Oxide film re-repairing method and reaction system

Abstract

The invention provides an oxide film re-repairing method and a reaction system. The method for re-repairing the oxide thin film comprises the following steps: introducing a starting gas into a reaction system to carry out glow discharge to form an initial plasma environment; introducing water vapor in a pulse mode in the initial plasma environment, and re-oxidizing the surface of the oxide thin film in the reaction system after the water vapor is excited into plasma; stopping glow discharge, and exhausting residual gas in the reaction system; performing a reduction process on the natural oxide and the metal oxide on the surface of the substrate; and repeatedly executing all the steps until the number of the particles in the reaction system reaches a preset target.

Description

Technical Field

[0001] The invention relates to the field of semiconductor manufacturing, and in particular to a method for repairing an oxide film. Background Art

[0002] In the field of semiconductor manufacturing, in the process of removing natural oxides and metal oxides from the wafer surface (such as using hydrogen to remove copper oxide from the wafer surface), the oxide film in the reaction system is easily corroded by active groups and falls off. This phenomenon occurs frequently, leading to particle contamination problems.

[0003] To solve this technical problem, the industry currently generally adopts the method of selecting low hydrogen recombination rate materials (such as quartz) inside the reaction system. However, these materials are expensive and fragile, which greatly limits their widespread application in the industrial field. In addition, the industry currently also adopts a method of introducing an oxygen source for re-repair, but in actual operation, accurately controlling the degree of re-oxidation is a major challenge, and the existing technology is prone to induce over-oxidation, thereby weakening the efficiency of the subsequent reduction process. Summary of the invention

[0004] In order to overcome the defects of the prior art, the present invention proposes a method for repairing oxide films based on pulse injection glow discharge. This method can not only effectively solve the particle contamination problem caused by the shedding of oxide films, but also accurately control the injection amount of the oxygen source to avoid the occurrence of over-oxidation, thereby significantly improving the efficiency of the subsequent reduction process.

[0005] The present invention provides a method for repairing an oxide film, including but not limited to the following steps:

[0006] Introducing a starter gas into the reaction system to perform glow discharge and form an initial plasma environment;

[0007] In the initial plasma environment, water vapor is pulsed, the water vapor is excited into plasma and repairs the surface of the oxide film in the reaction system;

[0008] stopping the glow discharge and evacuating the residual gas in the reaction system;

[0009] Performing a reduction process on the natural oxide and metal oxide on the surface of the substrate;

[0010] All the above steps are repeated and executed in a cycle until the number of particles in the reaction system reaches a preset target.

[0011] In one embodiment, the substrate is first transferred into the reaction system before the ignition gas is introduced for glow discharge.

[0012] In one embodiment, the water vapor is excited into plasma and the surface of the oxide film in the reaction system is repaired again, comprising:

[0013] The water vapor is ionized and excited by utilizing the high-energy discharge characteristics of the initial plasma environment to decompose oxygen ions, oxygen atoms and hydroxyl radicals with strong oxidizing properties;

[0014] reoxidizing the surface of the oxide film;

[0015] A protective layer is formed on the surface of the oxide thin film.

[0016] In one embodiment, the reduction process of the natural oxide and the metal oxide on the surface of the substrate includes using hydrogen active groups to perform a reduction reaction on the natural oxide and the metal oxide.

[0017] In one embodiment, the reaction system includes a remote plasma source and a reaction chamber connected to the remote plasma source.

[0018] In one embodiment, introducing a starter gas into a reaction system to perform glow discharge to form an initial plasma environment includes:

[0019] Turning on the remote plasma source and using the ignition gas as a precursor gas to perform ignition discharge;

[0020] Controlling the gas flow rate of the ignition gas within the range of 2000-5000 sccm;

[0021] Maintaining the pressure in the reaction system at less than 500 mtorr;

[0022] The glow discharge time was maintained at more than 2 s.

[0023] In one embodiment, the pulsed introduction of water vapor comprises:

[0024] The gas flow rate of the water vapor pulsed in once is controlled within 20-100 sccm;

[0025] The time for a pulse of water vapor is maintained within the range of 3-20s.

[0026] In one embodiment, stopping the glow discharge and evacuating the residual gas in the reaction system comprises:

[0027] Turn off the remote plasma source;

[0028] The pressure in the reaction system is controlled to be less than 500 mtorr;

[0029] Control the pumping time to more than 5s.

[0030] In one embodiment, the ignition gas comprises an inert gas.

[0031] In one embodiment, the ignition gas includes argon and / or helium.

[0032] The present invention also provides a reaction system, comprising:

[0033] Remote plasma source;

[0034] a reaction chamber connected to the remote plasma source;

[0035] The control system for controlling the remote plasma source and the reaction chamber includes a memory and a processor. The memory stores computer instructions that can be run on the processor. When the processor runs the computer instructions, the oxide film repair method as described above is executed.

[0036] The oxide film repair method and reaction system of the present invention have the following beneficial effects:

[0037] First, precise water vapor pulse injection glow discharge technology. After the starter gas discharge is stable, the present invention accurately injects trace amounts of water vapor in a pulsed manner to repair the oxide film inside the reaction system. This pulse injection technology not only achieves precise control of the amount of water vapor, but also avoids the impact of residual water vapor on subsequent reduction steps, thereby improving the reliability and stability of the overall process.

[0038] Second, it effectively inhibits over-oxidation. The present invention successfully repairs the oxide film while avoiding over-oxidation on the surface of the processed sample (substrate) by injecting a small amount of water vapor in a pulsed manner. This not only protects the integrity of the oxide film, but also improves the efficiency of the subsequent reduction step.

[0039] Thirdly, the present invention first introduces pure inert gas as the ignition gas, which significantly reduces the difficulty of plasma source glow discharge and overcomes the technical obstacle of gas mixing uniformity. BRIEF DESCRIPTION OF THE DRAWINGS

[0040] The above invention content and the following specific embodiments of the present invention will be better understood when read in conjunction with the accompanying drawings. It should be noted that the accompanying drawings are only examples of the claimed invention. In the accompanying drawings, the same reference numerals represent the same or similar elements.

[0041] Figure 1 A flow chart showing a method for repairing an oxide film according to an embodiment of the present invention is shown;

[0042] Figure 2The pulse injection glow discharge reoxidation result according to one embodiment of the present invention is shown;

[0043] Figure 3 A graph showing the relationship between the number of reoxidation cycles and the number of particles according to an embodiment of the present invention is shown. DETAILED DESCRIPTION

[0044] The detailed features and advantages of the present invention are described in detail in the specific embodiments below, and the content is sufficient to enable any person skilled in the art to understand the technical content of the present invention and implement it accordingly, and according to the description, claims and drawings disclosed in this specification, those skilled in the art can easily understand the relevant purposes and advantages of the present invention. Although the description of the present invention will be introduced in conjunction with the preferred embodiment, this does not mean that the features of this invention are limited to this embodiment. On the contrary, the purpose of introducing the invention in conjunction with the embodiment is to cover other options or modifications that may be extended based on the claims of the present invention. In order to provide a deep understanding of the present invention, many specific details will be included in the following description. The present invention can also be implemented without using these details. In addition, in order to avoid confusion or blurring the focus of the present invention, some specific details will be omitted in the description.

[0045] In the description of the present invention, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0046] In addition, the terms "upper", "lower", "left", "right", "top", "bottom", "horizontal" and "vertical" used in the following description should be understood as the directions shown in the paragraph and the related drawings. Such relative terms are only used for the convenience of description and do not mean that the device described therein must be manufactured or operated in a specific direction, and therefore should not be understood as limiting the present invention.

[0047] It is understood that although the terms "first", "second", "third", etc. may be used herein to describe various components, channels, components, regions, layers and / or parts, these components, channels, components, regions, layers and / or parts should not be limited by these terms, and these terms are only used to distinguish different components, channels, components, regions, layers and / or parts. In addition, the terms "first", "second", "third" are used for descriptive purposes only and cannot be understood as indicating or implying relative importance.

[0048] As shown in this application and claims, unless the context clearly indicates an exception, the words "a", "an", "an" and / or "the" do not refer to the singular and may also include the plural. Generally speaking, the terms "include" and "comprise" only indicate the inclusion of the steps and elements that have been clearly identified, and these steps and elements do not constitute an exclusive list. The method or device may also include other steps or elements.

[0049] In some embodiments, numbers describing the number of components and attributes are used. It should be understood that such numbers used in the description of the embodiments are modified by the modifiers "about", "approximately" or "substantially" in some examples. Unless otherwise specified, "about", "approximately" or "substantially" indicate that the numbers are allowed to vary by ±20%. Accordingly, in some embodiments, the numerical parameters used in the specification and claims are approximate values, which may change according to the required features of individual embodiments. In some embodiments, the numerical parameters should take into account the specified significant digits and adopt the general method of retaining digits. Although the numerical domains and parameters used to confirm the breadth of their range in some embodiments of the present application are approximate values, in specific embodiments, the setting of such numerical values ​​is as accurate as possible within the feasible range.

[0050] At the same time, the present application uses specific words to describe the embodiments of the present application. For example, "one embodiment", "an embodiment", and / or "some embodiments" refer to a certain feature, structure or characteristic related to at least one embodiment of the present application. Therefore, it should be emphasized and noted that "one embodiment" or "an embodiment" or "an alternative embodiment" mentioned twice or more in different positions in this specification does not necessarily refer to the same embodiment. In addition, some features, structures or characteristics in one or more embodiments of the present application can be appropriately combined.

[0051] In the field of semiconductor manufacturing, in the process of removing natural oxides and metal oxides from the wafer surface (such as using hydrogen to remove copper oxide from the wafer surface), the oxide film in the reaction system is easily corroded by active groups and falls off. This phenomenon occurs frequently, leading to particle contamination problems.

[0052] The present invention proposes an efficient and low-cost repair and protection strategy to address the low efficiency of oxide film repair. Through scientific design and precise control, a stable protective layer is constructed on the coating surface. This protective layer can not only effectively resist the erosion of active groups and reduce particulate pollution, but also effectively prevent potential obstacles to subsequent reduction processes caused by excessive oxidation. The oxide film repair method of the present invention greatly improves the repair efficiency and helps optimize and upgrade semiconductor manufacturing processes.

[0053] Figure 1A flow chart of a method for repairing an oxide film according to an embodiment of the present invention is shown. The method includes but is not limited to the following steps.

[0054] Step 101: Transfer the substrate to the interior of the reaction system.

[0055] In one embodiment, a reaction system includes a remote plasma source and a reaction chamber connected to the remote plasma source.

[0056] Step 102: introducing a starter gas to perform glow discharge to form a uniform and stable initial plasma environment.

[0057] Water vapor cannot be directly converted into a plasma state through ignition discharge. It needs to use an inert gas (such as argon and helium) as a pioneer gas to first perform ignition discharge, thereby playing a role of initiation and assistance. In the initial stage of discharge, the inert gas is excited under the action of the electric field to form an initial plasma environment. This environment provides the necessary conditions for the subsequent ionization and excitation of water vapor, allowing water molecules to further dissociate and ionize in the plasma atmosphere formed by the inert gas, and finally convert into a plasma state.

[0058] In one embodiment, the ignition gas is an inert gas, including but not limited to argon, helium, etc.

[0059] In one embodiment, the gas flow rate of the ignition gas is 2000-5000 sccm.

[0060] In one embodiment, the pressure within the reaction system is maintained at less than 500 mtorr.

[0061] In one embodiment, the discharge time of the pure starting gas is greater than 2 seconds.

[0062] Step 103: A small amount of water vapor is introduced in a pulsed manner, and the water vapor is excited into plasma and repairs the surface of the oxide film in the reaction system.

[0063] Water vapor can be ionized and excited in a high-energy discharge environment, decomposing into oxygen ions (O 2 -, O-), oxygen atoms (O) and hydroxyl radicals (OH·). By utilizing the oxidizing property of water vapor after ionization and excitation, the surface of the oxide film in the reaction chamber and the chamber of the remote plasma source can be reoxidized and a protective layer can be formed, thereby realizing the re-repair of the surface of the oxide film and solving the problem that the oxide film is eroded and reduced by active groups, resulting in changes in the surface structure of the coating and even partial peeling, thereby forming tiny particles.

[0064] However, in order to ensure that the oxide film can undergo the reoxidation process uniformly and fully while avoiding the residual water vapor, the present invention strictly controls the injection amount and duration of water vapor in the form of pulses.

[0065] In one embodiment, the gas flow rate of water vapor is 20-100 sccm; and the holding time may be in the range of 3-20 s.

[0066] In one embodiment, a pulse of water vapor is a reoxidation process.

[0067] Step 104: Stop the glow discharge.

[0068] In one embodiment, the glow discharge is stopped by shutting down the remote plasma source.

[0069] Step 105: exhaust the residual gas in the reaction system.

[0070] In one embodiment, the pumping time is greater than 5 s.

[0071] In one embodiment, the chamber pressure is controlled to be less than 500 mtorr.

[0072] Step 106: Perform a reduction process.

[0073] In one embodiment, the reduction process refers to a reduction process for the natural oxide and the metal oxide on the surface of the substrate, including using hydrogen active groups to perform a reduction reaction on the natural oxide and the metal oxide.

[0074] In one embodiment, after the reduction process continues for a preset period of time, steps 102-106 are repeated to perform the next re-repair (ie, re-oxidation) and reduction process, and the cycle is repeated until the number of particles in the reaction system reaches a preset target.

[0075] The reoxidation process and the reduction process of the present invention are carried out in an alternating cycle, and the amount of water vapor introduced during reoxidation can be precisely controlled, which can effectively inhibit the over-oxidation phenomenon.

[0076] Figure 2 FIG. 4 shows the pulse injection glow discharge reoxidation result according to an embodiment of the present invention.

[0077] like Figure 2 As shown, the number of particles before reoxidation was 840 ea. The number of particles after 53 cycles of reoxidation was 7 ea.

[0078] Figure 3 A graph showing the relationship between the number of reoxidation cycles and the number of particles according to an embodiment of the present invention is shown.

[0079] After 20 reoxidation cycles, the particle number met the requirement, and after 188 cycles, the particle problem was still well addressed, indicating that the reoxidation method effectively restored the oxide film and suppressed particle contamination.

[0080] The present invention provides a method for repairing an oxide film, including but not limited to the following steps:

[0081] Introducing a starter gas into the reaction system to perform glow discharge and form an initial plasma environment;

[0082] In the initial plasma environment, water vapor is pulsed, the water vapor is excited into plasma and repairs the surface of the oxide film in the reaction system;

[0083] stopping the glow discharge and evacuating the residual gas in the reaction system;

[0084] Performing a reduction process on the natural oxide and metal oxide on the surface of the substrate;

[0085] All the above steps are repeated and executed in a cycle until the number of particles in the reaction system reaches a preset target.

[0086] In one embodiment, the substrate is first transferred into the reaction system before the ignition gas is introduced for glow discharge.

[0087] In one embodiment, the water vapor is excited into plasma and the surface of the oxide film in the reaction system is repaired again, comprising:

[0088] The water vapor is ionized and excited by utilizing the high-energy discharge characteristics of the initial plasma environment to decompose oxygen ions, oxygen atoms and hydroxyl radicals with strong oxidizing properties;

[0089] reoxidizing the surface of the oxide film;

[0090] A protective layer is formed on the surface of the oxide thin film.

[0091] In one embodiment, the reduction process of the natural oxide and the metal oxide on the surface of the substrate includes using hydrogen active groups to perform a reduction reaction on the natural oxide and the metal oxide.

[0092] In one embodiment, the reaction system includes a remote plasma source and a reaction chamber connected to the remote plasma source.

[0093] In one embodiment, introducing a starter gas into a reaction system to perform glow discharge to form an initial plasma environment includes:

[0094] Turning on the remote plasma source and using the ignition gas as a precursor gas to perform ignition discharge;

[0095] Controlling the gas flow rate of the ignition gas within the range of 2000-5000 sccm;

[0096] Maintaining the pressure in the reaction system at less than 500 mtorr;

[0097] The glow discharge time was maintained at more than 2 s.

[0098] In one embodiment, the pulsed introduction of water vapor comprises:

[0099] The gas flow rate of the water vapor pulsed in once is controlled within 20-100 sccm;

[0100] The time for a pulse of water vapor is maintained within the range of 3-20s.

[0101] In one embodiment, stopping the glow discharge and evacuating the residual gas in the reaction system comprises:

[0102] Turn off the remote plasma source;

[0103] The pressure in the reaction system is controlled to be less than 500 mtorr;

[0104] Control the pumping time to more than 5s.

[0105] In one embodiment, the ignition gas comprises an inert gas.

[0106] In one embodiment, the ignition gas includes argon and / or helium.

[0107] The present invention also provides a reaction system, comprising:

[0108] Remote plasma source;

[0109] a reaction chamber connected to the remote plasma source;

[0110] The control system for controlling the remote plasma source and the reaction chamber includes a memory and a processor. The memory stores computer instructions that can be run on the processor. When the processor runs the computer instructions, the oxide film repair method as described above is executed.

[0111] The oxide film repair method and reaction system of the present invention have the following beneficial effects:

[0112] First, precise water vapor pulse injection glow discharge technology. After the starter gas discharge is stable, the present invention accurately injects trace amounts of water vapor in a pulsed manner to repair the oxide film inside the reaction system. This pulse injection technology not only achieves precise control of the amount of water vapor, but also avoids the impact of residual water vapor on subsequent reduction steps, thereby improving the reliability and stability of the overall process.

[0113] Second, it effectively inhibits over-oxidation. The present invention successfully repairs the oxide film while avoiding over-oxidation on the surface of the processed sample (substrate) by injecting a small amount of water vapor in a pulsed manner. This not only protects the integrity of the oxide film, but also improves the efficiency of the subsequent reduction step.

[0114] Those skilled in the art will appreciate that the various illustrative components, modules, blocks, units, circuits, systems, and steps described in conjunction with the embodiments disclosed herein may be implemented by hardware, software (including firmware, resident software, microcode, etc.), or a combination of the two. To clearly illustrate this interchangeability of hardware and software, various illustrative components, modules, blocks, units, circuits, systems, and steps are described above in general terms in terms of their functionality. Whether such functionality is implemented as hardware or software depends on the specific application and the design constraints imposed on the overall system. The technician may implement the described functionality in different ways for each specific application, but such implementation decisions should not be interpreted as resulting in a departure from the scope of the present invention.

[0115] Flowcharts are used in the present application to illustrate the operations or steps performed by the system according to the embodiments of the present application. It should be understood that the preceding or following operations or steps are not necessarily performed accurately in order. On the contrary, various operations or steps may be processed in reverse order or simultaneously. At the same time, other operations or steps may be added to these processes, or one or more operations or steps may be removed from these processes.

[0116] Unless explicitly stated in the claims, the order of the processing elements and sequences, the use of alphanumeric characters, or the use of other names described in the present application are not intended to limit the order of the processes and methods of the present application.

[0117] Furthermore, aspects of the present application may take the form of a computer product embodied in one or more computer-readable media including computer-readable program code.

[0118] A computer readable signal medium may include a propagated data signal containing computer program code, such as in baseband or as part of a carrier wave. The propagated signal may have a variety of forms, including electromagnetic, optical, etc., or a suitable combination. A computer readable signal medium may be any computer readable medium other than a computer readable storage medium, which may be connected to an instruction execution system, device or apparatus to communicate, propagate or transmit a program for use. The program code on the computer readable signal medium may be propagated through any suitable medium, including radio, cable, fiber optic cable, RF, or similar media, or any combination of the above media.

[0119] The computer program coding required for the operation of each part of the application can be written in any one or more programming languages, including object-oriented programming languages ​​such as Java, Scala, Smalltalk, Eiffel, JADE, Emerald, C++, C#, VB.NET, Python, etc., conventional procedural programming languages ​​such as C language, Visual Basic, Fortran 2003, Perl, COBOL 2002, PHP, ABAP, dynamic programming languages ​​such as Python, Ruby and Groovy, or other programming languages, etc. The program coding can be run completely on the user's computer, or run on the user's computer as an independent software package, or run partly on the user's computer and partly on the remote computer, or run completely on the remote computer or server. In the latter case, the remote computer can be connected to the user's computer through any network form, such as a local area network (LAN) or a wide area network (WAN), or connected to an external computer (e.g., via the Internet), or in a cloud computing environment, or used as a service such as software as a service (SaaS).

[0120] Those skilled in the art will appreciate that information, signals, and data may be represented using any of a variety of different technologies and techniques. For example, data, instructions, commands, information, signals, bits, symbols, and chips cited throughout the above description may be represented by voltage, current, electromagnetic waves, magnetic fields or magnetic particles, optical fields or optical particles, or any combination thereof.

[0121] The steps of the method or algorithm described in conjunction with the embodiments disclosed herein may be directly embodied in hardware, in a software module executed by a processor, or in a combination of the two. The software module may reside in a RAM memory, a flash memory, a ROM memory, an EPROM memory, an EEPROM memory, a register, a hard disk, a removable disk, a CD-ROM, or any other form of storage medium known in the art. An exemplary storage medium is coupled to a processor so that the processor can read and write information from / to the storage medium. In an alternative, a storage medium may be integrated into a processor. In an alternative, a processor and a storage medium may reside in a user terminal as discrete components.

[0122] In one or more exemplary embodiments, the functions described may be implemented in hardware, software, firmware, or any combination thereof. If implemented as a computer program product in software, each function may be stored on or transmitted by a computer-readable medium as one or more instructions or codes. Computer-readable media include both computer storage media and communication media, including any medium that facilitates the transfer of a computer program from one place to another. Storage media may be any available medium that can be accessed by a computer. As an example and not limitation, such a computer-readable medium may include RAM, ROM, EEPROM, CD-ROM or other optical disk storage, disk storage or other magnetic storage device, or any other medium that can be used to carry or store the desired program code in the form of an instruction or data structure and can be accessed by a computer. Any connection is also properly referred to as a computer-readable medium. For example, if the software is transmitted from a website, a server, or other remote source using a coaxial cable, a fiber optic cable, a twisted pair, a digital subscriber line (DSL), or wireless technologies such as infrared, radio, and microwaves, the coaxial cable, fiber optic cable, twisted pair, DSL, or wireless technologies such as infrared, radio, and microwaves are included in the definition of the medium. Disk and disc as used herein include compact disc (CD), laser disc, optical disc, digital versatile disc (DVD), floppy disk and Blu-ray disc, wherein disk often reproduces data magnetically, while disc reproduces data optically with lasers. Combinations of the above should also be included within the scope of computer-readable media.

[0123] The terms and expressions used above are for descriptive purposes only, and the present invention should not be limited to these terms and expressions. The use of these terms and expressions does not mean to exclude any equivalent features of the illustrations and descriptions (or parts thereof), and it should be recognized that various modifications that may exist should also be included in the scope of the claims. Other modifications, changes and substitutions may also exist. Accordingly, the claims should be deemed to cover all such equivalents.

[0124] Similarly, it should be noted that in order to simplify the description of the disclosure of this application and thus facilitate the understanding of one or more embodiments of the invention, in the foregoing description of the embodiments of this application, multiple features are sometimes combined into one embodiment, drawing or description thereof. However, this disclosure method does not mean that the features required by the object of this application are more than the features mentioned in the claims.

[0125] Similarly, it should be pointed out that although the present invention has been described with reference to the current specific embodiments, ordinary technicians in this technical field should realize that the above embodiments are only used to illustrate the present invention, and various equivalent changes or substitutions may be made without departing from the spirit of the present invention. Therefore, as long as the changes and modifications to the above embodiments are within the scope of the essential spirit of the present invention, they will fall within the scope of the claims of this application.

Claims

1. A method for repairing an oxide film, characterized in that: include: Introducing a starter gas into the reaction system to perform glow discharge and form an initial plasma environment; In the initial plasma environment, water vapor is pulsed, the water vapor is excited into plasma and repairs the surface of the oxide film in the reaction system; stopping the glow discharge and evacuating the residual gas in the reaction system; Performing a reduction process on the natural oxide and metal oxide on the surface of the substrate; All the above steps are repeated and executed in a cycle until the number of particles in the reaction system reaches a preset target.

2. The method for repairing an oxide film according to claim 1, characterized in that: The substrate is first transferred into the reaction system before the starter gas is introduced for glow discharge.

3. The method for repairing an oxide film according to claim 1, characterized in that: The water vapor is excited into plasma and the surface of the oxide film in the reaction system is repaired again, comprising: The water vapor is ionized and excited by utilizing the high-energy discharge characteristics of the initial plasma environment to decompose oxygen ions, oxygen atoms and hydroxyl radicals with strong oxidizing properties; reoxidizing the surface of the oxide film; A protective layer is formed on the surface of the oxide thin film.

4. The method for repairing an oxide film according to claim 1, characterized in that: The process of reducing the natural oxide and the metal oxide on the surface of the substrate includes using hydrogen active groups to perform a reduction reaction on the natural oxide and the metal oxide.

5. The method for repairing an oxide film according to claim 1, characterized in that: The reaction system includes a remote plasma source and a reaction chamber connected to the remote plasma source.

6. The method for repairing an oxide film according to claim 1, characterized in that: Introducing a starter gas into the reaction system for glow discharge to form an initial plasma environment includes: Turning on the remote plasma source and using the ignition gas as a precursor gas to perform ignition discharge; Controlling the gas flow rate of the ignition gas within the range of 2000-5000 sccm; Maintaining the pressure in the reaction system at less than 500 mtorr; The glow discharge time was maintained at more than 2 s.

7. The method for repairing an oxide film according to claim 1, characterized in that: The pulsed introduction of water vapor comprises: The gas flow rate of the water vapor introduced in a pulsed manner is controlled within 20-100 sccm; The time for a pulse of water vapor is maintained within the range of 3-20s.

8. The method for repairing an oxide film according to claim 1, characterized in that: Stopping the glow discharge and evacuating the residual gas in the reaction system includes: Turn off the remote plasma source; The pressure in the reaction system is controlled to be less than 500 mtorr; Control the pumping time to more than 5s.

9. The method for repairing an oxide film according to claim 1, characterized in that: The ignition gas includes an inert gas.

10. The method for repairing an oxide film according to claim 1, characterized in that: The ignition gas includes argon and / or helium.

11. A reaction system, characterized in that: include: Remote plasma source; a reaction chamber connected to the remote plasma source; A control system for controlling the remote plasma source and the reaction chamber includes a memory and a processor, wherein the memory stores computer instructions that can be executed on the processor, and when the processor executes the computer instructions, the oxide film repair method according to any one of claims 1 to 10 is executed.

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