Spray head, equipment and deposition method

Abstract

The invention provides a spray header, equipment and a deposition method, the spray header comprises a spray unit and a gas supply unit, the spray unit comprises at least two gas tracks, the gas tracks are arranged in parallel and spirally distributed, each gas track is provided with a head end located at the center of the spray unit and a tail end located at the edge of the spray unit, and the gas supply unit is connected with the spray unit. A plurality of spraying holes are formed in the gas tracks, the gas supply unit comprises gas supply pipelines in one-to-one correspondence with the gas tracks, the gas supply pipelines are at least communicated with two positions of the gas tracks and can supply reaction gas to the gas tracks from the at least two positions, and the reaction gas can start to diffuse from multiple positions. The problem of uneven concentration caused by diffusion reaction gas at a single position can be improved, and the uniformity of gas supply is improved, so that the uniformity of film formation on a wafer is improved.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor equipment, and in particular to a shower head, equipment and a deposition method. Background Art

[0002] At present, atomic thin film deposition equipment is widely used. Its chamber is mainly composed of dual independent gas path shower heads on the top and heaters on the bottom. The main function of the shower head is to introduce reactive gas, and the uniform arrangement of openings can increase the uniformity of gas distribution in the chamber and increase the uniform distribution of thin films on the wafer surface.

[0003] In the atomic thin film deposition equipment, the dual gas path tracks are arranged in parallel and spirally, and the reaction gas is supplied to the head end in the middle of the dual gas path track. The reaction gas diffuses from the head end in the middle to the end at the edge, resulting in a longer reaction time and a larger flow rate of the reaction gas at the center of the wafer than at the edge, which seriously affects the uniformity of the wafer, that is, the film thickness at the center of the wafer is greater than the film thickness at the edge, such as Figure 5 shown.

[0004] Therefore, it is necessary to provide a new type of shower head, equipment and deposition method to solve the above problems existing in the prior art. Summary of the invention

[0005] The object of the present invention is to provide a shower head, a device and a deposition method to improve the uniformity of gas supply so as to improve the uniformity of film formation on a wafer.

[0006] To achieve the above-mentioned purpose, the spray head of the present invention includes a spray unit and a gas supply unit, the spray unit includes at least two gas tracks, the gas tracks are arranged in parallel and spirally distributed, and the gas track has a head end located at the center of the spray unit and an end located at the edge of the spray unit; a plurality of spray holes are opened on the gas track, and the gas supply unit includes gas supply pipelines corresponding to the gas tracks one by one, and the gas supply pipelines are connected to at least the head end and the end position of the gas track.

[0007] Optionally, the gas supply pipeline is arranged to alternately ventilate at least the head end and the end end of the gas track.

[0008] Optionally, the gas supply pipeline includes a main pipeline and at least two branches, and the branches are both connected to the main pipeline.

[0009] Optionally, the gas supply pipeline further includes a connecting valve, the main pipeline and the branch pipeline are both connected to the connecting valve, and the connecting valve is used to control the main pipeline to be connected to any corresponding branch pipeline.

[0010] Optionally, the gas supply pipeline further includes connecting valves having the same number as the branch roads, and the connecting valves are arranged on the branch roads to control the on-off of the branch roads.

[0011] The present invention also provides a device, including a spray head, a heating unit and a reaction chamber, wherein the spray head and the heating unit are both arranged in the reaction chamber, and the spray head is located above the heating unit, the spray head includes a spray unit and a gas supply unit, the spray unit includes at least two gas tracks, the gas tracks are arranged in parallel and distributed in a spiral shape, a plurality of spray holes are provided on the gas track, the gas supply unit includes a gas supply pipeline corresponding to the gas track one by one, and the gas supply pipeline is connected to at least two positions of the gas track.

[0012] The present invention also provides a deposition method, comprising:

[0013] Using the deposition device;

[0014] The connecting valve is adjusted to connect at least one of the branch lines with the corresponding main line in different time periods, and the reaction gas is introduced into at least one of the head ends or the tail ends of different gas tracks in sequence through the gas supply pipelines in different time periods.

[0015] Optionally, the connecting valve is adjusted to connect at least one of the several branches with the corresponding main pipeline in a first time period so as to sequentially introduce reaction gas to the head end or the end of different gas tracks; the branch is connected with the corresponding main pipeline in a second time period so as to sequentially introduce reaction gas to the other end of different gas tracks; and at least one cycle operation is performed with the sum of the first time period and the second time period as a period.

[0016] Optionally, the connecting valve is adjusted to connect the branch circuit with the corresponding main circuit in different time periods, so as to sequentially introduce the reaction gas into the head end and the end end of different gas tracks.

[0017] The beneficial effect of the shower head is that: the shower unit includes at least two gas tracks, the gas tracks are parallel and spirally distributed, the gas track has a head end located at the center of the shower unit and a terminal end located at the edge of the shower unit, a plurality of shower holes are provided on the gas track, the gas supply unit includes a gas supply pipeline corresponding to the gas track one by one, the gas supply pipeline is connected to at least two positions of the gas track, and the defect that the reaction gas can only be introduced from the head end of the gas track in the prior art can be changed, the reaction gas can be passed from the head end or the terminal end of the gas track, and the reaction gas can be supplied to the gas track from at least two positions (such as the head end and the terminal end) at the same time, and the reaction gas can diffuse from multiple positions. This change in the reaction gas path structure can improve the problem of uneven concentration caused by diffusion of reaction gas at a single position, improve the uniformity of gas supply, and thus improve the uniformity of film formation on the wafer. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] Figure 1 It is a schematic diagram of the cross-sectional structure of the device in some embodiments of the present invention;

[0019] Figure 2 It is a schematic diagram of the cross-sectional structure of the device in some other embodiments of the present invention;

[0020] Figure 3 A bottom view of a shower head in some embodiments of the present invention;

[0021] Figure 4 A flow chart of a deposition method in some embodiments of the present invention;

[0022] Figure 5 This is a schematic diagram of the prior art showing that the film thickness at the center of a wafer is greater than the film thickness at the edge.

[0023] Description of reference numerals:

[0024] 100. Equipment;

[0025] 101. shower head; 102. heating unit; 103. reaction chamber;

[0026] 1011. spray unit; 1012. air supply unit; 1013. spray hole;

[0027] 10111, first gas track; 10112, second gas track;

[0028] 10121, a first gas supply pipeline; 10122, a second gas supply pipeline;

[0029] 101211, first main line; 101212, first branch line; 101213, second branch line; 101214, first connecting valve; 101215, third connecting valve; 101216, fourth connecting valve;

[0030] 101221. Second main line; 101222. Third branch line; 101223. Fourth branch line; 101224. Second connecting valve; 101225. Fifth connecting valve; 101226. Sixth connecting valve. DETAILED DESCRIPTION

[0031] In order to make the purpose, technical solutions and advantages of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, rather than all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention. Unless otherwise defined, the technical terms or scientific terms used herein should be understood by people with general skills in the field to which the present invention belongs. "Including" and similar words used in this article mean that the elements or objects appearing before the word include the elements or objects listed after the word and their equivalents, without excluding other elements or objects.

[0032] In view of the problems existing in the prior art, an embodiment of the present invention provides a device, which includes a spray head, a heating unit and a reaction chamber, wherein the spray head and the heating unit are both arranged in the reaction chamber, and the spray head is located above the heating unit, the spray head includes a spray unit and a gas supply unit, the spray unit includes at least two gas tracks, the gas tracks are arranged in parallel and spirally distributed, the gas track has a head end located at the center of the spray unit and an end located at the edge of the spray unit, a plurality of spray holes are opened on the gas track, and the gas supply unit includes a gas supply pipeline corresponding to the gas track one by one, the gas supply pipeline is connected to at least the head end and the end position of the gas track, and is used for alternately ventilating the head end and the end position of the gas track.

[0033] In some specific embodiments, the gas supply pipeline includes a main pipeline and at least two branches, and the branches are connected to the main pipeline, wherein one branch is connected to the head end of the gas track, and one branch is connected to the end of the gas track.

[0034] In some further specific embodiments, the gas supply pipeline includes a main pipeline, at least two branches and connecting valves having the same number as the branches, and the connecting valves are arranged on the branches to control the on-off of the branches.

[0035] In some specific embodiments, the gas supply pipeline includes a main line, a connecting valve and at least two branches, the main line and the branches are both connected to the connecting valve, and the connecting valve is used to control the connection between the main line and any corresponding branch.

[0036] Figure 1 Schematic diagram of the cross-sectional structure of the device in some embodiments of the present invention. Figure 2 Schematic diagram of the cross-sectional structure of the device in some embodiments of the present invention. Figure 1 and Figure 2 The device 100 includes a shower head 101, a heating unit 102 and a reaction chamber 103. The shower head 101 and the heating unit 102 are both disposed in the reaction chamber 103, and the shower head 101 is located above the heating unit 102. The heating unit 102 is a well-known technology in the art and will not be described in detail herein.

[0037] Figure 3 FIG. 1 is a bottom view of a shower head in some embodiments of the present invention. Figure 1 , Figure 2 and Figure 3 The spray head 101 includes a spray unit 1011 and a gas supply unit 1012. The spray unit 1011 includes a first gas track 10111 and a second gas track 10112. The first gas track 10111 and the second gas track 10112 are arranged in parallel in a spiral shape. A plurality of spray holes 1013 are provided on the lower side walls of the first gas track 10111 and the second gas track 10112. The gas supply unit 1012 includes a first gas supply pipeline 10121 and a second gas supply pipeline 10122.

[0038] Reference Figure 1 The first gas supply pipeline 10121 includes a first main pipeline 101211, a first branch pipeline 101212, a second branch pipeline 101213 and a first connecting valve 101214. One end of the first branch pipeline 101212, one end of the second branch pipeline 101213 and one end of the first main pipeline 101211 are all connected to the first connecting valve 101214. The other end of the first main pipeline 101211 is used to connect the first reaction gas. The other end of the first branch pipeline 101212 is connected to the head end of the first gas track 10111, and the other end of the second branch pipeline 101213 is connected to the end of the first gas track 10111. The first connecting valve 101214 is a three-way solenoid valve.

[0039] Reference Figure 1The second gas supply pipeline 10122 includes a second main pipeline 101221, a third branch pipeline 101222, a fourth branch pipeline 101223 and a second connecting valve 101224. One end of the third branch pipeline 101222, one end of the fourth branch pipeline 101223 and one end of the second main pipeline 101221 are all connected to the second connecting valve 101224. The other end of the second main pipeline 101221 is used to connect the second reaction gas. The other end of the third branch pipeline 101222 is connected to the head end of the second gas track 10112. The other end of the fourth branch pipeline 101223 is connected to the end of the second gas track 10112. The second connecting valve 101224 is a three-way solenoid valve.

[0040] Reference Figure 2 The first gas supply pipeline 10121 includes a first main pipeline 101211, a first branch pipeline 101212, a second branch pipeline 101213, a third connecting valve 101215 and a fourth connecting valve 101216. One end of the first branch pipeline 101212 and one end of the second branch pipeline 101213 are both connected to one end of the first main pipeline 101211. The other end of the first main pipeline 101211 is used to connect the first reaction gas. The other end of the first branch pipeline 101212 is connected to the head end of the first gas track 10111. The other end of the second branch pipeline 101213 is connected to the end of the first gas track 10111. The third connecting valve 101215 is arranged on the first branch pipeline 101212. The fourth connecting valve 101216 is arranged on the second branch pipeline 101213.

[0041] Reference Figure 2 The second gas supply pipeline 10122 includes a second main pipeline 101221, a third branch pipeline 101222, a fourth branch pipeline 101223, a fifth connecting valve 101225 and a sixth connecting valve 101226. One end of the third branch pipeline 101222 and one end of the fourth branch pipeline 101223 are both connected to one end of the second main pipeline 101221. The other end of the second main pipeline 101221 is used to receive the second reaction gas. The other end of the third branch pipeline 101222 is connected to the head end of the second gas track 10112. The other end of the fourth branch pipeline 101223 is connected to the end of the second gas track 10112. The fifth connecting valve 101225 is arranged on the third branch pipeline 101222. The sixth connecting valve 101226 is arranged on the fourth branch pipeline 101223.

[0042] Figure 4 FIG. 1 is a flow chart of a deposition method in some embodiments of the present invention. Figure 4 , the deposition method comprises the following steps:

[0043] S0: using the deposition equipment;

[0044] S1: adjusting the connecting valve to connect at least one of the branch lines with the corresponding main line in different time periods, and introducing reaction gas to at least one of the head ends or the tail ends of different gas tracks in turn through the gas supply pipelines in different time periods.

[0045] In some embodiments, the connecting valve is adjusted to connect at least one of the several branch circuits with the corresponding main circuit in a first time period so as to sequentially introduce the reaction gas to the head end or the end of different gas tracks; in a second time period, the branch circuit is connected with the corresponding main circuit so as to sequentially introduce the reaction gas to the other end of different gas tracks; and at least one cycle operation is performed with the sum of the first time period and the second time period as a period.

[0046] In some other embodiments, the connecting valve is adjusted to connect the branch circuit with the corresponding main circuit in different time periods, so as to sequentially introduce the reaction gas into the head end and the end end of different gas tracks.

[0047] by Figure 1For example, at the first moment, the first connecting valve 101214 connects the first main line 101211 and the first branch line 101212, and the first connecting valve 101214 shuts off the first main line 101211 and the second branch line 101213, so as to introduce the first reaction gas into the head end of the first gas track 10111, and the first reaction gas diffuses from the head end of the first gas track 10111 to the end of the first gas track 10111, and in the process of diffusion, the first reaction gas diffuses from the spray hole 1013. At the second moment, the second connecting valve 101224 connects the second main line 101221 and the third branch line 101222, and the second connecting valve 101224 shuts off the second main branch line 101221 and the fourth branch line 101223, so as to introduce the second reaction gas into the head end of the second gas track 10112, and the second reaction gas diffuses from the head end of the second gas track 10112 to the end of the second gas track 10112, and is sprayed from the spray hole 1013 during the diffusion process. At the third moment, the first connecting valve 101214 connects the first main line 101211 and the second branch line 101213, and the first connecting valve 101214 shuts off the first main line 101211 and the first branch line 101212, so as to introduce the first reaction gas into the end of the first gas track 10111, and the first reaction gas begins to diffuse from the end of the first gas track 10111 to the head end of the first gas track 10111, and is sprayed out from the spray hole 1013 during the diffusion process. ; At the fourth moment, the second connecting valve 101224 connects the second main line 101221 and the fourth branch line 101223, and the second connecting valve 101224 shuts off the second main line 101221 and the third branch line 101222, so as to introduce the second reaction gas into the end of the second gas track 10112, and the second reaction gas begins to diffuse from the end of the second gas track 10112 to the head end of the second gas track 10112, and is sprayed out from the spray hole 1013 during the diffusion process. The first reaction gas is diffused from the head and the end of the first gas track 10111 to the middle, thereby preventing the concentration of the first reaction gas at the spray hole 1013 at the head end of the first gas track 10111 from being much higher than the concentration at the spray hole 1013 at the end. Similarly, the second reaction gas is diffused from the head and the end of the second gas track 10112 to the middle, thereby preventing the concentration of the second reaction gas at the spray hole 1013 at the head end of the second gas track 10112 from being higher than the concentration at the spray hole 1013 at the end. The uniformity of the gas in the reaction chamber is increased, and the uniformity of the film on the surface of the wafer is increased.

[0048] by Figure 1For example, at the first moment, the first connecting valve 101214 shuts off the first main line 101211 and the first branch line 101212, and the first connecting valve 101214 connects the first main line 101211 and the second branch line 101213 to introduce the first reaction gas to the end of the first gas track 10111, and the first reaction gas diffuses from the end of the first gas track 10111 to the head end of the first gas track 10111, and in the process of diffusion, the first reaction gas diffuses from the spray hole 1013 to the spray hole 1013. At the second moment, the second connecting valve 101224 shuts off the second main line 101221 and the third branch line 101222, and the second connecting valve 101224 connects the second main branch line 101221 and the fourth branch line 101223 to introduce the second reaction gas to the end of the second gas track 10112, and the second reaction gas diffuses from the end of the second gas track 10112 to the head end of the second gas track 10112, and is sprayed from the spray hole 1013 during the diffusion process. At the third moment, the first connecting valve 101214 shuts off the first main line 101211 and the second branch line 101213, and the first connecting valve 101214 connects the first main line 101211 and the first branch line 101212 to introduce the first reaction gas into the head end of the first gas track 10111, and the first reaction gas diffuses from the head end of the first gas track 10111 to the end of the first gas track 10111, and is sprayed out from the spray hole 1013 during the diffusion process. ; At the fourth moment, the second connecting valve 101224 cuts off the second main line 101221 and the fourth branch line 101223, and the second connecting valve 101224 connects the second main line 101221 and the third branch line 101222 to introduce the second reaction gas into the head end of the second gas track 10112, and the second reaction gas begins to diffuse from the head end of the second gas track 10112 to the end of the second gas track 10112, and is sprayed out from the spray hole 1013 during the diffusion process. The first reaction gas is diffused from the end and the head end of the first gas track 10111 to the middle, thereby preventing the concentration of the first reaction gas at the end spray hole 1013 of the first gas track 10111 from being much higher than the concentration at the head spray hole 1013. Similarly, the second reaction gas is diffused from the end and the head end of the second gas track 10112 to the middle, thereby preventing the concentration of the second reaction gas at the end spray hole 1013 of the second gas track 10112 from being higher than the concentration at the head spray hole 1013. This increases the uniformity of the gas in the reaction chamber and the uniformity of the film on the wafer surface.

[0049] by Figure 1For example, at the first moment, the first connecting valve 101214 connects the first main line 101211 and the first branch line 101212, and the first connecting valve 101214 connects the first main line 101211 and the second branch line 101213, so as to introduce the first reaction gas into the head end and the end of the first gas track 10111, and the first reaction gas diffuses from the head end and the end of the first gas track 10111 to the middle of the first gas track 10111, and is sprayed from the spray hole 1013 during the diffusion process. Out; at the second moment, the second connecting valve 101224 connects the second main line 101221 and the third branch 101222, and the second connecting valve 101224 connects the second main branch 101221 and the fourth branch 101223, so as to introduce the second reaction gas into the head and the end of the second gas track 10112, and the second reaction gas begins to diffuse from the head and the end of the second gas track 10112 to the middle of the second gas track 10112, and is sprayed out from the spray hole 1013 during the diffusion process. The first reaction gas diffuses from the head and the end of the first gas track 10111 to the middle of the first gas track 10111, thereby avoiding the concentration difference of the first reaction gas at the spray holes 1013 at the head and the end of the first gas track 10111. The second reaction gas diffuses from the head and the end of the second gas track 10112 to the middle of the second gas track 10112, thereby avoiding the concentration difference of the second reaction gas at the spray holes 1013 at the head and the end of the second gas track 10112, thereby increasing the uniformity of the gas in the reaction chamber and increasing the uniformity of the film on the surface of the wafer.

[0050] by Figure 2For example, at the first moment, the third connecting valve 101215 is turned on, the fourth connecting valve 101216 is turned off, the first main line 101211 is connected to the first branch line 101212, so as to introduce the first reaction gas to the head end of the first gas track 10111, the first reaction gas begins to diffuse from the head end of the first gas track 10111 to the end of the first gas track 10111, and is sprayed out from the spray hole 1013 during the diffusion process; at the second moment, the fifth connecting valve 101225 is turned on, the sixth connecting valve 101226 is turned off, the second main line 101221 is connected to the third branch line 101222, so as to introduce the second reaction gas to the head end of the second gas track 10112, the second reaction gas begins to diffuse from the head end of the second gas track 10112 to the end of the second gas track 10112, and is sprayed out from the spray hole 1013 during the diffusion process. out; at the third moment, the fourth connecting valve 101216 is turned on, the third connecting valve 101215 is turned off, the first main line 101211 is connected with the second branch line 101213, so as to introduce the first reaction gas to the end of the first gas track 10111, the first reaction gas starts to diffuse from the end of the first gas track 10111 to the head end of the first gas track 10111, and is sprayed out from the spray hole 1013 during the diffusion process; at the fourth moment, the sixth connecting valve 101226 is turned on, the fifth connecting valve 101225 is turned off, the second main line 101221 is connected with the fourth branch line 101223, so as to introduce the second reaction gas to the end of the second gas track 10112, the second reaction gas starts to diffuse from the end of the second gas track 10112 to the head end of the second gas track 10112, and is sprayed out from the spray hole 1013 during the diffusion process. The first reaction gas is diffused from the head and the end of the first gas track 10111 to the middle, thereby preventing the concentration of the first reaction gas at the spray hole 1013 at the head end of the first gas track 10111 from being much higher than the concentration at the spray hole 1013 at the end. Similarly, the second reaction gas is diffused from the head and the end of the second gas track 10112 to the middle, thereby preventing the concentration of the second reaction gas at the spray hole 1013 at the head end of the second gas track 10112 from being higher than the concentration at the spray hole 1013 at the end. The uniformity of the gas in the reaction chamber is increased, and the uniformity of the film on the surface of the wafer is increased.

[0051] by Figure 2For example, at the first moment, the third connecting valve 101215 is closed, the fourth connecting valve 101216 is turned on, the first main line 101211 is connected to the second branch line 101213, so that the first reaction gas is introduced into the end of the first gas track 10111, and the first reaction gas diffuses from the end of the first gas track 10111 to the head end of the first gas track 10111, and is sprayed out from the spray hole 1013 during the diffusion process; at the second moment, the fifth connecting valve 101225 is closed, the sixth connecting valve 101226 is turned on, the second main line 101221 is connected to the fourth branch line 101223, so that the second reaction gas is introduced into the end of the second gas track 10112, and the second reaction gas diffuses from the end of the second gas track 10112 to the head end of the second gas track 10112, and is sprayed out from the spray hole 1013 during the diffusion process. out; at the third moment, the fourth connecting valve 101216 is closed, the third connecting valve 101215 is turned on, the first main channel 101211 is connected with the first branch channel 101212, so as to introduce the first reaction gas to the head end of the first gas track 10111, the first reaction gas begins to diffuse from the head end of the first gas track 10111 to the end of the first gas track 10111, and is ejected from the spray hole 1013 during the diffusion process; at the fourth moment, the sixth connecting valve 101226 is closed, the fifth connecting valve 101225 is turned on, the second main channel 101221 is connected with the third branch channel 101222, so as to introduce the second reaction gas to the head end of the second gas track 10112, the second reaction gas begins to diffuse from the head end of the second gas track 10112 to the end of the second gas track 10112, and is ejected from the spray hole 1013 during the diffusion process. The first reaction gas is diffused from the head and the end of the first gas track 10111 to the middle, thereby preventing the concentration of the first reaction gas at the end spray hole 1013 of the first gas track 10111 from being much higher than the concentration at the head spray hole 1013. Similarly, the second reaction gas is diffused from the head and the end of the second gas track 10112 to the middle, thereby preventing the concentration of the second reaction gas at the end spray hole 1013 of the second gas track 10112 from being higher than the concentration at the head spray hole 1013. The uniformity of the gas in the reaction chamber is increased, and the uniformity of the film on the surface of the wafer is increased.

[0052] by Figure 2For example, at the first moment, the third connecting valve 101215 is turned on, the fourth connecting valve 101216 is turned on, the first main line 101211 is connected to the first branch line 101212, and the first main line 101211 is connected to the second branch line 101213, so that the first reaction gas is introduced into the head end and the end of the first gas track 10111, and the first reaction gas begins to diffuse from the head end and the end of the first gas track 10111 to the middle of the first gas track 10111, and is sprayed from the spray hole 1013 during the diffusion process. out; at the second moment, the fifth connecting valve 101225 is turned on, the sixth connecting valve 101226 is turned on, the second main line 101221 is connected with the third branch line 101222, and the second main line 101221 is connected with the fourth branch line 101223, so as to introduce the second reaction gas into the head and the end of the second gas track 10112, and the second reaction gas begins to diffuse from the head and the end of the second gas track 10112 to the middle of the second gas track 10112, and is sprayed out from the spray hole 1013 during the diffusion process. The first reaction gas is diffused from the head and the end of the first gas track 10111 to the middle, thereby preventing the concentration of the first reaction gas at the end spray hole 1013 of the first gas track 10111 from being much higher than the concentration at the head spray hole 1013. Similarly, the second reaction gas is diffused from the head and the end of the second gas track 10112 to the middle, thereby preventing the concentration of the second reaction gas at the end spray hole 1013 of the second gas track 10112 from being higher than the concentration at the head spray hole 1013. The uniformity of the gas in the reaction chamber is increased, and the uniformity of the film on the surface of the wafer is increased.

[0053] Although the embodiments of the present invention are described in detail above, it is obvious to those skilled in the art that various modifications and variations can be made to these embodiments. However, it should be understood that such modifications and variations are within the scope and spirit of the present invention as described in the claims. Moreover, the present invention described herein may have other embodiments and may be implemented or realized in a variety of ways.

Claims

1. A shower head, characterized in that: It includes a spray unit and a gas supply unit, the spray unit includes at least two gas tracks, the gas tracks are arranged in parallel and spirally, and the gas track has a head end located at the center of the spray unit and a terminal located at the edge of the spray unit; a plurality of spray holes are opened on the gas track, and the gas supply unit includes gas supply pipelines corresponding to the gas tracks one by one, and the gas supply pipelines are connected to at least the head end and the terminal position of the gas track.

2. The shower head according to claim 1, characterized in that: The gas supply pipeline is configured to alternately ventilate at least the head end and the end end of the gas track.

3. The shower head according to claim 1 or 2, characterized in that: The gas supply pipeline includes a main pipeline and at least two branches, and the branches are both connected to the main pipeline.

4. The shower head according to claim 3, characterized in that: The gas supply pipeline further includes a connecting valve, the main pipeline and the branch pipeline are both connected to the connecting valve, and the connecting valve is used to control the main pipeline to be connected to any corresponding branch pipeline.

5. The shower head according to claim 3, characterized in that: The gas supply pipeline also includes connecting valves having the same number as the branch roads, and the connecting valves are arranged on the branch roads to control the on-off of the branch roads.

6. A deposition device, characterized in that: It comprises the shower head, heating unit and reaction chamber as claimed in claim 1 or 2, wherein the shower head and the heating unit are both arranged in the reaction chamber, and the shower head is located above the heating unit.

7. The deposition device according to claim 6, characterized in that The gas supply pipeline includes a main pipeline, a connecting valve and at least two branches, and the main pipeline and the branches are both connected to the connecting valve, or the gas supply pipeline includes a main pipeline, at least two branches and connecting valves of the same number as the branches, and the connecting valves are arranged on the branches.

8. A deposition method, characterized in that: include: Using the deposition device as claimed in claim 7; The connecting valve is adjusted to connect at least one of the branch lines with the corresponding main line in different time periods, and the reaction gas is introduced into at least one of the head ends or the tail ends of different gas tracks in sequence through the gas supply pipelines in different time periods.

9. The deposition method according to claim 8, characterized in that: The connecting valve is adjusted to connect at least one of the plurality of branches with the corresponding main pipeline in a first time period, so as to sequentially introduce the reaction gas to the head end or the end of different gas tracks; the branch pipeline is connected with the corresponding main pipeline in a second time period, so as to sequentially introduce the reaction gas to the other end of different gas tracks; and at least one cycle operation is performed with the sum of the first time period and the second time period as a period.

10. The deposition method according to claim 8, characterized in that: The connecting valve is adjusted to connect the branch circuit with the corresponding main circuit in different time periods, so as to sequentially introduce the reaction gas into the head end and the end end of different gas tracks.

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