Display substrate, preparation method thereof, display panel and mask plate

Abstract

A display substrate, a preparation method thereof, a display panel and a mask plate, and relate to the technical field of display. The display substrate comprises a substrate (1) and an organic structure on the substrate (1). The organic structure comprises a first surface (M1) which is arranged away from the substrate (1). In a direction perpendicular to the plane where the substrate (1) is located, the difference between the maximum distance between the first surface (M1) and the substrate (1) and the minimum distance between the first surface (M1) and the substrate (1) is less than or equal to 0.06 mu m. The first surface (M1) of the organic structure on the display substrate has a higher flatness. Since the difference between the maximum distance between the first surface (M1) and the substrate (1) and the minimum distance between the first surface (M1) and the substrate (1) is less than or equal to 0.06 mu m, the organic structure can play a better supporting role in the case that the display panel prepared by the display substrate is pressed.

Description

Technical Field

[0001] This application relates to the field of display technology, and in particular to a display substrate and its preparation method, a display panel, and a photomask. Background Technology

[0002] A photomask is a patterned master used in the field of photolithography. In the exposure process, the pattern of the photomask is transferred to the corresponding product carrier.

[0003] In related technologies, a half-tone mask is often used to simultaneously fabricate the main spacer (Main PS) and the sub spacer (Sub PS) to reduce the number of processing steps. Specifically, the main spacer is fabricated using a full-tone pattern in the half-tone mask, and the sub spacer is fabricated using a half-tone pattern in the half-tone mask, thus creating a step difference between the main spacer and the sub spacer. However, the flatness of the upper surface of the spacer in related technologies is relatively low, which reduces the supporting effect of the spacer. Summary of the Invention

[0004] The embodiments of this application adopt the following technical solutions:

[0005] In a first aspect, at least one embodiment of this application provides a display substrate, comprising:

[0006] Substrate and organic structures located on said substrate;

[0007] The organic structure includes a first surface disposed away from the substrate;

[0008] In a direction perpendicular to the plane containing the substrate, the difference between the maximum distance between the first surface and the substrate and the minimum distance between the first surface and the substrate is less than or equal to 0.06 μm.

[0009] In at least one embodiment of this application, in a direction perpendicular to the plane where the substrate is located, the distance from the geometric center of the first surface to the substrate is greater than or equal to the average distance from each point on the first surface to the substrate.

[0010] In at least one embodiment of this application, the organic structure includes a spacer, the surface of which on the side away from the substrate is the first surface.

[0011] In at least one embodiment of this application, the organic structure includes a color filter pattern, the display substrate includes a display area and a peripheral area surrounding the display area, and the size of the portion of the color filter pattern located in the peripheral area along a direction perpendicular to the plane of the substrate is less than or equal to the size of the portion of the color filter pattern located in the display area along a direction perpendicular to the plane of the substrate.

[0012] The surface on the side away from the substrate in the area where the color filter pattern in the peripheral region does not overlap with the adjacent color filter pattern is the first surface.

[0013] In at least one embodiment of this application, a plurality of protrusions and a plurality of pits are provided on the first surface, the pits being located between at least two of the protrusions; the protrusions are provided at the geometric center of the first surface.

[0014] In at least one embodiment of this application, the organic structure includes a first cross section, which is a cross section along a direction perpendicular to the plane of the substrate, and the intersection line of the first cross section and the first surface is parallel to the side of the first surface;

[0015] The number of protrusions provided at the intersection line of the first surface and the first cross section is odd.

[0016] In at least one embodiment of this application, the organic structure includes a first cross section, which is a cross section along a direction perpendicular to the plane where the substrate is located, and the intersection line of the first cross section and the first surface passes through the geometric center of the first surface;

[0017] The number of protrusions provided at the intersection line of the first surface and the first cross section is odd.

[0018] In at least one embodiment of this application, the orthographic projection pattern of the first surface on the substrate is a quadrilateral;

[0019] The line of intersection of the first surface and the first cross section is parallel to the diagonal of the quadrilateral;

[0020] Alternatively, the line of intersection of the first surface and the first cross section is parallel to the side of the quadrilateral.

[0021] In at least one embodiment of this application, the first surface includes an intermediate region and an edge region surrounding the intermediate region, wherein the geometric center of the first surface is located in the intermediate region;

[0022] The maximum distance between the portion of the protrusion located in the middle region and the substrate is greater than or equal to the maximum distance between the portion of the protrusion located in the edge region and the substrate.

[0023] In at least one embodiment of this application, a plurality of protrusions are provided at the outer contour position of the first surface, and the maximum distance between the portion of the protrusion at the outer contour position of the first surface and the substrate is less than or equal to the maximum distance between the other protrusions and the substrate.

[0024] In at least one embodiment of this application, the first surface includes an intermediate region and an edge region surrounding the intermediate region, wherein the geometric center of the first surface is located in the intermediate region;

[0025] The radius of curvature of the portion of the protrusion located in the middle region is less than or equal to the radius of curvature of the portion of the protrusion located in the edge region.

[0026] In at least one embodiment of this application, when the organic structure includes a spacer, the spacer includes a side surface, the side surface is an arc surface, and the intersection line of the side surface and the first cross section is an arc.

[0027] In at least one embodiment of this application, the radius of curvature of the arc gradually decreases along the direction away from the substrate.

[0028] In at least one embodiment of this application, when the organic structure includes the spacer, the distance between the vertices of two adjacent protrusions in a direction parallel to the plane of the substrate is equal to 1 / 2 to 1 / 6 of the size of the planar pattern of the spacer in a predetermined manner, wherein the predetermined direction is the direction in which one of the two adjacent protrusions points to the other protrusion.

[0029] In at least one embodiment of this application, the number of the pits provided at the intersection line of the first surface and the first cross section is an even number, and the number of the protrusions is greater than the number of the pits.

[0030] In at least one embodiment of this application, the number of protrusions provided at the intersection line of the first surface and the first cross section is any one of 3, 5, and 7.

[0031] In at least one embodiment of this application, the standard deviation of the size of the organic structure along a direction perpendicular to the plane of the substrate is less than or equal to 0.2 μm.

[0032] Secondly, embodiments of this application provide a display panel including a display substrate as described in any one of the first aspects.

[0033] Thirdly, embodiments of this application provide a photomask for preparing a display substrate as described in any one of the first aspects. The photomask includes a plurality of first slits, in which a plurality of first light-blocking strips arranged in the same direction and a plurality of second light-blocking strips arranged in the same direction are disposed. The first light-blocking strips and at least one second light-blocking strip intersect each other, and the planar pattern of the pattern in the first slit is a mirror-symmetric pattern.

[0034] In at least one embodiment of this application, the number of the first light-blocking strip and the second light-blocking strip are the same.

[0035] In at least one embodiment of this application, the first light-blocking strip and the second light-blocking strip are arranged vertically.

[0036] In at least one embodiment of this application, the minimum spacing between two adjacent first light-blocking strips is equal to the minimum spacing between two adjacent second light-blocking strips, and the minimum spacing between two adjacent first light-blocking strips is greater than the width of the first light-blocking strip.

[0037] In at least one embodiment of this application, the first light-blocking strip and the second light-blocking strip have the same structure and size, and any first light-blocking strip and each second light-blocking strip intersect, and any second light-blocking strip and each first light-blocking strip intersect.

[0038] In at least one embodiment of this application, the first light-blocking strip includes a first group, a second group, and a third group, and the second light-blocking strip includes a first group, a second group, and a third group;

[0039] The first group of first light-blocking strips and the second group of first light-blocking strips each include two first light-blocking strips, the first group of second light-blocking strips and the second group of second light-blocking strips each include two second light-blocking strips, the third group of first light-blocking strips includes one first light-blocking strip, and the third group of second light-blocking strips includes one second light-blocking strip;

[0040] The first group of first light-blocking strips and the first group of second light-blocking strips intersect to form a first closed ring. The second group of first light-blocking strips and the second group of second light-blocking strips intersect to form a second closed ring. The second closed ring is located inside the first closed ring. The third group of first light-blocking strips and the third group of second light-blocking strips intersect, and both intersect with the first closed ring and the second closed ring, respectively. The geometric center of the photomask is located at the intersection of the third group of first light-blocking strips and the third group of second light-blocking strips.

[0041] In at least one embodiment of this application, the minimum spacing between two adjacent first light-blocking strips ranges from 2.5 μm to 14 μm, and the width of the first light-blocking strip ranges from 1 μm to 4 μm.

[0042] Fourthly, embodiments of this application provide a method for fabricating a display substrate, the method comprising:

[0043] Provide substrate;

[0044] Forming a diaphragm material film;

[0045] The spacer material film is patterned using a photomask as described in the first aspect to obtain a spacer; wherein the spacer includes a first surface disposed away from the substrate, and the first surface is provided with a plurality of protrusions and a plurality of pits, the pits being located between at least two of the protrusions; wherein the protrusions are disposed at the geometric center of the first surface; and in a direction perpendicular to the plane of the substrate, the difference between the maximum distance between the first surface and the substrate and the minimum distance between the first surface and the substrate is less than or equal to 0.06 μm.

[0046] In at least one embodiment of this application, the step of patterning the spacer material film using a photomask as described in the first aspect to obtain the spacer includes:

[0047] Determine the preset height and preset planar dimensions of the spacer;

[0048] Determine two of the following three parameters in the photomask: the number of first light-blocking strips, the width of the first light-blocking strips, and the minimum spacing between two adjacent first light-blocking strips; wherein the number of first light-blocking strips is the same as the number of second light-blocking strips, the width of the first light-blocking strips is the same as the width of the second light-blocking strips, and the minimum spacing between two adjacent first light-blocking strips is the same as the minimum spacing between two adjacent second light-blocking strips.

[0049] Obtain a preset relationship between the unknown parameter among the three parameters—the number of the first light-blocking strips, the width of the first light-blocking strips, and the minimum spacing between two adjacent first light-blocking strips—and the size parameter of the spacer.

[0050] Based on the dimensional parameters of the spacer and the preset relationship, determine the unknown parameters of the mask.

[0051] The specifications of the mask are determined based on the three parameters of the mask, and then the mask is used to pattern the spacer material film to obtain the spacer.

[0052] In at least one embodiment of this application, the step of determining two of the three parameters—the number of the first light-blocking strips in the photomask, the width of the first light-blocking strips, and the minimum spacing between two adjacent first light-blocking strips—includes:

[0053] Determine the number and width of the first light-blocking strips in the photomask.

[0054] In at least one embodiment of this application, the step of obtaining a preset relationship between the unknown parameter among the three parameters—the number of the first light-blocking strips, the width of the first light-blocking strips, and the minimum spacing between two adjacent first light-blocking strips—and the size parameter of the spacer includes:

[0055] Obtain the preset relationship between the minimum spacing between two adjacent first light-blocking strips and the size parameters of the spacer; wherein the size parameters include height and planar dimensions.

[0056] In at least one embodiment of this application, the height of the spacer decreases as the minimum distance between two adjacent first light-blocking strips increases, and the planar dimension of the spacer increases as the minimum distance between two adjacent first light-blocking strips increases; the minimum distance between two adjacent first light-blocking strips is the same as the minimum distance between two adjacent second light-blocking strips.

[0057] In at least one embodiment of this application, the planar dimensions of the spacer include dimensions in a first direction and dimensions in a second direction, wherein the first direction and the second direction are perpendicular; the dimension in the first direction increases as the minimum distance between two adjacent first light-blocking strips increases, and the dimension in the second direction increases as the minimum distance between two adjacent first light-blocking strips increases; the second direction is consistent with the extension direction of the first light-blocking strip, and the first direction is consistent with the extension direction of the second light-blocking strip.

[0058] The above description is only an overview of the technical solution of this application. In order to better understand the technical means of this application and to implement it in accordance with the contents of the specification, and to make the above and other objects, features and advantages of this application more obvious and understandable, the following are specific embodiments of this application. Attached Figure Description

[0059] To more clearly illustrate the technical solutions in the embodiments or related technologies of this application, the accompanying drawings used in the description of the embodiments or related technologies will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0060] Figure 1 A cross-sectional view of a spacer in the related art provided for embodiments of this application;

[0061] Figure 2 A schematic diagram of the structure of a display substrate provided for an embodiment of this application;

[0062] Figure 3 A schematic diagram of another display substrate structure provided for an embodiment of this application;

[0063] Figure 4 Figure (1) is a top view of a spacer provided in an embodiment of this application. Figure 4 The middle (2) figure is Figure 4 Figure (1) is a cross-sectional view along the A1A2 direction. Figure 4 The middle (3) figure is Figure 4 A magnified view of a portion of Figure (2);

[0064] Figure 5 Figure (1) is a top view of another spacer provided in an embodiment of this application. Figure 5 The middle (2) figure is Figure 4 Figure (1) is a cross-sectional view along the A3A4 direction. Figure 5 The middle (3) figure is Figure 5 A magnified view of a portion of Figure (2);

[0065] Figures 6-11 Cross-sectional views of six other spacers provided for embodiments of this application;

[0066] Figures 12-15 Schematic diagrams of the structures of four photomasks provided for embodiments of this application;

[0067] Figure 16 A flowchart illustrating a method for preparing a spacer material, provided for an embodiment of this application;

[0068] Figure 17 A flowchart illustrating another method for preparing a spacer material provided in an embodiment of this application;

[0069] Figures 18-19 Two more schematic diagrams of the structure of photomasks provided for embodiments of this application;

[0070] Figure 20A Simulation curves showing the effect of varying light-blocking strip width on the height of the spacer in three different photomasks provided for embodiments of this application;

[0071] Figure 20B Simulation curves showing the effect of varying light-blocking strip widths on the dimensions of the spacer in the first direction in three different photomasks provided for embodiments of this application;

[0072] Figure 20C Simulation curves showing the effect of varying light-blocking strip widths on the second-direction dimensions of the spacer in three different photomasks provided for embodiments of this application;

[0073] Figure 21A Simulation curves showing the effect of varying light-blocking strip spacing on the height of the spacer in three different photomasks provided for embodiments of this application;

[0074] Figure 21B Simulation curves showing the effect of variations in the spacing of the light-blocking strips on the dimensions of the spacer in the first direction in three different photomasks provided for embodiments of this application;

[0075] Figure 21C Simulation curves showing the effect of variations in the spacing of the light-blocking strips on the second-direction dimensions of the spacer in three different photomasks provided for embodiments of this application;

[0076] Figure 22 Top view and three-dimensional perspective view of septa prepared by three different photomasks provided for embodiments of this application, wherein Case 1, Case 2 and Case 3 are three different photomasks;

[0077] Figure 23A Measured curves showing the effect of varying light-blocking strip width on the height of the spacer in three different photomasks provided for embodiments of this application;

[0078] Figure 23B Measured curves showing the effect of varying widths of the light-blocking strips on the dimensions of the spacer in the first direction in three different photomasks provided for embodiments of this application;

[0079] Figure 23C Measured curves showing the effect of varying light-blocking strip width on the second-direction dimensions of the spacer in three different photomasks provided for embodiments of this application;

[0080] Figure 24A Measured curves showing the effect of varying light-blocking strip spacing on the height of the spacer in three different photomasks provided for embodiments of this application;

[0081] Figure 24B Measured curves showing the effect of varying light-blocking strip spacing on the dimensions of the spacer in the first direction in three different photomasks provided for embodiments of this application;

[0082] Figure 24C Measured curves showing the effect of varying light-blocking strip spacing on the second-direction dimensions of the spacer in three different photomasks provided for embodiments of this application;

[0083] Figure 25A The influence curves of the number of light-blocking strips, the spacing between light-blocking strips, and the width of the light-blocking strips on the height of the spacer in the same photomask provided for the embodiments of this application;

[0084] Figure 25B The influence curves of the number of light-blocking strips, the spacing between light-blocking strips, and the width of the light-blocking strips on the first direction dimension of the spacer in the same photomask provided for the embodiments of this application;

[0085] Figure 25C The influence curves of the number of light-blocking strips, the spacing between light-blocking strips, and the width of the light-blocking strips on the second-direction dimensions of the spacer in the same photomask provided for embodiments of this application;

[0086] Figure 26A Curve showing the effect of the width of the light-blocking strip on the height of the spacer in the same photomask provided for embodiments of this application;

[0087] Figure 26B Curve showing the influence of the width of the light-blocking strip on the dimension of the spacer in the first direction in the same type of photomask provided for embodiments of this application;

[0088] Figure 26C The curve showing the effect of the width of the light-blocking strip on the second-direction dimension of the spacer in the same photomask provided for embodiments of this application. Detailed Implementation

[0089] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0090] In the embodiments of this application, unless otherwise stated, "a plurality of" means two or more; the orientation or positional relationship indicated by the term "above" is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing this application and simplifying the description, and is not intended to indicate or imply that the structure or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this application.

[0091] Unless the context otherwise requires, throughout the specification and claims, the term "comprising" is interpreted as open-ended and encompassing, meaning "including, but not limited to." In the description of the specification, terms such as "one embodiment," "some embodiments," "exemplary embodiment," "example," "specific example," or "some examples" are intended to indicate that a particular feature, structure, material, or characteristic associated with that embodiment or example is included in at least one embodiment or example of this application. The illustrative representations of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific feature, structure, material, or characteristic may be included in any suitable manner in any one or more embodiments or examples.

[0092] In the embodiments of this application, the terms "first" and "second" are used to distinguish identical or similar items with essentially the same function and effect, only for the purpose of clearly describing the technical solution of the embodiments of this application, and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated.

[0093] The features such as "parallel," "perpendicular," and "identical" used in the embodiments of this application include features in the strict sense of "parallel," "perpendicular," and "identical," as well as cases where "approximately parallel," "approximately perpendicular," and "approximately identical" include a certain degree of error. Taking into account measurement and errors associated with the measurement of a specific quantity (e.g., limitations of the measurement system), they represent the acceptable deviation range for a specific value as determined by a person skilled in the art. For example, "approximately" can mean within one or more standard deviations, or within 10% or 5% of said value. "At least one" refers to one or more, and "more than one" refers to at least two.

[0094] In this application's embodiments, "same layer" refers to the relationship between multiple film layers formed from the same material after undergoing the same step (e.g., a patterning process). Here, "same layer" does not always mean that multiple film layers have the same thickness or that multiple film layers have the same height in a cross-sectional view.

[0095] The polygons used in this specification are not strictly defined; they can be approximate triangles, parallelograms, trapezoids, pentagons, or hexagons, and may have minor deformations due to fluctuations in the manufacturing process or tolerances.

[0096] With the continuous development of display technology, people's pursuit of display quality and reliability of display products is also increasing. In related technologies, the center of the upper surface of the auxiliary spacer often has a large and deep recess. When the display product is subjected to external force and the main spacer is compressed, the auxiliary spacer is needed to provide auxiliary support to prevent damage. However, as... Figure 1 As shown, due to a large and deep recess at the center of the upper surface of the auxiliary spacer, the contact area between the upper surface of the auxiliary spacer and the upper substrate of the display product is insufficient, reducing the supporting effect of the auxiliary spacer. In severe cases, this may lead to damage to both the main spacer and the auxiliary spacer, resulting in display abnormalities in the display product. It should be noted that... Figure 1 The outline in the figure is a cross section of the auxiliary spacer along a direction perpendicular to the plane of the substrate of the display substrate, and the cross section passes through the geometric center of the upper surface of the auxiliary spacer. The geometric center of the upper surface of the auxiliary spacer is located in the area where the pit is located. For example, the lowest point A of the pit can coincide with the geometric center, and the highest point B of the upper surface of the auxiliary spacer can be located at the edge of the pit.

[0097] Given the current structure and support effect of auxiliary spacers, there is an urgent need to provide a new structure for spacers to improve their support function and extend their service life in display products.

[0098] At least one embodiment of this application provides a display substrate, including:

[0099] Substrate 1 and the organic structure located on substrate 1;

[0100] The organic structure includes a first surface M1, which is disposed away from the substrate 1;

[0101] In the direction perpendicular to the plane where the substrate 1 is located, the difference between the maximum distance between the first surface M1 and the substrate 1 and the minimum distance between the first surface M1 and the substrate 1 is less than or equal to 0.06 μm.

[0102] In an exemplary embodiment, the organic structure may include a spacer; or, the organic structure may include a color filter pattern.

[0103] The type of spacer is not limited here. For example, the spacer can be a main spacer (MainPS); or a sub spacer (SubPS).

[0104] The specific color of the above-mentioned color filter pattern is not limited here. For example, the color filter pattern may include at least one of red color filter pattern, green color filter pattern and blue color filter pattern.

[0105] For example, the above-described organic structure may include a color filter pattern located in the display area AA, and / or the above-described organic structure may include a color filter pattern located in the peripheral area BB, wherein the peripheral area BB is disposed around the display area AA.

[0106] For example, the aforementioned organic structure includes a color filter pattern located in the display area AA;

[0107] For example, the aforementioned organic structure includes a color filter pattern located in the peripheral region BB;

[0108] For example, the aforementioned organic structure includes both the color filter pattern located in the display area AA and the color filter pattern located in the peripheral area BB.

[0109] The material of the substrate 1 is not limited here. For example, the material of the substrate 1 can be a rigid material, such as glass; or the material of the substrate 1 can be a flexible material, such as polyimide.

[0110] The fabrication process of the above organic structure is not limited here. For example, the above organic structure can be fabricated using a semi-permeable mask; or, the above organic structure can be fabricated using a grayscale mask.

[0111] The aforementioned first surface M1 refers to the surface in the organic structure that is farther away from the substrate 1 of the display substrate.

[0112] The shape of the planar pattern of the first surface M1 is not limited here; the planar pattern of the first surface M1 refers to the pattern of the orthographic projection of the first surface M1 onto the substrate 1.

[0113] For example, the shape of the planar pattern of the first surface M1 may include polygons, arcs, and combinations of polygons and arcs;

[0114] For example, polygons can include squares, rectangles, rhombuses, and pentagons; arcs can include circles and ellipses; however, polygons in this specification are not strictly defined, and squares, rectangles, rhombuses, and pentagons can all have minor deformations due to tolerances;

[0115] The aforementioned deformations may include rounded corner deformations. For example, a square can be deformed into a rounded square, and a rectangle can be deformed into a rounded square. Other shapes may also have similar deformations, which will not be elaborated here.

[0116] In the direction perpendicular to the plane where the substrate 1 is located, the difference between the maximum distance between the first surface M1 and the substrate 1 and the minimum distance between the first surface M1 and the substrate 1 is less than or equal to 0.06 μm.

[0117] For example, the difference between the maximum distance between the first surface M1 and the substrate 1 and the minimum distance between the first surface M1 and the substrate 1 in the direction perpendicular to the plane of the substrate 1 can be 0.015μm, 0.020μm, 0.023μm, 0.025μm, 0.030μm, 0.033μm, 0.035μm, 0.040μm, 0.041μm, 0.045μm, 0.050μm, or 0.055μm.

[0118] Due to differences in the design and fabrication process of the organic structure, the first surface M1 is not an ideal plane. The distances from various positions on the first surface M1 to the substrate 1 are not completely equal. In the embodiments of this application, the difference between the maximum distance between the first surface M1 and the substrate 1 and the minimum distance between the first surface M1 and the substrate 1 is less than or equal to 0.06 μm. That is, the first surface M1 of the organic structure has high flatness. When the display panel fabricated on the display substrate is pressed, the organic structure can play a better supporting role, thereby improving the quality of the display panel.

[0119] In at least one embodiment of this application, in a direction perpendicular to the plane where the substrate 1 is located, the distance between the geometric center of the first surface M1 and the substrate 1 is greater than or equal to the average distance between each point on the first surface M1 and the substrate 1.

[0120] Compared to the related technologies where a large and deep pit often exists at the center of the upper surface of the spacer, in at least one embodiment of this application, by setting the distance between the geometric center of the first surface M1 and the substrate 1 in a direction perpendicular to the plane of the substrate 1 to be greater than or equal to the average distance between all points on the first surface M1 and the substrate 1, there is no pit at the center of the first surface M1 of the organic structure, which can improve the flatness near the center of the first surface M1 of the organic structure, thereby improving the quality of the organic structure.

[0121] In at least one embodiment of this application, the organic structure includes a spacer PS, and the surface of the spacer PS away from the substrate 1 is a first surface M1.

[0122] For example, the spacer can be a main spacer (Main PS); or, for another example, a subspacer (SubPS). The display substrate provided in the embodiments of this application is illustrated using the PS as a subspacer.

[0123] In at least one embodiment of this application, the organic structure includes a color filter pattern (e.g., CF-R, CF-G, CF-B), and the display substrate includes a display area AA and a peripheral area BB surrounding the display area AA. The size of the portion of the color filter pattern located in the peripheral area BB along the direction perpendicular to the plane of the substrate 1 is less than or equal to the size of the portion of the color filter pattern located in the display area AA along the direction perpendicular to the plane of the substrate 1. The surface of the region in the peripheral area BB that does not overlap with the adjacent color filter pattern, on the side away from the substrate 1, is the first surface M1.

[0124] For example, the dimension of the portion of the color filter pattern located in the peripheral area BB along the direction perpendicular to the plane of the substrate 1 is smaller than the dimension of the portion of the color filter pattern located in the display area AA along the direction perpendicular to the plane of the substrate 1, that is, the thickness of the portion of the color filter pattern located in the peripheral area BB is smaller than the thickness of the portion of the color filter pattern located in the display area AA.

[0125] In an exemplary embodiment, the color filter pattern may include at least one of a red color filter pattern, a green color filter pattern, and a blue color filter pattern.

[0126] For example, the color film pattern can include red color film pattern, green color film pattern and blue color film pattern at the same time, and the red color film pattern, green color film pattern and blue color film pattern are set in sequence;

[0127] The portion of the color filter pattern located in the peripheral area BB, along with the spacers and black matrix, can be used to prevent the alignment liquid from spreading outwards. Specifically, when the alignment liquid is applied, it covers the color filter pattern in the display area AA. However, due to the fluidity of the alignment liquid, it spreads outwards into the peripheral area BB, even reaching the location of the frame adhesive, which severely reduces the adhesion performance of the frame adhesive. To prevent the alignment liquid from spreading outwards, a black matrix, color filter pattern, and spacers are placed in a local area of ​​the peripheral area BB near the display area AA. The overlapping arrangement of the black matrix, color filter pattern, and spacers prevents the alignment liquid from flowing outwards.

[0128] For example, such as Figure 2 As shown, the peripheral area BB is provided with a black matrix BM, a color filter pattern (e.g., CF-R, CF-G, CF-B) and spacers PS located on the substrate 1. When the thickness of the black matrix, color filter pattern and spacers in the peripheral area BB corresponds to the same thickness as that in the display area AA, since the color filter pattern in the peripheral area BB is set on the black matrix BM, while the color filter pattern in the display area AA is set between the black matrices BM, the distance between the upper surface of the spacers in the peripheral area BB and the substrate 1 is greater than the distance between the upper surface of the spacers in the display area AA and the substrate 1. This can easily cause the display panel to yellow at the edges or leak light at the edges.

[0129] To ensure that the distance between the upper surface of the spacer in the peripheral area BB and the substrate 1 is equal to the distance between the upper surface of the spacer in the display area AA and the substrate 1, as follows: Figure 3 As shown, the size of the portion of the color filter pattern located in the peripheral area BB along the direction perpendicular to the plane of the substrate 1 can be set to be less than or equal to the size of the portion of the color filter pattern located in the display area AA along the direction perpendicular to the plane of the substrate 1. This ensures the quality of the display panel fabricated from the display substrate.

[0130] exist Figure 3 The diagram shows a schematic of the mask used to prepare the display substrate. The part of the color filter pattern located in the peripheral area BB can be prepared using the grayscale pattern in the grayscale mask (GTM), and the part of the color filter pattern located in the display area AA can be prepared using the fully transparent pattern in the grayscale mask.

[0131] Of course, the portion of the color filter pattern located in the peripheral area BB can be prepared using a semi-transparent pattern in a halftone mask (HTM), while the portion of the color filter pattern located in the display area AA can be prepared using a fully transparent pattern in a halftone mask.

[0132] It should be noted that when the organic structure includes a color filter pattern located in the peripheral region BB, due to normal fluctuations in the precision of the fabrication process and the alignment precision of the equipment, two adjacent color filter patterns may overlap. For example, when a blue color filter pattern is formed first and then a green color filter pattern adjacent to the blue color filter pattern is formed, the green color filter pattern may partially cover the blue color filter pattern. In the embodiments of this application, the first surface M1 refers to the surface away from the substrate 1 in the region that does not overlap with the adjacent color filter pattern. The accompanying drawings provided in the embodiments of this application are drawn with the example of two adjacent color filter patterns not overlapping.

[0133] In at least one embodiment of this application, a plurality of protrusions and a plurality of pits are provided on the first surface M1, with the pits located between at least two protrusions; a protrusion is provided at the geometric center of the first surface M1.

[0134] For example, in cases where the organic structure includes septa, such as Figure 4 (2) Figure and Figure 4 As shown in Figure (3), the first surface M1 of the spacer has multiple protrusions and multiple recesses, and a protrusion is located at the geometric center of the first surface M1. Figure 4 The middle (2) figure is Figure 4 Figure (1) shows a cross-sectional view along the A1A2 direction, and Figure 4 Figure (2) is a cross-sectional view of the spacer along the direction perpendicular to the plane of substrate 1 and passing through the geometric center of the first surface M1. Figure 4 The middle (3) figure is Figure 4 (2) A magnified view of the area marked in the box in the middle of the figure.

[0135] For example, in the case where the organic structure includes a color filter pattern located in the peripheral region BB, a plurality of protrusions and a plurality of pits are provided on the first surface M1 of the color filter pattern and a protrusion is provided at the geometric center of the first surface M1. The first surface M1 of the color filter pattern is the surface away from the substrate 1 in the region that does not overlap with the adjacent color filter pattern.

[0136] In at least one embodiment of this application, the structure of the first surface M1 of the color filter pattern located in the display area AA may be the same as the structure of the first surface M1 of the color filter pattern located in the peripheral area BB.

[0137] The dimensions of the aforementioned protrusions and depressions are not limited here.

[0138] For example, on the first surface M1 of the spacer, the size range of the protrusion along the direction parallel to the plane of the substrate 1 can be 5μm to 20μm, and the size range of the protrusion along the direction perpendicular to the plane of the substrate 1 can be 0.02μm to 0.06μm; on the first surface M1 of the spacer, the size range of the pit along the direction parallel to the plane of the substrate 1 and the size range along the direction perpendicular to the plane of the substrate 1 are similar to the size range of the protrusion, and will not be repeated here;

[0139] For example, on the first surface M1 of the spacer, the protrusions along the direction parallel to the plane containing the substrate 1 can have dimensions of 12μm, 11.5μm, 11.2μm, 11.0μm, 10.8μm, 10.3μm, 10μm, 9.8μm, 9.5μm, 9.2μm, 9.0μm, 8.8μm, 8.5μm, 8.3μm, 8.0μm, 7.5μm, 7.0μm, 6.8μm, 6.5μm, 6.0μm, 5.8μm, and 5.5μm.

[0140] For example, on the first surface M1 of the spacer, the size of the protrusion along the direction perpendicular to the plane of the substrate 1 can be 0.03μm, 0.035μm, 0.038μm, 0.040μm, 0.043μm, 0.045μm, 0.048μm, 0.050μm, 0.052μm, 0.055μm, or 0.058μm.

[0141] For example, for the first surface M1 of the color filter pattern located in the peripheral area BB, the size of the protrusion in the direction parallel to the plane of the substrate 1 can be 5μm to 30μm, and the size of the protrusion in the direction perpendicular to the plane of the substrate 1 can be 0.005μm to 0.06μm.

[0142] For example, on the first surface M1 of the color filter pattern located in the peripheral region BB, the protrusions along the direction parallel to the plane where the substrate 1 is located can have dimensions of 26μm, 25μm, 24μm, 23μm, 22μm, 20μm, 19μm, 18μm, 17.6μm, 17μm, 16.5μm, 16μm, 15.5μm, 15μm, 14.5μm, 14μm, 13.5μm, 13μm, 12μm, 11.5μm, 11.2μm, 11.0μm, 10.8μm, 10.3μm, 10μm, 9.8μm, 9.5μm, 9.2μm, 9. 0μm, 8.8μm, 8.5μm, 8.3μm, 8.0μm, 7.5μm, 7.0μm, 6.8μm, 6.5μm, 6.0μm, 5.8μm, 5.5μm.

[0143] For example, on the first surface M1 of the color filter pattern located in the peripheral area BB, the size of the protrusion along the direction perpendicular to the plane of the substrate 1 can be 0.006μm, 0.007μm, 0.008μm, 0.009μm, 0.01μm, 0.02μm, 0.03μm, 0.035μm, 0.038μm, 0.040μm, 0.043μm, 0.045μm, 0.048μm, 0.050μm, 0.052μm, 0.055μm, or 0.058μm.

[0144] It should be noted that the above-mentioned exemplary dimensions are average values. In practical applications, the actual dimensions of each protrusion may fluctuate around the average value.

[0145] In at least one embodiment of this application, the number of protrusions and pits on the first surface M1 is not limited;

[0146] The embodiments provided in this application are as follows: Figure 4 In the spacer shown in Figure (3), a protrusion is provided at the geometric center of the first surface M1, which is different from the spacer provided in related technologies. Figure 1 The structure of the spacer shown can provide a larger support contact area, thereby improving the support effect of the spacer and reducing the probability of the spacer being compressed and deformed beyond repair or being crushed, thus improving the quality of the display substrate.

[0147] In at least one embodiment of this application, the organic structure includes a first cross section, which is a cross section along a direction perpendicular to the plane of the substrate 1, and the intersection line of the first cross section and the first surface M1 is parallel to the side of the first surface M1.

[0148] The number of protrusions set at the intersection line of the first surface M1 and the first cross section is odd.

[0149] For example, an organic structure is used as a spacer material for illustration, such as... Figure 4 Chinese (1) diagram and Figure 5 As shown in Figure (1), the intersection line of the first cross section (marked at A1A2 and A3A4, where the first cross section and the first surface M1 intersect) and the first surface M1 is parallel to the side of the first surface M1; as shown in Figure (1), the intersection line of the first cross section (marked at A1A2 and A3A4, where the first cross section and the first surface M1 intersect) and the first surface M1 is parallel to the side of the first surface M1; Figure 4 Chinese (1) diagram and Figure 5 The structures shown in Figure (1) are all the first surface M1 of the spacer. Among them, such as Figure 5 The middle (2) diagram is as follows Figure 5 Figure (1) shows a cross-sectional view along the A3A4 direction.

[0150] For example, such as Figure 4As shown in Figure (3), the first cross section is a cross section along the direction perpendicular to the plane where the substrate 1 is located. The intersection line of the first cross section and the first surface M1 is parallel to the side of the first surface M1. The number of protrusions set at the intersection line of the first surface M1 and the first cross section is 5.

[0151] For example, such as Figure 5 As shown in Figure (3), the first cross section is a cross section along the direction perpendicular to the plane where the substrate 1 is located. The intersection line of the first cross section and the first surface M1 is parallel to the side of the first surface M1. The number of protrusions set at the intersection line of the first surface M1 and the first cross section is 7.

[0152] For the color film pattern located in the peripheral area BB, the intersection line of its first cross section and the first surface M1 is parallel to the side of the first surface M1, and the number of protrusions set at the intersection line of the first surface M1 and the first cross section is odd.

[0153] For example, the number of protrusions provided at the intersection line of the first surface M1 and the first cross section of the color film pattern located in the peripheral area BB can be 3, 5, 7 or 9.

[0154] In at least one embodiment of this application, the organic structure includes a first cross section, which is a cross section along a direction perpendicular to the plane of the substrate 1, and the intersection line of the first cross section and the first surface M1 passes through the geometric center of the first surface M1; the number of protrusions provided at the intersection line of the first surface M1 and the first cross section is odd.

[0155] For example, when the intersection line of the first cross section and the first surface M1 passes through the geometric center of the first surface M1, the number of protrusions provided at the intersection line position of the first surface M1 and the first cross section is odd. For example, whether it is a spacer or a color film pattern, the number of protrusions provided at the intersection line position of the first surface M1 and the first cross section can be 3, 5, 7 or 9.

[0156] For example, whether it is a spacer or a colored film pattern, the multiple protrusions provided at the intersection line of the first surface M1 and the first cross section are distributed in a mirror-symmetrical manner.

[0157] In at least one embodiment of this application, the orthographic projection of the first surface M1 onto the substrate 1 is a quadrilateral; the intersection line of the first surface M1 and the first cross section is parallel to the diagonal of the quadrilateral.

[0158] Alternatively, the line of intersection of the first surface M1 and the first cross section is parallel to the side of the quadrilateral.

[0159] It should be noted that the quadrilaterals mentioned above are not necessarily standard quadrilaterals. They can be slight variations of standard quadrilaterals, including but not limited to standard quadrilaterals and rounded quadrilaterals.

[0160] When the organic structure includes a septum or a color filter structure, the first cross-section passing through the geometric center of the first surface M1 can include two cases:

[0161] In the first case, when the orthographic projection of the first surface M1 onto the substrate 1 is a quadrilateral, the first cross-section is parallel to the side of the quadrilateral, and the intersection line of the first surface M1 and the first cross-section is parallel to the same side of the quadrilateral; in this case, the number of protrusions set at the intersection line of the first surface M1 and the first cross-section is odd.

[0162] The second type is when the orthographic projection of the first surface M1 onto the substrate 1 is a quadrilateral, the first cross section is parallel to the diagonal of the quadrilateral, and the intersection line of the first surface M1 and the first cross section is parallel to the same diagonal of the quadrilateral; in this case, the number of protrusions set at the intersection line of the first surface M1 and the first cross section is odd.

[0163] In at least one embodiment of this application, for both the spacer and the color film pattern, the first surface M1 includes a central region and an edge region surrounding the central region, and the geometric center of the first surface M1 is located in the central region.

[0164] In embodiments of this application, the intermediate region includes at least a protrusion located at the geometric center of the first surface M1, and the edge region includes at least a plurality of protrusions located near the outer contour of the first surface M1.

[0165] Among them, the maximum distance between the portion of the protrusion located in the middle region and the substrate 1 is greater than or equal to the maximum distance between the portion of the protrusion located in the edge region and the substrate 1.

[0166] For example, the average distance between the middle region of the first surface M1 of the spacer and the substrate 1 along the plane perpendicular to the substrate 1 is larger, and the average distance between the edge region of the first surface M1 of the spacer and the substrate 1 along the plane perpendicular to the substrate 1 is smaller; the height (PSH) of the portion of the spacer located in the middle region is larger, and the height (PSH) of the portion of the spacer located in the edge region is smaller.

[0167] For example, the average distance between the middle region of the first surface M1 of the color filter pattern and the substrate 1 along the direction perpendicular to the plane of the substrate 1 is larger, and the average distance between the edge region of the first surface M1 of the color filter pattern and the substrate 1 along the direction perpendicular to the plane of the substrate 1 is smaller; the thickness of the portion of the color filter pattern in the middle region is larger, and the thickness of the portion of the color filter pattern in the edge region is smaller; it should be noted that the first surface M1 of the color filter pattern refers to the surface on the side away from the substrate 1 in the region that does not overlap with the adjacent color filter pattern.

[0168] In at least one embodiment of this application, for the spacer, a plurality of protrusions are provided at the outer contour position of the first surface M1, and the maximum distance between the portion of the protrusion at the outer contour position of the first surface M1 and the substrate 1 is less than or equal to the maximum distance between the other protrusions and the substrate 1.

[0169] For example, such as Figure 6 As shown, for the spacer, multiple protrusions are provided at the outer contour position of its first surface M1. The maximum distance h2 between the portion of the protrusion at the outer contour position of the first surface M1 and the substrate 1 is equal to the maximum distance h1 between the other protrusions and the substrate 1.

[0170] For example, such as Figure 7 As shown, for the spacer, multiple protrusions are provided at the outer contour position of its first surface M1. The maximum distance h2 between the portion of the protrusion at the outer contour position of the first surface M1 and the substrate 1 is smaller than the maximum distance h1 between the other protrusions and the substrate 1.

[0171] The maximum distance h2 between the portion of the protrusion located at the outer contour position of the first surface M1 and the substrate 1, as well as the maximum distance h1 between each of the other protrusions and the substrate 1, are both average values.

[0172] It should be noted that, due to the flatness of the structure of the spacer layer in the display substrate and the testing error of the testing equipment, the actual measured maximum distance between the portion of the protrusion located at the outer contour position of the first surface M1 and the substrate 1, and the maximum distance h1 between each of the other protrusions and the substrate 1 may fluctuate. Fluctuations within 1.5% of the average value are all within the scope of protection of this application.

[0173] In at least one embodiment of this application, for a spacer, a first surface M1 includes a central region and an edge region surrounding the central region, the geometric center of the first surface M1 being located in the central region;

[0174] The radius of curvature of the portion of the protrusion located in the middle region is less than or equal to the radius of curvature of the portion of the protrusion located in the edge region.

[0175] It should be noted that the radius of curvature of the portion of the protrusion located in the middle region refers to the average radius of curvature of the protrusions in that region, while the radius of curvature of the portion of the protrusion located in the edge region refers to the average radius of curvature of the protrusions in that region.

[0176] In at least one embodiment of this application, such as Figure 4 (2) Figure and Figure 5 As shown in Figure (2), when the organic structure includes a spacer, the spacer includes a side surface, which is an arc surface, and the intersection line between the side surface and the first cross section is an arc line D.

[0177] Taking the first surface M1 of the spacer as a quadrilateral as an example, the intersection line of the first surface M1 and the first cross section is parallel to the diagonal of the quadrilateral; or, the intersection line of the first surface M1 and the first cross section is parallel to the side of the quadrilateral.

[0178] In an exemplary embodiment, since the size of the first surface M1 of the spacer is less than or equal to the size of the second surface, wherein the second surface is a surface disposed opposite to the first surface M1 and closer to the substrate 1, and the side surface of the spacer is an annular arc surface;

[0179] In at least one embodiment of this application, the radius of curvature of the arc gradually decreases along the direction away from the substrate 1.

[0180] In related technologies, such as Figure 1 At the location marked C, the intersection line between the side surface and the first cross-section is a straight line. Figure 1 The first cross section is a cross section passing through the geometric center A of the first surface M1 and perpendicular to the plane where the substrate 1 is located;

[0181] In this application, as Figure 4 (2) Figure and Figure 5 In Figure (2), at position D, the intersection line between the side of the spacer and the first cross-section is an arc. During the fabrication of the display substrate to form the display panel, when the display panel is compressed by external force, compared to... Figure 1 The side of the septum in the related technologies has a gradually changing slope because the intersection line between the side of the septum in this application and the first cross section is an arc. Furthermore, the slope angle of the side of the septum provided in the embodiments of this application is smaller than that of the septum in the related technologies. Therefore, the septum in this application can withstand greater pressure and has a better elastic recovery rate.

[0182] Taking the aforementioned septum as an example of a sub-septum (Sub PS), the test results are illustrated as follows: when the Sub PS has a height PSH of 2.35 μm and a Top CD of 21 μm (the side length of the first surface M1, assuming the first surface M1 is square), under a load of 100 mN, the elastic recovery rate of the sub-septum in the related art is 80%, while the elastic recovery rate of the sub-septum provided in the embodiments of this application can be as high as 89.9%. The performance of the sub-septum provided in the embodiments of this application is significantly improved.

[0183] In at least one embodiment of this application, when the organic structure includes a spacer, the distance between the vertices of two adjacent protrusions in a direction parallel to the plane of the substrate 1 is equal to 1 / 2 to 1 / 6 of the size of the planar pattern of the spacer in a predetermined direction, wherein the predetermined direction is the direction in which one of the two adjacent protrusions points to the other protrusion.

[0184] The vertex of the protrusion refers to the point on the protrusion that is the furthest from the substrate 1 along the direction perpendicular to the plane of the substrate 1.

[0185] For example, such as Figure 6 As shown, the distance between the vertex of the left-hand protrusion and the vertex of the middle protrusion is equal to half the dimension of the first surface M1 along a preset direction, where the preset direction is... Figure 6 The protrusion on the left side points in the direction of the protrusion in the middle position;

[0186] For example, such as Figure 4 As shown in Figure (3), the distance between the vertex of the protrusion in the middle position and the vertex of the protrusion to its right is equal to 1 / 4 of the dimension of the first surface M1 along a preset direction; the preset direction is... Figure 4 The protrusion in the middle of the middle of the figure (3) points in the direction of the protrusion to its right;

[0187] For example, when the aforementioned preset direction is parallel to the intersection line of the first surface M1 and the first cross section, if the number of protrusions on the intersection line is 2N+1, then the average distance between the vertices of two adjacent protrusions is equal to 1 / 2N, where N is a positive integer.

[0188] For example, when the planar shape of the spacer is a quadrilateral, the dimensions of the first direction and the second direction of the quadrilateral are both in the range of 10μm to 60μm, and the first and second directions are perpendicular; for example, the distance between the vertices of two adjacent protrusions can be 15μm, 12μm, 11μm, 10μm, 8μm, 6μm, 5μm, or 3μm.

[0189] In at least one embodiment of this application, the number of pits provided at the intersection line of the first surface M1 and the first cross section is even, and the number of protrusions is greater than the number of pits.

[0190] In at least one embodiment of this application, the number of protrusions provided at the intersection line of the first surface M1 and the first cross-section is three (e.g., Figure 6 and Figure 7 (as shown), 5 (for example) Figure 8 and Figure 9 (as shown) and any one of the 7 (e.g.) Figure 10 and Figure 11 (As shown).

[0191] In an exemplary embodiment, the orthographic projection of the first surface onto the substrate is a quadrilateral. When the intersection line of the first surface M1 and the first cross section is parallel to the diagonal of the quadrilateral, the number of protrusions provided at the intersection line of the first surface M1 and the first cross section is any one of 3, 5, and 7.

[0192] In an exemplary embodiment, the orthographic projection of the first surface onto the substrate is a quadrilateral. When the intersection line of the first surface M1 and the first cross section is parallel to the side length of the quadrilateral, the number of protrusions provided at the intersection line of the first surface M1 and the first cross section is any one of 3, 5, and 7.

[0193] It should be noted that the aforementioned quadrilaterals include, but are not limited to, standard quadrilaterals and rounded quadrilaterals.

[0194] In at least one embodiment of this application, the standard deviation of the size of the organic structure along the direction perpendicular to the plane of the substrate 1 is less than or equal to 0.2 μm.

[0195] For example, taking the height of the organic structure (the height of the spacer PSH or the thickness of the color filter pattern THK) as 3μm to 2μm, the standard deviation of three times the size of the organic structure along the plane perpendicular to the substrate 1 is less than or equal to 0.2μm. In this case, the height of the organic structure at different positions in the display substrate has good uniformity, which improves the quality of the display substrate.

[0196] Embodiments of this application provide a display panel, including a display substrate as described above.

[0197] The specific structure of the display substrate included in the display panel will not be described in detail here; please refer to the embodiments mentioned above.

[0198] The display panel provided in the embodiments of this application includes a display substrate. Due to differences in the design and fabrication process of the organic structure in the display substrate, the first surface M1 of the organic structure is not an ideal plane. The distances between various positions on the first surface M1 and the substrate 1 are not completely equal. In the embodiments of this application, the difference between the maximum distance between the first surface M1 and the substrate 1 and the minimum distance between the first surface M1 and the substrate 1 is less than or equal to 0.06 μm. That is, the first surface M1 of the organic structure has high flatness. When the display panel prepared by the display substrate is pressed, the organic structure can play a better supporting role, thereby improving the quality of the display panel.

[0199] The embodiments of this application provide a display device, including a display panel as described above. The display device may be a display device such as an LCD display, or any product or component with display function such as a television, digital camera, mobile phone, or tablet computer that includes such display devices.

[0200] A photomask is a patterned master used in photolithography to transfer a pattern onto a substrate during the exposure process. In thin-film transistor liquid crystal displays (TFT-LCDs), the columnar spacers, crucial for cell thickness support, are often fabricated using half-tone masks (HTMs) to reduce processing steps. The main spacer (Main PS) is created using a full-tone pattern within the HTM, while the sub-spacer (Sub PS) is created using a half-tone pattern, forming a step between the two spacers. However, the fabrication of HTMs is technically challenging and time-consuming, particularly the process of forming a chromium film within a predetermined area to achieve the semi-transparent effect, which is extremely difficult and costly.

[0201] Based on this, embodiments of this application provide a gray-tone mask (GTM). This gray-tone mask designs micro-patterns within the gaps, reducing the intensity of light received by the lithography machine after the light source passes through these micro-patterns, achieving an effect similar to the semi-transparent pattern in a semi-transparent mask. This gray-tone mask has lower fabrication costs, a shorter fabrication cycle, and produces high-quality spacers.

[0202] The mask provided in the embodiments of this application will be described and explained in detail below with reference to the accompanying drawings.

[0203] Embodiments of this application provide a photomask used to fabricate a display substrate as described above. The photomask includes a plurality of first slits (not shown), such as... Figures 12-15 As shown, the first gap is provided with a plurality of first light-blocking strips 2 and a plurality of second light-blocking strips 3 arranged in the same direction. The first light-blocking strips 2 and at least one second light-blocking strip 3 intersect each other. The planar pattern of the pattern in the first gap is a mirror-symmetric pattern.

[0204] It should be noted that, as Figures 12-15 The patterns shown are all miniature patterns set within the first gap.

[0205] In an exemplary embodiment, the mask is used to prepare an organic structure as described above, wherein the organic structure includes a septum and a color filter structure;

[0206] When the mask is used to form septa, the number of first slits in the mask is the same as the number of septa. For example, the number of first slits is the same as the number of auxiliary septa, and the arrangement pattern of the first slits is the same as the arrangement pattern of the auxiliary septa.

[0207] When the mask is used to form a color filter structure, for example, when it is used to form a color filter structure (e.g., CF-R) located in the peripheral area BB, the number of first slits in the mask is the same as that of the color filter structure (e.g., CF-R) located in the peripheral area BB, and the arrangement pattern of the first slits in the mask is the same as that of the color filter structure (e.g., CF-R) located in the peripheral area BB.

[0208] For example, the photomask may further include a plurality of second slits, wherein the second slits are fully transparent patterns; when the photomask is used to form a spacer, the second slits may be used to form a main spacer; when the photomask is used to form a color filter pattern, the second slits are used to form a color filter pattern located in the display area AA; wherein the height of the main spacer is greater than the height of the auxiliary spacer, and the thickness of the color filter pattern located in the display area AA is greater than the thickness of the color filter pattern located in the peripheral area.

[0209] In an exemplary embodiment, the planar shapes of the first light-blocking strip 2 and the second light-blocking strip 3 are both strip-shaped, for example, rectangular.

[0210] In an exemplary embodiment, such as Figures 12-15 As shown, the width 'a' of the first light-blocking strip 2 and the width 'f' of the second light-blocking strip 3 are equal;

[0211] In at least one embodiment of this application, the minimum distance b between two adjacent first light-blocking strips 2 is different from the minimum distance e between two adjacent second light-blocking strips 3;

[0212] In at least one embodiment of this application, the minimum distance b between two adjacent first light blocking strips 2 is equal to the minimum distance e between two adjacent second light blocking strips 3; this specification uses the example of the minimum distance b between two adjacent first light blocking strips 2 being equal to the minimum distance e between two adjacent second light blocking strips 3 for illustration.

[0213] The minimum distance between two adjacent first light-blocking strips 2 refers to the spacing between two adjacent first light-blocking strips 2 in a direction perpendicular to the first light-blocking strip 2. The meaning of the minimum distance between two adjacent second light-blocking strips 3 is similar to that mentioned above, and will not be repeated here.

[0214] The intersection of the first light strip 2 and at least one second light strip 3 includes, but is not limited to, the following situations:

[0215] The first type is where a first light bar 2 intersects with a second light bar 3, and the first light bar 2 does not intersect with any other second light bar 3;

[0216] The second type is where a first light bar 2 intersects with two second light bars 3 respectively, and the first light bar 2 does not intersect with any other second light bars 3;

[0217] The third type is where the first light-blocking strip 2 of the first part intersects with the second light-blocking strip 3 of the first part, and the second light-blocking strip 2 of the second part intersects with the second light-blocking strip 3 of the second part;

[0218] For example, such as Figure 15 As shown, a first light-blocking strip 2 (e.g.) Figure 15 The first light strip marked 2A intersects with three second light strips 3 (including two second light strips marked 3A and one second light strip marked 3C), and the first light strip 2 does not intersect with any other second light strips (such as the second light strip marked 3C).

[0219] The fourth type is where one of the first light bars 2 intersects with all the second light bars 3; and one of the second light bars 3 intersects with all the first light bars 2.

[0220] For example, such as Figure 12 , Figure 13 and Figure 14 As shown, for each first light bar 2, it intersects with all second light bars 3; for each second light bar 3, it intersects with all first light bars 2.

[0221] For example, such as Figure 15 As shown, one of the first light bars 2 (e.g., the first light bar marked 2C) intersects with all the second light bars 3; one of the second light bars 3 (e.g., the second light bar marked 3C) intersects with all the first light bars 2.

[0222] In an exemplary embodiment, the mask provided in this application is mainly used to prepare spacers and color filter patterns. In order to balance the simplicity of the planar pattern of the spacer and color filter structure and better support effect, the planar pattern of the pattern in the first slit of the mask is designed as a mirror-symmetric pattern to prepare a spacer and color filter structure with mirror-symmetric features in the planar pattern. It should be noted that in this specification, the planar pattern of a certain structure refers to the orthographic projection pattern of the structure on the substrate 1 or the reference surface. The meaning of the relevant descriptions in other positions is the same as that here, and will not be repeated.

[0223] The mask provided in the embodiments of this application is a gray-toned mask. This gray-toned mask designs micro-patterns within a first slit. After the light source of the lithography machine passes through these micro-patterns, the actual light intensity received by the lithography machine is reduced, achieving an effect similar to the semi-transparent pattern in a semi-transparent mask. This gray-toned mask has low manufacturing costs, a short manufacturing cycle, and produces high-quality spacers.

[0224] In at least one embodiment of this application, such as Figures 12-15 As shown, the number of the first and second light bars is the same.

[0225] For example, such as Figure 12 As shown, there are two first light-blocking bars 2 and two second light-blocking bars 3.

[0226] For example, such as Figure 13 As shown, there are three first light-blocking bars 2 and three second light-blocking bars 3;

[0227] For example, such as Figure 14 As shown, there are four light-blocking bars 2 and four light-blocking bars 3.

[0228] For example, such as Figure 15 As shown, there are 5 light-blocking bars 2 and 5 light-blocking bars 3.

[0229] In at least one embodiment of this application, such as Figures 12-15 As shown, the first light-blocking strip 2 and the second light-blocking strip 3 are set vertically.

[0230] In at least one embodiment of this application, such as Figures 12-15 As shown, the minimum distance b between two adjacent first light blocking strips 2 is equal to the minimum distance e between two adjacent second light blocking strips 3, and the minimum distance b between two adjacent first light blocking strips 2 is greater than the width a of the first light blocking strip.

[0231] For example, the width a of the first light-blocking strip 2 is greater than or equal to 1.0 μm; its preferred width range is 1 μm to 4 μm; for example, the width a of the first light-blocking strip can be 1.2 μm, 1.5 μm, 1.8 μm, 1.9 μm, 2.0 μm, 2.2 μm, 2.4 μm, 2.5 μm, 2.8 μm, 3.0 μm, 3.2 μm, 3.5 μm, 3.8 μm, or 4.0 μm.

[0232] For example, the width f of the second light-blocking strip 3 is greater than or equal to 1.0 μm; its preferred width range is 1 μm to 4 μm; for example, the width a of the first light-blocking strip can be 1.5 μm, 1.8 μm, 1.9 μm, 2.0 μm, 2.2 μm, 2.4 μm, 2.5 μm, 2.8 μm, 3.0 μm, 3.2 μm, 3.5 μm, 3.8 μm, or 4.0 μm.

[0233] In at least one embodiment of this application, the width 'a' of the first light-blocking strip and the width 'f' of the second light-blocking strip are equal.

[0234] For example, the minimum spacing b between two adjacent first light-blocking strips 2 ranges from 2.5 μm to 14 μm, with a preferred range of 4 μm to 12 μm; for instance, the minimum spacing b between two adjacent first light-blocking strips 2 is 4.2 μm, 4.5 μm, 4.8 μm, 5.0 μm, 5.2 μm, 5.5 μm, 5.8 μm, 6.0 μm, 6.3 μm, 6.5 μm, 6.8μm, 7.0μm, 7.3μm, 7.5μm, 7.8μm, 8.0μm, 8.3μm, 8.5μm, 8.8μm, 9.0μm, 9.5μm, 9 .8μm, 10.0μm, 10.3μm, 10.5μm, 10.8μm, 11.0μm, 11.3μm, 11.5μm, 11.8μm, 12.0μm.

[0235] For example, the minimum spacing e between two adjacent second light-blocking strips 3 ranges from 2.5 μm to 14 μm, with a preferred range of 4 μm to 12 μm; for instance, the minimum spacing e between two adjacent second light-blocking strips 3 is 4.2 μm, 4.5 μm, 4.8 μm, 5.0 μm, 5.2 μm, 5.5 μm, 5.8 μm, 6.0 μm, 6.3 μm, 6.5 μm, 6.8μm, 7.0μm, 7.3μm, 7.5μm, 7.8μm, 8.0μm, 8.3μm, 8.5μm, 8.8μm, 9.0μm, 9.5μm, 9 .8μm, 10.0μm, 10.3μm, 10.5μm, 10.8μm, 11.0μm, 11.3μm, 11.5μm, 11.8μm, 12.0μm.

[0236] For example, the minimum spacing e between two adjacent second light strips 3 is greater than the width f of the second light strip 3;

[0237] For example, the minimum spacing e between two adjacent second light strips 3 is equal to the width f of the second light strip 3.

[0238] For example, such as Figure 12 As shown, the dimension d of the first extension of the first light-blocking strip 2 is equal to the dimension g of its second extension, and the dimension c of the first extension of the second light-blocking strip 3 is equal to the dimension h of its second extension; it should be noted that, as Figure 12 The dimensions of the markers d, g, c, and h are related to the size of the planar pattern of the organic structure (e.g., septum or color film pattern) prepared using this mask. The larger the above four dimensions are, the larger the size of the planar pattern of the corresponding organic structure.

[0239] In this specification, the example is given where all four parameters are equal: the dimension d of the first extension of the first light-blocking strip 2 and the dimension g of its second extension, and the dimension c of the first extension of the second light-blocking strip 3 and the dimension h of its second extension.

[0240] In at least one embodiment of this application, such as Figures 12-14 As shown, the first light-blocking strip 2 and the second light-blocking strip 3 have the same structure and size. Any first light-blocking strip 2 intersects with each second light-blocking strip 3, and any second light-blocking strip 3 intersects with each first light-blocking strip 2.

[0241] For example, the patterns in the first slit of the photomask are all as follows Figure 12 As shown, the first light-blocking strip 2 and the second light-blocking strip 3 are both rectangular in planar shape, and their areas are the same; there are two of each type of light-blocking strip 2 and light-blocking strip 3; among them, as... Figure 12 The geometric center of the pattern shown is located in the hollow area enclosed by two first light-blocking strips 2 and two second light-blocking strips 3, and the hollow area is translucent;

[0242] For example, the patterns in the first slit of the photomask are all as follows Figure 13 As shown, the first light-blocking strip 2 and the second light-blocking strip 3 are both rectangular in planar shape, and their areas are the same; there are three of each type of light-blocking strip 2 and light-blocking strip 3; among them, as... Figure 13 The geometric center of the pattern shown is located at the intersection of the first light-blocking strip 2 and the second light-blocking strip 3, that is, its geometric center is located in the non-hollowed-out area;

[0243] For example, the patterns in the first slit of the photomask are all as follows Figure 14As shown, the first light-blocking strip 2 and the second light-blocking strip 3 are both rectangular in planar shape, and their areas are the same; the number of first light-blocking strips 2 and the number of second light-blocking strips 3 are both four; among them, as... Figure 14 The geometric center of the pattern shown is located at the intersection of the first light-blocking strip 2 and the second light-blocking strip 3, that is, its geometric center is located in the non-hollowed-out area;

[0244] Among them, for such Figure 13 and Figure 14 As the number of light-blocking strips in the first gap of the same size increases, the diffraction of light is enhanced when the organic structure is prepared using this mask. The organic structure area corresponding to the non-cutout area of ​​the mask can also receive light, and the stronger the extension effect, the stronger the light received by the organic structure area corresponding to the non-cutout area.

[0245] The embodiments provided in this application are as follows: Figures 12-14 The organic structures (such as spacers and color film patterns) prepared by the mask shown can greatly improve the problem of a single large pit (also known as a crater) appearing at the geometric center of the first surface M1 of the organic structure in related technologies. It can greatly improve the surface flatness and thickness uniformity of the organic structure, thereby improving the support effect of the organic structure and improving the quality of the organic structure.

[0246] In at least one embodiment of this application, such as Figure 15 As shown, the first light blocking strip 2 includes a first group (marked 2A), a second group (marked 2B), and a third group (marked 2C), and the second light blocking strip 3 includes a first group (marked 3A), a second group (marked 3B), and a third group (marked 3C).

[0247] The first group of first light bars and the second group of first light bars each include two first light bars 2; the first group of second light bars and the second group of second light bars each include two second light bars; the third group of first light bars includes one first light bar; and the third group of second light bars includes one second light bar.

[0248] The first group of first light-blocking strips 2A and the first group of second light-blocking strips 3A intersect to form a first closed ring. The second group of first light-blocking strips 2B and the second group of second light-blocking strips 3B intersect to form a second closed ring. The second closed ring is located inside the first closed ring. The third group of first light-blocking strips 2C and the third group of second light-blocking strips 3C intersect, and both intersect with the first and second closed rings respectively. The geometric center of the photomask is located at the intersection of the third group of first light-blocking strips 2C and the third group of second light-blocking strips 3C.

[0249] In the embodiments of this application, by setting the edge of the pattern in the first slit of the mask to a closed shape (e.g., the aforementioned first and second closed rings), the exposure controllability of the edge region of the organic structure (e.g., spacers and color filter patterns) can be greatly improved, resulting in uniform exposure of the edge region of the organic structure and improved thickness uniformity of the edge region of the organic structure. Combined with the intersection of the third group of first light-blocking strips 2C and the third group of second light-blocking strips 3C, and their respective intersections with the first and second closed rings, the middle region of the organic structure exposed by the mask also has high thickness uniformity. The organic structure prepared by this mask has high process stability and controllability, good quality, low cost, and short preparation cycle. In comparison, the cost and preparation cycle of this mask are reduced by 50% or more compared with the halftone mask in related technologies.

[0250] Embodiments of this application provide a method for fabricating a display substrate, such as... Figure 16 As shown, the method includes:

[0251] S801, Provide substrate 1;

[0252] The material of the substrate 1 is not limited here. For example, the material of the substrate 1 can be a rigid material, such as glass; or the material of the substrate 1 can be a flexible material, such as polyimide.

[0253] S802, forming a diaphragm material film;

[0254] A coating process can be used to form a film of diaphragm material that covers the entire surface.

[0255] S803. A mask as described above is used to pattern the spacer material film to obtain a spacer; wherein the spacer includes a first surface M1, the first surface M1 is disposed away from the substrate 1, and the first surface M1 is provided with a plurality of protrusions and a plurality of pits, the pits being located between at least two protrusions; wherein a protrusion is provided at the geometric center of the first surface M1, and the difference between the maximum distance between the first surface M1 and the substrate 1 and the minimum distance between the first surface M1 and the substrate 1 in the direction perpendicular to the plane of the substrate 1 is less than or equal to 0.06 μm.

[0256] The aforementioned mask refers to the grayscale mask provided in the embodiments of this application. The specific structure of the grayscale mask can be referred to in the previous description, and will not be repeated here.

[0257] The type of septum material is not limited here. For example, the septum material can be a main septum material (Main PS); or, for example, a sub septum material (Sub PS). The embodiments of this application are described using the septum material prepared by the above-mentioned photomask as a sub septum material.

[0258] Due to differences in the design and fabrication process of the organic structure, the first surface M1 is not an ideal plane. The distances from various positions on the first surface M1 to the substrate 1 are not completely equal. In the embodiments of this application, the difference between the maximum distance between the first surface M1 and the substrate 1 of the organic structure prepared by the above-mentioned fabrication method is less than or equal to 0.06 μm. That is, the first surface M1 of the organic structure has high flatness. When the display panel prepared by the display substrate is pressed, the organic structure can play a better supporting role, thereby improving the quality of the display panel.

[0259] It should be noted that both the spacer and the colored film pattern located in the peripheral area of ​​the BB can provide support.

[0260] In at least one embodiment of this application, such as Figure 17 As shown, step S803, patterning the spacer material film using a photomask as described above to obtain the spacer material, includes:

[0261] S8031. Determine the preset height and preset planar dimensions of the spacer;

[0262] In practical applications, the required pre-set height and pre-set planar dimensions of the spacers are calculated based on the product type and design.

[0263] S8032. Determine two of the following three parameters in the photomask: the number of first light-blocking strips 2, the width a of the first light-blocking strips 2, and the minimum spacing between two adjacent first light-blocking strips 2; wherein, the number of first light-blocking strips 2 is the same as the number of second light-blocking strips 3, the width a of the first light-blocking strips 2 is the same as the width f of the second light-blocking strips 3, and the minimum spacing b between two adjacent first light-blocking strips 2 is the same as the minimum spacing e between two adjacent second light-blocking strips 3;

[0264] Based on the preset height and preset plane dimensions of the septum, determine the shape and size of the pattern in the first slit of the mask plate required to prepare the septum of this specification;

[0265] In the embodiments of this application, before determining two of the three parameters in the photomask—the number of first light-blocking strips 2, the width a of the first light-blocking strip 2, and the minimum spacing between two adjacent first light-blocking strips 2—other parameters besides the above three parameters need to be set. Then, the influence trend of the changes of the above three parameters on the preset height and preset planar dimensions of the spacer is studied. Considering the difficulty and cost of the photomask manufacturing process, two of the above three parameters are determined, and then the influence trend of the change of the remaining parameter (unknown parameter) on the dimensional parameters (height and planar dimensions) of the spacer is explored.

[0266] S8033, Obtain the preset relationship between the unknown parameter and the size parameter of the spacer among the three parameters: the number of first light-blocking strips 2, the width a of the first light-blocking strips 2, and the minimum distance b between two adjacent first light-blocking strips 2;

[0267] Through simulation calculations combined with experimental tests, the preset relationship between the unknown parameters of the three parameters—the number of first light-blocking strips 2, the width a of the first light-blocking strip 2, and the minimum distance b between two adjacent first light-blocking strips 2—and the size parameters of the spacer can be obtained. For example, a preset relationship curve can be obtained.

[0268] S8034. Determine the unknown parameters of the photomask based on the size parameters and preset relationships of the spacers;

[0269] The dimensional parameters of the spacer include height PSH, dimension TX in the first direction, and dimension TY in the second direction. The height PSH of the spacer decreases as the minimum distance b between two adjacent first light blocking strips 2 increases, and the planar dimension of the spacer increases as the minimum distance b between two adjacent first light blocking strips 2 increases. The minimum distance b between two adjacent first light blocking strips 2 is the same as the minimum distance e between two adjacent second light blocking strips 3.

[0270] S8035. Determine the specifications of the mask based on its three parameters, and then use the mask to pattern the spacer material film to obtain the spacer material.

[0271] In at least one embodiment of this application, step S8032, determining two of the following three parameters: the number of first light-blocking strips 2 in the photomask, the width a of the first light-blocking strips 2, and the minimum spacing b between two adjacent first light-blocking strips 2, includes:

[0272] Sub-step 1: Determine the number of first light-blocking strips 2 and the width a of the first light-blocking strips 2 in the photomask.

[0273] In at least one embodiment of this application, the step S8033, obtaining the preset relationship between the unknown parameter among the three parameters—the number of first light-blocking strips 2, the width a of the first light-blocking strips 2, and the minimum spacing b between two adjacent first light-blocking strips 2—and the size parameter of the spacer, includes:

[0274] Sub-step 1: Obtain the preset relationship between the minimum distance b between two adjacent first light-blocking strips 2 and the size parameters of the spacer; wherein, the size parameters include the height PSH and the planar dimensions.

[0275] In at least one embodiment of this application, the height PSH of the spacer decreases as the minimum distance b between two adjacent first light-blocking strips 2 increases, and the planar dimension of the spacer increases as the minimum distance b between two adjacent first light-blocking strips 2 increases; the minimum distance b between two adjacent first light-blocking strips 2 is the same as the minimum distance e between two adjacent second light-blocking strips 3.

[0276] In at least one embodiment of this application, the planar dimensions of the spacer include a dimension TX in a first direction and a dimension TY in a second direction, the first direction and the second direction being perpendicular; the dimension TX in the first direction increases as the minimum distance b between two adjacent first light-blocking strips 2 increases, and the dimension TY in the second direction increases as the minimum distance b between two adjacent first light-blocking strips 2 increases; the second direction is consistent with the extension direction of the first light-blocking strip 2, and the first direction is consistent with the extension direction of the second light-blocking strip 3.

[0277] The following section will detail the process of determining the specific specifications of the photomask and the relationship between the various specifications and parameters of the photomask and the dimensions of the spacers.

[0278] Before determining the usable pattern in the first slit of the mask, first provide, as follows: Figure 18 , Figure 19 and Figure 12 Three preliminary pattern designs are described below; the pattern in the first slit is used as an example to illustrate the preparation of the auxiliary septum.

[0279] The width of the light-blocking strip (also known as the grid) is a direct factor affecting the projection light flux, significantly influencing the height and size of the spacers formed after photocuring of organic materials. Since the width limit of the light-blocking strip depends on the resolution of the mask fabrication process, and when the width of the light-blocking strip in the mask approaches the 1µm resolution limit, the linewidth (width) of the spacers prepared by the mask will deteriorate, which is not conducive to improving the uniformity of large-size products. Therefore, in the early simulation calculations, the width of the light-blocking strip a ≥ 2.5µm was used for simulation calculations.

[0280] With other parameters fixed, the effect of varying light-blocking strip width on the height and dimensions of the spacer PS was studied, and the results are as follows: Figure 20A , Figure 20B and Figure 20C As shown; where, Figure 20A The curve shows the variation of the height PSH of the spacer PS with the width a (GridWidth) of the light-blocking strip. Figure 20B The curve showing the change in the dimension TX of the spacer PS in the first direction as a function of the width a of the light-blocking strip. Figure 20C The curve shows the change in the dimension TY of the spacer PS in the second direction as a function of the width a of the light-blocking strip; where the curve marked Case 1 is obtained by using... Figure 18The results of the mask pattern calculations shown are shown, with the curve marked Case 2 as obtained using the method described above. Figure 19 The results of the mask pattern calculations shown are as follows: The curve for Case 3 is obtained using the method described above. Figure 12 The result of the calculation for the mask pattern shown.

[0281] according to Figure 20A , Figure 20B and Figure 20C It can be seen that the height PSH of the spacer PS changes non-linearly with the shape of the light-blocking strip arrangement and the width a of the light-blocking strip; when the width a of the light-blocking strip is larger, the area occupied by the gray zone of the mask is smaller, and the height of the spacer PS prepared by masks with different shapes gradually becomes closer; it can be inferred that the width a of the light-blocking strip is a direct factor affecting the gray zone area and is related to the formation of the step difference of the spacer, where the step difference refers to the height difference between the main spacer and the auxiliary spacer.

[0282] The following simulation calculates the effect of the light-blocking strip width a of 3.5 μm on the height and dimensions of the spacer PS, using the example of a light-blocking strip width a of 3.5 μm. The simulation results are as follows: Figure 21A , Figure 21B and Figure 21C As shown; where, Figure 21A The curve showing the change in the height PSH of the spacer PS as a function of the light-blocking strip spacing b. Figure 21B The curve showing the change in the dimension TX of the spacer PS in the first direction as a function of the light-blocking strip spacing b. Figure 21C The curve shows the change in the dimension TY of the spacer PS in the second direction as a function of the light-blocking strip spacing b; where the curve marked Case 1 is the one using... Figure 18 The results of the mask pattern calculations shown are shown, with the curve marked Case 2 as obtained using the method described above. Figure 19 The results of the mask pattern calculations shown are as follows: The curve for Case 3 is obtained using the method described above. Figure 12 The result of the calculation for the mask pattern shown.

[0283] according to Figure 21A , Figure 21B and Figure 21C It can be seen that in the curve marked Case 3, as the spacing b of the light-blocking strips changes, the height PSH of the spacer PS, the dimension TX of the spacer PS in the first direction, and the dimension TY of the spacer PS in the second direction change the least and have the highest stability.

[0284] To further verify the accuracy of the above conclusions, the following methods were used: Figure 18 The mask pattern shown is as follows: Figure 19 The mask pattern shown and as Figure 12 The mask pattern shown was used to fabricate the septum, and the corresponding parameters were measured; Reference Figure 22 The diagram shows a top view and a 3D scan of the spacer fabricated using the three mask patterns described above; among them, the one using the above-described mask patterns is shown in the figure. Figure 12 The top view of the septum fabricated from the mask pattern shown has a shape that is close to rounded corners (or approximately circular), and... Figure 21B and Figure 21C The TX and TY dimensions obtained from the simulation calculations are nearly identical.

[0285] The measured results of how the height and dimensions of the spacer PS change with the width 'a' of the light-blocking strip are as follows: Figure 23A , Figure 23B and Figure 23C As shown, where, Figure 23A The curve shows the variation of the height PSH of the spacer PS with the width a (grid width) of the light-blocking strip. Figure 23B The curve showing the change in the dimension TX of the spacer PS in the first direction as a function of the width a of the light-blocking strip. Figure 23C The curve shows the change in the dimension TY of the spacer PS in the second direction as a function of the width a of the light-blocking strip; where the curve marked Case 1 is obtained by using... Figure 18 The measured results of the septum prepared using the mask pattern shown are given. The curve marked Case 2 is the one prepared using the mask pattern shown. Figure 19 The measured results of the septum prepared using the mask pattern shown are given. The curve for Case 3 is obtained using the method described above. Figure 12 The measured results of the spacers prepared using the mask pattern shown.

[0286] In the accompanying drawings of this specification, Grid Width represents the width 'a' of the light-blocking strip, and Grid Spacing represents the distance 'b' between two adjacent light-blocking strips, which is referred to simply as the light-blocking strip spacing 'b' and will not be elaborated further.

[0287] according to Figure 23A , Figure 23B and Figure 23C It can be seen that the measured results are close to the simulation calculation results. Taking into account the variation patterns of the height PSH of the spacer PS, the dimension TX of the spacer PS in the first direction, and the dimension TY of the spacer PS in the second direction, case 3 (e.g.) is adopted. Figure 12 The three parameters of the spacer prepared by the mask pattern shown have small variations with the width a of the light-blocking strip, and their stability is high.

[0288] The measured results of the height and dimensions of the spacer PS varying with the spacing b of the light-blocking strips are as follows: Figure 24A , Figure 24B and Figure 24C As shown, Figure 24A The curve shows the variation of the height PSH of the spacer PS with the width a (grid width) of the light-blocking strip. Figure 24BThe curve showing the change in the dimension TX of the spacer PS in the first direction as a function of the width a of the light-blocking strip. Figure 24C The curve shows the change in the dimension TY of the spacer PS in the second direction as a function of the width a of the light-blocking strip; where the curve marked Case 1 is obtained by using... Figure 18 The measured results of the septum prepared using the mask pattern shown are given. The curve marked Case 2 is the one prepared using the mask pattern shown. Figure 19 The measured results of the septum prepared using the mask pattern shown are given. The curve for Case 3 is obtained using the method described above. Figure 12 The measured results of the spacers prepared using the mask pattern shown;

[0289] according to Figure 24A , Figure 24B and Figure 24C It can be seen that the measured results are close to the simulation calculation results. Taking into account the variation patterns of the height PSH of the spacer PS, the dimension TX of the spacer PS in the first direction, and the dimension TY of the spacer PS in the second direction, case 1 (e.g.) is adopted. Figure 18 The mask pattern shown) and case 3 (as shown) Figure 12 The three parameters of the spacer prepared by the mask pattern shown have small variations with the width a of the light-blocking strip, and their stability is high.

[0290] Based on the simulation calculations and actual measurement results of the light-blocking strip width 'a' and the light-blocking strip spacing 'b', case 3 (as shown in the figure) is selected. Figure 12 The septum prepared using the mask pattern shown has the highest stability in three parameters.

[0291] Below, based on such Figure 12 The mask pattern shown is used to study the effects of the number of light-blocking strips n, the width of the light-blocking strips a, and the spacing b of the light-blocking strips on the height PSH of the spacer PS, the dimension TX of the spacer PS in the first direction, and the dimension TY of the spacer PS in the second direction. Among these, as... Figure 12 In the mask pattern shown, n is 2 (2 first light-blocking strips 2 and 2 second light-blocking strips 3), as... Figure 13 In the mask pattern shown, n is 3 (3 first light-blocking strips 2 and 3 second light-blocking strips 3), as... Figure 14 In the mask pattern shown, n is 4 (4 first light-blocking strips 2 and 4 second light-blocking strips 3);

[0292] Figure 25A The curve showing the effect of the width a of the light-blocking strips on the height PSH of the spacer is illustrated, given a fixed number of light-blocking strips n and a fixed spacing b between them. Figure 25B The curve showing the effect of the width of the light-blocking strips on the first direction dimension TX of the spacer is illustrated, given a fixed number of light-blocking strips n and a fixed spacing b. Figure 25CThe curve showing the effect of the width of the light-blocking strips on the second-direction dimension TY of the spacer is illustrated, given a fixed number of light-blocking strips n and a fixed spacing b. Figure 25A , Figure 25B and Figure 25C The five curves on the left side of the middle section all use the following... Figure 13 The test results of the septa prepared using the mask (n=3) shown are as follows. Figure 25A , Figure 25B and Figure 25C The five curves on the right side are adopted as follows Figure 14 Test results of the septa prepared using the mask shown (n=4);

[0293] according to Figure 25A , Figure 25B and Figure 25C The results show that as the width 'a' of the light-blocking strip increases, the height 'PSH', the first dimension 'TX', and the second dimension 'TY' of the spacer all increase. Furthermore, as the spacing 'b' of the light-blocking strips increases, the height 'PSH' of the spacer decreases, while the first dimension 'TX' and the second dimension 'TY' of the spacer both increase. When the number of light-blocking strips 'n' increases (e.g., from n=2 to n=3 and n=4), the ability of the photomask pattern to adjust the light flux becomes stronger, and the adjustment range of the height 'PSH' can be increased from 0.3 μm (e.g., ...). Figure 12 The mask size was increased to 0.8 μm (e.g., the mask). Figure 13 and Figure 14 (mask);

[0294] For example, when the width a of the light-blocking strip is 1.5um, the light flux can be effectively reduced by increasing the spacing b of the light-blocking strip. Compared with the characteristic values ​​of the spacer made by the semi-transparent mask process in related technologies, it is equivalent to achieving a semi-transparent effect of 12%.

[0295] For example, from Figure 25B and Figure 25C The results show that the dimensions of the spacer in the first direction (TX) and the spacer in the second direction (TY) range from 10μm to 60μm, which meets the size requirements of spacers in current display products.

[0296] Figure 26A It shows that for Figure 15 The mask pattern shown is a curve of the height PSH of the spacer as a function of the spacing b between the light-blocking strips, given a fixed width a of the light-blocking strips. Figure 26B It shows that for Figure 15 The mask pattern shown is a curve showing how the dimension TX of the spacer in the first direction changes with the spacing b of the light-blocking strips, given a fixed width a of the light-blocking strips. Figure 26C It shows that for Figure 15The mask pattern shown is a curve showing how the dimension TY of the spacer in the first direction changes with the spacing b of the light-blocking strips, given a fixed width a of the light-blocking strips.

[0297] according to Figure 26A , Figure 26B and Figure 26C The results show that, for Figure 15 The spacer fabricated using the mask pattern shown has the following characteristics: the height PSH of the spacer decreases as the spacing b of the light-blocking strips increases, and the height PSH of the spacer decreases as the width a of the light-blocking strips decreases; the dimension TX of the spacer in the first direction increases as the spacing b of the light-blocking strips increases, and the dimension TX of the spacer in the first direction decreases as the width a of the light-blocking strips decreases; the dimension TY of the spacer in the second direction increases as the spacing b of the light-blocking strips increases, and the dimension TY of the spacer in the second direction decreases as the width a of the light-blocking strips decreases.

[0298] It should be noted that in current display products, there needs to be a step difference between the main spacer and the auxiliary spacer, and the step difference is set to be 0.5μm to 0.7μm.

[0299] In addition, this manual only lists the data for the number of light-blocking strips n, the width of the light-blocking strip a, and the spacing between the light-blocking strips b / e, based on the optimization of the mask pattern. When the length of the light-blocking strip L and c / d change, TX / TY will also increase significantly to form a larger support area, which will not be listed here.

[0300] It should be noted that this application uses the example of light-blocking strip spacing b=e for illustration.

[0301] To facilitate practical operation, the formulas derived from the patterns mentioned above are simulated and calculated to make it easier to determine the relationship between the parameters of the mask and the size parameters of the spacer under different conditions.

[0302] When the number of light-blocking strips n is a fixed value, the PS characteristic value shows a certain linear trend as the width a and the spacing b(e) of the light-blocking strips change, specifically as follows:

[0303] (1)n=3, a=3.5, PSH=-0.0269*b+3.4030, TX=2.3650*b+16.6940, TY=2.3096*b+16.3310;

[0304] (2)n=3, a=3.0, PSH=-0.0288*b+3.3810, TX=2.2604*b+13.6510, TY=2.2098*b+13.8320;

[0305] (3)n=3, a=2.5, PSH=-0.0309*b+3.3315, TX=2.0353*b+12.2460, TY=1.9893*b+12.0680;

[0306] (4)n=3, a=2.0, PSH=-0.0216*b+3.1873, TX=2.0805*b+7.7562, TY=1.9865*b+8.3300;

[0307] (5)n=3, a=1.5, PSH=-0.0629*b+3.1782, TX=1.8273*b+4.4500, TY=1.9081*b+2.4918;

[0308] (6)n=4, a=3.5, PSH=-0.0246*b+3.3718, TX=3.6348*b+21.5530, TY=3.2129*b+23.4510;

[0309] (7)n=4, a=3.0, PSH=-0.0276*b+3.3603, TX=3.3148*b+19.3440, TY=3.1471*b+20.1050;

[0310] (8)n=4, a=2.5, PSH=-0.0301*b+3.3305, TX=3.0049*b+17.4940, TY=2.9698*b+17.0710;

[0311] (9)n=4, a=2.0, PSH=-0.0364*b+3.2797, TX=2.9894*b+12.7240, TY=2.8358*b+13.2430;

[0312] (10)n=4, a=1.5, PSH=-0.0529*b+3.1888, TX=2.9267*b+7.5587, TY=2.8798*b+7.0863;

[0313] When the number of light-blocking strips n / width a is determined, PSH, TX, TY and the spacing b of the light-blocking strips show a certain linear relationship. According to the above formula, when the specifications of the spacer PS (including height and planar dimensions) are determined, the number and detailed dimensions of the light-blocking strips in the required mask can be calculated accurately and quickly, which is convenient for designing and manufacturing the mask.

[0314] To further investigate the combined effects of the light-blocking strip width *a* and the light-blocking strip spacing *b* on optical density (the amount of light actually incident on the diaphragm material film through the mask), based on the above calculations and analysis, the light-blocking strip width *a* and the light-blocking strip spacing *b* are further fitted. According to the actual exposure parameters, the slope and intercept of the linear relationship between the diaphragm material's characteristic values ​​(PSH, TX, TY) and the light-blocking strip spacing *b* can be expressed using a fourth-order equation for the light-blocking strip width *a*, specifically as follows:

[0315] When n = 3, it corresponds to... Figure 13 The mask pattern shown;

[0316] (1) PSH=(-0.0491×a) 4 +0.5243×a 3 -2.0569×a 2 +3.5057×a-2.2144)×b+(0.198×a 4 -2.0884×a 3 +7.9991×a 2 -12.992×a+10.714)

[0317] (2) TX=(-0.6397×a 4 +6.5153×a 3 -24.176×a 2 +38.851×a-20.802)×b+(5.9941×a 4 -59.638×a 3 +214.84×a 2 -324.79×a+179.18)

[0318] (3)TY=(-0.4211×a 4 +4.1813×a 3 -15.026×a 2 +23.284×a-11.189)×b+(1.7219×a 4 -15.329×a 3 +46.016×a 2 -45.255×a+9.856)

[0319] When n = 4, it corresponds to... Figure 14 The mask pattern shown;

[0320] (1) PSH=(-0.0014×a) 4 +0.0211×a 3 -0.1132×a 2+0.2645×a-0.2591)×b+(-0.0109×a 4 +0.1239×a 3 -0.5583×a 2 +1.2291×a+2.2385)

[0321] (2)TX=(-0.4162×a 4 +4.1997×a 3 -15.198×a 2 +23.575×a-10.307)×b+(3.8691×a 4 -38.188×a 3 +134.51×a 2 -191.86×a+101.99)

[0322] (3)TY=(-0.0134×a 4 -0.059×a 3 +1.035×a 2 -2.8714×a+5.1253)×b+(-0.2858×a 4 +4.6185×a 3 -25.438×a 2 +64.876×a-47.134);

[0323] It should be noted that, for the mask pattern provided in the embodiments of this application, when n=3 or n=4, the characteristics of the first surface of the prepared septum are significantly different from the characteristics of the first surface of the septum prepared using a semi-permeable mask (HTM) in related technologies. The contour morphology of the septum prepared in related technologies is as follows: Figure 1 As shown, the first surface has a single pit (also known as a crater) in the middle. However, the first surface of the septum prepared by the mask provided in the embodiments of this application has multiple protrusions, and the center of the first surface is a protrusion. The specific structure of the septum provided in the embodiments of this application can be referred to the specific description of the septum above, and will not be repeated here.

[0324] It should also be noted here that when n=3, it corresponds to... Figure 13 The mask pattern shown has a light-transmitting area to light-blocking area ratio of 0.2. The number of protrusions on the intersection line of the first surface and the first cross section of the spacer prepared by the mask pattern is 5, the number of protrusions is 4, the average pit depth is 0.03 μm, and the uniformity (3δ) of the spacer height PSH is 0.13 μm.

[0325] When n=3, the number of protrusions and the average depth of pits on the surface change when the width a and the spacing b of the light-blocking strips are adjusted.

[0326] For example, when the width a of the entire light strip decreases, the number of protrusions on the intersection line of the first surface and the first cross section of the spacer increases, for example, the number of protrusions on the intersection line of the first surface and the first cross section of the spacer increases from 3 to 5.

[0327] For example, when the spacing b of the light-blocking strips increases, the average value of the pit depth decreases; for instance, when the spacing b of the light-blocking strips increases from 4.0 μm to 12 μm, the average value of the pit depth (the step difference between the lowest point of the pit and the highest point of the ridge) decreases from 0.08 μm to 0.02 μm.

[0328] When n = 4, it corresponds to... Figure 14 The mask pattern shown has a light-transmitting area to light-blocking area ratio of 0.21. The number of protrusions on the intersection line of the first surface and the first cross section of the spacer prepared by the mask pattern is 7, the number of protrusions is 6, the average pit depth is 0.04 μm, and the uniformity (3δ) of the spacer height PSH is 0.15 μm.

[0329] It should be noted that, for example Figure 13 He Ru Figure 14 The mask pattern shown has a light-transmitting area to light-blocking area ratio ranging from 0.1 to 0.3, for example, 0.11, 0.12, 0.13, 0.14, 0.15, 0.16, 0.17, 0.18, 0.19, 0.2, 0.21, 0.22, 0.23, 0.24, 0.25, 0.28.

[0330] For example Figure 15 The mask pattern shown has a light-transmitting area to light-blocking area ratio ranging from 0.22 to 2.05, for example, 0.23, 0.24, 0.25, 0.28, 0.3, 0.4, 0.5, 0.6, 0.65, 0.7, 0.75, 0.78, 0.8, 0.82, 0.85, 0.9, 1, 1.2, 1.5, 1.6, 1.7, 1.8, 1.9, 2.0.

[0331] Furthermore, based on the preceding calculations and analysis, the width *a* and spacing *b* of the light-blocking strips are further fitted. According to the actual exposure parameters, the slope and intercept of the linear relationship between the material's characteristic values ​​(PSH, TX, TY) and the spacing *b* can be expressed using a fourth-order equation of the light-blocking strip width *a*, specifically as follows:

[0332] For example Figure 15 The mask pattern shown is as follows:

[0333] (1) PSH=(-0.0025×a) 4 +0.0238×a 3 -0.081×a 2 +0.1199×a-0.1026)×b+(-0.0219×a 4 +0.2901×a 3 -1.4549×a 2 +3.2477×a+0.7139)

[0334] (2)TX=(-0.0803×a 4 +0.789×a 3 -3.1103×a 2 +6.5309×a-3.7095)×b+(1.46×a 4 -15.167×a 3 +59.915×a 2 -102.6×a+74.222)

[0335] (3)TY=(0.0252×a 4 -0.3229×a 3 +1.3121×a 2 -1.4135×a+1.72)×b+(-0.0749×a 4 +1.4349×a 3 -7.1753×a 2 +17.678×a-6.273);

[0336] In addition, for the color filter pattern located in the peripheral area BB, the ratio of the light-transmitting area to the light-blocking area in the corresponding mask pattern needs to be set to be within the range of 0.545μm±0.15μm. At this time, the film thickness of the part of the color filter pattern located in the peripheral area BB can be reduced by 0.1μm to 0.5μm compared with the part of the color filter pattern located in the display area AA, thereby improving the light leakage and yellowing problems that may occur in the peripheral area BB mentioned above.

[0337] The specific structure of the mask used to prepare the color filter pattern will not be described here. The pattern of the mask for preparing the color filter pattern can be referred to the pattern of the mask used to prepare the spacer in the previous text. In practical applications, depending on the thickness of the color filter pattern, the parameters such as the number of light-blocking strips n, the width of the light-blocking strips a, and the spacing of the light-blocking strips b in the above mask pattern can be adjusted to meet the requirements of different products or different areas of the same product for the thickness of the color filter pattern.

[0338] The above description is merely a specific embodiment of this application, but the scope of protection of this application is not limited thereto. Any variations or substitutions that can be easily conceived by those skilled in the art within the scope of the technology disclosed in this application should be included within the scope of protection of this application. Therefore, the scope of protection of this application should be determined by the scope of the claims.

Claims

1. A display substrate, wherein, include: Substrate and organic structures located on said substrate; The organic structure includes a first surface disposed away from the substrate; In a direction perpendicular to the plane containing the substrate, the difference between the maximum distance between the first surface and the substrate and the minimum distance between the first surface and the substrate is less than or equal to 0.06 μm; In a direction perpendicular to the plane containing the substrate, the distance from the geometric center of the first surface to the substrate is greater than or equal to the average distance from each point on the first surface to the substrate.

2. The display substrate according to claim 1, wherein, The organic structure includes a spacer, and the surface of the spacer away from the substrate is the first surface.

3. The display substrate according to claim 1, wherein, The organic structure includes a color filter pattern, the display substrate includes a display area and a peripheral area surrounding the display area, and the size of the portion of the color filter pattern located in the peripheral area along a direction perpendicular to the plane of the substrate is less than or equal to the size of the portion of the color filter pattern located in the display area along a direction perpendicular to the plane of the substrate. The surface on the side away from the substrate in the area where the color filter pattern in the peripheral region does not overlap with the adjacent color filter pattern is the first surface.

4. The display substrate according to claim 2 or 3, wherein, The first surface is provided with a plurality of protrusions and a plurality of pits, the pits being located between at least two of the protrusions; the protrusions are provided at the geometric center of the first surface.

5. The display substrate according to claim 4, wherein, The organic structure includes a first cross section, which is a cross section along a direction perpendicular to the plane of the substrate, and the intersection line of the first cross section and the first surface is parallel to the side of the first surface; The number of protrusions provided at the intersection line of the first surface and the first cross section is odd.

6. The display substrate according to claim 4, wherein, The organic structure includes a first cross section, which is a cross section along a direction perpendicular to the plane of the substrate, and the intersection line of the first cross section and the first surface passes through the geometric center of the first surface; The number of protrusions provided at the intersection line of the first surface and the first cross section is odd.

7. The display substrate according to claim 6, wherein, The orthographic projection of the first surface onto the substrate is a quadrilateral. The line of intersection of the first surface and the first cross section is parallel to the diagonal of the quadrilateral; Alternatively, the line of intersection of the first surface and the first cross section is parallel to the side of the quadrilateral.

8. The display substrate according to claim 4, wherein, The first surface includes a central region and an edge region surrounding the central region, and the geometric center of the first surface is located in the central region; The maximum distance between the portion of the protrusion located in the middle region and the substrate is greater than or equal to the maximum distance between the portion of the protrusion located in the edge region and the substrate.

9. The display substrate according to claim 2, wherein, A plurality of protrusions are provided at the outer contour position of the first surface, and the maximum distance between the portion of the protrusion at the outer contour position of the first surface and the substrate is less than or equal to the maximum distance between the other protrusions and the substrate.

10. The display substrate according to claim 9, wherein, The first surface includes a central region and an edge region surrounding the central region, and the geometric center of the first surface is located in the central region; The radius of curvature of the portion of the protrusion located in the middle region is less than or equal to the radius of curvature of the portion of the protrusion located in the edge region.

11. The display substrate according to claim 7, wherein, When the organic structure includes a spacer, the spacer includes a side surface, the side surface is an arc surface, and the intersection line between the side surface and the first cross section is an arc.

12. The display substrate according to claim 11, wherein, The radius of curvature of the arc gradually decreases along the direction away from the substrate.

13. The display substrate according to claim 7, wherein, When the organic structure includes the spacer, the distance between the vertices of two adjacent protrusions is equal to 1 / 2 to 1 / 6 of the size of the planar pattern of the spacer along a predetermined direction in a direction parallel to the plane of the substrate, wherein the predetermined direction is the direction in which one of the two adjacent protrusions points to the other protrusion.

14. The display substrate according to claim 7, wherein, The number of the pits provided at the intersection line of the first surface and the first cross section is even, and the number of the protrusions is greater than the number of the pits.

15. The display substrate according to claim 7, wherein, The number of protrusions provided at the intersection line of the first surface and the first cross section is any one of 3, 5, or 7.

16. The display substrate according to claim 1, wherein, Along a direction perpendicular to the plane of the substrate, the standard deviation of the size of the organic structure along a direction perpendicular to the plane of the substrate is less than or equal to 0.2 μm.

17. A display panel, wherein, Includes the display substrate as described in any one of claims 1-16.

18. A photomask, wherein, The mask is used to prepare a display substrate as described in any one of claims 1-16, wherein the mask includes a plurality of first slits, a plurality of first light-blocking strips arranged in the same direction and a plurality of second light-blocking strips arranged in the same direction are disposed in the first slits, the first light-blocking strips and at least one second light-blocking strip intersect each other, and the planar pattern of the pattern in the first slit is a mirror-symmetric pattern.

19. The photomask according to claim 18, wherein, The number of the first light-blocking strip and the second light-blocking strip are the same.

20. The photomask according to claim 19, wherein, The first light-blocking strip and the second light-blocking strip are arranged perpendicularly.

21. The photomask according to claim 20, wherein, The minimum spacing between two adjacent first light-blocking strips is equal to the minimum spacing between two adjacent second light-blocking strips, and the minimum spacing between two adjacent first light-blocking strips is greater than the width of the first light-blocking strip.

22. The photomask according to claim 21, wherein, The first light-blocking strip and the second light-blocking strip have the same structure and size. Any first light-blocking strip intersects with each of the second light-blocking strips, and any second light-blocking strip intersects with each of the first light-blocking strips.

23. The photomask according to claim 21, wherein, The first light-blocking strip includes a first group, a second group, and a third group; the second light-blocking strip includes a first group, a second group, and a third group. The first group of first light-blocking strips and the second group of first light-blocking strips each include two first light-blocking strips, the first group of second light-blocking strips and the second group of second light-blocking strips each include two second light-blocking strips, the third group of first light-blocking strips includes one first light-blocking strip, and the third group of second light-blocking strips includes one second light-blocking strip; The first group of first light-blocking strips and the first group of second light-blocking strips intersect to form a first closed ring. The second group of first light-blocking strips and the second group of second light-blocking strips intersect to form a second closed ring. The second closed ring is located inside the first closed ring. The third group of first light-blocking strips and the third group of second light-blocking strips intersect, and both intersect with the first closed ring and the second closed ring, respectively. The geometric center of the photomask is located at the intersection of the third group of first light-blocking strips and the third group of second light-blocking strips.

24. The photomask according to claim 22 or 23, wherein, The minimum spacing between two adjacent first light-blocking strips ranges from 2.5μm to 14μm, and the width of the first light-blocking strip ranges from 1μm to 4μm.

25. A method for preparing a display substrate, wherein, The method includes: Provide substrate; Forming a diaphragm material film; The spacer material film is patterned using the photomask as described in claim 22 to obtain a spacer; wherein the spacer includes a first surface disposed away from the substrate, and the first surface is provided with a plurality of protrusions and a plurality of pits, the pits being located between at least two of the protrusions; wherein the protrusions are disposed at the geometric center of the first surface; and in a direction perpendicular to the plane of the substrate, the difference between the maximum distance between the first surface and the substrate and the minimum distance between the first surface and the substrate is less than or equal to 0.06 μm.

26. The preparation method according to claim 25, wherein, The step of patterning the spacer material film using the mask as described in claim 23 to obtain the spacer includes: Determine the preset height and preset planar dimensions of the spacer; Determine two of the following three parameters in the photomask: the number of first light-blocking strips, the width of the first light-blocking strips, and the minimum spacing between two adjacent first light-blocking strips; wherein the number of first light-blocking strips is the same as the number of second light-blocking strips, the width of the first light-blocking strips is the same as the width of the second light-blocking strips, and the minimum spacing between two adjacent first light-blocking strips is the same as the minimum spacing between two adjacent second light-blocking strips. Obtain a preset relationship between the unknown parameter among the three parameters—the number of the first light-blocking strips, the width of the first light-blocking strips, and the minimum spacing between two adjacent first light-blocking strips—and the size parameter of the spacer. The unknown parameters of the photomask are determined based on the size parameters of the spacer and the preset relationship. The specifications of the mask are determined based on the three parameters of the mask, and then the mask is used to pattern the spacer material film to obtain the spacer.

27. The preparation method according to claim 26, wherein, The step of determining two of the three parameters in the photomask—the number of the first light-blocking strips, the width of the first light-blocking strips, and the minimum spacing between two adjacent first light-blocking strips—includes: Determine the number and width of the first light-blocking strips in the photomask.

28. The preparation method according to claim 27, wherein, The step of obtaining the preset relationship between the unknown parameter among the three parameters—the number of the first light-blocking strips, the width of the first light-blocking strips, and the minimum spacing between two adjacent first light-blocking strips—and the size parameter of the spacer includes: Obtain the preset relationship between the minimum spacing between two adjacent first light-blocking strips and the size parameters of the spacer; wherein the size parameters include height and planar dimensions.

29. The preparation method according to claim 28, wherein, The height of the spacer decreases as the minimum distance between two adjacent first light-blocking strips increases, and the planar dimensions of the spacer increase as the minimum distance between two adjacent first light-blocking strips increases; the minimum distance between two adjacent first light-blocking strips is the same as the minimum distance between two adjacent second light-blocking strips.

30. The preparation method according to claim 29, wherein, The planar dimensions of the spacer include dimensions in a first direction and dimensions in a second direction, wherein the first direction and the second direction are perpendicular; the dimension in the first direction increases as the minimum distance between two adjacent first light-blocking strips increases, and the dimension in the second direction increases as the minimum distance between two adjacent first light-blocking strips increases; the second direction is consistent with the extension direction of the first light-blocking strip, and the first direction is consistent with the extension direction of the second light-blocking strip.

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