Gas purging device and semiconductor equipment

Abstract

The invention discloses a gas purging device and semiconductor equipment, the gas purging device is applied to the semiconductor equipment, the semiconductor equipment comprises a reaction chamber, and the gas purging device comprises a gas inlet channel filled with gas for purging the reaction chamber; one end of the gas distributing channel is communicated with the gas inlet channel, and the gas distributing channel is used for receiving the gas conveyed by the gas inlet channel and conducting gas distributing treatment on the gas conveyed by the gas inlet channel; and the purging channel is communicated with the other end of the gas distribution channel, is arranged on one side of the reaction chamber, and is used for receiving the gas conveyed by the gas distribution channel and purging the reaction chamber by using the gas. According to the invention, the gas distribution channel is arranged between the gas inlet channel and the purging channel, so that the purging gas can flow to the purging channel more uniformly so as to purge the reaction chamber more uniformly, the uniformity of a gas flow field in the reaction chamber can be improved, and the process production quality is further improved.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor equipment, and in particular to a gas purge device and semiconductor equipment. Background Art

[0002] In the process of producing thin films in semiconductor equipment, the uniformity and cleanliness of the flow field in the reaction chamber have a significant impact on the quality of the film. For current advanced equipment, in order to ensure the uniform distribution of the flow field and maintain high cleanliness, it is usually equipped with at least one gas purge system, among which the gas purge system at the bottom of the reaction chamber is particularly critical. In other words, a well-functioning bottom gas purge system can optimize the uniformity of the flow field in the reaction chamber and help improve the cleanliness in the chamber. However, in the existing bottom purge system design, its main structure consists of an air inlet, an internal airway and an air outlet. This structural design causes the purge gas to enter the reaction chamber in a skewed manner, thereby causing uneven flow field distribution; in addition, dead zones are easily formed in areas far from the air outlet, which not only further deteriorates the uniformity of the flow field in the reaction chamber, but also the dead zone may become a gathering place for tiny particles, leading to pollution problems in the reaction chamber, which in turn affects the final film production quality. Summary of the invention

[0003] The embodiments of the present invention provide a gas purge device and a semiconductor device, aiming to improve the uniformity of the gas flow field and thus improve the process production quality.

[0004] An embodiment of the present invention provides a gas purge device, which is applied to a semiconductor device, wherein the semiconductor device includes a reaction chamber, and the gas purge device includes:

[0005] an air inlet channel filled with a gas for purging the reaction chamber;

[0006] A gas separation channel, one end of which is in communication with the air intake channel, and is used to receive the gas transported by the air intake channel and perform gas separation processing on the gas transported by the air intake channel;

[0007] The purge channel is connected to the other end of the gas separation channel and is disposed at one side of the reaction chamber for receiving the gas delivered by the gas separation channel and using the gas to purge the reaction chamber.

[0008] Furthermore, the gas separation channel includes:

[0009] an air inlet hole, connected to the air inlet passage;

[0010] A plurality of air outlet holes are provided, and one end of the plurality of air outlet holes is respectively connected to the air inlet hole, and the other end is respectively connected to the purge channel.

[0011] Furthermore, the gas separation channel is an annular channel.

[0012] Furthermore, the plurality of air outlet holes are circumferentially distributed on the annular channel.

[0013] Furthermore, the apertures of the plurality of air outlet holes are the same or different.

[0014] Furthermore, the apertures of the plurality of air outlet holes increase in sequence from near to far from the air inlet hole.

[0015] Furthermore, the air distribution channel includes a vertical air distribution branch and an annular air distribution branch, one end of the vertical air distribution branch is connected to the air inlet, and the other end is connected to the annular air distribution branch, and the other end of the annular air distribution branch is connected to the multiple air outlets respectively.

[0016] Furthermore, the gas purge device is arranged below the reaction chamber, and the gas inlet channel, gas separation channel and purge channel are arranged in sequence from bottom to top.

[0017] Furthermore, it also includes:

[0018] A heating part, disposed at the bottom of the reaction chamber and located above the air inlet channel;

[0019] A connecting pipe is vertically arranged between the heating part and the air inlet passage, and a gap is left between the connecting pipe and the heating part;

[0020] Wherein, the purge channel is formed between the heating part and the connecting pipe.

[0021] An embodiment of the present invention further provides a semiconductor device, comprising the gas purging device as described in any one of the above items.

[0022] An embodiment of the present invention provides a gas purge device and a semiconductor device, the gas purge device is applied to a semiconductor device, the semiconductor device includes a reaction chamber, the gas purge device includes: an air inlet channel, filled with a gas for purging the reaction chamber; a gas separation channel, one end of which is connected to the air inlet channel, for receiving the gas transported by the air inlet channel and performing gas separation on the gas transported by the air inlet channel; a purge channel, which is connected to the other end of the gas separation channel and is arranged on one side of the reaction chamber, for receiving the gas transported by the gas separation channel and using the gas to purge the reaction chamber. The embodiment of the present invention arranges a gas separation channel between the air inlet channel and the purge channel, so that the purge gas injected into the air inlet channel can flow to the purge channel more evenly, thereby purging the reaction chamber more evenly, thereby improving the uniformity of the gas flow field in the reaction chamber, thereby improving the process production quality. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the accompanying drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are some embodiments of the present invention. For ordinary technicians in this field, other accompanying drawings can be obtained based on these accompanying drawings without paying any creative work.

[0024] Figure 1 A schematic diagram of the structure of a gas purge device provided in an embodiment of the present invention;

[0025] Figure 2 A cross-sectional schematic diagram of a gas purge device provided in an embodiment of the present invention;

[0026] Figure 3 A schematic diagram of gas flow direction of a gas purge device provided in an embodiment of the present invention;

[0027] Figure 4 A schematic structural diagram of a gas purge device from another perspective provided by an embodiment of the present invention;

[0028] Figure 5 A flow field comparison schematic diagram of a gas purge device provided in an embodiment of the present invention;

[0029] Figure 6 A schematic diagram of flow field distribution of a gas purge device provided in an embodiment of the present invention.

[0030] Markings in the figure:

[0031] 1. Air intake channel;

[0032] 2. Gas distribution channel; 21. Air inlet; 22. Air outlet; 23. Vertical gas distribution branch; 24. Annular gas distribution branch;

[0033] 3. Purge channel;

[0034] 4. Connecting pipe. DETAILED DESCRIPTION

[0035] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0036] It should be understood that when used in this specification and the appended claims, the terms "include" and "comprises" indicate the presence of described features, integers, steps, operations, elements and / or components, but do not exclude the presence or addition of one or more other features, integers, steps, operations, elements, components and / or combinations thereof.

[0037] It should also be understood that the terms used in this specification of the present invention are only for the purpose of describing specific embodiments and are not intended to limit the present invention. As used in the specification of the present invention and the appended claims, unless the context clearly indicates otherwise, the singular forms "a", "an" and "the" are intended to include plural forms.

[0038] It should be further understood that the term "and / or" used in the present description and the appended claims refers to any and all possible combinations of one or more of the associated listed items, and includes these combinations.

[0039] See below Figure 1 and Figure 2 An embodiment of the present invention provides a gas purge device, which is applied to a semiconductor device, wherein the semiconductor device includes a reaction chamber, and the gas purge device includes:

[0040] An air inlet channel 1, filled with a gas for purging the reaction chamber;

[0041] A gas separation channel 2, one end of which is in communication with the gas intake channel 1, for receiving the gas transported by the gas intake channel 1 and performing gas separation processing on the gas transported by the gas intake channel 1;

[0042] The purge channel 3 is connected to the other end of the gas separation channel 2 and is disposed at one side of the reaction chamber for receiving the gas delivered by the gas separation channel 2 and using the gas to purge the reaction chamber.

[0043] In this embodiment, the gas purge device is arranged on one side of the reaction chamber, and the gas purge device specifically includes an air inlet channel 1, a gas separation channel 2 and a purge channel 3, wherein the air inlet channel 1 is used to introduce the purge gas and transport the purge gas to the gas separation channel 2, the gas separation channel 2 is used to perform gas separation on the purge gas so that the purge gas flows evenly from different positions to the purge channel 3, and the purge channel 3 is used to use the purge gas to perform a purge operation on the reaction chamber to ensure the uniformity and cleanliness of the flow field in the reaction chamber.

[0044] In this embodiment, a gas distribution channel 2 is set between the air inlet channel 1 and the purge channel 3, so that the purge gas injected into the air inlet channel 1 can flow to the purge channel 3 more evenly, thereby purging the reaction chamber more evenly, thereby improving the uniformity of the gas flow field in the reaction chamber and further improving the process production quality.

[0045] In an actual application scenario, the gas purge device is disposed below the reaction chamber, and the gas inlet channel 1, the gas separation channel 2 and the purge channel 3 are disposed in sequence from bottom to top.

[0046] That is, by setting the gas purge device below the reaction chamber, the purge effect of the reaction chamber can be further improved. Of course, multiple sets of the gas purge devices can be set according to actual needs, and multiple sets of gas purge devices can be set at different positions of the reaction chamber to ensure that the reaction chamber can have the maximum flow field uniformity and cleanliness. For example, if the size of the reaction chamber is large, a single set of gas purge devices may not be able to completely cover the entire chamber, resulting in insufficient flow field uniformity and cleanliness in certain areas. By installing multiple sets of gas purge devices at different positions in the reaction chamber, the reaction chamber can be fully covered to ensure that every corner can obtain a uniform purge effect. In addition, the setting of multiple sets of gas purge devices can also be personalized according to the specific process requirements in the reaction chamber, such as increasing the purge intensity in areas with heavier pollution, or using purer purge gas in areas with higher cleanliness requirements. This flexible configuration method not only improves the purge efficiency, but also optimizes the production process, thereby further improving the process production quality of semiconductor equipment.

[0047] In some optional embodiments, the gas purge device further comprises:

[0048] A heating unit, disposed at the bottom of the reaction chamber and located above the air inlet channel 1;

[0049] The connecting pipe 4 is vertically arranged between the heating part and the air inlet passage 1, and a gap is left between the connecting pipe 4 and the heating part;

[0050] The purge channel 3 is formed between the heating portion and the connecting pipe 4 .

[0051] The function of the heating part is to maintain the temperature of the gas purge device by heating, ensuring that the purge gas reaches a predetermined temperature before entering the reaction chamber. This can prevent process instability caused by temperature fluctuations, and also help to improve the cleanliness of the purge gas. Specifically, the connecting tube 4 can be a bellows, that is, the necessary elasticity is provided by the bellows to adapt to the thermal expansion or contraction caused by temperature changes in the heating part, thereby ensuring the stable operation of the device. The gap design between the connecting tube 4 and the heating part not only ensures the effective transfer of heat energy, but also avoids the concentration of thermal stress that may be caused by direct contact. Through this structural design, the gas purge device can more accurately control the temperature and flow of the purge gas, thereby providing a more stable and clean reaction environment for semiconductor equipment.

[0052] In one embodiment, if Figure 3 As shown, the gas separation channel 2 includes:

[0053] An air inlet hole 21, connected to the air inlet passage 1;

[0054] A plurality of air outlet holes 22 are provided, and one end of the plurality of air outlet holes 22 is respectively connected to the air inlet hole 21 , and the other end is respectively connected to the purge channel 3 .

[0055] The gas distribution channel 2 distributes and adjusts the purge gas through an air inlet 21 and a plurality of air outlets 22, so that the purge gas can flow evenly into the purge channel 3. Specifically, the air inlet 21 serves as the entrance for the purge gas to enter the gas distribution channel 2, so that the purge gas can flow into the gas distribution channel 2. The plurality of air outlets 22 provide a plurality of dispersed outlets for the purge gas, so that the purge gas can be evenly distributed in the purge channel 3, thereby achieving uniform coverage of the reaction chamber during the purge process. This design not only improves the purge efficiency, but also helps to reduce the turbulence and unevenness of the gas during the purge process, ensuring the uniform distribution of the purge gas in the reaction chamber. Preferably, in some scenarios, the opening of each air outlet 22 can be adjusted to further accurately control the flow rate of the purge gas to meet different process requirements, thereby providing a more accurate and stable purge effect for semiconductor equipment.

[0056] In a specific embodiment, the gas separation channel 2 is an annular channel.

[0057] Combination Figure 4 Accordingly, the plurality of air outlet holes 22 are circumferentially distributed on the annular channel.

[0058] By setting the gas distribution channel 2 to be annular, the purge gas can be evenly distributed to each gas outlet 22 along the annular path, thereby ensuring the uniform distribution of the purge gas in the reaction chamber. And based on the annular channel, not only the stability of the gas flow is improved, but also the pressure loss during the gas flow process is reduced. In addition, Figure 4 As shown, a plurality of air outlet holes 22 are provided to be distributed circumferentially on the annular channel, so that the purge gas can cover the reaction chamber more comprehensively, reduce the dead angle area, and thus improve the purge efficiency and effect. In practical applications, this design can effectively reduce the gas waste that may occur during the purge process, while ensuring the uniformity and consistency of the purge. Specifically, the air outlet holes 22 can be provided with 4, and the 4 air outlet holes 22 are distributed circumferentially on the annular channel. Of course, fewer or more air outlet holes 22 can be provided according to actual needs.

[0059] In one embodiment, the apertures of the plurality of air outlet holes 22 are the same or different. Specifically, the apertures of the plurality of air outlet holes 22 increase in order from near to far from the air inlet hole 21 .

[0060] By adjusting the aperture size of the air outlet 22, the distribution characteristics of the gas flow can be further optimized. For example, when the aperture of the air outlet 22 gradually increases from near to far, the gas flow rate released by the air outlet 22 closer to the air inlet 21 can be relatively small, while the gas flow rate released by the air outlet 22 far away from the air inlet 21 is relatively large. In this way, the flow conductance at the outlet end can be balanced, thereby further improving the uniformity of the purge gas entering the purge channel 3, and can also solve the problem of pressure attenuation of the gas during the flow process, ensuring that the gas can still maintain sufficient flow rate and pressure when it reaches the far end of the reaction chamber, thereby achieving a more uniform purge effect in the entire reaction chamber. In addition, based on the air outlet 22 with different apertures, the possibility of turbulence inside the reaction chamber due to excessive gas flow rate can also be reduced, which helps to reduce noise and vibration and improve the overall stability and service life of the equipment. In practical applications, through precise calculation and simulation, the optimal aperture distribution can be determined to meet the purge requirements under specific process conditions.

[0061] In another specific embodiment, the gas separation channel 2 includes a vertical gas separation branch 23 and an annular gas separation branch 24, one end of the vertical gas separation branch 23 is connected to the air inlet 21, and the other end is connected to the annular gas separation branch 24, and the other end of the annular gas separation branch 24 is respectively connected to multiple air outlet holes 22.

[0062] This embodiment connects the air inlet 21 with each air outlet 22 through the vertical air distribution branch 23 and the annular air distribution branch 24 to achieve a more accurate and efficient gas distribution effect. Specifically, the vertical air distribution branch 23 can enable the purge gas to be quickly dispersed into the annular air distribution branch 24 after entering from the air inlet 21, while the annular air distribution branch 24 can ensure that the purge gas can obtain a uniform flow velocity and pressure before reaching the air outlet 22. This structure not only improves the utilization rate of the gas, but also reduces the potential damage risk caused by uneven gas flow, such as impact or wear on the internal structure of the reaction chamber. In addition, by conveying and distributing the purge gas through the vertical air distribution branch 23 and the annular air distribution branch 24, the overall gas purge device can also maintain a low noise level during operation, providing a quieter working environment for the operator.

[0063] An embodiment of the present invention further provides a semiconductor device, comprising the gas purging device as described in any one of the above items.

[0064] Combination Figure 5 and Figure 6 ,in, Figure 5 is a schematic diagram of a gas flow field without using the gas purge device described in this embodiment, Figure 6 FIG. 1 is a schematic diagram of a gas flow field of the gas purge device according to this embodiment. Figure 5 and Figure 6 It can be seen that the uniformity of the gas flow field in the reaction chamber using the gas purge device described in this embodiment is significantly higher than that in the reaction chamber not using the gas purge device described in this embodiment. In other words, after using the gas purge device described in this embodiment, the gas flow field distribution in the reaction chamber is greatly improved. For example, Figure 5 The eccentric shape optimization is Figure 6 of ring shape, and from Figure 5 and Figure 6 As can be seen from the figure, the velocity contours are Figure 5 The 7.47 Figure 6 The gas purge device described in this embodiment can greatly improve the uniformity of the gas flow field in the reaction chamber.

[0065] The various embodiments in the specification are described in a progressive manner, and each embodiment focuses on the differences from other embodiments. The same and similar parts between the various embodiments can be referred to each other. For the system disclosed in the embodiment, since it corresponds to the method disclosed in the embodiment, the description is relatively simple, and the relevant parts can be referred to the method part description. It should be pointed out that for ordinary technicians in this technical field, without departing from the principles of this application, several improvements and modifications can be made to the present application, and these improvements and modifications also fall within the scope of protection of the claims of this application.

[0066] It should also be noted that, in this specification, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "comprises", "comprising" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, an element defined by the statement "comprising a ..." does not exclude the presence of other identical elements in the process, method, article or device including the element.

Claims

1. A gas purge device, applied to a semiconductor device, wherein the semiconductor device comprises a reaction chamber, characterized in that: The gas purge device comprises: an air inlet channel filled with a gas for purging the reaction chamber; A gas separation channel, one end of which is in communication with the air intake channel, and is used to receive the gas transported by the air intake channel and perform gas separation processing on the gas transported by the air intake channel; The purge channel is connected to the other end of the gas separation channel and is disposed at one side of the reaction chamber for receiving the gas delivered by the gas separation channel and using the gas to purge the reaction chamber.

2. The gas purge device according to claim 1, characterized in that: The gas separation channel comprises: an air inlet hole, connected to the air inlet passage; A plurality of air outlet holes are provided, and one end of the plurality of air outlet holes is respectively connected to the air inlet hole, and the other end is respectively connected to the purge channel.

3. The gas purge device according to claim 2, characterized in that: The gas separation channel is an annular channel.

4. The gas purge device according to claim 3, characterized in that: The plurality of air outlet holes are circumferentially distributed on the annular channel.

5. The gas purge device according to claim 4, characterized in that: The apertures of the plurality of air outlet holes are the same or different.

6. The gas purge device according to claim 5, characterized in that: The apertures of the plurality of air outlet holes increase in sequence from near to far from the air inlet hole.

7. The gas purge device according to claim 4, characterized in that: The gas distribution channel includes a vertical gas distribution branch and an annular gas distribution branch. One end of the vertical gas distribution branch is connected to the air inlet, and the other end is connected to the annular gas distribution branch. The other end of the annular gas distribution branch is connected to the multiple air outlets respectively.

8. The gas purge device according to claim 1, characterized in that: The gas purge device is arranged below the reaction chamber, and the air inlet channel, the gas separation channel and the purge channel are arranged in sequence from bottom to top.

9. The gas purge device according to claim 8, characterized in that: Also includes: A heating part, disposed at the bottom of the reaction chamber and located above the air inlet channel; A connecting pipe is vertically arranged between the heating part and the air inlet passage, and a gap is left between the connecting pipe and the heating part; Wherein, the purge channel is formed between the heating part and the connecting pipe.

10. A semiconductor device, characterized in that: It comprises a gas purge device as described in any one of claims 1 to 9.

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