Double-spring-needle crimping type IGBT (Insulated Gate Bipolar Translator) and junction temperature sensing method thereof

Abstract

The invention belongs to the technical field of IGBT junction temperature sensing, and particularly discloses a double-spring-needle crimping type IGBT and a junction temperature sensing method thereof. Wherein the emitting electrode of the IGBT chip is connected to the power emitting electrode terminal through the emitting electrode molybdenum sheet and the emitting electrode boss; an unfilled corner is arranged at the diagonal position of the emitter boss, and an emitter spring needle is placed at the unfilled corner; one end of the emitting electrode spring needle is contacted with the emitting electrode of the IGBT chip, and the other end of the emitting electrode spring needle is contacted with the exposed emitting electrode bonding pad on the grid printed circuit board and is further connected with the Kelvin emitting electrode terminal; and the Kelvin emitter terminal and the power emitter terminal are used for extracting parasitic inductance between the Kelvin emitter and the power emitter of the IGBT chip so as to obtain the junction temperature of the chip in a working state. According to the invention, the sensing of the junction temperature of the crimping type IGBT chip can be realized.

Description

Technical Field

[0001] The present application belongs to the technical field of IGBT junction temperature sensing, and more specifically, relates to a double spring pin crimping type IGBT and a junction temperature sensing method thereof. Background Art

[0002] The high-voltage and large-capacity flexible direct current transmission system that supports large-scale renewable energy transmission is a key technology for building a new power system with renewable energy as the main body. The crimped IGBT device is the core device of the flexible direct current converter valve. The crimped IGBT has the advantages of high power density, double-sided cooling, low parasitic inductance, easy series connection, and fault short circuit. The crimped IGBT has been widely used in flexible direct current converter valves, high-voltage direct current circuit breakers, and static synchronous compensators. As the core component of flexible direct current transmission technology, the reliability of the crimped IGBT has attracted widespread attention. Among the various failure factors of power semiconductors, temperature-induced device failure accounts for more than 50%. The online monitoring of the junction temperature of the crimped IGBT helps to improve the thermal management of the flexible converter valve and help the flexible direct current converter valve specify a reasonable operation and maintenance method. The temperature-sensitive electrical parameter method has the advantages of short response time, non-invasiveness, and easy online monitoring. However, there is currently a lack of online monitoring of the junction temperature of the crimped IGBT based on temperature-sensitive electrical parameters. Summary of the invention

[0003] In view of the defects of the prior art, the purpose of this application is to provide a double spring pin crimped IGBT and a junction temperature sensing method thereof, aiming to solve the problem of the lack of online monitoring of the junction temperature of the crimped IGBT based on temperature-sensitive electrical parameters.

[0004] To achieve the above-mentioned purpose, in a first aspect, the present application provides a double spring pin crimping type IGBT, comprising an IGBT submodule and a gate printed circuit board; the IGBT submodule is arranged above the gate printed circuit board; The IGBT sub-module includes: an emitter spring pin and an IGBT chip, an emitter molybdenum sheet and an emitter boss arranged in sequence from top to bottom; The emitter of the IGBT chip is connected to the power emitter terminal through the emitter molybdenum sheet and the emitter boss; A notch is provided at the diagonal position of the emitter boss, and an emitter spring pin is placed at the notch; one end of the emitter spring pin contacts the emitter of the IGBT chip, and the other end contacts the bare emitter pad on the gate printed circuit board, and then is connected to the Kelvin emitter terminal; The Kelvin emitter terminal and the power emitter terminal are used to extract the parasitic inductance between the Kelvin emitter and the power emitter of the IGBT chip so as to obtain the junction temperature under working conditions.

[0005] Further preferably, a notch is provided at the diagonal position of the emitter boss, and a gate spring pin is placed at the notch; one end of the gate spring pin contacts the gate of the IGBT chip, and the other end contacts the exposed gate pad on the gate printed circuit board, and is further connected to the gate terminal.

[0006] Further preferably, the double spring pin crimping type IGBT further comprises: a ceramic tube shell; The ceramic tube shell is used to place the IGBT sub-module and the gate printed circuit board, and is provided with a gate terminal, a power emitter terminal and a Kelvin emitter terminal on the outside.

[0007] Further preferably, the double spring pin crimping type IGBT also includes a collector copper plate, and the IGBT sub-module also includes a collector molybdenum sheet, the collector copper plate is located above the collector molybdenum sheet, and the collector molybdenum sheet is located above the IGBT chip; the collector molybdenum sheet is used to lead the collector of the IGBT chip to the collector copper plate.

[0008] Further preferably, the IGBT sub-module further includes a plastic frame and a silver gasket; the silver gasket is located below the emitter molybdenum sheet, and the plastic frame is used to fix the emitter molybdenum sheet, the IGBT chip, the silver gasket and the collector molybdenum sheet.

[0009] Further preferably, the double spring pin crimping type IGBT further includes a diode sub-module, which is connected in parallel with the IGBT sub-module.

[0010] Further preferably, a gate terminal, a power emitter terminal and a Kelvin emitter terminal form a group of terminals, and a plurality of groups of terminals are arranged outside the ceramic tube shell.

[0011] In the second aspect, based on the above-mentioned double spring pin crimping type IGBT, the present application provides a junction temperature sensing method of the double spring pin crimping type IGBT, specifically: When the press-fit IGBT is in working state, the voltage drop of the parasitic inductance between the Kelvin emitter and the power emitter is measured during the shutdown process of the press-fit IGBT, and based on the relationship between the parasitic inductance and the junction temperature of the press-fit IGBT, the junction temperature of the press-fit IGBT in the working state of the IGBT chip is obtained; The method for obtaining the relationship between the voltage drop of the parasitic inductance between the Kelvin emitter and the power emitter and the junction temperature of the press-fit IGBT specifically includes the following steps: Extract the parasitic inductance between the chip Kelvin emitter and the power emitter, and select the power emitter terminal that meets the sampling voltage requirements of the sampling circuit; Multiple temperatures are set from low to high to heat the press-fit IGBT respectively, so as to obtain the voltage drop of the parasitic inductance between the Kelvin emitter and the power emitter during the shutdown process of the press-fit IGBT; wherein the highest temperature is set to the maximum operating temperature of the press-fit IGBT; The least square method is used to obtain the relationship between the voltage drop of the parasitic inductance between the Kelvin emitter and the power emitter and the junction temperature of the press-fit IGBT.

[0012] In general, the above technical solutions conceived by this application have the following beneficial effects compared with the prior art: The present application provides a double spring pin crimping type IGBT, wherein the emitter of the IGBT chip is connected to the power emitter terminal through the emitter molybdenum sheet and the emitter boss; a notch is provided at the diagonal position of the emitter boss, and an emitter spring pin is placed at the notch position, one end of the emitter spring pin contacts the emitter of the IGBT chip, and the other end contacts the bare emitter pad on the gate printed circuit board, and then connected to the Kelvin emitter terminal; the emitter of each chip of the crimping type IGBT module can be led out separately to form a separate gate loop, and the present application Please provide the Kelvin emitter terminal and the power emitter terminal. Through the Kelvin emitter terminal and the power emitter terminal, the parasitic inductance between the Kelvin emitter and the power emitter of the IGBT chip can be extracted, and then the collector current change rate can be obtained. The IGBT turn-off collector current change rate is related to the chip junction temperature. In addition, the carrier recombination time during the IGBT turn-off transient process increases with the increase in temperature. Therefore, based on the setting of the Kelvin emitter terminal and the power emitter terminal, the chip junction temperature of the double spring pin crimping IGBT in the working state can be obtained. In summary, this application can realize the perception of the crimping IGBT chip junction temperature without interfering with the normal operation of the converter.

[0013] The present application provides a junction temperature sensing method for a double spring pin crimped IGBT, which heats the crimped IGBT, collects the voltage drop of the parasitic inductance between the Kelvin emitter and the power emitter during the shutdown process of the crimped IGBT, and uses the least squares method to obtain the relationship between the voltage drop of the parasitic inductance between the Kelvin emitter and the power emitter and the junction temperature of the crimped IGBT. When the crimped IGBT is in a working state, the junction temperature of the crimped IGBT in the working state can be quickly obtained by measuring the voltage drop of the parasitic inductance between the Kelvin emitter and the power emitter during the shutdown process of the crimped IGBT. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] Figure 1 This is an overall structural diagram of a double spring pin crimping type IGBT provided in an embodiment of the present application; Figure 2 It is a double spring pin crimping type IGBT tube shell provided in an embodiment of the present application; Figure 3 It is a double spring pin crimping type IGBT plastic frame provided in an embodiment of the present application; Figure 4This is a flow chart of a double spring pin crimping type IGBT junction temperature sensing method provided in an embodiment of the present application; Figure 5 It is a double pulse test simulation circuit provided in an embodiment of the present application; Figure 6 The embodiment of the present application provides a condition where the Kelvin emitter and emitter terminal voltages change with temperature during the shutdown process; Figure 7 This is a diagram showing the relationship between the Kelvin emitter-emitter terminal voltage and the chip junction temperature during the shutdown process provided in an embodiment of the present application. DETAILED DESCRIPTION

[0015] In order to make the purpose, technical solution and advantages of the present application more clearly understood, the present application is further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present application and are not used to limit the present application.

[0016] The term "and / or" in this article is a description of the association relationship of associated objects, indicating that there can be three relationships. For example, A and / or B can represent: A exists alone, A and B exist at the same time, and B exists alone. The symbol " / " in this article indicates that the associated objects are in an or relationship, for example, A / B means A or B.

[0017] The terms “first”, “second” and the like in the specification and claims herein are used to distinguish different objects rather than to describe a specific order of the objects.

[0018] In the embodiments of the present application, words such as "exemplary" or "for example" are used to indicate examples, illustrations or descriptions. Any embodiment or design described as "exemplary" or "for example" in the embodiments of the present application should not be interpreted as being more preferred or more advantageous than other embodiments or designs. Specifically, the use of words such as "exemplary" or "for example" is intended to present related concepts in a specific way.

[0019] In the description of the embodiments of the present application, unless otherwise specified, “plurality” means two or more than two.

[0020] This application proposes a double spring pin crimped IGBT junction temperature sensing method based on the off collector current change rate. The off collector current change rate is an electrical parameter that is strongly correlated with temperature and is not affected by the reverse recovery current of the freewheeling diode. The double spring pin method can be used to derive the emitter potential of the crimped IGBT chip, extract the off collector current change rate, and obtain the junction temperature of the crimped IGBT chip.

[0021] The embodiments of the present application are described below in conjunction with the drawings in the embodiments of the present application.

[0022] like Figure 1 As shown, the press-fit type IGBT module includes an IGBT sub-module, a diode sub-module, a gate printed circuit board, a ceramic tube shell and a collector copper plate; wherein the IGBT sub-module and the diode sub-module are arranged in parallel above the gate printed circuit board; the gate printed circuit board is located inside the ceramic tube shell; the collector copper plate is located above the ceramic tube shell; wherein the IGBT sub-modules are connected in parallel, and the diode sub-modules are also connected in parallel; Each IGBT sub-module is provided with: a collector molybdenum sheet, an IGBT chip, an emitter molybdenum sheet, a silver gasket, an emitter copper boss and a plastic frame from top to bottom; The collector molybdenum sheet is used to lead the collector of the IGBT chip to the collector copper plate; the emitter molybdenum sheet is used to lead the power emitter of the IGBT to the silver gasket, connected to the emitter copper boss through the silver gasket, and connected to the power emitter terminal of the ceramic tube shell; Figure 2 As shown, the plastic frame is used to fix the silver gasket, the emitter molybdenum sheet, the IGBT chip and the collector molybdenum sheet; like Figure 2 As shown, a notch is cut at the diagonal position of the emitter copper boss on the IGBT sub-module in the ceramic tube shell, and two spring pins are placed in the notch; accordingly, as shown in FIG. Figure 3 As shown, two cylindrical holes at the diagonal positions of the plastic frame can be installed with two spring sheets, namely, a gate spring pin and an emitter spring pin; the gate spring pin contacts the gate of the IGBT chip at its head, and contacts the exposed gate pad on the gate PCB at its tail; the emitter spring pin contacts the emitter of the IGBT chip at its head, and contacts the exposed emitter pad on the gate PCB at its tail; that is, the two spring pins are respectively connected to the gate and emitter of the IGBT chip, leading the gate potential and emitter potential of the chip to the gate PCB; the gate and emitter of the IGBT chip are led to the gate terminal and Kelvin emitter terminal of the ceramic tube shell through the gate PCB; More specifically, the gate PCB exposes the gate potential pad and the emitter potential pad at the same time to achieve electrical connection with the chip gate and Kelvin emitter; the gate PCB can expose multiple pads to achieve separate lead-out of the Kelvin emitter potential and gate potential of each chip, so as to individually control the gate drive circuit of each chip; in addition, the external terminals on the ceramic tube shell will be connected to the gate PCB to achieve electrical connection with the chip gate and Kelvin emitter; In summary, the present application provides three external terminals on the ceramic tube shell through the setting of double spring pins, namely: a gate terminal, a power emitter terminal and a Kelvin emitter terminal.

[0023] Because there are a lot of carrier recombination in the IGBT turn-off transient process, the recombination time of these carriers increases with the increase of temperature. Therefore, the rate of change of the IGBT turn-off collector current is related to the temperature. The rate of change of the turn-off collector current can be obtained by the voltage of the parasitic inductance between the Kelvin emitter and the power emitter terminal.

[0024] Based on the above-mentioned double spring pin crimping type IGBT, the present application provides a double spring pin crimping type IGBT junction temperature sensing method, such as Figure 4 As shown, the specific steps include: Step S1: extract the parasitic inductance between the chip Kelvin emitter and the power emitter, determine a reasonable chip power emitter lead-out terminal, and ensure that the parasitic inductance voltage drop between the power emitter terminal and the chip Kelvin emitter terminal can meet the sampling voltage requirement of the sampling circuit; Step S2: Use a heating plate to heat the crimped IGBT module to a constant temperature. After the module temperature stabilizes, extract the voltage drop of the parasitic inductance between the Kelvin emitter and the power emitter during the device shutdown process ( V e’E ); Among them, the voltage drop of the parasitic inductance between the Kelvin emitter and the power emitter is:

[0025] in, It is the parasitic inductance between the chip emitter and the power emitter; d is the chip collector current change; d is the collector current change time; Step S3: Increase the temperature of the crimped IGBT. If the temperature of the crimped IGBT is less than or equal to 125°C, increase the temperature of the heating plate and repeat step S2. When the temperature of the crimped IGBT exceeds 125°C (maximum operating temperature), V e’E The least squares fitting is performed with the temperature data points of the crimped IGBT to obtain V e’E Relationship with temperature of press-fit IGBT; Step S4: Measurement during the shutdown process of the crimped IGBT module in operation V e’E , substituting this voltage into the above relationship to obtain the chip temperature of the press-fit type IGBT.

[0026] To verify this method, we built Figure 5In the double pulse test simulation circuit shown in the figure, the bus voltage is 400V, the bus voltage stabilizing capacitor is 1000μF, and the load inductance is 100μH in the simulation condition. In order to simulate the parasitic inductance between the Kelvin emitter and the emitter of the chip, a parasitic inductance of 200nH is added to the emitter of the device, and the voltage on the inductor is extracted to reversely infer the chip junction temperature. The chip temperatures are set to 25℃, 50℃, 75℃, 100℃ and 125℃ respectively. The voltage curve on the parasitic inductance is extracted during the first shutdown process of the device, as shown in Figure 1. Figure 6 shown in Figure 6 Based on this, the maximum value of the parasitic inductance voltage is extracted, and the relationship between it and the junction temperature is fitted by the least squares method to obtain the relationship between the maximum value of the parasitic inductance voltage and the chip junction temperature. Figure 7 As shown, the fitting coefficient R 2 It reaches 0.991, which proves that the parasitic inductance voltage has a good linear relationship with the chip junction temperature.

[0027] In summary, compared with the prior art, the present application has the following advantages: The present application provides a double spring pin crimping IGBT, wherein the emitter of the IGBT chip is connected to the power emitter terminal through the emitter molybdenum sheet and the emitter boss; a notch is provided at the diagonal position of the emitter boss, and an emitter spring pin is placed at the notch position, one end of the emitter spring pin contacts the emitter of the IGBT chip, and the other end contacts the exposed emitter pad on the gate printed circuit board, and then connected to the Kelvin emitter terminal; the emitter of each chip of the crimping IGBT module can be individually led out to form a separate gate loop, and the Kelvin emitter terminal and the power emitter terminal provided in the present application can be used to extract the parasitic inductance between the Kelvin emitter and the power emitter of the IGBT chip, and then obtain the collector current change rate, and the IGBT turn-off collector current change rate is related to temperature, and the carrier recombination time increases with the increase of temperature during the IGBT turn-off transient process, therefore, based on the setting of the Kelvin emitter terminal and the power emitter terminal, the chip junction temperature of the double spring pin crimping IGBT in the working state can be obtained. In summary, the present application can realize the perception of the junction temperature of the press-fit IGBT chip without interfering with the normal operation of the converter.

[0028] The present application provides a junction temperature sensing method for a double spring pin crimped IGBT, which heats the crimped IGBT, collects the voltage drop of the parasitic inductance between the Kelvin emitter and the power emitter during the shutdown process of the crimped IGBT, and uses the least squares method to obtain the relationship between the voltage drop of the parasitic inductance between the Kelvin emitter and the power emitter and the temperature of the crimped IGBT. When the crimped IGBT is in a working state, the chip junction temperature of the crimped IGBT in the working state can be quickly obtained by measuring the voltage drop of the parasitic inductance between the Kelvin emitter and the power emitter during the shutdown process of the crimped IGBT.

[0029] It should be understood that expressions such as "including" and "may include" that may be used in the present application indicate the existence of the disclosed functions, operations, or constituent elements, and do not limit one or more additional functions, operations, and constituent elements. In the present application, terms such as "including" and / or "having" may be interpreted as indicating specific characteristics, numbers, operations, constituent elements, components, or combinations thereof, but may not be interpreted as excluding the existence or possibility of adding one or more other characteristics, numbers, operations, constituent elements, components, or combinations thereof.

[0030] In addition, in the present application, the expression "and / or" includes any and all combinations of the associated listed words. For example, the expression "A and / or B" may include A, may include B, or may include both A and B.

[0031] In the description of the embodiments of the present application, it should be noted that, unless otherwise clearly specified and limited, the term "connection" should be understood in a broad sense.

[0032] In addition, in the embodiments of the present application, the mathematical concepts mentioned are symmetry, equality, parallelism, verticality, etc. These limitations are all for the current state of the art, rather than being absolutely strict definitions in a mathematical sense, and allow a small amount of deviation, approximation to symmetry, approximation to equality, approximation to parallelism, approximation to verticality, etc. are all possible. For example, A and B are parallel, which means that A and B are parallel or approximately parallel, and the angle between A and B can be between 0 and 10 degrees. A and B are perpendicular, which means that A and B are perpendicular or approximately perpendicular, and the angle between A and B can be between 80 and 100 degrees.

[0033] The above is only a specific implementation of the present application, but the protection scope of the present application is not limited thereto. Any person skilled in the art who is familiar with the present technical field can easily think of changes or substitutions within the technical scope disclosed in the present application, which should be included in the protection scope of the present application. Therefore, the protection scope of the present application should be based on the protection scope of the claims.

Claims

1. A double spring pin crimping type IGBT, characterized in that: include: IGBT submodule and gate printed circuit board; An IGBT submodule is arranged above the gate printed circuit board; The IGBT sub-module includes: an emitter spring pin and an IGBT chip, an emitter molybdenum sheet and an emitter boss arranged in sequence from top to bottom; The emitter of the IGBT chip is connected to the power emitter terminal through the emitter molybdenum sheet and the emitter boss; A notch is provided at the diagonal position of the emitter boss, and an emitter spring pin is placed at the notch; one end of the emitter spring pin contacts the emitter of the IGBT chip, and the other end contacts the exposed emitter pad on the gate printed circuit board, and then is connected to the Kelvin emitter terminal; The Kelvin emitter terminal and the power emitter terminal are used to extract the parasitic inductance between the Kelvin emitter and the power emitter of the IGBT chip so as to obtain the junction temperature under working conditions.

2. The double spring pin crimping type IGBT according to claim 1, characterized in that: There is a notch at the diagonal position of the emitter boss, and a gate spring pin is placed at the notch; one end of the gate spring pin contacts the gate of the IGBT chip, and the other end contacts the bare gate pad on the gate printed circuit board, and is then connected to the gate terminal.

3. The double spring pin crimping type IGBT according to claim 2, characterized in that: Also includes: The ceramic tube shell is used to place the IGBT sub-module and the gate printed circuit board, and is provided with a gate terminal, a power emitter terminal and a Kelvin emitter terminal on the outside.

4. The double spring pin crimping type IGBT according to any one of claims 1 to 3, characterized in that: The double spring pin crimping type IGBT also includes a collector copper plate, and the IGBT sub-module also includes a collector molybdenum sheet. The collector copper plate is located above the collector molybdenum sheet, and the collector molybdenum sheet is located above the IGBT chip; the collector molybdenum sheet is used to lead the collector of the IGBT chip to the collector copper plate.

5. The double spring pin crimping type IGBT according to any one of claims 1 to 3, characterized in that: The IGBT sub-module also includes a plastic frame and a silver gasket; the silver gasket is located below the emitter molybdenum sheet, and the plastic frame is used to fix the emitter molybdenum sheet, the IGBT chip, the silver gasket and the collector molybdenum sheet.

6. The double spring pin crimping type IGBT according to claim 1, characterized in that: Also included is a diode sub-module, which is connected in parallel with the IGBT sub-module.

7. The double spring pin crimping type IGBT according to claim 2 or 3, characterized in that: A gate terminal, a power emitter terminal and a Kelvin emitter terminal are used as a group of terminals, and a plurality of groups of terminals are arranged outside the ceramic tube shell.

8. A junction temperature sensing method for a double spring pin crimping type IGBT based on any one of claims 1 to 7, characterized in that: Specifically: When the press-fit IGBT is in working state, the voltage drop of the parasitic inductance between the Kelvin emitter and the power emitter is measured during the shutdown process of the press-fit IGBT, and based on the relationship between the parasitic inductance and the junction temperature of the press-fit IGBT, the junction temperature of the press-fit IGBT in the working state of the IGBT chip is obtained; The method for obtaining the relationship between the voltage drop of the parasitic inductance between the Kelvin emitter and the power emitter and the junction temperature of the press-fit IGBT specifically includes the following steps: Extract the parasitic inductance between the chip Kelvin emitter and the power emitter, and select the power emitter terminal that meets the sampling voltage requirements of the sampling circuit; Multiple temperatures are set from low to high to heat the press-fit IGBT respectively, so as to obtain the voltage drop of the parasitic inductance between the Kelvin emitter and the power emitter during the shutdown process of the press-fit IGBT; wherein the highest temperature is set to the maximum operating temperature of the press-fit IGBT; The least square method is used to obtain the relationship between the voltage drop of the parasitic inductance between the Kelvin emitter and the power emitter and the junction temperature of the press-fit IGBT.

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