Air inlet device of wafer processing equipment

Abstract

The invention provides an air inlet device of wafer processing equipment. The air inlet device comprises an upper plate and a lower plate, the lower plate is provided with an upper surface and a lower surface opposite to the upper surface, and the lower plate is arranged below the upper plate; the first gas channel is used for conveying gas to the edge area and / or the middle area of the gas inlet device, and the first gas channel is located between the lower surface of the upper plate and the upper surface of the lower plate; the second gas channel is used for conveying gas to the central area of the gas inlet device, and the second gas channel vertically penetrates through the lower plate. According to the invention, the first gas channel and the second gas channel which are independent are arranged, so that gas can be fed into different areas of the wafer, and the problem of non-uniform gas distribution is solved.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor equipment, and in particular to the technical field of an air intake device of an ICP etching equipment. Background Art

[0002] During the semiconductor chip processing, etching equipment, such as ICP or CCP, is required to etch grooves on the surface of the wafer.

[0003] Take ICP etching equipment as an example. In this equipment, the coil couples the energy of the radio frequency power supply to the plasma in the vacuum chamber through the dielectric window by electromagnetic induction.

[0004] In the prior art, a dielectric window is used to transport process gas into the cavity. The uniformity of process gas distribution will affect the uniformity of etching. However, the dielectric window of the prior art is still insufficient in terms of uniformity of gas distribution. Summary of the invention

[0005] The purpose of the present invention is to provide an air intake device for wafer processing equipment to solve the problem of air intake uniformity.

[0006] In order to achieve the above objectives, the present invention is implemented by the following technical solutions:

[0007] The present invention provides an air intake device for wafer processing equipment, comprising:

[0008] an upper plate having an upper surface and an opposite lower surface;

[0009] A lower plate, the lower plate having an upper surface and an opposite lower surface, the lower plate being disposed below the upper plate;

[0010] a first gas channel, the first gas channel being used to deliver gas to an edge region and / or a middle region of the air intake device, the first gas channel being located between a lower surface of the upper plate and an upper surface of the lower plate;

[0011] The second gas channel is used to transport gas to the central area of ​​the air intake device, and the second gas channel vertically penetrates the lower plate.

[0012] Optionally, the upper plate is provided with a first air inlet hole and a second air inlet hole, the first air inlet hole is provided at the center of the upper plate, and the second air inlet hole is provided adjacent to the first air inlet hole;

[0013] The first air inlet hole is connected to the first gas channel, and the second air inlet hole is connected to the second gas channel.

[0014] Optionally, the first gas channel extends radially along the upper surface of the lower plate.

[0015] Optionally, the lower plate is provided with a first air outlet and a second air outlet, both of which are connected to the first gas channel, the first air outlet is provided in the edge area, and the second air outlet is provided in the middle area.

[0016] Optionally, the lower plate is further provided with a third air outlet, the third air outlet is connected to the second gas channel, and the third air outlet is arranged in the central area.

[0017] Optionally, the lower plate includes a partition plate, which is arranged in a central area of ​​an upper surface of the lower plate, and the partition plate is used to separate the first gas channel from the second gas channel.

[0018] Optionally, part of the first gas channel is located on the upper surface of the partition, and part of the second gas channel is located on the lower surface of the partition.

[0019] Optionally, an upwardly protruding air nozzle is provided on the upper surface of the partition, and the air nozzle is connected to the second air inlet hole.

[0020] Optionally, the air nozzle vertically penetrates the upper surface and the lower surface of the partition.

[0021] Optionally, a countersunk hole is provided at the lower portion of the second air inlet hole of the upper plate, and the countersunk hole is airtightly matched with the air nozzle.

[0022] Optionally, at least one protrusion is further provided on the upper surface of the partition, and the shape and size of the protrusion are the same as the upwardly protruding part of the gas nozzle.

[0023] Optionally, the protrusions and the upwardly protruding portion of the gas nozzle are distributed at equal intervals along the circumference of the upper surface of the partition.

[0024] Optionally, the upper surface of the protrusion abuts against the lower surface of the upper plate.

[0025] Optionally, the protrusion and the upwardly protruding portion of the air nozzle are both cylindrical.

[0026] Optionally, the lower plate further includes a flow-uniform portion, which is disposed in a central area of ​​the lower plate and between the partition plate and the third air outlet.

[0027] Optionally, the flow equalizing portion is provided with flow equalizing holes penetrating the upper surface and the lower surface thereof.

[0028] Optionally, a first air chamber is arranged between the upper surface of the flow equalizer and the lower surface of the partition; a second air chamber is arranged between the lower surface of the flow equalizer and the third air outlet hole, and the flow equalizer hole connects the first air chamber and the second air chamber.

[0029] Optionally, the diameter of the first air chamber is smaller than the diameter of the partition, and the diameter of the first air chamber is larger than the diameter of the flow-uniform part; the diameter of the second air chamber is the same as the diameter of the lower part of the flow-uniform part.

[0030] Optionally, the flow-uniform hole and the third air outlet hole are vertically offset.

[0031] The present invention also provides a wafer processing device, comprising:

[0032] Cavity,

[0033] As the air intake device mentioned above, the air intake device is arranged above the cavity and is used to transport process gas to the cavity.

[0034] Optionally, it further comprises: an air intake pipeline, through which the process gas is connected to the air intake device, for conveying the process gas to the air intake device;

[0035] The air intake pipeline includes a first pipeline and a second pipeline connected in parallel;

[0036] The first pipeline is used to introduce a first process gas into the first gas channel and the second gas channel of the gas intake device, and the second pipeline is used to introduce a second process gas into the first gas channel and the second gas channel of the gas intake device, and the first process gas and the second process gas are different.

[0037] Optional,

[0038] The first pipeline includes a first main line, a flow ratio controller, a first branch and a second branch, the first branch and the second branch are connected in parallel and connected to the downstream of the first main line through the flow ratio controller;

[0039] The second pipeline includes a second main line, a flow ratio controller, a third branch and a fourth branch, the third branch and the fourth branch are connected in parallel and connected to the downstream of the second main line through the flow ratio controller;

[0040] The first branch, the second branch, the third branch and the fourth branch are respectively provided with a first fast valve.

[0041] Optionally, the air intake pipeline further includes a bypass, one end of which is connected to the first branch, the second branch, the third branch and the fourth branch respectively, and the other end of which is connected to the pump;

[0042] A second quick valve is respectively arranged at the connection between one end of the bypass and the branch.

[0043] Compared with the prior art, the present invention has the following advantages:

[0044] The present invention provides a first gas channel and a second gas channel, so that process gas can be delivered to different areas of the wafer, ensuring uniform distribution of the process gas on the surface of the wafer. BRIEF DESCRIPTION OF THE DRAWINGS

[0045] In order to more clearly illustrate the technical solution of the present invention, the following briefly introduces the drawings required for the description. Obviously, the drawings described below are an embodiment of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative work:

[0046] Figure 1 It is a structural schematic diagram of the wafer processing equipment of the present invention;

[0047] Figure 2 It is a structural schematic diagram of the air intake device of the present invention;

[0048] Figure 3 It is a structural schematic diagram of another air intake device of the present invention;

[0049] Figure 4 A bottom view of the air intake device of the present invention;

[0050] Figure 5 is a partial schematic diagram of the air intake device of the present invention;

[0051] Figure 6 It is a partial enlarged schematic diagram of the air intake device of the present invention;

[0052] Figure 7 It is a schematic structural diagram of the partition of the present invention;

[0053] Figure 8 is a cross-sectional view of a separator of the present invention;

[0054] Fig. 9 It is a structural schematic diagram of the flow uniforming part of the present invention;

[0055] Fig.10 is a cross-sectional view of the flow-uniform portion of the present invention;

[0056] Fig.11 It is a structural schematic diagram of the upper plate of the present invention;

[0057] Fig.12 It is a structural schematic diagram of the lower plate of the present invention;

[0058] Fig.13 It is a schematic diagram of the structure of the air intake pipeline of the present invention. DETAILED DESCRIPTION

[0059] The scheme proposed by the present invention is further described in detail below in conjunction with the accompanying drawings and specific implementation methods. According to the following description, the advantages and features of the present invention will be clearer. It should be noted that the accompanying drawings are in a very simplified form and use non-precise proportions, which are only used to conveniently and clearly assist in explaining the purpose of the implementation method of the present invention. In order to make the purposes, features and advantages of the present invention more obvious and easy to understand, please refer to the accompanying drawings. It should be noted that the structures, proportions, sizes, etc. illustrated in the accompanying drawings of this specification are only used to match the contents disclosed in the specification for people familiar with this technology to understand and read, and are not used to limit the limiting conditions for the implementation of the present invention, so they have no technical substantive significance. Any structural modification, change in proportional relationship or adjustment of size, without affecting the effects that the present invention can produce and the purposes that can be achieved, should still fall within the scope of the technical content disclosed by the present invention.

[0060] Figure 1 The schematic diagram of the structure of the wafer processing equipment of the present invention is shown, and the wafer processing equipment can be at least one of an etching equipment, a CVD equipment, and a PVD equipment. This article takes the ICP etching equipment as an example. Figure 1 As shown, the etching equipment includes: a chamber 201, a base 202, an air inlet device 300, a heating component 243, a pressing plate and a base 203. The chamber 201 is used to process wafers and perform etching process on the wafers. The base 202 is arranged in the chamber 201; the air inlet device 300 is arranged above the chamber 201, and is used to evenly distribute the process gas delivered to the chamber on the surface of the wafer; the heating component is arranged on the upper surface of the air inlet device 300, and is used to control the temperature of the air inlet device 300; the pressing plate is arranged above the heating component 243, and is used to fix the heating component on the air inlet device 300, and is also used to seal the air inlet device 300, that is, to seal the upper plate and the lower plate of the air inlet device 300; specifically, the heating component 243 is a circular thin sheet with a thickness of less than or equal to 5 mm, and the heating component is arranged in the central area of ​​the upper surface of the air inlet device 300, and is used to heat the central area of ​​the air inlet device 300.

[0061] The base 203 is disposed between the air inlet device 300 and the upper edge of the cavity 201. Optionally, the air inlet device is circular and the base is annular. An edge heating element is disposed in the base. The edge heating element 320 is used to heat the edge area of ​​the air inlet device 300. The air inlet device 300 can uniformly control the temperature of the air inlet device 300 through the heating component in the central area and the edge heating element at the edge.

[0062] See the attached Figure 1The etching equipment also includes a pump, an air intake pipeline, a process gas source 208, a coil, a coil support 204, a first plasma source 205, a second plasma source 206, a matcher 207 and a controller 209. The process gas in the process gas source 208 is connected to the air intake device 300 through the air intake pipeline, which is used to transport the process gas to the air intake device 300, and then the process gas is evenly distributed in the cavity through the air intake device 300. The pump is connected to the cavity 201, which is used to extract the process gas after the process out of the cavity. The coil is arranged above the heating component 243, and the coil is fixed above the cavity 201 through the coil support 204. The first plasma source 205 is connected to the coil through the matcher, which is used to transmit a radio frequency signal to the coil, so that plasma is generated in the cavity 201 during the etching process. The second plasma source 206 is connected to the electrode in the base through the matcher 207, and the controller 209 is respectively connected to the first plasma source 205 and the second plasma source 206, and is used to control the first plasma source 205 and the second plasma source 206. The coil is a planar coil, and the coil is spiral, which includes an inner coil and an outer coil, the outer coil forms a roughly ring shape, and the inner coil also forms a roughly ring shape, and the two rings are concentrically arranged, and the centers of the two circles are concentric with the center of the base 202, so as to ensure the uniformity of the plasma.

[0063] Figure 2 The structural schematic diagram of the air intake device of the present invention is shown as follows: Figure 2 As shown, the air intake device 300 includes: an upper plate 310, a lower plate 320, a first gas channel 351 and a second gas channel 352. The lower plate 320 is arranged below the upper plate 310. The upper plate 310 has an upper surface and an opposite lower surface; the lower plate 320 has an upper surface and an opposite lower surface; preferably, the upper plate and the lower plate are both circular.

[0064] The first gas channel 351 is located between the lower surface of the upper plate 310 and the upper surface of the lower plate 320, and the first gas channel 351 is used to transport gas to the edge area and / or the middle area of ​​the air intake device. The second gas channel 352 vertically penetrates the lower plate 320, and the second gas channel 352 is used to transport gas to the central area of ​​the air intake device. Preferably, the upper plate and the lower plate are both circular and concentric. Among them, the edge area is opposite to the edge area of ​​the wafer, the central area is opposite to the central area of ​​the wafer, the middle area is the area between the edge area and the central area, the central area is circular, and the edge area and the middle area are both annular. Optionally, the first gas channel 351 can simultaneously transport gas to the edge area and the middle area of ​​the air intake device, such as Figure 3 Of course, the first gas channel 351 may only deliver gas to one of the edge region or the middle region of the air intake device, such as Figure 2 Optionally, the first gas channel 351 and the second gas channel 352 can be controlled independently of each other. The first gas channel 351 and the second gas channel 352 provided in the present invention can independently deliver gas to different areas of the wafer, so that the gas distribution on the wafer surface is more uniform.

[0065] like Figure 3 The upper plate 310 is provided with a first air inlet hole 311 and a second air inlet hole 312. The first air inlet hole is provided at the center of the upper plate, and the second air inlet hole is provided adjacent to the first air inlet hole. The first air inlet hole 311 is connected to the first gas channel 351, and the second air inlet hole 312 is connected to the second gas channel 352. The first air inlet hole 311 and the second air inlet hole 312 both extend vertically and pass through the upper surface and the lower surface of the upper plate 310.

[0066] Figure 4 A bottom view of the air intake device is shown. Figure 4 As shown, the lower plate 320 is provided with a first air outlet 321 and a second air outlet 322, both of which are connected to the first gas channel 351, the first air outlet 321 is arranged in the edge area, and the second air outlet 322 is arranged in the middle area. The lower plate 320 is also provided with a third air outlet 327, the third air outlet 327 is connected to the second gas channel 352, and the third air outlet 327 is arranged in the central area. The first air outlet 321, the second air outlet 322 and the third air outlet 327 are all extended vertically, passing through the upper surface and the lower surface of the lower plate 320. There are multiple first air outlets 321, and the multiple first air outlets 321 are arranged in a ring, the center of the ring is concentric with the center of the lower plate, and optionally, the ring is one or more groups. Similarly, there are a plurality of second air outlet holes 322, and the plurality of second air outlet holes 322 are arranged in a ring shape, and the center of the ring shape is concentric with the center of the lower plate. Optionally, the ring shape is one or more groups. Similarly, there are a plurality of third air outlet holes 327, and the plurality of third air outlet holes 327 are arranged in a ring shape, and the center of the ring shape is concentric with the center of the lower plate. Optionally, the ring shape is one, two or more groups.

[0067] Figure 5-Figure 6 A partial schematic diagram of the air intake device is shown. Figure 5-Figure 6 As shown, the lower plate 320 includes a partition 330, which is disposed in the central area of ​​the upper surface of the lower plate, and is used to separate the first gas channel 351 from the second gas channel 352. Part of the first gas channel 351 is located on the upper surface of the partition 330, and part of the second gas channel 352 is located on the lower surface of the partition 330.

[0068] Figure 7-Figure 8 The schematic diagram of the structure of the partition is shown in FIG. Figure 7-Figure 8 As shown, the partition 330 is circular, and the center of the partition is concentric with the center of the lower plate. The upper surface of the partition 330 is provided with an upwardly protruding gas nozzle 331, and the gas nozzle 331 is arranged near the center of the partition 330. The gas nozzle is connected to the second gas inlet hole and is used to introduce gas from the second gas inlet hole into the second gas channel 352. The gas nozzle vertically penetrates the upper and lower surfaces of the partition 330. The lower part of the second gas inlet hole of the upper plate 310 is provided with a counterbore 314, and the counterbore 314 is airtightly matched with the gas nozzle 331. At least one protrusion 332 is also provided on the upper surface of the partition, and the shape and size of the protrusion 332 are the same as the upwardly protruding part of the gas nozzle, wherein the size refers to the horizontal width of the outer contour of the gas nozzle and the protrusion 332. Taking the gas nozzle as a circle as an example, the size refers to the diameter of the circle. The upper surface of the protrusion abuts against the lower surface of the upper plate. Preferably, the protrusions 332 and the upwardly protruding portion of the gas nozzle are equally spaced along the circumference of the upper surface of the partition 330, and the protrusions 332 and the upwardly protruding portion of the gas nozzle are both cylindrical. The setting of the protrusions is conducive to fixing the partition 330, and at the same time, it allows the gas to diffuse more evenly on the upper surface of the partition 330.

[0069] Continue to see Figure 5-Figure 6 The lower plate 320 further includes a flow equalizer 340 , which is disposed in a central area of ​​the lower plate 320 and between the partition plate 330 and the third air outlet.

[0070] Figure 9-10 Schematic diagram of the structure of the flow equalizer is shown in FIG. Figure 9-10 As shown, the flow equalizer 340 is provided with flow equalizer holes 341 penetrating the upper and lower surfaces thereof, and the flow equalizer holes 341 extend vertically. Preferably, the flow equalizer 340 is a cylinder, and a circumferential annular protrusion 342 is provided on its upper edge. Further preferably, there are a plurality of flow equalizer holes 341, and the plurality of flow equalizer holes 341 are arranged in a ring shape, and optionally, the ring shape is a group.

[0071] like Figure 6In some preferred embodiments, a first air chamber 361 is provided between the upper surface of the flow-leveling part 340 and the lower surface of the partition; a second air chamber 362 is provided between the lower surface of the flow-leveling part 340 and the third air outlet hole 327, and the flow-leveling hole 341 connects the first air chamber and the second air chamber. Preferably, the first air chamber 361 and the second air chamber 362 are both cylindrical, and the centers of the first air chamber 361 and the second air chamber 362 are concentric with the center of the lower plate. The diameter of the first air chamber is smaller than the diameter of the partition, and the diameter of the first air chamber is larger than the diameter of the flow-leveling part; the diameter of the second air chamber is the same as the diameter of the lower part of the flow-leveling part. Specifically, the diameter of the partition is larger than the diameter of the first air chamber, and the diameter of the first air chamber is larger than the diameter of the annular protrusion 342 on the upper edge of the flow-leveling part 340, and the diameter of the lower part of the flow-leveling part 340 is the same as the diameter of the second air chamber 362. The height of the first air chamber 361 is smaller than the height of the flow-leveling hole 341, and preferably, the height of the first air chamber is less than or equal to 1 mm. The height of the second air chamber is less than the height of the third air outlet 327, and the height of the second air chamber is less than or equal to 1 mm. The first air chamber and the second air chamber are low in height, which is conducive to preventing ignition caused by high voltage. At the same time, the height of the uniform flow hole 341 and the third air outlet 327 is high, which is conducive to the gas filling the first air chamber and the second air chamber, thereby ensuring the effect of uniform gas flow.

[0072] Preferably, the diameter of the flow-uniform hole 341 is larger than the diameter of the third air outlet hole, and the flow-uniform hole 341 and the third air outlet hole are vertically offset, that is, the flow-uniform hole 341 and the third air outlet hole 327 are not collinear, thereby increasing the flow-uniform effect.

[0073] Continue to see Figure 6 The gas reaches the first horizontal gas channel through the first vertical air inlet, and then enters the edge area and the middle area of ​​the cavity through the first air outlet and the second air outlet to form a first flow path S1. The gas enters the gas nozzle through the second vertical air inlet, and then reaches the first horizontal air chamber, and then goes down to the uniform flow hole and the second air chamber in turn, and enters the central area of ​​the cavity from the third air outlet to form a second flow path S2.

[0074] Fig.11 The schematic diagram of the structure of the upper plate of the present invention is shown in FIG. Fig.11 As shown, the upper plate 310 is circular, and an annular boss 313 is arranged circumferentially on its edge. The annular boss 313 is arranged on the upper part of the upper plate 310, and the upper surface of the annular boss is flush with the upper surface of the upper plate.

[0075] Fig.12 The schematic diagram of the structure of the lower plate of the present invention is shown in FIG. Fig.12As shown, the lower plate 320 is circular, and the radius of the lower plate 320 is greater than the radius of the upper plate 310. A plurality of concentric circular grooves are arranged on the upper surface of the lower plate, and the plurality of circular grooves are stacked up and down, and the center of the circular groove is concentric with the center of the lower plate. The plurality of circular grooves include, from top to bottom, a first circular groove, a second circular groove 323, a third circular groove 324, a fourth circular groove 325, and a fifth circular groove.

[0076] See also Figure 6 The first circular groove is used to place the upper plate 310. The diameter of the first circular groove is the same as that of the upper plate 310. The annular boss 313 of the upper plate is arranged at the circumferential upper edge of the first circular groove to achieve sealing between the upper plate 310 and the lower plate 320. A plurality of radial grooves extending along the radial direction are arranged at the bottom of the first circular groove. The intervals between two adjacent radial grooves are the same. The radial grooves form the first gas channel 351. The radial grooves at least span the middle area and the edge area, and the radial grooves connect the central area and the edge area.

[0077] The second circular groove 323 is used to place the partition 330 , and the diameter of the second circular groove 323 is smaller than the diameter of the first circular groove; the height and diameter of the second circular groove 323 are the same as the height and diameter of the partition 330 .

[0078] The third circular groove 324 is used to form the first air chamber 361 , and the diameter of the third circular groove 324 is smaller than the diameter of the second circular groove.

[0079] The fourth circular groove 325 is used to accommodate the annular protrusion 342 on the upper edge of the flow uniforming portion, and the diameter of the fourth circular groove is smaller than the diameter of the third circular groove 324 .

[0080] The fifth circular groove is used to accommodate the flow equalizer and form the second air chamber, and the diameter of the fifth circular groove is smaller than the diameter of the fourth circular groove. The bottom of the fifth circular groove forms a central air outlet 326, which is located in the central area, and the third air outlet is arranged in the central air outlet 326.

[0081] ICP etching equipment is widely used in the Bosch process. The Bosch process achieves the etching of high aspect ratio grooves by alternately switching the etching gas and the passivation gas into the chamber. In order to ensure the conformality of the groove, the pressure and flow rate need to be stable when the etching gas and the passivation gas are switched. Fig.13 The schematic diagram of the structure of the intake pipe is shown in FIG. Fig.13As shown, the air intake pipeline includes a first pipeline and a second pipeline in parallel. The first pipeline is used to introduce a first process gas into the first gas channel and the second gas channel of the air intake device 300, and the second pipeline is used to introduce a second process gas into the first gas channel and the second gas channel of the air intake device 300, and the first process gas and the second process gas are different. Among them, the first process gas can be, for example, a passivation gas, and the second gas can be, for example, an etching gas. Through the arrangement of the first pipeline and the second pipeline, the passivation gas and the etching gas are repeatedly switched and alternately introduced into the cavity. The first pipeline is connected to the air intake device 300 downstream through the first air inlet hole 311 and the second air inlet hole 312, and the second pipeline is connected to the air intake device 300 downstream through the first air inlet hole 311 and the second air inlet hole 312.

[0082] The first pipeline includes a first main line 281, a flow ratio controller (FRC), a first branch 2811 and a second branch 2812. The first branch 2811 and the second branch 2812 are connected in parallel and connected to the downstream of the first main line 281 through the flow ratio controller; the downstream of the first branch 2811 is connected to the second air inlet 312, and the downstream of the second branch 2812 is connected to the first air inlet 311. The flow ratio controller is used to control the process gas flow ratio of the first branch and the second branch, thereby controlling the distribution ratio of the process gas entering the central area, the edge area and the middle area of ​​the chamber.

[0083] The second pipeline includes a second main path 282, a flow ratio controller (FRC), a third branch 2821 and a fourth branch 2822. The third branch 2821 and the fourth branch 2822 are connected in parallel and connected to the downstream of the second main path 282 through the flow ratio controller; the downstream of the third branch 2821 is connected to the second air inlet 312, and the downstream of the fourth branch 2822 is connected to the first air inlet 311. The flow ratio controller is used to control the process gas flow ratio of the third branch and the fourth branch, thereby controlling the distribution ratio of the process gas entering the central area, the edge area and the middle area in the chamber.

[0084] The first main path 281 and the second main path 282 are provided with valves for switching the first main path and the second main path. The first branch, the second branch, the third branch and the fourth branch are provided with first fast valves respectively. The first fast valve is used to switch between the passivation gas and the etching gas.

[0085] The air inlet pipeline also includes a bypass 283, one end of which is connected to the first branch, the second branch, the third branch and the fourth branch respectively, and the other end of the bypass is connected to the pump. A second quick valve is respectively set at the connection between one end of the bypass 283 and the above-mentioned branches. The second quick valve is used to transport the unused process gas to the pump when the process gas is switched, so as to ensure the stability of the flow rate and pressure in the chamber when the process gas is switched. Preferably, the first quick valve and the second quick valve are both ALD valves to increase the speed of gas switching.

[0086] For example, during the etching process, the first fast valves on the third branch and the fourth branch are opened, the second fast valve on the bypass 283 connected to the third and fourth branches is closed, and the etching gas respectively enters the second gas inlet hole 312 and the first gas inlet hole 311. At this time, the first fast valves on the first branch and the second branch are closed, the second fast valve on the bypass 283 connected to the first and second branches is opened, and the passivation gas is delivered to the pump.

[0087] When switching from the etching process to the passivation process, the first fast valves on the third branch and the fourth branch are closed, the second fast valve on the bypass 283 connected to the third and fourth branches is opened, and the etching gas is delivered to the pump. At the same time, the first fast valves on the first branch and the second branch are opened, the second fast valve on the bypass 283 connected to the first and second branches is closed, and the passivation gas enters the second air inlet 312 and the first air inlet 311 respectively.

[0088] The air intake pipeline of the present invention can ensure stability during gas switching, thereby ensuring better conformality of the etched grooves.

[0089] It should be noted that, in this article, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that the process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of more restrictions, the elements defined by the sentence "including one..." do not exclude the existence of other identical elements in the process, method, article or device including the elements. In addition, the term "connection" herein means that A and B are directly connected, or that A and B are indirectly connected, such as A and B are connected through C, or even through more components such as C and D, and A and B can be connected in one piece, or in separate pieces, or removable, or fixed. The term "optional" herein means that the technical feature can be combined or not combined with any feature in the text.

[0090] Although the content of the present invention has been described in detail through the above preferred embodiments, it should be appreciated that the above description should not be considered as a limitation of the present invention. After reading the above content, it will be apparent to those skilled in the art that various modifications and substitutions of the present invention will occur. Therefore, the protection scope of the present invention should be limited by the appended claims.

Claims

1. An air intake device for wafer processing equipment, characterized in that: include: an upper plate having an upper surface and an opposite lower surface; A lower plate, the lower plate having an upper surface and an opposite lower surface, the lower plate being disposed below the upper plate; a first gas channel, the first gas channel being used to deliver gas to an edge region and / or a middle region of the air intake device, the first gas channel being located between a lower surface of the upper plate and an upper surface of the lower plate; The second gas channel is used to transport gas to the central area of ​​the air intake device, and the second gas channel vertically penetrates the lower plate.

2. The air intake device of the wafer processing equipment according to claim 1, characterized in that: The upper plate is provided with a first air inlet hole and a second air inlet hole, the first air inlet hole is provided at the center of the upper plate, and the second air inlet hole is provided adjacent to the first air inlet hole; The first air inlet hole is connected to the first gas channel, and the second air inlet hole is connected to the second gas channel.

3. The air intake device of the wafer processing equipment according to claim 2, characterized in that: The first gas channel extends along the radial direction of the upper surface of the lower plate.

4. The air intake device of the wafer processing equipment according to claim 3, characterized in that: The lower plate is provided with a first air outlet and a second air outlet, both of which are connected to the first gas channel, the first air outlet is provided in the edge area, and the second air outlet is provided in the middle area.

5. The air intake device of the wafer processing equipment according to claim 3, characterized in that: The lower plate is further provided with a third air outlet hole, the third air outlet hole is connected to the second gas channel, and the third air outlet hole is arranged in the central area.

6. The air intake device of the wafer processing equipment according to claim 5, characterized in that: The lower plate includes a partition plate, which is disposed in a central area of ​​an upper surface of the lower plate, and is used to separate the first gas channel from the second gas channel.

7. The air intake device of the wafer processing equipment according to claim 6, characterized in that: Part of the first gas channel is located on the upper surface of the partition, and part of the second gas channel is located on the lower surface of the partition.

8. The air intake device of the wafer processing equipment according to claim 7, characterized in that: An upwardly protruding air nozzle is disposed on the upper surface of the partition, and the air nozzle is connected to the second air inlet hole.

9. The air intake device of the wafer processing equipment according to claim 8, characterized in that: The air nozzle vertically penetrates the upper surface and the lower surface of the partition.

10. The air intake device of the wafer processing equipment according to claim 8, characterized in that: A countersunk hole is arranged at the lower part of the second air inlet hole of the upper plate, and the countersunk hole is airtightly matched with the air nozzle.

11. The air intake device of the wafer processing equipment according to claim 8, characterized in that: At least one protrusion is also disposed on the upper surface of the partition, and the shape and size of the protrusion are the same as the upwardly protruding portion of the gas nozzle.

12. The air intake device of the wafer processing equipment according to claim 11, characterized in that: The protrusions and the upwardly protruding portion of the gas nozzle are distributed at equal intervals along the circumference of the upper surface of the partition.

13. The air intake device of the wafer processing equipment according to claim 12, characterized in that: The upper surface of the protrusion abuts against the lower surface of the upper plate.

14. The air intake device of the wafer processing equipment according to any one of claims 11 to 13, characterized in that: The protrusion and the upwardly protruding portion of the air nozzle are both cylindrical.

15. The air intake device of the wafer processing equipment according to any one of claims 7 to 10, characterized in that: The lower plate further comprises a flow-uniform portion, which is arranged in a central area of ​​the lower plate and between the partition plate and the third air outlet.

16. The air intake device of the wafer processing equipment according to claim 15, characterized in that: The flow-uniform part is provided with flow-uniform holes penetrating the upper surface and the lower surface thereof.

17. The air intake device of the wafer processing equipment according to claim 16, characterized in that: A first air chamber is arranged between the upper surface of the flow equalizer and the lower surface of the partition; a second air chamber is arranged between the lower surface of the flow equalizer and the third air outlet hole, and the flow equalizer hole connects the first air chamber and the second air chamber.

18. The air intake device of the wafer processing equipment according to claim 17, characterized in that: The diameter of the first air chamber is smaller than the diameter of the partition, and the diameter of the first air chamber is larger than the diameter of the flow-uniform part; the diameter of the second air chamber is the same as the diameter of the lower part of the flow-uniform part.

19. The air intake device of the wafer processing equipment according to claim 18, characterized in that: The flow-uniform hole and the third air outlet hole are vertically offset.

20. A wafer processing device, characterized in that: include: Cavity, The air intake device according to any one of claims 1 to 19, wherein the air intake device is arranged above the cavity and is used to transport process gas to the cavity.

21. The wafer processing equipment according to claim 20, characterized in that: Also includes: an air intake pipeline, through which the process gas is connected to the air intake device, for conveying the process gas to the air intake device; The air intake pipeline includes a first pipeline and a second pipeline connected in parallel; The first pipeline is used to introduce a first process gas into the first gas channel and the second gas channel of the gas intake device, and the second pipeline is used to introduce a second process gas into the first gas channel and the second gas channel of the gas intake device, and the first process gas and the second process gas are different.

22. The wafer processing equipment according to claim 21, characterized in that: The first pipeline includes a first main line, a flow ratio controller, a first branch and a second branch, the first branch and the second branch are connected in parallel and connected to the downstream of the first main line through the flow ratio controller; The second pipeline includes a second main line, a flow ratio controller, a third branch and a fourth branch, the third branch and the fourth branch are connected in parallel and connected to the downstream of the second main line through the flow ratio controller; The first branch, the second branch, the third branch and the fourth branch are respectively provided with a first fast valve.

23. The wafer processing equipment according to claim 22, characterized in that: The air intake pipeline further includes a bypass, one end of which is connected to the first branch, the second branch, the third branch and the fourth branch respectively, and the other end of which is connected to the pump; A second quick valve is respectively arranged at the connection between one end of the bypass and the branch.

Images