Inductively coupled krypton plasma drive circuit as a calibration source

Abstract

The application provides an inductively coupled krypton plasma driving circuit as a calibration source, which is used to solve the technical problem that the existing electrodeless driving krypton plasma driving circuit has a large current, a relatively large energy loss, and a driving frequency drift of the plasma, causing unstable krypton plasma excitation. The inductively coupled krypton plasma driving circuit as a calibration source provided by the application adopts a full-bridge inverter circuit built by a silicon carbide-based NMOS tube, and then controls the sequential conduction and cut-off of the four power switching tubes through two oppositely arranged first gate drivers, so as to realize the amplification of the radio frequency signal, effectively improve the circuit switching loss, and reduce the MOS tube heat generation. Meanwhile, the application has good stability, reliability and accuracy, ensures the effective excitation of the krypton plasma, improves the luminous intensity of the plasma, and solves the problem of short service life of the plasma calibration light source.

Description

Technical Field

[0001] This invention relates to krypton plasma driving circuits, and more particularly to an inductively coupled krypton plasma driving circuit used as a calibration source. Background Technology

[0002] The Michelson Interferometer (MIGHTI) can explore the relationship between low-atmosphere processes and high-atmosphere conditions, imaging the Earth's edge to obtain height-resolution neutral wind profiles ranging from 90 to 300 kilometers. The Michelson interferometer monitors atmospheric winds at all altitudes of interest by simultaneously measuring both the green and red atmospheric oxygen emission lines. The green atmospheric oxygen emission line, with a wavelength of 557.73 nm, is typically calibrated using an onboard or spaceborne calibration source as a frequency standard. Specifically, diffused light from the calibration source reaches the Michelson interferometer, providing a reference fringe pattern, which is compared with the fringes formed by the green atmosphere for calibration.

[0003] Because krypton plasma sources provide a green line at 557.03 nm, they are commonly used in the industry as spaceborne calibration sources. Currently, the most widely used is the electrode discharge krypton plasma source. However, the electrodes in this source are eroded by the krypton plasma during discharge, gradually wearing down and causing a decline in discharge performance, ultimately affecting the luminous efficiency and stability of the source. This wear is unavoidable, and the rate of electrode wear accelerates with increasing usage time, significantly shortening the source's lifespan. Electrode discharge krypton plasma sources can no longer meet the demands of spaceborne calibration sources with increasingly longer on-orbit operation times. To address this issue, an electrodeless driven krypton plasma source has been proposed. This source excites krypton plasma using a high-current radio frequency, avoiding physical electrode wear and greatly extending the source's lifespan. This source not only meets the requirements for long-term on-orbit operation but also possesses high luminous efficiency and stability, making it a very promising alternative. However, realizing the application of electrodeless driven krypton plasma sources is not easy, requiring the resolution of a series of technical challenges, particularly in circuit design. First, the excitation process of krypton plasma involves complex electromagnetic field distribution and energy transfer, requiring precise control to ensure stable plasma generation and maintenance. Second, electrodeless driven krypton plasma sources also require reliable switching control circuits. Since satellites need to frequently switch the light source during on-orbit operation according to specific mission requirements, the circuit design must be able to withstand multiple switching operations without affecting the stability and lifespan of the light source. However, existing electrodeless driven krypton plasma driving circuits suffer from high current, resulting in significant energy loss, and the plasma driving frequency drifts, leading to unstable krypton plasma excitation. Summary of the Invention

[0004] The purpose of this invention is to solve the technical problems of existing electrodeless krypton plasma driving circuits, which suffer from large energy loss due to high current and drift in plasma driving frequency, resulting in unstable krypton plasma excitation. The invention provides an inductively coupled krypton plasma driving circuit that can be used as a calibration source.

[0005] To achieve the above objectives, the technical solution of the present invention is as follows:

[0006] An inductively coupled krypton plasma driving circuit as a calibration source is characterized by including a radio frequency signal generation module, a radio frequency amplification module, and a high voltage generation module; the radio frequency signal generation module is used to generate radio frequency signals.

[0007] The radio frequency amplification module includes a full-bridge inverter circuit and a drive module;

[0008] The full-bridge inverter circuit includes an upper half-bridge and a lower half-bridge; the upper half-bridge includes power switch Q1 and power switch Q2, and the lower half-bridge includes power switch Q3 and power switch Q4.

[0009] The power switches Q1, Q2, Q3, and Q4 are all silicon carbide-based NMOS transistors. The drain of power switch Q1 is connected to the drain of power switch Q2, and the source of power switch Q3 is connected to the source of power switch Q4. The connection between the source of power switch Q1 and the drain of power switch Q3 serves as output terminal A, and the connection between the source of power switch Q2 and the drain of power switch Q4 serves as output terminal B.

[0010] The input terminal of the high voltage generating module is connected to the output terminal of the radio frequency signal generating module, and its output terminal is connected to the drain of power switch Q1 and the drain of power switch Q2, which is used to increase the voltage of the radio frequency signal to supply power to the full-bridge inverter circuit.

[0011] The driving module includes two first gate drivers and a first shaping circuit; the IN+ terminal of one first gate driver is connected to the output terminal of the RF signal generation module, and is used to directly input the RF signal into the corresponding first gate driver for conversion and amplification; the IN+ terminal of the other first gate driver is connected to the output terminal of the RF signal generation module through the first shaping circuit, and is used to invert the RF signal and input it into the corresponding first gate driver for conversion and amplification; the IN- terminals of the two first gate drivers are interconnected and grounded;

[0012] The gates of power switch Q2 and power switch Q3 are respectively connected to the two output terminals of a first gate driver, and the gates of power switch Q1 and power switch Q4 are respectively connected to the two output terminals of another first gate driver. This is used to control the sequential turn-on and turn-off of the four power switches according to the enhanced signals output by the two first gate drivers, so as to amplify the radio frequency signal and excite krypton plasma.

[0013] Furthermore, the first gate driver is an enhancement-mode gallium nitride field-effect transistor gate driver.

[0014] Furthermore, it also includes a first DC voltage regulator circuit;

[0015] The drive module also includes resistors R1, R2, R3, R4, R5, and R6;

[0016] The output terminal of the first DC voltage regulator circuit is connected to the VDD terminal of the two first gate drivers respectively, and is used to provide operating voltage to the two first gate drivers;

[0017] One end of resistor R1 is connected to the output terminal of the first DC voltage regulator circuit, and the other end is connected to one end of resistor R2. The other end of resistor R2 is grounded. The VREF terminals of the two first gate drivers are connected between resistor R1 and resistor R2.

[0018] One end of resistors R3 and R4 is connected to the OUTH and OUTL terminals of a first gate driver, respectively, and the other end is connected to the gate of power switch Q2 and the gate of power switch Q3.

[0019] One end of resistors R5 and R6 is connected to the OUTH and OUTL terminals of another first gate driver, respectively, and the other end is connected to the gate of power switch Q1 and the gate of power switch Q4.

[0020] Furthermore, the radio frequency signal generation module includes a radio frequency oscillator and a second DC voltage regulator circuit;

[0021] The radio frequency oscillator includes an oscillation circuit and a current amplification circuit;

[0022] The oscillation circuit includes a comparator COMP, a crystal Y, and a feedback network. The crystal Y is used to generate an oscillation signal. One end of the crystal Y is connected to the positive input terminal of the comparator COMP, and the other end is connected to the first output terminal of the comparator COMP. At the same time, the first output terminal of the comparator COMP is connected to the negative input terminal of the comparator COMP through the feedback network to form a feedback amplifier, which stably amplifies the oscillation signal output by the crystal Y.

[0023] The feedback network includes a resistor R7 and a capacitor C4;

[0024] One end of the resistor R7 is connected to the first output terminal of the comparator COMP, and the other end is connected to one end of the capacitor C4, with the other end of the capacitor C4 grounded; the negative input terminal of the comparator COMP is connected between the resistor R7 and the capacitor C4.

[0025] The input terminal of the current amplifier circuit is connected to the second output terminal of the comparator COMP, and is used to amplify the oscillation signal output by the comparator COMP to form a radio frequency signal. Its output terminal is connected to the IN+ terminal of the two first gate drivers respectively.

[0026] The second DC voltage regulator circuit is used to provide operating voltages to the comparator COMP and the crystal oscillator Y, respectively.

[0027] Furthermore, the full-bridge inverter circuit also includes diodes D1, D2, D3, and D4, capacitor C1, and capacitor C2;

[0028] Diode D1 is connected in reverse parallel across power switch Q1, diode D2 is connected in reverse parallel across power switch Q2, diode D3 is connected in reverse parallel across power switch Q3, and diode D4 is connected in reverse parallel across power switch Q4.

[0029] One end of the capacitor C1 is connected to the connection point of power switch Q1 and power switch Q3, and the other end is connected to the output B terminal of the full-bridge inverter circuit.

[0030] One end of the capacitor C2 is connected to the negative terminal of the diode D2, and the other end is connected to the positive terminal of the diode D4.

[0031] Furthermore, the high voltage generation module is a synchronous rectification BOOST high voltage circuit, including a second gate driver, resistors R7, R8, R9, and R10, a power switch Q5, an inductor L1, a capacitor C3, and a diode D5.

[0032] One end of resistor R7 is connected to the output terminal of the first DC voltage regulator circuit, and the other end is connected to one end of resistor R8, with the other end of resistor R8 grounded.

[0033] The IN+ terminal of the second gate driver is connected to the output terminal of the current amplifier circuit, its VDD terminal is connected to the output terminal of the first DC voltage regulator circuit, and its VREF terminal is connected between resistor R7 and resistor R8.

[0034] One end of resistors R9 and R10 is connected to the OUTH and OUTL terminals of the second gate driver, respectively, and the other end is connected to the gate of power switch Q5.

[0035] The drain of the power switch Q5 is connected to the anode of the diode D5, and is connected to the output terminal of the first DC voltage regulator circuit through the inductor L1. The source of the power switch Q5 is grounded, and the cathode of the diode D5 is connected to the output terminal of the high voltage generation module. One end of the capacitor C3 is connected to the cathode of the diode D5, and the other end is grounded.

[0036] Furthermore, the current amplification circuit includes a capacitor C5, a transistor V, and a bias circuit;

[0037] One end of the capacitor C5 is connected to the second output terminal of the comparator COMP, and the other end is connected to the base of the transistor V.

[0038] The bias circuit includes resistor R11, capacitor C6, resistor R12, resistor R13 and resistor R14;

[0039] One end of the resistor R11 is connected to the emitter of the transistor V, and the other end is grounded. The capacitor C6 is connected in parallel across the resistor R11. One end of the resistor R12 is grounded, and the other end is connected to the base of the transistor V.

[0040] One end of each of the resistors R13 and R14 is connected to the output terminal of the first DC voltage regulator circuit, the other end of the resistor R13 is connected to the base of the transistor V, and the other end of the resistor R14 is connected to the collector of the transistor V.

[0041] The collector of the transistor V is connected to the IN+ terminals of the first gate driver and the IN+ terminal of the second gate driver, respectively.

[0042] Furthermore, the comparator COMP is a high-speed comparator LT1016;

[0043] The first shaping circuit is an integrated circuit 74HC04;

[0044] The transistor V is 2N2222;

[0045] The power switch transistors Q1, Q2, Q3, and Q4 are all GC3M0065090D.

[0046] Diodes D1, D2, D3, and D4 are all SS56.

[0047] The first gate driver and the second gate driver are UCC27611.

[0048] Furthermore, the second DC voltage regulator circuit uses a linear regulator AMS1117 to provide a 5V operating voltage to the comparator COMP and the crystal oscillator Y;

[0049] The first DC voltage regulator circuit uses a SY8401 switching regulator to provide a 12V operating voltage to the first gate driver, the second gate driver, the current amplifier circuit, and the linear regulator AMS1117.

[0050] Furthermore, it also includes a peak voltage monitoring module, a rectified high voltage signal monitoring module, a temperature monitoring module, and a power monitoring module;

[0051] The peak voltage monitoring module includes diode D6, capacitor C7, resistor R15, and RC filter module;

[0052] The positive terminal of diode D6 is connected to the output A or output B terminal of the full-bridge inverter circuit, and the negative terminal is connected to one end of resistor R15. The other end of resistor R15 serves as the output terminal of the peak voltage monitoring module.

[0053] One end of the capacitor C7 is connected between the diode D6 and the resistor R15, and the other end is grounded;

[0054] The RC filter module includes a resistor R16 and a capacitor C8;

[0055] One end of resistor R16 is connected to the other end of resistor R15, and one end of capacitor C8 is connected to one end of resistor R16; the other end of resistor R16 and the other end of capacitor C8 are connected to ground.

[0056] The rectified high-voltage signal monitoring module includes resistors R17 and R18 and capacitor C9; one end of resistor R17 is connected to the output terminal of the high-voltage generation module, one end of resistor R18 is grounded, and the other ends of resistor R17 and R18 are connected, with the connection end serving as the output terminal after voltage division; capacitor C9 is connected in parallel across resistor R18.

[0057] The temperature monitoring module uses a K-type thermocouple to monitor the temperature of each power switching transistor.

[0058] The power monitoring module uses a current sensing amplifier to monitor power.

[0059] The advantages of this invention compared to the prior art are as follows:

[0060] 1. The present invention provides an inductively coupled krypton plasma driving circuit as a calibration source. It uses a silicon carbide-based NMOS transistor to build a full-bridge inverter circuit, and then uses two inverted first gate drivers to control the sequential conduction and cutoff of four power switching transistors to amplify the radio frequency signal, effectively improving circuit switching losses and reducing the heat generation of MOS transistors. At the same time, the inductively coupled krypton plasma driving circuit of the present invention effectively avoids the drift of plasma driving frequency, has good stability, reliability and accuracy, ensures effective excitation of krypton plasma, improves the luminous intensity of plasma, and solves the problem of short lifespan of plasma calibration light sources.

[0061] 2. This invention uses an enhancement-mode gallium nitride field-effect transistor gate driver to drive a silicon carbide-based NMOS transistor, which results in low system transmission delay, ensures rapid pulse rise and fall, and optimizes the ringing phenomenon. Attached Figure Description

[0062] Figure 1 This is a structural block diagram of an embodiment of an inductively coupled krypton plasma driving circuit as a calibration source according to the present invention;

[0063] Figure 2 This is a circuit topology diagram of the radio frequency signal generation module in an embodiment of the present invention;

[0064] Figure 3 This is a circuit topology diagram of the radio frequency amplification module in an embodiment of the present invention;

[0065] Figure 4 This is a circuit topology diagram of the high-voltage generating module in an embodiment of the present invention;

[0066] Figure 5 This is a circuit topology diagram of the peak voltage monitoring module in an embodiment of the present invention;

[0067] Figure 6 This is a circuit topology diagram of the rectified high-voltage signal monitoring module in an embodiment of the present invention;

[0068] Figure 7 This is a circuit topology diagram of the temperature monitoring module in an embodiment of the present invention;

[0069] Figure 8 This is a circuit topology diagram of the power monitoring module in an embodiment of the present invention. Detailed Implementation

[0070] To make the advantages and features of the present invention clearer, the present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments.

[0071] like Figure 1As shown, an inductively coupled krypton plasma driving circuit serving as a calibration source includes an RF signal generation module, an RF amplification module, a high voltage generation module, a first DC voltage regulator circuit, a peak voltage monitoring module, a rectified high voltage signal monitoring module, a temperature monitoring module, and a power monitoring module.

[0072] An RF signal generation module is used to generate RF signals. For example... Figure 2 As shown, the RF signal generation module includes an RF oscillator and a second DC voltage regulator circuit. The RF oscillator includes an oscillation circuit and a current amplifier circuit; the oscillation circuit includes a comparator COMP, a crystal Y, and a feedback network. In this embodiment, the comparator COMP is a high-speed comparator LT1016.

[0073] The second DC voltage regulator circuit includes a regulated power supply, two voltage divider resistors R0, and a capacitor C0. One end of one voltage divider resistor R0 is connected to the regulated power supply, and the other end is connected to the other voltage divider resistor R0. The other end of the other voltage divider resistor R0 is grounded. The positive input terminal of comparator COMP is connected between the two voltage divider resistors R0 to supply power to comparator COMP. Capacitor C0 is connected between the positive input terminal of comparator COMP and ground for filtering. The regulated power supply uses a linear regulator AMS1117 to provide a 5V operating voltage to comparator COMP and crystal oscillator Y.

[0074] Crystal oscillator Y is used to generate an oscillation signal. One end of it is connected to the positive input of comparator COMP, and the other end is connected to the first output of comparator COMP. The first output of comparator COMP is connected to the negative input of comparator COMP through a feedback network to form a feedback amplifier, which stably amplifies the oscillation signal output by crystal oscillator Y. In this embodiment, the feedback network includes resistor R7 and capacitor C4. One end of resistor R7 is connected to the first output of comparator COMP, and the other end is connected to one end of capacitor C4. The other end of capacitor C4 is grounded. The negative input of comparator COMP is connected between resistor R7 and capacitor C4.

[0075] The current amplifier circuit amplifies the oscillation signal output by comparator COMP to form an radio frequency signal. It includes capacitor C5, transistor V, and a bias circuit, which in turn includes resistors R11, C6, R12, R13, and R14. The specific connections are as follows: one end of capacitor C5 is connected to the second output terminal of comparator COMP, and the other end is connected to the base of transistor V; one end of resistor R11 is connected to the emitter of transistor V, and the other end is grounded; capacitor C6 is connected in parallel across resistor R11; one end of resistor R12 is grounded, and the other end is connected to the base of transistor V; one end of resistors R13 and R14 are both connected to the output terminal of the first DC voltage regulator circuit; the other end of resistor R13 is connected to the base of transistor V, and the other end of resistor R14 is connected to the collector of transistor V. In this invention, the comparator of model LT1016 and the crystal oscillator Y form an oscillation circuit to generate a square wave signal with a frequency of 10MHz, which provides a stable radio frequency source for the circuit. Then, the square wave signal is amplified to 12V by a current amplifier circuit composed of a transistor V of model 2N2222.

[0076] like Figure 3 As shown, the RF amplification module is used to amplify RF signals, and it includes a full-bridge inverter circuit and a driver module. The full-bridge inverter circuit includes an upper half-bridge, a lower half-bridge, capacitor C1, and capacitor C2; the upper half-bridge includes power switches Q1 and Q2, diodes D1 and D2, and the lower half-bridge includes power switches Q3 and Q4, diodes D3 and D4. In this invention, power switches Q1, Q2, Q3, and Q4 are all silicon carbide NMOS transistors, and in this embodiment, the model is GC3M0065090D, which can effectively improve circuit switching losses and reduce MOS transistor heat generation.

[0077] The drain of power switch Q1 is connected to the drain of power switch Q2, and the source of power switch Q3 is connected to the source of power switch Q4. The connection between the source of power switch Q1 and the drain of power switch Q3 forms output terminal A. The connection between the source of power switch Q2 and the drain of power switch Q4 forms one end of capacitor C1, and the other end of capacitor C1 forms output terminal B. Output terminals A and B are connected to inductively coupled krypton plasma. Diodes D1, D2, D3, and D4 are connected in reverse parallel across power switch Q1 and Q2, respectively, to allow current to flow through the parallel diodes when the switches are turned off, preventing the diodes from being subjected to reverse voltage surges. One end of capacitor C2 is connected to the cathode of diode D2, and the other end is connected to the anode of diode D4, used to regulate the output voltage of the RF amplifier module. In this embodiment, diodes D1, D2, D3, and D4 are all SS56 diodes.

[0078] The driving module includes two first gate drivers, a first shaping circuit, resistors R1, R2, R3, R4, R5, and R6. Preferably, in this embodiment, the first gate drivers are enhancement-mode gallium nitride field-effect transistor gate drivers. The output terminal of the first DC voltage regulator circuit is connected to the VDD terminal of the two first gate drivers respectively, and is used to provide operating voltage to the two first gate drivers. In this embodiment, the output voltage of the first DC voltage regulator circuit is 12V, and the first gate driver adopts UCC27611.

[0079] One first gate driver's IN+ terminal is connected to the collector of transistor V, and the other first gate driver's IN+ terminal is connected to the collector of transistor V through a first shaping circuit. The IN- terminals of the two first gate drivers are interconnected and grounded. One end of resistor R1 is connected to a first DC voltage regulator circuit, and the other end is connected to one end of resistor R2. The other end of resistor R2 is grounded. The VREF terminals of the two first gate drivers are connected between resistors R1 and R2, used to input the radio frequency signal into the two first gate drivers respectively, convert it into corresponding gate drive signals, and enhance the signal. The first shaping circuit is used to invert the radio frequency signal; in this embodiment, the first shaping circuit uses an integrated circuit 74HC04.

[0080] One end of resistors R3 and R4 is connected to the OTH and OUTL terminals of a first gate driver, respectively, and the other end is connected to the gates of power switches Q2 and Q3. One end of resistors R5 and R6 is connected to the OTH and OUTL terminals of another first gate driver, respectively, and the other end is connected to the gates of power switches Q1 and Q4. That is, one first gate driver is used to control the on and off of power switches Q2 and Q3, and the other first gate driver is used to control the on and off of power switches Q1 and Q4, so that the four power switches are turned on and off in a certain sequence to amplify the radio frequency signal and excite krypton plasma.

[0081] The high-voltage generation module is a synchronous rectification BOOST high-voltage circuit, used to boost the voltage of the radio frequency signal to power the full-bridge inverter circuit, thereby obtaining a higher coil current. For example... Figure 4 As shown, the high-voltage generation module in this embodiment includes a second gate driver, resistors R7, R8, R9, and R10, a power switch Q5, an inductor L1, a capacitor C3, and a diode D5. The specific connections are as follows: one end of resistor R7 is connected to the output terminal of the first DC voltage regulator circuit, and the other end of resistor R7 is connected to one end of resistor R8, with the other end of resistor R8 grounded. The IN+ terminal of the second gate driver is connected to the collector of transistor V, the IN- terminal is grounded, the VDD terminal is connected to the output terminal of the first DC voltage regulator circuit, and the VREF terminal is connected between resistors R7 and R8. One end of resistors R9 and R10 is connected to the OTH and OUTL terminals of the second gate driver, respectively, and the other end is connected to the gate of the power switch Q5. The drain of the power switch Q5 is connected to the anode of diode D5 and is connected to the output terminal of the first DC voltage regulator circuit through inductor L1. The source of the power switch Q5 is grounded, and the cathode of diode D5 is connected to the output terminal of the high-voltage generation module. One end of capacitor C3 is connected to the cathode of diode D5, and the other end is grounded.

[0082] Meanwhile, the cathode of diode D5 is connected to the output terminal of the high-voltage generation module to output voltage V. high The output of the high-voltage generation module is connected to the drains of power switching transistors Q1 and Q2 to supply power to the full-bridge inverter circuit. The second gate driver is a UCC27611, power switching transistor Q5 is a GC3M0065090D, and diode D5 is an SS56. The first DC voltage regulator circuit uses a SY8401 switching regulator to provide a 12V operating voltage to the first gate driver, second gate driver, current amplifier circuit, and linear regulator AMS1117.

[0083] In this invention, the peak voltage monitoring module, rectified high-voltage signal monitoring module, temperature monitoring module, and power monitoring module are all built using existing circuit topologies. For example... Figure 5 As shown, the peak voltage monitoring module is used to monitor the peak value of the output voltage of the full-bridge inverter circuit. It includes diode D6, capacitor C7, resistor R15, and an RC filter module. The anode of diode D6 is connected to either output terminal A or output terminal B of the full-bridge inverter circuit, and its cathode is connected to one end of resistor R15. The other end of resistor R15 serves as the output terminal of the peak voltage monitoring module. One end of capacitor C7 is connected between diode D6 and resistor R15, and the other end is grounded, used to monitor the peak voltage of the radio frequency signal. The RC filter module is used to filter the output radio frequency signal. It includes resistor R16 and capacitor C8. One end of resistor R16 is connected to the other end of resistor R15, and one end of capacitor C8 is connected to one end of resistor R16. The other ends of resistor R16 and capacitor C8 are connected to ground. Figure 6 As shown, the rectified high-voltage signal monitoring module is used to monitor the output voltage of the high-voltage generation module. It includes resistors R17 and R18, and capacitor C9. One end of resistor R17 is connected to the output terminal of the high-voltage generation module, one end of resistor R18 is grounded, and the other ends of resistors R17 and R18 are connected together, forming the output terminal after voltage division. Capacitor C9 is connected in parallel across resistor R18 for filtering. The temperature monitoring module is used to monitor the temperature of each power switch transistor in the RF amplifier module, such as... Figure 7 As shown, it uses a K-type thermocouple to monitor the temperature of each power switch tube. In this embodiment, the weak thermoelectric potential of the K-type thermocouple is amplified by 500 times. Figure 8 As shown, the power monitoring module uses an INA18012 current sensing amplifier to amplify the voltage across the current sampling resistor by 50 times, and then measures and calculates the output current of the high voltage generating module to achieve power monitoring.

[0084] The above description is only used to illustrate the technical solutions of the present invention, and is not intended to limit them. For those skilled in the art, modifications can be made to the specific technical solutions described in the above embodiments, or equivalent substitutions can be made to some of the technical features. However, these modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions protected by the present invention.

Claims

1. An inductively coupled krypton plasma driving circuit as a calibration source, characterized in that: It includes an RF signal generation module, an RF amplification module, and a high voltage generation module; The radio frequency signal generating module is used to generate radio frequency signals; The radio frequency amplification module includes a full-bridge inverter circuit and a drive module; The full-bridge inverter circuit includes an upper half-bridge and a lower half-bridge; the upper half-bridge includes power switch Q1 and power switch Q2, and the lower half-bridge includes power switch Q3 and power switch Q4. The power switches Q1, Q2, Q3, and Q4 are all silicon carbide-based NMOS transistors. The drain of power switch Q1 is connected to the drain of power switch Q2, and the source of power switch Q3 is connected to the source of power switch Q4. The connection between the source of power switch Q1 and the drain of power switch Q3 serves as output terminal A, and the connection between the source of power switch Q2 and the drain of power switch Q4 serves as output terminal B. The input terminal of the high voltage generating module is connected to the output terminal of the radio frequency signal generating module, and its output terminal is connected to the drain of power switch Q1 and the drain of power switch Q2, which is used to increase the voltage of the radio frequency signal to supply power to the full-bridge inverter circuit. The driving module includes two first gate drivers and a first shaping circuit; the IN+ terminal of one first gate driver is connected to the output terminal of the radio frequency signal generation module, and is used to directly input the radio frequency signal into the corresponding first gate driver for conversion and amplification; the IN+ terminal of the other first gate driver is connected to the output terminal of the radio frequency signal generation module through the first shaping circuit, and is used to invert the radio frequency signal and input it into the corresponding first gate driver for conversion and amplification. The IN- terminals of the two first gate drivers are connected to each other and grounded; The gates of power switch Q2 and power switch Q3 are respectively connected to the two output terminals of a first gate driver, and the gates of power switch Q1 and power switch Q4 are respectively connected to the two output terminals of another first gate driver. This is used to control the sequential turn-on and turn-off of the four power switches according to the enhanced signals output by the two first gate drivers, so as to amplify the radio frequency signal and excite krypton plasma.

2. The inductively coupled krypton plasma driving circuit as a calibration source according to claim 1, characterized in that: The first gate driver is an enhancement-mode gallium nitride field-effect transistor gate driver.

3. The inductively coupled krypton plasma driving circuit as a calibration source according to claim 2, characterized in that: It also includes a first DC voltage regulator circuit; The drive module also includes resistors R1, R2, R3, R4, R5, and R6; The output terminal of the first DC voltage regulator circuit is connected to the VDD terminal of the two first gate drivers respectively, and is used to provide operating voltage to the two first gate drivers; One end of resistor R1 is connected to the output terminal of the first DC voltage regulator circuit, and the other end is connected to one end of resistor R2. The other end of resistor R2 is grounded. The VREF terminals of the two first gate drivers are connected between resistor R1 and resistor R2. One end of the resistor R3 and the resistor R4 is connected with the OUTH end and the OUTL end of a first gate driver respectively, and the other end is connected with the gate of the power switch tube Q2 and the gate of the power switch tube Q3; One end of the resistor R5 and the resistor R6 is connected with the OUTH end and the OUTL end of another first gate driver respectively, and the other end is connected with the gate of the power switch tube Q1 and the gate of the power switch tube Q4. 4.The inductively coupled krypton plasma driving circuit as a calibration source according to claim 3, characterized in that: The radio frequency signal generating module comprises a radio frequency oscillator and a second direct current stabilizing circuit; The radio frequency oscillator comprises an oscillation circuit and a current amplification circuit; The oscillation circuit comprises a comparator COMP, a crystal oscillator Y, and a feedback network; one end of the crystal oscillator Y is connected with the positive input end of the comparator COMP, and the other end is connected with the first output end of the comparator COMP; the first output end of the comparator COMP is connected with the negative input end of the comparator COMP through the feedback network, so as to form a feedback amplifier and stably amplify the oscillation signal output by the crystal oscillator Y; The feedback network comprises a resistor R7 and a capacitor C4; One end of the resistor R7 is connected with the first output end of the comparator COMP, and the other end is connected with one end of the capacitor C4, and the other end of the capacitor C4 is grounded; the negative input end of the comparator COMP is connected between the resistor R7 and the capacitor C4; The input end of the current amplification circuit is connected with the second output end of the comparator COMP, so as to amplify the oscillation signal output by the comparator COMP in current and form a radio frequency signal, and the output end is connected with the IN+ end of two first gate drivers respectively; The second direct current stabilizing circuit is used for providing working voltage for the comparator COMP and the crystal oscillator Y respectively. 5.The inductively coupled krypton plasma driving circuit as a calibration source according to claim 4, characterized in that: The full-bridge inverter circuit further comprises a diode D1, a diode D2, a diode D3, a diode D4, a capacitor C1, and a capacitor C2; The diode D1 is connected reversely in parallel between the power switch tube Q1, the diode D2 is connected reversely in parallel between the power switch tube Q2, the diode D3 is connected reversely in parallel between the power switch tube Q3, and the diode D4 is connected reversely in parallel between the power switch tube Q4; One end of the capacitor C1 is connected with the connection point of the power switch tube Q1 and the power switch tube Q3, and the other end is connected with the output B of the full-bridge inverter circuit; One end of the capacitor C2 is connected with the negative electrode of the diode D2, and the other end is connected with the positive electrode of the diode D4. 6.The inductively coupled krypton plasma driving circuit as a calibration source according to claim 5, characterized in that: The high-voltage generating module is a synchronous rectification BOOST high-voltage circuit, comprising a second gate driver, a resistor R7, a resistor R8, a resistor R9, a resistor R10, a power switch tube Q5, an inductor L1, a capacitor C3, and a diode D5; One end of the resistor R7 is connected with the output end of the first direct current stabilizing circuit, and the other end is connected with one end of the resistor R8, and the other end of the resistor R8 is grounded; The IN+ end of the second gate driver is connected to the output end of the current amplification circuit, the VDD end is connected to the output end of the first direct current stabilizing circuit, and the VREF end is connected between the resistor R7 and the resistor R8; One end of the resistor R9 and the resistor R10 is respectively connected to the OUTH end and the OUTL end of the second gate driver, and the other end is connected to the gate of the power switch tube Q5 after being connected; The drain of the power switch tube Q5 and the anode of the diode D5 are connected, and are connected to the output end of the first direct current stabilizing circuit through the inductor L1; the source of the power switch tube Q5 is grounded, and the cathode of the diode D5 is connected to the output end of the high-voltage generating module; one end of the capacitor C3 is connected to the cathode of the diode D5, and the other end is grounded.

7. The inductively coupled krypton plasma driving circuit as a calibration source according to claim 6, wherein: The current amplification circuit comprises a capacitor C5, a triode V, and a bias circuit; One end of the capacitor C5 is connected to the second output end of the comparator COMP, and the other end is connected to the base of the triode V; The bias circuit comprises a resistor R11, a capacitor C6, a resistor R12, a resistor R13, and a resistor R14; One end of the resistor R11 is connected to the emitter of the triode V, and the other end is grounded; the capacitor C6 is connected in parallel across the resistor R11; one end of the resistor R12 is grounded, and the other end is connected to the base of the triode V; One end of the resistor R13 and the resistor R14 is connected to the output end of the first direct current stabilizing circuit; the other end of the resistor R13 is connected to the base of the triode V, and the other end of the resistor R14 is connected to the collector of the triode V; The collector of the triode V is connected to the IN+ end of the two first gate drivers and the IN+ end of the second gate driver.

8. The inductively coupled krypton plasma driving circuit as a calibration source according to claim 7, wherein: The comparator COMP is a high-speed comparator LT1016; The first shaping circuit is an integrated circuit 74HC04; The triode V is a 2N2222; The power switch tubes Q1, Q2, Q3, and Q4 are all GC3M0065090D; The diodes D1, D2, D3, and D4 are all SS56; The first gate driver and the second gate driver are UCC27611.

9. The inductively coupled krypton plasma driving circuit as a calibration source according to claim 8, wherein: The second direct current stabilizing circuit uses a linear stabilizer AMS1117 to provide a 5V working voltage for the comparator COMP and the crystal oscillator Y; The first direct current stabilizing circuit uses a SY8401 switching stabilizer to provide a 12V working voltage for the first gate driver, the second gate driver, the current amplification circuit, and the linear stabilizer AMS1117.

10. The inductively coupled krypton plasma driving circuit as a calibration source according to any one of claims 1-9, wherein: It further comprises a peak voltage monitoring module, a rectified high-voltage signal monitoring module, a temperature monitoring module, and a power monitoring module. The peak voltage monitoring module comprises a diode D6, a capacitor C7, a resistor R15 and an RC filter module; The positive electrode of the diode D6 is connected to the output A end or the output B end of the full-bridge inverter circuit, and the negative electrode is connected to one end of the resistor R15, and the other end of the resistor R15 is used as an output end of the peak voltage monitoring module; One end of the capacitor C7 is connected between the diode D6 and the resistor R15, and the other end is grounded; The RC filter module comprises a resistor R16 and a capacitor C8; One end of the resistor R16 is connected to the other end of the resistor R15, and one end of the capacitor C8 is connected to one end of the resistor R16; the other end of the resistor R16 and the other end of the capacitor C8 are connected and then grounded; The rectified high-voltage signal monitoring module comprises a resistor R17, a resistor R18 and a capacitor C9; one end of the resistor R17 is connected to the output end of the high-voltage generating module, one end of the resistor R18 is grounded, the other end of the resistor R17 and the other end of the resistor R18 are connected, and the connected end is used as a divided output end; the capacitor C9 is connected in parallel across the resistor R18; The temperature monitoring module realizes temperature monitoring of each power switch tube through a K-type thermocouple; The power monitoring module realizes power monitoring by using a current detection amplifier.

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