Reaction chamber and semiconductor device using same

Abstract

The invention discloses a reaction chamber and a semiconductor device using the same, the reaction chamber comprises a chamber body, a driving unit, a heating disc, a spray head and a UV light source, the heating disc and the spray head are both arranged in the chamber body, the driving unit is connected with the heating disc and used for driving the heating disc to rotate, the spray head is arranged above the heating disc, and the UV light source is arranged above the heating disc. And the UV light source is arranged above the spraying head. The driving unit is added, and the driving unit is connected with the heating disc and used for driving the heating disc to rotate. Namely, under the action of the driving unit, the heating disc can rotate, and a film is formed in the rotating process, so that the problem that gas on the surface of a wafer is difficult to uniformly distribute due to non-uniform temperature field and flow field in the reaction chamber can be solved, the film forming quality is improved, and the problem that a conventional reaction chamber cannot continuously rotate by 360 degrees during curing due to the fact that a lamp box cannot continuously rotate by 360 degrees is solved. And the thickness of the cured film is not uniform.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and in particular to a reaction chamber and a semiconductor device using the same. Background Art

[0002] In the prior art, in semiconductor process equipment such as CVD equipment, for thin film products for trench filling, it is necessary to solidify the deposited thin film. While heating the thin film in the chamber, UV irradiation or the like is used to solidify the thin film at multiple angles for a long time.

[0003] In the chamber of semiconductor process equipment, a fixed bottom heating plate and a rotating light box are usually used to achieve curing. However, due to the size of the light box, it cannot be rotated 360 degrees continuously, resulting in uneven thickness of the cured film. Summary of the invention

[0004] The embodiments of the present invention provide a reaction chamber and a semiconductor device using the same, which solve the technical problem of uneven thickness of a cured film caused by the inability of a light box to rotate 360 ​​degrees continuously during curing in a traditional reaction chamber.

[0005] In order to solve the above-mentioned problem, according to one aspect of the present application, an embodiment of the present invention provides a reaction chamber, wherein the reaction chamber comprises a chamber body, a driving unit, a heating disk, a spray head and a UV light source, wherein the heating disk and the spray head are both arranged in the chamber body, the driving unit is connected to the heating disk for driving the heating disk to rotate, the spray head is arranged above the heating disk, and the UV light source is arranged above the spray head.

[0006] In some embodiments, the reaction chamber further includes an ozone oxidation unit, which is disposed outside the chamber body and has an output end capable of extending to a shower head in the chamber body to oxidize the thin film on the heating plate through a shower hole on the shower head.

[0007] In some embodiments, the ozone oxidation unit includes an air box and a connecting pipe, wherein the air box is located outside the chamber body, one end of the connecting pipe is connected to the air box, and the other end of the connecting pipe extends to the spray head.

[0008] In some embodiments, the shower head is made of a light-transmitting material.

[0009] In some embodiments, the reaction chamber further includes a quartz window disposed between the UV light source and the shower head.

[0010] In some embodiments, the UV light source is disposed outside the chamber body, and the upper end surface of the chamber body is the quartz window; or, the UV light source is disposed inside the chamber body, and the quartz window is located inside the chamber body.

[0011] In some embodiments, the driving unit includes a motor, a belt and a gear, one end of the belt is sleeved on the output shaft of the motor, and the other end of the belt is sleeved on the gear; the gear is connected to the heating plate.

[0012] In some embodiments, the heating plate includes a heating plate body, a support tube and a bearing portion, the support tube is connected below the heating plate body, and the bearing portion extends from the bottom surface of the support tube to the upper surface of the heating plate body; the support tube is connected to the driving unit.

[0013] In some embodiments, a heat exchange medium can be placed in the bearing portion to control the temperature of the support tube.

[0014] According to another aspect of the present application, an embodiment of the present invention provides a semiconductor device, wherein the semiconductor device includes the above-mentioned reaction chamber.

[0015] Compared with the prior art, the reaction chamber of the present invention has at least the following beneficial effects:

[0016] The reaction chamber provided by the present invention comprises a chamber body, a driving unit, a heating disk, a spray head and a UV light source, wherein the heating disk and the spray head are both arranged in the chamber body, the driving unit is connected to the heating disk for driving the heating disk to rotate, the spray head is arranged above the heating disk, and the UV light source is arranged above the spray head.

[0017] The chamber body is used in thin film deposition technology, and the ideal deposition temperature is quickly reached through the heating mechanism, thereby improving production efficiency. The heating plate is used to provide uniform heating to improve the quality and adhesion of the film. The shower head is used to evenly introduce process gas into the chamber body, thereby improving the uniformity and quality of thin film deposition. The UV light source plays a key role in the thin film curing process, and UV curing is achieved through the UV light source. More importantly, the present invention adds a driving unit, which is connected to the heating plate to drive the heating plate to rotate. In other words, under the action of the driving unit, the heating plate can rotate, and the film is formed during the rotation. The UV light source irradiates light on the thin film of the heating plate, which can improve the problem of difficult uniform distribution of gas on the wafer surface caused by uneven temperature field and flow field in the reaction chamber, thereby improving the film quality and solving the technical problem of uneven thickness of the cured film caused by the inability of the light box to rotate 360 ​​degrees continuously during curing in the traditional reaction chamber.

[0018] The semiconductor device provided by the present invention is designed based on the above-mentioned reaction chamber. Its beneficial effects refer to the beneficial effects of the above-mentioned reaction chamber, which will not be described in detail here.

[0019] The above description is only an overview of the technical solution of the present invention. In order to more clearly understand the technical means of the present invention and implement it according to the contents of the specification, the following is a detailed description of the preferred embodiments of the present invention in conjunction with the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the accompanying drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are some embodiments of the present invention. For ordinary technicians in this field, other accompanying drawings can be obtained based on these accompanying drawings without paying any creative work.

[0021] Figure 1 is a schematic structural diagram of a reaction chamber provided by an embodiment of the present invention;

[0022] Figure 2 is another structural schematic diagram of a reaction chamber provided by an embodiment of the present invention;

[0023] Reference numerals:

[0024] 1. Chamber body; 2. Drive unit; 21. Motor; 22. Belt; 23. Gear; 3. Heating plate; 31. Heating plate body; 32. Support tube; 33. Bearing part; 4. Sprinkler head; 5. UV light source; 6. Ozone oxidation unit; 61. Gas box; 62. Connecting pipe; 7. Quartz window. DETAILED DESCRIPTION

[0025] In order to further explain the technical means and effects adopted by the present invention to achieve the predetermined invention purpose, the specific implementation methods, structures, features and effects of the present invention application are described in detail below in conjunction with the accompanying drawings and preferred embodiments. In the following description, different "one embodiment" or "embodiment" does not necessarily refer to the same embodiment. In addition, specific features, structures, or characteristics in one or more embodiments may be combined in any suitable form.

[0026] In the description of the present invention, it should be clarified that the terms "first", "second", etc. in the specification and claims of the present invention and the above-mentioned drawings are used to distinguish similar objects, but are not necessarily used to describe a specific order or sequence; the terms "vertical", "lateral", "longitudinal", "front", "rear", "left", "right", "up", "down", "horizontal", etc. indicating directions or positional relationships are based on the directions or positional relationships shown in the drawings, and are only for the convenience of describing the present invention, and do not mean that the referred device or element must have a specific direction or position, and therefore cannot be understood as a limitation on the present invention.

[0027] In the description of the present invention, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0028] The preparation process of the film for trench filling usually involves multiple steps, including material selection, deposition, and curing. In semiconductor manufacturing, commonly used trench filling methods include chemical vapor deposition (CVD) and physical vapor deposition (PVD) technology. Specifically: Material selection and deposition: Use reactants such as ethyl orthosilicate and ozone to deposit SiO2 film on the surface of the silicon wafer through APCVD or SACVD process to achieve good conformality and filling ability. For deep trenches, CVD process can be used to achieve good filling of deep trenches by adjusting the film formation sputtering ratio. Multilayer film structure: In order to reduce the problem of film cracking caused by thermal stress during high-temperature annealing, a multilayer film structure can be used, such as a double-layer or multi-layer SiO2 film structure combined with a PECVD process. Curing treatment: In some cases, such as when using NOA81 nano-groove film, ultraviolet (UV) exposure is required for semi-curing and full curing to ensure the stability and mechanical properties of the material. Subsequent processing: After the film deposition and curing, chemical mechanical polishing (CMP) or dry etching process is usually required to flatten the surface and remove excess material. These steps together ensure the effective application of trench fill film in semiconductor manufacturing, providing the required mechanical strength and corrosion resistance.

[0029] Among them, the curing process of the film is crucial to improving its performance and application. Curing can significantly improve the thermal stability and corrosion resistance of the film. In order to achieve curing, a heating plate fixed at the bottom and a rotating light box are usually used to achieve curing. However, due to the size of the light box, it cannot be rotated 360 degrees continuously, resulting in uneven thickness of the cured film.

[0030] This embodiment achieves 360-degree irradiation by changing the rotating object, thereby avoiding the phenomenon of uneven film thickness.

[0031] In order to better understand the above technical solution, the above technical solution will be described in detail below in conjunction with the accompanying drawings and specific implementation methods.

[0032] Example 1

[0033] This embodiment provides a reaction chamber such as Figure 1 and Figure 2 As shown, the reaction chamber includes a chamber body 1, a driving unit 2, a heating disk 3, a spray head 4 and a UV light source 5. The heating disk 3 and the spray head 4 are both arranged in the chamber body 1. The driving unit 2 is connected to the heating disk 3 for driving the heating disk 3 to rotate. The spray head 4 is arranged above the heating disk 3, and the UV light source 5 is arranged above the spray head 4.

[0034] Specifically, the chamber body 1 is used in thin film deposition technology, and the ideal deposition temperature is quickly reached through the heating mechanism, thereby improving production efficiency. The chamber body 1 in this embodiment is a hollow structure, and its specific shape depends on the heating plate 3 and the shower head 4. For example, the chamber body 1 includes a first rectangle at the top and a second rectangle at the bottom, the first rectangle and the second rectangle are connected internally, the first rectangle is larger in size to accommodate the heating plate 3 and the shower head 4, and the second rectangle is smaller in size to accommodate the support cylinder below the heating plate 3.

[0035] The heating plate 3 is a key component in the thin film deposition process, used to provide uniform heating to improve the quality and adhesion of the thin film.

[0036] The shower head 4 is used to uniformly introduce the process gas into the chamber body 1, so as to improve the uniformity and quality of thin film deposition. For example, in vacuum coating technology, the design and use of the shower head 4 can ensure the uniform distribution of gas in the chamber body 1 and solve the influence of gas concentration difference on the thickness of thin film deposition. In addition, the coordinated design of the shower head 4 and the uniform flow plate can improve the gas flow state and enhance the quality and production efficiency of thin film deposition.

[0037] The UV light source 5 plays a key role in the film curing process. In this embodiment, UV curing is achieved through the UV light source 5. UV curing is a process of using ultraviolet rays to irradiate chemical substances so that the photoinitiator therein absorbs photons of a specific wavelength, thereby initiating the polymerization of monomers to produce gluing and hardening. In the UV curing process, the photoinitiator absorbs UV photons and is excited to an excited state, releasing active free radicals or ions. These active species react with the double bonds in the unsaturated monomers to initiate polymerization or cross-linking reactions, so that the coating or glue is quickly cured into a solid. UV curing not only has the characteristics of rapid curing, but also can reduce energy waste, avoid air pollution caused by solvent volatilization, and improve production efficiency.

[0038] More importantly, the present embodiment adds a driving unit 2, which is connected to the heating disk 3 for driving the heating disk 3 to rotate. That is to say, under the action of the driving unit 2, the heating disk 3 can rotate, and film is formed during the rotation. At the same time, the UV light source 5 irradiates light on the thin film of the heating disk 3, which can improve the problem of difficult uniform distribution of gas on the wafer surface caused by uneven temperature field and flow field in the reaction chamber, thereby improving the film formation quality.

[0039] In a specific embodiment, the reaction chamber also includes an ozone oxidation unit 6, which is arranged outside the chamber body 1, and its output end can extend to the spray head 4 in the chamber body 1 to oxidize the thin film on the heating plate 3 through the spray hole on the spray head 4.

[0040] Chemical vapor deposition (CVD) is a technique for forming a solid film on a substrate surface through a chemical reaction. In the CVD process, a gas precursor is usually used in combination with an oxygen or ozone mixture as an oxidant to form an oxide film. This technique can produce a film with high uniformity and low viscosity, which is suitable for insulating layers and protective layers in semiconductor manufacturing. In this embodiment, UV oxidation and ozone oxidation are carried out simultaneously, and the UV light source 5 also has a catalytic effect, which can accelerate the ozone oxidation rate.

[0041] In a specific embodiment, the ozone oxidation unit 6 includes an air box 61 and a connecting pipe 62, wherein the air box 61 is located outside the chamber body 1, one end of the connecting pipe 62 is connected to the air box 61, and the other end of the connecting pipe 62 extends to the spray head 4. Specifically, ozone is stored in the air box 61, and in a specific use process, the ozone in the air box 61 is transported to the spray head 4 through the connecting pipe 62, and then the film on the heating plate 3 is oxidized through the spray holes on the spray head 4.

[0042] In a specific embodiment, the shower head 4 is made of a light-transmitting material. Among them, the light-transmitting material is preferably quartz. Quartz has good light transmittance, and it exhibits excellent transmission performance in the ultraviolet, visible light and infrared spectrum ranges. In the visible light region, the transmittance of quartz is as high as more than 90%, and even in some high-purity quartz glass, it can reach more than 93%. The shower head 4 in this embodiment is made of quartz material, so that the ultraviolet light emitted by the UV light source 5 can be irradiated on the film of the heating disk 3 through the shower head 4, thereby achieving curing.

[0043] In a specific embodiment, the reaction chamber further includes a quartz window 7 , and the quartz window 7 is disposed between the UV light source 5 and the shower head 4 .

[0044] In this embodiment, there are two different ways to dispose the UV light source 5, and correspondingly, the disposition positions of the quartz window 7 are also different.

[0045] The first one, such as Figure 2 As shown, the UV light source 5 is arranged outside the chamber body 1, and the upper end surface of the chamber body 1 is the quartz window 7;

[0046] In this embodiment, the UV light source 5 is arranged outside the chamber body 1. At this time, the quartz window 7 is opened on the upper end surface of the chamber body 1. On the one hand, the light emitted by the UV light source 5 is focused after passing through the quartz window 7, and then irradiated on the film of the heating plate 3 through the shower head 4, which has a better effect; on the other hand, the connection between the quartz window 7 and the chamber body 1 is provided with a seal. This arrangement enables the reaction in the chamber body 1 to be carried out in a safe environment.

[0047] The second type, such as Figure 1 As shown, the UV light source 5 is disposed in the chamber body 1 , and the quartz window 7 is located in the chamber body 1 . In this embodiment, the UV light source 5 is disposed in the chamber body 1 .

[0048] In a specific embodiment, the driving unit 2 includes a motor 21, a belt 22 and a gear 23, one end of the belt 22 is sleeved on the output shaft of the motor 21, and the other end of the belt 22 is sleeved on the gear 23; the gear 23 is connected to the heating plate 3.

[0049] Specifically, in this embodiment, the motor 21 is started, and it can drive the gear 23 to rotate through the belt 22, and then drive the heating plate 3 to rotate through the gear. During the rotation process, the light emitted by the UV light source 5 can be evenly irradiated on the film of the heating plate 3, thereby improving the problem of difficult uniform distribution of gas on the wafer surface caused by uneven temperature field and flow field in the reaction chamber, thereby improving the film formation quality.

[0050] In a specific embodiment, the heating plate 3 includes a heating plate body 31, a support tube 32 and a bearing part 33, wherein the support tube 32 is connected to the bottom of the heating plate body 31, and the bearing part 33 extends from the bottom surface of the support tube 32 to the upper surface of the heating plate body 31; the support tube 32 is connected to the driving unit 2. A heat exchange medium can be placed in the bearing part 33 to control the temperature of the support tube 32. More specifically, by injecting hot water into the bearing part 33 to control the temperature of the bearing part 33, the bearing part can be kept at a suitable process temperature, and the temperature of the bearing part is uniform, which is conducive to improving the deposition quality.

[0051] After the reaction chamber provided in this embodiment is used, in the specific working process, the chamber is first equipped with an environment, providing a suitable temperature and pressure for curing, and introducing gas. Then, ozone oxidation is introduced through the ozone oxidation unit 6. Finally, the heating plate 3 is turned on during the ultraviolet radiation process through the UV light source 5, and the heating plate 3 is rotated by the driving unit 2, and finally, the gas is evacuated by the vacuum device arranged outside the bearing part 33 to return to the initial state.

[0052] The reaction chamber provided in this embodiment avoids the loss caused by the rotation of a large-volume light box, and the heating plate can achieve 360-degree continuous rotation. During the curing process of the film, it can improve the problem of uniform distribution of gas on the wafer surface caused by uneven temperature field and flow field in the reaction chamber, and at the same time, the wafer is uniformly irradiated, thereby improving the film quality.

[0053] Example 2

[0054] This embodiment provides a semiconductor device, wherein the semiconductor device includes the reaction chamber described in Embodiment 1.

[0055] The above is only a specific embodiment of the present invention, but the protection scope of the present invention is not limited thereto. Any technician familiar with the technical field can easily think of various equivalent modifications or replacements within the technical scope disclosed by the present invention, and these modifications or replacements should be included in the protection scope of the present invention. Therefore, the protection scope of the present invention shall be based on the protection scope of the claims.

Claims

1. A reaction chamber, characterized in that: The reaction chamber includes a chamber body, a driving unit, a heating disk, a spray head and a UV light source. The heating disk and the spray head are both arranged in the chamber body. The driving unit is connected to the heating disk to drive the heating disk to rotate. The spray head is arranged above the heating disk, and the UV light source is arranged above the spray head.

2. The reaction chamber according to claim 1, characterized in that: The reaction chamber further comprises an ozone oxidation unit, which is arranged outside the chamber body and whose output end can extend to the shower head in the chamber body so as to oxidize the film on the heating plate through the shower holes on the shower head.

3. The reaction chamber according to claim 2, characterized in that: The ozone oxidation unit comprises an air box and a connecting pipe, wherein the air box is located outside the chamber body, one end of the connecting pipe is connected to the air box, and the other end of the connecting pipe extends to the spray head.

4. The reaction chamber according to claim 1, characterized in that: The spray head is made of light-transmitting material.

5. The reaction chamber according to claim 1, characterized in that: The reaction chamber further includes a quartz window, and the quartz window is disposed between the UV light source and the shower head.

6. The reaction chamber according to claim 5, characterized in that: The UV light source is arranged outside the chamber body, and the upper end surface of the chamber body is the quartz window; or, the UV light source is arranged inside the chamber body, and the quartz window is located inside the chamber body.

7. The reaction chamber according to claim 1, characterized in that: The driving unit comprises a motor, a belt and a gear, one end of the belt is sleeved on the output shaft of the motor, and the other end of the belt is sleeved on the gear; the gear is connected to the heating plate.

8. The reaction chamber according to any one of claims 1 to 7, characterized in that: The heating plate comprises a heating plate body, a support tube and a bearing part. The support tube is connected below the heating plate body. The bearing part extends from the bottom surface of the support tube to the upper surface of the heating plate body. The support tube is connected to the driving unit.

9. The reaction chamber according to claim 8, characterized in that: A heat exchange medium can be placed in the bearing portion to control the temperature of the support tube.

10. A semiconductor device, characterized in that: The semiconductor device comprises the reaction chamber according to any one of claims 1 to 9.

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