Substrate processing apparatus

Abstract

The invention provides a substrate processing apparatus capable of adjusting gas supplied into a processing container. Provided is a substrate processing apparatus including: a processing container main body capable of accommodating a substrate holder that holds a substrate; a pipe branched from the processing container main body and extending in a horizontal direction on a side wall of the processing container main body; a temperature adjustment mechanism having a housing surrounding the piping and capable of adjusting the temperature of the piping; and an injector disposed in the piping.

Description

Technical Field

[0001] The present invention relates to a substrate processing device. Background Art

[0002] Patent document 1 discloses a vertical film-forming device, which includes: a reaction tube; a flange portion that supports the reaction tube from the downstream side; a gas injector that is inserted into the interior of the reaction tube from the flange portion and extends in the height direction within the reaction tube; and an exhaust port formed in the flange portion.

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Patent Application Publication No. 2012-169307 Summary of the invention

[0006] Technical problem to be solved by the invention

[0007] The present invention provides a substrate processing apparatus capable of adjusting gas supplied into a processing container.

[0008] Technical solutions for solving technical problems

[0009] According to one embodiment of the present invention, there is provided a substrate processing device, comprising: a processing container body capable of accommodating a substrate holding a substrate; a piping branched from the processing container body and extending in a horizontal direction along a side wall of the processing container body; a temperature regulating mechanism having a shell surrounding the piping and capable of regulating a temperature of the piping; and an injector disposed on the piping.

[0010] Effects of the Invention

[0011] According to one aspect, a substrate processing apparatus capable of adjusting gas supplied into a processing container can be provided. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] Figure 1 This is a longitudinal sectional view showing an example of the substrate processing apparatus according to the first embodiment.

[0013] Figure 2 It is a horizontal cross-sectional view showing an example of the substrate processing apparatus according to the first embodiment.

[0014] Figure 3 It is a perspective view showing an example of an injector.

[0015] Figure 4 It is a cross-sectional view showing a structural example of an injector and a temperature adjustment mechanism.

[0016] Figure 5It is a cross-sectional view showing a modified example of the injector and the temperature adjustment mechanism.

[0017] Figure 6 It is a longitudinal sectional view showing an example of a substrate processing apparatus according to the second embodiment.

[0018] Figure 7 It is a perspective view showing an example of a temperature adjustment mechanism.

[0019] Figure 8 It is a cross-sectional view showing a structural example of a temperature adjustment mechanism.

[0020] Fig. 9 It is a horizontal cross-sectional view showing another example of the substrate processing apparatus.

[0021] Description of Reference Numerals

[0022] 10. Processing container (reaction tube)

[0023] 11 Processing container body

[0024] 12 Gas supply chamber

[0025] 13, 16 piping

[0026] 14, 17 Flange

[0027] 30 Wafer boat (substrate holder)

[0028] 32 Cover

[0029] 33 Insulation

[0030] 34 Rotating mechanism

[0031] 35 Rotation axis

[0032] 41. Insulation components

[0033] 42 Heater

[0034] 50A, 50B Gas supply unit

[0035] 51 Gas supply source

[0036] 52 Flow regulation unit

[0037] 53 On / Off Valve

[0038] 54 Supply channel

[0039] 55, 65 Sealing parts

[0040] 70, 70A temperature adjustment mechanism

[0041] 71 Gas Heater

[0042] 80 Control Department

[0043] 100A, 100B substrate processing device

[0044] 200, 200A, 200A1 Injectors

[0045] 220A Circulation Department

[0046] 300 Temperature regulating mechanism

[0047] 320 Temperature regulating tube

[0048] W substrate. DETAILED DESCRIPTION

[0049] Hereinafter, the mode for implementing the present invention will be described with reference to the accompanying drawings. In each of the drawings, the same components are denoted by the same reference numerals, and duplicate descriptions may be omitted.

[0050] [Substrate processing device]

[0051] (Substrate Processing Apparatus According to First Embodiment)

[0052] use Figure 1 and Figure 2 A substrate processing apparatus 100A according to the first embodiment will be described. Figure 1 It is a longitudinal sectional view showing an example of the substrate processing apparatus 100A according to the first embodiment. Figure 2 1 is a horizontal cross-sectional view showing an example of a substrate processing apparatus 100A according to the first embodiment. Here, the substrate processing apparatus 100A is, for example, a film forming apparatus that forms a film on a substrate W such as a semiconductor wafer by an ALD (Atomic Layer Deposition) method by alternately supplying two or more processing gases.

[0053] The substrate processing apparatus 100A includes a cylindrical processing container (reaction tube) 10 with an open bottom and a top. The processing container 10 is entirely made of, for example, quartz.

[0054] The flange 20 formed into a cylindrical shape and made of metal is airtightly connected to the opening of the lower end of the processing container 10 via a sealing member (not shown) such as an O-ring. The flange 20 supports the lower end of the processing container 10.

[0055] A wafer boat (substrate holder) 30 on which a plurality of (e.g., 25 to 150) substrates W are placed in multiple layers is inserted into the processing container 10 from below the flange portion 20. In this way, a plurality of substrates W are stored substantially horizontally with intervals in the vertical direction in the processing container 10. The wafer boat 30 is made of, for example, quartz. The wafer boat 30 has three rods 31 ( Figure 1The plurality of substrates W are supported by grooves (not shown) formed in the rods 31 (two are shown in the figure).

[0056] A metal cover 32 is provided on the downstream side of the flange 20 to open and close the opening at the lower end of the flange 20. The cover 32 is configured to be able to be raised and lowered together with the wafer boat 30 by a lifting mechanism (not shown) such as a boat lifter (not shown). A sealing member (not shown) is provided between the peripheral portion of the cover 32 and the lower end of the flange 20 to maintain airtightness in the processing container 10.

[0057] A heat insulator 33 made of quartz is provided between the wafer boat 30 and the cover 32. The rotation mechanism 34 rotates the wafer boat 30 and the heat insulator 33 about a vertical axis via a rotation shaft 35. The rotation shaft 35 penetrates the cover 32 in an airtight manner, and connects the rotation mechanism 34 and the heat insulator 33.

[0058] Thus, the wafer boat 30 and the cover 32 are integrally raised and lowered by the lifting mechanism, and can be inserted into and removed from the processing container 10. In addition, the wafer boat 30 is rotated about the vertical axis by the rotating mechanism 34. The substrate W may be processed without rotating the wafer boat 30.

[0059] A cylindrical heat insulating component 41 and a heater 42 are provided around the processing container 10. The processing container 10, the flange portion 20, the heat insulating component 41 and the heater 42 are supported by a bottom plate 43 extending in the horizontal direction. The heater 42 is arranged on the inner circumferential surface of the cylindrical heat insulating component 41 which is open at the lower end and has a top. The heater 42 heats the processing container 10 under the action of radiant heat and heat convection. The heater 42 and the heat insulating component 41 are controlled so that the temperature of the processing container 10 becomes a desired temperature. As a result, the substrate W in the processing container 10 is heated by radiant heat from the wall surface of the processing container 10, etc. That is, the heater 42 heats the processing container 10 and the substrate W to a desired temperature.

[0060] In addition, the substrate processing apparatus 100A includes a gas supply unit 50A that supplies gas into the processing container 10 and a gas exhaust unit 60A that exhausts gas from the processing container 10 .

[0061] Here, the processing container 10 includes a processing container body 11 having a top and in a cylindrical shape, a pipe 13 , and a flange portion 14 .

[0062] The processing container body 11 is a cylindrical body with a top, into which the wafer boat 30 is inserted. One end of the side surface of the processing container body 11 serves as a gas supply chamber to which gas is supplied. The internal space of the gas supply chamber is a part of the internal space of the processing container body 11.

[0063] The pipe 13 branches from the processing container body 11 and extends in the horizontal direction (radial direction of the processing container body 11) at the side wall of the processing container body 11. The pipe 13 branches into a plurality of pipes in the height direction at the side wall of the processing container body 11. One end of the pipe 13 is connected to the processing container body 11 (gas supply chamber), and the other end extends to a position on the outer peripheral side of the heater 42. In addition, a flange portion 14 is provided at the other end of the pipe 13. A temperature adjustment mechanism 70 is provided on the outer side of the heat insulating member 41 between the pipe 13 and the flange portion 14.

[0064] The injector 200 ( 200A) is disposed in the processing container body 11 and the pipe 13. The gas supply unit 50A includes the pipe 13, the injector 200 ( 200A), the temperature adjustment mechanism 70, the gas supply source 51, the flow rate adjustment unit 52, the on-off valve 53, and the supply passage 54.

[0065] The gas supply source 51 supplies gas. The flow rate adjustment unit 52 is, for example, a mass flow controller, and adjusts the flow rate of the gas supplied by the gas supply source 51. The on-off valve 53 switches the supply of gas from the gas supply source 51 to the processing container 10 or stops the supply. The supply passage 54 connects the gas supply source 51 to the pipe 13, and the flow rate adjustment unit 52 and the on-off valve 53 are arranged in the middle. The supply passage 54 is connected to the pipe 13 outside the heater 42. The temperature adjustment mechanism 70 adjusts the temperature of the gas supplied to the pipe 13 by heating and / or cooling the pipe 13. The heater 42 may not be provided.

[0066] The connection between the supply passage 54 and the pipe 13 is airtightly connected via a sealing member 55 such as an O-ring made of fluorine rubber such as vinylidene fluoride rubber (FKM). The temperature control mechanism 70 is provided at least closer to the processing chamber body 11 than the sealing member 55.

[0067] The injector 200 (200A) is disposed over the processing container body 11 and the pipe 13. The injector 200 (200A) is supplied with gas from the supply passage 54, and releases the supplied gas into the processing container 10.

[0068] The gas exhaust unit 60A includes an exhaust pipe 25 provided on the side wall of the flange 20, a vacuum pump 61, a pressure regulator 62, and an exhaust passage 63. Thus, the gas in the processing container 10 is exhausted to the outside of the processing container 10 by the gas exhaust unit 60A. In addition, the pressure in the processing container 10 is controlled to a desired pressure by the pressure regulator 62.

[0069] In addition, the substrate processing apparatus 100A includes a control unit 80. The control unit 80 controls the operation of each unit of the substrate processing apparatus 100, for example. The control unit 80 may be, for example, a computer. In addition, a program of the computer that performs the operation of each unit of the substrate processing apparatus 100A is stored in a storage medium. The storage medium may be, for example, a floppy disk, an optical disk, a hard disk, a flash memory, a DVD, etc.

[0070] Figure 2 1 is a horizontal cross-sectional view showing an example of the arrangement of the pipes 13, the injectors 200 (200A) and the temperature control mechanism 70 of the substrate processing apparatus 100A. A plurality of pipes 13 are connected in the circumferential direction of the processing container body 11 and in the height direction of the processing container body 11 (the axial direction of the processing container body 11 and the inter-surface direction of the plurality of substrates W supported on the wafer boat 30). Figure 1 and Figure 2 In the illustrated example, three pipes 13 are illustrated in the circumferential direction, and two pipes 13 are illustrated in the height direction.

[0071] Moreover, the temperature adjustment mechanism 70 is provided on the outer peripheral side of the pipe 13, facing the outer side surface of the heat insulating member 41. The pipe 13 is attached with an injector 200A.

[0072] The temperature regulating mechanism 70 is disposed at a position closer to the outer peripheral side than the heater 42. In addition, the temperature regulating mechanism 70 is disposed outside the outer peripheral surface of the heat insulating component 41. In addition, it is not limited to this, and the temperature regulating mechanism 70 may also be a structure disposed to the inner side than the outer peripheral surface of the heat insulating component 41. The temperature regulating mechanism 70 heats and / or cools the piping 13. For example, by heating the piping 13, the flow section 220A of the injector 200A disposed in the piping 13 is heated by radiant heat or the like from the inner peripheral surface of the piping 13. In addition, the gas flowing in the injector 200A is heated by the heated flow section 220A.

[0073] use Figure 3 and Figure 4 An example of the injector 200 (200A) and the temperature adjustment mechanism 70 will be described. Figure 3 It is a perspective view showing an example of the injector 200A. Figure 4 It is a cross-sectional view showing a configuration example of the injector 200A and the temperature adjustment mechanism 70 .

[0074] like Figure 3As shown, the injector 200A has a release portion 210A, a circulation portion 220A, a supply portion 230A, and a flange portion 240A. The release portion 210A has an internal space through which gas can flow, and has a cylindrical shape with the upper and lower ends closed. When the injector 200A is installed in the substrate processing apparatus 100A, the release portion 210A is a pipe that is arranged in the processing container body 11 and extends in the height direction of the processing container 10.

[0075] The release portion 210A is provided with a plurality of gas release holes 211A communicating with the internal space. A plurality of gas release holes 211A are provided in the height direction (axial direction) of the processing container 10. In addition, the release portion 210A is described as being cylindrical, but is not limited thereto, and may be, for example, a cylindrical shape with an elliptical cross-sectional area, or a cylindrical shape with a polygonal cross-sectional area, etc.

[0076] The circulation part 220A is a pipe having an internal space through which gas can flow, one end of which is connected to the release part 210A so that gas can flow, and the other end of which is connected to the supply part 230A so that gas can flow. Figure 4 As shown, the flow section 220A is disposed in the pipe 13. In addition, the flow section 220A is shown as a cylindrical shape, but is not limited thereto, and may be, for example, a pipe with an elliptical cross-sectional area or a pipe with a polygonal cross-sectional area.

[0077] Here, the flow section 220A includes second portions 220A2 and 220A3 which are straight tubes and a first portion 220A1 located therebetween and having a cross-sectional area larger than that of the second portions 220A2 and 220A3. The supply section 230A is connected to the supply passage 54 and supplies gas from the supply passage 54.

[0078] The flange portion 240A is provided on the outer peripheral surface of the circulation portion 220A, and is formed to be substantially equal to (slightly smaller than) the inner diameter of the pipe 13. When the injector 200A is mounted on the substrate processing device 100A, the flange portion 240A is inserted into the pipe 13. Thus, the injector 200A is positioned. In addition, the flange portion 240A seals the space between the inner peripheral surface of the pipe 13 and the outer peripheral surface of the circulation portion 220A, and the space between the processing container body 11 and the internal space of the gas supply chamber. Thus, the high-temperature gas in the internal space of the processing container body 11 is prevented from flowing into the space between the inner peripheral surface of the pipe 13 and the outer peripheral surface of the circulation portion 220A. In other words, the gas flowing in the injector 200 is prevented from being heated by the high-temperature gas in the internal space of the processing container body 11. In addition, the space between the inner peripheral surface of the pipe 13 and the outer peripheral surface of the circulation portion 220A is connected to the internal space of the processing container body 11, thereby suppressing the influence on the processing of the substrate.

[0079] In this way, the gas supplied from the gas supply source 51 flows through the supply passage 54 in the order of the supply portion 230A, the flow portion 220A, and the release portion 210A, and is supplied into the processing container 10 from the gas release hole 211A.

[0080] right Figure 4 The details of the temperature control mechanism 70 shown in FIG. 2 are described. A plurality of thin tubes 221 are formed inside the first portion 220A1 of the flow section 220A. A gas heater 71 is wound around the outer circumference of the pipe 13 corresponding to the first portion 220A1. The gas heater 71 is formed of a metal such as tantalum. The gas heater 71 is an example of a heating mechanism.

[0081] The pipe 13 and the injector 200A are made of quartz. The pipe 13 can be heated to 1000° C. or less (eg, 800° C. to 900° C.) by heating with the gas heater 71 .

[0082] On the outer side of the heat insulating component 41, a cylindrical shell 72 is arranged in a manner covering the first part 220A1. A flow path 73 of a hot fluid is formed on the side wall of the cylindrical body of the shell 72. One end side of the cylindrical body of the shell 72 is open and is closed by the outer side of the heat insulating component 41. The other end side of the cylindrical body of the shell 72 has a bottom. The pipe 13 and the second part 220A3 pass through the through hole in the center of the bottom. A flow path 73 of a hot fluid is also formed at the bottom. The temperature of the hot fluid flowing in the flow path 73 can be cooled or heated to the temperature of the gas passing through the pipe 13. The hot fluid is, for example, water, and factory water can be used. The flow path 73 in the shell 72 is provided inside the shell 72, and is an example of a temperature regulating mechanism for regulating the temperature of the pipe 13, for example, a cooling mechanism. However, the flow path 73 can also function as a heating mechanism according to the temperature of the hot fluid. In addition, the flow path 73 is configured to prevent the heat inside the temperature regulating mechanism 70 from leaking to the outside. The shell 72 is formed of metal such as stainless steel and aluminum. In addition, the flow path 73 through which the heating fluid can flow may be connected to a cooler. By supplying a low-temperature refrigerant from the cooler to the flow path 73, the pipe 13 can be cooled.

[0083] The diameters of the first portion 220A1 and the flange portion 240A of the flow portion 220A are equal. The cross-sectional areas of the second portions 220A2 and 220A3 are equal. The cross-sectional area of ​​the first portion 220A1 is larger than the cross-sectional areas of the second portions 220A2 and 220A3. The cross-sectional areas of the pipe 13 on the periphery of the first portion 220A1 and the second portion 220A2 are equal. The cross-sectional area of ​​the pipe 13 on the periphery of the second portion 220A3 is smaller than the cross-sectional area of ​​the pipe 13 on the periphery of the first portion 220A1 and the second portion 220A2.

[0084] A plurality of thin tubes 221 are horizontally arranged inside the first portion 220A1 of the circulation section 220A. The quartz forming the first portion 220A1 is heated by the gas heater 71 via the quartz forming the pipe 13. By bringing the gas into contact with the plurality of thin tubes 221 of the heated first portion 220A1, heat can be transferred to the gas passing through the first portion 220A1.

[0085] Therefore, the circulation section 220A is formed with a plurality of thin tubes 221 in the first portion 220A1 in the piping 13 around which the gas heater 71 is wound, so as to increase the surface area in contact with the gas. However, the structure of the first portion 220A1 is not limited to the thin tubes 221 as long as it has a structure that increases the contact area with the gas passing through the first portion 220A1. For example, a spiral-shaped tube may be formed in the first portion 220A1. The thin tubes 221 in the first portion 220A1 may be formed obliquely instead of being formed straight in the horizontal direction.

[0086] A throttle hole 74 is provided at the gas inlet at the end of the first part 220A1 on the second part 220A3 side. The throttle hole 74 is provided so as to generate a pressure difference between the upstream side (second part 220A3 side) and the downstream side of the throttle hole 74. The upstream side of the throttle hole 74 is about atmospheric pressure. The downstream side of the throttle hole 74 is depressurized to the same level as the processing container body 11.

[0087] In the substrate processing apparatus 100A of this embodiment, the pressure drop is the largest near the outlet of the release portion 210A of the injector 200A, and the temperature of the gas decreases due to adiabatic expansion. Therefore, even if the temperature of the gas passing through the first portion 220A1 is adjusted by the gas heater 71, the temperature of the gas decreases near the outlet of the injector 200A, and the temperature controllability of the gas decreases.

[0088] Therefore, a throttle hole 74 is provided on the upstream side of the first portion 220A1, and the pressure loss of the throttle hole 74 is used to reduce the pressure in the plurality of capillaries 221 on the downstream side of the throttle hole 74, thereby suppressing the pressure drop at the outlet of the injector 200A. That is, after the pressure in the first portion 220A1 is made close to the pressure of the processing container body 11 by the pressure loss of the throttle hole 74, the gas is heated in the first portion 220A1. Thus, it is possible to suppress the rapid temperature drop of the gas caused by adiabatic expansion near the outlet of the injector 200A, and improve the temperature controllability of the gas controlled by the gas heater 71.

[0089] In addition, by arranging the pipe 13 in a horizontal direction from the side, it is possible to reduce the heating of the gas in the injector 200 by the heat from the processing container body 11. In addition, the cross-sectional area of ​​the second portion 220A2 is smaller than the cross-sectional area of ​​the first portion 220A1. Thus, the gas supplied from the supply portion 230A can increase the flow rate of the gas in the second portion 220A2 and be quickly supplied to the release portion 210A. Therefore, the gas can be quickly supplied into the processing container body 11 while maintaining the temperature of the gas controlled by the gas heater 71. Thus, the temperature controllability of the gas released from the gas release hole 211A is improved.

[0090] A temperature sensor (not shown) for detecting the temperature of the circulation section 220A may be provided in the circulation section 220A. The temperature sensor (not shown) is preferably provided on the downstream side of the gas heater 71. The control section 80 may also estimate the temperature of the gas supplied from the gas release hole 211A of the release section 210A to the processing container 10 based on the detection value of the temperature sensor of the circulation section 220A.

[0091] The same gas may be supplied to a plurality of pipes 13 arranged in the height direction of the processing container body 11. On the other hand, different gases may be supplied to the pipes 13 arranged in the circumferential direction of the processing container body 11, respectively.

[0092] For example, the following process is taken as an example: a step of supplying a precursor gas adsorbed on the surface of a substrate W to a process container 10; a step of supplying a purge gas to purge the precursor gas from the process container 10; a step of supplying a reaction gas (such as an oxidizing gas, a nitriding gas, etc.) that reacts with the precursor adsorbed on the surface of the substrate W to the process container 10; and a step of supplying a purge gas to purge the reaction gas from the process container 10. These steps are regarded as a cycle, and a film is formed on the substrate W by ALD processing by repeating the cycle.

[0093] For example, Figure 2 The precursor gas is supplied to the pipe 13 on the right side of the circumference shown. The reaction gas is supplied to the pipe 13 on the left side of the circumference. The purge gas is supplied to the pipe 13 in the center of the circumference. The pipe 13 is provided with a temperature control mechanism 70 .

[0094] According to such a structure, by controlling the heater 42 and the temperature adjustment mechanism 70 respectively, the temperature of the processing container body 11 heated by the heater 42, the temperature of the precursor gas supplied from the injector 200A to the processing container 10, the temperature of the reaction gas supplied from the injector 200A to the processing container 10, and the temperature of the purge gas supplied from the injector 200A can be made different. That is, the temperature of the gas supplied to the processing container 10 can be controlled according to the type of gas.

[0095] Thus, for example, the precursor gas can be supplied to the processing container 10 at a temperature at which the precursor gas is appropriately adsorbed on the surface of the substrate W. In addition, the reaction gas can be supplied to the processing container 10 at a temperature at which the reaction gas appropriately reacts with the precursor adsorbed on the surface of the substrate W. In addition, by supplying the purge gas, for example, the substrate W can be cooled.

[0096] In addition, a temperature regulating mechanism 70 is provided at a position downstream of the sealing component 55, and is capable of heating the gas at a position downstream of the sealing component 55, thereby protecting the sealing component 55 and setting the gas to a desired temperature in advance without depending on the temperature of the processing container body 11 before supplying it to the processing container body 11.

[0097] Since the main heater 42 is controlled to the same temperature, in the temperature control using only the heater 42, during the process, the film thickness of the film on the upper substrate W of the wafer boat 30 is greater than the film thickness of the film on the lower substrate W. In this case, as an example, the temperature of the gas supplied from the lower injector 200A to the processing container 10 is increased, and the temperature of the gas supplied from the upper injector 200A to the processing container 10 is decreased. In this way, the film thickness of the upper and lower substrates W of the wafer boat 30 can be made the same. However, the temperature control of each injector 200A arranged in the height direction is not limited to this.

[0098] Alternatively, the injector 200A may be cooled in the first portion 220A1 by circulating a cooling medium as an example of a hot fluid through the flow path 73, so that the gas is supplied to the processing container 10 in a state where the gas activity is low. For example, by cooling a gas that is easily decomposed at high temperature using a cooling medium, the gas can be supplied to the processing container 10 in a state where the gas is not excessively decomposed. Examples of the gas that is to be cooled to reduce the activity include O 3 On the other hand, the injector 200A may be heated in the first part 220A1 by the gas heater 71 to supply the gas to the processing container 10 in a state where the gas is fully activated. For example, as the gas to be heated and activated, ammonia, H 2 Gas, etc.

[0099] In addition, the flow rate and / or temperature of the gas can be controlled in the height direction by supplying one gas into the processing container 10 from a plurality of pipes 13. That is, the flow rate and / or temperature of the gas can be controlled for each zone in the height direction.

[0100] In addition, the substrate processing apparatus 100A is configured to be replaceable (detachable) of the injector 200 (200A). Thus, for example, by replacing the injector 200 with a different number, size, and arrangement of the gas release holes 211A, the shape of the gas supply portion 50A can be changed. The injector 200 (200A) can also be L-shaped. The release portion 210A of the injector 200 (200A) can also stand on the upper side.

[0101] According to the substrate processing apparatus 100A of the first embodiment, it is possible to adjust the gas supplied to the processing container 10 .

[0102] That is, a plurality of zones are formed in the height direction of the processing container 10. In addition, the injectors 200 correspond to the zones respectively. Figure 1 As shown, the flow rate of the gas supplied to each pipe 13 in the height direction can be individually controlled by the flow regulator 52. Thus, the flow rate of the gas supplied to each of the multiple regions can be controlled. In addition, the injector 200 is detachable. By replacing the injector 200 with a different shape, the flow rate of the gas supplied to each of the multiple regions can also be controlled.

[0103] Furthermore, according to the substrate processing apparatus 100A of the first embodiment, the temperature of the supplied gas can be individually controlled by individually controlling the gas heaters 71 provided corresponding to the respective pipes 13 in the height direction. Thus, the temperature of the gas supplied to each of the plurality of regions can be controlled.

[0104] According to the substrate processing apparatus 100A of the first embodiment, the flow rate and temperature of the supplied gas can be controlled for each type of gas and further for each area.

[0105] Therefore, the gas supplied from the gas release hole 211A into the processing container 10 passes between the substrates W supported by the wafer boat 30 and is exhausted to the outside of the processing container 10 through the exhaust pipe 25. Thus, the uniformity of the flow rate and temperature of the gas supplied by the side stream can be improved, and the uniformity of substrate processing can be improved.

[0106] (Modification of Injector and Temperature Adjustment Mechanism)

[0107] Reference Figure 5 , a modification example of the injector 200 (200A1) and the temperature adjustment mechanism 70A is described. Figure 5 It is a cross-sectional view showing a modified example of the injector 200 (200A1) and the temperature adjustment mechanism 70A.

[0108] Figure 5 The shape of the injector 200 (200A1) shown is similar to Figure 3The injectors 200 (200A) shown are the same, so the description is omitted.

[0109] Figure 5 The basic structure of the injector 200 (200A1) shown is similar to Figure 4 The basic structure of the injector 200 (200A) shown is the same. Figure 5 In the illustrated injector 200 ( 200A1 ), the interior of the first portion 220A1 of the flow portion 220A serves as a plasma generation space.

[0110] In addition, the temperature adjustment mechanism 70A includes an induction coil 76 wound around the pipe 13 of the first portion 220A1. High-frequency electric power is supplied to the induction coil 76 from a high-frequency power supply 77. Thus, the gas flowing through the flow section 220A is converted into plasma by the high-frequency electric power while passing through the first portion 220A1. Thus, plasma can be generated from the gas supplied into the first portion 220A1.

[0111] According to the injector 200 (200A1) and the temperature adjustment mechanism 70A of this modified example, it is possible to obtain Figure 4 The injector 200 (200A) shown in the figure has the same effect as the temperature control mechanism 70. In addition, in this modification, after the activity of the gas is increased by plasma in the first portion 220A1, the gas can be supplied to the processing container body 11 in a further decomposed state.

[0112] (Substrate Processing Apparatus 100B of Second Embodiment)

[0113] use Figure 6 to Figure 8 , a substrate processing apparatus 100B according to a second embodiment will be described. Figure 6 It is a longitudinal sectional view showing an example of a substrate processing apparatus 100B according to the second embodiment. Figure 7 It is a perspective view showing an example of the temperature adjustment mechanism 300 . Figure 8 2 is a cross-sectional view showing a configuration example of the temperature adjustment mechanism 300. Here, the substrate processing apparatus 100B is, for example, a film forming apparatus that alternately supplies two or more processing gases and forms a film on a substrate W by an ALD method.

[0114] The substrate processing apparatus 100B includes a cylindrical processing container (reaction tube) 10 which is open at the bottom and has a ceiling. The processing container 10 is entirely made of, for example, quartz.

[0115] The lower end opening of the processing container 10 is airtightly connected to a cylindrical metal flange 20 via a sealing member such as an O-ring (not shown).

[0116] A wafer boat (substrate holder) 30 on which a plurality of (e.g., 25 to 150) substrates W are placed in multiple layers is inserted into the processing container 10 from below the flange portion 20. In this way, a plurality of substrates W are stored substantially horizontally with intervals in the vertical direction in the processing container 10. The wafer boat 30 is made of, for example, quartz. The wafer boat 30 has three rods 31 ( Figure 7 The plurality of substrates W are supported by grooves (not shown) formed in the rods 31 (two are shown in the figure).

[0117] A metal cover 32 is provided on the downstream side of the flange 20 to open and close the opening at the lower end of the flange 20. The cover 32 is configured to be able to be raised and lowered together with the wafer boat 30 by a lifting mechanism (not shown) such as a boat lifter (not shown). A sealing member (not shown) is provided between the peripheral portion of the cover 32 and the lower end of the flange 20 to maintain airtightness in the processing container 10.

[0118] A heat insulator 33 made of quartz is provided between the wafer boat 30 and the cover 32. The rotation mechanism 34 rotates the wafer boat 30 and the heat insulator 33 about a vertical axis via a rotation shaft 35. The rotation shaft 35 penetrates the cover 32 in an airtight manner, and connects the rotation mechanism 34 and the heat insulator 33.

[0119] Thus, the wafer boat 30 and the cover 32 are integrally raised and lowered by the lifting mechanism, and can be inserted into and removed from the processing container 10. In addition, the wafer boat 30 is rotated about the vertical axis by the rotating mechanism 34. The substrate W can also be processed without rotating the wafer boat 30.

[0120] A cylindrical heat insulating member 41 and a heater 42 are provided around the processing container 10. The processing container 10, the flange portion 20, the heat insulating member 41 and the heater 42 are supported by a bottom plate 43 extending in the horizontal direction. The heater 42 includes a cylindrical heat insulating member 41 with an opening at the bottom and a top, and a heater 42 arranged on the inner circumferential surface of the heat insulating member 41. The heater 42 heats the processing container 10 by using radiant heat and heat convection from the heater 42. The heater 42 is controlled so that the temperature of the processing container 10 becomes a desired temperature. As a result, the substrate W in the processing container 10 is heated by radiant heat from the wall of the processing container 10, etc. That is, the heater 42 heats the processing container 10 and the substrate W to a desired temperature.

[0121] In addition, the substrate processing apparatus 100B includes a gas supply unit 50B that supplies gas into the processing container 10 and a gas exhaust unit 60B that exhausts gas from the processing container 10 .

[0122] The gas supply unit 50B includes a gas supply source 51 , a flow rate adjustment unit 52 , an on-off valve 53 , a supply passage 54 , and a gas supply pipe 56 .

[0123] The gas supply source 51 supplies gas. The flow rate adjustment unit 52 is, for example, a mass flow controller, and adjusts the flow rate of the gas supplied by the gas supply source 51. The on-off valve 53 switches the supply of gas from the gas supply source 51 to the processing container 10 or stops the supply. The supply passage 54 connects the gas supply source 51 and the gas supply pipe 56, and the flow rate adjustment unit 52 and the on-off valve 53 are arranged in the middle. The gas supply pipe 56 is inserted into the processing container 10 from the flange portion 20 and is arranged in the gas supply chamber. The gas supply pipe 56 is formed with a plurality of release portions 56a in the height direction.

[0124] The gas exhaust unit 60B includes an exhaust pipe 25 provided on the side wall of the flange 20, a vacuum pump 61, a pressure regulator 62, and an exhaust passage 63. Thus, the gas in the processing container 10 is exhausted to the outside of the processing container 10 by the gas exhaust unit 60B. In addition, the pressure in the processing container 10 is controlled to a desired pressure by the pressure regulator 62.

[0125] In addition, the substrate processing apparatus 100B has a control unit 80. The control unit 80 controls the operation of each unit of the substrate processing apparatus 100B, for example. The control unit 80 may be, for example, a computer. In addition, the program of the computer that performs the operation of each unit of the substrate processing apparatus 100B is stored in a storage medium. The storage medium may be, for example, a floppy disk, an optical disk, a hard disk, a flash memory, a DVD, etc.

[0126] Here, the processing container 10 includes a processing container body 11 having a top and in a cylindrical shape, a pipe 16 , a flange portion 17 , and a temperature control pipe 320 .

[0127] The processing container body 11 is a cylindrical body with a top, into which the wafer boat 30 is inserted. One end of the side surface of the processing container body 11 serves as a gas supply chamber to which gas is supplied. The internal space of the gas supply chamber is a part of the internal space of the processing container body 11.

[0128] The pipe 16 branches from the processing container body 11 and extends in the horizontal direction (radial direction of the processing container body 11) at the side wall of the processing container body 11. The pipe 16 branches into a plurality of pipes in the height direction at the side wall of the processing container body 11. One end of the pipe 16 is connected to the processing container body 11, extends in the horizontal direction (radial direction of the processing container body 11) and penetrates the side of the heater 42, and the other end extends to a position closer to the outer peripheral side than the heater 42. A flange portion 17 is provided at the other end of the pipe 16. The connection portion of the supply passage 82 and the pipe 16 is airtightly connected via a sealing member 65 such as an O-ring made of fluorine-based rubber such as vinylidene fluoride rubber (FKM).

[0129] The processing container body 11 and the pipe 16 are provided with a temperature adjustment mechanism 300. Figure 7 and Figure 8 As shown, the temperature adjustment mechanism 300 has a temperature adjustment tube 320. The temperature adjustment tube 320 is connected to the cooling unit 81 via the supply passage 82. The temperature adjustment tube 320 is formed of quartz.

[0130] The temperature regulating tube 320 is an annular component for circulating the heat fluid. Alternatively, the temperature regulating tube 320 may be a rod-shaped component, and a circulation flow path is formed on the surface of the temperature regulating tube 320. The temperature regulating mechanism 300 allows the heat fluid, which has been temperature-regulated by the cooling unit 81, to circulate in the temperature regulating tube 320 via the supply passage 82. Figure 8 As shown, the temperature regulating tube 320 is arranged in a state where two tubes are in contact with the piping 16 inside the piping 16, and extends in the height direction from the piping 16 to the processing container body 11, with a T-shaped cross section near the substrate W in the processing container body 11.

[0131] In the temperature regulating tube 320, for example, N 2 Inert gas such as N2O2 gas circulates as a thermal fluid. The temperature regulating pipe 320 controls the supplied N2O2 to 2 The hot fluid such as gas circulates around the substrate W and returns to the cooling unit 81. 2 A thermal fluid such as gas circulates near the substrate W, and the edge portion of the substrate surface can be quickly heated or cooled according to the temperature of the thermal fluid.

[0132] According to the temperature control mechanism 300 of the second embodiment, in order to control the temperature of the edge and center of the substrate W surface, the temperature of the edge of the substrate W surface can be locally controlled by circulating the heated or cooled hot fluid in the temperature control tube 320.

[0133] In addition, by circulating the cooled hot fluid in the temperature regulating tube 320, the temperature of the processing container body 11 can be rapidly lowered. In particular, in low-temperature processing, the temperature regulating tube 320 has a high cooling effect on the inside of the processing container body 11. By flowing the hot fluid controlled to a predetermined temperature in the temperature regulating tube 320, the temperature in the substrate surface can be made uniform more quickly, or the temperature difference between the center and the edge of the substrate W can be made to be in a state suitable for film formation, which can be used as an adjustment knob for the uniformity in the surface of the substrate W.

[0134] [other]

[0135] The pipes 13 and 16 may be provided in plurality in the circumferential direction (horizontal direction) of the processing container body 11 and / or in the axial direction (vertical direction) of the processing container body 11. Figure 2 As shown in FIG. 1 , the plurality of pipes 13 and 16 may also be arranged radially toward the central axis C of the processing container body 11. Fig. 9As shown, the plurality of pipes 13 and 16 may be arranged parallel to each other instead of facing the central axis C of the processing container body 11. The pipes 13 and 16 may be arranged in only one layer.

[0136] It is also possible to combine two or more of the injectors 200A and the temperature adjustment mechanism 70 (see Figure 4 ), the injector 200A1 and the temperature control mechanism 70A of the modified example (refer to Figure 5 ), the temperature adjustment mechanism 300 of the second embodiment (refer to Figure 8 ) are combined and applied to substrate processing devices.

[0137] When the temperature adjustment mechanism 300 of the second embodiment is combined with at least any one of the injector 200A and the temperature adjustment mechanism 70 of the first embodiment and the injector 200A1 and the temperature adjustment mechanism 70A of the modified example, it is preferable to combine them in the circumferential direction of the processing container body 11 .

[0138] The substrate processing apparatus of the embodiments disclosed herein should be considered to be illustrative in all respects and not restrictive. The embodiments can be deformed and improved in various ways without departing from the scope of the invention and its gist. The matters described in the above-mentioned multiple embodiments can also adopt other structures within the scope of non-contradiction, and can be combined within the scope of non-contradiction.

Claims

1. A substrate processing device, characterized in that: include: a processing container body capable of accommodating a substrate holder for holding a substrate; a pipe branched from the processing container body and extending in a horizontal direction on a side wall of the processing container body; a temperature adjustment mechanism having a housing surrounding the pipe and capable of adjusting the temperature of the pipe; and An injector is arranged on the pipe.

2. The substrate processing device according to claim 1, characterized in that: The temperature adjustment mechanism is a heating mechanism and / or a cooling mechanism provided inside the housing.

3. The substrate processing device according to claim 2, characterized in that: The heating mechanism is a heater wound around the outer periphery of the pipe in the casing.

4. The substrate processing device according to claim 2, characterized in that: The cooling mechanism is a flow path formed in the housing and capable of flowing a thermal fluid.

5. The substrate processing device according to claim 1, wherein: The injector is detachably arranged on the pipe.

6. The substrate processing device according to claim 2, characterized in that: The injector comprises: a release portion having a plurality of gas release holes; and a flow portion, which is communicated with the release portion and is disposed in the pipe, The cross-sectional area of ​​the flow portion in the first portion where the heating mechanism is provided is larger than the cross-sectional area of ​​the other portions.

7. The substrate processing device according to claim 6, characterized in that: The first portion of the flow-through section has a plurality of thin tubes.

8. The substrate processing device according to claim 6, characterized in that: The heating mechanism is an induction coil that supplies high-frequency electric power. The first portion of the flow section defines a plasma generation space in which plasma is generated from a gas.

9. The substrate processing device according to claim 6, characterized in that: A throttle hole is provided at a gas inlet of the flow portion to the first portion.

10. A substrate processing device, characterized in that: include: a processing container body capable of accommodating a substrate holder for holding a substrate; a pipe branched from the processing container body and extending in a horizontal direction on a side wall of the processing container body; and A detachable temperature adjustment mechanism is disposed on the pipe.

11. The substrate processing device according to claim 1 or 10, characterized in that: include: a sealing member for airtightly connecting a supply passage for supplying gas to a connection portion of the pipe, The temperature adjustment mechanism is provided at least at a position closer to the processing container body than the sealing member.

12. The substrate processing device according to claim 1 or 10, characterized in that: A plurality of the pipes are provided in the axial direction of the processing container body.

13. The substrate processing device according to claim 1 or 10, characterized in that: A plurality of the pipes are provided in a circumferential direction of the processing container body.

14. The substrate processing device according to claim 1 or 10, characterized in that: The pipe is provided in a plurality in the circumferential direction and / or axial direction of the processing container body. The plurality of pipes are radially arranged toward the central axis of the processing container body.

15. The substrate processing device according to claim 1 or 10, characterized in that: A plurality of the pipes are provided in the circumferential direction and / or axial direction of the processing container body, and the plurality of pipes are arranged in parallel with each other.

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