposure process, the pattern on the mask is transferred to the corresponding product carrier. The columnar spacers in thin-film transistor liquid crystal displays (TFT-LCDs) are key structures that support the thickness of the cell. They are often made using a half-tone mask (HTM) to reduce the process steps. The main spacers (Main PS) are made using the full-tone pattern in the half-tone mask, and the sub-spacers (Sub PS) are made using the half-tone pattern in the half-tone mask to form a step difference between the main spacers and the sub-spacers. However, in the related art, the preparation of the half-tone mask HTM is difficult and has a long preparation cycle. In particular, the process of forming a chromium film in a predetermined area of ​​the half-tone mask to achieve a semi-transparent effect is extremely technically difficult and costly.

[0202] Based on this, embodiments of the present application provide a gray tone mask (GTM). This gray tone mask features micro-patterns designed within the slits. After the light source from a lithography machine passes through the micro-patterns within the slits, the actual light intensity received by the lithography machine is reduced, achieving an effect similar to the semi-transparent pattern in a translucent mask. This gray tone mask has a low production cost and a short production cycle, and the spacers formed using this gray tone mask are of high quality.

[0203] The mask provided in the embodiments of the present application will be specifically introduced and described below with reference to the accompanying drawings.

[0204] An embodiment of the present application provides a mask plate for preparing a display substrate as described above, and the mask plate includes a plurality of first slits (not drawn), as shown in Figures 12 to 15, and a plurality of first light-blocking strips 2 arranged along the same direction and a plurality of second light-blocking strips 3 arranged along the same direction are provided in the first slits, the first light-blocking strips 2 and at least one second light-blocking strip 3 intersect, and the plane figure of the pattern in the first slit is a mirror-symmetrical figure.

[0205] It should be noted that the patterns shown in FIG. 12 to FIG. 15 are all micro patterns set in the first gap.

[0206] In an exemplary embodiment, the mask is used to prepare the organic structure as described above, wherein the organic structure includes spacers and a color filter structure;

[0207] When the mask is used to form spacers, the number of the first slits in the mask is the same as the number of the spacers, for example, the number of the first slits is the same as the number of the auxiliary spacers, and the arrangement pattern of the first slits is the same as the arrangement pattern of the auxiliary spacers;

[0208] When the mask is used to form a color filter structure, exemplarily, when it is used to form a color filter structure (e.g., CF-R) located in the peripheral area BB, the number of first slits in the mask is the same as that of the color filter structure (e.g., CF-R) located in the peripheral area BB, and the arrangement pattern of the first slits in the mask is the same as that of the color filter structure (e.g., CF-R) located in the peripheral area BB.

[0209] Exemplarily, the mask may further include a plurality of second slits, wherein the second slits are fully transparent patterns; when the mask is used to form spacers, the second slits may be used to form main spacers; when the mask is used to form a color filter pattern, the second slits are used to form a color filter pattern located in the display area AA; wherein, the height of the main spacer is greater than the height of the auxiliary spacer, and the thickness of the color filter pattern located in the display area AA is greater than the thickness of the color filter pattern located in the peripheral area.

[0210] In an exemplary embodiment, the planar shapes of the first light-blocking strip 2 and the second light-blocking strip 3 are both strip-shaped, for example, rectangular.

[0211] In an exemplary embodiment, as shown in FIG12 to FIG15 , the width a of the first light-shielding strip 2 and the width f of the second light-shielding strip 3 are equal;

[0212] In at least one embodiment of the present application, the minimum distance b between two adjacent first light-blocking strips 2 is different from the minimum distance e between two adjacent second light-blocking strips 3 ;

[0213] In at least one embodiment of the present application, the minimum distance b between two adjacent first light-blocking strips 2 is equal to the minimum distance e between two adjacent second light-blocking strips 3; this specification uses the example that the minimum distance b between two adjacent first light-blocking strips 2 is equal to the minimum distance e between two adjacent second light-blocking strips 3.

[0214] Among them, the minimum distance between the above-mentioned two adjacent first light-blocking strips 2 refers to the distance between the two adjacent first light-blocking strips 2 in the direction perpendicular to the first light-blocking strips 2. The meaning of the minimum distance between the two adjacent second light-blocking strips 3 is similar to the above and will not be repeated here.

[0215] The intersection of the first light-blocking strip 2 and the at least one second light-blocking strip 3 includes but is not limited to the following situations:

[0216] The first type is that one first light-blocking strip 2 intersects with one second light-blocking strip 3, and the first light-blocking strip 2 does not intersect with any other second light-blocking strips 3;

[0217] The second type is that one first light-blocking strip 2 intersects with two second light-blocking strips 3 respectively, and the first light-blocking strip 2 does not intersect with the other second light-blocking strips 3;

[0218] The third type is that the first light-blocking strip 2 of the first part intersects with the second light-blocking strip 3 of the first part, and the first light-blocking strip 2 of the second part intersects with the second light-blocking strip 3 of the second part;

[0219] For example, as shown in FIG15 , a first light-blocking bar 2 (e.g., the first light-blocking bar marked 2A in FIG15 ) intersects with three second light-blocking bars 3 (including two second light-blocking bars marked 3A and one second light-blocking bar marked 3C), and the first light-blocking bar 2 does not intersect with any other second light-blocking bar (e.g., the second light-blocking bar marked 3C);

[0220] Fourth, one of the first light-blocking strips 2 intersects with all the second light-blocking strips 3; one of the second light-blocking strips 3 intersects with all the first light-blocking strips 2;

[0221] For example, as shown in FIG12 , FIG13 and FIG14 , for each first light-blocking strip 2 , it intersects with all the second light-blocking strips 3 ; for each second light-blocking strip 3 , it intersects with all the first light-blocking strips 2 ;

[0222] For example, as shown in FIG15 , one of the first light-blocking strips 2 (for example, the first light-blocking strip marked 2C) intersects with all the second light-blocking strips 3 ; and one of the second light-blocking strips 3 (for example, the second light-blocking strip marked 3C) intersects with all the first light-blocking strips 2 .

[0223] In an exemplary embodiment, the mask provided in the embodiment of the present application is mainly used to prepare spacers and color film patterns. In order to take into account the simplicity of the planar graphics of the spacers and color film structures and better support effects, the planar graphics of the patterns in the first gap of the mask are designed to be mirror-symmetrical graphics, so as to prepare spacers and color film structures with mirror-symmetrical characteristics in the planar graphics; it should be noted that in this specification, the planar graphics of a certain structure refer to the orthographic projection graphics of the structure on the substrate 1 or the reference surface, and the meanings of the relevant descriptions involved in other positions are the same as those here and will not be repeated.

[0224] The reticle provided in the embodiments of this application is a gray-tone reticle. By designing a micro-pattern in the first slit, the intensity of light received by the lithography machine is reduced after the light source passes through the micro-pattern in the slit, achieving an effect similar to the semi-transparent pattern in a translucent reticle. This gray-tone reticle has a low production cost and a short production cycle, and the spacers formed by this gray-tone reticle are of high quality.

[0225] In at least one embodiment of the present application, as shown in FIG. 12 to FIG. 15 , the number of the first light-blocking bars and the number of the second light-blocking bars are the same.

[0226] For example, as shown in FIG12 , the number of the first light-blocking strips 2 and the number of the second light-blocking strips 3 are both 2;

[0227] For example, as shown in FIG13 , the number of the first light-blocking strips 2 and the number of the second light-blocking strips 3 are both 3;

[0228] For example, as shown in FIG14 , the number of the first light-blocking strips 2 and the number of the second light-blocking strips 3 are both 4;

[0229] For example, as shown in FIG15 , the number of the first light-blocking bars 2 and the number of the second light-blocking bars 3 are both five.

[0230] In at least one embodiment of the present application, as shown in FIG. 12 to FIG. 15 , the first light-blocking bar 2 and the second light-blocking bar 3 are vertically arranged.

[0231] In at least one embodiment of the present application, as shown in Figures 12 to 15, the minimum spacing b between two adjacent first light-blocking strips 2 is equal to the minimum spacing e between two adjacent second light-blocking strips 3, and the minimum spacing b between two adjacent first light-blocking strips 2 is greater than the width a of the first light-blocking strip.

[0232] Exemplarily, the width a of the first light blocking strip 2 is greater than or equal to 1.0 μm; its preferred width range is 1 μm to 4 μm; for example, the width a of the first light blocking strip can be 1.2 μm, 1.5 μm, 1.8 μm, 1.9 μm, 2.0 μm, 2.2 μm, 2.4 μm, 2.5 μm, 2.8 μm, 3.0 μm, 3.2 μm, 3.5 μm, 3.8 μm, or 4.0 μm.

[0233] Exemplarily, the width f of the second light-blocking strip 3 is greater than or equal to 1.0 μm; its preferred width range is 1 μm to 4 μm; for example, the width a of the first light-blocking strip can be 1.5 μm, 1.8 μm, 1.9 μm, 2.0 μm, 2.2 μm, 2.4 μm, 2.5 μm, 2.8 μm, 3.0 μm, 3.2 μm, 3.5 μm, 3.8 μm, or 4.0 μm.

[0234] In at least one embodiment of the present application, a width a of the first light-blocking strip is equal to a width f of the second light-blocking strip.

[0235] For example, the minimum spacing b between two adjacent first light shielding strips 2 is in the range of 2.5 μm to 14 μm, and the preferred range is 4 μm to 12 μm; for example, the minimum spacing b between two adjacent first light shielding strips 2 is 4.2 μm, 4.5 μm, 4.8 μm, 5.0 μm, 5.2 μm, 5.5 μm, 5.8 μm, 6.0 μm, 6.3 μm, 6.5 μm, 6.8μm, 7.0μm, 7.3μm, 7.5μm, 7.8μm, 8.0μm, 8.3μm, 8.5μm, 8.8μm, 9.0μm, 9.5μm, 9 .8μm, 10.0μm, 10.3μm, 10.5μm, 10.8μm, 11.0μm, 11.3μm, 11.5μm, 11.8μm, 12.0μm.

[0236] Exemplarily, the minimum spacing e between two adjacent second light-blocking strips 3 is in the range of 2.5 μm to 14 μm, and the preferred range is 4 μm to 12 μm; for example, the minimum spacing e between two adjacent second light-blocking strips 3 is 4.2 μm, 4.5 μm, 4.8 μm, 5.0 μm, 5.2 μm, 5.5 μm, 5.8 μm, 6.0 μm, 6.3 μm, 6.5 μm, 6.8 μm, 7.0 μm, 7.3 μm, 7.5 μm, 7.8 μm, 8.0 μm, 8.3 μm, 8.5 μm, 8.8 μm, 9.0 μm, 9.5 μm, 9.8 μm, 10.0 μm, 10.3 μm, 10.5μm, 10.8μm, 11.0μm, 11.3μm, 11.5μm, 11.8μm, 12.0μm.

[0237] Exemplarily, the minimum distance e between two adjacent second light-shielding strips 3 is greater than the width f of the second light-shielding strip 3 ;

[0238] Exemplarily, the minimum distance e between two adjacent second light-shielding strips 3 is equal to the width f of the second light-shielding strip 3 .

[0239] For example, as shown in FIG12 , the size d of the first extension portion of the first light-blocking strip 2 is equal to the size g of its second extension portion, and the size c of the first extension portion of the second light-blocking strip 3 is equal to the size h of its second extension portion; it should be noted that the sizes marked d, g, c, and h in FIG12 are related to the sizes of the planar graphics of the organic structure (such as a spacer or a color film pattern) prepared using the mask, and the larger the above four sizes are, the larger the size of the corresponding planar graphics of the organic structure.

[0240] In this specification, the four parameters of the first extension portion d and the second extension portion g of the first light shielding strip 2 and the first extension portion c and the second extension portion h of the second light shielding strip 3 are equal are used as an example for description.

[0241] In at least one embodiment of the present application, as shown in Figures 12 to 14, the structures and sizes of the first light-blocking strips 2 and the second light-blocking strips 3 are the same, any first light-blocking strip 2 and each second light-blocking strip 3 intersect, and any second light-blocking strip 3 and each first light-blocking strip 2 intersect.

[0242] For example, the patterns in the first slits of the mask are shown in FIG12 . The planar figures of the first light-blocking strips 2 and the second light-blocking strips 3 are both rectangular, and the planar figures of the two are the same. The number of the first light-blocking strips 2 and the number of the second light-blocking strips 3 are both two. The geometric center of the pattern shown in FIG12 is located in the hollow area surrounded by the two first light-blocking strips 2 and the two second light-blocking strips 3, and the hollow area is light-transmissive.

[0243] For example, the patterns in the first slits of the mask are shown in FIG13 . The planar figures of the first light-blocking strip 2 and the second light-blocking strip 3 are both rectangular, and the areas of the planar figures of the two are the same. The number of the first light-blocking strips 2 and the number of the second light-blocking strips 3 are both three. The geometric center of the pattern shown in FIG13 is located at the intersection of the first light-blocking strip 2 and the second light-blocking strip 3, that is, its geometric center is located in the non-hollow area.

[0244] For example, the patterns in the first slits of the mask are shown in FIG14 . The planar figures of the first light-blocking strip 2 and the second light-blocking strip 3 are both rectangular, and the areas of the planar figures of the two are the same. The number of the first light-blocking strips 2 and the number of the second light-blocking strips 3 are both four. The geometric center of the pattern shown in FIG14 is located at the intersection of the first light-blocking strip 2 and the second light-blocking strip 3, that is, its geometric center is located in the non-hollow area.

[0245] Among them, for the patterns shown in Figures 13 and 14, as the number of light-blocking strips located in the first gap of the same size increases, when the mask is used to prepare the organic structure, the diffraction effect of light is enhanced, and the area of ​​the organic structure corresponding to the non-hollow area of ​​the mask can also receive light, and the stronger the extension effect, the stronger the light received by the area of ​​the organic structure corresponding to the non-hollow area.

[0246] The organic structure (such as spacers and color film patterns) prepared by the mask provided in the embodiments of the present application as shown in Figures 12-14 can greatly improve the problem of a single large pit (also known as a crater) appearing at the geometric center position of the first surface M1 of the organic structure in the related art, and can greatly improve the surface flatness and thickness uniformity of the organic structure, thereby improving the support effect of the organic structure and improving the quality of the organic structure.

[0247] In at least one embodiment of the present application, as shown in FIG15 , the first light-shielding bars 2 include a first group (the first light-shielding bars marked 2A), a second group (the first light-shielding bars marked 2B), and a third group (the first light-shielding bars marked 2C); the second light-shielding bars 3 include a first group (the second light-shielding bars marked 3A), a second group (the second light-shielding bars marked 3B), and a third group (the second light-shielding bars marked 3C);

[0248] The first group of first light-blocking bars and the second group of first light-blocking bars each include two first light-blocking bars 2, the first group of second light-blocking bars and the second group of second light-blocking bars each include two second light-blocking bars, the third group of first light-blocking bars includes one first light-blocking bar, and the third group of second light-blocking bars includes one second light-blocking bar;

[0249] The first group of first light-blocking strips 2A and the first group of second light-blocking strips 3A intersect to form a first closed ring, the second group of first light-blocking strips 2B and the second group of second light-blocking strips 3B intersect to form a second closed ring, the second closed ring is located inside the first closed ring, the third group of first light-blocking strips 2C and the third group of second light-blocking strips 3C intersect, and both intersect with the first closed ring and the second closed ring respectively, and the geometric center of the mask is located at the intersection of the third group of first light-blocking strips 2C and the third group of second light-blocking strips 3C.

[0250] In an embodiment of the present application, by setting the edge of the pattern in the first gap of the mask to a closed figure (such as the above-mentioned first closed ring and second closed ring), the exposure controllability of the edge area of ​​the organic structure (such as the spacer and the color filter pattern) can be greatly improved, so that the edge area of ​​the organic structure is evenly exposed, and the thickness uniformity of the edge area of ​​the organic structure is improved. Combined with the intersection of the third group of first light-blocking strips 2C and the third group of second light-blocking strips 3C, and the two intersect with the first closed ring and the second closed ring respectively; the middle area of ​​the organic structure obtained by the exposure of the mask also has a high thickness uniformity; the process stability and controllability of the organic structure prepared by the mask are high, the quality is good, the cost of the mask is low, and the preparation cycle is short; by comparison, the cost and preparation cycle of the mask are reduced by 50% or more than that of the halftone mask in the related art.

[0251] An embodiment of the present application provides a method for preparing a display substrate, as shown in FIG16 , the method comprising:

[0252] S801, providing a substrate 1;

[0253] The material of the substrate 1 is not limited here. For example, the material of the substrate 1 can be a rigid material, such as glass; or the material of the substrate 1 can be a flexible material, such as polyimide.

[0254] S802, forming a spacer material film;

[0255] A coating process can be used to form a spacer material film on the entire surface.

[0256] S803. Use a mask as described above to pattern the spacer material film to obtain a spacer; wherein the spacer includes a first surface M1, the first surface M1 is arranged away from the substrate 1, and the first surface M1 is provided with a plurality of protrusions and a plurality of pits, and the pit is located between at least two protrusions; wherein the first surface M1 is provided with a protrusion at the geometric center position, and in the direction perpendicular to the plane where the substrate 1 is located, the difference between the maximum distance between the first surface M1 and the substrate 1 and the minimum distance between the first surface M1 and the substrate 1 is less than or equal to 0.06μm.

[0257] The above-mentioned mask refers to the grayscale mask provided in the embodiment of the present application. The specific structure of the grayscale mask can be referred to the introduction in the previous text and will not be repeated here.

[0258] There is no limitation on the type of the spacer. For example, the spacer may be a main spacer (Main PS); for another example, the spacer may be a sub-spacer (Sub PS). The embodiment of the present application is described using the spacer prepared by the mask as a sub-spacer.

[0259] Due to the differences in the design and preparation process of the organic structure, the first surface M1 is not an ideal plane, and the distances between various positions on the first surface M1 and the substrate 1 are not completely equal. In the embodiment of the present application, the difference between the maximum distance between the first surface M1 and the substrate 1 and the minimum distance between the first surface M1 and the substrate 1 of the organic structure prepared by the above-mentioned preparation method is less than or equal to 0.06μm, that is, the first surface M1 of the organic structure has a high flatness. When the display panel prepared by the display substrate is pressed, the organic structure can play a better supporting role, thereby improving the quality of the display panel.

[0260] It should be noted that the spacers and the color film pattern located in the peripheral area BB can both play a supporting role.

[0261] In at least one embodiment of the present application, as shown in FIG17 , S803 , the step of patterning the spacer material film using a mask as described above to obtain the spacer includes:

[0262] S8031. Determine the preset height and preset plane dimensions of the spacer;

[0263] In practical applications, the preset height and preset plane size of the required spacers are calculated based on the type and design of the product.

[0264] S8032. Determine two of the three parameters of the mask: the number of first light-blocking bars 2, the width a of the first light-blocking bars 2, and the minimum spacing between two adjacent first light-blocking bars 2. The number of first light-blocking bars 2 is the same as the number of second light-blocking bars 3, the width a of the first light-blocking bars 2 is the same as the width f of the second light-blocking bars 3, and the minimum spacing b between two adjacent first light-blocking bars 2 is the same as the minimum spacing e between two adjacent second light-blocking bars 3.

[0265] Determining the shape and size of the pattern in the first slit of the mask required to prepare the spacer of the specified specification based on the preset height and the preset plane size of the spacer;

[0266] In an embodiment of the present application, before determining two of the three parameters of the number of first light-blocking strips 2 in the mask, the width a of the first light-blocking strips 2, and the minimum spacing between two adjacent first light-blocking strips 2, other parameters other than the above three parameters must be set; then the influence trend of the changes in the above three parameters on the preset height and preset plane size of the spacer is studied; in combination with the difficulty and cost issues of the mask preparation process, two of the above three parameters are determined, and then the influence trend of the change of the remaining parameter (unknown parameter) on the dimensional parameters (height and plane size) of the spacer is explored.

[0267] S8033. Obtain a preset relationship between unknown parameters among the three parameters: the number of first light-blocking strips 2, the width a of the first light-blocking strips 2, and the minimum spacing b between two adjacent first light-blocking strips 2, and the size parameters of the spacers;

[0268] The preset relationship between the unknown parameters among the three parameters of the number of first light-blocking strips 2, the width a of the first light-blocking strips 2, and the minimum spacing b between two adjacent first light-blocking strips 2 and the size parameters of the spacers can be obtained through simulation calculation combined with experimental testing. For example, a preset relationship curve can be obtained.

[0269] S8034. Determine unknown parameters of the mask based on the size parameters of the spacer and the preset relationship.

[0270] Among them, the size parameters of the spacer include the height PSH, the size TX in the first direction and the size TY in the second direction. The height PSH of the spacer decreases as the minimum spacing b between two adjacent first light-blocking strips 2 increases, and the plane size of the spacer increases as the minimum spacing b between two adjacent first light-blocking strips 2 increases; the minimum spacing b between two adjacent first light-blocking strips 2 is the same as the minimum spacing e between two adjacent second light-blocking strips 3.

[0271] S8035. Determine the specifications of the mask according to the three parameters of the mask, and then use the mask to pattern the spacer material film to obtain a spacer.

[0272] In at least one embodiment of the present application, the step of S8032, determining two of the three parameters of the number of first light-blocking bars 2 in the mask, the width a of the first light-blocking bars 2, and the minimum spacing b between two adjacent first light-blocking bars 2, includes:

[0273] Sub-step 1: Determine the number of first light-blocking strips 2 in the mask and the width a of the first light-blocking strips 2 .

[0274] In at least one embodiment of the present application, the step of S8033, obtaining a preset relationship between unknown parameters among the three parameters of the number of first light-blocking bars 2, the width a of the first light-blocking bars 2, and the minimum spacing b between two adjacent first light-blocking bars 2, and the size parameters of the spacers, includes:

[0275] Sub-step 1: Obtaining a preset relationship between the minimum spacing b between two adjacent first light-blocking strips 2 and the size parameters of the spacers; wherein the size parameters include a height PSH and a plane size.

[0276] In at least one embodiment of the present application, the height PSH of the spacer decreases as the minimum spacing b between two adjacent first light-blocking strips 2 increases, and the planar size of the spacer increases as the minimum spacing b between two adjacent first light-blocking strips 2 increases; the minimum spacing b between two adjacent first light-blocking strips 2 is the same as the minimum spacing e between two adjacent second light-blocking strips 3.

[0277] In at least one embodiment of the present application, the planar dimensions of the spacer include a dimension TX in a first direction and a dimension TY in a second direction, the first direction and the second direction are perpendicular; the dimension TX in the first direction increases as the minimum spacing b between two adjacent first light-blocking strips 2 increases, and the dimension TY in the second direction increases as the minimum spacing b between two adjacent first light-blocking strips 2 increases; the second direction is consistent with the extension direction of the first light-blocking strip 2, and the first direction is consistent with the extension direction of the second light-blocking strip 3.

[0278] The following describes the process of determining the specific specifications of the mask and the relationship between the various specifications of the mask and the size of the spacers.

[0279] Before determining the available pattern in the first gap of the mask, three preliminary pattern styles are provided as shown in Figures 18, 19 and 12; among them, the following description takes the use of the pattern in the first gap for preparing auxiliary spacers as an example.

[0280] The width of the light-blocking strip (also known as the grid) is a direct factor affecting the projection light flux, and significantly affects the height and size of the spacers formed after the organic material is photocured. This is because the width limit of the light-blocking strip depends on the resolution of the mask preparation process, and when the width of the light-blocking strip in the mask approaches the 1um resolution limit, the line width (width) uniformity of the spacers prepared by the mask will deteriorate, which is not conducive to improving the uniformity of large-size products. Therefore, in the early simulation calculations, the width of the light-blocking strip a ≥ 2.5um was used for simulation calculations.

[0281] When other parameters are fixed, the influence of the change in the width of the light-blocking strip on the height and size of the spacer PS is studied, and the results are shown in Figures 20A, 20B and 20C; wherein, Figure 20A is a curve showing the change in the height PSH of the spacer PS with the width a (Grid Width) of the light-blocking strip, Figure 20B is a curve showing the change in the size TX of the spacer PS in the first direction with the width a of the light-blocking strip, and Figure 20C is a curve showing the change in the size TY of the spacer PS in the second direction with the width a of the light-blocking strip; wherein, the curve marked Case1 is the result of calculation using the mask pattern shown in Figure 18, the curve marked Case2 is the result of calculation using the mask pattern shown in Figure 19, and the curve Case3 is the result of calculation using the mask pattern shown in Figure 12.

[0282] According to Figures 20A, 20B and 20C, it can be seen that the height PSH of the spacer PS changes nonlinearly with the shape of the light-blocking strip arrangement and the width a of the light-blocking strip; when the width a of the light-blocking strip is larger, the area occupied by the gray zone (Gray Zone) of the mask is smaller, and the heights of the spacers PS prepared by mask plates with different shapes are gradually close; it can be inferred that the width a of the light-blocking strip is a direct factor affecting the area of ​​the gray zone, and is related to the formation of the step difference of the spacer, where the step difference refers to the height difference between the main spacer and the auxiliary spacer.

[0283] Taking the width a of the light-blocking strip as 3.5 μm as an example, the influence of the grid spacing b of the light-blocking strips on the height and size of the spacer PS is further simulated and calculated. The simulation results are shown in Figures 21A, 21B and 21C; Figure 21A is a curve showing the change of the height PSH of the spacer PS with the grid spacing b of the light-blocking strips, Figure 21B is a curve showing the change of the size TX of the spacer PS in the first direction with the grid spacing b of the light-blocking strips, and Figure 21C is a curve showing the change of the size TY of the spacer PS in the second direction with the grid spacing b of the light-blocking strips; wherein, the curve marked Case1 is the result of calculation using the mask pattern shown in Figure 18, the curve marked Case2 is the result of calculation using the mask pattern shown in Figure 19, and the curve marked Case3 is the result of calculation using the mask pattern shown in Figure 12.

[0284] It can be seen from Figures 21A, 21B and 21C that in the curve marked Case 3, as the spacing b of the light-blocking strips changes, the height PSH of the spacer PS, the dimension TX of the spacer PS in the first direction and the dimension TY of the spacer PS in the second direction have the smallest change amplitude and the highest stability.

[0285] To further verify the accuracy of the above conclusions, spacers were actually fabricated using the mask patterns shown in FIG18 , the mask patterns shown in FIG19 , and the mask patterns shown in FIG12 , and the corresponding parameters were measured. FIG22 shows a top view of the spacers fabricated using the three mask patterns and a 3D scan. The top view of the spacer fabricated using the mask pattern shown in FIG12 shows a shape close to a rounded corner (or approximately circular), which is consistent with the TX and TY dimensions obtained by simulation calculation in FIG21B and FIG21C .

[0286] The measured results of the height and size of the spacer PS as the width a of the light-blocking strip changes are shown in Figures 23A, 23B and 23C, wherein Figure 23A is a curve showing the change of the height PSH of the spacer PS as the width a of the light-blocking strip (Grid Width), Figure 23B is a curve showing the change of the size TX of the spacer PS in the first direction as the width a of the light-blocking strip, and Figure 23C is a curve showing the change of the size TY of the spacer PS in the second direction as the width a of the light-blocking strip; wherein, the curve marked Case 1 is the measured result of the spacer prepared using the mask pattern shown in Figure 18, the curve marked Case 2 is the measured result of the spacer prepared using the mask pattern shown in Figure 19, and the curve Case 3 is the measured result of the spacer prepared using the mask pattern shown in Figure 12.

[0287] In the drawings of this specification, Grid Width represents the width a of the light-blocking strip, and Grid Spacing represents the spacing b between two adjacent light-blocking strips, which is referred to as light-blocking strip spacing b for short and will not be described in detail.

[0288] It can be seen from Figures 23A, 23B and 23C that the measured results are close to the simulation calculation results. Taking into account the changing rules of the height PSH of the spacer PS, the dimension TX of the spacer PS in the first direction and the dimension TY of the spacer PS in the second direction, the three parameters of the spacer prepared using case 3 (the mask pattern shown in Figure 12) change less with the width a of the light-blocking strip, and their stability is relatively high.

[0289] The measured results of the height and size of the spacer PS as the spacing b of the light-blocking strips changes are shown in Figures 24A, 24B, and 24C. Figure 24A is a curve showing the change of the height PSH of the spacer PS as the width a (Grid Width) of the light-blocking strips, Figure 24B is a curve showing the change of the size TX of the spacer PS in the first direction as the width a of the light-blocking strips, and Figure 24C is a curve showing the change of the size TY of the spacer PS in the second direction as the width a of the light-blocking strips. Among them, the curve marked Case 1 is the measured result of the spacer prepared using the mask pattern shown in Figure 18, the curve marked Case 2 is the measured result of the spacer prepared using the mask pattern shown in Figure 19, and the curve Case 3 is the measured result of the spacer prepared using the mask pattern shown in Figure 12.

[0290] It can be seen from Figures 24A, 24B and 24C that the measured results are close to the simulation calculation results. Taking into account the changing rules of the height PSH of the spacer PS, the dimension TX of the first direction of the spacer PS and the dimension TY of the second direction of the spacer PS, the three parameters of the spacers prepared using case1 (the mask pattern shown in Figure 18) and case3 (the mask pattern shown in Figure 12) change less with the width a of the light-blocking strip, and their stability is relatively high.

[0291] Based on the above simulation calculation and actual measurement results of the light-blocking strip width a and the light-blocking strip spacing b, it is determined that the three parameters of the spacer prepared using case 3 (the mask pattern shown in FIG12 ) have the highest stability.

[0292] Next, based on the mask pattern shown in FIG12, the effects of the number of light-blocking strips n, the width of the light-blocking strips a, and the spacing b between the light-blocking strips on the height PSH of the spacer PS, the dimension TX of the spacer PS in the first direction, and the dimension TY of the spacer PS in the second direction are studied. In the mask pattern shown in FIG12, n is 2 (two first light-blocking strips 2 and two second light-blocking strips 3), in the mask pattern shown in FIG13, n is 3 (three first light-blocking strips 2 and three second light-blocking strips 3), and in the mask pattern shown in FIG14, n is 4 (four first light-blocking strips 2 and four second light-blocking strips 3).

[0293] FIG25A shows a curve illustrating the effect of the width a of the light-blocking strips on the spacer height PSH when the number n of light-blocking strips and the spacing b of the light-blocking strips are determined. FIG25B shows a curve illustrating the effect of the width of the light-blocking strips on the first-direction dimension TX of the spacer when the number n of light-blocking strips and the spacing b of the light-blocking strips are determined. FIG25C shows a curve illustrating the effect of the width of the light-blocking strips on the second-direction dimension TY of the spacer when the number n of light-blocking strips and the spacing b of the light-blocking strips are determined. The five curves on the left in FIG25A, FIG25B and FIG25C are test results of spacers prepared using the mask (n=3) shown in FIG13, and the five curves on the right in FIG25A, FIG25B and FIG25C are test results of spacers prepared using the mask (n=4) shown in FIG14.

[0294] According to the results in FIG. 25A , FIG. 25B , and FIG. 25C , it can be seen that as the width a of the light-blocking strip increases, the spacer height PSH, the spacer dimension TX in the first direction, and the spacer dimension TY in the second direction all increase. In addition, as the spacing b between the light-blocking strips increases, the spacer height PSH decreases, while the spacer dimension TX in the first direction and the spacer dimension TY in the second direction both increase. When the number n of light-blocking strips increases (for example, from n=2 to n=3 and n=4), the ability of the mask pattern to adjust the light flux becomes stronger, and the adjustment range of the spacer height PSH can be increased from 0.3 μm (as shown in the mask of FIG. 12 ) to 0.8 μm (as shown in the masks of FIG. 13 and FIG. 14 ).

[0295] For example, when the light-blocking strip width a is 1.5 μm, the light flux can be effectively reduced by increasing the light-blocking strip spacing b. Compared with the characteristic values ​​of spacers made using a semi-transparent mask process in related technologies, this is equivalent to achieving a 12% semi-transparent effect.

[0296] For example, it can be seen from the results in FIG. 25B and FIG. 25C that the spacer first direction dimension TX and the spacer second direction dimension TY range from 10 μm to 60 μm, which can meet the size requirements of spacers in current display products.

[0297] Figure 26A shows a curve showing how the height PSH of the spacer changes with the spacing b of the light-blocking bars when the width a of the light-blocking bars is determined for the mask pattern shown in Figure 15; Figure 26B shows a curve showing how the dimension TX of the spacer in the first direction changes with the spacing b of the light-blocking bars when the width a of the light-blocking bars is determined for the mask pattern shown in Figure 15; Figure 26C shows a curve showing how the dimension TY of the spacer in the third direction changes with the spacing b of the light-blocking bars when the width a of the light-blocking bars is determined for the mask pattern shown in Figure 15.

[0298] According to the results in Figures 26A, 26B and 26C, it can be seen that for the spacers prepared by the mask pattern shown in Figure 15, the height PSH of the spacers decreases with the increase of the spacing b between the light-blocking strips, and the height PSH of the spacers decreases with the decrease of the width a of the light-blocking strips; the size TX of the spacers in the first direction increases with the increase of the spacing b between the light-blocking strips, and the size TX of the spacers in the first direction decreases with the decrease of the width a of the light-blocking strips; the size TY of the spacers in the second direction increases with the increase of the spacing b between the light-blocking strips, and the size TY of the spacers in the second direction decreases with the decrease of the width a of the light-blocking strips.

[0299] It should be noted that in current display products, a step difference is required between the main spacer and the auxiliary spacer, and the step difference range is set to 0.5μm to 0.7μm;

[0300] In addition, based on the optimization of the mask pattern, this manual only lists the data under the conditions of changes in the number of light-blocking strips n, the width of the light-blocking strips a, and the spacing between the light-blocking strips b / e. When the length of the light-blocking strips L and c / d change, TX / TY will also be significantly increased to form a larger support area, which will not be listed here one by one.

[0301] It should be noted that, in this application, the light-blocking strip spacing b=e is used as an example for description.

[0302] In order to facilitate practical operation, the above rules are simulated and calculated to obtain formulas to facilitate the determination of the relationship between the parameters of the mask and the size parameters of the spacers in different situations;

[0303] When the number of light-shielding strips n is fixed, with the change of the light-shielding strip width a and the light-shielding strip spacing b(e), the PS characteristic value shows a certain linear change trend, which is specifically expressed as follows: (1) n = 3, a = 3.5, PSH = -0.0269*b + 3.4030, TX = 2.3650*b + 16.6940, TY = 2.3096*b + 16.3310; (2) n = 3, a = 3.0, PSH = -0.0288*b + 3.3810, TX = 2.2604*b + 13.6510, TY = 2.2098*b + 13.8320; (3)n=3, a=2.5, PSH=-0.0309*b+3.3315, TX=2.0353*b+12.2460, TY=1.9893*b+12.0680; (4)n=3, a=2.0, PSH=-0.0216*b+3.1873, TX=2.0805*b+7.7562, TY=1.9865*b+8.3300;

[0304] (5)n=3, a=1.5, PSH=-0.0629*b+3.1782, TX=1.8273*b+4.4500, TY=1.9081*b+2.4918;

[0305] (6)n=4, a=3.5, PSH=-0.0246*b+3.3718, TX=3.6348*b+21.5530, TY=3.2129*b+23.4510; (7)n=4, a=3.0, PSH=-0.0276*b+3.3603, TX=3.3148*b+19.3440, TY=3.1471*b+20.1050; (8)n=4, a=2.5, PSH=-0.0301*b+3.3305, TX=3.0049*b+17.4940, TY=2.9698*b+17.0710; (9)n=4, a=2.0, PSH=-0.0364*b+3.2797, TX=2.9894*b+12.7240, TY=2.8358*b+13.2430; (10)n=4, a=1.5, PSH=-0.0529*b+3.1888, TX=2.9267*b+7.5587, TY=2.8798*b+7.0863;

[0306] When the number n / width a of light-blocking strips is determined, PSH, TX, TY and the spacing b between the light-blocking strips show a certain linear relationship. According to the above formula, when the specifications of the spacer PS (including height and plane dimensions) are determined, the number and detailed dimensions of the light-blocking strips in the required mask can be calculated accurately and quickly, which is convenient for the design and preparation of the mask.

[0307] In order to further study the comprehensive effect of the light-shielding strip width a and the light-shielding strip spacing b on the optical density (the amount of light actually irradiated on the spacer material film through the mask), the light-shielding strip width a and the light-shielding strip spacing b are further fitted based on the above calculation and analysis. According to the actual exposure parameter results, the slope and intercept of the linear relationship between the characteristic values ​​of the spacer (PSH, TX, TY) and the light-shielding strip spacing b can be expressed using the fourth-order formula of the light-shielding strip width a, which is specifically expressed as follows:

[0308] When n=3, it corresponds to the mask pattern shown in FIG13; (1) PSH=(-0.0491×a 4 +0.5243×a 3 -2.0569×a 2 +3.5057×a-2.2144)×b+(0.198× a 4 -2.0884×a 3 +7.9991×a2 -12.992×a+10.714) (2)TX=(-0.6397×a 4 +6.5153×a 3 -24.176×a 2 +38.851×a-20.802)×b+(5.9941× a 4 -59.638×a 3 +214.84×a 2 -324.79×a+179.18) (3)TY=(-0.4211×a 4 +4.1813×a 3 -15.026×a 2 +23.284×a-11.189)×b+(1.7219× a 4 -15.329×a 3 +46.016×a 2 -45.255×a+9.856)

[0309] When n=4, it corresponds to the mask pattern shown in FIG14; (1) PSH=(-0.0014×a 4 +0.0211×a 3 -0.1132×a 2 +0.2645×a-0.2591)×b+ (-0.0109×a 4 +0.1239×a 3 -0.5583×a 2 +1.2291×a+2.2385) (2)TX=(-0.4162×a 4 +4.1997×a 3 -15.198×a 2 +23.575×a-10.307)×b+(3.8691× a 4 -38.188×a 3 +134.51×a 2 -191.86×a+101.99) (3)TY=(-0.0134×a 4 -0.059×a 3 +1.035×a 2 -2.8714×a+5.1253)×b+(-0.2858× a 4 +4.6185×a 3 -25.438×a 2 +64.876×a-47.134);

[0310] It should be noted that, for the mask pattern provided in the embodiments of the present application, when n=3 or n=4, the characteristics of the first surface of the spacer prepared therefrom are significantly different from the characteristics of the first surface of the spacer prepared by using a semi-transparent mask (HTM) in the related art. The contour morphology of the spacer prepared in the related art is shown in Figure 1, and there is a single pit (also called a crater) in the middle of its first surface. However, the first surface of the spacer prepared by the mask provided in the embodiments of the present application has multiple protrusions, and the center position of the first surface is a protrusion; the specific structure of the spacer provided in the embodiments of the present application can refer to the specific description of the spacer in the previous text, and will not be repeated here.

[0311] It should also be noted that when n=3, corresponding to the mask pattern shown in FIG13 , when the ratio of the light-transmitting area to the light-blocking area of ​​the mask is 0.2, the number of protrusions on the intersection line of the first surface and the first cross section of the spacer produced by the mask pattern is 5, the number of protrusions is 4, the average pit depth is 0.03 μm, and the uniformity (3δ) of the spacer height PSH is 0.13 μm;

[0312] In the case of n=3, when the light-blocking strip width a and the light-blocking strip spacing b are adjusted, the number of protrusions and the average depth of the pits on the surface change;

[0313] For example, when the width a of the entire light blocking strip decreases, the number of protrusions on the intersection line between the first surface of the spacer and the first cross section increases. For example, the number of protrusions on the intersection line between the first surface of the spacer and the first cross section increases from 3 to 5.

[0314] Exemplarily, when the light-blocking strip spacing b increases, the average value of the pit depth decreases; for example, when the light-blocking strip spacing b increases from 4.0 μm to 12 μm, the average value of the pit depth (the step difference between the lowest point of the pit and the highest point of the protrusion) decreases from 0.08 μm to 0.02 μm.

[0315] When n=4, corresponding to the mask pattern shown in Figure 14, when the ratio of the light-transmitting area to the light-blocking area of ​​the mask is 0.21, the number of protrusions on the intersection line of the first surface and the first cross-section of the spacer prepared by the mask pattern is 7, the number of protrusions is 6, the average value of the pit depth is 0.04μm, and the uniformity (3δ) of the spacer height PSH is 0.15μm.

[0316] It should be noted that, for the mask patterns shown in Figures 13 and 14, the ratio of the light-transmitting area to the light-blocking area of ​​the mask is in the range of 0.1 to 0.3, for example, 0.11, 0.12, 0.13, 0.14, 0.15, 0.16, 0.17, 0.18, 0.19, 0.2, 0.21, 0.22, 0.23, 0.24, 0.25, and 0.28.

[0317] For the mask pattern shown in Figure 15, the ratio of the light-transmitting area to the light-blocking area of ​​the mask ranges from 0.22 to 2.05, for example, 0.23, 0.24, 0.25, 0.28, 0.3, 0.4, 0.5, 0.6, 0.65, 0.7, 0.75, 0.78, 0.8, 0.82, 0.85, 0.9, 1, 1.2, 1.5, 1.6, 1.7, 1.8, 1.9, and 2.0.

[0318] In addition, based on the calculation and analysis above, the light-shielding strip width a and the light-shielding strip spacing b are further fitted. According to the actual exposure parameter results, the slope and intercept of the linear relationship between the characteristic values ​​of the spacer (PSH, TX, TY) and the light-shielding strip spacing b can be expressed using the fourth-order formula of the light-shielding strip width a, as follows:

[0319] For the mask pattern shown in FIG15 : (1) PSH = (-0.0025×a 4 +0.0238×a 3 -0.081×a 2 +0.1199×a-0.1026)×b+(-0.0219× a 4 +0.2901×a 3 -1.4549×a 2 +3.2477×a+0.7139) (2)TX=(-0.0803×a 4 +0.789×a 3 -3.1103×a 2 +6.5309×a-3.7095)×b+(1.46×a 4 - 15.167×a 3 +59.915×a 2 -102.6×a+74.222) (3)TY=(0.0252×a 4 -0.3229×a 3 +1.3121×a 2 -1.4135×a+1.72)×b+(-0.0749×a 4 + 1.4349×a 3 -7.1753×a 2+17.678×a-6.273);

[0320] In addition, for the color filter pattern located in the peripheral area BB, it is necessary to set the ratio of the light-transmitting area to the light-blocking area in the pattern of the corresponding mask to be in the range of 0.545μm±0.15μm. At this time, the film thickness of the portion of the color filter pattern located in the peripheral area BB can be reduced by 0.1μm to 0.5μm relative to the portion of the color filter pattern located in the display area AA, thereby improving the light leakage and yellowing problems that may occur in the peripheral area BB mentioned above.

[0321] The specific structure of the mask used to prepare the color film pattern is not described here. The pattern of the mask of the color film pattern can refer to the pattern of the mask used to prepare the spacer in the previous article. In actual application, according to the thickness of the color film pattern, the parameters such as the number of light-blocking strips n, the width a of the light-blocking strips and the spacing b of the light-blocking strips in the above-mentioned mask pattern can be adjusted to meet the requirements for the thickness of the color film pattern of different products or different areas of the same product.

[0322] The above description is merely a specific embodiment of the present application, but the scope of protection of the present application is not limited thereto. Any changes or substitutions that can be easily conceived by a person skilled in the art within the technical scope disclosed in this application should be included in the scope of protection of this application. Therefore, the scope of protection of this application should be based on the scope of protection of the claims.

Claims

1. A display substrate, wherein: include: A substrate and an organic structure located on the substrate; The organic structure includes a first surface, the first surface being disposed away from the substrate; In a direction perpendicular to a plane where the substrate is located, a difference between a maximum distance between the first surface and the substrate and a minimum distance between the first surface and the substrate is less than or equal to 0.06 μm.

2. The display substrate according to claim 1, wherein: In a direction perpendicular to the plane where the substrate is located, the distance between the geometric center of the first surface and the substrate is greater than or equal to an average value of distances between each point on the first surface and the substrate.

3. The display substrate according to claim 1, wherein: The organic structure includes a spacer, and a surface of the spacer away from the substrate is the first surface.

4. The display substrate according to claim 1, wherein: The organic structure includes a color filter pattern, the display substrate includes a display area and a peripheral area surrounding the display area, and the size of the portion of the color filter pattern located in the peripheral area along a direction perpendicular to the plane where the substrate is located is smaller than or equal to the size of the portion of the color filter pattern located in the display area along a direction perpendicular to the plane where the substrate is located; The surface of the peripheral area in the region where the color filter pattern does not overlap with the adjacent color filter pattern and is far away from the substrate is the first surface.

5. The display substrate according to claim 3 or 4, wherein: A plurality of protrusions and a plurality of recesses are arranged on the first surface, and the recesses are located between at least two of the protrusions; the protrusion is arranged at the geometric center of the first surface.

6. The display substrate according to claim 5, wherein: The organic structure includes a first cross section, the first cross section is a cross section along a direction perpendicular to the plane where the substrate is located, and an intersection line between the first cross section and the first surface is parallel to a side edge of the first surface; The number of the protrusions arranged at the intersection line between the first surface and the first cross section is an odd number.

7. The display substrate according to claim 5, wherein: The organic structure includes a first cross section, the first cross section is a cross section along a direction perpendicular to the plane where the substrate is located, and an intersection line between the first cross section and the first surface passes through the geometric center of the first surface; The number of the protrusions arranged at the intersection line between the first surface and the first cross section is an odd number.

8. The display substrate according to claim 7, wherein: The orthographic projection of the first surface on the substrate is a quadrilateral; An intersection line between the first surface and the first cross section is parallel to a diagonal line of the quadrilateral; Alternatively, an intersection line between the first surface and the first cross section is parallel to a side of the quadrilateral.

9. The display substrate according to claim 5, wherein: The first surface includes a middle area and an edge area surrounding the middle area, and the geometric center of the first surface is located in the middle area; The maximum distance between the portion of the protrusion located in the middle region and the substrate is greater than or equal to the maximum distance between the portion of the protrusion located in the edge region and the substrate.

10. The display substrate according to claim 3, wherein: A plurality of protrusions are arranged at the outer contour position of the first surface, and the maximum distance between a portion of the protrusion located at the outer contour position of the first surface and the substrate is less than or equal to the maximum distance between other protrusions and the substrate.

11. The display substrate according to claim 3, wherein: The first surface includes a middle area and an edge area surrounding the middle area, and the geometric center of the first surface is located in the middle area; The curvature radius of a portion of the protrusion located in the middle area is smaller than or equal to the curvature radius of a portion of the protrusion located in the edge area.

12. The display substrate according to claim 8, wherein: When the organic structure includes a spacer, the spacer includes a side surface, the side surface is a curved surface, and an intersection line between the side surface and the first cross section is an arc line.

13. The display substrate according to claim 12, wherein: The radius of curvature of the arc gradually decreases in a direction away from the substrate.

14. The display substrate according to claim 8, wherein: In the case where the organic structure includes the spacer, in a direction parallel to the plane where the substrate is located, the distance between the vertices of two adjacent protrusions is equal to 1 / 2 to 1 / 6 of the size of the plane figure of the spacer along a preset direction, wherein the preset direction is the direction in which one of the two adjacent protrusions points to the other protrusion.

15. The display substrate according to claim 8, wherein: The number of the pits arranged at the intersection line of the first surface and the first cross section is an even number, and the number of the protrusions is greater than the number of the pits.

16. The display substrate according to claim 8, wherein: The number of the protrusions arranged at the intersection line of the first surface and the first cross section is any one of 3, 5 and 7.

17. The display substrate according to claim 1, wherein: Along a direction perpendicular to a plane where the substrate is located, a standard deviation of three times a dimension of the organic structure along a direction perpendicular to a plane where the substrate is located is less than or equal to 0.2 μm.

18. A display panel, wherein: The invention comprises a display substrate as claimed in any one of claims 1 to 17.

19. A mask, wherein: Used for preparing a display substrate as described in any one of claims 1 to 17, the mask plate includes a plurality of first slits, a plurality of first light-blocking strips arranged along the same direction and a plurality of second light-blocking strips arranged along the same direction are arranged in the first slits, the first light-blocking strips intersect with at least one of the second light-blocking strips, and the plane figure of the pattern in the first slit is a mirror-symmetrical figure.

20. The mask according to claim 19, wherein: The number of the first light-shielding strips and the number of the second light-shielding strips are the same.

21. The mask according to claim 20, wherein: The first light shielding strip and the second light shielding strip are vertically arranged.

22. The mask according to claim 21, wherein: The minimum distance between two adjacent first light-shielding strips is equal to the minimum distance between two adjacent second light-shielding strips, and the minimum distance between two adjacent first light-shielding strips is greater than the width of the first light-shielding strip.

23. The mask according to claim 22, wherein: The first light-shielding strip and the second light-shielding strip have the same structure and size. Any of the first light-shielding strips intersects with each of the second light-shielding strips, and any of the second light-shielding strips intersects with each of the first light-shielding strips.

24. The mask according to claim 22, wherein: The first light shielding strips include a first group, a second group and a third group, and the second light shielding strips include a first group, a second group and a third group; The first group of the first light-blocking bars and the second group of the first light-blocking bars respectively include two of the first light-blocking bars, the first group of the second light-blocking bars and the second group of the second light-blocking bars respectively include two of the second light-blocking bars, the third group of the first light-blocking bars includes one of the first light-blocking bars, and the third group of the second light-blocking bars includes one of the second light-blocking bars; The first light-blocking strip of the first group and the second light-blocking strip of the first group intersect to form a first closed ring, the first light-blocking strip of the second group and the second light-blocking strip of the second group intersect to form a second closed ring, the second closed ring is located inside the first closed ring, the first light-blocking strip of the third group and the second light-blocking strip of the third group intersect, and both intersect with the first closed ring and the second closed ring respectively, and the geometric center of the mask is located at the intersection of the first light-blocking strip of the third group and the second light-blocking strip of the third group.

25. The mask according to claim 23 or 24, wherein: The minimum distance between two adjacent first light-blocking strips is in the range of 2.5 μm to 14 μm, and the width of the first light-blocking strip is in the range of 1 μm to 4 μm.

26. A method for preparing a display substrate, wherein: The method comprises: providing a substrate; forming a thin film of a spacer material; The spacer material film is patterned using the mask as described in claim 23 to obtain a spacer; wherein the spacer comprises a first surface, the first surface is arranged away from the substrate, and a plurality of protrusions and a plurality of pits are arranged on the first surface, and the pit is located between at least two of the protrusions; wherein the protrusion is arranged at the geometric center of the first surface; in a direction perpendicular to the plane where the substrate is located, the first A difference between a maximum distance between the first surface and the substrate and a minimum distance between the first surface and the substrate is less than or equal to 0.06 μm.

27. The preparation method according to claim 26, wherein: The step of patterning the spacer material film using the mask as claimed in claim 23 to obtain the spacer comprises: Determining a preset height and a preset plane size of the spacer; Determine two of the three parameters of the number of the first light-blocking strips, the width of the first light-blocking strips, and the minimum spacing between two adjacent first light-blocking strips in the mask; wherein the number of the first light-blocking strips is the same as the number of the second light-blocking strips, the width of the first light-blocking strip is the same as the width of the second light-blocking strip, and the minimum spacing between two adjacent first light-blocking strips is the same as the minimum spacing between two adjacent second light-blocking strips; Obtaining a preset relationship between unknown parameters among three parameters, namely, the number of the first light shielding strips, the width of the first light shielding strips, and the minimum spacing between two adjacent first light shielding strips, and the size parameters of the spacers; Determining unknown parameters of the mask according to the size parameters of the spacer and the preset relationship; The specifications of the mask are determined according to the three parameters of the mask, and the spacer material film is patterned using the mask to obtain the spacer.

28. The preparation method according to claim 27, wherein The step of determining two of the three parameters of the number of the first light-blocking strips in the mask, the width of the first light-blocking strips, and the minimum spacing between two adjacent first light-blocking strips comprises: The number of the first light-blocking strips and the width of the first light-blocking strips in the mask are determined.

29. The preparation method according to claim 28, wherein The step of obtaining a preset relationship between unknown parameters among the three parameters of the number of the first light shielding strips, the width of the first light shielding strips, and the minimum distance between two adjacent first light shielding strips and the size parameters of the spacers comprises: Obtain the preset relationship between the minimum spacing between two adjacent first light shielding strips and the size parameters of the spacer; wherein the size parameters include height and plane size.

30. The preparation method according to claim 29, wherein: The height of the spacer decreases as the minimum spacing between two adjacent first light-blocking strips increases, and the plane size of the spacer increases as the minimum spacing between two adjacent first light-blocking strips increases; the minimum spacing between two adjacent first light-blocking strips is the same as the minimum spacing between two adjacent second light-blocking strips.

31. The preparation method according to claim 30, wherein: The planar dimensions of the spacer include dimensions in a first direction and dimensions in a second direction, the first direction and the second direction are perpendicular to each other; the dimension in the first direction increases as the minimum spacing between two adjacent first light-blocking strips increases, and the dimension in the second direction increases as the minimum spacing between two adjacent first light-blocking strips increases; the second direction is consistent with an extension direction of the first light-blocking strip, and the first direction is consistent with an extension direction of the second light-blocking strip.

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