Control method and device of wafer etching system, computer equipment and system

Abstract

The invention relates to the technical field of integrated circuits, in particular to a control method and device of a wafer etching system, computer equipment and the wafer etching system. The control method of the wafer etching system comprises the following steps: acquiring a corresponding relation between the chuck temperature and the critical dimension of a wafer and the temperature adjustment amplitude of the chuck temperature in the etching process; obtaining an actual critical dimension of a previous batch of wafers after etching and a target critical dimension corresponding to the actual critical dimension, wherein the previous batch of wafers are wafers processed before the target batch; acquiring a critical dimension fluctuation value according to the corresponding relation and the temperature adjustment amplitude; calculating a critical dimension difference value between the actual critical dimension value and the target critical dimension value; and determining the wafer operation flow of the target batch based on the critical dimension difference value and the critical dimension fluctuation value. Whether the target batch of wafers are normally operated or not is judged by acquiring the actual key size of the previous batch of wafers after etching, the chuck temperature in the etching process and the target key size.

Description

Technical Field

[0001] The present disclosure relates to the field of integrated circuit technology, and in particular to a control method, device, computer equipment and system for a wafer etching system. Background Art

[0002] In the wafer etching process, it is very important to control the critical dimensions of the wafer. The critical dimensions usually refer to the width or spacing of the smallest feature structure on the wafer, and these dimensions have gradually shrunk to the nanometer level. The critical dimensions of the wafer determine the performance, power consumption, reliability and yield of the final chip. At present, during the etching process, the critical dimensions of the wafer often fluctuate due to differences in material properties, the complexity of physical and chemical reactions during the etching process, and the limitations of equipment accuracy. Therefore, how to obtain accurate critical dimensions has become an urgent problem to be solved. Summary of the invention

[0003] Based on this, it is necessary to provide a control method, device, computer equipment and system for a wafer etching system to address the problem of obtaining accurate critical dimensions in the prior art.

[0004] In order to achieve the above objectives, in a first aspect, the present application provides a control method for a wafer etching system, comprising:

[0005] Obtaining the corresponding relationship between the chuck temperature and the critical dimension of the wafer and the temperature adjustment range of the chuck temperature during the etching process;

[0006] Obtaining actual critical dimensions of a previous batch of wafers after etching and their corresponding target critical dimensions, wherein the previous batch of wafers is wafers processed before the target batch;

[0007] According to the corresponding relationship and the temperature adjustment amplitude, a critical dimension fluctuation value is obtained;

[0008] Calculating a critical dimension difference between the actual critical dimension value and the target critical dimension value;

[0009] Based on the critical dimension difference and the critical dimension fluctuation value, a wafer operation process of the target batch is determined.

[0010] In one embodiment, the step of determining the wafer operation flow of the target batch based on the critical dimension difference and the critical dimension fluctuation value includes:

[0011] When the critical dimension difference is greater than the critical dimension fluctuation value, the wafer etching system is locked.

[0012] In one of the embodiments, when the critical dimension difference is greater than the critical dimension fluctuation value, after locking the wafer etching system, the method includes:

[0013] Based on the critical dimension difference, a temperature control unit of the chuck is adjusted.

[0014] In one embodiment, the step of determining the wafer operation flow of the target batch based on the critical dimension difference and the critical dimension fluctuation value includes:

[0015] When the critical dimension difference is less than or equal to the critical dimension fluctuation value, the operation is performed on the wafers of the target batch.

[0016] In one embodiment, the chuck has multiple regions.

[0017] The step of obtaining the corresponding relationship between the chuck temperature and the critical dimension of the wafer comprises:

[0018] Obtaining the corresponding relationship of each area;

[0019] The step of obtaining the key dimension fluctuation value according to the corresponding relationship and the temperature adjustment amplitude includes:

[0020] Determine a target area of ​​the actual critical dimension value on the wafer;

[0021] The critical dimension fluctuation value of the target area is acquired according to the corresponding relationship of the target area and the temperature adjustment amplitude.

[0022] In one embodiment, the temperature adjustment range includes an upper temperature limit and a lower temperature limit.

[0023] The step of obtaining the corresponding relationship between the chuck temperature and the critical dimension of the wafer and the temperature adjustment range of the chuck temperature during the etching process includes:

[0024] Based on the corresponding relationship and the upper temperature limit, calculating the upper limit of the critical dimension;

[0025] Calculating a lower limit value of a critical dimension based on the corresponding relationship and the lower limit value of the temperature;

[0026] Based on the upper limit value of the critical dimension and the lower limit value of the critical dimension, a critical dimension fluctuation value is obtained.

[0027] In a second aspect, the present application provides a control device for a wafer etching system, comprising:

[0028] A first acquisition module is used to acquire the corresponding relationship between the chuck temperature and the critical dimension of the wafer and the temperature adjustment range of the chuck temperature during the etching process;

[0029] A second acquisition module is used to acquire the actual critical dimensions of the previous batch of wafers after etching and the corresponding target critical dimensions thereof, wherein the previous batch of wafers is wafers processed before the target batch;

[0030] A third acquisition module, used for acquiring a key dimension fluctuation value according to the corresponding relationship and the temperature adjustment amplitude;

[0031] A calculation module, used for calculating a critical dimension difference between the actual critical dimension value and the target critical dimension value;

[0032] A determination module is used to determine the wafer operation process of the target batch based on the critical dimension difference and the critical dimension fluctuation value.

[0033] In a third aspect, the present application further provides a computer device, including a memory and a processor, wherein the memory stores a computer program, and when the processor executes the computer program, the following steps are implemented:

[0034] Obtaining the corresponding relationship between the chuck temperature and the critical dimension of the wafer and the temperature adjustment range of the chuck temperature during the etching process;

[0035] Obtaining actual critical dimensions of a previous batch of wafers after etching and their corresponding target critical dimensions, wherein the previous batch of wafers is wafers processed before the target batch;

[0036] According to the corresponding relationship and the temperature adjustment amplitude, a critical dimension fluctuation value is obtained;

[0037] Calculating a critical dimension difference between the actual critical dimension value and the target critical dimension value;

[0038] Based on the critical dimension difference and the critical dimension fluctuation value, a wafer operation process of the target batch is determined.

[0039] In a fourth aspect, the present application further provides a computer-readable storage medium having a computer program stored thereon, wherein when the computer program is executed by a processor, the following steps are implemented:

[0040] Obtaining the corresponding relationship between the chuck temperature and the critical dimension of the wafer and the temperature adjustment range of the chuck temperature during the etching process;

[0041] Obtaining actual critical dimensions of a previous batch of wafers after etching and their corresponding target critical dimensions, wherein the previous batch of wafers is wafers processed before the target batch;

[0042] According to the corresponding relationship and the temperature adjustment amplitude, a critical dimension fluctuation value is obtained;

[0043] Calculating a critical dimension difference between the actual critical dimension value and the target critical dimension value;

[0044] Based on the critical dimension difference and the critical dimension fluctuation value, a wafer operation process of the target batch is determined.

[0045] In a fifth aspect, the present application also provides a wafer etching system, comprising:

[0046] A chuck for placing the wafer;

[0047] A control device is connected to the chuck and executes a control method for a wafer etching system as provided in any of the aforementioned embodiments.

[0048] The control method, device, computer equipment and system of the wafer etching system of this specification have the following unexpected beneficial effects: First, the present application can quickly determine whether the wafers of the target batch (later batch) are operating normally by obtaining the actual critical dimensions of the previous batch of wafers after etching, the chuck temperature of the etching process, and the target critical dimensions. When it is determined that the wafers of the target batch can work normally, the present application can improve the accuracy of the critical dimensions of the wafers of the target batch. Alternatively, when it is determined that the wafers of the target batch cannot work normally, the present application can promptly prevent the wafers of the target batch from being shipped. Secondly, in some embodiments of the present application, it is also possible to divide the chuck into multiple areas to accurately determine whether the chuck in each area is suitable for continued operation. In the case where the chuck in some areas is not suitable for continued operation, the chuck area that needs to be adjusted can also be quickly and accurately determined. BRIEF DESCRIPTION OF THE DRAWINGS

[0049] In order to more clearly illustrate the technical solutions in the embodiments of the present disclosure or the conventional technology, the drawings required for use in the embodiments or the conventional technology descriptions will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present disclosure, and for ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0050] Figure 1 is a flow chart of a control method of a wafer etching system provided in an embodiment;

[0051] Figure 2 A flowchart of a control method for a wafer etching system provided in another embodiment;

[0052] Figure 3 A schematic diagram of a chuck provided in an embodiment;

[0053] Figure 4 A schematic diagram of a corresponding relationship provided in an embodiment;

[0054] Figure 5Schematic diagram of a control device for a wafer etching system provided in one embodiment.

[0055] Explanation of reference numerals: chuck - 100; innermost ring - 110; outermost ring - 120.

[0056] In order to better describe and illustrate the embodiments and / or examples of the inventions disclosed herein, reference may be made to one or more drawings. The additional details or examples used to describe the drawings should not be considered as limiting the scope of any of the disclosed inventions, the embodiments and / or examples currently described, and the best modes of these inventions currently understood. DETAILED DESCRIPTION

[0057] In order to facilitate understanding of the present disclosure, the present disclosure will be described more fully below with reference to the relevant drawings. The preferred embodiments of the present disclosure are shown in the drawings. However, the present disclosure can be implemented in many different forms and is not limited to the embodiments described herein. On the contrary, the purpose of providing these embodiments is to make the disclosure of the present disclosure more thorough and comprehensive.

[0058] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by those skilled in the art to which the present disclosure belongs. The terms used herein in the specification of the present disclosure are only for the purpose of describing specific embodiments and are not intended to limit the present disclosure.

[0059] In each embodiment, unless otherwise clearly specified and limited, the terms "installed", "connected", "connected", "fixed" and the like should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements, unless otherwise clearly defined. For ordinary technicians in this field, the specific meanings of the above terms in each embodiment can be understood according to the specific situation.

[0060] Spatial relationship terms such as "under", "below", "below", "under", "above", "above", etc., may be used herein to describe the relationship between an element or feature shown in the figures and other elements or features. It should be understood that in addition to the orientations shown in the figures, spatial relationship terms also include different orientations of the device in use and operation. For example, if the device in the accompanying drawings is turned over, the element or feature described as "under other elements" or "under it" or "under it" will be oriented as "on" other elements or features. Therefore, the exemplary terms "under" and "under" may include both upper and lower orientations. In addition, the device may also include additional orientations (e.g., rotated 90 degrees or other orientations), and the spatial descriptors used herein are interpreted accordingly.

[0061] When used herein, the singular forms "a", "an", and "said / the" may also include plural forms, unless the context clearly indicates otherwise. It should also be understood that when the terms "consisting of" and / or "comprising" are used in this specification, the presence of the features, integers, steps, operations, elements and / or parts can be determined, but the presence or addition of one or more other features, integers, steps, operations, elements, parts and / or groups is not excluded. At the same time, when used herein, the term "and / or" includes any and all combinations of the relevant listed items.

[0062] This embodiment provides a wafer etching system. Figure 1 and Figure 2 , the control method of the wafer etching system can be applied to the wafer etching system. Figure 3 , the wafer etching system may include at least a chuck 100 and a control device. The control device of the wafer etching system may include an advanced process control system (Advanced Process Control, APC) and the like. The chuck 100 of the wafer etching system may be located in a process chamber. The chuck 100 may be used to carry a wafer. As an example, the process chamber may perform plasma etching on the chuck 100. The chuck 100 may have a temperature control unit, which may heat the chuck 100, thereby increasing or decreasing the temperature of the wafer. As an example, the chuck 100 may include an electrostatic chuck 100 (Electrostatic Chucks, ESC) and the like. Furthermore, the temperature control unit may also monitor the temperature of the chuck 100 in real time, and when the temperature of the chuck 100 is abnormal, an alarm and self-protection mechanism (for example, locking the wafer etching system, etc.) may be activated.

[0063] The etching process of the wafer may include multiple steps, and the temperature of the chuck 100 in each step may be different. Specifically, the control device of the wafer etching system may be provided with a master-slave control step. The master control step (Process) may be the temperature required for the wafer in a certain etching process step. The slave control step (Stable) may be the specific set temperature of the chuck in the etching process step. The temperature adjustment amplitude of the slave control step and the master control step may be consistent. Of course, the temperature adjustment amplitude of the slave control step and the master control step may also be inconsistent. The temperature of the chuck 100 may be different in different steps. For example, in the first process step, the temperature of the chuck 100 is set to 50°C. At this time, the temperature of the chuck 100 needs to be increased from 0°C to 50°C. In the second process step, the temperature of the chuck 100 is set to 60°C. At this time, the temperature of the chuck 100 needs to be increased from 50°C to 60°C. The above data are only for exemplary description. In actual embodiments, the temperature of the chuck 100 and the amount of change are not limited to the above data. Parameters such as the temperature adjustment amount of each master-slave adjustment step, the single adjustment value, and the specification of the temperature difference between the master-slave adjustment steps can be preset in the control device of the wafer etching system.

[0064] See also Figure 1 and Figure 2 This embodiment also provides a control method for a wafer etching system, which can be applied to a wafer etching system. For example, a control device of a wafer etching system can execute the control method for a wafer etching system in this embodiment. The control method for a wafer etching system includes the following steps:

[0065] Step S100: obtaining the corresponding relationship between the temperature of the chuck 100 and the critical dimension of the wafer and the temperature adjustment range of the chuck 100 during the etching process.

[0066] Step S200: obtaining the actual critical dimensions of the previous batch of wafers after etching and their corresponding target critical dimensions, where the previous batch of wafers are wafers processed in the target batch.

[0067] Step S300: Obtain the critical dimension fluctuation value according to the corresponding relationship and the temperature adjustment range.

[0068] Step S400: Calculating a critical dimension difference between an actual critical dimension value and a target critical dimension value.

[0069] Step S500: Determine the wafer operation flow of the target batch based on the critical dimension difference and the critical dimension fluctuation.

[0070] In step S100, after the previous batch of wafers is etched, the surface of the wafer may have grooves. The critical dimension of the wafer may be the width of the wafer groove, etc. There is a corresponding relationship between the temperature of the chuck 100 and the critical dimension of the wafer. The corresponding relationship may be pre-stored in the control device of the wafer etching system. As an example, refer to Figure 4 There may be a linear relationship between the temperature of the chuck 100 and the critical dimension of the wafer. Specifically, the linear relationship may be CD=0.4032T+29.134, where CD is the critical dimension of the wafer and T is the temperature of the chuck 100. It is understood that the above linear relationship is only for exemplary purposes.

[0071] The wafer has an actual critical dimension after etching and a corresponding target critical dimension. The target critical dimension is the critical dimension to be obtained, and the actual critical dimension is the measured critical dimension. The actual critical dimension may be consistent with the target critical dimension, or the actual critical dimension may differ from the target critical dimension.

[0072] The temperature adjustment range of the temperature of the chuck 100 may be a reasonable fluctuation range of the temperature of the chuck 100. As an example, the required temperature of the chuck 100 may be 50°C, and the temperature adjustment range of the temperature of the chuck 100 may be 49°C-51°C. Of course, the temperature adjustment range of the temperature of the chuck 100 may also be 49.5°C-50.5°C. This embodiment does not impose specific restrictions on the temperature adjustment range. For example, the required temperature of the chuck 100 may be 50°C, and the temperature adjustment range of the temperature of the chuck 100 may be 48°C-55°C, etc.

[0073] In step S200, the wafer etching system can etch multiple batches of wafers. The next batch of wafers to be etched may be the wafers of the target batch, and the wafers in the previous batch may be the wafers processed in the batch before the target batch. It can be understood that the wafers in the previous batch are the wafers that have completed the etching process, and the wafers in the target batch are the wafers that have not undergone the etching process.

[0074] The actual critical dimensions of the previous batch of wafers are measured. This embodiment does not limit the specific method for obtaining the actual critical dimensions, nor does it limit the specific location of the actual critical dimensions on the wafer. Accordingly, while measuring the actual critical dimensions of the previous batch of wafers, the temperature of the chuck 100 during the etching process can also be obtained. As an example, the temperature of the chuck 100 can be a set temperature of the chuck 100.

[0075] In step S300, the temperature adjustment amplitude is substituted into the corresponding relationship to obtain the critical dimension fluctuation value. The critical dimension fluctuation value may be a reasonable fluctuation range value of the critical dimension of the wafer under the temperature adjustment amplitude of the chuck 100. As an example, the required chuck 100 temperature may be 50°C, and the temperature adjustment amplitude of the chuck 100 temperature may be 49°C-51°C, then the upper temperature limit may be 51°C, and the lower temperature limit may be 49°C. It can be understood that at this time, the temperature (△t) at which the chuck 100 temperature can float may be 1°C. In the case where the corresponding relationship is a linear relationship, the product result of △t and the slope (k) of the linear relationship may be calculated, and the product result may be the critical dimension fluctuation value.

[0076] In step S400 , a critical dimension difference between an actual critical dimension value and a target critical dimension value may be calculated.

[0077] In step S500, the wafer operation process of the target batch can be determined based on the critical dimension difference and the critical dimension fluctuation value. In one possible example, when the critical dimension difference is less than or equal to the critical dimension fluctuation value, the wafer of the target batch is operated. In another possible example, when the critical dimension difference is greater than the critical dimension fluctuation value, the wafer etching system can be locked and the wafers of the target batch (later batch) can be prevented from being unloaded. After that, the temperature control unit of the chuck 100 can be adjusted based on the critical dimension difference. For example, the temperature control unit of the chuck 100 can be adjusted by adjusting the set temperature of the etching process in the control device of the wafer etching system, so that the temperature control unit of the chuck 100 is heated or cooled in the etching process. Alternatively, it can also be confirmed whether the temperature control unit, machine and other equipment of the chuck 100 are abnormal. After confirming that the temperature control unit or other equipment of the chuck 100 is correct, the wafer unloading of the target batch is controlled.

[0078] In this embodiment, by obtaining the actual critical dimensions of the previous batch of wafers after etching, the chuck 100 temperature during the etching process, and the target critical dimensions, it is determined whether the wafers of the target batch (the next batch) are operating normally, thereby improving the accuracy of the critical dimensions of the target batch of wafers.

[0079] In one embodiment, the chuck 100 has a plurality of regions. As an example, the plurality of regions of the chuck 100 may be distributed in concentric circles, or the plurality of regions of the chuck 100 may be distributed in a matrix. Accordingly, step S100 includes:

[0080] Step S110: Obtain the corresponding relationship of each area.

[0081] Step S300 includes:

[0082] Step S330: Determine the target area of ​​the actual critical dimension value on the wafer.

[0083] Step S340: acquiring the critical dimension fluctuation value of the target area according to the corresponding relationship of the target area and the temperature of the chuck 100 .

[0084] In step S110, each region may have a corresponding relationship, and each corresponding relationship may be obtained in advance through experiments.

[0085] In step S330 to step S340, the coordinates of the actual critical dimension value on the wafer can be obtained first, and then the target area of ​​the actual critical dimension value on the wafer can be obtained through the coordinates. As an example, the actual critical dimension value can be in the innermost circle 110 or the outermost circle 120 of the wafer. Afterwards, the critical dimension fluctuation value of the target area is obtained through the correspondence between the target area and the temperature of the chuck 100. It can be understood that the chuck 100 has multiple areas, and the present embodiment can obtain the actual critical dimension value in each area, and determine whether the actual critical dimension value in each area meets the critical dimension fluctuation value, and finally determine whether the entire chuck 100 is suitable for continuing the operation.

[0086] In this embodiment, the chuck 100 is divided into multiple areas, so as to accurately determine whether the chuck 100 in each area is suitable for continued operation. In the case that the chuck 100 in some areas is not suitable for continued operation, the area of ​​the chuck 100 that needs to be adjusted can also be quickly and accurately determined.

[0087] In one embodiment, the temperature adjustment range includes an upper temperature limit and a lower temperature limit.

[0088] Accordingly, step S300 includes:

[0089] Step S310: Calculate the upper limit of the critical dimension based on the corresponding relationship and the upper limit of the temperature.

[0090] Step S320: Calculate the lower limit value of the critical dimension based on the corresponding relationship and the lower limit value of the temperature.

[0091] Step S330: Based on the upper limit value of the critical dimension and the lower limit value of the critical dimension, obtain the critical dimension fluctuation value.

[0092] In step S310 to step S330, as an example, the required temperature of the chuck 100 may be 50°C, and the temperature adjustment range of the chuck 100 temperature may be 49°C-51°C, then the upper temperature limit may be 51°C, and the lower temperature limit may be 49°C. In the case where the corresponding relationship is a nonlinear relationship, 49°C, 50°C, and 51°C may be respectively substituted into the corresponding relationship to obtain the first result, the second result, and the third result. The first result may be the lower limit value of the critical dimension, and the third result may be the upper limit value of the critical dimension. Afterwards, the difference between the first result and the second result, and the difference between the third result and the second result may be used as the critical dimension fluctuation value.

[0093] In this embodiment, by setting the temperature adjustment amplitude of the chuck 100 temperature, a reasonable fluctuation range of the critical dimension of the wafer is provided. The critical dimension of the wafer within the reasonable fluctuation range can be considered to meet the process requirements. Moreover, this embodiment does not limit the specific form of the corresponding relationship. When the corresponding relationship is a linear relationship or a nonlinear relationship, this embodiment can calculate the critical dimension fluctuation value.

[0094] It should be understood that although Figure 1 and Figure 2 The steps in the flowchart are shown in sequence as indicated by the arrows, but these steps are not necessarily executed in the order indicated by the arrows. Unless otherwise specified in this document, there is no strict order restriction for the execution of these steps, and these steps can be executed in other orders. Moreover, Figure 1 and Figure 2 At least part of the steps may include multiple steps or multiple stages. These steps or stages are not necessarily performed at the same time, but can be performed at different times. The execution order of these steps or stages is not necessarily sequential, but can be performed in turn or alternately with other steps or at least part of the steps or stages in other steps.

[0095] Based on the same inventive concept, the embodiment of the present application also provides a control device for a wafer etching system for implementing the control method of the wafer etching system involved above. The implementation scheme for solving the problem provided by the device is similar to the implementation scheme recorded in the above method, so the specific limitations in the embodiments of the control device for one or more wafer etching systems provided below can refer to the limitations of the control method for the wafer etching system above, and will not be repeated here.

[0096] In an exemplary embodiment, Figure 5 As shown, a control device for a wafer etching system is provided, comprising: a first acquisition module, a second acquisition module, a third acquisition module, a calculation module and a determination module, wherein:

[0097] The first acquisition module is used to acquire the corresponding relationship between the temperature of the chuck 100 and the critical dimension of the wafer and the temperature adjustment range of the chuck 100 during the etching process.

[0098] The second acquisition module is used to acquire the actual critical dimensions of the previous batch of wafers after etching and their corresponding target critical dimensions, where the previous batch of wafers is wafers processed before the target batch.

[0099] The third acquisition module is used to acquire the key dimension fluctuation value according to the corresponding relationship and the temperature adjustment amplitude.

[0100] The calculation module is used to calculate the key dimension difference between the actual key dimension value and the target key dimension value.

[0101] The determination module is used to determine the wafer operation process of the target batch based on the critical dimension difference and the critical dimension fluctuation value.

[0102] In one embodiment, the determination module is further configured to lock the wafer etching system when the critical dimension difference is greater than the critical dimension fluctuation value.

[0103] In one embodiment, the determination module is further configured to adjust a temperature control unit of the chuck 100 based on the critical dimension difference.

[0104] In one embodiment, the determination module is further configured to operate on the target batch of wafers when the critical dimension difference is less than or equal to the critical dimension fluctuation value.

[0105] In one embodiment, the chuck 100 has multiple areas, and the first acquisition module is also used to acquire the correspondence between each area. The third acquisition module is also used to determine the target area of ​​the actual critical dimension value on the wafer; according to the correspondence between the target area and the temperature adjustment range, the critical dimension fluctuation value of the target area is acquired.

[0106] In one embodiment, the temperature adjustment range includes an upper temperature limit value and a lower temperature limit value, and the third acquisition module is also used to calculate the upper limit value of the key dimension based on the corresponding relationship and the upper temperature limit value; calculate the lower limit value of the key dimension based on the corresponding relationship and the lower temperature limit value; and obtain the key dimension fluctuation value based on the upper temperature limit value and the lower temperature limit value.

[0107] Each module in the control device of the above-mentioned wafer etching system can be implemented in whole or in part by software, hardware and a combination thereof. Each of the above-mentioned modules can be embedded in or independent of the processor in the computer device in the form of hardware, or can be stored in the memory in the computer device in the form of software, so that the processor can call and execute the operations corresponding to each of the above modules.

[0108] In an exemplary embodiment, a computer device is provided, which may be a server. The computer device includes a processor, a memory, an input / output interface (Input / Output, referred to as I / O) and a communication interface. The processor, the memory and the input / output interface are connected via a system bus, and the communication interface is connected to the system bus via the input / output interface. The processor of the computer device is used to provide computing and control capabilities. The memory of the computer device includes a non-volatile storage medium and an internal memory. The non-volatile storage medium stores an operating system, a computer program and a database. The internal memory provides an environment for the operation of the operating system and the computer program in the non-volatile storage medium. The database of the computer device is used to store control data of a wafer etching system. The input / output interface of the computer device is used to exchange information between the processor and an external device. The communication interface of the computer device is used to communicate with an external terminal via a network connection. When the computer program is executed by the processor, a control method for a wafer etching system is implemented.

[0109] In an exemplary embodiment, a computer device is provided, including a memory and a processor, wherein a computer program is stored in the memory, and when the processor executes the computer program, the steps provided in one or more of the above embodiments are implemented.

[0110] In one embodiment, a computer-readable storage medium is provided, on which a computer program is stored. When the computer program is executed by a processor, the steps provided in one or more of the above embodiments are implemented.

[0111] In one embodiment, a computer program product is provided, including a computer program, which implements the steps provided in one or more of the above embodiments when executed by a processor.

[0112] A person of ordinary skill in the art can understand that all or part of the processes in the above-mentioned embodiment method can be completed by instructing the relevant hardware through a computer program, and the computer program can be stored in a non-volatile computer-readable storage medium. When the computer program is executed, it can include the processes of the embodiments of the above-mentioned methods. Among them, any reference to the memory, database or other medium used in the embodiments provided in the present application can include at least one of non-volatile memory and volatile memory. Non-volatile memory can include read-only memory (ROM), magnetic tape, floppy disk, flash memory, optical memory, high-density embedded non-volatile memory, resistive random access memory (ReRAM), magnetic random access memory (MRAM), ferroelectric random access memory (FRAM), phase change memory (PCM), graphene memory, etc. Volatile memory can include random access memory (RAM) or external cache memory, etc. As an illustration and not limitation, RAM can be in various forms, such as static random access memory (SRAM) or dynamic random access memory (DRAM). The database involved in each embodiment provided in this application may include at least one of a relational database and a non-relational database. Non-relational databases may include distributed databases based on blockchains, etc., but are not limited to this. The processor involved in each embodiment provided in this application may be a general-purpose processor, a central processing unit, a graphics processor, a digital signal processor, a programmable logic device, a data processing logic device based on quantum computing, an artificial intelligence (AI) processor, etc., but are not limited to this.

[0113] In the description of this specification, the description with reference to the terms "some embodiments", "other embodiments", "ideal embodiments", etc. means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic descriptions of the above terms do not necessarily refer to the same embodiment or example. In addition, these specific features, structures or characteristics can be combined in one or more embodiments in any suitable manner. It should be understood that "this embodiment" or "one embodiment" mentioned throughout the specification means that the specific features, structures or characteristics related to the embodiment are included in at least one embodiment of the present disclosure. Therefore, "in one embodiment" or "in an embodiment" appearing throughout the specification may not necessarily refer to the same embodiment.

[0114] The technical features of the above-described embodiments may be arbitrarily combined. To make the description concise, not all possible combinations of the technical features of the above-described embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0115] The embodiments described above only express several implementation methods of the present application, and the descriptions thereof are relatively specific and detailed, but they cannot be understood as limiting the scope of the patent application. It should be pointed out that, for a person of ordinary skill in the art, several variations and improvements can be made without departing from the concept of the present application, and these all fall within the scope of protection of the present application. Therefore, the scope of protection of the patent of the present application shall be subject to the attached claims. The above description is only a preferred implementation method of the present disclosure, and does not limit the scope of the patent of the present disclosure. All equivalent structural transformations made by using the contents of the present disclosure specification and drawings under the inventive concept of the present disclosure, or direct / indirect application in other related technical fields are included in the scope of protection of the patent of the present disclosure.

Claims

1. A control method for a wafer etching system, characterized in that: include: Obtaining the corresponding relationship between the chuck temperature and the critical dimension of the wafer and the temperature adjustment range of the chuck temperature during the etching process; Obtaining actual critical dimensions of a previous batch of wafers after etching and their corresponding target critical dimensions, wherein the previous batch of wafers is wafers processed before the target batch; According to the corresponding relationship and the temperature adjustment amplitude, a critical dimension fluctuation value is obtained; Calculating a critical dimension difference between the actual critical dimension value and the target critical dimension value; Based on the critical dimension difference and the critical dimension fluctuation value, a wafer operation process of the target batch is determined.

2. The control method of the wafer etching system according to claim 1, characterized in that: The step of determining the wafer operation flow of the target batch based on the critical dimension difference and the critical dimension fluctuation value comprises: When the critical dimension difference is greater than the critical dimension fluctuation value, the wafer etching system is locked.

3. The control method of the wafer etching system according to claim 2, characterized in that: When the critical dimension difference is greater than the critical dimension fluctuation value, after locking the wafer etching system, the method includes: Based on the critical dimension difference, a temperature control unit of the chuck is adjusted.

4. The control method of the wafer etching system according to claim 1, characterized in that: The step of determining the wafer operation flow of the target batch based on the critical dimension difference and the critical dimension fluctuation value comprises: When the critical dimension difference is less than or equal to the critical dimension fluctuation value, the operation is performed on the wafers of the target batch.

5. The control method of the wafer etching system according to claim 1, characterized in that: The chuck has multiple areas, and the step of obtaining the corresponding relationship between the chuck temperature and the critical dimension of the wafer includes: Obtaining the corresponding relationship of each area; The step of obtaining the critical dimension fluctuation value according to the corresponding relationship and the temperature adjustment amplitude includes: Determine a target area of ​​the actual critical dimension value on the wafer; The critical dimension fluctuation value of the target area is acquired according to the corresponding relationship of the target area and the temperature adjustment amplitude.

6. The control method of the wafer etching system according to claim 1, characterized in that: The temperature adjustment range includes an upper temperature limit and a lower temperature limit. The step of obtaining the corresponding relationship between the chuck temperature and the critical dimension of the wafer and the temperature adjustment range of the chuck temperature during the etching process includes: Based on the corresponding relationship and the upper temperature limit, calculating the upper limit of the critical dimension; Calculating a lower limit value of a critical dimension based on the corresponding relationship and the lower limit value of the temperature; Based on the upper limit value of the critical dimension and the lower limit value of the critical dimension, a critical dimension fluctuation value is obtained.

7. A control device for a wafer etching system, characterized in that: include: A first acquisition module is used to acquire the corresponding relationship between the chuck temperature and the critical dimension of the wafer and the temperature adjustment range of the chuck temperature during the etching process; A second acquisition module is used to acquire the actual critical dimensions of the previous batch of wafers after etching and the corresponding target critical dimensions thereof, wherein the previous batch of wafers is wafers processed before the target batch; A third acquisition module, used for acquiring a key dimension fluctuation value according to the corresponding relationship and the temperature adjustment amplitude; A calculation module, used for calculating a critical dimension difference between the actual critical dimension value and the target critical dimension value; A determination module is used to determine the wafer operation process of the target batch based on the critical dimension difference and the critical dimension fluctuation value.

8. A computer device comprising a memory and a processor, wherein the memory stores a computer program, wherein: When the processor executes the computer program, the steps of the method according to any one of claims 1 to 6 are implemented.

9. A computer-readable storage medium having a computer program stored thereon, characterized in that: When the computer program is executed by a processor, the steps of the method according to any one of claims 1 to 6 are implemented.

10. A wafer etching system, characterized in that: include: A chuck for placing the wafer; A control device is connected to the chuck and executes the control method of the wafer etching system as described in any one of claims 1-6.

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