Gallium nitride manufacturing device and method

Abstract

The invention relates to the field of gallium nitride, and provides a gallium nitride manufacturing device and method. The gallium nitride manufacturing device comprises a chamber structure used for accommodating a substrate loaded with gallium-based liquid metal; the nitrogen source supply device is connected with the cavity structure and is used for introducing nitrogen source gas into the cavity structure; and the electromagnetic wave device is connected with the cavity structure, and the electromagnetic wave device is used for emitting electromagnetic waves into the cavity structure, so that the gallium-based liquid metal is discharged in response to the electromagnetic waves. The gallium nitride manufacturing device provided by the invention can utilize the discharge phenomenon of gallium-based liquid metal in electromagnetic waves to promote ionization of nitrogen source gas to generate nitrogen plasma under the conditions of low working temperature and low working air pressure. The nitrogen plasma reacts with gallium in the gallium-based liquid metal to generate gallium nitride, so that the temperature condition and the pressure condition for manufacturing the gallium nitride are easier to realize, and the manufacturing difficulty and the manufacturing cost of the gallium nitride can be reduced.

Description

Technical Field

[0001] The present invention relates to the technical field of gallium nitride, and in particular to a gallium nitride manufacturing device and method. Background Art

[0002] Gallium nitride (GaN), as a typical representative of the third-generation semiconductor materials, has the characteristics of large bandgap, high thermal conductivity, small dielectric constant, and strong radiation resistance. It has very broad application advantages and development prospects in the fields of microelectronics and optoelectronics, such as being used to prepare light-emitting diodes, ultraviolet detectors, high-temperature and high-power electronic devices, and high-frequency microwave devices.

[0003] In the prior art, gallium nitride is usually prepared by heteroepitaxial technology. Specifically, heteroepitaxial technology usually uses high-temperature ammonia as a nitrogen source, sapphire and silicon carbide as substrates, and maintains a certain ammonia pressure under a temperature of thousands of degrees Celsius to grow gallium nitride single crystals on the substrate. For example, commonly used methods of heteroepitaxial technology include conventional metal-organic chemical vapor deposition (MOCVD).

[0004] As mentioned above, the preparation method of gallium nitride in the prior art requires a reaction temperature of thousands of degrees Celsius and has harsh preparation conditions, which makes the manufacture of gallium nitride more difficult and more costly. Summary of the invention

[0005] The present invention provides a gallium nitride manufacturing device and method, which are used to solve the defects of the prior art that the reaction temperature for preparing gallium nitride is high, resulting in greater difficulty and higher manufacturing cost of gallium nitride, and achieve the effect of reducing the difficulty and cost of manufacturing gallium nitride.

[0006] The present invention provides a gallium nitride manufacturing device, comprising:

[0007] A chamber structure, the chamber structure being used to accommodate a substrate carrying a gallium-based liquid metal;

[0008] A nitrogen source supply device, the nitrogen source supply device is connected to the chamber structure and is used to introduce nitrogen source gas into the chamber structure;

[0009] An electromagnetic wave device is connected to the chamber structure and is used to emit electromagnetic waves into the chamber structure so that the gallium-based liquid metal discharges in response to the electromagnetic waves.

[0010] A gallium nitride manufacturing device according to the present invention further includes a cover structure, the cover structure is arranged inside the chamber structure, the cover structure is connected to the chamber structure, an opening is provided at the bottom of the cover structure, the cover structure is used to be arranged above the substrate, and the opening faces the substrate;

[0011] And / or, the gallium nitride manufacturing device further includes a supporting platform, wherein the supporting platform is disposed in the chamber structure, and the supporting platform is used to support the substrate.

[0012] According to a gallium nitride manufacturing device provided by the present invention, a semiconductor structure for carrying gallium-based liquid metal is deposited on the surface of the substrate.

[0013] According to a gallium nitride manufacturing device provided by the present invention, the supporting platform is configured as a lifting platform.

[0014] The present invention also provides a gallium nitride manufacturing method, comprising:

[0015] Adding gallium-based liquid metal to the surface of the substrate;

[0016] placing the substrate into a chamber structure;

[0017] emitting electromagnetic waves into the chamber structure so that the gallium-based liquid metal discharges in response to the electromagnetic waves;

[0018] A nitrogen source gas is introduced into the chamber structure at least during the period of emitting electromagnetic waves to the chamber structure.

[0019] According to a gallium nitride manufacturing method provided by the present invention, a gallium-based liquid metal is added to the surface of a substrate, comprising:

[0020] A semiconductor structure is arranged on the surface of the substrate, and gallium-based liquid metal is added onto the semiconductor structure on the surface of the substrate.

[0021] According to a gallium nitride manufacturing method provided by the present invention, after introducing nitrogen source gas into the chamber structure, the method further comprises:

[0022] The gallium nitride film on the substrate is peeled off and transferred to the substrate by bonding and separating the substrate with the surface of the base to which the gallium-based liquid metal is added.

[0023] According to a gallium nitride manufacturing method provided by the present invention, a substrate is attached to and separated from a surface of a base to which the gallium-based liquid metal is added, comprising:

[0024] A semiconductor structure is arranged on the surface of the substrate, and the semiconductor structure of the substrate is attached to and separated from the portion of the base to which the gallium-based liquid metal is added.

[0025] According to a gallium nitride manufacturing method provided by the present invention, before adding gallium-based liquid metal to the surface of the substrate, the method further comprises:

[0026] Metal atoms for doping gallium nitride are added into the gallium-based liquid metal.

[0027] According to a gallium nitride manufacturing method provided by the present invention, before adding gallium-based liquid metal to the surface of a substrate, the method further comprises:

[0028] The substrate is cleaned and dried.

[0029] According to a gallium nitride manufacturing method provided by the present invention, during the process of adding gallium-based liquid metal to a substrate and during the process of placing the substrate into the chamber structure, the substrate is placed in a protective gas atmosphere.

[0030] The gallium nitride manufacturing device provided by the present invention has a chamber structure for accommodating a substrate carrying gallium-based liquid metal, a nitrogen source supply device capable of introducing nitrogen source gas into the chamber structure, and an electromagnetic wave device capable of emitting electromagnetic waves into the chamber structure.

[0031] In the process of manufacturing gallium nitride, gallium-based liquid metal is added to the surface of the substrate, and the substrate is placed in a chamber structure. Electromagnetic waves are emitted into the chamber structure, and nitrogen source gas is introduced into the chamber structure. In the chamber structure, the free electrons of the gallium-based liquid metal absorb the energy of the electromagnetic waves through resonance and discharge occurs. During the discharge process, the gallium-based liquid metal can promote the ionization of the nitrogen source gas to form a high-density, high-ionization, and high-purity nitrogen plasma. The highly reactive and high-energy nitrogen plasma reacts with the gallium in the gallium-based liquid metal to form gallium nitride.

[0032] With such an arrangement, the gallium nitride manufacturing device provided in the present invention can utilize the discharge phenomenon of gallium-based liquid metal in electromagnetic waves under the conditions of low working temperature and low working pressure to promote the ionization of nitrogen source gas to generate nitrogen plasma. Gallium in the gallium-based liquid metal reacts with nitrogen plasma to generate gallium nitride, making it easier to achieve the temperature and pressure conditions for gallium nitride manufacturing, thereby reducing the difficulty and cost of manufacturing gallium nitride.

[0033] Since the steps similar to those in the process of manufacturing gallium nitride by the gallium nitride manufacturing device are adopted, the gallium nitride manufacturing method provided by the present invention also has all the above advantages of the nitrogen manufacturing device. BRIEF DESCRIPTION OF THE DRAWINGS

[0034] In order to more clearly illustrate the technical solutions in the present invention or the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0035] Figure 1 is a schematic structural diagram of a gallium nitride manufacturing device provided in some embodiments of the present invention;

[0036] Figure 2 is a schematic diagram of a structure in which a gallium-based liquid metal lattice is added to a substrate provided in some embodiments of the present invention;

[0037] Figure 3 is a schematic diagram of a structure in which gallium-based liquid metal lines are added to a substrate provided in some embodiments of the present invention;

[0038] Figure 4 is a schematic diagram of a structure in which a gallium-based liquid metal pattern is added to a substrate provided in some embodiments of the present invention;

[0039] Figure 5 It is a schematic flow chart of a gallium nitride manufacturing method provided in some embodiments of the present invention.

[0040] Reference numerals:

[0041] 1. Nitrogen source supply device; 2. Cover structure; 3. Chamber structure; 4. Electromagnetic wave device; 5. Support platform; 6. Substrate; 7. Gallium-based liquid metal lattice; 8. Gallium-based liquid metal lines; 9. Gallium-based liquid metal pattern. DETAILED DESCRIPTION

[0042] In order to make the purpose, technical solution and advantages of the present invention clearer, the technical solution of the present invention will be clearly and completely described below in conjunction with the drawings of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0043] Combine the following Figure 1-Figure 5 A gallium nitride manufacturing apparatus provided in an embodiment of the present invention is described.

[0044] Specifically, the gallium nitride manufacturing device includes a chamber structure 3 , a nitrogen source supply device 1 and an electromagnetic wave device 4 .

[0045] The chamber structure 3 is used to accommodate the substrate 6 carrying the gallium-based liquid metal. Optionally, the gallium-based liquid metal is added to the surface of the substrate 6 by dripping, coating or printing. Optionally, the chamber structure 3 is set as a metal chamber. Optionally, the gallium-based liquid metal can be a single gallium, a gallium-indium liquid alloy, a gallium-tin liquid alloy or a gallium-indium-tin liquid alloy.

[0046] The nitrogen source supply device 1 is connected to the chamber structure 3, and the nitrogen source supply device 1 is used to introduce nitrogen source gas into the chamber structure 3. Optionally, the nitrogen source supply device 1 includes a gas container and a pipeline, and the gas container is connected to the chamber structure 3 through the pipeline. For example, the gas container can be a gas tank or a gas bottle. Optionally, the nitrogen source gas can be nitrogen or ammonia.

[0047] The electromagnetic wave device 4 is connected to the chamber structure 3, and the electromagnetic wave device 4 is used to emit electromagnetic waves into the chamber structure 3 so that the gallium-based liquid metal discharges in response to the electromagnetic waves. Optionally, the electromagnetic wave device 4 can be set as a microwave device. The specific principle of the microwave device can refer to the microwave oven. The present invention does not involve improvements to the principle of the microwave device itself, so it will not be repeated here. Optionally, the power of the microwave device is set to 80W~1000W, and the microwave frequency range of the microwave device is 915MHz~2.45GHz. The types of microwave feeding ports include rectangular ports, coaxial ports or circular ports, and the modes of the ports include transverse electric modes, transverse magnetic modes, transverse electromagnetic modes, numerical modes and periodic modes. The thickness of the generated gallium nitride can be adjusted by adjusting the microwave power and action time of the microwave device.

[0048] In this embodiment, during the process of manufacturing gallium nitride, gallium-based liquid metal is added to the surface of the substrate 6, and the substrate 6 is placed in the chamber structure 3. Electromagnetic waves are emitted into the chamber structure 3, and nitrogen or ammonia is introduced into the chamber structure 3. In the chamber structure 3, the free electrons of the gallium-based liquid metal absorb the energy of the electromagnetic waves through resonance and discharge occurs. For nitrogen, the discharge effect of the gallium-based liquid metal can cause nitrogen to be ionized to form a nitrogen plasma with high density, high ionization degree and high purity. As for ammonia, the gallium-based liquid metal discharge process causes ammonia to decompose into nitrogen and hydrogen, wherein nitrogen is ionized to form nitrogen plasma during the gallium-based liquid metal discharge process. Finally, the nitrogen plasma with high reactivity and high energy reacts with the gallium in the gallium-based liquid metal to generate gallium nitride.

[0049] With such a configuration, the gallium nitride manufacturing device provided in the embodiment of the present invention can utilize the discharge phenomenon of gallium-based liquid metal in electromagnetic waves under the conditions of low working temperature and low working pressure to promote the ionization of nitrogen source gas to generate nitrogen plasma. Gallium in the gallium-based liquid metal reacts with nitrogen plasma to generate gallium nitride, making it easier to achieve the temperature and pressure conditions for gallium nitride manufacturing, thereby reducing the difficulty and cost of manufacturing gallium nitride.

[0050] In addition, when the area of ​​the gallium-based liquid metal is large, its discharge range is also large, so that all areas of the gallium-based liquid metal have nitrogen plasma, so that gallium nitride can be generated on the entire surface of the gallium-based liquid metal, thereby making the area of ​​gallium nitride larger, that is, the gallium nitride manufacturing device provided in the embodiment of the present invention can produce large-sized gallium nitride.

[0051] In addition, by depositing gallium nitride on a smooth gallium-based liquid metal surface, the lattice defects caused by the rough interface during the growth of gallium nitride can be reduced, making the surface of gallium nitride more flat. Since gallium-based liquid metal has good compliance, it is also possible to achieve patterned preparation of two-dimensional gallium nitride films by pre-forming patterned gallium-based liquid metal.

[0052] Optionally, the substrate 6 may be a flexible substrate, such as polydimethylsiloxane (PDMS) or Ecoflex, or the substrate 6 may be an insulating silicon wafer.

[0053] In some embodiments provided by the present invention, a semiconductor structure for carrying gallium-based liquid metal is deposited on the surface of the substrate 6 .

[0054] In this embodiment, gallium-based liquid metal can be added to the semiconductor structure, and then the gallium-based liquid metal is formed into gallium nitride by the gallium nitride manufacturing device. In this way, the gallium nitride generated by the gallium nitride manufacturing device can directly form functional components such as PN junctions with the semiconductor structure, thereby achieving the effect of simultaneously generating functional components during the process of manufacturing gallium nitride, improving the processing efficiency of functional components, and reducing the processing difficulty of functional components.

[0055] Optionally, the semiconductor structure may be one or more of silicon dioxide, silicon nitride and gallium oxide, that is, one or more of silicon dioxide, silicon nitride and gallium oxide is deposited on the substrate 6 .

[0056] In some embodiments provided by the present invention, metal atoms for doping into gallium nitride are added to the gallium-based liquid metal.

[0057] In this embodiment, by adding metal atoms to the gallium-based liquid metal, the generated gallium nitride is doped with corresponding metal atoms, thereby improving the conductivity of gallium nitride and improving the ohmic contact of gallium nitride. In addition, through the good solubility of gallium-based liquid metal in other metal atoms, high doping of corresponding metal atoms can be achieved, and in-situ doping of gallium nitride can be achieved, thereby significantly improving the conductivity of gallium nitride.

[0058] Optionally, the doped metal atoms may be one or more of copper, zinc, gold, silver, aluminum, zinc and iron. For example, specifically, the gallium-based liquid metal is a gallium-indium liquid alloy, a gallium-tin liquid alloy or a gallium-indium-tin liquid alloy doped with one or more of copper, zinc, gold, silver, aluminum, zinc and iron.

[0059] In some embodiments provided by the present invention, the gallium nitride manufacturing device further includes a cover structure 2. The cover structure 2 is disposed inside the chamber structure 3, the cover structure 2 is connected to the chamber structure 3, an opening is provided at the bottom of the cover structure 2, the cover structure 2 is disposed above the substrate 6, and the opening of the cover structure 2 faces the substrate 6.

[0060] In this embodiment, by arranging the cover structure 2 above the substrate 6, during the discharge of the gallium-based liquid metal, the nitrogen source gas in the cover structure 2 is ionized, and the shrouding effect of the cover structure 2 can confine the nitrogen plasma above the substrate 6, thereby reducing the problem of nitrogen plasma escaping outside the cover structure 2 area, and increasing the probability of nitrogen plasma combining with the gallium-based liquid metal, thereby improving the utilization rate of nitrogen plasma, and improving the generation rate and quality of gallium nitride.

[0061] Optionally, the cover structure 2 is connected to the top of the chamber structure 3 .

[0062] Optionally, the cover structure 2 is configured as a metal cover or a non-metal cover.

[0063] In some embodiments provided by the present invention, the gallium nitride manufacturing device further includes a support platform 5. The support platform 5 is disposed in the chamber structure 3, and the support platform 5 is used to support the substrate 6. That is, during the manufacturing process, the substrate 6 is disposed on the support platform 5.

[0064] Optionally, the support platform 5 is configured as a lifting platform. By arranging the substrate 6 on the lifting platform, the distance between the substrate 6 and the cover structure 2 can be conveniently adjusted so that there is a suitable distance between the substrate 6 and the cover structure 2. In this way, on the one hand, the cover structure 2 can achieve a better limiting effect on the nitrogen plasma, and on the other hand, in the process of taking and placing the substrate 6, the distance between the cover structure 2 and the substrate 6 can be increased to facilitate taking and placing the substrate 6.

[0065] Optionally, the support platform 5 may be made of a temperature-resistant insulating material such as quartz foam board, ceramic, rubber, glass or plastic.

[0066] In some embodiments provided by the present invention, the gallium nitride manufacturing apparatus further includes a glove box, and the chamber structure 3 is disposed in the glove box.

[0067] In this embodiment, during the process of manufacturing gallium nitride, a protective gas such as nitrogen is introduced into the glove box, and then the operator can perform operations such as adding gallium-based liquid metal, placing the substrate 6 in the chamber structure 3, or taking the substrate 6 out of the chamber structure 3 through the glove box. By introducing a protective gas such as nitrogen into the glove box, the problem of oxidation of the gallium-based liquid metal can be reduced.

[0068] In some embodiments provided by the present invention, the gallium nitride manufacturing device further includes a robot. The robot is arranged in the chamber structure 3 .

[0069] In this embodiment, during the process of manufacturing gallium nitride, nitrogen is continuously introduced into the chamber structure 3, and then the robot is controlled to perform operations such as placing the substrate 6 on the support platform 5, adding gallium-based liquid metal to the substrate 6, or removing the substrate 6 from the support platform 5. By introducing nitrogen into the chamber structure 3, the problem of oxidation of the gallium-based liquid metal can be reduced.

[0070] refer to Figure 5 As shown, an embodiment of the present invention further provides a gallium nitride manufacturing method. For example, the gallium nitride manufacturing method can be implemented based on the gallium nitride manufacturing device described above, and the features of the gallium nitride manufacturing device and the gallium nitride manufacturing method can be compared and combined with each other.

[0071] Specifically, refer to Figure 5 As shown, the gallium nitride manufacturing method includes steps S100 to S400.

[0072] In step S100 , gallium-based liquid metal is added to the substrate 6 .

[0073] Specifically, the gallium-based liquid metal can be added to the surface of the substrate 6 by dripping, coating or printing. Optionally, the gallium-based liquid metal can be a single gallium substance, a gallium-indium liquid alloy, a gallium-tin liquid alloy or a gallium-indium-tin liquid alloy.

[0074] Step S200 , placing the substrate 6 into the chamber structure 3 .

[0075] Specifically, the chamber structure 3 is used to accommodate the substrate 6 carrying the gallium-based liquid metal and provide a closed space capable of accommodating the nitrogen source gas. Optionally, the chamber structure 3 is a metal chamber.

[0076] Step S300 , emitting electromagnetic waves into the chamber structure 3 , so that the gallium-based liquid metal generates electricity in response to the electromagnetic waves.

[0077] Specifically, electromagnetic waves are emitted into the chamber structure 3 through the electromagnetic wave device 4 connected to the chamber structure 3. Optionally, the electromagnetic wave device 4 can be set as a microwave device. The specific principle of the microwave device can refer to the microwave oven. The present invention does not involve the improvement of the principle of the microwave device itself, so it will not be repeated. Optionally, the power of the electromagnetic wave device 4 is set to 80W~1000W, and the electromagnetic wave frequency range of the electromagnetic wave device 4 is 915MHz~2.45GHz.

[0078] In step S400 , nitrogen source gas is introduced into the chamber structure 3 at least during the period of emitting electromagnetic waves to the chamber structure 3 .

[0079] Specifically, the nitrogen source gas may be nitrogen or ammonia. Optionally, the nitrogen source gas is introduced into the chamber structure 3 through a nitrogen source supply device 1 connected to the chamber structure 3. Optionally, the nitrogen source supply device 1 includes a gas container and a pipeline, and the gas container is connected to the chamber structure 3 through the pipeline. For example, the gas container may be a gas tank or a gas bottle.

[0080] The sequence numbers of the above steps are only for the convenience of explanation and should not be understood as limiting the execution order. For example, in step S400, the nitrogen source gas is introduced into the chamber structure 3, which can be performed before step S100 to reduce the problem of oxidation of the gallium-based liquid metal. Similarly, step S200 and step S100 can also be interchanged, that is, the substrate 6 is first placed in the chamber structure 3, and then the gallium-based liquid metal is added to the substrate 6.

[0081] In this embodiment, in the chamber structure 3, the free electrons of the gallium-based liquid metal absorb the energy of the electromagnetic wave through resonance and discharge occurs. For nitrogen, the discharge effect of the gallium-based liquid metal can cause the nitrogen to be ionized to form a nitrogen plasma with high density, high ionization degree and high purity. For ammonia, the gallium-based liquid metal discharge process causes the ammonia to decompose into nitrogen and hydrogen, wherein the nitrogen is ionized to form nitrogen plasma during the gallium-based liquid metal discharge process. Finally, the nitrogen plasma with high reactivity and high energy reacts with the gallium in the gallium-based liquid metal to form gallium nitride.

[0082] With such a configuration, the gallium nitride manufacturing method provided in the embodiment of the present invention can utilize the discharge phenomenon of gallium-based liquid metal in electromagnetic waves under the conditions of low working temperature and low working pressure to promote the ionization of nitrogen source gas to generate nitrogen plasma. Gallium in the gallium-based liquid metal reacts with nitrogen plasma to generate gallium nitride, making it easier to achieve the temperature and pressure conditions for gallium nitride manufacturing, thereby reducing the difficulty and cost of manufacturing gallium nitride.

[0083] In addition, when the area of ​​the gallium-based liquid metal is large, its discharge range is also large, so that all areas of the gallium-based liquid metal have nitrogen plasma, so that gallium nitride can be generated on the entire surface of the gallium-based liquid metal, thereby making the area of ​​gallium nitride larger, that is, the gallium nitride manufacturing method provided in the embodiment of the present invention can produce gallium nitride of larger size.

[0084] In addition, by depositing gallium nitride on a smooth gallium-based liquid metal surface, the lattice defects caused by the rough interface during the growth of gallium nitride can be reduced, making the surface of gallium nitride more flat. Since gallium-based liquid metal has good compliance, it is also possible to achieve patterned preparation of two-dimensional gallium nitride films by pre-forming patterned gallium-based liquid metal.

[0085] In some embodiments provided by the present invention, adding gallium-based liquid metal to the surface of the substrate 6 includes:

[0086] A semiconductor structure is disposed on the surface of the substrate 6 , and a gallium-based liquid metal is added to the semiconductor structure on the surface of the substrate 6 .

[0087] In this embodiment, gallium-based liquid metal can be added to the semiconductor structure, and then the gallium-based liquid metal is formed into gallium nitride. In this way, the generated gallium nitride can directly form functional components such as PN junctions with the semiconductor structure, thereby achieving the effect of simultaneously generating functional components during the process of manufacturing gallium nitride, improving the processing efficiency of functional components, and reducing the processing difficulty of functional components.

[0088] Optionally, the semiconductor structure may be one or more of silicon dioxide, silicon nitride and gallium oxide, that is, one or more of silicon dioxide, silicon nitride and gallium oxide is deposited on the substrate 6 .

[0089] In some embodiments provided by the present invention, after the nitrogen source gas is introduced into the chamber structure 3, the process further includes:

[0090] The gallium nitride film on the substrate 6 is peeled off and transferred to the substrate by bonding and separating the substrate and the substrate 6 with the gallium-based liquid metal added thereto.

[0091] In this embodiment, the substrate and the surface of the base 6 to which the gallium-based liquid metal is added are bonded and separated, so that the gallium nitride film on the surface of the substrate 6 can be transferred to the substrate, and the gallium-based liquid metal on the substrate 6 can continue to generate gallium nitride, thereby saving the time for taking and placing the substrate 6 and adding the gallium-based liquid metal, and improving the production efficiency of gallium nitride.

[0092] Optionally, the substrate is an insulating silicon wafer.

[0093] Furthermore, the substrate and the base 6 are bonded and separated by using the surface to which the gallium-based liquid metal is added, including:

[0094] A semiconductor structure is arranged on the surface of the substrate, and the semiconductor structure of the substrate is attached to and separated from the portion of the base 6 to which the gallium-based liquid metal is added.

[0095] In this embodiment, by attaching and separating the portion of the substrate with the semiconductor structure and the portion of the base 6 with the gallium-based liquid metal added thereto, gallium nitride can be transferred to the semiconductor structure of the substrate, and gallium nitride and the semiconductor structure directly form functional components such as PN junctions.

[0096] Optionally, the semiconductor structure may be one or more of silicon dioxide, silicon nitride and gallium oxide, that is, one or more of silicon dioxide, silicon nitride and gallium oxide is deposited on a substrate.

[0097] Further, after separating the substrate from the base 6, the method further comprises:

[0098] The substrate is placed in an ethanol solution to remove excess gallium-based liquid metal on the two-dimensional gallium nitride film to obtain two-dimensional crystalline gallium nitride. Optionally, the temperature of the ethanol solution ranges from 30 degrees Celsius to 60 degrees Celsius.

[0099] In some embodiments provided by the present invention, before adding the gallium-based liquid metal to the surface of the substrate 6, the process further includes:

[0100] Metal atoms for doping gallium nitride are added to the gallium-based liquid metal.

[0101] In this embodiment, by adding metal atoms to the gallium-based liquid metal, the generated gallium nitride is doped with corresponding metal atoms, thereby improving the conductivity of gallium nitride and improving the ohmic contact of gallium nitride. In addition, through the good solubility of gallium-based liquid metal in other metal atoms, high doping of corresponding metal atoms can be achieved, and in-situ doping of gallium nitride can be achieved, thereby significantly improving the conductivity of gallium nitride.

[0102] Optionally, the doped metal atoms may be one or more of copper, zinc, gold, silver, aluminum, zinc and iron. For example, specifically, the gallium-based liquid metal is a gallium-indium liquid alloy, a gallium-tin liquid alloy or a gallium-indium-tin liquid alloy doped with one or more of copper, zinc, gold, silver, aluminum, zinc and iron.

[0103] In some embodiments provided by the present invention, before adding the gallium-based liquid metal to the surface of the substrate 6, the process further includes:

[0104] The substrate 6 is cleaned and dried.

[0105] In this embodiment, impurities on the surface of the substrate 6 can be removed by performing cleaning and drying processes on the substrate 6 .

[0106] Specifically, the cleaning process includes: performing ultrasonic cleaning with deionized water, ultrasonic cleaning with acetone, and ultrasonic cleaning with ethanol, so as to remove organic impurities and inorganic impurities on the surface of the substrate 6 .

[0107] Specifically, the drying process includes: using nitrogen to purge and dry the substrate 6 to remove moisture on the surface of the substrate 6 .

[0108] In some embodiments provided by the present invention, the substrate 6 is placed in a protective gas atmosphere during the process of adding the gallium-based liquid metal to the substrate 6 and the process of placing the substrate 6 into the chamber structure 3. This arrangement can reduce the problem of oxidation of the gallium-based liquid metal.

[0109] Specifically, as described above, the chamber structure 3 can be set in a glove box, so that nitrogen is introduced into the glove box and related operations are performed in the glove box, or a manipulator can be set in the chamber structure 3, so that nitrogen is introduced into the chamber structure 3 and related operations are performed in the chamber structure 3 through the manipulator.

[0110] refer to Figure 2 As shown, it is an example of setting a gallium-based liquid metal lattice 7 on a substrate 6. Specifically, first, the substrate 6 is ultrasonically cleaned with deionized water, acetone, and ethanol, respectively, and then the substrate 6 is dried with nitrogen. A dispensing machine is used to evenly drop four rows and seven columns of equal amounts of liquid metal gallium droplet lattices on the substrate 6 to obtain a substrate 6 carrying a liquid metal gallium lattice. Second, the substrate 6 carrying the liquid metal gallium lattice is transferred to the supporting platform 5 in the chamber structure 3. Third, the substrate 6 carrying the liquid metal gallium lattice is pre-purged with nitrogen, and the nitrogen flow rate is maintained at 100 sccm. Fourth, turn on the microwave device. The rated output power of the microwave device is 800W, the microwave power is set to 600W, the microwave frequency is 2.45GHz, and the working time is 20min. Fifth, nitrogen is continuously introduced into the chamber structure 3. The liquid metal gallium lattice on the substrate 6 discharges under the action of electromagnetic waves provided by the microwave device, which causes the nitrogen to ionize and generate high-energy plasma. The nitrogen plasma reacts with gallium on the surface of the liquid metal gallium lattice to generate gallium nitride.

[0111] refer to Figure 3As shown, it is an example of setting a gallium-based liquid metal line 8 on a substrate 6. Specifically, first, the substrate 6 is ultrasonically cleaned with deionized water, acetone, and ethanol, respectively, and then the substrate 6 is dried with nitrogen. A eutectic gallium-indium liquid metal line is printed on the substrate 6 by screen printing, wherein the mass ratio of gallium and indium elements is 75.5wt%:24.5wt%, and the line width of the metal line is 500μm, and a substrate 6 carrying a eutectic gallium-indium liquid metal line is obtained. Second, the substrate 6 carrying the eutectic gallium-indium liquid metal line is transferred to the supporting platform 5 in the chamber structure 3. Third, the substrate 6 carrying the eutectic gallium-indium liquid metal line is pre-purged with nitrogen, and the nitrogen flow rate is maintained at 100sccm. Fourth, the microwave device is turned on. The rated output power of the microwave device is 800W, the microwave power is set to 500W, the microwave frequency is 2.45GHz, and the working time is 30min. Fifth, nitrogen is continuously introduced into the chamber structure 3, and the eutectic gallium-indium liquid metal wire on the substrate 6 discharges under the action of electromagnetic waves provided by the microwave device, which causes the nitrogen to ionize and generate high-energy plasma. The nitrogen plasma reacts with the gallium on the surface of the eutectic gallium-indium liquid metal wire to generate gallium nitride.

[0112] refer to Figure 4 As shown, it is an example of setting a gallium-based liquid metal pattern 9 on a substrate 6. Specifically, first, the substrate 6 is ultrasonically cleaned with deionized water, acetone, and ethanol, respectively, and then the substrate 6 is dried with nitrogen. A gallium-indium-aluminum alloy liquid metal pattern is printed on the substrate 6 by a transfer method, wherein the mass ratio of gallium, indium, and aluminum elements is 67.95wt%: 22.05wt%: 8wt%, and a substrate 6 carrying a gallium-indium-aluminum alloy liquid metal pattern is obtained. Second, the substrate 6 is transferred to the supporting platform 5 in the chamber structure 3. Third, the substrate 6 carrying the gallium-indium-aluminum alloy liquid metal pattern is pre-purged with nitrogen, and the nitrogen flow rate is maintained at 120sccm. Fourth, turn on the microwave device. The rated output power of the microwave device is 800W, the microwave power is set to 800W, the microwave frequency is 2.45GHz, and the working time is 20min. Fifth, nitrogen is continuously introduced into the chamber structure 3, and the gallium-indium-aluminum alloy liquid metal pattern on the substrate 6 undergoes discharge under the action of electromagnetic waves provided by the microwave device, which causes the nitrogen to ionize and generate high-energy plasma. The nitrogen plasma reacts with the gallium on the surface of the gallium-indium-aluminum alloy liquid metal pattern to generate gallium nitride doped with aluminum indium.

[0113] In the description of the embodiments of the present invention, it should be noted that the terms "center", "longitudinal", "lateral", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside" and the like indicate positions or positional relationships based on the positions or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the embodiments of the present invention and simplifying the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be constructed and operate in a specific orientation, and therefore cannot be understood as limitations on the embodiments of the present invention. In addition, the terms "first", "second", and "third" are used for descriptive purposes only and cannot be understood as indicating or implying relative importance.

[0114] In the description of the embodiments of the present invention, it should be noted that, unless otherwise clearly specified and limited, the terms "connected" and "connection" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium. For ordinary technicians in this field, the specific meanings of the above terms in the embodiments of the present invention can be understood according to specific circumstances.

[0115] In the description of this specification, the description with reference to the terms "one embodiment", "first aspect embodiment", "some embodiments", "example", "specific example", or "some examples" etc. means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the embodiment of the present invention. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described may be combined in any one or more embodiments or examples in a suitable manner. In addition, those skilled in the art may combine and combine the different embodiments or examples described in this specification and the features of the different embodiments or examples, without contradiction.

[0116] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or make equivalent replacements for some of the technical features therein. However, these modifications or replacements do not deviate the essence of the corresponding technical solutions from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. A gallium nitride manufacturing device, characterized in that: include: A chamber structure (3), wherein the chamber structure (3) is used to accommodate a substrate (6) carrying a gallium-based liquid metal; A nitrogen source supply device (1), the nitrogen source supply device (1) being connected to the chamber structure (3) and used for introducing nitrogen source gas into the chamber structure (3); An electromagnetic wave device (4) is connected to the chamber structure (3) and is used to emit electromagnetic waves into the chamber structure (3) so that the gallium-based liquid metal discharges in response to the electromagnetic waves.

2. The gallium nitride manufacturing device according to claim 1, characterized in that: It also comprises a cover structure (2), the cover structure (2) being arranged inside the chamber structure (3), the cover structure (2) being connected to the chamber structure (3), an opening being arranged at the bottom of the cover structure (2), the cover structure (2) being used to be arranged above the base (6), and the opening facing the base (6); And / or, the gallium nitride manufacturing device further comprises a supporting platform (5), wherein the supporting platform (5) is arranged in the chamber structure (3), and the supporting platform (5) is used to support the substrate (6).

3. The gallium nitride manufacturing device according to claim 1 or 2, characterized in that: A semiconductor structure for carrying gallium-based liquid metal is deposited on the surface of the substrate (6).

4. A method for manufacturing gallium nitride, characterized in that: include: Adding gallium-based liquid metal to the substrate (6); placing the substrate (6) into the chamber structure (3); emitting electromagnetic waves into the chamber structure (3) so that the gallium-based liquid metal discharges in response to the electromagnetic waves; At least during the period of emitting electromagnetic waves to the chamber structure (3), a nitrogen source gas is introduced into the chamber structure (3).

5. The gallium nitride manufacturing method according to claim 4, characterized in that: Adding gallium-based liquid metal to the surface of a substrate (6) comprises: A semiconductor structure is arranged on the surface of the substrate (6), and gallium-based liquid metal is added to the semiconductor structure on the surface of the substrate (6).

6. The gallium nitride manufacturing method according to claim 4, characterized in that: After the nitrogen source gas is introduced into the chamber structure (3), the method further comprises: The substrate is bonded to and separated from the surface of the base (6) to which the gallium-based liquid metal is added, so as to peel off the gallium nitride film on the base (6) and transfer it to the substrate.

7. The gallium nitride manufacturing method according to claim 6, characterized in that: The substrate and the surface of the base (6) to which the gallium-based liquid metal is added are bonded and separated, comprising: A semiconductor structure is arranged on the surface of the substrate, and the semiconductor structure of the substrate is attached to and separated from the part of the base (6) to which the gallium-based liquid metal is added.

8. The gallium nitride manufacturing method according to any one of claims 4 to 7, characterized in that: Before adding the gallium-based liquid metal to the surface of the substrate (6), the method further comprises: Metal atoms for doping gallium nitride are added into the gallium-based liquid metal.

9. The gallium nitride manufacturing method according to any one of claims 4 to 7, characterized in that: Before adding the gallium-based liquid metal to the surface of the substrate (6), the method further comprises: The substrate (6) is cleaned and dried.

10. The gallium nitride manufacturing method according to any one of claims 4 to 7, characterized in that: During the process of adding the gallium-based liquid metal to the substrate (6) and during the process of placing the substrate (6) into the chamber structure (3), the substrate (6) is placed in a protective gas atmosphere.

Images