Heating and refrigerating chip and manufacturing method thereof
Through the design of the working unit connected to the end and the processing of the thermoelectric material layer by interlaced head and tail, the existing heating and refrigeration chips have been solved, and the miniaturization and efficient temperature control have been achieved, which is suitable for a variety of application scenarios.
Patent Information
- Application Number
- CN202411913144.6
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-12-24
- Publication Date
- 2025-03-25
AI Technical Summary
The existing heating and refrigeration chips are large in size and are difficult to apply to scenarios such as miniaturization equipment or biological monitoring, and the temperature control is slow.
The first working unit and the second working unit are designed with interlaced heads and tails. Through the electrical connection between the first thermoelectric layer and the second thermoelectric layer, efficient heat transfer and electrical connection performance are achieved, and the thermoelectric material layer is processed on the substrate through a semiconductor process to reduce the module size.
The volume of the heating and refrigeration chip is reduced to the millimeter level, which improves the speed and efficiency of temperature control, is suitable for more application scenarios, and at the same time reduces manufacturing difficulty and production costs.
Smart Images
Figure CN119698220A_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to the technical field of circuit boards, and in particular to a heating and cooling chip and a method for manufacturing the heating and cooling chip. Background Art
[0002] Heating and cooling chips, also known as TEC (Thermo Electric Cooler, semiconductor cooling) chips, are a type of cooling element that works based on the thermoelectric effect. They are often used in situations that require precise temperature control or miniaturized cooling, and are widely used in home appliances (such as pure water devices) and scientific research equipment (such as constant temperature amplification instruments). In these applications, heating and cooling chips can provide stable and reliable cooling effects to ensure the normal operation and stable performance of the equipment.
[0003] At present, the preparation of heating and cooling chips is to cut and mechanically assemble thermoelectric materials, and then splice the thermoelectric materials and ceramic sheets with conductive layers. This makes the overall size of the heating and cooling chips larger (more than centimeters). Due to the lack of corresponding millimeter-level devices, it is difficult to apply them to miniaturized equipment applications (such as mobile phone heat dissipation) or biological monitoring scenarios. In addition, the temperature control of large heating and cooling chips is slower, while the temperature control of small heating and cooling chips is faster. Summary of the invention
[0004] The purpose of the present invention is to provide a heating and cooling chip and a method for manufacturing the heating and cooling chip, so as to provide a heating and cooling chip with a volume of millimeters, improve the temperature control capability of the heating and cooling chip, and expand the application scenarios.
[0005] To achieve this object, the present invention adopts the following technical solutions:
[0006] A heating and cooling chip comprises a first module and a second module; the first module comprises a first substrate, the first substrate has a first working surface, the first working surface is provided with a plurality of first working units, the first working units have a first mounting end and a first connecting end relative to each other; the second module comprises a second substrate, the second substrate has a second working surface, the second working surface is provided with a second working unit and two wire bonding pads, the number of the second working units is the same as that of the first working units and they correspond one to one, the second working units have a second mounting end and a second connecting end relative to each other; the first working surface is arranged opposite to the second working surface, the first mounting end is fixedly connected to a first thermoelectric layer, each of the first thermoelectric layers is electrically connected to one of the second connecting ends, the second mounting end is fixedly connected to a second thermoelectric layer, each of the second thermoelectric layers is electrically connected to one of the first connecting ends, so that all of the first working units are staggered and connected end to end with all of the second working units, wherein the first working units and the second working units at the two ends are electrically connected to the two wire bonding pads respectively.
[0007] As an optional technical solution for the heating and cooling chip, all the first working units and all the second working units connected end to end are evenly distributed in a manner of alternating positive and negative U-shapes.
[0008] As an optional technical solution for the heating and cooling chip, all of the first working units are arranged into a first matrix with M rows and N columns, the length direction of the first working units is parallel to the column direction of the first matrix, the positions of the first mounting ends and the first connecting ends of two adjacent first working units in the row direction of the first matrix are opposite, and the positions of the first mounting ends and the first connecting ends of two adjacent first working units in the column direction of the first matrix are the same; all of the second working units are divided into a first zone, a second zone, a third zone and a fourth zone, and all of the second working units in the second zone are arranged into a second matrix with M-1 rows and N columns, the length direction of all of the second working units in the second zone is parallel to the column direction of the second matrix, and the second mounting ends of two adjacent second working units in the row direction of the second matrix are opposite. Contrary to the position of the second connecting end, the positions of the second mounting ends and the second connecting ends of two adjacent second working units in the column direction of the second matrix are the same. The first area and the third area are respectively provided on both sides in the column direction of the second matrix. The first area includes K second working units evenly spaced along the row direction of the second matrix, and the length directions of all the second working units in the first area are parallel to the row direction of the second matrix. The third area includes K-1 second working units evenly spaced along the row direction of the second matrix, and the length directions of all the second working units in the third area are parallel to the row direction of the second matrix. The fourth area includes one second working unit, and the fourth area is located on one side of the third area in the row direction of the second matrix; wherein M is a positive integer, N is an even number, and K=N / 2.
[0009] As an optional technical solution for the heating and cooling chip, among all the first working units and all the second working units that are staggered end to end, the first working unit located at the end is electrically connected to one of the bonding pads through the first thermoelectric layer, and the second working unit located at the end is integrally formed with another of the bonding pads.
[0010] A method for manufacturing a heating and cooling chip is used to manufacture the above-mentioned heating and cooling chip, and the heating and cooling chip manufacturing method comprises the following steps:
[0011] S10: providing a processing substrate, and dividing all the processing substrates into the first substrate and the second substrate;
[0012] S20: Select the first working surface on the first substrate, select the second working surface on the second substrate, and accordingly form a plurality of conductive layers at corresponding positions on each of the first working surface and each of the second working surfaces, and process two wire bonding pads on each of the second working surfaces;
[0013] S30: forming a thermoelectric adhesion layer on each of the conductive layers;
[0014] S40: defining a avoidance region on each of the thermoelectric adhesion layers, and forming an etching auxiliary layer on a portion of each of the thermoelectric adhesion layers except the avoidance region;
[0015] S50: forming a thermoelectric layer at each of the avoidance regions using a thermoelectric material, and the thermoelectric material formed outside the avoidance regions adheres to the etching auxiliary layer;
[0016] S60: removing the etching auxiliary layer by an etching process, and taking away a portion of the thermoelectric layer adhering to the etching auxiliary layer;
[0017] S70: bonding the first working surface on the first substrate and the second working surface on the second substrate face to face to form the heating and cooling chip.
[0018] As an optional technical solution for the heating and cooling chip manufacturing method, the thermoelectric adhesion layer includes titanium and / or nickel; the etching auxiliary layer is patterned silicon dioxide with gold sputtered on the surface; or, the etching auxiliary layer is patterned silicon dioxide with platinum sputtered on the surface.
[0019] As an optional technical solution of the method for manufacturing a heating and cooling chip, the thermoelectric material is formed in the avoidance area by co-sputtering of at least two materials.
[0020] As an optional technical solution for the method for manufacturing a heating and cooling chip, the thermoelectric material includes bismuth telluride and lead telluride.
[0021] As an optional technical solution for the method for manufacturing a heating and cooling chip, the conductive layer is made of gold or platinum.
[0022] As an optional technical solution for the method of manufacturing the heating and cooling chip, the processing method of the thermoelectric material is selected from any one of acid solution corrosion, dry etching and laser cutting.
[0023] Beneficial effects of the present invention:
[0024] The heating and cooling chip realizes the effective connection between the first module and the second module through the staggered end-to-end connection of all the first working units and all the second working units, so that the heating and cooling chip has efficient heat transfer and electrical connection performance. Combined with the design of electrical connection between the first thermoelectric layer and the second thermoelectric layer, the electrical connection and heat transfer between the corresponding first working unit and the second working unit are realized, ensuring the effective conversion and utilization of the internal energy of the heating and cooling chip, ensuring the efficiency and reliability of the work, and making the heating and cooling chip have excellent cooling and heating effects. Moreover, the design of the first module and the second module being separately arranged and corresponding to each other can use semiconductor technology to process the thermoelectric material layer and the corresponding structure on the substrate, thereby reducing the size of the first module and the second module, helping to reduce the volume of the heating and cooling chip to the millimeter level, facilitating the integrated optimization of the heating and cooling chip, accelerating the speed of temperature control, and realizing the efficient operation of the heating and cooling chip. At the same time, the separate design of the first module and the second module also reduces the manufacturing difficulty of the heating and cooling chip and reduces the production cost.
[0025] The manufacturing method of the heating and cooling chip is made using a semiconductor process, which divides the processed substrate into a first substrate and a second substrate, and forms a conductive layer, a thermoelectric adhesion layer, an etching auxiliary layer and a thermoelectric layer at the corresponding positions of the working surface thereof, and removes the excess part through an etching process, and finally bonds to form a heating and cooling chip. With the help of the setting of the etching auxiliary layer, it is possible to ensure that the etching pattern is consistent with the target structure. The above efficient and controllable manufacturing process can accurately process the required components to the specified position, improve the efficiency of the manufacturing process and the quality of the heating and cooling chip, effectively ensure the consistency and accuracy of the heating and cooling chip manufacturing, reduce the manufacturing cost, and make the heating and cooling chip structure more accurate and reliable. The above method is highly repeatable and reliable, and is suitable for large-scale production. BRIEF DESCRIPTION OF THE DRAWINGS
[0026] Figure 1 is a schematic diagram of the structure of a heating and cooling chip provided in an embodiment of the present invention;
[0027] Figure 2 is a structural diagram of a first module provided by an embodiment of the present invention;
[0028] Figure 3 is a structural diagram of a second module provided by an embodiment of the present invention;
[0029] Figure 4 is a front view of a second module provided by an embodiment of the present invention;
[0030] Figure 5 is a schematic diagram of the connection relationship between the first module and the second module provided in an embodiment of the present invention;
[0031] Figure 6It is a partial cross-sectional view of a heating and cooling chip provided in an embodiment of the present invention.
[0032] In the figure:
[0033] 100, first module; 110, first substrate; 120, first working unit; 121, first conductive layer; 122, first thermoelectric adhesion layer; 123, first etching auxiliary layer; 130, first thermoelectric layer;
[0034] 200, second module; 201, first area; 202, second area; 203, third area; 204, fourth area; 210, second substrate; 220, second working unit; 221, second conductive layer; 222, second thermoelectric adhesion layer; 223, second etching auxiliary layer; 230, second thermoelectric layer; 240, wire bonding pad. DETAILED DESCRIPTION
[0035] The technical solution of the present invention will be described clearly and completely below in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.
[0036] In the description of the present invention, it should be noted that the orientations or positional relationships indicated by the terms "center", "up", "down", "left", "right", "vertical", "horizontal", "inside", "outside", etc. are based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as limiting the present invention. In addition, the terms "first" and "second" are only used for descriptive purposes and cannot be understood as indicating or implying relative importance. Among them, the terms "first position" and "second position" are two different positions, and the first feature "above", "above" and "above" the second feature include the first feature being directly above and obliquely above the second feature, or simply indicates that the first feature is higher in level than the second feature. The first feature "below", "below" and "below" the second feature include the first feature being directly below and obliquely below the second feature, or simply indicates that the first feature is lower in level than the second feature.
[0037] In the description of the present invention, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.
[0038] Embodiments of the present invention are described in detail below, examples of which are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present invention, and cannot be understood as limiting the present invention.
[0039] like Figures 1 to 5 As shown, this embodiment provides a heating and cooling chip, including a first module 100 and a second module 200; the first module 100 includes a first substrate 110, the first substrate 110 has a first working surface, the first working surface is provided with a plurality of first working units 120, the first working units 120 have opposite first mounting ends and first connecting ends; the second module 200 includes a second substrate 210, the second substrate 210 has a second working surface, the second working surface is provided with second working units 220 and two wire bonding pads 240, the number of the second working units 220 is the same as that of the first working units 120 and they are one-to-one The second working unit 220 has a second mounting end and a second connecting end relative to each other; the first working surface is arranged opposite to the second working surface, the first mounting end is fixedly connected to the first thermoelectric layer 130, each first thermoelectric layer 130 is electrically connected to a second connecting end, the second mounting end is fixedly connected to the second thermoelectric layer 230, each second thermoelectric layer 230 is electrically connected to a first connecting end, so that all the first working units 120 and all the second working units 220 are staggered end to end and connected, wherein the first working units 120 and the second working units 220 located at the two ends are electrically connected to two wire bonding pads 240 respectively.
[0040] The heating and cooling chip realizes the effective connection between the first module 100 and the second module 200 by staggered end-to-end connection of all the first working units 120 and all the second working units 220, so that the heating and cooling chip has efficient heat transfer and electrical connection performance. Combined with the design of electrical connection between the first thermoelectric layer 130 and the second thermoelectric layer 230, the electrical connection and heat transfer between the corresponding first working unit 120 and the second working unit 220 are realized, ensuring the effective conversion and utilization of the internal energy of the heating and cooling chip, ensuring the efficiency and reliability of the work, so that the heating and cooling chip has excellent cooling and heating effects. Moreover, the design of the first module 100 and the second module 200 being separately arranged and corresponding to each other can use semiconductor technology to process the thermoelectric material layer and the corresponding structure on the substrate, so as to reduce the size of the first module 100 and the second module 200, which helps to reduce the volume of the heating and cooling chip to the millimeter level, facilitates the integrated optimization of the heating and cooling chip, speeds up the temperature control speed, and realizes the efficient operation of the heating and cooling chip. At the same time, the split design of the first module 100 and the second module 200 also reduces the difficulty of manufacturing the heating and cooling chip and reduces the production cost.
[0041] This embodiment is made by using the Peltier effect of thermoelectric materials. The Peltier effect refers to the phenomenon that when a direct current passes through a thermoelectric couple composed of two semiconductor materials, one end of the thermoelectric couple absorbs heat and the other end releases heat.
[0042] In this embodiment, two bonding pads 240 are used to connect two connection cables respectively, and the heating and cooling chip is electrically connected to the external device through the two connection cables. The design of bonding pad 240 facilitates the electrical connection between the external device and the heating and cooling chip, which helps to improve the convenience of use of the heating and cooling chip.
[0043] In this embodiment, all the first working units 120 and all the second working units 220 connected end to end are evenly distributed in a positive and negative U-shaped continuous alternation manner.
[0044] By means of continuous alternation of positive and negative U-shapes, the first working units 120 and the second working units 220 connected end to end are evenly distributed and staggered, so that the heating and cooling chip can achieve more uniform heat flow distribution and electrical signal transmission when working, thereby improving the conversion speed and utilization efficiency of the internal energy of the heating and cooling chip, while enhancing the speed and stability of the operation of the heating and cooling chip, optimizing the internal workflow of the heating and cooling chip, effectively improving the utilization rate of the internal space of the heating and cooling chip, reducing the loss of energy transfer, and improving the overall thermal management efficiency.
[0045] Further, all the first working units 120 are arranged into a first matrix with M rows and N columns, the length direction of the first working units 120 is parallel to the column direction of the first matrix, the positions of the first mounting ends and the first connecting ends of two adjacent first working units 120 in the row direction of the first matrix are opposite, and the positions of the first mounting ends and the first connecting ends of two adjacent first working units 120 in the column direction of the first matrix are the same; all the second working units 220 are divided into a first area 201, a second area 202, a third area 203 and a fourth area 204, and all the second working units 220 in the second area 202 are arranged into a second matrix with M-1 rows and N columns, the length direction of all the second working units 220 in the second area 202 is parallel to the column direction of the second matrix, and the second mounting ends and the first connecting ends of two adjacent second working units 220 in the row direction of the second matrix are opposite. The positions of the connecting ends are opposite, the positions of the second mounting ends and the second connecting ends of two adjacent second working units 220 in the column direction of the second matrix are the same, and the first area 201 and the third area 203 are respectively provided on both sides in the column direction of the second matrix, the first area 201 includes K second working units 220 evenly spaced along the row direction of the second matrix, and the length direction of all the second working units 220 in the first area 201 is parallel to the row direction of the second matrix, the third area 203 includes K-1 second working units 220 evenly spaced along the row direction of the second matrix, and the length direction of all the second working units 220 in the third area 203 is parallel to the row direction of the second matrix, and the fourth area 204 includes one second working unit 220, and the fourth area 204 is located on one side of the third area 203 in the row direction of the second matrix; wherein, M is a positive integer, N is an even number, and K=N / 2.
[0046] The first working units 120 are arranged in a first matrix form of M rows and N columns, so that the heating and cooling chip has a higher degree of integration and a smaller volume. At the same time, the installation ends and connection ends of adjacent working units are in opposite positions, which is conducive to achieving uniform heat transmission and balanced current distribution, and improving the performance and reliability of the heating and cooling chip. The partitioned arrangement of the second working units 220 optimizes the working path inside the heating and cooling chip, makes the heating and cooling chip more reasonable in structure, enhances the reliability and stability of the heating and cooling chip, optimizes the heat management inside the heating and cooling chip, improves the utilization rate of heat, reduces the obstacles to heat transfer, improves the speed and effect of cooling and heating, and is conducive to achieving heat control and electrical signal transmission between different regions. Moreover, by carefully planning the arrangement of the first working unit 120 and the second working unit 220 in the heating and cooling chip, it is ensured that the heating and cooling chip can convert and transfer heat more efficiently during the working process, improves the work efficiency, and makes the heating and cooling chip have a higher structural compactness and space utilization, which is convenient for manufacturing and maintenance.
[0047] After perspective, the internal connection relationship of the heating and cooling chip is as follows Figure 5 As shown, the line types of the first module 100 and the second module 200 are different, and the direction of the circuit connection is shown as the route in the figure.
[0048] Continue to refer Figures 1 to 5 In this embodiment, among all the first working units 120 and all the second working units 220 that are staggered end to end, the first working unit 120 located at the end is electrically connected to a bonding pad 240 through the first thermoelectric layer 130, and the second working unit 220 located at the end is integrally formed with another bonding pad 240.
[0049] By optimizing the connection method between the first working unit 120 and the second working unit 220 at the end and the wire pad 240, more efficient current input and output are achieved, the electrical performance of the heating and cooling chip is improved, and excellent cooling and heating effects are achieved. The above design reduces the resistance of the heating and cooling chip during use, improves the flow efficiency of the current, thereby enhancing the structural strength and heat dissipation performance of the heating and cooling chip, improving the stability and reliability of the electrical connection, and further improving the working efficiency and reliability of the heating and cooling chip. This helps to improve the integration of the heating and cooling chip during manufacturing and use, achieve a reduction in the volume of the heating and cooling chip, and facilitate the lightweight and miniaturization of the product.
[0050] like Figures 1 to 6 As shown, this embodiment also provides a heating and cooling chip manufacturing method for manufacturing the above-mentioned heating and cooling chip, and the heating and cooling chip manufacturing method includes the following steps:
[0051] Step 1: providing a processing substrate, and dividing all the processing substrates into a first substrate 110 and a second substrate 210 .
[0052] Step 2: Select the first working surface on the first substrate 110, select the second working surface on the second substrate 210, and accordingly form a number of conductive layers at corresponding positions on each first working surface and each second working surface, and process two bonding pads 240 on each second working surface.
[0053] Step 3: forming a thermoelectric adhesive layer on each conductive layer.
[0054] Step 4: defining an avoidance region on each thermoelectric adhesion layer, and forming an etching auxiliary layer on a portion of each thermoelectric adhesion layer except the avoidance region.
[0055] Step 5: A thermoelectric layer is formed in each avoidance area using a thermoelectric material, and the thermoelectric material formed outside the avoidance area adheres to the etching auxiliary layer.
[0056] Step 6: Use an etching process to remove the etching auxiliary layer and take away part of the thermoelectric layer adhering to the etching auxiliary layer.
[0057] Step seven: bond the first working surface on the first substrate 110 and the second working surface on the second substrate 210 face to face to form a heating and cooling chip.
[0058] The manufacturing method of the heating and cooling chip is made using a semiconductor process, which divides the processed substrate into a first substrate 110 and a second substrate 210, and forms a conductive layer, a thermoelectric adhesion layer, an etching auxiliary layer and a thermoelectric layer at the corresponding positions of the working surface thereof, and removes the excess part through an etching process, and finally bonds to form a heating and cooling chip. With the help of the setting of the etching auxiliary layer, it is possible to ensure that the etching pattern is consistent with the target structure. The above efficient and controllable manufacturing process can accurately process the required components to the specified position, improve the efficiency of the manufacturing process and the quality of the heating and cooling chip, effectively ensure the consistency and accuracy of the heating and cooling chip manufacturing, reduce the manufacturing cost, and make the heating and cooling chip structure more accurate and reliable. The above method has a high degree of repeatability and reliability, and is suitable for large-scale production.
[0059] Specifically, the first substrate 110 and the second substrate 210 are both made of silicon.
[0060] Since the crystal particles formed by thermoelectric materials are large, cracks are prone to occur during semiconductor processing, and the wet etching solution erodes along the crack direction, causing the etched pattern to be distorted. By setting an etching auxiliary layer, the etching pattern can be guaranteed to be consistent with the target structure. Since the gold and platinum in the etching auxiliary layer have poor adhesion to silicon dioxide, the gold or platinum area with silicon dioxide is prone to fall off, and at the same time, it can take away part of the thermoelectric layer adhering to it.
[0061] In this embodiment, the thermoelectric adhesion layer includes titanium and / or nickel; the etching auxiliary layer is patterned silicon dioxide with gold sputtered on the surface or the etching auxiliary layer is patterned silicon dioxide with platinum sputtered on the surface.
[0062] The use of titanium and / or nickel as the thermoelectric adhesion layer ensures that the thermoelectric material will not fall off the thermoelectric adhesion layer, improves the adhesion between the thermoelectric material and the substrate, ensures that the thermoelectric material will not produce electromigration during operation, and enhances the working stability of the heating and cooling chip. The selection of patterned silicon dioxide with gold or platinum sputtered on the surface as the etching auxiliary layer enables the precise removal of excess thermoelectric layers during the etching process, thereby improving the controllability and manufacturing accuracy of the manufacturing process. The selection of the above materials improves the adhesion of the thermoelectric material and the stability of the etching process, is conducive to enhancing the adhesion ability and electrical connection performance of the thermoelectric material, and improves the manufacturing efficiency and chip quality.
[0063] Among them, gold and platinum can be used as seed layers to prevent cracks in thermoelectric materials after sputtering.
[0064] Moreover, the gold and platinum in the etching auxiliary layer have poor adhesion to silicon dioxide. In the avoidance area, due to the material characteristics of the thermoelectric adhesion layer, there is no adhesion problem between the thermoelectric layer and the thermoelectric adhesion layer, and no detachment will occur during etching; while in the part other than the avoidance area, the gold and platinum in the etching auxiliary layer are easy to fall off from the silicon dioxide during etching, thereby taking away part of the thermoelectric layer adhered to the etching auxiliary layer.
[0065] In this embodiment, the etching auxiliary layer may be a composite layer of silicon dioxide, silicon dioxide alloy or platinum.
[0066] Exemplarily, the thermoelectric material is formed at the avoidance region by co-sputtering at least two materials.
[0067] Thermoelectric materials are formed in the avoidance area by co-sputtering. This method can improve the uniformity and performance of the material, making the material have better thermoelectric conversion efficiency and stability, thereby improving the efficiency of heating and cooling. By adjusting the composition of the thermoelectric material, it can adapt to different application scenarios, thereby improving the adaptability and flexibility of the heating and cooling chip.
[0068] In this embodiment, the thermoelectric material includes bismuth telluride and lead telluride.
[0069] A combination of bismuth telluride and lead telluride is used as thermoelectric materials. These materials have excellent thermoelectric properties, which enable the heating and cooling chips to have efficient thermoelectric conversion capabilities, improve the efficiency and quality of heating and cooling, and achieve fast and stable heating and cooling effects.
[0070] Exemplarily, the conductive layer is made of gold or platinum.
[0071] The conductive layer made of gold or platinum has excellent conductivity and chemical stability, which can ensure the stability and reliability of current transmission of the heating and cooling chip during operation, and help extend the service life of the heating and cooling chip.
[0072] In this embodiment, the processing method of the thermoelectric material is selected from any one of acid solution etching, dry etching and laser cutting.
[0073] The selection of multiple thermoelectric material processing methods makes the manufacturing process more flexible, and it is possible to select appropriate processing methods according to actual needs to adapt to different production needs. The above solutions are characterized by high precision and high efficiency, which can ensure the precise processing of thermoelectric materials and help improve manufacturing efficiency and product quality.
[0074] In this embodiment, the conductive layer provided on the first substrate 110 is the first conductive layer 121, the thermoelectric adhesion layer provided on the first conductive layer 121 is the first thermoelectric adhesion layer 122, and the etching auxiliary layer provided on the first thermoelectric adhesion layer 122 is the first etching auxiliary layer 123. The first working unit 120 includes the first conductive layer 121 and the first thermoelectric adhesion layer 122 stacked in sequence in a direction away from the first working surface. The thermoelectric layer provided on the first substrate 110 is the above-mentioned first thermoelectric layer 130, and the first thermoelectric layer 130 passes through the first etching auxiliary layer 123 and is connected to the first thermoelectric adhesion layer 122. The conductive layer provided on the second substrate 210 is the second conductive layer 221, the thermoelectric adhesion layer provided on the second conductive layer 221 is the second thermoelectric adhesion layer 222, and the etching auxiliary layer provided on the second thermoelectric adhesion layer 222 is the second etching auxiliary layer 223. The second working unit 220 includes the second conductive layer 221 and the second thermoelectric adhesion layer 222 stacked in sequence in a direction away from the second working surface. The thermoelectric layer disposed on the second substrate 210 is the second thermoelectric layer 230 mentioned above. The second thermoelectric layer 230 passes through the second etching auxiliary layer 223 and is connected to the second thermoelectric adhesion layer 222 .
[0075] Obviously, the above embodiments of the present invention are merely examples for clearly illustrating the present invention, and are not intended to limit the embodiments of the present invention. For those skilled in the art, other different forms of changes or modifications can be made based on the above description. It is not necessary and impossible to list all the embodiments here. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present invention should be included in the protection scope of the claims of the present invention.
Claims
1. A heating and cooling chip, characterized in that: include: A first module (100) comprises a first substrate (110), wherein the first substrate (110) has a first working surface, the first working surface is provided with a plurality of first working units (120), and the first working units (120) have opposite first mounting ends and first connecting ends; The second module (200) comprises a second substrate (210), wherein the second substrate (210) has a second working surface, the second working surface is provided with second working units (220) and two wire bonding pads (240), the number of the second working units (220) is the same as that of the first working units (120) and they correspond one to one, and the second working units (220) have opposite second mounting ends and second connecting ends; the first working surface is arranged opposite to the second working surface, the first mounting end is fixedly connected to a first thermoelectric layer (130), each of the first thermoelectric layers (130) is electrically connected to one of the second connecting ends, the second mounting end is fixedly connected to a second thermoelectric layer (230), each of the second thermoelectric layers (230) is electrically connected to one of the first connecting ends, so that all the first working units (120) and all the second working units (220) are staggered and connected end to end, wherein the first working units (120) and the second working units (220) located at the two ends are electrically connected to the two wire bonding pads (240) respectively.
2. The heating and cooling chip according to claim 1, characterized in that: All of the first working units (120) and all of the second working units (220) that are staggered and connected end to end are evenly distributed in a forward and reverse U-shaped continuous alternation manner.
3. The heating and cooling chip according to claim 2, characterized in that: All the first working units (120) are arranged in a first matrix having M rows and N columns, the length direction of the first working units (120) is parallel to the column direction of the first matrix, the first mounting ends and the first connecting ends of two adjacent first working units (120) in the row direction of the first matrix are in opposite positions, and the first mounting ends and the first connecting ends of two adjacent first working units (120) in the column direction of the first matrix are in the same position; All the second working units (220) are divided into a first area (201), a second area (202), a third area (203) and a fourth area (204); all the second working units (220) in the second area (202) are arranged into a second matrix having M-1 rows and N columns; the length direction of all the second working units (220) in the second area (202) is parallel to the column direction of the second matrix; the positions of the second mounting ends and the second connecting ends of two adjacent second working units (220) in the row direction of the second matrix are opposite; the positions of the second mounting ends and the second connecting ends of two adjacent second working units (220) in the column direction of the second matrix are the same; and on both sides in the column direction of the second matrix, the first area (20 1) and the third area (203), the first area (201) includes K second working units (220) spaced evenly along the row direction of the second matrix, the length direction of all the second working units (220) in the first area (201) is parallel to the row direction of the second matrix, the third area (203) includes K-1 second working units (220) spaced evenly along the row direction of the second matrix, the length direction of all the second working units (220) in the third area (203) is parallel to the row direction of the second matrix, the fourth area (204) includes one second working unit (220), and the fourth area (204) is located on one side of the third area (203) in the row direction of the second matrix; wherein M is a positive integer, N is an even number, and K=N / 2.
4. The heating and cooling chip according to any one of claims 1 to 3, characterized in that: Among all the first working units (120) and all the second working units (220) that are connected end to end in an interlaced manner, the first working unit (120) located at the end is electrically connected to one of the bonding pads (240) through the first thermoelectric layer (130), and the second working unit (220) located at the end is integrally formed with another of the bonding pads (240).
5. A method for manufacturing a heating and cooling chip, characterized in that: Used to manufacture the heating and cooling chip according to any one of claims 1 to 4, the heating and cooling chip manufacturing method comprises the following steps: S10: providing a processing substrate, and dividing all the processing substrates into the first substrate (110) and the second substrate (210); S20: selecting the first working surface on the first substrate (110), selecting the second working surface on the second substrate (210), and accordingly forming a plurality of conductive layers at corresponding positions on each of the first working surfaces and each of the second working surfaces, and processing two wire bonding pads (240) on each of the second working surfaces; S30: forming a thermoelectric adhesion layer on each of the conductive layers; S40: defining a avoidance region on each of the thermoelectric adhesion layers, and forming an etching auxiliary layer on a portion of each of the thermoelectric adhesion layers except the avoidance region; S50: forming a thermoelectric layer at each of the avoidance regions using a thermoelectric material, and the thermoelectric material formed outside the avoidance regions adheres to the etching auxiliary layer; S60: removing the etching auxiliary layer by an etching process, and taking away a portion of the thermoelectric layer adhering to the etching auxiliary layer; S70: bonding the first working surface on the first substrate (110) and the second working surface on the second substrate (210) in a face-to-face manner to form the heating and cooling chip.
6. The method for manufacturing a heating and cooling chip according to claim 5, characterized in that: The thermoelectric adhesion layer comprises titanium and / or nickel; the etching auxiliary layer is patterned silicon dioxide with gold sputtered on the surface; or, The etching auxiliary layer is patterned silicon dioxide with platinum sputtered on the surface.
7. The method for manufacturing a heating and cooling chip according to claim 5, characterized in that: The thermoelectric material is formed at the avoidance area by co-sputtering at least two materials.
8. The method for manufacturing a heating and cooling chip according to claim 5, characterized in that: The thermoelectric material includes bismuth telluride and lead telluride.
9. The method for manufacturing a heating and cooling chip according to claim 5, characterized in that: The conductive layer is made of gold or platinum.
10. The method for manufacturing a heating and cooling chip according to claim 5, characterized in that: The processing method of the thermoelectric material is selected from any one of acid solution corrosion, dry etching and laser cutting.