Integrated heat dissipation structure and heat dissipation method applied to PoP package stack bottom
By adopting an integrated heat dissipation structure composed of an adhesive plate, the first diffusion plate and the heat dissipation column in the PoP packaging structure, the problem of difficulty in dissipating heat from the high-power chip at the bottom in the stacked PoP packaging is solved, and the effect of low thermal resistance and high heat dissipation is achieved, and the reliability of the packaging is improved.
Patent Information
- Application Number
- CN202411843775.5
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-12-14
- Publication Date
- 2025-03-28
AI Technical Summary
The heat dissipation of the high-power chip at the bottom in the stacked PoP package structure is difficult to dissipate heat effectively, and the thermal resistance is accumulated, affecting the chip life and module reliability.
An integrated heat dissipation structure is adopted, including an adhesive plate, a first diffusion plate and a heat dissipation column. The adhesive plate is installed on the upper surface of the components of the bottommost substrate of the PoP package. The first diffusion plate extends along the side of the adhesive plate to the packaging edge. The heat dissipation column extends upwardly to the top cover plate at the end of the first diffusion plate to form horizontal and vertical heat dissipation channels.
Through this structure, heat is evenly distributed in the horizontal direction and is quickly transmitted to the top radiator through the vertical heat dissipation channel, which significantly reduces the thermal resistance of the underlying high-power chip and improves the heat dissipation effect and reliability of the PoP package.
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Figure CN119725258A_ABST
Abstract
Description
Technical Field
[0001] The present invention belongs to the technical field of heat dissipation of hybrid integrated circuits, and in particular relates to an integrated heat dissipation structure and a heat dissipation method applied to the bottom of a PoP package stack. Background Art
[0002] As the demand for three-dimensional PoP packaging products for multi-functional integration, high-performance computing and miniaturized design becomes increasingly strong, PoP packaging products represented by stacked memory have become increasingly widely used in recent years.
[0003] Since stacked PoP packaging is stacked in three dimensions without changing the package volume, its packaging efficiency is at least 2 times higher than other packaging methods. However, PoP packaging is stacked in three dimensions, and the heat dissipation path of the bottom chip is relatively long, and is blocked by the upper package body, so it is difficult to effectively dissipate the heat, and the resulting device heat accumulation problem is more prominent; especially for multi-chip stacking structures, the heat accumulation of the bottom chip is the most serious. From the perspective of module heat dissipation management, high-power chips are usually placed on the top to shorten the heat dissipation path and reduce the overall thermal resistance. However, the main power-consuming chips of information processing microsystem products are devices with the largest number of I / Os (such as processors or FPGAs). In order to ensure the requirements of high-speed and high-performance electrical signals, they are generally required to be placed at the bottom layer. This structural form will cause the thermal resistance of the bottom chip in the upward heat dissipation channel to accumulate layer by layer, which will bring more serious heat dissipation problems, greatly reduce the life of the chip in the package, and affect the reliability of the entire module product.
[0004] Therefore, it is particularly important to solve the heat dissipation problem of the bottom high-power devices caused by the stacked PoP packaging structure from the aspects of applying high thermal conductivity packaging materials and integrated efficient heat dissipation structure, so as to achieve low thermal resistance and high heat dissipation of PoP packaging as the design goal and improve the heat dissipation reliability of PoP packaging products. Summary of the invention
[0005] The purpose of the present invention is to provide an integrated heat dissipation structure and heat dissipation method applied to the bottom of a PoP package stack, so as to solve the problem of heat dissipation difficulty of high-power chips at the bottom of a PoP package stack and improve the heat dissipation effect of the PoP package.
[0006] In order to achieve the above object, the present invention adopts the following technical solutions: In a first aspect, an integrated heat dissipation structure applied to the bottom of a PoP package stack includes: an adhesive plate, a first diffusion plate, and a heat dissipation column; The adhesive plate is installed on the upper surface of the components of the bottom substrate of the PoP package, the first diffusion plate is installed on the side of the adhesive plate and extends outward to the edge of the PoP package, and the heat dissipation column is installed at the end of the first diffusion plate and extends to the top cover of the PoP package.
[0007] In some embodiments, the adhesive plate and the upper surface of the components of the bottom substrate have the same area and shape.
[0008] In some embodiments, a plurality of the adhesive plates are mounted on the upper surfaces of different components, and a second diffusion plate is installed between adjacent adhesive plates to connect them; When the adjacent bonding plates are at the same height, the second diffusion plate is a straight plate; When there is a height difference between adjacent bonding plates, the second diffusion plate is a stepped plate.
[0009] In some embodiments, the first diffusion plates are respectively disposed at four vertices of the bonding plate and radially extend outward to an edge of the PoP package.
[0010] In some embodiments, the bonding plate, the first diffusion plate, and the heat dissipation column are all made of aluminum-based silicon carbide.
[0011] In some embodiments, the heat dissipation column is vertically mounted on an end of the first diffusion plate and connected to the top cover plate as a whole.
[0012] In some embodiments, the top cover is attached to the upper chip of the PoP package.
[0013] In some embodiments, the bonding plate is mounted on the upper surface of the components of the bottom substrate of the PoP package by means of a thermally conductive adhesive.
[0014] In a second aspect, a heat dissipation method applied to the bottom of a PoP package stack is based on the integrated heat dissipation structure, comprising the following steps: After the bonding plate is mounted on the upper surface of the components of the bottom substrate of the PoP package through a thermally conductive adhesive, the first diffusion plate extends along the plane where the bonding plate is located to the four vertices of the edge of the PoP package to form a horizontal heat dissipation channel; Extending the heat dissipation column upward from the end of the first diffusion plate to the top cover plate of the PoP package to form a vertical heat dissipation channel; The heat dissipation column is connected to the top cover plate, and the heat is conducted and diffused through the radiator above the cover plate; The heat of the components of the bottom substrate is transferred to the preset radiator position through the horizontal heat dissipation channel and the vertical heat dissipation channel in turn for heat dissipation, and the heat of the upper chip is transferred to the preset radiator position for heat dissipation through the upper heat dissipation channel.
[0015] In some embodiments, it is characterized in that the thermal conductivity of the integrated heat dissipation structure is greater than or equal to 140 W / m·K.
[0016] Compared with the prior art, the present invention has the following beneficial effects: The present invention provides an integrated heat dissipation structure applied to the bottom of a PoP package stack, wherein an adhesive plate is mounted on the upper surface of the components of the bottom substrate of the PoP package, the first diffusion plate is mounted on the side of the adhesive plate and extends outward to the edge of the PoP package, and the heat dissipation column is mounted on the end of the first diffusion plate and extends to the top cover of the PoP package. This structure is targeted at the chip layout of a typical PoP stacked package structure, can solve the heat dissipation problem of the key high-power consumption chip at the bottom of the stacked package structure, and achieve low thermal resistance and high heat dissipation inside the PoP package.
[0017] The first diffusion plate of the present invention extends along the plane where the adhesive plate is located to the edge of the PoP package, forming a horizontal heat dissipation channel, which is conducive to the uniform distribution and conduction of heat in the horizontal direction; the heat dissipation column extends upward at the end of the first diffusion plate to the top cover plate of the PoP package, which can form a vertical heat dissipation channel, ensuring that the heat can be quickly conducted to the top radiator.
[0018] The present invention can provide multiple bottom adhesive plates, which are respectively bonded on top according to the number of bottom chips, and second diffusion plates are installed between adjacent adhesive plates for connection. When there is a height difference between adjacent adhesive plates, the second diffusion plates between the height difference of the adhesive plates can be adjusted to be step plates according to actual heat dissipation requirements, thereby improving the flexibility of the heat dissipation structure. In addition, the first diffusion plates are respectively arranged at the vertices of the adhesive plates and extend radially outward to the edge of the PoP package, which helps to maximize the heat dissipation area and improve the heat dissipation efficiency.
[0019] The heat dissipation structure provided by the present invention is made of aluminum-based silicon carbide, which has the advantages of high thermal conductivity, high strength and corrosion resistance, and can ensure the stability and reliability of the heat dissipation structure.
[0020] The top cover plate of the present invention is not only connected to the heat dissipation column as one body, but also fits the heat sink on the top of the PoP package to form an upward heat dissipation path. If the upper chip can be directly fitted with the upper cover plate under the condition of process reliability, this structure can solve the heat dissipation problem of the bottom and upper chips at the same time, thereby improving the heat dissipation performance of the entire PoP package stack. BRIEF DESCRIPTION OF THE DRAWINGS
[0021] Figure 1 A schematic diagram of an integrated heat dissipation structure provided in Embodiment 1 of the present invention; Figure 2 A schematic diagram of the internal position of the integrated heat dissipation structure provided in the first embodiment of the present invention in a PoP packaging module; Figure 3 A schematic diagram of an integrated heat dissipation structure applied to the upper surfaces of multiple components of the same height provided in the second embodiment of the present invention; Figure 4 This is a schematic diagram of an integrated heat dissipation structure with two straight plates provided in Embodiment 2 of the present invention; Figure 5 A schematic diagram of an integrated heat dissipation structure applied to the upper surfaces of components at multiple different heights provided in the second embodiment of the present invention; Figure 6 The present invention is a schematic diagram of an integrated heat dissipation structure with two stepped plates provided in Embodiment 2.
[0022] In the figure, 1, bonding plate; 2, first diffusion plate; 3, heat dissipation column; 4, second diffusion plate. DETAILED DESCRIPTION
[0023] The exemplary embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. Although the exemplary embodiments of the present disclosure are shown in the accompanying drawings, it should be understood that the present disclosure can be implemented in various forms and should not be limited by the specific embodiments set forth herein. On the contrary, these embodiments are provided in order to enable a more thorough understanding of the present disclosure and to fully convey the scope of the present disclosure to those skilled in the art.
[0024] In the following description, a large number of details are given to provide a more thorough understanding of the present disclosure. However, it is obvious to those skilled in the art that the present disclosure can be implemented without one or more of these details. In other examples, in order to avoid confusion with the present disclosure, some technical features known in the art are not described; that is, all features of actual embodiments are not described here, and well-known functions and structures are not described in detail.
[0025] It should be understood that when an element or layer is referred to as "on ...", "adjacent to ...", "connected to" or "coupled to" other elements or layers, it can be directly on, adjacent to, connected to or coupled to other elements or layers, or there can be intervening elements or layers. On the contrary, when an element is referred to as "directly on ...", "directly adjacent to ...", "directly connected to" or "directly coupled to" other elements or layers, there is no intervening element or layer. It should be understood that although the terms first, second, third, etc. can be used to describe various elements, components, regions, layers and / or parts, these elements, components, regions, layers and / or parts should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or part from another element, component, region, layer or part. Therefore, without departing from the teachings of the present disclosure, the first element, component, region, layer or part discussed below can be represented as the second element, component, region, layer or part. And when the second element, component, region, layer or part is discussed, it does not indicate that the present disclosure necessarily has the first element, component, region, layer or part.
[0026] The purpose of the terms used herein is only to describe specific embodiments and is not intended to be a limitation of the present disclosure. When used herein, the singular forms "one", "an" and "said / the" are also intended to include plural forms, unless the context clearly indicates otherwise. It should also be understood that the terms "consisting of" and / or "comprising", when used in this specification, determine the presence of the features, integers, steps, operations, elements and / or parts, but do not exclude the presence or addition of one or more other features, integers, steps, operations, elements, parts and / or groups. When used herein, the term "and / or" includes any and all combinations of the relevant listed items.
[0027] PoP (Package on Package), also known as stacked packaging, is a technology that packages two or more chips together to form an overall structure. This technology usually involves placing a chip (such as a logic chip) on the bottom layer and another chip (such as a memory chip) on top of it, interconnecting them through welding or other connection technologies. This stacked structure can significantly save space and improve the performance of the device.
[0028] Embodiment 1 Since the PoP package is stacked in three dimensions, the heat dissipation path of the bottom chip is relatively long and is blocked by the upper package, making it difficult for the heat to diffuse effectively. In addition, as the power consumption of the chip continues to increase, the heat load of the bottom chip continues to rise, further exacerbating the heat dissipation problem. For multi-chip stacking structures, the heat accumulation problem of the bottom chip is particularly serious. Due to the layer-by-layer accumulation of thermal resistance, the thermal resistance of the bottom chip in the upward heat dissipation channel continues to increase, resulting in the inability to diffuse and conduct heat in time, causing the problem of rising chip temperature, which in turn affects the chip performance and life. Especially in information processing microsystem products, the main power-consuming chips such as processors or FPGAs are usually placed at the bottom layer because they need to meet the requirements of high-speed and high-performance electrical signals. This structural form further exacerbates the heat dissipation problem of the bottom chip, which seriously threatens the reliability of the entire module product.
[0029] In order to solve the heat dissipation problem of the bottom high-power device in the stacked PoP packaging structure, such as Figure 1 As shown, this embodiment provides an integrated heat dissipation structure applied to the bottom of a PoP package stack, including an adhesive plate 1, a first diffusion plate 2 and a heat dissipation column 3; The integrated heat dissipation structure is radial in all directions. Four first diffusion plates 2 are provided, which are respectively provided at the end positions of the adhesive plate 1. The first diffusion plate 2 extends along the plane where the adhesive plate 1 is located to the four vertices of the edge of the PoP packaging module and then connects to the heat dissipation column 3. The heat dissipation column 3 extends upward to the top surface of the PoP packaging module. During the packaging process, the adhesive plate 1 is mounted on the upper surface of the components (such as high-power chips) of the bottom substrate with a thermally conductive adhesive. As shown in the blue part in the figure, the size of the blue mounting part is adapted to the size of the high-power chip, specifically, the adhesive plate 1 and the upper surface of the components of the bottom substrate have the same area and shape. When the device heats up, the heat is first diffused horizontally from the first diffusion plate 2 to the edge of the module through the heat dissipation structure, and then conducted upward to the top of the module by the heat dissipation column 3, so that it is completely dissipated through the radiator on the top of the PoP package.
[0030] like Figure 2 As shown, the integrated heat dissipation structure provided in this embodiment is embedded in the PoP packaging module during assembly. After the adhesive plate 1 is installed on the upper surface of the components of the bottom substrate of the PoP package through the thermal conductive adhesive, the first diffusion plate 2 extends along the plane where the adhesive plate 1 is located to the four vertices of the edge of the PoP package to form a horizontal heat dissipation channel; the heat dissipation column 3 extends upward from the end of the first diffusion plate 2 to the top cover plate of the PoP package to form a vertical heat dissipation channel; the heat dissipation column 3 and the top cover plate are connected. If the top cover plate can be attached to the upper chip of the PoP package, the top cover plate is the upper heat dissipation channel, which can further increase the heat dissipation effect; the heat of the components of the bottom substrate is sequentially conducted to the preset heat sink position through the horizontal heat dissipation channel and the vertical heat dissipation channel for heat dissipation, and at the same time, the heat of the upper chip is conducted to the preset heat sink position through the upper heat dissipation channel for heat dissipation, so as to reduce the thermal resistance of the high-power chip at the bottom of the stacked PoP package and solve the thermal resistance control problem of multiple internal embedded heat sources.
[0031] The heat dissipation structure uses materials with high thermal conductivity and low thermal expansion coefficient, which can ensure high thermal conductivity and take into account the thermal matching problem between different materials inside the PoP package. The preferred material is aluminum-based silicon carbide, which has a thermal conductivity of ≥140 W / m·K and a thermal expansion coefficient of ≤8ppm. Its thermal conductivity is much higher than that of traditional metal materials, and it can effectively conduct the heat generated by the chip and improve the reliability and stability of components. Its thermal expansion coefficient is adjustable and well matched with semiconductor chips and ceramic substrates, which can prevent fatigue failure caused by thermal stress. In addition, aluminum-based silicon carbide has low density, high hardness, high bending strength, strong plasticity, and good seismic resistance, and can maintain stable performance in harsh environments.
[0032] This embodiment is analyzed in combination with thermal simulation modeling technology. After increasing the area and thickness of the first diffusion plate 2 and thickening the heat dissipation column 3, the heat dissipation capacity of the PoP packaging module can be significantly improved. Therefore, this embodiment is not limited to the size, and the size can be adaptively changed in combination with the specific module structure. The heat dissipation effect is more obvious after the thermal conductivity of the integrated heat dissipation structure is controlled at 140 W / m·K or above.
[0033] In the integrated heat dissipation structure provided in this embodiment, the first diffusion plate extends along the plane where the adhesive plate is located to the edge of the PoP package, forming a horizontal heat dissipation channel, which is conducive to the diffusion and conduction of heat in the horizontal direction; the heat dissipation column extends from the end of the first diffusion plate to the top cover plate of the PoP package, which can form a vertical heat dissipation channel to ensure that the heat can be quickly conducted to the top heat sink. Through the above-mentioned three-dimensional thermal channel low thermal resistance design, when the high-power chip is working, the adhesive plate 1 and the first diffusion plate 2 of the high thermal conductivity material conduct the chip heat to the surrounding of the PoP package module, and then conduct it to the top of the PoP package and connect it to the cover plate as a whole. The cover plate is also attached to the upper chip to provide a heat dissipation channel for the upper chip. This structure can greatly reduce the junction thermal resistance value of the high-power chip on the bottom substrate, and at the same time realize the rapid conduction of chip energy in the stacked structure. Through thermal simulation analysis, the integrated heat dissipation structure can reduce the thermal resistance of the PoP package module by 65%, and its package junction-to-case thermal resistance is ≤3°C / W. Therefore, the integrated heat dissipation structure can be widely used in the efficient heat dissipation design of substrate interconnected PoP package products, and can also be used in the heat dissipation design of microsystem products with similar three-dimensional stacking structures.
[0034] Embodiment 2 This embodiment provides an integrated heat dissipation structure applied to the bottom of a PoP package stack, comprising: an adhesive plate 1, a first diffusion plate 2, a heat dissipation column 3, and a second diffusion plate 4. These structures form an efficient three-dimensional heat dissipation network to ensure that the heat inside the PoP package can be quickly and evenly transferred to the external environment.
[0035] The adhesive plate 1, as the bottom layer of the heat dissipation structure, is closely attached to the upper surface of the components of the bottom substrate of the PoP package. Its shape and area are consistent with the upper surface of the components to ensure the maximum thermal contact area, thereby improving the heat conduction efficiency. The adhesive plate 1 is fixed by a thermally conductive adhesive, which not only has excellent thermal conductivity, but also ensures long-term reliability and stability.
[0036] Adhesive plates 1 are installed on the upper surfaces of different components of the bottom substrate of the PoP package, and adjacent adhesive plates 1 are connected by a second diffusion plate 4. Figure 5 As shown, if there is a height difference between adjacent adhesive plates 1, the second diffuser plate 4 between them is a stepped plate to ensure that the connection between the second diffuser plate 4 and the adhesive plate 1 is flush; Figure 6 As shown, a plurality of step plates may be arranged before adjacent bonding plates, and two are arranged in this embodiment.
[0037] like Figure 3 As shown, if the heights of adjacent adhesive plates 1 are the same, the second diffusion plate 4 between them can be a straight plate; Figure 4 As shown, a plurality of straight plates can be arranged before adjacent bonding plates, and two are arranged in this embodiment.
[0038] The first diffusion plate 2 is installed on the side of the adhesive plate 1 located at the outermost side of the bottom layer of the PoP package, and extends outward to the edge of the PoP package. In this embodiment, four first diffusion plates 2 are provided, extending along the outermost adhesive plate 1 to the edge of the PoP package, and a certain gap is maintained between adjacent first diffusion plates 2 to promote the lateral diffusion and flow of heat. This design not only increases the heat dissipation area, but also effectively avoids local accumulation of heat and improves the heat dissipation efficiency. The first diffusion plate 2 also uses aluminum-based silicon carbide material with excellent thermal conductivity to ensure rapid heat conduction.
[0039] The heat dissipation column 3 is vertically mounted at the end of the first diffusion plate 2 and extends upward to the top cover of the PoP package. These heat dissipation columns not only provide a vertical conduction path for heat, but also achieve effective conduction and dispersion of heat through the reasonable design of their height and number.
[0040] In this embodiment, the bonding plate 1, the first diffusion plate 2, the heat dissipation column 3 and the second diffusion plate 4 are all made of aluminum-based silicon carbide (AlSiC) composite materials. This material combines the high thermal conductivity of silicon carbide with the light weight and easy processing of aluminum, and has excellent comprehensive performance. It can not only withstand the high temperature and high pressure generated during the operation of PoP packaging, but also effectively reduce the weight and cost of the heat dissipation structure.
[0041] This embodiment also provides a heat dissipation method applied to the bottom of a PoP package stack, comprising the following steps: First, the adhesive plate 1 is tightly attached to the upper surface of the components of the bottom substrate of the PoP package through a thermally conductive adhesive, and the heat is conducted between adjacent adhesive plates 1 through the second diffusion plate 4, and extends outward along the plane of the outermost adhesive plate 1 along the first diffusion plate 2 to the edge of the PoP package, forming a horizontal heat dissipation channel. These channels provide a path for lateral diffusion of heat, effectively avoiding the accumulation of heat in local areas.
[0042] At the end of the first diffusion plate 2, heat dissipation columns 3 are vertically installed and extend upward to the top cover of the PoP package. These heat dissipation columns not only provide a vertical conduction path for heat, but also ensure uniform distribution and rapid conduction of heat through the reasonable design of their height and number.
[0043] During the PoP package operation, the heat generated by the components of the bottom substrate is first diffused laterally through the horizontal heat dissipation channel formed by the adhesive plate 1 and the first diffusion plate 2. Then, the heat is transferred upward to the top cover through the vertical heat dissipation channel formed by the heat dissipation column 3. Finally, the heat generated by the upper chip is also transferred to the heat dissipation column 3 through the upper heat dissipation channel. All this heat is finally discharged through the external heat sink, ensuring the stability and controllability of the internal temperature of the PoP package; the heat can also be discharged through the external heat sink set on the top cover.
[0044] The difference between this embodiment and the first embodiment is that the number of chips placed on the bottom substrate is different. In the second embodiment, multiple chips can be placed on the bottom substrate, so there will be multiple adhesive plates 1, and a second diffusion plate 4 is added between adjacent adhesive plates 1 to achieve heat conduction and diffusion between different chips on the bottom plate. When the heights of the chips placed on the bottom plate are different, the second diffusion plate 4 can connect the multiple chips in different forms (such as the straight plate or stepped plate mentioned above), and conduct the heat of the chips to the heat dissipation column 3 through the adhesive plate 1 and the first diffusion plate 2.
[0045] This embodiment is analyzed in combination with thermal simulation modeling technology. After increasing the area and thickness of the first diffuser plate 2 and the second diffuser plate 4, and thickening the heat dissipation column 3, the heat dissipation capacity of the PoP packaging module can be significantly improved. Therefore, this embodiment is not limited to the size, and the size can be adaptively changed in combination with the specific module structure.
[0046] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention rather than to limit it. Although the present invention has been described in detail with reference to the above embodiments, ordinary technicians in the relevant field should understand that the specific implementation methods of the present invention can still be modified or replaced by equivalents. Any modification or equivalent replacement that does not depart from the spirit and scope of the present invention should be covered within the scope of protection of the claims of the present invention.
Claims
1. An integrated heat dissipation structure applied to the bottom of a PoP package stack, characterized in that: include: Adhesive plate, first diffusion plate and heat dissipation column; The adhesive plate is installed on the upper surface of the components of the bottom substrate of the PoP package, the first diffusion plate is installed on the side of the adhesive plate and extends outward to the edge of the PoP package, and the heat dissipation column is installed at the end of the first diffusion plate and extends to the top cover of the PoP package.
2. The integrated heat dissipation structure applied to the bottom of a PoP package stack according to claim 1, characterized in that: The adhesive plate has the same area and shape as the upper surface of the components of the bottom substrate.
3. The integrated heat dissipation structure applied to the bottom of a PoP package stack according to claim 1, characterized in that: A plurality of the first diffusion plates are provided, which are respectively arranged on the side surfaces of the adhesive plate, and there are gaps between adjacent first diffusion plates.
4. The integrated heat dissipation structure applied to the bottom of a PoP package stack according to claim 1, characterized in that: The first diffusion plates are respectively arranged at four vertices of the bonding plate and radially extend outward to the edge of the PoP package.
5. The integrated heat dissipation structure applied to the bottom of a PoP package stack according to claim 1, characterized in that: The bonding plate, the first diffusion plate and the heat dissipation column are all made of aluminum-based silicon carbide.
6. The integrated heat dissipation structure applied to the bottom of a PoP package stack according to claim 1, characterized in that: The heat dissipation column is vertically mounted on the end of the first diffusion plate and is connected to the top cover plate as a whole.
7. The integrated heat dissipation structure applied to the bottom of a PoP package stack according to claim 1, characterized in that: A plurality of the adhesive plates are mounted on the upper surfaces of different components, and a second diffusion plate (4) is mounted between adjacent adhesive plates for connection; When the heights of adjacent bonding plates are flush, the second diffusion plate (4) is a straight plate; When there is a height difference between adjacent bonding plates, the second diffusion plate (4) is a stepped plate.
8. The integrated heat dissipation structure applied to the bottom of a PoP package stack according to claim 1, characterized in that: The bonding plate is mounted on the upper surface of the components of the bottom substrate of the PoP package by means of a thermally conductive adhesive.
9. A heat dissipation method applied to the bottom of a PoP package stack, characterized in that: The integrated heat dissipation structure according to any one of claims 1 to 8 comprises the following steps: After the bonding plate is mounted on the upper surface of the components of the bottom substrate of the PoP package through a thermally conductive adhesive, the first diffusion plate extends along the plane where the bonding plate is located to the four vertices of the edge of the PoP package to form a horizontal heat dissipation channel; Extending the heat dissipation column upward from the end of the first diffusion plate to the top cover plate of the PoP package to form a vertical heat dissipation channel; The heat dissipation column and the top cover are connected, and the top cover is attached to the upper chip of the PoP package, and the top cover forms an upper heat dissipation channel; The heat of the components of the bottom substrate is transferred to the preset radiator position through the horizontal heat dissipation channel and the vertical heat dissipation channel in turn for heat dissipation, and the heat of the upper chip is transferred to the preset radiator position for heat dissipation through the upper heat dissipation channel.
10. A heat dissipation method applied to the bottom of a PoP package stack according to claim 9, characterized in that: The thermal conductivity of the integrated heat dissipation structure is greater than or equal to 140 W / m·K.
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