Magnetic field parameter determination method and device, computer equipment and storage medium

Abstract

The invention relates to the technical field of magnetic sensors, in particular to a magnetic field parameter determination method and device, computer equipment and a storage medium. The method comprises the following steps: acquiring a three-axis magnetic field first parameter acquired by a three-axis magnetic field sensor based on a first magnetic sensitive film set and a three-axis magnetic field second parameter acquired by the three-axis magnetic field sensor based on a second magnetic sensitive film set; wherein the first magnetic sensitive film set comprises two groups of first magnetic sensitive films; the second magnetic sensitive film set comprises two groups of second magnetic sensitive films; the second magnetic sensitive films and the first magnetic sensitive films are in an orthogonal relationship; and performing parameter inverse solution on the three-axis magnetic field first parameter and the three-axis magnetic field second parameter to obtain a magnetic field parameter of the three-axis magnetic field. The in-plane magnetic field and the out-of-plane magnetic field are measured at the same time through the unified magnetic sensitive thin film material with high-quality crystal orientation and magnetic performance, the problem of temperature coefficient difference between different materials is avoided, and it is guaranteed that magnetic field parameters of the three-axis magnetic field are accurately determined.

Description

Technical Field

[0001] The present application relates to the field of magnetic sensor technology, and in particular to a method, device, computer equipment and storage medium for determining magnetic field parameters. Background Art

[0002] With the continuous development of magnetic field measurement technology, three-axis magnetic field sensors have been widely used in geomagnetic navigation, non-destructive testing, power equipment monitoring and other fields.

[0003] Existing three-axis magnetic field sensors usually rely on different types of magnetically sensitive materials to measure in-plane magnetic fields and out-of-plane magnetic fields respectively. Due to the different physical properties and temperature coefficients of the materials, this design makes it difficult for the sensor to maintain consistent response characteristics during temperature changes or long-term operation, thus affecting the accurate determination of the magnetic field parameters of the three-axis magnetic field. Summary of the invention

[0004] Based on this, it is necessary to provide a magnetic field parameter determination method, device, computer equipment and storage medium that can ensure accurate determination of magnetic field parameters of a three-axis magnetic field in response to the above technical problems.

[0005] In a first aspect, the present application provides a method for determining magnetic field parameters. The method comprises:

[0006] Acquire a first parameter of a three-axis magnetic field obtained by a three-axis magnetic field sensor based on a first magnetic sensitive film set, and a second parameter of a three-axis magnetic field obtained based on a second magnetic sensitive film set; wherein the first magnetic sensitive film set includes two groups of first magnetic sensitive films; the second magnetic sensitive film set includes two groups of second magnetic sensitive films; each of the second magnetic sensitive films is orthogonal to each of the first magnetic sensitive films;

[0007] The first parameter of the three-axis magnetic field and the second parameter of the three-axis magnetic field are inversely solved to obtain the magnetic field parameters of the three-axis magnetic field.

[0008] In one embodiment, the method of obtaining a first parameter of a three-axis magnetic field obtained by the three-axis magnetic field sensor based on a first magnetic sensitive film set and a second parameter of a three-axis magnetic field obtained based on a second magnetic sensitive film set includes:

[0009] Performing a patterned magnetic sensitivity test on the first magnetic sensitive film set to obtain the first parameter of the three-axis magnetic field;

[0010] Performing a patterned magnetic sensitivity test on the second magnetic sensitive film set to obtain the second parameter of the three-axis magnetic field;

[0011] The first parameters of the three-axis magnetic field are parameters for the X-axis magnetic field and the Z-axis magnetic field; and the second parameters of the three-axis magnetic field are parameters for the Y-axis magnetic field and the Z-axis magnetic field.

[0012] In one embodiment, two groups of first magnetically sensitive films in the first magnetically sensitive film set have opposite first bevel angles; and two groups of second magnetically sensitive films in the second magnetically sensitive film set have opposite second bevel angles.

[0013] In one embodiment, each of the second magnetically sensitive films is orthogonal to each of the first magnetically sensitive films.

[0014] In one embodiment, the first magnetically sensitive film and the second magnetically sensitive film are made of a triaxial magnetically sensitive material.

[0015] In one embodiment, the preparation process of the first magnetic sensitive film and the second magnetic sensitive film includes:

[0016] On a single crystal substrate, a molecular beam epitaxy method or a pulsed laser deposition technique is used to deposit a magnetically sensitive thin film on a triaxial magnetically sensitive material to obtain the first magnetically sensitive thin film and the second magnetically sensitive thin film.

[0017] In a second aspect, the present application also provides a magnetic field parameter determination device. The device comprises:

[0018] An acquisition module, used to acquire a first parameter of a three-axis magnetic field acquired by the three-axis magnetic field sensor based on a first magnetic sensitive film set, and a second parameter of a three-axis magnetic field acquired based on a second magnetic sensitive film set; wherein the first magnetic sensitive film set includes two groups of first magnetic sensitive films; and the second magnetic sensitive film set includes two groups of second magnetic sensitive films;

[0019] The analytical module is used to perform parameter inverse analysis on the first parameter of the three-axis magnetic field and the second parameter of the three-axis magnetic field to obtain the magnetic field parameters of the three-axis magnetic field.

[0020] In a third aspect, the present application further provides a computer device. The computer device includes a memory and a processor, the memory stores a computer program, and the processor implements the following steps when executing the computer program:

[0021] Acquire a first parameter of a three-axis magnetic field obtained by the three-axis magnetic field sensor based on a first magnetic sensitive film set, and a second parameter of a three-axis magnetic field obtained based on a second magnetic sensitive film set; wherein the first magnetic sensitive film set includes two groups of first magnetic sensitive films; and the second magnetic sensitive film set includes two groups of second magnetic sensitive films;

[0022] The first parameter of the three-axis magnetic field and the second parameter of the three-axis magnetic field are inversely solved to obtain the magnetic field parameters of the three-axis magnetic field.

[0023] In a fourth aspect, the present application further provides a computer-readable storage medium. The computer-readable storage medium stores a computer program, and when the computer program is executed by a processor, the following steps are implemented:

[0024] Acquire a first parameter of a three-axis magnetic field obtained by the three-axis magnetic field sensor based on a first magnetic sensitive film set, and a second parameter of a three-axis magnetic field obtained based on a second magnetic sensitive film set; wherein the first magnetic sensitive film set includes two groups of first magnetic sensitive films; and the second magnetic sensitive film set includes two groups of second magnetic sensitive films;

[0025] The first parameter of the three-axis magnetic field and the second parameter of the three-axis magnetic field are inversely solved to obtain the magnetic field parameters of the three-axis magnetic field.

[0026] In a fifth aspect, the present application further provides a computer program product. The computer program product includes a computer program, and when the computer program is executed by a processor, the following steps are implemented:

[0027] Acquire a first parameter of a three-axis magnetic field obtained by a three-axis magnetic field sensor based on a first magnetic sensitive film set, and a second parameter of a three-axis magnetic field obtained based on a second magnetic sensitive film set; wherein the first magnetic sensitive film set includes two groups of first magnetic sensitive films; the second magnetic sensitive film set includes two groups of second magnetic sensitive films; each of the second magnetic sensitive films is orthogonal to each of the first magnetic sensitive films;

[0028] The first parameter of the three-axis magnetic field and the second parameter of the three-axis magnetic field are inversely solved to obtain the magnetic field parameters of the three-axis magnetic field.

[0029] The above-mentioned magnetic field parameter determination method, device, computer equipment and storage medium obtain the first three-axis magnetic field parameter obtained by the three-axis magnetic field sensor based on the first magnetic sensitive film set and the second three-axis magnetic field parameter obtained based on the second magnetic sensitive film set, so as to realize parameter acquisition for the magnetic field when using an agreed single magnetic sensitive film, avoiding the influence of the temperature coefficient difference between different materials on the measurement accuracy, and by performing parameter inverse solution on the first three-axis magnetic field parameter and the second three-axis magnetic field parameter, the magnetic field parameters of the three-axis magnetic field can be obtained, without the need for complex structural design and operation difficulty, reducing the manufacturing cost and time cost of obtaining the magnetic field parameters. Compared with the traditional three-axis sensor, the present application does not require a complex preparation process to achieve effective acquisition of magnetic field parameters, and since no complex sensor calibration operation is required, the efficiency of obtaining magnetic field parameters is further improved. Through a unified magnetic sensitive film material with high-quality crystal orientation and magnetic properties, the simultaneous measurement of the in-plane magnetic field and the out-of-plane magnetic field is realized, avoiding the problem of temperature coefficient difference between different materials, and ensuring the accurate determination of the magnetic field parameters of the three-axis magnetic field. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] Figure 1 An application environment diagram of a method for determining magnetic field parameters provided in an embodiment of the present application;

[0031] Figure 2 A schematic diagram of a flow chart of a first method for determining magnetic field parameters provided in an embodiment of the present application;

[0032] Figure 3 A schematic diagram of a flow chart of a second method for determining magnetic field parameters provided in an embodiment of the present application;

[0033] Figure 4 A schematic diagram of the structure of a first three-axis magnetic field sensor provided in an embodiment of the present application;

[0034] Figure 5 A schematic diagram of the structure of a second three-axis magnetic field sensor provided in an embodiment of the present application;

[0035] Figure 6 A structural block diagram of a magnetic field parameter determination device provided in an embodiment of the present application;

[0036] Figure 7 FIG. 4 is a diagram showing the internal structure of a computer device in one embodiment. DETAILED DESCRIPTION

[0037] In order to make the purpose, technical solution and advantages of the present application more clearly understood, the present application is further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present application and are not used to limit the present application.

[0038] The magnetic field parameter determination method provided in the embodiment of the present application can be applied to Figure 1 In the application environment shown. Among them, the terminal 102 communicates with the server 104 through the network. The data storage system can store the data that the server 104 needs to process. The data storage system can be integrated on the server 104, or it can be placed on the cloud or other network servers. Obtain the first parameter of the three-axis magnetic field obtained by the three-axis magnetic field sensor based on the first magnetic sensitive film set, and the second parameter of the three-axis magnetic field obtained based on the second magnetic sensitive film set; perform parameter inversion on the first parameter of the three-axis magnetic field and the second parameter of the three-axis magnetic field to obtain the magnetic field parameters of the three-axis magnetic field. Among them, the terminal 102 can be but is not limited to various personal computers, laptops, smart phones, tablets, Internet of Things devices and portable wearable devices. The Internet of Things devices can be smart speakers, smart TVs, smart air conditioners, smart car-mounted devices, etc. Portable wearable devices can be smart watches, smart bracelets, head-mounted devices, etc. The server 104 can be implemented with an independent server or a server cluster consisting of multiple servers.

[0039] In one embodiment, Figure 2 As shown, a method for determining magnetic field parameters is provided, and the method is applied to Figure 1 Taking the server 104 in the example as an example, the following steps are included:

[0040] S201 : Acquire a first parameter of a three-axis magnetic field acquired by a three-axis magnetic field sensor based on a first magnetic sensitive film set, and a second parameter of a three-axis magnetic field acquired based on a second magnetic sensitive film set.

[0041] The first magnetically sensitive film set includes two groups of first magnetically sensitive films; the second magnetically sensitive film set includes two groups of second magnetically sensitive films; and each second magnetically sensitive film is orthogonal to each first magnetically sensitive film.

[0042] Furthermore, the second magnetically sensitive film and the first magnetically sensitive film can be the same magnetically sensitive film, that is, the second magnetically sensitive film can be obtained by rotating or tilting the first magnetically sensitive film; the structure and position of the second magnetically sensitive film and the first magnetically sensitive film are not limited here.

[0043] It should be noted that the first magnetic sensitive film and the second magnetic sensitive film are made of a triaxial magnetic sensitive material. The triaxial magnetic sensitive material has strong in-plane magnetic anisotropy and good perpendicular anomalous Hall effect response; specifically, the triaxial magnetic sensitive material is a magnetic film material with an in-plane easy magnetization axis and an out-of-plane perpendicular magnetization intensity that can be stretched.

[0044] Among them, the three-axis magnetic sensitive material meets the following conditions: (1) It has strong in-plane magnetic anisotropy, forming an in-plane easy magnetization axis, which is suitable for planar Hall effect and magnetoresistance effect; (2) The in-plane magnetoresistance changes significantly with the parallel magnetic field, while the change in magnetoresistance under the perpendicular magnetic field is negligible, ensuring that the in-plane magnetic field sensing is sensitive and the perpendicular magnetic field measurement is independent.

[0045] In one embodiment of the present application, the triaxial magnetic sensitive material may be a doped perovskite oxide La1−xSrxMnO3 (LSMO) with an out-of-plane crystal orientation, where "X" ranges from [0.2-0.5], for adjusting the magnetoresistance and linearity.

[0046] Further explanation, the preparation process of the first magnetic sensitive film and the second magnetic sensitive film includes: on a single crystal substrate, using a molecular beam epitaxy method or a pulsed laser deposition technology to deposit magnetic sensitive films on a triaxial magnetic sensitive material to obtain the first magnetic sensitive film and the second magnetic sensitive film.

[0047] The thickness of the first magnetic sensitive film and the second magnetic sensitive film needs to be controlled to be 10-50 nanometers to ensure the sensitivity of the in-plane magnetoresistance effect and the linear response in the vertical direction.

[0048] In one embodiment of the present application, the single crystal substrate is oriented SrTiO3 or LaAlO3, and the thin film material is La1-xSrxMnO3 (LSMO). By optimizing the annealing process, the thin film crystal is oriented to a plane, forming a stable in-plane easy magnetization axis.

[0049] S202, performing parameter inverse solution on the first parameter of the three-axis magnetic field and the second parameter of the three-axis magnetic field to obtain the magnetic field parameters of the three-axis magnetic field.

[0050] It should be noted that the output voltage relationship of the three-axis magnetic field sensor is as follows:

[0051] U12=Ub+Uh; U13=-Ub+Uh;

[0052] Among them, U12 and U13 are the potential differences between electrodes 1 to 2 and 3 respectively, Uh is the anomalous Hall voltage caused by the perpendicular magnetic field, and Ub is the unequal potential difference caused by the in-plane magnetoresistance effect. The inverse solution is Ub=(U12-U13) / 2, Uh=(U12+U13) / 2; in the absence of a bevel angle, Ub is proportional to the magnitude of the in-plane uniaxial magnetic field, that is, Ub=k1|Bx|, and Uh is proportional to the magnitude of the out-of-plane uniaxial magnetic field, Uh=k2Bz. The sign depends on the direction.

[0053] Further explanation: the first parameter of the three-axis magnetic field is a parameter for the X-axis magnetic field and the Z-axis magnetic field; the second parameter of the three-axis magnetic field is a parameter for the Y-axis magnetic field and the Z-axis magnetic field. In addition, the two groups of first magnetic sensitive films in the first magnetic sensitive film set have opposite first bevel angles; the two groups of second magnetic sensitive films in the second magnetic sensitive film set have opposite second bevel angles.

[0054] Therefore, due to the bevel angle of the magnetic sensitive film, the measured Ub also includes the influence component of the partial out-of-plane uniaxial magnetic field, that is: Ub=k11|Bx|+k12Bz.

[0055] The outputs of two groups of first magnetically sensitive films with opposite first bevel angles in the first magnetically sensitive film set are respectively Ub1=k11|Bx|+k12Bz and Ub2=k11|Bx|-k12Bz;

[0056] Among them, the signs of Ub1-Ub2 are the same as the signs of Bx, so the inverse solution of the X-axis magnetic field parameters and the Z-axis magnetic field parameters can be realized. Furthermore, in order to ensure that the magnetic field parameters of the three-axis magnetic field can be obtained smoothly, two groups of second magnetic sensitive films with opposite second bevel angles included in the second magnetic sensitive film set are required to realize the inverse solution of the Y-axis magnetic field parameters.

[0057] Specifically, the first parameter of the three-axis magnetic field is used to obtain the solution of the X-axis magnetic field parameter and the Z-axis magnetic field parameter; the second parameter of the three-axis magnetic field is used to obtain the solution of the Y-axis magnetic field parameter and the Z-axis magnetic field parameter. By fusing the Z-axis magnetic field parameter results output by the two sets of thin films, the components of the X-axis magnetic field parameter and the Y-axis magnetic field parameter are obtained respectively through differential calculation, the measurement of the three-axis magnetic field is completed, and the magnetic field parameters of the three-axis magnetic field are obtained.

[0058] The above-mentioned method for determining magnetic field parameters obtains the first parameter of the three-axis magnetic field obtained by the three-axis magnetic field sensor based on the first magnetic sensitive film set, and the second parameter of the three-axis magnetic field obtained based on the second magnetic sensitive film set, so as to realize parameter acquisition for the magnetic field when using an agreed single magnetic sensitive film, avoiding the influence of the temperature coefficient difference between different materials on the measurement accuracy, and by performing parameter inverse solution on the first parameter of the three-axis magnetic field and the second parameter of the three-axis magnetic field, the magnetic field parameters of the three-axis magnetic field can be obtained, without the need for complex structural design and operation difficulty, reducing the manufacturing cost and time cost of obtaining the magnetic field parameters. Compared with traditional three-axis sensors, the present application does not require a complex preparation process to achieve effective acquisition of magnetic field parameters, and since no complex sensor calibration operation is required, the efficiency of obtaining magnetic field parameters is further improved. Through a unified magnetic sensitive film material with high-quality crystal orientation and magnetic properties, the simultaneous measurement of the in-plane magnetic field and the out-of-plane magnetic field is realized, avoiding the problem of temperature coefficient difference between different materials, and ensuring the accurate determination of the magnetic field parameters of the three-axis magnetic field.

[0059] In one embodiment, if Figure 3 As shown, when it is necessary to obtain the first parameter of the three-axis magnetic field obtained by the three-axis magnetic field sensor based on the first magnetic sensitive film set, and the second parameter of the three-axis magnetic field obtained based on the second magnetic sensitive film set.

[0060] S301, performing patterned magnetic sensitivity detection on a first magnetic sensitive film set to obtain a first parameter of a three-axis magnetic field.

[0061] The first parameters of the three-axis magnetic field are parameters for the X-axis magnetic field and the Z-axis magnetic field.

[0062] S302, performing patterned magnetic sensitivity detection on the second magnetic sensitive film set to obtain a second parameter of the three-axis magnetic field.

[0063] The second parameters of the three-axis magnetic field are parameters for the Y-axis magnetic field and the Z-axis magnetic field.

[0064] It should be noted that the first magnetically sensitive film set and the second magnetically sensitive film set include a substrate layer, a corresponding magnetically sensitive material and a patterned structure; wherein the substrate layer is used to grow a magnetically sensitive material layer; the corresponding magnetically sensitive material is used to sense the magnetic field and generate an in-plane magnetoresistance effect and an out-of-plane anomalous Hall effect signal; the patterned structure includes a long electrode and detection claw structures at both ends, and the two groups of patterned structures are orthogonal to each other, each realizing 180° in-plane magnetic sensitivity detection.

[0065] Further explanation: the graphic structure includes: a long strip design and a detection electrode claw; the long strip design is used to control the current to flow through the two ends of the long strip to form a uniform in-plane current; a group of electrodes are arranged on both sides of the short end of the film, and the detection electrode claws include a single detection claw (electrode 1) and a double detection claw (electrode 2 and electrode 3); the single detection claw and the double detection claw are respectively arranged on both sides of the electrode. In addition, the single detection claw is located in the center of the long strip, and the double detection claws are located on both sides of the center and are equidistant from the center.

[0066] In one embodiment of the present application, the first magnetic sensitive film set and the second magnetic sensitive film set have the same graphic electrode design, namely: (1) long strip electrodes: used to generate uniform in-plane current; (2) double detection claws and single detection claw design: used to sense voltage signals generated by planar Hall effect and anomalous Hall effect; (3) the double detection claws and single detection claws are arranged in the two sets of films at 90° respectively to ensure orthogonal measurement of in-plane and out-of-plane magnetic fields.

[0067] The above-mentioned method for determining magnetic field parameters provides a data basis for the subsequent determination of the magnetic field parameters of the three-axis magnetic field by obtaining the first parameter of the three-axis magnetic field obtained by the three-axis magnetic field sensor based on the first magnetic sensitive film set, and the second parameter of the three-axis magnetic field obtained based on the second magnetic sensitive film set. It also avoids the problem of temperature coefficient differences between different materials and ensures the accurate determination of the magnetic field parameters of the three-axis magnetic field.

[0068] In one embodiment, two groups of first magnetically sensitive films in the first magnetically sensitive film set have opposite first bevel angles; and two groups of second magnetically sensitive films in the second magnetically sensitive film set have opposite second bevel angles.

[0069] In one embodiment of the present application, the bevel angles of the first magnetic sensitive film set and the second magnetic sensitive film set of the sensor are ±θ, respectively, where θ ranges from [5°-15°] to ensure that the influence of the perpendicular magnetic field component on the in-plane magnetoresistance effect achieves optimal resolution.

[0070] It is further explained that the bevel angle is achieved by adjusting the substrate inclination angle during film preparation. The specific steps include: adjusting the inclination angle of the single crystal substrate during the film deposition process; using molecular beam epitaxy (MBE) or pulsed laser deposition (PLD) technology to form a magnetically sensitive film with a tilt angle; and optimizing the annealing treatment of the film to ensure the stability of the crystal orientation and magnetic anisotropy.

[0071] In one embodiment, the electrode design adopts a patterned long strip structure, such as Figure 4 As shown, it includes at least four patterned areas 101, 102, 103 and 104, and a signal processing module 105; wherein 101 and 102 have the same pattern and opposite bevel angles; 103 and 104 have the same pattern and opposite bevel angles; a single detection claw 106 (electrode 1) and double detection claws 107, 108 (electrode 2 and electrode 3) are arranged at both ends of the strip. The single detection claw 106 is located in the center of the strip, and the double detection claws 107, 108 are symmetrically distributed on both sides with equal spacing.

[0072] The first magnetic sensitive film set and the second magnetic sensitive film set have opposite tilt angles for distinguishing the in-plane and out-of-plane magnetic field components. The left side views of the first magnetic sensitive film set and the second magnetic sensitive film set can be as shown in FIG. Figure 5 As shown, the two have opposite inclination angles. 109 is a growth substrate, and 110 is a magnetically sensitive thin film material.

[0073] The above-mentioned method for determining magnetic field parameters can realize three-axis magnetic field measurement through simple tilt and rotation design without complicated multiple graphic designs; and the preparation process does not require complicated multi-layer heterogeneous structures and delicate multi-step processing, which reduces manufacturing costs and improves yield rate.

[0074] It should be understood that, although the steps in the flowcharts involved in the above embodiments are displayed in sequence according to the indication of the arrows, these steps are not necessarily executed in sequence according to the order indicated by the arrows. Unless there is a clear explanation in this article, the execution of these steps is not strictly limited in order, and these steps can be executed in other orders. Moreover, at least a part of the steps in the flowcharts involved in the above embodiments may include multiple steps or multiple stages, and these steps or stages are not necessarily executed at the same time, but can be executed at different times, and the execution order of these steps or stages is not necessarily carried out in sequence, but can be executed in turn or alternately with other steps or at least a part of the steps or stages in other steps.

[0075] Based on the same inventive concept, the embodiment of the present application also provides a magnetic field parameter determination device for implementing the magnetic field parameter determination method involved above. The implementation scheme for solving the problem provided by the device is similar to the implementation scheme recorded in the above method, so the specific limitations in one or more magnetic field parameter determination device embodiments provided below can refer to the limitations of the magnetic field parameter determination method above, and will not be repeated here.

[0076] In one embodiment, Figure 6 As shown, a device for determining magnetic field parameters is provided, comprising: an acquisition module 10 and an analysis module 20, wherein:

[0077] The acquisition module 10 is used to obtain a first parameter of a three-axis magnetic field obtained by a three-axis magnetic field sensor based on a first magnetic sensitive film set, and a second parameter of a three-axis magnetic field obtained based on a second magnetic sensitive film set; wherein the first magnetic sensitive film set includes two groups of first magnetic sensitive films; the second magnetic sensitive film set includes two groups of second magnetic sensitive films; and each second magnetic sensitive film is orthogonal to each first magnetic sensitive film.

[0078] The analysis module 20 is used to perform parameter inverse analysis on the first parameter of the three-axis magnetic field and the second parameter of the three-axis magnetic field to obtain the magnetic field parameters of the three-axis magnetic field.

[0079] In one embodiment, a patterned magnetic sensitivity test is performed on the first magnetic sensitive film set to obtain a first parameter of a three-axis magnetic field;

[0080] Performing a patterned magnetic sensitivity test on the second magnetic sensitive film set to obtain a second parameter of the three-axis magnetic field;

[0081] The first parameter of the three-axis magnetic field is a parameter for the X-axis magnetic field and the Z-axis magnetic field; the second parameter of the three-axis magnetic field is a parameter for the Y-axis magnetic field and the Z-axis magnetic field.

[0082] In one embodiment, two groups of first magnetically sensitive films in the first magnetically sensitive film set have opposite first bevel angles; and two groups of second magnetically sensitive films in the second magnetically sensitive film set have opposite second bevel angles.

[0083] In one embodiment, each second magnetically sensitive film is orthogonal to each first magnetically sensitive film.

[0084] In one embodiment, the first magnetically sensitive film and the second magnetically sensitive film are made of a triaxial magnetically sensitive material.

[0085] In one embodiment, the preparation process of the first magnetic sensitive film and the second magnetic sensitive film includes:

[0086] On a single crystal substrate, a molecular beam epitaxy method or a pulse laser deposition technique is used to deposit a magnetically sensitive film on a triaxial magnetically sensitive material to obtain a first magnetically sensitive film and a second magnetically sensitive film.

[0087] The above-mentioned magnetic field parameter determination device obtains the first parameter of the three-axis magnetic field obtained by the three-axis magnetic field sensor based on the first magnetic sensitive film set, and the second parameter of the three-axis magnetic field obtained based on the second magnetic sensitive film set, so as to realize parameter acquisition for the magnetic field when using an agreed single magnetic sensitive film, thereby avoiding the influence of the temperature coefficient difference between different materials on the measurement accuracy. Moreover, by performing parameter inverse solution on the first parameter of the three-axis magnetic field and the second parameter of the three-axis magnetic field, the magnetic field parameters of the three-axis magnetic field can be obtained. There is no need for complex structural design and operation difficulty, which reduces the manufacturing cost and time cost of obtaining the magnetic field parameters. Compared with the traditional three-axis sensor, the present application does not require a complex preparation process to effectively obtain the magnetic field parameters. Moreover, since there is no need for complex sensor calibration operations, the efficiency of obtaining the magnetic field parameters is further improved. Through a unified magnetic sensitive film material with high-quality crystal orientation and magnetic properties, the simultaneous measurement of the in-plane magnetic field and the out-of-plane magnetic field is realized, thereby avoiding the problem of temperature coefficient difference between different materials, and ensuring the accurate determination of the magnetic field parameters of the three-axis magnetic field.

[0088] Each module in the above-mentioned magnetic field parameter determination device can be implemented in whole or in part by software, hardware and a combination thereof. Each of the above-mentioned modules can be embedded in or independent of a processor in a computer device in the form of hardware, or can be stored in a memory in a computer device in the form of software, so that the processor can call and execute operations corresponding to each of the above modules.

[0089] In one embodiment, a computer device is provided. The computer device may be a terminal, and its internal structure diagram may be as follows: Figure 7As shown. The computer device includes a processor, a memory, an input / output interface, a communication interface, a display unit and an input device. The processor, the memory and the input / output interface are connected through a system bus, and the communication interface, the display unit and the input device are connected to the system bus through the input / output interface. The processor of the computer device is used to provide computing and control capabilities. The memory of the computer device includes a non-volatile storage medium and an internal memory. The non-volatile storage medium stores an operating system and a computer program. The internal memory provides an environment for the operation of the operating system and the computer program in the non-volatile storage medium. The input / output interface of the computer device is used to exchange information between the processor and the external device. The communication interface of the computer device is used to communicate with an external terminal in a wired or wireless manner, and the wireless manner can be realized through WIFI, a mobile cellular network, NFC (near field communication) or other technologies. When the computer program is executed by the processor, a method for determining magnetic field parameters is implemented. The display unit of the computer device is used to form a visually visible picture, which can be a display screen, a projection device or a virtual reality imaging device. The display screen can be a liquid crystal display screen or an electronic ink display screen, and the input device of the computer device can be a touch layer covering the display screen, or a button, trackball or touchpad set on the computer device shell, or an external keyboard, touchpad or mouse.

[0090] Those skilled in the art will understand that Figure 7 The structure shown in the figure is only a block diagram of a part of the structure related to the solution of the present application, and does not constitute a limitation on the computer device to which the solution of the present application is applied. The specific computer device may include more or fewer components than those shown in the figure, or combine certain components, or have a different arrangement of components.

[0091] In one embodiment, a computer device is provided, including a memory and a processor, wherein a computer program is stored in the memory, and when the processor executes the computer program, the following steps are implemented:

[0092] Acquire a first parameter of a three-axis magnetic field obtained by the three-axis magnetic field sensor based on a first magnetic sensitive film set, and a second parameter of a three-axis magnetic field obtained based on a second magnetic sensitive film set; wherein the first magnetic sensitive film set includes two groups of first magnetic sensitive films; and the second magnetic sensitive film set includes two groups of second magnetic sensitive films;

[0093] The first parameter of the three-axis magnetic field and the second parameter of the three-axis magnetic field are inversely solved to obtain the magnetic field parameters of the three-axis magnetic field.

[0094] In one embodiment, when the processor executes the computer program, the processor further implements the following steps:

[0095] Performing a patterned magnetic sensitivity test on the first magnetic sensitive film set to obtain a first parameter of a three-axis magnetic field;

[0096] Performing a patterned magnetic sensitivity test on the second magnetic sensitive film set to obtain a second parameter of the three-axis magnetic field;

[0097] The first parameter of the three-axis magnetic field is a parameter for the X-axis magnetic field and the Z-axis magnetic field; the second parameter of the three-axis magnetic field is a parameter for the Y-axis magnetic field and the Z-axis magnetic field.

[0098] In one embodiment, when the processor executes the computer program, the processor further implements the following steps:

[0099] The two groups of first magnetically sensitive films in the first magnetically sensitive film set have opposite first bevel angles; the two groups of second magnetically sensitive films in the second magnetically sensitive film set have opposite second bevel angles.

[0100] In one embodiment, when the processor executes the computer program, the processor further implements the following steps:

[0101] The second magnetically sensitive films are orthogonal to each other and the first magnetically sensitive films are orthogonal to each other.

[0102] In one embodiment, when the processor executes the computer program, the processor further implements the following steps:

[0103] The first magnetic sensitive film and the second magnetic sensitive film are made of triaxial magnetic sensitive material.

[0104] In one embodiment, when the processor executes the computer program, the processor further implements the following steps:

[0105] The preparation process of the first magnetic sensitive film and the second magnetic sensitive film includes:

[0106] On a single crystal substrate, a molecular beam epitaxy method or a pulse laser deposition technique is used to deposit a magnetically sensitive film on a triaxial magnetically sensitive material to obtain a first magnetically sensitive film and a second magnetically sensitive film.

[0107] In one embodiment, a computer readable storage medium is provided, on which a computer program is stored, and when the computer program is executed by a processor, the following steps are implemented:

[0108] Acquire a first parameter of a three-axis magnetic field obtained by the three-axis magnetic field sensor based on a first magnetic sensitive film set, and a second parameter of a three-axis magnetic field obtained based on a second magnetic sensitive film set; wherein the first magnetic sensitive film set includes two groups of first magnetic sensitive films; and the second magnetic sensitive film set includes two groups of second magnetic sensitive films;

[0109] The first parameter of the three-axis magnetic field and the second parameter of the three-axis magnetic field are inversely solved to obtain the magnetic field parameters of the three-axis magnetic field.

[0110] In one embodiment, when the computer program is executed by a processor, the following steps are also implemented:

[0111] Performing a patterned magnetic sensitivity test on the first magnetic sensitive film set to obtain a first parameter of a three-axis magnetic field;

[0112] Performing a patterned magnetic sensitivity test on the second magnetic sensitive film set to obtain a second parameter of the three-axis magnetic field;

[0113] The first parameter of the three-axis magnetic field is a parameter for the X-axis magnetic field and the Z-axis magnetic field; the second parameter of the three-axis magnetic field is a parameter for the Y-axis magnetic field and the Z-axis magnetic field.

[0114] In one embodiment, when the computer program is executed by a processor, the following steps are also implemented:

[0115] The two groups of first magnetically sensitive films in the first magnetically sensitive film set have opposite first bevel angles; the two groups of second magnetically sensitive films in the second magnetically sensitive film set have opposite second bevel angles.

[0116] In one embodiment, when the computer program is executed by a processor, the following steps are also implemented:

[0117] The second magnetically sensitive films are orthogonal to each other and the first magnetically sensitive films are orthogonal to each other.

[0118] In one embodiment, when the computer program is executed by a processor, the following steps are also implemented:

[0119] The first magnetic sensitive film and the second magnetic sensitive film are made of triaxial magnetic sensitive material.

[0120] In one embodiment, when the computer program is executed by a processor, the following steps are also implemented:

[0121] The preparation process of the first magnetic sensitive film and the second magnetic sensitive film includes:

[0122] On a single crystal substrate, a molecular beam epitaxy method or a pulse laser deposition technique is used to deposit a magnetically sensitive film on a triaxial magnetically sensitive material to obtain a first magnetically sensitive film and a second magnetically sensitive film.

[0123] In one embodiment, a computer program product is provided, comprising a computer program, which, when executed by a processor, implements the following steps:

[0124] Acquire a first parameter of a three-axis magnetic field obtained by the three-axis magnetic field sensor based on a first magnetic sensitive film set, and a second parameter of a three-axis magnetic field obtained based on a second magnetic sensitive film set; wherein the first magnetic sensitive film set includes two groups of first magnetic sensitive films; and the second magnetic sensitive film set includes two groups of second magnetic sensitive films;

[0125] The first parameter of the three-axis magnetic field and the second parameter of the three-axis magnetic field are inversely solved to obtain the magnetic field parameters of the three-axis magnetic field.

[0126] In one embodiment, when the computer program is executed by a processor, the following steps are also implemented:

[0127] Performing a patterned magnetic sensitivity test on the first magnetic sensitive film set to obtain a first parameter of a three-axis magnetic field;

[0128] Performing a patterned magnetic sensitivity test on the second magnetic sensitive film set to obtain a second parameter of the three-axis magnetic field;

[0129] The first parameter of the three-axis magnetic field is a parameter for the X-axis magnetic field and the Z-axis magnetic field; the second parameter of the three-axis magnetic field is a parameter for the Y-axis magnetic field and the Z-axis magnetic field.

[0130] In one embodiment, when the computer program is executed by a processor, the following steps are also implemented:

[0131] The two groups of first magnetically sensitive films in the first magnetically sensitive film set have opposite first bevel angles; the two groups of second magnetically sensitive films in the second magnetically sensitive film set have opposite second bevel angles.

[0132] In one embodiment, when the computer program is executed by a processor, the following steps are also implemented:

[0133] The second magnetically sensitive films are orthogonal to each other and the first magnetically sensitive films are orthogonal to each other.

[0134] In one embodiment, when the computer program is executed by a processor, the following steps are also implemented:

[0135] The first magnetic sensitive film and the second magnetic sensitive film are made of triaxial magnetic sensitive material.

[0136] In one embodiment, when the computer program is executed by a processor, the following steps are also implemented:

[0137] The preparation process of the first magnetic sensitive film and the second magnetic sensitive film includes:

[0138] On a single crystal substrate, a molecular beam epitaxy method or a pulse laser deposition technique is used to deposit a magnetically sensitive film on a triaxial magnetically sensitive material to obtain a first magnetically sensitive film and a second magnetically sensitive film.

[0139] It should be noted that the user information (including but not limited to user device information, user personal information, etc.) and data (including but not limited to data used for analysis, stored data, displayed data, etc.) involved in this application are all information and data authorized by the user or fully authorized by all parties, and the collection, use and processing of relevant data must comply with relevant laws, regulations and standards of relevant countries and regions.

[0140] Those skilled in the art can understand that all or part of the processes in the above-mentioned embodiments can be completed by instructing the relevant hardware through a computer program, and the computer program can be stored in a non-volatile computer-readable storage medium. When the computer program is executed, it can include the processes of the embodiments of the above-mentioned methods. Among them, any reference to the memory, database or other medium used in the embodiments provided in this application can include at least one of non-volatile and volatile memory. Non-volatile memory can include read-only memory (ROM), magnetic tape, floppy disk, flash memory, optical memory, high-density embedded non-volatile memory, resistive random access memory (ReRAM), magnetoresistive random access memory (MRAM), ferroelectric random access memory (FRAM), phase change memory (PCM), graphene memory, etc. Volatile memory can include random access memory (RAM) or external cache memory, etc. As an illustration and not limitation, RAM can be in various forms, such as static random access memory (SRAM) or dynamic random access memory (DRAM). The database involved in each embodiment provided in this application may include at least one of a relational database and a non-relational database. Non-relational databases may include distributed databases based on blockchains, etc., but are not limited to this. The processor involved in each embodiment provided in this application may be a general-purpose processor, a central processing unit, a graphics processor, a digital signal processor, a programmable logic device, a data processing logic device based on quantum computing, etc., but are not limited to this.

[0141] The technical features of the above embodiments may be combined arbitrarily. To make the description concise, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0142] The above embodiments only express several implementation methods of the present application, and the descriptions thereof are relatively specific and detailed, but they cannot be understood as limiting the scope of the present application. It should be pointed out that, for a person of ordinary skill in the art, several variations and improvements can be made without departing from the concept of the present application, and these all belong to the protection scope of the present application. Therefore, the protection scope of the present application shall be subject to the attached claims.

Claims

1. A method for determining magnetic field parameters, characterized in that: The method comprises: Acquire a first parameter of a three-axis magnetic field obtained by the three-axis magnetic field sensor based on a first magnetic sensitive film set, and a second parameter of a three-axis magnetic field obtained based on a second magnetic sensitive film set; wherein the first magnetic sensitive film set includes two groups of first magnetic sensitive films; and the second magnetic sensitive film set includes two groups of second magnetic sensitive films; The first parameter of the three-axis magnetic field and the second parameter of the three-axis magnetic field are inversely solved to obtain the magnetic field parameters of the three-axis magnetic field.

2. The method according to claim 1, characterized in that The method of obtaining a first parameter of a three-axis magnetic field obtained by the three-axis magnetic field sensor based on the first magnetic sensitive film set and a second parameter of a three-axis magnetic field obtained based on the second magnetic sensitive film set includes: Performing a patterned magnetic sensitivity test on the first magnetic sensitive film set to obtain the first parameter of the three-axis magnetic field; Performing a patterned magnetic sensitivity test on the second magnetic sensitive film set to obtain the second parameter of the three-axis magnetic field; The first parameters of the three-axis magnetic field are parameters for the X-axis magnetic field and the Z-axis magnetic field; and the second parameters of the three-axis magnetic field are parameters for the Y-axis magnetic field and the Z-axis magnetic field.

3. The method according to claim 1, characterized in that The two groups of first magnetically sensitive films in the first magnetically sensitive film set have opposite first bevel angles; the two groups of second magnetically sensitive films in the second magnetically sensitive film set have opposite second bevel angles.

4. The method according to claim 3, characterized in that The second magnetically sensitive films are orthogonal to each other and the first magnetically sensitive films are orthogonal to each other.

5. The method according to claim 1, characterized in that The first magnetically sensitive film and the second magnetically sensitive film are made of a triaxial magnetically sensitive material.

6. The method according to claim 5, characterized in that The preparation process of the first magnetic sensitive film and the second magnetic sensitive film includes: On a single crystal substrate, a molecular beam epitaxy method or a pulsed laser deposition technique is used to deposit a magnetically sensitive thin film on a triaxial magnetically sensitive material to obtain the first magnetically sensitive thin film and the second magnetically sensitive thin film.

7. A magnetic field parameter determination device, characterized in that: The device comprises: An acquisition module, used for acquiring a first parameter of a three-axis magnetic field acquired by a three-axis magnetic field sensor based on a first magnetic sensitive film set, and a second parameter of a three-axis magnetic field acquired based on a second magnetic sensitive film set; wherein the first magnetic sensitive film set includes two groups of first magnetic sensitive films; the second magnetic sensitive film set includes two groups of second magnetic sensitive films; each of the second magnetic sensitive films is orthogonal to each of the first magnetic sensitive films; The analytical module is used to perform parameter inverse analysis on the first parameter of the three-axis magnetic field and the second parameter of the three-axis magnetic field to obtain the magnetic field parameters of the three-axis magnetic field.

8. A computer device comprising a memory and a processor, wherein the memory stores a computer program, wherein: When the processor executes the computer program, the steps of the method according to any one of claims 1 to 6 are implemented.

9. A computer-readable storage medium having a computer program stored thereon, characterized in that: When the computer program is executed by a processor, the steps of the method according to any one of claims 1 to 6 are implemented.

10. A computer program product, comprising a computer program, characterized in that When the computer program is executed by a processor, the steps of the method according to any one of claims 1 to 6 are implemented.

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