Plasma processing apparatus

Abstract

The plasma processing apparatus includes: a chamber; comprising an RF electrode; a first RF power supply coupled with the chamber, capable of generating a first pulsed RF signal; a second RF power supply coupled with the RF electrode and capable of generating a second pulsed RF signal; a Vpp detector that detects a bias Vpp value between the second RF power source and the RF electrode; and a control unit. The control unit sets the electric power levels of the first and second pulse RF signals, determines a plurality of stages in one pulse period, sets the target value of the bias Vpp in the selected stage, acquires the representative value of the bias Vpp detected in each stage, and sets the target value of the bias Vpp in the selected stage. Based on the set electrical power level and the acquired representative value, the electrical power level of the first and second pulsed RF signals of the selected stage is adjusted such that the bias Vpp value becomes a target value.

Description

Technical Field

[0001] The present invention relates to a plasma processing apparatus. Background Art

[0002] In a plasma processing device, for example, by supplying RF (Radio Frequency) voltage to a substrate to be processed, ions and radicals generated by plasma are introduced into the substrate to perform processes such as etching. At this time, the voltage (Vpp) of the substrate is monitored and recorded as an indicator of the state of the process, and is used for prediction of process results, state monitoring, abnormality detection, etc. In addition, a technical solution for monitoring the peak voltage value of the pulsed RF bias voltage for feedback control has been proposed (Patent Document 1).

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Patent Application Publication No. 2010-504614.

[0006] Patent document 2: U.S. Patent Application Publication No. 2015 / 0262704. Summary of the invention

[0007] Technical problem to be solved by the invention

[0008] The present invention provides a plasma processing device capable of improving the stability of a process.

[0009] Technical means for solving technical problems

[0010] A plasma processing device in one embodiment of the present invention comprises: a chamber; a substrate support portion arranged in the chamber and including an RF electrode; a first RF power supply coupled to the chamber and configured to generate a first pulse RF signal having at least two electric power levels in each pulse period of a plurality of pulse periods; a second RF power supply coupled to the RF electrode and configured to generate a second pulse RF signal having at least two electric power levels in each pulse period of a plurality of pulse periods; a Vpp detector configured to detect a bias Vpp value between the second RF power supply and the RF electrode; and a control portion. The control unit is configured to be able to execute: step a1, setting at least two electric power levels of the first pulse RF signal; step a2, setting at least two electric power levels of the second pulse RF signal; step b, determining multiple stages within a pulse cycle among multiple pulse cycles, the state of at least one of the first pulse RF signal and the second pulse RF signal in each of the multiple stages being different from that in an adjacent stage; step c, setting a target value of the bias Vpp of at least one stage selected from the multiple stages determined in step b; step d, obtaining a representative value of the bias Vpp detected by the Vpp detector in each of the multiple stages; and step e, based on the electric power levels set in steps a1 and a2 and the representative value of the bias Vpp obtained in step d, adjusting the electric power level of at least one of the first pulse RF signal and the second pulse RF signal of at least one selected stage so that the representative value of the bias Vpp becomes the target value.

[0011] Effects of the Invention

[0012] According to the present invention, the stability of the process can be improved. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] Figure 1 FIG. 1 is a diagram showing an example of a plasma processing system according to the first embodiment of the present invention.

[0014] Figure 2 This is a block diagram showing an example of the functional configuration of the control unit in the first embodiment.

[0015] Figure 3 It is a diagram showing an example of the configuration of the measuring unit in the first embodiment.

[0016] Figure 4 This is a diagram showing an example of a phase in which a bias is determined according to a processing plan setting.

[0017] Figure 5 This is a diagram showing an example of a method of selecting points within a certain range from the average of each stage and averaging them.

[0018] Figure 6This is a diagram showing an example of acquisition of a sequence based on the delay time, average value acquisition time, and synchronization signal in a determined stage.

[0019] Figure 7 This is a diagram showing an example of determination of levels based on a one-dimensional cluster analysis method.

[0020] Figure 8 This is a diagram showing an example of the relationship between the square of Vpp and the bias power level in the square response method.

[0021] Fig. 9 This is a diagram showing an example of a timing chart of the first embodiment.

[0022] Fig.10 This is a flowchart showing an example of the adjustment process according to the first embodiment.

[0023] Fig.11 This is a diagram showing an example of a timing chart of the second embodiment.

[0024] Fig.12 FIG. 1 is a diagram showing an example of a plasma processing system according to a third embodiment.

[0025] Fig.13 This is a diagram showing an example of a timing chart of the third embodiment.

[0026] Fig.14 This is a flowchart showing an example of the adjustment process according to the third embodiment.

[0027] Fig.15 This is a diagram showing an example of a timing chart of the fourth embodiment.

[0028] Fig.16 This is a diagram showing an example of a timing chart of Modification 1 of the fourth embodiment.

[0029] Fig.17 This is a diagram showing an example of a timing chart of Modification 2 of the fourth embodiment.

[0030] Fig.18 This is a diagram showing an example of a computer that executes the adjustment program. DETAILED DESCRIPTION

[0031] Hereinafter, embodiments of the plasma processing apparatus of the present invention will be described in detail based on the drawings. In addition, the technology of the present invention is not limited to the following embodiments.

[0032] The Vpp value is closely related to the acceleration energy of the ions in the plasma process. For example, when the bias power for introducing ions into the substrate is controlled to a certain value, the Vpp value sometimes changes according to the load state of the plasma. In this regard, it is considered to control the bias power in a way that makes the Vpp value a certain value so that the ion energy is consistent with the required value. In addition, in the case of pulsing the plasma and / or the bias power, it is considered to use multi-level pulses to effectively utilize multiple ion energies to fine-tune the process. In the case of using multi-level pulses, for example, etching is performed on the high energy side, deposition is performed on the low energy side, and discharge is promoted at the off time. In order to improve the stability of the process using multi-level pulses, it is required to control the bias power in a way that makes the Vpp value a certain value at each level of the multi-level pulse, and to perform precise control of the ion energy in the pulsed plasma. Therefore, it is expected to improve the stability of the process by controlling the bias power (i.e., electricity) in a way that makes the Vpp value a certain value.

[0033] (First Embodiment)

[0034] [Structure of plasma processing system]

[0035] Hereinafter, a configuration example of a plasma processing system will be described. Figure 1 FIG. 1 is a diagram showing an example of a plasma processing system in the first embodiment of the present invention. Figure 1 As shown, the plasma processing system includes an inductively coupled plasma processing device 1 and a control unit 2. The inductively coupled plasma processing device 1 includes a plasma processing chamber 10, a gas supply unit 20, a power supply 30 and an exhaust system 40. The plasma processing chamber 10 includes a dielectric window. In addition, the plasma processing device 1 includes a substrate support unit 11, a gas introduction unit and an antenna 14. The substrate support unit 11 is arranged in the plasma processing chamber 10. The antenna 14 is arranged on or above the plasma processing chamber 10 (i.e., on or above the dielectric window 101). The plasma processing chamber 10 has a plasma processing space 10s defined by the dielectric window 101, the side wall 102 of the plasma processing chamber 10 and the substrate support unit 11. The plasma processing chamber 10 has at least one gas supply port for supplying at least one processing gas to the plasma processing space 10s and at least one gas exhaust port for exhausting gas from the plasma processing space. The plasma processing chamber 10 is grounded.

[0036] The substrate support portion 11 includes a main body 111 and a ring assembly 112. The main body 111 has a central region 111a for supporting a substrate W and an annular region 111b for supporting the ring assembly 112. A wafer is an example of a substrate W. The annular region 111b of the main body 111 surrounds the central region 111a of the main body 111 when viewed from above. The substrate W is arranged on the central region 111a of the main body 111, and the ring assembly 112 is arranged on the annular region 111b of the main body 111 in a manner of surrounding the substrate W on the central region 111a of the main body 111. Therefore, the central region 111a is also referred to as a substrate support surface for supporting the substrate W, and the annular region 111b is also referred to as a ring support surface for supporting the ring assembly 112.

[0037] In one embodiment, the main body 111 includes a base 1110 and an electrostatic chuck 1111. The base 1110 includes a conductive component. The conductive component of the base 1110 can function as a bias electrode. The electrostatic chuck 1111 is arranged on the base 1110. The electrostatic chuck 1111 includes a ceramic component 1111a and an electrostatic electrode 1111b arranged in the ceramic component 1111a. The ceramic component 1111a has a central area 111a. In one embodiment, the ceramic component 1111a also has an annular area 111b. In addition, other components surrounding the electrostatic chuck 1111, such as an annular electrostatic chuck and an annular insulating component, may also have an annular area 111b. In this case, the ring assembly 112 may be arranged on the annular electrostatic chuck or the annular insulating component, or on both the electrostatic chuck 1111 and the annular insulating component. In addition, at least one RF / DC electrode coupled to the RF (Radio Frequency) power supply 31 and / or the DC (Direct Current) power supply 32 described later may also be arranged in the ceramic component 1111a. In this case, at least one RF / DC electrode functions as a bias electrode. In addition, the conductive component of the base 1110 and at least one RF / DC electrode may also function as a plurality of bias electrodes. In addition, the electrostatic electrode 1111b may also function as a bias electrode. Therefore, the substrate support portion 11 includes at least one bias electrode.

[0038] The ring assembly 112 includes one or more ring-shaped components. In one embodiment, the one or more ring-shaped components include one or more edge rings and at least one cover ring. The edge ring is formed of a conductive material or an insulating material, and the cover ring is formed of an insulating material.

[0039] In addition, the substrate support portion 11 may include a temperature adjustment module, which is configured to adjust at least one of the electrostatic chuck 1111, the ring assembly 112 and the substrate to a target temperature. The temperature adjustment module may include a heater, a heat transfer medium, a flow path 1110a or a combination thereof. A heat transfer fluid such as brine or gas flows in the flow path 1110a. In one embodiment, the flow path 1110a is formed in the base 1110, and one or more heaters are arranged in the ceramic part 1111a of the electrostatic chuck 1111. In addition, the substrate support portion 11 may also include a heat transfer gas supply portion, which is configured to supply a heat transfer gas to the gap between the back side of the substrate W and the central area 111a.

[0040] The gas introduction portion is configured to be able to introduce at least one processing gas from the gas supply portion 20 into the plasma processing space 10s. In one embodiment, the gas introduction portion includes a central gas injection portion (CGI: Center Gas Injector) 13. The central gas injection portion 13 is arranged above the substrate support portion 11 and is installed in the central opening portion formed in the dielectric window 101. The central gas injection portion 13 has at least one gas supply port 13a, at least one gas flow path 13b and at least one gas introduction port 13c. The processing gas supplied to the gas supply port 13a is introduced into the plasma processing space 10s from the gas introduction port 13c through the gas flow path 13b. In addition, the gas introduction portion may also include one or more side gas injection portions (SGI: Side Gas Injector) in addition to or instead of the central gas injection portion 13, which are installed in one or more openings formed in the side wall 102.

[0041] The gas supply unit 20 may further include at least one gas source 21 and at least one flow controller 22. In one embodiment, the gas supply unit 20 is configured to supply at least one process gas from the respectively corresponding gas source 21 to the gas introduction unit via the respectively corresponding flow controller 22. Each flow controller 22 may also include, for example, a mass flow controller or a pressure-controlled flow controller. Moreover, the gas supply unit 20 may further include one or more flow modulation devices for modulating or pulsing the flow of at least one process gas.

[0042] The power supply 30 includes an RF power supply 31 coupled to the plasma processing chamber 10 via at least one impedance matching circuit. The RF power supply 31 is configured to supply at least one RF signal (RF power) to at least one bias electrode and the antenna 14. Thus, plasma can be formed from at least one processing gas supplied to the plasma processing space 10s. Therefore, the RF power supply 31 can function as at least a part of a plasma generating unit, which is configured to generate plasma from one or more processing gases in the plasma processing chamber 10. In addition, by supplying a bias RF signal to at least one bias electrode, a bias potential can be generated on the substrate W, and ions in the formed plasma can be introduced into the substrate W.

[0043] In one embodiment, the RF power supply 31 includes a first RF generating unit 31a and a second RF generating unit 31b. In addition, the RF power supply 31 may also include a synchronization signal generating unit 31c. The first RF generating unit 31a is coupled to the antenna 14 and is configured to generate a generating source RF signal (generating source RF electric power) for plasma generation via at least one impedance matching circuit. In one embodiment, the generating source RF signal has a frequency in the range of 10 MHz to 150 MHz. In one embodiment, the first RF generating unit 31a may be configured to generate a plurality of generating source RF signals having different frequencies. The generated one or more generating source RF signals are supplied to the antenna 14. In addition, the first RF generating unit 31a is an example of a first RF power supply.

[0044] The second RF generating unit 31b is coupled to at least one bias electrode via at least one impedance matching circuit, and is configured to generate a bias RF signal (bias RF electric power). The frequency of the bias RF signal may be the same as or different from the frequency of the generating source RF signal. In one embodiment, the bias RF signal has a frequency lower than the frequency of the generating source RF signal. In one embodiment, the bias RF signal has a frequency in the range of 100kHz to 60MHz. In one embodiment, the second RF generating unit 31b may also be configured to generate a plurality of bias RF signals having different frequencies. The generated one or more bias RF signals are supplied to at least one bias electrode. In addition, in various embodiments, at least one of the generating source RF signal and the bias RF signal may also be pulsed. In addition, the second RF generating unit 31b is an example of a second RF power supply.

[0045] The synchronization signal generating unit 31c generates a synchronization signal for synchronizing the first RF generating unit 31a and the second RF generating unit 31b. The synchronization signal generating unit 31c supplies the generated synchronization signal to the first RF generating unit 31a and the second RF generating unit 31b to synchronize, for example, the pulsed generation source RF signal and the bias RF signal. In addition, the synchronization signal generating unit 31c supplies the synchronization signal to the control unit 2, so that the synchronization signal is used as a timing signal in the adjustment process of the RF signal executed by the control unit 2.

[0046] For example, the first RF generator 31a is electrically connected to the antenna 14 via a conductive portion 33a such as wiring. An impedance matching circuit 34a is provided on the conductive portion 33a. The impedance matching circuit 34a matches the output impedance of the first RF generator 31a with the input impedance of the load side (the antenna 14 side). In addition, the impedance matching circuit 34a is an example of a first matching device. The first RF generator 31a supplies a generation source RF signal for generating plasma to the antenna 14.

[0047] In addition, for example, the second RF generating unit 31b is electrically connected to the conductive component of the base of the substrate supporting unit 11 via the conductive portion 33b such as wiring. An impedance matching circuit 34b is provided in the conductive portion 33b. The impedance matching circuit 34b matches the output impedance of the second RF generating unit 31b with the input impedance of the load side (substrate supporting unit 11 side). In addition, the impedance matching circuit 34b is an example of a second matching device. The second RF generating unit 31b supplies a bias RF signal for introducing ion components in the plasma into the substrate W to the conductive component of the substrate supporting unit 11.

[0048] The plasma processing apparatus 1 is provided with a measuring unit 35 for measuring either voltage or current at an electrode arranged in the plasma processing chamber 10 or at a wiring connected to the electrode. In the present embodiment, the measuring unit 35 is provided at the conductive portion 33b connected to the conductive member of the substrate support portion 11. The measuring unit 35 is configured to include a probe for detecting voltage and current, and measures voltage and current. The measuring unit 35 measures the voltage and current of the conductive portion 33b through which the bias RF signal flows, and outputs a signal indicating the measured voltage and current to the control unit 2 described later. In addition, the measuring unit 35 is an example of a Vpp detector.

[0049] In addition, the power supply 30 may also include a DC power supply 32 coupled to the plasma processing chamber 10. The DC power supply 32 includes a bias DC generator 32a. In one embodiment, the bias DC generator 32a is connected to at least one bias electrode and is configured to generate a bias DC signal. The generated bias DC signal is applied to at least one bias electrode.

[0050] In various embodiments, the bias DC signal may also be pulsed. In this case, a sequence of voltage pulses is applied to at least one bias electrode. The voltage pulse may have a pulse waveform of a rectangle, a trapezoid, a triangle, or a combination thereof. In one embodiment, a waveform generating unit for generating a sequence of voltage pulses from a DC signal is connected between the bias DC generating unit 32a and at least one bias electrode. Therefore, the bias DC generating unit 32a and the waveform generating unit constitute a voltage pulse generating unit. The voltage pulse may have a positive polarity or a negative polarity. In addition, the sequence of voltage pulses may also include one or more positive polarity voltage pulses and one or more negative polarity voltage pulses in one cycle. In addition, a bias DC generating unit 32a may be provided in addition to the RF power supply 31, or a DC generating unit 32a may be provided instead of the second RF generating unit 31b.

[0051] The antenna 14 includes one or more coils. In one embodiment, the antenna 14 may also include an outer coil and an inner coil coaxially arranged. In this case, the RF power supply 31 may be connected to both the outer coil and the inner coil, or to any one of the outer coil and the inner coil. In the former case, the same RF generating unit may be connected to both the outer coil and the inner coil, or different RF generating units may be connected to the outer coil and the inner coil, respectively.

[0052] The exhaust system 40 can be connected to the gas exhaust port 10e provided at the bottom of the plasma processing chamber 10, for example. The exhaust system 40 can also include a pressure regulating valve and a vacuum pump. The pressure in the plasma processing space 10s can be adjusted by the pressure regulating valve. The vacuum pump can include a turbomolecular pump, a dry pump, or a combination thereof.

[0053] The control unit 2 processes computer executable commands that cause the plasma processing device 1 to perform the various steps described in this specification. The control unit 2 can be configured to control the various elements of the plasma processing device 1 to perform the various steps described herein. In one embodiment, a part or all of the control unit 2 can be included in the plasma processing device 1. The control unit 2 can include a processing unit 2a1, a storage unit 2a2, and an external interface 2a3. The control unit 2 is implemented, for example, by a computer 2a. The processing unit 2a1 can be configured to perform various control actions by reading a program from the storage unit 2a2 and executing the read program. The program can be pre-stored in the storage unit 2a2, or it can be obtained via a medium when necessary. The obtained program is stored in the storage unit 2a2, and is read and executed from the storage unit 2a2 by the processing unit 2a1. The medium can be various storage media readable by the computer 2a, or it can be a communication line connected to the external interface 2a3. The processing unit 2a1 can be a CPU (Central Processing Unit: Central Processing Unit). The storage unit 2a2 may include a RAM (Random Access Memory), a ROM (Read Only Memory), a HDD (Hard Disk Drive), an SSD (Solid State Drive), or a combination thereof. The external interface 2a3 may communicate with the plasma processing device 1 via a communication line such as a LAN (Local Area Network).

[0054] Next, use Figure 2 The functional structure of the control unit 2 will be described. Figure 2 1 is a block diagram showing an example of the functional structure of the control unit in the first embodiment. The control unit 2 controls each part of the plasma processing device 1. The operation of the plasma processing device 1 is comprehensively controlled by the control unit 2. The control unit 2 controls the plasma processing device 1 to execute the various steps described in the present invention. Figure 2 As shown, the control unit 2 includes a processing unit 2a1, a storage unit 2a2, an external interface 2a3, and a user interface (user interface) 2a4.

[0055] The processing unit 2 a 1 includes a CPU and controls each unit of the plasma processing apparatus 1 .

[0056] The storage unit 2a2 stores a control program (software) for implementing various processes performed by the plasma processing device 1 through the control of the processing unit 2a1, and a technical solution storing processing condition data, etc. In addition, the control program and the processing solution can also be stored in a computer recording medium (such as a hard disk, a DVD (Digital Versatile Disc) or other optical disk, a floppy disk, a semiconductor memory, etc.) that can be read by a computer. In addition, the control program and the processing solution can also be transmitted from other devices via a dedicated line at any time and used online.

[0057] The external interface 2a3 can communicate with various parts of the plasma processing device 1 and input and output various data. For example, a signal indicating a voltage or current measured by the measuring unit 35 can be input to the external interface 2a3. In addition, a synchronization signal generated by the synchronization signal generating unit 31c can be input to the external interface 2a3.

[0058] The user interface 2 a 4 is composed of a keyboard for the process manager to input commands for managing the plasma processing apparatus 1 , a display for visually displaying the operating status of the plasma processing apparatus 1 , and the like.

[0059] The processing unit 2a1 has an internal memory for storing programs and data, reads out the control program stored in the storage unit 2a2, and executes the process of the read control program. The processing unit 2a1 operates according to the control program and functions as various processing units. For example, the processing unit 2a1 has the function of the plasma control unit 130.

[0060] The plasma control unit 130 controls the plasma processing. For example, the plasma control unit 130 controls the exhaust system 40 to exhaust the plasma processing chamber 10 to a predetermined vacuum level. The plasma control unit 130 controls the gas supply unit 20 to introduce the processing gas from the gas supply unit 20 into the plasma processing space 10s. The plasma control unit 130 controls the power supply 30 to supply the generation source RF signal and the bias RF signal from the first RF generation unit 31a and the second RF generation unit 31b in coordination with the introduction of the processing gas, thereby generating plasma in the plasma processing chamber 10.

[0061] The plasma processing device 1 of the present embodiment performs cyclic etching, for example. The plasma control unit 130 controls the RF power supply 31, and supplies high-frequency electric power from the RF power supply 31 in a pulsed manner. The RF power supply 31 supplies at least one of the source RF signal and the bias RF signal in a pulsed manner. For example, the plasma control unit 130 controls the RF power supply 31, and supplies the source RF signal and the bias RF signal in a pulsed manner from the first RF generating unit 31a and the second RF generating unit 31b, respectively. Here, "supplying in a pulsed manner" includes the case where the supply of the source RF signal and the bias RF signal is turned on (On) and turned off (Off) in a certain pattern. In addition, "supplying in a pulsed manner" also includes the case where multiple power levels (High / Low / Off: high / low / off) of the source RF signal and the bias RF signal are repeatedly supplied in a certain pattern. That is, the source RF signal and the bias RF signal each have multiple power levels in a repeated cycle. In one embodiment, the multiple power levels include a first power level and a second power level that is smaller than the first power level. In one embodiment, the plurality of electric power levels include a first electric power level, a second electric power level smaller than the first electric power level, and a third electric power level smaller than the second electric power level. The third electric power level may be a zero electric power level or may be greater than a zero electric power level. The frequency of the pulse is, for example, 100 Hz to 10 kHz. Hereinafter, the generating source RF signal with a higher frequency among the generating source RF signal and the bias RF signal is also referred to as HF (High Frequency), and the bias RF signal with a lower frequency is also referred to as LF (Low Frequency).

[0062] In addition, the plasma control unit 130 controls at least one of the first RF generation unit 31a and the second RF generation unit 31b to adjust the power level of at least one of the source RF signal and the bias RF signal so that the Vpp value calculated based on the signal input from the measurement unit 35 becomes the set Vpp value. The plasma control unit 130 includes a setting unit 131, a determination unit 132, an acquisition unit 133, and an adjustment unit 134 to adjust the power levels thereof.

[0063] The setting unit 131 reads out the processing scheme from the storage unit 2a2, and sets the electric power level of at least one of the generating source RF signal and the bias RF signal based on the processing scheme. The setting unit 131 sets at least two electric power levels of the generating source RF signal generated by the first RF generating unit 31a to the first RF generating unit 31a. In addition, the generating source RF signal is an example of the first pulse RF signal. In addition, the setting unit 131 sets at least two electric power levels of the bias RF signal generated by the second RF generating unit 31b to the second RF generating unit 31b. In addition, the bias RF signal is an example of the second pulse RF signal. In addition, one of the two electric power levels set for the generating source RF signal and the bias RF signal may be zero. The setting unit 131 stores the set electric power level of at least one of the generating source RF signal and the bias RF signal in the storage unit 2a2.

[0064] The decision unit 132 determines the pulse cycle based on the processing scheme. In addition, the decision unit 132 can also determine the pulse cycle of the bias Vpp value based on the synchronization signal input from the synchronization signal generating unit 31c. And, the decision unit 132 determines a plurality of stages in one pulse cycle based on the processing scheme using the method described later. The decision unit 132 detects the representative value of the bias Vpp of each stage within the determined pulse cycle. In addition, the decision unit 132 can also use the one-dimensional cluster analysis method described later, for example, to determine the bias Vpp value of each level, and detect the representative value of Vpp of each stage based on the correspondence between each level and the stage set by the user. In addition, the set levels are expressed in the form of level L1 and level L2, for example, in the order of the bias Vpp value from large to small. In addition, in the following description, a series of data used to obtain the average value of the bias Vpp value at each level of the pulse waveform of the signal measured by the measuring unit 35 is expressed as a sequence.

[0065] Here, use Figures 3 to 7 , the steps from obtaining the bias Vpp value to determining the bias stage are explained. Figure 3 FIG. 1 is a diagram showing an example of the structure of the measuring unit in the first embodiment. Figure 3 As shown, in the measurement unit 35, in order to digitize the analog measurement value, for example, a technical method such as structures 35a to 35c can be used. In addition, in the structures 35a to 35c, in order to measure two frequencies (for example, 13 MHz and 400 kHz) in the second RF generation unit 31b, two systems are detected for voltage and current.

[0066] The structure 35a detects voltage, current and phase using an analog detection IC (Integrated Circuit), and digitizes them using an A / D (Analog / Digital) converter. In the structure 35a, as an A / D converter, for example, a 100 k / s, 6 ch, i.e., a 6-channel converter with a sampling frequency of 100 kHz is used. The digital data output from the A / D converter is input to the plasma control unit 130 (in Figure 3 (CPU in the figure).

[0067] Structure 35b is a structure that combines heterodyne and IQ (In-phase Quadrature-phase) detection. After conversion to an intermediate frequency, it is digitized by an A / D converter. In structure 35b, as an A / D converter, for example, a 400 k / s, 4-channel converter with a sampling frequency of 400 kHz is used. The digital data output from the A / D converter is input to the plasma control unit 130 (in Figure 3 In the figure, there are CPU and FPGA (Field Programmable Gate Array). In addition, in the CPU and FPGA, signal processing is performed by DFT (Discrete Fourier Transform).

[0068] Configuration 35c is a fully digital method, and the analog signal is digitized by an A / D converter. In configuration 35c, as an A / D converter, for example, a 100M / s, 2ch, i.e., a 2-channel converter with a sampling frequency of 100MHz is used. The digital data output from the A / D converter is input to the plasma control unit 130 (in Figure 3 In the CPU and FPGA, the signal processing is performed by FFT (Fast Fourier Transform). That is, in the structure 35c, high-speed sampling of more than twice the RF frequency is performed, and the amplitude is extracted by performing a fast Fourier transform for each certain (fixed) number of data.

[0069] In the measuring unit 35, using any of the above three methods, a signal corresponding to the amplitude and phase difference of the current / voltage is obtained at a high speed and continuously over a period of more than one pulse cycle at a sampling speed (sampling rate) of at least 10 times the pulse frequency. The measuring unit 35 calculates the value of Vpp at each moment based on the acquired amplitude and phase difference of the current and voltage at each moment. In this way, time series data of Vpp that is continuous over a period of more than one pulse cycle is obtained.

[0070] Figure 4 This is a diagram showing an example of the stage of determining the offset according to the processing plan setting. Figure 4 The timing chart 50a shown shows the case where the generation source RF signal (generation source power) is supplied in addition to the bias RF signal (bias power). Table 50b summarizes the various stages when the generation source RF signal and the bias RF signal are supplied. That is, Figure 4 This is a case where the stage is determined based on a combination of ON / OFF (on / off) and power levels of the first RF generator 31a and the second RF generator 31b. In this case, the decision unit 132 switches the stage at least at the timing of switching ON / OFF of the second RF generator 31b (bias RF signal). In addition, the decision unit 132 may switch the stage at the timing when the bias Vpp value is to be changed.

[0071] The method of obtaining the representative value of Vpp in each stage based on the time series data of Vpp is described. The simplest method is a method of using the average value of multiple Vpp obtained from the beginning to the end of each stage as the representative value based on the synchronization signal and the stage information. This method has the advantage of being able to be executed at high speed through simple calculations, but there is a case where the value changes due to the influence of the transient state (transition state) in the switching of stages.

[0072] Therefore, the average value of a plurality of Vpp values ​​obtained from the beginning to the end of each stage is obtained, and then only values ​​within a certain range (for example, 1× standard deviation or 2× standard deviation) from the average value are collected, and the average of the collected values ​​is obtained. In this way, the value that deviates greatly from the average value obtained for the first time can be obtained = the average value after removing the transition value. Figure 5 This is a diagram showing an example of a method of picking up points within a certain range from the average of the stage for each stage and taking the average. Figure 5 As shown in the timing diagram 51, only the average value from phase Ph1 to 1× standard deviation ( Figure 5 In the range of ±1σ of stage Ph1, the average of the collected values ​​is obtained. In addition, only the values ​​from the average value of stage Ph2 to 1× standard deviation ( Figure 5 In the range of ±1σ of stage Ph2, the average of the collected values ​​is obtained.

[0073] As another method of removing transient values ​​(transient values), there is a method of setting a delay period at the beginning of each stage and obtaining an average of a plurality of Vpp acquired during a certain period of time after the delay time in each stage. The decision unit 132 determines the ON period of the second RF generation unit 31b, that is, the target Vpp value in each stage, the delay time from the beginning of one cycle, and the average value acquisition period based on the process plan.

[0074] exist Figure 4 In the example, in the bias phase Ph1, the electric power of the source RF signal is generated ( Figure 4 In the biased stage Ph2, the generated source electric power is determined to be 200 W, the target Vpp value is determined to be Vpp2, the delay from the beginning of a cycle is determined to be d2, and the sequence period is determined to be p2. In addition, in the biased stage Ph3, the generated source electric power is determined to be 200 W, the target Vpp value is determined to be Vpp3, the delay from the beginning of a cycle is determined to be d3, and the sequence period is determined to be p3. Furthermore, in the biased stage Ph4, the generated source electric power is determined to be 0 W, the target Vpp value is determined to be Vpp4, the delay from the beginning of a cycle is determined to be d4, and the sequence period is determined to be p4. In addition, in Figure 4 In the example, the period in which the bias RF signal is zero is not considered as a stage.

[0075] Figure 6 FIG. 1 is a diagram showing an example of obtaining a sequence based on the delay time, average value acquisition time, and synchronization signal in the determined stage. Figure 6 As shown in the timing diagram 52 of FIG. 5 , the decision unit 132 determines the delay times d1 and d2 of the phases Ph1 and Ph2 and the period for acquiring the first sequence and the second sequence based on the synchronization signal. Figure 6 In the example, the first sequence corresponds to level L1 and the second sequence corresponds to level L2.

[0076] Figure 7 This is a diagram showing an example of determining a level based on a one-dimensional cluster analysis method. This method is a method of obtaining the Vpp value of each level by averaging data points within a certain range based on the frequency distribution of Vpp when a synchronization signal cannot be obtained, excluding transient level values ​​that deviate from the level value. Figure 7The timing diagram 53 shown is a case where the levels L1 and L2 are determined based on the frequency distribution of the bias Vpp value using a one-dimensional cluster analysis method. The decision unit 132 divides the waveform data (the entire sequence, the first data group) of the bias Vpp value of the entire pulse period into multiple groups based on the average value, for example. Among them, the entire sequence corresponds to the pulse period Pc of the timing diagram 52. The decision unit 132 extracts the second data group contained in the valid group among the divided multiple groups, and obtains the statistical value of each group based on the extracted second data group. The decision unit 132 determines the levels L1 and L2 based on the statistical value of each group. In this way, it is possible to remove transient states (transition states) with deviated values ​​and only use stable states (steady states) with close values ​​to obtain representative values.

[0077] return Figure 4 , the decision unit 132 associates the measured bias Vpp value with the bias stages Ph1 to Ph4. When the delay time is known, the decision unit 132 associates the measured bias Vpp value with the corresponding stage based on the delay time. On the other hand, when the delay time is not known, the decision unit 132 associates the measured bias Vpp value with the corresponding stage based on the arrangement order of the pulses of the measured bias Vpp value and the measured value. In addition, the decision unit 132 may accept input of data associated with the bias Vpp value based on the arrangement order of the pulses assumed according to the process plan from the step manager.

[0078] return Figure 2 Description. When the stages, delay time and period of acquiring a sequence within a pulse cycle are determined in the decision unit 132, the acquisition unit 133 acquires a sequence of bias Vpp values ​​in each stage. That is, the acquisition unit 133 acquires a sequence of multiple bias Vpp values ​​(a data group of bias Vpp values) detected by the measuring unit 35 after the delay time in each stage. At this time, the acquisition unit 133 may also repeatedly acquire the sequence in multiple pulse cycles. That is, the acquisition unit 133 may also continuously acquire the sequence at a certain interval. In addition, the acquisition unit 133 may also acquire the sequence at a period of more than 10 times the pulse frequency of multiple pulse cycles. Thereby, the resolution can be improved. The acquisition unit 133 obtains a representative value of the bias Vpp value based on the sequence of bias Vpp values ​​acquired. That is, the acquisition unit 133 acquires a representative value of the bias Vpp value detected by the measuring unit 35 in each stage of the multiple stages. The acquisition unit 133 outputs the representative value of the acquired bias Vpp value to the adjustment unit 134.

[0079] When the representative value of the bias Vpp value is input from the acquisition unit 133, the adjustment unit 134 refers to the storage unit 2a2 and obtains the set power level of at least one of the generated source RF signal and the bias RF signal. That is, the adjustment unit 134 sets the target value of the bias Vpp value of at least one stage selected from the determined multiple stages. Based on the set power level and the representative value of the bias Vpp value, the adjustment unit 134 adjusts the power level of at least one of the generated source RF signal and the bias RF signal in each stage so that the bias Vpp value becomes the target value. That is, the adjustment unit 134 controls the first RF generation unit 31a and the second RF generation unit 31b for each stage, and adjusts the power levels of the generated source RF signal and the bias RF signal so that the average value of the sequence of the input bias Vpp values, that is, the representative value, is close to the target Vpp value (Vpp setting value).

[0080] The adjustment unit 134 adjusts the power level of at least one of the source RF signal and the bias RF signal by, for example, PID (Proportional Integral Differential) control. In this case, the relationship between the bias Vpp value and the power level is not particularly assumed. In addition, the control parameters may be changed according to the process conditions.

[0081] In addition, for example, the adjustment unit 134 may also adjust the power level of at least one of the generated source RF signal and the bias RF signal by controlling based on the relationship between the bias Vpp value and the power level. In this case, the adjustment unit 134 predicts the next (subsequent) power level using the relationship between the bias power level and the square of the bias Vpp value. This adjustment method differs from the PID control that assumes a linear response in that a square response is assumed and that control is performed in a ratio rather than an increment. In the following description, this adjustment method is also referred to as the square response (Sq.Response) method. In the square response method, the next power level (RF_Power n ).

[0082] k=SV 2 / PV 2 …(1)

[0083]

[0084] RF_Power n =RF_Power n-1 ×(1+(k-1)×VppControlCoefficient)… (3)

[0086] Here, PV represents the Vpp measured value, SV represents the Vpp set value, and k MAX Indicates the upper limit value of k. In addition, VppControlCoefficient indicates the damping coefficient.

[0087] Next, use Figure 8 The relationship between the square of Vpp and the bias power level in the square response method will be described. Figure 8 This is a diagram showing an example of the relationship between the square of Vpp and the bias power level in the square response method. Figure 8 In Graph 54, the square of Vpp is represented as “V 2 ". In addition, the bias electric power level (P) can be expressed by the following formula (4). In addition, formula (4) expresses the above formulas (1) to (3) in other forms.

[0088] P=R(V / Z) 2 …(4)

[0089] Here, R represents the load resistance, and Z represents the load impedance. In formula (4), if R and Z are assumed to be constant, then in the calculation of the bias power level to obtain the required Vpp, as shown in graph 54, it is not the ratio of V but the ratio of the square of V. That is, in the square response method, using the relationship in graph 54, the current power level is adjusted to the next power level so that the square of the Vpp measured value approaches the square of the Vpp set value.

[0090] [Sequence diagram of first embodiment]

[0091] Next, use Fig. 9 The pulse waveform in the first embodiment will be described. Fig. 9 FIG. 1 is a diagram showing an example of a timing chart of the first embodiment. Fig. 9 In the timing diagram 55 shown, the generation source RF signal (generation source electric power) and the bias RF signal (bias electric power) are supplied at different timings. The electric power levels of the generation source RF signal and the bias RF signal are the first electric power level (high) and the zero level. In addition, in the timing diagram 55, the bias RF signal is adjusted so that the bias Vpp value becomes constant.

[0092] In the timing diagram 55, the generator RF signal and the bias RF signal are synchronized by a synchronization signal (e.g., 1kHz). In addition, in the timing diagram 55, there is a portion where the generator RF signal overlaps with the bias RF signal, and the bias Vpp value is three levels of level L1, L2, and zero level. That is, the level L1 of the bias Vpp value is a combination of the zero level of the generator RF signal and the first electric power level of the bias RF signal. In addition, the level L2 of the bias Vpp value is a combination of the first electric power level of the generator RF signal and the first electric power level of the bias RF signal. Therefore, the bias stage becomes the stage Ph1 and Ph2 corresponding to the levels L1 and L2, respectively. That is, the state of at least one of the generator RF signal and the bias RF signal of each of the multiple stages is different from that of the adjacent stage. In addition, in the stages Ph1 and Ph2, the first sequence and the second sequence are acquired based on the synchronization signal (timing signal).

[0093] [Adjustment method of the first embodiment]

[0094] Next, use Fig.10 The adjustment method of the first embodiment will be described. Fig.10 This is a flowchart showing an example of the adjustment process according to the first embodiment.

[0095] In the adjustment process of the first embodiment, the case where the plasma processing of the substrate W placed in the central area 111a of the main body 111 of the substrate support part 11 in the plasma processing apparatus 1 is described as an example, and the description of the actions of the plasma processing other than the adjustment process of the plasma control part 130 is omitted.

[0096] The setting unit 131 reads the processing plan from the storage unit 2a2, and sets the power levels of the source RF signal and the bias RF signal for the first RF generating unit 31a and the second RF generating unit 31b based on the processing plan (step S1). The setting unit 131 stores the set power levels of the source RF signal and the bias RF signal in the storage unit 2a2. Thereafter, the plasma control unit 130 controls each part of the plasma processing device 1 to start plasma processing.

[0097] The decision unit 132 determines the pulse period of the bias Vpp value based on the synchronization signal input from the synchronization signal generating unit 31c and the bias Vpp value input from the measuring unit 35. The decision unit 132 detects the bias Vpp value of each level within the determined pulse period and determines each level. The decision unit 132 determines a plurality of stages within the determined one pulse period based on the synchronization signal and the determined levels (step S2). In addition, the decision unit 132 determines the delay time of each stage and the detection period of a plurality of bias Vpps (the period of acquiring the sequence) based on the synchronization signal.

[0098] When the acquisition unit 133 determines each stage, the delay time, and the period of the acquisition sequence in one pulse cycle in the determination unit 132, the acquisition unit 133 acquires the sequence of the bias Vpp value in each stage (step S3). The acquisition unit 133 obtains the representative value of the bias Vpp value based on the acquired sequence of the bias Vpp value. That is, the acquisition unit 133 acquires the representative value of the bias Vpp value detected by the measurement unit 35 in each of the multiple stages. The acquisition unit 133 outputs the acquired representative value of the bias Vpp value to the adjustment unit 134.

[0099] When the representative value of the bias Vpp value is input from the acquisition unit 133, the adjustment unit 134 refers to the storage unit 2a2 to obtain the set electric power level (i.e., power level) of the bias RF signal. That is, the adjustment unit 134 sets the target value of the bias Vpp value of at least one stage selected from the determined multiple stages. The adjustment unit 134 adjusts the electric power level of the bias RF signal of each stage based on the set electric power level and the representative value of the bias Vpp value so that the bias Vpp value becomes the target value. That is, the adjustment unit 134 controls the second RF generation unit 31b for each stage to adjust the electric power level of the bias RF signal so that the input bias Vpp value becomes the target value (step S4). In addition, the bias Vpp value becomes the target value, in other words, the average value of the sequence of the above-mentioned bias Vpp values, that is, the representative value is close to the target Vpp value (Vpp set value). In addition, the adjustment unit 134 can also control the first RF generation unit 31a to adjust the electric power level of the generated source RF signal.

[0100] The adjustment unit 134 determines whether the adjustment process is to be terminated based on the adjustment result of the electric power level of the bias RF signal (step S5). That is, the adjustment unit 134 determines whether the bias Vpp value has reached the target value and whether the adjustment process can be terminated. If the adjustment unit 134 determines that the adjustment process is not to be terminated (step S5: No), the adjustment unit 134 returns to step S3 and continues to adjust the electric power level of the bias RF signal. On the other hand, if the adjustment unit 134 determines that the adjustment process is to be terminated (step S5: Yes), the adjustment process is terminated. In this way, the bias electric power can be controlled so that the Vpp value reaches the target value (constant value). That is, the stability of the process can be improved.

[0101] (Second Embodiment)

[0102] In the first embodiment described above, the case of generating the source RF signal and the bias RF signal at two levels is described, but each may be multiplied to three or more levels, and the embodiment in this case will be described as the second embodiment. In addition, the plasma processing apparatus in the second embodiment is the same as that in the first embodiment described above, and therefore the description of the repeated structure and operation thereof will be omitted.

[0103] [Sequence diagram of the second embodiment]

[0104] Fig.11 FIG. 2 is a diagram showing an example of a timing chart of the second embodiment. Fig.11 In the timing diagram 56 shown, a multi-leveled source RF signal (source power) and a bias RF signal (bias power) are supplied at different timings. The power levels of the source RF signal and the bias RF signal are respectively two levels, namely, a first power level (high) and a second power level (low), and a zero level (third power level). In the timing diagram 56, the bias RF signal is adjusted so that the levels L1 and L2 of the bias Vpp value become constant.

[0105] In the timing diagram 56, the generator RF signal and the bias RF signal are synchronized by the synchronization signal. In addition, in the timing diagram 56, there is a portion where the generator RF signal of each power level overlaps with the bias RF signal, and the bias Vpp value is 5 levels of levels L1 to L4 and zero level. That is, the level L1 of the bias Vpp value is a combination of the zero level of the generator RF signal and the first power level of the bias RF signal. In addition, the level L2 of the bias Vpp value is a combination of the first power level of the generator RF signal and the first power level of the bias RF signal. In addition, the level L3 of the bias Vpp value is a combination of the zero level of the generator RF signal and the second power level of the bias RF signal. In addition, the level L4 of the bias Vpp value is a combination of the second power level of the generator RF signal and the second power level of the bias RF signal. Therefore, the stage of the bias becomes the stage Ph1 to Ph4 corresponding to the levels L1 to L4 respectively. In addition, in the stages Ph1 to Ph4, based on the synchronization signal (timing signal), the first sequence to the fourth sequence are acquired.

[0106] The adjustment unit 134 controls the second RF generation unit 31b based on the set power levels of the bias RF signal and the acquired first and second sequences to adjust the bias RF signal so that the levels L1 and L2 of the bias Vpp value become constant. In addition, the adjustment unit 134 controls the second RF generation unit 31b based on the set power levels of the bias RF signal and the acquired third and fourth sequences to adjust the bias RF signal so that the input power of the levels L3 and L4 of the bias Vpp value become constant.

[0107] The adjustment process in the second embodiment is Fig.10According to the second embodiment, even when the source RF signal and the bias RF signal are multi-leveled, the bias power can be controlled so that the Vpp value of the required stage becomes a constant value.

[0108] (Third Embodiment)

[0109] In the second embodiment described above, the bias RF signal has a single frequency. However, bias RF signals having two frequencies may be supplied. This embodiment will be described as a third embodiment.

[0110] Fig.12 1 is a diagram showing an example of a plasma processing system in a third embodiment. In addition, by marking the same reference numerals for the same structures as those in the plasma processing system of the first embodiment, descriptions of repeated structures and operations are omitted. The plasma processing apparatus 1a of the third embodiment is different from the plasma processing apparatus 1 of the first embodiment in that the RF power supply 31 includes a third RF generating unit.

[0111] The plasma processing apparatus 1a of the third embodiment includes a power supply 30a. The power supply 30a includes an RF power supply 31d and a DC power supply 32. The RF power supply 31d includes a first RF generator 31a, a second RF generator 31b, a synchronization signal generator 31c, and a third RF generator 31e.

[0112] The third RF generating unit 31e is coupled to at least one bias electrode via at least one impedance matching circuit similarly to the second RF generating unit 31b, and is configured to generate a second bias RF signal (bias RF electric power). In addition, in the third embodiment, the bias RF signal generated by the second RF generating unit 31b is referred to as a first bias RF signal. The frequency of the second bias RF signal may be the same as or different from the frequency of the generating source RF signal. In addition, the frequency of the second bias RF signal is different from the frequency of the first bias RF signal. In addition, the third RF generating unit 31e is electrically connected to the conductive component of the base of the substrate supporting unit 11 via a conductive portion 33b such as wiring similarly to the second RF generating unit 31b.

[0113] In one embodiment, the second bias RF signal has a frequency lower than the frequency of the generating source RF signal and the first bias RF signal. In one embodiment, the second bias RF signal has a frequency in the range of 100kHz to 60MHz. For example, the frequency of the first bias RF signal can be set to 13MHz, and the frequency of the second bias RF signal can be set to 400kHz. In one embodiment, the third RF generating unit 31e can also be configured to be included in the second RF generating unit 31b. The generated second bias RF signal is supplied to at least one bias electrode. In addition, in various embodiments, at least one of the generating source RF signal, the first bias RF signal, and the second bias RF signal can also be pulsed. Among them, the third RF generating unit 31e is an example of a third RF power supply.

[0114] [Sequence chart of the third embodiment]

[0115] Fig.13 FIG. 1 is a diagram showing an example of a timing chart of the third embodiment. Fig.13 In the timing diagram 57 shown, a multi-leveled generation source RF signal (generation source power), a first bias RF signal (first bias power), and a second bias RF signal (second bias power) are supplied at different timings. The power levels of the generation source RF signal and the first bias RF signal are respectively two levels of a first power level (High) and a second power level (Low) and a zero level (third power level). In addition, the power levels of the second bias RF signal are the first power level (High) and the zero level.

[0116] In the timing diagram 57, the second bias RF signal is adjusted so that the second bias Vpp value of the second bias RF signal becomes constant with respect to levels L1 and L2. In the timing diagram 57, the bias RF signal is adjusted so that the first bias Vpp value of the first bias RF signal becomes constant with respect to levels L1 to L4 input electric power. In addition, for the first bias RF signal, the first bias RF signal may be adjusted so that the bias Vpp value becomes constant with respect to levels L1 and L2. Furthermore, the generation source RF signal may be set to CW (Continuous Wave).

[0117] In the timing diagram 57, the generated source RF signal is synchronized with the first bias RF signal and the second bias RF signal by the synchronization signal. In addition, in the timing diagram 57, there are portions where the generated source RF signal of each level overlaps with the first bias RF signal and the second bias RF signal. Therefore, in the timing diagram 57, the first bias Vpp value corresponding to the first bias RF signal has five levels, namely, levels L1 to L4 and a zero level. In addition, similarly, in the timing diagram 57, the second bias Vpp value corresponding to the second bias RF signal has three electric power levels, namely, levels L1, L2 and a zero level.

[0118] That is, the level L1 of the first bias Vpp value is a combination of the zero level of the generated source RF signal and the first electric power level of the first bias RF signal. In addition, the level L2 of the first bias Vpp value is a combination of the first electric power level of the generated source RF signal and the first electric power level of the first bias RF signal. In addition, the level L3 of the first bias Vpp value is a combination of the zero level of the generated source RF signal and the second electric power level of the first bias RF signal. In addition, the level L4 of the first bias Vpp value is a combination of the second electric power level of the generated source RF signal and the second electric power level of the first bias RF signal. In addition, the level L1 of the second bias Vpp value is a combination of the second electric power level of the generated source RF signal and the first electric power level of the second bias RF signal. In addition, the level L2 of the second bias Vpp value is a combination of the first electric power level of the generated source RF signal and the first electric power level of the second bias RF signal.

[0119] Therefore, the bias stages are stages Ph1 to Ph4 corresponding to the levels L1 to L4 of the first bias Vpp value, and stages Ph1 and Ph2 corresponding to the levels L1 and L2 of the second bias Vpp value, respectively. In addition, in stages Ph1 to Ph4 of the first bias Vpp value, the first sequence to the fourth sequence of the first bias Vpp value are obtained based on the synchronization signal (timing signal). Similarly, in stages Ph1 and Ph2 of the second bias Vpp value, the first sequence and the second sequence of the second bias Vpp value are obtained based on the synchronization signal (timing signal).

[0120] [Adjustment method of the third embodiment]

[0121] Next, use Fig.14 The adjustment method according to the third embodiment will be described. Fig.14 This is a flowchart showing an example of the adjustment process according to the third embodiment.

[0122] In the adjustment process of the third embodiment, the case where plasma processing is performed on a substrate W placed in the central area 111a of the main body 111 of the substrate support part 11 in the plasma processing apparatus 1a is described as an example, but the description of the actions of the plasma processing other than the adjustment process of the plasma control part 130 is omitted.

[0123] The setting unit 131 reads the processing plan from the storage unit 2a2, and sets the power levels of the source RF signal, the first bias RF signal, and the second bias RF signal, i.e., the first to third RF signals, for the first RF generating unit 31a, the second RF generating unit 31b, and the third RF generating unit 31e based on the processing plan (step S11). The setting unit 131 stores the set power levels of the first to third RF signals in the storage unit 2a2. Thereafter, the plasma control unit 130 controls each part of the plasma processing device 1a to start plasma processing. The plasma control unit 130 performs the processing of steps S2 and S3 following step S11.

[0124] When the representative values ​​of the bias Vpp values ​​corresponding to the second and third RF signals are input from the acquisition unit 133, the adjustment unit 134 refers to the storage unit 2a2 and acquires the set power levels of the second and third RF signals. That is, the adjustment unit 134 sets the target values ​​of the bias Vpp values ​​corresponding to the second and third RF signals in at least one stage selected from the determined multiple stages. The adjustment unit 134 adjusts the power level of the second RF signal in each stage based on the set power level of the second RF signal and the corresponding representative values ​​of the bias Vpp values ​​so that the input power becomes constant. In addition, the adjustment unit 134 adjusts the power level of the third RF signal in each stage based on the set power level of the third RF signal and the corresponding representative values ​​of the bias Vpp values ​​so that each bias Vpp value becomes the target value. That is, the adjustment unit 134 controls the second RF generator 31b to adjust the power level of the second RF signal for each stage of the second RF signal so that the input power becomes constant, and controls the third RF generator 31e to adjust the power level of the third RF signal for each stage of the third RF signal so that the input bias Vpp value becomes the target value (step S14). In addition, the adjustment unit 134 can also control the first RF generator 31a to adjust the power level of the generated source RF signal. The plasma control unit 130 performs the processing of step S5 following step S14. Thus, even when two frequencies are used as the bias RF signal, the bias power can be controlled so that the Vpp value of the desired stage becomes the target value (constant value).

[0125] (Fourth Embodiment)

[0126] In the first embodiment described above, the case of two levels of the generated source RF signal and the bias RF signal is described, but the generated source RF signal may be CW or not supplied while the bias RF signal is multi-leveled, and the embodiment in this case will be described as a fourth embodiment. In addition, the plasma processing apparatus in the fourth embodiment is the same as the first embodiment described above, and therefore the description of the repeated structure and operation will be omitted.

[0127] [Sequence chart of fourth embodiment]

[0128] Fig.15 FIG. 4 is a diagram showing an example of a timing chart of the fourth embodiment. Fig.15 In the timing diagram 58 shown, the generation source RF signal (generation source electric power) is supplied in a CW manner, and a multi-level bias RF signal (bias electric power) is supplied. The electric power level of the bias RF signal is two levels of a first electric power level (high) and a second electric power level (low) and a zero level (third electric power level). In addition, in the timing diagram 58, the bias RF signal is adjusted so that the bias Vpp value becomes constant with respect to levels L1 and L2 (Vpp is constant).

[0129] In the timing diagram 58, the synchronization signal generated by the synchronization signal generating unit 31c is used as a timing signal corresponding to one pulse period Pc of the bias RF signal. In addition, in the timing diagram 58, the bias Vpp values ​​corresponding to the bias RF signals of each level are three levels, namely, levels L1, L2 and zero level. That is, the bias RF signal becomes the first and second electric power levels (high / low) corresponding to the levels L1 and L2 of the bias Vpp value excluding the zero level. Therefore, the biased stage is the stage Ph1 and Ph2 corresponding to the levels L1 and L2, respectively. In addition, in the stages Ph1 and Ph2, the first sequence and the second sequence are obtained based on the synchronization signal (timing signal). That is, the first sequence is a plurality of bias Vpp values ​​(data groups) obtained after a delay time d1 in the stage Ph1. Similarly, the second sequence is a plurality of bias Vpp values ​​(data groups) obtained after a delay time d2 in the stage Ph2.

[0130] The adjustment unit 134 controls the second RF generation unit 31b based on the set electric power levels of the bias RF signal and the acquired first sequence and second sequence to adjust the bias RF signal so that the bias Vpp value becomes constant with respect to the levels L1 and L2. In addition, the portion where the bias Vpp value in the timing diagram 58 is zero level may be determined as a stage. In this case, the portion where the bias Vpp value is zero level becomes the third sequence. In addition, when the bias RF signal is set to more electric power levels, the stage corresponding to each electric power can be determined.

[0131] The adjustment process in the fourth embodiment is Fig.10 The difference in the first embodiment of the flowchart shown is whether the source RF signal is pulsed, so the description thereof is omitted. According to the fourth embodiment, even when the source RF signal is CW or not supplied, the bias power can be controlled so that the Vpp value of the required stage becomes a constant value.

[0132] (Variation 1 of the Fourth Embodiment)

[0133] In the fourth embodiment described above, the bias RF signal is adjusted so that the levels L1 and L2 of the bias Vpp values ​​corresponding to the phases Ph1 and Ph2 of the bias RF signal become constant, but the bias RF signal may be adjusted so that the input power of one of them becomes constant, and the embodiment in this case will be described as a modification 1 of the fourth embodiment. In addition, the plasma processing apparatus in the modification 1 of the fourth embodiment is the same as the first embodiment described above, and therefore the description of the repeated structure and operation will be omitted.

[0134] [Timing Chart of Modification 1 of Fourth Embodiment]

[0135] Fig.16 FIG. 1 is a diagram showing an example of a timing chart of Modification 1 of the fourth embodiment. Fig.16 In the timing diagram 59 shown, the generation source RF signal (generation source electric power) is supplied in a CW manner, and a multi-level bias RF signal (bias electric power) is supplied. The electric power level of the bias RF signal is two levels of a first electric power level (high) and a second electric power level (low) and a zero level (third electric power level). In addition, in the timing diagram 59, the bias RF signal is adjusted so that the bias Vpp value becomes constant with respect to level L1 (Vpp is constant). In addition, the bias RF signal is adjusted so that the bias Vpp value becomes constant with respect to level L2 input electric power (input electric power is constant).

[0136] In the timing diagram 59, the synchronization signal generated by the synchronization signal generating unit 31c is used as a timing signal corresponding to one pulse period Pc of the bias RF signal. In addition, in the timing diagram 59, the bias Vpp values ​​corresponding to the bias RF signals of each electric power level are three levels, namely, levels L1, L2 and zero level. That is, the bias RF signal becomes the first and second electric power levels (high / low) corresponding to the levels L1 and L2 of the bias Vpp value excluding the zero level. Therefore, the bias stage becomes the stages Ph1 and Ph2 corresponding to the levels L1 and L2, respectively. In addition, in the stages Ph1 and Ph2, the first sequence and the second sequence are obtained based on the synchronization signal (timing signal). That is, the first sequence is a plurality of bias Vpp values ​​(data groups) obtained after the delay time d1 in the stage Ph1. Similarly, the second sequence is a plurality of bias Vpp values ​​(data groups) obtained after the delay time d2 in the stage Ph2.

[0137] The adjustment unit 134 controls the second RF generating unit 31b based on the set power levels of the bias RF signal and the acquired first sequence to adjust the bias RF signal so that the bias Vpp value becomes constant with respect to the level L1. In addition, the adjustment unit 134 controls the second RF generating unit 31b based on the set power levels of the bias RF signal and the acquired second sequence to adjust the bias RF signal so that the input power becomes constant with respect to the level L2 among the bias Vpp values. In addition, similarly to the timing diagram 58, the portion where the bias Vpp value in the timing diagram 59 is zero level can also be determined as a stage. In this case, the portion where the bias Vpp value is zero level becomes the third sequence. In addition, when the bias RF signal is set to more power levels, the stage corresponding to each power level is determined. In this case, the bias Vpp value is constant and the input power is constant with respect to each stage, and it can be arbitrarily determined.

[0138] The adjustment process in the first modification of the fourth embodiment is the same as Fig.10 The difference between the first embodiment of the flowchart shown in the figure is whether the source RF signal is pulsed and the power level of the bias RF signal is adjusted so that the input power becomes constant in a part of the sequence, so the description thereof is omitted. According to the first modification of the fourth embodiment, even when the source RF signal is CW or not supplied, the bias power can be controlled so that the Vpp value of the required stage becomes constant or the input (input) power becomes constant.

[0139] (Variation 2 of the Fourth Embodiment)

[0140] In the fourth embodiment described above, the power level of the bias RF signal is set to two levels, namely, the first power level (high) and the second power level (low), and the zero level. However, it may also be set to the first power level (high) and the zero level. The embodiment in this case will be described as a second variation of the fourth embodiment. In addition, the plasma processing apparatus in the second variation of the fourth embodiment is the same as that in the first embodiment described above, and therefore the description of the repeated structure and operation thereof will be omitted.

[0141] Fig.17 FIG. 2 is a diagram showing an example of a timing chart of Modification 2 of the fourth embodiment. Fig.17 In the timing diagram 60 shown, the generation source RF signal (generation source electric power) is supplied in a CW manner, and the bias RF signal (bias electric power) is supplied in a pulsed manner. The electric power level of the bias RF signal is a first electric power level (high) and a zero level. In addition, in the timing diagram 60, the bias RF signal is adjusted so that the bias Vpp value becomes constant with respect to the level L1.

[0142] In the timing diagram 60, the synchronization signal generated by the synchronization signal generating unit 31c is used as a timing signal corresponding to one pulse period Pc of the bias RF signal. In addition, in the timing diagram 60, the bias Vpp value corresponding to the bias RF signal is two levels, namely, level L1 and zero level. That is, the bias RF signal becomes a first electric power level (high) corresponding to level L1 of the bias Vpp value after removing the zero level. Therefore, the bias stage becomes stage Ph1 corresponding to level L1. In addition, in stage Ph1, a first sequence is obtained based on the synchronization signal (timing signal). That is, the first sequence is a plurality of bias Vpp values ​​(data groups) obtained after a delay time d1 in stage Ph1.

[0143] The adjustment unit 134 controls the second RF generation unit 31b based on the set electric power level of the bias RF signal and the acquired first sequence to adjust the bias RF signal so that the bias Vpp value is constant with respect to the level L1. In addition, the portion where the bias Vpp value in the timing diagram 60 is zero level may also be determined as a stage, similarly to the timing diagram 58. In this case, the portion where the bias Vpp value is zero level becomes the third sequence.

[0144] The adjustment process in the second variation of the fourth embodiment is the same as Fig.10 The difference in the first embodiment of the flowchart shown is whether the source RF signal is pulsed, so the description is omitted. According to the second variation of the fourth embodiment, even when the source RF signal is CW or not supplied, the bias power can be controlled so that the Vpp value of the required stage becomes a constant value.

[0145] In addition, the point that the acquisition unit 133 can also continuously acquire the sequence at a certain interval in the first embodiment described above, and the point that the acquisition unit 133 can also acquire the sequence at a period that is 10 times or more of the pulse frequency of multiple pulse periods, can be applied to each embodiment of the second embodiment to the second modification of the fourth embodiment. Similarly, the various methods of obtaining the Vpp representative value of each stage based on the time series data of Vpp in the first embodiment described above can also be applied to each embodiment of the second embodiment to the second modification of the fourth embodiment.

[0146] In each of the above-mentioned embodiments, the sequence may be determined using a synchronization signal or using a one-dimensional cluster analysis method.

[0147] As described above, according to the first embodiment, the plasma processing apparatus 1 comprises: a chamber (plasma processing chamber 10); a substrate support portion 11, which is arranged in the chamber and includes an RF electrode; a first RF power supply (first RF generating portion 31a), which is coupled to the chamber and is configured to generate a first pulse RF signal having at least two electric power levels in each pulse period of a plurality of pulse periods; a second RF power supply (second RF generating portion 31b), which is coupled to the RF electrode and is configured to generate a second pulse RF signal having at least two electric power levels in each pulse period of a plurality of pulse periods; a Vpp detector (measuring portion 35), which is configured to detect a bias Vpp value between the second RF power supply and the RF electrode; and a control portion 2. The control unit 2 is configured to be able to perform: step a1, setting at least two electric power levels of the first pulse RF signal; step a2, setting at least two electric power levels of the second pulse RF signal; step b, determining a plurality of stages in one pulse cycle of a plurality of pulse cycles, the state of at least one of the first pulse RF signal and the second pulse RF signal in each of the plurality of stages being different from that in the adjacent stages; step c, setting a target value of bias Vpp for at least one stage selected from the plurality of stages determined in step b; step d, acquiring a representative value of bias Vpp detected by the Vpp detector in each of the plurality of stages; and step e, adjusting the electric power level of at least one of the first pulse RF signal and the second pulse RF signal in at least one selected stage based on the electric power levels set in steps a1 and a2 and the representative value of bias Vpp acquired in step d so that the representative value of bias Vpp becomes the target value. As a result, the stability of the process can be improved.

[0148] According to the first embodiment, the representative value is the average value of the plurality of bias Vpp detected by the Vpp detector during the entire period of the stage. As a result, the accuracy of the representative value of the bias Vpp can be improved.

[0149] According to the first embodiment, the representative value is the average value of a plurality of bias Vpp detected by the Vpp detector during the detection period after the delay time in the stage, thereby excluding the value of bias Vpp in a transient state. As a result, the accuracy of the representative value of bias Vpp can be improved.

[0150] In addition, according to the first embodiment, the representative value is the average value of a plurality of selected bias Vpp values ​​within the set Vpp range among a plurality of bias Vpp values ​​detected by the Vpp detector during the entire period of the stage, thereby excluding the value of the bias Vpp value in a transient state. As a result, the accuracy of the representative value of the bias Vpp can be improved.

[0151] According to the first embodiment, a plurality of bias Vpp are detected continuously at a constant interval. As a result, feedback control can be performed so that the Vpp value becomes a constant value.

[0152] According to the first embodiment, the plurality of bias Vpp values ​​are detected at a period that is 10 times or more the pulse frequency of the plurality of pulse periods. As a result, the resolution and noise removal performance of each level of the bias Vpp value can be improved.

[0153] In addition, according to the first embodiment, the plasma processing apparatus 1 further includes a synchronization signal generating unit 31c configured to generate a synchronization signal for synchronizing the first RF power supply and the second RF power supply. The steps performed by the control unit 2 include: determining the delay time and the detection period in the stage based on the synchronization signal. As a result, the bias power can be easily controlled so that the Vpp value becomes a constant value.

[0154] In addition, according to the third embodiment, the plasma processing apparatus 1a includes: a chamber (plasma processing chamber 10); a substrate support portion 11, which is arranged in the chamber and includes an RF electrode; a first RF power supply (first RF generating portion 31a), which is coupled to the chamber and is configured to generate a first pulse RF signal having at least two electric power levels in each pulse period of a plurality of pulse periods, the first pulse RF signal having a first RF frequency; a second RF power supply (second RF generating portion 31b), which is coupled to the RF electrode and is configured to generate a second pulse RF signal having at least two electric power levels in each pulse period of a plurality of pulse periods, the second pulse RF signal having a second RF frequency; a third RF power supply (third RF generating portion 31e), which is coupled to the RF electrode and is configured to generate a third pulse RF signal having at least two electric power levels in each pulse period of a plurality of pulse periods, the third pulse RF signal having a third RF frequency; a Vpp detector (measuring portion 35), which is configured to detect a bias Vpp value between the second RF power supply and the third RF power supply and the RF electrode; and a control portion 2. The control unit 2 is configured to be able to execute: step a1, setting at least two electric power levels of the first pulse RF signal; step a2, setting at least two electric power levels of the second pulse RF signal; step a3, setting at least two electric power levels of the third pulse RF signal; step b, determining a plurality of stages within one pulse cycle among a plurality of pulse cycles, wherein the state of at least one of the first pulse RF signal, the second pulse RF signal, and the third pulse RF signal in each of the plurality of stages is different from that in an adjacent stage; and step c, setting at least one of the second RF frequency and the third RF frequency in at least one stage selected from the plurality of stages determined in step b. The method comprises the following steps: step d, obtaining a representative value of the bias Vpp of at least one of the second RF frequency and the third RF frequency detected by the Vpp detector in each of the plurality of stages; and step e, adjusting the power level of at least one of the first pulsed RF signal, the second pulsed RF signal and the third pulsed RF signal of at least one selected stage based on the power level set in steps a1 to a3 and the representative value of the bias Vpp of at least one of the second RF frequency and the third RF frequency obtained in step d, so that the representative value of the bias Vpp of one of the second RF frequency and the third RF frequency becomes the target value. As a result, even when there are two types of bias RF power supplies, the stability of the process can be improved.

[0155] According to the third embodiment, the representative value is the average value of a plurality of bias Vpp values ​​of one of the second RF frequency and the third RF frequency detected by the Vpp detector during the entire period of the stage. As a result, the accuracy of the representative value of the bias Vpp value can be improved.

[0156] In addition, according to the third embodiment, the representative value is an average value of a plurality of bias Vpps of one of the second RF frequency and the third RF frequency detected by the Vpp detector during the detection period after the delay time in the stage, thereby excluding the value of the bias Vpp in the transient state. As a result, the accuracy of the representative value of the bias Vpp can be improved.

[0157] In addition, according to the third embodiment, the representative value is an average value of a plurality of selected bias Vpps within a set Vpp range among a plurality of bias Vpps of one of the second RF frequency and the third RF frequency detected by the Vpp detector during the entire period of the stage, thereby excluding the value of the bias Vpp in a transient state. As a result, the accuracy of the representative value of the bias Vpp can be improved.

[0158] In addition, according to the third embodiment, the plasma processing apparatus 1a further includes a synchronization signal generating unit 31c configured to generate a synchronization signal for synchronizing the first RF power supply, the second RF power supply, and the third RF power supply. The steps performed by the control unit 2 include: determining the delay time and the detection period in the stage based on the synchronization signal. As a result, the bias power can be easily controlled so that the Vpp value becomes a constant value.

[0159] In addition, according to the third embodiment, the second pulse RF signal is controlled so that the input electric power of the electric power level becomes constant, and the third pulse RF signal is controlled so that the bias Vpp becomes constant. As a result, for the bias RF signal, it is possible to combine the control of making the input electric power constant and the control of making the bias Vpp value constant. In addition, when the RF matching becomes unstable when the electric power level of the bias RF signal is changed, the stability of the process can be further improved by performing the control of making the input electric power constant.

[0160] In addition, according to the third embodiment, the plasma processing apparatus 1a comprises: a chamber (plasma processing chamber 10); a substrate support portion 11, which is arranged in the chamber and includes an RF electrode; a first RF power supply (first RF generating portion 31a), which is coupled to the chamber and is configured to be able to generate a first RF signal, the first RF signal having a first RF frequency; a second RF power supply (second RF generating portion 31b), which is coupled to the RF electrode and is configured to be able to generate a second pulse RF signal having at least two electric power levels in each pulse cycle of a plurality of pulse cycles, the second pulse RF signal having a second RF frequency; a Vpp detector (measuring portion 35), which is configured to be able to detect a bias Vpp value between the second RF power supply and the RF electrode; and a control portion 2. The control unit 2 is configured to be able to perform: step a1, setting the power level of the first RF signal; step a2, setting at least two power levels of the second pulsed RF signal; step b, determining a plurality of stages in one pulse cycle among a plurality of pulse cycles, the state of the second pulsed RF signal in each of the plurality of stages being different from that in an adjacent stage; step c, setting a target value of the bias Vpp of the second RF frequency in at least one stage selected from the plurality of stages determined in step b; step d, acquiring a representative value of the bias Vpp of the second RF frequency detected by the Vpp detector in each of the plurality of stages; and step e, adjusting the power level of at least one of the first RF signal and the second pulsed RF signal in at least one selected stage based on the power levels set in steps a1 and a2 and the representative value of the bias Vpp of the second RF frequency acquired in step d so that the representative value of the bias Vpp of the second RF frequency becomes the target value. As a result, the stability of the process can be improved.

[0161] In addition, according to the third embodiment, the plasma processing apparatus 1a further includes a third RF power source (third RF generating unit 31e) coupled to the RF electrode and configured to generate a third pulse RF signal having at least two power levels in each pulse period of a plurality of pulse periods. The control unit 2 is configured to be able to perform step a3 of setting at least two power levels of the third pulse RF signal. In step e, the control unit 2 adjusts the power level of at least one of the first RF signal, the second pulse RF signal of at least one selected stage, and the third pulse RF signal based on the power levels set in steps a1 to a3 and the representative value of the bias Vpp of the second RF frequency acquired in step d, so that the representative value of the bias Vpp of the second RF frequency becomes the target value. As a result, even when there are two types of bias RF power sources, the stability of the process can be improved.

[0162] According to the third embodiment, the representative value is the average value of the plurality of bias Vpps of the second RF frequency detected by the Vpp detector during the entire period of the stage. As a result, the accuracy of the representative value of the bias Vpp can be improved.

[0163] According to the third embodiment, the representative value is the average value of a plurality of bias Vpp values ​​of the second RF frequency detected by the Vpp detector during the detection period after the delay time in the stage, thereby excluding the value of the bias Vpp value in the transient state. As a result, the accuracy of the representative value of the bias Vpp can be improved.

[0164] In addition, according to the third embodiment, the representative value is an average value of a plurality of selected bias Vpps within a set Vpp range among a plurality of bias Vpps of the second RF frequency detected by the Vpp detector during the entire period of the stage, thereby excluding the value of the bias Vpp in a transient state. As a result, the accuracy of the representative value of the bias Vpp can be improved.

[0165] In addition, according to the fourth embodiment, the plasma processing device 1 includes: a chamber (plasma processing chamber 10); a substrate support part 11, which is arranged in the chamber and includes an RF electrode; an RF power supply (a second RF generating part 31b), which is coupled to the RF electrode and is configured to be able to generate a pulsed RF signal, the pulsed RF signal having a first electric power level in a first period, a second electric power level in a second period, and a third electric power level in a third period in each pulse period of a plurality of pulse periods; a Vpp detector (measuring part 35), which is configured to be able to detect a bias Vpp value between the RF power supply and the RF electrode; and a control part 2. The control unit 2 is configured to be able to perform: step a, setting a first electric power level, a second electric power level, and a third electric power level; step b, setting a target value of the bias Vpp of at least one period selected from the first period, the second period, and the third period; step c1, acquiring a first representative value of the bias Vpp detected by the Vpp detector in the first period; step c2, acquiring a second representative value of the bias Vpp detected by the Vpp detector in the second period; step c3, acquiring a third representative value of the bias Vpp detected by the Vpp detector in the third period; and step d, adjusting the electric power level of the pulsed RF signal based on the first electric power level, the second electric power level, and the third electric power level set in step a, and the first representative value, the second representative value, and the third representative value acquired in steps c1 to c3. As a result, the stability of the process can be improved.

[0166] In addition, according to the fourth embodiment, at least one of the first representative value, the second representative value, and the third representative value is an average value of a plurality of bias Vpp detected by the Vpp detector during the entire period of the corresponding period among the first period, the second period, and the third period. As a result, the accuracy of at least one of the first representative value, the second representative value, and the third representative value of the bias Vpp can be improved.

[0167] In addition, according to the fourth embodiment, at least one of the first representative value, the second representative value, and the third representative value is an average value of a plurality of bias Vpp detected by the Vpp detector during a detection period after a delay time in a corresponding period among the first period, the second period, and the third period, thereby excluding the value of the bias Vpp in a transient state. As a result, the accuracy of at least one of the first representative value, the second representative value, and the third representative value of the bias Vpp can be improved.

[0168] In addition, according to the fourth embodiment, at least one of the first representative value, the second representative value, and the third representative value is an average value of a plurality of selected bias Vpps within a set Vpp range among a plurality of bias Vpps detected by the Vpp detector during the entire period of the corresponding period among the first period, the second period, and the third period, thereby excluding the value of the bias Vpp in a transient state. As a result, the accuracy of at least one of the first representative value, the second representative value, and the third representative value of the bias Vpp can be improved.

[0169] According to the fourth embodiment, any one of the first power level, the second power level, and the third power level is a zero power level. As a result, even in a pulse cycle including a period where the power level is zero, the stability of the process can be improved.

[0170] According to the fourth embodiment, the pulse RF signal is controlled so that the bias Vpp becomes constant. As a result, the stability of the process can be improved.

[0171] According to the first modification of the fourth embodiment, the pulse RF signal is controlled so that the input electric power at the electric power level becomes constant. As a result, the electric power level can be easily controlled.

[0172] According to the second variation of the fourth embodiment, the plasma processing apparatus 1 includes: a chamber (plasma processing chamber 10); a substrate support 11 disposed in the chamber and including an RF electrode; an RF power source (second RF generating unit 31b) coupled to the RF electrode and configured to generate a pulsed RF signal having a first power level in a first period and a second power level in a second period in each of a plurality of pulse periods; a Vpp detector (measuring unit 35) configured to detect a bias Vpp value between the RF power source and the RF electrode; and a control unit 2. The control unit 2 is configured to execute: a step of setting a first power level and a second power level; a step of acquiring a first representative value of the bias Vpp detected by the Vpp detector in the first period, the first representative value being determined based on a plurality of bias Vpp detected by the Vpp detector at a period of 10 times or more of a pulse frequency of the plurality of pulse periods; and a step of adjusting the power level of the pulsed RF signal based on the first power level set in step a and the first representative value acquired in step c. As a result, process stability can be improved.

[0173] The embodiments of the present specification should be considered as illustrative in all aspects and not limiting of the present invention. The above-mentioned embodiments can be omitted, replaced, and changed in various ways without departing from the claims and the gist thereof.

[0174] In addition, in each of the above-mentioned embodiments, the case where the measuring unit 35 is provided in the conductive portion 33b connected to the substrate support portion 11 is described as an example. However, it is not limited to this. In order to measure the state of the plasma in the plasma processing chamber 10, the measuring unit 35 can be provided on an electrode arranged in the plasma processing chamber 10 or a wiring connected to the electrode. For example, the measuring unit 35 can also be provided on the conductive portion 33a connected to the antenna 14. In addition, an electrode for measurement can also be arranged in the plasma processing chamber 10, and the measuring unit 35 can be provided on the electrode or the wiring connected to the electrode. In addition, in the present embodiment, the measuring unit 35 is provided at a position of the conductive portion 33b closer to the substrate support portion 11 than the impedance matching circuit 34b. Thus, the measuring unit 35 can measure the state of the plasma in the plasma processing chamber 10.

[0175] In addition, in each of the above-mentioned embodiments, a plasma processing device 1 that uses inductively coupled plasma as a plasma source to perform etching and other processes on a substrate W is described as an example, but the technology of the present invention is not limited to this. As long as it is a device that uses plasma to process a substrate W, the plasma source is not limited to inductively coupled plasma, for example, any plasma source such as capacitively coupled plasma, microwave plasma, and magnetron plasma can be used. For example, a capacitively coupled plasma (CCP) device includes an upper electrode and a lower electrode. The lower electrode is arranged in a substrate support portion, and the upper electrode is arranged above the substrate support portion. In addition, the first matcher is coupled to the upper electrode or the lower electrode, and the second matcher is coupled to the lower electrode. Therefore, the first matcher is coupled to any one of the antenna 14 of the inductively coupled plasma processing device 1, the upper electrode of the capacitively coupled plasma device, and the lower electrode of the capacitively coupled plasma processing device 1. That is, the first matcher is coupled to the plasma processing chamber 10. Therefore, the first RF power source is coupled to the antenna 14 of the inductively coupled plasma processing apparatus 1, the upper electrode of the capacitively coupled plasma apparatus, and the lower electrode of the capacitively coupled plasma apparatus via the first matching device. That is, the first RF power source is coupled to the plasma processing chamber 10 via the first matching device.

[0176] In addition, the components of each device shown in the figure do not necessarily need to be physically configured as shown in the figure. That is, the specific method of distributing and integrating each device is not limited to the method shown in the figure, and all or part of it can be functionally or physically distributed or integrated in any unit according to various loads, usage conditions, etc.

[0177] Furthermore, all or any part of the various processing functions performed in each device may be executed on a CPU (or a microcomputer such as an MPU (Micro Processing Unit) or an MCU (Micro Controller Unit)). In addition, of course, all or any part of the various processing functions may be executed on a program parsed and executed by a CPU (or a microcomputer such as an MPU or an MCU) or on hardware based on wired logic.

[0178] In addition, the various processes described in the above embodiments can be realized by executing a program prepared in advance by a computer. Therefore, an example of a computer that executes a program having the same functions as those in the above embodiments will be described below. Fig.18 This is a diagram showing an example of a computer that executes the adjustment program.

[0179] like Fig.18As shown, the computer 200 has a CPU 201 that performs various calculations, an input device 202 that receives data input, and a monitor 203. In addition, the computer 200 has an interface device 204 for connecting to various devices and a communication device 205 for connecting to other information processing devices and the like by wire or wireless. In addition, the computer 200 has a RAM 206 and a storage device 207 that temporarily stores various information. In addition, each device 201 to 207 is connected to a bus 208.

[0180] The storage device 207 can store Figure 2 The storage device 207 can store data similar to the data stored in the storage unit 2a2, such as the processing scheme data, the power level of at least one of the generated source RF signal and the bias RF signal, etc. The input device 202 receives input of various information such as operation information from a step manager who is a user of the computer 200. The monitor 203 displays various screens such as a display screen for the step manager who is a user of the computer 200. The interface device 204 is connected to, for example, a printing device, etc. The communication device 205 has, for example, a function to communicate with the computer 200. Figure 2 The external interface 2a3 shown in the figure has the same function as that of exchanging various information with other functional units such as the measuring unit 35 and the synchronization signal generating unit 31c.

[0181] CPU 201 reads out each program stored in storage device 207, expands and executes it in RAM 206, thereby performing various processes. In addition, these programs can make computer 200 function as Figure 2 The setting unit 131 , the determining unit 132 , the acquiring unit 133 , and the adjusting unit 134 shown function.

[0182] In addition, the above-mentioned adjustment program does not necessarily need to be stored in the storage device 207. For example, the computer 200 can read and execute a program stored in a storage medium readable by the computer 200. The storage medium readable by the computer 200 corresponds to, for example, a portable recording medium such as a CD-ROM, a DVD, a USB (Universal Serial Bus) memory, a semiconductor memory such as a flash memory, a hard disk drive, etc. In addition, the parameter selection program can also be stored in advance in a device connected to a public line, the Internet, a LAN, etc., and the computer 200 reads the parameter selection program from them and executes it.

[0183] In addition, the present invention can also take the following structures.

[0184] (1) A plasma processing device comprising:

[0185] Chamber;

[0186] a substrate support disposed in the chamber and including an RF electrode;

[0187] a first matching device coupled to the chamber;

[0188] a first matching device coupled to the chamber;

[0189] a first RF power source coupled to the first matching device and configured to generate a first pulse RF signal having at least two electric power levels in each pulse period of a plurality of pulse periods;

[0190] a second matching device coupled to the RF electrode;

[0191] a second RF power source coupled to the second matching device and configured to generate a second pulse RF signal having at least two electric power levels in each pulse period of the plurality of pulse periods;

[0192] A Vpp detector configured to detect a bias Vpp value between the second matching device and the RF electrode; and

[0193] Control Department,

[0194] The control unit is configured to execute the following steps, namely:

[0195] Step a1, setting the at least two electric power levels of the first pulsed RF signal;

[0196] Step a2, setting the at least two electric power levels of the second pulsed RF signal;

[0197] Step b, determining a plurality of stages in one of the plurality of pulse periods, wherein a state of at least one of the first pulse RF signal and the second pulse RF signal in each of the plurality of stages is different from that in an adjacent stage;

[0198] Step c, setting a target value of bias Vpp for at least one stage selected from the plurality of stages determined in step b;

[0199] Step d, obtaining a representative value of the bias Vpp detected by the Vpp detector in each of the plurality of stages; and

[0200] Step e, based on the electric power levels set in steps a1 and a2 and the representative value of the bias Vpp obtained in step d, adjust the electric power level of at least one of the first pulse RF signal and the second pulse RF signal of the selected at least one stage so that the representative value of the bias Vpp becomes the target value.

[0201] (2) The plasma processing apparatus as described in (1), wherein:

[0202] The representative value is an average value of a plurality of bias Vpp detected by the Vpp detector during the entire period of the stage.

[0203] (3) The plasma processing apparatus as described in (1), wherein:

[0204] The representative value is an average value of a plurality of bias Vpp values ​​detected by the Vpp detector over a detection period after a delay time in the stage, thereby excluding a value of the bias Vpp value in a transient state.

[0205] (4) The plasma processing apparatus as described in (1), wherein:

[0206] The representative value is an average value of a plurality of selected bias Vpp values ​​within a set Vpp range among a plurality of bias Vpp values ​​detected by the Vpp detector during the entire period of the stage, thereby excluding the value of the bias Vpp value in a transient state.

[0207] (5) The plasma processing apparatus according to any one of (2) to (4), wherein:

[0208] The plurality of bias Vpp are detected successively at certain intervals.

[0209] (6) The plasma processing apparatus according to any one of (2) to (5), wherein:

[0210] The plurality of bias Vpp are detected at a period that is 10 times or more of a pulse frequency of the plurality of pulse periods.

[0211] (7) The plasma processing apparatus as described in (3), wherein:

[0212] further comprising a synchronization signal generating unit configured to generate a synchronization signal for synchronizing the first RF power source and the second RF power source,

[0213] The steps executed by the control unit include: determining the delay time and the detection period in the stage based on the synchronization signal.

[0214] (8) A plasma processing apparatus comprising:

[0215] Chamber;

[0216] a substrate support, which is disposed in the chamber and includes an RF electrode;

[0217] a first matching device coupled to the chamber;

[0218] a first RF power source coupled to the first matching device and configured to generate a first pulse RF signal having at least two electric power levels in each pulse period of a plurality of pulse periods, wherein the first pulse RF signal has a first RF frequency;

[0219] a second matching device coupled to the RF electrode;

[0220] a second RF power source coupled to the second matching device and configured to generate a second pulse RF signal having at least two electric power levels in each pulse period of the plurality of pulse periods, wherein the second pulse RF signal has a second RF frequency;

[0221] a third RF power source coupled to the second matching device and configured to generate a third pulse RF signal having at least two electric power levels in each pulse period of the plurality of pulse periods, wherein the third pulse RF signal has a third RF frequency;

[0222] A Vpp detector configured to detect a bias Vpp value between the second matching device and the RF electrode; and

[0223] Control Department,

[0224] The control unit is configured to execute the following steps, namely:

[0225] Step a1, setting the at least two electric power levels of the first pulsed RF signal;

[0226] Step a2, setting the at least two electric power levels of the second pulsed RF signal;

[0227] Step a3, setting the at least two electric power levels of the third pulsed RF signal;

[0228] Step b, determining a plurality of stages in one of the plurality of pulse periods, wherein a state of at least one of the first pulse RF signal, the second pulse RF signal and the third pulse RF signal in each of the plurality of stages is different from that in an adjacent stage;

[0229] Step c, setting a target value of bias Vpp of at least one of the second RF frequency and the third RF frequency in at least one stage selected from the plurality of stages determined in step b;

[0230] Step d, acquiring a representative value of the bias Vpp of at least one of the second RF frequency and the third RF frequency detected by the Vpp detector in each of the plurality of stages; and

[0231] Step e, based on the electric power level set in steps a1 to a3 and the representative value of the bias Vpp of at least one of the second RF frequency and the third RF frequency obtained in step d, adjust the electric power level of at least one of the first pulse RF signal, the second pulse RF signal and the third pulse RF signal of the selected at least one stage so that the representative value of the bias Vpp of one of the second RF frequency and the third RF frequency becomes the target value.

[0232] (9) The plasma processing apparatus as described in (8), wherein:

[0233] The representative value is an average value of a plurality of bias Vpps of one of the second RF frequency and the third RF frequency detected by the Vpp detector during the entire period of the phase.

[0234] (10) The plasma processing apparatus as described in (8), wherein:

[0235] The representative value is an average value of a plurality of bias Vpp of one of the second RF frequency and the third RF frequency detected by the Vpp detector throughout a detection period after a delay time in the stage, thereby excluding a value of bias Vpp in a transient state.

[0236] (11) The plasma processing apparatus as described in (8), wherein:

[0237] The representative value is an average value of a plurality of selected bias Vpps within a set Vpp range from among a plurality of bias Vpps of one of the second RF frequency and the third RF frequency detected by the Vpp detector during the entire period of the stage, thereby excluding the value of the bias Vpp in a transient state.

[0238] (12) The plasma processing apparatus according to any one of (9) to (11), wherein:

[0239] The plurality of bias Vpp are detected at a period that is 10 times or more of a pulse frequency of the plurality of pulse periods.

[0240] (13) The plasma processing apparatus as described in (10), wherein:

[0241] further comprising a synchronization signal generating unit configured to generate a synchronization signal for synchronizing the first RF power source, the second RF power source, and the third RF power source,

[0242] The steps executed by the control unit include: determining the delay time and the detection period in the stage based on the synchronization signal.

[0243] (14) The plasma processing apparatus according to any one of (8) to (13), wherein:

[0244] The second pulse RF signal is controlled so that the input electric power level becomes constant.

[0245] The third pulse RF signal is controlled so that the bias Vpp becomes constant.

[0246] (15) A plasma processing apparatus comprising:

[0247] Chamber;

[0248] a substrate support, which is disposed in the chamber and includes an RF electrode;

[0249] a first matching device coupled to the chamber;

[0250] A first RF power source is coupled to the first matching device and is configured to generate a first RF signal having a first RF frequency;

[0251] a second matching device coupled to the RF electrode;

[0252] a second RF power source coupled to the second matching device and configured to generate a second pulse RF signal having at least two electric power levels in each pulse period of the plurality of pulse periods, wherein the second pulse RF signal has a second RF frequency;

[0253] A Vpp detector configured to detect a bias Vpp value between the second matching device and the RF electrode; and

[0254] Control Department,

[0255] The control unit is configured to execute the following steps, namely:

[0256] Step a1, setting the electric power level of the first RF signal;

[0257] Step a2, setting the at least two electric power levels of the second pulsed RF signal;

[0258] Step b, determining a plurality of stages in one of the plurality of pulse periods, wherein a state of the second pulse RF signal in each of the plurality of stages is different from that in an adjacent stage;

[0259] Step c, setting a target value of the bias Vpp of the second RF frequency in at least one stage selected from the plurality of stages determined in step b;

[0260] Step d, obtaining a representative value of the bias Vpp of the second RF frequency detected by the Vpp detector in each of the plurality of stages; and

[0261] Step e, based on the electric power levels set in steps a1 and a2 and the representative value of the bias Vpp of the second RF frequency obtained in step d, adjust the electric power level of at least one of the first RF signal and the second pulse RF signal of the selected at least one stage so that the representative value of the bias Vpp of the second RF frequency becomes the target value.

[0262] (16) The plasma processing apparatus as described in (15), wherein:

[0263] further comprising a third RF power source coupled to the RF electrode and configured to generate a third pulse RF signal having at least two electric power levels in each pulse period of the plurality of pulse periods,

[0264] The control unit is configured to execute: step a3 of setting the at least two electric power levels of the third pulsed RF signal;

[0265] In the step e, the control unit adjusts the electric power level of at least one of the first RF signal, the second pulse RF signal of the at least one selected stage, and the third pulse RF signal based on the electric power level set in the steps a1 to a3 and the representative value of the bias Vpp of the second RF frequency acquired in the step d, so that the representative value of the bias Vpp of the second RF frequency becomes the target value.

[0266] (17) The plasma processing apparatus as described in (15) or (16), wherein:

[0267] The representative value is an average value of a plurality of bias Vpps of the second RF frequency detected by the Vpp detector during the entire period of the stage.

[0268] (18) The plasma processing apparatus as described in (15) or (16), wherein:

[0269] The representative value is an average value of a plurality of bias Vpps of the second RF frequency detected by the Vpp detector over a detection period after a delay time in the stage, thereby excluding a value of the bias Vpp in a transient state.

[0270] (19) The plasma processing apparatus as described in (15) or (16), wherein:

[0271] The representative value is an average value of a plurality of selected bias Vpps within a set Vpp range among a plurality of bias Vpps of the second RF frequency detected by the Vpp detector during the entire period of the stage, thereby excluding the value of the bias Vpp in a transient state.

[0272] (20) A plasma processing apparatus comprising:

[0273] Chamber;

[0274] a substrate support, which is disposed in the chamber and includes an RF electrode;

[0275] a matcher coupled to the RF electrode;

[0276] an RF power supply coupled to the matching device and configured to generate a pulsed RF signal having a first electric power level in a first period, a second electric power level in a second period, and a third electric power level in a third period in each of a plurality of pulse periods;

[0277] A Vpp detector configured to detect a bias Vpp value between the matching device and the RF electrode; and

[0278] Control Department,

[0279] The control unit is configured to execute the following steps, namely:

[0280] Step a, setting the first electric power level, the second electric power level and the third electric power level;

[0281] Step b, setting a target value of bias Vpp for at least one period selected from the first period, the second period and the third period;

[0282] Step c1, obtaining a first representative value of the bias Vpp detected by the Vpp detector during the first period;

[0283] Step c2, obtaining a second representative value of the bias Vpp detected by the Vpp detector during the second period;

[0284] Step c3, obtaining a third representative value of the bias Vpp detected by the Vpp detector during the third period; and

[0285] Step d, adjusting the electric power level of the pulsed RF signal based on the first electric power level, the second electric power level and the third electric power level set in step a, and the first representative value, the second representative value and the third representative value obtained in steps c1 to c3.

[0286] (21) The plasma processing apparatus as described in (20), wherein:

[0287] At least one of the first representative value, the second representative value, and the third representative value is an average value of a plurality of bias Vpp detected by the Vpp detector throughout a corresponding period among the first period, the second period, and the third period.

[0288] (22) A plasma processing apparatus as described in (20) or (21), wherein:

[0289] At least one of the first representative value, the second representative value and the third representative value is an average value of multiple bias Vpp detected by the Vpp detector during the detection period after a delay time in the corresponding period of the first period, the second period and the third period, thereby excluding the value of the bias Vpp in the transient state.

[0290] (23) The plasma processing apparatus according to any one of (20) to (22), wherein:

[0291] At least one of the first representative value, the second representative value and the third representative value is an average value of a plurality of selected bias Vpps within a set Vpp range from a plurality of bias Vpps detected by the Vpp detector during the entire period of the corresponding period among the first period, the second period and the third period, thereby excluding the value of the bias Vpp in a transient state.

[0292] (24) The plasma processing apparatus according to any one of (21) to (23), wherein:

[0293] The plurality of bias Vpp are detected at a period that is 10 times or more of a pulse frequency of the plurality of pulse periods.

[0294] (25) The plasma processing apparatus according to any one of (20) to (24), wherein:

[0295] Any one of the first electric power level, the second electric power level, and the third electric power level is a zero electric power level.

[0296] (26) The plasma processing apparatus as described in any one of (20) to (25), wherein:

[0297] The pulse RF signal is controlled so that the bias Vpp becomes constant.

[0298] (27) A plasma processing apparatus as described in any one of (20) to (26), wherein:

[0299] The pulse RF signal is controlled so that the input electric power level becomes constant.

[0300] (28) A plasma processing apparatus comprising:

[0301] Chamber;

[0302] a substrate support, which is disposed in the chamber and includes an RF electrode;

[0303] a matcher coupled to the RF electrode;

[0304] an RF power supply coupled to the matching device and configured to generate a pulsed RF signal having a first electric power level in a first period and a second electric power level in a second period in each of a plurality of pulse periods;

[0305] A Vpp detector configured to detect a bias Vpp value between the matching device and the RF electrode; and

[0306] Control Department,

[0307] The control unit is configured to execute the following steps, namely:

[0308] Step a, setting the first electric power level and the second electric power level;

[0309] Step b, setting a target value of bias Vpp for at least one period selected from the first period and the second period;

[0310] Step c, obtaining a first representative value of the bias Vpp detected by the Vpp detector during the first period, the first representative value being determined based on a plurality of bias Vpp detected by the Vpp detector at a period that is 10 times or more of a pulse frequency of the plurality of pulse periods; and

[0311] Step d: adjusting the electric power level of the pulse RF signal based on the first electric power level set in step a and the first representative value acquired in step c.

[0312] (29) The plasma processing apparatus as described in (28), wherein:

[0313] The first representative value is an average value of the plurality of bias Vpp detected by the Vpp detector throughout the first period.

[0314] (30) The plasma processing apparatus as described in (28), wherein:

[0315] The first representative value is an average value of the plurality of bias Vpp detected by the Vpp detector during a detection period after a delay time in the first period, thereby excluding a value of the bias Vpp in a transient state.

[0316] (31) A plasma processing apparatus as described in (28), wherein:

[0317] The first representative value is an average value of a plurality of selected bias Vpp values ​​within a set Vpp range among the plurality of bias Vpp values ​​detected by the Vpp detector throughout the first period, thereby excluding a value of the bias Vpp value in a transient state.

[0318] (32) A plasma processing apparatus as described in any one of (28) to (31), wherein:

[0319] The second electric power level is a zero electric power level.

[0320] Description of Reference Numerals

[0321] 1. 1a plasma processing device; 2 control unit

[0322] 10 plasma processing chamber; 11 substrate supporting part

[0323] 14 antenna; 31a first RF generating unit

[0324] 31b second RF generating unit; 31c synchronization signal generating unit

[0325] 31e third RF generation unit; 34a, 34b impedance matching circuit

[0326] 35 measurement unit; 130 plasma control unit

[0327] 131 setting unit; 132 decision unit

[0328] 133 Acquisition Department; 134 Adjustment Department

[0329] W substrate.

Claims

1. A plasma processing device, characterized in that: have: Chamber; a substrate support disposed in the chamber and including an RF electrode; a first RF power source coupled to the chamber and configured to generate a first pulsed RF signal having at least two electrical power levels in each of a plurality of pulse periods; a second RF power source coupled to the RF electrode and configured to generate a second pulsed RF signal having at least two electrical power levels in each of the plurality of pulse periods; a Vpp detector configured to detect a bias Vpp value between the second RF power source and the RF electrode; and Control Department, The control unit is configured to execute: Step a1, setting the at least two electric power levels of the first pulsed RF signal; Step a2, setting the at least two electric power levels of the second pulsed RF signal; Step b, determining a plurality of stages in one of the plurality of pulse periods, wherein a state of at least one of the first pulse RF signal and the second pulse RF signal in each of the plurality of stages is different from that in an adjacent stage; Step c, setting a target value of bias Vpp for at least one stage selected from the plurality of stages determined in step b; Step d, obtaining a representative value of the bias Vpp detected by the Vpp detector in each of the plurality of stages; and Step e, based on the electric power levels set in step a1 and step a2 and the representative value of the bias Vpp obtained in step d, adjust the electric power level of at least one of the first pulse RF signal and the second pulse RF signal of the at least one selected stage so that the representative value of the bias Vpp becomes the target value.

2. The plasma processing device according to claim 1, characterized in that: The representative value is an average value of a plurality of bias Vpp detected by the Vpp detector during the entire period of the stage.

3. The plasma processing apparatus according to claim 1, wherein: The representative value is an average value of a plurality of bias Vpp detected by the Vpp detector during a detection period after a delay time in the stage, thereby excluding a value of the bias Vpp in a transient state.

4. The plasma processing apparatus according to claim 1, wherein: The representative value is an average value of a plurality of selected bias Vpp values ​​within a set Vpp range among a plurality of bias Vpp values ​​detected by the Vpp detector during the entire period of the stage, thereby excluding the value of the bias Vpp value in a transient state.

5. The plasma processing apparatus according to any one of claims 2 to 4, characterized in that: The plurality of bias Vpp are detected successively at certain intervals.

6. The plasma processing apparatus according to claim 2, wherein: The plurality of bias Vpp are detected at a period that is 10 times or more of a pulse frequency of the plurality of pulse periods.

7. The plasma processing apparatus according to claim 3, wherein: further comprising a synchronization signal generating unit configured to generate a synchronization signal for synchronizing the first RF power source and the second RF power source, The steps executed by the control unit include: determining the delay time and the detection period in the stage based on the synchronization signal.

8. A plasma processing device, characterized in that: have: Chamber; a substrate support disposed in the chamber and including an RF electrode; a first RF power source coupled to the chamber and configured to generate a first pulsed RF signal having at least two electrical power levels in each of a plurality of pulse periods, the first pulsed RF signal having a first RF frequency; a second RF power source coupled to the RF electrode and configured to generate a second pulsed RF signal having at least two power levels in each of the plurality of pulse periods, the second pulsed RF signal having a second RF frequency; a third RF power source coupled to the RF electrode and configured to generate a third pulsed RF signal having at least two power levels in each of the plurality of pulse periods, the third pulsed RF signal having a third RF frequency; a Vpp detector configured to detect a bias Vpp value between the second RF power source and the third RF power source and the RF electrode; and Control Department, The control unit is configured to execute: Step a1, setting the at least two electric power levels of the first pulsed RF signal; Step a2, setting the at least two electric power levels of the second pulsed RF signal; Step a3, setting the at least two electric power levels of the third pulsed RF signal; Step b, determining a plurality of stages in one of the plurality of pulse periods, wherein a state of at least one of the first pulse RF signal, the second pulse RF signal and the third pulse RF signal in each of the plurality of stages is different from that in an adjacent stage; Step c, setting a target value of bias Vpp of at least one of the second RF frequency and the third RF frequency in at least one stage selected from the plurality of stages determined in step b; Step d, obtaining a representative value of the bias Vpp of at least one of the second RF frequency and the third RF frequency detected by the Vpp detector in each of the plurality of stages; and Step e, based on the electric power level set in steps a1 to a3 and the representative value of the bias Vpp of at least one of the second RF frequency and the third RF frequency obtained in step d, adjust the electric power level of at least one of the first pulse RF signal, the second pulse RF signal and the third pulse RF signal of the selected at least one stage so that the representative value of the bias Vpp of one of the second RF frequency and the third RF frequency becomes the target value.

9. The plasma processing apparatus according to claim 8, wherein: The representative value is an average value of a plurality of bias Vpps of one of the second RF frequency and the third RF frequency detected by the Vpp detector during the entire period of the phase.

10. The plasma processing apparatus according to claim 8, wherein: The representative value is an average value of a plurality of bias Vpp of one of the second RF frequency and the third RF frequency detected by the Vpp detector during a detection period after a delay time in the stage, thereby excluding a value of bias Vpp in a transient state.

11. The plasma processing apparatus according to claim 8, wherein: The representative value is an average value of a plurality of selected bias Vpps within a set Vpp range among a plurality of bias Vpps of one of the second RF frequency and the third RF frequency detected by the Vpp detector during the entire period of the stage, thereby excluding the value of the bias Vpp in a transient state.

12. The plasma processing apparatus according to any one of claims 9 to 11, characterized in that: The plurality of bias Vpp are detected at a period that is 10 times or more of a pulse frequency of the plurality of pulse periods.

13. The plasma processing apparatus according to claim 10, wherein: further comprising a synchronization signal generating unit configured to generate a synchronization signal for synchronizing the first RF power source, the second RF power source, and the third RF power source, The steps executed by the control unit include: determining the delay time and the detection period in the stage based on the synchronization signal.

14. The plasma processing apparatus according to claim 8, wherein: The second pulse RF signal is controlled so that the input electric power at the electric power level becomes constant. The third pulse RF signal is controlled so that the bias Vpp becomes constant.

15. A plasma processing device, characterized in that: have: Chamber; a substrate support disposed in the chamber and including an RF electrode; a first RF power source coupled to the chamber and configured to generate a first RF signal having a first RF frequency; a second RF power source coupled to the RF electrode and configured to generate a second pulsed RF signal having at least two power levels in each of a plurality of pulse periods, the second pulsed RF signal having a second RF frequency; A Vpp detector configured to detect a bias Vpp value between the second RF power source and the RF electrode; and Control Department, The control unit is configured to execute: Step a1, setting the electric power level of the first RF signal; Step a2, setting the at least two electric power levels of the second pulsed RF signal; Step b, determining a plurality of stages in one of the plurality of pulse periods, wherein a state of the second pulse RF signal in each of the plurality of stages is different from that in an adjacent stage; Step c, setting a target value of the bias Vpp of the second RF frequency in at least one stage selected from the plurality of stages determined in step b; Step d, obtaining a representative value of the bias Vpp of the second RF frequency detected by the Vpp detector in each of the plurality of stages; and Step e, based on the electric power levels set in step a1 and step a2 and the representative value of the bias Vpp of the second RF frequency obtained in step d, adjust the electric power level of at least one of the first RF signal and the second pulse RF signal of the selected at least one stage so that the representative value of the bias Vpp of the second RF frequency becomes the target value.

16. The plasma processing apparatus according to claim 15, wherein: further comprising a third RF power source coupled to the RF electrode and configured to generate a third pulse RF signal having at least two electric power levels in each pulse period of the plurality of pulse periods, The control unit is configured to execute: step a3 of setting the at least two electric power levels of the third pulsed RF signal; In the step e, the control unit adjusts the electric power level of at least one of the first RF signal, the second pulse RF signal of the selected at least one stage, and the third pulse RF signal based on the electric power level set in the steps a1 to a3 and the representative value of the bias Vpp of the second RF frequency acquired in the step d, so that the representative value of the bias Vpp of the second RF frequency becomes the target value.

17. The plasma processing device according to claim 15 or 16, characterized in that: The representative value is an average value of a plurality of bias Vpps of the second RF frequency detected by the Vpp detector during the entire period of the stage.

18. The plasma processing device according to claim 15 or 16, characterized in that: The representative value is an average value of a plurality of bias Vpps of the second RF frequency detected by the Vpp detector during a detection period after a delay time in the stage, thereby excluding a value of the bias Vpp in a transient state.

19. The plasma processing apparatus according to claim 15 or 16, characterized in that: The representative value is an average value of a plurality of selected bias Vpps within a set Vpp range among a plurality of bias Vpps of the second RF frequency detected by the Vpp detector during the entire period of the stage, thereby excluding the value of the bias Vpp in a transient state.

20. A plasma processing device, characterized in that: have: Chamber; a substrate support disposed in the chamber and including an RF electrode; an RF power supply coupled to the RF electrode and configured to generate a pulsed RF signal having a first power level in a first period, a second power level in a second period, and a third power level in a third period in each of a plurality of pulse periods; a Vpp detector configured to detect a bias Vpp value between the RF power source and the RF electrode; and Control Department, The control unit is configured to execute: Step a, setting the first electric power level, the second electric power level and the third electric power level; Step b, setting a target value of the bias Vpp for at least one period selected from the first period, the second period and the third period; Step c1, obtaining a first representative value of the bias Vpp detected by the Vpp detector during the first period; Step c2, obtaining a second representative value of the bias Vpp detected by the Vpp detector during the second period; Step c3, obtaining a third representative value of the bias Vpp detected by the Vpp detector during the third period; and Step d, adjusting the power level of the pulsed RF signal based on the first power level, the second power level and the third power level set in step a and the first representative value, the second representative value and the third representative value acquired in steps c1 to c3.

21. The plasma processing apparatus according to claim 20, wherein: At least one of the first representative value, the second representative value, and the third representative value is an average value of a plurality of bias Vpp detected by the Vpp detector throughout a corresponding period among the first period, the second period, and the third period.

22. The plasma processing apparatus according to claim 20, wherein: At least one of the first representative value, the second representative value and the third representative value is an average value of multiple bias Vpp detected by the Vpp detector during the detection period after a delay time in the corresponding period of the first period, the second period and the third period, thereby excluding the value of the bias Vpp in the transient state.

23. The plasma processing apparatus according to claim 20, wherein: At least one of the first representative value, the second representative value and the third representative value is an average value of a plurality of selected bias Vpps within a set Vpp range among a plurality of bias Vpps detected by the Vpp detector during the entire period of the corresponding period among the first period, the second period and the third period, thereby excluding the value of the bias Vpp in a transient state.

24. The plasma processing apparatus according to any one of claims 21 to 23, characterized in that: The plurality of bias Vpp are detected at a period that is 10 times or more of a pulse frequency of the plurality of pulse periods.

25. The plasma processing apparatus according to claim 24, wherein: Any one of the first electric power level, the second electric power level, and the third electric power level is a zero electric power level.

26. The plasma processing apparatus according to claim 20, wherein: The pulse RF signal is controlled so that the bias Vpp becomes constant.

27. The plasma processing apparatus according to claim 20, wherein: The pulse RF signal is controlled so that the input electric power at the electric power level becomes constant.

28. A plasma processing device, characterized in that: have: Chamber; a substrate support disposed in the chamber and including an RF electrode; an RF power supply coupled to the RF electrode and configured to generate a pulsed RF signal having a first electric power level in a first period and a second electric power level in a second period in each of a plurality of pulse periods; a Vpp detector configured to detect a bias Vpp value between the RF power source and the RF electrode; and Control Department, The control unit is configured to execute: Step a, setting the first electric power level and the second electric power level; Step c, obtaining a first representative value of the bias Vpp detected by the Vpp detector during the first period, wherein the first representative value is determined based on a plurality of bias Vpp detected by the Vpp detector at a period that is 10 times or more of a pulse frequency of the plurality of pulse periods; and Step d: adjusting the electric power level of the pulse RF signal based on the first electric power level set in step a and the first representative value acquired in step c.

29. The plasma processing apparatus according to claim 28, wherein: The first representative value is an average value of the plurality of bias Vpp detected by the Vpp detector throughout the first period.

30. The plasma processing apparatus according to claim 28, wherein: The first representative value is an average value of the plurality of bias Vpp detected by the Vpp detector during a detection period after a delay time in the first period, thereby excluding a value of the bias Vpp in a transient state.

31. The plasma processing apparatus according to claim 28, wherein: The first representative value is an average value of a plurality of selected bias Vpp values ​​within a set Vpp range among the plurality of bias Vpp values ​​detected by the Vpp detector throughout the first period, thereby excluding a transient bias Vpp value.

32. The plasma processing apparatus according to any one of claims 28 to 31, characterized in that: The second electric power level is a zero electric power level.

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