Electronic package and fabrication method thereof

Abstract

The invention discloses an electronic package and a manufacturing method thereof, a first barrier and a second barrier are arranged in a layered manner, and an opening is arranged on a heat dissipation structure. Therefore, the gas in the heat dissipation structure can be exhausted through the open holes, so that the gas is prevented from remaining in the heat conduction layer to influence the heat dissipation effect.

Description

Technical Field

[0001] The invention relates to a packaging structure, and in particular to an electronic packaging component with a heat dissipation structure and a manufacturing method thereof. Background Art

[0002] As the demand for electronic products in terms of functions and processing speed increases, semiconductor chips, as the core components of electronic products, need to have higher density electronic components and electronic circuits, so semiconductor chips will generate more heat energy during operation. Furthermore, the traditional packaging colloid that covers the semiconductor chip is a poor heat transfer material with a thermal conductivity of only 0.8W / mk. If the heat generated by the semiconductor chip cannot be effectively dissipated, it will cause damage to the semiconductor chip and product reliability issues.

[0003] In order to quickly dissipate the heat energy generated by the semiconductor chip to the outside, the industry usually configures a heat sink or heat spreader in the semiconductor package. The heat sink is mainly bonded to the non-active surface of the semiconductor chip through a thermal interface material (TIM) layer, and the top sheet of the heat sink is exposed to the packaging colloid or directly to the atmosphere, so that the heat generated by the semiconductor chip is discharged through the thermal interface material (TIM) layer and the heat sink.

[0004] In the conventional method of manufacturing a semiconductor package 1, Figure 1A As shown, a semiconductor chip 11 is first placed on a package substrate 10 with its active surface 11a by flip chip bonding (i.e., through conductive bumps 111 and primer 112), and a barrier 15 and an adhesive layer 14 are placed on the package substrate 10, so that the barrier 15 surrounds the side of the semiconductor chip 11. Next, a thermal interface material (TIM) layer 12 is placed on the semiconductor chip 11, and the thermal interface material (TIM) layer 12 on the semiconductor chip 11 is surrounded by the barrier 15.

[0005] Subsequent, such as Figure 1B As shown, a heat sink 13 is bonded to the inactive surface 11b of the semiconductor chip 11 with its top sheet 131 through a thermal interface material (TIM) layer 12, and the support legs 132 of the heat sink 13 are arranged on the packaging substrate 10 through an adhesive layer 14. Next, a packaging molding operation is performed so that a packaging colloid (not shown) covers the semiconductor chip 11 and the heat sink 13, and the top sheet 131 of the heat sink 13 is exposed to the packaging colloid.

[0006] When the semiconductor package 1 is in operation, heat energy generated by the semiconductor chip 11 is conducted to the top plate 131 of the heat sink 13 through the inactive surface 11 b of the semiconductor chip 11 and the thermal interface material (TIM) layer 12 to be dissipated to the outside of the semiconductor package 1 .

[0007] However, in the known semiconductor package 1, the barrier 15 is mostly made of polymer materials, and the heat sink 13 often needs to be heated when the cover is sealed, which may cause the barrier 15 to generate gas that enters the thermal interface material (TIM) layer 12, thereby causing the thermal interface material (TIM) layer 12 to contain bubbles b. When the thermal interface material (TIM) layer 12 contains bubbles b, the contact area between the thermal interface material (TIM) layer 12 and the heat sink 13 is reduced, thereby affecting the heat dissipation effect.

[0008] Therefore, how to overcome the various problems of the above-mentioned prior art has become a difficult problem that needs to be overcome urgently in the current industry. Summary of the invention

[0009] In view of the various defects of the above-mentioned known technologies, the present invention provides an electronic package, which includes: a supporting structure; an electronic component, which is arranged on the supporting structure; a first barrier, which is arranged on the supporting structure and surrounds the side of the electronic component; a second barrier, which is arranged on the first barrier and formed with an opening for exposing the electronic component; a heat-conducting layer, which is arranged on the electronic component exposed by the opening of the second barrier to surround the heat-conducting layer through the second barrier; and a heat dissipation structure, which is arranged on the second barrier and the heat-conducting layer so that the heat-conducting layer is between the electronic component and the heat dissipation structure, and the heat dissipation structure has an opening connected to the opening.

[0010] The present invention also provides a method for manufacturing an electronic package, which includes: disposing an electronic component on a supporting structure; disposing a first barrier on the supporting structure, and the first barrier surrounds the side of the electronic component; disposing a second barrier on the first barrier, and forming an opening in the second barrier to expose the electronic component; disposing a heat dissipation structure with an opening on the second barrier, wherein the opening is connected to the opening of the second barrier; and disposing a heat-conducting layer on the electronic component exposed by the opening of the second barrier through the opening, so as to surround the heat-conducting layer through the second barrier.

[0011] In the aforementioned electronic package and the method for manufacturing the same, the first barrier is heated and cured before the second barrier is provided.

[0012] In the aforementioned electronic package and the method for manufacturing the same, when the second barrier is in an uncured state, the heat dissipation structure is disposed on the second barrier.

[0013] In the aforementioned electronic package and the manufacturing method thereof, a layer is provided between the first barrier and the second barrier.

[0014] In the aforementioned electronic package and the manufacturing method thereof, the first barrier is higher than the electronic component and surrounds the heat-conducting layer on the electronic component together with the second barrier.

[0015] In the aforementioned electronic package and the manufacturing method thereof, the first barrier and the second barrier are made of the same material.

[0016] In the aforementioned electronic packaging component and its manufacturing method, a covering layer is provided on the opening.

[0017] In the aforementioned electronic packaging component and its manufacturing method, the heat conducting layer is a liquid heat conducting material.

[0018] From the above, it can be seen that in the electronic package and its manufacturing method of the present invention, the first barrier and the second barrier are mainly arranged in layers, and openings are provided on the heat dissipation structure, so that the gas in the heat dissipation structure can be discharged through the openings to avoid gas remaining in the thermal conductive layer and affecting the heat dissipation effect. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] Figure 1A and Figure 1B The figure is a cross-sectional view of a conventional method for manufacturing a heat dissipation type semiconductor package.

[0020] FIG. 2A to FIG. 2D It is a cross-sectional schematic diagram of the method for manufacturing the electronic package of the present invention.

[0021] Figure 2C-1 for Figure 2C A partial top view of the diagram.

[0022] Main component symbols

[0023] 1 Semiconductor Package

[0024] 10 Package substrate

[0025] 11. Semiconductor Chip

[0026] 11a Action surface

[0027] 11b Non-active surface

[0028] 111 Conductive bump

[0029] 112 Primer

[0030] 12 Thermal Interface Material (TIM) Layer

[0031] 13 Heat sink

[0032] 131 Top sheet

[0033] 132 Support feet

[0034] 14 Adhesive layer

[0035] 15 Barrier

[0036] 2 Electronic packaging

[0037] 20 Load-bearing structure

[0038] 20a First side

[0039] 20b Second side

[0040] 21 Electronic components

[0041] 21a Action surface

[0042] 21b Non-active surface

[0043] 21c Side

[0044] 211 Conductive bump

[0045] 212 Primer

[0046] 22. First barrier

[0047] 23 Second barrier

[0048] 231 Opening

[0049] 24 Thermal Conductive Layer

[0050] 25 Heat dissipation structure

[0051] 251 Heat sink

[0052] 252 Support

[0053] 253 Opening

[0054] 26 Adhesive layer

[0055] 27 Overlay

[0056] A: Crystal placement area

[0057] B Outer area

[0058] b Bubbles

[0059] L Layered. DETAILED DESCRIPTION

[0060] The following describes the implementation of the present invention through specific embodiments. Those skilled in the art can easily understand other advantages and effects of the present invention from the contents described in this specification.

[0061] It should be noted that the structures, proportions, sizes, etc. illustrated in the drawings of this specification are only used to match the contents described in the specification for the technical personnel in the field to understand and read, and are not used to limit the limiting conditions for the implementation of the present invention, so they have no substantial technical significance. Any modification of the structure, change in the proportion relationship, or adjustment of the size, without affecting the effects and purposes that can be achieved by the present invention, should still fall within the scope of the technical content described in the present invention. At the same time, the terms such as "upper", "lower", "one", "first" and "second" quoted in this specification are only for the convenience of description, and are not used to limit the scope of the implementation of the present invention. The change or adjustment of their relative relationship should also be regarded as the scope of the implementation of the present invention without substantially changing the technical content.

[0062] FIG. 2A to FIG. 2D It is a cross-sectional schematic diagram of a method for manufacturing an electronic package 2 of the present invention.

[0063] like Figure 2A As shown, a supporting structure 20 having a first side 20a (such as an upper side) and a second side 20b (such as a lower side) opposite to each other is provided, and at least one (or more) electronic components 21 are disposed on the first side 20a of the supporting structure 20. The term "at least one" used in the present invention means more than one (such as one, two or more than three), and "more than one" means more than two (such as two, three, five or more than ten).

[0064] In one embodiment, the supporting structure 20 may be a package substrate having a core layer and a circuit portion or a coreless circuit structure. The first side 20a of the supporting structure 20 may be used as a die placement side for carrying the electronic component 21, and the second side 20b of the supporting structure 20 may be used as a ball planting side for sequentially placing solder balls (such as solder balls) and electronic devices (such as circuit boards).

[0065] It should be understood that the supporting structure 20 may also be other supporting units for supporting the electronic components 21 (such as chips), such as a lead frame or other plates with metal routing, but is not limited thereto.

[0066] In one embodiment, the electronic component 21 may be an active component, a passive component or a combination thereof. For example, the active component is a semiconductor chip.

[0067] In one embodiment, the electronic component 21 may be a semiconductor chip having a relative active surface 21a and an inactive surface 21b, and the active surface 21a of the electronic component 21 may have a plurality of electrode pads (not shown), so that the plurality of electrode pads are combined and electrically connected to the circuit layer of the supporting structure 20 in a flip chip manner through a plurality of conductive bumps 211 such as solder materials, and then a coating layer such as a primer 212 is filled and formed between the first side 20a of the supporting structure 20 and the active surface 21a of the electronic component 21 to cover the plurality of conductive bumps 211.

[0068] In other embodiments, the electronic component 21 may directly contact the circuit layer of the supporting structure 20 .

[0069] It should be understood that there are many ways to electrically connect the electronic components 21 to the supporting structure 20 , and the required type and quantity of electronic components 21 can be placed on the supporting structure 20 , but it is not limited thereto.

[0070] In one embodiment, the first side 20 a of the carrier structure 20 may be defined with a die-placement region A and a peripheral region B, so that the electronic component 21 is disposed on the die-placement region A of the first side 20 a of the carrier structure 20 .

[0071] Another example Figure 2A As shown, the first barrier 22 is formed around the electronic component 21 to surround the side 21c of the electronic component 21, and the first barrier 22 can also be further formed around the base glue 212 to surround the side of the base glue 212. In this embodiment, the first barrier 22 can be made of an insulating material (such as an insulating colloid). Figure 2A At the stage shown, the first barrier 22 is heated to cure it.

[0072] like Figure 2B As shown, a second barrier 23 is formed on the cured first barrier 22 and has an opening 231 exposing the electronic component 21. An adhesive layer 26 can also be formed on the supporting structure 20. At this stage, the second barrier 23 is not cured but in a semi-molten state.

[0073] When the second barrier 23 is not yet solidified but in a semi-molten state, a heat dissipation structure 25 is disposed on the first side 20a of the supporting structure 20. The heat dissipation structure 25 can be made of a heat dissipation material (such as a metal material), and the heat dissipation structure 25 includes a heat dissipation member 251 having an opening 253 and at least one (such as a plurality of) supporting members 252.

[0074] In this embodiment, the heat sink 251 of the heat dissipation structure 25 can be combined with the semi-molten second barrier 23. For example, the second barrier 23 is first formed on the first barrier 22 by dispensing, and the heat sink 251 of the heat dissipation structure 25 is bonded to the second barrier 23 before the second barrier 23 is cured. In addition, the opening 253 on the heat sink 251 is set in the area corresponding to the electronic component 21, and is connected to the opening 231 of the second barrier 23.

[0075] In this embodiment, the support member 252 of the heat dissipation structure 25 may extend downward from the edge of the heat dissipation member 251, and may be bonded to the supporting structure 20 via the adhesive layer 26. For example, the adhesive layer 26 is formed on the peripheral area B of the first side 20a of the supporting structure 20 by dispensing, and then the support member 252 of the heat dissipation structure 25 is bonded to the adhesive layer 26, so that the heat dissipation structure 25 is fixed to the supporting structure 20.

[0076] At Figure 2B In the stage shown, after the heat dissipation structure 25 is set, the second barrier 23 and the adhesive layer 26 are heated and cured. Even if the second barrier 23 generates gas during heating, the gas can be discharged to the outside through the openings 253 of the heat dissipation structure 25.

[0077] In this embodiment, the second barrier 23 may be made of an insulating material (such as an insulating colloid), and the first barrier 22 and the second barrier 23 may be made of the same material, but there is a layer L between the first barrier 22 and the second barrier 23, and the layer L is caused by the different curing times of the first barrier 22 and the second barrier 23. Specifically, before the second barrier 23 is formed, the first barrier 22 has been cured first, so even if the second barrier 23 is subsequently formed with the same material, there will be a layer L between the first barrier 22 and the second barrier 23. By curing the first barrier 22 before covering the heat dissipation structure 25, the gas generated by the first barrier 22 when heated can be directly dissipated, and after covering the heat dissipation structure 25, the gas generated by the second barrier 23 near the opening 253 when heated can be easily discharged to the outside of the heat dissipation structure 25 through the opening 253. In addition, the present invention is not limited to the above, and in other embodiments, the first barrier 22 and the second barrier 23 may also be made of different materials.

[0078] like Figure 2C As shown, the material for forming the heat-conducting layer 24 is injected between the heat-dissipating structure 25 and the electronic component 21 through the opening 253 of the heat-dissipating structure 25 .

[0079] In this embodiment, the thermal conductive layer 24 may be a thermal interface material (TIM) layer composed of a liquid thermal conductive material. For example, the thermal conductive layer 24 may be a liquid thermal conductive material such as tin, gallium, indium, etc. or a combination thereof and have a high thermal conductivity (such as 86W / mK).

[0080] Furthermore, in this embodiment, the first barrier 22 may be formed to be slightly higher than the electronic component 21, so that the first barrier 22 and the second barrier 23 jointly surround the heat-conducting layer 24 on the electronic component 21, so that the first barrier 22 and the second barrier 23 jointly prevent the heat-conducting layer 24 from overflowing to the side 21c of the electronic component 21 and the supporting structure 20 to cause adverse effects (such as electrical short circuit). However, the present invention is not limited to the above, and the first barrier 22 may be made to be the same height as the electronic component 21, or the first barrier 22 may be made lower than the electronic component 21, and only the second barrier 23 blocks or surrounds the heat-conducting layer 24 on the electronic component 21, so that the second barrier 23 prevents the heat-conducting layer 24 from overflowing to the side 21c of the electronic component 21 and the supporting structure 20 to cause adverse effects (such as electrical short circuit).

[0081] Also, see Figure 2C-1 , which is Figure 2C A partial top view schematic diagram. The second barrier 23 is arranged in the shape of the first barrier 22 surrounding the electronic component 21, and can be formed into a shape approximately ring-shaped, O-shaped, or square-shaped. In addition, the heat-conducting layer 24 is arranged on the electronic component 21 (such as the non-active surface 21b) exposed by the opening 231 of the second barrier 23, and is surrounded by the second barrier 23. Through this design, the heat-conducting layer 24 will not overflow outside the opening 231 of the second barrier 23. In other words, the heat-conducting layer 24 can be confined to the crystal placement area A (i.e., the area above the electronic component 21). In addition, the adhesive layer 26 can be circumferentially arranged on the supporting structure 20, so that the support member 252 of the heat dissipation structure 25 can be well bonded to the supporting structure 20 through the adhesive layer 26.

[0082] like Figure 2D As shown, a cover layer 27 is formed above the opening 253 of the heat dissipation structure 25 to prevent the heat conductive layer 24 from overflowing.

[0083] In this embodiment, the covering layer 27 is formed by a metal layer, but the present invention is not limited thereto, and other methods or other materials may be used to form the covering layer 27. Furthermore, slightly more heat-conducting layer 24 material may be injected so that the heat-conducting layer 24 fills the space between the heat dissipation structure 25 and the electronic component 21 and fills a portion of the opening 253. However, the present invention is not limited to the above, and the heat-conducting layer 24 may not fill a portion of the opening 253, and only the covering layer 27 may seal the opening 253, or the heat-conducting layer 24 may fill the opening 253, and the covering layer 27 may cover the heat-conducting layer 24 and the heat dissipation element 251.

[0084] Then, a plurality of metal pillars such as copper pillars, metal bumps coated with insulating blocks, solder balls, solder balls with core copper balls (Cu core balls) or other conductive structures and other conductive elements (not shown) can be set on the second side 20b of the supporting structure 20 to obtain the electronic package 2 of the present invention, and then an electronic device such as a circuit board (not shown) can be connected through the plurality of conductive elements.

[0085] The present invention further provides an electronic package 2, which includes: a supporting structure 20; an electronic component 21, which is arranged on the supporting structure 20; a first barrier body 22, which is arranged on the supporting structure 20 and surrounds the side 21c of the electronic component 21; a second barrier body 23, which is arranged on the first barrier body 22 and is formed with an opening 231 exposing the electronic component 21; a heat-conducting layer 24, which is arranged on the electronic component 21 exposed by the opening 231 of the second barrier body 23, so as to surround the heat-conducting layer 24 on the electronic component 21 through the second barrier body 23; and a heat dissipation structure 25, which is arranged on the second barrier body 23 and the heat-conducting layer 24 so that the heat-conducting layer 24 is between the electronic component 21 and the heat dissipation structure 25, and the heat dissipation structure 25 is provided with an opening 253 in the area corresponding to the electronic component 21.

[0086] In one embodiment, a layer L is provided between the first barrier 22 and the second barrier 23 .

[0087] In one embodiment, the first barrier 22 is higher than the electronic component 21 , and together with the second barrier 23 surrounds the heat conducting layer 24 on the electronic component 21 .

[0088] In one embodiment, the first barrier 22 and the second barrier 23 are made of the same material.

[0089] In one embodiment, a covering layer 27 is disposed on the opening 253 .

[0090] In one embodiment, the opening 253 is filled with the heat conductive layer 24 and the cover layer 27 .

[0091] In one embodiment, the heat conductive layer 24 is limited to the area above the electronic component 21 .

[0092] In one embodiment, the heat conducting layer 24 is a liquid heat conducting material.

[0093] In summary, in the electronic package and the manufacturing method thereof of the present invention, openings are provided on the heat dissipation structure so that the gas in the heat dissipation structure can be discharged through the openings to prevent the gas from remaining in the heat conductive layer and affecting the heat dissipation effect.

[0094] Furthermore, since the present invention arranges the first barrier and the second barrier in layers in two steps, and cures the first barrier before covering the heat dissipation structure, when heating is performed after covering the heat dissipation structure, the gas generated by the second barrier located near the opening can be easily discharged from the opening of the heat dissipation structure without accumulating in the heat dissipation structure.

[0095] The above embodiments are used to illustrate the principles and effects of the present invention, but are not used to limit the present invention. Any person skilled in the art may modify the above embodiments without violating the spirit and scope of the present invention. Therefore, the scope of protection of the present invention shall be as set forth in the attached claims.

Claims

1. An electronic package, comprising: a load-bearing structure; an electronic component, which is arranged on the supporting structure; a first barrier disposed on the supporting structure and surrounding the side surface of the electronic component; a second barrier, which is disposed on the first barrier and has an opening for exposing the electronic component; a heat-conducting layer disposed on the electronic component exposed by the opening of the second barrier body, so as to surround the heat-conducting layer through the second barrier body; and A heat dissipation structure is arranged on the second barrier and the heat-conducting layer so that the heat-conducting layer is interposed between the electronic component and the heat dissipation structure, and the heat dissipation structure has an opening connected to the opening.

2. The electronic package according to claim 1, wherein: There is a layer between the first barrier and the second barrier.

3. The electronic package according to claim 1, wherein: The first barrier is higher than the electronic component, and together with the second barrier surrounds the heat conducting layer on the electronic component.

4. The electronic package according to claim 1, wherein: The first barrier and the second barrier are made of the same material.

5. The electronic package according to claim 1, wherein: A covering layer is provided on the opening.

6. The electronic package according to claim 1, wherein: The heat conducting layer is a liquid heat conducting material.

7. A method for manufacturing an electronic package, comprising: Disposing an electronic component on a supporting structure; Disposing a first barrier on the supporting structure, wherein the first barrier surrounds the side surface of the electronic component; Disposing a second barrier on the first barrier, and forming an opening on the second barrier to expose the electronic component; Disposing a heat dissipation structure having an opening on the second barrier, wherein the opening is connected to the opening of the second barrier; as well as A heat-conducting layer is disposed on the electronic component exposed by the opening of the second barrier through the opening, so that the heat-conducting layer is surrounded by the second barrier.

8. The method for manufacturing an electronic package according to claim 7, wherein: Before providing the second barrier, the first barrier is heated and cured.

9. The method for manufacturing an electronic package according to claim 7, wherein: When the second barrier is in an uncured state, the heat dissipation structure is disposed on the second barrier.

10. The method for manufacturing an electronic package according to claim 7, wherein: There is a layer between the first barrier and the second barrier.

11. The method for manufacturing an electronic package according to claim 7, wherein: The first barrier is higher than the electronic component, and together with the second barrier surrounds the heat conducting layer on the electronic component.

12. The method for manufacturing an electronic package according to claim 7, wherein: The first barrier and the second barrier are made of the same material. 13 . The method for manufacturing an electronic package according to claim 7 , further comprising disposing a covering layer on the opening.

14. The method for manufacturing an electronic package according to claim 7, wherein: The heat conducting layer is a liquid heat conducting material.

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