Semiconductor equipment carrier calibration method and defect reinspection method
By using the calibration substrate on the semiconductor device stage to obtain mark coordinates and calculate coordinate conversion parameters, accurate calibration between stages is achieved, the problem of positioning difficulties in defect detection and re-checking is solved, and the detection efficiency and accuracy are improved.
Patent Information
- Application Number
- CN202311267742.6
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2023-09-27
- Publication Date
- 2025-03-28
AI Technical Summary
In semiconductor processes, the positional offset between the defect detection machine and the re-inspection machine leads to difficulty in positioning during re-inspection of defects, affecting the smoothness of product defect detection.
A semiconductor device stage calibration method is provided, and precise calibration between stages is achieved by using a calibration substrate to obtain mark coordinates on the stages of two devices, and calculate coordinate conversion parameters.
Fast and accurate calibration between the second device and the first device stage is achieved, the efficiency and accuracy of defect re-checking are improved, and the step of screening substrates from the production line is avoided.
Smart Images
Figure CN119725125A_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to the field of semiconductor technology, and in particular to a semiconductor equipment stage calibration method and a defect re-inspection method. Background Art
[0002] Defect detection is an important part of evaluating semiconductor processes. By scanning the wafer with a defect detection machine, we can understand the various defects that appear in the wafer during the current process. We can also use the images obtained through re-inspection to determine the defect type and further analyze the source of the defect, thereby providing data support for improving product yield. When re-inspecting defects, it is necessary to import the defect location coordinates into the re-inspection machine, and re-locate the defects in the re-inspection machine to obtain the defect morphology image.
[0003] Defect re-inspection machines are usually more accurate than defect detection machines. For example, scanning electron microscopes, as the critical dimensions in the process become smaller and smaller, the defects to be detected also become smaller. Therefore, when locating the defect, the field of view needs to be reduced so that the defect morphology can be seen clearly. After defect detection, it is generally necessary to obtain a morphological image on a defect re-inspection machine.
[0004] When re-inspecting defects, due to the positional offset between the defect detection machine and the defect re-inspection machine, the defect needs to be re-located. In related technologies, when the defect re-inspection fails, suitable defects are usually found on the wafer for re-location, which seriously affects the smoothness of product defect detection. Summary of the invention
[0005] The object of the present invention is to provide a semiconductor device carrier calibration method and a defect re-inspection method, so as to complete the calibration between the carriers of a second device and a first device at any time, accurately and efficiently.
[0006] In order to solve the above technical problems, the present invention provides a semiconductor device stage calibration method, comprising:
[0007] Providing a calibration substrate, comprising M partitions, each of which is provided with a mark, where M is an integer greater than or equal to 2;
[0008] Placing the calibration substrate on a stage of a first device, and using the first device to obtain coordinates of at least one mark of each partition on the calibration substrate as a first coordinate set;
[0009] Placing the calibration substrate on a stage of a second device, and using the second device to obtain coordinates of marks on the calibration substrate corresponding to the first coordinate set, and using the coordinates as a second coordinate set;
[0010] Coordinate conversion parameters of the second coordinate set and the first coordinate set are obtained according to the first coordinate set and the second coordinate set, and the second device and the stage of the first device are calibrated using the coordinate conversion parameters.
[0011] Optionally, the calibration substrate is circular, and the M partitions include a central area and a plurality of annular areas which are sequentially connected from the inside to the outside.
[0012] Optionally, each of the annular areas further includes N sector ring areas, each of the sector ring areas includes at least one first mark and at least one second mark, and N is an integer greater than or equal to 2.
[0013] Optionally, the mark of each partition includes at least one first mark and at least one second mark, and the size of the first mark is larger than the size of the second mark.
[0014] Optionally, the order of magnitude of the first mark size is greater than or equal to the order of magnitude of the second mark size.
[0015] Optionally, the step of acquiring the coordinates of the first mark or the second mark on the first stage or the second stage includes:
[0016] Perform at least two inspections on the calibration substrate to obtain at least two coordinates of the first mark or the second mark, and calculate an average value of the two coordinates as the coordinate of the first mark or the second mark in the first coordinate set or the second coordinate set.
[0017] Optionally, the step of acquiring the second coordinate set includes:
[0018] According to the coordinates of the first mark in the first coordinate set, move the stage of the second device to align with the first mark to obtain a plurality of third coordinates;
[0019] Obtaining first coordinate transformation parameters using the third coordinate and the coordinates of the first marker in the first coordinate set;
[0020] calibrating the coordinates of the second mark in the first coordinate set using the first coordinate transformation parameters, moving the second stage accordingly to align with the second mark, and obtaining a plurality of fourth coordinates;
[0021] Obtaining a second coordinate conversion parameter according to the fourth coordinate and the coordinate of the second mark in the first coordinate set;
[0022] The coordinates of the first mark and the second mark in the first coordinate set are calibrated using the second coordinate transformation parameters, and the second stage is moved accordingly to align the first mark and the second mark to obtain the second coordinate set.
[0023] Optionally, the step of obtaining the coordinate transformation parameters includes:
[0024] The first coordinate set and the second coordinate set are expressed in a Cartesian coordinate system, and the coordinate transformation parameters of the stage of the second device relative to the stage of the first device are (P, Q),
[0025]
[0026] Among them, (X i1 , Y i1 ) is the i-th coordinate in the first coordinate set, (X i2 , Y i2 ) is the i-th coordinate in the second coordinate set, W i is the weight coefficient corresponding to the i-th coordinate, and the sum of the weight coefficients of n coordinates is 1.
[0027] Optionally, coordinates within the same partition have the same weight coefficient.
[0028] According to another aspect of the present invention, a defect re-inspection method is also provided, comprising:
[0029] The semiconductor device stage calibration method described above is used to calibrate a first device and a second device, wherein the first device is a defect detection device and the second device is a defect re-inspection device;
[0030] Acquire the defect and its coordinates using the first device;
[0031] The coordinates are input into the second device to re-inspect the defect.
[0032] In summary, the semiconductor device carrier calibration method provided by the present invention places a calibration substrate on the carrier of the first device to obtain a first coordinate set of the calibration substrate based on the first device, the first coordinate set includes the coordinates of at least one mark of each partition, and then places the calibration substrate on the carrier of the second device, and uses the above-mentioned first coordinate set to obtain the coordinates of the carrier of the second device in which some marks are based, and uses it as the second coordinate set, and then obtains the coordinate conversion parameters of the second coordinate set relative to the first coordinate set based on the first coordinate set, and uses the coordinate conversion parameters to calibrate the carrier of the second device, thereby quickly and accurately achieving the calibration between the carriers of the first device and the second device. Moreover, the calibration method of this embodiment does not need to screen available substrates (such as product substrates) from the production line, and uses a reusable calibration substrate with better detection effect, which can complete the calibration between the carriers of the second device and the first device at any time, accurately and efficiently. BRIEF DESCRIPTION OF THE DRAWINGS
[0033] Those skilled in the art should understand that the drawings are provided for a better understanding of the present invention, but do not constitute any limitation on the scope of the present invention.
[0034] Figure 1 is a flow chart of a semiconductor device stage calibration method provided in Embodiment 1;
[0035] Figure 2 A schematic diagram of a calibration substrate provided in Example 1;
[0036] Figure 3a and Figure 3b A schematic diagram of another calibration substrate provided in Example 1;
[0037] Figure 4 This is a flow chart of the defect review method provided in Example 2.
[0038] In the attached figure:
[0039] 10-calibration substrate; 11-center area; 12-first annular area; 13-second annular area; 14-sector ring area; 15-partition; 21-first mark; 22-second mark; 23-third mark; 24-mark. DETAILED DESCRIPTION
[0040] In order to make the purpose, advantages and features of the present invention clearer, the present invention is further described in detail below in conjunction with the accompanying drawings and specific embodiments. It should be noted that the drawings are all in a very simplified form and are not drawn to scale, and are only used to conveniently and clearly assist in explaining the purpose of the embodiments of the present invention. In addition, the structure shown in the drawings is often a part of the actual structure. In particular, the emphasis of each drawing is different, and sometimes different scales are used.
[0041] As used in the present invention, the singular forms "one", "an", and "the" include plural objects, the term "or" is usually used to include the meaning of "and / or", the term "several" is usually used to include the meaning of "at least one", and the term "at least two" is usually used to include the meaning of "two or more". In addition, the terms "first", "second", and "third" are used only for descriptive purposes and cannot be understood as indicating or implying relative importance or implicitly indicating the number of indicated technical features. Therefore, the features defined as "first", "second", and "third" may explicitly or implicitly include one or at least two of the features, unless the content clearly indicates otherwise.
[0042] Embodiment 1
[0043] Embodiment 1 provides a semiconductor device stage calibration method.
[0044] Figure 1This is a flow chart of the semiconductor device stage calibration method provided in Example 1.
[0045] like Figure 1 As shown, the semiconductor device stage calibration method provided in this embodiment includes:
[0046] S01: providing a calibration substrate, comprising M partitions, each of which is provided with a mark, where M is an integer greater than or equal to 2;
[0047] S02: placing the calibration substrate on a first stage of a first device, and using the first device to obtain coordinates of at least one mark of each partition on the calibration substrate as a first coordinate set;
[0048] S03: placing the calibration substrate on a second stage of a second device, and using the second device to obtain coordinates of marks on the calibration substrate corresponding to the first coordinate set, and use the coordinates as a second coordinate set;
[0049] S04: Obtain coordinate conversion parameters of the second coordinate set and the first coordinate set according to the first coordinate set and the second coordinate set, and use the coordinate conversion parameters to calibrate the second device and the stage of the first device.
[0050] First, execute step S01, please refer to Figure 2 , providing a calibration substrate, including M partitions, each partition is provided with a mark, and M is an integer greater than or equal to 2.
[0051] The calibration substrate may match the product substrate running on the semiconductor device, for example, having the same shape, the same size, etc. In this embodiment, the product substrate may be a wafer, and the calibration substrate may be a round substrate with the same size (for example, diameter and thickness). The calibration substrate has a flat surface, and a plurality of marks are provided on the flat surface, and no graphics other than the marks may be provided.
[0052] The plurality of marks on the calibration substrate include at least two marks of different sizes, namely a first mark and a second mark, and the size of the first mark is larger than the size of the second mark. The size of the second mark may be the minimum size (highest detection accuracy) that the semiconductor device can detect or measure, and the order of magnitude of the size of the first mark is preferably larger than the order of magnitude of the size of the second mark, for example, one order of magnitude larger. In addition, the plurality of marks may also be provided with a plurality of marks having a size larger than the first mark and a plurality of marks having a size between the first mark and the second mark, for matching semiconductor devices with different detection accuracy.
[0053] The surface of the calibration substrate may include (be divided into) M partitions (M is an integer greater than or equal to 2), and each partition is provided with the above-mentioned mark (for example, the first mark and the second mark). Taking the circular calibration substrate as an example, the M partitions include a center area and a plurality of annular areas that are sequentially connected from the inside to the outside. Furthermore, in the above-mentioned plurality of annular areas, each annular area can be further subdivided into N sector ring areas (N is an integer greater than or equal to 2), and the above-mentioned mark is provided in each sector ring area so that the above-mentioned mark is relatively evenly distributed on the surface of the calibration substrate. In addition, different marks distributed in different sector ring areas of the same annular area can also be arranged in the same order, and similar marks in different annular areas are staggered in the radial direction so that each of the above-mentioned marks is spread as much as possible on the surface of the calibration substrate.
[0054] It should be noted that the marks of this embodiment can be formed on the calibration substrate by physical and chemical methods such as photolithography, etching, and laser, wherein different types of marks can have different shapes for easy distinction. Of course, different types of marks are formed in the same way and are preferably circular so that their center positions can be accurately obtained as their coordinates.
[0055] It is understandable that if Figure 3a and Figure 3b As shown, in some other examples of this embodiment, the partitions 15 may also be suitable shapes such as squares, triangles or diamonds, and the above-mentioned partitions 15 may be arranged at intervals (not connected) and evenly distributed on the surface of the calibration substrate 10; in some other examples, the marks 24 arranged in the above-mentioned partitions may all have the same shape and / or the same size to adapt to the needs of different machines.
[0056] Please continue to refer to Figure 2 , the calibration substrate may be a circle with a diameter of 300mm, and its surface may include a central area located in the center and with a diameter of 10mm to 70mm, a first annular area with an outer diameter of 75mm to 135mm, and a second annular area outside the first annular area. The first annular area and the second annular area may each include four sectoral areas, and the central angle corresponding to each sectoral area may be 90°, and the sectoral areas of the first annular area and the second annular area are aligned. Among them, the first mark, the second mark and the third mark are evenly and sequentially arranged on the central area and the sectoral area. The first mark may be circular, and its size may be 1 micron to 5 microns, the second mark may be triangular, and its size may be 50 nanometers to 200 nanometers, and the third mark may be square, and its size may be 400 nanometers to 600 nanometers.
[0057] Next, step S02 is performed to place the calibration substrate on a first stage of a first device, and use the first device to obtain coordinates of at least one mark of each partition on the calibration substrate as a first coordinate set.
[0058] The first device may be a semiconductor device for appearance inspection (e.g., a defect detection device), and the calibration substrate is placed on a stage (e.g., a first stage) of the first device, and the marks on the calibration substrate are scanned (detected) by the first device to obtain the coordinates of the above marks, and the coordinates of the above marks are used as the first coordinate set. Preferably, the calibration substrate may be scanned at least twice to obtain at least two coordinates of each of the above marks, and the average of the at least two coordinates is used as the coordinate of the corresponding mark in the first coordinate set to avoid the influence of random errors.
[0059] In one example, the entire surface of the calibration substrate may be scanned to obtain the coordinates of each mark on the calibration substrate to establish the first coordinate set. In other examples, only some of the marks on the calibration substrate are scanned to obtain the coordinates of some of the marks to establish the first coordinate set to optimize the scanning time. It is worth mentioning that even if only the coordinates of some of the marks are obtained, it is still necessary to ensure that each ring sector and the center area include at least one mark of different types.
[0060] The coordinates in the first coordinate set may be established according to a Cartesian coordinate system or a polar coordinate system.
[0061] Next, step S03 is executed to place the calibration substrate on a stage of a second device, and the coordinates of the marks on the calibration substrate corresponding to the first coordinate set are obtained by using the second device, and used as the second coordinate set.
[0062] The second device may be a semiconductor device for appearance re-inspection (e.g., electron beam detection equipment, scanning electron microscope, transmission electron microscope, etc.), the calibration substrate is placed on a stage (e.g., second stage) of the second device, and the marks on the calibration substrate are scanned (re-inspected) by the second device to obtain the coordinates of the above marks, and the coordinates of the above marks are used as the second coordinate set. Preferably, the calibration substrate may be scanned at least twice to obtain at least two coordinates of each of the above marks, and the average of the above at least two coordinates is used as the coordinate of the corresponding mark in the second coordinate set to avoid the influence of random errors.
[0063] Compared with scanning the entire surface to obtain marks, this embodiment can preferably select some marks in the first coordinate set as the object to be re-inspected, that is, based on the coordinates of the selected object to be re-inspected, directly move the second stage (calibration substrate) to the above coordinates, and then scan and search for corresponding marks in the vicinity to obtain the coordinates. Among them, each partition on the calibration substrate (including each sector ring area and the center area) should include at least one of the above different types of marks (such as the first mark and the second mark, etc.).
[0064] Furthermore, in the present embodiment, taking the first mark and the second mark as an example, the second stage can be moved to align with the first mark according to the coordinates of several first marks in the first coordinate set (several selected objects to be re-inspected), and thereby obtain several third coordinates (the actual coordinates of the first mark on the second stage) based on the detection accuracy corresponding to the first mark; then, the first coordinate conversion parameters are obtained using the above-mentioned several third coordinates and the coordinates of the first mark in the first coordinate set; the coordinates of the second mark in the first coordinate set are preliminarily calibrated (based on the detection accuracy corresponding to the first mark) using the first coordinate conversion parameters, and the second stage is moved to align with the above-mentioned several second marks according to the coordinates of the preliminarily calibrated second coordinates, and obtain several fourth coordinates (the actual coordinates of the second mark on the second stage) based on the detection accuracy corresponding to the second mark; the second coordinate conversion parameters are obtained according to the above-mentioned several fourth coordinates and the coordinates of the second mark in the first coordinate set; the coordinates of the first mark and the second mark in the first coordinate set are further calibrated using the second coordinate conversion parameters, and the second stage is moved to align with the first mark and the second mark accordingly, and the second coordinate set is obtained. It should be understood that due to the small size of the second mark, the detection accuracy (magnification) needs to be set higher to obtain the second mark, but the larger the magnification, the smaller the detection field of view and the slower the search. Directly moving the second mark on the second stage with the coordinates of the first coordinate set can easily make the second mark completely outside the field of view of the second device, seriously affecting the efficiency of re-inspection. The size of the first mark is relatively large, and it can be easily searched on the second stage with the coordinates in the first coordinate set at a relatively small magnification. The first coordinate conversion parameters are used to perform a preliminary calibration (coordinate system calibration) on the second stage, so that it is relatively easier to search for the second mark at a high magnification using the second stage after the preliminary calibration, and the second coordinate conversion parameters are obtained using the small amount of fourth coordinates searched, and the second stage is further calibrated again, so that the coordinates of the mark corresponding to the first coordinate set on the calibration substrate can be efficiently and accurately obtained.
[0065] Of course, as in this embodiment Figure 2 As shown, in addition to the first mark and the second mark, the calibration substrate also has a third mark. After the first mark is used to preliminarily calibrate the second stage, the third mark (the size of which is between the first mark and the second mark) is used to calibrate the second stage again, so as to search for the second mark, and the second mark is used to calibrate the second stage again to establish the second coordinate set. In addition, if there are multiple types of marks on the calibration substrate, such as the first to fourth marks of different size categories, only the marks of some size categories (such as the third mark and the fourth mark) can be used for the above calibration according to actual needs to establish the second coordinate set.
[0066] Next, step S04 is executed to obtain coordinate conversion parameters of the second coordinate set and the first coordinate set according to the first coordinate set and the second coordinate set, and the second device and the stage of the first device are calibrated using the coordinate conversion parameters.
[0067] In this embodiment, a Cartesian coordinate system (two-dimensional) can be used to establish the first coordinate set and the second coordinate set, that is, the i-th coordinate in the first coordinate set is expressed as (X i1 , Y i1 ), the i-th coordinate in the second coordinate set is represented by (X i2 , Y i2 ). Among them, the coordinate transformation parameter P of the X direction can be
[0068]
[0069] Among them, W i is the weight coefficient corresponding to the i-th coordinate on the calibration substrate, and the sum of the weight coefficients of n coordinates is 1. In one example, W i It can be the weight coefficient corresponding to the partition (sector ring area or center area) where the i-th coordinate is located, that is, the coordinates in the same partition have the same weight, and different partitions may have different weights. For example, the weight coefficient of the second annular area is greater than the weight coefficient of the first annular area. Of course, the weight coefficients between specific different partitions can be obtained by using a corresponding algorithm based on the deviation data in the historical data. In another example, the weight coefficient of each coordinate is the same, that is, the coordinate conversion parameter P in the X direction is the average value of the X-direction deviations of all coordinates.
[0070] Similarly, the Y-axis coordinate transformation parameter Q can be
[0071]
[0072] Among them, W i To calibrate the weight coefficient corresponding to the i-th coordinate on the substrate, the sum of the weight coefficients of n coordinates is 1.
[0073] Thus, the coordinate transformation parameters (P, Q) of the second coordinate set relative to the first coordinate set can be obtained, and the second stage of the second device can be calibrated using the coordinate transformation parameters (P, Q), so that the coordinate system of the second stage moves in the opposite direction (P, Q) or moves (-P, -Q), so that the same mark on the calibration substrate has coordinates as close as possible on the first stage and the second stage, thereby achieving the plane position calibration of the second stage relative to the first stage (that is, the second device relative to the first device). Moreover, the calibration method of this embodiment does not need to screen available substrates (such as product substrates) from the production line, and uses a reusable calibration substrate with better detection effect, which can complete the calibration of the second stage relative to the first stage at any time, accurately and efficiently. Of course, in some examples, it is also feasible to use the second stage to reversely calibrate the first stage. It should be understood that compared with the related art that uses several defects on the product wafer for positioning, the morphology of defects on the product wafer (usually irregular shapes) varies greatly. When it comes to different detection conditions of different equipment, the above differences will be further amplified, and the distribution of defects on the product wafer is difficult to predict, which is not conducive to the evaluation of overall deviations. In addition, finding multiple suitable defects on the product wafer is itself time-consuming and labor-intensive.
[0074] In addition, in addition to being used to automatically calibrate the first stage or the second stage, the calibration method of this embodiment can also use the above-mentioned coordinate conversion parameters (P, Q) to perform long-term monitoring of the first device or the second device itself (the machine itself). For the first device or the second device, the larger coordinate conversion parameters (P, Q) are not only related to the deviation between the first stage and the second stage, but may also be a problem in the detection process (scanning process, re-inspection process) of the first device or the second device. Therefore, if a larger coordinate conversion parameter (P, Q) appears, it is necessary to determine whether there is a problem with the position of the first stage or the second stage, or a problem with other components of the first device or the second device. Specifically, the coordinate conversion parameters (P, Q) of the first device and the second device can be periodically obtained according to the number of substrates or time intervals of the goods, and statistical process control (SPC) can be established accordingly to achieve long-term monitoring of the first device and the second device to ensure the stable and normal operation of the semiconductor equipment.
[0075] Embodiment 2
[0076] Embodiment 2 provides a defect re-inspection method.
[0077] Figure 4 This is a flow chart of the defect review method provided in Example 2.
[0078] like Figure 4 As shown, the defect re-inspection method provided in this embodiment includes:
[0079] S01: calibrating a first device and a second device using the semiconductor device stage calibration method as described above, wherein the first device is a defect detection device, and the second device is a defect re-inspection device;
[0080] S02: Acquire defects and their coordinates using the first device;
[0081] S03: Input the coordinates into the second device to re-inspect the defect.
[0082] Among them, the first device can be, for example, an appearance defect detection device such as an automatic optical inspection device, and the second device can be, for example, a defect re-inspection device such as an electron beam inspection device, a scanning electron microscope, a transmission electron microscope, etc., and the calibration method as in the above embodiment is used to calibrate the stage of the second device relative to the stage of the first device, that is, the defect coordinates obtained by the first device can be directly applied to the second device to re-inspect the defect.
[0083] In summary, the semiconductor device carrier calibration method provided by the present invention places a calibration substrate on the carrier of the first device to obtain a first coordinate set of the calibration substrate based on the first device, the first coordinate set includes the coordinates of at least one mark of each partition, and then places the calibration substrate on the carrier of the second device, and uses the above-mentioned first coordinate set to obtain the coordinates of the carrier of the second device in which some marks are based, and uses it as the second coordinate set, and then obtains the coordinate conversion parameters of the second coordinate set relative to the first coordinate set based on the first coordinate set, and uses the coordinate conversion parameters to calibrate the carrier of the second device, thereby quickly and accurately achieving the calibration between the carriers of the first device and the second device. Moreover, the calibration method of this embodiment does not need to screen available substrates (such as product substrates) from the production line, and uses a reusable calibration substrate with better detection effect, which can complete the calibration between the carriers of the second device and the first device at any time, accurately and efficiently.
[0084] The above description is only a description of the preferred embodiments of the present invention, and is not intended to limit the scope of the present invention. Any changes or modifications made by a person skilled in the art in the field of the present invention based on the above disclosure shall fall within the scope of protection of the claims.
Claims
1. A semiconductor device stage calibration method, characterized in that: include: Providing a calibration substrate, comprising M partitions, each of which is provided with a mark, where M is an integer greater than or equal to 2; Placing the calibration substrate on a stage of a first device, and using the first device to obtain coordinates of at least one mark of each partition on the calibration substrate as a first coordinate set; Placing the calibration substrate on a stage of a second device, and using the second device to obtain coordinates of marks on the calibration substrate corresponding to the first coordinate set, and using the coordinates as a second coordinate set; Coordinate conversion parameters of the second coordinate set and the first coordinate set are obtained according to the first coordinate set and the second coordinate set, and the second device and the stage of the first device are calibrated using the coordinate conversion parameters.
2. The semiconductor device stage calibration method according to claim 1, characterized in that: The calibration substrate is circular, and the M partitions include a central area and a plurality of annular areas which are sequentially connected from the inside to the outside.
3. The semiconductor device stage calibration method according to claim 2, characterized in that: Each of the annular areas further includes N sector ring areas, each of the sector ring areas includes at least one of the first marks and at least one of the second marks, and N is an integer greater than or equal to 2.
4. The semiconductor device stage calibration method according to claim 1, characterized in that: The marks of each partition include at least one first mark and at least one second mark, and the size of the first mark is larger than that of the second mark.
5. The semiconductor device stage calibration method according to claim 4, characterized in that: The first mark size is of an order of magnitude greater than or equal to the order of magnitude of the second mark size.
6. The semiconductor device stage calibration method according to claim 4, characterized in that: The step of acquiring the coordinates of the first mark or the second mark on the first stage or the second stage comprises: Perform at least two inspections on the calibration substrate to obtain at least two coordinates of the first mark or the second mark, and calculate an average value of the two coordinates as the coordinate of the first mark or the second mark in the first coordinate set or the second coordinate set.
7. The semiconductor device stage calibration method according to claim 4 or 6, characterized in that: The step of acquiring the second coordinate set comprises: According to the coordinates of the first mark in the first coordinate set, move the stage of the second device to align with the first mark to obtain a plurality of third coordinates; Obtaining first coordinate transformation parameters using the third coordinate and the coordinates of the first marker in the first coordinate set; calibrating the coordinates of the second mark in the first coordinate set using the first coordinate transformation parameters, moving the second stage accordingly to align with the second mark, and obtaining a plurality of fourth coordinates; Obtaining a second coordinate conversion parameter according to the fourth coordinate and the coordinate of the second mark in the first coordinate set; The coordinates of the first mark and the second mark in the first coordinate set are calibrated using the second coordinate transformation parameters, and the second stage is moved accordingly to align the first mark and the second mark to obtain the second coordinate set.
8. The semiconductor device stage calibration method according to claim 1, characterized in that: The step of obtaining the coordinate transformation parameters comprises: The first coordinate set and the second coordinate set are expressed in a Cartesian coordinate system, and the coordinate transformation parameters of the stage of the second device relative to the stage of the first device are (P, Q), Among them, (X i1 , Y i1 ) is the i-th coordinate in the first coordinate set, (X i2 , Y i2 ) is the i-th coordinate in the second coordinate set, W i is the weight coefficient corresponding to the i-th coordinate, and the sum of the weight coefficients of n coordinates is 1.
9. The semiconductor device stage calibration method according to claim 8, characterized in that: Coordinates within the same partition have the same weight coefficient.
10. A defect re-inspection method, characterized in that: include: Calibrate a first device and a second device using the semiconductor device stage calibration method according to any one of claims 1 to 9, wherein the first device is a defect detection device and the second device is a defect re-inspection device; Acquire the defect and its coordinates using the first device; The coordinates are input into the second device to re-inspect the defect.