Multi-product perovskite film layer vacuum evaporation equipment

Abstract

The invention relates to multi-product perovskite film layer vacuum evaporation equipment which comprises an evaporation chamber, line sources and mask plates, the line sources and the mask plates are arranged in the evaporation chamber, the multiple line sources are arranged at the bottom of the evaporation chamber side by side at intervals, and a baffle is arranged between any two adjacent line sources; a plurality of cavities which are arranged at intervals and are used for placing evaporation materials are formed in each line source, and each cavity is provided with an air inlet hole for introducing inert gas; a plurality of hollow-out areas are arranged on the mask plate at intervals, the plurality of hollow-out areas are arranged in one-to-one correspondence with the plurality of line sources respectively, each hollow-out area is provided with a plurality of openings at intervals, and the plurality of openings of the hollow-out areas are arranged in one-to-one correspondence with the plurality of cavities of the corresponding line sources respectively; the multi-product perovskite film layer vacuum evaporation equipment further comprises an inert gas source, the inert gas source communicates with the multiple air inlet holes through multiple pipelines, and each pipeline is provided with an electric control flow valve. According to the vacuum evaporation device, vacuum evaporation of different materials and different film thicknesses can be completed at a time under the condition of no vacuum breaking.

Description

Technical Field

[0001] The present invention relates to the technical field of perovskite film preparation, and in particular to a multi-product perovskite film vacuum evaporation device. Background Art

[0002] Perovskite photovoltaic cells have attracted worldwide attention due to their high visible light absorption, simple film-forming process, and rapid improvement in photoelectric conversion efficiency. The industrialization of perovskite solar cells first needs to solve the technical problem of uniformly preparing perovskite film layers over a large area. There are many methods for preparing perovskite solar cells, which are mainly divided into solution method and vacuum method. The vacuum method is to prepare the perovskite precursor material directly onto the substrate under vacuum conditions through thermal evaporation, sputtering, near-space sublimation (CSS), vapor transport (VTD), near-space vapor transport (CSVT), etc., without the involvement of solvents throughout the process. The vacuum method can conformally deposit perovskite film layers on substrates with different roughness or morphology.

[0003] In current perovskite evaporation, one or several sets of line sources are used to evaporate the glass substrate. Each evaporation can only test one set of technical specifications. If multiple process parameter data are required, different materials need to be mixed for multiple evaporation. For example, when it is necessary to collect different ratio data of evaporation material A with two thicknesses of X1 and X2, and evaporation material B with two thicknesses of Y1 and Y2, it is necessary to first evaporate material A with thicknesses of X1, X1, X2, and X2 on four glass substrates, and then evaporate material B with thicknesses of Y1, Y2, Y1, and Y2 on four glass substrates, so as to obtain four ratios of material A and material B: X1Y1, X1Y2, X2Y1, and X2Y2. However, for vacuum evaporation, each time the material is changed, the vacuum needs to be destroyed and the temperature needs to be lowered. After the material is changed, the vacuum needs to be evaporated and the temperature needs to be raised, which is time-consuming and labor-intensive. Summary of the invention

[0004] Based on this, the purpose of the present invention is to provide a multi-product perovskite film vacuum evaporation equipment that can achieve vacuum evaporation of different materials with different film thicknesses at one time.

[0005] To achieve the above object, the present invention adopts the following technical solutions: The present invention first provides a multi-product perovskite film vacuum evaporation device, which includes an evaporation chamber, a line source and a mask plate arranged in the evaporation chamber; a plurality of line sources are provided, and the plurality of line sources are arranged side by side and spaced apart at the bottom of the evaporation chamber, and a baffle is provided between any two adjacent line sources, and a plurality of partitions are provided in each line source to form a plurality of spaced apart chambers for placing evaporation materials in the line source, and each chamber is provided with an air inlet for introducing an inert gas; A plurality of hollow areas are arranged at intervals on the mask plate, and the plurality of hollow areas are arranged one-to-one correspondingly to the plurality of line sources respectively, and each of the hollow areas is arranged at intervals with a plurality of openings, and the plurality of openings in the hollow areas are arranged one-to-one correspondingly to the plurality of chambers of the corresponding line sources respectively; The multi-product perovskite film vacuum evaporation equipment also includes an inert gas source, which is connected to the multiple air inlets through multiple pipelines, and each pipeline is provided with an electrically controlled flow valve.

[0006] As a further improvement of the above-mentioned scheme of the present invention, the multi-product perovskite film vacuum evaporation equipment also includes a moving part and a bracket; the moving part is arranged in the evaporation chamber; the bracket is located above the mask plate, the bracket is installed on the moving part and is driven to move by the moving part, and a glass substrate is adsorbed on the side of the bracket facing the mask plate.

[0007] The present invention first provides a multi-product perovskite film vacuum evaporation device, which includes an evaporation chamber, a line source and a mask plate arranged in the evaporation chamber; a plurality of cavities connected to the evaporation chamber are arranged at intervals at the bottom of the evaporation chamber; a plurality of line sources are arranged and the plurality of line sources are arranged in a plurality of cavities respectively, and a plurality of partitions are arranged in each line source to form a plurality of spaced-apart cavities for placing evaporation materials in the line source, and each cavity is provided with an air inlet for introducing an inert gas; A plurality of hollow areas are arranged at intervals on the mask plate, and the plurality of hollow areas are arranged one-to-one correspondingly to the plurality of line sources respectively, and each of the hollow areas is arranged at intervals with a plurality of openings, and the plurality of openings in the hollow areas are arranged one-to-one correspondingly to the plurality of chambers of the corresponding line sources respectively; The multi-product perovskite film vacuum evaporation equipment also includes an inert gas source, which is connected to the multiple air inlets through multiple pipelines, and each pipeline is provided with an electrically controlled flow valve.

[0008] As a further improvement of the above solution of the present invention, the multi-product perovskite film vacuum evaporation equipment also includes a guide rail, and the mask plate moves along the guide rail in the evaporation chamber.

[0009] As a further improvement of the above solution of the present invention, the height of the partition is higher than the height of the line source.

[0010] As a further improvement of the above solution of the present invention, each partition is connected to the line source in a detachable manner.

[0011] As a further improvement of the above-mentioned solution of the present invention, the multi-product perovskite film vacuum evaporation equipment also includes a plurality of cover plates, and the plurality of cover plates are respectively detachably connected to the open ends of the plurality of line sources.

[0012] As a further improvement of the above solution of the present invention, the shape of the opening is square, circular or polygonal.

[0013] As a further improvement of the above solution of the present invention, the evaporation chamber is provided with at least one exhaust hole.

[0014] As a further improvement of the above solution of the present invention, the same evaporation material is placed in each chamber of the same line source, and different evaporation materials are placed in the chambers of different line sources.

[0015] As a further improvement of the above solution of the present invention, the flow rate of the inert gas in each chamber is adjusted by the electronically controlled flow valve according to the evaporation thickness of the evaporation material.

[0016] Compared with the prior art, the present invention has the following beneficial effects: The present invention can complete vacuum evaporation of different materials with different film thicknesses at one time without breaking the air, can realize simultaneous evaporation of multiple materials, reduces the number of breaking the air and vacuuming, improves the efficiency of the experiment, and has a small equipment footprint, which greatly reduces the cost of technical verification and improves the efficiency of technical verification. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1 This is a schematic structural diagram of a multi-product perovskite film vacuum evaporation device proposed in Example 1 of the present invention; Figure 2 This is a schematic diagram of the structure of a line source in a multi-product perovskite film vacuum evaporation device proposed in Example 1 of the present invention; Figure 3 This is a schematic structural diagram of a mask plate in a multi-product perovskite film vacuum evaporation device proposed in Example 1 of the present invention; Figure 4 Another schematic diagram of the structure of a line source in a multi-product perovskite film vacuum evaporation device proposed in Example 1 of the present invention; Figure 5 Another structural schematic diagram of a mask plate in a multi-product perovskite film vacuum evaporation device proposed in Example 1 of the present invention; Figure 6 This is a schematic diagram of the structure of a glass substrate after evaporation according to Example 1 of the present invention; Figure 7 This is a schematic structural diagram of a multi-product perovskite film vacuum evaporation device proposed in Example 2 of the present invention.

[0018] Figure numerals: 1. Line source; 2. Mask plate; 3. Baffle; 4. Partition; 5. Chamber; 6. Air inlet; 7. Opening; 8. Pipe; 9. Cover plate; 10. Evaporation chamber; 11. Glass substrate; 12. Exhaust hole; 13. Cavity. DETAILED DESCRIPTION

[0019] For ease of understanding of the present invention, the present invention will be described more fully below in conjunction with specific embodiments. However, the present invention can be implemented in many different forms and is not limited to the embodiments described herein. On the contrary, the purpose of providing these embodiments is to make the disclosure of the present invention more thoroughly understood.

[0020] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by those skilled in the art of the present invention. The terms used in the specification of the present invention herein are only for the purpose of describing specific embodiments and are not intended to limit the present invention.

[0021] Example 1 Reference Figure 1 This embodiment proposes a multi-product perovskite film vacuum evaporation device, which includes an evaporation chamber 10, multiple line sources 1, an inert gas source (not shown), a moving part (not shown), a mask plate 2 and a bracket (not shown), and also includes multiple cover plates 9.

[0022] The evaporation chamber 10 is used to provide a high vacuum environment. Under the high vacuum state, the collision and interference of gas molecules on the evaporation material particles can be reduced, thereby ensuring that the evaporation material particles can be smoothly transferred from the evaporation source to the surface of the glass substrate 11. The evaporation chamber 10 is provided with at least one exhaust hole 12, which is used to connect to the vacuum equipment.

[0023] Multiple line sources 1 are arranged side by side at intervals at the bottom of the evaporation chamber 10, and a baffle 3 is arranged between any two adjacent line sources 1. The number of line sources 1 can be reasonably set according to actual needs. The height of the baffle 3 should be higher than the height of the line source 1 to prevent the evaporation materials in the two adjacent line sources 1 from affecting each other during evaporation. Figure 2 , each line source 1 is provided with a plurality of partitions 4 at intervals along its length direction, and the partitions 4 divide the inside of the line source 1 into a plurality of chambers 5 for placing the evaporation material. In this embodiment, the partitions 4 and the line source 1 are connected in a detachable manner. Specifically, a plurality of slots can be provided on the opposite side walls of the line source 1, and the partitions 4 are adapted to the slots so that the two sides of the partition 4 can be inserted into the corresponding two slots from top to bottom. The height of the partition 4 is higher than the height of the line source 1. In this embodiment, the height of the partition 4 can be consistent with the height of the baffle 3. The same evaporation material is placed in the multiple chambers 5 of the same line source 1, while different evaporation materials are placed in different line sources 1. In this way, a chamber 5 of the line source 1 can be regarded as a point source. The bottom of each chamber 5 of the line source 1 is provided with an air inlet 6 for introducing an inert gas. In this embodiment, the total number of chambers 5 needs to be reasonably set according to actual needs. Each line source 1 is provided with a heater, which is used to heat the evaporation material in each chamber 5 to a steam state.

[0024] The inert gas source is arranged outside the evaporation chamber 10, and the inert gas source is connected to the multiple air inlet holes 6 through multiple pipes 8, and each pipe 8 is provided with an electrically controlled flow valve. According to the evaporation thickness of the evaporation material, the flow rate of the inert gas entering each chamber 5 can be adjusted by adjusting the electrically controlled flow valve, thereby adjusting the inert gas content in each chamber 5.

[0025] The moving part is arranged in the evaporation chamber 10 and is located above the plurality of line sources 1. The bracket is mounted on the moving part and is driven by the moving part to move at a constant speed. The mask plate 2 is arranged in the evaporation chamber 10 and is located below the bracket and can move relative to the bracket. Figure 3 The mask plate 2 is provided with a plurality of hollow areas at intervals, and the plurality of hollow areas are respectively provided in one-to-one correspondence with the plurality of line sources 1. Each hollow area is provided with a plurality of openings 7 at intervals, and the plurality of openings 7 in the hollow areas are respectively provided in one-to-one correspondence with the plurality of chambers 5 of the corresponding line sources 1. The shape of the openings 7 can be square, circular or polygonal, and the shape of the openings 7 can be reasonably selected according to actual needs. A glass substrate 11 is adsorbed on one side of the bracket facing the mask plate 2, and the glass substrate 11 moves at a uniform speed following the bracket.

[0026] The multiple cover plates 9 are respectively arranged corresponding to the multiple line sources 1. When the partition plates 4 in the line sources 1 are removed, the cover plates 9 can be matched and connected with the top openings 7 of the corresponding line sources 1 to seal the line sources 1.

[0027] In the above structural setting of the vacuum evaporation equipment of this embodiment, the glass substrate 11 moves at a uniform speed along the transmission direction. Under the action of the heater, after the evaporation material in the chamber 5 evaporates, the movement speed of the evaporation material molecules is fixed at the same temperature. By adding inert gas molecules to the chamber 5, the number of collisions of the evaporation material molecules can be increased, that is, the time for the evaporation material molecules to be deposited on the glass substrate 11 is increased, thereby reducing the thickness of the evaporation film. This is because in vacuum evaporation, the vaporization process of the evaporation material is a typical evaporation phenomenon. At a certain temperature, the pressure exhibited by the vapor of the evaporation material in the equilibrium process of the solid or liquid is called the saturated vapor pressure at that temperature, and the evaporation process can only occur under the saturated vapor pressure.

[0028] Saturated vapor pressure is positively correlated with temperature changes, that is, saturated vapor pressure increases rapidly as temperature rises. Evaporation is easier to occur in a vacuum than under atmospheric pressure, and the temperature required for evaporation is lower than that under atmospheric pressure. Generally speaking, in vacuum evaporation, as long as the saturated vapor pressure of the evaporation material (metal or its compound) can be heated to above 1Pa, the metal or its compound can evaporate rapidly. The number of molecules evaporated from the surface per unit time and per unit area has the following relationship with the evaporation temperature:

[0029] In the above formula: av represents the evaporation coefficient, which is generally believed to be closely related to the cleanliness of the evaporating surface; Peq is the saturated vapor pressure of the evaporating material at this temperature; p is the partial pressure of the evaporating material under the current environment; M represents the molecular mass of the evaporating material; NA and KB are Avogadro's constant and Boltzmann's constant, respectively.

[0030] According to Dalton's law of partial pressures, in a gas mixture in any container, if no chemical reaction occurs between the components, each gas is evenly distributed throughout the container, and the pressure it generates is the same as the pressure it generates when it occupies the entire container alone; the partial pressure p generated by a certain gas in a gas mixture is equal to the pressure it generates when it occupies the entire container alone at the same temperature; and the total pressure of the gas mixture is equal to the sum of the partial pressures of each gas therein, which can be considered to be zero partial pressure in a high vacuum environment.

[0031] For gas, at a certain moment, the speed of a particular molecule is unpredictable, and the direction of movement is also random. However, under certain macroscopic conditions, for a large number of gas molecules, their speed distribution obeys certain statistical laws. According to the Maxwell-Boltzmann velocity distribution law, if among N gas molecules, the number of molecules whose molecular thermal motion speed is between v→v+dv is dN, then:

[0032] In the above formula: F(v) is the Maxwell velocity distribution function, T is the temperature, and m0 is the molecular mass. From the above formula, we can see that the velocity distribution function is related to the temperature and the type of gas. As the temperature rises, the proportion of molecules with higher speeds will increase; gases with heavy molecular mass have a greater probability of being at low speeds, while gases with light molecular mass have more at high speeds. When the temperature remains unchanged, the molecular thermal motion speed also remains unchanged.

[0033] But in fact, the motion path of gas molecules is composed of broken lines after many molecular collisions. The collision between molecules is a random process, so the difference in free path is large, but the statistical average of a large number of free paths is certain, which is called the mean free path of gas thermal motion:

[0034] In the above formula: d is the effective diameter of the gas molecule, the unit is m; n is the number of molecules per unit volume.

[0035] It can be seen from this that by increasing the inert gas, the number of inert gas molecules per unit volume is increased, thereby changing the mean free path of thermal motion of the evaporation material gas, thereby reducing the evaporation rate.

[0036] Taking the collection of different ratio data of evaporation material A with three thicknesses of X1, X2, and X3, and evaporation material B with three thicknesses of Y1, Y2, and Y3 as an example, the working principle of the vacuum evaporation equipment of this embodiment is explained.

[0037] Two adjacent line sources 1 are selected, and the remaining line sources 1 are sealed with a cover plate 9, and the two line sources 1 are defined as line source M and line source N respectively. Figure 4 As shown, two partitions 4 are inserted into the line source M and the line source N to separate the inside of the line source M and the line source N into three chambers 5, and the evaporation material A is placed in the three chambers 5 of the line source M, and the evaporation material B is placed in the three chambers 5 of the line source N; Figure 5 As shown, a mask plate 2 having three openings 7 in each hollow area is used. During evaporation, the moving part drives the glass substrate 11 to move from the line source M to the line source N. When the first row of evaporation areas of the glass substrate 11 moves to above the line source M, the evaporation material A in the line source M evaporates and reaches the first row of evaporation areas of the glass substrate 11 through the three openings 7 in the hollow area corresponding to the line source M. By adjusting the inert gas flow rate of the three chambers 5 of the line source M, the evaporation material A with thicknesses of X1, X2, and X3 are evaporated in the first row of evaporation areas of the glass substrate 11. The glass substrate 11 continues to move forward. When the first row of evaporation areas of the glass substrate 11 moves to above the line source N and the second row of evaporation areas moves to the line source N, the evaporation material A in the first row of evaporation areas of the glass substrate 11 is evaporated to the first row of evaporation areas of the glass substrate 11. When the line source M is above the glass substrate 11, the evaporation material B in the line source N evaporates and reaches the first row of evaporation areas of the glass substrate 11 through the three openings 7 of the hollow area corresponding to the line source N, and the evaporation material A in the line source M evaporates and reaches the second row of evaporation areas of the glass substrate 11 through the three openings 7 of the hollow area corresponding to the line source M. By adjusting the inert gas flow rates of the chambers 5 of the line source M and the line source N, the evaporation material B with thicknesses of Y1, Y2, and Y3 are evaporated in the first row of evaporation areas of the glass substrate 11, and the evaporation material A with thicknesses of X2, X3, and X1 are evaporated in the first row of evaporation areas of the glass substrate 11; and this is repeated, as shown in FIG. Figure 6 As shown, three types of evaporation data X1Y1, X2Y2, and X3Y3 are finally evaporated in the first row of evaporation areas of the glass substrate 11, three types of evaporation data X2Y1, X3Y2, and X1Y3 are evaporated in the second row of evaporation areas, and three types of evaporation data X3Y1, X1Y2, and X2Y3 are evaporated in the third row of evaporation areas. A speed regulating valve is used to adjust the amount of inert gas to achieve the adjustment of material evaporation thickness and reduce the consumption of evaporation materials, thereby realizing data collection of multiple products with different ratios in one evaporation.

[0038] Example 2 This embodiment proposes a multi-product perovskite film vacuum evaporation device, which is different from the embodiment 1 in that: Figure 7A plurality of cavities 13 connected to the evaporation chamber 10 are arranged at intervals at the bottom thereof, and a plurality of line sources 1 are arranged in the plurality of cavities 13 respectively; a guide rail (not shown) is also arranged in the evaporation chamber 10, and the mask plate 2 and the glass substrate 11 move along the guide rail in the evaporation chamber 10.

[0039] Taking the collection of different ratio data of evaporation material A with three thicknesses of X1, X2, and X3, and evaporation material B with three thicknesses of Y1, Y2, and Y3 as an example, the working principle of the vacuum evaporation equipment of this embodiment is explained.

[0040] Two of the line sources 1 are selected, and the remaining line sources 1 are sealed with a cover plate 9, and the two line sources 1 are respectively defined as a line source M and a line source N. Two partitions 4 are inserted into the line source M and the line source N to separate the inside of the line source M and the line source N into three chambers 5, and the evaporation material A is placed in the three chambers 5 of the line source M, and the evaporation material B is placed in the three chambers 5 of the line source N; a mask plate 2 with three openings 7 in each hollow area is used.During evaporation, the glass substrate 11 moves on the guide rail from the line source M to the line source N. When the first row of evaporation areas of the glass substrate 11 moves to the evaporation area of ​​the evaporation material A, the vapor of the evaporation material A reaches the first row of evaporation areas of the glass substrate 11 through the three openings 7 in the first row of the mask plate. By adjusting the inert gas flow rate of the three chambers 5 of the line source M, the evaporation material A with thicknesses of X1, X2, and X3 are evaporated in the first row of evaporation areas of the glass substrate 11. The glass substrate 11 continues to move forward. When the second row of evaporation areas of the glass substrate 11 moves to the evaporation area of ​​the evaporation material A, the vapor of the evaporation material A passes through the second row of the mask plate. The three openings 7 reach the second row of evaporation areas of the glass substrate 11, and by adjusting the inert gas flow rates of the three chambers 5 of the line source M, evaporation materials A with thicknesses of X2, X3, and X1 are deposited in the second row of evaporation areas of the glass substrate 11; the glass substrate 11 continues to move forward, and when the third row of evaporation areas of the glass substrate 11 moves to the evaporation area of ​​the evaporation material A, the vapor of the evaporation material A reaches the third row of evaporation areas of the glass substrate 11 through the three openings 7 of the third row of the mask plate, and by adjusting the inert gas flow rates of the three chambers 5 of the line source M, evaporation materials A with thicknesses of X3, X1, and X1 are deposited in the third row of evaporation areas of the glass substrate 11. 2; the glass substrate 11 continues to move forward, when the first row of evaporation areas of the glass substrate 11 moves to the evaporation area of ​​the evaporation material B, the vapor of the evaporation material B reaches the first row of evaporation areas of the glass substrate 11 through the three openings 7 in the first row of the mask plate, and by adjusting the inert gas flow rate of the three chambers 5 of the line source N, the evaporation material B with thicknesses of Y1, Y2, and Y3 are evaporated in the first row of evaporation areas of the glass substrate 11; the glass substrate 11 continues to move forward, when the second row of evaporation areas of the glass substrate 11 moves to the evaporation area of ​​the evaporation material B, the vapor of the evaporation material B reaches the glass substrate through the three openings 7 in the second row of the mask plate In the second row of evaporation areas of the plate 11, the inert gas flow rates of the three chambers 5 of the line source N are adjusted to evaporate the evaporation material B with thicknesses of Y2, Y3, and Y1, respectively, in the second row of evaporation areas of the glass substrate 11; the glass substrate 11 continues to move forward, and when the third row of evaporation areas of the glass substrate 11 moves to the evaporation area of ​​the evaporation material B, the vapor of the evaporation material B reaches the third row of evaporation areas of the glass substrate 11 through the three openings 7 of the third row of the mask plate, and the inert gas flow rates of the three chambers 5 of the line source N are adjusted to evaporate the evaporation material B with thicknesses of Y3, Y1, and Y2, respectively, in the third row of evaporation areas of the glass substrate 11; as. Figure 6 As shown, finally, three kinds of evaporation data X1Y1, X2Y2, and X3Y3 are evaporated in the first row of evaporation areas of the glass substrate 11, three kinds of evaporation data X2Y1, X3Y2, and X1Y3 are evaporated in the second row of evaporation areas, and three kinds of evaporation data X3Y1, X1Y2, and X2Y3 are evaporated in the third row of evaporation areas.

[0041] The technical features of the above-described embodiments may be arbitrarily combined. To make the description concise, not all possible combinations of the technical features in the above-described embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0042] The above-mentioned embodiments only express several implementation methods of the present invention, and the descriptions thereof are relatively specific and detailed, but they cannot be understood as limiting the scope of the invention patent. It should be pointed out that, for ordinary technicians in this field, several variations and improvements can be made without departing from the concept of the present invention, and these all belong to the protection scope of the present invention. Therefore, the protection scope of the patent of the present invention shall be subject to the attached claims.

Claims

1. A multi-product perovskite film vacuum evaporation device, comprising an evaporation chamber (10) and a line source (1) and a mask plate (2) arranged in the evaporation chamber (10), characterized in that: A plurality of line sources (1) are provided and the plurality of line sources (1) are arranged side by side and spaced apart at the bottom of the vapor deposition chamber (10), and a baffle (3) is provided between any two adjacent line sources (1), and a plurality of partitions (4) are provided in each line source (1) to form a plurality of spaced apart chambers (5) for placing vapor deposition materials in the line source (1), and each chamber (5) is provided with an air inlet (6) for introducing an inert gas; A plurality of hollow areas are arranged at intervals on the mask plate (2), and the plurality of hollow areas are arranged in one-to-one correspondence with the plurality of line sources (1), each of the hollow areas is arranged in one-to-one correspondence with a plurality of openings (7), and the plurality of openings (7) in the hollow areas are arranged in one-to-one correspondence with the plurality of chambers (5) of the corresponding line sources (1); The multi-product perovskite film vacuum evaporation equipment also includes an inert gas source, which is connected to the multiple air inlet holes (6) through multiple pipelines (8), and each pipeline (8) is provided with an electrically controlled flow valve.

2. The multi-product perovskite film vacuum evaporation equipment according to claim 1, characterized in that: The multi-product perovskite film vacuum evaporation equipment also includes a moving part and a bracket; a plurality of line sources (1) are arranged side by side and spaced apart at the bottom of the evaporation chamber (10); the moving part is arranged in the evaporation chamber (10); the bracket is located above the mask plate (2), the bracket is mounted on the moving part and is driven to move by the moving part, and a glass substrate (11) is adsorbed on the side of the bracket facing the mask plate (2).

3. A multi-product perovskite film vacuum evaporation device, comprising an evaporation chamber (10) and a line source (1) and a mask plate (2) arranged in the evaporation chamber (10), characterized in that: A plurality of cavities (13) in communication with the evaporation chamber (10) are arranged at intervals at the bottom thereof; a plurality of line sources (1) are arranged and the plurality of line sources (1) are arranged in the plurality of cavities (13) respectively; a plurality of partitions (4) are arranged in each line source (1) to form a plurality of chambers (5) arranged at intervals in the line source (1) for placing evaporation materials; each chamber (5) is provided with an air inlet (6) for introducing an inert gas; A plurality of hollow areas are arranged at intervals on the mask plate (2), and the plurality of hollow areas are arranged in one-to-one correspondence with the plurality of line sources (1), each of the hollow areas is arranged in one-to-one correspondence with a plurality of openings (7), and the plurality of openings (7) in the hollow areas are arranged in one-to-one correspondence with the plurality of chambers (5) of the corresponding line sources (1); The multi-product perovskite film vacuum evaporation equipment also includes an inert gas source, which is connected to the multiple air inlet holes (6) through multiple pipelines (8), and each pipeline (8) is provided with an electrically controlled flow valve.

4. The multi-product perovskite film vacuum evaporation equipment according to claim 3, characterized in that: The multi-product perovskite film vacuum evaporation equipment also comprises a guide rail, and the mask plate (2) moves along the guide rail in the evaporation chamber.

5. The multi-product perovskite film vacuum evaporation equipment according to any one of claims 1 to 4, characterized in that: The height of the partition (4) is higher than the height of the line source (1).

6. The multi-product perovskite film vacuum evaporation equipment according to any one of claims 1 to 4, characterized in that: Each partition plate (4) and the line source (1) are connected in a detachable manner.

7. The multi-product perovskite film vacuum evaporation equipment according to any one of claims 1 to 4, characterized in that: The multi-product perovskite film vacuum evaporation equipment further comprises a plurality of cover plates (9), wherein the plurality of cover plates (9) are respectively detachably connected to the opening (7) ends of the plurality of line sources (1).

8. The multi-product perovskite film vacuum evaporation equipment according to any one of claims 1 to 4, characterized in that: The shape of the opening (7) is square, circular or polygonal.

9. The multi-product perovskite film vacuum evaporation equipment according to any one of claims 1 to 4, characterized in that: The vapor deposition chamber (10) is provided with at least one exhaust hole (12).

10. The multi-product perovskite film vacuum evaporation equipment according to any one of claims 1 to 4, characterized in that: The same evaporation material is placed in each chamber (5) of the same line source (1), and different evaporation materials are placed in the chambers (5) of different line sources (1).

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