Simulation method and device and storage medium

Abstract

The invention relates to a simulation method and device and a storage medium. The method comprises the following steps: acquiring a sample circuit board; the sample circuit board is provided with a transmission line to be tested; scattering parameters of the transmission line to be tested in the sample circuit board are obtained; performing fitting based on the scattering parameters and material parameters of the sample circuit board before preparation to obtain a target simulation model; and inputting material parameters of a target circuit board before preparation into the target simulation model to obtain equivalent parameters of the material parameters after preparation of the target circuit board. Simulation fitting is carried out based on the scattering parameters of the sample circuit board and the material parameters of the sample circuit board before preparation to obtain the target simulation model capable of outputting the equivalent parameters of the material parameters after preparation, so that the equivalent parameters of the material parameters can be quickly obtained based on the target simulation model, and the calculation efficiency is improved. Based on the equivalent parameters, simulation precision of board-level SI, PI and EMC can be improved.

Description

Technical Field

[0001] The present disclosure relates to the field of computer communications, and in particular to a simulation method, device and storage medium. Background Art

[0002] HDI (High Density Interconnector) is the highest level of PCB production technology today. From the perspective of the PCB (Printed circuitboard) industry chain, the upstream includes raw materials such as copper clad laminates, resins, and dry films, the midstream is PCB manufacturing, and the downstream includes many application scenarios such as computers, automotive electronics, consumer electronics, and aerospace.

[0003] Along with HDI boards, FPC (Flexible Printed Circuit) has also been developed. Its application in smart devices accounts for a large proportion, and its usage is constantly increasing. It is also widely used in automobiles, medical treatment, and industrial control, and its application prospects are also very broad. FPC boards can meet the connection requirements of mobile phone screens, side keys, batteries, cameras and other modules to the motherboard.

[0004] The material parameters of the substrates used in HDI boards and FPC boards play a decisive role in the simulation accuracy of FPC signal integrity. Among them, the material parameters mainly include Dk (Dielectric constant) value, Df (Dissipation factor) value and roughness.

[0005] However, the material parameters of various substrates used in HDI boards and FPC boards will also change after lamination, so the material parameters of the unlaminated substrates measured do not match the material parameters of the substrates in the HDI boards and FPC boards. Summary of the invention

[0006] In order to overcome the problems existing in the related art, the present disclosure provides a simulation method, device and storage medium.

[0007] According to a first aspect of an embodiment of the present disclosure, a simulation method is provided, the method comprising:

[0008] Obtaining a sample circuit board; the sample circuit board has a transmission line to be tested;

[0009] Obtaining scattering parameters of the transmission line to be tested in the sample circuit board;

[0010] Fitting is performed based on the scattering parameters and material parameters of the sample circuit board before preparation to obtain a target simulation model;

[0011] The material parameters of the target circuit board before being manufactured are input into the target simulation model to obtain equivalent parameters of the material parameters after the target circuit board is manufactured.

[0012] In some embodiments, the material parameters of the sample circuit board before preparation include at least one of the following: dielectric constant, relative dielectric constant, loss factor, conductivity, relative magnetic permeability, copper roughness, etching angle and skin depth.

[0013] In some embodiments, the transmission line to be tested includes a first transmission line and a second transmission line;

[0014] The first transmission line includes a first de-embedding reference line; the second transmission line includes a second de-embedding reference line and a first test line;

[0015] The first de-embedding reference line and the second de-embedding reference line have the same length and width.

[0016] In some embodiments, the transmission line to be tested further includes a third transmission line;

[0017] The third transmission line includes a third de-embedding reference line and a second test line;

[0018] The first de-embedding reference line, the second de-embedding reference line and the third de-embedding reference line have the same length and width; the first test line and the second test line have different widths.

[0019] In some embodiments, obtaining the scattering parameters of the transmission line to be tested in the sample circuit board includes:

[0020] Acquire scattering parameters of the first transmission line and the second transmission line;

[0021] The scattering parameters of the first test line in the second transmission line are obtained by de-embedding.

[0022] In some embodiments, the method further comprises:

[0023] acquiring insertion loss, return loss and phase of the first test line according to the scattering parameter of the first test line;

[0024] The scattering parameters of the first test line are verified in the frequency domain based on the insertion loss, return loss and phase of the first test line.

[0025] In some embodiments, the method further comprises:

[0026] The test impedance of the first test line is obtained by measuring with a time domain reflectometer;

[0027] acquiring a transmission line impedance of the first test line according to a scattering parameter of the first test line;

[0028] A scattering parameter of the first test line is verified in the time domain based on the test impedance and the transmission line impedance.

[0029] In some embodiments, fitting is performed based on the scattering parameters and the material parameters of the sample circuit board before preparation to obtain a target simulation model, including:

[0030] Constructing a simulation model based on material parameters of the sample circuit board before preparation;

[0031] Perform transmission line delay fitting based on the simulated delay and simulated phase output by the simulation model and the scattering parameters, and train the equivalent dielectric constant in the simulation model;

[0032] Perform insertion loss fitting and return loss fitting in a high frequency band based on the simulated insertion loss and simulated return loss output by the simulation model and the scattering parameters, and train the equivalent loss factor and equivalent copper roughness in the simulation model;

[0033] Fitting the insertion loss in the low frequency band based on the simulated insertion loss in the low frequency band output by the simulation model and the scattering parameters, and training the equivalent conductivity in the simulation model;

[0034] The simulation model is updated based on the equivalent parameters obtained through training to obtain a target simulation model.

[0035] In some embodiments, the method further comprises:

[0036] Slicing the sample circuit board to obtain sample circuit board slices;

[0037] Acquiring slice data of the sample circuit board slice;

[0038] A simulation model is constructed based on the slicing data and material parameters of the sample circuit board before preparation.

[0039] In some embodiments, the slice data includes at least one of the following: line width, etching angle, and circuit board thickness.

[0040] In some embodiments, before constructing the simulation model based on the slice data and the material parameters of the sample circuit board before preparation, the method further includes:

[0041] Perform transmission line impedance fitting based on the material parameters of the sample circuit board before preparation and the scattering parameters, and adjust the slice data;

[0042] Before constructing the simulation model based on the slice data and the material parameters of the sample circuit board before preparation, the method includes:

[0043] A simulation model is constructed based on the adjusted slicing data and material parameters of the sample circuit board before preparation.

[0044] According to a second aspect of an embodiment of the present disclosure, a simulation device is provided, including:

[0045] An acquisition module is configured to acquire a sample circuit board; the sample circuit board has a transmission line to be tested;

[0046] A testing module configured to obtain scattering parameters of the transmission line to be tested in the sample circuit board;

[0047] A determination module configured to perform fitting based on the scattering parameters and material parameters of the sample circuit board before preparation to obtain a target simulation model;

[0048] The simulation module is configured to input material parameters of the target circuit board before preparation into the target simulation model to obtain equivalent parameters of the material parameters after the target circuit board is prepared.

[0049] In some embodiments, the material parameters of the sample circuit board before preparation include at least one of the following: dielectric constant, relative dielectric constant, loss factor, conductivity, relative magnetic permeability, copper roughness, etching angle and skin depth.

[0050] In some embodiments, the transmission line to be tested includes a first transmission line and a second transmission line;

[0051] The first transmission line includes a first de-embedding reference line; the second transmission line includes a second de-embedding reference line and a first test line;

[0052] The first de-embedding reference line and the second de-embedding reference line have the same length and width.

[0053] In some embodiments, the transmission line to be tested further includes a third transmission line;

[0054] The third transmission line includes a third de-embedding reference line and a second test line;

[0055] The first de-embedding reference line, the second de-embedding reference line and the third de-embedding reference line have the same length and width; the first test line and the second test line have different widths.

[0056] In some embodiments, the test module is configured as follows:

[0057] Acquire scattering parameters of the first transmission line and the second transmission line;

[0058] The scattering parameters of the first test line in the second transmission line are obtained by de-embedding.

[0059] In some embodiments, the apparatus further comprises:

[0060] A verification module, configured to obtain the insertion loss, return loss and phase of the first test line according to the scattering parameter of the first test line;

[0061] The scattering parameters of the first test line are verified in the frequency domain based on the insertion loss, return loss and phase of the first test line.

[0062] In some embodiments, the apparatus further comprises:

[0063] A verification module, configured to obtain a test impedance of the first test line by measuring with a time domain reflectometer;

[0064] acquiring a transmission line impedance of the first test line according to a scattering parameter of the first test line;

[0065] A scattering parameter of the first test line is verified in the time domain based on the test impedance and the transmission line impedance.

[0066] In some embodiments, the determining module is configured to:

[0067] Constructing a simulation model based on material parameters of the sample circuit board before preparation;

[0068] Perform transmission line delay fitting based on the simulated delay and simulated phase output by the simulation model and the scattering parameters, and train the equivalent dielectric constant in the simulation model;

[0069] Perform insertion loss fitting and return loss fitting in a high frequency band based on the simulated insertion loss and simulated return loss output by the simulation model and the scattering parameters, and train the equivalent loss factor and equivalent copper roughness in the simulation model;

[0070] Fitting the insertion loss in the low frequency band based on the simulated insertion loss in the low frequency band output by the simulation model and the scattering parameters, and training the equivalent conductivity in the simulation model;

[0071] The simulation model is updated based on the equivalent parameters obtained through training to obtain a target simulation model.

[0072] In some embodiments, the apparatus further comprises:

[0073] A slicing module, configured to slice the sample circuit board to obtain sample circuit board slices;

[0074] Acquiring slice data of the sample circuit board slice;

[0075] The determination module is configured to construct a simulation model based on the slicing data and material parameters of the sample circuit board before preparation.

[0076] In some embodiments, the slice data includes at least one of the following: line width, etching angle, and circuit board thickness.

[0077] In some embodiments, the apparatus further comprises:

[0078] An adjustment module, configured to perform transmission line impedance fitting based on material parameters of the sample circuit board before preparation and the scattering parameters, and adjust the slice data;

[0079] The determination module is configured to construct a simulation model based on the adjusted slicing data and material parameters of the sample circuit board before preparation.

[0080] According to a third aspect of an embodiment of the present disclosure, a simulation device is provided, including:

[0081] processor;

[0082] a memory configured to store processor-executable instructions;

[0083] Wherein, the processor is configured to: implement the steps in any one of the simulation methods in the first aspect mentioned above when executed.

[0084] According to a fourth aspect of an embodiment of the present disclosure, a non-temporary computer-readable storage medium is provided. When instructions in the storage medium are executed by a processor of a simulation device, the device is enabled to perform the steps of any one of the simulation methods in the first aspect above.

[0085] The technical solution provided by the embodiments of the present disclosure may have the following beneficial effects:

[0086] The present disclosure provides a simulation method, the method comprising: obtaining a sample circuit board; the sample circuit board has a transmission line to be tested; obtaining the scattering parameters of the transmission line to be tested in the sample circuit board; fitting based on the scattering parameters and the material parameters of the sample circuit board before preparation to obtain a target simulation model; inputting the material parameters of the target circuit board before preparation into the target simulation model to obtain the equivalent parameters of the material parameters after the target circuit board is prepared. In the present disclosure, simulation fitting is performed based on the scattering parameters of the sample circuit board and the material parameters of the sample circuit board before preparation to obtain a target simulation model that can output the equivalent parameters of the material parameters after preparation. In this way, the equivalent parameters of the material parameters can be quickly obtained based on the target simulation model, and the simulation accuracy of board-level SI (Signal Integrity), PI (Power Integrity) and EMC (electromagnetic compatibility) can be improved based on the equivalent parameters. In addition, by comparing the equivalent parameters output by the target simulation model with the material parameters of the circuit board provided by the supplier before preparation, the changes in the various material parameters of each substrate of the circuit board after the processing technology can also be obtained.

[0087] It is to be understood that the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the present disclosure. BRIEF DESCRIPTION OF THE DRAWINGS

[0088] The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the present disclosure and, together with the description, serve to explain the principles of the present disclosure.

[0089] Figure 1 is a flow chart of a simulation method according to an exemplary embodiment;

[0090] Figure 2 is a schematic diagram of a transmission line to be tested on a sample circuit board according to an exemplary embodiment;

[0091] Figure 3 is a schematic diagram of a transmission line to be tested on an HDI board according to an exemplary embodiment;

[0092] Figure 4 is a schematic diagram of a transmission line to be tested on an FPC board according to an exemplary embodiment;

[0093] Figure 5 is a test flow chart of a transmission line to be tested in a sample circuit board according to an exemplary embodiment;

[0094] Figure 6is a simulation curve diagram of scattering parameter performance of a transmission line to be tested measured according to an exemplary embodiment;

[0095] Figure 7 is a schematic diagram showing comparison of test results of a first transmission line and a second transmission line according to an exemplary embodiment;

[0096] Figure 8 is a schematic diagram showing comparison of test results of a first transmission line and a third transmission line according to an exemplary embodiment;

[0097] Fig. 9 is a schematic diagram of time domain impedance data of a transmission line to be tested according to an exemplary embodiment;

[0098] Fig.10 is a schematic diagram of comparing time domain impedance data of a transmission line to be tested according to an exemplary embodiment;

[0099] Fig.11 is a schematic diagram of a simulation design process according to an exemplary embodiment;

[0100] Fig.12 is a schematic diagram of a slice of an HDI board according to an exemplary embodiment;

[0101] Fig.13 is a schematic diagram of a slice of an FPC board according to an exemplary embodiment;

[0102] Fig.14 is a schematic diagram showing an actual line width and an etching angle according to an exemplary embodiment;

[0103] Fig.15 is a flow chart showing a method of obtaining equivalent parameters by looping back through a simulation module according to an exemplary embodiment;

[0104] Fig.16 is a block diagram of a simulation device according to an exemplary embodiment;

[0105] Fig.17 is a block diagram of an electronic device 800 according to an exemplary embodiment;

[0106] Fig.18 It is a hardware structure block diagram of an electronic device according to an exemplary embodiment. DETAILED DESCRIPTION

[0107] Exemplary embodiments will be described in detail herein, examples of which are shown in the accompanying drawings. When the following description refers to the drawings, the same numbers in different drawings represent the same or similar elements unless otherwise indicated. The embodiments described in the following exemplary embodiments do not represent all embodiments consistent with the present disclosure. Instead, they are merely examples of devices and methods consistent with some aspects of the present disclosure as detailed in the appended claims.

[0108] Figure 1 is a flow chart of a simulation method according to an exemplary embodiment. Figure 1 As shown, the method mainly includes the following steps:

[0109] In step 11, a sample circuit board is obtained; the sample circuit board has a transmission line to be tested;

[0110] In step 12, obtaining the scattering parameters of the transmission line to be tested in the sample circuit board;

[0111] In step 13, fitting is performed based on the scattering parameters and the material parameters of the sample circuit board before preparation to obtain a target simulation model;

[0112] In step 14, the material parameters of the target circuit board before being manufactured are input into the target simulation model to obtain equivalent parameters of the material parameters after the target circuit board is manufactured.

[0113] In some embodiments, the sample circuit board may be an HDI board or an FPC board. The sample circuit board is a laminated circuit board, and the board body of the sample circuit board is formed by laminating a substrate, a cover film, a reinforcing plate and other auxiliary materials.

[0114] The disclosed embodiments do not limit the composition of the substrate of the sample circuit board. In some examples, the sample circuit board includes a solid copper plate or a mesh copper plate. The solid copper plate or the mesh copper plate is not pressed with other substrates, which can reduce the manufacturing cost of the test board.

[0115] In some embodiments, the transmission line to be tested includes a first transmission line and a second transmission line; the first transmission line includes a first de-embedding reference line; the second transmission line includes a second de-embedding reference line and a first test line; wherein the first de-embedding reference line and the second de-embedding reference line have the same length and width.

[0116] In some other embodiments, the transmission line to be tested further includes a third transmission line; the third transmission line includes a third de-embedding reference line and a second test line; wherein the first de-embedding reference line, the second de-embedding reference line and the third de-embedding reference line have the same length and width; and the first test line and the second test line have different widths. The present disclosure designs three groups of transmission lines to be tested, namely the first transmission line, the second transmission line and the third transmission line, wherein the first transmission line is used as a de-embedding line, and the second transmission line and the third transmission line are used as test lines. In the present disclosure, each transmission line to be tested can be in the form of a single-ended routing or a differential routing. In this embodiment, the single-ended routing form is used as an example for explanation.

[0117] The first de-embedding reference line, the second de-embedding reference line and the third de-embedding reference line may be 50 ohm signal lines and may be manufactured by an etching process.

[0118] Figure 2 FIG. 1 is a schematic diagram of a transmission line to be tested on a sample circuit board according to an exemplary embodiment. Figure 2 As shown, the transmission line to be tested includes a first transmission line 20, a second transmission line 30 and a third transmission line 40. The length of the first transmission line 20 is designed to be 50 mm. The length of the second de-embedding reference line in the second transmission line 30 and the third de-embedding reference line in the third transmission line 40 is also 50 mm. The length of the second transmission line 30 and the third transmission line 40 is designed to be 200 mm. Preferably, the width of the first test line of the second transmission line 30 and the second test line of the third transmission line 40 are different, and the width of the first test line can be the same as the width of the first transmission line 20. In this embodiment, the width of the second test line of the third transmission line 40 can be three times the width of the first transmission line 20, which helps to appropriately increase the return loss of the signal and facilitates subsequent simulation fitting.

[0119] It should be noted that for laminated circuit boards with multi-layer board design, each layer has a transmission line to be tested for use in subsequent simulation fitting. For HDI board routing design, it is necessary to consider the influence of the residual copper rate on the dielectric thickness after the board is pressed, and it needs to be consistent with the actual residual copper rate. At the same time, in order to avoid the influence of the glass fiber cloth of the medium on the dielectric thickness after the HDI board is pressed, in this embodiment, the axis of the circuit board and the grid of the glass fiber cloth form a certain angle to reduce its influence. Specifically, the angle formed by the axis of the circuit board and the grid of the glass fiber cloth can be 45°. Figure 3 is a schematic diagram of a transmission line to be tested on an HDI board according to an exemplary embodiment. Figure 3 As shown, the angle formed by the transmission line to be tested and the grid of the glass fiber cloth is about 45°.

[0120] It should be noted that the processing method of FPC boards is more complicated than that of hard boards. In order to facilitate the simulation fitting of FPC boards, circuit boards with simpler laminate structures and no complex structures such as multiple adhesive layers pressed together can be selected as sample circuit boards. Figure 4 is a schematic diagram of a transmission line to be tested on an FPC board according to an exemplary embodiment. Figure 4 As shown, there are multiple first transmission lines 20, and the first de-embedding reference lines 21 in the multiple first transmission lines 20 are the same. There are multiple second transmission lines 30, and the second de-embedding reference lines 31 in the multiple second transmission lines 30 are the same, and the first test lines 32 in the multiple second transmission lines 30 are the same.

[0121] The FPC board can adopt a variety of combinations to meet the requirements of design variables, such as adding mesh copper, air layer (Airgap) or EMI mode. In some examples, the FPC board includes a solid copper plate and an air layer (Airgap) arranged in layers. Alternatively, the FPC board includes a solid copper plate and an electromagnetic shielding film (EMI film) arranged in layers. Alternatively, the FPC board includes a solid copper plate, an Airgap and an EMI film arranged in layers. Alternatively, the FPC board includes a mesh copper plate and an Airgap arranged in layers. Alternatively, the FPC board includes a mesh copper plate and an EMI film arranged in layers. Alternatively, the FPC board includes a mesh copper plate, an Airgap and an EMI film arranged in layers. Alternatively, the FPC board can also be a solid copper plate or a mesh copper plate.

[0122] Furthermore, if the FPC board has structures such as silver film, air layer (Airgap), grid copper plate, etc., the structures in the FPC board can be replaced equivalently to simplify the complex structure. For example, the silver film composed of a composite material can be replaced by an equivalent layer of copper, and the influence of the silver film on the transmission line to be tested can be replaced by the equivalent copper foil conductivity. In this way, the simulation model can be simplified by simplifying the circuit board structure.

[0123] In some examples, such as Figure 4 As shown, the width of the first de-embedding reference line 21 is the same as the width of the second de-embedding reference line 31. It should be noted that the second de-embedding reference line 31 in the second transmission line 30 is separated by the first test line 32, and the length of the second de-embedding reference line 31 on the left and right sides of the first test line 32 is half the length of the first de-embedding reference line 21. In this way, the de-embedding reference lines on both sides of the first test line 32 can be symmetrical and have the same width as the first de-embedding reference line 21, meeting the requirements of the 2×Thru de-embedding process, so that the scattering parameters of the first test line 32 can be accurately measured.

[0124] In some examples, such as Figure 4As shown, the first transmission line 20 also includes two first connecting components 22, and the second transmission line 30 also includes two second connecting components 33. The first connecting components 22 and the second connecting components 33 are both RF connectors, and the first connecting components 22 and the second connecting components 33 can be used to connect to a test instrument with a RF connector.

[0125] In some other examples, the first connection component 22 and the second connection component 33 are both probe station test points, and the first connection component 22 and the second connection component 33 can be used to connect to a test instrument having a probe station.

[0126] In some examples, such as Figure 4 As shown, the first transmission line 20 also includes two third connecting components 23, and the second transmission line 30 also includes two fourth connecting components 34. The third connecting components 23 and the fourth connecting components 34 are both probe station test points, and the third connecting components 23 and the fourth connecting components 34 can be used to connect to a test instrument with a probe station.

[0127] In some other examples, the third connection component 23 and the fourth connection component 34 are both RF connectors, and the third connection component 23 and the fourth connection component 34 can be used to connect to a test instrument having a RF connector.

[0128] The types of the third connecting component 23 and the fourth connecting component 34 are different from those of the first connecting component 22 and the second connecting component 33 , so that the transmission line to be tested can be suitable for different test instruments.

[0129] Thus, if the test instrument has both a radio frequency connector and a probe station (or two types of test instruments), the test instrument can be connected to different connection components to perform two measurements. If the test results of the transmission line to be tested are the same, accidental errors in the test results can be eliminated.

[0130] In some embodiments, obtaining the scattering parameters of the transmission line to be tested in the sample circuit board includes:

[0131] Acquire scattering parameters of the first transmission line and the second transmission line;

[0132] The scattering parameters of the first test line in the second transmission line are obtained by de-embedding.

[0133] In the disclosed embodiment, the scattering parameters of the transmission line to be tested in the sample circuit board are obtained by a test instrument. Here, the test instrument may be a vector network analyzer, a TDR time domain reflectometer, or other test instruments with a radio frequency connector or a probe station.

[0134] In some embodiments, the method further comprises:

[0135] acquiring insertion loss, return loss and phase of the first test line according to the scattering parameter of the first test line;

[0136] The scattering parameters of the first test line are verified in the frequency domain based on the insertion loss, return loss and phase of the first test line.

[0137] In some embodiments, the method further comprises:

[0138] The test impedance of the first test line is obtained by measuring with a time domain reflectometer;

[0139] acquiring a transmission line impedance of the first test line according to a scattering parameter of the first test line;

[0140] A scattering parameter of the first test line is verified in the time domain based on the test impedance and the transmission line impedance.

[0141] Figure 5 is a test flow chart of a transmission line to be tested in a sample circuit board according to an exemplary embodiment. Figure 5 As shown, the test process mainly includes the following steps:

[0142] In step 51, a scattering parameter of a first transmission line is obtained by testing;

[0143] In step 52, the effective bandwidth of the first transmission line is verified; if the verification is successful, step 53 is executed; if the verification is not successful, step 51 is executed.

[0144] Specifically, based on the scattering parameters of the first transmission line, the effective bandwidth of the first transmission line is verified; if the effective bandwidth of the first transmission line fails the verification, it is necessary to retest the first transmission line or check whether there are any erroneous operations during the test process, such as checking the test connection method and routing conditions.

[0145] In step 53 , the frequency domain and time domain consistency of the first transmission line is verified; if the verification fails, step 54 is executed.

[0146] If the consistency of the test data within the effective bandwidth supported by the transmission line to be tested is too poor, it is necessary to retest or check whether there are any erroneous operations during the test, such as checking the test connection method and routing conditions.

[0147] In some examples, a vector network analyzer is used to test the transmission line to obtain the frequency domain parameters of the transmission line, such as insertion loss, return loss, etc. Since the test is affected by some environmental factors, instrument aging, test cable loss, etc., the effective bandwidth of the actual test cannot reach the theoretical test bandwidth value of the instrument, thereby affecting the accuracy of the test data. Therefore, it is necessary to verify the test data of the transmission line to be tested. The verification method includes verifying the effective bandwidth value of the test data and the consistency of the frequency domain parameters and the time domain parameters.

[0148] Figure 6 is a simulation curve diagram of the scattering parameter performance of the transmission line to be tested according to an exemplary embodiment. Figure 6 In the figure, the horizontal axis represents the frequency in GHz, and the vertical axis represents the amplitude value of S11 or S21 in dB. S11 or S21 is one of the scattering parameters, where S11 represents the reflection coefficient and S21 represents the transmission coefficient. The intersection of the S11 and S21 curves represents the effective bandwidth value supported by the test data. Usually, the frequency corresponding to the first intersection of the S11 and S21 curves is taken as the effective bandwidth value. Figure 6 As shown, the effective bandwidth value corresponding to the first intersection point of the S11 and S21 curves is approximately 10 GHz, which means that the effective bandwidth range supported by the transmission line to be tested is 0-10 GHz.

[0149] In order to ensure good consistency of the test data, it is necessary to further verify the mutual difference of the scattering parameters obtained from the test, ensure the symmetry in the two transmission directions of the transmission line to be tested, and check the consistency of the IL (insertion loss) of the transmission line to be tested, the consistency of the RL (return loss) of the transmission line to be tested, the consistency of the Phase (phase) in the opposite direction of the transmission line to be tested, and the consistency of the Delay (delay) in the opposite direction of the transmission line to be tested. The insertion loss curve, return loss curve, phase curve and delay curve of the first transmission line (as a de-embedded line) in the transmission line to be tested in the two transmission directions S12 and S21 are compared. When the insertion loss curve, return loss curve, phase curve and delay curve on S12 and S21 are consistent, it can be determined that the test data of the transmission line to be tested is consistent.

[0150] Figure 7 is a schematic diagram showing a comparison of test results of a first transmission line and a second transmission line according to an exemplary embodiment. Figure 8 is a schematic diagram showing a comparison of test results of a first transmission line and a third transmission line according to an exemplary embodiment. Figure 7 and Figure 8As shown, (A) is a comparison of the insertion loss curves of the first transmission line and the second transmission line, (B) is a comparison of the return loss curves of the first transmission line and the second transmission line, (C) is a comparison of the phase curves of the first transmission line and the second transmission line, and (D) is a comparison of the schematic diagrams of the group delay curves of the first transmission line and the second transmission line; (E) is a comparison of the insertion loss curves of the first transmission line and the third transmission line, (F) is a comparison of the return loss curves of the first transmission line and the third transmission line, (G) is a comparison of the phase curves of the first transmission line and the third transmission line, and (H) is a comparison of the schematic diagrams of the group delay curves of the first transmission line and the third transmission line. Figure 7 and Figure 8 As shown, (A) and (E) show that the insertion loss error of the first transmission line is small, (B) and (F) show that the return loss error of the first transmission line is small, (C) and (G) show that the phase error of the first transmission line is small, and (D) and (H) show that the group delay error of the first transmission line is small. In this way, the errors of various results are ensured to be within a certain range. The smaller the error, the higher the accuracy of subsequent simulation fitting.

[0151] In a specific example, the error range of the insertion loss is ±1%, the error range of the return loss is ±15%, the error range of the phase is ±1%, and the error range of the group delay is ±15%.

[0152] In step 54, a time domain impedance test is performed on the first transmission line by TDR; here, if the verification fails, step 54 is executed to perform the time domain impedance test on the first transmission line again.

[0153] In the embodiment of the present disclosure, in addition to verifying the consistency of the frequency domain parameters, it is also necessary to further verify the consistency of the time domain parameters. The time domain impedance analysis of the transmission line to be tested is performed using TDR. The time domain impedance test diagram of the transmission line to be tested is as follows: Fig. 9 shown.

[0154] By comparing the time domain impedance data obtained through the TDR test with the time domain impedance data obtained based on the scattering parameters of the first transmission line, the consistency of the time domain parameters can be determined. Fig.10 is a schematic diagram of comparing the time domain impedance data of the transmission line to be tested according to an exemplary embodiment. To determine the consistency of the time domain parameters, it is necessary to ensure that the impedance of the comparison curve remains continuous within the tolerance range, and at the same time ensure that the delay is also within the tolerance range. Fig.10 As shown, the time domain impedance data obtained by TDR testing is L1, the time domain impedance data obtained based on the scattering parameters of the first transmission line is L2, the comparison curve of the time domain impedance data of the transmission line to be tested remains continuous within the tolerance range, and the time delay is also within the tolerance range.

[0155] In step 55, the scattering parameters of the second transmission line are obtained by testing;

[0156] In step 56 , the effective bandwidth of the second transmission line is verified; if the verification is successful, step 57 is executed; otherwise, step 55 is executed.

[0157] Specifically, based on the scattering parameters of the second transmission line, the effective bandwidth of the second transmission line is verified; if the effective bandwidth of the second transmission line fails the verification, it is necessary to retest the second transmission line or check whether there are any erroneous operations during the test process, such as checking the test connection method and routing conditions.

[0158] In step 57 , the frequency domain and time domain consistency of the second transmission line is verified; if the verification fails, step 58 is executed.

[0159] In step 58, a time domain impedance test is performed on the second transmission line by TDR; if the verification fails, step 59 is executed to perform the time domain impedance test on the second transmission line again.

[0160] It should be noted that steps 51 to 54 and steps 55 to 58 can be processed in parallel. The specific test and verification process of the second transmission line in steps 55 to 58 can be understood by referring to the specific test and verification process of the first transmission line in steps 51 to 54, and will not be repeated here.

[0161] If both step 53 and step 57 are verified to be successful, step 59 is executed.

[0162] In step 59, a de-embedding process is performed to obtain scattering parameters of the first test line in the second transmission line;

[0163] In step 60, verifying the frequency domain and time domain consistency of the first test line;

[0164] Here, if the verification is successful, step 61 is executed, and if the verification is not successful, step 62 is executed.

[0165] In step 61, simulation fitting is performed based on the scattering parameters of the first test line;

[0166] In step 62, the test instrument or the de-embedding software is replaced to perform the test and de-embedding process again.

[0167] De-embedding is performed based on the scattering parameters of the first transmission line and the scattering parameters of the second transmission line obtained by the test. It should be noted that when the transmission line to be tested also includes a third transmission line, the test process of the transmission line to be tested also includes a test and verification process of the third transmission line, thereby also including de-embedding of the scattering parameters of the third transmission line. In this way, the scattering parameters of the first test line and the scattering parameters of the second test line after de-embedding can be obtained.

[0168] The de-embedding tool can be selected according to the needs. For example, the ZcorrectedDeembGUI open source software developed by MATLAB can be selected for de-embedding processing.

[0169] The scattering parameters of the first test line and the scattering parameters of the second test line obtained by de-embedding processing also need to be verified for effective bandwidth to ensure that their effective bandwidth is still within an acceptable range. In a specific example, the error between the effective bandwidth of the data obtained by de-embedding processing and the effective bandwidth of the data without de-embedding processing does not exceed 20%. At the same time, it is also necessary to verify the consistency of the scattering parameters of the first test line and the scattering parameters of the second test line in the frequency domain and the time domain. Here, the consistency verification process of the scattering parameters of the first test line and the frequency domain parameters of the second test line is consistent with the consistency verification process of the frequency domain parameters of the first transmission line, and the consistency verification process of the scattering parameters of the first test line and the time domain parameters of the second test line is consistent with the consistency verification process of the time domain parameters of the first transmission line.

[0170] It should be noted that, when the transmission line to be tested further includes a third transmission line, step 61 specifically includes performing simulation fitting based on the scattering parameters of the first test line and the scattering parameters of the second test line.

[0171] In the embodiment of the present disclosure, fitting is performed based on the scattering parameters of the first test line, the scattering parameters of the second test line, the material parameters of the sample circuit board before preparation, and the circuit board slice data to obtain the target simulation model. The specific simulation design process is as follows Fig.11 As shown, Fig.11 As shown in the figure, the simulation design process mainly includes the following steps:

[0172] In step 71, slice data is input;

[0173] In some embodiments, the method further includes: slicing the sample circuit board to obtain sample circuit board slices; acquiring slicing data of the sample circuit board slices; and constructing a simulation model based on the slicing data and material parameters of the sample circuit board before preparation.

[0174] It should be noted that the sample circuit board may be a batch of circuit boards with the same transmission line design. In this way, the sample circuit boards for testing and slicing may not be the same circuit board, and the testing and slicing of the sample circuit boards may be processed in parallel, thereby reducing the time required for simulation.

[0175] Table 1

[0176]

[0177] Table 1 shows some parameters involved in the simulation, which are the material parameters of each substrate provided by the supplier and the slicing data of the sample circuit board. The parameters shown in Table 1 basically cover the parameters with greater influence on SI, PI and EMI simulation.

[0178] The material parameters of each substrate provided by the supplier include dielectric constant, relative dielectric constant, loss factor, conductivity, relative magnetic permeability, copper roughness and skin depth. Since the sample circuit board in the present disclosure is a laminated circuit board, the material parameters of each substrate provided by the supplier are the material parameters of the sample circuit board before preparation.

[0179] The slice data of the sample circuit board includes line width, etching angle and circuit board thickness.

[0180] The sample circuit board is sliced, and the trace line width, etching angle and stacking thickness of multiple areas of the sample circuit board slice are extracted, and the data are normalized. Fig.12 and Fig.13 The slice diagrams of HDI board and FPC board are shown respectively.

[0181] In other embodiments, the sample circuit board may not be sliced, and the line width, etching angle, and circuit board thickness of the sample circuit board may be obtained based on the process preparation parameters of the sample circuit board. In other words, the slicing data of the sample circuit board is measured data, which is more reference-oriented than the process preparation parameters of the sample circuit board and can better reflect the actual situation of the sample circuit board, so that the simulation model obtained using the slicing data has higher simulation accuracy.

[0182] The schematic diagram of actual line width and etching angle is shown in Fig.14 As shown. The slice data of multiple sample circuit board slices are normalized to obtain the corrected equivalent line width and corrected average etching angle. The corrected equivalent line width and corrected average etching angle are calculated by the following formula for simulation fitting.

[0183] Corrected equivalent line width

[0184] Corrected average etching angle

[0185] In some embodiments, before constructing the simulation model based on the slice data and the material parameters of the sample circuit board before preparation, the method further includes: performing transmission line impedance fitting based on the material parameters of the sample circuit board before preparation and the scattering parameters, and adjusting the slice data;

[0186] Before constructing the simulation model based on the slicing data and the material parameters of the sample circuit board before preparation, it includes: constructing the simulation model based on the adjusted slicing data and the material parameters of the sample circuit board before preparation.

[0187] In step 72, the reverse impedance is obtained by using the FEM model algorithm;

[0188] In step 73, the test impedance obtained by the TDR test is input;

[0189] In step 74, it is determined whether the impedances are consistent; if it is determined to be consistent, step 76 is executed; if it is determined to be inconsistent, step 77 is executed;

[0190] Based on the dielectric constant of the material parameters of the sample circuit board before preparation, the inverse impedance is obtained by the FEM (Finite Element Method) model algorithm, and compared with the test impedance of the first test line and the second test line obtained by the TDR test to determine whether the inverse impedance and the test impedance are consistent. If they are inconsistent, the equivalent line width obtained by simulation is adjusted, and then impedance fitting is performed based on the adjusted equivalent line width until the impedance is consistent.

[0191] In some embodiments, fitting is performed based on the scattering parameters and the material parameters of the sample circuit board before preparation to obtain a target simulation model, including:

[0192] Constructing a simulation model based on material parameters of the sample circuit board before preparation;

[0193] Perform transmission line delay fitting based on the simulated delay and simulated phase output by the simulation model and the scattering parameters, and train the equivalent dielectric constant in the simulation model;

[0194] Perform insertion loss fitting and return loss fitting in a high frequency band based on the simulated insertion loss and simulated return loss output by the simulation model and the scattering parameters, and train the equivalent loss factor and equivalent copper roughness in the simulation model;

[0195] Fitting the insertion loss in the low frequency band based on the simulated insertion loss in the low frequency band output by the simulation model and the scattering parameters, and training the equivalent conductivity in the simulation model;

[0196] The simulation model is updated based on the equivalent parameters obtained through training to obtain a target simulation model.

[0197] In step 75, input the line length information of the transmission line to be tested;

[0198] In step 76, a simulation model is constructed;

[0199] In step 77, the line width is adjusted;

[0200] Since the sample circuit board for testing and slicing may not be the same circuit board, considering the possible error in the line width obtained by measuring the sample circuit board slice, it will have a great impact on the transmission line impedance and return loss. Therefore, in order to improve the fitting accuracy of material parameters, it is necessary to reasonably fine-tune the line width. It should be noted that the adjustment of the equivalent line width needs to refer to the range of the line width in the slicing data. In other words, the adjusted equivalent line width cannot fall outside the line width range in the slicing data.

[0201] In step 78, delay and phase simulation is performed through the simulation model;

[0202] In step 79, the time delay and phase results after de-embedding of the transmission line to be tested are input;

[0203] Based on the slice data and the material parameters of the sample circuit board before preparation and the construction of the simulation model, the line length information of the transmission line to be tested is input into the simulation model, and the delay and phase of the transmission line to be tested are simulated by the simulation model to output the simulated delay and simulated phase of the transmission line to be tested. The scattering parameters of the first test line and the scattering parameters of the second test line are obtained by de-embedding processing. Based on the scattering parameters of the first test line and the scattering parameters of the second test line, the delay and phase results of the second transmission line after de-embedding and the delay and phase results of the third transmission line after de-embedding can be obtained respectively. In a specific example, the length of the transmission line to be tested is 200mm, and the input line length information is 200mm.

[0204] The transmission line delay fitting is performed based on the simulated delay and simulated phase output by the simulation model and the scattering parameters, and the equivalent dielectric constant in the simulation model is trained, including: the transmission line delay fitting and phase fitting are performed based on the simulated delay and simulated phase output by the simulation model and the scattering parameters of the first test line and the scattering parameters of the second test line, and the equivalent dielectric constant in the simulation model is trained. Here, TDR can be used to perform time domain impedance analysis on the first test line and the second test line based on the scattering parameters of the first test line and the scattering parameters of the second test line to obtain the delay result after the second transmission line is de-embedded and the delay result after the third transmission line is de-embedded.

[0205] In step 80, it is determined whether the delays are consistent; if it is determined to be consistent, step 81 is executed; if it is determined to be inconsistent, step 82 is executed;

[0206] In step 81, the insertion loss and return loss of the high frequency band are simulated by using a simulation model;

[0207] In step 82, the equivalent dielectric constant is adjusted;

[0208] The simulated impedance output by the simulation model is compared with the time domain impedance data of the first test line and the second test line obtained by the TDR test. If the impedances are consistent, the insertion loss and return loss simulations are continued. If the impedances are inconsistent, the equivalent dielectric constant in the simulation model is adjusted, and then the delay simulation is continued based on the adjusted equivalent dielectric constant until the delay is consistent.

[0209] The time domain impedance test graph obtained by TDR test is a curve graph of impedance and time delay. Based on the impedance in the time domain impedance test graph, the equivalent line width can be trained, and based on the time delay in the time domain impedance test graph, the equivalent dielectric constant can be trained. The availability of test data can only be guaranteed when the impedance and time delay in the time domain impedance test graph are highly consistent with the impedance and time delay obtained by simulation.

[0210] It should be noted that since the time domain impedance test diagram obtained by the TDR test is a curve diagram of impedance and delay, the transmission line impedance will also be involved in the process of delay fitting. At this time, the equivalent line width can also be adjusted based on the transmission line impedance.

[0211] In step 83, the insertion loss and return loss of the transmission line to be tested after de-embedding are input;

[0212] After ensuring the consistency of the time domain, the frequency domain parameters are further simulated and fitted, and the insertion loss and return loss are simulated through the simulation model to output the simulated insertion loss and simulated return loss of the transmission line to be tested. The scattering parameters of the first test line and the second test line are obtained by de-embedding processing. Based on the scattering parameters of the first test line and the scattering parameters of the second test line, the insertion loss and return loss of the second transmission line after de-embedding and the insertion loss and return loss of the third transmission line after de-embedding can be obtained respectively.

[0213] The insertion loss and return loss are fitted in the high-frequency band based on the simulated insertion loss and simulated return loss output by the simulation model and the scattering parameters, and the equivalent loss factor and equivalent copper roughness in the simulation model are trained, including: the insertion loss and return loss are fitted in the high-frequency band based on the simulated insertion loss and simulated return loss output by the simulation model and the scattering parameters of the first test line and the scattering parameters of the second test line, and the equivalent loss factor and equivalent copper roughness in the simulation model are trained.

[0214] In the high frequency band, the time domain and frequency domain cross fitting method can be used to train the equivalent dielectric constant and equivalent line width, and observe the frequency domain phase, time domain delay and time domain impedance at the same time, so that the errors of frequency domain phase, time domain delay and time domain impedance meet the requirements. After the equivalent dielectric constant and equivalent line width training is completed, the insertion loss simulation can be performed through the following two schemes:

[0215] Solution 1: Keep the equivalent copper roughness at 0, i.e., smooth model, and adjust the equivalent loss factor to simulate the insertion loss;

[0216] Solution 2: The equivalent loss factor remains unchanged after material adjustment, and the Hurry snowball model is used to simulate the insertion loss based on the equivalent copper roughness.

[0217] It should be noted that in solution 2, other roughness models (such as the Hammerstad sawtooth model) may also be used for simulation.

[0218] In step 84, it is determined whether the insertion loss and return loss of the high frequency band are consistent; if they are consistent, step 85 is executed; if they are inconsistent, step 86 is executed;

[0219] In step 85, it is determined again whether the impedance and the delay are consistent; if it is determined to be consistent, step 87 is executed; if it is determined to be inconsistent, step 82 is executed;

[0220] In step 86, the equivalent loss factor and the equivalent copper skin roughness are adjusted;

[0221] The simulated insertion loss and simulated return loss of the high frequency band output by the simulation model are compared with the insertion loss and return loss obtained through the scattering parameters of the first test line and the scattering parameters of the second test line. If the insertion loss and return loss of the high frequency band are consistent, the impedance and delay simulation are performed again based on the trained equivalent parameters. If the insertion loss and return loss of the high frequency band are inconsistent, the equivalent loss factor and equivalent copper roughness in the simulation model are adjusted, and then the insertion loss and return loss simulation of the high frequency band is continued based on the adjusted equivalent loss factor and equivalent copper roughness until the insertion loss and return loss of the high frequency band are consistent.

[0222] In step 87, the insertion loss simulation of the low frequency band is performed by using the simulation model;

[0223] The impedance and time delay are simulated again based on the trained equivalent parameters, and it is judged again whether the impedance and time delay are consistent. If the impedance and time delay are consistent, the insertion loss simulation of the low frequency band is continued. If they are inconsistent, the equivalent dielectric constant in the simulation model is adjusted, and then the simulation is continued based on the adjusted equivalent dielectric constant.

[0224] It should be noted that since the time domain and frequency domain cross-fitting method is used in the high frequency band, the transmission line impedance will also be involved in the process of time delay fitting. Therefore, after the error after insertion loss fitting meets the requirements, the equivalent dielectric constant and equivalent line width can be adjusted again based on the time domain impedance to further improve the fitting accuracy.

[0225] In step 88, the insertion loss of the transmission line to be tested in the low frequency band after de-embedding is input;

[0226] In step 89, it is determined whether the insertion loss and return loss of the low frequency band are consistent; if they are consistent, step 90 is executed; if they are inconsistent, step 91 and step 82 are executed;

[0227] In step 90, output equivalent parameters;

[0228] In step 91, the equivalent conductivity is adjusted.

[0229] The insertion loss in the low frequency band is fitted based on the simulated insertion loss in the low frequency band output by the simulation model and the scattering parameters, and the equivalent conductivity in the simulation model is trained, including: the insertion loss in the low frequency band is fitted based on the simulated insertion loss in the low frequency band output by the simulation model and the scattering parameters of the first test line and the scattering parameters of the second test line, and the equivalent conductivity in the simulation model is trained.

[0230] The simulated insertion loss of the low-frequency band output by the simulation model is compared with the insertion loss of the low-frequency band obtained by the scattering parameters of the first test line and the scattering parameters of the second test line. If the insertion loss of the low-frequency band is consistent, the trained equivalent parameters are output; if the insertion loss of the low-frequency band is inconsistent, the equivalent conductivity and equivalent dielectric constant in the simulation model are adjusted, and then the insertion loss simulation of the low-frequency band is continued based on the adjusted equivalent conductivity until the insertion loss of the low-frequency band is consistent.

[0231] In the disclosed embodiment, the parameters of the frequency domain fitting of the transmission line to be tested mainly include: insertion loss, return loss, phase and group delay. Since the insertion loss is mainly affected by the loss factor and the roughness of the copper skin, the equivalent loss factor and the equivalent copper skin roughness can be trained by fitting the insertion loss; since the return loss is mainly affected by the line width, dielectric constant, loss factor and the roughness of the copper skin, the equivalent line width, equivalent dielectric constant, equivalent loss factor and equivalent copper skin roughness can be trained by fitting the return loss; since the phase is mainly affected by the dielectric constant and is also slightly affected by the loss factor, the equivalent dielectric constant and the equivalent loss factor can be trained by fitting the phase; since the group delay is mainly affected by the dielectric constant, the equivalent dielectric constant can be trained by fitting the group delay; and the insertion loss in the low frequency band (less than 100MHz) is mainly affected by the conductivity, so the equivalent conductivity can be trained by fitting the insertion loss in the low frequency band. Fig.15This is a flowchart of obtaining equivalent parameters through looping through a simulation module according to an exemplary embodiment. The equivalent parameters can be adjusted based on the fitting of the frequency domain and time domain. The fitting of the frequency domain and time domain can be continued based on the adjusted equivalent parameters until the adjusted equivalent parameters make the fitting of the frequency domain and time domain consistent. Finally, the simulation parameters that make the fitting of the frequency domain and time domain consistent are the equivalent parameters output by the simulation module. The simulation, training and fitting of the equivalent parameters in the frequency domain and time domain can be parameterized. Fig.11 The simulation design process is shown in the figure and will not be elaborated here.

[0232] Since different simulation software uses different solvers, even if the same simulation parameters are used, the results obtained by each simulation software are different. The simulation method provided in the present disclosure can perform parameter simulation for different simulation software to obtain equivalent parameters of board-level transmission lines suitable for different simulation software.

[0233] The present disclosure provides a simulation method, the method comprising: obtaining a sample circuit board; the sample circuit board has a transmission line to be tested; obtaining the scattering parameters of the transmission line to be tested in the sample circuit board; fitting based on the scattering parameters and the material parameters of the sample circuit board before preparation to obtain a target simulation model; inputting the material parameters of the target circuit board before preparation into the target simulation model to obtain the equivalent parameters of the material parameters after the target circuit board is prepared. In the present disclosure, simulation fitting is performed based on the scattering parameters of the sample circuit board and the material parameters of the sample circuit board before preparation to obtain a target simulation model that can output the equivalent parameters of the material parameters after preparation. In this way, the equivalent parameters of the material parameters can be quickly obtained based on the target simulation model, and the simulation accuracy of board-level SI (Signal Integrity), PI (Power Integrity) and EMC (electromagnetic compatibility) can be improved based on the equivalent parameters. In addition, by comparing the equivalent parameters output by the target simulation model with the material parameters of the circuit board provided by the supplier before preparation, the changes in the various material parameters of each substrate of the circuit board after the processing technology can also be obtained.

[0234] In other embodiments, the simulation method in the embodiment of the present disclosure may be configured in a simulation device, and the simulation device may be provided in an electronic device, which is not limited in the embodiment of the present disclosure. It should be noted that the execution subject of the embodiment of the present disclosure may be a central processing unit (CPU) in the electronic device in terms of hardware, and may be a related background service in the electronic device in terms of software, which is not limited in terms of software.

[0235] Fig.16 FIG. 1 is a block diagram of a simulation device according to an exemplary embodiment. Fig.16 As shown, the simulation device 1800 is applied to electronic equipment and mainly includes:

[0236] The first acquisition module 1801 is configured to acquire a sample circuit board; the sample circuit board has a transmission line to be tested;

[0237] A testing module 1802 is configured to obtain scattering parameters of the transmission line to be tested in the sample circuit board;

[0238] A determination module 1803 is configured to perform fitting based on the scattering parameters and material parameters of the sample circuit board before preparation to obtain a target simulation model;

[0239] The simulation module 1804 is configured to input material parameters of the target circuit board before manufacture into the target simulation model to obtain equivalent parameters of the material parameters after manufacture of the target circuit board.

[0240] In some embodiments, the material parameters of the sample circuit board before preparation include at least one of the following: dielectric constant, relative dielectric constant, loss factor, conductivity, relative magnetic permeability, copper roughness and skin depth.

[0241] In some embodiments, the transmission line to be tested includes a first transmission line and a second transmission line;

[0242] The first transmission line includes a first de-embedding reference line; the second transmission line includes a second de-embedding reference line and a first test line;

[0243] The first de-embedding reference line and the second de-embedding reference line have the same length and width.

[0244] In some embodiments, the transmission line to be tested further includes a third transmission line;

[0245] The third transmission line includes a third de-embedding reference line and a second test line;

[0246] The first de-embedding reference line, the second de-embedding reference line and the third de-embedding reference line have the same length and width; and the first test line and the second test line have different widths.

[0247] In some embodiments, the testing module 1802 is configured to:

[0248] Acquire scattering parameters of the first transmission line and the second transmission line;

[0249] The scattering parameters of the first test line in the second transmission line are obtained by de-embedding.

[0250] In some embodiments, the apparatus further comprises:

[0251] A verification module 1805 is configured to obtain an insertion loss, a return loss and a phase of the first test line according to a scattering parameter of the first test line;

[0252] The scattering parameters of the first test line are verified in the frequency domain based on the insertion loss, return loss and phase of the first test line.

[0253] In some embodiments, the apparatus further comprises:

[0254] The verification module 1805 is configured to obtain the test impedance of the first test line by measuring with a time domain reflectometer;

[0255] acquiring a transmission line impedance of the first test line according to a scattering parameter of the first test line;

[0256] A scattering parameter of the first test line is verified in the time domain based on the test impedance and the transmission line impedance.

[0257] In some embodiments, the determination module 1803 is configured to:

[0258] Constructing a simulation model based on material parameters of the sample circuit board before preparation;

[0259] Performing transmission line delay fitting based on the simulated delay and simulated phase output by the simulation model and the scattering parameters of the transmission line to be tested, and training the equivalent dielectric constant in the simulation model;

[0260] Perform insertion loss fitting and return loss fitting in a high frequency band based on the simulated insertion loss and simulated return loss output by the simulation model and the scattering parameters of the transmission line to be tested, and train the equivalent loss factor and equivalent copper roughness in the simulation model;

[0261] Fitting the insertion loss in the low frequency band based on the simulated insertion loss in the low frequency band output by the simulation model and the scattering parameters of the transmission line to be tested, and training the equivalent conductivity in the simulation model;

[0262] The simulation model is updated based on the equivalent parameters obtained through training to obtain a target simulation model.

[0263] In some embodiments, the apparatus further comprises:

[0264] The second acquisition module 1806 is configured to acquire slice data of sample circuit board slices;

[0265] The determination module 1803 is configured to construct a simulation model based on the slicing data and material parameters of the sample circuit board before preparation.

[0266] In some embodiments, the slice data includes at least one of the following: line width, etching angle, and circuit board thickness.

[0267] In some embodiments, the apparatus further comprises:

[0268] An adjustment module 1807, configured to perform transmission line impedance fitting based on the material parameters of the sample circuit board before preparation and the scattering parameters, and adjust the slice data;

[0269] The determination module 1803 is configured to construct a simulation model based on the adjusted slicing data and material parameters of the sample circuit board before preparation.

[0270] Fig.17 8 is a block diagram of an electronic device 800 according to an exemplary embodiment. For example, the device 800 may be a mobile phone, a mobile computer, etc.

[0271] Reference Fig.17 , device 800 may include one or more of the following components: a processing component 802 , a memory 804 , a power component 806 , a multimedia component 808 , an audio component 810 , an input / output (I / O) interface 812 , a sensor component 814 , and a communication component 816 .

[0272] The processing component 802 generally controls the overall operation of the device 800, such as operations associated with display, phone calls, data communications, camera operations, and recording operations. The processing component 802 may include one or more processors 820 to execute instructions to complete all or part of the steps of the above-mentioned method. In addition, the processing component 802 may include one or more modules to facilitate the interaction between the processing component 802 and other components. For example, the processing component 802 may include a multimedia module to facilitate the interaction between the multimedia component 808 and the processing component 802.

[0273] The memory 804 is configured to store various types of data to support operations on the device 800. Examples of such data include instructions for any application or method operating on the device 800, contact data, phone book data, messages, pictures, videos, etc. The memory 804 can be implemented by any type of volatile or non-volatile storage device or a combination thereof, such as static random access memory (SRAM), electrically erasable programmable read-only memory (EEPROM), erasable programmable read-only memory (EPROM), programmable read-only memory (PROM), read-only memory (ROM), magnetic memory, flash memory, magnetic disk or optical disk.

[0274] The power supply component 806 provides power to the various components of the device 800. The power supply component 806 can include a power management system, one or more power supplies, and other components associated with generating, managing, and distributing power for the device 800.

[0275] The multimedia component 808 includes a screen that provides an output interface between the device 800 and the user. In some embodiments, the screen may include a liquid crystal display (LCD) and a touch panel (TP). If the screen includes a touch panel, the screen may be implemented as a touch screen to receive input signals from the user. The touch panel includes one or more touch sensors to sense touch, slide, and gestures on the touch panel. The touch sensor may not only sense the boundaries of the touch or slide action, but also detect the duration and pressure associated with the touch or slide operation. In some embodiments, the multimedia component 808 includes a front camera and / or a rear camera. When the device 800 is in an operating mode, such as a shooting mode or a video mode, the front camera and / or the rear camera may receive external multimedia data. Each front camera and rear camera may be a fixed optical lens system or have a focal length and optical zoom capability.

[0276] The audio component 810 is configured to output and / or input audio signals. For example, the audio component 810 includes a microphone (MIC), and when the device 800 is in an operating mode, such as a call mode, a recording mode, and a speech recognition mode, the microphone is configured to receive an external audio signal. The received audio signal can be further stored in the memory 804 or sent via the communication component 816. In some embodiments, the audio component 810 also includes a speaker for outputting audio signals.

[0277] I / O interface 812 provides an interface between processing component 802 and peripheral interface modules, such as keyboards, click wheels, buttons, etc. These buttons may include but are not limited to: home button, volume button, start button, and lock button.

[0278] The sensor assembly 814 includes one or more sensors for providing various aspects of status assessment for the device 800. For example, the sensor assembly 814 can detect the open / closed state of the device 800, the relative positioning of components, such as the display and keypad of the device 800, and the sensor assembly 814 can also detect the position change of the device 800 or a component of the device 800, the presence or absence of user contact with the device 800, the orientation or acceleration / deceleration of the device 800, and the temperature change of the device 800. The sensor assembly 814 may include a proximity sensor configured to detect the presence of nearby objects without any physical contact. The sensor assembly 814 may also include a light sensor, such as a CMOS or CCD image sensor, for use in imaging applications. In some embodiments, the sensor assembly 814 may also include an acceleration sensor, a gyroscope sensor, a magnetic sensor, a pressure sensor, or a temperature sensor.

[0279] The communication component 816 is configured to facilitate wired or wireless communication between the device 800 and other devices. The device 800 can access a wireless network based on a communication standard, such as Wi-Fi, 4G or 5G, or a combination thereof. In an exemplary embodiment, the communication component 816 receives a broadcast signal or broadcast-related information from an external broadcast management system via a broadcast channel. In an exemplary embodiment, the communication component 816 also includes a near field communication (NFC) module to facilitate short-range communication. For example, the NFC module can be implemented based on radio frequency identification (RFID) technology, infrared data association (IrDA) technology, ultra-wideband (UWB) technology, Bluetooth (BT) technology and other technologies.

[0280] In an exemplary embodiment, the device 800 may be implemented by one or more application-specific integrated circuits (ASICs), digital signal processors (DSPs), digital signal processing devices (DSPDs), programmable logic devices (PLDs), field programmable gate arrays (FPGAs), controllers, microcontrollers, microprocessors, or other electronic components to perform the above methods.

[0281] In an exemplary embodiment, a non-transitory computer-readable storage medium including instructions is also provided, such as a memory 804 including instructions, which can be executed by a processor 820 of the device 800 to perform the above method. For example, the non-transitory computer-readable storage medium can be a ROM, a random access memory (RAM), a CD-ROM, a magnetic tape, a floppy disk, an optical data storage device, etc.

[0282] A non-transitory computer-readable storage medium, when instructions in the storage medium are executed by a processor of a simulation device, enables the simulation device to perform a simulation method, the method comprising:

[0283] Obtaining a sample circuit board; the sample circuit board has a transmission line to be tested;

[0284] Obtaining scattering parameters of the transmission line to be tested in the sample circuit board;

[0285] Fitting is performed based on the scattering parameters and material parameters of the sample circuit board before preparation to obtain a target simulation model;

[0286] The material parameters of the target circuit board before being manufactured are input into the target simulation model to obtain equivalent parameters of the material parameters after the target circuit board is manufactured.

[0287] Fig.18 1 is a hardware structure block diagram of an electronic device according to an exemplary embodiment. For example, device 1900 may be provided as a server. Fig.18 , the device 1900 includes a processing component 1922, which further includes one or more processors, and a memory resource represented by a memory 1932 for storing instructions executable by the processing component 1922, such as an application. The application stored in the memory 1932 may include one or more modules each corresponding to a set of instructions. In addition, the processing component 1922 is configured to execute instructions to perform a simulation method, including:

[0288] Obtaining a sample circuit board; the sample circuit board has a transmission line to be tested;

[0289] Obtaining scattering parameters of the transmission line to be tested in the sample circuit board;

[0290] Fitting is performed based on the scattering parameters and material parameters of the sample circuit board before preparation to obtain a target simulation model;

[0291] The material parameters of the target circuit board before being manufactured are input into the target simulation model to obtain equivalent parameters of the material parameters after the target circuit board is manufactured.

[0292] The device 1900 may also include a power component 1926 configured to perform power management of the device 1900, a wired or wireless network interface 1950 configured to connect the device 1900 to a network, and an input / output (I / O) interface 1958. The device 1900 may operate based on an operating system stored in the memory 1932, such as Windows Server™, MacOS X™, Unix™, Linux™, FreeBSD™, or the like.

[0293] It should be understood that "one embodiment" or "an embodiment" mentioned throughout the specification means that specific features, structures or characteristics related to the embodiment are included in at least one embodiment of the present disclosure. Therefore, "in one embodiment" or "in an embodiment" appearing throughout the specification does not necessarily refer to the same embodiment. In addition, these specific features, structures or characteristics can be combined in one or more embodiments in any suitable manner. It should be understood that in the various embodiments of the present disclosure, the size of the serial number of the above-mentioned processes does not mean the order of execution. The execution order of each process should be determined by its function and internal logic, and should not constitute any limitation on the implementation process of the embodiments of the present disclosure. The serial numbers of the embodiments of the present disclosure are for description only and do not represent the advantages and disadvantages of the embodiments.

[0294] It should be noted that, in this article, the terms "include", "comprises" or any other variations thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, an element defined by the sentence "comprises a ..." does not exclude the existence of other identical elements in the process, method, article or device including the element.

[0295] In the several embodiments provided in the present disclosure, it should be understood that the disclosed devices and methods can be implemented in other ways. The device embodiments described above are only schematic. For example, the division of the units is only a logical function division. There may be other division methods in actual implementation, such as: multiple units or components can be combined, or can be integrated into another system, or some features can be ignored, or not executed. In addition, the coupling, direct coupling, or communication connection between the components shown or discussed can be through some interfaces, and the indirect coupling or communication connection of the devices or units can be electrical, mechanical or other forms.

[0296] The units described above as separate components may or may not be physically separated, and the components displayed as units may or may not be physical units; they may be located in one place or distributed on multiple network units; some or all of the units may be selected according to actual needs to achieve the purpose of the present embodiment.

[0297] In addition, all functional units in the embodiments of the present disclosure may be integrated into one processing unit, or each unit may be separately configured as a unit, or two or more units may be integrated into one unit; the above-mentioned integrated units may be implemented in the form of hardware or in the form of hardware plus software functional units.

[0298] Those skilled in the art will readily appreciate other embodiments of the present disclosure after considering the specification and practicing the invention disclosed herein. The present disclosure is intended to cover any variations, uses or adaptations of the present disclosure that follow the general principles of the present disclosure and include common knowledge or customary techniques in the art that are not disclosed in the present disclosure. The description and examples are to be considered exemplary only, and the true scope and spirit of the present disclosure are indicated by the following claims.

[0299] It should be understood that the present disclosure is not limited to the exact structures that have been described above and shown in the drawings, and that various modifications and changes may be made without departing from the scope thereof. The scope of the present disclosure is limited only by the appended claims.

Claims

1. A simulation method, characterized in that: The method comprises: Obtaining a sample circuit board; the sample circuit board has a transmission line to be tested; Obtaining scattering parameters of the transmission line to be tested in the sample circuit board; Fitting is performed based on the scattering parameters of the transmission line to be tested and the material parameters of the sample circuit board before preparation to obtain a target simulation model; The material parameters of the target circuit board before being manufactured are input into the target simulation model to obtain equivalent parameters of the material parameters after the target circuit board is manufactured.

2. The method according to claim 1, characterized in that The material parameters of the sample circuit board before preparation include at least one of the following: dielectric constant, relative dielectric constant, loss factor, conductivity, relative magnetic permeability, copper skin roughness, etching angle and skin depth.

3. The method according to claim 1, characterized in that The transmission line to be tested includes a first transmission line and a second transmission line; The first transmission line includes a first de-embedding reference line; the second transmission line includes a second de-embedding reference line and a first test line; The first de-embedding reference line and the second de-embedding reference line have the same length and width.

4. The method according to claim 3, characterized in that The transmission line to be tested further includes a third transmission line; The third transmission line includes a third de-embedding reference line and a second test line; The first de-embedding reference line, the second de-embedding reference line and the third de-embedding reference line have the same length and width; the first test line and the second test line have different widths.

5. The method according to claim 3, characterized in that: The step of obtaining the scattering parameters of the transmission line to be tested in the sample circuit board includes: Acquire scattering parameters of the first transmission line and the second transmission line; The scattering parameters of the first test line in the second transmission line are obtained by de-embedding.

6. The method according to claim 3, characterized in that The method further comprises: acquiring insertion loss, return loss and phase of the first test line according to the scattering parameter of the first test line; The scattering parameters of the first test line are verified in the frequency domain based on the insertion loss, return loss and phase of the first test line.

7. The method according to claim 3, characterized in that The method further comprises: The test impedance of the first test line is obtained by measuring with a time domain reflectometer; acquiring a transmission line impedance of the first test line according to a scattering parameter of the first test line; A scattering parameter of the first test line is verified in the time domain based on the test impedance and the transmission line impedance.

8. The method according to claim 1, characterized in that Fitting is performed based on the scattering parameters of the transmission line to be tested and the material parameters of the sample circuit board before preparation to obtain a target simulation model, including: Constructing a simulation model based on material parameters of the sample circuit board before preparation; Performing transmission line delay fitting based on the simulated delay and simulated phase output by the simulation model and the scattering parameters of the transmission line to be tested, and training the equivalent dielectric constant in the simulation model; Perform insertion loss fitting and return loss fitting in a high frequency band based on the simulated insertion loss and simulated return loss output by the simulation model and the scattering parameters of the transmission line to be tested, and train the equivalent loss factor and equivalent copper roughness in the simulation model; Fitting the insertion loss in the low frequency band based on the simulated insertion loss in the low frequency band output by the simulation model and the scattering parameters of the transmission line to be tested, and training the equivalent conductivity in the simulation model; The simulation model is updated based on the equivalent parameters obtained through training to obtain a target simulation model.

9. The method according to claim 8, characterized in that The method further comprises: Slicing the sample circuit board to obtain sample circuit board slices; Acquiring slice data of the sample circuit board slice; A simulation model is constructed based on the slicing data and material parameters of the sample circuit board before preparation.

10. The method according to claim 9, characterized in that The slice data includes at least one of the following: line width, etching angle and circuit board thickness.

11. The method according to claim 9, characterized in that Before constructing the simulation model based on the slice data and the material parameters of the sample circuit board before preparation, the method further includes: Perform transmission line impedance fitting based on the material parameters of the sample circuit board before preparation and the scattering parameters, and adjust the slice data; Before constructing the simulation model based on the slice data and the material parameters of the sample circuit board before preparation, the method includes: A simulation model is constructed based on the adjusted slicing data and material parameters of the sample circuit board before preparation.

12. A simulation device, characterized in that: include: An acquisition module configured to acquire a sample circuit board; The sample circuit board has a transmission line to be tested; A testing module configured to obtain scattering parameters of the transmission line to be tested in the sample circuit board; A determination module configured to perform fitting based on the scattering parameters and material parameters of the sample circuit board before preparation to obtain a target simulation model; The simulation module is configured to input material parameters of the target circuit board before preparation into the target simulation model to obtain equivalent parameters of the material parameters after the target circuit board is prepared.

13. A simulation device, characterized in that: include: processor; a memory for storing processor-executable instructions; The processor is configured to implement the steps of any one of the simulation methods in claims 1 to 11 when executed.

14. A non-transitory computer-readable storage medium, when the instructions in the storage medium are executed by a processor of a simulation device, the device is enabled to perform the steps in any one of the simulation methods of claims 1 to 11.

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