Heating disc and thin film deposition equipment

Abstract

The invention provides a heating disc and thin film deposition equipment, the heating disc comprises a main shell and an air pipe, a heating space is arranged in the main shell, a plurality of vent holes penetrating to the heating space are formed in the upper end face of the main shell close to the edge of the main shell, and a through hole penetrating to the heating space is formed in the lower end face of the main shell; one end of the air pipe penetrates through the through hole to communicate with the heating space; wherein airflow with temperature enters the heating space along the air pipe and flows to the back side of the wafer through the plurality of vent holes. According to the application, the plurality of vent holes are designed at the edge of the upper end surface of the main shell, and the airflow with temperature is introduced into the heating space through the air pipe, so that the airflow is blown away from the plurality of vent holes to the back side of the wafer, and the wafer is directly heated, so that the heating temperature of the edge area of the heating disc is kept consistent with the heating temperature of other areas; therefore, the temperature uniformity of the heating disc is improved, the heating temperature of the whole wafer is ensured to be uniform, and the overall heating effect of the wafer is improved.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor production, and in particular to a heating plate and a thin film deposition device. Background Art

[0002] In semiconductor production technology, thin film deposition technology is one of the important and key technologies. Through thin film deposition equipment, a variety of reaction gases are introduced into its internal reaction chamber to react on the surface of the wafer and deposit layers of thin films, thereby creating micro devices inside the chip.

[0003] In semiconductor thin film deposition equipment, the heating plate is one of the important components. The wafer is placed on the heating plate so that the heating plate can quickly and evenly heat the wafer, thereby ensuring that the thin film can obtain a stable temperature environment when deposited on the wafer surface. In addition, the heating plate also has the function of ensuring the precise control of process parameters and improving the efficiency and quality of thin film deposition. At present, due to the influence of factors such as the tiny gap between the actual contact between the heating plate and the back of the wafer, the poor arrangement and resistance uniformity of the heating wires of the heating plate, and the difference between the heat dissipation interface in the direction of the wafer transfer channel and other areas, the overall temperature uniformity of the heating plate is poor, thereby affecting the overall heating effect of the wafer. Summary of the invention

[0004] Embodiments of the present invention provide a heating plate and a thin film deposition device to improve the temperature uniformity of the heating plate, thereby improving the overall heating effect on the wafer.

[0005] The present invention provides a heating plate, comprising:

[0006] A main shell, wherein a heating space is provided inside the main shell, a plurality of vents penetrating to the heating space are provided near the edge of the upper end surface of the main shell, and a through hole penetrating to the heating space is provided on the lower end surface of the main shell;

[0007] an air pipe, one end of which passes through the through hole and communicates with the heating space;

[0008] The heated air flow enters the heating space along the air pipe and flows toward the back side of the wafer through the plurality of air holes.

[0009] In the heating plate provided by the present invention, the plurality of ventilation holes are spaced apart along the circumferential direction of the main shell and are evenly arranged on the main shell.

[0010] In the heating plate provided by the present invention, the main shell is provided with two groups of ventilation holes, and the two groups of ventilation holes are arranged at intervals along the radial direction of the main shell.

[0011] In the heating plate provided by the present invention, the heating plate comprises a plurality of mutually independent air pipes, the heating space comprises a plurality of mutually unconnected partitions, and each of the partitions is extended from the center of the main shell toward the edge thereof, and one partition is correspondingly connected to one air pipe;

[0012] The hot air flow enters the plurality of partitions along the plurality of air pipes respectively, and flows toward the back side of the wafer through the through holes of each of the partitions.

[0013] In the heating plate provided by the present invention, the heating space includes four partitions, and the four partitions are in a quadrant structure.

[0014] In the heating plate provided by the present invention, the main shell is provided with an isolating portion, the isolating portion is located in the heating space, and the isolating portion extends from the upper end of the main shell toward the lower end thereof, for isolating two adjacent partitions.

[0015] In the heating plate provided by the present invention, the heating plate further comprises a plurality of pressure control units, and one of the pressure control units is fixedly connected to one of the air pipes to control the temperature and flow rate of the airflow.

[0016] In the heating plate provided by the present invention, the heating plate further comprises a lower shell with a hollow interior, one end of the lower shell is fixedly connected to the lower end of the main shell, the other end extends in a direction away from the main shell, and the interior of the lower shell is communicated with the through hole;

[0017] Among them, one end of the air pipe passes through the interior of the lower shell and the through hole from the other end of the lower shell to enter the heating space.

[0018] In the heating plate provided by the present invention, the heating plate further comprises heating wires, and the heating wires are evenly fixed in the heating space.

[0019] The present invention also provides a thin film deposition device, which comprises the heating plate described in any one of the above items.

[0020] The present application designs a plurality of air vents at the edge of the upper end surface of the main shell of the heating plate, and introduces a heated air flow into the heating space through the air pipe, so that the heated air flow is blown from the plurality of air vents toward the back side of the wafer, thereby directly heating the wafer, so that the heating temperature of the edge area of ​​the heating plate is consistent with the heating temperature of other areas, thereby improving the temperature uniformity of the heating plate, and further ensuring the uniformity of the heating temperature of the entire wafer, improving the overall heating effect of the wafer, and improving the quality of thin film deposition on the wafer surface. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the accompanying drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are some embodiments of the present invention. For ordinary technicians in this field, other accompanying drawings can be obtained based on these accompanying drawings without paying any creative work.

[0022] Figure 1a-1d 1. The present invention is a schematic diagram of the structure of the heating plate in the embodiment of the present invention;

[0023] Figure 2 is a cross-sectional view of a heating plate according to an embodiment of the present invention;

[0024] The reference numerals in the figures are:

[0025] 1. Main shell; 11. Vent hole; 12. Partition; 2. Air pipe; 3. Lower shell. DETAILED DESCRIPTION

[0026] It should be noted that, in the absence of conflict, the embodiments and features in the embodiments of the present application can be combined with each other. Now, in conjunction with the accompanying drawings, the preferred embodiments of the present invention are described in detail.

[0027] Reference Figure 1a to Figure 2 As shown, it shows an embodiment of the heating plate of the present invention. The heating plate comprises a main shell 1 and an air pipe 2, wherein a heating space is provided inside the main shell 1, a plurality of vents 11 penetrating to the heating space are provided near the edge of the upper end surface of the main shell 1, and a through hole penetrating to the heating space is provided on the lower end surface of the main shell 1; one end of the air pipe 2 passes through the through hole to communicate with the heating space; wherein the air flow with temperature enters the heating space along the air pipe 2 and flows to the back side of the wafer through the plurality of vents 11.

[0028] Specifically, the heating plate is mainly used in semiconductor thin film deposition equipment. The wafer enters the reaction chamber of the thin film deposition equipment through a valve under an external vacuum environment and is placed on the heating plate so that the heating plate can heat the wafer, maintain the stability of the wafer surface temperature, and ensure that the airflows with various reaction temperatures react in a stable environment to deposit layers of thin films on the wafer surface, while improving the thin film deposition efficiency; the heating plate includes a main shell 1 and an air pipe 2. The main shell 1 is the basic structural component of the heating plate, carrying the entire heating system and providing a surface that directly or indirectly contacts the wafer, that is, the wafer is placed on the upper end surface of the main shell 1, and the upper end surface of the main shell 1 transfers the heat generated by the heating plate to the wafer; the main shell 1 is usually made of high temperature resistant and high thermal conductivity materials to ensure stable and uniform heat transfer during the thin film deposition process.

[0029] In this embodiment, the main shell 1 is a circular structure, and a heating space is provided inside the main shell 1. The heating space is extended along the circumference of the main shell 1, that is, the heating space is a circular structure, and the diameter of the heating space is greater than or equal to the diameter of the wafer, so that when the internal structural parts of the heating space are heated or a high-temperature airflow is passed into the heating space, the entire heating space can be heated, and the upper end surface of the main shell 1 transfers the heat to the wafer; the main shell 1 is also provided with a plurality of ventilation holes 11, and the ventilation holes 11 are provided on the upper end surface of the main shell 1 and close to the edge of the main shell 1, and the plurality of ventilation holes 11 are provided along the main shell 1. The vent holes 11 are arranged at circumferential intervals and pass downward from the upper end surface of the main shell 1 to the heating space. When a wafer is placed on the upper end surface of the main shell 1, a heated airflow can flow from the heating space to the back side of the wafer in the direction of the vent holes 11, thereby further heating the wafer. At the same time, a through hole is provided on the lower end surface of the main shell 1, and the through hole passes through the lower end surface of the main shell 1 and the heating space. The through hole is used to avoid the air pipe 2 so that one end of the air pipe 2 can pass through the through hole from the outside of the main shell 1 into the heating space. The air pipe 2 is connected to the heating space, thereby introducing the heated airflow into the heating space.

[0030] When the heating plate is started, the heating space generates heat, and a heated air flow enters the heating space along the air pipe 2, flows in the heating space, and flows toward the edge of the main shell 1 until it flows out of the heating space through the vent 11 and flows toward the back side of the wafer, thereby improving the heating effect of the wafer.

[0031] In particular, the temperature of the introduced air flow is not limited, and hot air or cold air can be introduced into the heating space, and the temperature of the air flow is determined by the difference between the heating temperature of the edge area of ​​the heating disk and the heating temperature of other areas. For example, when the heating temperature of the edge area of ​​the heating disk is lower than the heating temperature of other areas, hot air can be introduced into the heating space, and the hot air is blown toward the back of the wafer through the air vent 11 to increase the heating temperature of the edge area of ​​the heating disk, and the hot air is directly blown from the air vent 11 to the edge position of the wafer, thereby improving the uniformity of the heating temperature of the wafer, so as to improve the heating effect of the heating disk on the wafer; conversely, when the heating temperature of the edge area of ​​the heating disk is higher than the heating temperature of other areas, cold air can be introduced toward the heating connection through the air pipe 2 to reduce the heating temperature of the edge area of ​​the heating disk, and the cold air is directly blown from the air vent 11 to the edge position of the wafer, thereby improving the uniformity of the heating temperature of the wafer, so as to improve the heating effect of the heating disk on the wafer.

[0032] The present application designs a plurality of air vents 11 at the edge of the upper end surface of the main shell 1 of the heating plate, and introduces a heated airflow into the heating space through the air pipe 2, so that the heated airflow is blown from the plurality of air vents 11 toward the back side of the wafer, thereby directly heating the wafer, so that the heating temperature of the edge area of ​​the heating plate is consistent with the heating temperature of other areas, thereby improving the temperature uniformity of the heating plate, and further ensuring the uniformity of the heating temperature of the entire wafer, improving the overall heating effect of the wafer, and improving the quality of thin film deposition on the wafer surface.

[0033] More specifically, the through hole is arranged at the center of the lower end surface of the main shell 1, and the air pipe 2 is passed into the heating space through the through hole. Therefore, the airflow introduced into the heating space by the air pipe 2 flows to each of the air holes 11 at the same time, ensuring that the overall heating temperature of the heating plate is uniform and the heating rate of the wafer is consistent, thereby improving the heating effect of the heating plate.

[0034] In one embodiment, referring to Figure 1a to Figure 2 As shown, a plurality of the vent holes 11 are spaced and evenly arranged along the circumference of the main shell 1. Specifically, the vent holes 11 are used to connect the upper end of the main shell 1 and the heating space, so that the air flow with temperature flows toward the upper end of the main shell 1 through the vent holes 11 to directly contact the wafer, thereby improving the heating efficiency; there are a plurality of the vent holes 11, and the plurality of the vent holes 11 are spaced and evenly arranged along the circumference of the main shell 1, that is, the plurality of the vent holes 11 are spaced and arranged along the circumference of the main shell 1 near its edge, so that the edge area of ​​the main shell 1 is provided with the vent holes 11, so as to ensure that the heating temperature of the edge area is consistent with the heating temperature of the middle area, so that the overall temperature uniformity of the heating plate is high, and the structural stability of the heating plate is high.

[0035] In a specific embodiment, refer to Figure 1a to Figure 2As shown, the main shell 1 is provided with two groups of the vent holes 11, and the two groups of the vent holes 11 are arranged at intervals along the radial direction of the main shell 1. Specifically, the main shell 1 is provided with two groups of the vent holes 11, each group of the vent holes 11 includes a plurality of the vent holes 11, that is, the plurality of the vent holes 11 in each group of the vent holes 11 are arranged at intervals along the circumference of the main shell 1, and the two groups of the vent holes 11 are arranged at intervals along the radial direction of the main shell 1, that is, one group of the vent holes 11 is arranged close to the edge of the main shell 1, and the other group is arranged at intervals from the previous group of the vent holes 11 in the direction close to the center of the main shell 1, and the two groups of the vent holes 11 are located in the edge area of ​​the main shell 1, so that more airflow flows to the back side of the wafer, further improving the uniformity of the heating temperature of the heating plate and the heating efficiency. At the same time, the structural stability of the main shell 1 is higher.

[0036] In one embodiment, referring to Figure 1a to Figure 2 As shown, the heating plate includes a plurality of independent air pipes 2, the heating space includes a plurality of partitions 12 that are not interconnected, and each of the partitions 12 is extended from the center of the main shell 1 toward its edge, and one partition 12 is correspondingly connected to one air pipe 2; wherein, the heated airflow enters the plurality of partitions 12 along the plurality of air pipes 2 respectively, and flows to the back side of the wafer through the through holes of each partition 12. Specifically, the heating plate includes a plurality of air pipes 2, and the plurality of air pipes 2 are independently controlled, that is, the temperature and flow rate of the airflow entering different air pipes 2 are independently controlled, so the temperature and flow rate of the airflow flowing in different air pipes 2 can be determined according to the heating temperature of each area of ​​the heating plate; the heating space is divided into a plurality of partitions 12 that are not interconnected, and each partition 12 is connected to an air pipe 2 to ensure that the airflow can be evenly distributed to each partition 12, so that by controlling the temperature and flow rate of the airflow entering different air pipes 2, the heating temperature of each partition 12 can be independently controlled, thereby achieving more precise temperature control; and each partition 12 is extended from the center of the main shell 1 toward the edge of the main shell 1, that is, the shape of each partition 12 is similar to a fan-shaped or radial layout, so as to better cover the bottom of the wafer, and the number and shape of the partitions 12 can be adjusted according to the size of the wafer and the heating requirements, so as to achieve the best heating effect, and at the same time, the number of the partitions 12 corresponds to the number of the air pipes 2.

[0037] When the heating plate is started, heated airflow is introduced into the multiple air pipes 2 respectively, and the airflow enters the multiple partitions 12 respectively from the multiple air pipes 2, and flows along the extension direction of the partition 12 toward the position of the vent 11 until it passes through the vent 11 and is blown toward the back side of the wafer.

[0038] In this embodiment, the heating space is divided into a plurality of mutually unconnected partitions 12, and each of the partitions 12 is connected to a different air pipe 2. By controlling the temperature and flow rate of the airflow in each air pipe separately, the temperature of each partition 12 can be independently controlled, thereby more accurately regulating the heating temperature of the heating plate, improving the temperature uniformity of the heating plate, and improving the heating effect.

[0039] In a specific embodiment, refer to Figure 1c As shown, the heating space includes four partitions 12, and the four partitions 12 are in a quadrant structure. Specifically, the heating space is divided into four partitions 12, and the four partitions 12 are in a quadrant structure, that is, the center of the main shell 1 is taken as the midpoint, and the horizontal axis and the vertical axis of the main shell 1 are used to divide the structure into four areas. The four partitions 12 in the quadrant structure can adapt to wafers of different sizes and shapes to better heat the wafers; at the same time, the four partitions 12 are set as a quadrant structure to facilitate the maintenance and cleaning of the heating space.

[0040] Therefore, the heating space is precisely divided into four partitions 12, and each partition 12 occupies a 90° fan-shaped area, which facilitates the production of the heating plate, and the heating plate has high structural stability; at the same time, the four partitions 12 are respectively connected to the four air pipes 2, and the four air pipes 2 are used to transport the heated or cooled airflow to the corresponding partitions 12, so that each partition 12 is independently temperature controlled, thereby achieving a finer temperature distribution, so that the temperature difference on the heating plate can be compensated to improve the uniformity of the heating temperature of the heating plate.

[0041] In one embodiment, the main shell 1 is provided with an isolation portion (not shown in the figure), which is located in the heating space and extends from the upper end of the main shell 1 toward the lower end thereof, for isolating two adjacent partitions 12. Specifically, the heating space is divided into a plurality of partitions 12, so that the heating temperatures of different partitions 12 are independently controlled. In this embodiment, an insulating portion is provided on the main shell 1, and the insulating portion extends from the upper end of the main shell 1 through the heating space to the lower end of the main shell 1, thereby performing an isolation effect in two adjacent partitions 12 to avoid mutual communication between two adjacent partitions 12, so that each partition 12 is located in an independent area. When the airflow flows into different partitions 12 from different air pipes 2, it can flow in the corresponding partition 12, and finally flow toward the back side of the wafer toward the plurality of air vents 11 corresponding to the partition 12 to heat or cool the wafer, so that the heating temperature of each partition 12 and the airflow temperature flowing to different positions on the back side of the wafer can be accurately controlled to improve the uniformity of the overall heating temperature of the heating plate and the uniformity of the overall temperature of the wafer, thereby improving product quality.

[0042] The insulating portion has a simple structure and low production cost, and can be integrally formed with the main shell 1 to improve the structural strength of the main shell 1 .

[0043] More specifically, the insulating portion extends from one end edge of the main housing 1 to the other end edge along the radial direction of the main housing 1. That is, the plane where the insulating portion is located is the plane where the diameter of the main housing 1 is located, and the main housing 1 has a simple structure and is easy to produce.

[0044] In a specific embodiment, the heating plate further includes a plurality of pressure control units (not shown in the figure), and one of the pressure control units is fixedly connected to one of the air pipes 2 to control the temperature and flow rate of the airflow. Specifically, the heating plate further includes a plurality of pressure control units, and the pressure control units are used to accurately control the temperature and flow rate of the airflow entering the air pipe 2. Each of the pressure control units is correspondingly fixed on each of the air pipes 2, and each of the pressure control units is independent and can independently adjust the temperature and flow rate of the airflow in the connected air pipe 2. At the same time, the plurality of pressure control units can work together to achieve uniform distribution of the airflow temperature and flow rate in the entire heating plate.

[0045] Therefore, the air flow temperature and flow rate within the multiple partitions 12 are independently regulated by the multiple pressure control units, which can significantly improve the control accuracy and stability of the air flow temperature and flow rate, improve the performance and quality of the heating plate, and reduce maintenance costs and failure rates.

[0046] In one embodiment, referring to Figure 1a to Figure 2 As shown, the heating plate also includes a lower shell 3 with a hollow interior, one end of the lower shell 3 is fixedly connected to the lower end of the main shell 1, and the other end extends in a direction away from the main shell 1, and the interior of the lower shell 3 is connected to the through hole; wherein, one end of the air pipe 2 passes through the interior of the lower shell 3 and the through hole from the other end of the lower shell 3 to enter the heating space. Specifically, the heating plate also includes a lower shell 3, which is configured as an internally hollow cylindrical structure. The lower shell 3 is used to protect the circuit passing into the heating space and the air pipe 2, other pipelines and other structural parts, and the lower shell 3 is also used to support the main shell 1; one end of the lower shell 3 is fixedly connected to the lower end of the main shell 1, and the other end extends vertically in a direction away from the main shell 1, so as to better support the main shell 1; at the same time, both ends of the lower shell 3 and the internal hollow structure are connected to the through hole, that is, the lower shell 3 is arranged around the outside of the through hole, and the other end of the lower shell 3 to one end of the lower shell 3 and the through hole form a channel for accommodating the circuit passing into the heating space and the air pipe 2, other pipelines The air pipe 2 is a structure of a main shell 1 and a main housing 1. One end of the air pipe 2 passes through the lower shell 3 from the end of the lower shell 3 away from the main shell 1, and extends along the height direction of the main shell 1. After passing through the end of the lower shell 3 connected to the main shell 1, it passes through the through hole and enters the heating space, so that the air flow can flow into the heating space along the air pipe 2; except for the air pipe 2, other circuits, other pipelines and other structural parts to be passed into the heating space are arranged in the same way as the air pipe 2 and enter the heating space from the outside of the main shell 1 and the lower shell 3; thereby, the circuits, the air pipe 2, other pipelines and other structural parts passing into the heating space are protected inside the lower shell 3 to avoid damage, and the integration is high, the line confusion is avoided, and the structural stability of the heating plate is improved.

[0047] In a specific embodiment, the heating plate further includes a heating wire (not shown in the figure), and the heating wire is evenly fixed in the heating space. Specifically, the heating plate further includes a heating wire, and the heating wire is used to heat the main shell 1, so that the heat generated by the heating wire is transferred to the wafer. The heating wire is evenly fixed in the heating space, so as to protect the heating wire and avoid the heating wire being exposed to the outside and damaged, while improving the safety of the heating plate. Furthermore, the heating space is a closed space, so the heat generated by the heating wire can be more transferred to the wafer, thereby improving the heating efficiency of the heating plate; the heating wire is evenly arranged in the heating space, so that the heating range of the heating wire is uniform, and the uniformity of the heating temperature of the heating plate is improved, so as to improve the temperature uniformity of the wafer and improve the heating effect.

[0048] This embodiment also provides a thin film deposition device (not shown in the figure), which includes a heating plate. The heating plate can adopt any heating plate provided by the present invention. Since the specific structure and working principle of the heating plate have been introduced in detail in the previous description, they will not be repeated here for the sake of conciseness of the description.

[0049] The thin film deposition equipment in this embodiment adopts the heating plate provided by the present invention. The heating temperature of the heating plate is highly uniform, so that the overall temperature of the wafer is uniform and the heating effect is good. Therefore, the thin film deposited on the surface of the wafer by the thin film deposition equipment is highly uniform, thereby improving product quality.

[0050] The above is only a specific embodiment of the present invention, but the protection scope of the present invention is not limited thereto. Any technician familiar with the technical field can easily think of various equivalent modifications or replacements within the technical scope disclosed by the present invention, and these modifications or replacements should be included in the protection scope of the present invention. Therefore, the protection scope of the present invention shall be based on the protection scope of the claims.

Claims

1. A heating plate, characterized in that: include: A main shell, wherein a heating space is provided inside the main shell, a plurality of vents penetrating to the heating space are provided near the edge of the upper end surface of the main shell, and a through hole penetrating to the heating space is provided on the lower end surface of the main shell; an air pipe, one end of which passes through the through hole and communicates with the heating space; The heated air flow enters the heating space along the air pipe and flows toward the back side of the wafer through the plurality of air holes.

2. The heating plate according to claim 1, characterized in that: The plurality of vent holes are spaced apart along the circumferential direction of the main housing and are evenly arranged on the main housing.

3. The heating plate according to claim 2, characterized in that: The main shell is provided with two groups of ventilation holes, and the two groups of ventilation holes are arranged at intervals along the radial direction of the main shell.

4. The heating plate according to claim 1, characterized in that: The heating plate includes a plurality of mutually independent air pipes, the heating space includes a plurality of mutually unconnected partitions, and each of the partitions is extended from the center of the main shell toward the edge thereof, and one partition is correspondingly connected to one air pipe; The hot air flow enters the plurality of partitions along the plurality of air pipes respectively, and flows toward the back side of the wafer through the through holes of each of the partitions.

5. The heating plate according to claim 4, characterized in that: The heating space includes four partitions, and the four partitions are in a quadrant structure.

6. The heating plate according to claim 4, characterized in that: The main shell is provided with an isolating portion, which is located in the heating space and extends from the upper end of the main shell toward the lower end thereof, and is used to isolate two adjacent partitions.

7. The heating plate according to claim 4, characterized in that: The heating plate further comprises a plurality of pressure control units, one of the pressure control units being fixedly connected to one of the air pipes to control the temperature and flow rate of the air flow.

8. The heating plate according to claim 1, characterized in that: The heating plate further comprises a lower shell with a hollow interior, one end of the lower shell is fixedly connected to the lower end of the main shell, the other end extends in a direction away from the main shell, and the interior of the lower shell is communicated with the through hole; Among them, one end of the air pipe passes through the interior of the lower shell and the through hole from the other end of the lower shell to enter the heating space.

9. The heating plate according to any one of claims 1 to 8, characterized in that: The heating plate further comprises heating wires, and the heating wires are evenly fixed in the heating space.

10. A thin film deposition device, characterized in that: The heating plate comprises the heating plate according to any one of claims 1 to 9.

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