Field-circuit collaborative simulation method for radiation emission of electronic product

Abstract

The invention discloses a field-circuit co-simulation method for radiation emission of an electronic product. The simulation method comprises the following steps: importing a PCB diagram; and designing the PCB diagram by using cartographic software according to a schematic diagram of an electronic product. And step S2, SIwave parameter extraction: carrying out SYZ parameter extraction on the key device of the PCB diagram. And step S3, Designer field-circuit co-simulation: carrying out simulation on the board-level far / near field radiation characteristics of the electronic product so as to determine the board-level radiation emission characteristics of the circuit board. And S4, performing HFSS field-to-field link simulation, and performing simulation on the radiation characteristics of the electronic product so as to complete product-level radiation emission simulation analysis. The method has the advantages that the simulation method is easy to achieve, the noise source deviation degree is low, the simulation result confidence degree is high, evaluation of the electromagnetic compatibility radiation emission level of the product is rapidly achieved, and a reliable theoretical basis is provided for optimization of product design and fault positioning.

Description

Technical Field

[0001] The invention relates to field-circuit co-simulation, and in particular to a field-circuit co-simulation method for radiation emission of electronic products. Background Art

[0002] The radiation emission characteristics of electronic products are the key considerations in the product development process. The noise mainly comes from key components on the PCB board, such as power supply, crystal oscillator, high-speed communication, etc. Simulation and evaluation can predict the radiation emission risk of products in the solution stage in advance, reduce R&D costs, and shorten the R&D cycle. The existing simulation methods are relatively complex to implement, and the noise source cannot simulate the actual working state of the product, and cannot effectively solve the problem of excessive radiation emission. Summary of the invention

[0003] The purpose of the present invention is to solve the problems in the prior art and provide a novel field-circuit co-simulation method for radiation emission of electronic products. The present invention solves the problems of complex implementation of the existing method, high deviation of the noise source, and low confidence of the simulation results. The present invention relates to a method for co-simulating radiation emission, including importing PCB, SIwave parameter extraction, Designer field-circuit co-simulation and HFSS field-to-field link simulation, characterized in that: In order to achieve the above-mentioned purpose, the present invention provides a technical solution: a field-circuit collaborative simulation method for radiation emission of electronic products, comprising: Step S1, importing PCB board diagram: using drawing software to design PCB board diagram according to the electronic product schematic diagram; Step S2, SIwave parameter extraction, performing SYZ parameter extraction on the key components of the PCB board diagram; Step S3, Designer field-circuit collaborative simulation, simulating the far / near field radiation characteristics of the electronic product board level to determine the radiation emission characteristics of the circuit board level; and Step S4, HFSS field-to-field link simulation, simulating the radiation characteristics of the electronic product to complete product-level radiation emission simulation analysis.

[0004] As a preferred solution for the field-circuit collaborative simulation method of radiation emission of electronic products, in step S2, the imported PCB board diagram is subjected to design review, network port and pin creation, RLC model matching, and SYZ parameter extraction setting.

[0005] As a preferred solution for the field-circuit collaborative simulation method of radiated emissions of electronic products, in step S2, the design review includes: self-intersecting, DC short-circuit networks, and separation networks; network port and pin creation includes: ports and pins of key components generating power and signal networks; RLC model matching includes: using the automatic matching function to quickly assign the RLC model; SYZ parameter extraction settings include: solution frequency band, frequency sweep mode, and solution accuracy.

[0006] As a preferred solution for the field-circuit collaborative simulation method of radiation emission of electronic products, in step S3, the IBIS model of key components is imported and its working network is built, transient simulation analysis is performed, noise spectrum is generated, and far / near field radiation characteristics are analyzed.

[0007] As a preferred solution for the field-circuit collaborative simulation method of radiation emission of electronic products, in step S3, importing the IBIS model of the key device and building its working network includes: selecting the IBIS model of the key device in the component library to import, setting the parameters of the IBIS model at the same time, and then providing sources for the power supply, communication, and feedback pins of the IBIS model; transient simulation analysis includes: setting the solution time domain and solution accuracy; generating a noise spectrum includes: obtaining the noise spectrum by Fourier transforming the time domain results obtained by the transient simulation analysis; far / near radiation characteristic analysis includes: importing the noise spectrum as an excitation source into the port of the key device and then performing far / near field simulation analysis.

[0008] As a preferred solution of the field-circuit collaborative simulation method for radiation emission of electronic products, in step S4, field link engineering, solution design, and radiation emission analysis are performed on the near-field simulation.

[0009] As a preferred solution for the field-circuit collaborative simulation method of radiation emission of electronic products, in step S4, the field linking project includes: linking the field file output by SIwave and linking the field settings; the solution design includes: frequency sweeping method, solution frequency point and solution accuracy; the radiation emission analysis includes: importing the three-dimensional model of the electronic product, solving the radiation level based on the link field and completing the radiation emission simulation analysis of the electronic product.

[0010] Compared with the prior art, the beneficial effects of the present invention are at least that: the simulation method is simple to implement, the noise source deviation is low, the simulation result confidence is high, and the evaluation of the product electromagnetic compatibility radiation emission level can be quickly realized, providing a reliable theoretical basis for optimizing product design and fault location. BRIEF DESCRIPTION OF THE DRAWINGS

[0011] Figure 1 The figure is a flow chart of the method of the present invention. Implementation

[0012] The present invention is further described in detail below by means of specific embodiments in combination with the accompanying drawings. It should be noted that the description of these embodiments is used to help understand the present invention, but does not constitute a limitation of the present invention. In addition, the technical features involved in each embodiment of the present invention described below can be combined with each other as long as they do not conflict with each other.

[0013] See also Figure 1 , the figure shows a field-circuit collaborative simulation method for radiation emission of electronic products. The simulation method includes: Step S1, importing the PCB board diagram: using Altium Designer software to draw the PCB board diagram according to the schematic diagram of the electronic product, generating an ODB++ file, and then importing it into SIwave software.

[0014] Step S2, SIwave parameter extraction: Use SIwave software to extract SYZ parameters of key components of PCB board diagram. Perform design review, network port and pin creation, RLC model matching, and SYZ parameter extraction settings on the imported PCB board diagram. Among them, the design review includes: self-intersection, DC short-circuit network, separation network and other reviews. Among them, network ports and pins are created to generate ports and pins for power and signal networks for key components. Among them, RLC model matching uses the automatic matching function to quickly assign RLC models. Among them, SYZ parameter extraction is to set the solution frequency band, frequency sweep mode and solution accuracy.

[0015] Step S3, Designer field-circuit collaborative simulation: simulate the far / near field radiation characteristics of the electronic product board level to determine the radiation emission characteristics of the circuit board level. Specifically, it includes: importing the IBIS model of key components and building their working network, transient simulation analysis, generating noise spectrum, and far / near field radiation characteristics analysis.

[0016] Among them, import the IBIS model of the key device and build its working network. Select the IBIS model of the key device in the component library to import, set the parameters of the IBIS model, and then provide sources for the power supply, communication, feedback and other pins of the IBIS model.

[0017] Among them, transient simulation analysis is to set the solution time domain and solution accuracy.

[0018] The generating of the noise spectrum is to obtain the noise spectrum by Fourier transforming the time domain result obtained by the transient simulation analysis.

[0019] Among them, the far / near radiation characteristics analysis is to import the noise spectrum as the excitation source into the port of the key device and then perform far / near field simulation analysis.

[0020] Step S4, HFSS field-to-field link simulation, simulates the radiation characteristics of electronic products to complete product-level radiation emission simulation analysis: field link engineering, solution design, and radiation emission analysis are performed on near-field simulation.

[0021] The field linking project is to link the field files output by SIwave and link the field settings.

[0022] Among them, the solution design includes frequency sweep mode, solution frequency point and solution accuracy.

[0023] Among them, the radiation emission analysis is to import the three-dimensional model of the electronic product, solve the radiation level based on the link field, and complete the radiation emission simulation analysis of the electronic product.

[0024] The above only expresses the implementation mode of the present invention, and its description is relatively specific and detailed, but it cannot be understood as limiting the scope of the invention patent. It should be pointed out that for ordinary technicians in this field, several modifications and improvements can be made without departing from the concept of the present invention, which all belong to the protection scope of the present invention. Therefore, the protection scope of the patent of the present invention shall be based on the attached claims.

Claims

1. A field-circuit collaborative simulation method for radiation emission of electronic products, characterized in that: include: Step S1, importing PCB board diagram: using drawing software to design PCB board diagram according to the electronic product schematic diagram; Step S2, SIwave parameter extraction, performing SYZ parameter extraction on the key components of the PCB board diagram; Step S3, Designer field-circuit collaborative simulation, simulating the far / near field radiation characteristics of the electronic product board level to determine the radiation emission characteristics of the circuit board level; as well as, Step S4, HFSS field-to-field link simulation, simulating the radiation characteristics of the electronic product to complete product-level radiation emission simulation analysis.

2. The field-circuit collaborative simulation method for radiation emission of electronic products according to claim 1, characterized in that: In step S2, the imported PCB board diagram is subjected to design review, network port and pin creation, RLC model matching, and SYZ parameter extraction setting.

3. The field-circuit collaborative simulation method for radiation emission of electronic products according to claim 2, characterized in that: In step S2, the design review includes: self-intersecting, DC short-circuit networks, and separation networks; network port and pin creation includes: ports and pins of key components generating power and signal networks; RLC model matching includes: using the automatic matching function to quickly assign RLC models; SYZ parameter extraction settings include: solution frequency band, frequency sweep mode, and solution accuracy.

4. The field-circuit collaborative simulation method for radiation emission of electronic products according to claim 1, characterized in that: In step S3, the IBIS model of the key device is imported and its working network is built, transient simulation analysis is performed, noise spectrum is generated, and far / near field radiation characteristics are analyzed.

5. The field-circuit collaborative simulation method for radiation emission of electronic products according to claim 4, characterized in that: In step S3, importing the IBIS model of the key device and building its working network includes: selecting the IBIS model of the key device in the component library to import, setting the parameters of the IBIS model, and then providing sources for the power supply, communication, and feedback pins of the IBIS model; transient simulation analysis includes: setting the solution time domain and solution accuracy; generating a noise spectrum includes: obtaining the noise spectrum by Fourier transforming the time domain results obtained by the transient simulation analysis; far / near radiation characteristic analysis includes: importing the noise spectrum as an excitation source into the port of the key device and then performing far / near field simulation analysis.

6. The field-circuit collaborative simulation method for radiation emission of electronic products according to claim 1, characterized in that: In step S4, field link engineering, solution design, and radiation emission analysis are performed on the near-field simulation.

7. The field-circuit collaborative simulation method for radiation emission of electronic products according to claim 6, characterized in that: In step S4, the field linking project includes: linking the field file output by SIwave and linking the field settings; the solution design includes: frequency sweeping method, solution frequency point and solution accuracy; the radiation emission analysis includes: importing the three-dimensional model of the electronic product, solving the radiation level based on the link field and completing the radiation emission simulation analysis of the electronic product.

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